A chiral structure processing apparatus based on single position exposure

Abstract

The present disclosure relates to a chiral structure processing device based on single position exposure, comprising: a control module, a light source module and a focusing module; the control module is used for determining target laser parameters according to the shape corresponding to a target chiral structure; the light source module is used for emitting target circularly polarized laser according to the target laser parameters; and the focusing module is used for controlling the target circularly polarized laser to focus on the surface of a target object for single position exposure, so as to obtain the target chiral structure. Through the chiral structure processing device of the present disclosure, the target circularly polarized laser can be focused on the surface of the target object, the heat brought by the laser focusing and the spin angular momentum of the target circularly polarized laser are utilized to generate a flower-shaped structure with rotational symmetry and chirality, the processing of the target chiral structure is quickly completed based on the light-heat-fluid coupling effect through single position exposure, and the precision of the target chiral structure obtained by processing can be improved.

Description

Technical Field

[0001] This disclosure relates to the field of laser processing technology, and in particular to a chiral structure processing apparatus based on single-position exposure. Background Technology

[0002] Chirality refers to the asymmetric property of an object or shape's structure itself, which cannot be superimposed on its mirror image. Since uncontrolled laser beams typically lack chirality, current methods for processing chiral structures using femtosecond lasers usually require either first decomposing the chiral structure into a point cloud and then processing it using a point-by-point scanning approach, or performing complex modulation of the laser field and processing it through layer exposure or volume exposure. These methods all require multiple exposures at multiple locations, resulting in lengthy processing times for chiral structures. Summary of the Invention

[0003] In view of this, this disclosure proposes a technical solution for a chiral structure processing apparatus based on single-position exposure.

[0004] According to one aspect of this disclosure, a chiral structure processing apparatus based on single-position exposure is provided, comprising: a control module, a light source module, and a focusing module; the control module is used to determine target laser parameters according to the shape corresponding to the target chiral structure; the light source module is used to emit target circularly polarized laser according to the target laser parameters; and the focusing module is used to control the target circularly polarized laser to be focused on the surface of the target object for single-position exposure to obtain the target chiral structure.

[0005] In one possible implementation, the target laser parameters include target exposure time and target rotation direction; the light source module includes a laser and a polarization state adjustment submodule; the laser is used to emit linearly polarized laser according to the target exposure time; the polarization state adjustment submodule is used to adjust the polarization state of the linearly polarized laser according to the target rotation direction to obtain the target circularly polarized laser.

[0006] In one possible implementation, the target laser parameters further include a target laser power; the device further includes a power adjustment module; and the control module is used to control the power adjustment module to adjust the laser power of the linearly polarized laser until the real-time laser power corresponding to the target circularly polarized laser is adjusted to the target laser power.

[0007] In one possible implementation, the power adjustment module includes an attenuator.

[0008] In one possible implementation, the polarization state adjustment submodule includes a quarter-wave plate; the angle between the optical axis direction corresponding to the quarter-wave plate and the polarization direction of the linearly polarized laser satisfies a preset angle.

[0009] In one possible implementation, the device further includes a multi-degree-of-freedom displacement platform, on which the target object is disposed; the multi-degree-of-freedom displacement platform is used to determine real-time pose data corresponding to the target object, wherein the real-time pose data is used to reflect the position and attitude of the target object.

[0010] In one possible implementation, the device further includes a spot imaging module; the spot imaging module is used to determine a spot image corresponding to the target circularly polarized laser; the control module is used to control the target circularly polarized laser to focus on the target position on the surface of the target object according to the spot image and the real-time pose data.

[0011] In one possible implementation, the spot imaging module includes an illumination source, a laser reflector, and an image sensor.

[0012] In one possible implementation, the control module is further configured to control the movement of the multi-degree-of-freedom displacement platform based on the real-time pose data, and process multiple chiral structures of an array structure on the surface of the target object.

[0013] In one possible implementation, the focusing module includes a focusing objective lens.

[0014] The chiral structure processing apparatus according to an embodiment of this disclosure includes a control module, a light source module, and a focusing module. The control module is used to determine target laser parameters based on the shape corresponding to the target chiral structure. The light source module is used to emit a target circularly polarized laser based on the target laser parameters. The focusing module is used to control the target circularly polarized laser to be focused on the surface of the target object for single-position exposure, thereby utilizing the heat generated by laser focusing and the spin angular momentum of the target circularly polarized laser to generate a flower-like structure with rotational symmetry and chirality. This achieves rapid processing of chiral structures based on the light-heat-fluid coupling effect, using only single-position exposure, and can improve the accuracy of the processed target chiral structure.

[0015] Other features and aspects of this disclosure will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0016] The accompanying drawings, which are included in and form part of this specification, illustrate exemplary embodiments, features, and aspects of this disclosure together with the specification and serve to explain the principles of this disclosure.

[0017] Figure 1 This diagram shows a block diagram of a chiral structure processing apparatus based on single-position exposure according to an embodiment of the present disclosure;

[0018] Figure 2 A schematic diagram of a target chiral structure according to an embodiment of the present disclosure is shown;

[0019] Figure 3 A schematic diagram illustrating the mapping relationship between the shape of a chiral structure and laser parameters according to an embodiment of the present disclosure;

[0020] Figure 4 A schematic diagram of a chiral structure processing apparatus based on single-position exposure according to an embodiment of the present disclosure is shown.

[0021] Figure 5 A schematic diagram of a plurality of chiral structures of an array structure according to an embodiment of the present disclosure is shown;

[0022] Figure 6 A schematic diagram of an array structure according to an embodiment of the present disclosure is shown. Detailed Implementation

[0023] Various exemplary embodiments, features, and aspects of this disclosure will now be described in detail with reference to the accompanying drawings. The same reference numerals in the drawings denote elements that have the same or similar functions. Although various aspects of the embodiments are shown in the drawings, they are not necessarily drawn to scale unless specifically indicated otherwise.

[0024] The term “exemplary” as used herein means “serving as an example, embodiment, or illustration.” Any embodiment illustrated herein as “exemplary” is not necessarily to be construed as superior to or better than other embodiments.

[0025] In this document, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent three cases: A exists alone, A and B exist simultaneously, and B exists alone. Furthermore, the term "at least one" in this document means any combination of at least two of any one or more elements. For example, including at least one of A, B, and C can mean including any one or more elements selected from the set consisting of A, B, and C.

[0026] Furthermore, to better illustrate this disclosure, numerous specific details are set forth in the following detailed description. Those skilled in the art will understand that this disclosure can be practiced without certain specific details. In some instances, methods, means, components, and circuits well known to those skilled in the art have not been described in detail in order to highlight the main points of this disclosure.

[0027] Chirality can refer to the asymmetric property of an object or shape's structure itself, which cannot be superimposed on its mirror image; chiral structures and / or chiral substances have broad application prospects in fields such as medicine, information, biology, and chemistry.

[0028] Femtosecond laser high-precision direct writing technology is a commonly used laser processing technique with multiple characteristics such as multiphoton absorption, threshold effect, and "cold processing." It is widely used in processing polymers such as photoresists, as well as hard materials such as quartz glass and sapphire. Micron- and / or nanometer-scale chiral structures based on femtosecond laser processing are crucial in optical sensing, manipulation, and research on the interaction between chiral structures and electromagnetic waves.

[0029] However, since laser beams without complex control usually do not possess chirality, existing methods for processing chiral structures using femtosecond lasers typically require first decomposing the chiral structure into a point cloud and then performing multiple exposures at multiple locations based on point-by-point scanning. This processing method consumes a long processing time and is limited by the size of each point in the point cloud, resulting in a large lower limit to the size of the processed chiral structure.

[0030] Another commonly used femtosecond laser processing method in existing technologies requires complex modulation of the laser light field, and processing is carried out through layer exposure or volume exposure. This method also requires multiple exposures at multiple locations. In addition, in practical applications, problems such as light field defects and zero-order light can occur during the complex light field modulation process, thus affecting the processing accuracy of chiral structures.

[0031] In view of this, this disclosure provides a chiral structure processing apparatus based on single-position exposure. This apparatus can focus a circularly polarized laser onto the surface of a target object, utilizing the heat generated by the laser focusing and the spin angular momentum of the circularly polarized laser to generate a flower-like structure with rotational symmetry and chirality. This achieves rapid chiral structure processing based on the optical-thermal-fluid coupling effect, using only a single-position exposure, and can improve the accuracy of the processed target chiral structure. The chiral structure processing apparatus based on single-position exposure according to embodiments of this disclosure will be described in detail below.

[0032] Figure 1 A block diagram of a chiral structure processing apparatus based on single-position exposure according to an embodiment of the present disclosure is shown. Figure 1 As shown, the device 100 includes: a control module 101, a light source module 102, and a focusing module 103.

[0033] The control module 101 is used to determine the target laser parameters based on the shape corresponding to the target chiral structure.

[0034] The specific details of the shape corresponding to the target chiral structure can be flexibly set according to actual usage requirements. For example, it may include the rotation direction and size parameters of the target chiral structure. This disclosure does not impose specific limitations on this.

[0035] Figure 2 A schematic diagram of a target chiral structure according to an embodiment of the present disclosure is shown. Figure 2 As shown, the target chiral structure is a flower-like structure with an outer ring diameter of 1.15 micrometers (µm) and an inner ring diameter of 628 nanometers (nm). It exhibits rotational symmetry and chirality.

[0036] The control module 101 can determine the target laser parameters based on the mapping relationship between the shape corresponding to the chiral structure and the laser parameters, according to the shape corresponding to the target chiral structure. The specific form of the control module 101 can refer to embodiments in related technologies. For example, it can be executed by electronic devices such as terminal devices or servers. The terminal device can be a user equipment (UE), mobile device, user terminal, terminal, cellular phone, cordless phone, personal digital assistant (PDA), handheld device, computing device, vehicle-mounted device, wearable device, etc., and this disclosure does not specifically limit it in this regard.

[0037] The specific parameters of the target laser can be flexibly set according to actual usage requirements. For example, they may include the beam size, laser power, rotation direction, and exposure time of the circularly polarized laser. This disclosure does not impose specific limitations on these parameters.

[0038] The specific details of the mapping relationship between the shape of the chiral structure and the laser parameters can be flexibly set according to actual usage requirements, depending on the specific content of the target laser parameters. This disclosure does not impose any specific limitations on this.

[0039] Figure 3 A schematic diagram illustrating the mapping relationship between the shape of a chiral structure and laser parameters according to an embodiment of the present disclosure is shown. Figure 3 As shown, the target laser parameters include laser power and exposure time, where laser power is described in the form of single-pulse energy, and exposure time is described in the form of pulse number. (The text then repeats itself, so the translation stops.) Figure 3 The schematic diagram of the mapping relationship shown can be used to determine the target laser parameters based on the shape of the target chiral structure.

[0040] The specific method for determining the mapping relationship between the shape of the chiral structure and the laser parameters can be flexibly set according to actual application requirements, and this disclosure does not impose specific limitations on it.

[0041] In one possible implementation, the sample object can be exposed at a single location based on multiple preset laser parameters. The chiral structure of the sample corresponding to each preset laser parameter can then be determined using a scanning electron microscope. Based on the chiral structure corresponding to each preset laser parameter, statistical analysis is performed to determine the generation condition intervals for different chiral structures, thereby obtaining the mapping relationship between the shape of the chiral structure and the laser parameters.

[0042] The light source module 102 is used to emit circularly polarized laser light from the target laser according to the target laser parameters.

[0043] The light source module 102 can emit a corresponding circularly polarized laser according to the target laser parameters for processing the target chiral structure. The specific form of the light source module 102 can be flexibly configured according to actual usage requirements, and this disclosure does not impose specific limitations on it.

[0044] In one possible implementation, the target laser parameters include the target exposure time and the target rotation direction; the light source module 102 includes a laser and a polarization state adjustment submodule; the laser is used to emit linearly polarized laser according to the target exposure time; the polarization state adjustment submodule is used to adjust the polarization state of the linearly polarized laser according to the target rotation direction to obtain the target circularly polarized laser.

[0045] The target laser parameters may include the target exposure time and the target rotation direction. Specifically, the target exposure time represents the duration for which the circularly polarized laser exposes the surface of the target object. If the target exposure time is too short, the chiral structure may not be properly processed, resulting in defects in its shape. If the target exposure time is too long, the chiral structure may become distorted. Therefore, the target laser parameters need to be set within a reasonable exposure time range. The specific value of the exposure time range can be flexibly set according to actual usage requirements and depends on the actual situation of the target object used to process the chiral structure; this disclosure does not impose specific limitations on this.

[0046] In one example, when the target object is a phase change material in the form of a thin film, the exposure time range can be set to 25 to 250 milliseconds (ms), which is equivalent to 5,000 to 50,000 pulses corresponding to the target circularly polarized laser.

[0047] The target rotation direction can represent the rotation direction of the light vector corresponding to the circularly polarized laser along the laser propagation direction, including counterclockwise and clockwise rotation. By changing the rotation direction of the circularly polarized laser, the spin angular momentum of the circularly polarized laser can be changed, thereby adjusting the rotation direction of the chiral structure of the processed target.

[0048] Figure 4 A schematic diagram of a chiral structure processing apparatus based on single-position exposure according to an embodiment of the present disclosure is shown. Figure 4 As shown, the light source module includes a laser 401 and a polarization state adjustment submodule 402.

[0049] The laser 401 can control the opening time of its shutter according to the target exposure time to emit X-ray polarized laser. The specific form of the laser 401 can be found in related technologies, such as femtosecond laser generators, and this disclosure does not specifically limit it.

[0050] The polarization state adjustment submodule 402 can adjust the polarization state of linearly polarized laser according to the target rotation direction to obtain circularly polarized laser. The specific form of the polarization state adjustment submodule 402 can be found in related technical embodiments, and this disclosure does not impose specific limitations on it.

[0051] In one possible implementation, the polarization state adjustment submodule includes a quarter-wave plate; the angle between the optical axis direction corresponding to the quarter-wave plate and the polarization direction of the linearly polarized laser satisfies a preset angle.

[0052] The specific value of the preset angle can be flexibly set according to actual usage requirements, depending on the rotation direction corresponding to the target circularly polarized laser. For example, the angle between the optical axis direction corresponding to the quarter-wave plate and the polarization direction corresponding to the linearly polarized laser can be set to satisfy 45° or 135°. This disclosure does not make specific limitations on this.

[0053] In practical applications, due to unavoidable factors such as the processing error of the quarter-wave plate and the installation error of optical components, the angle between the optical axis direction corresponding to the quarter-wave plate and the polarization direction corresponding to the linearly polarized laser is difficult to precisely meet the preset angle. Therefore, the laser parameters corresponding to the target circularly polarized laser can also include the ellipticity of the target circularly polarized laser, and the ellipticity of the target circularly polarized laser can be set to meet a preset ellipticity range, thereby ensuring the accuracy of the target chiral structure processed based on the target circularly polarized laser. The specific value of the ellipticity range can be flexibly set according to actual usage requirements, for example, it can be set to greater than 0.85 and less than or equal to 1, etc., and this disclosure does not make a specific limitation on it.

[0054] In addition to the aforementioned optical devices, other optical devices may be added to the light source module 102 as needed, and this disclosure does not impose any specific restrictions on this.

[0055] Based on the above Figure 4 For example, Figure 4As shown, the light source module may also include a beam expander 403, which is used to enlarge the diameter of the linearly polarized laser, reduce the divergence angle of the linearly polarized laser, and thus improve the beam quality of the linearly polarized laser.

[0056] The focusing module 103 is used to control the target circularly polarized laser to focus on the surface of the target object for single-position exposure to obtain the target chiral structure.

[0057] The focusing module 103 can focus the circularly polarized laser onto a target location on the surface of a target object. Through the optical-thermal-fluid coupling effect, it achieves single-location exposure of the target object's surface, thereby processing a target chiral structure. Specifically, when the focusing module 103 focuses the circularly polarized laser onto the target object's surface, the heat generated by focusing can change the physical state of a portion of the target object's surface, forming a partial fluid. The circularly polarized light carrying electromagnetic angular momentum can cause this part of the fluid to form a flower-like structure with rotational symmetry and chirality. Furthermore, since the chiral structure can be processed through a single-location exposure, the apparatus 100 provided in this embodiment of the present disclosure, compared to existing processing methods that require multiple exposures at multiple locations, can achieve nanoscale chiral structure processing with higher processing accuracy.

[0058] The specific form of the target material can be flexibly set according to actual usage requirements, and this disclosure does not impose specific limitations on it. Preferably, the target material is a phase change material in the form of a thin film.

[0059] The specific form of the focusing module 103 can be flexibly set according to actual usage needs, and this disclosure does not impose specific limitations on it.

[0060] In one possible implementation, the focusing module 103 includes a focusing objective lens.

[0061] Based on the above Figure 4 For example, Figure 4 As shown, the focusing module may include a focusing objective lens 404. By adjusting the position of the focusing objective lens 404, the target circularly polarized laser can be controlled to be focused on the surface of the target object, and the structural complexity of the device 100 can be reduced.

[0062] In addition to the aforementioned optical devices, other optical devices may be added to the focusing module 103 as needed, and this disclosure does not impose any specific restrictions on this.

[0063] The chiral structure processing apparatus according to an embodiment of this disclosure includes a control module, a light source module, and a focusing module. The control module is used to determine target laser parameters based on the shape corresponding to the target chiral structure. The light source module is used to emit a target circularly polarized laser based on the target laser parameters. The focusing module is used to control the target circularly polarized laser to be focused on the surface of the target object for single-position exposure, thereby utilizing the heat generated by laser focusing and the spin angular momentum of the target circularly polarized laser to generate a flower-like structure with rotational symmetry and chirality. This achieves rapid processing of chiral structures based on the light-heat-fluid coupling effect, using only single-position exposure, and can improve the accuracy of the processed target chiral structure.

[0064] In one possible implementation, the target laser parameters also include the target laser power; the device 100 also includes a power adjustment module; and a control module 101 is used to control the power adjustment module to adjust the laser power of the linearly polarized laser until the real-time laser power corresponding to the target circularly polarized laser is adjusted to the target laser power.

[0065] Based on the above Figure 3 For example, Figure 3 As shown, different chiral structures can be obtained by adjusting the laser power corresponding to the target circularly polarized laser. Furthermore, if the laser power corresponding to the target circularly polarized laser is too low, the heat generated by laser focusing may be insufficient to change the surface state of the target object, thus preventing the processing of the target chiral structure; conversely, if the laser power corresponding to the target circularly polarized laser is too high, the heat generated by laser focusing may be excessive, causing problems such as distortion and deformation of the target chiral structure. Therefore, the target laser parameters may also include the target laser power, and the target laser power needs to be set within a reasonable power range. The specific content of the target laser power can be flexibly set according to actual usage requirements; for example, it may include the single-pulse energy corresponding to the target circularly polarized laser, etc., which is not specifically limited in this disclosure. The specific value of the power range can also be flexibly set according to actual usage requirements, depending on the actual situation of the target object, which is not specifically limited in this disclosure.

[0066] In one example, the target is a phase change material in the form of a thin film, and the laser repetition rate corresponding to the target circularly polarized laser is 200 kHz. Then, the single pulse energy range corresponding to the target circularly polarized laser can be set to 300 to 500 picojoules (pJ).

[0067] To ensure that the laser power corresponding to the target circularly polarized laser meets the target laser power, the device 100 may also include a power adjustment module.

[0068] Based on the above Figure 1 For example, Figure 1As shown, the device 100 may also include a power adjustment module 104.

[0069] The control module 101 can detect the real-time laser power corresponding to the target circularly polarized laser through a power meter that can be set between the light source module 102 and the focusing module 103. Based on the real-time laser power, the control module 101 controls the power adjustment module 104 to adjust the laser power corresponding to the linearly polarized laser so that the real-time laser power corresponding to the target circularly polarized laser meets the target laser power. The specific form of the power adjustment module 104 can be flexibly set according to actual usage requirements, and this disclosure does not impose specific limitations on it.

[0070] In one possible implementation, the power adjustment module includes an attenuator.

[0071] Based on the above Figure 4 For example, Figure 4 As shown, the power adjustment module includes an attenuator 405. The attenuator 405 is disposed between the laser 401 and the focusing objective lens 404, and can be used to adjust the laser power corresponding to the linearly polarized laser incident on the focusing objective lens 404. The specific form of the attenuator 405 can be found in related art embodiments, and this disclosure does not impose specific limitations on it.

[0072] The attenuator 405 enables high-precision power adjustment of linearly polarized lasers within a wide power adjustment range, meeting the needs of various application scenarios. Furthermore, the attenuator 405 features a fast response speed, allowing for rapid adjustment of the laser power corresponding to the linearly polarized laser. This reduces the time consumed in laser power adjustment during the processing of target chiral structures, improving the accuracy and efficiency of chiral structure processing.

[0073] In one possible implementation, the device 100 further includes a multi-degree-of-freedom displacement platform on which the target object is placed; the multi-degree-of-freedom displacement platform is used to determine the real-time pose data corresponding to the target object, wherein the real-time pose data is used to reflect the position and attitude of the target object.

[0074] Based on the above Figure 4 For example, Figure 4 As shown, the device 100 also includes a multi-degree-of-freedom displacement platform 406, on which the target object is disposed. The specific form of the multi-degree-of-freedom displacement platform 406 can be found in related technical embodiments; for example, it can be a three-axis displacement platform or a six-degree-of-freedom displacement platform, etc., and this disclosure does not impose any specific limitations on it.

[0075] The multi-degree-of-freedom displacement platform 406 enables real-time monitoring of the position and orientation of a target object, determining its corresponding real-time pose data. The specific content of the real-time pose data can be flexibly set according to actual usage requirements; for example, it may include the target object's position relative to the focusing module and its angle relative to the horizontal plane, etc. This disclosure does not impose specific limitations on this.

[0076] In one possible implementation, the device 100 further includes a spot imaging module; the spot imaging module is used to determine the spot image corresponding to the target circularly polarized laser; and the control module 101 is used to control the target circularly polarized laser to focus on the target position on the surface of the target object according to the spot image and real-time pose data.

[0077] To ensure the accuracy and reliability of the processing of the target chiral structure, the apparatus 100 provided in this disclosure may further include a spot imaging module for calibrating the relative position of the target circularly polarized laser and the target object before processing the target chiral structure, and for adjusting the position of the target circularly polarized laser focused on the surface of the target object in real time during the processing of the target chiral structure.

[0078] Specifically, the spot imaging module can acquire a spot image corresponding to the target circularly polarized laser and transmit the spot image to the control module 101. The control module 101 can determine the position of the target circularly polarized laser on the surface of the target object based on the spot image, and, in conjunction with the real-time pose data corresponding to the target object, adjust the position of the optical devices in the device 100 and / or the position and attitude of the multi-degree-of-freedom displacement platform in real time, so that the target circularly polarized laser can be focused onto the target position on the surface of the target object.

[0079] The specific form of the light spot imaging module can be flexibly set according to actual usage requirements, and this disclosure does not impose specific limitations on it.

[0080] In one possible implementation, the spot imaging module includes an illumination source, a laser reflector, and an image sensor.

[0081] Based on the above Figure 4 For example, Figure 4 As shown, the light spot imaging module includes an illumination source, a laser reflector 407, and an image sensor 408. The illumination source can be positioned above the fixing device of the laser reflector 407 to provide illumination light to the target object, facilitating observation and imaging of the light spot corresponding to the circularly polarized laser on the target. The specific form of the illumination source can be flexibly set according to actual usage requirements; for example, it can be set as an LED light source, etc., and this disclosure does not impose specific limitations on it.

[0082] The laser reflector 407 can be used to adjust the propagation direction of the target circularly polarized laser and transmit the illumination light emitted from the illumination source to the target object. The specific form of the laser reflector 407 can be found in related art embodiments, and this disclosure does not impose specific limitations thereon.

[0083] The image sensor 408 can receive the light reflected from the target object, obtain a spot image corresponding to the circularly polarized laser of the target, and transmit the spot image to the control module 101. The specific form of the image sensor 408 can be found in related technologies, such as charge-coupled device (CCD) image sensors, and this disclosure does not specifically limit it.

[0084] In one possible implementation, the control module 101 is also used to control the motion of the multi-degree-of-freedom displacement platform according to real-time pose data, and to process multiple chiral structures of the array structure on the surface of the target object.

[0085] When multiple chiral structures need to be processed, the control module 101 can control the movement of the multi-degree-of-freedom displacement platform according to the real-time pose data corresponding to the target object, and adjust the laser parameters corresponding to the circularly polarized laser of the target in real time, so as to realize the arraying and programming of chiral structure processing, and process multiple chiral structures in an array on the surface of the target object. The array structure can represent that the positional relationship between multiple chiral structures meets a preset shape; the specific form of the preset shape can be flexibly set according to actual usage requirements, such as rectangle, circle, etc., and this disclosure does not specifically limit it; the multiple chiral structures can be chiral structures with the same shape or chiral structures with different shapes, which can be flexibly set according to actual usage requirements, and this disclosure does not specifically limit it.

[0086] Based on the above Figure 4 For example, the linearly polarized laser emitted from laser 401 is amplified by beam expander 403 and then incident on attenuator 405. Attenuator 405, under the control of control module 101, can adjust the laser power corresponding to the linearly polarized laser in real time. The adjusted linearly polarized laser, under the action of laser reflector 407, changes its propagation direction and is incident on polarization state adjustment submodule 402. Polarization state adjustment submodule 402 can adjust the polarization state of the adjusted linearly polarized laser according to the target rotation direction to obtain target circularly polarized laser. After passing through focusing objective lens 404, the target circularly polarized laser is focused on the surface of the target object set on a multi-degree-of-freedom displacement platform.

[0087] Illumination light emitted from the illumination source shines through a laser reflector onto the surface of the target object and is reflected into the image sensor 408, thereby generating a spot image corresponding to the circularly polarized laser. After acquiring the spot image from the image sensor 408 and the real-time pose data from the multi-degree-of-freedom displacement platform 406, the control module 101 can adjust the positions of each optical component in the device 100, as well as the position and orientation of the multi-degree-of-freedom displacement platform 406, to accurately focus the circularly polarized laser onto the target position on the target object surface for single-position exposure. When the exposure time meets the target exposure time, the laser 401 can control its shutter to close, ending the processing and completing the processing of a single chiral structure to obtain the target chiral structure.

[0088] When multiple chiral structures of an array structure need to be processed, the control module 101 can further adjust the focusing position of the target circularly polarized laser on the surface of the target object based on the spot image and real-time pose data after one chiral structure is processed, thereby processing a new chiral structure until the entire array structure is processed, resulting in multiple chiral structures whose positional relationships satisfy the preset shape.

[0089] Figure 5 A schematic diagram of a plurality of chiral structures of an array structure according to an embodiment of the present disclosure is shown. For example... Figure 5 As shown, the array structure includes multiple identical chiral structures.

[0090] Furthermore, the chiral structure processing apparatus 100 provided in this disclosure can also process non-chiral structures by adjusting the light source module 102 in real time, thereby increasing the applicability of the apparatus 100 and providing application flexibility of the apparatus 100.

[0091] Figure 6 A schematic diagram of an array structure according to an embodiment of the present disclosure is shown. Figure 6 As shown, in addition to the chiral structure, the array structure also includes other structures with axial symmetry and centrosymmetry.

[0092] The chiral structure processing apparatus according to an embodiment of this disclosure includes a control module, a light source module, and a focusing module. The control module is used to determine target laser parameters based on the shape corresponding to the target chiral structure. The light source module is used to emit a target circularly polarized laser based on the target laser parameters. The focusing module is used to control the target circularly polarized laser to focus on the surface of the target object for single-position exposure, thereby utilizing the heat generated by laser focusing and the spin angular momentum of the target circularly polarized laser to generate a flower-like structure with rotational symmetry and chirality. This achieves rapid chiral structure processing based on the light-heat-fluid coupling effect, using only single-position exposure, and can improve the accuracy of the processed target chiral structure. Furthermore, the chiral structure processing apparatus of this disclosure may also include a multi-degree-of-freedom displacement platform. By utilizing the control module to control the real-time motion of the multi-degree-of-freedom displacement platform and to adjust the laser parameters corresponding to the target circularly polarized laser in real time, array-based and programmable processing of chiral structures can be achieved, rapidly obtaining multiple chiral structures in an array structure.

[0093] It should be noted that, although... Figure 1 and Figure 4 The chiral structure processing apparatus based on single-position exposure has been described above as an example of an embodiment of this disclosure, but those skilled in the art will understand that this disclosure is not limited thereto. In fact, users can flexibly set the specific structure of the chiral structure processing apparatus based on single-position exposure according to their personal preferences and / or actual application scenarios, and adaptively add, remove or replace the optical components therein, as long as the chiral structure processing can be completed by exposure at only a single position based on the above process.

[0094] The various embodiments of this disclosure have been described above. These descriptions are exemplary and not exhaustive, nor are they limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen to best explain the principles, practical application, or technical improvements to the embodiments in the market, or to enable others skilled in the art to understand the embodiments disclosed herein.

Claims

1. A chiral structure processing apparatus based on single-position exposure, characterized in that, include: Control module, light source module, and focusing module; The control module is used to determine the target laser parameters based on the shape corresponding to the target chiral structure. The light source module is used to emit circularly polarized laser light from the target laser according to the target laser parameters; The focusing module is used to control the target circularly polarized laser to focus on the surface of the target object for single-position exposure, thereby obtaining the target chiral structure.

2. The apparatus according to claim 1, characterized in that, The target laser parameters include the target exposure time and the target rotation direction; The light source module includes: a laser and a polarization state adjustment submodule; The laser is used to emit X-ray polarized laser light according to the target exposure time; The polarization state adjustment submodule is used to adjust the polarization state of the linearly polarized laser according to the target rotation direction to obtain the target circularly polarized laser.

3. The apparatus according to claim 2, characterized in that, The target laser parameters also include the target laser power; The device also includes a power adjustment module; The control module is used to control the power adjustment module to adjust the laser power of the linearly polarized laser until the real-time laser power corresponding to the target circularly polarized laser is adjusted to the target laser power.

4. The apparatus according to claim 3, characterized in that, The power adjustment module includes an attenuator.

5. The apparatus according to any one of claims 2 to 4, characterized in that, The polarization state adjustment submodule includes a quarter-wave plate; The angle between the optical axis direction corresponding to the quarter-wave plate and the polarization direction of the linearly polarized laser satisfies a preset angle.

6. The apparatus according to any one of claims 1 to 4, characterized in that, The device also includes a multi-degree-of-freedom displacement platform, on which the target object is disposed; The multi-degree-of-freedom displacement platform is used to determine the real-time pose data corresponding to the target object, wherein the real-time pose data is used to reflect the position and attitude of the target object.

7. The apparatus according to claim 6, characterized in that, The device also includes a spot imaging module; The spot imaging module is used to determine the spot image corresponding to the target circularly polarized laser; The control module is used to control the target circularly polarized laser to focus on the target position on the surface of the target object based on the spot image and the real-time pose data.

8. The apparatus according to claim 7, characterized in that, The light spot imaging module includes an illumination source, a laser reflector, and an image sensor.

9. The apparatus according to claim 6, characterized in that, The control module is also used to control the movement of the multi-degree-of-freedom displacement platform according to the real-time pose data, and to process multiple chiral structures of array structure on the surface of the target object.

10. The apparatus according to any one of claims 1 to 4, characterized in that, The focusing module includes a focusing objective lens.

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