Voltage detection method and device, computer device and storage medium

Abstract

The application relates to a voltage detection method and device, computer equipment and a storage medium. The method comprises the following steps: determining a predicted voltage of a to-be-detected conductor according to a first electric field intensity detected by at least one basic electric field sensor on the to-be-detected conductor; controlling the opening and closing of the at least one basic electric field sensor and at least one bias electric field sensor according to the predicted voltage, and obtaining a target electric field intensity detected by an electric field sensor in an opening state; and determining a target voltage value of the to-be-detected conductor according to the target electric field intensity. The method can improve the accuracy of voltage detection.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of computer, in particular to a voltage detection method and device, computer equipment and storage medium. BACKGROUND

[0002] As an indispensable input variable for power system to realize the functions of optimal operation, control and protection, conductor potential is one of the common and large-scale testing projects.

[0003] In the traditional technology, an electric field sensor is usually used to detect the voltage value of the conductor potential, and the basic principle of the ring array electric field sensor measurement is based on Gauss theorem, which measures the electric field by using a plurality of electric field sensor chips around the current-carrying conductor, and inverses the voltage of the conductor according to the measured value and the position of the electric field sensor chip.

[0004] Although this method can detect the voltage value of the conductor potential, it has the problem of inaccurate detection. SUMMARY

[0005] Therefore, it is necessary to provide a voltage detection method, device, computer equipment and storage medium capable of accurately detecting voltage to solve the above technical problems.

[0006] In a first aspect, the present application provides a voltage detection method applied to a voltage detection device, wherein at least two electric field sensors are arranged in the voltage detection device; the at least two electric field sensors include at least one basic electric field sensor and at least one bias electric field sensor; the method comprises:

[0007] determining a predicted voltage of the conductor to be measured according to a first electric field intensity detected by the at least one basic electric field sensor on the conductor to be measured;

[0008] controlling the opening and closing of the at least one basic electric field sensor and the at least one bias electric field sensor according to the predicted voltage, and obtaining a target electric field intensity detected by the electric field sensor in the open state;

[0009] determining a target voltage value of the conductor to be measured according to the target electric field intensity.

[0010] In one embodiment, determining the target voltage of the conductor to be measured according to the target electric field intensity comprises:

[0011] obtaining a conductor parameter of the conductor to be measured;

[0012] obtaining an offset distance between the conductor to be measured and the center of gravity of the voltage detection device, and a straight line distance between any electric field sensor and the center of gravity of the voltage detection device;

[0013] According to the target electric field intensity, the conductor parameter, the offset distance and the straight line distance, the target voltage of the conductor to be measured is determined.

[0014] In one of the embodiments, the conductor parameter of the conductor to be measured is acquired, including:

[0015] The initial distance between the conductor to be measured and the preset zero potential point is acquired.

[0016] The conductor radius of the conductor to be measured is acquired.

[0017] According to the conductor radius and the initial distance, the conductor parameter of the conductor to be measured is determined.

[0018] In one of the embodiments, the electric field intensity detection directions of the basic electric field sensor and the bias electric field sensor are different; the electric field intensity detection direction of the basic electric field sensor is the direction parallel to the position where the basic electric field sensor is located and pointing to the gravity center of the voltage detection device; the electric field intensity detection direction of the bias electric field sensor is the direction obtained by rotating the direction of pointing to the gravity center of the voltage detection device at the position where the bias electric field sensor is located by a preset angle clockwise along the installation plane of the bias electric field sensor.

[0019] In one of the embodiments, the opening and closing control of the at least one basic electric field sensor and the at least one bias electric field sensor is performed according to the predicted voltage, including:

[0020] The range adjustment strategy corresponding to the voltage interval to which the predicted voltage belongs is determined.

[0021] The opening and closing control of the at least one basic electric field sensor and the at least one bias electric field sensor is performed according to the range adjustment strategy.

[0022] In one of the embodiments, the voltage interval includes a basic voltage interval and a bias voltage interval, and the maximum value of the basic voltage interval is less than the minimum value of the bias voltage interval; the range adjustment strategy corresponding to the voltage interval to which the predicted voltage belongs is determined, including:

[0023] If the predicted voltage value belongs to the basic voltage interval, the range adjustment strategy is determined as a normal range adjustment strategy; the normal range adjustment strategy is to only start the basic electric field sensor;

[0024] If the predicted voltage value belongs to the bias voltage interval, the range adjustment strategy is determined as a bias range adjustment strategy; the bias range adjustment strategy is to only start the bias electric field sensor.

[0025] In a second aspect, the application further provides a voltage detection device, including:

[0026] A voltage prediction module is configured to determine a predicted voltage of a conductor to be measured according to a first electric field intensity detected by at least one basic electric field sensor on the conductor to be measured.

[0027] a target detection module configured to control opening and closing of the at least one basic electric field sensor and the at least one bias electric field sensor according to the predicted voltage, and obtain target electric field intensity detected by the electric field sensor in an open state;

[0028] a target determination module configured to determine a target voltage value of the conductor under test according to the target electric field intensity.

[0029] In a third aspect, the present application further provides a computer device, comprising a memory and a processor, wherein the memory stores a computer program, and the processor implements the following steps when executing the computer program:

[0030] determining a predicted voltage of the conductor under test according to first electric field intensity detected by the at least one basic electric field sensor on the conductor under test;

[0031] controlling opening and closing of the at least one basic electric field sensor and the at least one bias electric field sensor according to the predicted voltage, and obtaining target electric field intensity detected by the electric field sensor in an open state;

[0032] determining a target voltage value of the conductor under test according to the target electric field intensity.

[0033] In a fourth aspect, the present application further provides a computer readable storage medium, which stores a computer program, and the computer program implements the following steps when executed by a processor:

[0034] determining a predicted voltage of the conductor under test according to first electric field intensity detected by the at least one basic electric field sensor on the conductor under test;

[0035] controlling opening and closing of the at least one basic electric field sensor and the at least one bias electric field sensor according to the predicted voltage, and obtaining target electric field intensity detected by the electric field sensor in an open state;

[0036] determining a target voltage value of the conductor under test according to the target electric field intensity.

[0037] In a fifth aspect, the present application further provides a computer program product, comprising a computer program, and the computer program implements the following steps when executed by a processor:

[0038] determining a predicted voltage of the conductor under test according to first electric field intensity detected by the at least one basic electric field sensor on the conductor under test;

[0039] controlling opening and closing of the at least one basic electric field sensor and the at least one bias electric field sensor according to the predicted voltage, and obtaining target electric field intensity detected by the electric field sensor in an open state;

[0040] According to the target electric field intensity, a target voltage value of the conductor under test is determined.

[0041] The voltage detection method, device, computer device and storage medium, according to the first electric field intensity detected by the at least one basic electric field sensor on the conductor under test, determine a predicted voltage of the conductor under test; according to the predicted voltage, the at least one basic electric field sensor and the at least one bias electric field sensor are controlled to open and close, and the target electric field intensity detected by the electric field sensor in the open state is obtained; according to the target electric field intensity, a target voltage value of the conductor under test is determined. The embodiment detects the predicted voltage of the conductor under test through the basic electric field sensor and the bias electric field sensor, and then controls the basic electric field sensor and the bias electric field sensor to open and close, and detects the target voltage value according to the adjusted voltage detection device, thereby improving the accuracy of voltage detection. BRIEF DESCRIPTION OF DRAWINGS

[0042] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related art, the drawings needed to be used in the embodiments or related art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0043] Figure 1 An application environment diagram of a voltage detection method provided by the present embodiment is shown in the following figure:

[0044] Figure 2 A flowchart of the first voltage detection method provided by the present embodiment is shown in the following figure:

[0045] Figure 3 A diagram of the basic principle of Gauss theorem provided by the present embodiment is shown in the following figure:

[0046] Figure 4 A structure block diagram of the voltage detection device provided by the present embodiment is shown in the following figure:

[0047] Figure 5 An internal structure diagram of the first computer device provided by the present embodiment is shown in the following figure:

[0048] Figure 6 An internal structure diagram of the second computer device provided by the present embodiment is shown in the following figure. DETAILED DESCRIPTION

[0049] In order to make the purpose, technical solutions and advantages of the present application more clear, the present application will be further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not to limit the present application.

[0050] The voltage detection method provided by the embodiments of the present application can be applied to the application environment as shown in Figure 1 The voltage detection device is provided with at least two electric field sensors; the at least two electric field sensors include at least one basic electric field sensor and at least one bias electric field sensor. The voltage detection device determines the predicted voltage of the conductor to be detected according to the first electric field intensity detected by the at least one basic electric field sensor; controls the opening and closing of the at least one basic electric field sensor and the at least one bias electric field sensor according to the predicted voltage, and obtains the target electric field intensity detected by the electric field sensor in the opening state; and determines the target voltage value of the conductor to be detected according to the target electric field intensity. The electric field intensity detection directions of the basic electric field sensor and the bias electric field sensor are different, and the basic electric field sensor and the bias electric field sensor can be distributed in the six corners of a hexagon; the basic electric field sensor includes basic electric field sensors T1, T2 and T3; the bias sensor includes bias electric field sensors T4, T5 and T6; the offset preset angle β1 corresponding to the bias electric field sensor T4 is 30°; the offset preset angle β2 corresponding to the bias electric field sensor T5 is 60°; the offset preset angle β3 corresponding to the bias electric field sensor T6 is 90°; point O represents the center of gravity of the voltage detection device; point S represents the position point of the conductor to be detected; E1 represents the electric field intensity of the basic electric field sensor T1; E2 represents the electric field intensity of the basic electric field sensor T2; E3 represents the electric field intensity of the basic electric field sensor T3; E4 represents the electric field intensity of the bias electric field sensor T4; E5 represents the electric field intensity of the bias electric field sensor T5; E6 represents the electric field intensity of the bias electric field sensor T6; R represents the straight line distance between any electric field sensor and the center of gravity of the voltage detection device; r1 represents the straight line distance between the basic electric field sensor T1 and the conductor to be detected; r2 represents the straight line distance between the basic electric field sensor T2 and the conductor to be detected; r3 represents the straight line distance between the basic electric field sensor T3 and the conductor to be detected; r4 represents the straight line distance between the bias electric field sensor T4 and the center of gravity of the voltage detection device; r5 represents the straight line distance between the bias electric field sensor T5 and the center of gravity of the voltage detection device; r6 represents the straight line distance between the bias electric field sensor T6 and the center of gravity of the voltage detection device; and x represents the offset distance between the conductor to be detected and the center of gravity of the voltage detection device.

[0051] In an exemplary embodiment, as shown in Figure 2 A voltage detection method is provided, which is described by taking the voltage detection device in Figure 1 as an example, including the following steps 201 to 203. Wherein:

[0052] Step 201, determining the predicted voltage of the conductor to be measured according to the first electric field intensity obtained by the at least one basic electric field sensor for detecting the conductor to be measured.

[0053] Wherein, the electric field sensor can be composed of a ring array electric field sensing chip, and the basic principle of measurement is based on Gauss theorem. For example, the electric field sensor can be based on a tunnel magnetoresistance effect (TMR) sensing chip. The electric field sensor can include a basic electric field sensor and a bias electric field sensor.

[0054] Wherein, the basic electric field sensor can include three basic electric field sensors, which are distributed in an isosceles triangle. The electric field intensity detection direction of each basic electric field sensor is parallel to the direction from its own position to the center of gravity of the voltage detection device, that is, parallel to the direction of the connecting vector between the basic electric field sensor and the center of gravity of the isosceles triangle.

[0055] Wherein, the bias sensor can include three bias sensors. The electric field intensity detection direction of the bias electric field sensor is different from that of the basic electric field sensor. The electric field intensity detection direction of the bias electric field sensor is the direction obtained by shifting a preset angle clockwise along the installation plane of at least one bias electric field sensor based on the direction from its own position to the center of gravity of the voltage detection device.

[0056] Specifically, the voltage detection device controls each basic electric field sensor to obtain the first electric field intensity of the conductor to be measured, and determines the offset distance x of the conductor to be measured according to the first electric field intensity, the conductor parameter, the preset initial point, the preset threshold value and the preset iteration number; and determines the predicted voltage of the conductor to be measured according to the first electric field intensity, the straight line distance R and the offset distance x.

[0057] For example, the electric field intensity E1, the electric field intensity E2 and the electric field intensity E3 can be input into a pre-set distance parameter determination model to obtain the offset distance x of the conductor to be measured, and then the predicted voltage of the conductor to be measured is determined by the following formula (1-1).

[0058] (1-1)

[0059] Wherein, E1 is the first electric field intensity of the basic electric field sensor T1; R is the straight line distance between the basic electric field sensor T1 and the center of gravity of the voltage detection device; x is the offset distance between the conductor to be measured and the center of gravity of the voltage detection device; M is the conductor parameter; U0 is the predicted voltage; θ1 is the included angle between the connecting line between the basic electric field sensor and the center of gravity of the voltage detection device and the connecting line between the conductor to be measured and the center of gravity of the voltage detection device.

[0060] Exemplarily, the distance parameter determination model can be constructed based on Newton method, denoted as y=(x, cosθ1), F=[f1, f2] T , preset initial point y(0)=(x(0), cosθ1 (0))=(0, 1), threshold value Δ=1e-4, and iteration number is 10 times, as shown in the following formulas (1-2) to (1-4).

[0061] (1-2)

[0062] (1-3)

[0063] (1-4)

[0064] wherein n is the iteration number; E1 is the first electric field intensity of the basic electric field sensor T1; E2 is the first electric field intensity of the basic electric field sensor T2; E3 is the first electric field intensity of the basic electric field sensor T3; R is the straight line distance between the basic electric field sensor T1 and the gravity center of the voltage detection device; x is the offset distance between the to-be-measured conductor and the gravity center of the voltage detection device; M is the conductor parameter; U0 is the predicted voltage; θ1 is the included angle between the line connecting the basic electric field sensor and the gravity center of the voltage detection device and the line connecting the to-be-measured conductor and the gravity center of the voltage detection device.

[0065] It should be noted that, according to the determined straight line distance R, the offset distance x between the to-be-measured conductor and the gravity center of the voltage detection device, and the included angle θ1, the straight line distance r1 between the basic electric field sensor T1 and the to-be-measured conductor, the straight line distance r2 between the basic electric field sensor T2 and the to-be-measured conductor, the straight line distance r3 between the basic electric field sensor T3 and the to-be-measured conductor, the included angle α1, the included angle α2, and the included angle α3 can be determined by the following formulas (1-5) to (1-10). In the embodiment, the included angle θ2 and the included angle θ3 can also be determined according to the included angle θ1, θ1+θ2=120°, θ3+θ1=120°.

[0066] (1-5)

[0067] (1-6)

[0068] (1-7)

[0069] (1-8)

[0070] (1-9)

[0071] (1-10)

[0072] Wherein, R is the straight line distance between any basic electric field sensor and the center of gravity of the voltage detection device; x is the offset distance between the conductor to be measured and the center of gravity of the voltage detection device; the included angle a1 is the included angle between the straight line distance r1 and the basic electric field sensor T1 and the center of gravity O; the included angle a2 is the included angle between the straight line distance r2 and the basic electric field sensor T2 and the center of gravity O; the included angle a3 is the included angle between the straight line distance r3 and the basic electric field sensor T3 and the center of gravity O; the angle θ1 is the included angle between the line connecting the basic electric field sensor T1 and the center of gravity O and the offset distance x; the angle θ2 is the included angle between the line connecting the basic electric field sensor T2 and the center of gravity O and the offset distance x; the angle θ3 is the included angle between the line connecting the basic electric field sensor T3 and the center of gravity O and the offset distance x.

[0073] Step 202, according to the predicted voltage, the opening and closing control of at least one basic electric field sensor and at least one bias electric field sensor is carried out, and the target electric field intensity detected by the electric field sensor in the opening state is obtained.

[0074] Specifically, according to the predicted voltage, the opening and closing control of at least one basic electric field sensor and at least one bias electric field sensor is carried out, and the target electric field intensity detected by the electric field sensor in the opening state is obtained.

[0075] In some embodiments, according to the predicted voltage, the opening and closing control of at least one basic electric field sensor and at least one bias electric field sensor is carried out, including: determining the range adjustment strategy corresponding to the voltage interval to which the predicted voltage belongs; according to the range adjustment strategy, the opening and closing control of at least one basic electric field sensor and at least one bias electric field sensor is carried out.

[0076] Specifically, the voltage interval to which the predicted voltage belongs is determined, the range adjustment strategy corresponding to the voltage interval is determined, and according to the range adjustment strategy, the basic electric field sensor or the bias electric field sensor that should be turned on is determined, and the opening and closing control of at least one basic electric field sensor and at least one bias electric field sensor is carried out.

[0077] Step 203, according to the target electric field intensity, the target voltage value of the conductor to be measured is determined.

[0078] Specifically, according to the target electric field intensity, the target electric field intensity is input into the voltage determination model trained in advance, and the target voltage value of the conductor to be measured is obtained.

[0079] The voltage detection method, device, computer device and storage medium determine a predicted voltage of the conductor under test according to a first electric field intensity detected by the at least one basic electric field sensor; control opening and closing of the at least one basic electric field sensor and the at least one bias electric field sensor according to the predicted voltage, and obtain a target electric field intensity detected by the electric field sensor in an open state; and determine a target voltage value of the conductor under test according to the target electric field intensity. The predicted voltage of the conductor under test is detected by the basic electric field sensor and the bias electric field sensor, the opening and closing of the basic electric field sensor and the bias electric field sensor is controlled, and the target voltage value is detected according to the adjusted voltage detection device, so that the accuracy of voltage detection is improved. At the same time, the voltage detection device does not need to be connected to two potentials of a line, and there is no insulation problem; the conductor voltage is inversed according to the measurement value, and there is no requirement for the installation position. Moreover, the predicted voltage can be analyzed according to the micro intelligent system in the voltage detection device, the corresponding sensor is automatically switched according to the predicted voltage, the most suitable mode is intelligently selected, and the requirements of high precision and wide range are balanced.

[0080] In some embodiments, determining the target voltage of the conductor under test according to the target electric field intensity comprises: obtaining a conductor parameter of the conductor under test; obtaining an offset distance between the conductor under test and a gravity center of the voltage detection device, and a straight line distance between any electric field sensor and the gravity center of the voltage detection device; and determining the target voltage of the conductor under test according to the target electric field intensity, the conductor parameter, the offset distance and the straight line distance.

[0081] Specifically, the offset distance between the conductor under test and the gravity center of the voltage detection device, and the straight line distance between any electric field sensor and the gravity center of the voltage detection device are obtained in advance, and the target voltage of the conductor under test is determined according to the target electric field intensity, the conductor parameter, the offset distance and the straight line distance.

[0082] For example, if the target electric field intensity is determined by the basic electric field sensor, the target voltage of the conductor under test is determined by the above formula (1-1). If the target electric field intensity is determined by the bias electric field sensor, the target voltage of the conductor under test is determined by the following formula (1-11).

[0083] (1-11)

[0084] Wherein, U0 is the target voltage; M is the conductor parameter; E4 is the first electric field intensity of the basic electric field sensor T4; E5 is the first electric field intensity of the basic electric field sensor T5; E6 is the first electric field intensity of the basic electric field sensor T6; the included angle a4 is the included angle between the straight line distance r4 and the basic electric field sensor T4 and the center of gravity O; the included angle a5 is the included angle between the straight line distance r5 and the basic electric field sensor T5 and the center of gravity O; the included angle a6 is the included angle between the straight line distance r6 and the basic electric field sensor T6 and the center of gravity O; b1 is the offset preset angle corresponding to the offset electric field sensor T4 (b1 = 30°); b2 is the offset preset angle corresponding to the offset electric field sensor T5 (b2 = 60°); b3 is the offset preset angle corresponding to the offset electric field sensor T6 (b3 = 90°).

[0085] In some embodiments, the conductor parameter of the to-be-tested conductor is obtained, including: obtaining an initial distance between the to-be-tested conductor and a preset zero potential point; obtaining a conductor radius of the to-be-tested conductor; and determining the conductor parameter of the to-be-tested conductor according to the conductor radius and the initial distance.

[0086] Specifically, the initial distance between the to-be-tested conductor and the preset zero potential point is obtained, the conductor radius of the to-be-tested conductor is obtained, and the conductor parameter of the to-be-tested conductor is determined according to the conductor radius and the initial distance through the following formula (1-12).

[0087] (1-12)

[0088] Wherein, M is the conductor parameter; r is the conductor radius of the to-be-tested conductor; x0 is the initial distance. As shown in the basic principle diagram of Gauss theorem in FIG. 1-1, 0V is the preset zero potential point, x0 is the initial distance, U is the voltage of the to-be-tested conductor, r is the conductor radius of the to-be-tested conductor, and x is the distance between the to-be-tested conductor and the electric field sensor. Figure 3

[0089] It should be noted that, according to the determined straight line distance R, the offset distance x between the to-be-tested conductor and the center of gravity of the voltage detection device, the included angle q1 and the included angle q2, the straight line distance r4 between the basic electric field sensor T4 and the to-be-tested conductor, the straight line distance r5 between the basic electric field sensor T5 and the to-be-tested conductor, the straight line distance r6 between the basic electric field sensor T6 and the to-be-tested conductor, the included angle a4, the included angle a5 and the included angle a6 can be determined through the following formulas (1-13) to (1-18) in the embodiment. In the embodiment, the included angle q4, the included angle q5 and the included angle q6 can also be determined according to the included angle q1 and the included angle q2, q4 = q1 + 60°, q5 = q2 + 60°, q6 = q2 - 60°.

[0090] (1-13)

[0091] ​ (1-14)

[0092] (1-15)

[0093] (1-16)

[0094] (1-17)

[0095] (1-18)

[0096] wherein, R is a straight line distance between any basic electric field sensor and the center of gravity of the voltage detection device; x is an offset distance between the conductor to be measured and the center of gravity of the voltage detection device; the included angle a4 is the included angle between the straight line distance r4 and the basic electric field sensor T4 and the center of gravity O; the included angle a5 is the included angle between the straight line distance r5 and the basic electric field sensor T5 and the center of gravity O; the included angle a6 is the included angle between the straight line distance r6 and the basic electric field sensor T6 and the center of gravity O; the angle 1 is the included angle between the line connecting the basic electric field sensor T1 and the center of gravity O and the offset distance x; the angle 2 is the included angle between the line connecting the basic electric field sensor T2 and the center of gravity O and the offset distance x.

[0097] The embodiment obtains the conductor parameter of the conductor to be measured; obtains the offset distance between the conductor to be measured and the center of gravity of the voltage detection device, and the straight line distance between any electric field sensor and the center of gravity of the voltage detection device; and according to the target electric field intensity, the conductor parameter, the offset distance and the straight line distance, the target voltage of the conductor to be measured can be determined more accurately.

[0098] In some embodiments, the voltage interval includes a basic voltage interval and a bias voltage interval, the maximum value of the basic voltage interval is less than the minimum value of the bias voltage interval; determining the range adjustment strategy corresponding to the voltage interval to which the predicted voltage belongs, including: if the predicted voltage value belongs to the basic voltage interval, determining the range adjustment strategy as a conventional range adjustment strategy; the conventional range adjustment strategy is to only turn on the basic electric field sensor; if the predicted voltage value belongs to the bias voltage interval, determining the range adjustment strategy as a bias range adjustment strategy; the bias range adjustment strategy is to only turn on the bias electric field sensor.

[0099] For example, when the target voltage U≤U1(5kV), the system is working in the normal mode, only the basic electric field sensors (T1, T2, T3) measure; at this time, the voltage detection device has the highest accuracy and sensitivity, and is suitable for accurate measurement in a small voltage range; the measurement range thereof can be 1V~5kV. When U1(5kV)<U≤U2(11kV), the system stops the basic electric field sensors (T1, T2 and T3) from working and switches the bias sensor T4 to work; at this time, the voltage detection device expands the voltage measurement range; the measurement range thereof can be 1V~11kV. When U2(11kV)<U≤U3(22kV), the system stops the bias sensor T4 from working and switches the bias sensor T5 to work; at this time, the voltage detection device further improves the measurement range and is suitable for measurement of a larger voltage; the measurement range thereof can be 1V~22kV. When (22kV)<U≤U4(50kV), the system stops the bias sensor T5 from working and switches the bias sensor T6 to work; at this time, the voltage detection device reaches the maximum measurement range; the measurement range thereof can be 1V~50kV. When U>U4, the voltage detection device measurement reaches saturation.

[0100] The embodiment needs to take a smooth transition measure in the mode switching process, can avoid sudden jump of the measurement result, and ensures the continuity and stability of the measurement.

[0101] It should be understood that, although each step in the flowchart involved in each embodiment as described above is shown in sequence according to the arrow, these steps are not necessarily executed in the order indicated by the arrow. Unless otherwise specified herein, there is no strict order limitation for the execution of these steps, and these steps can be executed in other orders. Moreover, at least part of the steps in the flowchart involved in each embodiment as described above can include multiple steps or stages, which are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily sequential, but can be alternately executed with at least part of other steps or steps or stages in other steps.

[0102] Based on the same inventive concept, the embodiment of the present application also provides a voltage detection device for implementing the above-mentioned voltage detection method. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme described in the above method, so the specific limitations in one or more voltage detection device embodiments provided below can refer to the limitations of the voltage detection method described above, which will not be described here.

[0103] In one exemplary embodiment, as Figure 4As shown, a voltage detection device is provided, comprising: a voltage prediction module 10, a target detection module 11 and a target determination module 12, wherein:

[0104] The voltage prediction module 10 is configured to determine a predicted voltage of the conductor under test according to a first electric field intensity detected by at least one basic electric field sensor on the conductor under test;

[0105] The target detection module 11 is configured to control the opening and closing of the at least one basic electric field sensor and the at least one bias electric field sensor according to the predicted voltage, and obtain a target electric field intensity detected by the electric field sensor in the open state;

[0106] The target determination module 12 is configured to determine a target voltage value of the conductor under test according to the target electric field intensity.

[0107] In one embodiment, Figure 4 The target determination module 12 in the voltage detection device is further configured to obtain a conductor parameter of the conductor under test, obtain an offset distance between the conductor under test and the gravity center of the voltage detection device, and obtain a straight line distance between any electric field sensor and the gravity center of the voltage detection device, and determine the target voltage of the conductor under test according to the target electric field intensity, the conductor parameter, the offset distance and the straight line distance.

[0108] In one embodiment, Figure 4 The target determination module 12 in the voltage detection device is further configured to obtain an initial distance between the conductor under test and a preset zero potential point, obtain a conductor radius of the conductor under test, and determine the conductor parameter of the conductor under test according to the conductor radius and the initial distance.

[0109] In one embodiment, Figure 4 The voltage detection device in the voltage detection device is different from the electric field intensity detection direction of the bias electric field sensor; the electric field intensity detection direction of the basic electric field sensor is parallel to the direction of the gravity center of the voltage detection device at the position of the basic electric field sensor; the electric field intensity detection direction of the bias electric field sensor is the direction after the clockwise shift of the preset angle along the installation plane of the at least one bias electric field sensor based on the direction of the gravity center of the voltage detection device at the position of the bias electric field sensor.

[0110] In one embodiment, Figure 4 The target detection module 11 in the voltage detection device is further configured to determine a range adjustment strategy corresponding to the voltage interval to which the predicted voltage belongs, and control the opening and closing of the at least one basic electric field sensor and the at least one bias electric field sensor according to the range adjustment strategy.

[0111] In one embodiment, Figure 4The target detection module 11 is further configured to determine the range adjustment strategy as the conventional range adjustment strategy if the predicted voltage value belongs to the base voltage range; the conventional range adjustment strategy is to only turn on the base electric field sensor; if the predicted voltage value belongs to the bias voltage range, the range adjustment strategy is to determine the bias range adjustment strategy; the bias range adjustment strategy is to only turn on the bias electric field sensor.

[0112] Each module in the aforementioned voltage detection device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in the processor of a computer device in hardware form or independent of it, or stored in the memory of a computer device in software form, so that the processor can call and execute the operations corresponding to each module.

[0113] In one exemplary embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be as follows: Figure 5 As shown, this computer device includes a processor, memory, input / output interfaces (I / O), and a communication interface. The processor, memory, and I / O interfaces are connected via a system bus, and the communication interface is also connected to the system bus via the I / O interfaces. The processor provides computational and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system, computer programs, and a database. The internal memory provides the environment for the operation of the operating system and computer programs stored in the non-volatile storage media. The database stores data. The I / O interfaces are used for exchanging information between the processor and external devices. The communication interface is used for communicating with external terminals via a network. When executed by the processor, the computer program implements a voltage detection method.

[0114] In one exemplary embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 6The computer device shown in the figure includes a processor, a memory, an input / output interface, a communication interface, a display unit and an input device. Among them, the processor, the memory and the input / output interface are connected through a system bus, and the communication interface, the display unit and the input device are connected to the system bus through the input / output interface. Among them, the processor of the computer device is used to provide computing and control capability. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operating system and the computer program in the non-volatile storage medium to run. The input / output interface of the computer device is used to exchange information between the processor and external devices. The communication interface of the computer device is used to communicate with external terminals in a wired or wireless manner. The wireless manner can be realized through WIFI, mobile cellular network, NFC (near field communication) or other technologies. The computer program is executed by the processor to realize a voltage detection method. The display unit of the computer device is used to form a visually visible picture, which can be a display screen, a projection device or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen. The input device of the computer device can be a touch layer overlaid on the display screen, or a key, trackball or touchpad arranged on the shell of the computer device, or an external keyboard, touchpad or mouse, etc.

[0115] Those skilled in the art can understand that, Figure 5 and Figure 6 The structure shown in the figure is only a block diagram of part of the structure related to the scheme of the present application, and does not constitute a limitation on the computer device to which the scheme of the present application is applied. The specific computer device can include more or fewer components than those shown in the figure, or combine certain components, or have a different component arrangement.

[0116] In one embodiment, a computer device is also provided, including a memory and a processor, the memory storing a computer program, and the processor executing the computer program to realize the steps in each of the above method embodiments.

[0117] In one embodiment, a computer readable storage medium is provided, which stores a computer program, and the computer program is executed by a processor to realize the steps in each of the above method embodiments.

[0118] In one embodiment, a computer program product is provided, including a computer program, and the computer program is executed by a processor to realize the steps in each of the above method embodiments.

[0119] It should be noted that the data involved in the present application (including but not limited to data for analysis, stored data, displayed data, etc.) are all information and data authorized by the user or authorized by all parties, and the collection, use and processing of related data need to comply with relevant regulations.

[0120] It can be understood by those skilled in the art that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing related hardware through a computer program. The computer program can be stored in a non-volatile computer readable storage medium, and when the computer program is executed, it can include the processes of the above-mentioned embodiments of each method. Any reference to memory, database or other medium used in the embodiments provided by the present application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical storage, high-density embedded non-volatile memory, resistive memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration but not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The database involved in the embodiments provided by the present application can include at least one of a relational database and a non-relational database. The non-relational database can include a distributed database based on a block chain, etc., without being limited thereto. The processor involved in the embodiments provided by the present application can be a general-purpose processor, a central processing unit, a graphics processing unit, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., without being limited thereto.

[0121] The technical features of the above embodiments can be combined in any way. In order to make the description concise, not all possible combinations of the technical features in the above embodiments are described, but as long as the combination of the technical features does not exist contradictory, it should be considered as the scope of the present application.

[0122] The above-described embodiments are merely illustrative of several embodiments of the present application, and the description is relatively specific and detailed, but should not be understood as a limitation on the scope of the patent. It should be noted that for those skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are all within the scope of the present application. Therefore, the scope of protection of the present application should be subject to the appended claims.

Claims

1. A voltage detection method characterized by, The application is applied to a voltage detection device provided with at least two electric field sensors. The at least two electric field sensors include at least one basic electric field sensor and at least one bias electric field sensor; the method includes: determining a predicted voltage of the conductor to be detected according to a first electric field intensity detected by the at least one basic electric field sensor; if the predicted voltage value belongs to a basic voltage interval, determining a range adjustment strategy as a normal range adjustment strategy; the normal range adjustment strategy is to only start the basic electric field sensor; if the predicted voltage value belongs to a bias voltage interval, determining a range adjustment strategy as a bias range adjustment strategy; the bias range adjustment strategy is to only start the bias electric field sensor; controlling the opening and closing of the at least one basic electric field sensor and the at least one bias electric field sensor according to the range adjustment strategy, and obtaining a target electric field intensity detected by the electric field sensor in the starting state; determining a target voltage value of the conductor to be detected according to the target electric field intensity; wherein the electric field intensity detection directions of the basic electric field sensor and the bias electric field sensor are different; the electric field intensity detection direction of the basic electric field sensor is a direction parallel to the position of the basic electric field sensor and pointing to the gravity center of the voltage detection device; the electric field intensity detection direction of the bias electric field sensor is a direction obtained by clockwise shifting a preset angle along the installation plane of the at least one bias electric field sensor on the basis of the direction of the gravity center of the voltage detection device at the position of the bias electric field sensor; wherein, when the target voltage U is less than or equal to U1, only the basic electric field sensor measures; when U1 is less than U and U is less than or equal to U2, the basic electric field sensor stops working and the bias sensor T4 switches to work; when U2 is less than U and U is less than or equal to U3, the bias sensor T4 stops working and the bias sensor T5 switches to work; when U3 is less than U and U is less than or equal to U4, the bias sensor T5 stops working and the bias sensor T6 switches to work; when U is greater than U4, the voltage detection device measurement reaches saturation.

2. The method of claim 1, wherein, The determination of the target voltage value of the conductor to be detected according to the target electric field intensity includes: in the case that the target electric field intensity is detected by the basic electric field sensor, determining the target voltage value of the conductor to be detected according to the target electric field intensity based on the following formula; wherein, E1 is the first electric field intensity of the basic electric field sensor; R is the straight-line distance between the basic electric field sensor and the gravity center of the voltage detection device; x is the offset distance between the conductor to be detected and the gravity center of the voltage detection device; M is the conductor parameter; U0 is the predicted voltage; θ1 is the included angle between the line connecting the basic electric field sensor and the gravity center of the voltage detection device and the line connecting the conductor to be detected and the gravity center of the voltage detection device.

3. The method of claim 1, wherein, The determination of the target voltage value of the conductor to be detected according to the target electric field intensity includes: in the case that the target electric field intensity is detected by the bias electric field sensor, determining the target voltage value of the conductor to be detected according to the target electric field intensity based on the following formula; Wherein, U0 is a target voltage; M is a conductor parameter; E4 is a first electric field intensity of a basic electric field sensor T4; E5 is a first electric field intensity of a basic electric field sensor T5; E6 is a first electric field intensity of a basic electric field sensor T6; the included angle α4 is an included angle between a straight line distance r4 and the basic electric field sensor T4 and the center of gravity; the included angle α5 is an included angle between a straight line distance r5 and the basic electric field sensor T5 and the center of gravity; the included angle α6 is an included angle between a straight line distance r6 and the basic electric field sensor T6 and the center of gravity; β1 is a preset angle of offset corresponding to the bias electric field sensor T4; β2 is a preset angle of offset corresponding to the bias electric field sensor T5; β3 is a preset angle of offset corresponding to the bias electric field sensor T6.

4. The method according to any of claims 2 or 3, characterized in that, The conductor parameter of the conductor to be measured is acquired, including: An initial distance between the conductor to be measured and a preset zero potential point is acquired; A conductor radius of the conductor to be measured is acquired; The conductor parameter of the conductor to be measured is determined according to the conductor radius and the initial distance.

5. A voltage detection device, characterized by, The device includes: A voltage prediction module is configured to determine a predicted voltage of the conductor to be measured according to a first electric field intensity detected by at least one basic electric field sensor; A target detection module is configured to determine a range adjustment strategy as a normal range adjustment strategy if the predicted voltage value belongs to a basic voltage interval, wherein the normal range adjustment strategy is to only turn on the basic electric field sensor; determine the range adjustment strategy as a bias range adjustment strategy if the predicted voltage value belongs to a bias voltage interval, wherein the bias range adjustment strategy is to only turn on the bias electric field sensor; and control the opening and closing of the at least one basic electric field sensor and the at least one bias electric field sensor according to the range adjustment strategy, and obtain a target electric field intensity detected by the electric field sensor in the opening state; A target determination module is configured to determine a target voltage value of the conductor to be measured according to the target electric field intensity. Wherein, the electric field intensity detection directions of the basic electric field sensor and the bias electric field sensor are different; the electric field intensity detection direction of the basic electric field sensor is a direction parallel to the direction from the position of the basic electric field sensor to the center of gravity of the voltage detection device; and the electric field intensity detection direction of the bias electric field sensor is a direction obtained by offsetting a preset angle clockwise along the mounting plane of the at least one bias electric field sensor on the basis of the direction from the position of the bias electric field sensor to the center of gravity of the voltage detection device. Wherein, when the target voltage U≤U1, only the basic electric field sensor measures; when U1 6.A computer device, comprising a memory and a processor, wherein the memory stores a computer program, and the computer device is configured to perform the method according to any one of claims 1-5 when the computer program is executed by the processor. The processor executes the computer program to realize the steps of the method in any one of claims 1 to 4.

7. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to realize the steps of the method in any one of claims 1 to 4. The computer program is executed by the processor to realize the steps of the method in any one of claims 1 to 4.

8. A computer program product comprising a computer program, characterized in that, The computer program, which when executed by the processor, implements the steps of the method of any one of claims 1 to 4.

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