Method and apparatus for obtaining silicon photomultiplier data

Abstract

Systems and methods are provided for improving analysis results obtained by a silicon photomultiplier device. The system may include an analysis device including a silicon photomultiplier device and a computing system. The system may further include a processing component and a storage unit configured to receive the silicon photomultiplier device input and output information and to determine a temperature of the silicon photomultiplier device.

Description

[0001] Related applications

[0002] This application claims priority to U.S. Provisional Application No. 63 / 336,822, filed on April 29, 2022, and entitled “METHODS AND DEVICES FOR OBTAINING SILICON PHOTOMULTIPLIER DATA,” which is incorporated herein by reference. Technical Field

[0003] The present disclosure relates to methods and systems employing silicon photomultipliers. Specifically, the present disclosure relates to methods and systems employing improved methods for addressing the effects of device temperature changes on silicon photomultiplier performance. The present disclosure also relates to analytical systems and devices incorporating these improvements. Background Art

[0004] Silicon photomultiplier (SiPM) devices are highly sensitive photodetectors used in a variety of applications involving low-light measurements. For example, SiPMs can be used as photodetectors in analytical devices and systems, LIDAR units, 3D ranging devices, radiation detection units, PET devices, nephelometric devices, turbidimetry devices, air quality analysis devices, particle analysis devices, photon correlation spectroscopy devices, Raman spectroscopy devices, and any other device that relies on the precise detection of incident light. However, SiPMs have certain limitations. The output gain of a SiPM device can be affected by or dependent on its operating voltage and temperature. With respect to temperature, the gain at a fixed operating voltage can vary by as much as 1% to 2% per °C under typical operating conditions. This can cause inaccuracies in the use of SiPMs for light detection in precision applications. Therefore, what is needed are methods and devices for improving SiPM performance by addressing and accounting for SiPM temperature changes. Summary of the Invention

[0005] Embodiments as disclosed herein include a method for obtaining temperature-corrected photometric data via a silicon photomultiplier device, the method comprising: activating the silicon photomultiplier device in a forward bias mode via a forward bias mode input signal; measuring the forward bias mode response signal via at least one processor; determining, via at least one processor, the temperature of the silicon photomultiplier device based on the forward bias mode input signal and the forward bias mode response signal; determining, via at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light based on the output signal and a gain of the silicon photomultiplier device.

[0006] Another embodiment as disclosed herein includes a method for obtaining temperature-corrected photometric data via a silicon photomultiplier device, the method comprising: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; measuring the reverse bias mode saturation current via at least one processor; determining, via at least one processor, a temperature of the silicon photomultiplier device based on the reverse bias mode saturation current; determining, via at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light based on the temperature of the silicon photomultiplier device and a gain of the silicon photomultiplier device.

[0007] Another embodiment as disclosed herein includes a method for obtaining temperature-corrected photometric data via a silicon photomultiplier device, the method comprising: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a temperature of the silicon photomultiplier device based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; determining an operational reverse bias mode voltage via at least one processor; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light based on the temperature of the silicon photomultiplier device and a gain of the silicon photomultiplier device.

[0008] Another embodiment as disclosed herein includes a method for determining the temperature of a silicon photomultiplier device, the method comprising: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a gain of the silicon photomultiplier device when exposed to the predetermined light intensity based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; and determining the temperature of the silicon photomultiplier device based on the gain.

[0009] Another embodiment as disclosed herein includes a system for obtaining temperature-corrected photometric data, the system comprising: a silicon photomultiplier device comprising a plurality of photoavalanche diodes; and at least one processor configured with software instructions for: activating the silicon photomultiplier device in a forward bias mode via a forward bias mode input signal; measuring, by the at least one processor, a forward bias mode response signal; determining, by the at least one processor, a temperature of the silicon photomultiplier device based on the forward bias mode input signal and the forward bias mode response signal; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light based on the output signal and a gain of the silicon photomultiplier device.

[0010] Another embodiment as disclosed herein includes a system for obtaining temperature-corrected photometric data, the system comprising: a silicon photomultiplier device comprising a plurality of photoavalanche diodes; and at least one processor configured with software instructions for: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; measuring, by the at least one processor, a reverse bias mode saturation current; determining, by the at least one processor, a temperature of the silicon photomultiplier device based on the reverse bias mode saturation current; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light based on the temperature of the silicon photomultiplier device and a gain of the silicon photomultiplier device.

[0011] Another embodiment as disclosed herein includes a system for obtaining temperature-corrected photometric data, the system comprising: a silicon photomultiplier device comprising a plurality of photoavalanche diodes; and at least one processor configured with software instructions for: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a temperature of the silicon photomultiplier device based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light based on the temperature of the silicon photomultiplier device and a gain of the silicon photomultiplier device.

[0012] Another embodiment as disclosed herein includes a system for obtaining temperature-corrected photometric data, the system comprising: a silicon photomultiplier device comprising a plurality of photoavalanche diodes; and at least one processor configured with software instructions for: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a gain of the silicon photomultiplier device when exposed to the predetermined light intensity based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; and determining a temperature of the silicon photomultiplier device based on the gain.

[0013] Another embodiment as disclosed herein includes a non-transitory computer-readable medium configured with software instructions to cause execution, by at least one processor, of a method, the method comprising: activating a silicon photomultiplier device in a forward bias mode via a forward bias mode input signal; measuring, by the at least one processor, a forward bias mode response signal; determining, by the at least one processor, a temperature of the silicon photomultiplier device based on the forward bias mode input signal and the forward bias mode response signal; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light based on the output signal and a gain of the silicon photomultiplier device.

[0014] Another embodiment as disclosed herein includes a non-transitory computer-readable medium configured with software instructions to cause execution, by at least one processor, of a method, the method comprising: activating a silicon photomultiplier device in a reverse bias mode by a reverse bias input signal; measuring, by the at least one processor, a reverse bias mode saturation current; determining, by the at least one processor, a temperature of the silicon photomultiplier device based on the reverse bias mode saturation current; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode by the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light based on the temperature of the silicon photomultiplier device and a gain of the silicon photomultiplier device.

[0015] Another embodiment as disclosed herein includes a non-transitory computer-readable medium configured with software instructions to cause execution by at least one processor of a method, the method comprising: a silicon photomultiplier device comprising a plurality of photoavalanche diodes; at least one processor configured with software instructions for: activating the silicon photomultiplier device in a reverse bias mode by a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a temperature of the silicon photomultiplier device based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode by the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light based on the temperature of the silicon photomultiplier device and a gain of the silicon photomultiplier device. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 An example silicon photodiode multiplier device (SiPM) consistent with embodiments of the present invention is shown.

[0017] Figure 2 is a graph illustrating an example diode response consistent with an embodiment of the present invention.

[0018] Figure 3 An example SiPM device configured for light sensing is shown, consistent with embodiments of the present invention.

[0019] Figure 4 An exemplary computing system consistent with embodiments of the present invention is depicted.

[0020] Figure 5 A flow chart depicting an exemplary method of obtaining temperature-corrected analytical data consistent with embodiments of the present invention is shown.

[0021] Figure 6 A quenching resistor of a silicon photomultiplier device is shown, consistent with embodiments of the present invention.

[0022] Figure 7 Shown is a graph depicting the temperature dependence of breakdown voltage in an example SiPM device.

[0023] Figure 8 is a schematic illustration of an example SiPM device configured for light sensing, consistent with embodiments of the present invention.

[0024] Figure 9 A flow chart depicting an exemplary method of obtaining temperature-corrected analytical data consistent with embodiments of the present invention is shown.

[0025] Figure 10 A flow chart depicting an exemplary method of obtaining temperature-corrected analytical data consistent with embodiments of the present invention is shown.

[0026] Figure 11 Shown is a graph depicting the temperature dependence of a SiPM in reverse bias mode.

[0027] Figure 12 An example SiPM-based analytical device consistent with embodiments of the present invention is shown.

[0028] Figure 13 is a graph showing the correlation between measured temperature and measured voltage in an example SiPM device.

[0029] Figure 14 FIG. 5 is a graph showing the theoretical error in a two-point method for determining SiPM temperature according to an embodiment of the present invention.

[0030] Figure 15 is a graph showing the amount of measurement error in K produced by noise in the measured voltage.

[0031] Figure 16 is a graph comparing estimated temperature to measured temperature according to an embodiment of the present invention. DETAILED DESCRIPTION

[0032] The present disclosure provides systems and computer-implemented methods for determining and accounting for temperature in analytical devices and other equipment that employ silicon photomultiplier devices. As discussed herein, temperature determination systems, devices, and methods can be used to improve the accuracy and speed of performing light detection analysis steps. The temperature determination methods, devices, and systems discussed herein can be applied to various systems and devices that incorporate SiPM devices and / or avalanche photodiodes and require temperature compensation for optimal performance. Such devices can include, for example, analytical devices and systems, LIDAR units, 3D ranging devices, radiation detection units, PET devices, nephelometric devices, turbidimetric devices, air quality analysis devices, particle analysis devices, photon correlation spectroscopy devices, Raman spectroscopy devices, and any other device that relies on accurate detection of incident light.

[0033] Figure 1 An example silicon photodiode multiplier device (SiPM) 200 is shown, which can be included in any SiPM-based photodetection device. SiPM 200 includes multiple photoavalanche diodes (PADs) 201, a power supply 202, and an output monitor 203. SiPM 200 can include any suitable number of PADs 201, ranging from tens to hundreds or thousands of PADs 201, including over 10,000 PADs 201. PADs 201 are arranged in an m×n or n×m array, where n and m can be equal (square array) or unequal (rectangular array). In alternative embodiments, PADs 201 can be arranged in any other suitable arrangement, such as a hexagonal, circular, etc. Electrically, PADs 201 are arranged parallel to one another in SiPM 200.

[0034] Power supply 202 is controlled, for example, via a computer system or other control system, as discussed below, to generate a bias voltage across PAD 201. Power supply 202 can be a voltage source configured to provide a forward (positive) or reverse (negative) proportional voltage bias across PAD 201. Power supply 202 can be a current source configured to provide a controlled current to generate a forward (positive) or reverse (negative) proportional voltage bias across PAD 201, or to generate a proportional current through PAD 201.

[0035] Output monitor 203 is configured to measure the output of SiPM 200 during operation. Output monitor 203 can be configured to measure the current output of SiPM 200. In an embodiment, output monitor 203 can be configured to measure the voltage at the output of SiPM 200 and determine the current based on the measured voltage. In some implementations, output monitor 203 can include an amplifier circuit configured to amplify the voltage or current output of SiPM 200.

[0036] In operation, the combined action of multiple PADs 201 can be used to determine the amount of light, such as the number of photons, that shines on SiPM 200. PAD 201 is a pn junction based semiconductor device. Figure 2 Graph 300 illustrates a typical voltage-current response for PAD 201. In forward bias mode, the diode conducts very little current until a threshold voltage 302 is reached. Above threshold voltage 302 in forward bias mode, the diode operates as a short circuit, offering very little resistance to the free flow of current. As shown in graph 300, the current through the diode increases rapidly above threshold voltage 302. In reverse bias mode, when subjected to a negative voltage, PAD 201 exhibits a proportional mode 303, in which the current conducted is approximately proportional to the reverse bias voltage. When the reverse bias voltage has a magnitude exceeding the voltage associated with proportional mode 303, PAD 201 enters saturation mode 304, in which the voltage can be increased without significantly increasing the current. Thus, in saturation mode 304, the diode permits the flow of saturation current, approximately regardless of the reverse bias voltage. When the reverse bias voltage increases in magnitude above the breakdown voltage V Breakdown or V B At 309, the PAD 201 enters the "Geiger mode". Similar to the threshold voltage 302 in the forward bias mode, the breakdown voltage V B 309 is the reverse bias voltage at which the resistance of the diode is significantly reduced and permits the flow of increasing current. In Geiger mode, a small increase in negative voltage causes a large change in the current conducted.

[0037] During operation for detecting photons, PAD 201 is reverse biased at a voltage that exceeds the junction breakdown voltage V Breakdown The high reverse bias maintains the electric field in PAD 201 high enough so that a single charge carrier injected into the depletion layer of PAD 201 (i.e., the charge-free region at the PN junction) can trigger an avalanche. This type of avalanche is caused by a photon shining on PAD 201. PAD 201 absorbs the energy of the photon in the depletion layer, thereby releasing a charge carrier, which in turn triggers an avalanche of charge carriers, resulting in an output current spike. As the resistance in PAD 201 decreases with the current spike, the bias voltage decreases until it can no longer sustain the avalanche. Therefore, after reaching a maximum value, the current spike decays back to the current level of saturation mode 304. The magnitude of the reverse bias voltage returns to the level required to trigger the avalanche again to obtain a new reading. In this reverse bias mode of operation, the receipt of a photon triggers an avalanche, which causes a single current spike at the output of PAD 201.

[0038] See again Figure 1SiPM 200 operates through the combined action of multiple PADS 201. When multiple photons (or more generally, light) impinge on multiple PADS 201 of SiPM 200, they induce multiple current spikes throughout the parallel-connected PADS 201. Due to the parallel nature of PADs 201, the collection of individual current spikes output from the multiple parallel-connected PADS 201 is additively combined at output monitor 203 and read as an analog current having a level proportional to the combined incidence of photons across all PADS 201 of SiPM 200 (which may indicate the luminosity / luminescence of light (if any) impinging on SiPM 200). Integrating the total output current spike over time allows the total number of output charge carriers to be determined. The proportional ratio between the number of output charge carriers and the number of input photons is the gain of SiPM 200. In this way, SiPM 200 provides a light detection device that is sensitive to the incidence of one or more photons and accurate enough to detect the number of incident photons. As discussed above, SiPMs such as SiPM 200 can be used in light detection devices and systems (e.g., electrochemiluminescence, fluorescence, and chemiluminescence), LIDAR units, 3D ranging devices, radiation detection units, PET devices, nephelometric devices, turbidimetric devices, air quality analysis devices, particle analysis devices, photon correlation spectroscopy devices, Raman spectroscopy devices, and any other device that relies on the accurate detection of incident light.

[0039] During operation of SiPM 200 or any other SiPM-based light detection device, the temperature of PADS 201 of SiPM 200 may be affected by the measurements being taken. Activation of PADS 201 to conduct a high level of current causes a temperature increase. The temperature increase may be proportional to or otherwise dependent on the amount of current conducted and, therefore, on the intensity of the detected light source. Repeated and / or frequent activations cause higher levels of temperature increase. Additionally, changes in ambient temperature not caused by the SiPM itself may be experienced by the SiPM in its operating environment.

[0040] The diodes of PAD 201, which comprises SiPM 200, have temperature-dependent characteristics. For example, the gain of SiPM 200, and therefore its output response, can vary depending on its temperature. Because the gain and output of SiPM 200 vary with its temperature, the temperature of SiPM 200 must be controlled or accounted for during use to maintain maximum accuracy and precision. As discussed above, SiPMs can be used in analytical devices and systems, LIDAR units, 3D ranging devices, radiation detection units, PET devices, nephelometric devices, turbidimetric devices, air quality analysis devices, particle analysis devices, photon correlation spectroscopy devices, Raman spectroscopy devices, and any other device that relies on the precise detection of incident light. In each of these devices, systems, or detectors, temperature-induced accuracy deficiencies can present challenges in obtaining accurate and consistent measurements. The embodiments discussed herein address these temperature-induced accuracy shortcomings.

[0041] In some embodiments, cooling devices, such as fans, heat sinks, or Peltier coolers, can be provided within a SiPM-based device to reduce temperature increases within the SiPM. However, adding cooling devices can have the disadvantage of generating noise and / or vibration and / or adding additional components and complexity to the system. In other embodiments, the timing of the SiPM's multiple acquisitions can be adjusted to allow for more cooling time between acquisitions or detections in order to control temperature increases. However, increasing the timing between acquisitions can increase the total number of reads of SiPM measurements.

[0042] In other embodiments, the operating voltage of a SiPM (also referred to as the bias voltage or biasing voltage) can be adjusted to compensate for the effect of temperature on the SiPM's gain (e.g., the ratio between the output current and the number of incident photons). As explained in more detail below, the SiPM gain is a function of the overvoltage (i.e., the amount by which the bias voltage exceeds the breakdown voltage). Because the breakdown voltage is temperature-dependent, so too is the SiPM gain. If the bias voltage remains fixed, the SiPM's gain changes linearly with temperature because the breakdown voltage varies linearly with temperature. As the breakdown voltage changes, the overvoltage changes accordingly. If the bias voltage is adjusted to maintain a constant overvoltage (i.e., a voltage above the breakdown voltage), the gain-temperature dependency can be eliminated. In still other embodiments, the SiPM's output can be calibrated based on the gain-temperature dependency after (or before) each capture or detection, to determine the appropriate number of incident photons by calculating the temperature-adjusted gain after (or before) each measurement.

[0043] Some embodiments that account for temperature may involve the use of a separate, additional sensor (e.g., a temperature sensor) to provide information about the SiPM's temperature. If not integrated into the SiPM's chip package, the separate, additional sensor (e.g., a temperature sensor) may be mounted externally to the SiPM. External mounting may introduce a time lag between changes in the SiPM's temperature and its measurement by the external temperature sensor. This lag may make timely compensation for SiPM temperature changes difficult and may result in a loss of sensor accuracy and precision. Even when mounted internally within the SiPM chip package, thermal lag between the SiPM PADS and the temperature sensor itself may result in a loss of sensor accuracy and precision. In other embodiments that account for temperature, the temperature sensor may be integrated within the SiPM's chip package. In still other embodiments, the SiPM may be used as a temperature sensor to allow for accounting for or adjustment of the SiPM's temperature.

[0044] Figure 3 Schematically depicted is a SiPM 200 incorporated into an example light detection device 301 configured to use the SiPM as a temperature sensor. As discussed above, the light detection device 301 can include any device configured to perform measurements by photon detection at the SiPM 200. Thus, the light detection device 301 can include, for example, a light detection analysis unit (e.g., electrochemiluminescence, fluorescence, and chemiluminescence), a radiation detection device, a LIDAR device, a 3D ranging device, a low-light detector, a PET scanner, and others. The light detection unit 301 includes a housing 310, a SiPM 200 including a plurality of PADS 201 (not shown), a power supply 202, and an output monitor 203. The light detection device 301 can include and / or be connected to a computer system 502, as described below with respect to FIG. Figure 4 Describe in more detail.

[0045] In operation, the light detection device 301 is configured to receive photons 320 emitted from, reflected by, or otherwise traveling from a target object 350. The target object 350 can be any object, substance, etc., on which measurements are taken by the light detection device 301. The SiPM 200 is powered by a power supply 202. The photons 320 impinge on the PADS 201 of the SiPM 200, and a measurement of the incident light intensity is taken by readings taken by the output monitor 203. In an embodiment, a computer system 502 is configured to control various aspects of the light detection device 301, as discussed in more detail below.

[0046] The following is about Figures 4 to 10 The described embodiments are configured to measure SiPM temperature and / or calibrate to calibrate SiPM devices to obtain more accurate data under varying temperature conditions. Specifically, as described below with respect to Figure 5 、9 As described in and 10, the characteristics of the SiPM can be used to detect or determine the temperature of the SiPM. The SiPM itself can therefore be used as a thermometer to detect its own temperature. In other embodiments, as described below with respect to Figure 7 and 8 As described, temperature variations of the SiPM can be taken into account by calibration via a known light source.

[0047] Figure 4 An embodiment of a computer system consistent with embodiments of the present invention is shown. Computing system 502 is an example of a computing system configured to operate and / or interface with a SiPM-based light detection system as discussed herein. Examples of computing system 502 may include a server, a personal computer, a smartphone, and / or a tablet computing device. Additionally, the functions of computing system 502 may be performed via a cloud computing platform. In an embodiment, computing system 502 is configured with all necessary hardware and software to operate an analysis system or device (e.g., as discussed below with respect to a computer system). Figure 12 The structure and functionality of computing system 502 are discussed below with respect to an analytical device, such as analytical device 101, and with respect to a SiPM, such as SiPM 200, for illustrative purposes only. Computing system 502 is not limited in its functionality or operation to the specific hardware discussed herein and may be used to operate or interface with any suitable analytical device or SiPM.

[0048] The computing system 502 may include one or more processors 510 (also referred to interchangeably herein as processing unit 510, processor 510, one or more processors 510, or processor 510 for convenience), one or more storage devices 530, and / or other components. In other embodiments, the functionality of the processor may be performed by hardware (e.g., through the use of an application specific integrated circuit ("ASIC"), a programmable gate array ("PGA"), a field programmable gate array ("FPGA"), etc.), or any combination of hardware and software. The storage device 530 includes one or more non-transitory computer-readable storage media and / or non-transitory computer-readable storage devices of any type. Such computer-readable storage media or devices may store computer-readable program instructions for causing a processor (e.g., 510) to perform one or more methods described herein. Examples of computer-readable storage media or devices may include, but are not limited to, electronic storage devices, magnetic storage devices, optical storage devices, electromagnetic storage devices, semiconductor storage devices, or any suitable combination thereof, such as a computer disk, a hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), static random access memory (SRAM), portable compact disc read-only memory (CD-ROM), digital versatile disc (DVD), memory stick, but are not limited to these examples.

[0049] Processor 510 is programmed by one or more computer program instructions stored on storage device 530 and executable by processor 510. For example, processor 510 is programmed by SiPM input manager 512, SiPM output manager 514, temperature determination manager 516, protocol manager 518, data manager 520, and user interface manager 522. It should be understood that the functionality of the various managers discussed herein is representative and non-limiting. As used herein, for convenience, various "managers" are described as performing operations when, in fact, the managers program processor 510 (and therefore computing system 502) to perform the operations.

[0050] SiPM input manager 512 is a software protocol (e.g., a software module or library) operable on computing system 502. SiPM input manager 512 is configured to, for example, interface with SiPM 200 of an analysis device and provide it with control of power input. For example, SiPM input manager 512 may be configured to provide control of power input (e.g., operating voltage) provided by power supply 202 to SiPM 200. SiPM input manager 512 is further configured to communicate with various other managers and software protocols in order to perform its required functions during operation on computing system 502.

[0051] SiPM output manager 514 is a software protocol (e.g., a software module or library) operable on computing system 502. SiPM output manager 514 is configured to receive output data, for example, as measured by output monitor 203. For example, SiPM output manager 514 can be configured to provide control of output monitor 203 and receive measurements from output monitor 203. SiPM output manager 514 is further configured to communicate with various other managers and software protocols in order to perform its required functions in operation on computing system 502.

[0052] Temperature determination manager 516 is a software protocol (e.g., a software module or library) operable on computing system 502. Temperature determination manager 516 is configured to, for example, interact with and receive data from SiPM input manager 512 and SiPM output manager 514 to determine the temperature of the SiPM of the analysis device. Temperature determination manager 516 is further configured to communicate with various other managers and software protocols in operation on computing system 502 to perform its required functions.

[0053] SiPM input manager 512, SiPM output manager 514, and temperature determination manager 516 operate in conjunction to determine the SiPM temperature before, during, and / or after a sample analysis measurement to account for SiPM gain changes caused by temperature changes. Figure 5 The operation and specific steps, calculations, and algorithms used to determine and account for the temperature of the SiPM are explained in more detail.

[0054] The protocol manager 518 is a software protocol (e.g., a software module or library) operable on the computing system 502. The protocol manager 518 is configured to provide one or more control signals, for example, to the light detection device 301 controlled by the protocol manager 518. The control signals provided by the protocol manager 518 are configured to provide instructions necessary to operate the light detection device 301. The control signals may specify one or more operations to be performed by the light detection device 301. The control signals provided by the protocol manager 518 may be used to initiate and / or control any process described herein that the light detection device 301 is capable of performing.

[0055] In some embodiments, the protocol manager 518 may be configured to control one or more analysis devices, such as, for example, Figure 12 The protocol manager 518 may be configured to operate to control one or more analytical devices 101 to perform sample analysis. In such embodiments, the target object 350 may include, for example, a sample contained in a multi-well sample plate of the analytical device 101, as described below with respect to Figure 12Further discussion. The analysis device 101 can be controlled by a protocol manager 518 to obtain sample analysis measurement results for a plurality of test samples having an unknown amount of analyte (e.g., test samples disposed in a multi-well plate). The protocol manager 518 is operable to determine sample analysis signal values ​​corresponding to the plurality of test samples. The protocol manager 518 is configured to perform sample analysis to determine one or more sample analysis data sets. The sample analysis data sets may include information correlating the sample analysis signal values ​​with sample identification data. The sample identification data may include any suitable data for identifying the test sample, such as plate location.

[0056] In an embodiment, protocol manager 518 is configured to interact with, for example, SiPM input manager 512, SiPM output manager 514, and temperature determination manager 516 to determine the SiPM temperature before, during, and / or after a target object measurement to account for SiPM gain changes caused by temperature changes. Protocol manager 518 is further configured to communicate with various other managers and software protocols in operation on computing system 502 to perform its required functions.

[0057] The protocol manager 518 is further configured to Figure 6 、 9 10 manage, control and / or otherwise facilitate the functionality and operational performance of the light detection device 301.

[0058] Data manager 520 is a software protocol or software module operable on computing system 502. Data manager 520 is configured to access temperature determination data. Temperature determination data may include any and all data, models, correlations, etc. generated by computing system 502 or required by computing system 502 to determine SiPM temperature and consider analysis results based on SiPM temperature. In other embodiments, data manager 520 is configured to access various removable physical storage media that can store analysis data.

[0059] In other embodiments related to the control of the analytical devices 101, the data manager 520 is configured to, for example, access analytical data, such as sample analysis data and calibration analysis data for one or more analytical devices 101. The analytical data may include, for example, sample analysis data sets and calibration data sets, which may be obtained in near real time, which may be archived data and / or may be data extracts, as well as process information and process parameter information and any other information or data generated by or stored on the analytical device 101.

[0060] The data manager 520 can provide data to the user via the user interface manager 522. In embodiments, the data manager 520 is further configured to, for example, provide the user with access tools to manage and manipulate any and all data associated with the light detection device 301 (also referred to as analytical system data). For example, the data manager 520 can be configured to generate reports, organize system data, cross-reference system data, populate a database with system data, etc. In embodiments, the data manager 520 can provide data retention capabilities. The data manager 520 is further configured to receive and store any and all data collected and / or used by the light detection device 301. The data manager 520 is further configured to communicate with various other managers and software protocols in operation on the computing system 502 to perform its required functions.

[0061] The user interface manager 522 is a software protocol (e.g., a software module or library) that operates on the computing system 502. The user interface manager 522 is configured to provide a user interface to allow the user to interact with the computing system 50. The user interface manager 522 is configured to receive input from any user input source, including but not limited to a touch screen, keyboard, mouse, controller, joystick, voice control. The user interface manager 522 is configured to provide a user interface, such as a text-based user interface, a graphical user interface, or any other suitable user interface.

[0062] User interface manager 522 is configured to provide user authentication services. Users can be authenticated via, for example, a password, biometric scan (retinal scan, fingerprint, voiceprint, facial recognition, etc.), key fob, token access, and any other suitable user authentication method. User authentication services can be provided to control access to one or more analysis devices 101. User interface manager 522 is further configured to communicate with various other managers and software protocols in operation on computing system 502 to perform its required functions.

[0063] As discussed herein, the various managers can be implemented by any combination of computing devices. Although described herein as operating on a single computing system 502, the various managers and protocols described herein can operate in a distributed manner across multiple computing devices and / or in conjunction with cloud processing. Thus, without departing from the scope of this disclosure, the functionality of the various managers and software protocols described herein can occur in different physical locations. For example, aspects of the temperature determination manager can be implemented by a user on a different computing system after all data has been collected by the computing system associated with the analytical device.

[0064] Figure 5 1 is a flow chart illustrating an exemplary method for obtaining temperature-corrected analytical data. More specifically, Figure 5A process 600 is shown for acquiring temperature-corrected data using a temperature determination performed by a computer system when operating a SiPM in forward bias mode. Process 600 is performed by one or more computer systems, such as computer system 502, having one or more physical processors (e.g., 510) programmed with computer program instructions that, when executed by the one or more physical processors, cause the computer system to perform a method. Method 600 is further performed using one or more light detection devices 301, including, for example, analysis device 101, with one or more SiPM devices (e.g., SiPM 200). In an embodiment, process 600 is performed via one or more computing systems 502 and light detection device 301 with SiPM 200. One or more computing systems 502 may be associated with and / or in communication with light detection device 301. Although described with respect to the specific light detection devices, analysis devices, and SiPMs described herein, process 600 is not limited thereto and may be employed with any suitable analysis device and / or SiPM.

[0065] Computing system 502 represents an example of a hardware and software combination configured to perform process 600, but implementation of process 600 is not limited to the hardware and software combination of computing system 502. In other embodiments, process 600 may be implemented solely in hardware and / or firmware. As described above, additional details regarding each of the operations of the method can be understood based on the description of computing system 502. Process 600 is described with respect to specific hardware and software for illustrative purposes, but may be performed via any suitable hardware and / or software capable of performing the described actions or steps. The following aspects of process 600 may be performed by various managers and software protocols of the computing system. Specifically, the following aspects may be organized and executed based on an overall analysis program operated and managed by protocol manager 518.

[0066] In operation 602 of process 600, a SiPM (e.g., SiPM 200) is activated in a forward bias voltage mode. For example, SiPM input manager 512 is configured to control a power supply (e.g., 202) to activate the SiPM. The power supply is controlled to activate the SiPM in the forward bias voltage mode by applying, for example, a positive fixed current or a positive fixed voltage as a forward bias mode input signal to one or more PADs (e.g., 201) of the SiPM. When operating in the forward bias mode, photons incident on the SiPM (e.g., from ambient light) do not cause a change in the output current from the SiPM.

[0067] In operation 604, an output monitor (e.g., 203) and / or a SiPM output manager (e.g., 514) measures or detects a response to activation in the forward bias voltage mode. The output monitor may be configured to measure or determine an output current and / or output voltage induced in response to forward bias activation of the SiPM. The SiPM output manager is configured to control the output monitor to determine the output current or output voltage, thereby receiving the output current or output voltage measurement as a forward bias mode response signal.

[0068] In operation 606, the computer system determines the temperature of the SiPM based on the forward bias activation and the response to the activation. In forward bias mode, the PAD (e.g., 201) of the SiPM may operate according to the Shockley ideal diode equation, which includes a temperature dependency. The temperature determination manager 516 operates to determine the temperature of the SiPM based on the forward bias mode input signal and the forward bias mode response signal, as explained in detail below.

[0069] In an example, the current conducted through an ideal diode can be described by the Shockley\diode equation, Equation 1.

[0070] Equation 1:

[0071] In both forward and reverse bias configurations, the Shockley diode equation provides the diode current I D With voltage V D In Equation 1, q is the electron charge, k B is the Boltzmann constant, T is the absolute temperature of the diode junction (in Kelvin), and V D is the voltage across the diode. The ideality factor n, which typically varies between 1 and 2, represents the quality factor or emission coefficient of the diode in use. The ideality factor n takes into account the recombination of holes with free electrons in the depletion region and is a function of the semiconductor material and doping level. n is fixed for a given diode and can vary widely between corresponding diodes. The ideality factor n can be set to 1 in an "ideal" diode. S is the reverse bias saturation current given approximately by Equation 2.

[0072] Equation 2:

[0073] Equation 2 provides the reverse bias saturation current (I S ) and thus at least partially drives the diode current I DTemperature dependence of . In Equation 2, A is a constant factor that depends primarily on manufacturing factors such as the geometry of the semiconductor junction region and doping, and Eg is the semiconductor band gap. Semiconductor doping refers to the process of introducing impurities into the diode semiconductor to manipulate and / or modulate the electrical properties of the semiconductor (and therefore the diode). The band gap of silicon is approximately 1.17 eV at 0 K and 1.11 eV at 300 K. For diodes consistent with the embodiments herein, the band gap can be measured to be approximately 0.67 eV to 1.30 eV or between 1.10 eV and 1.30 eV. For the diode current I D Equation 1 is nonlinear. However, it is possible to identify operating parameters that produce approximately linear behavior over the useful temperature range.

[0074] Can be targeted at voltage V D Solve Equation 1 as shown in Equation 3.

[0075] Equation 3:

[0076] Although it is not straightforward to solve this equation to provide the D and I D The calculated value of T, but the constants A, n, Eg, q and k B Prior knowledge of V allows the use of numerical methods to D and I D A single measurement of determines T. Therefore, Equation 3 can be used to determine the temperature of a diode based on the voltage and current across it.

[0077] When applied to a SiPM device such as SiPM 200, Equation 3 may be modified to account for additional circuitry within the SiPM 200. For example, in an embodiment, SiPM 200 may include multiple quench resistors incorporated with PADS 201, as discussed above. For the purposes of the temperature analysis discussed herein, SiPM 200 and the multiple quench resistors may be modeled with a quench resistor 279 (R Q ) of a single diode 278, such as Figure 5 The voltage V across the diode is D cannot be measured directly and must be based on the voltage V measured across the SiPM 200 SIPM and the voltage across the quenching resistor 279 (V RQ ) is subtracted to determine. V RQ is the current I across the quenching resistor 279 D Multiply by the resistance of the quench resistor R Q Therefore, modifying Equation 3 yields Equation 4.

[0078] Equation 4:

[0079] Equation 4 was tested against data obtained experimentally from a SiPM device (Hamamatsu S13360-6075CS). 5 was obtained experimentally using n = 1.04, and R0 = 43.8 Ohms, and T, V D and I D Based on the measured values ​​of A, numerical methods were used to determine A. For this device, A was determined to be approximately 622 amperes. These values ​​are provided as examples for the particular SiPM device referenced. Different SiPM devices may have different values ​​for these terms. Individual SiPM devices of the same type may also have different values ​​for these terms based on manufacturing variations.

[0080] Figure 13 Results are presented for several trials using a Hamamatsu S13360-6025CS SiPM device, where temperature and voltage were measured at a constant current while the temperature was varied in a temperature-controlled chamber. Figure 13 Plotted graph 1301 demonstrates a correlation between voltage and temperature that is consistent across multiple runs, indicating the experimental validity of using measured voltage to determine SiPM temperature.

[0081] As discussed above, for a constant current, the voltage across the diode varies as a function of temperature. Therefore, once the materials and calibration constants of Equation 4 are selected, the temperature of the diode can be determined by maintaining a constant current across the diode using a power supply (e.g., 202) and measuring the voltage V generated by the supplied constant current. SIPM to measure.

[0082] Return now Figure 5 At operation 606, the computer system, such as the temperature determination manager 516, may determine the temperature of the SiPM by comparing the current provided by the power supply (e.g., 202) with the voltage measured by the output monitor (e.g., 203). The SiPM temperature may be determined based on a correlation between the voltage across the SiPM 200 (i.e., across the plurality of PADs (e.g., 201)) and the current through the SiPM 200 (i.e., through the plurality of PADs) in the forward bias mode.

[0083] In other embodiments, when the forward bias voltage is provided by a constant voltage source, the computer system may be configured to determine the resulting current based on measurements received from the output monitor. The provided voltage and measured current may then be used with Equation 4, as discussed above, to determine the diode temperature. Although Equation 4 may not be solvable for temperature T, a direct numerical solution may be employed to determine T based on appropriate values ​​of the constants and measured values ​​for the voltage and current. The values ​​of the constants discussed herein may vary depending on the type and arrangement of the equipment used and may be appropriately determined through experimentation with actual arrangements to be used for silicon photomultiplier devices. Figure 16 A graphical representation of the results of operation 606 is provided. Figure 16 Graph 1601 shows a comparison of the temperature during SiPM operation via conventional means (e.g., temperature sensor) compared to the temperature estimated by the methods and techniques discussed herein. Specifically, Figure 16 The SiPM temperature estimated via the voltage and current measurements associated with Equation 4 and operation 606 is shown. Figure 16 As shown in , the estimated and measured temperatures show a high degree of correspondence, indicating that the method of operation 606 is capable of accurately measuring the SiPM temperature.

[0084] In other embodiments, the SiPM temperature may be determined according to a two-point method. Operations 602 and 604 may each be performed twice, thereby determining the SiPM temperature at two different currents (I D＝ and I D> ) and measure the SiPM in forward bias mode at two different voltages (V D＝ and V D> ). The two activations can each be performed within a short time and with a small time delay to prevent any significant or substantial change in the diode temperature due to repeated activations.

[0085] After the activation and measurement at operations 602 and 604 , operation 606 may be performed to measure the temperature as follows.

[0086] Equation 5 defines the ratio of two current and voltage measurements based on Equation 1 above.

[0087] Equation 5:

[0088] item For temperatures within the expected range for SiPMs (e.g., below 40°C), this is much greater than 1. For example, using a Hamamatsu S13360-6075CS SiPM device at 29°C as an example, this yields approximately 1.3*10 9 Therefore, Equation 5 can be estimated based on Equation 6.

[0089] Equation 6:

[0090] Equation 6 can be simplified and rearranged to solve for T and obtain Equation 7.

[0091] Equation 7:

[0092] As discussed above, in some embodiments, V D It cannot be measured directly due to the diode structure containing the quenching resistor. In such cases, the resistance of the quenching resistor R Q Taking this term into account in Equation 7, we get Equation 8.

[0093] Equation 8:

[0094] Equation 8 provides a direct estimate of the SiPM temperature T based on the measurements of two different currents and two different voltages without the need for numerical solution methods.

[0095] The simplifying assumptions made to generate Equation 7 can lead to potential errors between the calculated and measured temperatures. The theoretical error for the temperature range between 250K and 350K is calculated using Equation 4 for selected temperatures in the 250K to 350K temperature range and four different currents I D Determine V at (10μA, 100μA, 1mA and 5mA) SIPM The expected value of V SIPM Value and I D The value is then used in Equation 8 to determine the two-point calculated temperature. The two-point calculated temperature and the selected temperature are then compared to the absolute temperature error. Figure 14 Shows the absolute error between the two-point calculated temperature and the selected temperature plotted against the selected temperature. Figure 14 As shown in graph 1401 of FIG, for operating temperatures below 350 K, the calculated error due to simplifying assumptions in the two-point method is less than 0.1° C. If the values ​​of the two currents are chosen to be 500 μA and 5 mA, the absolute error is reduced to less than 0.02° C. for temperatures below 350 K. At common operating temperatures, for example, below 313 K (40° C.), the absolute error is negligible. Figure 15 A graph is shown showing the amount of measurement error in K resulting from noise in the measured voltage. Figure 15 In the case of a CMOS, voltage measurements are subject to noise up to 20μV (peak to peak). Figure 15 As shown in graph 1501 of , the error remains below 0.2° C. in the presence of up to 20 μV (peak to peak) noise in the two measured voltages. Therefore, the two-point method represents an accurate method for determining the SiPM temperature within the expected operating temperature range below 350K.

[0096] In operation 608, after measuring the temperature, the power supply (e.g., 202) is controlled by the SiPM input manager (e.g., 512) to apply an operational reverse bias voltage to one or more PADs 201 of the SiPM 200 by applying an operational input signal. The SiPM thus enters an operational reverse bias mode. Applying the operational reverse bias voltage prepares the SiPM 200 to measure output photons from the target object 350. The operational reverse bias voltage to be applied is determined, for example, by a computer system based on the temperature dependence of the breakdown voltage so as to maintain a constant overvoltage between measurements. The gain G of the SiPM is given by Equation 8.

[0097] Equation 9:

[0098] In Equation 9, Cj is the total capacitance of the SiPM, and q is the elementary charge, and as discussed, V Br (breakdown voltage) is temperature dependent. By selecting the operating reverse bias voltage V according to the temperature associated with each specific measurement Bias , the computer system protocol manager can ensure that the gain G remains constant. Figure 7 A graph 701 showing the temperature dependence of the breakdown voltage in an example SiPM device (Hamamatsu S13360-3050CS) is shown. Thus, for example, the measured temperature from operation 606 and Equation 8 can be used to estimate or determine V Br The current value of , and the computer system protocol manager can therefore select the appropriate reverse bias voltage V Bias To maintain a constant gain G.

[0099] In other embodiments, the operating reverse bias voltage may be selected to maintain a constant reverse bias voltage (and thus a variable overvoltage) between light detection measurements.Thus, the protocol manager may select a predetermined operating reverse bias voltage and apply it to the SiPM.

[0100] In operation 610, the SiPM is exposed to photons, or more generally, to light (e.g., visible light, infrared light, ultraviolet light, etc.) reflected from, emitted by, or otherwise originating from a target object. Any process or operation that generates photons can be measured during operation 610. Exposing the SiPM to photons results in one or more photons impinging on the PAD of the SiPM. As described above with respect to Figure 2 and 3 As discussed, exposing the SiPM to one or more photons induces an analog output current response.

[0101] In embodiments involving analytical measurements, photons may be generated during an analytical process such as electrochemiluminescence. Any testing process that generates photons may be employed. For example, an analytical device may be configured to expose one or more samples within a sample well of a multi-well sample plate to an electric field that causes the solvent to generate photons, such as by electrochemiluminescence.

[0102] In operation 612, a computer system (e.g., 502) measures, receives, or otherwise determines an output current response from the SiPM in response to incident photons. The measured output current is integrated over time to determine a total amount of charge measured by the output monitor in response to the photon exposure. The relationship between the total amount of charge measured by the output monitor and the number of photons impinging on the SiPM is the gain G of the SiPM. The total charge measured by the output monitor can be divided by the gain to determine the number or amount of photons to which the SiPM was exposed during the exposure.

[0103] In embodiments where the overvoltage is maintained at a constant level, the gain is similarly maintained at a constant level. Thus, determining the light intensity (ie, the number of incident photons) can be achieved by dividing the measured total charge output by a predetermined constant gain G.

[0104] In other embodiments, where the operating reverse bias voltage is maintained at a predetermined constant level, the measured temperature can be used to determine the gain G according to a lookup table or equation specific to the SiPM device or photodiode being used. The determined gain G can then be used to determine the light intensity (i.e., the number of incident photons) by dividing the measured total charge output by the predetermined constant gain G.

[0105] In some embodiments, the process 600 of obtaining temperature-corrected analytical data may be performed according to the operations 602 through 612 described above in order. In other embodiments, the process 600 may include more or fewer operations than the operations 602 through 612 described above, may include the operations in a different order, and / or may include some operations multiple times.

[0106] For example, in some embodiments, the SiPM temperature can be measured after capturing light detection data. In other embodiments, the SiPM temperature can be measured before and after capturing light detection data. In these embodiments, the operating reverse bias voltage (rather than the overvoltage) can be maintained constant. The before and after measurements can be combined to estimate the temperature during the data capture operation. Based on the temperature at the time of measurement, the gain can be calculated. This gain can then be used to determine the incident light intensity.

[0107] The computer system then uses the recorded temperature of the SiPM to determine the intensity of the light (or photons) shining on the SiPM based on the temperature and the response signal. Knowing the recorded temperature immediately before (or after) the current detection allows accurate determination of the output light intensity based on the equation discussed above with respect to operation 606.

[0108] As described above, Equations 1-9 are used in an example method for determining SiPM temperature based on measurements made in forward bias voltage mode and adjusting or accounting for the determined temperature. In forward bias voltage mode, as described above, the SiPM can act as a thermometer. The methods discussed above and with respect to Equations 1-9 are provided merely as examples. In other embodiments, Equations 1-9 may be modified as needed based on the specific components of the SiPM device being used. For example, the use of different diodes and / or different circuitry within the SiPM may necessitate modifications to the selected equations. In other embodiments, as described above, correlations between operating circuit parameters and temperature and / or lookup tables providing correlations may be employed rather than specific equations. In embodiments, such correlations and / or lookup tables may be used to determine temperature based on forward bias voltage input and to account for temperature when performing SiPM measurements under reverse bias conditions. Such correlations and / or lookup tables may be established, for example, based on the equations described above and / or modified versions of these equations. In other embodiments, such correlations and / or lookup tables may be established, at least in part, experimentally.

[0109] Figure 8 A light detection device 801 is shown configured with a reference light source 830. The light detection device 801 includes a housing 810 and a silicon photomultiplier device (SiPM) 800 having a plurality of photoavalanche diodes (PADs) (not shown), a power supply 802, and an output monitor 803. The SiPM 800 is arranged to face one or more target objects 850 within the housing 810. The SiPM 800 is configured and arranged to receive light emitted from the target object 850 during a light detection measurement. The SiPM is arranged to receive input power (e.g., a voltage or current input) via the power supply 802 and to generate an output signal (e.g., a voltage or current output) that can be detected or monitored by the output monitor 803. Figure 8In the example of , analysis device 101 further includes a light source 830. Light source 830 is a device configured to selectively output light and may include, for example, one or more of an LED, a diode laser, a halogen lamp, an incandescent lamp, or a fluorescent bulb. Light source 830 may be a stable light source configured to selectively provide a precise and accurate light intensity. Light source 830 is arranged within housing 810 so that the predefined light intensity generated by light source 830 falls on or shines on SiPM 800. Light source 830 is configured and positioned within housing 810 so that it does not interfere with the optical path required for light to travel from target object 850 to SiPM. In some embodiments, light source 830 may be configured and arranged to be movable, for example, to be moved out of the optical path after being used to illuminate SiPM 800.

[0110] exist Figure 8 In the example of , light source 830 is configured to selectively illuminate SiPM 800 at a predetermined level (e.g., a predetermined intensity, a predetermined number of photons, a predetermined brightness, etc.). Because the amount and intensity of light impinging on SiPM 800 is predefined and known, the temperature of SiPM 800 can be determined from the voltage (e.g., input voltage), current (e.g., output current), and the known light intensity. As discussed above, the gain of SiPM 800 when operating at a fixed operating bias voltage depends on the temperature of SiPM 800. As discussed above, the gain of SiPM 800 can be determined based on the relationship between the known input light intensity and the output current. Because the gain at a particular bias voltage depends on the temperature, the temperature of the SiPM can be determined based on the gain and the input voltage. The correlation between the temperature and gain of specific SiPM hardware in use can be determined based on, for example, appropriate lookup tables, data table entries, and / or equations according to the specifications of the SiPM hardware in use. Therefore, the temperature of SiPM 800 can be determined by measuring the gain of SiPM 800.

[0111] Figure 9 A flow chart illustrating a method for obtaining temperature-corrected photodetector measurement data. More specifically, Figure 9A process 900 is shown for acquiring temperature-corrected data using a temperature determination made by a computing system (e.g., 502) when subjecting a SiPM to a known light intensity. Process 900 is performed by one or more computer systems, such as computer system 502, having one or more physical processors programmed with computer program instructions that, when executed by the one or more physical processors, cause the computer system to perform the method / process. In an embodiment, process 900 is further performed using one or more light detection devices (e.g., light detection device 801). In an embodiment, process 900 is performed via one or more computing systems 502 and light detection device 801. Although described with respect to the specific light detection devices and SiPMs described herein, process 900 is not limited thereto and may be employed with any suitable light detection device and / or SiPM, including analytical devices and systems.

[0112] Computing system 502 represents an example of a hardware and software combination configured to perform process 900, but implementation of process 900 is not limited to the hardware and software combination of computing system 502. In other embodiments, process 900 may be implemented solely in hardware and / or firmware. As described above, additional details regarding each of the operations of the method can be understood based on the description of computing system 502. Process 900 is described with respect to specific hardware and software for illustrative purposes, but may be performed via any suitable hardware and / or software capable of performing the described actions or steps. The following aspects of process 900 may be performed by various managers and software protocols of the computing system. Specifically, the following aspects may be organized and executed based on an overall analysis program operated and managed, for example, by protocol manager 518.

[0113] In operation 902, the SiPM is activated in a reverse bias voltage mode (also referred to as reverse bias mode). The SiPM can be activated in reverse bias mode via an operational input signal. For example, the SiPM input manager 512 is configured to control a power supply (e.g., 502) to activate the SiPM in reverse bias voltage mode by applying a reverse current or a negative voltage to the SiPM as the reverse bias input signal. In an embodiment, the SiPM can operate with a reverse bias voltage having a magnitude set below the breakdown voltage (i.e., below Geiger mode). Because the output response of the SiPM below Geiger mode is significantly reduced compared to the Geiger mode response, heating of the SiPM during exposure to a known light source / known light intensity is minimized or eliminated.

[0114] In operation 904, a known light source (e.g., 830) is used to provide a specified amount of light intensity (e.g., a precise number of photons) to the SiPM. The light source may be controlled, for example, by the protocol manager 518. Exposure to the light source produces a reverse bias output signal from the SiPM, such as an output current response.

[0115] In operation 906, the SiPM response to a predetermined or known light source is measured, and a reverse bias output signal of the SiPM is detected at an output monitor. The SiPM output manager is configured to control the output monitor to determine the reverse bias output signal and is configured to receive a measurement of the output current or output signal. The output signal is integrated over time to determine the total charge emitted by the SiPM in response to the photon exposure.

[0116] In operation 908, the temperature of the SiPM is determined. As discussed above, the gain of the SiPM varies depending on temperature. The gain of the SiPM can be determined or calculated based on the input reverse bias voltage, the measured total output charge, and a predetermined or known light intensity from the light source (i.e., according to Equation 8). The determined gain of the SiPM can then be compared with a predetermined and / or predefined correlation between gain and temperature for the SiPM to determine the temperature of the SiPM. Thus, the temperature determination manager (e.g., 516) can determine and / or calculate the gain of the SiPM based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity. The calculated and / or determined gain can then be used to determine the temperature of the SiPM.

[0117] In operation 910, after measuring or determining the temperature, the power supply is controlled by the SiPM input manager (e.g., 512) to apply an operational reverse bias voltage to the SiPM via an operational input signal. In an embodiment, the operational reverse bias voltage has a magnitude that exceeds the breakdown voltage and thus places the SiPM in an operational Geiger mode. The SiPM thus enters the operational reverse bias mode. Applying the operational reverse bias voltage prepares the SiPM to measure output photons from the target object. The operational reverse bias voltage to be applied is determined, for example, by a computer system based on the temperature dependence of the breakdown voltage so as to maintain a constant overvoltage between measurements. The operational reverse bias voltage V is selected based on the temperature associated with each particular measurement. Bias , the computer system protocol manager can ensure that the gain G remains constant.

[0118] In other embodiments, the operating reverse bias voltage may be selected to maintain a constant reverse bias voltage (and thus a variable overvoltage) between light detection measurements.Thus, the protocol manager may select a predetermined operating reverse bias voltage and apply it to the SiPM.

[0119] In operation 912, the SiPM is exposed to light, or more specifically, photons, generated during a measurement operation. In embodiments involving analytical measurements, the photons may be generated during an analytical process such as electrochemiluminescence. Any test process that generates photons may be employed. For example, the analytical device may be configured to expose one or more samples within a sample well of a multi-well sample plate to an electric field that causes the solvent to generate photons, such as by electrochemiluminescence. Exposing the SiPM to the photons causes the one or more photons to impinge on the PADS of the SiPM. As described above with respect to Figure 1 and 2 As discussed, exposing the SiPM to one or more photons induces an analog output current response.

[0120] In operation 914, an output monitor (e.g., 203) is controlled by the SiPM output manager to measure, receive, or otherwise determine a response signal from the SiPM, such as an output current response, in response to incident photons. A computer system (e.g., the SiPM output manager) receives the response signal and uses the SiPM's constant gain to determine the intensity of light (or photons) incident on the SiPM. Because the reverse bias voltage is selected to provide a constant overvoltage regardless of SiPM temperature, the SiPM's gain is maintained at a constant value. Therefore, the intensity of light incident on the SiPM (e.g., the number of photons) can be determined based on the constant gain. Thus, determining the light intensity (i.e., the number of incident photons) can be achieved by dividing the measured total charge output by a predetermined constant gain, G.

[0121] In other embodiments, where the operating reverse bias voltage is maintained at a predetermined constant level, the measured temperature can be used to determine the gain G according to a lookup table or equation specific to the SiPM device or photodiode being used. The determined gain G can then be used to determine the light intensity (i.e., the number of incident photons) by dividing the measured total charge output by the predetermined constant gain G. Measurement of the recorded temperature immediately before (or after) application of the operating reverse bias voltage allows for accurate determination of the output light intensity during the measurement.

[0122] In some embodiments, the process 900 for obtaining temperature-corrected analytical data may be performed according to the operations 902 through 912 described above in order. In other embodiments, the process 900 may include more or fewer operations than the operations 902 through 912 described above, may include the operations in a different order, and / or may include some operations multiple times.

[0123] For example, in some embodiments, the SiPM temperature can be measured after capturing light detection data. In other embodiments, the SiPM temperature can be measured before and after capturing light detection data. In these embodiments, the operating reverse bias voltage (rather than the overvoltage) is maintained constant. The before and after measurements can be combined to estimate the temperature during the data capture operation. Based on the temperature at the time of measurement, the gain can be calculated. This gain can then be used to determine the incident light intensity.

[0124] Figure 10 The flowchart shows a method for obtaining temperature-corrected light detection data. Figure 10 A process 1000 is shown for acquiring temperature-corrected light detection data using a temperature determination made by a computing system while operating a SiPM under reverse bias conditions. Process 1000 is performed by one or more computer systems, such as computer system 502, having one or more physical processors programmed with computer program instructions that, when executed by the one or more physical processors, cause the computer system to perform a method. Process 1000 is further performed using one or more light detection devices (e.g., light detection device 301 or light detection device 801). In an embodiment, process 1000 is performed via one or more computing systems 502 and light detection devices as described herein. Although described with respect to the specific analytical devices and SiPMs described herein, process 1000 is not limited thereto and may be employed with any suitable light detection device and / or SiPM device, including analytical devices and systems.

[0125] Computing system 502 represents an example of a hardware and software combination configured to perform process 1000, but implementation of process 1000 is not limited to the hardware and software combination of computing system 502. In other embodiments, process 1000 may be implemented solely in hardware and / or firmware. As described above, additional details regarding each of the operations of the method can be understood based on the description of computing system 502. Process 1000 is described with respect to specific hardware and software for illustrative purposes, but may be performed via any suitable hardware and / or software capable of performing the described actions or steps. The following aspects of process 1000 may be performed by various managers and software protocols of the computing system. Specifically, the following aspects may be organized and operated according to an overall analysis program operated and managed by a protocol manager.

[0126] In operation 1002, a SiPM is activated in a reverse bias mode below a breakdown voltage via a reverse bias input signal. A SiPM input manager is configured to control a power supply (e.g., 202 / 802) to activate the SiPM. Activating the SiPM in reverse bias mode includes providing a fixed bias voltage across one or more pads of the SiPM as the reverse bias input signal or reverse bias activation signal. The voltage is selected to have a magnitude below the reverse bias breakdown threshold to reduce sensitivity to any light incident on the SiPM within a light detection device.

[0127] In operation 1004, an output monitor (e.g., 203 / 803) detects a response (e.g., a response signal) to activation in reverse bias mode. The response signal to the reverse bias activation signal is measured by the output monitor controlled by the SiPM output manager. The response signal is, for example, a reverse bias saturation current generated according to a fixed bias voltage. The SiPM output manager is configured to receive a response signal measure of the saturation current from the output current monitor. The saturation current is the maximum current permitted to flow through the SiPM diode, for example, in saturation mode at a sub-breakdown reverse bias voltage. In embodiments, a SiPM diode operating in saturation mode may generate an extremely low reverse bias saturation current. Such low currents may require specialized hardware and / or software to obtain accurate measurements.

[0128] In operation 1006, the temperature determination manager (eg, 516) determines the temperature of the SiPM based on the relationship between the saturation current and the temperature. S It can be determined by Equation 9.

[0129] Equation 9:

[0130] In Equation 9, A is a constant for a given SiPM, and E g is the semiconductor band gap, k B is the Boltzmann constant, and T is the temperature in Kelvin. Therefore, the calculation system can calculate the saturation current I based on the measured saturation current S The temperature T is determined by the equation constants φ(t) and φ(t). In some embodiments, in reverse bias saturation mode, a leakage current separate from the reverse bias saturation current may also be generated. The amperage of the leakage current may vary depending on the diode characteristics. Accurate measurement of the reverse bias saturation current may require accounting for the leakage current.

[0131] In operation 1008, after determining or calculating the temperature T based on the measured saturation current, the SiPM input manager uses a power supply (e.g., 202) to apply an operational reverse bias voltage as an operational input signal to one or more PADs of the SiPM. The operational reverse bias voltage is a voltage having a magnitude exceeding the breakdown voltage of the SiPM. Applying the operational reverse bias voltage prepares the SiPM to measure output photons from the sample during the analysis procedure. The SiPM thus enters an operational reverse bias mode. The operational reverse bias voltage to be applied can be determined, for example, by a computer system based on the temperature dependence of the breakdown voltage in order to maintain a constant overvoltage between measurements. The operational reverse bias voltage V is selected based on the temperature associated with each particular measurement. Bias , the computer system protocol manager can ensure that the gain G remains constant.

[0132] In other embodiments, the operating reverse bias voltage can be selected to maintain a constant reverse bias voltage (and therefore a variable overvoltage) between photodetection measurements. Thus, the protocol manager can select a predetermined operating reverse bias voltage and apply it to the SiPM. In such embodiments, the gain G is not constant and must be determined or calculated for each measurement based on the overvoltage.

[0133] In operation 1010, the SiPM 200 is exposed to photons generated during a light detection process. Any testing process that generates photons may be used, including analytical processes. Exposing the SiPM to photons causes one or more photons to impinge on the PAD of the SiPM. Figure 2 and 3 As discussed, exposing the SiPM to one or more photons induces an analog output current response.

[0134] In operation 1012, the SiPM output manager measures, receives, or otherwise determines an analytical response signal from the SiPM in response to incident photons. A computer system (e.g., the SiPM output manager) receives the analytical response signal and uses the known constant gain of the SiPM to determine the intensity of light (or photons) impinging on the SiPM. Because the reverse bias voltage is selected to provide a constant overvoltage regardless of SiPM temperature, the gain of the SiPM is maintained at a constant value. Therefore, the intensity of light impinging on the SiPM (e.g., the number of photons) can be determined based on the constant gain. Therefore, determining the light intensity (i.e., the number of incident photons) can be achieved by dividing the measured total charge output by the predetermined constant gain G.

[0135] In other embodiments, where the operating reverse bias voltage is maintained at a predetermined constant level (resulting in a variable overvoltage), the measured temperature can be used to determine the variable overvoltage and, therefore, the gain G, according to appropriately stored data and / or appropriate equations as discussed herein. The determined gain G can then be used to determine the light intensity (i.e., the number of incident photons) by dividing the measured total charge output by the predetermined constant gain G. Measurement of the recorded temperature immediately before (or after) application of the operating reverse bias voltage permits accurate determination of the output light intensity during the measurement period.

[0136] In some embodiments, the process 1000 of acquiring temperature-corrected analytical data may be performed according to the operations 1002 through 1012 described above in order. In other embodiments, the process 1000 may include more or fewer operations than the operations 1002 through 1012 described above, may include the operations in a different order, and / or may include some operations multiple times.

[0137] For example, in some embodiments, the SiPM temperature can be measured after capturing light detection data. In other embodiments, the SiPM temperature can be measured before and after capturing light detection data. In these embodiments, the operating reverse bias voltage (rather than the overvoltage) is maintained constant. The before and after measurements can be combined to estimate the temperature during the data capture operation. Based on the temperature at the time of measurement, the gain can be calculated. This gain can then be used to determine the incident light intensity.

[0138] As mentioned above about Figure 10 As described above, various equations may be employed when determining SiPM temperature based on measurements taken in reverse bias voltage mode and adjusting or accounting for the determined temperature. In reverse bias voltage mode, as described above, the SiPM may function as a thermometer. The methods discussed above and with respect to the given equations are provided merely as examples. In other embodiments, the given equations may be modified as needed based on the specific components of the SiPM device being used. For example, the use of different diodes and / or different circuitry within the SiPM may necessitate modification of the selected equations. In other embodiments, as described above, correlations between operating circuit parameters and temperature and / or lookup tables providing correlations may be employed rather than specific equations. In embodiments, such correlations and / or lookup tables may be used to determine temperature based on a forward bias voltage input and to account for temperature when taking SiPM measurements under reverse bias conditions. Such correlations and / or lookup tables may be established, for example, based on the equations described above and / or modified versions of these equations. In other embodiments, such correlations and / or lookup tables may be established experimentally.

[0139] A potential problem when using a reverse bias voltage to determine the temperature of a SiPM is light sensitivity. Because a SiPM can be sensitive to light in reverse bias mode, ambient light shining on the SiPM during a reverse bias temperature measurement can skew the results. Figure 11 The figure shows that when subjected to 0.00nW / cm 2 to 10.00nW / cm 2 Graph 1100 of several diode voltage / current response curves 1101 to 1105 for incident light levels varying between . Figure 11 As shown in the figure, when subjected to 0.10nW / cm 2 and less than 0.10nW / cm 2 At 1.00 nW / cm2 (curves 1101, 1102, and 1103), the saturation current in saturation mode 1106 is stable and relatively insensitive to different levels of incident light. 2 and above 1.00nW / cm 2 At light levels of 100, 110, and 110, respectively (e.g., curves 1104 and 1105), the saturation current shows a higher sensitivity to incident light. Therefore, distortion due to potential light sensitivity during reverse bias mode temperature measurements can be reduced or mitigated by ensuring that the potential ambient light incident on the PAD of the SiPM remains below a certain level.

[0140] The foregoing represents embodiments applicable to temperature correction in any type of light detection device employing SiPMs. In other specific embodiments, the foregoing embodiments regarding temperature correction in light detection devices can be used in sample analysis devices employing SiPMs.

[0141] Analytical devices consistent with the present disclosure include a variety of analytical devices and / or formats. Analytical devices can include various components (analytical system components), for example, analytical modules, such as analytical plates, cartridges, multi-well analytical plates, reaction vessels, test tubes, cuvettes, flow cells, analytical chips, lateral flow devices, etc., with analytical reagents (which may include target reagents or other binding reagents) added or preloaded into the wells, chambers, or analytical areas of the analytical modules as the analysis progresses. These devices can employ a variety of analytical methods to measure the presence, amount, or activity of a target analyte.

[0142] An analytical device as described herein is configured to perform a sample analysis on one or more test samples, each having an unknown amount of analyte. Performing the sample analysis on the test sample generates a sample analysis signal value. The sample analysis signal value indicates the unknown amount of analyte associated therewith. In embodiments, multiple sample analysis signal values ​​may be obtained corresponding to a single test sample having an unknown amount of analyte. That is, the test sample may be measured multiple times.

[0143] The analytical methods disclosed herein can be performed manually, using automated techniques, or both. The automated techniques can be partially automated, such as one or more modular instruments, or a fully integrated automated instrument.

[0144] The analytical apparatus may comprise manual and / or automated systems (modular and fully integrated) on which the methods herein may be performed, and may comprise one or more of the following automated subsystems: a computer subsystem, which may include hardware (e.g., personal computers, laptops, hardware processors, optical disks, keyboards, displays, printers), software (e.g., programs such as drives, drive controllers, and data analyzers), and databases; liquid handling subsystems, such as sample handling and reagent handling, such as robotic pipetting heads, syringes, stirring devices, ultrasonic mixing devices, magnetic mixing devices; sample, reagent, and consumable storage and handling subsystems, such as robotic manipulators, tube or cap or foil perforation devices, cap removal devices, conveying devices such as linear and circular conveyors and robotic manipulators, tube racks, plate racks, slot racks, pipette tips Brackets, plate shakers; centrifuges, analytical reaction subsystems, such as fluid-based and consumable-based (e.g., tubes and multi-well plates); container and consumable washing subsystems, such as plate washing equipment; magnetic separators or magnetic particle concentrator subsystems, such as flow channels, tubes, and plate types; cell and particle detection, sorting, and separation subsystems, such as flow cytometers and Coulter counters; detection subsystems, such as colorimetric, turbidimetric, fluorescence, and ECL detectors; temperature control subsystems, such as air handling, air cooling, air heating, fans, blowers, water baths; waste subsystems, such as liquid and solid waste containers; globally unique identifier (GUI) detection subsystems, such as 1D and 2D barcode scanners, such as flat bed and stick types; sample identifier detection subsystems, such as 1D and 2D barcode scanners, such as flat bed and stick types. Analytical subsystems, such as chromatography systems, such as high performance liquid chromatography (HPLC), fast protein liquid chromatography (FPLC), and mass spectrometers can also be modular or fully integrated. An automation system consistent with embodiments of the present invention may be controlled and / or managed by a user interface manager.

[0145] The system or module that performs sample identification and preparation can be combined with the system or module that performs analysis and performs detection or performs both (or is adjacent to or is adjacent to or is mechanically connected or coupled with it).Multiple modular systems of the same kind can be combined to increase throughput.Modular systems can be combined with modules that perform other types of analysis, such as chemistry, biochemistry, and nucleic acid analysis.Automated systems can allow batch, continuous, random access, and instant workflows as well as single, medium, and high sample throughput.

[0146] Automated systems consistent with embodiments of the present invention are configured to perform one or more of the following functions: (a) moving consumables, such as plates, into, within, and out of the detection subsystem, (b) moving consumables between other subsystems, (c) storing consumables, (d) sample and reagent handling (e.g., suitable for mixing reagents and / or introducing reagents into consumables), (e) consumable agitation (e.g., for mixing reagents and / or increasing reaction rates), (f) consumable washing (e.g., washing plates and / or performing analytical wash steps (e.g., well aspiration)), and (g) measuring analytical signals (e.g., ECL signals) in flow channels or consumables (e.g., tubes or plates). The automated system can be configured to process individual tubes placed in racks, multi-well plates (e.g., 96 or 384 well plates).

[0147] In an embodiment, the automated system is a fully automated, modular, computerized system that performs in vitro quantitative and qualitative testing for a wide range of analytes and performs photometric analysis, ion selective electrode measurement, and / or electrochemiluminescence (ECL) analysis. In an embodiment, the automated system comprises the following hardware units: a control unit, a core unit, and at least one analysis module.

[0148] In embodiments, the control unit, which can be a local analytical computing system and / or a networked computing system, utilizes a graphical user interface to control all instrument functions and consists of a readout device, such as a monitor, input devices, such as a keyboard and mouse, and a personal computer using, for example, a Windows operating system. In embodiments, the core unit consists of several components that manage sample delivery to each assigned analysis module. The actual composition of the core unit depends on the configuration of the analysis modules, which can be configured by one skilled in the art using methods known in the art. In embodiments, the core unit includes at least a sampling unit and a rack rotor as primary components. A transfer line and a second rack rotor are possible expansions. Several other core unit components may include a sample rack loader / unloader, ports, a barcode reader (for racks and samples), a water supply, and a system interface port. In embodiments, the analysis module performs ECL analysis and includes a reagent area, a measurement area, a consumables area, and a pre-cleaning area.

[0149] Figure 12An embodiment of an analysis device 101 consistent with an embodiment of the present invention is depicted. The methods of this embodiment can be used in conjunction with a variety of analysis devices 101 and / or formats, as discussed above. Analysis device 101 represents one example of a platform suitable for employing the methods, systems, and devices disclosed herein. In embodiments, the analysis device 101 as disclosed herein includes one or more SiPM devices, such as SiPM 200 or SiPM 800, configured to capture optical signals from one or more samples during one or more analysis steps. Although a specific analysis device 101 may be disclosed herein, the embodiments herein can be used with any suitable analysis device employing a SiPM. Although a specific analysis device is depicted and described, the methods and systems described herein can be used with any suitable analysis device, system, or method.

[0150] In one embodiment, an analytical device 101 is provided for performing luminescence analysis in a multiwell plate. For example, an embodiment of the analytical device 101 includes a SiPM 200, which includes a PAD 201 (not shown), a power supply 202, and an output current monitor 203. The analytical device may further incorporate a computer system 502. Furthermore, the analytical device 101 may further include a plate handling subsystem 405, including a light-tight enclosure 410 that provides a light-free environment in which luminescence measurements can be performed. The light-tight enclosure 410 may enclose a plate holder 420, which is actuated by a plate holder actuator 450 and configured to hold the multiwell plate 400.

[0151] The plate carrier 420 is configured for xy translation when actuated by a plate carrier actuator 450, which may include, for example, a stepper motor, a linear drive, and / or any other suitable electromechanical actuator. The plate carrier actuator 450 may be actuated or controlled by the computer system 502 (e.g., via the protocol manager 518) to translate the plate carrier 420 so as to properly position the multi-well plate 400 relative to the SiPM 200 for light detection measurements.

[0152] The SiPM 200 is arranged to face one or more samples within the light-tight housing 410 of the analytical device 101. The one or more samples may be contained in, for example, Figure 124. The multiwell plate 400 is disposed on a plate carrier 420 that is actuated by a plate carrier actuator 450. The SiPM 200 is configured and arranged to receive light (e.g., visible light) emitted from a sample in the multiwell plate 400 during performance of an analysis (e.g., electrochemiluminescence (ECL) analysis, fluorescence analysis, and / or chemiluminescence analysis). The SiPM 200 is arranged to receive a voltage input via a power supply 202 (e.g., to activate the SiPM 200 in a forward bias mode or in a reverse bias mode) and to generate an output signal that can be detected or monitored by an output monitor 203, as discussed above.

[0153] During analysis execution, the SiPM receives or is exposed to light emitted from one of the samples contained in the multiwell plate 400. To achieve high throughput, multiple samples may be excited sequentially to induce photon emission. Consequently, the SiPM 200 receives continuous emission from the samples in the multiwell plate 400. The power supplied to the SiPM 200 and the conduction of high current cause the SiPM 200 to heat up. As the SiPM 200 is repeatedly operated to acquire data from each of the multiple samples in the multiwell plate 400, the temperature of the SiPM 200 may increase throughout the execution of the analysis. Because higher-intensity light sources result in greater current output, the temperature increase may be proportional to or otherwise related to the intensity of the light source.

[0154] The methods and systems described herein (e.g., Figure 6 、 9 10) to account for, calibrate, and / or otherwise compensate for temperature increases in SiPM 200. Each of these methods can be adapted to be performed by or in conjunction with an analysis system or device. The various analysis steps and tasks can be included in the previously discussed steps of the aforementioned methods suitable for performing sample analysis.

[0155] For example, as discussed above, each of methods 600, 900, and 1000 may include an operation of exposing a SiPM to incident photons. In methods consistent with analytical systems and devices, the incident photons may be generated via an analytical step, such as, for example, electrochemiluminescence (ECL) analysis, fluorescence analysis, and / or chemiluminescence analysis. Thus, each of the methods 600, 900, and 1000 discussed above may include an analytical operation configured to cause photon emission from an analytical sample. The emitted photons may then be captured by a SiPM associated with an analytical device / system in the aforementioned photon exposure step.

[0156] In another example, the operations of methods 600, 900, and 1000 above may further include operations for determining an analytical value based on the calculated, measured, and / or determined light intensity values. As discussed above, light intensity values ​​may be calculated, measured, and / or determined based on the SiPM response to incident photons. The light intensity values ​​may, in turn, be used to determine an analytical value, such as a value associated with the performance of an analysis on a sample. Methods 600, 900, and 1000 may include analytical operations configured to cause the generation of photons based on the analytical operation. Measuring these photons via the SiPM may be used to calculate, determine, compute, and / or measure an analytical value associated with the analytical operation.

[0157] Method 600, 900 and 1000 may further include any and all operations necessary for the measurement, calculation, determination and tabulation of the execution and analysis results of analysis. Each of these operations can be controlled, promoted and / or managed by a computer system associated with an analytical device or system and / or by the personnel of an operating analytical device or system. Such operations may include but are not limited to sample deposition, reagent and reactant processing and distribution, plate movement and transfer operation, application of electric field, current and voltage, causing electrochemical reaction, etc. The example of an apparatus consistent with an embodiment of the present invention and the operation performed by such an apparatus can be found, for example, as disclosed in U.S. application case No. PCT / US2016 / 043755, filed on July 22, 2016, U.S. application case No. PCT / US2017 / 014360, filed on January 20, 2017, and U.S. application case No. 63 / 025,344, filed on May 15, 2020. In other examples, high throughput instruments, such as those disclosed in U.S. Application No. PCT / US2016 / 026242, filed April 6, 2016, and U.S. Application No. PCT / US2019 / 032567, filed May 16, 2019. Other examples of instruments consistent with embodiments of the present invention include, for example, U.S. Application No. PCT / US02 / 20570, filed June 29, 2002, U.S. Application No. PCT / US2006 / 049049, filed December 21, 2006, U.S. Application No. PCT / US2014 / 010182, filed January 3, 2014, and U.S. Application No. 62 / 954,961, filed December 30, 2019. SiPMs consistent with embodiments of the present invention can be used in any analytical format involving light detection, such as assays employing measurements based on absorbance, fluorescence, chemiluminescence, electrochemiluminescence, light scattering, etc. SiPMs can be used for light detection in, for example, immunoassays or combined assays such as nucleic acid assays, chemical assays, enzyme assays, and others. For example, the methods and apparatus disclosed herein can be consistent with assays and devices disclosed in, for example, U.S. Application No. PCT / US20 / 30754, filed April 30, 2020, U.S. Application No. PCT / US2014 / 026010, filed March 13, 2014, U.S. Application No. PCT / US2014 / 022948, filed March 11, 2014, U.S. Application No. PCT / US2015 / 03092, filed May 15, 2015, and U.S. Application No. PCT / US2014 / 010016, filed January 2, 2014. Each of the prior applications discussed in this paragraph is incorporated herein by reference in its entirety. Additional embodiments consistent with the present disclosure include the following.

[0158] Embodiment 1 is a method for obtaining temperature-corrected photometric data through a silicon photomultiplier device, the method comprising: activating the silicon photomultiplier device in a forward bias mode through a forward bias mode input signal; measuring a forward bias mode response signal through at least one processor; determining the temperature of the silicon photomultiplier device based on the forward bias mode input signal and the forward bias mode response signal through at least one processor; determining an operating reverse bias mode voltage through at least one processor; activating the silicon photomultiplier device in an operating reverse bias mode through an operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining the intensity of the light based on the output signal and the gain of the silicon photomultiplier device.

[0159] Embodiment 2 includes the features of embodiment 1, and further includes determining the operating reverse bias mode voltage based on a temperature required to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

[0160] Embodiment 3 includes the features of embodiment 1 or 2, and further includes determining the silicon photomultiplier device gain as a function of temperature and an operating reverse bias mode voltage.

[0161] Embodiment 4 includes the features of embodiments 1-3, wherein activating the silicon photomultiplier device includes applying a fixed current as a forward bias mode input signal.

[0162] Embodiment 5 includes the features of embodiments 1 to 4, wherein activating the silicon photomultiplier device in the forward bias mode includes applying a fixed voltage as the forward bias mode input signal.

[0163] Embodiment 6 includes the features of embodiments 1 to 5, further comprising determining the temperature of the silicon photomultiplier device by exploiting the correlation between diode voltage and diode current in a forward bias mode.

[0164] Embodiment 7 includes the features of embodiments 1 to 6, wherein determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light and determining a second temperature after exposing the silicon photomultiplier device to light.

[0165] Embodiment 8 includes the features of embodiments 1 to 7, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: activating the sample well to induce a luminescent reaction in the at least one sample to produce light.

[0166] Embodiment 9 includes the features of embodiments 1 to 8, wherein the luminescent reaction comprises a chemiluminescent reaction.

[0167] Embodiment 10 includes the features of embodiments 1 to 9, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

[0168] Embodiment 11 includes the features of embodiments 1 to 10, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising determining the analytical measurement result based on the intensity of the light.

[0169] Embodiment 12 includes the features of embodiments 1 to 11, wherein the forward bias mode input signal is a first forward bias mode input signal, and the forward bias mode response signal is a first forward bias mode response signal, the method further comprising: activating the silicon photomultiplier device in forward bias mode via a second forward bias mode input signal, measuring the second forward bias mode response signal via at least one processor, and wherein determining the temperature of the silicon photomultiplier device based on the forward bias mode input signal and the forward bias mode response signal comprises determining the temperature of the silicon photomultiplier device based on the first forward bias mode input signal, the first forward bias mode response signal, the second forward bias mode input signal, and the second forward bias mode response signal.

[0170] Embodiment 13 includes a method for obtaining temperature-corrected photometric data through a silicon photomultiplier device, the method comprising: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; measuring the reverse bias mode saturation current via at least one processor; determining the temperature of the silicon photomultiplier device based on the reverse bias mode saturation current via at least one processor; determining an operating reverse bias mode voltage via at least one processor; activating the silicon photomultiplier device in an operating reverse bias mode via the operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining the intensity of the light based on the temperature of the silicon photomultiplier device and the gain of the silicon photomultiplier device.

[0171] Embodiment 14 includes the features of embodiment 13, further comprising determining the operating reverse bias mode voltage based on a temperature to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

[0172] Embodiment 15 includes the features of embodiment 13 or 14, further comprising determining the silicon photomultiplier device gain based on temperature.

[0173] Embodiment 16 includes the features of embodiments 13-15, wherein activating the silicon photomultiplier device includes applying a fixed bias voltage as the reverse bias input signal to cause the silicon photomultiplier device to operate in a saturation mode.

[0174] Embodiment 17 includes the features of embodiments 13 to 16, wherein determining the temperature of the silicon photomultiplier device is performed by exploiting a correlation between temperature and reverse bias mode saturation current in reverse bias mode.

[0175] Embodiment 18 includes the features of embodiments 13-17, wherein determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light and determining a second temperature after exposing the silicon photomultiplier device to light.

[0176] Embodiment 19 includes the features of embodiments 13 to 18, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: activating the sample well to induce a luminescent reaction in the at least one sample to produce light.

[0177] Embodiment 20 includes the features of embodiments 13 to 19, wherein the luminescent reaction comprises a chemiluminescent reaction.

[0178] Embodiment 21 includes the features of embodiments 13-20, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

[0179] Embodiment 22 includes the features of embodiments 13 to 21, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: determining the analytical measurement result based on the intensity of the light.

[0180] Embodiment 23 includes a method for obtaining temperature-corrected photometric data through a silicon photomultiplier device, the method comprising: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining the temperature of the silicon photomultiplier device based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; determining an operating reverse bias mode voltage via at least one processor; activating the silicon photomultiplier device in an operating reverse bias mode via the operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring the output signal from the silicon photomultiplier device; and determining the intensity of the light based on the temperature of the silicon photomultiplier device and the gain of the silicon photomultiplier device.

[0181] Embodiment 24 includes the features of embodiment 23, further comprising determining the operating reverse bias mode voltage based on a temperature to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

[0182] Embodiment 25 includes the features of embodiment 23 or 24, further comprising determining the silicon photomultiplier device gain as a function of temperature and an operating reverse bias mode voltage.

[0183] Embodiment 26 includes the features of embodiments 23-25, wherein activating the silicon photomultiplier device includes applying a fixed current as the reverse bias input signal.

[0184] Embodiment 27 includes the features of embodiments 23-26, wherein activating the silicon photomultiplier device includes applying a fixed voltage as a reverse bias input signal.

[0185] Embodiment 28 includes the features of embodiments 23-27, wherein determining the temperature of the silicon photomultiplier device comprises: determining a gain of the silicon photomultiplier device when exposed to a predetermined light intensity; and determining the temperature of the silicon photomultiplier device based on the gain.

[0186] Embodiment 29 includes the features of embodiments 23-28, wherein determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light and determining a second temperature after exposing the silicon photomultiplier device to light.

[0187] Embodiment 30 includes the features of embodiments 23 to 29, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: activating the sample well to induce a luminescent reaction in the at least one sample to produce light.

[0188] Embodiment 31 includes the features of embodiments 23 to 30, wherein the luminescent reaction comprises a chemiluminescent reaction.

[0189] Embodiment 32 includes the features of embodiments 23 to 31, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

[0190] Embodiment 33 includes the features of embodiments 23 to 32, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: determining the analytical measurement result based on the intensity of the light.

[0191] Example 34 includes a method for determining the temperature of a silicon photomultiplier device, the method comprising: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a gain of the silicon photomultiplier device based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity when exposed to the predetermined light intensity; and determining the temperature of the silicon photomultiplier device based on the gain.

[0192] Embodiment 35 includes the features of embodiment 34, wherein activating the silicon photomultiplier device includes applying a fixed current as a reverse bias input signal.

[0193] Embodiment 36 includes the features of embodiments 34-35, wherein activating the silicon photomultiplier device includes applying a fixed voltage as a reverse bias input signal.

[0194] Embodiment 37 includes the features of embodiments 34-36, further comprising activating the silicon photomultiplier device in a reverse bias mode of operation to obtain analytical measurements based on temperature.

[0195] Embodiment 38 includes a system for obtaining temperature-corrected photometric data, the system comprising: a silicon photomultiplier device comprising a plurality of photoavalanche diodes; and at least one processor configured with software instructions for: activating the silicon photomultiplier device in a forward bias mode via a forward bias mode input signal; measuring, by the at least one processor, a forward bias mode response signal; determining, by the at least one processor, a temperature of the silicon photomultiplier device based on the forward bias mode input signal and the forward bias mode response signal; determining, by the at least one processor, an operating reverse bias mode voltage; activating the silicon photomultiplier device in an operating reverse bias mode via the operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light based on the output signal and a gain of the silicon photomultiplier device.

[0196] Embodiment 39 includes the features of embodiment 38, wherein the at least one processor is further configured to determine the operational reverse bias mode voltage based on a temperature required to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

[0197] Embodiment 40 includes the features of embodiments 38-39, wherein the at least one processor is further configured to determine the silicon photomultiplier device gain as a function of temperature.

[0198] Embodiment 41 includes the features of embodiments 38-40, wherein activating the silicon photomultiplier device includes applying a fixed current as a forward bias mode input signal.

[0199] Embodiment 42 includes the features of embodiments 38 to 41, wherein activating the silicon photomultiplier device in a forward bias mode includes applying a fixed voltage as a forward bias mode input signal.

[0200] Embodiment 43 includes the features of embodiments 38 to 42, wherein the at least one processor is further configured to determine the temperature of the silicon photomultiplier device by exploiting a correlation between diode voltage and diode current in a forward bias mode.

[0201] Embodiment 44 includes the features of embodiments 38-43, wherein determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light and determining a second temperature after exposing the silicon photomultiplier device to light.

[0202] Embodiment 45 includes the features of embodiments 38 to 44, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: activating the sample well to induce electrochemiluminescence in the at least one sample to produce light.

[0203] Embodiment 46 includes the features of embodiments 38 to 45, wherein the luminescent reaction comprises a chemiluminescent reaction.

[0204] Embodiment 47 includes the features of embodiments 38 to 46, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

[0205] Embodiment 48 includes the features of embodiments 38 to 47, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: determining the analytical measurement result based on the intensity of the light.

[0206] Embodiment 49 includes a system for obtaining temperature-corrected photometric data, the system comprising: a silicon photomultiplier device comprising a plurality of photoavalanche diodes; and at least one processor configured with software instructions for: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; measuring, by the at least one processor, a reverse bias mode saturation current; determining, by the at least one processor, a temperature of the silicon photomultiplier device based on the reverse bias mode saturation current; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light based on the temperature of the silicon photomultiplier device and the gain of the silicon photomultiplier device.

[0207] Embodiment 50 includes the features of embodiment 49, wherein the at least one processor is further configured to determine the operational reverse bias mode voltage based on a temperature for maintaining a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

[0208] Embodiment 51 includes the features of embodiments 49-50, wherein the at least one processor is further configured to determine the silicon photomultiplier device gain as a function of temperature.

[0209] Embodiment 52 includes the features of embodiments 49-51, wherein activating the silicon photomultiplier device includes applying a fixed bias voltage as a reverse bias input signal to cause the silicon photomultiplier device to operate in a saturation mode.

[0210] Embodiment 53 includes the features of embodiments 49 to 52, wherein determining the temperature of the silicon photomultiplier device is performed by exploiting a correlation between temperature and reverse bias mode saturation current in reverse bias mode.

[0211] Embodiment 54 includes the features of embodiments 49-53, wherein determining the temperature comprises determining a first temperature before exposing the silicon photomultiplier device to the light and determining a second temperature after exposing the silicon photomultiplier device to the light.

[0212] Embodiment 55 includes the features of embodiments 49 to 54, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: activating the sample well to induce electrochemiluminescence in the at least one sample to produce light.

[0213] Embodiment 56 includes the features of embodiments 49 to 55, wherein the luminescent reaction comprises a chemiluminescent reaction.

[0214] Embodiment 57 includes the features of embodiments 49-56, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

[0215] Embodiment 58 includes the features of embodiments 49 to 57, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: determining the analytical measurement result based on the intensity of the light.

[0216] Embodiment 59 includes a system for obtaining temperature-corrected photometric data, the system comprising: a silicon photomultiplier device comprising a plurality of photoavalanche diodes; and at least one processor configured with software instructions for: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a temperature of the silicon photomultiplier device based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; determining an operating reverse bias mode voltage via the at least one processor; activating the silicon photomultiplier device in an operating reverse bias mode via the operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light based on the temperature of the silicon photomultiplier device and the gain of the silicon photomultiplier device.

[0217] Embodiment 60 includes the features of embodiment 59, wherein the at least one processor is further configured to determine the operational reverse bias mode voltage based on a temperature for maintaining a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

[0218] Embodiment 61 includes the features of embodiments 59-60, wherein the at least one processor is further configured to determine the silicon photomultiplier device gain as a function of temperature.

[0219] Embodiment 62 includes the features of embodiments 59-61, wherein activating the silicon photomultiplier device includes applying a fixed current as a reverse bias input signal.

[0220] Embodiment 63 includes the features of embodiments 59-62, wherein activating the silicon photomultiplier device includes applying a fixed voltage as a reverse bias input signal.

[0221] Embodiment 64 includes the features of embodiments 59-63, wherein determining the temperature of the silicon photomultiplier device comprises: determining a gain of the silicon photomultiplier device when exposed to a predetermined light intensity; and determining the temperature of the silicon photomultiplier device based on the gain.

[0222] Embodiment 65 includes the features of embodiments 59-64, wherein determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light and determining a second temperature after exposing the silicon photomultiplier device to light.

[0223] Example 66 includes the features of Examples 59 to 65, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: activating the sample well to induce electrochemiluminescence in the at least one sample to produce light.

[0224] Embodiment 67 includes the features of embodiments 59 to 66, wherein the luminescent reaction comprises a chemiluminescent reaction.

[0225] Embodiment 68 includes the features of embodiments 59-67, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

[0226] Embodiment 69 includes the features of embodiments 59 to 68, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: determining the analytical measurement result based on the intensity of the light.

[0227] Embodiment 70 comprises a system for obtaining temperature-corrected photometric data, the system comprising: a silicon photomultiplier device comprising a plurality of photoavalanche diodes; and at least one processor configured with software instructions for: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a gain of the silicon photomultiplier device when exposed to the predetermined light intensity based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; and determining a temperature of the silicon photomultiplier device based on the gain.

[0228] Embodiment 71 includes the features of embodiment 70, wherein activating the silicon photomultiplier device comprises applying a fixed current as a reverse bias input signal.

[0229] Embodiment 72 includes the features of embodiments 70-71, wherein activating the silicon photomultiplier device includes applying a fixed voltage as a reverse bias input signal.

[0230] Embodiment 73 includes the features of embodiments 70-72, wherein the at least one processor is further configured for activating the silicon photomultiplier device in a reverse bias mode of operation to obtain analytical measurements based on temperature.

[0231] Embodiment 74 includes a non-transitory computer-readable medium configured with software instructions to cause a method to be performed by at least one processor, the method comprising: activating a silicon photomultiplier device in a forward bias mode by a forward bias mode input signal; measuring a forward bias mode response signal by at least one processor; determining a temperature of the silicon photomultiplier device based on the forward bias mode input signal and the forward bias mode response signal by at least one processor; determining an operating reverse bias mode voltage by at least one processor; activating the silicon photomultiplier device in an operating reverse bias mode by the operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light based on the output signal and a gain of the silicon photomultiplier device.

[0232] Embodiment 75 includes the features of embodiment 74, wherein the method further comprises determining the operational reverse bias mode voltage based on a temperature required to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

[0233] Embodiment 76 includes the features of embodiments 74-75, wherein the method further comprises determining the silicon photomultiplier device gain based on temperature.

[0234] Embodiment 77 includes the features of embodiments 74-76, wherein activating the silicon photomultiplier device includes applying a fixed current as a forward bias mode input signal.

[0235] Embodiment 78 includes the features of embodiments 74-77, wherein activating the silicon photomultiplier device in a forward bias mode includes applying a fixed voltage as a forward bias mode input signal.

[0236] Embodiment 79 includes the features of embodiments 74 to 78, wherein the method further comprises determining the temperature of the silicon photomultiplier device by exploiting a correlation between diode voltage and diode current in a forward bias mode.

[0237] Embodiment 80 includes the features of embodiments 74-79, wherein determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light and determining a second temperature after exposing the silicon photomultiplier device to light.

[0238] Embodiment 81 includes the features of embodiments 74 to 80, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: activating the sample well to induce electrochemiluminescence in the at least one sample to produce light.

[0239] Embodiment 82 includes the features of embodiments 74 to 81, wherein the luminescent reaction comprises a chemiluminescent reaction.

[0240] Embodiment 83 includes the features of embodiments 74-82, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

[0241] Embodiment 84 includes the features of embodiments 74 to 83, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: determining the analytical measurement result based on the intensity of the light.

[0242] Embodiment 85 includes a non-transitory computer-readable medium configured with software instructions to cause a method to be performed by at least one processor, the method comprising: activating a silicon photomultiplier device in a reverse bias mode by a reverse bias input signal; measuring a reverse bias mode saturation current by at least one processor; determining a temperature of the silicon photomultiplier device based on the reverse bias mode saturation current by at least one processor; determining an operating reverse bias mode voltage by at least one processor; activating the silicon photomultiplier device in an operating reverse bias mode by operating the reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light based on the temperature of the silicon photomultiplier device and the gain of the silicon photomultiplier device.

[0243] Embodiment 86 includes the features of embodiment 85, wherein the method further comprises determining the operating reverse bias mode voltage based on a temperature to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

[0244] Embodiment 87 includes the features of embodiments 85-86, wherein the method further comprises determining the silicon photomultiplier device gain as a function of temperature.

[0245] Embodiment 88 includes the features of embodiments 85-87, wherein activating the silicon photomultiplier device includes applying a fixed bias voltage as a reverse bias input signal to cause the silicon photomultiplier device to operate in a saturation mode.

[0246] Embodiment 89 includes the features of embodiments 85 to 88, wherein determining the temperature of the silicon photomultiplier device is performed by exploiting a correlation between temperature and reverse bias mode saturation current in reverse bias mode.

[0247] Embodiment 90 includes the features of embodiments 85-89, wherein determining the temperature comprises determining a first temperature before exposing the silicon photomultiplier device to light and determining a second temperature after exposing the silicon photomultiplier device to light.

[0248] Embodiment 91 includes the features of embodiments 85 to 90, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: activating the sample well to induce electrochemiluminescence in the at least one sample to produce light.

[0249] Embodiment 92 includes the features of embodiments 85 to 91, wherein the luminescent reaction comprises a chemiluminescent reaction.

[0250] Embodiment 93 includes the features of embodiments 85 to 92, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

[0251] Embodiment 94 includes the features of embodiments 85 to 93, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, and the method further comprises: determining the analytical measurement result based on the intensity of the light.

[0252] Embodiment 95 includes a non-transitory computer-readable medium configured with software instructions to cause a method to be performed by at least one processor, the method comprising: a silicon photomultiplier device comprising a plurality of photoavalanche diodes; at least one processor configured with software instructions for: activating the silicon photomultiplier device in a reverse bias mode by a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a temperature of the silicon photomultiplier device based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; determining, by the at least one processor, an operating reverse bias mode voltage; activating the silicon photomultiplier device in an operating reverse bias mode by the operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of light based on the temperature of the silicon photomultiplier device and a gain of the silicon photomultiplier device.

[0253] Embodiment 96 includes the features of embodiment 95, wherein the method further comprises determining the operating reverse bias mode voltage based on a temperature to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

[0254] Embodiment 97 includes the features of embodiment 95 or 96, wherein the method further comprises determining the silicon photomultiplier device gain as a function of temperature and an operating reverse bias mode voltage.

[0255] Embodiment 98 includes the features of embodiments 95-97, wherein activating the silicon photomultiplier device includes applying a fixed current as a reverse bias input signal.

[0256] Embodiment 99 includes the features of embodiments 95-98, wherein activating the silicon photomultiplier device includes applying a fixed voltage as a reverse bias input signal.

[0257] Embodiment 100 includes the features of embodiments 95-99, wherein determining the temperature of the silicon photomultiplier device comprises: determining a gain of the silicon photomultiplier device when exposed to a predetermined light intensity; and determining the temperature of the silicon photomultiplier device based on the gain.

[0258] Embodiment 101 includes the features of embodiments 95-100, wherein determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light and determining a second temperature after exposing the silicon photomultiplier device to light.

[0259] Embodiment 102 includes the features of embodiments 95 to 101, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: activating the sample well to induce electrochemiluminescence in the at least one sample to produce light.

[0260] Embodiment 103 includes the features of embodiments 95 to 102, wherein the luminescent reaction comprises a chemiluminescent reaction.

[0261] Embodiment 104 includes the features of embodiments 95 to 103, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

[0262] Embodiment 105 includes the features of embodiments 95 to 103, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: determining the analytical measurement result based on the intensity of the light.

[0263] Embodiment 106 includes a non-transitory computer-readable medium configured with software instructions to cause a method to be performed by at least one processor, the method comprising: a silicon photomultiplier device comprising a plurality of photoavalanche diodes; at least one processor configured with software instructions for: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a gain of the silicon photomultiplier device based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity when exposed to the predetermined light intensity; and determining a temperature of the silicon photomultiplier device based on the gain.

[0264] Embodiment 107 includes the features of embodiment 106, wherein activating the silicon photomultiplier device includes applying a fixed current as a reverse bias input signal.

[0265] Embodiment 108 includes the features of embodiments 106-107, wherein activating the silicon photomultiplier device includes applying a fixed voltage as a reverse bias input signal.

[0266] Embodiment 109 includes the features of embodiments 106-108, further comprising activating the silicon photomultiplier device in a reverse bias mode of operation to obtain analytical measurements based on temperature.

[0267] It will be readily apparent to one of ordinary skill in the art that other suitable modifications and adaptations may be made to the methods and applications described herein without departing from the scope of any of the embodiments. It should be understood that although certain embodiments have been illustrated and described herein, the claims are not limited to the specific form or arrangement of the parts described and shown. In this specification, illustrative embodiments have been disclosed and although specific terms are employed, they are used only in a general and descriptive sense and not for restrictive purposes. Modifications and variations of the embodiments are possible in light of the above teachings. Therefore, it should be understood that the embodiments may be implemented in a manner other than that specifically described. All publications, patents, and patent applications mentioned in this specification are incorporated herein by reference to the same extent as if each individual publication, patent, or patent application was specifically and individually indicated to be incorporated by reference.

Claims

1. A method for obtaining temperature-corrected photometric data using a silicon photomultiplier device, the method comprising: include: activating the silicon photomultiplier device in a forward bias mode via a forward bias mode input signal; measuring, by at least one processor, a forward bias mode response signal; determining, by the at least one processor, a temperature of the silicon photomultiplier device based on the forward bias mode input signal and the forward bias mode response signal; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and The intensity of the light is determined based on the output signal and the gain of the silicon photomultiplier device.

2. The method of claim 1, further comprising determining the operational reverse bias mode voltage based on a temperature required to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

3. The method of claim 1, further comprising determining the silicon photomultiplier device gain as a function of the temperature and the operational reverse bias mode voltage. 4 . The method of claim 1 , wherein activating the silicon photomultiplier device comprises applying a fixed current as the forward bias mode input signal. 5 . The method of claim 1 , wherein activating the silicon photomultiplier device in the forward bias mode comprises applying a fixed voltage as the forward bias mode input signal.

6. The method of claim 1, further comprising determining the temperature of the silicon photomultiplier device by exploiting a correlation between diode voltage and diode current in the forward bias mode. 7 . The method of claim 1 , wherein determining the temperature comprises determining a first temperature before exposing the silicon photomultiplier device to the light and determining a second temperature after exposing the silicon photomultiplier device to the light.

8. The method according to claim 1, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: include: The sample wells are activated to induce a luminescent reaction in the at least one sample to produce the light.

9. The method of claim 8, wherein the luminescent reaction comprises a chemiluminescent reaction.

10. The method of claim 9, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

11. The method according to claim 1, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: include: An analytical measurement result is determined based on the intensity of the light.

12. The method according to claim 1, wherein the forward bias mode input signal is a first forward bias mode input signal, and the forward bias mode response signal is a first forward bias mode response signal, the method further comprising: include: activating the silicon photomultiplier device in the forward bias mode via a second forward bias mode input signal; measuring, by at least one processor, a second forward bias mode response signal; and Wherein determining the temperature of the silicon photomultiplier device according to the forward bias mode input signal and the forward bias mode response signal includes determining the temperature of the silicon photomultiplier device according to the first forward bias mode input signal, the first forward bias mode response signal, the second forward bias mode input signal and the second forward bias mode response signal.

13. A method for obtaining temperature-corrected photometric data using a silicon photomultiplier device, the method include: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; measuring, by at least one processor, a reverse bias mode saturation current; determining, by the at least one processor, a temperature of the silicon photomultiplier device based on the reverse bias mode saturation current; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and The intensity of the light is determined based on the temperature of the silicon photomultiplier device and a silicon photomultiplier device gain.

14. The method of claim 13, further comprising determining the operational reverse bias mode voltage based on a temperature to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

15. The method of claim 14, further comprising determining the silicon photomultiplier device gain as a function of the temperature.

16. The method of claim 14, wherein activating the silicon photomultiplier device comprises applying a fixed bias voltage as the reverse bias input signal to cause the silicon photomultiplier device to operate in a saturation mode.

17. The method of claim 14, wherein determining the temperature of the silicon photomultiplier device is performed by exploiting a correlation between the temperature and the reverse bias mode saturation current in the reverse bias mode.

18. The method of claim 14, wherein determining the temperature comprises determining a first temperature before exposing the silicon photomultiplier device to the light and determining a second temperature after exposing the silicon photomultiplier device to the light.

19. The method according to claim 14, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: include: The sample wells are activated to induce a luminescent reaction in the at least one sample to produce the light.

20. The method of claim 19, wherein the luminescent reaction comprises a chemiluminescent reaction.

21. The method of claim 20, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

22. The method of claim 14, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: include: An analytical measurement result is determined based on the intensity of the light.

23. A method for obtaining temperature-corrected photometric data using a silicon photomultiplier device, the method include: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a temperature of the silicon photomultiplier device based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; determining, by at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and The intensity of the light is determined based on the temperature of the silicon photomultiplier device and a silicon photomultiplier device gain.

24. The method of claim 23, further comprising determining the operational reverse bias mode voltage based on a temperature to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

25. The method of claim 23, further comprising determining the silicon photomultiplier device gain as a function of the temperature.

26. The method of claim 23, wherein activating the silicon photomultiplier device comprises applying a fixed current as the reverse bias input signal.

27. The method of claim 23, wherein activating the silicon photomultiplier device comprises applying a fixed voltage as the reverse bias input signal.

28. The method of claim 23, wherein determining the temperature of the silicon photomultiplier device comprises: determining a gain of the silicon photomultiplier device when exposed to the predetermined light intensity; and The temperature of the silicon photomultiplier device is determined based on the gain.

29. The method of claim 23, wherein determining the temperature comprises determining a first temperature before exposing the silicon photomultiplier device to the light and determining a second temperature after exposing the silicon photomultiplier device to the light.

30. The method of claim 23, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: include: The sample wells are activated to induce a luminescent reaction in the at least one sample to produce the light.

31. The method of claim 30, wherein the luminescent reaction comprises a chemiluminescent reaction.

32. The method of claim 31, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

33. The method of claim 23, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: include: An analytical measurement result is determined based on the intensity of the light.

34. A method for determining the temperature of a silicon photomultiplier device, the method include: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a gain of the silicon photomultiplier device when exposed to the predetermined light intensity based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; and The temperature of the silicon photomultiplier device is determined based on the gain.

35. The method of claim 34, wherein activating the silicon photomultiplier device comprises applying a fixed current as the reverse bias input signal.

36. The method of claim 34, wherein activating the silicon photomultiplier device comprises applying a fixed voltage as the reverse bias input signal.

37. The method of claim 34, further comprising activating the silicon photomultiplier device in a reverse bias mode of operation to obtain analytical measurements based on the temperature.

38. A system for obtaining temperature-corrected photometric data, the system include: A silicon photomultiplier device comprising a plurality of photoavalanche diodes; and At least one processor configured with software instructions to: activating the silicon photomultiplier device in a forward bias mode via a forward bias mode input signal; measuring, by the at least one processor, a forward bias mode response signal; determining, by the at least one processor, a temperature of the silicon photomultiplier device based on the forward bias mode input signal and the forward bias mode response signal; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and The intensity of the light is determined based on the output signal and the gain of the silicon photomultiplier device.

39. The system of claim 38, wherein the at least one processor is further configured to determine the operational reverse bias mode voltage based on a temperature required to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

40. The system of claim 38, wherein the at least one processor is further configured to determine the silicon photomultiplier device gain as a function of the temperature and the operational reverse bias mode voltage.

41. The system of claim 38, wherein activating the silicon photomultiplier device comprises applying a fixed current as the forward bias mode input signal.

42. The system of claim 38, wherein activating the silicon photomultiplier device in the forward bias mode comprises applying a fixed voltage as the forward bias mode input signal.

43. The system of claim 38, wherein the at least one processor is further configured for determining the temperature of the silicon photomultiplier device by exploiting a correlation between diode voltage and diode current in the forward bias mode.

44. The system of claim 38, wherein determining the temperature comprises determining a first temperature before exposing the silicon photomultiplier device to the light and determining a second temperature after exposing the silicon photomultiplier device to the light.

45. The system of claim 38, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the at least one processor being further configured to: The sample wells are activated to induce a luminescent reaction in the at least one sample to produce the light.

46. ​​The system of claim 45, wherein the luminescent reaction comprises a chemiluminescent reaction.

47. The system of claim 46, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

48. The system of claim 38, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the at least one processor being further configured to: An analytical measurement result is determined based on the intensity of the light.

49. A system for obtaining temperature-corrected photometric data, the system include: A silicon photomultiplier device comprising a plurality of photoavalanche diodes; and At least one processor configured with software instructions to: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; measuring, by at least one processor, a reverse bias mode saturation current; determining, by the at least one processor, a temperature of the silicon photomultiplier device based on the reverse bias mode saturation current; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and The intensity of the light is determined based on the temperature of the silicon photomultiplier device and a silicon photomultiplier device gain.

50. The system of claim 49, wherein the at least one processor is further configured to determine the operational reverse bias mode voltage based on a temperature to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

51. The system of claim 49, wherein the at least one processor is further configured to determine the silicon photomultiplier device gain as a function of the temperature.

52. The system of claim 49, wherein activating the silicon photomultiplier device comprises applying a fixed bias voltage as the reverse bias input signal to cause the silicon photomultiplier device to operate in a saturation mode.

53. The system of claim 49, wherein determining the temperature of the silicon photomultiplier device is performed by exploiting a correlation between the temperature and the reverse bias mode saturation current in the reverse bias mode.

54. The system of claim 49, wherein determining the temperature comprises determining a first temperature before exposing the silicon photomultiplier device to the light and determining a second temperature after exposing the silicon photomultiplier device to the light.

55. The system of claim 49, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the at least one processor being further configured to: The sample wells are activated to induce a luminescent reaction in the at least one sample to produce the light.

56. The system of claim 55, wherein the luminescent reaction comprises a chemiluminescent reaction.

57. The system of claim 56, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

58. The system of claim 49, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the at least one processor being further configured to: An analytical measurement result is determined based on the intensity of the light.

59. A system for obtaining temperature-corrected photometric data, the system include: A silicon photomultiplier device comprising a plurality of photoavalanche diodes; and At least one processor configured with software instructions to: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a temperature of the silicon photomultiplier device based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and The intensity of the light is determined based on the temperature of the silicon photomultiplier device and a silicon photomultiplier device gain.

60. The system of claim 59, wherein the at least one processor is further configured for determining the operational reverse bias mode voltage based on a temperature to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

61. The system of claim 59, wherein the at least one processor is further configured to determine the silicon photomultiplier device gain as a function of the temperature.

62. The system of claim 59, wherein activating the silicon photomultiplier device comprises applying a fixed current as the reverse bias input signal.

63. The system of claim 59, wherein activating the silicon photomultiplier device comprises applying a fixed voltage as the reverse bias input signal.

64. The system of claim 59, wherein determining the temperature of the silicon photomultiplier device comprises: determining a gain of the silicon photomultiplier device when exposed to the predetermined light intensity; and The temperature of the silicon photomultiplier device is determined based on the gain.

65. The system of claim 59, wherein determining the temperature comprises determining a first temperature before exposing the silicon photomultiplier device to the light and determining a second temperature after exposing the silicon photomultiplier device to the light.

66. The system of claim 59, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the at least one processor being further configured to: The sample wells are activated to induce a luminescent reaction in the at least one sample to produce the light.

67. The system of claim 66, wherein the luminescent reaction comprises a chemiluminescent reaction.

68. The system of claim 67, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

69. The system of claim 59, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the at least one processor being further configured to: An analytical measurement result is determined based on the intensity of the light.

70. A system for obtaining temperature-corrected photometric data, the system include: A silicon photomultiplier device comprising a plurality of photoavalanche diodes; and At least one processor configured with software instructions to: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a gain of the silicon photomultiplier device when exposed to the predetermined light intensity based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; and A temperature of the silicon photomultiplier device is determined based on the gain.

71. The system of claim 70, wherein activating the silicon photomultiplier device comprises applying a fixed current as the reverse bias input signal.

72. The system of claim 70, wherein activating the silicon photomultiplier device comprises applying a fixed voltage as the reverse bias input signal.

73. The system of claim 70, wherein the at least one processor is further configured for activating the silicon photomultiplier device in a reverse bias mode of operation to obtain analytical measurements based on the temperature.

74. A non-transitory computer readable medium configured with software instructions to cause at least one processor to perform a method, the method include: activating the silicon photomultiplier device in a forward bias mode via a forward bias mode input signal; measuring, by at least one processor, a forward bias mode response signal; determining, by the at least one processor, a temperature of the silicon photomultiplier device based on the forward bias mode input signal and the forward bias mode response signal; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and The intensity of the light is determined based on the output signal and the gain of the silicon photomultiplier device.

75. The non-transitory computer readable medium of claim 74, wherein the method further comprises determining the operating reverse bias mode voltage based on a temperature required to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

76. The non-transitory computer readable medium of claim 74, wherein the method further comprises determining the silicon photomultiplier device gain as a function of the temperature and the operational reverse bias mode voltage.

77. The non-transitory computer-readable medium of claim 74, wherein activating the silicon photomultiplier device comprises applying a fixed current as the forward bias mode input signal.

78. The non-transitory computer-readable medium of claim 74, wherein activating the silicon photomultiplier device in the forward bias mode comprises applying a fixed voltage as the forward bias mode input signal.

79. The non-transitory computer readable medium of claim 74, wherein the method further comprises determining the temperature of the silicon photomultiplier device by exploiting a correlation between diode voltage and diode current in the forward bias mode.

80. The non-transitory computer-readable medium of claim 74, wherein determining the temperature comprises determining a first temperature before exposing the silicon photomultiplier device to the light and determining a second temperature after exposing the silicon photomultiplier device to the light.

81. The non-transitory computer-readable medium of claim 74, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: include: The sample wells are activated to induce a luminescent reaction in the at least one sample to produce the light.

82. The non-transitory computer-readable medium of claim 81, wherein the luminescent reaction comprises a chemiluminescent reaction.

83. The non-transitory computer-readable medium of claim 82, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

84. The non-transitory computer-readable medium of claim 74, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: include: An analytical measurement result is determined based on the intensity of the light.

85. A non-transitory computer readable medium configured with software instructions to cause at least one processor to perform a method, the method include: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; measuring, by at least one processor, a reverse bias mode saturation current; determining, by the at least one processor, a temperature of the silicon photomultiplier device based on the reverse bias mode saturation current; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and An intensity of the light is determined by a silicon photomultiplier device gain according to the temperature of the silicon photomultiplier device.

86. The non-transitory computer readable medium of claim 85, wherein the method further comprises determining the operating reverse bias mode voltage as a function of a temperature to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

87. The non-transitory computer-readable medium of claim 85, wherein the method further comprises determining the silicon photomultiplier device gain as a function of the temperature.

88. The non-transitory computer-readable medium of claim 85, wherein activating the silicon photomultiplier device comprises applying a fixed bias voltage as the reverse bias input signal to cause the silicon photomultiplier device to operate in a saturation mode.

89. The non-transitory computer readable medium of claim 85, wherein determining the temperature of the silicon photomultiplier device is performed by employing a correlation between the temperature and the reverse bias mode saturation current in the reverse bias mode.

90. The non-transitory computer-readable medium of claim 85, wherein determining the temperature comprises determining a first temperature before exposing the silicon photomultiplier device to the light and determining a second temperature after exposing the silicon photomultiplier device to the light.

91. The non-transitory computer-readable medium of claim 85, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: include: The sample wells are activated to induce a luminescent reaction in the at least one sample to produce the light.

92. The non-transitory computer-readable medium of claim 91, wherein the luminescent reaction comprises a chemiluminescent reaction.

93. The non-transitory computer-readable medium of claim 92, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

94. The non-transitory computer-readable medium of claim 85, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: include: An analytical measurement result is determined based on the intensity of the light.

95. A non-transitory computer readable medium configured with software instructions to cause at least one processor to perform a method, the method include: A silicon photomultiplier device comprising a plurality of photoavalanche diodes; At least one processor configured with software instructions to: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a temperature of the silicon photomultiplier device based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; determining, by the at least one processor, an operational reverse bias mode voltage; activating the silicon photomultiplier device in an operational reverse bias mode via the operational reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and The intensity of the light is determined based on the temperature of the silicon photomultiplier device and a silicon photomultiplier device gain.

96. The non-transitory computer readable medium of claim 95, wherein the method further comprises determining the operating reverse bias mode voltage as a function of a temperature to maintain a predetermined silicon photomultiplier device gain in the silicon photomultiplier device.

97. The non-transitory computer readable medium of claim 95, wherein the method further comprises determining the silicon photomultiplier device gain as a function of the temperature.

98. The non-transitory computer-readable medium of claim 95, wherein activating the silicon photomultiplier device comprises applying a fixed current as the reverse bias input signal.

99. The non-transitory computer-readable medium of claim 95, wherein activating the silicon photomultiplier device comprises applying a fixed voltage as the reverse bias input signal.

100. The non-transitory computer-readable medium of claim 95, wherein determining the temperature of the silicon photomultiplier device comprises: determining a gain of the silicon photomultiplier device when exposed to the predetermined light intensity; and The temperature of the silicon photomultiplier device is determined based on the gain.

101. The non-transitory computer-readable medium of claim 95, wherein determining the temperature comprises determining a first temperature before exposing the silicon photomultiplier device to the light and determining a second temperature after exposing the silicon photomultiplier device to the light.

102. The non-transitory computer-readable medium of claim 95, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: include: The sample wells are activated to induce a luminescent reaction in the at least one sample to produce the light.

103. The non-transitory computer-readable medium of claim 102, wherein the luminescent reaction comprises a chemiluminescent reaction.

104. The non-transitory computer-readable medium of claim 103, wherein the chemiluminescent reaction comprises an electrochemiluminescent reaction.

105. The non-transitory computer-readable medium of claim 95, wherein the target object comprises at least one sample contained in a sample well of a multi-well plate, the method further comprising: include: An analytical measurement result is determined based on the intensity of the light.

106. A non-transitory computer readable medium configured with software instructions to cause at least one processor to perform a method, the method include: A silicon photomultiplier device comprising a plurality of photoavalanche diodes; At least one processor configured with software instructions to: activating the silicon photomultiplier device in a reverse bias mode via a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining a gain of the silicon photomultiplier device when exposed to the predetermined light intensity based on the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; and A temperature of the silicon photomultiplier device is determined based on the gain.

107. The non-transitory computer-readable medium of claim 106, wherein activating the silicon photomultiplier device comprises applying a fixed current as the reverse bias input signal.

108. The non-transitory computer-readable medium of claim 106, wherein activating the silicon photomultiplier device comprises applying a fixed voltage as the reverse bias input signal.

109. The non-transitory computer readable medium of claim 106, further comprising activating the silicon photomultiplier device in a reverse bias mode of operation to obtain analytical measurements based on the temperature.

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