OLED (Organic Light Emitting Diode) display panel, preparation method thereof and display device

Abstract

The invention provides an OLED display panel, a preparation method thereof and a display device, the OLED display panel comprises a light-emitting substrate, a thin film transistor array layer and a photoelectric conversion layer, the light-emitting substrate comprises a plurality of light-emitting units, and each light-emitting unit comprises an anode layer, a light-emitting layer and a cathode layer; the thin film transistor array layer is arranged on the light-emitting substrate, the thin film transistor array layer comprises a plurality of thin film transistors, each thin film transistor comprises an active layer, a source electrode, a drain electrode and a grid electrode, the source electrode and the drain electrode are arranged on the active layer, and the drain electrode is electrically connected with the anode layer; the photoelectric conversion layer is arranged on the light emitting side of the light emitting substrate, the photoelectric conversion layer comprises a first photosensitive area and a second photosensitive area, the second photosensitive area is electrically connected with the cathode layer, and the first photosensitive area is electrically connected with the grid electrode; wherein the first photosensitive area and the second photosensitive area can convert light energy into electric signals under the action of external light. And the display effect of the OLED display panel is improved.

Description

Technical Field

[0001] The present application belongs to the field of display technology, and more specifically, relates to an OLED display panel and a preparation method thereof, and a display device. Background Art

[0002] When using a mobile phone or other display device with an organic light-emitting diode (OLED) display panel under bright sunlight, the brightness of the OLED display panel will increase, so that the perceived contrast can be maintained and the user can view the content comfortably. However, when the OLED display panel is exposed to local strong light, the overall brightness can only be increased when the brightness is manually adjusted so that the user can clearly see the display screen of the OLED display panel. However, this not only wastes power consumption, but also under local strong light, the overall brightness increase of the OLED display panel will cause uneven brightness display in the user's perception, thereby reducing the user experience.

[0003] As people continue to pursue the display effects of display panels, how to make OLED display panels have better display effects under strong light has become the focus and difficulty of the industry. Summary of the invention

[0004] The embodiments of the present application provide an OLED display panel and a preparation method thereof, and a display device. A photoelectric conversion layer is arranged on the light-emitting side of a light-emitting substrate. The first photosensitive area in the photoelectric conversion layer is electrically connected to the anode layer of the corresponding light-emitting unit through a thin-film transistor, and the second photosensitive area is electrically connected to the cathode layer. An additional voltage signal is provided to the anode layer and the cathode layer in the corresponding light-emitting unit, so that the brightness of the corresponding light-emitting layer is improved, thereby achieving the purpose of improving the display effect of the OLED display panel.

[0005] In a first aspect, the present application provides an OLED display panel, comprising a light-emitting substrate, a thin film transistor array layer and a photoelectric conversion layer, wherein the light-emitting substrate comprises a plurality of light-emitting units, and the light-emitting units comprise an anode layer, a light-emitting layer and a cathode layer; the thin film transistor array layer is arranged on the light-emitting substrate, and the thin film transistor array layer comprises a plurality of thin film transistors, and the thin film transistors comprise an active layer, a source and a drain arranged on the active layer, and a gate, and the drain is electrically connected to the anode layer; the photoelectric conversion layer is arranged on the light-emitting side of the light-emitting substrate, and the photoelectric conversion layer comprises a first photosensitive area and a second photosensitive area, the second photosensitive area is electrically connected to the cathode layer, and the first photosensitive area is electrically connected to the gate; wherein the first photosensitive area and the second photosensitive area can convert light energy into electrical signals under the action of external light.

[0006] In some embodiments, the photoelectric conversion layer is disposed on a side of the thin film transistor array layer away from the light emitting substrate.

[0007] In some embodiments, the photoelectric conversion layer includes a glass substrate and multiple photosensitive portions and a first insulating layer arranged on the glass substrate, the photosensitive portion includes the first photosensitive area and the second photosensitive area, and the first insulating layer is provided with a first conductive via connecting the gate and the first photosensitive area.

[0008] In some embodiments, along the thickness direction of the OLED display panel, the orthographic projections of the photosensitive portion and the thin film transistor on the light-emitting substrate are located between two adjacent light-emitting units.

[0009] In some embodiments, the number of the photosensitive portions is equal to the number of the light emitting units, and a plurality of the photosensitive portions corresponds one-to-one to a plurality of the light emitting units.

[0010] In some embodiments, the number of the thin film transistors is equal to the number of the light emitting units, and a plurality of the thin film transistors corresponds one-to-one to a plurality of the light emitting units.

[0011] In some embodiments, a second insulating layer is provided between the thin film transistor and the anode layer, and a second conductive via connecting the anode layer and the drain is opened on the second insulating layer; there are multiple second conductive vias, and the multiple second conductive vias correspond one-to-one to the multiple anode layers, and the multiple anode layers correspond one-to-one to the multiple photosensitive portions; along the thickness direction of the OLED display panel, the orthographic projection of the second conductive via on the light-emitting substrate is located on one side of the first corner of the anode layer, and the orthographic projection of the photosensitive portion on the light-emitting substrate is located on the other side of the first corner.

[0012] In some embodiments, a plurality of the anode layers are arranged in an array, the cathode layers in the same row or column are connected to strip-shaped cathode strips, the second photosensitive areas are strip-shaped, and the second photosensitive areas are arranged in the same direction as the cathode strips.

[0013] In some embodiments, the number of the cathode strips is the same as the number of the second photosensitive areas, and the cathode strips are connected to the second photosensitive areas in a one-to-one correspondence.

[0014] The beneficial effect of the OLED display panel provided by the present application is that, compared with the prior art, the OLED display panel provided by the present application, by setting a photoelectric conversion layer on the light-emitting side of the light-emitting substrate, the photoelectric conversion layer includes a first photosensitive area and a second photosensitive area corresponding to the light-emitting unit, the first photosensitive area in the photoelectric conversion layer is electrically connected to the gate of the thin film transistor, and the drain of the thin film transistor is electrically connected to the anode of the light-emitting unit, that is, the first photosensitive area is electrically connected to the anode layer of the corresponding light-emitting unit through the thin film transistor, and the second photosensitive area is electrically connected to the cathode layer. When the OLED display panel is used under sufficient external light, since the first photosensitive area and the second photosensitive area can convert light energy into electrical signals under the action of external light, additional voltage signals are provided for the anode layer and the cathode layer in the corresponding light-emitting unit, thereby increasing the number of holes in the anode layer and electrons in the cathode layer, so that the brightness of the corresponding light-emitting layer is improved, which is beneficial to improving the display effect of the OLED display panel.

[0015] In a second aspect, the present application further provides a method for preparing an OLED display panel, which is used to prepare the OLED display panel described in the first aspect, and the preparation method comprises:

[0016] Plating a photosensitive material on a glass substrate to form a first photosensitive area and a second photosensitive area;

[0017] Coating a first insulating layer on the glass substrate to cover the first photosensitive area and the second photosensitive area, opening a first via hole in the first insulating layer to communicate with the first photosensitive area, and filling a conductive medium in the first via hole to form a first conductive via hole;

[0018] A thin film transistor array layer is provided on the first insulating layer, the gate of the thin film transistor is connected to the first conductive via, and the first photosensitive area is electrically connected to the gate;

[0019] A second insulating layer is provided on the thin film transistor array layer, a second via hole connected to the drain electrode of the thin film transistor is provided on the second insulating layer, and a conductive medium is filled in the second via hole to form a second conductive via hole;

[0020] An anode layer, a light-emitting layer and a cathode layer are sequentially stacked on the second insulating layer, the anode layer is connected to the second conductive via, and the cathode layer is electrically connected to the second photosensitive area.

[0021] The beneficial effect of the preparation method of the OLED display panel provided in the present application is that: by arranging a photoelectric conversion layer on the light-emitting side of the light-emitting substrate, the photoelectric conversion layer includes a first photosensitive area and a second photosensitive area corresponding to the light-emitting unit, the first photosensitive area in the photoelectric conversion layer is electrically connected to the gate of the thin film transistor, and the drain of the thin film transistor is electrically connected to the anode of the light-emitting unit, that is, the first photosensitive area is electrically connected to the anode layer of the corresponding light-emitting unit through the thin film transistor, and the second photosensitive area is electrically connected to the cathode layer. When the OLED display panel is used under sufficient external light, since the first photosensitive area and the second photosensitive area can convert light energy into electrical signals under the action of external light, additional voltage signals are provided for the anode layer and the cathode layer in the corresponding light-emitting unit, thereby increasing the number of holes in the anode layer and electrons in the cathode layer, so that the brightness of the corresponding light-emitting layer is improved, which is beneficial to improving the display effect of the OLED display panel.

[0022] In a third aspect, the present application further provides a display device, comprising a housing and the OLED display panel according to the first aspect arranged on the housing.

[0023] The display device provided by the present application has the beneficial effect that: by arranging a photoelectric conversion layer on the light-emitting side of the light-emitting substrate, the photoelectric conversion layer includes a first photosensitive area and a second photosensitive area corresponding to the light-emitting unit, the first photosensitive area in the photoelectric conversion layer is electrically connected to the gate of the thin film transistor, and the drain of the thin film transistor is electrically connected to the anode of the light-emitting unit, that is, the first photosensitive area is electrically connected to the anode layer of the corresponding light-emitting unit through the thin film transistor, and the second photosensitive area is electrically connected to the cathode layer. When the OLED display panel is used under sufficient external light, since the first photosensitive area and the second photosensitive area can convert light energy into electrical signals under the action of external light, additional voltage signals are provided for the anode layer and the cathode layer in the corresponding light-emitting unit, thereby increasing the number of holes in the anode layer and electrons in the cathode layer, so that the brightness of the corresponding light-emitting layer is improved, which is beneficial to improving the display effect of the display device. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0025] Figure 1 A schematic diagram of an OLED display panel provided in Example 1 of the present application;

[0026] Figure 2 A schematic diagram of the structure of the circuit connection of the OLED display panel provided in some embodiments of the present application;

[0027] Figure 3 for Figure 1 Schematic diagram of connection between the light emitting unit and the thin film transistor;

[0028] Figure 4 A flow chart of a method for preparing an OLED display panel provided in some embodiments of the present application;

[0029] Figure 5 This is a schematic diagram of the structure of the OLED display device provided in Example 2 of the present application.

[0030] Among them, the reference numerals in the figure are:

[0031] 100. OLED display panel; 200. housing;

[0032] 1. Light-emitting layer; 2. Anode layer; 3. Cathode layer; 4. Electron injection layer; 5. Electron transport layer; 6. Hole transport layer; 7. Hole injection layer; 10. Light-emitting matrix; 101. Light-emitting unit;

[0033] 20, thin film transistor array layer; 201, thin film transistor; 21, active layer; 22, drain electrode; 23, source electrode; 24, gate electrode; 25, third insulating layer;

[0034] 30, photoelectric conversion layer; 301, first photosensitive area; 302, second photosensitive area; 31, glass substrate; 32, photosensitive part; 33, first insulating layer; 330, first conductive via;

[0035] 40. a second insulating layer; 41. a second conductive via;

[0036] 51. Signal line; 52. Data line. DETAILED DESCRIPTION

[0037] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0038] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0039] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0040] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0041] Embodiment 1

[0042] like Figures 1 to 3 As shown, the present application provides an OLED display panel 100, including a light-emitting substrate 10, a thin film transistor array layer 20 and a photoelectric conversion layer 30, the light-emitting substrate 10 includes a plurality of light-emitting units 101, the light-emitting unit 101 includes an anode layer 2, a light-emitting layer 1 and a cathode layer 3; the thin film transistor array layer 20 is arranged on the light-emitting substrate 10, the thin film transistor array layer 20 includes a plurality of thin film transistors 201, the thin film transistor 201 includes an active layer 21, a source electrode 23 and a drain electrode 22 arranged on the active layer 21, and a gate electrode 24, the drain electrode 22 is electrically connected to the anode layer 2; the photoelectric conversion layer 30 is arranged on the light-emitting side of the light-emitting substrate 10, the photoelectric conversion layer 30 includes a first photosensitive area 301 and a second photosensitive area 302, the second photosensitive area 302 is electrically connected to the cathode layer 3, and the first photosensitive area 301 is electrically connected to the gate electrode 24; wherein the first photosensitive area 301 and the second photosensitive area 302 can convert light energy into electrical signals under the action of external light.

[0043] The light-emitting matrix 10 is an OLED structure. Figure 1 As shown, the light-emitting matrix 10 includes, in addition to the anode layer 2, the light-emitting layer 1 and the cathode layer 3, an electron injection layer 4 and an electron transport layer 5 arranged between the light-emitting layer 1 and the cathode layer 3, and a hole transport layer 6 and a hole injection layer 7 arranged between the light-emitting layer 1 and the anode layer 2.

[0044] The display principle of the above-mentioned OLED display panel 100 is to use two layers of ITO transparent electrodes as the anode layer 2 (Anode) and the cathode layer 3 (Cathode) of the OLED structure respectively. Under a certain voltage drive, electrons and holes are respectively injected from the cathode layer 3 and the anode layer 2 into the electron transport layer 5 (Electron Transport Layer, ETL) and the hole transport layer 6 (Hole Transport Layer, HTL) and then migrate to the emission layer 1 (Emission Layer, EML). After meeting, excitons are formed to excite the luminescent molecules, which emit visible light after radiation.

[0045] Generally, the light-emitting substrate 10 can emit light from both sides, that is, the light-emitting substrate 10 can emit light toward the anode layer 2 side and the cathode layer 3 side; of course, a light-shielding layer such as a reflective layer can also be provided on the cathode layer 3 to limit the emission of light, so that the light generated by the light-emitting substrate 10 is only emitted from the anode layer 2 side (such as Figure 1 The power source is emitted in the direction of the downward-pointing dotted arrow shown in the figure).

[0046] The thin film transistor array layer 20 is usually connected to the anode layer 2 and the cathode layer 3 of the light-emitting substrate 10 to provide driving voltage for the anode layer 2 and the cathode layer 3. Therefore, the thin film transistor array layer 20 is usually arranged on the side of the light-emitting substrate 10 where the anode layer 2 is arranged.

[0047] By arranging a photoelectric conversion layer 30 on the light-emitting side of the light-emitting substrate 10, the photoelectric conversion layer 30 includes a first photosensitive area 301 and a second photosensitive area 302, the first photosensitive area 301 in the photoelectric conversion layer 30 is electrically connected to the gate 24 of the thin film transistor 201, and the drain 22 of the thin film transistor 201 is electrically connected to the anode of the light-emitting unit 101, that is, the first photosensitive area 301 is electrically connected to the anode layer 2 of the corresponding light-emitting unit 101 through the thin film transistor 201, and the second photosensitive area 302 is electrically connected to the cathode layer 3. When the OLED display panel 100 is used under the condition of sufficient external light, since the first photosensitive area 301 and the second photosensitive area 302 can convert light energy into electrical signals under the action of external light, additional voltage signals are provided for the anode layer 2 and the cathode layer 3 in the corresponding light-emitting unit 101, the number of holes in the anode layer 2 and the electrons in the cathode layer 3 is increased, so that the brightness of the corresponding light-emitting layer 1 is improved, which is beneficial to improving the display effect of the OLED display panel 100.

[0048] Hereinafter, the light emitting side of the light emitting substrate 10 is Figure 1 The downward dashed arrow in the figure is used as an example for explanation.

[0049] like Figure 1 As shown, in some embodiments, a photoelectric conversion layer 30 is disposed on a side of the thin film transistor array layer 20 away from the light emitting substrate 10 .

[0050] Through the above arrangement, the thin film transistor array layer 20 is located between the light-emitting substrate 10 and the photoelectric conversion layer 30, which not only facilitates the connection of the drain electrode 22 of the thin film transistor 201, but also shortens the connection distance between the first photosensitive area 301 and the gate electrode 24 of the thin film transistor 201, and facilitates the electrical connection between the first photosensitive area 301 of the photoelectric conversion layer 30 and the drain electrode 22 of the thin film transistor 201, thereby facilitating the reliability of the OLED display panel 100.

[0051] like Figure 1 As shown, in some embodiments, the photoelectric conversion layer 30 includes a glass substrate 31 and a plurality of photosensitive portions 32 and a first insulating layer 33 arranged on the glass substrate 31, the photosensitive portion 32 includes a first photosensitive area 301 and a second photosensitive area 302, and a first conductive via 330 connecting the gate 24 and the first photosensitive area 301 is opened on the first insulating layer 33.

[0052] The above-mentioned glass substrate 31 mainly plays a bearing role. The photosensitive part 32 is usually formed by coating a photosensitive material on a specific area of ​​the glass substrate 31, or first coating a layer of photosensitive material on the glass substrate 31, and then removing excess photosensitive material through etching and other technologies, thereby forming a first photosensitive area 301 and a second photosensitive area 302 on the glass substrate 31.

[0053] The first conductive via 330 enables the gate 24 of the thin film transistor 201 to be mechanically and electrically connected to the first photosensitive region 301. The first conductive via 330 is formed by opening a via at a specific position of the first insulating layer 33 and then filling the via with a conductive medium.

[0054] Through the above arrangement, the first photosensitive area 301 is electrically connected to the gate electrode 24 of the thin film transistor 201 through the first conductive via 330. This not only simplifies the process, is easy to implement, and has low cost, but also separates the first photosensitive area 301 and the second photosensitive area 302 from the thin film transistor 201 through the first insulating layer 33 to achieve insulation between the two, thereby reducing the mutual influence between the two, which is beneficial to improving the reliability of the OLED display panel 100.

[0055] like Figure 1 As shown, in some embodiments, the number of photosensitive portions 32 is equal to the number of light-emitting units 101, and multiple photosensitive portions 32 correspond to multiple light-emitting units 101. That is, the anode layer 2 and the cathode layer 3 of each light-emitting unit 101 are respectively connected to a first photosensitive area 301 and a second photosensitive area 302.

[0056] Through the above arrangement, whether under uniform illumination or partial bright illumination, the luminous brightness of each light emitting unit 101 is determined by the rated voltage and the compensation voltage provided by the photosensitive unit 32. The photosensitive unit 32 corresponding to each light emitting unit 101 converts different received light into different electrical signals. Thus, the compensation voltage corresponding to each light emitting unit 101 is different according to the corresponding light. In this way, not only the brightness of the OLED display panel 100 can be improved, but also the compensation voltages of different light emitting units 101 are different, so that the OLED display panel 100 can achieve the display effect and reduce the driving power consumption. It is particularly suitable for use under partial strong light.

[0057] like Figure 1 As shown, in some embodiments, the number of thin film transistors 201 is equal to the number of light emitting units 101 , and the plurality of thin film transistors 201 corresponds to the plurality of light emitting units 101 in a one-to-one manner.

[0058] Through the above arrangement, each light-emitting unit 101 is driven and controlled by a corresponding thin film transistor 201, so that independent control of multiple light-emitting units 101 is achieved, so that the brightness of some light-emitting units 101 in the light-emitting matrix 10 can be locally adjusted as needed, so that the OLED display panel 100 has a better display effect when used under local bright light, for example.

[0059] like Figure 1 As shown, in some embodiments, a second insulating layer 40 is disposed between the thin film transistor 201 and the anode layer 2 , and a second conductive via 41 connecting the anode layer 2 and the drain electrode 22 is formed on the second insulating layer 40 .

[0060] The second conductive via 41 enables mechanical and electrical connection between the drain electrode 22 of the thin film transistor 201 and the anode layer 2. The second conductive via 41 is formed by opening a via at a specific position of the second insulating layer 40 and then filling the via with a conductive medium.

[0061] Through the above arrangement, the anode layer 2 and the drain electrode 22 of the thin film transistor 201 are electrically connected through the second conductive via 41. This not only simplifies the process, is easy to implement, and has low cost, but also separates the anode layer 2 from the thin film transistor 201 through the second insulating layer 40 to achieve insulation between the two, thereby reducing the mutual influence between the two, which is beneficial to improving the reliability of the OLED display panel 100.

[0062] For example, Figure 1As shown, a plurality of second conductive vias 41 are provided on the second insulating layer 40, and the number of the second conductive vias 41 is the same as the number of the thin film transistors 201, the number of the photosensitive parts 32, and the number of the light emitting units 101, and they correspond one to one. That is, one second conductive via 41 connects the anode layer 2 of a corresponding light emitting unit 101 and the drain electrode 22 of a thin film transistor 201, so that each light emitting unit 101 is independently controlled.

[0063] like Figure 1 and Figure 2 As shown, along the thickness direction of the OLED display panel, the orthographic projection of the second conductive via 41 on the light-emitting substrate 10 is located on one side of the first corner of the anode layer 2, and the orthographic projection of the photosensitive portion 32 on the light-emitting substrate 10 is located on the other side of the first corner. In other words, the orthographic projections of the second conductive via 41 and the photosensitive portion 32 on the light-emitting substrate 10 are both located at the first corner, and the positions do not overlap, so that the two do not interfere with each other.

[0064] Through the above arrangement, not only the photosensitive portion 32, the second conductive via 41 and the anode layer 2 are arranged in the same manner, which facilitates the connection of the photosensitive portion 32 and the second conductive via 41 to the anode layer 2, respectively, thereby facilitating the improvement of connection reliability, but also the photosensitive portion 32, the second conductive via 41 and the anode layer 2 are staggered in arrangement, thereby reducing the size of the OLED display panel in the thickness direction, thereby facilitating the thinning of the OLED display panel.

[0065] like Figure 1 As shown, in some embodiments, along the thickness direction of the OLED display panel 100 (eg Figure 1 In the vertical direction), the positive projection of the photosensitive portion 32 and the thin film transistor 201 on the light-emitting substrate 10 is located between two adjacent light-emitting units 101.

[0066] Through the above arrangement, not only the photosensitive portion 32 and the thin film transistor 201 are electrically connected to the anode layer 2 and the cathode layer 3 of the corresponding light-emitting unit 101, thereby realizing normal light emission of each light-emitting unit 101, but also the influence on the two adjacent light-emitting units 101 is reduced, which is beneficial to improving the display effect.

[0067] like Figure 2 and Figure 3 As shown, in some embodiments, multiple anode layers 2 are arranged in an array, cathode layers 3 in the same row or column are connected to cathode strips in strip shape, the second photosensitive area 302 is in strip shape, and the second photosensitive area 302 is arranged in the same direction as the cathode strips.

[0068] The overlapping area between the cathode strip and the corresponding anode layer 2 determines the opening of each light-emitting unit 101 , that is, the opening of each light-emitting unit 101 is mainly determined by the corresponding anode layer 2 .

[0069] Through the above arrangement, the preparation process of the cathode layer 3 of the light-emitting substrate 10 is simplified. Moreover, the arrangement direction of the second photosensitive area 302 is the same as that of the cathode strip, which not only shortens the connection distance between the second photosensitive area 302 and the cathode strip, facilitating reliable connection between the two, but also connects multiple cathode layers 3 located in the same column or row into a cathode strip, making it convenient to provide a driving voltage to the cathode layer 3, thereby optimizing the circuit arrangement of the OLED display panel 100.

[0070] For example, Figure 2 As shown, multiple anode layers 2 are arranged in 3 rows and 4 columns, and the first photosensitive areas 301 are also arranged in 3 rows and 4 columns. The multiple first photosensitive areas 301 are connected to the multiple anode layers 2 one by one; the cathode layers 3 located in the same column are connected to form a cathode strip, that is, including 4 cathode strips arranged in columns, and the second photosensitive areas 302 include 4 second photosensitive areas 302, which are also arranged in columns.

[0071] Of course, multiple cathode layers 3 in the same row may be connected to form cathode strips. In this case, multiple second photosensitive areas 302 are arranged in rows, or multiple cathode layers 3 are not connected but are respectively connected to corresponding thin film transistors 201, which is not specifically limited here.

[0072] like Figure 2 and Figure 3 As shown, in some embodiments, the number of cathode strips is the same as the number of second photosensitive regions 302 , and the cathode strips are connected to the second photosensitive regions 302 in a one-to-one correspondence.

[0073] Through the above arrangement, the second photosensitive area 302 can provide voltage to the corresponding cathode strips, that is, multiple cathode layers 3 located in the same column or row, so that the number of electrons generated by the corresponding cathode layers 3 increases the same, thereby optimizing the circuit layout of the OLED display panel 100.

[0074] like Figure 2 and Figure 3 As shown, the thin film transistor array layer 20 also includes 4 signal lines 51 arranged in rows and 5 data lines 52 arranged in columns. Each signal line 51 is connected to the anode layer 2 located in the same row, and each data line 52 is connected to the cathode layer 2 located in the same column. The data lines 52 and the signal lines 51 are crisscrossed and arranged between two adjacent light-emitting units 101.

[0075] Embodiment 2

[0076] like Figure 1 and 4 As shown, the present application provides a method for preparing an OLED display panel 100, comprising:

[0077] S100: Plating a photosensitive material on the glass substrate 31 to form a first photosensitive area 301 and a second photosensitive area 302;

[0078] S200: coating a first insulating layer 33 on the glass substrate 31 to cover the first photosensitive area 301 and the second photosensitive area 302, opening a first via hole in the first insulating layer 33 to communicate with the first photosensitive area 301, and filling the first via hole with a conductive medium to form a first conductive via hole 330;

[0079] S300: a thin film transistor array layer 20 is disposed on the first insulating layer 33, a gate electrode 24 of the thin film transistor 201 is connected to a first conductive via 330, and a first photosensitive region 301 is electrically connected to the gate electrode 24;

[0080] S400: a second insulating layer 40 is provided on the thin film transistor array layer 20, a second via hole connected to the drain electrode 22 of the thin film transistor 201 is opened in the second insulating layer 40, and a conductive medium is filled in the second via hole to form a second conductive via hole 41;

[0081] S500 : an anode layer 2 , a light emitting layer 1 and a cathode layer 3 are sequentially stacked on the second insulating layer 40 , the anode layer 2 is connected to the second conductive via 41 , and the cathode layer 3 is electrically connected to the second photosensitive region 302 .

[0082] In the above S100, the glass substrate 31 mainly plays a bearing role, and a photosensitive material is plated on the glass substrate 31 to form the first photosensitive area 301 and the second photosensitive area 302, including plating the photosensitive material on the glass substrate 31 through a mask to form the first photosensitive area 301 and the second photosensitive area 302, or first plating a layer of photosensitive material on the glass substrate 31, and removing excess photosensitive material through etching and other technologies, thereby forming the first photosensitive area 301 and the second photosensitive area 302 on the glass substrate 31.

[0083] In the above S300, the gate electrode 24 in the thin film transistor array layer 20 is separated from the active layer 21 by the third insulating layer 25. The preparation process of arranging the thin film transistor array layer 20 on the first insulating layer 33 is as follows: firstly, a gate electrode 24 layer is arranged at a position of the first insulating layer 33 corresponding to the first conductive through hole, and the third insulating layer 25 is arranged on the gate electrode 24 layer, and then the active layer 21 is arranged, and then a conductive metal layer is arranged on the active layer 21, and the corresponding source electrode 23 and drain electrode 22 are formed by etching, so as to form a plurality of thin film transistors 201, and the preparation of the thin film transistor array layer 20 is completed.

[0084] The preparation method of the OLED display panel 100 in the present embodiment is as follows: a photoelectric conversion layer 30 is provided on a side of the thin film transistor array layer 20 away from the light-emitting substrate 10; the photoelectric conversion layer 30 includes a first photosensitive region 301 and a second photosensitive region 302 corresponding to the light-emitting unit 101; the first photosensitive region 301 in the photoelectric conversion layer 30 is electrically connected to the gate electrode 24 of the thin film transistor 201; the drain electrode 22 of the thin film transistor 201 is electrically connected to the anode of the light-emitting unit 101; that is, the first photosensitive region 301 is electrically connected to the anode layer 2 of the corresponding light-emitting unit 101 through the thin film transistor 201; the second photosensitive region 302 is electrically connected to the cathode layer 3; when the OLED display panel 100 is used under the condition of sufficient external light, since the first photosensitive region 301 and the second photosensitive region 302 can convert light energy into electrical signals under the action of external light, additional voltage signals are provided for the anode layer 2 and the cathode layer 3 in the corresponding light-emitting unit 101, thereby increasing the number of holes in the anode layer 2 and the number of electrons in the cathode layer 3, thereby increasing the brightness of the corresponding light-emitting layer 1, thereby facilitating improving the display effect of the display device.

[0085] The method for preparing the OLED display panel 100 in the second embodiment is used to prepare the OLED display panel 100 in some embodiments of the first embodiment. The structure of the OLED display panel 100 in this embodiment is the same as that in the first embodiment, and will not be described again.

[0086] Embodiment 3

[0087] like Figure 5 As shown, the present application further provides a display device, including a housing 200 and an OLED display panel 100 disposed on the housing 200 .

[0088] The display device in this embodiment is provided with a photoelectric conversion layer 30 on the light-emitting side of the light-emitting substrate 10. The photoelectric conversion layer 30 includes a first photosensitive area 301 and a second photosensitive area 302 corresponding to the light-emitting unit 101. The first photosensitive area 301 in the photoelectric conversion layer 30 is electrically connected to the gate electrode 24 of the thin film transistor 201, and the drain electrode 22 of the thin film transistor 201 is electrically connected to the anode of the light-emitting unit 101, that is, the first photosensitive area 301 is electrically connected to the anode layer 2 of the corresponding light-emitting unit 101 through the thin film transistor 201, and the second photosensitive area 302 is electrically connected to the cathode layer 3. When the OLED display panel 100 is used under the condition of sufficient external light, since the first photosensitive area 301 and the second photosensitive area 302 can convert light energy into electrical signals under the action of external light, additional voltage signals are provided for the anode layer 2 and the cathode layer 3 in the corresponding light-emitting unit 101, thereby increasing the number of holes in the anode layer 2 and the electrons in the cathode layer 3, so that the brightness of the corresponding light-emitting layer 1 is improved, which is beneficial to improving the display effect of the display device.

[0089] The structure of the OLED display panel 100 in the display device in the third embodiment is the same as that of the OLED display panel 100 in the first embodiment, and will not be described in detail herein.

[0090] The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. An OLED display panel, characterized in that: include: A light-emitting matrix (10) comprises a plurality of light-emitting units (101), wherein the light-emitting units (101) comprise an anode layer (2), a light-emitting layer (1) and a cathode layer (3); A thin film transistor array layer (20) is arranged on the light-emitting substrate (10), the thin film transistor array layer (20) comprises a plurality of thin film transistors (201), the thin film transistors (201) comprise an active layer (21), a source electrode (23) and a drain electrode (22) arranged on the active layer (21), and a gate electrode (24), the drain electrode (22) being electrically connected to the anode layer (2); A photoelectric conversion layer (30) is arranged on the light-emitting side of the light-emitting substrate (10), the photoelectric conversion layer (30) comprising a first photosensitive region (301) and a second photosensitive region (302), the second photosensitive region (302) being electrically connected to the cathode layer (3), and the first photosensitive region (301) being electrically connected to the gate (24); Wherein, the first photosensitive area (301) and the second photosensitive area (302) can convert light energy into electrical signals under the action of external light.

2. The OLED display panel according to claim 1, characterized in that: The photoelectric conversion layer (30) is provided on a side of the thin film transistor array layer (20) away from the light-emitting substrate (10).

3. The OLED display panel according to claim 1 or 2, characterized in that: The photoelectric conversion layer (30) comprises a glass substrate (31), a plurality of photosensitive portions (32) and a first insulating layer (33) arranged on the glass substrate (31), the photosensitive portion (32) comprising the first photosensitive area (301) and the second photosensitive area (302), and the first insulating layer (33) is provided with a first conductive via (330) connecting the gate (24) and the first photosensitive area (301).

4. The OLED display panel according to claim 3, characterized in that: Along the thickness direction of the OLED display panel, the orthographic projections of the photosensitive portion (32) and the thin film transistor (201) on the light-emitting substrate (10) are located between two adjacent light-emitting units (101).

5. The OLED display panel according to claim 3, characterized in that: The number of the photosensitive parts (32) is equal to the number of the light-emitting units (101), and the plurality of photosensitive parts (32) corresponds one to one to the plurality of light-emitting units (101); And / or, the number of the thin film transistors (201) is equal to the number of the light emitting units (101), and a plurality of the thin film transistors (201) corresponds one to one to a plurality of the light emitting units (101).

6. The OLED display panel according to claim 4, characterized in that: A second insulating layer (40) is provided between the thin film transistor (201) and the anode layer (2), and a second conductive via (41) connecting the anode layer (2) and the drain electrode (22) is provided on the second insulating layer (40); The number of the second conductive vias (41) is plural, the plural second conductive vias (41) correspond one-to-one to the plural anode layers (2), and the plural anode layers (2) correspond one-to-one to the plural photosensitive portions (32); Along the thickness direction of the OLED display panel, the orthographic projection of the second conductive via (41) on the light-emitting substrate (10) is located on one side of a first corner of the anode layer (2), and the orthographic projection of the photosensitive portion (32) on the light-emitting substrate (10) is located on the other side of the first corner.

7. The OLED display panel according to any one of claims 1 to 2 and 4 to 6, characterized in that: The plurality of anode layers (2) are arranged in an array, the cathode layers (3) located in the same row or column are connected to cathode strips in the form of strips, the second photosensitive areas (302) are in the form of strips, and the second photosensitive areas (302) are arranged in the same direction as the cathode strips.

8. The OLED display panel according to claim 7, characterized in that: The number of the cathode strips is the same as the number of the second photosensitive areas (302), and the cathode strips are connected to the second photosensitive areas (302) in a one-to-one correspondence.

9. A method for preparing an OLED display panel, for preparing the OLED display panel according to any one of claims 5 to 8, characterized in that: The preparation method comprises: Plating a photosensitive material on a glass substrate to form a first photosensitive area and a second photosensitive area; Coating a first insulating layer on the glass substrate to cover the first photosensitive area and the second photosensitive area, opening a first via hole in the first insulating layer to communicate with the first photosensitive area, and filling a conductive medium in the first via hole to form a first conductive via hole; A thin film transistor array layer is provided on the first insulating layer, the gate of the thin film transistor is connected to the first conductive via, and the first photosensitive area is electrically connected to the gate; A second insulating layer is provided on the thin film transistor array layer, a second via hole connected to the drain electrode of the thin film transistor is provided on the second insulating layer, and a conductive medium is filled in the second via hole to form a second conductive via hole; An anode layer, a light-emitting layer and a cathode layer are sequentially stacked on the second insulating layer, the anode layer is connected to the second conductive via, and the cathode layer is electrically connected to the second photosensitive area.

10. A display device, characterized in that: include: a housing (200), The OLED display panel (100) according to any one of claims 1 to 8, wherein the OLED display panel (100) is arranged on the housing (200).

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