Method for sorting silicon wafers
By collecting customer process data and analyzing it using the MES system, the segmented screening and allocation of silicon wafers were achieved, solving the problem of mismatch between silicon wafer resistivity and customer requirements, and improving the processing yield and product quality of silicon wafers.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GUANGDONG GOKIN SOLAR ENERGY TECH CO LTD
- Filing Date
- 2024-07-15
- Publication Date
- 2026-05-12
AI Technical Summary
In existing technologies, the resistivity of silicon wafers cannot be precisely matched with customer requirements, resulting in a wide range of resistivity distributions within the same batch of silicon wafers, which affects the yield of subsequent processing and product quality.
By conducting product research and collecting process data from clients, and using the MES system to analyze and classify clients into low-resistivity and high-resistivity clients, the sorting method of the sorting machine was adjusted, and a segmented screening method was adopted to sort silicon wafers into low-resistivity and high-resistivity products and send them to the corresponding clients respectively.
This reduces the resistivity distribution range of silicon wafers in the same batch, improves the accuracy of resistivity matching, and enhances product delivery quality and subsequent processing yield.
Smart Images
Figure CN119076426B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the technical field of silicon wafer packaging, and more specifically to a method for sorting and matching silicon wafers. Background Technology
[0002] Currently, the typical method for collecting and shipping monocrystalline silicon wafers is as follows: wafers are inspected by AOI (Automated Optical Inspection) equipment to determine their quality. If qualified, the wafers are sorted, packaged, and shipped to the customer. However, this method results in the resistivity of the wafers not precisely matching the customer's required resistivity, thus compromising the quality of shipped products. Furthermore, the existing sorting method leads to a wide distribution of resistivity within the same batch of wafers, reducing the proportion of wafers that meet processing requirements and consequently lowering the yield of subsequent processing within that batch. Summary of the Invention
[0003] In order to overcome the shortcomings of the prior art, the purpose of this invention is to provide a silicon wafer sorting and matching method that helps to narrow the resistivity distribution range of target silicon wafers in the same batch, thereby improving the resistivity distribution concentration of target silicon wafers in the same batch and thus helping to improve the yield of subsequent processing of silicon wafers. Furthermore, the method also helps to improve the matching accuracy between silicon wafer resistivity and customer-required resistivity, thereby improving product delivery quality.
[0004] To solve the above problems, the technical solution adopted by the present invention is as follows:
[0005] A method for sorting and matching silicon wafers, comprising:
[0006] Conduct product research with clients to collect process data;
[0007] The process data is uploaded to the MES system for processing and analysis to obtain the sum of the customer's judgment values. If the sum of the judgment values is less than or equal to the set standard value, the customer is marked as a low resistivity customer. If the sum of the judgment values is greater than the set standard value, the customer is marked as a high resistivity customer.
[0008] The sorting machine sorts silicon wafers with resistivity greater than or equal to a and less than or equal to X into low resistivity products, and sorts silicon wafers with resistivity greater than X and less than or equal to b into high resistivity products, wherein b is greater than a. The low resistivity products are used to be matched and sent to the low resistivity customers, and the high resistivity products are used to be matched and sent to the high resistivity customers.
[0009] In some possible implementations, the process data includes front diffusion temperature, front diffusion time, back diffusion temperature, back diffusion time, number of front main gates, number of front fine gates, number of back main gates, number of back fine gates, and sheet resistance value.
[0010] The steps for obtaining the sum of the judgment values include:
[0011] Set standard values for each parameter of the process data within the MES system;
[0012] The MES system compares the parameter values of the input process data with the corresponding standard values. If the parameter value of the input process data is less than the standard value, the determination value is 0; if the parameter value of the input process data is equal to the standard value, the determination value is 0.5; if the parameter value of the input process data is greater than the standard value, the determination value is 1.
[0013] The sum of the judgment values is obtained by adding up the judgment values of all parameters.
[0014] In some possible implementations, the set standard value is 4.5.
[0015] In some possible implementations, the standard value for the pre-diffusion temperature is 850°C, the standard value for the pre-diffusion time is 100 seconds, the standard value for the post-diffusion temperature is 1045°C, and the standard value for the post-diffusion time is 160 seconds.
[0016] In some possible implementations, the standard value for the number of front main gates is 16 pcs, the standard value for the number of front fine gates is 150 pcs, the standard value for the number of rear main gates is 16 pcs, and the standard value for the number of rear fine gates is 160 pcs.
[0017] In some possible implementations, the standard value for the sheet resistance is 110 Ω / sq.
[0018] Compared with the prior art, the beneficial effects of the present invention are as follows:
[0019] In this application, process data from target customers is collected in advance and uploaded to the MES system for analysis to classify customers into low-resistivity and high-resistivity customers. Furthermore, the existing sorting machine's sorting method is modified to employ segmented screening, thus narrowing the resistivity distribution range of the same batch of target silicon wafers. This improves the concentration of resistivity distribution within the batch, thereby enhancing the yield of subsequent silicon wafer processing. Finally, high-resistivity silicon wafers are matched and shipped to high-resistivity customers, and low-resistivity silicon wafers are matched and shipped to low-resistivity customers. This improves the accuracy of matching silicon wafer resistivity with customer-required resistivity, ultimately improving product delivery quality.
[0020] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments. Attached Figure Description
[0021] Figure 1 This is a schematic flowchart of a silicon wafer sorting and matching method provided in an embodiment of this application. Detailed Implementation
[0022] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.
[0023] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. It should be noted that when an element is referred to as "fixed to" another element, it may be directly on the other element or there may be an intervening element. When an element is referred to as "connected to" another element, it may be directly connected to the other element or there may be an intervening element. When an element is referred to as "disposed on" another element, it may be disposed on the other element or there may be an intervening element.
[0024] Reference Figure 1 One embodiment of this application provides a method for sorting and matching silicon wafers, comprising the following steps:
[0025] Conduct product research with clients to collect process data.
[0026] The process data is uploaded to the MES system for processing and analysis to obtain the sum of the customer's judgment values. If the sum of the judgment values is less than or equal to the set standard value, the customer is marked as a low resistivity customer. If the sum of the judgment values is greater than the set standard value, the customer is marked as a high resistivity customer.
[0027] In some embodiments, process data includes pre-diffusion temperature, pre-diffusion time, post-diffusion temperature, post-diffusion time, number of front-side main gates, number of front-side fine gates, number of back-side main gates, number of back-side fine gates, and sheet resistance. These parameters are selected based on research into the subsequent processing of silicon wafers into solar cells, ensuring that the sum of the judgment values is appropriate to improve customer classification accuracy.
[0028] In some embodiments, the step of deriving the sum of the determination values includes:
[0029] Set standard values for various parameters of the process data within the MES system.
[0030] The MES system compares the parameter values of the input process data with the corresponding standard values. If the parameter value of the input process data is less than the standard value, the judgment value is 0; if the parameter value of the input process data is equal to the standard value, the judgment value is 0.5; and if the parameter value of the input process data is greater than the standard value, the judgment value is 1.
[0031] The sum of the judgment values is obtained by adding up the judgment values of all parameters.
[0032] In some embodiments, the standard value is set to 4.5.
[0033] In some embodiments, the standard value for the pre-diffusion temperature is 850°C, the standard value for the pre-diffusion time is 100 seconds, the standard value for the post-diffusion temperature is 1045°C, and the standard value for the post-diffusion time is 160 seconds.
[0034] In some embodiments, the standard value for the number of front main gates is 16pcs, the standard value for the number of front fine gates is 150pcs, the standard value for the number of rear main gates is 16pcs, and the standard value for the number of rear fine gates is 160pcs.
[0035] In some embodiments, the standard value for sheet resistance is 110Ω / sq.
[0036] The specific values selected for the parameters mentioned above in this application are beneficial to further ensuring the accuracy of customer classification, thereby further improving the matching accuracy.
[0037] Specifically, the customer's process data is input into the MES system. For example, if the input pre-diffusion temperature is less than 850℃, the output value for this parameter is 0; if the input pre-diffusion temperature is greater than 850℃, the output value is 1; and if the input pre-diffusion temperature is equal to 850℃, the output value is 0.5. Similarly, if the input pre-diffusion time is less than 100 seconds, the output value for this parameter is 0; if the input pre-diffusion time is equal to 100 seconds, the output value is 0.5; and if the input pre-diffusion time is greater than 100 seconds, the output value is 1. If the input backdiffusion temperature is less than 1045℃, the output value for this parameter is 0. If the input backdiffusion temperature is equal to 1045℃, the output value is 0.5. If the input backdiffusion temperature is greater than 1045℃, the output value is 1. If the input backdiffusion time is less than 160 seconds, the output value for this parameter is 0. If the input backdiffusion time is equal to 160 seconds, the output value is 0.5.
[0038] For example, if the input value of the number of front main gates is less than 16pcs, the output value for this parameter is 0; if the input value of the number of front main gates is equal to 16pcs, the output value is 0.5; and if the input value of the number of front main gates is greater than 16pcs, the output value is 1. Similarly, if the input value of the number of front fine gates is less than 150pcs, the output value for this parameter is 0; if the input value of the number of front fine gates is equal to 150pcs, the output value is 0.5; and if the input value of the number of front fine gates is greater than 150pcs, the output value is 1. If the input value for the number of rear main gates is less than 16pcs, the output value for this parameter is 0. If the input value for the number of rear main gates is equal to 16pcs, the output value is 0.5. If the input value for the number of rear main gates is greater than 16pcs, the output value is 1. Similarly, if the input value for the number of rear fine gates is less than 160pcs, the output value for this parameter is 0. If the input value for the number of rear fine gates is equal to 160pcs, the output value is 0.5. If the input value for the number of rear fine gates is greater than 160pcs, the output value is 1.
[0039] For example, if the input sheet resistance value is less than 110 Ω / sq, the output value for this parameter is 0; if the input sheet resistance value is equal to 110 Ω / sq, the output value is 0.5; and if the input sheet resistance value is greater than 110 Ω / sq, the output value is 1. Finally, the sum of the values for each parameter is calculated. If the sum is less than or equal to 4.5, the customer is marked as a low resistivity customer; if the sum is greater than 4.5, the customer is marked as a high resistivity customer.
[0040] The sorting machine sorts silicon wafers with resistivity greater than or equal to a and less than or equal to X into low-resistivity products, which can be concentrated in the first material box. It sorts silicon wafers with resistivity greater than X and less than or equal to b into high-resistivity products, which can be concentrated in the second material box, where b is greater than a. Low-resistivity products are used to match and be shipped to low-resistivity customers, and high-resistivity products are used to match and be shipped to high-resistivity customers, thereby improving the accuracy of matching silicon wafer resistivity with customer needs.
[0041] For example, if the point resistivity screening range of the entire batch of silicon wafers is 0.4–1.1 Ω·cm, then a is 0.4 and b is 1.1. If the resistivity range of silicon wafers required by the low-resistivity customer is 0.4–0.7 Ω·cm, then X is 0.7; if the resistivity range of silicon wafers required by the high-resistivity customer is 0.7–1.1 Ω·cm, then X is 0.7. In this case, the sorting machine can sequentially detect the resistivity of multiple silicon wafers through the AOI equipment in the packaging process, sorting the silicon wafers with a resistivity of 0.4–0.7 Ω·cm into the first material box, and then packaging the silicon wafers in the first material box and sending them to the low-resistivity customer. The sorting machine can sort silicon wafers with a resistivity greater than 0.7 Ω·cm to 1.1 Ω·cm into the second material box, and then packaging the silicon wafers in the second material box and sending them to the high-resistivity customer.
[0042] In this application, process data from target customers is collected in advance and uploaded to the MES system for analysis to classify customers into low-resistivity and high-resistivity customers. Furthermore, the existing sorting machine's sorting method is modified to employ segmented screening, thus narrowing the resistivity distribution range of the same batch of target silicon wafers. This improves the concentration of resistivity distribution within the batch, thereby enhancing the yield of subsequent silicon wafer processing. Finally, high-resistivity silicon wafers are matched and shipped to high-resistivity customers, and low-resistivity silicon wafers are matched and shipped to low-resistivity customers. This improves the accuracy of matching silicon wafer resistivity with customer-required resistivity, ultimately improving product delivery quality.
[0043] The above embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of protection of the present invention. Any non-substantial changes and substitutions made by those skilled in the art based on the present invention shall fall within the scope of protection claimed by the present invention.
Claims
1. A method for sorting and matching silicon wafers, characterized in that, include: Conduct product research with clients to collect process data; The process data is uploaded to the MES system for processing and analysis to obtain the sum of the customer's judgment values. If the sum of the judgment values is less than or equal to the set standard value, the customer is marked as a low resistivity customer. If the sum of the judgment values is greater than the set standard value, the customer is marked as a high resistivity customer. The sorting machine sorts silicon wafers with resistivity greater than or equal to a and less than or equal to X into low resistivity products, and sorts silicon wafers with resistivity greater than X and less than or equal to b into high resistivity products, wherein b is greater than a. The low resistivity products are used to be matched and sent to the low resistivity customers, and the high resistivity products are used to be matched and sent to the high resistivity customers.
2. The silicon wafer sorting and matching method as described in claim 1, characterized in that, The process data includes front diffusion temperature, front diffusion time, back diffusion temperature, back diffusion time, number of front main gates, number of front fine gates, number of back main gates, number of back fine gates, and sheet resistance value. The steps for obtaining the sum of the judgment values include: Set standard values for each parameter of the process data within the MES system; The MES system compares the parameter values of the input process data with the corresponding standard values. If the parameter value of the input process data is less than the standard value, the determination value is 0; if the parameter value of the input process data is equal to the standard value, the determination value is 0.5; if the parameter value of the input process data is greater than the standard value, the determination value is 1. The sum of the judgment values is obtained by adding up the judgment values of all parameters.
3. The silicon wafer sorting and matching method as described in claim 2, characterized in that, The set standard value is 4.
5.
4. The silicon wafer sorting and matching method as described in claim 3, characterized in that, The standard value for the pre-diffusion temperature is 850℃, the standard value for the pre-diffusion time is 100 seconds, the standard value for the post-diffusion temperature is 1045℃, and the standard value for the post-diffusion time is 160 seconds.
5. The silicon wafer sorting and matching method as described in claim 4, characterized in that, The standard value for the number of front main gates is 16pcs, the standard value for the number of front fine gates is 150pcs, the standard value for the number of rear main gates is 16pcs, and the standard value for the number of rear fine gates is 160pcs.
6. The silicon wafer sorting and matching method as described in claim 5, characterized in that, The standard value for the sheet resistance is 110Ω / sq.