A highly sensitive multifunctional terahertz metamaterial sensor

Abstract

The present invention provides a highly sensitive multifunctional terahertz metamaterial sensor, belonging to the field of terahertz sensing technology. The sensor is composed of a number of identical periodically arranged metamaterial structural units. The specific structure of the metamaterial structural unit is arranged successively from top to bottom as follows: a graphene pattern layer, an indium antimonide dielectric layer, and a metal reflection layer. Among them, the graphene pattern layer is composed of two sets of mutually nested resonant structures, and each set includes four L-shaped strips with equal size, biaxial and centrosymmetric. The present invention utilizes the electro-tunability of graphene and the thermal and magnetic sensitivity characteristics of indium antimonide to achieve excellent performance and diverse functions in sensing, expanding its application scope in the field of terahertz sensing.

Description

Technical Field

[0001] The present invention relates to the technical field of terahertz sensors, and more particularly to a highly sensitive multifunctional terahertz metamaterial sensor. Background Art

[0002] Terahertz (THz) waves generally refer to electromagnetic waves in the frequency range of 0.1 - 10 THz, and have characteristics such as low energy, high penetrability, transience, and non - ionizing property. At the same time, due to the relatively wide frequency range and high resolution, terahertz waves can effectively detect substances. These characteristics make terahertz waves have broad application prospects in many fields such as security detection, material property research, and sensing detection.

[0003] Metamaterial is an artificially designed electromagnetic material with a periodic arrangement of sub - wavelength sizes, and has unique properties that natural materials do not have, such as negative refractive index, negative magnetic permeability, and negative dielectric constant. Natural materials cannot produce effective electromagnetic responses in the terahertz band, while metamaterials can interact with them to produce strong electromagnetic coupling effects, and can very sensitively reflect changes in the dielectric constant of the surrounding medium. This characteristic makes metamaterials have great application potential in the sensing field, and can achieve highly sensitive detection of small changes in the surrounding environment with relatively high resolution.

[0004] Currently, the existing terahertz metamaterial sensors have low sensitivity and relatively single functions, and can only detect analytes in certain specific environments, and cannot broaden the application scenarios. Summary of the Invention

[0005] The present invention aims to at least improve one of the technical problems existing in the prior art. To this end, the present invention proposes a highly sensitive multifunctional terahertz metamaterial sensor.

[0006] According to an embodiment of the first aspect of the present invention, the highly sensitive multifunctional terahertz metamaterial sensor is composed of a plurality of identical periodically arranged terahertz metamaterial units;

[0007] The terahertz metamaterial units are arranged from top to bottom in sequence as a graphene pattern layer on the top, an indium antimonide dielectric layer in the middle, and a metal reflection layer on the bottom, where,

[0008] The graphene pattern layer includes two sets of mutually nested resonant units, and each resonant unit includes an inner first resonant structure and an outer second resonant structure; each of the first resonant structure and the second resonant structure is composed of four L - shaped strips with equal sizes, biaxial and centrosymmetric.

[0009] The high-sensitivity multifunctional terahertz metamaterial sensor according to an embodiment of the present invention has a maximum quality factor Q of up to 64. It can not only sense the refractive index of the object to be measured, but also sense the physical fields (heat, magnetism) of the environment and the applied gate voltage. Among them, the refractive index sensitivity can reach up to 830 GHz / RIU, and the magnetic field sensitivity can reach 1700 GHz / T.

[0010] The high-sensitivity multifunctional terahertz metamaterial sensor according to an embodiment of the present invention has a flexible regulation method. For sensing tests in different application environments, its resonant frequency can be dynamically adjusted without changing the material structure, compensating for the deviation of the sensor performance caused by manufacturing errors, and enabling it to have higher geometric parameter tolerance.

[0011] The high-sensitivity multifunctional terahertz metamaterial sensor according to an embodiment of the present invention has a simple structure, is easy to process, and has low requirements for processing accuracy.

[0012] In a possible implementation manner of the first aspect, the period of the terahertz metamaterial unit is p = 60 μm to 65 μm, and the period is less than the working wavelength. The unit designed based on this period can effectively provide the required resonant characteristics, ensure a good response of the sensor to terahertz waves, and is also relatively easy to implement in the manufacturing process, with a certain geometric tolerance.

[0013] In a possible implementation manner of the first aspect, the graphene pattern layer of the metamaterial unit is bilaterally symmetric and centrosymmetric with respect to the terahertz metamaterial unit structure. The metamaterial unit depends on the symmetric structure, resulting in the sensor being insensitive to the polarization of THz waves, improving the sensitivity and stability of the sensor.

[0014] In a possible implementation manner of the first aspect, the gap range between the L-shaped strips of the inner first resonant structure is l1 = 0.5 μm to 1.4 μm, and the width range is w1 = 3 μm to 3.5 μm. The gap range between the L-shaped strips of the second resonant structure is l2 = 3.9 μm to 4.5 μm, and the width range is w2 = 6.5 μm to 7 μm. The reasonable gap and width range have a small resonant frequency difference and provide a wide geometric tolerance for preparation. The reasonable gap and width range can be optimized to improve the sensitivity and selectivity of the sensor, and are also relatively easy to control in the manufacturing process.

[0015] In a possible implementation manner of the first aspect, the graphene pattern layer uses single-layer graphene with a thickness of h1 = 0.34 nm.

[0016] In a possible implementation manner of the first aspect, the thickness range of the indium antimonide dielectric layer is h2 = 5.1 μm to 5.5 μm.

[0017] In a possible implementation of the first aspect, the thickness of the metal reflection layer needs to be greater than its skin depth to effectively reflect terahertz waves, and 0.2 μm is used to save costs.

[0018] In a possible implementation of the first aspect, the material of the metal reflection layer is any one of gold, silver, and copper.

[0019] Additional aspects and advantages of the present invention will be given in part in the following description, become apparent in part from the following description, or be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0021] Figure 1 It is a schematic diagram of the overall structure of the highly sensitive multifunctional terahertz metamaterial sensor of the present invention;

[0022] Figure 2 It is a three-dimensional schematic diagram of the periodic structure sensor unit structure of the sensor of the present invention;

[0023] Figure 3 It is a top view of the unit structure of the sensor of the present invention;

[0024] Figure 4 It is an absorption spectrum diagram of the sensor of the present invention;

[0025] Figure 5 It is an absorption spectrum diagram of the sensor of the present invention at different Fermi levels;

[0026] Figure 6 It is an absorption spectrum diagram of the sensor of the present invention at different temperatures;

[0027] Figure 7 It is an absorption spectrum diagram of the sensor of the present invention at different environmental refractive indices;

[0028] Figure 8 It is a linear relationship fitting diagram of the resonance frequency transformation of the sensor of the present invention at different environmental refractive indices;

[0029] Figure 9 It is an absorption spectrum diagram of the sensor of the present invention at different magnetic induction intensities after applying an external magnetic field in the x direction;

[0030] Figure 10This is a fitting diagram of the linear relationship of the resonant frequency transformation of the sensor of the present invention under different magnetic induction intensities after an external magnetic field is applied in the x direction.

[0031] Reference numerals: graphene pattern layer 1, indium antimonide dielectric layer 2, metal reflection layer 3. Detailed implementation manners

[0032] The embodiments of the present invention will be described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0033] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there can also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which the present invention belongs. The terms used in the specification of the present invention herein are only for the purpose of describing specific implementation manners and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0035] The terms "first", "second", "third", etc. in the specification and claims of the present application and the accompanying drawings are used to distinguish different objects and are not used to describe a specific order. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a series of steps or units are included, or optionally, steps or units not listed are further included, or optionally, other steps or units inherent to these processes, methods, products or devices are further included.

[0036] Only parts related to the present application are shown in the drawings, not all of the content. Before discussing the exemplary embodiments in more detail, it should be mentioned that some exemplary embodiments are described as processes or methods depicted as flowcharts. Although the flowcharts describe the operations (or steps) as sequential processes, many of the operations can be performed in parallel, concurrently or simultaneously. In addition, the order of the operations can be rearranged. When the operations are completed, the process can be terminated, but there can also be additional steps not included in the drawings. The process can correspond to a method, function, procedure, subroutine, subprogram, etc.

[0037] As used in this specification, the terms "component," "module," "system," "unit," and the like are used to refer to computer-related entities, hardware, firmware, a combination of hardware and software, software, or software in execution. For example, a unit can be, but is not limited to, a process running on a processor, a processor, an object, an executable file, an execution thread, a program, and / or distributed between two or more computers. In addition, these units can be executed from various computer-readable media having various data structures stored thereon. Units can communicate, for example, via local and / or remote processes based on signals having one or more data packets (e.g., data from a second unit interacting with another unit in a local system, a distributed system, and / or a network, such as the Internet, which interacts with other systems via signals).

[0038] Currently, existing terahertz metamaterial sensors have low sensitivity and limited functionality, only enabling detection of analytes in certain specific environments and failing to broaden their application scenarios. Therefore, based on the electrical tunability of graphene and the thermal and magnetic sensitivity of indium antimonide, this paper proposes a highly sensitive, multifunctional terahertz metamaterial sensor that can analyze and detect changes in various analytes or physical fields, including refractive index, temperature, and magnetic field.

[0039] According to the embodiment of the first aspect of the present invention, the multifunctional terahertz metamaterial sensor with high sensitivity is composed of a plurality of identical periodically arranged terahertz metamaterial units;

[0040] The terahertz metamaterial unit is arranged from top to bottom in the following order: a top graphene pattern layer, a middle indium antimonide dielectric layer, and a bottom metal reflective layer, wherein:

[0041] The graphene pattern layer includes two groups of mutually nested resonance units, each of which includes an inner first resonance structure and an outer second resonance structure; each group of the first resonance structure and the second resonance structure is composed of four equal-sized, biaxial and centrosymmetrical L-shaped strips.

[0042] The highly sensitive, multifunctional terahertz metamaterial sensor according to an embodiment of the present invention achieves a quality factor (Q) of up to 64. It can sense not only the refractive index of the object being measured but also environmental physical fields (thermal and magnetic) and applied gate voltage. The refractive index sensitivity can reach up to 830 GHz / RIU, and the magnetic field sensitivity can reach 1700 GHz / T.

[0043] The highly sensitive multifunctional terahertz metamaterial sensor of the embodiment of the present invention has a flexible control method. For sensing tests in different application environments, its resonant frequency can be dynamically adjusted without changing the material structure, thereby compensating for deviations in sensor performance caused by manufacturing errors and providing higher geometric parameter tolerance.

[0044] The highly sensitive multifunctional terahertz metamaterial sensor according to the embodiment of the present invention has a simple structure, is easy to process, and has low requirements for processing accuracy.

[0045] It should be noted that the period of the terahertz metamaterial unit is p = 60 μm to 65 μm. Preferably, the arrangement period p = 60 μm, so as to effectively match the terahertz wavelength and provide the required resonance characteristics. It should be noted that the graphene pattern layer of the metamaterial unit is axisymmetric and centrosymmetric about the terahertz metamaterial unit structure. The metamaterial unit depends on the symmetric structure, resulting in the sensor being insensitive to the polarization of THz waves and improving the sensitivity and stability of the sensor.

[0046] It should be noted that the gap range between the L-shaped strips of the inner first resonance structure is l 1= 0.5 μm to 1.4 μm, and the width range is w1 = 3 μm to 3.5 μm. Preferably, the gap l1 = 0.5 μm and the width w1 = 3 μm. The gap range between the L-shaped strips of the outer second resonance structure is l2 = 3.9 μm to 4.5 μm, and the width range is w2 = 6.5 μm to 7 μm. Preferably, the gap l2 = 4.1 μm and the width w2 = 6.5 μm to ensure the best performance of the structure.

[0047] It should be noted that the bottom metal reflection layer is copper with a conductivity of 5.8×10 7 S / m and a thickness of 0.2 μm to reduce the manufacturing cost.

[0048] It should be noted that the material of the metal reflection layer is any one of gold, silver, and copper.

[0049] It should be noted that the thickness of the metal reflection layer needs to be greater than or equal to 0.2 μm to ensure its effective reflection of terahertz waves.

[0050] In this embodiment, the highly sensitive multifunctional terahertz metamaterial sensor of the present invention is as Figure 1 shown. The sensor is composed of a plurality of identical metamaterial structure units arranged in an array, as Figure 2As shown, each metamaterial structural unit comprises, from top to bottom, a graphene pattern layer 1, an indium antimonide dielectric layer 2, and a metal reflective layer 3. Each graphene pattern layer includes a first resonant structure (inner side) and a second resonant structure (outer side) of identical biaxial and centrosymmetric shapes. The incident terahertz wave resonates efficiently with the surface of the sensor unit within a specific frequency range, generating a high-Q absorption peak. Building on the original spectral response, this is extended to the field of terahertz sensing, effectively expanding the device's application scenarios and uses. By deeply integrating the inherent mechanism of resonant peak generation with the properties of the device material, the detection types and scope are further broadened, meeting the needs for high-sensitivity detection of various analytes in diverse environments. It can be used as a refractive index sensor, physical field sensor, and gate voltage sensor.

[0051] As a refractive index sensor, when the graphene pattern layer is coated with a certain thickness of analytes with different refractive indices, or when the entire device is completely immersed in the analyte to be measured, changes in the sensor's impedance cause significant shifts in the absorption spectrum. Furthermore, changes in external physical fields (thermal, magnetic) or gate voltage can directly affect the electromagnetic properties of the materials (such as graphene and indium antimonide) that make up the terahertz metamaterial sensor, leading to varying degrees of frequency shifts in the dual narrowband absorption peaks.

[0052] like Figure 1 The figure shows the overall structure of the sensor. Figure 2 This is a schematic diagram of a sensor structure unit. The terahertz metamaterial sensor consists of several sensor structure units periodically arranged in the x and y directions. Adjacent sensor structure units are identical and have no gaps between them. The sensor structure unit consists of a top graphene patterned layer, a middle indium antimonide dielectric layer, and a bottom metal reflector.

[0053] like Figure 3 This is a top view of the sensor structure unit. Each of the top graphene patterns is composed of an inner resonant structure and an outer resonant structure nested together. Each group of resonant structures is composed of four equal-sized, biaxial and centrosymmetrical L-shaped strips.

[0054] It should be noted that the thickness of the indium antimonide dielectric layer ranges from h2=5.1 μm to 5.5 μm, preferably, the thickness is h2=5.5 μm, and its dielectric constant can be described by the Drude model:

[0055] ,

[0056] ,

[0057] in, =15.68 is the high frequency dielectric constant, and represent the damping constant and the plasma frequency, respectively; and represent the vacuum permittivity and the effective mass of free carriers, respectively. represents the intrinsic carrier concentration, which can be further described by the formula where and represent the Boltzmann constant and the absolute temperature, respectively.

[0058] It should be noted that the top graphene material is monolayer graphene with a thickness of h1 = 0.34 nm, and its conductivity can be described by the Kubo formula:

[0059] ,

[0060] ,

[0061] ,

[0062] where , and represent the Boltzmann constant, the Fermi level of graphene, and the relaxation time, respectively. T and ℏ represent the temperature and the reduced Planck constant, respectively. In the terahertz band range, when the condition is satisfied, the conductivity of the graphene material can be simplified to the Drude model:

[0063] ,

[0064] To highlight the advantages, features, and purposes of the present invention, the present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0065] The numerical calculation is implemented by the multi-physics simulation software COMSOL Multiphysics. Periodic boundary conditions are set in the x and y directions to simulate an infinitely arranged periodic array, and perfect matching layers are set in the upper and lower regions of the sensor structure unit to eliminate the influence of reflected terahertz waves. The terahertz wave is vertically incident on the device surface along the negative z-axis direction, and the electric field is polarized along the x direction.

[0066] Example 1:

[0067] The terahertz metamaterial sensor has three uses, one of which is used as a refractive index sensor.

[0068] When the temperature of indium antimonide is 200 K and the Fermi level of graphene is 1 eV, Figure 4This is the absorptivity spectrum of the sensor structure unit, showing 99.27% and 97.96% absorptivity at 3.20THz and 3.99THz, respectively, essentially achieving perfect dual-narrowband absorption. The absorption peak A at the low frequency (3.20THz) and the absorption peak B at the high frequency (3.99THz) are very steep, with corresponding full widths at half maximum (FWHM) of 0.05THz and 0.13THz, respectively.

[0069] Figure 5 The absorption curve of the device changes when the terahertz metamaterial sensor is fully placed in the test environment within the refractive index range of 1.0 to 1.3. As the refractive index increases in equal steps, absorption peaks A and B gradually shift toward lower frequencies, exhibiting a significant frequency shift, demonstrating the device's refractive index sensing capability.

[0070] The important indicators of sensor performance can be expressed by the quality factor (Q) and sensitivity ( S R ) two parameters, which can be measured by the formula and (Unit: GHz / RIU) is used for calculation, where Δf and Δn are the changes in resonance frequency and refractive index. The quality factors of resonance peaks A and B are 64 and 30 respectively, and the refractive index sensitivities are 830GHz / RIU and 510GHz / RIU respectively. Figure 6 Compared with traditional terahertz metamaterial sensors, the sensor has a steeper sensing curve, higher sensitivity, and superior sensing performance. The terahertz metamaterial sensor can provide a solution to overcome the problems of low quality factor and low sensitivity.

[0071] Embodiment 2:

[0072] The terahertz metamaterial sensor has three uses, one of which is used as a gate voltage sensor.

[0073] When the applied voltage changes, the conductivity of the graphene in the sensor structure changes accordingly. This change in material properties directly affects the impedance characteristics of the sensor structure, causing the resonant frequency of the sensing curve to shift, achieving the purpose of monitoring and sensing changes in the external environment, providing a solution for applications in different scenarios.

[0074] When a gate voltage is applied to the sensor structure unit, the electromagnetic properties of the graphene material will change, enabling accurate sensing of gate voltages of different intensities.

[0075] When the sensor structure unit applies a gate voltage, the Fermi level of graphene will change. The relationship between the two is:

[0076] ,

[0077] wherein represents the characteristic length dimension of graphene , represents the bias voltage, is the Fermi velocity. Refer to Figure 7 , the sensing curves of resonance peaks A and B in the Fermi energy level change range of 0.4 - 1.0 eV. Different degrees of red shift and blue shift occur for the two resonance peaks. The resonance frequency point of peak A undergoes a red shift, with a change range of approximately 0.5 THz; the resonance frequency point of peak B undergoes a blue shift, with a change range of approximately 0.7 THz. This indicates that any resonance peak of the terahertz metamaterial sensor can meet the high - sensitivity requirements for sensing different external voltages.

[0078] Example 3:

[0079] The terahertz metamaterial sensor has three uses, one of which is used as a physical - field sensor.

[0080] For the indium antimonide material of the sensor structure unit, its inherent carrier concentration is very sensitive to temperature, and thus its relative permittivity changes. When the external temperature changes, the response of the sensor structure unit to electromagnetic waves changes significantly, endowing the device with temperature - sensing performance.

[0081] When the external temperature increases from 200 K in equal steps to 250 K, refer to Figure 8 , the amplitudes of resonance peaks A and B basically remain unchanged, and the resonance frequency points both move towards the high - frequency direction. The adjustable ranges of peak A and B are 3.2 THz - 3.39 THz and 3.99 THz - 4.17 THz respectively, fully reflecting the sensitivity of the device to temperature changes. It can be used as a terahertz temperature sensor and has potential application value in the field of terahertz sensing.

[0082] When a magnetic field is applied, due to the magneto - optical effect in the indium antimonide material of the sensor structure unit, the dielectric constant tensor will change, showing obvious anisotropy, which is particularly significant at terahertz frequencies. For example, when a magnetic field is applied along the x - direction, the change in the indium antimonide dielectric constant is in tensor form:

[0083] ,

[0084] ,

[0085] ,

[0086] When a magnetic field is applied in the x - direction and the magnetic field strength increases from 1.1 T in equal steps to 1.4 T, refer to Figure 9, the resonance peaks A and B remain basically unchanged, with only a slight blue shift, but a new resonance peak C appears at 2.09 THz. As the magnetic field strength increases, peak C shows an obvious blue shift. The adjustable range of resonance peak C is 2.09 THz to 2.44 THz. And because peak C is a specific resonance peak that appears only after the application of the magnetic field, it fully reflects the sensitivity of the device to magnetic field changes and can be used as a terahertz magnetic field sensor, broadening its application range in the terahertz sensing field.

[0087] The magnetic field sensitivity of the sensor performance can be calculated by the formula (unit: GHz / T), where and are the change in resonance frequency and the change in magnetic field strength respectively. The magnetic field sensitivity of resonance peak C reaches 1700 GHz / T, referring to Figure 10 .

[0088] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention.

[0089] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "schematic embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example.

[0090] Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all embodiments. The mention of "embodiments" in this context means that the specific features, structures, or characteristics described in connection with the embodiments may be included in at least one embodiment of the present application. The phrase may not necessarily refer to the same embodiment at various places in the specification, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art can explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts fall within the scope of protection of the present application.

[0091] Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention. The scope of the present invention is defined by the claims and their equivalents.

Claims

1. A highly sensitive multifunctional terahertz metamaterial sensor, characterized in that, The multifunctional terahertz metamaterial sensor is composed of a number of identical periodically arranged terahertz metamaterial units, and the period of the terahertz metamaterial units is p = 60 μm to 65 μm; The terahertz metamaterial units are arranged from top to bottom in sequence as a graphene pattern layer at the top layer, an indium antimonide dielectric layer in the middle, and a metal reflection layer at the bottom layer. Among them, the graphene pattern layer is biaxially and centrosymmetric with respect to the terahertz metamaterial unit structure. The graphene pattern layer includes two sets of mutually nested resonant units, and the resonant units include a first resonant structure and a second resonant structure; both the first resonant structure and the second resonant structure are composed of four L-shaped strips with equal sizes, biaxially and centrosymmetric. The gap range between the L-shaped strips of the first resonant structure is l1 = 0.5 μm to 1.4 μm, and the width range is w1 = 3 μm to 3.5 μm. The gap range between the L-shaped strips of the second resonant structure is l2 = 3.9 μm to 4.5 μm, and the width range is w2 = 6.5 μm to 7 μm.

2. The highly sensitive multifunctional terahertz metamaterial sensor according to claim 1, characterized in that The graphene pattern layer uses single-layer graphene with a thickness of h1 = 0.34 nm.

3. The highly sensitive multifunctional terahertz metamaterial sensor according to claim 1, characterized in that, The thickness range of the indium antimonide dielectric layer is h2 = 5.1 μm to 5.5 μm.

4. The highly sensitive multifunctional terahertz metamaterial sensor according to claim 1, characterized in that, The thickness of the metal reflection layer is 0.2 μm.

5. The highly sensitive multifunctional terahertz metamaterial sensor according to claim 1, characterized in that, The material of the metal reflection layer is any one of gold, silver, and copper.

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