Voltage detection method and device, computer equipment and storage medium

Abstract

The invention relates to a voltage detection method and device, computer equipment and a storage medium. The method comprises the following steps: determining a predicted voltage of a to-be-detected conductor according to a first electric field intensity obtained by detecting the to-be-detected conductor by at least one basic electric field sensor; according to the predicted voltage, opening and closing control is carried out on at least one basic electric field sensor and at least one bias electric field sensor, and the target electric field intensity detected by the electric field sensor in the opening state is obtained; and determining a target voltage value of the to-be-measured conductor according to the target electric field intensity. By adopting the method, the accuracy of voltage detection can be improved.

Description

Technical Field

[0001] The present application relates to the field of computer technology, and in particular to a voltage detection method, device, computer equipment and storage medium. Background Art

[0002] As an essential input variable for the power system to achieve optimized operation, control, protection and other functions, conductor potential is one of the common items that requires large-scale testing.

[0003] In traditional technology, electric field sensors are usually used to detect the voltage value of the conductor potential. The basic principle of measurement of the ring array electric field sensor chip is based on Gauss's theorem. It uses multiple electric field sensor chips surrounding the current-carrying conductor to measure the electric field, and inverts the voltage of the conductor based on the measured value and the position of the electric field sensor chip.

[0004] Although this method can detect the voltage value of the conductor potential, it has the problem of inaccurate detection. Summary of the invention

[0005] Based on this, it is necessary to provide a voltage detection method, device, computer equipment and storage medium that can accurately detect voltage in response to the above technical problems.

[0006] In a first aspect, the present application provides a voltage detection method, which is applied to a voltage detection device, wherein at least two electric field sensors are provided in the voltage detection device; the at least two electric field sensors include at least one basic electric field sensor and at least one bias electric field sensor; the method includes:

[0007] Determine a predicted voltage of the conductor to be measured according to a first electric field strength detected by at least one basic electric field sensor on the conductor to be measured;

[0008] According to the predicted voltage, at least one basic electric field sensor and at least one bias electric field sensor are controlled to be on and off, and a target electric field strength detected by the electric field sensor in the on state is obtained;

[0009] According to the target electric field strength, the target voltage value of the conductor to be tested is determined.

[0010] In one embodiment, determining a target voltage of a conductor to be measured according to a target electric field strength includes:

[0011] Obtaining conductor parameters of the conductor to be tested;

[0012] Obtaining the offset distance between the conductor to be measured and the center of gravity of the voltage detection device, and the straight-line distance between any electric field sensor and the center of gravity of the voltage detection device;

[0013] Determine the target voltage of the conductor to be tested based on the target electric field strength, conductor parameters, offset distance and straight-line distance.

[0014] In one embodiment, obtaining conductor parameters of a conductor to be measured includes:

[0015] Obtaining the initial distance between the conductor to be measured and the preset zero potential point;

[0016] Obtain the conductor radius of the conductor to be measured;

[0017] The conductor parameters of the conductor to be measured are determined according to the conductor radius and the initial distance.

[0018] In one of the embodiments, the electric field strength detection directions of the basic electric field sensor and the bias electric field sensor are different; the electric field strength detection direction of the basic electric field sensor is parallel to the direction pointing to the center of gravity of the voltage detection device at its own position; the electric field strength detection direction of the bias electric field sensor is, based on the direction pointing to the center of gravity of the voltage detection device at its own position, the direction offset by a preset angle clockwise along the installation plane of at least one bias electric field sensor.

[0019] In one embodiment, the at least one basic electric field sensor and the at least one bias electric field sensor are controlled to be on and off according to the predicted voltage, including:

[0020] Determine the range adjustment strategy corresponding to the voltage interval to which the predicted voltage belongs;

[0021] According to the range adjustment strategy, at least one basic electric field sensor and at least one bias electric field sensor are controlled to be on and off.

[0022] In one of the embodiments, the voltage interval includes a basic voltage interval and a bias voltage interval, and the maximum value of the basic voltage interval is less than the minimum value of the bias voltage interval; determining the range adjustment strategy corresponding to the voltage interval to which the predicted voltage belongs includes:

[0023] If the predicted voltage value belongs to the basic voltage interval, the range adjustment strategy is determined to be a conventional range adjustment strategy; the conventional range adjustment strategy is to only turn on the basic electric field sensor;

[0024] If the predicted voltage value belongs to the bias voltage interval, the range adjustment strategy is determined to be the bias range adjustment strategy; the bias range adjustment strategy is to only turn on the bias electric field sensor.

[0025] In a second aspect, the present application also provides a voltage detection device, comprising:

[0026] A voltage prediction module, used to determine a predicted voltage of the conductor to be measured according to a first electric field strength detected by at least one basic electric field sensor on the conductor to be measured;

[0027] A target detection module, used to control the on / off of at least one basic electric field sensor and at least one bias electric field sensor according to the predicted voltage, and obtain the target electric field strength detected by the electric field sensor in the on state;

[0028] The target determination module is used to determine the target voltage value of the conductor to be measured according to the target electric field strength.

[0029] In a third aspect, the present application further provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the following steps are implemented:

[0030] Determine a predicted voltage of the conductor to be measured according to a first electric field strength detected by at least one basic electric field sensor on the conductor to be measured;

[0031] According to the predicted voltage, at least one basic electric field sensor and at least one bias electric field sensor are controlled to be on and off, and a target electric field strength detected by the electric field sensor in the on state is obtained;

[0032] According to the target electric field strength, the target voltage value of the conductor to be tested is determined.

[0033] In a fourth aspect, the present application further provides a computer-readable storage medium having a computer program stored thereon, wherein when the computer program is executed by a processor, the following steps are implemented:

[0034] Determine a predicted voltage of the conductor to be measured according to a first electric field strength detected by at least one basic electric field sensor on the conductor to be measured;

[0035] According to the predicted voltage, at least one basic electric field sensor and at least one bias electric field sensor are controlled to be on and off, and a target electric field strength detected by the electric field sensor in the on state is obtained;

[0036] According to the target electric field strength, the target voltage value of the conductor to be tested is determined.

[0037] In a fifth aspect, the present application further provides a computer program product, including a computer program, which implements the following steps when executed by a processor:

[0038] Determine a predicted voltage of the conductor to be measured according to a first electric field strength detected by at least one basic electric field sensor on the conductor to be measured;

[0039] According to the predicted voltage, at least one basic electric field sensor and at least one bias electric field sensor are controlled to be on and off, and a target electric field strength detected by the electric field sensor in the on state is obtained;

[0040] According to the target electric field strength, the target voltage value of the conductor to be tested is determined.

[0041] The voltage detection method, device, computer equipment and storage medium described above determine the predicted voltage of the conductor to be measured based on the first electric field strength detected by at least one basic electric field sensor on the conductor to be measured; based on the predicted voltage, at least one basic electric field sensor and at least one bias electric field sensor are controlled to open and close, and the target electric field strength detected by the electric field sensor in the open state is obtained; based on the target electric field strength, the target voltage value of the conductor to be measured is determined. This embodiment detects the predicted voltage of the conductor to be measured through the basic electric field sensor and the bias electric field sensor, and then controls the opening and closing of the basic electric field sensor and the bias electric field sensor, and detects the target voltage value according to the adjusted voltage detection device, thereby improving the accuracy of voltage detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related technologies, the drawings required for use in the embodiments or the related technical descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0043] FIG1 is a diagram showing an application environment of a voltage detection method provided by this embodiment;

[0044] FIG2 is a schematic diagram of a flow chart of a first voltage detection method provided in this embodiment;

[0045] FIG3 is a basic principle diagram of Gauss's theorem provided by this embodiment;

[0046] FIG4 is a structural block diagram of a voltage detection device provided in this embodiment;

[0047] FIG5 is an internal structure diagram of a first computer device provided in this embodiment;

[0048] FIG6 is a diagram showing the internal structure of a second type of computer device provided in this embodiment. DETAILED DESCRIPTION

[0049] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0050] The voltage detection method provided in the embodiment of the present application can be applied in the application environment as shown in Figure 1. Among them, at least two electric field sensors are arranged in the voltage detection device; the at least two electric field sensors include at least one basic electric field sensor and at least one bias electric field sensor. The voltage detection device determines the predicted voltage of the conductor to be measured based on the first electric field strength detected by at least one basic electric field sensor on the conductor to be measured; according to the predicted voltage, at least one basic electric field sensor and at least one bias electric field sensor are controlled to open and close, and the target electric field strength detected by the electric field sensor in the open state is obtained; according to the target electric field strength, the target voltage value of the conductor to be measured is determined. Among them, the basic electric field sensor and the bias electric field sensor have different electric field strength detection directions, and the basic electric field sensor and the bias electric field sensor can be distributed in the six corners of the hexagon; the basic electric field sensor in the figure includes a basic electric field sensor T1, a basic electric field sensor T2 and a basic electric field sensor T3; the bias sensor includes a bias electric field sensor T4, a bias electric field sensor T5 and a bias electric field sensor T6; the offset preset angle β corresponding to the bias electric field sensor T4 1 The offset preset angle β corresponding to the bias electric field sensor T5 is 30°; 2 The offset preset angle β corresponding to the bias electric field sensor T6 is 60°; 3 is 90°; point O represents the center of gravity of the voltage detection device; point S represents the location of the conductor to be measured; E1 represents the electric field strength of the basic electric field sensor T1; E2 represents the electric field strength of the basic electric field sensor T2; E3 represents the electric field strength of the basic electric field sensor T3; E4 represents the electric field strength of the biased electric field sensor T4; E5 represents the electric field strength of the biased electric field sensor T5; E6 represents the electric field strength of the biased electric field sensor T6; R represents the straight-line distance between any electric field sensor and the center of gravity of the voltage detection device; r1 represents the electric field strength of the basic electric field sensor r1 represents the straight-line distance between the basic electric field sensor T2 and the conductor to be measured; r2 represents the straight-line distance between the basic electric field sensor T2 and the conductor to be measured; r3 represents the straight-line distance between the basic electric field sensor T3 and the conductor to be measured; r4 represents the straight-line distance between the biased electric field sensor T4 and the center of gravity of the voltage detection device; r5 represents the straight-line distance between the biased electric field sensor T5 and the center of gravity of the voltage detection device; r6 represents the straight-line distance between the biased electric field sensor T6 and the center of gravity of the voltage detection device; x represents the offset distance between the conductor to be measured and the center of gravity of the voltage detection device.

[0051] In an exemplary embodiment, as shown in FIG2 , a voltage detection method is provided, which is described by taking the method applied to the voltage detection device in FIG1 as an example, and includes the following steps 201 to 203. Among them:

[0052] Step 201 : determining a predicted voltage of a conductor to be measured according to a first electric field strength detected by at least one basic electric field sensor on the conductor to be measured.

[0053] The electric field sensor may be composed of a ring array electric field sensor chip, the basic principle of the electric field sensor measurement is based on Gauss's theorem, and the electric field sensor may be based on a tunnel magnetoresistance (TMR) sensor chip. The electric field sensor may include a basic electric field sensor and a bias electric field sensor.

[0054] Among them, the basic electric field sensor can include three basic electric field sensors, and the three basic electric field sensors are distributed in an isosceles triangle. The electric field strength detection direction of each basic electric field sensor is parallel to the direction of the center of gravity of the voltage detection device pointing to its own position, that is, parallel to the direction of the line vector connecting the basic electric field sensor and the center of gravity of the isosceles triangle.

[0055] Among them, the bias sensor can include three bias sensors, the electric field strength detection directions of the basic electric field sensor and the bias electric field sensor are different, and the electric field strength detection direction of the bias electric field sensor is, based on the direction of the center of gravity of the voltage detection device pointing to its own position, and is offset clockwise by a preset angle along the installation plane of at least one bias electric field sensor.

[0056] Specifically, the voltage detection device controls each basic electric field sensor to obtain the first electric field strength of the conductor to be measured, and determines the offset distance x of the conductor to be measured according to the first electric field strength, conductor parameters, a preset initial point, a preset threshold and a preset number of iterations; and determines the predicted voltage of the conductor to be measured according to the first electric field strength, the straight-line distance R and the offset distance x.

[0057] Illustratively, in this embodiment, the electric field strengths E1, E2, and E3 can be input into a preset distance parameter determination model to obtain the offset distance x of the conductor to be measured, and then the predicted voltage of the conductor to be measured is determined by the following formula (1-1).

[0058] (1-1)

[0059] Among them, E 1 is the first electric field strength of the basic electric field sensor T1; R is the straight-line distance between the basic electric field sensor T1 and the center of gravity of the voltage detection device; x is the offset distance between the conductor to be tested and the center of gravity of the voltage detection device; M is the conductor parameter; U 0 is the predicted voltage; θ 1 The angle between the line connecting the basic electric field sensor and the center of gravity of the voltage detection device, and the angle between the line connecting the conductor to be measured and the center of gravity of the voltage detection device.

[0060] Exemplarily, the distance parameter determination model can be constructed based on Newton's method, where y=(x, cosθ 1 ), F=[f 1 , f 2 ] T , preset initial point y(0)=(x(0),cosθ 1 (0))=(0,1), threshold Δ=1e-4. And the number of iterations is 10, as shown in the following formulas (1-2) to (1-4).

[0061] (1-2)

[0062] (1-3)

[0063] (1-4)

[0064] Where n is the number of iterations; E 1 is the first electric field strength of the basic electric field sensor T1; E 2 is the first electric field strength of the basic electric field sensor T2; E 3 is the first electric field strength of the basic electric field sensor T3; R is the straight-line distance between the basic electric field sensor T1 and the center of gravity of the voltage detection device; x is the offset distance between the conductor to be tested and the center of gravity of the voltage detection device; M is the conductor parameter; U 0 is the predicted voltage; θ 1 The angle between the line connecting the basic electric field sensor and the center of gravity of the voltage detection device, and the angle between the line connecting the conductor to be measured and the center of gravity of the voltage detection device.

[0065] It should be noted that, in this embodiment, the linear distance R, the offset distance x and the angle θ between the center of gravity of the conductor to be measured and the voltage detection device can also be determined. 1 , the straight-line distance r between the basic electric field sensor T1 and the conductor to be measured is determined by the following formulas (1-5) to (1-10): 1 , the straight-line distance r between the basic electric field sensor T2 and the conductor to be measured 2 , the straight-line distance r between the basic electric field sensor T3 and the conductor to be measured 3 , angle α 1 , angle α 2 and angle α 3 In this embodiment, the angle θ 1 , determine the angle θ 2 and the angle θ 3 ,θ 1 +θ 2 =120°, θ 3 +θ1 =120°.

[0066] (1-5)

[0067] (1-6)

[0068] (1-7)

[0069] (1-8)

[0070] (1-9)

[0071] (1-10)

[0072] Where R is the straight-line distance between any basic electric field sensor and the center of gravity of the voltage detection device; x is the offset distance between the conductor to be measured and the center of gravity of the voltage detection device; the angle α 1 is the straight-line distance r 1 The angle between the basic electric field sensor T1 and the center of gravity O; angle α 2 is the straight-line distance r 2 The angle between the basic electric field sensor T2 and the center of gravity O; Angle α 3 is the straight-line distance r 3 The angle between the basic electric field sensor T3 and the center of gravity O; θ 1 θ is the angle between the line connecting the basic electric field sensor T1 and the center of gravity O and the line connecting the offset distance x; 2 θ is the angle between the line connecting the basic electric field sensor T2 and the center of gravity O and the line connecting the offset distance x; 3 is the angle between the line connecting the basic electric field sensor T3 and the center of gravity O and the line connecting the offset distance x.

[0073] Step 202: According to the predicted voltage, at least one basic electric field sensor and at least one bias electric field sensor are controlled to be on and off, and a target electric field strength detected by the electric field sensor in the on state is obtained.

[0074] Specifically, according to the predicted voltage, at least one basic electric field sensor and at least one bias electric field sensor are controlled to be turned on and off, an electric field sensor in an on state is determined, and a target electric field strength detected by the electric field sensor is obtained.

[0075] In some embodiments, at least one basic electric field sensor and at least one bias electric field sensor are controlled to open and close according to the predicted voltage, including: determining a range adjustment strategy corresponding to the voltage interval to which the predicted voltage belongs; and according to the range adjustment strategy, controlling the opening and closing of at least one basic electric field sensor and at least one bias electric field sensor.

[0076] Specifically, determine the voltage interval to which the predicted voltage belongs, determine the range adjustment strategy corresponding to the voltage interval, determine the basic electric field sensor or bias electric field sensor to be turned on according to the range adjustment strategy, and perform opening and closing control on at least one basic electric field sensor and at least one bias electric field sensor.

[0077] Step 203: Determine the target voltage value of the conductor to be measured according to the target electric field strength.

[0078] Specifically, according to the target electric field strength, the target electric field strength is input into a pre-trained voltage determination model to obtain a target voltage value of the conductor to be measured.

[0079] The above-mentioned voltage detection method, device, computer equipment and storage medium determine the predicted voltage of the conductor to be measured according to the first electric field strength detected by at least one basic electric field sensor on the conductor to be measured; according to the predicted voltage, at least one basic electric field sensor and at least one bias electric field sensor are opened and closed to control, and the target electric field strength detected by the electric field sensor in the open state is obtained; according to the target electric field strength, the target voltage value of the conductor to be measured is determined. This embodiment detects the predicted voltage of the conductor to be measured by the basic electric field sensor and the bias electric field sensor, and then performs opening and closing control on the basic electric field sensor and the bias electric field sensor, and detects the target voltage value according to the adjusted voltage detection device, thereby improving the accuracy of voltage detection. At the same time, the voltage detection device does not need to connect the two potentials of the line, and there is no insulation problem; the conductor voltage is inverted according to the measured value, and there is no requirement for the installation position. And the predicted voltage can be parsed according to the micro-intelligent system in the voltage detection device, and a judgment is made according to the predicted voltage and the corresponding sensor is automatically switched to work, and the most suitable mode is intelligently selected to balance the needs of high precision and wide range.

[0080] In some embodiments, the target voltage of the conductor to be measured is determined according to the target electric field strength, including: obtaining the conductor parameters of the conductor to be measured; obtaining the offset distance between the conductor to be measured and the center of gravity of the voltage detection device, and the straight-line distance between any electric field sensor and the center of gravity of the voltage detection device; determining the target voltage of the conductor to be measured according to the target electric field strength, conductor parameters, offset distance and straight-line distance.

[0081] Specifically, the predetermined offset distance between the conductor to be measured and the center of gravity of the voltage detection device and the straight-line distance between any electric field sensor and the center of gravity of the voltage detection device are obtained, and the target voltage of the conductor to be measured is determined according to the target electric field strength, conductor parameters, offset distance and straight-line distance.

[0082] Exemplarily, if the target electric field strength is determined by the basic electric field sensor, the target voltage of the conductor to be measured is determined by the above formula (1-1). If the target electric field strength is determined by the biased electric field sensor, the target voltage of the conductor to be measured is determined by the following formula (1-11).

[0083] (1-11)

[0084] Among them, U 0 is the target voltage; M is the conductor parameter; E 4 is the first electric field strength of the basic electric field sensor T4; E 5 is the first electric field strength of the basic electric field sensor T5; E 6 is the first electric field strength of the basic electric field sensor T6; the angle α 4 is the straight-line distance r 4 The angle between the basic electric field sensor T4 and the center of gravity O; Angle α 5 is the straight-line distance r 5 The angle between the basic electric field sensor T5 and the center of gravity O; Angle α 6 is the straight-line distance r 6 The angle between the basic electric field sensor T6 and the center of gravity O; β 1 is the preset offset angle (β 1 =30°); β 2 is the preset offset angle (β 2 =60°); β 3 is the preset offset angle (β 3 =90°).

[0085] In some embodiments, obtaining conductor parameters of the conductor to be measured includes: obtaining an initial distance between the conductor to be measured and a preset zero potential point; obtaining a conductor radius of the conductor to be measured; and determining the conductor parameters of the conductor to be measured based on the conductor radius and the initial distance.

[0086] Specifically, the initial distance between the conductor to be measured and the preset zero potential point is obtained, the conductor radius of the conductor to be measured is obtained, and the conductor parameters of the conductor to be measured are determined according to the conductor radius and the initial distance through the following formula (1-12).

[0087] (1-12)

[0088] Where M is the conductor parameter; r is the conductor radius of the conductor to be measured; x 0 For example, as shown in FIG3 , the basic principle diagram of Gauss's theorem, 0V is the preset zero potential point, x 0 is the initial distance, U is the voltage of the conductor to be measured, r is the conductor radius of the conductor to be measured, and x is the distance between the conductor to be measured and the electric field sensor.

[0089] It should be noted that, in this embodiment, the linear distance R, the offset distance x between the conductor to be measured and the center of gravity of the voltage detection device, and the angle θ can also be determined. 1 and the angle θ 2 , the straight-line distance r between the basic electric field sensor T4 and the conductor to be measured is determined by the following formulas (1-13) to (1-18): 4 , the straight-line distance r between the basic electric field sensor T5 and the conductor to be measured 5 , the straight-line distance r between the basic electric field sensor T6 and the conductor to be measured 6 , angle α 4 , angle α 5 and angle α 6 In this embodiment, the angle θ 1 and the angle θ 2 , determine the angle θ 4 , angle θ 5 and the angle θ 6 ,θ 4 =θ 1 +60°, θ 5 =θ 2 +60°, θ 6 =θ 2 -60°.

[0090] (1-13)

[0091] (1-14)

[0092] (1-15)

[0093] (1-16)

[0094] (1-17)

[0095] (1-18)

[0096] Where R is the straight-line distance between any basic electric field sensor and the center of gravity of the voltage detection device; x is the offset distance between the conductor to be measured and the center of gravity of the voltage detection device; the angle α 4 is the straight-line distance r 4 The angle between the basic electric field sensor T4 and the center of gravity O; Angle α 5 is the straight-line distance r 5 The angle between the basic electric field sensor T5 and the center of gravity O; Angle α 6 is the straight-line distance r 6 The angle between the basic electric field sensor T6 and the center of gravity O; θ 1 θ is the angle between the line connecting the basic electric field sensor T1 and the center of gravity O and the line connecting the offset distance x; 2 is the angle between the line connecting the basic electric field sensor T2 and the center of gravity O and the line connecting the offset distance x.

[0097] This embodiment obtains the conductor parameters of the conductor to be measured; obtains the offset distance between the conductor to be measured and the center of gravity of the voltage detection device, and the straight-line distance between any electric field sensor and the center of gravity of the voltage detection device; based on the target electric field strength, conductor parameters, offset distance and straight-line distance, the target voltage of the conductor to be measured can be determined more accurately.

[0098] In some embodiments, the voltage interval includes a basic voltage interval and a bias voltage interval, and the maximum value of the basic voltage interval is less than the minimum value of the bias voltage interval; determining the range adjustment strategy corresponding to the voltage interval to which the predicted voltage belongs, including: if the predicted voltage value belongs to the basic voltage interval, then determining the range adjustment strategy as a conventional range adjustment strategy; the conventional range adjustment strategy is to only turn on the basic electric field sensor; if the predicted voltage value belongs to the bias voltage interval, then determining the range adjustment strategy as a bias range adjustment strategy; the bias range adjustment strategy is to only turn on the bias electric field sensor.

[0099] Exemplarily, when the target voltage U ≤ U1 (5 kV), the system operates in the normal mode at this time, and only the basic electric field sensors (T1, T2, T3) perform measurements; at this time, the voltage detection device has the highest measurement accuracy and sensitivity, and is suitable for accurate measurement in a small voltage range; its measurement range can be 1 V to 5 kV. When U1 (5 kV) < U ≤ U2 (11 kV), the system stops the basic electric field sensors (T1, T2, and T3) from working and switches the bias sensor T4 to work; at this time, the voltage detection device expands the voltage measurement range; its measurement range can be 1 V to 11 kV. When U2 (11 kV) < U ≤ U3 (22 kV), the system stops the bias sensor T4 from working and switches the bias sensor T5 to work; at this time, the voltage detection device further increases the measurement range and is suitable for measuring larger voltages; its measurement range can be 1 V to 22 kV. When (22 kV) < U ≤ U4 (50 kV), the system stops the bias sensor T5 from working and switches the bias sensor T6 to work; at this time, the voltage detection device reaches the maximum measurement range; its measurement range can be 1 V to 50 kV. When U > U4, the voltage detection device measurement reaches saturation.

[0100] In the process of mode switching in this embodiment, it is necessary to take smooth transition measures, which can avoid sudden jumps in measurement results and ensure the continuity and stability of measurement.

[0101] It should be understood that although the steps in the flowcharts involved in the above-described embodiments are sequentially shown according to the indication of the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless there is a clear description in this article, the execution of these steps has no strict order limit, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-described embodiments may include multiple steps or multiple stages. These steps or stages are not necessarily executed at the same moment, but can be executed at different moments. The execution order of these steps or stages is not necessarily sequential, but can be executed alternately or alternately with at least a part of other steps or steps in other steps.

[0102] Based on the same inventive concept, the embodiments of the present application also provide a voltage detection device for implementing the voltage detection method described above. The solution provided by this device to solve the problem is similar to the solution described in the above method. Therefore, the specific limitations in one or more embodiments of the voltage detection device provided below can refer to the limitations on the voltage detection method in the above text, and will not be repeated here.

[0103] In an exemplary embodiment, as shown in Figure 4, a voltage detection device is provided, including: a voltage prediction module 10, a target detection module 11, and a target determination module 12, where:

[0104] A voltage prediction module 10, configured to determine a predicted voltage of the conductor to be measured according to a first electric field strength detected by at least one basic electric field sensor on the conductor to be measured;

[0105] The target detection module 11 is used to control the on / off of at least one basic electric field sensor and at least one bias electric field sensor according to the predicted voltage, and obtain the target electric field strength detected by the electric field sensor in the on state;

[0106] The target determination module 12 is used to determine the target voltage value of the conductor to be measured according to the target electric field strength.

[0107] In one embodiment, the target determination module 12 in Figure 4 is also used to obtain the conductor parameters of the conductor to be measured; obtain the offset distance between the conductor to be measured and the center of gravity of the voltage detection device, and the straight-line distance between any electric field sensor and the center of gravity of the voltage detection device; determine the target voltage of the conductor to be measured based on the target electric field strength, conductor parameters, offset distance and straight-line distance.

[0108] In one embodiment, the target determination module 12 in FIG. 4 is further used to obtain an initial distance between the conductor to be measured and a preset zero potential point; obtain a conductor radius of the conductor to be measured; and determine conductor parameters of the conductor to be measured based on the conductor radius and the initial distance.

[0109] In one embodiment, in the voltage detection device in Figure 4, the electric field strength detection directions of the basic electric field sensor and the bias electric field sensor are different; the electric field strength detection direction of the basic electric field sensor is parallel to the direction pointing to the center of gravity of the voltage detection device at its own position; the electric field strength detection direction of the bias electric field sensor is, based on the direction pointing to the center of gravity of the voltage detection device at its own position, the direction offset by a preset angle clockwise along the installation plane of at least one bias electric field sensor.

[0110] In one embodiment, the target detection module 11 in FIG. 4 is also used to determine a range adjustment strategy corresponding to the voltage interval to which the predicted voltage belongs; and according to the range adjustment strategy, at least one basic electric field sensor and at least one bias electric field sensor are controlled to be on and off.

[0111] In one embodiment, the target detection module 11 in Figure 4 is also used to determine that the range adjustment strategy is a conventional range adjustment strategy if the predicted voltage value belongs to the basic voltage interval; the conventional range adjustment strategy is to only turn on the basic electric field sensor; if the predicted voltage value belongs to the bias voltage interval, then the range adjustment strategy is determined to be a bias range adjustment strategy; the bias range adjustment strategy is to only turn on the bias electric field sensor.

[0112] Each module in the above voltage detection device can be implemented in whole or in part by software, hardware, or a combination thereof. Each module can be embedded in or independent of a processor in a computer device in the form of hardware, or can be stored in a memory in a computer device in the form of software, so that the processor can call and execute operations corresponding to each module.

[0113] In an exemplary embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be shown in FIG5. The computer device includes a processor, a memory, an input / output interface (Input / Output, referred to as I / O) and a communication interface. The processor, the memory and the input / output interface are connected via a system bus, and the communication interface is connected to the system bus via the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the computer device is used to store data. The input / output interface of the computer device is used to exchange information between the processor and an external device. The communication interface of the computer device is used to communicate with an external terminal through a network connection. When the computer program is executed by the processor, a voltage detection method is implemented.

[0114] In an exemplary embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be shown in FIG6. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit, and an input device. The processor, the memory, and the input / output interface are connected via a system bus, and the communication interface, the display unit, and the input device are connected to the system bus via the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and an external device. The communication interface of the computer device is used to communicate with an external terminal in a wired or wireless manner, and the wireless manner may be implemented through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. When the computer program is executed by the processor, a voltage detection method is implemented. The display unit of the computer device is used to form a visually visible picture, which may be a display screen, a projection device, or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer covering the display screen, or a button, trackball or touchpad set on the computer device shell, or an external keyboard, touchpad or mouse.

[0115] Those skilled in the art will understand that the structures shown in FIGS. 5 and 6 are merely block diagrams of partial structures related to the scheme of the present application, and do not constitute a limitation on the computer device to which the scheme of the present application is applied. The specific computer device may include more or fewer components than those shown in the figures, or combine certain components, or have a different arrangement of components.

[0116] In one embodiment, a computer device is further provided, including a memory and a processor, wherein a computer program is stored in the memory, and the processor implements the steps in the above method embodiments when executing the computer program.

[0117] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps in the above-mentioned method embodiments are implemented.

[0118] In one embodiment, a computer program product is provided, including a computer program, which implements the steps in the above method embodiments when executed by a processor.

[0119] It should be noted that the data involved in this application (including but not limited to data used for analysis, stored data, displayed data, etc.) are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of relevant data must comply with relevant regulations.

[0120] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but are not limited to this.

[0121] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0122] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A voltage detection method, It is characterized in that Applicable to a voltage detection device, wherein at least two electric field sensors are provided in the voltage detection device; The at least two electric field sensors include at least one base electric field sensor and at least one bias electric field sensor; the method includes: Determine a predicted voltage of the conductor to be measured according to a first electric field strength detected by at least one basic electric field sensor on the conductor to be measured; According to the predicted voltage, the at least one basic electric field sensor and the at least one bias electric field sensor are controlled to be on and off, and a target electric field strength detected by the electric field sensor in the on state is obtained; A target voltage value of the conductor to be measured is determined according to the target electric field strength.

2. The method according to claim 1, It is characterized in that Determining the target voltage of the conductor to be measured according to the target electric field strength includes: Obtaining conductor parameters of the conductor to be measured; Obtaining an offset distance between the conductor to be measured and the center of gravity of the voltage detection device, and a straight-line distance between any of the electric field sensors and the center of gravity of the voltage detection device; The target voltage of the conductor to be measured is determined according to the target electric field strength, the conductor parameters, the offset distance and the straight-line distance.

3. The method according to claim 2, It is characterized in that The obtaining of the conductor parameters of the conductor to be measured comprises: Obtaining an initial distance between the conductor to be measured and a preset zero potential point; Obtaining the conductor radius of the conductor to be measured; The conductor parameters of the conductor to be measured are determined according to the conductor radius and the initial distance.

4. The method according to claim 1, It is characterized in that The electric field strength detection directions of the basic electric field sensor and the bias electric field sensor are different; the electric field strength detection direction of the basic electric field sensor is parallel to the direction pointing to the center of gravity of the voltage detection device at its own position; the electric field strength detection direction of the bias electric field sensor is, based on the direction pointing to the center of gravity of the voltage detection device at its own position, the direction offset by a preset angle clockwise along the installation plane of at least one bias electric field sensor.

5. The method according to any one of claims 1 to 4, It is characterized in that The step of controlling the at least one basic electric field sensor and the at least one bias electric field sensor to open and close according to the predicted voltage comprises: Determine a range adjustment strategy corresponding to the voltage interval to which the predicted voltage belongs; According to the range adjustment strategy, the at least one basic electric field sensor and the at least one bias electric field sensor are controlled to be on and off.

6. The method according to claim 5, It is characterized in that The voltage interval includes a basic voltage interval and a bias voltage interval, and the maximum value of the basic voltage interval is smaller than the minimum value of the bias voltage interval; The determining of the range adjustment strategy corresponding to the voltage interval to which the predicted voltage belongs includes: If the predicted voltage value belongs to the basic voltage interval, the range adjustment strategy is determined to be a conventional range adjustment strategy; the conventional range adjustment strategy is to only turn on the basic electric field sensor; If the predicted voltage value belongs to the bias voltage interval, the range adjustment strategy is determined to be a bias range adjustment strategy; the bias range adjustment strategy is to only turn on the bias electric field sensor.

7. A voltage detection device, It is characterized in that The device comprises: A voltage prediction module, used to determine a predicted voltage of the conductor to be measured according to a first electric field strength detected by at least one basic electric field sensor on the conductor to be measured; a target detection module, configured to perform on-off control of the at least one basic electric field sensor and the at least one bias electric field sensor according to the predicted voltage, and obtain a target electric field strength detected by the electric field sensor in the on state; The target determination module is used to determine the target voltage value of the conductor to be measured according to the target electric field strength.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program. It is characterized in that When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, It is characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A computer program product comprising a computer program, It is characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

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