Display panel and display device

Abstract

The application provides a display panel and a display device. By making the second spacing greater than the first spacing, the width of the eave structure extending out of the conductive part in the second side wall is reduced under the condition of ensuring good conductive lapping stability of the first side wall and the sub-pixel, thereby improving the conductive lapping stability of the second side wall and the sub-pixel. In addition, the side wall is arranged to be inclined relative to the sub-pixel near the side edge of the sub-pixel, so as to improve the conductive lapping stability of the side wall and the sub-pixel.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display panel and a display device. BACKGROUND

[0002] With the development of display technology, in order to reduce the cost, the OLED (Organic Light-Emitting Diode) display device in the cathode and the light-emitting layer is formed by removing the fine mask plate. The cathode is formed by evaporation. The cathode is overlapped with the isolation structure to realize the electrical connection between the cathodes.

[0003] However, the evaporation method may cause the risk of poor overlap between the cathode and the isolation structure. SUMMARY

[0004] The technical problem to be solved by the present application is to provide a display panel and a display device to solve the problem of poor overlap between the cathode and the isolation structure in the prior art.

[0005] To solve the above technical problem, the first technical solution provided by the present application is a display panel, comprising:

[0006] A pixel definition layer having a plurality of pixel openings;

[0007] A sub-pixel unit, each sub-pixel unit comprising:

[0008] A sub-pixel disposed in the pixel opening; the light-emitting layer and the cathode of the sub-pixel are sequentially evaporated by an evaporation source in the pixel opening;

[0009] An isolation structure protruding from the pixel definition layer and surrounding the pixel opening; the side wall of the isolation structure comprises a conductive part and a roof structure shielding the conductive part; in the direction parallel to the conductive part, the roof structure extends out of the conductive part; the conductive part is electrically connected to the sub-pixel; the side wall comprises a first side wall and a second side wall;

[0010] Wherein,

[0011] The inner side wall of the first side wall is arranged in the displacement direction of the evaporation source; in the first side wall, the distance between the side edges of the roof structure and the conductive part close to each other is a first distance; in the second side wall, the distance between the side edges of the roof structure and the conductive part close to each other is a second distance; in a single sub-pixel unit, the second distance is greater than the first distance;

[0012] Or,

[0013] In a plane direction parallel to the pixel definition layer, the side edges of the sub-pixels extending along the long side direction of the evaporation source are obliquely arranged between the side edges of the side walls close to each other.

[0014] In the plane direction parallel to the pixel definition layer, the side edges of the roof structures in the same side wall close to the conductive parts are arranged in parallel to each other; the spacing between the side edges of the roof structures close to the conductive parts is a preset value, which is greater than or equal to 0.3 microns and less than or equal to 1.2 microns.

[0015] The difference between the second spacing and the first spacing is less than or equal to 0.3 microns.

[0016] In the plane direction parallel to the pixel definition layer, the side edges of the sub-pixels close to the side walls are arranged in parallel to each other; the inner side wall of the second side wall extends along the long side direction of the evaporation source.

[0017] The inner side wall of the oblique side wall is arranged in the extension direction intersecting the long side direction of the evaporation source and intersecting the displacement direction of the evaporation source.

[0018] The included angle between the extension direction of the inner side wall of the oblique side wall and the long side direction of the evaporation source is greater than 5 degrees and less than 20 degrees.

[0019] In the oblique side wall, the spacing between the side edges of the roof structures close to the conductive parts is a third spacing; the third spacing is greater than or equal to the first spacing.

[0020] In the plane direction parallel to the pixel definition layer, the oblique included angle between the side edges of the sub-pixels close to the side walls is less than 15 degrees.

[0021] The sub-pixel is a rectangle, the extension direction of the wide side of the rectangle is arranged in parallel to the long side direction of the evaporation source, and the extension direction of the long side of the rectangle is arranged in parallel to the displacement direction of the evaporation source.

[0022] The sub-pixel is a rectangle, the extension direction of the wide side of the rectangle is arranged in parallel to the long side direction of the evaporation source, and the extension direction of the long side of the rectangle is arranged in parallel to the displacement direction of the evaporation source.

[0023] The inner side wall of the first side wall extends along the displacement direction of the evaporation source; in the plane direction parallel to the pixel definition layer, the side edges of the sub-pixels close to the first side wall are arranged in parallel to each other, and the side edges of the sub-pixels close to the second side wall are obliquely arranged.

[0024] Or,

[0025] In the plane direction parallel to the pixel definition layer, the side edges of the sub-pixels close to the side walls are obliquely arranged.

[0026] To solve the above technical problems, the second technical solution provided by the present application is a display device, which comprises a mainboard and the display panel.

[0027] The beneficial effects of the present application: Different from the prior art, the present application provides a display panel and a display device. The pixel definition layer has a plurality of pixel openings. Each sub-pixel unit includes a sub-pixel and an isolation structure. The sub-pixel is arranged in the pixel opening. The light-emitting layer and the cathode of the sub-pixel are sequentially deposited in the pixel opening by a deposition source. The isolation structure is arranged protruding from the pixel definition layer and surrounds the pixel opening. The side wall of the isolation structure includes a conductive part and a gable structure shielding the conductive part. In the plane direction parallel to the conductive part, the gable structure extends beyond the conductive part. The conductive part is electrically connected to the sub-pixel. The side wall includes a first side wall and a second side wall. The inner side wall of the first side wall is arranged extending in the displacement direction of the deposition source. In the first side wall, the distance between the side edges of the gable structure and the conductive part close to each other is a first distance. In the second side wall, the distance between the side edges of the gable structure and the conductive part close to each other is a second distance. In a single sub-pixel unit, the second distance is greater than the first distance. Or, in the plane direction parallel to the pixel definition layer, the side edge of the sub-pixel arranged extending in the long edge direction of the deposition source is arranged inclined to the side edge of the side wall close to each other. By making the second distance greater than the first distance, the width of the gable structure extending beyond the conductive part in the second side wall is reduced, thereby improving the conductive bonding stability of the second side wall and the sub-pixel. And the side edge of the side wall close to the sub-pixel is arranged inclined to the sub-pixel, so as to improve the conductive bonding stability of the side wall and the sub-pixel. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative labor.

[0029] Figure 1 is a structure diagram of the deposition source and the limiting plate in the prior art;

[0030] Figure 2 is a structure diagram of an embodiment of the display panel provided by the present application;

[0031] Figure 3 is a structure diagram of a first embodiment of the repeating unit provided by the present application;

[0032] Figure 4 is a structure diagram of a first embodiment of the sub-pixel unit provided by the present application;

[0033] Figure 5 is Figure 3 is a cross-sectional structural schematic view at A-A and B-B in FIG. 1;

[0034] Figure 6 is a structural schematic view of a second embodiment of a repeating unit provided in the present application;

[0035] Figure 7 is a structural schematic view of a second embodiment of a sub-pixel unit provided in the present application;

[0036] Figure 8 is a structural schematic view of a third embodiment of a repeating unit provided in the present application;

[0037] Figure 9 is a structural schematic view of a fourth embodiment of a repeating unit provided in the present application;

[0038] Figure 10 is a structural schematic view of a third embodiment of a sub-pixel unit provided in the present application;

[0039] Figure 11 is a structural schematic view of a fifth embodiment of a repeating unit provided in the present application;

[0040] Figure 12 is a structural schematic view of a fourth embodiment of a sub-pixel unit provided in the present application;

[0041] Figure 13 is a structural schematic view of an embodiment of a display device provided in the present application.

[0042] BRIEF DESCRIPTION OF DRAWINGS

[0043] 100, display panel; 10, pixel definition layer; 11, pixel opening; 20, sub-pixel unit; 21, sub-pixel; 211, anode; 212, light-emitting layer; 213, cathode; 22, isolation structure; 220, side wall; 2200, inner side wall; 221, first side wall; 222, second side wall; 223, inclined side wall; 22A, conductive part; 22B, gable structure; 30, repeating unit; 40, planar layer; 50, driving substrate; d1, first distance; d2, second distance; d3, third distance; d, preset distance; θ, inclination angle; a, angle; X, displacement direction; Y, long direction; φ1 / φ2, evaporation angle; 200, main plate; 300, display device; 400, limiting plate; 500, evaporation source. DETAILED DESCRIPTION

[0044] The scheme of the embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0045] In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular architectures, interfaces, techniques, etc. in order to provide a thorough understanding of the application.

[0046] The technical solutions in the embodiments of the present application will be described clearly and completely in the following description in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0047] The terms "first", "second", "third" in the present application are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second", "third" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise specifically limited. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present application are only used to explain the relative positional relationship, movement condition, etc. between the components in a certain posture (as shown in the drawings), and if the certain posture changes, the directional indications also change accordingly. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units is not limited to the listed steps or units, but can optionally include steps or units not listed, or can optionally include other steps or units inherent to the process, method, product or device.

[0048] In this document, reference to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are they necessarily mutually exclusive or alternative embodiments. It is explicitly contemplated that embodiments described herein can be combined with each other.

[0049] Please refer to Figure 1 , Figure 1 is a schematic view of the structure of an existing evaporation source and a limiting plate.

[0050] In actual vapor deposition processes, since the vapor deposition source 500 forms a vapor deposition cloud along its long side direction Y, the vapor deposition angle φ1 of the vapor deposition material cannot be controlled in this direction. However, in the displacement direction X (i.e., the scanning direction of the vapor deposition source 500), the vapor deposition angle φ2 can be controlled using the limiting plates 400 on both sides. Therefore, due to the setting of the limiting plates 400 above the vapor deposition source 500, the vapor deposition angle φ2 of the vapor deposition material in the displacement direction X of the vapor deposition source 500 is smaller than the vapor deposition angle φ1 of the same vapor deposition material in the long side direction Y of the vapor deposition source 500. The larger the vapor deposition angle, the easier it is for the vapor deposition material to bond with the conductive part (…). Figure 1 (Not shown) overlap. That is, compared to the cathode formed by vapor deposition material ( Figure 1 (Not shown) Along the long side direction Y of the vapor deposition source 500, the cathode is more likely to overlap with the conductive part along the displacement direction X of the vapor deposition source 500.

[0051] Please see Figures 1 to 5 , Figure 2 This is a schematic diagram of the structure of an embodiment of the display panel provided in this application. Figure 3 This is a schematic diagram of the structure of the first embodiment of the repeating unit provided in this application. Figure 4 This is a schematic diagram of the structure of the first embodiment of the sub-pixel unit provided in this application. Figure 5 yes Figure 3 Schematic diagram of the cross-sectional structure at points AA and BB.

[0052] Based on the above principle, the application provides a display panel 100. The display panel 100 comprises a pixel definition layer 10 and a sub-pixel unit 20. The pixel definition layer 10 has a plurality of pixel openings 11. Each sub-pixel unit 20 comprises a sub-pixel 21 and an isolation structure 22. The sub-pixel 21 is arranged in the pixel opening 11. The light-emitting layer 212 and the cathode 213 of the sub-pixel 21 are sequentially evaporated in the pixel opening 11 by an evaporation source 500. The isolation structure 22 is arranged protruding from the pixel definition layer 10 and surrounds the pixel opening 11. The side wall 220 of the isolation structure 22 comprises a conductive part 22A and a gable structure 22B shielding the conductive part 22A. In the direction parallel to the plane of the conductive part 22A, the gable structure 22B extends out of the conductive part 22A. The conductive part 22A is electrically connected with the sub-pixel 21. The side wall 220 comprises a first side wall 221 and a second side wall 222. Among them, the inner side wall 2200 of the first side wall 221 is arranged extending in the displacement direction X of the evaporation source 500. In the first side wall 221, the distance between the side edges of the gable structure 22B and the conductive part 22A close to each other is the first distance d1. In the second side wall 222, the distance between the side edges of the gable structure 22B and the conductive part 22A close to each other is the second distance d2. In a single sub-pixel unit 20, the second distance d2 is greater than the first distance d1. In the direction parallel to the plane of the pixel definition layer 10, the side edge of the sub-pixel 21 arranged extending in the long edge direction Y of the evaporation source 500 is arranged obliquely to the side edge of the side wall 220 close to each other.

[0053] By making the second distance d2 greater than the first distance d1, while ensuring good conductive lap stability of the first side wall 221 and the sub-pixel 21, the width of the gable structure 22B extending out of the conductive part 22A in the second side wall 222 is reduced, thereby improving the conductive lap stability of the second side wall 222 and the sub-pixel 21. And the side edge of the side wall 220 close to the sub-pixel 21 is arranged obliquely to the sub-pixel 21, so as to improve the conductive lap stability of the side wall 220 and the sub-pixel 21.

[0054] The display panel further comprises a flat layer 40 and a driving substrate 50, the flat layer 40 is located on the side of the pixel definition layer 10 away from the isolation structure 22, and the driving substrate 50 is located on the side of the flat layer 40 away from the pixel definition layer 10. The driving substrate 50 is used to drive the sub-pixel 21 to emit light.

[0055] The pixel definition layer 10 is used to define the position of the sub-pixel 21. The plurality of pixel openings 11 are arranged at intervals.

[0056] In a single sub-pixel unit 20, and in the direction parallel to the pixel definition layer 10, the distance between the side edges of the sub-pixel 21 and the conductive part 22A close to each other is equal, which can be understood as that in a single sub-pixel unit 20, the distance between each side edge of the sub-pixel 21 and the side edge of the corresponding conductive part 22A is the same.

[0057] It should be noted that the effective light-emitting area of the sub-pixel 21 is the area of the anode 211 of the sub-pixel 21 exposed to the pixel opening 11. That is, the effective light-emitting area of the sub-pixel 21 is the area of the end of the pixel opening 11 away from the isolation structure 22.

[0058] In the direction parallel to the pixel definition layer 10, the distance between the side edges of the sub-pixel 21 and the conductive part 22A is the preset distance d, and in the single sub-pixel unit 20, the distance between the edge of the end of the pixel opening 11 away from the isolation structure 22 and the edge of the conductive part 22A adjacent to each other is the preset distance d.

[0059] Each sub-pixel unit 20 includes a sub-pixel 21 and an isolation structure 22 surrounding the sub-pixel 21. The sub-pixel 21 and the isolation structure 22 are arranged one by one. One isolation structure 22 surrounds one sub-pixel 21.

[0060] The sub-pixel 21 includes an anode 211, a light-emitting layer 212, and a cathode 213 arranged in sequence. The light-emitting layer 212 and the cathode 213 are sequentially evaporated on the upper surface of the anode 211 by the evaporation source 500.

[0061] In this embodiment, the sub-pixel 21 is an OLED (Organic Light-Emitting Diode).

[0062] The isolation structure 22 is used to isolate the sub-pixel 21 to avoid the problem of pixel crosstalk. The conductive part 22A of the isolation structure 22 is electrically connected to the cathode 213 of the sub-pixel 21, so that the cathodes 213 of the sub-pixels 21 are electrically connected through the isolation structure 22, which is beneficial to the uniformity of the cathode 213.

[0063] The eave structure 22B is arranged on the side surface of the conductive part 22A away from the pixel definition layer 10. The orthographic projection of the eave structure 22B on the pixel definition layer 10 covers the orthographic projection of the conductive part 22A on the pixel definition layer 10, and the projection area of the eave structure 22B on the pixel definition layer 10 is greater than the projection area of the conductive part 22A on the pixel definition layer 10. The eave structure 22B is used to adjust the evaporation angle.

[0064] In the direction perpendicular to the pixel definition layer 10, the cross section of the conductive part 22A is a right trapezoid; the width of the cross section of the conductive part 22A near the eave structure 22B is less than the width of the cross section of the conductive part 22A away from the eave structure 22B.

[0065] Here, the materials of the eave structure 22B and the conductive part 22A are not limited and can be selected according to actual needs.

[0066] The isolation structure 22 is a ring structure. The ring structure can be a closed ring structure or an unclosed ring structure. In this embodiment, the ring structure is mainly taken as an example of a closed ring structure.

[0067] It should be noted that the first side wall 221 and the second side wall 222 in each sub-pixel unit 20 in the embodiment of the present application are defined according to the extension direction of the inner side wall 2200 of the side wall 220. In each sub-pixel unit 20, the first side wall 221 and the second side wall 222 can be multiple. The inner side wall 2200 of the side wall 220 refers to the side of the side wall 220 facing the enclosed sub-pixel 21.

[0068] In the direction parallel to the plane of the pixel definition layer 10, the side edges of the eave structure 22B and the conductive part 22A close to each other in the same side wall 220 are arranged parallel to each other. The spacing between the side edges of the eave structure 22B and the conductive part 22A close to each other is a preset value, which is greater than or equal to 0.3 microns and less than or equal to 1.2 microns, so as to ensure that the conductive part 22A can be overlapped with the sub-pixel 21 and does not excessively occupy the space between the sub-pixels 21.

[0069] In different sub-pixel units 20, the spacing between the side edges of the sub-pixel 21 and the conductive part 22A close to each other in the direction parallel to the pixel definition layer 10 can be the same or different, which is not limited here and can be selected according to actual needs. It can be understood that in a sub-pixel unit 20, the spacing between the side edges of the sub-pixel 21 and the conductive part 22A close to each other in the direction parallel to the pixel definition layer 10 is a first value. In another sub-pixel unit 20, the spacing between the side edges of the sub-pixel 21 and the conductive part 22A close to each other in the direction parallel to the pixel definition layer 10 is a second value. The first value and the second value can be the same or different, which is not limited here and can be selected according to actual needs.

[0070] In this embodiment, in the direction parallel to the plane of the pixel definition layer 10, the side edges of the sub-pixel 21 and the side wall 220 close to each other are arranged parallel to each other. The inner side wall 2200 of the second side wall 222 extends in the long edge direction Y of the evaporation source 500.

[0071] The first spacing d1 is greater than or equal to 0.3 microns and less than or equal to 1.2 microns. The second spacing d2 is greater than or equal to 0.3 microns and less than or equal to 1.2 microns.

[0072] The difference between the second distance d2 and the first distance d1 is less than or equal to 0.3 microns. It can be understood that, compared with the second side wall 222 extending along the long side direction Y of the evaporation source 500, the first side wall 221 extending along the displacement direction X of the evaporation source 500 has a better conductive lapping effect with the cathode 213 of the sub-pixel 21. In the case of ensuring that the first side wall 221 is well lapped with the sub-pixel 21, by reducing the distance between the side edges of the eave structure 22B and the conductive part 22A of the second side wall 222, that is, reducing the width of the eave structure 22B extending out of the conductive part 22A, the cathode 213 is more easily lapped with the conductive part 22A of the second side wall 222, so that the cathode 213 of the sub-pixel 21 can be well lapped with the conductive part 22A of each side wall 220 of the isolation structure 22, thereby improving the conductive lapping stability of the cathode 213 of the sub-pixel 21 and the conductive part 22A of the isolation structure 22.

[0073] In a specific embodiment, the second distance d2 can be 0.6 microns to 1.2 microns, and the first distance d1 can be 0.3 microns to 0.7 microns.

[0074] It should be noted that the preset value, the first distance d1 and the second distance d2 of the present application all refer to the actual values, that is, the distance between the side edges of the eave structure 22B and the conductive part 22A after the isolation structure 22 is prepared.

[0075] The sub-pixel 21 is rectangular. The isolation structure 22 is a rectangular ring structure. Here, the arrangement of the sub-pixel 21 is not limited, and can be selected according to actual needs.

[0076] In the present embodiment, the display panel 100 includes sub-pixels 21 of three different colors, and each sub-pixel unit 20 includes sub-pixels 21 of one color. The three sub-pixel units 20 of different colors combine to form a rectangular repeating unit 30. Here, the arrangement of the repeating unit 30 is not limited, and can be selected according to actual needs. Two of the three sub-pixel units 20 of different colors are located on the same side of the other sub-pixel unit 20 of different colors.

[0077] In a direction perpendicular to the pixel definition layer 10, the side wall 220 of the isolation structure 22 in a sub-pixel unit 20 is partially overlapped with the side wall 220 of the isolation structure 22 in an adjacent sub-pixel unit 20.

[0078] It should be understood that, in other embodiments, the sub-pixel unit 20 can also have other arrangements. The sub-pixel unit 20 in the repeating unit 30 can also have other arrangements.

[0079] Please refer to Figure 2 ,Figure 4 、 Figures 6 to 8 , Figure 6 is a structural schematic diagram of a second embodiment of a repeating unit provided in the present application, Figure 7 is a structural schematic diagram of a second embodiment of a sub-pixel unit provided in the present application, Figure 8 is a structural schematic diagram of a third embodiment of a repeating unit provided in the present application.

[0080] The second embodiment of the repeating unit 30 provided in the present application is basically similar in structure to the first embodiment of the repeating unit 30 provided in the present application, and the difference lies in that the side wall 220 further comprises an inclined side wall 223, the extension direction of the inner side wall 2200 of the inclined side wall 223 is arranged to intersect the long side direction Y of the evaporation source 500 and the displacement direction X of the evaporation source 500.

[0081] In the present embodiment, the side wall 220 comprises a first side wall 221, a second side wall 222 and an inclined side wall 223. The difference between the second interval d2 and the first interval d1 is less than 3 microns.

[0082] It should be noted that the first side wall 221, the second side wall 222 and the inclined side wall 223 are defined according to the extension direction of the inner side wall 2200 of the side wall 220.

[0083] In the inclined side wall 223, the interval between the side edges of the eave structure 22B and the conductive part 22A close to each other is a third interval d3. The third interval d3 is greater than or equal to the first interval d1.

[0084] One end of the inclined side wall 223 is connected to the first side wall 221, and the other end of the inclined side wall 223 is connected to the second side wall 222.

[0085] The inner side wall 2200 of the first side wall 221 in the present embodiment is arranged to extend along the displacement direction X of the evaporation source 500, and the inner side wall 2200 of the second side wall 222 is arranged to extend along the long side direction Y of the evaporation source 500. The inclined side wall 223 can be at least one. When the inclined side wall 223 is multiple, the inner side walls 2200 of different inclined side walls 223 have different extension directions. Among different inclined side walls 223, each third interval d3 can be the same or different.

[0086] The included angle a between the extension direction of the inner side wall 2200 of the inclined side wall 223 and the long side direction Y of the evaporation source 500 is greater than 5 degrees and less than 20 degrees. That is, 5 degrees < a < 20 degrees. The included angle a is designed to avoid the area of the pixel opening 11 surrounded by the isolation structure 22 from being reduced due to the arrangement of the inclined side wall 223 as much as possible, so as to ensure that the cathode 213 of the sub-pixel 21 can be in good conductive lap joint with the conductive part 22A of the inclined side wall 223 while ensuring that the area of the pixel opening 11 changes little.

[0087] The extending direction of the inner sidewall 2200 of the inclined sidewall 223 is neither perpendicular to the long side direction Y of the evaporation source 500 nor perpendicular to the displacement direction X of the evaporation source 500, so as to adjust the evaporation angle when the evaporation cathode 213 is adjusted, so that the cathode 213 can be electrically connected with at least part of the conductive part 22A of the inclined sidewall 223, and the cathode 213 of the sub-pixel 21 can be electrically connected with the conductive part 22A of each sidewall 220 of the isolation structure 22, thereby improving the electrical connection stability of the cathode 213 and the conductive part 22A. It can be understood that the electrical connection stability of the cathode 213 of the sub-pixel 21 and the inclined sidewall 223 is less than that of the cathode 213 of the sub-pixel 21 and the first sidewall 221, but better than that of the cathode 213 of the sub-pixel 21 and the second sidewall 222.

[0088] The sub-pixel 21 is a polygon. A plurality of sub-pixel units 20 are combined to form a repeating unit 30, and the repeating unit 30 is arranged in a rectangular shape to facilitate array arrangement of the repeating unit 30. The arrangement of the sub-pixel 21 is not limited here, and can be selected according to actual needs.

[0089] Specifically, the sub-pixel 21 is an octagon. The isolation structure 22 includes two first sidewalls 221, two second sidewalls 222, and four inclined sidewalls 223. The inclined sidewall 223 is located between the first sidewall 221 and the second sidewall 222.

[0090] In other embodiments, as shown in Figure 8 , the single repeating unit 30 includes sub-pixels 21 of different shapes.

[0091] Please refer to Figure 2 , Figure 4 , Figure 9 and Figure 10 , Figure 9 is a structure schematic view of the fourth embodiment of the repeating unit provided by the present application, Figure 10 is a structure schematic view of the third embodiment of the sub-pixel unit provided by the present application.

[0092] The fourth embodiment of the repeating unit 30 provided by the present application is basically similar to the second embodiment of the repeating unit 30 provided by the present application in structure, and the difference lies in that, in the direction parallel to the plane of the pixel definition layer 10, the sides of the sub-pixel 21 and the first sidewall 221 close to each other are arranged in parallel to each other, and the sides of the sub-pixel 21 and the second sidewall 222 close to each other are arranged obliquely.

[0093] In the embodiment, the inner side wall 2200 of the first side wall 221 is arranged to extend along the displacement direction X of the evaporation source 500. The second side wall 222 is a slanted side wall 223. The extension direction of the inner side wall 2200 of the slanted side wall 223 is arranged to intersect the long side direction Y of the evaporation source 500 and the displacement direction X of the evaporation source 500. It can be understood that the isolation structure 22 includes the first side wall 221 and the slanted side wall 223.

[0094] In the plane direction parallel to the pixel definition layer 10, the oblique included angle θ between the side edges of the sub-pixel 21 and the side wall 220 close to each other is less than 15 degrees. That is, the oblique included angle θ between the side edges of the sub-pixel 21 and the second side wall 222 close to each other is less than 15 degrees. In a single sub-pixel unit 20, the oblique included angle θ between the side edges of the different second side walls and the sub-pixel 21 close to each other can be the same or different, which is not limited here and can be selected according to actual needs.

[0095] The sub-pixel 21 is rectangular, the extension direction of the wide edge of the rectangle is arranged to be parallel to the long side direction Y of the evaporation source 500, and the extension direction of the long edge of the rectangle is arranged to be parallel to the displacement direction X of the evaporation source 500.

[0096] The isolation structure 22 is arranged to tilt the inner side wall 2200 of the second side wall 222 relative to the side edge of the sub-pixel 21 on the basis of retaining the first side wall 221, so as to improve the stable conductivity jointing of the second side wall 222 and the cathode 213 of the sub-pixel 21.

[0097] Please refer to Figure 2 , Figure 4 , Figure 11 and Figure 12 , Figure 11 is a structural schematic diagram of the fifth embodiment of the repeating unit provided in the application, Figure 12 is a structural schematic diagram of the fourth embodiment of the sub-pixel unit provided in the application.

[0098] The fifth embodiment of the repeating unit 30 provided in the application is basically similar to the second embodiment of the repeating unit 30 provided in the application in structure, and the difference lies in that the side edges of the sub-pixel 21 and the side wall 220 close to each other are arranged to be oblique in the plane direction parallel to the pixel definition layer 10.

[0099] In the embodiment, the first side wall 221 and the second side wall 222 are both slanted side walls 223. The extension direction of the inner side wall 2200 of the slanted side wall 223 is arranged to intersect the long side direction Y of the evaporation source 500 and the displacement direction X of the evaporation source 500.

[0100] In the plane direction parallel to the pixel definition layer 10, the included angle θ between the side edges of the sub-pixel 21 and the side walls 220 close to each other is less than 15 degrees. That is, in the plane direction parallel to the pixel definition layer 10, the included angle θ between the side edges of the sub-pixel 21 and the first side wall 221 close to each other is less than 15 degrees, and the included angle θ between the side edges of the sub-pixel 21 and the second side wall 222 close to each other is less than 15 degrees.

[0101] The included angle θ between the side edges of the sub-pixel 21 and the side walls 220 close to each other in different sub-pixel units 20 can be the same or different, which is not limited here and can be selected according to actual needs. In a single sub-pixel unit 20, the included angle θ between the side edges of the different side walls 220 and the sub-pixel 21 close to each other can be the same or different.

[0102] The sub-pixel 21 is rectangular, the extension direction of the wide side of the rectangle is parallel to the long side direction Y of the evaporation source 500, and the extension direction of the long side of the rectangle is parallel to the displacement direction X of the evaporation source 500.

[0103] The side edges of the sub-pixel 21 correspond to two side walls 220 of the isolation structure 22, the end portions close to each other and connected of the two side walls 220 are close to the sub-pixel 21, and the end portions away from each other of the two side walls 220 are away from the sub-pixel 21.

[0104] It should be understood that in other embodiments, the side edges of the sub-pixel 21 can correspond to one side wall 220 of the isolation structure 22.

[0105] Please refer to Figure 13 , Figure 13 is a structural schematic diagram of an embodiment of the display device provided in the present application.

[0106] The present application provides a display device 300. The display device 300 comprises a main board 200 and the display panel 100 described above.

[0107] The main board 200 is electrically connected with the display panel 100, and the main board 200 is used to transmit various required signals to the display panel 100 to control the display panel 100 to display a picture. For example, a clock signal (CK) required for driving the display panel to display, a common voltage signal (Vss), a power voltage signal (VDD) and a data signal (Data) and the like.

[0108] In the above embodiments, the description of each embodiment is focused on, and the parts not described in detail in a certain embodiment can be referred to the related description of other embodiments.

[0109] The above merely describes the embodiments of the present application, and does not limit the patent protection scope of the present application. Any equivalent structure or equivalent process transformation, or direct or indirect application in other related technical fields, which is made by using the content of the present application specification and drawings, is also included in the patent protection scope of the present application.

Claims

1. A display panel, characterized by, include: A pixel definition layer with multiple pixel openings; Sub-pixel units, each of the sub-pixel units comprising: A sub-pixel is disposed in the pixel opening; the light-emitting layer and the cathode of the sub-pixel are sequentially deposited on the pixel opening through a evaporation source; An isolation structure protrudes from the pixel definition layer and surrounds the pixel opening; the sidewall of the isolation structure includes a conductive portion and an eaves structure that shields the conductive portion; the eaves structure extends out of the conductive portion in a plane direction parallel to the conductive portion; the conductive portion is electrically connected to the sub-pixel; the sidewall includes a first sidewall and a second sidewall. in, The inner sidewall of the first sidewall extends along the displacement direction of the vapor deposition source; in the first sidewall, the distance between the eaves structure and the side of the conductive part that are close to each other is a first distance; in the second sidewall, the distance between the eaves structure and the side of the conductive part that are close to each other is a second distance; within a single sub-pixel unit, the second distance is greater than the first distance.

2. The display panel of claim 1, wherein, In a plane direction parallel to the pixel definition layer, the eaves structure and the conductive part in the same sidewall are arranged parallel to each other on their adjacent sides; the distance between the eaves structure and the adjacent sides of the conductive part is a preset value, which is greater than or equal to 0.3 micrometers and less than or equal to 1.2 micrometers.

3. The display panel of claim 1, wherein, The difference between the second spacing and the first spacing is less than or equal to 0.3 micrometers; in the plane direction parallel to the pixel definition layer, the side of the sub-pixel extending along the long side of the evaporation source is inclined between the side of the sidewall that is close to each other.

4. The display panel of claim 2, wherein, In a plane direction parallel to the pixel definition layer, the sub-pixels and the sidewalls that are close to each other are arranged parallel to each other; the inner sidewall of the second sidewall extends along the long side of the vapor deposition source.

5. The display panel of claim 4, wherein, The sidewall also includes an inclined sidewall, the extension direction of the inner sidewall of the inclined sidewall intersects with the long side direction of the vapor deposition source and also intersects with the displacement direction of the vapor deposition source.

6. The display panel of claim 5, wherein, The angle between the extending direction of the inner sidewall of the inclined sidewall and the long side direction of the vapor deposition source is greater than 5 degrees and less than 20 degrees.

7. The display panel of claim 6, wherein, In the inclined sidewall, the distance between the eaves structure and the side of the conductive part that are close to each other is the third distance; the third distance is greater than or equal to the first distance.

8. The display panel of claim 1, wherein, In a plane direction parallel to the pixel definition layer, the angle of inclination between the sub-pixel and the sidewall that is close to each other is less than 15 degrees.

9. The display panel of claim 8, wherein, The sub-pixel is a rectangle, the extension direction of the wide side of the rectangle is parallel to the long side of the evaporation source, and the extension direction of the long side of the rectangle is parallel to the displacement direction of the evaporation source. The inner sidewall of the first sidewall extends along the displacement direction of the vapor deposition source; Wherein, in the plane direction parallel to the pixel definition layer, the sub-pixel and the side of the first sidewall that are close to each other are arranged parallel to each other, and the sub-pixel and the side of the second sidewall that are close to each other are arranged at an angle; or, In a direction parallel to a plane of the pixel definition layer, the sub-pixels are obliquely arranged between sides of the sub-pixels close to the first side wall and between sides of the sub-pixels close to the second side wall.

10. A display device, characterized by comprising: The display panel comprises a main board and the display panel according to any one of claims 1 to 9.

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