An anti-interference integrated etching endpoint detection device

Abstract

The present invention provides an anti-interference integrated etching endpoint detection device, including: a signal collection module for collecting optical signals in an etching chamber; an interference endpoint detection function module and an optical emission spectrum endpoint detection function module for receiving and processing optical signals in different process scenarios, respectively, wherein the interference endpoint detection function module includes a xenon lamp light source for providing a light source for detection in a first process scenario, and a boost power supply module for powering the xenon lamp light source. The present invention integrates OES and IEP functions and performs anti-interference design to form a complete machine, and performs interference endpoint detection and optical emission spectrum endpoint detection at the same time, thereby realizing accurate detection of etching endpoints by a single device through integrated dual detection functions. The present invention also reduces the large dispersed space occupied by single-function equipment, minimizes the integrated volume, and improves space utilization.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor etching endpoint detection, and in particular to an anti-interference integrated etching endpoint detection device. Background Art

[0002] The etching endpoint detection equipment is a device used to monitor and detect the endpoint of the etching process in the semiconductor manufacturing process. Etching is one of the key steps in manufacturing semiconductor chips, and it mainly removes a specific material layer from the surface of the wafer by chemical or physical means. In this process, it is crucial to accurately determine the endpoint of the etching. Over-etching or under-etching will affect the quality of the final product. The role of the etching endpoint detection equipment is to monitor the progress of the etching in real time during the etching process, and accurately determine when the etching reaches the target layer to ensure that the timing of stopping the etching is accurate. The commonly used etching endpoint detection methods in the prior art are IEP (interferometry end point, laser interferometry) and OES (optical emission spectroscopy, optical emission spectroscopy). Corresponding to IEP is an interferometry etching endpoint detection device, and corresponding to OES is a spectroscopy etching endpoint detection device. These two devices are suitable for use in different process scenarios.

[0003] Among them, the IEP usage scenario is as follows: the xenon lamp light source is connected to the IEP probe through an optical fiber, and the probe is located above the top of the etching chamber. The light emitted by the xenon lamp light source is transmitted to the probe through the optical fiber, and then irradiated to the surface of the wafer; the light reflected from the surface of the wafer is collected by the IEP probe, and then transmitted to the spectrum module through the optical fiber. The spectrum module performs spectroscopic processing on the received reflected light and detects the optical signal after spectroscopic processing. After that, the detected optical signal is converted into an electrical signal and fed back to the control system to detect the real-time change of the etching depth, thereby determining the end point of the etching process.

[0004] The usage scenarios of the OES method are as follows: the OES probe collects plasma emission light from the side observation window of the etching chamber, and transmits it to the spectral module through optical fiber for spectroscopic processing; by obtaining the emission spectrum of the plasma in the chamber, the etching depth during the process is detected in real time, thereby determining the end point of the etching process.

[0005] In practical applications, these two devices have certain process detection limitations, which leads to over-etching or under-etching, and the equipment used in the production process is scattered and occupies a large space. The present application intends to provide an etching endpoint detection device that integrates the above two methods. The device can provide two endpoint detection methods, laser interferometry and optical emission spectroscopy. However, when the two detection functions are integrated, there will be some high-voltage devices inside the device. When only one power input is used, such as a stroboscopic xenon lamp, strong electromagnetic interference and a large current peak will be generated, affecting surrounding electronic equipment. The photoelectric detector inside the spectral module is sensitive and easily affected by external electromagnetic interference, generating large noise, affecting the measurement accuracy, and making the device unable to operate stably. Summary of the invention

[0006] The purpose of the present invention is to propose an anti-interference integrated etching endpoint detection device to solve the problems in the prior art that the etching endpoint detection device has a single detection function, the equipment is dispersed and the distribution space is large, and it is impossible to accurately detect the endpoints of multiple etching processes through a single-function device.

[0007] In order to solve the above technical problems, the present invention provides an anti-interference integrated etching endpoint detection device, including: a signal collection module, an interference endpoint detection function module, an optical emission spectrum endpoint detection function module, a mainboard and a mainboard power supply module. Among them, the signal collection module is used to collect the first optical signal or the second optical signal in the etching chamber; the interference endpoint detection function module is arranged on the optical path of the first optical signal, and is used to receive the first optical signal in the first process scenario, and convert the first optical signal into a first electrical signal, and transmit the first electrical signal to the target industrial computer; the optical emission spectrum endpoint detection function module is arranged on the optical path of the second optical signal, and is used to receive the second optical signal in the second process scenario, and convert the second optical signal into a second electrical signal, and transmit the second electrical signal to the target industrial computer; the mainboard is electrically connected to the interference endpoint detection function module and the optical emission spectrum endpoint detection function module, and is used to control the interference endpoint detection module and the optical emission spectrum endpoint detection function module to work normally; the input end of the mainboard power supply module is connected to the external power supply, and its output end is electrically connected to the mainboard, and the mainboard power supply module is used to power the mainboard.

[0008] Through the above technical scheme, the technical effect achieved is: two etching endpoint detection modules are integrated into one etching endpoint detection machine, including an interference endpoint detection functional module and an optical emission spectrum endpoint detection functional module, wherein the interference endpoint detection functional module corresponds to interference endpoint detection, and the optical emission spectrum endpoint detection functional module corresponds to optical emission spectrum detection. By integrating these two endpoint detection modules in the same etching endpoint detection equipment, different detection methods can be flexibly selected according to different process scenarios, thereby greatly improving the adaptability and accuracy of the etching endpoint detection equipment to different process scenarios; secondly, through this integrated design scheme, the space occupied by the equipment can be effectively reduced, thereby effectively solving the problem of large space occupation and scattered equipment of the previous distributed layout products.

[0009] Preferably, the interference endpoint detection functional module includes: a xenon lamp light source, a boost power supply module and a first spectrum module.

[0010] Among them, the xenon lamp light source is used to provide a light source for detection in a first process scenario; the input end of the boost power supply module is connected to the external power supply, and the output end thereof is connected to the xenon lamp light source, and the boost power supply module is used to power the xenon lamp light source; the first spectral module is connected to the signal collection module, for receiving the first optical signal from the signal collection module and converting it into the first electrical signal.

[0011] The technical effect achieved by the above technical solution is: compared with the device using a single method to detect the etching endpoint in the prior art, this solution adds a boost power supply module. Since the xenon lamp light source requires a higher power supply voltage, and the mainboard power supply is a low-voltage power supply, in order to solve this contradiction, a single boost power supply module is added to the xenon lamp light source to meet the high voltage requirement of the xenon lamp light source;

[0012] A further benefit is that the dual power supply design (boost power supply module and mainboard power supply module) can divert the external power supply, avoiding mutual interference between peak voltages and currents in different lines.

[0013] Preferably, the optical emission spectrum endpoint detection functional module includes a second spectrum module, and the second spectrum module is connected to the signal collection module and is used to receive the second optical signal from the signal collection module and convert it into the second electrical signal.

[0014] The technical effect achieved by the above technical solution is: by setting up a second spectral module, the module can be used in a second process scenario to receive the second optical signal from the signal collection module and convert it into the second electrical signal for processing and analysis by the industrial computer.

[0015] Preferably, the signal collection module includes a first probe, a first optical fiber, a second probe and a second optical fiber; wherein the first optical fiber is split into two, including a single optical fiber end and a double optical fiber end; wherein the single optical fiber end is connected to the first probe, and the double optical fiber end is respectively connected to the xenon lamp light source and the first spectral module; and the two ends of the second optical fiber are respectively connected to the second probe and the second spectral module.

[0016] The technical effect achieved by the above technical solution is: the first probe in the signal collection module is connected to the xenon lamp light source and the first spectrum module through the first optical fiber; the second probe is connected to the second spectrum module through the second optical fiber; different optical probes and optical transmission paths are set for different process scenarios to collect optical signals.

[0017] Preferably, the boost power supply module includes a first circuit board and a first shielding shell, and the first circuit board is installed inside the first shielding shell; the mainboard power supply module includes a second circuit board and a second shielding shell, and the second circuit board is installed inside the second shielding shell.

[0018] The technical effect achieved by the above technical solution is: by respectively providing a shielding shell for the first circuit board and the second circuit board, the electromagnetic interference of the boost power supply module and the mainboard power supply module to external electronic devices can be shielded.

[0019] Preferably, the first spectrum module and the second spectrum module are provided with a shielding cover outside the cover, the shielding cover is used to shield external electromagnetic interference; the first spectrum module and the second spectrum module are respectively connected to the shielding cover through a plurality of elastic shock-absorbing fasteners. The shielding cover is electrically connected to a grounding wire.

[0020] The technical effect achieved by the above technical solution is: by providing a shielding cover on the outside of the first spectrum module and the second spectrum module, external electromagnetic interference can be effectively shielded, especially the electromagnetic interference generated by the high-power discharge of the xenon lamp light source.

[0021] Preferably, the xenon lamp light source includes a xenon lamp body and a xenon lamp power supply; the xenon lamp power supply is electrically connected to the boost power supply module and is used to directly supply power to the xenon lamp body.

[0022] The technical effect achieved by the above technical solution is: by adopting a boost power supply module to supply power to the xenon lamp power supply, the power supply demand of the xenon lamp power supply for instantaneous high voltage can be met.

[0023] Preferably, the boost power supply module further includes a capacitor, which is used to supply power to the xenon lamp light source when the xenon lamp light source needs instantaneous high-power discharge. Furthermore, the boost power supply module includes multiple capacitors, which play a buffering role in an instantaneous high-voltage environment by adopting a multi-capacitor design, thereby minimizing electromagnetic impact interference to the device.

[0024] The technical effect achieved by the above technical solution is that the capacitor can be slowly charged from the power grid to store electrical energy when the xenon lamp body is not working. When the xenon lamp body needs high-power discharge, the capacitor quickly releases the stored energy, thereby avoiding the impact on the power grid and ensuring the stable operation of the xenon lamp body.

[0025] Preferably, the boost power supply module and the mainboard power supply module are connected to the external power supply via a filter component, and the filter component is used to filter the external power supply before shunting it.

[0026] The technical effect achieved by the above technical solution is: by setting the filtering component, the impact of external power supply voltage fluctuation and transient pulse current can be effectively reduced, thereby protecting the equipment from the influence of unstable power supply to ensure stable operation and extend the service life of the equipment.

[0027] Preferably, the filter assembly includes a thermistor for increasing resistance when the current suddenly increases, so as to reduce impact on the power supply and circuit.

[0028] The technical effect achieved by the above technical solution is that the thermistor can quickly increase its resistance when the current suddenly increases, thereby limiting the rate of increase of the current, reducing the impact on the power supply and circuit, and thus increasing the stability of the equipment.

[0029] Preferably, the filtering component comprises a filtering circuit, and the filtering circuit is used to reduce ripple.

[0030] The technical effect achieved by the above technical solution is: by adding a filter circuit to the filter component, the power supply ripple can be effectively filtered out and the detection accuracy can be improved.

[0031] Preferably, it also includes a device housing, the mainboard is installed inside the device housing, and the internal space of the device housing is divided into two different compartments, and the boost power supply module and the mainboard power supply module are respectively installed in different compartments.

[0032] The technical effect achieved by the above technical solution is: by designing different power supplies in a compartmentalized manner, the interference isolation effect between the two power supplies can be enhanced.

[0033] The beneficial effects of the present invention are as follows: the present invention integrates the OES and IEP functions and performs anti-interference design to form a complete machine, so that one device can be applied to multiple processes in etching scenarios, and interference endpoint detection and plasma endpoint detection can be performed simultaneously. The present invention reduces the large dispersed space occupied by single-function devices, minimizes the integrated volume, and improves space utilization.

[0034] A further effect is that by adopting a dual power supply design, the current is divided, the impact of high current peaks on the equipment is avoided, and the stability and reliability of the equipment are improved.

[0035] A further effect is that by adding electromagnetic shielding covers to each component, external electromagnetic interference is guided underground, thereby preventing electromagnetic interference from affecting the normal operation and test accuracy of the equipment.

[0036] A further effect is that, by adopting a multi-capacitor design and electromagnetic shielding covers for each component, the impact of instantaneous high voltage on the equipment is minimized, thereby improving the operating stability of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 A diagram showing the connection relationship of various modules in the anti-interference integrated etching endpoint detection device according to an embodiment of the present invention;

[0038] Figure 2 A schematic diagram of an optical path in an anti-interference integrated etching endpoint detection device according to an embodiment of the present invention;

[0039] Figure 3 It is a schematic diagram of the connection relationship between the anti-interference integrated etching endpoint detection device and the etching chamber and the target industrial computer according to an embodiment of the present invention;

[0040] Figure 4 for Figure 1 Schematic diagram of the internal structure of the xenon lamp light source;

[0041] Figure 5 This is a schematic diagram of the compartment layout of the anti-interference integrated etching endpoint detection device according to an embodiment of the present invention;

[0042] Figure 6 It is a structural diagram of the first spectrum module and the second spectrum module and the shielding cover of the present invention;

[0043] Figure 7 This is a schematic diagram of a grounding wire and a device housing of an anti-interference integrated etching endpoint detection device according to an embodiment of the present invention.

[0044] Component number description:

[0045] Signal collection module 1, first probe 11, first optical fiber 12, second probe 13, second optical fiber 14,

[0046] Interference endpoint detection function module 2, xenon lamp light source 21, xenon lamp body 211, xenon lamp power supply 212, boost power supply module 22, first shielding shell 221, first spectrum module 23, first slit 231, first reflector 232, first grating 233, first focusing mirror 234, first filter 235, first detector 236,

[0047] Optical emission spectrum endpoint detection function module 3, second spectrum module 31, second slit 311, second reflector 312, second grating 313, second focusing mirror 314, second filter 315, second detector 316,

[0048] Mainboard 4, filter component 5, mainboard power supply module 6, second shielding shell 61, external power supply 62,

[0049] Shielding cover 7, grounding wire 71, elastic shock-absorbing fastener 72, etching chamber 8, target industrial computer 9, equipment housing 10, first cabin 101, and second cabin 102. DETAILED DESCRIPTION

[0050] In order to make the purpose, technical scheme and advantages of the present invention clearer, the technical scheme in the embodiment of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work belong to the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the usual meanings understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Unless otherwise specified, the "connection" described in this article can be a direct connection or an indirect connection, that is, connected through an intermediate.

[0051] Please refer to the attached Figure 1-Figure 3 In view of the problems existing in the prior art, an embodiment of the present invention provides an anti-interference integrated etching endpoint detection device, including: a signal collection module 1, an interference endpoint detection function module 2, an optical emission spectrum endpoint detection function module 3, a mainboard 4 and a mainboard power supply module 6.

[0052] The signal collection module 1 is used to collect the first optical signal or the second optical signal in the etching chamber 8. The first optical signal is generated in the first process scenario, and is generated in such a way that when the light beam generated by the xenon lamp light source 21 enters the etching chamber and irradiates the material in the etching chamber, a part of the light beam is reflected on the surface of the material, and the other part penetrates the material and is reflected at a deeper interface, and the two reflected lights are the above-mentioned first optical signal.

[0053] The second optical signal is generated in the second process scenario. During the etching process in the second process scenario, the plasma generated by the etching reaction is itself a light source. Different chemical substances in the plasma will emit light of different wavelengths, which is the above-mentioned second optical signal.

[0054] The interference endpoint detection function module 2 is arranged on the optical path of the first optical signal, and is used to receive the first optical signal in the first process scenario, and convert the first optical signal into a first electrical signal, and transmit the first electrical signal to the target industrial computer 9 (such as Figure 3 ).

[0055] The optical emission spectrum endpoint detection function module 3 is arranged on the optical path of the second optical signal, and is used to receive the second optical signal in a second process scenario, convert the second optical signal into a second electrical signal, and transmit the second electrical signal to the target industrial computer 9.

[0056] The mainboard 4 is electrically connected to the interference endpoint detection function module 2 and the optical emission spectrum endpoint detection function module 3, and is used to control the interference endpoint detection module and the optical emission spectrum endpoint detection function module 3 to work normally.

[0057] The input end of the mainboard power supply module 6 is connected to the external power supply 62, and the output end thereof is electrically connected to the mainboard 4; in this embodiment, the mainboard power supply module 6 is used to convert the 220V input voltage into 24V and supply power to the mainboard 4. Further, the mainboard 4 is electrically connected to the first spectrum module 23 in the interference endpoint detection function module 2, and the mainboard 4 supplies power to the first spectrum module 23 while also controlling the first spectrum module 23 to ensure that the first spectrum module 23 works normally; the mainboard 4 is electrically connected to the second spectrum module 31 of the optical emission spectrum endpoint detection function module 3, and also controls the second spectrum module 31 to ensure that the second spectrum module 31 works normally.

[0058] In this embodiment, the first process scenario refers to a process scenario that is very sensitive to surface morphology changes, especially in situations where precise control of optical thickness and high requirements for surface flatness are required, such as thin film etching, etching with high requirements for surface flatness, photoresist or oxide etching, etc. The second process scenario refers to a process scenario that requires determining the etching endpoint by monitoring the spectral changes of products or reactants during the etching process, such as plasma etching processes, multi-layer material etching, and etching processes with complex reaction chemistry.

[0059] In this design, the interference endpoint detection function module 2 corresponds to the interference method endpoint detection, and the optical emission spectrum endpoint detection function module 3 corresponds to the spectrum detection method. By integrating these two endpoint detection modules in the same etching endpoint detection equipment, different detection methods can be flexibly selected according to different process scenarios, which greatly improves the adaptability of the etching endpoint detection equipment to different process scenarios; secondly, this integrated design solution can effectively reduce the space occupied by the equipment, thereby effectively solving the problem of large space occupation and scattered equipment of the previous distributed layout products.

[0060] Please refer to Figure 1 In one embodiment of the present invention, the interference endpoint detection functional module 2 includes: a xenon lamp light source 21 , a boost power supply module 22 and a first spectrum module 23 .

[0061] Among them, the xenon lamp light source 21 is used to provide a light source for detection in the first process scenario; the function of the light source is to generate coherent light; the input end of the boost power supply module 22 is connected to the external power supply 62, and the output end is connected to the xenon lamp light source 21, and the boost power supply module 22 is used to supply power to the xenon lamp light source 21; compared with the device that uses a single method to detect the etching endpoint in the prior art, this embodiment adds a boost power supply module 22, considering that the xenon lamp light source 21 requires a higher power supply voltage, and the mainboard 4 is powered by a low voltage power supply (24V in this embodiment). To solve this contradiction, a single boost power supply module 22 is added to the xenon lamp light source 21, and the boost power supply module 22 can boost the 220V input voltage to supply power to the xenon lamp power supply 212. In this solution, a dual power supply design (boost power supply module 22 and mainboard power supply module 6) is adopted, and the external power supply can be shunted to avoid the interference of peak voltage and current in different lines. In this embodiment, the external power supply voltage is 220V.

[0062] Please refer to Figure 1-Figure 2 In this embodiment, the first spectrum module 23 is connected to the signal collection module 1, and is used to receive the first optical signal from the signal collection module 1 and convert it into the first electrical signal. Specifically, the first spectrum module 23 includes a first slit 231, a first aperture (not shown in the drawings), a first reflector 232, a first grating 233, a first focusing mirror 234, a first filter 235, a first detector 236 and a corresponding circuit board (not shown in the drawings); wherein the first slit 231, the first aperture (not shown in the drawings), the first reflector 232, the first grating 233, the first focusing mirror 234, and the first filter 235 in the first spectrum module 23 cooperate with each other to receive the first optical signal from the signal collection module 1 and perform spectroscopic processing on it.

[0063] The first detector 236 is used to detect the optical signal output after the spectroscopic processing, specifically, to receive the light intensity changes of the interference fringes, and then the first detector 236 converts these changes into electrical signals and transmits them to the target industrial computer 9 for processing. The first detector 236 in this embodiment can be a photoelectric detector in the prior art. The circuit board is a basic component commonly used in the electrical module, which is well known to those skilled in the art and will not be described in detail here.

[0064] Please refer to Figure 1-Figure 2 In one embodiment of the present invention, the optical emission spectrum endpoint detection function module 3 includes a second spectrum module 31, and the second spectrum module 31 is connected to the signal collection module 1, and is used to receive the second optical signal from the signal collection module 1 and convert it into the second electrical signal. Specifically, the second spectrum module 31 includes a second slit 311, a second aperture, a second reflector 312, a second grating 313, a second focusing mirror 314, a second filter 315, a second detector 316 and a corresponding circuit board. Among them, the second spectrum module 31 includes a second slit 311, a second aperture, a second reflector 312, a second grating 313, a second focusing mirror 314, and a second filter 315, which cooperate with each other to receive the second optical signal from the signal collection module 1 and perform spectroscopic processing on it.

[0065] The second detector 316 is used to detect the wavelength and intensity of the light signal output after the spectroscopic processing. Then, the second detector 316 converts these changes into electrical signals and transmits them to the target industrial computer 9 for processing. The second detector 316 in this embodiment can be a CCD (charge coupled device) or a PMT (photomultiplier tube) in the prior art. The circuit board is a basic device commonly used in electrical modules, which is well known to those skilled in the art and will not be described in detail here.

[0066] Please refer to Figure 1 In one embodiment of the present invention, the signal collection module 1 includes a first probe 11, a first optical fiber 12, a second probe 13 and a second optical fiber 14; wherein the first optical fiber 12 is a one-to-two type, including a single optical fiber end and a double optical fiber end; wherein the single optical fiber end is connected to the first probe 11, and the double optical fiber end is respectively connected to the xenon lamp light source 21 and the first spectrum module 23; the two ends of the second optical fiber 14 are respectively connected to the second probe 13 and the second spectrum module 31. The first probe 11 is used to collect the first optical signal in the first scene, and the second probe 13 is used to collect the second optical signal in the second scene. Setting different optical probes and optical transmission paths for different process scenes can avoid mutual interference between the two detection systems.

[0067] Please refer to Figure 5In one embodiment of the present invention, the boost power supply module 22 includes a first circuit board and a first shielding shell 221, and the first circuit board is installed inside the first shielding shell 221; the mainboard power supply module 6 includes a second circuit board and a second shielding shell 61, and the second circuit board is installed inside the second shielding shell 61. By providing shielding shells for the first circuit board and the second circuit board respectively, the electromagnetic interference of the boost power supply module 22 and the mainboard power supply module 6 to external electronic devices can be shielded. In this embodiment, the first shielding shell 221 and the second shielding shell 61 use a conductive shell of 5052 aluminum alloy to form a Faraday cage to shield the electromagnetic field of the internal space.

[0068] Please refer to Figure 4 In one embodiment of the present invention, the xenon lamp light source 21 includes a xenon lamp body 211 and a xenon lamp power supply 212; the xenon lamp power supply 212 is electrically connected to the boost power supply module 22 and is used to directly power the xenon lamp body 211. By using the boost power supply module 22 to power the xenon lamp power supply 212, the xenon lamp power supply 212 can meet the power supply demand for instantaneous high voltage. Further, the boost power supply module 22 also includes a capacitor (not shown in the drawings), which is used to power the xenon lamp power supply 212 of the xenon lamp light source 21 when the xenon lamp light source 21 needs instantaneous high-power discharge, and the xenon lamp power supply 212 performs instantaneous high-voltage discharge to light up the xenon lamp body 211. Specifically, the capacitor can be slowly charged from the power grid when the xenon lamp body 211 is not working, and stores electrical energy. When the xenon lamp body 211 needs high-power discharge, the capacitor quickly releases the stored energy, which can avoid the impact on the power grid and ensure the stable operation of the xenon lamp body 211. In other embodiments, the boost power supply module may further include a plurality of capacitors, which can play a buffering role in an instantaneous high voltage environment by adopting a multi-capacitor design, thereby minimizing electromagnetic impact interference to the device.

[0069] In one embodiment of the present invention, the boost power supply module 22 and the mainboard power supply module 6 are connected to the external power supply 62 through a filter component 5, and the filter component 5 is used to filter the external power supply 62 and then shunt it. Further, the filter component 5 includes a thermistor (not shown in the drawings) for increasing the resistance when the current suddenly increases to reduce the impact on the power supply and circuit. The thermistor can quickly increase its resistance when the current suddenly increases, thereby limiting the rate of increase of the current, reducing the impact on the power supply and circuit, and increasing the stability of the device.

[0070] Please refer to Figure 6In the prior art, the voltage of the xenon strobe lamp is as high as thousands of volts, which has great electromagnetic interference to nearby circuits, screens, etc., affecting the normal operation of the equipment. The photoelectric detectors inside the first spectrum module 23 and the second spectrum module 31 are very sensitive and easily affected by external electromagnetic interference, generating large noise and affecting the measurement accuracy. In order to avoid such interference, the first spectrum module 23 and the second spectrum module 31 are also covered with a shielding cover 7 to shield external electromagnetic interference.

[0071] The first spectrum module 23 and the second spectrum module 31 are connected to the inner wall of the shielding cover 7 through four elastic shock-absorbing fasteners 72 respectively. In this embodiment, the elastic shock-absorbing fasteners 72 are shock-absorbing screws. In other embodiments, other fasteners with elastic shock-absorbing functions in the prior art can also be used. The shielding cover 7 is electrically connected to a grounding wire 71, which provides a low-impedance grounding path for the shielding cover 7, ensuring that the shielding cover 7 can effectively guide external electromagnetic interference to the ground, thereby reducing the impact of interference signals on internal electronic equipment.

[0072] In one embodiment of the present invention, the filtering component 5 includes a filtering circuit, and the filtering circuit is used to reduce power supply ripple, thereby improving measurement accuracy.

[0073] In one embodiment of the present invention, a device housing 10 is further included, the mainboard 4 is installed inside the device housing 10, and the internal space of the device housing 10 is divided into a first compartment 101 and a second compartment 102, the boost power supply module 22 is installed in the first compartment 101, and the mainboard power supply module 6 is installed in the second compartment 102. By designing different power supplies in compartments, the interference isolation effect between the two power supplies can be enhanced.

[0074] In summary, this embodiment integrates the functions of OES and IEP and performs anti-interference design to form a complete etching endpoint detection device. The device of the present invention is applied to the StairCase process in the etching scene to perform synchronous detection of the interference endpoint and the plasma endpoint, overcoming the limitation that the OES or IEP device alone cannot accurately detect the etching endpoint moment, thereby achieving the effect of accurately detecting the etching endpoint. The present invention also reduces the large dispersed space occupied by the single-function devices of OES and IEP, minimizes the integrated volume and improves the space utilization.

[0075] The above is only a specific implementation of the embodiment of the present application, but the protection scope of the embodiment of the present application is not limited thereto, and any changes or replacements within the technical scope disclosed in the embodiment of the present application should be included in the protection scope of the embodiment of the present application. Therefore, the protection scope of the embodiment of the present application should be based on the protection scope of the claims.

Claims

1. An anti-interference integrated etching endpoint detection device, characterized in that: include: A signal collection module, used for collecting the first optical signal or the second optical signal in the etching chamber; An interference endpoint detection function module is arranged on the optical path of the first optical signal, and is used to receive the first optical signal in a first process scenario, and convert the first optical signal into a first electrical signal, and transmit the first electrical signal to a target industrial computer; the interference endpoint detection function module also includes a xenon lamp light source, a boost power supply module and a first spectrum module, wherein the boost power supply module is used to supply power to the xenon lamp light source; the first spectrum module is used to receive the first optical signal from the signal collection module and convert it into the first electrical signal; the boost power supply module includes a first circuit board and a first shielding shell, and the first circuit board is installed inside the first shielding shell; An optical emission spectrum endpoint detection function module is arranged on the optical path of the second optical signal, and is used to receive the second optical signal in a second process scenario, and convert the second optical signal into a second electrical signal, and transmit the second electrical signal to a target industrial computer; the optical emission spectrum endpoint detection function module includes a second spectrum module, and the second spectrum module is connected to the signal collection module, and is used to receive the second optical signal from the signal collection module and convert it into the second electrical signal; the first spectrum module and the second spectrum module are provided with a shielding cover on the outside, and the shielding cover is used to shield external electromagnetic interference; the first spectrum module and the second spectrum module are respectively connected to the shielding cover through a plurality of elastic shock-absorbing fasteners; the shielding cover is electrically connected to a grounding wire; A main board, electrically connected to the interference endpoint detection function module and the optical emission spectrum endpoint detection function module, and used to control the interference endpoint detection module and the optical emission spectrum endpoint detection function module to work normally; A mainboard power supply module, whose input end is connected to an external power supply, and whose output end is electrically connected to the mainboard, the mainboard power supply module is used to supply power to the mainboard; the mainboard power supply module comprises a second circuit board and a second shielding shell, and the second circuit board is installed inside the second shielding shell; The device housing is provided with the mainboard installed inside the device housing, and the internal space of the device housing is divided into two different compartments, and the boost power supply module and the mainboard power supply module are installed in different compartments respectively.

2. The anti-interference integrated etching endpoint detection device according to claim 1, characterized in that: The xenon lamp light source is used to provide a light source for detection in the first process scenario; The boost power supply module has an input end connected to the external power supply and an output end connected to the xenon lamp light source; The first spectrum module is connected to the signal collection module.

3. The anti-interference integrated etching endpoint detection device according to claim 1, characterized in that: The signal collection module includes a first probe, a first optical fiber, a second probe and a second optical fiber; Wherein, the first optical fiber is a one-to-two type, including a single optical fiber end and a double optical fiber end; wherein, the single optical fiber end is connected to the first probe, and the double optical fiber end is respectively connected to the xenon lamp light source and the first spectrum module; Two ends of the second optical fiber are respectively connected to the second probe and the second spectrum module.

4. The anti-interference integrated etching endpoint detection device according to claim 1, characterized in that: The xenon lamp light source comprises a xenon lamp body and a xenon lamp power supply; the xenon lamp power supply is electrically connected to the boost power supply module and is used to directly supply power to the xenon lamp body.

5. The anti-interference integrated etching endpoint detection device according to claim 1, characterized in that: The boost power supply module further includes a capacitor, which is used to supply power to the xenon lamp light source when the xenon lamp light source needs instantaneous high-power discharge.

6. The anti-interference integrated etching endpoint detection device according to claim 1, characterized in that: The boost power supply module and the mainboard power supply module are connected to the external power supply via a filter component, and the filter component is used to filter the external power supply before shunting it.

7. The anti-interference integrated etching endpoint detection device according to claim 6, characterized in that: The filter assembly includes a thermistor, which is used to increase resistance when the current suddenly increases, so as to reduce the impact on the power supply and the circuit.

8. The anti-interference integrated etching endpoint detection device according to claim 7, characterized in that: The filter assembly includes a filter circuit, and the filter circuit is used to reduce ripples.

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