Electronic device, method of manufacturing same, light emitting device, and display device

Abstract

The present invention provides an electronic device having excellent manufacturability while achieving size reduction. The electronic device has an insulating film substrate, a thin film device, and a through via. The insulating film substrate includes a first main surface and a second main surface, the second main surface being on a side opposite the first main surface. The thin film device includes a metal layer formed on a first main surface of an insulating film substrate. A through via penetrates the insulating film substrate from a first portion within the metal layer and extends to at least the second main surface.

Description

Technical Field

[0001] The present disclosure relates to an electronic device including a thin film device and a manufacturing method thereof, a light emitting device, and a display device. Background Art

[0002] So far, an organic EL display device has been proposed, in which a driving circuit board is arranged on the rear surface of a substrate including a plurality of organic EL devices formed on the front surface thereof, and the plurality of organic EL devices and the driving circuit board are electrically coupled to each other via a coupling layer passing through the substrate (for example, see patent document 1).

[0003] Reference List

[0004] Patent Literature

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2001-92381 Summary of the invention

[0006] Incidentally, there has recently been a demand for reducing the size and weight of electronic devices including a plurality of thin film devices.

[0007] Therefore, it is desirable to provide a small electronic device having excellent manufacturability.

[0008] An electronic device according to an embodiment of the present disclosure includes an insulating film substrate, a thin film device, and a through-hole. The insulating film substrate includes a first main surface and a second main surface, the second main surface being located on a side opposite to the first main surface. The thin film device includes a metal layer formed on the first main surface of the insulating film substrate. The through-hole extends from a first portion in the metal layer to pass through the insulating film substrate and reach the second main surface.

[0009] In the electronic device according to one embodiment of the present disclosure, the thin film device is provided on the insulating film substrate, and this makes it advantageous to reduce the thickness and weight of the entire configuration. In addition, when a through via is provided on the insulating film substrate, a through hole is easily formed. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1A : is a schematic diagram showing an overall configuration example of a display system according to a first embodiment of the present disclosure.

[0011] Figure 1B Show Figure 1A A block diagram showing a detailed configuration example of components of a part of a display system is shown in FIG.

[0012] Figure 2 It is shown Figure 1A Schematic plan view of a plan configuration of a display module is shown in FIG.

[0013] Figure 3A Show Figure 1A Schematic diagram of an overall configuration example of a display module shown in FIG.

[0014] Figure 3B Show Figure 3A 0 is a cross-sectional view of an example of a cross-sectional configuration of a display panel shown in FIG.

[0015] Figure 4 is shown in an enlarged manner. Figure 3B An enlarged cross-sectional view of a portion of a cross section of a display panel is shown in FIG.

[0016] Figure 5 It is shown Figure 1A An enlarged cross-sectional view of a configuration example of a light source is shown in FIG.

[0017] Fig. 6A It shows the manufacturing Figure 3A A first illustrative cross-sectional view of a method of displaying a panel is shown in FIG.

[0018] Figure 6B It shows the manufacturing Figure 3A A second illustrative cross-sectional view of a method of displaying a panel is shown in FIG.

[0019] Figure 6C It shows the manufacturing Figure 3A A third illustrative cross-sectional view of a method of displaying a panel is shown in FIG.

[0020] Fig.6D It shows the manufacturing Figure 3A A fourth illustrative cross-sectional view of a method of displaying a panel is shown in FIG.

[0021] Fig. 6E It shows the manufacturing Figure 3A A fifth illustrative cross-sectional view of a method of displaying a panel is shown in FIG.

[0022] Fig. 6F It shows the manufacturing Figure 3A A sixth illustrative cross-sectional view of a method of displaying a panel is shown in FIG.

[0023] Figure 6G It shows the manufacturing Figure 3A A seventh illustrative cross-sectional view of a method of displaying a panel is shown in FIG.

[0024] Figure 6H It shows the manufacturing Figure 3A An eighth illustrative cross-sectional view of a method of displaying a panel is shown in FIG.

[0025] Fig.6I It shows the manufacturing Figure 3AA ninth illustrative cross-sectional view of a method of displaying a panel is shown.

[0026] Figure 6J It shows the manufacturing Figure 3A A tenth illustrative cross-sectional view of a method of displaying a panel is shown in FIG.

[0027] Figure 6K It shows the manufacturing Figure 3A An eleventh illustrative cross-sectional view of a method of illustrating a display panel.

[0028] Figure 6L It shows the manufacturing Figure 3A A twelfth illustrative cross-sectional view of a method of illustrating a display panel.

[0029] Fig. 7A It shows the manufacturing Figure 3A A first illustrative cross-sectional view of a method of forming a conductive material layer in a display panel is shown.

[0030] Figure 7B It shows the manufacturing Figure 3A A second illustrative cross-sectional view of a method of forming a conductive material layer in a display panel is shown.

[0031] Figure 7C Show manufacturing Figure 3A A third illustrative cross-sectional view of a method of forming a conductive material layer in a display panel is shown in FIG.

[0032] Figure 8 It is schematically shown in Figure 3A Schematic plan view of an example of a positional relationship between a through via of an insulating film substrate and a wiring layer of a relay substrate in a display panel shown in FIG.

[0033] Fig. 9 is a cross-sectional view showing a configuration example of a light source unit according to a first modification example of the first embodiment.

[0034] Fig.10 is a cross-sectional view showing a configuration example of a light source unit according to a second modification example of the first embodiment.

[0035] Fig.11 is a cross-sectional view showing a configuration example of a light source unit according to a third modification example of the first embodiment.

[0036] Fig.12 is a cross-sectional view showing a configuration example of a light source unit according to a fourth modification example of the first embodiment.

[0037] Fig.13 is a cross-sectional view showing a configuration example of a light source unit according to a fifth modification example of the first embodiment.

[0038] Fig.14 is a perspective view showing the appearance of a display device according to a second embodiment of the present disclosure.

[0039] Fig.15 is shown in a decomposed manner. Fig.14 A stereoscopic view of the main body portion is shown in FIG.

[0040] Fig.16 is a cross-sectional view showing an organic EL display device serving as another first modification example of the present disclosure.

[0041] Fig.17A 1 is a first perspective view showing a state where a light emitting device serving as another second modification example of the present disclosure is viewed from a first direction.

[0042] Fig. 17B Shown from the second direction Fig.17A A second stereoscopic view of the state of the light emitting device is shown in FIG.

[0043] Fig.18 It is shown Fig.17A A plan view of a plan configuration of a light emitting device is shown in FIG.

[0044] Fig.19 It is shown Fig.17A A cross-sectional view of the cross-sectional configuration of the light-emitting device shown in FIG.

[0045] Fig. 20 It is shown Fig.17A An enlarged cross-sectional view of a configuration example of a wavelength conversion sheet shown in FIG.

[0046] Fig.21A is a first cross-sectional view illustrating an example of a method of manufacturing an electronic device according to another third modification example of the present disclosure.

[0047] Fig.21B is a second cross-sectional view illustrating an example of a method of manufacturing an electronic device according to another third modification example of the present disclosure.

[0048] Fig. 21C is a third cross-sectional view illustrating an example of a method of manufacturing an electronic device according to another third modification example of the present disclosure.

[0049] Fig.21D is a fourth cross-sectional view illustrating an example of a method of manufacturing an electronic device according to another third modification example of the present disclosure.

[0050] Fig.21E is a first cross-sectional view illustrating an example of a method of manufacturing an electronic device according to another third modification example of the present disclosure.

[0051] Fig.22Ais a first cross-sectional view illustrating an example of a method of manufacturing an electronic device according to another fourth modification example of the present disclosure.

[0052] Fig. 22B is a second cross-sectional view illustrating an example of a method of manufacturing an electronic device according to another fourth modification example of the present disclosure.

[0053] Fig. 22C is a third cross-sectional view illustrating an example of a method of manufacturing an electronic device according to another fourth modification example of the present disclosure.

[0054] Fig.22D is a fourth cross-sectional view illustrating an example of a method of manufacturing an electronic device according to another fourth modification example of the present disclosure.

[0055] Fig.22E is a fifth cross-sectional view illustrating an example of a method of manufacturing an electronic device according to another fourth modification example of the present disclosure. DETAILED DESCRIPTION

[0056] Hereinafter, embodiments of the present disclosure are described in detail with reference to the accompanying drawings. It should be noted that the description is made in the following order.

[0057] 1. First Embodiment (Light Emitting Device)

[0058] 2. Second Embodiment (Liquid Crystal Display Device)

[0059] 3. Other variations

[0060] <1. First Embodiment>

[0061] [1.1 Configuration]

[0062] Figure 1A is a schematic diagram showing a configuration example of a display system 100 including a tiled display, as an example of a display system to which the present technology can be applied.

[0063] For example, the display system 100 displays video content on a large-sized direct-view LED display including a plurality of display modules 151 arranged as a tile. The display system 100 includes a personal computer (PC) 130, a video server 131, a video wall controller 132, and a video wall 133.

[0064] The PC 130 is a general-purpose computer and receives an operation input from a user to provide a command corresponding to the operation content to the video wall controller 132 .

[0065] The video server 131 includes, for example, a server computer. The video server 131 supplies data such as an image signal of video contents to the video wall controller 132 .

[0066] The video wall controller 132 operates according to a command supplied from the PC 130, and causes data including an image signal of video content to be displayed in a distributed manner on the display modules 151-1 to 151-n included in the video wall 133. It should be noted that in this specification, when the display modules 151-1 to 151-n are not individually distinguished, the display modules 151-1 to 151-n are simply referred to as "display modules 151".

[0067] like Figure 1A As shown in the upper right of , the video wall 133 includes display modules 151-1 to 151-n, in each of which pixels including light emitting diodes (LEDs) are arranged in an array. In the video wall 133, images displayed by the individual display modules 151 are combined as tiles to display one image as the entire video wall 133. It is to be noted that the video wall controller 132 and the video wall 133 may have an integrated configuration. A display device in which these video wall controllers 132 and the video wall 133 are integrated may be adopted.

[0068] Figure 1B 1 is a block diagram showing a detailed configuration example of components of a part of the display system 100. Specifically, Figure 1B is a block diagram showing a detailed configuration example of the video wall controller 132 and the display module 151.

[0069] The video wall controller 132 includes terminals of a LAN terminal 171, an HDMI (registered trademark) terminal 172, a DP terminal 173, and a DVI terminal 174. In addition, the video wall controller 32 includes a network IF (interface) 175, an MPU 176, a signal input IF 177, a signal processor 178, a DRAM 179, a signal distributor 180, and output IFs 181-1 to 181-n.

[0070] The LAN (Local Area Network) terminal 171 is a connection terminal such as a LAN cable, for example. The LAN terminal 171 enables communication with the PC 130, which provides a control command corresponding to the user's operation content to the video wall controller 132, and provides an input control command to the MPU 176 via the network IF 175.

[0071] The LAN terminal 171 may be a configuration in which a wired LAN cable is physically coupled, or may be a configuration in which connection is achieved through a so-called wireless LAN using wireless communication.

[0072] The MPU (Micro Processor Unit) 176 receives input of a control command supplied from the PC 130 via the LAN terminal 171 and the network IF 175 , and supplies a control signal corresponding to this control command to the signal processor 178 .

[0073] The HDMI (registered trademark) (High Definition Multimedia Interface) terminal 172, the DP (Display Port) terminal 173, and the DVI (Digital Video Interface) terminal 174 are input terminals for data including image signals. The HDMI (registered trademark) terminal 172, the DP terminal 173, and the DVI terminal 174 are coupled to a server computer serving as the video server 131 to supply the data including the image signal to the signal processor 178 via the signal input IF 177. It should be noted that the video wall controller 132 may include an input terminal based on another standard such as an SDI (Serial Digital Interface) terminal.

[0074] Figure 1B An example in which the video server 131 and the HDMI (registered trademark) terminal 172 are coupled to each other is shown. The HDMI (registered trademark) terminal 172, the DP terminal 173, and the DVI terminal 174 are all different only in the standard and have basically similar functions. Therefore, any one of them is selected and coupled as needed.

[0075] The signal processor 178 adjusts the color temperature, contrast, brightness, etc. of the data including the image signal supplied via the signal input IF 177 based on the control signal supplied from the MPU 176, and supplies the adjusted data to the signal distributor 180. At this time, the signal processor 178 loads the data including the image signal using a coupled DRAM (Dynamic Random Access Memory) 179 as needed and performs signal processing based on the control signal, and supplies the signal processing result to the signal distributor 180.

[0076] The signal distributor 180 distributes data including the picture signal supplied from the signal processor 178 and subjected to signal processing to the display modules 151 - 1 to 151 - n via the corresponding output IFs 181 - 1 to 181 - n .

[0077] The display module 151 includes a driver controller 191 and an LED block 192. The driver controller 191 provides data including image signals for controlling light emission of LEDs included in the LED arrays 922-1 to 922-N to a plurality of LED drivers 921-1 to 921-N included in the LED block 192. The driver controller 191 includes a signal input IF 911, a signal processor 912, and output IFs 913-1 to 913-N.

[0078] The signal input IF 911 receives input of data of an image signal supplied from the video wall controller 132 , and supplies the data to the signal processor 912 .

[0079] The signal processor 912 performs color correction and brightness correction of each display module 151 based on the data of the image signal provided from the signal input IF 911 to generate data for setting the luminous intensity of each LED included in the LED arrays 922-1 to 922-N. The generated data is distributed to the LED drivers 921-1 to 921-N of the LED block 192 via the corresponding output IFs 913-1 to 913-N.

[0080] The LED block 192 includes LED drivers 921 - 1 to 921 -N and LED arrays 922 - 1 to 922 -N.

[0081] Hereinafter, in some cases, the LED drivers 921 - 1 to 921 -N are simply referred to as “LED drivers 921 ”, and the LED arrays 922 - 1 to 922 -N are simply referred to as “LED arrays 922 ”.

[0082] The LED driver 921 drives the LEDs arranged in the corresponding LED array 922 based on data for setting the light emission intensity of the LEDs supplied from the driver controller 191 , and performs PWM (Pulse Width Modulation) control of light emission.

[0083] Figure 2 1 is a plan view showing the configuration of the display module 151. Figure 2 As shown, the display module 151 includes LED arrays 922 arranged in an array on a front surface of a PCB (printed circuit board) substrate 961. Each LED array 922 configures a pixel in the display module 151.

[0084] In the LED array 922, LED chips 941R, 941G, and 941B are installed. Each of the chips 941R, 941G, and 941B is configured by μ-LED, which is an ultra-small LED in micrometers. The μ-LED (micro LED) configured with the corresponding LED chips 941R, 941G, and 941B is a light-emitting device that emits red, green, and blue light beams, respectively. The LED chips 941R, 941G, and 941B are sub-pixels that configure the unit pixels in the display module 151 accordingly.

[0085] Next, refer to Figure 3A and Figure 3B , describing the detailed structure of the display module 151. Figure 3A 2 is a schematic diagram of a display module 151 . The display module 151 includes a display panel 210 and a control circuit 220 for driving and controlling the display panel 210 . Figure 3B is a cross-sectional view showing a portion of the display panel 210 .

[0086] The display module 151 is a so-called LED display and uses LEDs as display pixels. The display panel 210 is a specific example of an “electronic device” corresponding to the present disclosure. Figure 3A As shown, the display panel 210 is obtained by stacking a mounting substrate 210A and an opposing substrate 210B on each other. The front surface of the opposing substrate 210B (the surface on the side opposite to the mounting substrate 210A) is an image display surface. The opposing substrate 210B has a display area in the middle portion and a frame area as a non-display area around the display area. For example, the opposing substrate 210B is arranged at a position opposite to the mounting substrate 210A at a predetermined interval. It should be noted that the opposing substrate 210B can be brought into contact with the upper surface of the mounting substrate 210A. The opposing substrate 210B, for example, includes a light-transmitting substrate that transmits visible light, and includes, for example, a glass substrate, a transparent resin substrate, or a transparent resin film.

[0087] The mounting substrate 210A includes, for example, the light source unit 10, the circuit board 20, and the mounting member 56. The circuit board 20 is mechanically bonded to the rear surface of the counter substrate 210B. The circuit board 20 is also electrically coupled to the counter substrate 210B through a plurality of coupling portions 50.

[0088] like Figure 3B As shown, the light source unit 10 includes an insulating film substrate 1 serving as a light source substrate and a plurality of light sources 2. Figure 3B As shown, the insulating film substrate 1 has a front surface 1FS and a rear surface 1BS opposite to the front surface 1FS in the thickness direction (Z-axis direction). A plurality of light sources 2 are provided on the front surface 1FS of the insulating film substrate 1. A circuit substrate 20 is provided on the rear surface 1BS side of the insulating film substrate 1.

[0089] The counter substrate 210B includes a thin film device 4 including a driving device 41. For example, the driving device 41 is provided on the insulating film substrate 1 of the light source unit 10. Figure 3B As shown, the counter substrate 210B may further include a resin layer 61. In addition, a transparent sealing layer 60 may be provided between the light source unit 10 and the resin layer 61. For example, the sealing layer 60 is composed of an organic film such as a silicone resin, an acrylic resin or an epoxy resin, or an inorganic film such as a Si-based compound layer (SiNx, SiOx, SiONx or SiOCx) or a TEOS film. The sealing layer 60 has a single-layer structure of the above-mentioned organic film or inorganic film, or a stacked structure of these films. The sealing layer 60 may be a composite film of the above-mentioned organic film and inorganic film. The inorganic film may be formed by, for example, an ALD (atomic layer deposition) method or a CVD (chemical vapor deposition) method.

[0090] (Light source unit 10)

[0091] like Figure 3BAs shown, the light source unit 10 includes an insulating film substrate 1, a plurality of light sources 2, a thin film device 4, an insulating layer 4Z, and a resin layer 5. The insulating film substrate 1 is, for example, a film-like member containing an organic material such as a resin, and has electrical insulation properties. The insulating film substrate 1 is preferably flexible. As the insulating film substrate 1, a resin film including, for example, PI (polyimide), PET (polyethylene terephthalate), PC (polycarbonate), PEN (polyethylene naphthalate), PEI (polyetherimide), COP (cycloolefin polymer), LCP (liquid crystal polymer) or fluororesin can be used. As another example, an insulating film substrate obtained by forming an insulating resin layer of polyimide, epoxy-based material, etc. on the surface of a metal-based substrate such as aluminum (Al) can be used. As yet another example, as the insulating film substrate 1, a film base material containing a glass resin such as a glass epoxy resin represented by FR4 or a glass composite resin represented by CEM3 can be used. The insulating film substrate 1 has a front surface 1FS as a first main surface and a back surface 1BS as a second main surface. A plurality of light sources 2 and a plurality of thin film devices 4 disposed on the insulating layer 4Z are mounted on the front surface 1FS of the insulating film substrate 1. The thin film device 4 includes at least one of a wiring layer and a thin film transistor. In the present embodiment, the thin film device 4 includes a driving device 41 as a thin film transistor.

[0092] Figure 4 It is shown in a further enlarged manner. Figure 3B FIG. 1 is an enlarged cross-sectional view of a portion of the light source unit 10 shown in FIG. Figure 4 As shown, the thin film device 4 further includes a metal layer 40 disposed on the front surface 1FS of the insulating film substrate 1, and a wiring layer 42 selectively stacked in the overlapping portion 40A in the metal layer 40. The wiring layer 42 is, for example, an additional metal layer that can be configured of the same material as the metal layer 40. It should be noted that the thickness of the wiring layer 42 is allowed to be greater than the thickness of the metal layer 40. In addition, the circuit board 20 (see Figure 3B ) is arranged to be opposite to the rear surface 1BS of the insulating film substrate 1. Figure 3B As shown, the wiring layer 51 is formed on the front surface 20FS of the circuit board 20 opposite to the rear surface 1BS of the insulating film substrate 1, and the wiring layer 52 is formed on the side of the rear surface 20BS opposite to the front surface 20FS. The wiring layer 51 and the wiring layer 52 are coupled to each other through the through hole 20V that passes through the circuit board 20 in the Z-axis direction.

[0093] As described above, the light source unit 10 is coupled to the circuit board 20 via the coupling portion 50. Specifically, the driving device 41 provided on the insulating film substrate 1 is coupled to the wiring layer 51 provided on the front surface 20FS of the circuit board 20 via the metal layer 40, the through via 10V passing through the insulating film substrate 1, and the conductive material layer 54 provided at the distal end of the through via 10V. The through via 10V extends from the overlapping portion 40A of the metal layer 40 overlapping with the wiring layer 42 in the Z-axis direction to pass through the insulating film substrate 1 so as to be exposed to the rear surface 1BS. Note that, for example, the through via 10V is formed by selectively digging out a predetermined area of ​​the rear surface 1BS of the insulating film substrate 1 by laser processing, and then filling the conductive material in the through via 10V, so that the through via 10V can be formed. At this time, the metal layer 40 and the wiring layer 42 formed on the front surface 1FS serve as an etching stopper.

[0094] Furthermore, the mounting component 56 is provided on the back surface 20BS of the circuit board 20. The mounting component 56 is coupled to the wiring layer 52 provided on the back surface 20BS via the conductive material layer 55.

[0095] (Light source 2 and thin film device 4)

[0096] A plurality of light sources 2 are provided on the front surface 1FS of the insulating film substrate 1. On the front surface 1FS of the insulating film substrate 1, a plurality of wiring layers 42 having a predetermined pattern shape are formed to allow independent light emission control for each light source 2 or for every two or more light sources 2. The plurality of wiring layers 42 allow display control of the plurality of light sources 2. The driving device 41 is a driver IC that drives each light source 2, that is, a driver IC that turns each light source 2 on and off.

[0097] The driving device 41 is, for example, a bottom-gate thin film transistor. For example, the driving device 41 includes a gate electrode 41G, a gate insulating film 41Z, a semiconductor layer 41SC, a source electrode 41S, a drain electrode 41D, and a protective film 41P. In this embodiment, the metal layer 40 is integrally provided with the drain electrode 41D. It should be noted that the metal layer 40 can be formed in the same layer as the gate electrode 41G.

[0098] The gate electrode 41G controls the carrier density of the semiconductor layer 41SC by applying a gate voltage to the driving device 41. The gate electrode 41G is configured of, for example, one or more of Mo (molybdenum), Al (aluminum), and aluminum alloy. The gate electrode 41G may be a single-layer film or a multi-layer film.

[0099] The gate insulating film 41Z is configured of one or more of SiO2, Si3N4, SiON (silicon oxynitride) and aluminum oxide (Al2O3). The gate insulating film 41Z may be a single-layer film or a multi-layer film.

[0100] The semiconductor layer 41SC includes, for example, at least one type of oxide of Si (silicon), In (indium), Ga (gallium), Zn (zinc), Sn (tin), Al (aluminum), and Ti (titanium) as a main component. Examples of silicon-containing materials include amorphous silicon and low-temperature polysilicon. The semiconductor layer 41SC forms a channel between the source electrode 41S and the drain electrode 41D by applying a gate voltage.

[0101] The source electrode 41S and the drain electrode 41D are made of, for example, one or more of Mo (molybdenum), Al (aluminum), Cu (copper), Ti (titanium), ITO, and TiO. The source electrode 41S and the drain electrode 41D may be a single-layer film or a multi-layer film.

[0102] The insulating layer 4Z is configured of an organic material such as polyimide.

[0103] like Figure 4 As shown, the light source unit 10 may further include a buffer layer 10BL. A buffer layer 10BL is provided between the front surface 1FS of the insulating film substrate 1 and the thin film device 4. The buffer layer 10BL may include an organic material or an inorganic material. As an organic material configuring the buffer layer 10BL, polyimide, acrylic acid, epoxy resin or an insulating resin such as silicone can be used. In addition, as an inorganic material configuring the buffer layer 10BL, for example, an inorganic insulating material such as SiNx (silicon nitride), SiOx (silicon oxide), SiON (silicon oxynitride), Al2O3 (aluminum oxide) or TEOS (tetraethyl orthosilicate) is given. By providing the buffer layer 10BL, it is possible to prevent water vapor from entering the thin film device 4 through the insulating film substrate 1. In addition, by providing the buffer layer 10BL, when the insulating film substrate 1 is deformed by bending, expansion, etc. due to moisture absorption, it is possible to prevent the insulating film substrate 1 from being deformed due to moisture absorption. In addition, the insulating film substrate 1 often has significant scratches and unevenness on the front surface 1FS compared to, for example, a glass substrate. Thus, by providing the buffer layer 10BL so as to uniformly cover the front surface 1FS, a smooth front surface can be formed. By providing the driver device 41 on the smooth buffer layer 10BL, it is expected that the stability of the performance of the driver device 41 will be improved.

[0104] For example, after the copper foil is bonded to the insulating film substrate 1, the wiring layer 42 is formed by patterning using photolithography. As another example, after a metal film is formed on the insulating film substrate 1 by using electroplating or vacuum film forming technology, the wiring layer 42 can be formed by patterning using photolithography. In addition, the wiring layer 42 can be formed by a printing method such as screen printing or an inkjet method. Examples of constituent materials of the wiring layer 42 include copper (Cu), aluminum (Al), silver (Ag), and alloys of these materials. Note that the thickness of the wiring layer 42 is preferably 1 μm or more. One reason for this is that the wiring layer 42 can be used as an etching stopper during an etching process (e.g., laser processing) to form a via filled with a through-hole 10V. Thus, in order to effectively form a wiring layer 42 having a larger thickness, the wiring layer 42 preferably has a stacked structure of a first layer 421 as a metal film and a second layer 422 as a metal layer having a thickness greater than the first layer 421. For example, the first layer 421 may be a plating base layer, and the second layer 422 may be a plating layer formed by performing a plating process using the first layer 421 as the plating base layer.

[0105] (Resin layer 5)

[0106] The resin layer 5 is, for example, a transparent insulating film (acrylic or epoxy), a black insulating film (a material obtained by mixing black particles such as black carbon into an acrylic or epoxy material), or a stacked film obtained by stacking a black insulating film on an inorganic insulating film. The resin layer 5 preferably transmits light from the light source 2 as much as possible, or does not reflect light from the light source 2 as much as possible.

[0107] (Details of light source 2)

[0108] Figure 5 1 is an enlarged cross-sectional view showing an example of the configuration of the light source 2 shown in FIG. Figure 5 As shown, the light source 2 includes a light emitting device 21. For example, the light emitting device 21 includes a semiconductor layer 23 including a light emitting body, and the semiconductor layer 23 and a transparent layer 24.

[0109] The transparent layer 24 is configured of, for example, sapphire or silicon carbide (SiC). The semiconductor layer 23 is formed by, for example, stacking an n-type semiconductor layer, an active layer, and a p-type semiconductor layer in sequence from the transparent layer 24 side. The n-type semiconductor layer is configured of, for example, an n-type nitride semiconductor (e.g., n-type GaN). The active layer is configured of, for example, a nitride semiconductor (e.g., n-type GaN) having a quantum well structure. The p-type semiconductor layer is configured of, for example, a p-type nitride semiconductor (e.g., p-type GaN). The semiconductor layer 23 is configured of, for example, a blue LED (light emitting diode; light emitting diode) that emits blue light (e.g., a wavelength of 440nm to 460nm).

[0110] like Figure 5 As shown, in the light emitting device 21 , light L emitted from the active layer of the semiconductor layer 23 propagates upward through the transparent layer 24 .

[0111] It should be noted that the light source 2 may further include, for example, a sealing lens having a dome shape (hemispherical shape) to cover the light emitting device 21 .

[0112] In addition, the resin layer 61 and the resin layer 62 may be selectively provided on the sealing layer 60. The resin layer 61 and the resin layer 62 have openings provided in the region overlapping with the light source 2 in the Z-axis direction, and thus do not hinder the transmission of the light L from the light source 2. The resin layer 61 includes, for example, a black resin having a high light-shielding property. The resin layer 62 is a protective layer for protecting the resin layer 61, and epoxy resin, acrylic resin, or polyurethane resin having high hardness and low reflectivity may be used. The resin layer 61 and the resin layer 62 do not need to be provided.

[0113] (Circuit Board 20)

[0114] The circuit board 20 is a member that is electrically and mechanically coupled to the light source unit 10 and performs relaying between the light source unit 10 and a power supply circuit, a drive circuit, or other circuits. The circuit board 20 can be configured by, for example, a flexible film member similar to the insulating film substrate 1. As a constituent material of the circuit board 20, a constituent material similar to the constituent material of the insulating film substrate 1 can be used. That is, as the circuit board 20, a resin film can be used, including, for example, PI (polyimide), PET (polyethylene terephthalate), PC (polycarbonate), PEN (polyethylene naphthalate), PEI (polyetherimide), LCP (liquid crystal polymer), or fluororesin. As another example, as the circuit board 20, a circuit board obtained by forming an insulating resin layer of polyimide, epoxy-based material, etc. on the surface of a metal-based substrate such as aluminum (Al) can be used. As another example, as the circuit board 20, a film substrate including a glass-containing resin can be used, for example, the glass-containing resin is a glass epoxy resin represented by FR4 or a glass composite resin represented by CEM3. A plurality of wiring layers 52 are formed on the front surface 20FS (i.e., the surface opposite to the insulating film substrate 1) of the circuit board 20. In addition, a plurality of wirings 53 are formed on the rear surface 20BS (i.e., the surface on the side opposite to the insulating film substrate 1) of the circuit substrate 20. As described above, the wiring layers 51 and 52 are electrically continuous with each other, for example, via the through vias 20V.

[0115] In addition, the circuit board 20 is bonded to the light source unit 10 via the conductive material layer 54. Specifically, for example, the through-hole 10V and the wiring layer 51 provided on the front surface 20FS of the circuit board 20 are bonded to each other to sandwich the conductive material layer 54. In addition, it is preferred that the light source unit 10 and the circuit substrate 20 are bonded to each other at multiple portions via the conductive material layer 54. One of the reasons is that in the case where the light source unit 10 and the circuit board 20 are coupled to each other at multiple points, the light source unit 10 is more stably held relative to the circuit board 20. In addition, multiple channels such as a signal transmission path or a power supply path between the light source unit 10 and the circuit board 20 can be ensured, which makes it possible to provide more functions. For the same reason, it is also preferred that the mounting component 56 is bonded to the circuit board 20 via the conductive material layer 55 at multiple portions. In addition, as the constituent materials of the conductive material layers 54 and 55, for example, conductive paste and solder or anisotropic conductive adhesive (ACA) are appropriately used.

[0116] [1.2 Manufacturing method]

[0117] Next, refer to FIG. 6A to FIG. 6L , a description is given of a method of manufacturing the mounting substrate 210A of the display panel 210.

[0118] First, if Fig. 6A As shown, the support member SP1 is bonded to the rear surface 1BS of the insulating film substrate 1 by means of an adhesive or the like. The support member SP1 is preferably configured of a high-rigidity material such as glass, quartz, silicon, ceramic, or the like. Next, a buffer layer 10BL is formed in such a manner as to uniformly cover the front surface 1FS of the insulating film substrate 1. Before forming the buffer layer 10BL, the front surface 1FS may be cleaned. Examples of cleaning methods include water cleaning, organic cleaning, ultrasonic cleaning, UV (ultraviolet) cleaning, and ozone cleaning. Before forming the buffer layer 10BL, a predetermined pretreatment may also be performed. Specifically, UV treatment, plasma treatment, coating treatment with a silane coupling agent, and the like may be performed to improve the adhesion between the front surface 1FS and the buffer layer 10BL. As a method of forming the buffer layer 10BL, in the case where the buffer layer 10BL is formed of a resin material, for example, slit coating, screen printing, gravure printing, spin coating, or spray coating may be used. When the buffer layer 10BL is formed of an inorganic material, in addition to the above-mentioned various methods, a CVD (chemical vapor deposition) method, a PVD (physical vapor deposition) method, an ALD (atomic layer deposition) method, a sputtering method or other methods may be used. In addition, the buffer layer 10BL may also be heat-treated as needed. After the buffer layer 10BL is formed, the gate electrode 41G is selectively formed at a predetermined position of the buffer layer 10BL.

[0119] Then, if Figure 6BAs shown, a gate insulating film 41Z, a semiconductor layer 41SC, a source electrode 41S and a drain electrode 41D, a protective film 41P, and an insulating layer 4Z are sequentially formed. When the source electrode 41S and the drain electrode 41D are formed, a metal layer 40 integrated with the drain electrode 41D is formed.

[0120] Then, if Figure 6C As shown, partial regions of the insulating layer 4Z and the protective film 41P are selectively removed to form an opening K4Z that passes through the insulating layer 4Z and the protective film 41P. This exposes the overlapping portion 40A of the metal layer 40.

[0121] Then, if Fig.6D As shown, the first layer 421 is formed by, for example, sputtering to completely cover the exposed portion of the insulating layer 42 and the metal layer 40. Fig. 6E As shown, the second layer 422 is stacked on the first layer 421 to form a stacked film by an electroplating method using the first layer 421 as an electroplating base layer. At this time, the second layer 422 is formed to fill the opening K4Z. In addition, as shown in FIG. Fig. 6F As shown, the wiring layer 42 is obtained by patterning a stacked film of a first layer 421 and a second layer 422 by, for example, photolithography. It should be noted that the thickness of the wiring layer 42 is desirably, for example, 2 μm or more.

[0122] Then, if Figure 6G As shown, the resin layer 5, the light source 2, the sealing layer 60, the resin layer 61 and the resin layer 62 are sequentially formed. In addition, the support member SP2 is bonded to the surface of the resin layer 62 by an adhesive or the like. As the support member SP2, a material with high rigidity such as glass, quartz, silicon, ceramics, etc. is preferred.

[0123] Then, if Figure 6H As shown, after the support member SP1 is peeled off from the back surface 1BS of the insulating film substrate 1, a predetermined area of ​​the back surface 1BS is selectively removed to form the through hole 10H. The through hole 10H can be formed by laser irradiation.

[0124] In more detail, Fig.6I As shown, the through hole 10H is formed in the metal layer 40 integral with the drain electrode 41D at a position overlapping with the overlapping portion 40A in the Z-axis direction. Fig.6I is shown in an enlarged manner Figure 6HAn enlarged cross-sectional view of a portion of the cross-sectional configuration of the intermediate light source unit 10 manufactured in the same step. The through hole 10H is a through hole in which the first through hole 10H1 and the second through hole 10H2 are connected. The first through hole 10H1 penetrates the insulating film substrate 1, and the second through hole 10H2 penetrates the buffer layer 10BL and the gate insulating film 41Z. In addition, in order to form the through hole 10H, the first through hole 10H1 can be formed under a first laser irradiation condition, and then the second through hole 10H1 can be formed under a second laser irradiation condition different from the first laser irradiation condition. For another example, the through hole 10H can be obtained by forming the first through hole 10H1 under the same laser irradiation condition and then forming the second through hole 10H2. For example, in a case where both the insulating film substrate 1 and the buffer layer 10BL include organic materials, the first through hole 10H1 and the second through hole 10H2 can be continuously formed using a nanosecond laser under the same laser irradiation condition. However, in the case where the insulating film substrate 1 includes an organic material and the buffer layer 10BL includes an inorganic material, it is difficult to continuously form the first through hole 10H1 and the second through hole 10H2 using a nanosecond laser. In this case, for example, the insulating film substrate 1 and the buffer layer 10BL are sequentially irradiated with a picosecond laser (short pulse laser), causing multiphoton absorption in both the insulating film substrate 1 and the buffer layer 10BL. Thus, the first through hole 10H1 and the second through hole 10H2 can be continuously formed. In the case of forming the through hole 10H by laser irradiation, the wiring layer 42 functions as an etching stopper.

[0125] After forming the through hole 10H, Figure 6J As shown, the through hole 10H is filled with a conductive material to form a through via 10V.

[0126] After forming the through via 10V, as Figure 6K As shown, the circuit board 20 having the mounting components 56 provided on the back surface 20BS is prepared. An adhesive material 54Z including a conductive filler in an insulating resin is applied to the front surface 20FS of the circuit board 20 in advance to cover the wiring layer 51 .

[0127] Then, if Figure 6L As shown, the circuit board 20 is pressed against the insulating film substrate 1 to allow the anisotropic conductive adhesive 54Z to be sandwiched between the distal end portion of the through via 10V and the wiring layer 51. Thus, the anisotropic conductive adhesive 54Z pressed between the distal end portion of the through via 10V and the wiring layer 51 becomes the conductive material layer 54, and the circuit substrate 20 is bonded to the insulating film substrate 1.

[0128] FIG. 7A to FIG. 7C 2 is a cross-sectional view showing a process of forming the conductive material layer 54 in the mounting substrate 210A. Fig. 7AAs shown, the distal end of the through hole 10V of the light source unit 10 and the wiring layer 51 of the circuit board 20 are opposite to each other. It should be noted that around the wiring layer 51, an insulating layer 20Z having a thickness greater than that of the wiring layer 51 is provided. Figure 7B As shown, anisotropic conductive adhesive 54Z is applied to wiring layer 51 and insulating layer 20Z. Note that anisotropic conductive adhesive 54Z may be formed to cover the distal end of through-hole 10V and rear surface 1BS of insulating film substrate 1. Finally, pressing is performed to sandwich anisotropic conductive adhesive 54Z between the distal end of through-hole 10V and wiring layer 51. Thus, as Figure 7C As shown, the conductive material layer 54 is formed. Thus, the light source unit 10 and the circuit substrate 20 are bonded to each other. As described above, the conductive material layer 54 is formed, and the coupling portion 50 is completed.

[0129] Through the above steps, the mounting substrate 210A is completed. Thereafter, the counter substrate 210B is stacked on the mounting substrate 210A, and thus the display panel 210 is completed.

[0130] It should be noted that Figure 8 As shown, in the mounting substrate 210A, it is desirable that the X-axis dimension 10VX and the Y-axis dimension 10VY of the through via 10V are smaller than the X-axis dimension 51X and the Y-axis dimension 51Y of the exposed portion of the wiring layer 51 . Figure 8 1 is a schematic plan view schematically showing an example of the positional relationship between the through via 10V and the exposed portion of the wiring layer 51 in the XY plane. In the mounting substrate 210A, for example, it is desired that the dimension 51X is 1.5 times or more and 3 times or less than the dimension 10VX, and the dimension 51Y is 1.5 times or more and 3 times or less than the dimension 10VY. When the dimension of the through via 10V in the XY plane is made smaller than the dimension of the exposed portion of the wiring layer 51 in the XY plane as described above, a margin can be ensured when positioning the light source unit 10 and the circuit board 20 in the XY plane. It is to be noted that Figure 8 The case where the size 10VX and the size 10VY are substantially equal to each other and the size 51X and the size 51Y are substantially equal to each other is exemplified, but the present disclosure is not limited to this case. That is, the plane shape of the through-hole 10V and the plane shape of the exposed portion of the wiring layer 51 are not limited to the case of a substantially square shape, and may be a substantially rectangular shape. As another example, the plane shape thereof may be a rectangular shape with rounded corners, or may be a substantially circular shape or a substantially elliptical shape.

[0131] [1.2 Action]

[0132] The display panel 210 of the present embodiment uses the insulating film substrate 1, so the display panel 210 has the advantages of reduced thickness and weight compared to the case of using a glass substrate. In addition, the through-hole 10V is used to ensure an electrical coupling path from the rear surface 1BS of the insulating film substrate 1 to the thin film device 4. Thus, it is not necessary to provide wiring around the light-emitting area of ​​the front surface 1FS of the insulating film substrate 1. Therefore, for example, when a plurality of display modules 151 each including the display panel 210 are arranged, a larger seamless display area can be formed.

[0133] In addition, in the display panel 210, through holes 10H can be formed in the insulating film substrate 1 to fill the through via holes 10V by etching processing (such as laser processing) using the metal layer 40 as an etching stopper. This is suitable for easily forming the through via holes 10V having a fine size while ensuring high positional accuracy and high dimensional accuracy of the through via holes 10V.

[0134] In the display panel 210, the metal layer 40 is integrally formed with the drain electrode 41D, so the manufacturing process is simplified compared to the case where the metal layer 40 is formed separately. In addition, in the present embodiment, the metal layer 40 may be integrally formed with the source electrode 41S.

[0135] In addition, the display panel 210 further includes a wiring layer 42 selectively stacked on the overlapping portion 40A in the metal layer 40. That is, when viewed from the overlapping portion 40A of the metal layer 40, the wiring layer 42 is disposed on the side opposite to the insulating film substrate 1. Thus, when the through hole 10H is formed by etching, the wiring layer 42 can be used as an etching stopper. Thus, by providing the wiring layer 42, it is not necessary to form the metal layer 40 to a thickness suitable for serving as an etching stopper, and thus it is possible to further reduce the thickness of the metal layer 40 or the thickness of the drain electrode 41D and the source electrode 41S formed together with the metal layer 40.

[0136] In addition, the display panel 210 further includes a buffer layer 10BL disposed between the front surface 1FS of the insulating film substrate 1 and the thin film device 4. Thus, even if scratches or bumps are generated on the front surface 1FS, a smooth surface can be formed by providing the buffer layer 10BL. In the case where the driving device 41 is provided on the buffer layer 10BL having a smooth surface, it is expected that the stability of the performance of the driving device 41 will be improved. Specifically, in the case where the buffer layer 10BL is configured by an inorganic material, a smooth surface can be obtained compared to the case where the buffer layer 10BL is configured by an organic material.

[0137] In addition, during the manufacturing process of the display panel 210, the first through hole 10H1 and the second through hole 10H2 can be sequentially formed by causing multiphoton absorption in both the insulating film substrate 1 and the buffer layer 10BL by irradiation with a short pulse laser. In this case, the initial time of the manufacturing process can be reduced.

[0138] In addition, in the display panel 210, the light source unit 10 and the circuit board 20 are bonded to each other via the conductive material layer 54. Therefore, for example, compared with the case where the bonding is achieved through a connector, the weight of each coupling portion between the light source unit 10 and the circuit board 20 can be simplified, miniaturized, thinned and reduced. Therefore, compared with the case where a connector is used, the display panel 210 can be miniaturized, and the number of light sources 2 per unit area can be increased. That is, a high degree of integration of multiple light sources 2 can be achieved. In addition, compared with the case where a connector is used, manufacturability is also improved. Specifically, in the display panel 210, the light source unit 10 and the circuit board 20 are both bonded to each other at multiple parts via the conductive material layer 54. As described above, when the light source unit 10 and the circuit board 20 are both coupled at multiple points, the light source unit 10 is more stably maintained relative to the circuit board 20. In addition, multiple channels, such as a signal transmission path or a power supply path between each light source unit 10 and the circuit board 20, can be ensured, and therefore, the display panel 210 can have a greater number of functions.

[0139] In addition, in the display panel 210, the display panel 210 has flexibility, or both the insulating film substrate 1 and the circuit board 20 have flexibility. This makes it possible to realize the display system 100 including a curved screen, for example.

[0140] [1.3 Effect]

[0141] As described above, according to the display panel 210 of the present embodiment, the thin film device 4 is provided on the insulating film substrate 1. This makes it possible to reduce the thickness and weight of the entire configuration. In addition, when the through hole 10V is provided on the insulating film substrate 1, the through hole 10H is easily formed. Thus, a small display panel 210 with excellent manufacturability can be realized. In addition, while arranging a plurality of light sources at a higher density, excellent luminous performance can also be exerted.

[0142] [1.4 Modification of the First Embodiment]

[0143] (First Modification)

[0144] Fig. 9: is a cross-sectional view showing a configuration example of a light source unit 10A according to a first modification of the first embodiment. The light source unit 10 of the above-mentioned first embodiment illustrates a case where the driving device 41 is a bottom-gate thin-film transistor. In contrast, in the light source unit 10A as this modification, the driving device 41 is a top-gate thin-film transistor. Specifically, the driving device 41 of the light source unit 10A has a structure in which a semiconductor layer 41SC, a gate insulating film 41Z, and a gate electrode 41G are sequentially formed on a buffer layer 10BL formed on an insulating film substrate 1. In addition, the gate electrode 41G is covered by a protective film 41P. In addition, a source electrode 41S and a drain electrode 41D are provided on the protective film 41P, and a portion of the source electrode 41S and a portion of the drain electrode 41D extend in the Z-axis direction to couple to the semiconductor layer 41SC. In addition, the driving device 41 of the light source unit 10A includes a metal layer 43 instead of the metal layer 40. The metal layer 43 is formed in the same layer as the gate electrode 41G, that is, formed on the gate insulating film 41Z. The metal layer 43 is provided in a region different from the gate electrode 41G in the XY plane. Fig.10 In the light source unit 10A, in the Z-axis direction, the wiring layer 42 is stacked over the metal layer 43 through the intermediary layer of the drain electrode 41D. Note that, in the light source unit 10A, the wiring layer 42 may be stacked over the metal layer 43 through the intervention of the source electrode 41S. Even in the light source unit 10A, the wiring layer 42 may be used as an etching stopper when forming the through hole 10H.

[0145] Even in a light emitting device including such a light source unit 10A, actions and effects similar to those of the light emitting device including the light source unit 10 can be expected.

[0146] (Second Modification)

[0147] Fig.10 1 is a cross-sectional view showing a configuration example of a light source unit 10B according to a second modification of the first embodiment. In the light source unit 10B, the wiring layer 42 is provided between the gate insulating film 41Z and the drain electrode 41D in the Z-axis direction. For example, the wiring layer 42 is provided directly on the metal layer 43. Even in the light source unit 10B, the wiring layer 42 can be used as an etching stopper when forming the through hole 10H.

[0148] Even in a light emitting device including such a light source unit 10B, actions and effects similar to those of the light emitting device including the light source unit 10 can be expected.

[0149] (Third Modification)

[0150] Fig.111 is a cross-sectional view showing a configuration example of a light source unit 10C according to a third modification of the first embodiment. In the light source unit 10C, the wiring layer 42 is provided on the source electrode 41S and the drain electrode 41D. The wiring layer 42 is electrically continuous with the metal layer 43 via the drain electrode 41D, for example. Even in the light source unit 10C, the wiring layer 42 can be used as an etching stopper when forming the through hole 10H. It should be noted that the wiring layer 42 can be electrically continuous with the metal layer 43 via the source electrode 41S.

[0151] Even in a light emitting device including such a light source unit 10C, actions and effects similar to those of the light emitting device including the light source unit 10 can be expected.

[0152] (Fourth Modification)

[0153] Fig.12 is a cross-sectional view showing an example of the configuration of a light source unit 10D according to a fourth variation of the first embodiment. In the light source unit 10D, the wiring layer 42 is disposed between the gate insulating film 41Z and the drain electrode 41D in the Z-axis direction. In addition, the driving device 41 of the light source unit 10D includes a metal layer 43 instead of the metal layer 40. The metal layer 43 is formed on the same layer as the gate electrode 41G, that is, formed on the buffer layer 10BL. The metal layer 43 is disposed in a region different from the gate electrode 41G in the XY plane. The configuration of the light source unit 10D is substantially the same as that of the light source unit 10 except for those points. For example, the wiring layer 42 is directly disposed on the metal layer 43. Even in the light source unit 10D, the wiring layer 42 can be used as an etching stopper when forming the through hole 10H.

[0154] Even in a light emitting device including such a light source unit 10D, actions and effects similar to those of the light emitting device including the light source unit 10 can be expected.

[0155] (Fifth Modification)

[0156] Fig.13 1 is a cross-sectional view showing a configuration example of a light source unit 10E according to a fifth modification of the first embodiment. In the light source unit 10E, the wiring layer 42 is provided on the drain electrode 41D. In addition, the wiring layer 42 is covered by the insulating layer 4Z together with the source electrode 41S and the drain electrode 41D. Except for these points, the configuration of the light source unit 10E is substantially the same as that of the light source unit 10. Even in the light source unit 10E, the wiring layer 42 can be used as an etching stopper when forming the through hole 10H.

[0157] Even in a light emitting device including such a light source unit 10E, actions and effects similar to those of the light emitting device including the light source unit 10 can be expected.

[0158] <2. Second Embodiment>

[0159] [2.1 Configuration]

[0160] Fig.14 The appearance of a display device 101 according to a second embodiment of the present technology is shown. The display device 101 includes a display panel 210, and is used as, for example, a thin-screen television device. The display device 101 has a configuration in which a flat-plate-shaped main body portion 102 for displaying an image is supported by a stand 103. It should be noted that the display device 101 is used as a fixed type when placed on a horizontal surface such as a floor, a shelf, or a table in a state in which the stand 103 is attached to the main body portion 102, but the display device 101 can be used as a wall-mounted type in a state in which the stand 103 is removed from the main body portion 102.

[0161] Fig.15 Shown in decomposition Fig.14 The main body 102 shown in . The main body 102 includes, for example, a front external member (frame) 111, a panel module 112, and a rear external member (rear cover) 113 in sequence from the front side (observer side). The front external member 111 is a frame-shaped member covering the front peripheral edge portion of the panel module 112, and a pair of speakers 114 are arranged on the lower side. The panel module 112 is fixed to the front external member 111, and on its rear surface, a power supply substrate 115 and a signal substrate 116 are mounted, and a mounting bracket 117 is fixed. The mounting bracket 117 is provided for mounting a wall bracket, a mounting substrate, etc., as well as the mounting bracket 103. The rear external member 113 covers the rear surface and side surfaces of the panel module 112.

[0162] [2.2 Function and Effect]

[0163] The display device 101 includes a display panel 210 suitable for reducing thickness and weight. Therefore, reduction in thickness and weight of the display device 101 is expected. In addition, in the display panel 210, a plurality of light sources 2 are arranged at a higher density. This enables the display device 101 to exert excellent display performance.

[0164] <3. Other Modifications>

[0165] The present disclosure has been described above through embodiments and variations, but the present disclosure is not limited to the above embodiments, etc., and various modifications are allowed. For example, the material, type, layout position, shape, etc. of the components of the display panel described in the above embodiments are not limited to those described above.

[0166] (Other first variant examples)

[0167] For example, the above-described first embodiment exemplifies an LED display including a plurality of LEDs, but the technology of the present disclosure can also be applied to, for example, an organic EL display including an organic light emitting device.

[0168] Fig.16 A cross-sectional configuration of a display device 500 as an organic EL display serving as another first modification example of the present disclosure is shown. For example, the display device 500 includes a supporting substrate 510, an image display layer 520, and a protective substrate 530. The display device 500 is, for example, a top emission display device that emits light H (HR, HG, and HB) for image display generated in the image display 520 to the outside via the protective base 530. This allows an image to be displayed on a surface (display surface M1) on one side of which the protective base 530 is disposed.

[0169] The image display layer 520 includes a plurality of organic light emitting devices 526 that emit light H using an organic electroluminescent phenomenon. In this case, for example, the image display layer 520 includes a red organic light emitting device 526R that emits red light HR (e.g., having a wavelength of about 620 nm), a green organic light emitting device 526G that emits green light HG (e.g., having a wavelength of about 530 nm), and a blue organic light emitting device 526B that emits blue light HB (e.g., having a wavelength of about 460 nm).

[0170] More specifically, for example, the image display layer 520 includes a plurality of driving devices 521, an interlayer insulating layer 522, a plurality of driving wirings 523, a planarizing insulating layer 524, an intralayer insulating layer 525, a red organic light emitting device 526R, a green organic light emitting device 526G, and a blue organic light emitting device 526B, a protective layer 527, an adhesive layer 528, and a color filter 529. For example, the components of this series of image display layers 520 are formed in the above order on one surface of the supporting substrate to be stacked in this order.

[0171] [Multiple drive devices]

[0172] For example, each of the plurality of driving devices 521 is a device that drives a corresponding one of the red organic light emitting device 526R, the green organic light emitting device 526G, and the blue organic light emitting device 526B, and is arranged in a matrix. For example, each of the plurality of driving devices 521 is a thin film transistor (TFT: thin film transistor) and is coupled to the driving wiring 523.

[0173] [Interlayer insulation layer]

[0174] The interlayer insulating layer 522 is a layer that electrically insulates the plurality of driving devices 521 from the surroundings, and includes, for example, any one or more types of insulating materials, such as silicon oxide (SiO2) or PSG (phosphosilicate glass). For example, the interlayer insulating layer 522 is formed to cover the plurality of driving devices 521 and the supporting substrate 510 surrounding the plurality of driving devices 521.

[0175] [Multiple drive wiring]

[0176] Each of the plurality of drive wirings 523 is a wiring used as a signal line for driving a corresponding one of the red organic light emitting device 526R, the green organic light emitting device 526G, and the blue organic light emitting device 526B, and includes, for example, any one or two or more types of conductive materials, such as aluminum (Al) or aluminum-copper alloy (AlCu). Each of the plurality of drive wirings 523 is coupled to a corresponding one of the red organic light emitting device 526R, the green organic light emitting device 526G, and the blue organic light emitting device 526B. It should be noted that, for example, two drive wirings 523 are provided for each drive device 521, and, for example, the two drive wirings 523 are used as a gate signal line and a drain signal line.

[0177] [Planarization insulating layer]

[0178] The planarization insulating layer 524 is a layer for electrically isolating each of the driving device 521 and the driving wiring 523 from each of the red organic light emitting device 526R, the green organic light emitting device 526G, and the blue organic light emitting device 526B. It should be noted that the planarization insulating layer 524 also plays the role of a layer for planarizing the substrate on which each of the red organic light emitting device 526R, the green organic light emitting device 526G, and the blue organic light emitting device 526B is arranged. The planarization insulating layer 524 includes, for example, any one or more types of insulating materials, such as silicon oxide (SiO2).

[0179] [Red organic light emitting device, green organic light emitting device and blue organic light emitting device]

[0180] The red organic light emitting devices 526R, the green organic light emitting devices 526G, and the blue organic light emitting devices 526B are arranged in a matrix similar to the driving device 521. Assuming that the red organic light emitting devices 526R, the green organic light emitting devices 526G, and the blue organic light emitting devices 526B are taken as one set, the image display layer 520 includes a plurality of sets of the red organic light emitting devices 526R, the green organic light emitting devices 526G, and the blue organic light emitting devices 526B.

[0181] The red organic light emitting device 526R includes, for example, a lower electrode layer 5261, an organic light emitting layer 5262, and an upper electrode layer 5263. For example, the lower electrode layer 5261, the organic light emitting layer 5262, and the upper electrode layer 5263 are stacked on the planarization insulating layer 524 in this order.

[0182] The lower electrode layer 5261 is individual electrodes arranged in a matrix similar to the plurality of driving devices 521, and includes, for example, any one or two or more types of conductive materials such as silver (Ag) or gold (Au).

[0183] The organic light-emitting layer 5262 is a layer that emits red light HR and is, for example, a laminate including a plurality of layers. For example, in addition to the light-emitting layer that generates red light HR, the plurality of layers include any one or more types of a hole injection layer, a hole transport layer, an electrode injection layer, a hole transport layer, and the like.

[0184] Unlike the lower electrode layer 5261 (independent electrode) arranged in a matrix, the upper electrode layer 5263 is a common electrode extending through each of the red organic light emitting device 526R, the green organic light emitting device 526G, and the blue organic light emitting device 526B. The upper electrode 5263 includes, for example, any one or two or more types of light-transmitting conductive materials such as indium tin oxide (ITO: Indium Tin Oxide) to introduce red light HR emitted from the organic light emitting layer 5262 into the protective substrate 530.

[0185] The green organic light emitting device 525G has a configuration similar to that of the red organic light emitting device 526R, except that it includes, for example, an organic light emitting layer 5262 that emits green light HG instead of the organic light emitting layer 5262 that emits red light HR. The blue organic light emitting device 526B has a configuration similar to that of the red organic light emitting device 526R, except that it includes, for example, an organic light emitting layer 5262 that emits blue light HB instead of the organic light emitting layer 5262 that emits red light HR.

[0186] [Insulation layer within the layer]

[0187] The interlayer insulating layer 526 is a layer for isolating the red organic light emitting device 526R, the green organic light emitting device 526G, and the blue organic light emitting device 526B from one another, and includes, for example, any one or two or more types of insulating materials such as polyimide.

[0188] [Protective layer]

[0189] The protective layer 527 is a layer that protects the red organic light emitting device 526R, the green organic light emitting device 526G, the blue organic light emitting device 526B, etc., and includes, for example, any one or two or more types of light-transmitting dielectric materials such as silicon nitride (SiN).

[0190] [Adhesive layer]

[0191] The adhesive layer 528 is a layer that adheres the protective layer 527 and the color filter 529 to each other, and includes, for example, any one or two or more types of adhesives such as a light-transmitting thermosetting resin.

[0192] [Color Filter]

[0193] The color filter 529 is a member that transmits red light HR, green light HG, and blue light HB generated in the red organic light emitting device 526R, the green organic light emitting device 526G, and the blue organic light emitting device 526B, respectively. It should be noted that the color filter 529 also plays a role in preventing the contrast from being reduced due to external light entering the image display layer 520.

[0194] The color filter 529 includes, for example, a red filter region 529R corresponding to the red organic light emitting device 526R, a green filter region 529G corresponding to the green organic light emitting device 526G, and a blue filter region 529B corresponding to the blue organic light emitting device 526B.

[0195] Even in such a display device 500, when the technology of the present disclosure is applied, reduction in thickness and weight is expected. In addition, even in the display device 500, a plurality of organic light-emitting devices 526 can be arranged at a high density. This enables the display device 500 to exert excellent display performance.

[0196] (Other Second Modifications)

[0197] Furthermore, the technology of the present disclosure is also applicable to the light emitting device 600 described below.

[0198] Fig.17A and Fig. 17B Each is a cross-sectional view showing a configuration example of a light emitting device 600 serving as another second modification example of the present disclosure. Fig.17A and Fig. 17B The light emitting device 600 is shown in a state when viewed from opposite directions. Fig.18 It is shown Fig.17A 600 is a plan view of a planar configuration example of the light emitting device 600 shown in FIG. Fig.19 It is shown Fig.17A 600 is a cross-sectional view of an example of a cross-sectional configuration of a light emitting device 600 shown in FIG. Fig.19 Shown along Fig.18 The light emitting device 600 is a cross-sectional view taken along the cutting line XIX-XIX and viewed in the direction of the arrow. The light emitting device 600 is suitable as a surface light source, for example, used as a direct-type backlight source mounted on a liquid crystal display device.

[0199] For example, the light emitting device 600 includes a plurality of light source units 610, a relay substrate 620, and a flexible film 630. The plurality of light source units 610 and the relay substrate 620 have substantially the same structure as the light source unit 10 and the circuit substrate 20 described in the first embodiment described above. Each of the plurality of light source units 610 extends in the X-axis direction and is arranged side by side in the Y-axis direction. On the other hand, the relay substrate 620 extends in the Y-axis direction, for example, and is mechanically bonded to the plurality of light source units 610, respectively. The relay substrate 620 is also electrically connected to the plurality of light source units 610, respectively, through a plurality of coupling portions 650. The flexible film 630 is, for example, a reflective sheet, and has, for example, a high reflectivity with respect to the light from the light source 2. The flexible film 630 may include titanium oxide or Ag (silver) as a material having a high reflectivity. Specifically, for example, the flexible film 630 is a white resist layer. Examples of white resists include inorganic materials such as titanium oxide (TiO2) fine particles or barium sulfate (BaSO4) fine particles, and organic materials such as porous acrylic resin fine particles or polycarbonate resin fine particles having countless pores for light scattering. Epoxy resins can also be used as a constituent material of the flexible film 630. In addition, the flexible film 630 can be configured by a resin containing fine particles of an inorganic material such as titanium oxide (TiO2) fine particles or barium sulfate (BaSO4) fine particles.

[0200] It should be noted that in this modification, the longitudinal direction of the light source unit 610 is considered to be the X-axis direction, the lateral direction of the light source unit 610 is considered to be the Y-axis direction, and the thickness direction of the light source unit 610 is considered to be the Z-axis direction. The X-axis direction, the Y-axis direction, and the Z-axis direction are orthogonal to each other.

[0201] like Fig.17A As shown, each light source unit 610 includes an insulating film substrate 1 and a plurality of light sources 2. Fig.19 As shown, the insulating film substrate 1 has a front surface 1FS and a rear surface 1BS on the side opposite to the front surface 1FS in the thickness direction (Z-axis direction). A plurality of light sources 2 are arranged on the front surface 1FS ( Fig.19 ). The plurality of light sources 2 are arranged in a row at predetermined intervals along the X-axis direction which is the length direction of the insulating film substrate 1. In addition, the flexible film 630 extends along the XY plane and is provided on the front surface 1FS side of the insulating film substrate 1 in a manner covering all of the plurality of light source units 610. The plurality of light source units 610 are preferably fixed to the flexible film 630 by, for example, adhesion. The relay substrate 620 is provided on the rear surface 1BS side of the insulating film substrate 1.

[0202] like Fig.18 and Fig.19As shown, the light emitting device 600 includes a thin film device 4 including a driving device 41. For example, the driving device 41 may be disposed on the insulating film substrate 1 of each light source unit 610, or may be disposed on the relay substrate 620. Fig.19 As shown, the light emitting device 600 may further include a spacer 6, a diffusion sheet 7, a wavelength conversion sheet 8, and an optical sheet group 9. In addition, a sealing layer 60 may be disposed between the light source unit 610 and the diffusion sheet 7.

[0203] (Light source unit 610)

[0204] For example, the plurality of light source units 610 are preferably arranged spaced apart from each other along the Y-axis direction. Fig.17A , Fig. 17B and Fig.18 Specifically, Fig.18 As shown in FIG. 1 , the width W1 of each light source unit 610 in the Y-axis direction is preferably narrower than the interval W2 between adjacent light source units 610. One reason for this is that the constituent materials of the insulating film substrate 1 and the like can be reduced to reduce weight. Fig.17A , Fig. 17B and Fig.18 In the example shown in FIG. 8 , eight light source units 610 are coupled to one relay substrate 620 , but the present disclosure is not limited thereto. 7 or less light source units 610 or 9 or more light source units 610 may be connected to one relay substrate 620 .

[0205] (Wavelength conversion sheet 8)

[0206] The wavelength conversion sheet 8 is arranged to be opposite to the plurality of light sources 2 . Fig. 20 It is shown in an enlarged manner Fig.19 FIG. 8 is an enlarged cross-sectional view of a portion of the wavelength conversion sheet 8 shown in FIG. Fig. 20 As shown, the wavelength conversion sheet 8 includes, for example, particulate wavelength conversion material 81. The wavelength conversion material 81 includes, for example, a fluorescent material (fluorescent substance) such as a fluorescent pigment or a fluorescent dye or a quantum dot, and converts the light from the light source 2 into light having a wavelength different from the original wavelength by the principle of fluorescence emission or the like through the light excitation from the light source 2, thereby emitting the light. It should be noted that in Fig. 20 In FIG. 8 , for simplicity, the wavelength conversion material 81 is drawn as particles, but the present disclosure is not limited to the case where the wavelength conversion material 81 is particles.

[0207] The wavelength conversion material 81 included in the wavelength conversion sheet 8 absorbs the blue light emitted from the light source 2 and converts a portion thereof into red light (e.g., a wavelength of 620nm to 750nm) or green light (e.g., a wavelength of 495nm to 570nm). In this case, the light of the light source 2 passes through the wavelength conversion sheet 8, and thus the red, green, and blue light beams are combined to produce white light. As another example, the wavelength conversion material 81 included in the wavelength conversion sheet 8 may absorb blue light to convert this portion of it into yellow light. In this case, the light of the light source 2 passes through the wavelength conversion sheet 8, and thus the yellow and blue light beams are combined to produce white light.

[0208] The wavelength conversion material 81 included in the wavelength conversion sheet 8 preferably includes quantum dots. Quantum dots are particles having a major axis of about 1nm to 100nm and have discrete energy levels. The energy state of the quantum dot depends on its size, so by changing the size, the emission wavelength can be freely selected. In addition, the spectral width of the quantum dot-emitted light is narrow. By combining such a light beam with a steep peak, the color gamut is expanded. Therefore, using quantum dots as wavelength conversion materials allows the color gamut to be easily expanded. In addition, quantum dots have high responsiveness, so that the light of the light source 2 can be effectively used. In addition, the stability of quantum dots is high. Examples of quantum dots include compounds of group 12 elements and group 16 elements, compounds of group 13 elements and group 16 elements, compounds of group 14 elements and group 16 elements, and quantum dots are, for example, CdSe, CdTe, ZnS, CdS, PbS, PbSe, or CdHgTe. In addition, due to requests for Cd-free quantum dots caused by environmental restrictions such as RoHS, quantum dots include quantum dots using InP-based materials, perovskite CsPbBr3-based materials, Zn(Te, Se), or silver indium sulfide which is one of the I-III-VI group ternary materials as core materials.

[0209] (Diffuser 7)

[0210] The diffusion sheet 7 is an optical member arranged between the wavelength conversion sheet 8 and the plurality of light sources 2. The diffusion sheet 7 is used to obtain a uniform angular distribution of incident light. As the diffusion sheet 7, one diffusion plate or one diffusion sheet may be used, or two or more diffusion plates or two or more diffusion sheets may be used. In addition, the diffusion sheet 7 may be a plate-shaped optical member having a constant thickness and a constant hardness.

[0211] (Spacer 6)

[0212] The spacer 6 is a member for maintaining the optical distance between the light source 2 and the diffusion sheet 7 .

[0213] (Optical sheet set 9)

[0214] The optical sheet group 9 is an optical member arranged on the light output surface side of the wavelength conversion sheet 8 (i.e., the side opposite to the diffusion sheet 7 when viewed from the wavelength conversion sheet 8). The optical sheet group 9 includes, for example, a sheet or a film for improving brightness. Fig.19 In the example shown, the optical sheet group 9 includes an optical sheet 91 and an optical sheet 92 sequentially stacked on the wavelength conversion sheet 8. The optical sheet 91 and the optical sheet 92 may be bonded to each other and integrated. The optical sheet 91 is, for example, a prism sheet. The optical sheet 92 is, for example, a reflective polarizing film such as a DBEF (double brightness enhancement film). It should be noted that the number of optical sheets included in the optical sheet group 9, the types of the plurality of optical sheets included in the optical sheet group 9, the stacking order, etc. may be freely selected.

[0215] Even in such a light emitting device 600, when the technology of the present disclosure is applied, a reduction in thickness and weight can be expected. In addition, even in the light emitting device 600, a plurality of light sources 2 can be arranged at a higher density. Thus, the light emitting device 600 can exert excellent light emitting performance.

[0216] In addition, in the light-emitting device 600, a plurality of light source units 610 in each of which a plurality of light sources 2 are arranged are coupled to a relay substrate 620. This makes it possible to finely adjust the arrangement position of each of the plurality of light source units 610, and thus the arrangement position of each light source 2 can be easily optimized. In addition, this is also advantageous for lightweighting of the light-emitting device 600. That is, in the case where a plurality of light source units 610 are connected by a relay substrate 620, for example, compared with a configuration in which a plurality of light sources are arranged on a plate-like substrate, the amount of material used for the insulating film substrate 1 can be reduced while arranging the plurality of light sources 2, thereby achieving lightweighting and low cost. Therefore, according to the light-emitting device 600, a high-precision distribution of luminous brightness can be achieved while reducing weight and cost.

[0217] In the light emitting device 600 of the present embodiment, a plurality of light source units 610 are arranged side by side and spaced apart from each other in the Y-axis direction. Thus, compared with a configuration in which a plurality of light sources 2 are arranged on a plate-shaped insulating film substrate, the amount of material used in the insulating film substrate 1 can be reduced while arranging the plurality of light sources 2, thereby achieving weight reduction and cost reduction.

[0218] In addition, in the light-emitting device 600 of the present embodiment, when the width W1 of the light source unit 610 in the Y-axis direction is narrower than the interval W2 between the multiple light source units 610 adjacent to each other in the Y-axis direction, when a predetermined number of light sources 2 are arranged as the entire light-emitting device 600, the amount of material used in the insulating film substrate 1 can be further reduced compared to, for example, a case where the width W1 is equal to or greater than the interval W2, which makes it possible to further reduce weight and cost.

[0219] Furthermore, in the light emitting device 600 of the present embodiment, the plurality of light sources 2 are arranged in a row along the X-axis direction in the insulating film substrate 1. Thus, when a predetermined number of light sources 2 are arranged as the entire light emitting device 600, the amount of material used in the insulating film substrate 1 can be further reduced, and the weight and cost can be further reduced, compared to, for example, a case where the light sources 2 are arranged in a plurality of columns.

[0220] (Other third variant examples)

[0221] The electronic device of the present disclosure may use a stacked film in which a conductive film including copper or the like is preformed on an insulating film substrate. However, such a conductive film of the stacked film generally has large unevenness on its surface. Therefore, it is desirable to smooth the surface of the conductive film by polishing or the like. This is to improve the quality of the thin film transistor in the thin film device.

[0222] Fig.21A The laminated film SF is shown to form a conductive film 44 on the front surface 1FS of the insulating film substrate 1. The back surface 1BS of the laminated film SF is bonded to the support member SP1. In the case of forming a light emitting device using such a laminated film SF, it is preferable to perform different types of processing between the region AR1 where the driving device 41 in the thin film device 4 is to be formed and the region AR2 where the wiring layer 42 is to be formed.

[0223] Specifically, Fig.21B As shown in FIG. 1 , by removing the conductive film 44 in the region AR1 where the driving device 41 is to be formed, the front surface 1FS of the insulating film substrate 1 is exposed. On the other hand, the conductive film 44 itself in the region AR2 where the wiring layer 42 is formed remains as it is. Fig. 21C As shown, for example, a conductive film Z41G having a uniform thickness of 1 μm or less is formed by, for example, sputtering to cover the exposed insulating film substrate 1. The conductive film Z41G can be used as the gate electrode 41G of the driving device 41. Next, as shown in FIG. Fig.21D As shown in FIG. 1 , a thin film device 4 including a driving device 41 is formed in the region AR1, and a thin film device 4 including a wiring layer 42 is formed in the region AR2. Fig.21E As shown, the resin layer 5 is formed to integrally cover both the regions AR1 and AR2. At this time, in order to make the upper surface of the resin layer 5 flat, it is preferable to set the thickness of the resin layer 5 in the region AR1 to be greater than the thickness of the resin layer 5 in the region AR2. This makes it possible to stably bond the upper surface of the resin layer 5 to the support member SP2, and when forming a through hole in the insulating film substrate 1, its positional accuracy and dimensional accuracy can be improved.

[0224] (Other fourth variant examples)

[0225] The electronic device of the present disclosure may be manufactured as follows.

[0226] First, if Fig.22A As shown, the insulating film substrate 1 is prepared and then the back surface 1BS thereof is bonded to the support member SP1.

[0227] Next, if Fig. 22B As shown, for example, a conductive film 45 having a uniform thickness of 1 μm or less is formed by sputtering. The conductive film 45 provided in the region AR1 can be used as the gate electrode 41G of the driving device 41. The conductive film 45 provided in the region AR2 can configure part of the wiring layer 42.

[0228] Next, if Fig. 22C As shown, the plated film 46 is selectively formed only in the region AR2 by the plating process using the conductive film 45 provided in the region AR2 as a base layer.

[0229] Next, if Fig.22D As shown, the thin film device 4 including the driving device 41 is formed in the region AR1 , and the thin film device 4 including the wiring layer 42 is formed in the region AR2 .

[0230] Afterwards, if Fig.22E As shown, the resin layer 5 is formed to integrally cover both the regions AR1 and AR2. At this time, in order to make the upper surface of the resin layer 5 flat, it is preferable to set the thickness of the resin layer 5 in the region AR1 to be greater than the thickness of the resin layer 5 in the region AR2. This makes it possible to stably bond the upper surface of the resin layer 5 to the support member SP2, and when forming a through hole in the insulating film substrate 1, its positional accuracy and dimensional accuracy can be improved.

[0231] In addition, in the above-mentioned embodiments, etc., a light-emitting device including a plurality of light sources (each light source including a light-emitting device) is exemplified to describe the present disclosure, but the electronic device of the present disclosure is not limited thereto. For example, the electronic device of the present disclosure may include various electronic devices such as an imaging device or a magnetic sensor. In addition, the thin film device is not limited to a thin film transistor, and may be a thin film device including only a redistribution layer, etc.

[0232] As described above, an electronic device according to an embodiment of the present disclosure includes an insulating film substrate, a thin film device, and a through-hole. The insulating film substrate includes a first main surface and a second main surface, and the second main surface is located on a side opposite to the first main surface. The thin film device includes a metal layer formed on the first main surface of the insulating film substrate. The through-hole extends from a first portion in the metal layer to pass through the insulating film substrate and reach the second main surface. According to an electronic device according to an embodiment of the present disclosure, the thin film device is disposed on the insulating film substrate, and therefore the electronic device has the advantage of reducing the thickness and weight of the overall configuration. In addition, when the through-hole is disposed on the insulating film substrate, it is easy to form a through hole.

[0233] In addition, the effects described here are merely exemplary and are not limited to the description thereof, and other effects may be provided. In addition, the present technology may take the following configurations. (1)

[0235] An electronic device, comprising:

[0236] an insulating film substrate including a first main surface and a second main surface, the second main surface being located on a side opposite to the first main surface;

[0237] A thin film device including a metal layer formed on a first main surface of an insulating film substrate; and

[0238] The through via extends from the first portion in the metal layer to pass through the insulating film substrate and reach at least the second major surface. (2)

[0240] The electronic device according to (1), wherein the thin film device further includes an additional metal layer selectively stacked in the first portion within the metal layer. (3)

[0242] The electronic device according to (1) or (2), further including: a buffer layer provided between the first main surface of the insulating film substrate and the thin film device. (4)

[0244] The electronic device according to (3), wherein the buffer layer includes an inorganic material. (5)

[0246] The electronic device according to any one of (1) to (3), wherein the insulating film substrate includes an organic material. (6)

[0248] The electronic device according to (5), wherein the organic material is at least one of PI (polyimide), PET (polyethylene terephthalate), PC (polycarbonate), PEN (polyethylene naphthalate), and COP (cycloolefin polymer). (7)

[0250] The electronic device according to any one of (1) to (6), wherein the insulating film substrate has flexibility. (8)

[0252] The electronic apparatus according to any one of (1) to (7), wherein the thin film device includes at least one of a wiring layer and a thin film transistor. (9)

[0254] The electronic device according to any one of (1) to (7), wherein:

[0255] The thin film device includes a thin film transistor, the thin film transistor includes a gate electrode, a source electrode and a drain electrode, and

[0256] The metal layer is formed in the same layer as the gate electrode, or is formed integrally with the source electrode or the drain electrode. (10)

[0258] The electronic device according to (2), wherein the additional metal layer includes a plating layer. (11)

[0260] A light emitting device, comprising:

[0261] an insulating film substrate including a first main surface and a second main surface, the second main surface being located on a side opposite to the first main surface;

[0262] A thin film device including a metal layer formed on a first main surface of an insulating film substrate;

[0263] a light emitting device coupled to the thin film device; and

[0264] The through via extends from the first portion in the metal layer to pass through the insulating film substrate and reach the second major surface. (12)

[0266] A display device, comprising:

[0267] Light emitting device; and

[0268] The display panel includes a display area that performs image display by using light from a light emitting device, wherein

[0269] The light emitting device comprises:

[0270] an insulating film substrate including a first main surface and a second main surface, the second main surface being located on a side opposite to the first main surface;

[0271] A thin film device including a metal layer formed on a first main surface of an insulating film substrate;

[0272] a light emitting device coupled to the thin film device; and

[0273] The through via extends from the first portion in the metal layer to pass through the insulating film substrate and reach the second major surface. (13)

[0275] A method for manufacturing an electronic device, comprising:

[0276] forming a thin film device including a metal layer on a first main surface of an insulating film substrate, the insulating film substrate including a first main surface and a second main surface, the second main surface being located on a side opposite to the first main surface;

[0277] forming a first through hole from the second main surface to the first portion in the metal layer by selectively removing a partial area of ​​the insulating film substrate; and

[0278] A through via is formed by filling the first through hole with a conductive material. (14)

[0280] The method of manufacturing an electronic device according to (13), further comprising: forming an additional metal layer on the first portion of the metal layer. (15)

[0282] The method for manufacturing an electronic device according to (13) or (14), further comprising:

[0283] forming a buffer layer between the first main surface of the insulating film substrate and the thin film device; and

[0284] A second through hole communicating with the first through hole is formed on the buffer layer. (16)

[0286] The method of manufacturing an electronic device according to (15), further comprising: performing laser irradiation to cause multiphoton absorption in both the insulating film substrate and the buffer layer to continuously form the first through hole and the second through hole.

[0287] This application claims the benefit of Japanese Priority Patent Application JP2022-091164 filed in the Japan Patent Office on Jun. 3, 2022, the entire contents of which are incorporated herein by reference.

[0288] It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.

Claims

1. An electronic device, comprising: an insulating film substrate including a first main surface and a second main surface, the second main surface being located on a side opposite to the first main surface; a thin film device comprising a metal layer formed on the first main surface of the insulating film substrate; as well as A through via extends from a first portion in the metal layer to pass through the insulating film substrate and reach at least the second major surface.

2. The electronic device according to claim 1, wherein: The thin film device further includes an additional metal layer selectively stacked in the first portion within the metal layer.

3. The electronic device according to claim 1, further comprising: A buffer layer is provided between the first main surface of the insulating film substrate and the thin film device.

4. The electronic device according to claim 3, wherein: The buffer layer includes an inorganic material.

5. The electronic device according to claim 1, wherein: The insulating film substrate includes an organic material.

6. The electronic device according to claim 5, wherein: The organic material is at least one of PI (polyimide), PET (polyethylene terephthalate), PC (polycarbonate), PEN (polyethylene naphthalate), and COP (cycloolefin polymer).

7. The electronic device according to claim 1, wherein: The insulating film substrate has flexibility.

8. The electronic device according to claim 1, wherein: The thin film device includes at least one of a wiring layer and a thin film transistor.

9. The electronic device according to claim 1, wherein: The thin film device comprises a thin film transistor, the thin film transistor comprises a gate electrode, a source electrode and a drain electrode, and The metal layer is formed in the same layer as the gate electrode, or is formed integrally with the source electrode or the drain electrode.

10. The electronic device according to claim 2, wherein: The additional metal layer comprises a plating layer.

11. A light emitting device, comprising: an insulating film substrate including a first main surface and a second main surface, the second main surface being located on a side opposite to the first main surface; a thin film device comprising a metal layer formed on the first main surface of the insulating film substrate; a light emitting device coupled to the thin film device; as well as A through via extends from a first portion in the metal layer to pass through the insulating film substrate and reach the second major surface.

12. A display device, comprising: Light-emitting device; as well as The display panel includes a display area that performs image display by using light from the light emitting device, wherein: The light emitting device comprises: an insulating film substrate including a first main surface and a second main surface, the second main surface being located on a side opposite to the first main surface; a thin film device comprising a metal layer formed on the first main surface of the insulating film substrate; a light emitting device coupled to the thin film device; and A through via extends from a first portion in the metal layer to pass through the insulating film substrate and reach the second major surface.

13. A method of manufacturing an electronic device, comprising: forming a thin film device including a metal layer on a first main surface of an insulating film substrate, the insulating film substrate including the first main surface and a second main surface, the second main surface being located on a side opposite to the first main surface; forming a first through hole from the second main surface to a first portion in the metal layer by selectively removing a partial area of ​​the insulating film substrate; and A through via is formed by filling the first through hole with a conductive material.

14. The method for manufacturing an electronic device according to claim 13, further comprising: An additional metal layer is formed on the first portion of the metal layer.

15. The method for manufacturing an electronic device according to claim 13, further comprising: forming a buffer layer between the first main surface of the insulating film substrate and the thin film device; as well as A second through hole communicating with the first through hole is formed on the buffer layer.

16. The method for manufacturing an electronic device according to claim 15, further comprising: Laser irradiation is performed to cause multiphoton absorption in both the insulating film substrate and the buffer layer to continuously form the first through hole and the second through hole.

Images