Method for processing abnormal insulation of electrode assembly in deposition film forming and deposition film forming equipment

Abstract

The invention discloses a processing method for insulation abnormity of an electrode assembly in deposition film forming and deposition film forming equipment, the processing method comprises an abnormity processing step, and the abnormity processing step comprises the following steps: controlling a carrier to enter a reaction cavity, and connecting the carrier with a radio frequency power supply; introducing a first process gas into the reaction cavity; and controlling to start the radio frequency power supply, and ionizing the first process gas so as to at least deposit an insulating film on the surface of the support rod. According to the processing method, online insulation repairing of the supporting rod can be completed without disassembling the supporting rod, the labor intensity is low, the repairing speed is high, the risk that the reaction cavity is polluted can be reduced, and the production efficiency and the yield of equipment can be improved.

Description

Technical Field

[0001] The present invention relates to the field of deposition film forming technology, and in particular to a method for processing insulation abnormality of an electrode assembly during deposition film forming and a deposition film forming device. Background Art

[0002] The deposition film forming equipment using the plasma enhanced (PE) process includes a radio frequency power supply, a reactor and an electrode assembly. A reaction chamber is formed inside the reactor, the electrode assembly is installed in the reaction chamber, and the radio frequency power supply and the electrode assembly are connected.

[0003] Please refer to Figure 1 , Figure 1 It is a schematic diagram of the structure of an electrode assembly of a deposition film forming device in the related art.

[0004] In related technologies, such as Figure 1 As shown, the electrode assembly includes two spaced support rods 011 and two spaced electrode rods 012, both support rods 011 are made of insulating material, and insulating sleeves are set on the outside of the two electrode rods 012. Both support rods 011 are provided with electrode holders 013, and the two electrode rods 012 are connected to the two electrode holders 013 respectively. When performing deposition film forming operations, a carrier carrying a substrate such as a silicon wafer can be transported to the reaction chamber and can be supported on the two support rods 011. At the same time, the carrier can be connected to the two electrode holders 013 to establish an electrical connection relationship between the radio frequency power supply and the carrier. Then, the reaction gas is introduced into the reaction chamber, and the radio frequency power supply is started, and the deposition film can be performed on the surface of the substrate.

[0005] However, when preparing the conductive film on the surface of the substrate, as the process continues, the insulating parts in the electrode assembly (such as the supporting rod 011, the insulating sleeve on the outside of the electrode rod 012, etc.) will gradually be covered by the conductive film, which will change the insulating properties of the insulating parts in the electrode assembly itself, and the conductive film covering the insulating parts in the electrode assembly, especially the conductive film on the surface of the two supporting rods 011, will produce arcing and discharge with the adjacent carrier, thereby causing abnormal production conditions and seriously affecting the stable operation of the equipment and the quality of the deposited film.

[0006] In view of this, the conventional treatment method is to disassemble the electrode assembly, and then grind the parts of the electrode assembly that need to be insulated, such as the support rod 011 and the insulating sleeve outside the electrode rod 012, to remove the conductive film, and then install the electrode assembly. However, this treatment method is cumbersome and requires relatively frequent disassembly and assembly, which is time-consuming and seriously affects the continuity and stability of production. In addition, the disassembly and assembly and grinding process may also cause damage to parts such as the electrode assembly, which increases operating costs.

[0007] Therefore, how to provide a solution to overcome or alleviate the above-mentioned defects is still a technical problem that needs to be solved urgently by those skilled in the art. Summary of the invention

[0008] The objective of the present invention is to provide a method for processing insulation abnormalities of an electrode assembly during deposition film formation and a deposition film forming device, wherein the processing method does not require disassembly of the electrode assembly, that is, it can complete online insulation repair of at least a support rod in the electrode assembly, has low labor intensity, fast repair speed, can reduce the risk of contamination of the reaction chamber, and is beneficial to improving the production efficiency and yield rate of the equipment.

[0009] In order to solve the above technical problems, the present invention provides a method for processing insulation abnormalities of electrode assemblies during deposition film formation, the processing method includes an abnormality processing step, and the abnormality processing step includes: controlling a carrier to enter a reaction chamber, and connecting the carrier and a radio frequency power supply; introducing a first process gas into the reaction chamber; controlling the start-up of the radio frequency power supply, and ionizing the first process gas to deposit an insulating film on at least the surface of a support rod.

[0010] The above-mentioned treatment method is a reasonable application of the existing deposition film forming function of the deposition film forming equipment. It does not need to introduce other equipment, and can directly use the deposition film forming equipment itself to complete the self-repair of the support rod, which is equivalent to adding a self-repair mode to the deposition film forming equipment. The invention is ingenious. The repair process does not require the support rod to be disassembled and polished, that is, the insulation repair of the support rod can be completed online. In this way, the labor intensity can be greatly reduced, the manpower allocation can be reduced, and the time for insulation repair can be shortened, and the production efficiency can be improved. At the same time, it can also reduce the damage caused by frequent disassembly and assembly of parts such as support rods, which can reduce the operating cost of the equipment. In addition, the risk of contamination in the process chamber can be greatly reduced. Accordingly, when the equipment is put back into use, the time for saturation treatment can also be relatively short, so that the equipment can be put into use in a shorter time, which can greatly improve production efficiency and ensure the yield rate.

[0011] Optionally, the insulating film includes at least one of a silicon nitride film, a silicon oxide film, and a silicon nitride oxide film.

[0012] Optionally, the processing method further includes an abnormality detection step before the abnormality processing step, and the abnormality detection step includes: obtaining first characteristic information of the RF power supply; determining whether the first characteristic information meets a first set condition, and if so, controlling the output of abnormality confirmation information.

[0013] Optionally, the first characteristic information includes a unit arc number, where the unit arc number is the number of arcs in one of the reactors per unit time, and the first setting condition is that the unit arc number is greater than a set number.

[0014] Optionally, the first characteristic information includes load impedance information of the RF power supply, and the first setting condition is that the load impedance information is less than a set value.

[0015] Optionally, the processing method further includes an abnormality identification step between the abnormality handling step and the abnormality detection step, and the abnormality identification step includes: after receiving the abnormality confirmation information, determining whether there is hardware damage in the deposition film forming equipment, and if not, executing the abnormality handling step.

[0016] Optionally, the processing method further includes an abnormality resolution judgment step, and the abnormality resolution judgment step includes: obtaining second characteristic information of the RF power supply; judging whether the second characteristic information meets a second set condition, and if so, controlling the output of abnormality resolution information.

[0017] Optionally, the second characteristic information includes load impedance information of the RF power supply, and the second setting condition is that the load impedance information is within a set range.

[0018] Optionally, before acquiring the second characteristic information of the RF power source, the abnormality resolution judgment step further includes: introducing a second process gas into the reaction chamber.

[0019] The present invention also provides a deposition film forming device, including a reactor, an electrode assembly, a radio frequency power supply, a carrier and a controller, wherein the reactor has a reaction chamber, the electrode assembly includes a support rod and an electrode component, at least a portion of the support rod is installed in the reaction chamber, the carrier can be supported by the support rod, the carrier is connected to the radio frequency power supply through the electrode component, and the controller includes a processor and a memory storing a computer program, and when the processor executes the computer program, the method for processing insulation abnormality of the electrode assembly in deposition film forming as described above is implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 A schematic diagram of the structure of an electrode assembly of a deposition film forming device in the related art;

[0021] Figure 2 A simplified structural diagram of the deposition film forming equipment provided by the present invention;

[0022] Figure 3 A schematic flow chart of abnormality handling steps of a method for handling abnormal insulation of an electrode assembly during deposition film formation provided by the present invention;

[0023] Figure 4 A schematic flow chart of an abnormality detection step of a method for processing insulation abnormality of an electrode assembly during deposition film formation provided by the present invention;

[0024] Figure 5A schematic flow chart of an abnormality identification step and an abnormality processing step of a method for processing insulation abnormality of an electrode assembly during deposition film formation provided by the present invention;

[0025] Figure 6 A schematic flow chart of an abnormality resolution judging step and an abnormality handling step of a method for handling abnormal insulation of an electrode assembly during deposition film formation provided by the present invention;

[0026] Figure 7 A schematic flow chart of another abnormality resolution judging step and abnormality processing step of the method for processing abnormal insulation of an electrode assembly during deposition film formation provided by the present invention;

[0027] Figure 8 The present invention is a schematic flow chart of a method for treating insulation abnormality of an electrode assembly during deposition film formation.

[0028] Figure 1 Reference numerals in the figures:

[0029] 011-support rod; 012-electrode rod; 013-electrode holder.

[0030] Figure 2 Reference numerals in the figures:

[0031] 100 - reactor; 110 - reaction chamber; 200 - carrier; 300 - radio frequency power supply; 400 - controller; 500 - electrode assembly; 510 - support component; 520 - electrode component. DETAILED DESCRIPTION

[0032] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0033] In the embodiments of the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features.

[0034] In the description of the embodiments of the present invention, the terms "comprises", "includes" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0035] Please refer to Figure 2 , Figure 2 This is a simplified structural diagram of the deposition film forming equipment provided by the present invention.

[0036] The embodiment of the present invention provides a deposition film forming device, which can specifically use a plasma enhanced (PE) process such as a plasma enhanced chemical vapor deposition (PECVD) process or a plasma enhanced atomic layer deposition (PEALD) process to deposit a film on the surface of a substrate such as a silicon wafer. Figure 2 As shown, the deposition film forming equipment includes a reactor 100 , a carrier 200 , a radio frequency power supply 300 , a controller 400 and an electrode assembly 500 .

[0037] The reactor 100 is a tubular structure, etc. The reactor 100 may have a reaction chamber 110, and the reaction chamber 110 is used to provide a reaction place for processing the substrate.

[0038] The electrode assembly 500 may include a support component 510 and an electrode component 520. The support component 510 may be at least partially installed in the reaction chamber 110. In the embodiment of the present invention, the support component 510 may include two support rods (not shown in the figure), the two support rods may be arranged at intervals, and both support rods may be made of insulating materials, such as ceramics, silicon carbide, etc., which are not limited here.

[0039] The carrier 200 may be a graphite boat or the like, on which a boat sheet may be provided for carrying and fixing substrates in the form of silicon wafers or the like. The substrates can enter and exit the reaction chamber 110 together with the carrier 200, so as to conveniently realize batch processing of the substrates. Figure 2 When the carrier 200 is sent into the reaction chamber 110 , the carrier 200 can be supported by two support rods so that the carrier 200 can be stably placed in the reaction chamber 110 .

[0040] The carrier 200 may also be provided with an electrode connection portion, which is used to connect to the electrode component 520, and the electrode component 520 is used to connect to the RF power supply 300, so that a power supply circuit can be constructed between the RF power supply 300 and the carrier 200. In some implementations, the electrical connection portion of the carrier 200 is also referred to as a boat foot. The electrode component 520 may include an electrode rod and an insulating sleeve, and the insulating sleeve may be sheathed on the electrode rod.

[0041] Here, the embodiment of the present invention does not limit the connection method between the carrier 200 and the electrode component 520. In practical applications, those skilled in the art can set it according to specific needs, as long as it can meet the requirements of use. For example, an electrode holder can be set on the support rod, and the electrode holder can be connected to the electrode connecting part of the carrier 200, and the electrode holder can also be connected to the electrode component 520, so that an indirect connection between the electrode component 520 and the electrode connecting part of the carrier 200 can be achieved. For another example, the electrode component 520 can also be directly connected to the electrode connecting part of the carrier 200, which is also feasible.

[0042] In some implementations, only one carrier 200 may be accommodated in one reaction chamber 110 .

[0043] In other implementations, a reaction chamber 110 may also accommodate multiple carriers 200 at the same time, such as two carriers 200, so as to improve the production efficiency of deposition film formation. In this implementation, each carrier 200 may share the same RF power supply 300 to reduce the number of parts, simplify the structure, and facilitate control; each carrier 200 may be connected in series, or in parallel, or a combination of series and parallel connections. Of course, each carrier 200 may also be configured with a RF power supply 300, in which case the number of RF power supplies 300 and carriers 200 may be consistent, and each RF power supply 300 and each carrier 200 may be connected one by one.

[0044] The controller 400 can be connected to the RF power supply 300 and some other components that need to be controlled in the deposition film forming equipment (such as inlet and outlet valves, heating components, etc.) through signals so as to control the deposition film forming process.

[0045] As described in the background technology section, when a conductive film is prepared on the surface of a substrate, as the process continues, the insulating components in the electrode assembly 500, such as support rods and insulating sleeves, will gradually be covered by the conductive film, which will change the insulating properties of these insulating components. The conductive film covering the insulating components, especially the conductive film on the surface of the two support rods, will produce arcing and discharge with the adjacent carrier 200, thereby causing abnormal production conditions and seriously affecting the stable operation of the equipment and the quality of the deposited film.

[0046] In the related art, the conventional processing method is to disassemble the electrode assembly, and then grind the parts of the electrode assembly that need to remain insulated, such as support rods, insulating sleeves, etc., to remove the conductive film, and then install the electrode assembly. Although this processing method can solve the insulation abnormality of the support rod, it has at least the following defects: 1) The disassembly, assembly, and grinding of the electrode assembly are relatively cumbersome, requiring the coordination of multiple operators, and often takes more than 24 hours, which is inefficient; 2) During the implementation of the process, frequent abnormal conditions caused by the support rods and the like being covered by the conductive film occur from time to time. The conductive film on the support rods and the like needs to be processed almost every 2-3 months, which means that the machine needs to be disassembled and assembled every 2-3 months, and production will be frequently interrupted for a long time, and the continuity and stability of production will be affected. In addition, the support rod and other parts may be damaged during the disassembly and assembly and polishing process. Especially for the support rod, frequent disassembly and assembly operations will lead to premature damage of the connection structures such as the threaded holes thereon, and will also affect the reliability of the support rod after reinstallation; 3) During each disassembly and assembly process, the reaction chamber is at risk of contamination. When it is put back into production, the saturation treatment time in the chamber will be longer, which will also affect the production efficiency. If the saturation treatment is not carried out for a long enough time, it may affect the quality of the deposited film, resulting in a decrease in the yield rate.

[0047] In view of this, the controller 400 in the embodiment of the present invention may include a processor and a memory, and the memory may be pre-stored with a computer program. When the processor executes the computer program, it may implement a method for handling insulation anomalies, so that the support rod does not need to be disassembled or polished, that is, the insulation repair of the support rod can be completed online. In this way, the intensity of manual labor can be greatly reduced, the manpower allocation can be reduced, and the time for insulation repair can be shortened, thereby improving production efficiency; at the same time, the damage to components such as the support rod caused by frequent disassembly and assembly can be reduced, thereby reducing the operating cost of the equipment; and the risk of contamination in the reaction chamber 110 can be greatly reduced. Accordingly, when the equipment is put back into use, the time for saturation treatment can also be relatively short, so that the equipment can be put into use in a shorter time, thereby improving production efficiency to a greater extent, and ensuring the yield rate.

[0048] Specifically, please refer to Figure 3 , Figure 3 The present invention provides a flow chart of abnormality handling steps of a method for handling abnormal insulation of an electrode assembly during deposition film formation.

[0049] like Figure 3 As shown, the method for processing insulation abnormality of an electrode assembly during deposition film formation provided in an embodiment of the present invention includes an abnormality processing step S100, and the abnormality processing step S100 may include the following steps S110 to S130.

[0050] Step S110 , controlling the carrier 200 to enter the reaction chamber 110 , and connecting the carrier 200 and the RF power source 300 .

[0051] It should be noted that the carrier 200 here can be empty, that is, the carrier 200 does not need to carry the substrate, and the carrier 200 is sent into the reaction chamber 110 only to build a power supply circuit between the carrier 200 and the RF power supply 300 for subsequent related operations. Of course, whether the carrier 200 carries a substrate, that is, whether the carrier 200 is empty or not, falls within the scope of protection of this application. The electrical connection method between the carrier 200 and the RF power supply 300 can refer to the above description, and no repeated description is made here.

[0052] Step S120 , introducing a first process gas into the reaction chamber 110 .

[0053] Step S130, control to start the RF power supply 300, and ionize the first process gas to at least deposit an insulating film on the surface of the support rod. In this way, the online insulation repair of the support rod can be completed.

[0054] It should be understood that the deposition film forming equipment in the embodiment of the present invention is to complete the deposition film forming operation. Therefore, the above processing method is actually a reasonable application of the existing functions of the deposition film forming equipment. It does not need to introduce other equipment, and can directly use the deposition film forming equipment itself to complete the self-repair of the support rod, which is equivalent to adding a self-repair mode to the deposition film forming equipment. The invention is ingenious and can well solve the problems of insulation abnormality of the support rod.

[0055] In addition, the treatment method provided by the embodiment of the present invention can not only perform insulation repair on the support rod, but also deposit the insulating film to cover other components in the non-electrically connected conductive area such as the electrode holder and the electrode rod. In this way, the insulation properties of other components such as the electrode holder and the electrode rod can also be improved, which has a positive effect on reducing abnormal conditions such as arcing and discharge inside the reaction chamber 110, and can ensure the stability of equipment operation and the quality of deposition film to a greater extent.

[0056] Here, the embodiment of the present invention does not limit the type of the first process gas, and accordingly, does not limit the type of the insulating film finally formed. In practical applications, those skilled in the art can make a selection according to specific needs, as long as it can meet the requirements of use.

[0057] In some implementations, the insulating film may be selected from silicon nitride film, silicon oxide film, silicon oxynitride film, etc., and accordingly, the first process gas may be selected from silicon source, nitrogen source, oxygen source, etc. The silicon source gas may be, for example, any one or a combination of silane (SiH4), disilane (Si2H6), silicon tetrafluoride (SiF4). The nitrogen source gas may be, for example, ammonia (NH3), etc. The oxygen source gas may be, for example, laughing gas (N2O), etc.

[0058] Taking silane (SiH4) as the silicon source, ammonia (NH3) as the nitrogen source, and nitrous oxide (N2O) as the oxygen source as an example for specific description, when the above abnormal processing step S100 is implemented, the flow rate of SiH4 can be between 500sccm and 3000sccm, the flow rate of NH3 can be between 3000sccm and 15000sccm, and the flow rate of N2O can be between 2000sccm and 15000sccm. The process pressure can be between 100Pa and 500Pa. The process temperature can be between 400℃ and 550℃. The process time can be between 3 hours and 8 hours. Compared with the conventional treatment methods in the related art, which take at least 24 hours, the repair time can be greatly shortened.

[0059] In the first specific example (hereinafter referred to as Example 1), the first process gas may be a mixture of SiH4 and NH3, and the insulating film may be a silicon nitride film. The flow rate of SiH4 may be 1000 sccm. The flow rate of NH3 may be 8000 sccm. The process pressure may be 240 Pa. The process temperature may be 470°C. The process time may be set to 5 hours, wherein the actual coating time may be 4.5 hours.

[0060] In the second specific example (hereinafter referred to as Example 2), the first process gas may be a mixture of SiH4 and N2O, and the insulating film may be a silicon oxide film. The flow rate of SiH4 may be 1000 sccm. The flow rate of N2O may be 7000 sccm. The process pressure may be 200 Pa. The process temperature may be 470°C. The process time may be set to 5 hours, wherein the actual coating time may be 4.5 hours.

[0061] In the third specific example (hereinafter referred to as Example 3), the first process gas may be a mixture of SiH4, NH3 and N2O, and the insulating film may be a silicon oxynitride film. The flow rate of SiH4 may be 1000sccm. The flow rate of N2O may be 4000sccm. The flow rate of NH3 may be 5000sccm. The process pressure may be 200Pa. The process temperature may be 470°C. The process time may be set to 5 hours, wherein the actual coating time may be 4.5 hours.

[0062] In the fourth specific example (hereinafter referred to as Example 4), the insulating film may include at least one of a silicon nitride film, a silicon oxide film, and a silicon oxynitride film. Taking the case of a silicon nitride film, a silicon oxide film, and a silicon oxynitride film as an example, the order of forming the three films may not be limited, and may be determined in combination with actual use requirements, etc.; in addition, the forming process time of each film may be less than the process time required for the aforementioned single-layer films.

[0063] Please refer to Figure 4 , Figure 4 The present invention provides a flow chart of the abnormality detection step of the method for processing insulation abnormality of an electrode assembly during deposition film formation.

[0064] like Figure 4 As shown, the processing method provided by the embodiment of the present invention may further include an abnormality detection step S200, which is performed during the normal production process and is specifically performed before the aforementioned abnormality processing step S100. The abnormality detection step S200 may include the following steps S210 to S230.

[0065] Step S210, obtaining first characteristic information of the RF power supply 300. The first characteristic information may specifically be electrical signal information of the power supply circuit, that is, the first characteristic information may be collected from the power supply circuit. In specific practice, the first characteristic information may be obtained with the aid of some sensors, etc., and specifics may be referred to in the subsequent detailed description.

[0066] Step S220, determine whether the first characteristic information meets the first set condition. If yes, it means there is an abnormality, and the following step S230 can be continued. If no, it means there is no abnormality, and the equipment can continue normal production.

[0067] Step S230, controlling the output of abnormality confirmation information. After the abnormality confirmation information is generated, the processor may control the execution of the aforementioned abnormality handling step S100.

[0068] In practical applications, the deposition film forming equipment may also be equipped with an alarm, which may be connected to the controller 400 by signal. After the controller 400 outputs abnormal alarm information, the alarm may be activated to remind the staff on site or in the main control room; the alarm includes but is not limited to an optical signal alarm, an audio signal alarm, an audio-visual signal alarm, etc. Alternatively, an alarm module may be integrated in the controller 400, and an alarm program instruction may be stored in the alarm module. After the alarm program instruction is executed, an alarm may be issued in a pop-up window or other manner on a terminal device such as a computer in the main control room, which is also feasible.

[0069] In some optional implementations, the first characteristic information may include the number of unit arcs. The number of unit arcs here refers to the number of arcs in a reactor 100 per unit time, and the unit time may be, for example, one day, half a day (12 hours), etc. Accordingly, the first set condition may be that the number of unit arcs is greater than the set number, in which case it indicates that there is an abnormality inside the device.

[0070] The above-mentioned electric arc may specifically be a current arc, which is usually generated when the real-time current is greater than the set current value. At this time, a current sensor or the like may be used to detect the real-time current of the power supply circuit. Alternatively, the above-mentioned electric arc may specifically be a voltage arc, which is usually generated when the real-time voltage is less than the set voltage value. At this time, a voltage sensor or the like may be used to detect the real-time voltage of the power supply circuit. Here, the embodiment of the present invention does not limit the specific values ​​of the set current value and the set voltage value. In actual applications, those skilled in the art may determine them according to specific circumstances, etc., as long as they can meet the requirements of use.

[0071] In addition, the embodiment of the present invention does not limit the specific value of the above-mentioned set number. In practical applications, those skilled in the art can determine it according to specific needs, etc., as long as it can meet the requirements of use. For example, when the above-mentioned unit arc number is the number of arcs generated by a reactor 100 in one day, the above-mentioned set number can be between 2 and 4 times, such as 3 times.

[0072] In some optional implementations, the first characteristic information may include the load impedance information of the RF power supply 300, and the load impedance information may be calculated by obtaining the current and load voltage values ​​of the power supply circuit. In practical applications, a current sensor and a voltage sensor may be configured at the same time to detect the current value and voltage value, and then calculate the load impedance information. Accordingly, the first setting condition may be that the load impedance information is less than a set value.

[0073] Here, the embodiment of the present invention does not limit the specific value of the above setting value. In practical applications, those skilled in the art can determine it according to the specific conditions of the device, etc., as long as it can meet the requirements of use. For example, the setting value can be between 21.5Ω and 22Ω, such as 21.9Ω.

[0074] In specific practice, the above-mentioned judgment condition of the number of unit arcs and the above-mentioned judgment condition of the load impedance information can be selected one by one, so that the implementation process of the abnormality detection step S200 can be relatively simple. Alternatively, the above-mentioned judgment condition of the number of unit arcs and the above-mentioned judgment condition of the load impedance information can also be selected at the same time, so that the detection accuracy of the abnormality detection step S200 can be relatively high.

[0075] Please refer to Figure 5 , Figure 5 A schematic flow chart of the abnormality identification step and the abnormality processing step of the method for processing the insulation abnormality of the electrode assembly during the deposition film formation provided by the present invention.

[0076] The processing method provided in the embodiment of the present invention may further include an abnormality identification step S300 between the abnormality processing step S100 and the abnormality detection step S200. Specifically, Figure 5 As shown, the abnormality identification step S300 may include: step S310, after receiving the abnormality confirmation information output by the aforementioned step S230, determining whether there is hardware damage in the deposition film forming equipment.

[0077] The hardware damage may include, for example, a broken electrode rod, a broken insulating sleeve outside the electrode rod, and other faults that may cause abnormalities in the number of unit arcs and load impedance information. When implementing step S310, the reactor 100 may be deactivated first, and the broken substrates and the like therein may be emptied, and then the above-mentioned hardware damage may be checked. If hardware damage does exist, the hardware should be sent for repair, and the damaged hardware should be replaced to overcome the defects caused by hardware damage. If there is no hardware damage, the above-mentioned abnormality handling step S100 may be performed.

[0078] By implementing the above-mentioned abnormality identification step S300, hardware damage can be effectively checked, which is beneficial to ensure the effectiveness of the implementation of the abnormality handling step S100 in the embodiment of the present invention.

[0079] Please refer to Figure 6 and Figure 7 , Figure 6 A schematic flow chart of an abnormality resolution judging step and an abnormality handling step of a method for handling abnormal insulation of an electrode assembly during deposition film formation provided by the present invention; Figure 7 A flow chart of another abnormality resolution judgment step and abnormality processing step of the method for processing insulation abnormality of an electrode assembly during deposition film formation provided by the present invention.

[0080] In some optional implementations, the processing method provided in the embodiment of the present invention may further include an abnormality resolution determination step S400, which may be specifically performed after the abnormality processing step S100. Figure 6 As shown, the abnormality resolution determination step S400 may include the following steps S410 to S430.

[0081] Step S410: Obtain second characteristic information of the RF power source 300. The second characteristic information here may be consistent with the aforementioned first characteristic information.

[0082] Step S420, determining whether the second characteristic information meets the second setting condition. If yes, executing step S430. If no, continuing to execute the above-mentioned exception handling step S100.

[0083] In the embodiment of the present invention, taking the second characteristic information including the load impedance information of the RF power source 300 as an example, at this time, the second setting condition may be that the load impedance information is within the setting interval. Here, the embodiment of the present invention does not limit the specific range of the setting interval. In practical applications, those skilled in the art may select it according to specific needs, as long as it can meet the requirements of use. For example, the setting interval may be 22Ω-23Ω.

[0084] Step S430, control output of abnormality resolution information. At this point, the deposition film forming equipment provided by the embodiment of the present invention can be put into production normally.

[0085] like Figure 7 As shown, before step S410, the abnormality resolution judgment step S400 may further include: step S440, introducing a second process gas into the reaction chamber 110. The composition of the second process gas may be close to that of normal production, so that when the abnormality resolution judgment step S400 is executed, the second characteristic information obtained in step S410 may be closer to the actual situation of normal production, and it may also be more accurately judged whether the abnormality handling step S100 has effectively overcome the abnormality.

[0086] Here, the embodiment of the present invention does not limit the specific value of the composition of the second process gas. In practical applications, those skilled in the art can determine it according to relevant conditions of normal production, etc. For example, the second process gas can be a mixed gas of SiH4, H2 and phosphine (PH3), wherein the flow rate of SiH4 can be 3300sccm, the flow rate of H2 can be 7000sccm, and the flow rate of PH3 can be 300sccm; the process pressure can be 400Pa; the process temperature can be 450℃; the process time can be 1min; the power of the RF power supply 300 can be 15KW, and the duty cycle can be 4 / 52.

[0087] Please refer to Figure 8 , Figure 8 The present invention is a schematic flow chart of a method for treating insulation abnormality of an electrode assembly during deposition film formation.

[0088] like Figure 8 As shown, and in combination with the above description, the method for handling insulation abnormality provided in the embodiment of the present invention may include an abnormality detection step S200, an abnormality identification step S300, an abnormality handling step S100 and an abnormality resolution judgment step S400.

[0089] During normal production, the abnormality detection step S200 can be performed continuously or periodically. If the abnormality confirmation information is not output, normal production can be maintained. If the abnormality confirmation information is output, the abnormality identification step S300 can be performed. The abnormality identification step S300 is mainly used to identify whether there is hardware damage. If so, the hardware should be repaired. If not, the abnormality handling step S100 can be performed. After the abnormality handling step S100 is executed, the abnormality release judgment step S400 can be performed. If the abnormality release information is output, the equipment can be put into normal production. If the abnormality release information is not output, the abnormality handling step S100 needs to be executed again to perform insulation abnormality processing again.

[0090] Table 1 Test results of various exemplary solutions in the embodiments of the present invention

[0091] Serial number Insulation film Load impedance information before processing / Ω Processing time / hour Processed load impedance information / Ω Determination of insulation treatment effect Example 1 Silicon Nitride 21.61 4.5 23.22 OK Example 2 Silicon oxide 21.83 4.5 23.35 OK Example 3 Silicon Oxynitride 21.37 4.5 22.89 OK

[0092] As shown in Table 1, the above three example solutions of Example 1, Example 2 and Example 3 in the exception handling step S100 are analyzed and explained.

[0093] For Example 1, before executing the processing method in the embodiment of the present invention, the load impedance information is 21.61Ω, which meets the first setting condition. When executing the abnormality detection step S200, step S230 outputs abnormality confirmation information. When the abnormality identification step S300 determines that there is no hardware damage, the abnormality processing step S100 is started to cover the surface of the support rod and other components with a silicon nitride film. Then, the load impedance information is detected to be 23.22Ω by the abnormality resolution judgment step S400, which meets the second setting condition, and step S430 can output abnormality resolution information. The equipment can be put into normal production.

[0094] For Example 2, before executing the processing method in the embodiment of the present invention, the load impedance information is 21.83Ω, which meets the first setting condition. When executing the abnormality detection step S200, step S230 outputs abnormality confirmation information. When the abnormality identification step S300 determines that there is no hardware damage, the abnormality processing step S100 is started to cover the surface of the support rod and other components with a silicon oxide film. Then, the load impedance information is detected to be 23.35Ω by the abnormality resolution judgment step S400, which meets the second setting condition, and step S430 can output abnormality resolution information. The equipment can be put into normal production.

[0095] For Example 3, before executing the processing method in the embodiment of the present invention, the load impedance information is 21.37Ω, which meets the first setting condition. When executing the abnormality detection step S200, step S230 outputs abnormality confirmation information. When the abnormality identification step S300 determines that there is no hardware damage, the abnormality processing step S100 is started to cover the surface of the support rod and other components with a silicon oxynitride film. Then, the load impedance information is detected to be 22.89Ω by the abnormality resolution judgment step S400, which meets the second setting condition, and step S430 can output abnormality resolution information. The equipment can be put into normal production.

[0096] The above are only preferred embodiments of the present invention. It should be pointed out that, for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A method for treating insulation abnormality of an electrode assembly during deposition film formation, characterized in that: The processing method includes an exception handling step, and the exception handling step includes: Controlling the carrier to enter the reaction chamber, and connecting the carrier to a radio frequency power source; introducing a first process gas into the reaction chamber; The radio frequency power source is controlled to start, and the first process gas is ionized to deposit an insulating film at least on the surface of the support rod.

2. The processing method according to claim 1, characterized in that: The insulating film includes at least one of a silicon nitride film, a silicon oxide film, and a silicon nitride oxide film.

3. The processing method according to claim 1 or 2, characterized in that: The processing method further includes an abnormality detection step before the abnormality processing step, and the abnormality detection step includes: Acquiring first characteristic information of the radio frequency power source; It is determined whether the first characteristic information meets the first setting condition, and if so, the output of abnormality confirmation information is controlled.

4. The processing method according to claim 3, characterized in that: The first characteristic information includes a unit arc number, where the unit arc number is the number of arcs in one of the reactors per unit time, and the first setting condition is that the unit arc number is greater than a set number.

5. The processing method according to claim 3, characterized in that: The first characteristic information includes load impedance information of the RF power supply, and the first setting condition is that the load impedance information is less than a set value.

6. The processing method according to claim 3, characterized in that: The processing method further includes an abnormality identification step between the abnormality processing step and the abnormality detection step, and the abnormality identification step includes: After receiving the abnormality confirmation information, it is determined whether the deposition film forming equipment has hardware damage, and if not, the abnormality handling steps are executed.

7. The processing method according to claim 1 or 2, characterized in that: The processing method further includes an abnormality resolution judgment step, wherein the abnormality resolution judgment step includes: Acquiring second characteristic information of the radio frequency power source; It is determined whether the second characteristic information meets the second setting condition, and if so, the abnormality release information is output.

8. The processing method according to claim 7, characterized in that: The second characteristic information includes load impedance information of the RF power supply, and the second setting condition is that the load impedance information is within a set range.

9. The processing method according to claim 7, characterized in that: Before acquiring the second characteristic information of the radio frequency power source, the abnormality resolution judgment step further includes: A second process gas is introduced into the reaction chamber.

10. A deposition film forming device, characterized in that: The invention comprises a reactor, an electrode assembly, a radio frequency power supply, a carrier and a controller, wherein the reactor has a reaction chamber, the electrode assembly comprises a support rod and an electrode component, at least a part of the support rod is installed in the reaction chamber, the carrier can be supported by the support rod, the carrier is connected to the radio frequency power supply via the electrode component, the controller comprises a processor and a memory storing a computer program, and when the processor executes the computer program, the method for processing insulation abnormality of the electrode assembly during deposition film formation as claimed in any one of claims 1 to 9 is implemented.

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