An ion manipulation method, apparatus and application

Abstract

This disclosure belongs to the field of quantum computing technology and provides an ion manipulation method, device, and application. The method includes: dividing the ion trap electrode region into N sub-regions, with DC voltage electrodes of the same designation connected to a common power supply. A predetermined m-type sub-region is designated as a switch control area, connected to a switch module and the power supply; the remaining sub-regions are designated as direct control areas, directly connected to the power supply. The switch module outputs signals to control the electric field of the electrodes in the switch control areas, causing ions to move or remain stationary. The power supply controls the electric field of the electrodes in the direct control areas, controlling the movement or stationary position of ions, thereby realizing ion manipulation in an ion trap quantum computer. This method solves the problem in existing technologies that cannot both reduce the number of spatial traces and ensure high flexibility and high parallelism in quantum computing operations.

Description

Technical Field

[0001] This disclosure belongs to the field of quantum computing technology, and in particular relates to an ion manipulation method, device and application. Background Technology

[0002] Ion trap quantum computers are one of the possible routes to achieving large-scale quantum computing. Among the possible extensions of ion trap quantum computers, quantum charge-coupled devices (PCDs) are a very promising approach that is being continuously advanced internationally.

[0003] In the process of advancing this approach, it has become increasingly clear that its scalability is limited by the scalability of its circuitry. This is because precise manipulation of ion positions (such as ion movement, ion chain separation or merging, and positional exchange between ions) is crucial for the expansion of quantum charge-coupled devices (QCCs), requiring a large number of DC voltage electrodes. On average, manipulating the spatial position of an ion carrying qubit information in a QCC requires approximately 10 DC voltage electrodes. Therefore, it is foreseeable that an ion trap computer with a 1000-qubit QCC would require around 10,000 DC voltage electrodes. Although ion traps can now be combined with micro-nano fabrication techniques to create chip-type ion traps, making it possible to fabricate so many electrodes on a chip is not impossible. However, completely routing so many wires and connecting them to so many DC voltage sources via spatial wiring is an utterly impossible task.

[0004] Therefore, how to reduce the number of spatial traces coming out of the chip while ensuring the basic operational requirements of the quantum charge-coupled device has become one of the most important issues in the expansion of the quantum charge-coupled device.

[0005] To address the aforementioned issues, Oxford Ionics proposed a solution in its journal article PRX QUANTUM 4,040313 (2023). This solution uses a switching module that receives multiple digital signals to switch the analog signals of the voltage source received by the DC voltage electrode, allowing the analog signals of the voltage source to be multiplexed, thereby reducing the number of traces required.

[0006] However, the scale of its switching network is too large. For the case of 1,000 qubits, the switching module is a line with about 100 inputs and about 10,000 outputs. How to connect such a large line to a chip-type ion trap is a difficult problem.

[0007] Quantinuum also submitted a paper titled "Scalable Multispecies Ion Transport in a Grid Based Surface-Electrode Trap" to the preprint website arXiv, proposing an alternative solution to the aforementioned problem. This solution also requires a switching module that receives multiple digital signals to switch the analog signals from the voltage sources received by the DC voltage electrodes. However, unlike arXiv, not all DC voltage electrodes need to be connected to this switching module (in the case of 1000 qubits, the number of connected electrodes is 2000), and the final input bus to the switching module is only two lines (independent of the number of qubits). Electrodes connected to the switching module are ultimately connected to two DC voltage sources via these two lines, and the switching network selects the connection method between the electrode and the voltage source based on the digital signals, thereby enabling the ions to move left or right at specific locations (i.e., the digital signals control the direction of ion movement). The remaining electrodes not connected to the switching module are divided into several groups, with electrodes in the same group being collinear. Therefore, these electrodes are ultimately connected to the DC voltage sources via a constant root bus (i.e., the number does not increase with the number of qubits). Although the paper has demonstrated that the scheme can realize the basic operations required for ion spatial position transformation in quantum charge-coupled devices.

[0008] However, when using this scheme to perform complete ion trap quantum computing operations (such as quantum state initialization, quantum gates, quantum state measurement, etc.), it was found that the scheme lost the high flexibility and high parallelism of quantum computing operations unique to the quantum charge coupling device extension scheme.

[0009] Specifically, this scheme cannot simultaneously implement arbitrary quantum gate operations in parallel, such as allowing some ions to perform single-qubit gates and others to perform two-qubit gates; it cannot even perform different types of single-qubit gates in parallel; and it cannot allow some ions to be measured while others perform single-qubit gates. Furthermore, since this scheme requires some ions to remain stationary while others move, it can only be achieved dynamically. This results in a higher average thermal rate for the ions in the ion trap using this scheme, which may threaten the fidelity of the quantum state and increase the ion cooling time.

[0010] In summary, current technologies cannot guarantee the high flexibility and high parallelism of quantum computing operations while reducing the number of spatial traces. Summary of the Invention

[0011] To address the aforementioned problems, this disclosure provides an ion manipulation method, apparatus, and application. The ion trap electrode region is divided into N sub-regions, with DC voltage electrodes of the same designation connected to a common power supply. A pre-defined m-type sub-region serves as a switch control area, connected to a switch module and the power supply, while the remaining sub-regions serve as direct control areas, directly connected to the power supply. The switch module outputs signals to control the electric field of the electrodes in the switch control area, causing ions to move or remain stationary. The power supply controls the electric field of the electrodes in the direct control area, controlling the movement or stationary position of ions, thus enabling ion manipulation using an ion trap quantum computer.

[0012] The present invention includes:

[0013] An ion manipulation method, characterized in that it includes:

[0014] The region where all electrodes of the ion trap are located is divided into N sub-regions. Each sub-region is assigned a number and the corresponding electrodes are connected to the same power supply.

[0015] The preset m types of sub-regions are used as switch control areas, and the remaining sub-regions are used as direct control areas. The electrodes in the switch control areas of the same type are first connected to the output terminal of the switch module, and the switch module is connected to the corresponding power supply. The electric field on the electrodes in the area is controlled by switching the switch module. The electrodes in the direct control areas of the same type are directly connected to the corresponding power supply. m is a positive integer less than or equal to N.

[0016] The switch module outputs a control signal to control the electric field corresponding to the electrode in the switch control area, thereby controlling the following arbitrary operations:

[0017] The same type of switch control area controls the movement of all ions;

[0018] The switch control zone of the same type controls the ions to remain in place.

[0019] Controls the movement and dwell of ions in the same type of switch control zone;

[0020] The direction of movement includes any one of up, down, left, and right;

[0021] By directly controlling the electric field corresponding to the electrodes in the same direct control region using a power source, the movement or residence of ions in the same direct control region can be controlled, thereby realizing ion manipulation in an ion trap quantum computer.

[0022] A method for transforming the spatial position of ions, characterized in that the method for transforming the spatial position of ions is implemented based on the aforementioned ion manipulation method, and the method for transforming the spatial position of ions includes:

[0023] Controlling ions to move between adjacent switch control regions and direct control regions, to move between switch control regions, to remain in switch control regions, to move between direct control regions, and / or to remain in direct control regions.

[0024] Furthermore,

[0025] The movement of the controlled ions between adjacent switch control regions and direct control regions includes:

[0026] The voltage change of the power supply corresponding to the electrode in the direct control area is controlled to change the electric field corresponding to the corresponding electrode. When the switch module corresponding to the switch control area receives the first digital signal, it outputs the first control signal to change the electric field corresponding to the electrode in the switch control area, thereby controlling the ions in the direct control area to move to the switch control area, or the ions in the switch control area to move to the direct control area.

[0027] Furthermore,

[0028] The movement of the controlled ions between the switch control regions includes:

[0029] When the switch modules corresponding to two adjacent switch control areas receive different or the same second digital signals, they output different or the same second control signals to change the electric field corresponding to the electrodes of the two adjacent switch control areas, thereby controlling the ions in one switch control area to move to the other switch control area.

[0030] Furthermore,

[0031] The controlled ions remain in the switch control region, including:

[0032] When the switch module corresponding to the switch control area receives the third digital signal, it outputs a third control signal to change the electric field corresponding to the electrode in the switch control area, thereby controlling the residence of ions in the switch control area; or,

[0033] When the switch modules corresponding to the two adjacent switch control areas receive the third digital signal, they both output the third control signal to change the electric field corresponding to the electrodes of the adjacent switch control areas, thereby controlling the ion residence in the two switch control areas.

[0034] An application of ion spatial position change, wherein the application of ion spatial position change is implemented based on the ion spatial position transformation method described above, wherein N sub-regions are divided into n arms, and two adjacent arms intersect and the intersecting area is a common sub-region, and each arm includes multiple switch control areas and multiple direct control areas.

[0035] Its features include:

[0036] Controlling the exchange of desired ions from a subregion of one arm through a cross region to a designated subregion of another arm, the exchange of desired ion positions within the same arm, and / or the exchange of desired ion positions across different arms.

[0037] Furthermore,

[0038] The control of the required ions from a sub-region of one arm through a cross-region to a designated sub-region of another arm includes:

[0039] The desired ions are controlled to move first to a shared sub-region in one arm and then to a shared sub-region in another arm, while keeping the ions in other sub-regions stationary.

[0040] The ions in the shared sub-region are rotated 90 degrees clockwise or counterclockwise, and then the ions are moved from the shared sub-region to a designated sub-region in another arm.

[0041] Furthermore,

[0042] The required ions exist in the form of the same ion chain, wherein the ions in the same ion chain are in the same potential well.

[0043] The exchange of positions of desired ions on the same arm includes:

[0044] Controls the movement of ions on the same arm to a specified sub-region on a specified arm, and controls the position exchange of ions in that specified sub-region;

[0045] After the position is swapped, the swapped ion pair can be controlled to return to its initial position or a specified position.

[0046] Furthermore,

[0047] The required ions exist in the form of two ion chains, wherein the ions in the same ion chain are in the same potential well, and the number of ions in the ion chain is greater than or equal to 1.

[0048] The exchange of positions of desired ions on the same arm also includes:

[0049] Move the two ion chains into two adjacent switch control regions;

[0050] Adjust the electrodes of two adjacent switch control regions so that the two ion chains merge into one ion chain, and then exchange the ion positions in the ion chain.

[0051] The ion chains that have had their positions swapped are split to form new ion chains, and the two new ion chains are moved to the initial position or a specified position.

[0052] Furthermore,

[0053] Controlling the positional exchange of desired ions on the different arms includes:

[0054] Keeping the first ion in a designated arm stationary in that arm, and moving the second ion from the arm to the designated other arm based on the method of controlling the desired ion to move from a sub-region of one arm through an intersection region to a designated sub-region of another arm;

[0055] Then, based on the method of controlling the required ion from a sub-region of one arm through the intersection region to a designated sub-region of another arm, the first ion is moved from the corresponding arm to the arm where the second ion was initially located.

[0056] Then, based on the method of controlling the required ion from a sub-region of one arm through an intersection region to a designated sub-region of another arm, the second ion is moved to the arm where the first ion was initially located.

[0057] Furthermore,

[0058] Also includes:

[0059] Ions are initialized by addressing their ionic state, measured by addressing their quantum state, and / or subjected to parallel quantum gate operations.

[0060] Furthermore,

[0061] Ion state addressing initialization of ions includes:

[0062] Move the ions to the designated sub-region;

[0063] The initialization light is directed onto the ions in the designated sub-region;

[0064] Move the ions back to the initial region.

[0065] Furthermore,

[0066] Quantum state addressing measurements of ions include:

[0067] Move the ion to be tested to the designated sub-region;

[0068] The measuring light is directed onto the ions to be measured in a designated sub-region;

[0069] The measured ions are moved back to the initial sub-region.

[0070] Furthermore,

[0071] Parallel quantum gate operations on ions include:

[0072] Multiple ions are moved to the corresponding designated sub-regions and subjected to single-bit gate-operated lasers or two-bit gate-operated lasers.

[0073] In chronological order of operation time, move the completed ions to the initial subregion or the designated subregion.

[0074] An ion manipulation device, applied to an ion trap quantum computer, includes: an ion trap and a switching module; the input terminal of the switching module is externally connected to a power supply, characterized in that...

[0075] The electrodes of the ion trap are divided into N sub-regions, each sub-region is assigned a number, and the corresponding electrodes are connected to the same power supply.

[0076] The preset m types of sub-regions are used as switch control areas, and the remaining sub-regions are used as direct control areas. The electrode input terminals in the switch control areas are connected to the output terminals of the switch modules, and the input terminals of the switch modules are connected to the corresponding power supplies. The electrodes in the direct control areas of the same type are directly connected to the corresponding power supplies. m is a positive integer less than or equal to N.

[0077] The switching module outputs a control signal to control the electric field corresponding to the electrode in the switching control area, thereby controlling the following arbitrary operations:

[0078] The same type of switch control area controls the movement of all ions;

[0079] The switch control zone of the same type controls the ions to remain in place.

[0080] Controls the movement and dwell of ions in the same type of switch control zone;

[0081] The direction of movement includes any one of up, down, left, and right;

[0082] By directly controlling the electric field corresponding to the electrodes in the same direct control region using a power source, the movement or residence of ions in the same direct control region can be controlled, thereby realizing ion manipulation in an ion trap quantum computer.

[0083] Compared with the prior art, this disclosure has the following advantages:

[0084] The difference between this invention and the prior art is that this invention divides the electrodes of the ion trap into multiple sub-regions and labels each sub-region. The DC voltage electrodes at the same position in the sub-regions with the same label are collinear, that is, grouped collinear. Grouped collinear means that the electrodes in the same group are physically bound together and they share the same voltage source, so that the number of power supply requirements does not increase with the increase of the number of qubits.

[0085] For the switch control area, electrodes of the same type are first connected to the output terminal of the switch module, and then connected to the power supply through the switch module; the switching of the switch module can control the electric field on the electrodes in the area, thereby controlling the movement of ions; when it is necessary for all ions in the switch control area of ​​the same type to move, the switch module switches to output the corresponding control signal, changes the electric field, and makes the ions move in the specified direction.

[0086] In the direct control region, electrodes of the same type are directly connected to the corresponding power supply, which can directly control the electric field to achieve the movement or residence of ions.

[0087] This partitioning and classification control method reduces the number of spatial traces by classifying electrodes and sharing power supplies, thus reducing the complexity and quantity of the circuitry. In terms of ensuring the high flexibility and high parallelism of quantum computing operations, the switch control area can achieve combined control of various ion actions through flexible switching of switch modules, while the direct control area can quickly and directly control ion actions.

[0088] This configuration allows for the simultaneous parallel operation of arbitrary quantum gates, such as enabling some ions to perform single-qubit gates, some ions to perform two-qubit gates, and different types of single-qubit gates to be performed in parallel. It also allows for the measurement of some ions while others perform single-qubit gates.

[0089] Therefore, by controlling the electrode voltage of the switch control area, the present invention can perform ion addressing and movement, which reduces the number of spatial traces while ensuring high flexibility and high parallelism of quantum computing operations.

[0090] Other features and advantages of this disclosure will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the disclosure. The objects and other advantages of this disclosure may be realized and obtained by means of the structures pointed out in the description, claims and drawings. Attached Figure Description

[0091] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0092] Figure 1 A schematic diagram of the functional partitions of the ion trap is shown;

[0093] Figure 2 A schematic diagram illustrating the basic spatial position transformation of an embodiment of this disclosure is shown;

[0094] Figure 3A schematic diagram of ion addressing and movement according to an embodiment of the present disclosure is shown;

[0095] Figure 4 A schematic diagram illustrating a specific embodiment of this disclosure of ions passing from one arm through a cross region to another arm is shown.

[0096] Figure 5 This diagram illustrates the positional exchange between the cooling ion and the bit ion in a specific ion pair according to an embodiment of the present disclosure.

[0097] Figure 6 A schematic diagram illustrating the positional exchange of specific pairs of ions according to an embodiment of this disclosure is shown;

[0098] Figure 7 This illustration shows a schematic diagram of the positional exchange of specific ion pairs on different arms according to an embodiment of the present disclosure;

[0099] Figure 8 A schematic diagram illustrating the addressing initialization or measurement of a quantum state according to an embodiment of this disclosure is shown;

[0100] Figure 9 A schematic diagram of parallel quantum gate operations according to an embodiment of the present disclosure is shown. Detailed Implementation

[0101] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. Based on the embodiments of this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0102] Figure 1 A schematic diagram of the functional partitions of an ion trap according to an embodiment of the present disclosure is shown. The specific connections of the ion trap include:

[0103] First, the electrodes of the ion trap in the entire quantum charge coupling device are divided into N sub-regions and labeled (e.g., Figure 1 In the sub-regions labeled G, M1, M2, etc., DC voltage electrodes at the same location within the same labeled sub-region are connected to the same power supply, where N is a positive integer greater than or equal to 1. To meet the scalability requirements of the electrical system, the number of sub-regions with different labels is a constant (i.e., not related to the number of qubits, such as G, M1, M2, etc.). Figure 1 There are only 11 types of labels in China.

[0104] Then, the preset m types of sub-regions are used as switch control regions, and the remaining sub-regions are used as direct control regions. Electrodes in several labeled switch control regions (or all switch control regions) are selected and connected to the output of the switch module (the following embodiments are for reference only, and the specific selection methods are diverse). The input of the switch module is connected to the corresponding power supply. Electrodes in the same type of direct control region are directly connected to the corresponding power supply. m is a positive integer less than or equal to N. The switch module outputs a control signal to control the electric field corresponding to the electrodes in the switch control region, thereby performing any of the following operations: controlling ions in the same type of switch control region to move; controlling ions in the same type of switch control region to stay still; controlling ions in the same type of switch control region to move and stay still. At the same time, the remaining sub-regions are used as direct control regions, and the power supply is used to directly control the electric field corresponding to the electrodes in the direct control region, thereby controlling the movement or staying of ions in the direct control region, thus ultimately realizing ion manipulation of the ion trap quantum computer. The direction of movement includes any one of up, down, left, and right. In practice, up, down, left, and right are only relative directions of movement, and the angle between each direction is not necessarily 45°. For example, the angle between up and left is not necessarily 45°.

[0105] By switching the circuits through the switching module, in these sub-regions with electrodes connected to the switching module circuits, it is possible to control from which end (e.g., leaving from the left or right) an ion (one or more) leaves the switching control area or does not leave the switching control area, and from which end (e.g., entering from the left or right) an ion (outside the switching control area) enters the switching control area or does not enter the switching control area (for some special cases, such as adiabatic movement, leaving and entering are the reverse processes, so leaving and entering can be set to the same switching state).

[0106] With this setup, along with the necessary optical systems (integrated or spatial), the ion trap of the quantum charge-coupled device can perform all the basic operations required for an ion trap quantum computer (including operations on ion spatial location and qubit operations).

[0107] The following are specific embodiments of the method of the present invention:

[0108] In an embodiment of the invention, N sub-regions are divided into n arms, with adjacent arms intersecting and the intersecting area being a shared sub-region (e.g., ...). Figure 1 The sub-region labeled J in the diagram), each arm includes multiple switch control areas and multiple direct control areas, such as... Figure 1 As shown, this is a horizontal structure with four arms (an arm means two intersecting areas). Figure 1The region between (the subregion labeled J in the text) such as Figure 1 The area enclosed by the black box (the intersection area can be defined as the common part of two adjacent arms, or it can be defined as a separate part) is the ion trap of the quantum charge coupling device with 3 arms in the longitudinal direction. The electrodes are divided into 6 sub-regions.

[0109] The switch-to-switch functions are configured in switch control areas W1, W2, W3, W4 and G1, G2. For simplicity, when a digital signal is given to the switch module, the switch module outputs a control signal that controls the electric field corresponding to the electrode in the switch control area. This allows control of the ions within the switch control area to perform corresponding operations. For example, digital signal 00 indicates that the ion does not leave the corresponding sub-region, digital signal 01 indicates that the ion leaves or enters the corresponding sub-region from the right (or bottom), and digital signal 10 indicates that the ion leaves or enters the corresponding sub-region from the left (or top) (in actual settings, the signals for leaving and entering can also be distinguished).

[0110] Since the transformation of spatial positions within a single subregion (such as ion exchange, ion chain merging, ion chain separation, ion pair rotation, etc.) and quantum state transformations (such as quantum gates and quantum measurements) are existing well-known knowledge, the main focus of this example is on how to use this scheme to achieve addressability of operations. Once addressed, operations within a single subregion will only be mentioned, not described in detail.

[0111] Based on the above structure, the basic spatial transformation operations of ions in this scheme include controlling the movement of ions between adjacent switch control regions and direct control regions, moving between switch control regions, remaining in a switch control region, moving between direct control regions, and / or remaining in a direct control region, specifically including:

[0112] 1) Movement between a switched sub-region (i.e., a switch control region) and an adjacent non-switched sub-region (i.e., a direct control region), that is, controlling the voltage change of the power supply corresponding to the electrode in the direct control region, changing the electric field corresponding to the corresponding electrode, and using the switch module corresponding to the switch control region to output a first control signal when receiving a first digital signal to change the electric field corresponding to the electrode in the switch control region, controlling the movement of ions in the direct control region to the switch control region, or the movement of ions in the switch control region to the direct control region. An example is shown below:

[0113] like Figure 2 As shown in (a), subregion A is a subregion with a switching circuit, while subregions B1 and B2 are subregions without a switching circuit. A digital signal of 01 (10) is given to subregion A. Then, the ion pairs in subregion A move to subregion B2 (B1). Conversely, if it is necessary to move ion pairs from subregion B2 to subregion A, the same applies.

[0114] 2) Movement between sub-regions with switching: This involves using the switching modules corresponding to two adjacent switch control areas to output different or the same second control signals when they receive different or the same second digital signals. This changes the electric field corresponding to the electrodes of the two adjacent switch control areas, controlling the movement of ions from one switch control area to the other. An example is shown below:

[0115] like Figure 2 As shown in (b), sub-regions A1 and A2 are sub-regions with switching lines. A digital signal of 01 is given to region A1, and a digital signal of 10 is given to region A2. Therefore, the ion pair in region A1 will move to region A2, and vice versa.

[0116] 3) Ion residence in a switching sub-region includes ion residence in a single switching sub-region and ion residence in adjacent switching sub-regions. Specifically, 3.1) When the switch module corresponding to the switch control area receives the third digital signal, it outputs a third control signal to change the electric field corresponding to the electrode in the switch control area, thus controlling ion residence in the switch control area. 3.2) When the switch modules corresponding to two adjacent switch control areas both receive the third digital signal, they both output a third control signal to change the electric field corresponding to the electrode in the adjacent switch control areas, thus controlling ion residence in the two switch control areas. The following uses 3.2) as an example:

[0117] like Figure 2 As shown in (c), sub-regions A1 and A2 are sub-regions with switching lines, while sub-region B is a sub-region without switching lines. Therefore, a digital signal of 00 is given to region A1, and a digital signal of 00 is given to region A2. Thus, ions in region A1 will not leave region A1.

[0118] 4) Movement between sub-regions without switching: This part is common knowledge and will not be elaborated further. However, it should be noted that the electrodes in sub-regions with the same label are collinear, so the operation of a sub-region without switching cannot be addressed by itself.

[0119] 5) Staying in a sub-region without switching: This part is common knowledge, so it will not be elaborated further. However, it should be noted that the electrodes in sub-regions with the same label are collinear, so the operation of a sub-region without switching cannot be addressed by itself.

[0120] Next, using the aforementioned fundamental spatial transformations, we will implement the basic operations required for an ion-trap quantum computer with a quantum charge-coupled device (these basic operations include fundamental spatial position operations and fundamental qubit operations), as explained below:

[0121] 1. Basic spatial operations:

[0122] 1.1) Ion loading: This operation is not fundamentally different from the loading method of ion traps in general quantum charge coupling devices, so it will not be described in detail.

[0123] 1.2) Ion addressing and movement, for example: if the initial ion distribution is as follows... Figure 3 (a) shown Figure 3 The ions in the diagram exist in pairs, which is to accommodate the need for coordinated cooling. (The gray ions are cooling ions, and the black ions are bit ions.) To move an ion marked with an arrow to the end of the arrow, the following steps are required:

[0124] First, give Figure 3 (a) The digital signal of the W2 sub-region near the solid coil of the transverse arm is 10, the digital signal of the W1 sub-region near the dashed coil is 01, the digital signal of the W4 sub-region near the solid coil of the longitudinal arm is 10, the digital signal of the G2 sub-region is 01, and the remaining sub-regions are 00. Then the target ion pair begins to move towards the target direction to the next sub-region, while the remaining ions remain stationary. Figure 3 As shown in (b). At this point, the ion pair within the solid coil has reached the designated position, while the ions within the dashed coil need to continue moving. Therefore, a digital signal of 01 is assigned to the W1 sub-region near the dashed coil in the diagram, a digital signal of 10 is assigned to the G1 sub-region, and 00 is assigned to the remaining sub-regions. The ions within the dashed coil then move to the right to the next sub-region, reaching the designated position, as shown in (b). Figure 3 As shown in (c).

[0125] 1.3) Specific ions move from one arm through the intersection region to another arm, that is, the desired ion is controlled to move first to the shared sub-region with the other arm in a sub-region of one arm, while keeping the ions in other sub-regions stationary;

[0126] The ion in the shared sub-region is rotated 90 degrees clockwise or counterclockwise, and then the ion is moved from the shared sub-region to a designated sub-region in another arm, as shown in the example below:

[0127] If the initial ion distribution is as follows Figure 4 As shown in (a), if it is necessary to move the ion with the arrow in the figure to the position at the end of the arrow, the following operation is required:

[0128] First, following the method described in "Addressing and Moving of Ions," the target ion pair within the dashed circle can be made to move as follows: Figure 4 The target ion pairs are positioned as shown in (b), while the other ion pairs remain stationary. Then, the electrodes of M2 and J are adjusted so that all target ion pairs reach the J sub-region, as shown in (b). Figure 4 As shown in (c). Next, the electrodes in the J sub-region are manipulated to rotate the target ion pair 90 degrees clockwise, so that it becomes as shown in (c). Figure 4The state shown in (d) is then manipulated. Next, the electrodes in sub-region J and M3 are manipulated so that the two target ion pairs reach region M3, as shown in (d). Figure 4 As shown in (e). Finally, following the method described in "Addressing and Moving of Ions," the target ion pairs within the dashed circle can all reach their destination, as shown in [example]. Figure 4 As shown in (f).

[0129] 1.4) The exchange of positions of specific ions on the same arm, including 1.4.1) Ions existing in the form of the same ion chain, wherein ions in the same ion chain are in the same potential well; 1.4.2) The desired ion existing in the form of two ion chains, wherein ions in the same ion chain are in the same potential well, and the number of ions in the ion chain is greater than or equal to 1, wherein 1.4.1) includes:

[0130] It controls ions on the same arm to move to a specified sub-region on a specified arm, and controls the position exchange of ions in that specified sub-region; after the position exchange, it can control the exchanged ion pair to return to the initial position or the specified position.

[0131] 1.4.2) includes moving two ion chains into two adjacent switch control regions; adjusting the electrodes of the two adjacent switch control regions so that the two ion chains merge into one ion chain, and then exchanging the ion positions in the ion chain; splitting the ion chain after the position exchange to form a new ion chain, and moving the two new ion chains to the initial position or a specified position.

[0132] Among them, 1.4.1) is an example as follows: the positions of the cooling ions and bit ions in a specific ion chain are exchanged: if the initial ion distribution is as follows Figure 5 As shown in (a), if it is necessary to swap the positions of the cooling ions and bit ions in the ion chains circled in the figure, the following operations are required: First, following the method described in "Ion Addressing and Moving", the target ion chains within the solid and dashed circles can be moved to the positions shown in (a). Figure 5 The position shown in (b) is maintained, while the other ion chains remain stationary. Then, the electrodes on M1 and M3 are adjusted so that the positions of the cooled ions and bit ions in the ion chains of M1 and M3 are exchanged, resulting in the position shown in (b). Figure 5 The result is shown in (c). Finally, following the method described in "Addressing and Moving of Ions," the target ion chain within the solid and dashed circles can be returned to its initial position, as shown in [example]. Figure 5 As shown in (d).

[0133] The example in 1.4.2) is as follows: positional exchange of two specific pairs of ion chains: if the initial ion distribution is as follows Figure 6As shown in (a), if it is necessary to swap the positions of the ion chains within the circles in the diagram (the coloring of the ion chains in the diagram is only to distinguish these two pairs of ions, and does not imply that they are different types of ions), the following operations are required: First, provide digital signals to sub-regions W1 (01) near the solid coil, sub-region G1 (10), sub-region W2 (10) near the dashed coil, sub-region G2 (01), and the remaining sub-regions (00). Then, the ion chains within the solid coils can be moved to sub-region G1, and the ion chains within the dashed coils can be moved to sub-region G2, as shown below. Figure 6 As shown in (b). Then, the electrodes of sub-regions G1 and G2 are adjusted so that the two pairs of ion chains merge into one ion chain. Then the ion positions are rearranged, and finally the rearranged ion chain is separated into two pairs of ion chains (as shown in [b]). Figure 6 (c) shown). Finally, following the method described in "Addressing and Moving of Ions", the target ion chain is moved back to its initial position, as shown. Figure 6 As shown in (d).

[0134] 1.5) Positional exchange of specific ion pairs on different arms, including:

[0135] Keeping the first ion in a designated arm stationary in that arm, and moving the second ion from the arm to the designated other arm based on the method of controlling the desired ion to move from a sub-region of one arm through an intersection region to a designated sub-region of another arm;

[0136] Then, based on the method of controlling the required ion from a sub-region of one arm through the intersection region to a designated sub-region of another arm, the first ion is moved from the corresponding arm to the arm where the second ion was initially located.

[0137] Based on the method of controlling the required ion to move from a sub-region of one arm through a cross region to a designated sub-region of another arm, the second ion is moved to the arm where the first ion was initially located. An example is shown below: The most direct way is to combine the method of "a specific ion moving from one arm through a cross region to another arm" with the method of "exchanging the positions of specific ions on the same arm." However, there is another way to achieve this, if the initial ion distribution is as follows... Figure 7 As shown in (a), if it is necessary to swap the positions of the ion pairs within the circles in the figure, the following operations are required: First, keep the ions within the solid circle stationary (i.e., the digital signal received by this sub-region is 00), and then use the method of "a specific ion moving from one arm through the intersection region to another arm" to move the ions within the dashed circle to... Figure 7 (a) The region indicated by the arrow (since it's from one horizontal arm to another, no rotation is needed in the J sub-region; other operations remain the same), such as Figure 7As shown in (b). Then, using the method of "specific ions moving from one arm through the intersection region to another arm", the ions within the solid coil are moved to... Figure 7 (b) The area indicated by the arrow. Finally, the ions within the dashed circle are moved using the method of "specific ions moving from one arm through the intersection region to another arm". Figure 7 (c) The area indicated by the arrow yields the following result: Figure 7 The result is shown in (d). Thus, the positional exchange of specific ion pairs on different arms is completed.

[0138] 2. Basic operations of qubits include a) addressing initialization of ions into their ionic states, b) addressing measurement of ions into their quantum states, and / or c) parallel quantum gate operations. Specifically, a) addressing initialization of ions into their ionic states includes: moving the ion to a designated sub-region; shining initialization light onto the ion in the designated sub-region; and moving the ion back to the initial region. b) addressing measurement of ions into their quantum states includes: moving the ion to be measured to a designated sub-region; shining measurement light onto the ion to be measured in the designated sub-region; and moving the measured ion back to the initial sub-region. c) parallel quantum gate operations include: moving multiple ions to corresponding designated sub-regions and shining a single-qubit gate laser or a two-qubit gate laser onto the ions; and moving the ions whose operations have been completed to the initial sub-region or a designated sub-region in chronological order of operation.

[0139] Among them, a) addressable initialization of quantum states, for example: For some special algorithms or situations where ions are lost and need to be replenished, it is necessary to reinitialize the ion states of some measured ions before continuing to use them. For the reinitialization operation, since only a portion of the ions need to be initialized, the ion trap needs to be addressable for the initialization operation. If the initial ion distribution is as follows... Figure 8 As shown in (a), it is necessary to... Figure 8 (a) To reinitialize the bit ions within the middle loop, the following operations are required: First, as... Figure 8 As shown in (a), following the method described in "Addressing and Moving of Ions," the ions within the solid circle are moved to the region indicated by the arrow, resulting in the following... Figure 8 The result is shown in (b). Then, the initial optical addressing is injected. Figure 8 (b) Initialize the quantum state of the bit ion within the real coil that needs initialization. Finally, move the ion pair back to the initial region as described in "Addressing and Moving Ions". Figure 8 As shown in (c).

[0140] b) Addressable measurement of quantum states, as shown in the following example: For some special algorithms or fault-tolerant quantum computing processes that require quantum error correction, it is necessary to be able to addressably measure the quantum states of a subset of ions. The implementation of this type of operation is completely similar to "addressable initialization of quantum states," simply requiring the initialization light to be replaced with the measurement light; therefore, it will not be elaborated upon here.

[0141] c) Parallel quantum gate operations, for example: if the initial ion distribution is as follows... Figure 9 As shown in (a), to perform two-bit gate operations on the two bit ions within the real coil and single-bit gate operations on the bit ions within the dashed coil in parallel, the following operations are required: First, following the method described in "Ion Addressing and Moving," move the two pairs of ions in W3 to their nearby G1 sub-regions, and move the pairs of ions in W4 to their nearby G2 sub-regions, as follows. Figure 9 As shown in (b). Then, for Figure 9 (b) Two bit ions within the solid coil undergo a two-bit gate operation laser, while the bit ions within the dashed coil undergo a single-bit gate operation laser. Then, since the time for a single-bit gate is much shorter than the time for a two-bit gate, after the single-bit gate operation ends, a 10 digital signal needs to be sent to the G1 sub-region near the dashed coil, a 01 digital signal to the W3 sub-region, while the digital signals to the remaining sub-regions remain 00. At this point, the ion pair undergoing the single-bit gate leaves the G1 sub-region and returns to its initial position, while the ion pair undergoing the two-bit gate continues the two-bit gate operation within the G sub-region. Figure 9 As shown in (c). After the two-bit gate operation is complete, adjust the electrodes of the G1 and G2 sub-regions within the real coil to separate the two ion pairs. Finally, following the method described in "Ion Addressing and Movement," move these two ion pairs back to their initial positions, as shown. Figure 9 As shown in (d). In addition, if the two-bit gate in the above example is replaced with another single-bit gate, the operation of performing single-bit gates in parallel is realized, which will not be described in detail here.

[0142] Following a method similar to parallel quantum gates, the initialization of the quantum state of ions, the quantum gate operation of ions, and the measurement of the quantum state of ions can be performed in parallel.

[0143] In addition, in some embodiments of the present invention, an ion manipulation device is also provided for use in an ion trap quantum computer, comprising: an ion trap and a switching module; the input terminal of the switching module is connected to an external power supply, and the electrodes of the ion trap are divided into N sub-regions, each sub-region being assigned a corresponding label, and electrodes at the same position in the sub-regions with the same label are connected to the same power supply.

[0144] A portion of the sub-region is designated as a switch control area, and the electrode input terminal in the switch control area is connected to the output terminal of the switch module.

[0145] By using the control signal output by the switch module, the electric field corresponding to the electrode in the switch control area is controlled, thereby controlling the movement and / or residence of ions in the switch control area, realizing ion manipulation of the ion trap quantum computer.

[0146] In addition, in some embodiments of the present invention, a computer device is also provided, characterized in that it includes:

[0147] Memory, which stores executable program code;

[0148] The processor is used to call the executable program code and execute the above-described method.

[0149] In addition, in some embodiments of the present invention, a computer storage medium is provided, characterized in that the computer storage medium stores a computer program, which, when run on a computer, causes the computer to execute the method described above.

[0150] Although the present disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. A method for ion manipulation, characterized in that, include: The region where all electrodes of the ion trap are located is divided into N sub-regions. Each sub-region is assigned a number and the corresponding electrodes are connected to the same power supply. The preset m types of sub-regions are used as switch control areas, and the remaining sub-regions are used as direct control areas. The electrodes in the switch control areas of the same type are first connected to the output terminal of the switch module, and the switch module is connected to the corresponding power supply. The electric field on the electrodes in the area is controlled by switching the switch module. The electrodes in the direct control areas of the same type are directly connected to the corresponding power supply. m is a positive integer less than or equal to N. The switch module outputs a control signal to control the electric field corresponding to the electrode in the switch control area, thereby controlling the following arbitrary operations: The same type of switch control area controls the movement of all ions; The switch control zone of the same type controls the ions to remain in place. In the same type of switch control area, ions in some sub-regions move, while ions in other sub-regions remain stationary. The direction of movement includes any one of up, down, left, and right; By directly controlling the electric field corresponding to the electrodes in the same direct control region using a power source, the movement or residence of ions in the same direct control region can be controlled, thereby realizing ion manipulation in an ion trap quantum computer.

2. A method for transforming the spatial position of ions, characterized in that, The method for transforming the spatial position of ions is implemented based on the ion manipulation method of claim 1, and the method for transforming the spatial position of ions includes: Controlling ions to move between adjacent switch control regions and direct control regions, to move between switch control regions, to remain in switch control regions, to move between direct control regions, and / or to remain in direct control regions.

3. The method according to claim 2, characterized in that, The movement of the controlled ions between adjacent switch control regions and direct control regions includes: The voltage change of the power supply corresponding to the electrode in the direct control area is directly controlled to change the electric field corresponding to the electrode. When the switch module corresponding to the switch control area receives the first digital signal, it outputs the first control signal to change the electric field corresponding to the electrode in the switch control area, thereby controlling the ions in the direct control area to move to the switch control area, or the ions in the switch control area to move to the direct control area.

4. The method according to claim 2, characterized in that, The movement of the controlled ions between the switch control regions includes: When the switch modules corresponding to two adjacent switch control areas receive different or the same second digital signals, they output different or the same second control signals to change the electric field corresponding to the electrodes of the two adjacent switch control areas, thereby controlling the ions in one switch control area to move to the other switch control area.

5. The method according to claim 2, characterized in that, The controlled ions remain in the switch control region, including: When the switch module corresponding to the switch control area receives the third digital signal, it outputs a third control signal to change the electric field corresponding to the electrode in the switch control area, thereby controlling the residence of ions in the switch control area; or, When the switch modules corresponding to the two adjacent switch control areas receive the third digital signal, they both output the third control signal to change the electric field corresponding to the electrodes of the adjacent switch control areas, thereby controlling the ion residence in the two switch control areas.

6. A method for applying changes in the spatial position of ions, wherein the application of the changes in the spatial position of ions is implemented based on the method for transforming the spatial position of ions according to any one of claims 2-5, wherein, The N sub-regions are divided into n arms. The two adjacent arms intersect each other and the intersecting area is a shared sub-region. Each arm includes multiple switch control areas and multiple direct control areas. Its features include: Controlling the exchange of desired ions from a subregion of one arm through a cross region to a designated subregion of another arm, the exchange of desired ion positions within the same arm, and / or the exchange of desired ion positions across different arms.

7. The application method according to claim 6, characterized in that, The control of the required ions from a sub-region of one arm through a cross-region to a designated sub-region of another arm includes: The desired ions are controlled to move first to a shared sub-region in one arm and then to a shared sub-region in another arm, while keeping the ions in other sub-regions stationary. By manipulating the ions in the shared sub-region to rotate 90 degrees clockwise or counterclockwise, the ions can be moved from the shared sub-region to a designated sub-region in another arm.

8. The application method according to claim 7, characterized in that, The required ions exist in the form of the same ion chain, wherein the ions in the same ion chain are in the same potential well. The exchange of positions of desired ions on the same arm includes: Controls the movement of ions on the same arm to a specified sub-region on a specified arm, and controls the position exchange of ions in that specified sub-region; After the position is swapped, the swapped ion pair can be controlled to return to its initial position or a specified position.

9. The application method according to claim 7, characterized in that, The required ions exist in the form of two ion chains, wherein the ions in the same ion chain are in the same potential well, and the number of ions in the ion chain is greater than or equal to 1. The exchange of positions of desired ions on the same arm also includes: Move the two ion chains into two adjacent switch control regions; Adjust the electrodes of two adjacent switch control regions so that the two ion chains merge into one ion chain, and then exchange the ion positions in the ion chain. The ion chains that have had their positions swapped are split to form new ion chains, and the two new ion chains are moved to the initial position or a specified position.

10. The application method according to claim 8 or 9, characterized in that, The control of the positional exchange of desired ions on the different arms includes: Keeping the first ion in a designated arm stationary in that arm, and moving the second ion from the arm to the designated other arm based on the method of controlling the desired ion to move from a sub-region of one arm through an intersection region to a designated sub-region of another arm; Based on the method of controlling the required ion from a sub-region of one arm through an intersection region to a designated sub-region of another arm, the first ion is moved from the corresponding arm to the arm where the second ion was initially located. Based on the method of controlling the required ion to move from a sub-region of one arm through an intersection region to a designated sub-region of another arm, the second ion is moved to the arm where the first ion was initially located.

11. The application method according to claim 10, characterized in that, Also includes: Ions are initialized by addressing their ionic state, measured by addressing their quantum state, and / or subjected to parallel quantum gate operations.

12. The application method according to claim 11, characterized in that, The process of initializing the ions by addressing their ionic states includes: Move the ions to the designated sub-region; The initialization light is directed onto the ions in the designated sub-region; Move the ions back to the initial region.

13. The application method according to claim 11, characterized in that, The quantum state addressing measurement of ions includes: Move the ion to be tested to the designated sub-region; The measuring light is directed onto the ions to be measured in a designated sub-region; The measured ions are moved back to the initial sub-region.

14. The application method according to claim 11, characterized in that, The parallel quantum gate operations on ions include: Multiple ions are moved to the corresponding designated sub-regions and subjected to single-bit gate-operated lasers or two-bit gate-operated lasers. In chronological order of operation time, move the completed ions to the initial subregion or the designated subregion.

15. An ion manipulation device for use in an ion trap quantum computer, comprising: An ion trap and a switching module; the input terminal of the switching module is connected to an external power supply, characterized in that... The electrodes of the ion trap are divided into N sub-regions, each sub-region is assigned a number, and the corresponding electrodes are connected to the same power supply. The preset m types of sub-regions are used as switch control areas, and the remaining sub-regions are used as direct control areas. The electrode input terminals in the switch control areas are connected to the output terminals of the switch modules, and the input terminals of the switch modules are connected to the corresponding power supplies. The electrodes in the direct control areas of the same type are directly connected to the corresponding power supplies. m is a positive integer less than or equal to N. The switching module outputs a control signal to control the electric field corresponding to the electrode in the switching control area, thereby controlling the following arbitrary operations: The same type of switch control area controls the movement of all ions; The switch control zone of the same type controls the ions to remain in place. In the same type of switch control area, ions in some sub-regions move, while ions in other sub-regions remain stationary. The direction of movement includes any one of up, down, left, and right; By directly controlling the electric field corresponding to the electrodes in the same direct control region using a power source, the movement or residence of ions in the same direct control region can be controlled, thereby realizing ion manipulation in an ion trap quantum computer.

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