Antenna device

Abstract

An antenna device comprises a transparent substrate, an antenna electrode, a circuit structure and a wafer. The transparent substrate is provided with a first groove. The antenna electrode is filled in the first groove. The circuit structure is located on the transparent substrate and comprises a radio frequency signal input line. The wafer is bonded to the circuit structure and electrically connected to the RF signal input line.

Description

Technical Field

[0001] The invention relates to an antenna device. Background Art

[0002] With the development of communication technology, antenna devices are increasingly used. For example, televisions, radios, vehicles, mobile phones, etc. can all be equipped with antennas to receive and send various signals. Some antenna devices are integrated into printed circuit boards and formed by the electroplating process used in the manufacture of printed circuit boards. However, printed circuit boards are usually opaque and will block the user's view if they are installed on windows. Summary of the invention

[0003] The invention provides an antenna device, which improves the surface flatness of the antenna device by arranging an antenna electrode in a first groove of a transparent substrate.

[0004] At least one embodiment of the present invention provides an antenna device, which includes a transparent substrate, an antenna electrode, a circuit structure and a chip. The transparent substrate has a first groove. The antenna electrode is filled in the first groove. The circuit structure is located on the transparent substrate and includes a radio frequency signal input line. The chip is bonded to the circuit structure and electrically connected to the radio frequency signal input line. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1 is a cross-sectional schematic diagram of an antenna device according to an embodiment of the present invention.

[0006] FIG. 2A to FIG. 2E yes Figure 1 Schematic cross-sectional view of various stages of a method for manufacturing an antenna device.

[0007] Figure 3 is a cross-sectional schematic diagram of an antenna device according to an embodiment of the present invention.

[0008] Figure 4 is a cross-sectional schematic diagram of an antenna device according to an embodiment of the present invention.

[0009] Figure 5 is a top perspective view of an antenna device according to an embodiment of the present invention.

[0010] Figure 6 is a cross-sectional schematic diagram of an antenna device according to an embodiment of the present invention.

[0011] 7A to 7J yes Figure 6 Schematic cross-sectional view of various stages of a method for manufacturing an antenna device.

[0012] Figure 8 is a cross-sectional schematic diagram of an antenna device according to an embodiment of the present invention.

[0013] Fig. 9 is a cross-sectional schematic diagram of an antenna device according to an embodiment of the present invention.

[0014] Fig.10 is a cross-sectional schematic diagram of an antenna device according to an embodiment of the present invention.

[0015] Fig.11 is a cross-sectional schematic diagram of an antenna device according to an embodiment of the present invention.

[0016] The reference numerals are as follows:

[0017] 1A,1B,1C,1D,1E,1F,1G,1H: Antenna device

[0018] 10A: Antenna unit

[0019] 100:Transparent substrate

[0020] 102: First side

[0021] 104: Side 2

[0022] 105: First groove

[0023] 106: Second groove

[0024] 107: The third groove

[0025] 200: Antenna electrode

[0026] 301: first insulating layer

[0027] 301h,H1,H2:Open

[0028] 302: Second insulation layer

[0029] 304: Gate dielectric layer

[0030] 305: first dielectric layer

[0031] 306: second dielectric layer

[0032] 308: Insulation layer

[0033] 312: driving electrode

[0034] 314: Conductive ring

[0035] 322: Grounding Electrode

[0036] 324: Antenna signal line

[0037] 330: Semiconductor layer

[0038] 340: First circuit layer

[0039] 342: Gate

[0040] 350: Second circuit layer

[0041] 352: Source / Drain

[0042] 354: Digital signal line

[0043] 360: First redistribution layer

[0044] 362: Ground signal line

[0045] 364: Antenna signal line

[0046] 366: Shielding electrode

[0047] 368: Transmission Line

[0048] 370: Second redistribution layer

[0049] 372, 374, 376, 378: Chip pads

[0050] 379:Signal line

[0051] 410: Chip

[0052] 412: Conductive connection structure

[0053] 420: Bottom filling material

[0054] AG: Cavity

[0055] AH: Adhesive layer

[0056] AL: Active Component Layer

[0057] BL rewiring structure

[0058] CR: Carrier board

[0059] CS: Circuit Structure

[0060] D1,D2: Depth

[0061] DB: Release layer

[0062] T: Active Components

[0063] TR1: The first light transmission area

[0064] TR2: Second light transmission area

[0065] W1,W2,W3,W4,W5: Width DETAILED DESCRIPTION

[0066] Figure 1is a cross-sectional diagram of an antenna device 1A according to an embodiment of the present invention. Figure 1 The antenna device 1A includes a transparent substrate 100 , an antenna electrode 200 , a circuit structure CS and a chip 410 .

[0067] The transparent substrate 100 has a first surface 102 and a second surface 104 opposite to the first surface 102. The transparent substrate 100 has a first groove 105 recessed from the first surface 102 and a second groove 106 and a third groove 107 recessed from the second surface 104. In some embodiments, the depth of each of the first groove 105, the second groove 106 and the third groove 107 is greater than or equal to 3 μm and less than or equal to 5 μm. Figure 1 In the embodiment, the depth of the second groove 106 is equal to the depth of the third groove 107, but the present invention is not limited thereto. In other embodiments, the first groove 105, the second groove 106 and the third groove 107 may have different depths. In some embodiments, the thickness of the transparent substrate 100 is greater than or equal to 0.3 mm, preferably less than or equal to 0.7 mm.

[0068] In some embodiments, the transparent substrate 100 is made of glass, organic polymer or other applicable materials. Glass is, for example, Pyrex glass. Quartz (such as fused silica glass), soda-lime glass, aluminosilicate glass, borosilicate glass, aluminoborosilicate glass, or other suitable materials or combinations thereof.

[0069] The antenna electrode 200 is filled in the first groove 105. In this embodiment, the side (e.g., bottom side) of the antenna electrode 200 facing outward is substantially aligned with the first side 102 of the transparent substrate 100. In other words, the antenna electrode 200 fills the first groove 105. Through the design of the first groove 105, the flatness of the side surface of the antenna electrode 200 of the antenna device 1A can be improved, thereby improving the yield rate during packaging.

[0070] The circuit structure CS is located on the transparent substrate 100. In this embodiment, the circuit structure CS includes a driving electrode 312, a conductive ring 314, a first insulating layer 301, a ground electrode 322, a second insulating layer 302, an active device layer AL and a redistribution structure BL.

[0071] The driving electrode 312 and the conductive ring 314 are located on the transparent substrate 100 and are filled in the second groove 106 and the third groove 107, respectively. The driving electrode 312 is coupled to the antenna electrode 200. The conductive ring 314 surrounds the driving electrode 312 to reduce the interference of the external signal on the driving electrode 312. In this embodiment, the side (e.g., the top surface) of the driving electrode 312 and the conductive ring 314 facing outward is substantially aligned with the second surface 104 of the transparent substrate 100. In other words, the driving electrode 312 and the conductive ring 314 fill the second groove 106 and the third groove 107, respectively. Through the design of the second groove 106 and the third groove 107, the problem of unevenness of the film layer formed thereon due to the thickness of the driving electrode 312 and the conductive ring 314 can be avoided. Therefore, there is no need to form a very thick planarization layer on the driving electrode 312 and the conductive ring 314.

[0072] In some embodiments, the materials of the antenna electrode 200, the driving electrode 312, and the conductive ring 314 include copper (Cu), aluminum (Al), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), tungsten (W), conductive oxides (such as indium tin oxide, indium zinc oxide, etc.) or other suitable conductive materials or combinations of the above materials.

[0073] The first insulating layer 301 is located on the transparent substrate 100, the driving electrode 312 and the conductive ring 314. In some embodiments, the first insulating layer 301 includes an organic material (such as polyimide, epoxy resin, etc.) or an inorganic material (such as silicon nitride, silicon oxide, etc.) or a combination of the above materials. In this embodiment, since the driving electrode 312 and the conductive ring 314 are respectively filled in the second groove 106 and the third groove 107, the thickness of the first insulating layer 301 only needs to be 1 micron to 3 microns. However, in other embodiments, the second groove 106 and the third groove 107 are not provided on the transparent substrate 100, and the driving electrode 312 and the conductive ring 314 are directly formed on the second surface 104. Since the thickness of the driving electrode 312 and the conductive ring 314 is 1 micron to 10 microns. In order to achieve the effect of planarization, the thickness of the first insulating layer 301 is preferably 3 microns to 12 microns. In order to achieve this thickness to obtain the effect of planarization, the first insulating layer 301 is preferably selected from organic materials.

[0074] In some embodiments, the first insulating layer 301 has high transmittance and low dielectric loss (dissipation factor, Df). For example, the transmittance of the first insulating layer 301 for light with a wavelength of 400nm to 800nm ​​is greater than or equal to 90%. In some embodiments, the dielectric constant (dielectric constant, Dk) of the first insulating layer 301 is less than 4, and the dielectric loss is less than 0.004. In some embodiments, the first insulating layer 301 covers the driving electrode 312 for transmitting high-frequency radio frequency (RF) signals. The use of a first insulating layer 301 with a larger thickness and low dielectric loss is beneficial to reduce the loss of high-frequency signals.

[0075] The ground electrode 322 is located on the first insulating layer 301 and at least partially overlaps the antenna electrode 200 and the driving electrode 312. The ground electrode 322 has one or more openings overlapping the driving electrode 312, and one or more antenna signal lines 324 are located in the aforementioned openings. In this embodiment, the ground electrode 322 is electrically connected to the conductive ring 314 through one or more vias. Similarly, the antenna signal line 324 is electrically connected to the driving electrode 312 through one or more vias. The aforementioned vias pass through the first insulating layer 301.

[0076] In the present embodiment, the ground electrode 322 includes a mesh structure, thereby improving the penetration rate of the antenna device 1A.

[0077] In some embodiments, the materials of the ground electrode 322 and the antenna signal line 324 include copper (Cu), aluminum (Al), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), tungsten (W), conductive oxides (such as indium tin oxide, indium zinc oxide, etc.) or other suitable conductive materials or combinations of the above materials.

[0078] The second insulating layer 302 is located on the first insulating layer 301, the ground electrode 322 and the antenna signal line 324. In some embodiments, the second insulating layer 302 includes an organic material (e.g., polyimide, epoxy resin, etc.) or an inorganic material (e.g., silicon nitride, silicon oxide, etc.) or a combination of the above materials. In some embodiments, the thickness of the ground electrode 322 and the antenna signal line 324 is 5 microns to 10 microns. In order to achieve the effect of planarization, the thickness of the second insulating layer 302 is preferably 7 microns to 12 microns. In order to achieve this thickness to obtain the effect of planarization, the second insulating layer 302 is preferably made of organic material.

[0079] The active device layer AL is located on the second insulating layer 302. The active device layer AL includes a semiconductor layer 330, a gate dielectric layer 304, a first circuit layer 340, a first dielectric layer 305, a second circuit layer 350 and a second dielectric layer 306 formed in sequence. In some embodiments, the active device layer AL may further include more conductive layers and insulating layers. The first circuit layer 340 includes a gate 342, and the second circuit layer 350 includes a plurality of source / drain electrodes 352 and a digital signal line 354. The gate 342 of the first circuit layer 340, the plurality of source / drain electrodes 352 of the second circuit layer 350 and the semiconductor layer 330 cooperate with each other to form an active device (e.g., a thin film transistor) T. In some embodiments, part of the second circuit layer 350 is electrically connected to part of the first circuit layer 340, but the present invention is not limited thereto.

[0080] In some embodiments, the materials of the first circuit layer 340 and the second circuit layer 350 include copper (Cu), aluminum (Al), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), tungsten (W), conductive oxides (such as indium tin oxide, indium zinc oxide, etc.) or other suitable materials or combinations of the above materials. In some embodiments, the materials of the gate dielectric layer 304, the first dielectric layer 305 and the second dielectric layer 306 include organic polymers (such as polyimide, etc.) or inorganic materials (such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide, hafnium oxide or other suitable materials or combinations of the above materials).

[0081] The redistribution structure BL is located on the active device layer AL, and the active device layer AL, the first insulating layer 301, and the second insulating layer 302 are located between the redistribution structure BL and the second surface 104 of the transparent substrate 100. The redistribution structure BL includes a first redistribution layer 360, an insulating layer 308, and a second redistribution layer 370 formed in sequence. In some embodiments, the conductive via passes through at least one of the insulating layer 308, the active device layer AL, the first insulating layer 301, and the second insulating layer 302, and is used to electrically connect the first redistribution layer 360 and / or the second redistribution layer 370 to other conductive layers.

[0082] The first redistribution layer 360 includes an antenna signal line 364, a ground signal line 362, a shielding electrode 366, and a transmission line 368. The antenna signal line 364 is electrically connected to the antenna signal line 324. The ground signal line 362 is electrically connected to the ground electrode 322. In the present embodiment, the antenna signal line 364 and the ground signal line 362 both extend through the active device layer AL. Specifically, the conductive via of the antenna signal line 364 and the conductive via of the ground signal line 362 extend through the active device layer AL and the second insulating layer 302 to contact the antenna signal line 324 and the ground electrode 322, respectively.

[0083] The shielding electrode 366 shields the active device T to reduce interference of other signals on the active device T. In some embodiments, the shielding electrode 366 and the ground signal line 362 are both connected to the ground signal. The transmission line 368 is electrically connected to the active device T.

[0084] The second redistribution layer 370 includes chip pads 372, 374, 376, and 378. The chip pads 372, 374, and 378 are electrically connected to the ground signal line 362, the antenna signal line 364, and the transmission line 368, respectively. The chip pad 376 can also be called an RF signal input line, which is used to transmit the RF signal to the chip 410. In some embodiments, the second redistribution layer 370 optionally includes a signal line 379, and the signal line 379 is electrically connected to the digital signal line 354 in the active device layer AL. For example, the signal line 379 is electrically connected to the digital signal line 354 through the first redistribution layer 360. In some embodiments, the second redistribution layer 370 optionally includes a pad (not shown) for connecting to an external circuit board.

[0085] In some embodiments, the materials of the first redistribution layer 360 and the second redistribution layer 370 include copper (Cu), aluminum (Al), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), tungsten (W), conductive oxides (such as indium tin oxide, indium zinc oxide, etc.) or other suitable materials or combinations of the above materials. In this embodiment, the first redistribution layer 360 and the second redistribution layer 370 each include a seed layer and a metal layer formed thereon. The seed layer is formed by, for example, sputtering, chemical plating or other suitable methods, and the metal layer is formed by electroplating.

[0086] In some embodiments, the material of the insulating layer 308 includes polyimide or other suitable materials, and has high transmittance and low dielectric loss (dissipation factor, Df). For example, the transmittance of the insulating layer 308 for light with a wavelength of 400nm to 800nm ​​is greater than or equal to 90%. In some embodiments, the dielectric constant (dielectric constant, Dk) of the insulating layer 308 is less than 4, and the dielectric loss is less than 0.004.

[0087] In some embodiments, the active device layer AL includes various active devices T, which cooperate with each other to form a circuit. By setting the circuit in the active device layer AL, the circuit that needs to be set in the chip can be reduced, thereby reducing the size and cost of the chip. The rewiring structure BL and the driving electrode 312 are used to transmit high-frequency RF signals, so the insulating layer 308 in the rewiring structure BL and the first insulating layer 301 on the driving electrode 312 need to have a thicker thickness. Therefore, the thickness of the insulating layer 308 and the first insulating layer 301 is greater than the thickness of the gate dielectric layer 304, the first dielectric layer 305 and the second dielectric layer 306. In some embodiments, the thickness of the gate dielectric layer 304, the first dielectric layer 305 and the second dielectric layer 306 is 30 nanometers to 500 nanometers. In some embodiments, the thickness of the digital signal line 354 is less than the thickness of the RF signal input line (i.e., the chip pad 376).

[0088] The chip 410 is bonded to the chip pads 372, 374, 376, 378 in the redistribution structure BL. In some embodiments, the chip 410 is bonded to the chip pads 372, 374, 376, 378 through the conductive connection structure 412. The conductive connection structure 412 is, for example, solder, conductive glue or other suitable structures. In some embodiments, the bottom filling material 420 is located between the chip 410 and the redistribution structure BL, and surrounds the connection point between the chip 410 and the redistribution structure BL (i.e., the conductive connection structure 412). In some embodiments, the bottom filling material 420 may include a thermal interface material (TIM) to facilitate heat dissipation of the chip 410. For example, the thermal conductivity of the bottom filling material 420 is greater than 0.3 W / m K.

[0089] In some embodiments, the chip 410 includes a beamformer integrated circuit (BFIC) or other active / passive components. In some embodiments, the ground electrode 322 , the driving electrode 312 , and the active component T are electrically connected to the chip 410 .

[0090] In this embodiment, the antenna device 1A includes a plurality of antenna units 10A in an array. The antenna units 10A are arranged in an array to form an antenna array. Each antenna unit 10A includes a corresponding chip 410, an antenna electrode 200, a driving electrode 312, and a ground electrode 322. In some embodiments, there is a light-transmitting area between adjacent antenna units 10A. In some embodiments, the light-transmitting area does not contain any opaque metal structure. In some embodiments, the light-transmitting area optionally includes a conductive mesh structure through which light can penetrate (for example, a ground electrode 322 having a mesh structure or a ground electrode 322 composed of a transparent conductive material). In some embodiments, the width W2 of the ground electrode 322 is greater than or equal to the width W1 of the antenna electrode 200.

[0091] Based on the above, the flatness of the antenna device 1A can be improved by providing the grooves on the transparent substrate 100. In addition, the penetration rate of the antenna device 1A can be improved by the ground electrode 322 with a mesh structure.

[0092] FIG. 2A to FIG. 2E yes Figure 1 Schematic cross-sectional view of each stage of the manufacturing method of the antenna device 1A. Figure 2A , a first groove 105, a second groove 106 and a third groove 107 are formed in the transparent substrate 100. In some embodiments, the method of forming the first groove 105, the second groove 106 and the third groove 107 includes laser ablation, wet etching, dry etching, excimer laser ablation or other suitable methods or a combination of the above methods.

[0093] Please refer to Figure 2B The antenna electrode 200 is formed in the first groove 105. The driving electrode 312 and the conductive ring 314 are formed in the second groove 106 and the third groove 107 respectively.

[0094] For example, a seed material layer is first formed on the first surface 102 and the second surface 104 of the transparent substrate 100 by sputtering, chemical plating or other suitable processes. Then, a metal material layer is formed on the seed material layer by electroplating. Then, a removal process (such as etching, grinding, etc.) is used to remove the metal material and the seed material layer beyond the first groove 105, the second groove 106 and the third groove 107 to form the antenna electrode 200, the driving electrode 312 and the conductive ring 314.

[0095] In other embodiments, a patterned photoresist may be formed on the seed material layer on the first surface 102 and the second surface 104 before the electroplating process, so that the metal material layer can be formed only at the desired position by electroplating. In this case, the removal process only needs to remove the seed material layer on the first surface 102 and the second surface 104.

[0096] In other embodiments, chemical plating, physical vapor deposition (e.g., sputtering, thermal evaporation, electron beam evaporation, etc.), chemical vapor deposition, atomic layer deposition or other suitable methods or combinations of the above methods may be used to form the antenna electrode 200, the driving electrode 312 and the conductive ring 314. In other embodiments, the antenna electrode 200, the driving electrode 312 and the conductive ring 314 may include cured conductive glue, conductive ink or other similar materials, and may be formed by coating, printing (e.g., 3D printing, inkjet printing, screen printing, etc.) and other processes. In some embodiments, the conductive glue or conductive ink may include nano conductive particles, such as nano copper, nano silver, etc.

[0097] In some embodiments, when the method for forming the antenna electrode 200, the driving electrode 312, and the conductive ring 314 includes electroplating, the metal material formed by the electroplating and the seed layer thereunder will exceed the first groove 105, the second groove 106, and the third groove 107. Therefore, an additional removal process is required to remove the excess material. However, if the antenna electrode 200, the driving electrode 312, and the conductive ring 314 are formed by printing, the conductive material formed can be prevented from exceeding the first groove 105, the second groove 106, and the third groove 107. In this case, the above-mentioned removal process (such as etching, grinding, etc.) can be omitted.

[0098] Please refer to Figure 2C , forming a first insulating layer 301 on the second surface 104 of the transparent substrate 100. A plurality of openings are formed on the first insulating layer 301 by using an exposure and development process or a laser drilling process. Next, a ground electrode 322 and an antenna signal line 324 are formed on the first insulating layer 301 and in the opening of the first insulating layer 301, so that the ground electrode 322 and the antenna signal line 324 are electrically connected to the conductive ring 314 and the driving electrode 312 respectively.

[0099] Please refer to Figure 2D, forming the second insulating layer 302 on the first insulating layer 301. Then, forming the active device layer AL on the second insulating layer 302. In some embodiments, the method of forming the semiconductor layer 330, the gate dielectric layer 304, the first wiring layer 340, the first dielectric layer 305, the second wiring layer 350 and the second dielectric layer 306 in the active device layer AL includes physical vapor deposition, chemical vapor deposition, atomic layer deposition or other suitable process formation.

[0100] Please refer to Figure 2E , an exposure and development process and / or a laser drilling process are performed on the second insulating layer 302, the gate dielectric layer 304, the first dielectric layer 305, and the second dielectric layer 306 to form a plurality of openings in the second insulating layer 302, the gate dielectric layer 304, the first dielectric layer 305, and the second dielectric layer 306. In some embodiments, the second insulating layer 302, the gate dielectric layer 304, the first dielectric layer 305, and the second dielectric layer 306 may include a plurality of openings of different depths. For example, the depth of the opening in the second dielectric layer 306 for accommodating the transmission line 368 is less than the depth of the opening in the second insulating layer 302, the gate dielectric layer 304, the first dielectric layer 305, and the second dielectric layer 306 for accommodating the ground signal line 362 and the antenna signal line 364. In some embodiments, a shallower opening may be formed by performing an exposure and development process on the second dielectric layer 306 , while a deeper opening may be formed by performing a laser drilling process on the second insulating layer 302 , the gate dielectric layer 304 , the first dielectric layer 305 , and the second dielectric layer 306 .

[0101] Next, a first redistribution layer 360 is formed on the second dielectric layer 306. The first redistribution layer 360 includes a conductive via passing through the second dielectric layer 306 and a conductive via passing through the second insulating layer 302, the gate dielectric layer 304, the first dielectric layer 305, and the second dielectric layer 306. The first redistribution layer 360 includes an antenna signal line 364, a ground signal line 362, a shielding electrode 366, and a transmission line 368.

[0102] An insulating layer 308 is formed on the first redistribution layer 360 and the second dielectric layer 306. Then, an exposure and development process and / or a laser drilling process are performed on the insulating layer 308 to form a plurality of openings in the insulating layer 308.

[0103] A second redistribution layer 370 is formed on the insulating layer 308 and in the opening of the insulating layer 308 .

[0104] Finally, the chip 410 is bonded to the second redistribution layer 370, and a bottom filling material 420 is formed between the chip 410 and the insulating layer 308. Figure 1 shown.

[0105] The chip 410 is bonded to the chip pads 372 , 374 , 376 , and 378 by surface-mount technology (SMT).

[0106] In some embodiments, the surfaces of the chip pads 372, 374, 376, 378 may be treated with electroless nickel immersion gold (ENIG), immersion silver plating, etc., to improve the yield of the chip bonding process. In some embodiments, before the chip bonding process, an organic material such as an organic solderability preservative (OSP) may be formed on the chip pads 372, 374, 376, 378 to protect the metal pads from rusting (e.g., sulfurization or oxidation) due to contact with air, to improve the yield of the chip bonding process.

[0107] Figure 3 is a cross-sectional schematic diagram of an antenna device 1B according to an embodiment of the present invention. It must be noted here that: Figure 3 The implementation examples are used Figure 1 The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0108] Figure 3 The antenna device 1B and Figure 1 The difference between the antenna device 1A and the antenna device 1B is that the ground electrode 322 of the antenna device 1B is not a mesh structure. In the antenna device 1B, the ground electrode 322 is a whole piece, and has openings only at positions where signal lines (such as antenna signal lines 324) need to pass.

[0109] Figure 4 is a cross-sectional schematic diagram of an antenna device 1C according to an embodiment of the present invention. It must be noted here that: Figure 4 The implementation examples are used Figure 3 The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0110] exist Figure 3In the antenna device 1C, the ground electrode 322 and the conductive ring 314 include different materials. For example, the ground electrode 322 includes a transparent conductive oxide, and the conductive ring 314 includes a metal material. Since the ground electrode 322 includes a transparent conductive oxide, the transmittance of the antenna device 1C can be improved.

[0111] Figure 5 1 is a top perspective view of an antenna device 1A according to an embodiment of the present invention. It must be noted here that Figure 5 The implementation examples are used Figure 1 The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0112] Figure 5 The transparent substrate 100, the driving electrode 312, the conductive ring 314, the connection point between the antenna signal line 324 and the driving electrode 312, and the connection point between the ground electrode 322 and the conductive ring 314 of the antenna device 1A are shown, and other components are omitted. The driving electrode 312 and the conductive ring 314 are respectively filled in the second groove 106 and the third groove 107 of the transparent substrate 100. The conductive ring 314 surrounds the driving electrode 312.

[0113] In this embodiment, the driving electrode 312 is a rectangle, and the conductive ring 314 is a ring-shaped rectangle, but the present invention is not limited thereto. In other embodiments, the driving electrode 312 and the conductive ring 314 may have other geometric shapes.

[0114] In this embodiment, in the top view, the antenna electrode may have the same shape as the driving electrode 312, and the width W1 of the antenna electrode is approximately the same as the width W4 of the driving electrode 312, but the present invention is not limited thereto. In other embodiments, the width W1 is different from the width W4. In some embodiments, the antenna electrode and the driving electrode 312 have different shapes.

[0115] In this embodiment, in the top view, the ground electrode 322 is rectangular and can be Figure 1 As shown, it has a mesh structure or as Figure 4 The structure shown has a monolithic structure ( Figure 5 The portion of the ground electrode 322 above the first insulating layer 301 is not shown. The width W2 of the ground electrode 322 is approximately the same as the width W3 of the conductive ring 314, but the present invention is not limited thereto. In other embodiments, the width W2 is different from the width W3.

[0116] In this embodiment, there is a first light-transmitting region TR1 between adjacent antenna units 10A, and there is a second light-transmitting region TR2 between the driving electrode 312 and the conductive ring 314. In the embodiment where the ground electrode 322 has a mesh structure or is a transparent conductive material, even if the ground electrode 322 is located above the second light-transmitting region TR2, light can still pass through the ground electrode 322 above the second light-transmitting region TR2, so that the antenna device 1A has a higher transmittance.

[0117] In some embodiments, the active device layer AL (see Figure 1 ) may include multiple active components (such as Figure 1 By hiding the aforementioned circuit in the antenna electrode 200 (please refer to Figure 1 ) and above the driving electrode 312, the area of ​​the second light-transmitting region TR2 can be increased.

[0118] Figure 6 is a cross-sectional schematic diagram of an antenna device 1D according to an embodiment of the present invention. It must be noted here that: Figure 6 The implementation examples are used Figure 1 The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0119] Figure 6 The antenna device 1D and Figure 1 The difference between the antenna device 1A and the antenna device 1D is that the antenna device 1D further includes an adhesive layer AH and a cavity AG.

[0120] Please refer to Figure 6 The adhesive layer AH is located on the transparent substrate 100 and between the transparent substrate 100 and the first insulating layer 301 of the circuit structure CS. The adhesive layer AH is used to bond the circuit structure CS to the transparent substrate 100.

[0121] The cavity AG is located between the adhesive layer AH and the antenna electrode 200. The cavity AG is located on the second surface 104 of the transparent substrate 100. In this embodiment, the first groove 105 is located at the bottom of the cavity AG, wherein the width W5 of the cavity AG is greater than the width of the first groove 105 (ie, the width W1 of the antenna electrode 200).

[0122] In some embodiments, the depth D1 of the first groove 105 is greater than or equal to 3 μm and less than or equal to 5 μm. In some embodiments, the depth D2 of the cavity AG is greater than or equal to 100 μm and less than or equal to 400 μm.

[0123] In some embodiments, the material of the adhesive layer AH includes polypropylene (PP) or other suitable organic materials. In some embodiments, the cavity AG contains air or other gases.

[0124] In this embodiment, the ground electrode 322 has a mesh structure, but the present invention is not limited thereto. In other embodiments, the ground electrode 322 is a whole metal structure, such as Figure 8 In other embodiments, the ground electrode 322 includes a transparent conductive material, such as Fig. 9 Antenna device 1F.

[0125] 7A to 7J yes Figure 6 Schematic cross-sectional view of each stage of the manufacturing method of the antenna device 1D. Fig. 7A , a first groove 105 and a cavity AG are formed in the transparent substrate 100. In some embodiments, the method of forming the first groove 105 and the cavity AG includes using a laser drilling process with different energies to form grooves of different depths and shapes.

[0126] Please refer to Figure 7B , the antenna electrode 200 is formed in the first groove 105. In some embodiments, the antenna electrode 200 can be formed by coating, printing (such as 3D printing, inkjet printing, screen printing, etc.) and other processes. In some embodiments, the conductive glue or conductive ink contains nano conductive particles, such as nano copper, nano silver, etc.

[0127] Please refer to Figure 7C , a release layer DB is formed on the carrier board CR.

[0128] Please refer to Fig.7D , a driving electrode 312 and a conductive ring 314 are formed on the release layer DB.

[0129] Please refer to Fig. 7E , a first insulating layer 301 is formed on the driving electrode 312 , the conductive ring 314 and the release layer DB.

[0130] Please refer to Figure 7F , a plurality of openings 301h are formed in the first insulating layer 301. For example, the openings 301h are formed by using an exposure and development process or a laser drilling process.

[0131] Please refer to Figure 7G, a ground electrode 322 and an antenna signal line 324 are formed on the first insulating layer 301 and in the opening 301h of the first insulating layer 301. The ground electrode 322 and the antenna signal line 324 are electrically connected to the conductive ring 314 and the driving electrode 312 through the opening 301h. In this embodiment, the ground electrode 322 has a mesh structure, but the present invention is not limited thereto. In other embodiments, the ground electrode 322 has a monolithic structure, such as Figure 8 or Fig. 9 shown.

[0132] Please refer to Figure 7H A second insulating layer 302 is formed on the first insulating layer 301, the ground electrode 322 and the antenna signal line 324. An active device layer AL is formed on the second insulating layer 302.

[0133] An opening H2 is formed in the second dielectric layer 306 of the active device layer AL by using an exposure and development process. A plurality of openings H1 are formed through the active device layer AL and the second insulating layer 302 by using a laser drilling process. In this embodiment, the opening H2 is located on the source / drain 352 and the digital signal line 354, but the present invention is not limited thereto.

[0134] Please refer to Fig.7I , a first redistribution layer 360 is formed on the second dielectric layer 306 and in the openings H1 and H2. In some embodiments, when the digital signal line 354 also includes an opening H2, a portion of the first redistribution layer 360 is formed in the opening H2 to connect the digital signal line 354.

[0135] An insulating layer 308 is formed on the first redistribution layer 360. An opening is formed in the insulating layer 308 by using an exposure and development process and / or a laser drilling process.

[0136] A second redistribution layer 370 is formed on the insulating layer 308 and in the opening of the insulating layer 308 .

[0137] Please refer to Figure 7J , the chip 410 is bonded to the second redistribution layer 370 , and a bottom filling material 420 is formed between the chip 410 and the insulating layer 308 .

[0138] Finally, the release layer DB and the carrier CR are removed. For example, the release layer DB is irradiated with a laser to separate the carrier CR from the circuit structure CS.

[0139] The removed circuit structure CS is bonded to the Figure 7B The structure shown in the figure is used to obtain Figure 6 In some embodiments, the adhesive layer AH is first attached to the Figure 7B The transparent substrate 100 is then Figure 7J The circuit structure CS is adhered to the adhesive layer AH. In other embodiments, after the release layer DB and the carrier CR are removed, the adhesive layer AH is first attached to the bottom of the circuit structure CS, and then Figure 7B The transparent substrate 100 is shown attached to the adhesive layer AH.

[0140] In this embodiment, the chip 410 is first bonded to the circuit structure CS, and then the circuit structure CS is bonded to the transparent substrate 100, but the present invention is not limited thereto. In other embodiments, the circuit structure CS is first bonded to the transparent substrate 100, and then the chip 410 is bonded to the circuit structure CS.

[0141] Fig.10 is a cross-sectional schematic diagram of an antenna device 1G according to an embodiment of the present invention. It must be noted here that: Fig.10 The implementation examples are used Figure 6 The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0142] Fig.10 The antenna device 1G with Figure 6 The difference between the antenna device 1D and the antenna device 1G is that in the antenna device 1G, the first groove 105 and the cavity AG for accommodating the antenna electrode 200 are respectively located on opposite sides of the transparent substrate 100. Specifically, the first groove 105 is located on the first surface 102, and the cavity AG is located on the second surface 104. In this embodiment, a portion of the transparent substrate 100 is located between the cavity AG and the antenna electrode 200.

[0143] Fig.11 is a cross-sectional schematic diagram of an antenna device 1H according to an embodiment of the present invention. It must be noted here that: Fig.11 The implementation examples are used Fig.10 The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0144] Fig.11 The antenna device 1H and Fig.10 The difference between the antenna device 1G and the ground electrode 322 is that in the antenna device 1H, the ground electrode 322 is a whole piece, and only has an opening at a position where a signal line (such as an antenna signal line 324) needs to pass. In this embodiment, the material of the ground electrode 322 includes metal. In other embodiments, the ground electrode 322 includes a transparent conductive material.

[0145] In summary, the flatness of the antenna device can be improved by providing the grooves on the transparent substrate 100. In addition, the ground electrode 322 having a mesh structure or the ground electrode 322 made of a transparent conductive material can improve the penetration rate of the antenna device.

Claims

1. An antenna device, comprising: A transparent substrate having a first groove; an antenna electrode, filled in the first groove; A circuit structure, located on the transparent substrate, and comprising a radio frequency signal input line; as well as A chip is bonded to the circuit structure and electrically connected to the radio frequency signal input line.

2. The antenna device according to claim 1, further comprising: A chip, wherein the circuit structure comprises: an active component layer, comprising an active component and a digital signal line, wherein the thickness of the digital signal line is smaller than the thickness of the radio frequency signal input line; and A rewiring structure is located on the active component layer, and the chip is electrically connected to the rewiring structure, wherein the rewiring structure includes the radio frequency signal input line and an antenna signal line, and the antenna signal line extends through the active component layer.

3. The antenna device as claimed in claim 2, wherein the circuit structure comprises: a first insulating layer, located on the transparent substrate; a ground electrode, located on the first insulating layer, wherein the ground electrode at least partially overlaps the antenna electrode; as well as A second insulating layer is located on the first insulating layer and the ground electrode, and the active component layer is located on the second insulating layer.

4. The antenna device as claimed in claim 1, wherein the transparent substrate has a second groove, wherein the first groove and the second groove are respectively located on opposite sides of the transparent substrate, and wherein the circuit structure further comprises: A driving electrode is filled in the second groove and coupled to the antenna electrode.

5. The antenna device as claimed in claim 4, wherein the transparent substrate has a third groove, wherein the third groove surrounds the second groove, and wherein the circuit structure further comprises: A conductive ring is filled in the third groove, wherein the conductive ring surrounds the driving electrode; as well as A ground electrode at least partially overlaps the antenna electrode and is electrically connected to the conductive ring.

6. The antenna device as claimed in claim 1, wherein the circuit structure comprises: A ground electrode at least partially overlaps the antenna electrode, and the ground electrode comprises a mesh structure.

7. The antenna device as claimed in claim 1, wherein the circuit structure comprises: A ground electrode at least partially overlaps the antenna electrode, and the ground electrode comprises a transparent conductive material.

8. The antenna device as claimed in claim 1, wherein the circuit structure comprises: An adhesive layer is located between the transparent substrate and the circuit structure, wherein a cavity is included between the adhesive layer and the antenna electrode, wherein the width of the cavity is greater than the width of the antenna electrode. 9 . The antenna device as claimed in claim 8 , wherein the first groove is located at the bottom of the cavity. 10 . The antenna device as claimed in claim 8 , wherein the first groove and the cavity are located on opposite sides of the transparent substrate respectively.

11. The antenna device as claimed in claim 8, wherein the circuit structure comprises: a first insulating layer, located on the adhesive layer, and the adhesive layer is located between the first insulating layer and the transparent substrate; as well as A ground electrode is located on the first insulating layer, wherein the ground electrode at least partially overlaps the antenna electrode. 12 . The antenna device as claimed in claim 1 , wherein the active device layer comprises an active device overlapping the antenna electrode.

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