Glass substrate and preparation method thereof, and electronic device

Abstract

The present invention provides a glass substrate and a preparation method thereof, and an electronic device. The glass substrate includes: a bottom layer, a top layer, a glass plate laminate, and a glass bonding laminate. The glass plate laminate includes m glass plate single layers, and the glass bonding laminate includes m+1 glass bonding single layers. The melting points of the glass bonding single layers are lower than the melting points of the glass plate single layers. The glass bonding single layer includes glass powder and an organic adhesive with a content of 70%-85%. The glass powder is made using special process steps. In the present application, the glass bonding single layer has a low melting point, a low glass transition point, and high uniformity, and the raw materials are inexpensive, rich in sources, low in synthesis temperature, and simple in process, which is conducive to industrial production. The glass bonding single layer has a lower thermal expansion coefficient, higher strength, better chemical stability and thermal stability, and has a high bonding force with high borosilicate glass and microcrystalline glass, and the glass bonding single layer has good insulation and higher safety.

Description

Technical Field

[0001] The present invention relates to the technical field of glass production, and in particular to a glass substrate and a preparation method thereof, and an electronic device. Background Art

[0002] With the development of economy and the progress of science and technology, various devices are developing towards multifunctional integration, miniaturization, reliability, stability, environmental protection, etc. At present, high-power chip packaging devices can be used in aerospace, microwave communication, electronic components and other fields. With the development of devices towards multifunctional integration, miniaturization and lightness, traditional chip packaging is difficult to meet the reliability requirements of current devices.

[0003] The traditional chip packaging process is used to install semiconductor integrated circuit chips. The substrate is made of PCB resin material, which plays the role of conducting, fixing, sealing, protecting the chip and dissipating heat. Chip packaging includes the process steps of wafer cutting, chip mounting, wire bonding, injection molding, and packaging testing.

[0004] However, organic substrates made of PCB resin have defects such as low thermal conductivity, high dielectric loss, and slow signal transmission speed. Therefore, more advanced glass substrates are used to replace traditional PCB substrates. However, the bonding force between layers of glass substrates in the prior art is weak, and problems such as weak bonding and even film shedding often occur. Summary of the invention

[0005] The object of the present invention is to provide a glass substrate and a preparation method thereof, and an electronic device. The glass substrate provided in the present application has a lower thermal expansion coefficient, higher strength, better chemical stability and thermal stability, has a high bonding strength with high borosilicate glass and microcrystalline glass, and the glass bonding single layer has good insulation and higher safety.

[0006] The present application provides a glass substrate, comprising: a bottom layer, a top layer, and a glass plate laminate and a glass bonding laminate arranged between the bottom layer and the top layer;

[0007] The glass plate laminate comprises m glass plate single layers, where m is an integer greater than or equal to 2; the m glass plate single layers are all arranged between the bottom layer and the top layer;

[0008] The glass bonding laminate comprises (m+1) glass bonding single layers, which are respectively arranged between any two of the glass plate single layers, between the bottom layer and the bottommost glass bonding single layer, and between the topmost glass bonding single layer and the top layer;

[0009] The melting points of the (m+1) glass bonding single layers are all lower than the melting points of the m glass plate single layers; the melting point of the glass bonding single layer is in the range of 300° C. to 500° C., the glass bonding single layer is insulating, the softening temperature of the glass bonding single layer is lower than the softening temperature of the glass plate single layer, and the glass bonding single layer serves to connect the upper and lower layers;

[0010] The glass bonding single layer is a glass paste comprising glass powder and an organic binder, wherein the content of the glass powder and the organic binder reaches 70%-85%;

[0011] The raw materials of the glass powder include: 10% to 30% by mass of boron trioxide, 5% to 15% by mass of silicon dioxide, 55% to 70% by mass of zinc oxide, 0% to 25% by mass of vanadium pentoxide, 0% to 2% by mass of antimony trioxide, and 0% to 2% by mass of germanium dioxide.

[0012] In one embodiment, the raw materials of the single layer of the glass plate include: 77% to 80% by mass of silicon dioxide, 16% to 20% by mass of boron oxide, 1.5% to 2.7% by mass of potassium oxide, 1.3% to 1.6% by mass of aluminum oxide, and 0.05% to 0.5% by mass of rare earth oxide, wherein the sum of the mass fractions of silicon dioxide, boron oxide, potassium oxide and aluminum oxide is 99.5% to 99.9%; the rare earth oxide includes one or more oxides of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium or yttrium.

[0013] In one embodiment, m is 6, and the 6 glass sheet single layers are, from bottom to top, a first glass sheet single layer, a second glass sheet single layer, a third glass sheet single layer, a fourth glass sheet single layer, a fifth glass sheet single layer, and a sixth glass sheet single layer;

[0014] The 7 glass bonding single layers are, from bottom to top, a first glass bonding single layer, a second glass bonding single layer, a third glass bonding single layer, a fourth glass bonding single layer, a fifth glass bonding single layer, a sixth glass bonding single layer, and a seventh glass bonding single layer;

[0015] The first glass bonding layer is disposed between the bottom layer and the first glass sheet layer; the second glass bonding layer is disposed between the first glass sheet layer and the second glass sheet layer; the third glass bonding layer is disposed between the second glass sheet layer and the third glass sheet layer; the fourth glass bonding layer is disposed between the third glass sheet layer and the fourth glass sheet layer; the fifth glass bonding layer is disposed between the fourth glass sheet layer and the fifth glass sheet layer; the sixth glass bonding layer is disposed between the fifth glass sheet layer and the sixth glass sheet layer; the seventh glass bonding layer is disposed between the sixth glass sheet layer and the top layer;

[0016] The thickness of the first glass plate single layer is 0.2 mm, the thickness of the second glass plate single layer is 0.3 mm, the thickness of the third glass plate single layer is 0.3 mm, the thickness of the fourth glass plate single layer is 0.2 mm, the thickness of the fifth glass plate single layer is 0.2 mm, and the thickness of the sixth glass plate single layer is 0.2 mm.

[0017] In one embodiment, the glass substrate comprises a plurality of via holes, and a maximum penetration depth of the plurality of via holes is equal to the sum of the thickness of m single layers of the glass plate and the thickness of (m-1) single layers of the glass bonding.

[0018] In one embodiment, the diameter of the via hole is 0.03-0.07 mm, and the distance between any two adjacent via holes is greater than or equal to 0.04 mm.

[0019] In one embodiment, the glass substrate further comprises a first metal disposed between the glass plate single layer and the glass bonding single layer; the first metal is obtained by screen printing;

[0020] The first metal is disposed on the first surface of each single layer of the glass plate, or the first metal is disposed on the first surface and the second surface of each single layer of the glass plate, the first surface and the second surface are two surfaces that are opposite to each other in the stacking direction of the glass substrate, and the first surface is closer to the bottom layer. The first metal is filled into the via hole, and the first metal is selected from metal materials such as copper, silver, gold, and nickel.

[0021] The present application provides a method for preparing a glass substrate, which adopts the following steps to form a glass substrate as described in any one of the above items:

[0022] S100, providing a base layer, and forming a first glass bonding single layer on the base layer;

[0023] S200, forming a spacer metal layer on the first glass bonding single layer, and forming a first glass plate single layer on the surface of the spacer metal layer;

[0024] S300, performing a multi-step operation on the first glass sheet single layer to form the first glass sheet single layer with upper and lower surfaces being conductive;

[0025] Among them, S300 includes:

[0026] S310, performing laser processing on the first glass sheet single layer to form patterned via holes;

[0027] S320, forming a conductive metal on the upper surface of the first glass plate single layer by magnetron sputtering, wherein the thickness of the conductive metal is 1 μm to 10 μm;

[0028] S330, filling the via holes by electroplating to obtain the first glass plate single layer with a minimum line spacing of 0.05 mm and a via hole diameter of 0.05 mm, with the upper and lower surfaces being connected;

[0029] S340, forming a second glass bonding single layer on the first glass plate single layer;

[0030] S400, forming a second glass sheet single layer on the second glass bonding single layer;

[0031] S500, performing a multi-step operation on the second glass sheet single layer to form the second glass sheet single layer with upper and lower surfaces being conductive; the step of forming the second glass sheet single layer with upper and lower surfaces being conductive is the same as the step of forming the first glass sheet single layer with upper and lower surfaces being conductive;

[0032] S600, further performing the steps of forming the glass bonding single layer and forming the glass plate single layer, until the (m+1)th glass bonding single layer is manufactured;

[0033] S700, forming a top layer on the upper surface of the (m+1)th glass bonding single layer;

[0034] Wherein, the (m+1) glass bonding single layers (31) are all glass pastes including glass powder and organic adhesive, and the content of the glass powder and the organic adhesive reaches 70%-85%;

[0035] The glass powder is prepared by the following steps:

[0036] S1, taking 10% to 30% of boron trioxide, 5% to 15% of silicon dioxide, 55% to 70% of zinc oxide, 0% to 25% of vanadium pentoxide, 0% to 2% of antimony trioxide, and 0% to 2% of germanium dioxide in mass fraction, and mixing them to obtain a mixture;

[0037] S2, heating and melting the mixed material to obtain molten glass;

[0038] S3, quenching the glass liquid with water to obtain a glass body;

[0039] S4, crushing the glass body to obtain the glass powder.

[0040] In one embodiment, the single layer of glass sheet is made by the following steps:

[0041] S10, taking 77% to 80% by mass of silicon dioxide, 16% to 20% of boron oxide, 1.5% to 2.7% of potassium oxide, 1.3% to 1.6% of aluminum oxide, and 0.05% to 0.5% of rare earth oxide, and mixing them to form mixed particles; wherein the sum of the mass fractions of silicon dioxide, boron oxide, potassium oxide, and aluminum oxide is 99.5% to 99.9%; the rare earth oxide includes one or more oxides of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium, or yttrium;

[0042] S20, placing the mixed particles into a crucible for dissolution, wherein the dissolution is carried out at a high temperature of 1450° C. to 1600° C., and the mixture is melted and homogenized for 32 hours to 48 hours to form a preformed glass;

[0043] S30, placing the preformed glass into a forming container and performing extremely rapid cooling to form silicate glass.

[0044] The present application provides an electronic device, comprising: a glass substrate using any one of the above-mentioned glass substrates, or a glass substrate prepared by the method for preparing a glass substrate using any one of the above-mentioned glass substrate preparation methods.

[0045] In one embodiment, the electronic device is an artificial intelligence computing chip, a photonic chip, a high-power solid-state laser chip, a 6G transmission chip, or a high-power radar chip.

[0046] The silicate glass provided in this application has the following beneficial effects:

[0047] 1. The glass bonding monolayer is a glass paste including glass powder, organic binder and water. The glass powder is prepared by a high-temperature melting-water quenching process. The glass bonding monolayer prepared by the glass powder has a low melting point, a low glass transition point, and high uniformity. The raw materials are cheap and abundant in source, the synthesis temperature is low, the process is simple, and it is conducive to industrial production.

[0048] 2. The glass-bonded single layer has a lower thermal expansion coefficient, higher strength, better chemical stability and thermal stability, and has a high bonding strength with high borosilicate glass and microcrystalline glass. The glass-bonded single layer has good insulation and higher safety.

[0049] 3. The single layer of glass plate formed by the preparation method of the present application has good performance: density is 2.15±0.25g·cm -3 , Young's modulus is 70.00GPa, and the thermal expansion coefficient is (3±0.5)×10 in the temperature range of 0-300℃. -6 ℃ -1 The logarithmic volume resistivity at 250℃ is 12.3Ω*cm, the logarithmic volume resistivity at 350℃ is 9.9Ω*cm, the dielectric constant at room temperature 20℃ and 1MHz is 3.9±0.1, the loss at room temperature 20℃ and 1MHz is less than 0.0001, and the transmission signal speed is greater than 350GB.

[0050] 4. The present application involves a method for preparing a glass substrate, which differs from the prior art in that: First, the special structural setting of the glass substrate, namely the structural setting of the glass plate laminate and the glass bonding laminate, makes the overall structure of the glass substrate more stable. Second, the special preparation method and excellent properties of the glass bonding single layer, the melting point of the glass bonding single layer is in the range of 300°C to 500°C, the glass bonding single layer is insulating, the softening temperature of the glass bonding single layer is lower than the softening temperature of the glass plate single layer, and the glass bonding single layer plays a role in combining the upper and lower layers. Third, the performance difference between the glass bonding single layer and the glass plate single layer makes the glass bonding single layer have a high bonding force with the glass plate single layer or other high borosilicate glass and microcrystalline glass, and the glass substrate as a whole has good insulation and higher safety.

[0051] 5. Glass substrates are used in semiconductor chip packaging structures to replace existing PCB circuit boards, improve chip integration, increase the number of chips placed per unit area, and increase the transmission rate between chips to more than 300G. The glass substrate is used to form electronic devices including artificial intelligence computing chips, photonic chip packaging, high-power solid laser chips, 6G transmission chips, or high-power radar chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0053] Figure 1 A schematic structural diagram of a glass substrate provided in one embodiment of the present invention;

[0054] Figure 2 A schematic structural diagram of a glass substrate provided in another embodiment of the present invention;

[0055] Figure 3 The specific structure of the contact metal on the upper and lower sides of each glass sheet is shown in the figure;

[0056] Figure 4a , Figure 4b and Figure 4c Two bottom-level and one top-level implementable structures are illustrated in FIG.

[0057] Figure 5-Figure 9 The diagram shows the patterned structure after through holes are set in different layers of glass sheets.

[0058] Description of reference numerals:

[0059] Glass substrate 100:

[0060] Bottom layer 11, bottom layer single-layer glass 11a, metal layer 11b, top layer 12, top layer single-layer glass 12a, metal layer 12b, glass plate stack 20, glass plate single layer 21, first metal 21a, glass bonding stack 30, glass bonding single layer 31, and conductive hole 40. DETAILED DESCRIPTION

[0061] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0062] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0063] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0064] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the invention is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0065] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0066] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0067] This application Figure 1 and Figure 2 The basic structural film layers of the glass substrate 100 in two different embodiments are illustrated. Figure 3 The specific structure of the contact metal above and below each glass plate single layer 21 is shown in FIG. Figure 4a , Figure 4b and Figure 4c 2 and 3 respectively illustrate two possible structures of the bottom layer 11 and one top layer 12. Figure 5-Figure 9 The patterned structure after the through holes 40 are provided in the glass sheet single layers 21 of different layers is shown.

[0068] See also Figure 1 and Figure 2 The present application provides a glass substrate 100, comprising: a bottom layer 11, a top layer 12, a glass plate laminate 20, and a glass bonding laminate 30. The bottom layer 11 and the top layer 12 both comprise a metal layer, the top layer 12 is connected to a chip wafer, and the bottom layer 11 is connected to other circuit boards or component circuits.

[0069] The glass plate laminate 20 includes m glass plate single layers 21, where m is an integer greater than or equal to 2. The m glass plate single layers 21 are all arranged between the bottom layer 11 and the top layer 12. The m glass plate single layers 21 are arranged with other film layers spaced apart from each other.

[0070] The glass bonding laminate 30 includes (m+1) glass bonding single layers 31. The (m+1) glass bonding single layers 31 are all arranged between the bottom layer 11 and the top layer 12, and the (m+1) glass bonding single layers 31 are arranged with other film layers spaced apart from each other. The m glass bonding single layers 31 are respectively arranged between any two of the glass plate single layers 21, between the bottom layer 11 and the bottommost glass bonding single layer 31, and between the topmost glass bonding single layer 31 and the top layer 12.

[0071] The melting points of the (m+1) glass bonding layers 31 are all lower than the melting points of the m glass plate layers 21. The melting point of the glass bonding layer 31 is in the range of 300°C to 500°C, the glass bonding layer 31 is insulating, the softening temperature of the glass bonding layer 31 is lower than the softening temperature of the glass plate layer 21, and the glass bonding layer 31 plays a role in bonding the upper and lower layers.

[0072] The glass bonding single layer 31 is a glass paste comprising glass powder and an organic binder, wherein the content of the glass powder and the organic binder reaches 70%-85%. The glass powder is a micron-sized glass powder for electronic paste with a low melting point.

[0073] The raw materials of the glass powder include: 10% to 30% by mass of boron trioxide, 5% to 15% by mass of silicon dioxide, 55% to 70% by mass of zinc oxide, 0% to 25% by mass of vanadium pentoxide, 0% to 2% by mass of antimony trioxide, and 0% to 2% by mass of germanium dioxide.

[0074] The glass powder is prepared by the following steps:

[0075] S1, take 10% to 30% of boron trioxide, 5% to 15% of silicon dioxide, 55% to 70% of zinc oxide, 0% to 25% of vanadium pentoxide, 0% to 2% of antimony trioxide, and 0% to 2% of germanium dioxide by mass fraction, and mix them to obtain a mixture. In this step, the above raw materials are prepared according to the mass ratio of the above specific components, and the prepared raw materials are added to the ball mill and fully mixed. Before S1, it also includes the steps of pickling, strong magnetic adsorption to remove metal impurities, and ensuring that the metal ions are less than 10PPM.

[0076] S2. Heat and melt the mixture to obtain molten glass. In this step, the mixture powder prepared in S1 is poured into a crucible and placed in a high-temperature furnace under an air atmosphere to be heated to a liquid state. The heating temperature is 1300°C-1500°C and the mixture is kept warm for 24 to 72 hours for homogenization: the chemical composition of the molten glass tends to be uniform under high temperature for a long time to obtain molten glass. In a specific embodiment, the mixture powder prepared in S1 is poured into a crucible and placed in a high-temperature furnace under an air atmosphere to be heated to a liquid state. The heating temperature is 1450°C and the mixture is kept warm for 36 hours. The molten glass is continuously heated and a gaseous mixture is released. After 36 hours of homogenization, the chemical composition of the molten glass tends to be uniform.

[0077] S3, quenching the glass liquid with water to obtain a glass body. In this step, the molten glass body formed in S2 is poured into water and quenched to obtain glass slag.

[0078] S4, crushing the glass body to obtain the glass powder. Crushing and grinding the glass slag formed in S4 to obtain glass powder. The glass powder obtained in this step has a dielectric constant of about 4, an expansion coefficient close to that of silicon, and a loss of less than 0.0001 (@20°C, 1MHz).

[0079] S5, mixing the glass powder, organic binder and water in a certain proportion to obtain glass paste, wherein the content of the glass powder and the organic binder reaches 70%-85%.

[0080] The glass bonding single layer 31 is a glass paste including glass powder, organic adhesive and water. The specific mixing ratio of glass powder and water is adjustable according to the material and thickness of the glass layer to be bonded.

[0081] The glass bonding single layer 31 described in the present application is a glass paste including glass powder, an organic binder and water. The glass powder is prepared by a high-temperature melting-water quenching process. The glass bonding single layer 31 prepared by the glass powder has a low melting point, a low glass transition point, and high uniformity. The raw material price is low, the source is abundant, the synthesis temperature is low, the process is simple, and it is conducive to industrial production.

[0082] The glass bonding single layer 31 provided in the present application has a lower thermal expansion coefficient, higher strength, better chemical stability and thermal stability, and has a high bonding strength with high borosilicate glass and microcrystalline glass. In addition, the glass bonding single layer 31 has good insulation and higher safety.

[0083] In one embodiment, the raw materials of the glass plate single layer 21 include: 77% to 80% by mass of silicon dioxide, 16% to 20% by mass of boron oxide, 1.5% to 2.7% by mass of potassium oxide, 1.3% to 1.6% by mass of aluminum oxide, and 0.05% to 0.5% by mass of rare earth oxide; wherein the sum of the mass fractions of silicon dioxide, boron oxide, potassium oxide and aluminum oxide is 99.5% to 99.9%; the rare earth oxide includes one or more oxides of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium or yttrium.

[0084] The glass sheet single layer 21 is manufactured by the following steps:

[0085] S10, taking 77% to 80% by mass of silicon dioxide, 16% to 20% of boron oxide, 1.5% to 2.7% of potassium oxide, 1.3% to 1.6% of aluminum oxide, and 0.05% to 0.5% of rare earth oxide, and mixing them to form mixed particles. The sum of the mass fractions of silicon dioxide, boron oxide, potassium oxide, and aluminum oxide is 99.5% to 99.9%. The rare earth oxide includes one or more oxides of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium, or yttrium. In a specific embodiment, the sum of the mass fractions of silicon dioxide, boron oxide, potassium oxide and aluminum oxide is 99.7%, the rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide and neodymium oxide, and the mass fraction of the rare earth oxide is 0.3%.

[0086] S20, placing the mixed particles in a crucible for dissolution, wherein the dissolution is carried out at a high temperature of 1450°C to 1600°C for 32 to 48 hours to form a preformed glass. In a specific embodiment, the dissolution is carried out at a high temperature of 1520°C for 40 hours.

[0087] S30, placing the preformed glass into a forming container and performing extremely rapid cooling to form silicate glass.

[0088] In this embodiment, the glass sheet single layer 21 formed by the above method has good performance: the density is 2.15±0.25g·cm -3 , Young's modulus is 70.00GPa, and the thermal expansion coefficient is (3±0.5)×10 in the temperature range of 0-300℃. -6 ℃ -1The logarithmic volume resistivity at 250℃ is 12.3Ω*cm, the logarithmic volume resistivity at 350℃ is 9.9Ω*cm, the dielectric constant at room temperature 20℃ and 1MHz is 3.9±0.1, the loss at room temperature 20℃ and 1MHz is less than 0.0001, and the transmission signal speed is greater than 350GB.

[0089] See also Figure 2 In one embodiment, m is 6, and the six glass plate single layers 21 are, from bottom to top, a first glass plate single layer 21-1, a second glass plate single layer 21-2, a third glass plate single layer 21-3, a fourth glass plate single layer 21-4, a fifth glass plate single layer 21-5, and a sixth glass plate single layer 21-6.

[0090] The seven glass bonding single layers 31 are, from bottom to top, a first glass bonding single layer 31-1, a second glass bonding single layer 31-2, a third glass bonding single layer 31-3, a fourth glass bonding single layer 31-4, a fifth glass bonding single layer 31-5, a sixth glass bonding single layer 31-6, and a seventh glass bonding single layer 31-7.

[0091] The first glass bonding single layer 31-1 is disposed between the bottom layer 11 and the first glass plate single layer 21-1. The second glass bonding single layer 31-2 is disposed between the first glass plate single layer 21-1 and the second glass plate single layer 21-2. The third glass bonding single layer 31-3 is disposed between the second glass plate single layer 21-2 and the third glass plate single layer 21-3. The fourth glass bonding single layer 31-4 is disposed between the third glass plate single layer 21-3 and the fourth glass plate single layer 21-4. The fifth glass bonding single layer 31-5 is disposed between the fourth glass plate single layer 21-4 and the fifth glass plate single layer 21-5. The sixth glass bonding single layer 31-6 is disposed between the fifth glass plate single layer 21-5 and the sixth glass plate single layer 21-6. The seventh glass bonding single layer 31-7 is disposed between the sixth glass plate single layer 21-6 and the top layer 12.

[0092] The thickness of the first glass plate single layer 21-1 is 0.2 mm, the thickness of the second glass plate single layer 21-2 is 0.3 mm, the thickness of the third glass plate single layer 21-3 is 0.3 mm, the thickness of the fourth glass plate single layer 21-4 is 0.2 mm, the thickness of the fifth glass plate single layer 21-5 is 0.2 mm, and the thickness of the sixth glass plate single layer 21-6 is 0.2 mm.

[0093] In this embodiment, a specific structure of a glass substrate 100 including 6 glass plate single layers 21 and 7 glass bonding single layers 31 is illustrated. In this structure, the melting point of the glass bonding single layer 31 is in the range of 300°C to 500°C, the glass bonding single layer 31 is insulating, the softening temperature of the glass bonding single layer 31 is lower than the softening temperature of the glass plate single layer 21, and the glass bonding single layer 31 plays a role in combining the upper and lower layers. Therefore, in this embodiment, the glass substrate 100 has a lower thermal expansion coefficient, higher strength, better chemical stability and thermal stability, each layer has a high bonding force, and the glass substrate 100 has good insulation and higher safety.

[0094] In one embodiment, reference may be made to Figure 1 and Figure 2 The glass substrate 100 includes a plurality of via holes 40 , and the maximum penetration depth of the plurality of via holes 40 is equal to the sum of the thickness of m glass plate single layers 21 and the thickness of m-1 glass bonding single layers 31 .

[0095] In this embodiment, the penetration depths of the plurality of via holes 40 in the same layer are the same, and the penetration depths of different layers are the same or different. The plurality of via holes 40 are used to form a circuit board with a special circuit layout.

[0096] In one embodiment, the diameter of the via hole 40 is 0.03-0.07 mm, and the spacing between any two adjacent via holes 40 is greater than or equal to 0.04 mm. In one embodiment, the diameter of the via hole 40 is 0.05 mm. In one embodiment, the spacing between any two adjacent via holes 40 is 0.05 mm.

[0097] In this embodiment, the diameter and spacing of the via holes 40 provided make the circuit layout formed on the glass substrate 100 more stable.

[0098] See also Figure 3 In one embodiment, the glass substrate 100 further includes a first metal 21a disposed between the glass plate single layer 21 and the glass bonding single layer 31; the first metal 21a is obtained by screen printing. Figure 3 As shown, the first metal 21 a is disposed on both the upper and lower surfaces of the glass plate single layer 21 .

[0099] The first metal 21a may be disposed only on the first surface of each of the glass plate single layers 21. Alternatively, the first metal 21a may also be disposed on the first surface and the second surface of each of the glass plate single layers 21. The first surface and the second surface are two surfaces that are opposite to each other in the stacking direction of the glass substrate 100, and the first surface is closer to the bottom layer 11. The first metal 21a is filled into the through hole 40, and the first metal 21a is selected from metal materials such as copper, silver, gold, and nickel.

[0100] See also Figure 4a In one embodiment shown in FIG. 1 , the bottom layer 11 includes a stacked metal layer 11b, a bottom single-layer glass 11a, and a metal layer 11b. Figure 4b In another embodiment shown in FIG. 1 , the bottom layer 11 includes a stacked metal layer 11b and a bottom single-layer glass 11a. Figure 4c In one embodiment shown, the top layer 12 includes a metal layer 12b, a top layer of single-layer glass 12a, and a metal layer 12b that are stacked.

[0101] In a specific embodiment 1, the glass substrate 100 includes: a bottom layer 11; the bottom layer 11 includes, arranged in order from bottom to top: a metal layer + a bottom single-layer glass + a metal layer + a glass bonding single layer 31 + a first metal 21a + a glass plate single layer 21 + a first metal 21a + a glass bonding single layer 31 + a first metal 21a + a glass plate single layer 21 + a first metal 21a + a glass bonding single layer 31 + a top layer 12; the top layer 12 includes: a metal layer + a top single-layer glass + a metal layer.

[0102] In a specific embodiment 2, the glass substrate 100 includes: a bottom layer 11. The bottom layer 11 includes, arranged from bottom to top, the following: a metal layer + a bottom single-layer glass + a glass bonding single layer 31 + a first metal 21a + a glass plate single layer 21 + a glass bonding single layer 31 + a first metal 21a + a glass plate single layer 21 + a glass bonding single layer 31 + a top layer 12. The top layer 12 includes: a metal layer + a top single-layer glass + a metal layer.

[0103] In the above two specific embodiments, the metal layer can be selected from metal materials such as copper, silver, gold, nickel, etc.

[0104] See also Figure 5-Figure 9 , respectively illustrate the patterned structures after the through holes 40 are provided on the glass plate single layers 21 of different layers. Figures 5 to 9 The glass plate single layers 21 shown in FIG. 1 are stacked to form a glass substrate 100 with m=5.

[0105] The present application provides a method for preparing a glass substrate, which uses the following steps to form the glass substrate 100 described in any of the above embodiments:

[0106] S100 , providing a base layer 11 , and forming a first glass bonding single layer 31 - 1 on the base layer 11 .

[0107] S200, forming a spacer metal layer on the first glass bonding single layer 31-1, and forming a first glass plate single layer 21-1 on the surface of the spacer metal layer.

[0108] S300, performing a multi-step operation on the first glass plate single layer 21-1 to form the first glass plate single layer 21-1 with upper and lower surfaces being conductive.

[0109] Among them, S300 includes:

[0110] S310, laser processing is performed on the first glass plate single layer 21-1 to form a patterned via hole 40. In this step, the patterned via hole 40 may be one or more.

[0111] S320, forming a conductive metal on the upper surface of the first glass plate single layer 21-1 by magnetron sputtering, wherein the thickness of the conductive metal is 1 μm to 10 μm. In this step, the conductive metal may be titanium, nickel, copper, indium oxide, or other conductive metals or oxides.

[0112] S330, filling the conductive holes 40 by electroplating to obtain the first glass plate single layer 21-1 with upper and lower surfaces being conductive and having a minimum line spacing of 0.05 mm and a conductive hole 40 diameter of 0.05 mm.

[0113] S340, forming a second glass bonding single layer 31-2 on the first glass plate single layer 21-1.

[0114] S400, forming a second glass plate single layer 21-2 on the second glass bonding single layer 31-2.

[0115] S500, performing a multi-step operation on the second glass sheet single layer 21-2 to form the second glass sheet single layer 21-2 with upper and lower surfaces being conductive. The step of forming the second glass sheet single layer 21-2 with upper and lower surfaces being conductive is the same as the step of forming the first glass sheet single layer 21-1 with upper and lower surfaces being conductive. For example, S500 includes:

[0116] S510 , laser processing is performed on the second glass plate single layer 21 - 2 to form patterned via holes 40 .

[0117] S520: forming a conductive metal on the upper surface of the second glass plate single layer 21-2 by magnetron sputtering, wherein the thickness of the conductive metal is 1 μm to 10 μm.

[0118] S530, filling the conductive holes 40 by electroplating to obtain the second glass plate single layer 21-2 with the minimum line spacing of 0.05 mm and the conductive holes 40 having a diameter of 0.05 mm and being conductive on the upper and lower surfaces.

[0119] S600, further performing the steps of forming the glass bonding single layer 31 and forming the glass plate single layer 21, until the (m+1)th glass bonding single layer 31 is manufactured.

[0120] S700 , forming a top layer 12 on the upper surface of the (m+1)th glass bonding single layer 31 .

[0121] In this embodiment, a method for preparing a glass substrate 100 is provided, which is different from the prior art in that: first, the special structural setting of the glass substrate 100, that is, the structural setting of the glass plate laminate 20 and the glass bonding laminate 30, makes the overall structure of the glass substrate 100 more stable. Second, the special preparation method and excellent properties of the glass bonding single layer 31, the melting point of the glass bonding single layer 31 is in the range of 300°C to 500°C, the glass bonding single layer 31 is insulating, the softening temperature of the glass bonding single layer 31 is lower than the softening temperature of the glass plate single layer 21, and the glass bonding single layer 31 plays a role in combining the upper and lower layers. Third, the performance difference between the glass bonding single layer 31 and the glass plate single layer 21 makes the glass bonding single layer 31 have a high bonding force with the glass plate single layer 21 or other high borosilicate glass and microcrystalline glass, and the glass substrate 100 as a whole has good insulation and higher safety.

[0122] In one embodiment, the glass sheet single layer 21 is manufactured by the following steps:

[0123] S10, take 77% to 80% of silicon dioxide, 16% to 20% of boron oxide, 1.5% to 2.7% of potassium oxide, 1.3% to 1.6% of aluminum oxide, and 0.05% to 0.5% of rare earth oxide, and mix them to form mixed particles. The sum of the mass fractions of silicon dioxide, boron oxide, potassium oxide, and aluminum oxide is 99.5% to 99.9%. The rare earth oxide includes one or more oxides composed of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium, or yttrium. In a specific embodiment, the sum of the mass fractions of silicon dioxide, boron oxide, potassium oxide, and aluminum oxide is 99.6%, the rare earth oxide is a mixture of cerium oxide, samarium oxide, and praseodymium oxide, and the mass fraction of the rare earth oxide is 0.4%.

[0124] S20, placing the mixed particles in a crucible for dissolution, wherein the dissolution is carried out at a high temperature of 1450°C to 1600°C for 32 to 48 hours to form a preformed glass. In a specific embodiment, the dissolution is carried out at a high temperature of 1560°C for 38 hours.

[0125] S30, placing the preformed glass into a forming container and performing extremely rapid cooling to form silicate glass.

[0126] In this embodiment, the glass sheet single layer 21 formed by the above method has good performance: the density is 2.15±0.25g·cm -3 , Young's modulus is 70.00GPa, and the thermal expansion coefficient is (3±0.5)×10 in the temperature range of 0-300℃. -6 ℃ -1 The logarithmic volume resistivity at 250℃ is 12.3Ω*cm, the logarithmic volume resistivity at 350℃ is 9.9Ω*cm, the dielectric constant at room temperature 20℃ and 1MHz is 3.9±0.1, the loss at room temperature 20℃ and 1MHz is less than 0.0001, and the transmission signal speed is greater than 350GB.

[0127] The present application provides an electronic device, including: a glass substrate 100 described in any of the above embodiments, or a glass substrate 100 prepared by the method for preparing the glass substrate 100 described in any of the above embodiments.

[0128] In one embodiment, the electronic device is an artificial intelligence computing chip, a photonic chip, a high-power solid-state laser chip, a 6G transmission chip, or a high-power radar chip.

[0129] In this embodiment, the glass substrate 100 is used in a semiconductor chip packaging structure to replace the existing PCB circuit board, thereby improving chip integration, increasing the number of chips placed per unit area, and increasing the transmission rate between chips to more than 300G. The glass substrate 100 is used to form electronic devices including artificial intelligence computing chips, photonic chip packaging, high-power solid laser chips, 6G transmission chips, or high-power radar chips.

[0130] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A glass substrate, characterized in that: include: A bottom layer (11), a top layer (12), and a glass plate laminate (20) and a glass bonding laminate (30) disposed between the bottom layer (11) and the top layer (12); The glass plate laminate (20) comprises m glass plate single layers (21), where m is an integer greater than or equal to 2; the m glass plate single layers (21) are all arranged between the bottom layer (11) and the top layer (12); The glass bonding laminate (30) comprises (m+1) glass bonding single layers (31), which are respectively arranged between any two of the glass plate single layers (21), between the bottom layer (11) and the bottommost glass bonding single layer (31), and between the topmost glass bonding single layer (31) and the top layer (12); The melting points of the (m+1) glass bonding single layers (31) are all lower than the melting points of the m glass plate single layers (21); the melting point of the glass bonding single layer (31) is in the range of 300°C to 500°C, the glass bonding single layer (31) is insulating, the softening temperature of the glass bonding single layer (31) is lower than the softening temperature of the glass plate single layer (21), and the glass bonding single layer (31) plays a role in connecting the upper and lower layers; The glass bonding single layer (31) is a glass paste comprising glass powder, an organic binder and water, wherein the content of the glass powder and the organic binder reaches 70%-85%; The raw materials of the glass powder include: 10% to 30% by mass of boron trioxide, 5% to 15% by mass of silicon dioxide, 55% to 70% by mass of zinc oxide, 0% to 25% by mass of vanadium pentoxide, 0% to 2% by mass of antimony trioxide, and 0% to 2% by mass of germanium dioxide; The raw materials of the glass plate single layer (21) include: silicon dioxide with a mass fraction of 77% to 80%, boron oxide with a mass fraction of 16% to 20%, potassium oxide with a mass fraction of 1.5% to 2.7%, aluminum oxide with a mass fraction of 1.3% to 1.6%, and rare earth oxide with a mass fraction of 0.3%; wherein the sum of the mass fractions of silicon dioxide, boron oxide, potassium oxide and aluminum oxide is 99.7%; and the rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide and neodymium oxide.

2. The glass substrate according to claim 1, wherein m is 6, and the six glass plate single layers (21) are, from bottom to top, a first glass plate single layer (21-1), a second glass plate single layer (21-2), a third glass plate single layer (21-3), a fourth glass plate single layer (21-4), a fifth glass plate single layer (21-5), and a sixth glass plate single layer (21-6); The seven glass bonding single layers (31) are, from bottom to top, a first glass bonding single layer (31-1), a second glass bonding single layer (31-2), a third glass bonding single layer (31-3), a fourth glass bonding single layer (31-4), a fifth glass bonding single layer (31-5), a sixth glass bonding single layer (31-6), and a seventh glass bonding single layer (31-7); The first glass bonding single layer (31-1) is arranged between the bottom layer (11) and the first glass plate single layer (21-1); the second glass bonding single layer (31-2) is arranged between the first glass plate single layer (21-1) and the second glass plate single layer (21-2); the third glass bonding single layer (31-3) is arranged between the second glass plate single layer (21-2) and the third glass plate single layer (21-3); the fourth glass bonding single layer (31-4) is arranged between the third glass plate single layer (21-2) and the third glass plate single layer (21-3); The first glass sheet (21-3) is provided between the first glass sheet (21-4) and the fourth glass sheet (21-4); the fifth glass bonding layer (31-5) is provided between the fourth glass sheet (21-4) and the fifth glass sheet (21-5); the sixth glass bonding layer (31-6) is provided between the fifth glass sheet (21-5) and the sixth glass sheet (21-6); the seventh glass bonding layer (31-7) is provided between the sixth glass sheet (21-6) and the top layer (12); The thickness of the first glass plate single layer (21-1) is 0.2 mm, the thickness of the second glass plate single layer (21-2) is 0.3 mm, the thickness of the third glass plate single layer (21-3) is 0.3 mm, the thickness of the fourth glass plate single layer (21-4) is 0.2 mm, the thickness of the fifth glass plate single layer (21-5) is 0.2 mm, and the thickness of the sixth glass plate single layer (21-6) is 0.2 mm.

3. The glass substrate according to claim 2, wherein: The glass substrate (100) comprises a plurality of via holes (40), wherein the maximum penetration depth of the plurality of via holes (40) is equal to the sum of the thickness of m glass plate single layers (21) and the thickness of (m-1) glass bonding single layers (31).

4. The glass substrate according to claim 3, wherein: The diameter of the conducting hole (40) is 0.03-0.07 mm, and the distance between any two adjacent conducting holes (40) is greater than or equal to 0.04 mm.

5. The glass substrate according to claim 4, wherein: It also includes a first metal (21a) disposed between the glass plate single layer (21) and the glass bonding single layer (31); the first metal (21a) is obtained by screen printing; The first metal (21a) is arranged on the first surface of each of the single layers of the glass plate (21), or the first metal (21a) is arranged on the first surface and the second surface of each of the single layers of the glass plate (21), the first surface and the second surface are two surfaces that are opposite to each other in the stacking direction of the glass substrate (100), the first surface is closer to the bottom layer (11), and the first metal (21a) is filled into the conductive hole (40).

6. A method for preparing a glass substrate, characterized in that: The glass substrate (100) according to any one of claims 1 to 5 is formed by the following steps: S100, providing a bottom layer (11), and forming a first glass bonding single layer (31-1) on the bottom layer (11); S200, forming a spacer metal layer on the first glass bonding single layer (31-1), and forming a first glass plate single layer (21-1) on the surface of the spacer metal layer; S300, performing a multi-step operation on the first glass plate single layer (21-1) to form the first glass plate single layer (21-1) with upper and lower surfaces being conductive; Among them, S300 includes: S310, performing laser processing on the first glass plate single layer (21-1) to form patterned via holes (40); S320, forming a conductive metal on the upper surface of the first glass plate single layer (21-1) by magnetron sputtering, wherein the thickness of the conductive metal is 1 μm to 10 μm; S330, filling the conductive holes (40) with electroplating to obtain the first glass plate single layer (21-1) with a minimum line spacing of 0.05 mm and a diameter of 0.05 mm, with the conductive holes (40) being conductive on the upper and lower surfaces; S340, forming a second glass bonding single layer (31-2) on the first glass plate single layer (21-1); S400, forming a second glass plate single layer (21-2) on the second glass bonding single layer (31-2); S500, performing a multi-step operation on the second glass sheet single layer (21-2) to form the second glass sheet single layer (21-2) with upper and lower surfaces being conductive; the step of forming the second glass sheet single layer (21-2) with upper and lower surfaces being conductive is the same as the step of forming the first glass sheet single layer (21-1) with upper and lower surfaces being conductive; S600, further performing the steps of forming the glass bonding single layer (31) and forming the glass plate single layer (21), until the (m+1)th glass bonding single layer (31) is manufactured; S700, forming a top layer (12) on the upper surface of the (m+1)th glass bonding single layer (31); Wherein, the (m+1) glass bonding single layers (31) are all glass pastes including glass powder and organic adhesive, and the content of the glass powder and the organic adhesive reaches 70%-85%; The glass powder is prepared by the following steps: S1, taking 10% to 30% of boron trioxide, 5% to 15% of silicon dioxide, 55% to 70% of zinc oxide, 0% to 25% of vanadium pentoxide, 0% to 2% of antimony trioxide, and 0% to 2% of germanium dioxide in mass fraction, and mixing them to obtain a mixture; S2, heating and melting the mixed material to obtain molten glass; S3, quenching the glass liquid with water to obtain a glass body; S4, crushing the glass body to obtain the glass powder; The glass sheet single layer (21) is manufactured by the following steps: S10, taking 77% to 80% by mass of silicon dioxide, 16% to 20% of boron oxide, 1.5% to 2.7% of potassium oxide, 1.3% to 1.6% of aluminum oxide, and 0.3% of rare earth oxide, and mixing them to form mixed particles; wherein the sum of the mass fractions of silicon dioxide, boron oxide, potassium oxide, and aluminum oxide is 99.7%; and the rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide, and neodymium oxide; S20, placing the mixed particles into a crucible for dissolution, wherein the dissolution is carried out at a high temperature of 1450° C. to 1600° C., and the mixture is melted and homogenized for 32 hours to 48 hours to form a preformed glass; S30, placing the preformed glass into a forming container and rapidly cooling it to form silicate glass.

7. An electronic device, characterized in that: include: A glass substrate prepared by using the glass substrate according to any one of claims 1 to 5, or by using the method for preparing a glass substrate according to claim 6.

8. The electronic device according to claim 7, characterized in that The electronic device is an artificial intelligence computing chip, a photonic chip, a high-power solid-state laser chip, a 6G transmission chip, or a high-power radar chip.

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