Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device, a preparation method thereof and a display device, and relates to the technical field of display. According to the preparation method of the photoelectric device, a first electrode, a photoelectric functional layer, a first carrier functional layer and a second electrode which are arranged in a stacked mode are included, and the material of the first carrier functional layer comprises nano particles containing OH <->. According to the photoelectric device provided by the invention, the carrier transmission performance of the first carrier function layer is good, and the luminous efficiency of the photoelectric device is good.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an optoelectronic device and a method for preparing the same, and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). OLEDs have become the mainstream technology in the field of display technology due to their excellent display performance, such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLEDs have the advantages of saturated color and adjustable wavelength of emitted light, and high quantum yield of photoluminescence and electroluminescence. In recent years, they have become a strong competitor to OLEDs. However, the luminous efficiency of existing optoelectronic devices is low and needs to be further improved. Summary of the invention

[0003] In view of this, the present application provides a photoelectric device, aiming to improve the problem of low luminous efficiency of existing photoelectric devices.

[0004] The embodiment of the present application is implemented as follows: a photoelectric device includes a first electrode, a photoelectric functional layer, a first carrier functional layer and a second electrode stacked in sequence, wherein the first carrier functional layer includes OH - of nanoparticles.

[0005] Optionally, in some embodiments of the present application, the - The nanoparticles are connected to the second electrode via chemical bonds.

[0006] Optionally, in some embodiments of the present application, the optoelectronic device further includes an adsorption layer, and the adsorption layer is arranged on a side of the second electrode away from the first carrier functional layer.

[0007] Optionally, in some embodiments of the present application, the material of the adsorption layer includes an amine compound, and the amine compound includes one or more of caprolactam, N,N′-di(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4-4′-diamine; and / or

[0008] The thickness of the adsorption layer is 30nm-60nm.

[0009] Optionally, in some embodiments of the present application, the photoelectric functional layer includes one or more of a second carrier functional layer and a light-emitting layer, the light-emitting layer is arranged between the first electrode and the first carrier functional layer, and the second carrier functional layer is arranged between the first electrode and the light-emitting layer;

[0010] The first carrier functional layer is an electron functional layer, and the second carrier functional layer is a hole functional layer, or the first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer.

[0011] Optionally, in some embodiments of the present application, the material of the second electrode includes metal, and the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; and / or

[0012] When the first carrier functional layer is an electronic functional layer, the nanoparticles include one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material, and an IB-IIIA-VIA semiconductor material. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor material includes In P, GaP, the IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS; when the first carrier functional layer is a hole functional layer, the nanoparticles include one or more of second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride; and / or

[0013] When the second carrier functional layer is an electronic functional layer, the material of the second carrier functional layer includes one or more of first doped metal oxide particles, first non-doped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, the material of the first non-doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, and the metal oxide in the first doped metal oxide particles includes ZnO, TiO2, SnO2, ZrO2, and Ta2O5. O2, ZrO2, Ta2O5, Al2O3, the doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, CdS, the IIIA-VA group semiconductor material includes one or more of InP, GaP, the IB-IIIA-VIA group semiconductor material includes one or more of CuInS, CuGaS;When the second carrier functional layer is a hole functional layer, the material of the second carrier functional layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped Phosphate-based green light-emitting materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy) )-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles , one or more of a second non-doped metal oxide particle, a metal sulfide, a metal selenide and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second non-doped metal oxide particle each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particle includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, the metal nitride includes P-type gallium nitride; and / or;

[0014] The material of the light-emitting layer includes 4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)], 4,4',4"-tris(carbazole-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium], diarylanthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF materials, polymers containing BN covalent bonds, HLCT materials, Exciplex luminescent materials, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, Cd ZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSe S, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs , GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, G aInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, CuInS2, CuInSe2, AgInS2, CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZ One or more of nSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, InP / ZnSe / ZnS, AMX3 and BMX3, where A is Cs+ ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of; B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n ≥ 2; and / or

[0015] The material of the first electrode includes one or more of metal, carbon material and metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode with a metal sandwiched between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2.

[0016] Optionally, in some embodiments of the present application, the thickness of the adsorption layer is 30nm to 60nm; and / or

[0017] The thickness of the second electrode is 15 nm to 100 nm; and / or

[0018] The thickness of the first carrier functional layer is 10 nm to 120 nm; and / or

[0019] The thickness of the light-emitting layer is 10 nm to 60 nm; and / or

[0020] The thickness of the first electrode is 10 nm to 100 nm; and / or

[0021] The thickness of the second carrier functional layer is 10 nm to 120 nm.

[0022] Accordingly, an embodiment of the present application further provides a method for preparing a photoelectric device, comprising:

[0023] Providing a photoelectric device preform, the photoelectric device preform comprising a first electrode, a light-emitting layer, a first carrier functional layer, a second electrode and an adsorption layer arranged in layers;

[0024] The photoelectric device preform is placed in a water-containing atmosphere containing water, taken out after a first preset time t, and annealed to obtain a photoelectric device.

[0025] Optionally, in some embodiments of the present application, the annealing temperature is 120° C. to 150° C.; and / or

[0026] The annealing time is 10 min to 60 min.

[0027] Optionally, in some embodiments of the present application, the relative humidity of the water-containing atmosphere is 30% to 70%.

[0028] Optionally, in some embodiments of the present application, the material of the adsorption layer includes an amine compound; and / or

[0029] The thickness of the adsorption layer is 30nm to 60nm; and / or

[0030] The material of the second electrode includes metal; and / or

[0031] The water-containing atmosphere further includes one or more of oxygen, nitrogen, helium, neon, argon, krypton, xenon, and radon; and / or

[0032] The annealing is performed in one or more atmospheres of nitrogen, helium, neon, argon, krypton, xenon, and radon; and / or

[0033] The first preset time t is 0.1h to 10h.

[0034] Optionally, in some embodiments of the present application, the amine compound includes one or more of caprolactam, N,N′-di(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4-4′-diamine; and / or

[0035] The metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; and / or

[0036] The first preset time t is 1 hour to 5 hours.

[0037] Optionally, in some embodiments of the present application, the first carrier functional layer is an electron functional layer or a hole functional layer;

[0038] When the first carrier functional layer is an electronic functional layer, the material of the first carrier functional layer includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, the material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, and the metal oxide in the first doped metal oxide particles includes ZnO, TiO2, SnO2, ZrO2, and Ta2O5. O2, ZrO2, Ta2O5, Al2O3, the doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, CdS, the IIIA-VA group semiconductor material includes one or more of InP, GaP, the IB-IIIA-VIA group semiconductor material includes one or more of CuInS, CuGaS;

[0039] When the first carrier functional layer is a hole functional layer, the material of the first carrier functional layer includes one or more of second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0040] Optionally, in some embodiments of the present application, the optoelectronic device preform further includes a second carrier functional layer, and the second carrier functional layer is arranged between the first electrode and the light-emitting layer;

[0041] The first carrier functional layer is an electron functional layer, and the second carrier functional layer is a hole functional layer, or the first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer.

[0042] Correspondingly, an embodiment of the present application further provides a display device, comprising the above-mentioned optoelectronic device, or comprising the optoelectronic device prepared by the above-mentioned preparation method.

[0043] The optoelectronic device provided in the present application has good carrier transport performance of the first carrier functional layer and good luminous efficiency of the optoelectronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0045] Figure 1 is a structural flow chart of an optoelectronic device provided in an embodiment of the present application;

[0046] Figure 2 is a schematic diagram of a method for preparing a photoelectric device provided in an embodiment of the present application;

[0047] Figure 3 is a schematic diagram of the energy band structure of the optoelectronic device provided in the embodiment of the present application;

[0048] Figure 4 is a curve diagram showing the variation of the maximum external quantum efficiency of the optoelectronic devices provided in Example 8 of the present application and the comparative example with the current density;

[0049] Figure 5 is a curve diagram showing the change of normalized brightness of the optoelectronic devices provided in Example 8 of the present application and the comparative example with the actual measurement time;

[0050] Figure 6 It is a curve diagram showing the change of voltage of the photoelectric device provided in Example 8 of the present application and the comparative example with the actual measurement time.

[0051] Reference numerals:

[0052] The first electrode 100 ; the hole injection layer 101 ; the hole transport layer 102 ; the light emitting layer 103 ; the electronic functional layer 104 ; the second electrode 105 ; and the adsorption layer 106 . DETAILED DESCRIPTION

[0053] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0054] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0055] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0056] In the present application, "at least one" means one or more, and "plurality" means two or more. "One or several", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0057] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0058] The technical solution of this application is as follows:

[0059] First, see Figure 1 The embodiment of the present application provides a photoelectric device, comprising a first electrode 100, a photoelectric functional layer, a first carrier functional layer and a second electrode 104 which are stacked in sequence, wherein the first carrier functional layer comprises OH - of nanoparticles.

[0060] It can be understood that the nanoparticles in the first carrier functional layer have vacancy defects, such as oxide nanoparticles containing oxygen vacancy defects, and OH- can fill the vacancy defects of the nanoparticles.

[0061] In the optoelectronic device provided by the present application, hydroxide ions can passivate the surface defects of nanoparticles, improve the carrier transmission capacity of the first carrier functional layer, thereby increasing the recombination rate of electrons and holes, reducing fluorescence quenching, and further improving the external quantum efficiency of the optoelectronic device and extending the service life of the optoelectronic device.

[0062] Furthermore, the OH - The nanoparticles are connected to the second electrode 104 via chemical bonds.

[0063] It should be noted that the second electrode 104 contains some metal ions, such as Ag. + etc., OH - Can be used with Ag + Connected by chemical bonds.

[0064] In some embodiments, the optoelectronic functional layer includes a light-emitting layer 103 , and the light-emitting layer 103 is disposed between the first electrode 100 and the first carrier functional layer.

[0065] In some embodiments, the optoelectronic device further includes an adsorption layer 106 , and the adsorption layer 106 is disposed on a side of the second electrode 105 away from the first carrier functional layer.

[0066] In some embodiments, the optoelectronic device further includes a second carrier functional layer, and the second carrier functional layer is disposed between the first electrode 100 and the light emitting layer 103 .

[0067] In some embodiments, the first carrier functional layer is an electron functional layer, and the second carrier functional layer is a hole functional layer.

[0068] In some other embodiments, the first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer.

[0069] In some embodiments, the material of the adsorption layer 106 is water-absorbent.

[0070] In some embodiments, the material of the adsorption layer 106 is light-transmissive.

[0071] In some embodiments, the material of the adsorption layer 106 has the property of adjusting the microcavity effect.

[0072] In some embodiments, the material of the adsorption layer 106 includes amine compounds.

[0073] In some embodiments, the amine compound includes one or more of caprolactam (CPL), N,N′-di(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4-4′-diamine (NPB).

[0074] In some embodiments, the material of the second electrode 105 includes metal, and the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg.

[0075] In some embodiments, when the first carrier functional layer is an electronic functional layer, the nanoparticles include first doped metal oxide particles, first undoped metal oxide particles, one or more of Group IIB-VIA semiconductor materials, Group IIIA-VA semiconductor materials, and Group IB-IIIA-VIA semiconductor materials, the material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, and the metal oxide in the first doped metal oxide particles includes ZnO, TiO2, SnO2, ZrO2, and Ta2O5. O2, ZrO2, Ta2O5, Al2O3, the doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS, the IIIA-VA group semiconductor materials include one or more of InP, GaP, the IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS.

[0076] In other embodiments, when the first carrier functional layer is a hole functional layer, the nanoparticles include one or more of second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0077] In some embodiments, when the second carrier functional layer is an electronic functional layer, the material of the second carrier functional layer includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials, and IB-IIIA-VIA semiconductor materials, the material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, and the metal oxide in the first doped metal oxide particles includes ZnO, TiO 2. One or more of SnO2, ZrO2, Ta2O5, and Al2O3, the doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga, the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS, the IIIA-VA group semiconductor materials include one or more of InP and GaP, and the IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS.

[0078] In some other embodiments, when the second carrier functional layer is a hole functional layer, the material of the second carrier functional layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'- Bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazolyl-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctyl)-1,4,5,8,9,12-hexaazatriphenylene] fluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl) diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene ], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfide, metal selenide and metal nitride, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0079] In some embodiments, the material of the light-emitting layer 103 includes one or more of an organic light-emitting material and a quantum dot light-emitting material.

[0080] The organic light-emitting material includes one or more of CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy)(4,4',4"-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium]), diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delay) materials, polymers containing BN covalent bonds, HLCT (hybridized localized charge transfer excited state) materials, and Exciplex (exciplex) light-emitting materials.

[0081] The quantum dot luminescent material includes one or more of single structure quantum dots, core-shell structure quantum dots and perovskite type semiconductor materials.

[0082] The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots can be respectively selected from but not limited to one or more of the group II-VI compounds, group IV-VI compounds, group III-V compounds and group I-III-VI compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound includes one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb. The I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2.

[0083] As an example, the core-shell structured quantum dots include one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0084] The perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor, or an organic-inorganic hybrid perovskite semiconductor. The inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2 + 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of the .

[0085] In some embodiments, the material of the first electrode 100 includes one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, and the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO; the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0086] In some embodiments, the thickness of the first electrode 100 is 10 nm to 100 nm, for example, 15 nm to 95 nm, 20 nm to 90 nm, 30 nm to 80 nm, 40 nm to 70 nm, 50 nm to 60 nm, etc.

[0087] In some embodiments, the thickness of the light emitting layer 103 is 10 nm to 60 nm, for example, 12 nm to 55 nm, 15 nm to 50 nm, 18 nm to 45 nm, 20 nm to 40 nm, 30 nm to 35 nm, etc.

[0088] In some embodiments, the thickness of the first carrier functional layer is 10 nm to 120 nm, for example, 20 nm to 110 nm, 30 nm to 100 nm, 40 nm to 90 nm, 50 nm to 80 nm, 60 nm to 70 nm, etc.

[0089] Further, when the first carrier functional layer is the electronic functional layer 104, the thickness of the electronic functional layer 104 is 15nm to 60nm, for example, 18nm to 58nm, 20nm to 55nm, 25nm to 50nm, 30nm to 45nm, 35nm to 40nm, etc.

[0090] When the first carrier functional layer is a hole functional layer, the thickness of the hole functional layer is 10nm to 120nm, for example, 20nm to 110nm, 30nm to 100nm, 40nm to 90nm, 50nm to 80nm, 60nm to 70nm, etc.

[0091] The hole injection layer 101 has a thickness of 10 nm to 100 nm, for example, 15 nm to 95 nm, 25 nm to 90 nm, 30 nm to 80 nm, 40 nm to 70 nm, 50 nm to 60 nm, etc.

[0092] The thickness of the hole transport layer 102 is 20 nm to 120 nm, for example, 30 nm to 110 nm, 40 nm to 100 nm, 50 nm to 95 nm, 60 nm to 90 nm, 70 nm to 80 nm, etc.

[0093] In some embodiments, the thickness of the second electrode 105 is 15 nm to 100 nm, for example, 20 nm to 95 nm, 25 nm to 90 nm, 30 nm to 80 nm, 40 nm to 70 nm, 50 nm to 60 nm, etc.

[0094] In some embodiments, the thickness of the adsorption layer 106 is 30 nm to 60 nm, for example, 32 nm to 58 nm, 35 nm to 55 nm, 38 nm to 52 nm, 40 nm to 50 nm, 45 nm to 48 nm, etc. Within the thickness range, the microcavity effect can be effectively adjusted.

[0095] The thickness of the second carrier functional layer may refer to the thickness of the first carrier functional layer, which will not be described in detail here.

[0096] Second, see Figure 2 The present application provides a method for preparing a photoelectric device, comprising:

[0097] S11, providing a photoelectric device preform, wherein the photoelectric device preform comprises a first electrode 100, a light-emitting layer 103, a first carrier functional layer, a second electrode 105 and an adsorption layer 106 which are stacked;

[0098] S12, placing the optoelectronic device preform in a water-containing atmosphere, wherein the water-containing atmosphere contains water, taking it out after a first preset time t, and annealing it to obtain a optoelectronic device.

[0099] It should be noted that the water in the aqueous atmosphere may exist in the form of water vapor. The optoelectronic device preform further includes a substrate, on which a side of the first electrode 100 away from the light-emitting layer 103 is disposed, and the adsorption layer 106 is disposed on the outermost layer of the optoelectronic device preform. In other words, a side of the adsorption layer 106 away from the first carrier functional layer is exposed to the aqueous atmosphere.

[0100] The preparation method of the optoelectronic device provided in the present application first places a optoelectronic device preform containing an adsorption layer in a water-containing atmosphere, so that the adsorption layer adsorbs water in the water-containing atmosphere, and the second electrode reacts with water to generate a metal base, and the metal base can release hydroxide ions after annealing. The hydroxide ions can act on the first carrier functional layer to passivate the surface defects of the first carrier functional layer and improve the carrier transmission capacity of the first carrier functional layer, thereby increasing the recombination rate of electrons and holes, reducing the fluorescence quenching phenomenon, and further improving the external quantum efficiency of the optoelectronic device and extending the service life of the optoelectronic device.

[0101] Specifically, the material of the first carrier functional layer includes nanoparticles, and the nanoparticles have vacancy defects, and hydroxide ions can fill the vacancy defects, thereby passivating the surface defects of the first carrier functional layer. Compared with directly using strong alkali treatment such as sodium hydroxide and potassium hydroxide, the method provided by the present application decomposes the metal base to release hydroxide ions, which is safer and will not cause corrosion to the photoelectric device and affect the luminous efficiency of the photoelectric device.

[0102] In the S11:

[0103] In some embodiments, the first carrier functional layer is an electron functional layer 104 or a hole functional layer. The electron functional layer 104 includes one or more of an electron injection layer or an electron transport layer. The hole functional layer includes one or more of a hole injection layer 101 and a hole transport layer 102.

[0104] Furthermore, when the first carrier functional layer is the electronic functional layer 104, the material of the first carrier functional layer includes one or more of first doped metal oxide particles, first non-doped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, the material of the first non-doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2 and Ta2O5, and the metal oxide in the first doped metal oxide particles includes ZnO, TiO 2. One or more of SnO2, ZrO2, Ta2O5, and Al2O3, the doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga, the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS, the IIIA-VA group semiconductor materials include one or more of InP and GaP, and the IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS.

[0105] In other embodiments, when the first carrier functional layer is a hole functional layer, the material of the first carrier functional layer includes one or more of second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0106] It can be understood that when the first carrier functional layer is a hole functional layer, the first electrode 100 is a cathode and the second electrode 105 is an anode; when the first carrier functional layer is an electron functional layer 104, the first electrode 100 is an anode and the second electrode 105 is a cathode.

[0107] In some embodiments, the preparation method of the adsorption layer 106 can adopt conventional techniques in the art, such as chemical methods or physical methods. Among them, the chemical method includes chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition, and coprecipitation. The physical method includes physical coating and solution method, among which the physical coating method includes: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; the solution method can be spin coating, printing, inkjet printing, blade coating, printing, dip-pull method, immersion method, spraying, roll coating, casting, slit coating, strip coating, etc.

[0108] In some embodiments, the optoelectronic device preform further includes a second carrier functional layer, and the second carrier functional layer is disposed between the first electrode 100 and the light emitting layer 103 .

[0109] In some embodiments, the second carrier functional layer is a hole functional layer or an electron functional layer 104 .

[0110] It can be understood that when the first carrier functional layer is a hole functional layer, the second carrier functional layer is a hole functional layer; when the first carrier functional layer is an electron functional layer 104 , the second carrier functional layer is an electron functional layer 104 .

[0111] In S12:

[0112] In some embodiments, the relative humidity of the water-containing atmosphere is 30% to 70%, for example, 32% to 68%, 35% to 66%, 40% to 65%, 45% to 60%, 50% to 55%, etc. Within the humidity range, the adsorption layer 106 is conducive to adsorbing water.

[0113] In some embodiments, the water-containing atmosphere further comprises one or more of oxygen, nitrogen, and inert gas, wherein the inert gas comprises one or more of helium, neon, argon, krypton, xenon, and radon.

[0114] It can be understood that when the aqueous atmosphere contains oxygen, the adsorption layer 106 will adsorb oxygen and water, so that the second electrode 105 reacts with oxygen and water to generate metal oxides and metal bases. Exemplarily, when the material of the second electrode 105 is Ag, the reaction equation is shown in formula (I):

[0115] 4Ag+2O2+H2O→Ag2O3+2AgOH (Ⅰ);

[0116] Among them, Ag2O3 can also be decomposed into Ag and O2, and Ag can be used as an electrode.

[0117] When the water-containing atmosphere contains nitrogen or an inert gas, the adsorption layer 106 adsorbs water, so that the second electrode 105 reacts with water to generate a metal base. For example, when the material of the second electrode 105 is Ag, the reaction equation is as shown in formula (II):

[0118] Ag+H2O→AgOH(Ⅱ).

[0119] In some embodiments, the first preset time t is 0.1h to 10h, for example, it can be 0.2h to 9h, 0.4h to 8h, 0.6h to 7h, 0.8h to 6h, etc.

[0120] Preferably, in some embodiments, the first preset time t is 1h to 5h, for example, 1.2h to 4.8h, 1.5h to 4.5h, 1.8h to 4.2h, 2h to 4h, 2.5h to 3.5h, etc. Within the time range, it is beneficial for the adsorption layer 106 in the photoelectric device preform to absorb water, so that the second electrode 105 is fully in contact with water for reaction.

[0121] In some embodiments, the annealing temperature is 120°C to 150°C, for example, 122°C to 148°C, 125°C to 145°C, 126°C to 142°C, 128°C to 140°C, 130°C to 145°C, etc. The annealing time is 10min to 60min, for example, 12min to 58min, 15min to 55min, 20min to 50min, 25min to 45min, 30min to 40min, etc. In this way, the metal base is decomposed to generate hydroxide ions.

[0122] It can be understood that when the aqueous atmosphere contains oxygen, the metal oxide and the metal base decompose to generate metal ions, oxygen and hydroxide ions. Exemplarily, when the material of the second electrode 105 is Ag, the reaction equation is as shown in formula (III):

[0123] Ag2O3+AgOH→Ag + +O2+OH - (III);

[0124] When the aqueous atmosphere contains nitrogen or an inert gas, the metal base decomposes to generate metal ions and hydroxide ions. For example, when the material of the second electrode 105 is Ag, the reaction equation is as shown in formula (IV):

[0125] AgOH→Ag + +OH - (Ⅳ).

[0126] See also Figure 3 Taking the first electrode 100 as an anode as an example, the second carrier functional layer includes a hole injection layer 101 and a hole transport layer 102, the first carrier functional layer is an electronic functional layer 104, and the second electrode 105 is a cathode. The hydroxide ions generated by the decomposition of the cathode can act on the electronic functional layer 104, passivate the defects of the electronic functional layer 104, thereby improving the electron transmission capacity, and then promoting the recombination of electrons and holes, reducing fluorescence quenching, improving the luminous efficiency of the photoelectric device, and extending the service life of the photoelectric device.

[0127] In some embodiments, the annealing is performed in a nitrogen or inert gas atmosphere, wherein the inert gas includes one or more of helium, neon, argon, krypton, xenon, and radon.

[0128] The materials and thicknesses of the first electrode 100 , the light-emitting layer 103 , the second carrier functional layer, the second electrode 105 , and the adsorption layer 106 are as described above and will not be described again herein.

[0129] In a third aspect, the present application also relates to a display device, which includes the optoelectronic device.

[0130] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0131] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0132] Example 1

[0133] This embodiment provides a photoelectric device, and the preparation method is as follows:

[0134] Place the ITO glass sheet in a glass dish filled with ethanol solution, clean the ITO or IZO surface with a cotton swab, then ultrasonicate with acetone, deionized water, and ethanol for 10 minutes each, blow dry with a nitrogen gun, place the cleaned ITO glass sheet in oxygen plasma for another 5 minutes, place in a vacuum dust-free oven, heat to 230°C, and bake for 30 minutes to obtain an anode;

[0135] The PEDOT:PSS solution was spin-coated on the cleaned ITO glass sheet at a spin-coating speed of 2300 r / min for 35 s. After spin-coating, the sheet was annealed in air at a temperature of 230°C for 30 min. After annealing, the sheet was quickly transferred to a glove box in a nitrogen atmosphere to obtain a 20 nm hole injection layer.

[0136] The hole injection layer was spin-coated with TFB solution at a speed of 2000 r / min for 40 s. After the spin coating, the layer was annealed in a nitrogen atmosphere at a temperature of 200° C. for 30 min to obtain a hole transport layer of 50 nm.

[0137] A quantum dot solution with CdSe as the core and ZnS as the shell was spin-coated on the hole transport layer at a spin-coating speed of 1600 r / min for 30 s. After spin-coating, the solution was annealed in a nitrogen atmosphere at a temperature of 100°C for 5 min to obtain a 40 nm light-emitting layer.

[0138] The ZnO solution was spin-coated on the light-emitting layer at a spin-coating speed of 3400 r / min and a spin-coating time of 40 s. After the spin-coating was completed, the solution was annealed in a nitrogen atmosphere at a temperature of 100° C. and an annealing time of 15 min to obtain a 30 nm electron transport layer.

[0139] The above device was transferred to a high vacuum evaporation device and-5 Under pa pressure, Ag was deposited at a rate of 1.5 to obtain a cathode of 20 nm; Caprolactam is deposited at a rate of 1.5 to obtain an adsorption layer of 50 nm, thereby obtaining a preform of a photoelectric device;

[0140] The photoelectric device preform was placed in an O2 and H2O atmosphere with a humidity of 30% for 5 hours, and then transferred to a pure nitrogen atmosphere for annealing at 150°C for 10 minutes;

[0141] The sample is packaged using packaging glue and a packaging cover plate, and a UV-curable resin is used to package the sample to obtain a photoelectric device.

[0142] Example 2

[0143] This embodiment is substantially the same as the embodiment 1, except that in this embodiment, the photoelectric device preform is placed in an O2 and H2O atmosphere with a humidity of 40% and left to stand for 4 hours.

[0144] Example 3

[0145] This embodiment is substantially the same as the embodiment 1, except that in this embodiment, the photoelectric device preform is placed in an O2 and H2O atmosphere with a humidity of 50% and left to stand for 3 hours.

[0146] Example 4

[0147] This embodiment is substantially the same as the embodiment 1, except that in this embodiment, the photoelectric device preform is placed in an O2 and H2O atmosphere with a humidity of 60% and left to stand for 2 hours.

[0148] Example 5

[0149] This embodiment is substantially the same as the embodiment 1, except that in this embodiment, the photoelectric device preform is placed in an O2 and H2O atmosphere with a humidity of 70% and left to stand for 1 hour.

[0150] Example 6

[0151] This embodiment is substantially the same as the embodiment 1, except that in this embodiment, the photoelectric device preform is placed in an N2 and H2O atmosphere with a humidity of 30% and left to stand for 5 hours.

[0152] Example 7

[0153] This embodiment is substantially the same as the embodiment 1, except that in this embodiment, the photoelectric device preform is placed in an N2 and H2O atmosphere with a humidity of 40% and left to stand for 4 hours.

[0154] Example 8

[0155] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, the photoelectric device preform is placed in an N2 and H2O atmosphere with a humidity of 50% and left to stand for 3 hours.

[0156] Example 9

[0157] This embodiment is substantially the same as the embodiment 1, except that in this embodiment, the photoelectric device preform is placed in an argon and H2O atmosphere with a humidity of 60% and left to stand for 2 hours.

[0158] Example 10

[0159] This embodiment is substantially the same as the embodiment 1, except that in this embodiment, the photoelectric device preform is placed in a helium and H2O atmosphere with a humidity of 70% for 1 hour.

[0160] Embodiment 11

[0161] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the environment is transferred to a pure nitrogen atmosphere and annealed at 120° C. for 10 min.

[0162] Example 12

[0163] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the environment is transferred to a pure nitrogen atmosphere and annealed at 135° C. for 10 min.

[0164] Example 13

[0165] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the environment is transferred to a pure nitrogen atmosphere and annealed at 120° C. for 30 min.

[0166] Embodiment 14

[0167] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the environment is transferred to a pure nitrogen atmosphere and annealed at 120° C. for 60 min.

[0168] Embodiment 15

[0169] This embodiment is substantially the same as Embodiment 1, except that the thickness of the adsorption layer in this embodiment is 30 nm.

[0170] Example 16

[0171] This embodiment is substantially the same as Embodiment 1, except that the thickness of the adsorption layer in this embodiment is 60 nm.

[0172] Embodiment 17

[0173] This embodiment is substantially the same as Embodiment 1, except that the material of the adsorption layer in this embodiment is N,N′-di(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4-4′-diamine.

[0174] Embodiment 18

[0175] This embodiment is basically the same as Embodiment 1, except that, in this embodiment, a cathode, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer and an anode are first prepared in sequence, and the materials of the hole injection layer and the hole transport layer are nickel oxide and zirconium oxide, and then an adsorption layer is arranged outside the anode to obtain a photoelectric device preform; then the photoelectric device preform is placed in an O2 and H2O atmosphere with a humidity of 30% for 5 hours, and transferred to a pure nitrogen atmosphere for annealing at 150°C for 10 minutes; and the photoelectric device is obtained after packaging.

[0176] Comparative Example

[0177] This comparative example is basically the same as Example 1, except that in this comparative example, the photoelectric device preform is not placed in an O2 and H2O atmosphere with a humidity of 30% for 5 hours and annealed at 150°C for 10 minutes, but is directly packaged to obtain a photoelectric device.

[0178] The maximum external quantum efficiency (EQE max ), T95@1000nit, the normalized brightness and voltage of the optoelectronic devices of Example 8 and the comparative example were tested over time to obtain the maximum external quantum efficiency and T95@1000nit. Referring to Table 1, the maximum external quantum efficiency curve of the optoelectronic devices of Example 8 and the comparative example is as shown in FIG. Figure 4 As shown, the normalized brightness variation curves of the photoelectric devices of Example 8 and the comparative example are shown in FIG. Figure 5 As shown, the curve of voltage changing with time is shown as Figure 6 shown.

[0179] The maximum external quantum efficiency is measured by controlling the QE PRO spectrometer, Keithley2400, and Keithley 6485 through LabView, and the driving current is 63.7 mA / cm 2 ;

[0180] The test method for lifespan T95@1000nit, normalized brightness and voltage changes over time is as follows: a 128-channel lifespan test system customized by Guangzhou New Vision Company is used for testing. The system architecture is a constant voltage and constant current source to drive QLED, and the change in voltage or current is tested. The photodiode detector and test system test the brightness (photocurrent) change of QLED. The brightness meter test calibrates the brightness (photocurrent) of QLED, and obtains the time it takes for the initial brightness of the light-emitting diode to decay to 95%, which is converted to the aging time at 1000nit.

[0181] Table 1

[0182]

[0183] From Table 1, we can see that:

[0184] It can be seen from Examples 1 to 10 and the comparative example that the maximum external quantum efficiency of the optoelectronic device can be improved and the service life of the optoelectronic device can be extended by annealing after standing in an O2 and H2O atmosphere, an N2 and H2O atmosphere, or an inert gas and H2O atmosphere; among them, the performance of the optoelectronic device standing in an N2 and H2O atmosphere or an inert gas and H2O atmosphere is better than that of the optoelectronic device standing in an O2 and H2O atmosphere;

[0185] It can be seen from Example 1 and Examples 11 to 14 that within the provided annealing time and temperature range, the longer the time and the higher the temperature, the higher the luminous efficiency and the longer the service life of the optoelectronic device, but both are higher than the maximum external quantum efficiency and service life of the optoelectronic device in the comparative example;

[0186] It can be seen from Example 1, Examples 15 to 17 and the comparative example that the thickness and material of the adsorption layer have no significant effect on the performance of the optoelectronic device, but are significantly higher than the maximum external quantum efficiency and service life of the optoelectronic device of the comparative example;

[0187] It can be seen from Example 1, Example 18 and the comparative example that whether the adsorption layer of adsorbed water is prepared outside the anode or outside the cathode, the recombination of holes and electrons can be promoted, the maximum external quantum efficiency of the photoelectric device can be improved, and the service life of the photoelectric device can be extended. There is no significant difference between the two.

[0188] Depend on Figure 4 It can be seen that the maximum external quantum efficiency of the optoelectronic device in Example 8 is significantly higher than that of the optoelectronic device in the comparative example, indicating that this solution effectively improves the luminous efficiency of the optoelectronic device.

[0189] Depend on Figure 5 It can be seen that the normalized brightness of the optoelectronic device of the comparative example decays to below 95% in less than 1 hour, while the normalized brightness of Example 8 is still higher than 95% after 3 hours, indicating that this solution can effectively extend the service life of the optoelectronic device.

[0190] Depend on Figure 6 It can be seen that during the operation of the photoelectric device, the lower the voltage, the better. At the same time, the voltage of the photoelectric device of Example 8 is significantly lower than that of the photoelectric device in the comparative example, indicating that the photoelectric device of this scheme has better photoelectric performance than the comparative example.

[0191] The optoelectronic devices and their preparation methods, and display devices provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technical personnel in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, characterized in that: The invention comprises a first electrode, a photoelectric functional layer, a first carrier functional layer and a second electrode which are sequentially stacked, wherein the first carrier functional layer comprises OH - of nanoparticles.

2. The optoelectronic device according to claim 1, characterized in that: The OH - The nanoparticles are connected to the second electrode via chemical bonds.

3. The optoelectronic device according to claim 1, characterized in that: The photoelectric device further comprises an adsorption layer, and the adsorption layer is arranged on a side of the second electrode away from the first carrier functional layer.

4. The optoelectronic device according to claim 3, characterized in that: The material of the adsorption layer includes an amine compound, and the amine compound includes one or more of caprolactam, N,N′-di(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4-4′-diamine; and / or The thickness of the adsorption layer is 30nm-60nm.

5. The optoelectronic device according to claim 1, characterized in that: The photoelectric functional layer includes one or more of a second carrier functional layer and a light-emitting layer, wherein the light-emitting layer is arranged between the first electrode and the first carrier functional layer, and the second carrier functional layer is arranged between the first electrode and the light-emitting layer; The first carrier functional layer is an electron functional layer, and the second carrier functional layer is a hole functional layer, or the first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer.

6. The optoelectronic device according to claim 5, characterized in that: The material of the second electrode includes metal, and the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; and / or When the first carrier functional layer is an electronic functional layer, the nanoparticles include one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material, and an IB-IIIA-VIA semiconductor material. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor material includes In P, GaP, the IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS; when the first carrier functional layer is a hole functional layer, the nanoparticles include one or more of second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride; and / or When the second carrier functional layer is an electronic functional layer, the material of the second carrier functional layer includes one or more of first doped metal oxide particles, first non-doped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, the material of the first non-doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, and the metal oxide in the first doped metal oxide particles includes ZnO, TiO2, SnO2, ZrO2, and Ta2O5. O2, ZrO2, Ta2O5, Al2O3, the doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, CdS, the IIIA-VA group semiconductor material includes one or more of InP, GaP, the IB-IIIA-VIA group semiconductor material includes one or more of CuInS, CuGaS;When the second carrier functional layer is a hole functional layer, the material of the second carrier functional layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped Phosphate-based green light-emitting materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy) )-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles , one or more of a second non-doped metal oxide particle, a metal sulfide, a metal selenide and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second non-doped metal oxide particle each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particle includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, the metal nitride includes P-type gallium nitride; and / or; The material of the light-emitting layer includes 4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)], 4,4',4"-tris(carbazole-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium], diarylanthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF materials, polymers containing BN covalent bonds, HLCT materials, Exciplex luminescent materials, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, Cd ZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSe S, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs , GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, G aInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, CuInS2, CuInSe2, AgInS2, CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZ One or more of nSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, InP / ZnSe / ZnS, AMX3 and BMX3, where A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of; B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n ≥ 2; and / or The material of the first electrode includes one or more of metal, carbon material and metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode with a metal sandwiched between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2.

7. The optoelectronic device according to claim 5, characterized in that: The thickness of the second electrode is 15 nm to 100 nm; and / or The thickness of the first carrier functional layer is 10 nm to 120 nm; and / or The thickness of the light-emitting layer is 10 nm to 60 nm; and / or The thickness of the first electrode is 10 nm to 100 nm; and / or The thickness of the second carrier functional layer is 10 nm to 120 nm.

8. A method for preparing a photoelectric device, characterized in that: include: Providing a photoelectric device preform, the photoelectric device preform comprising a first electrode, a light-emitting layer, a first carrier functional layer, a second electrode and an adsorption layer arranged in layers; The photoelectric device preform is placed in a water-containing atmosphere containing water, taken out after a first preset time t, and annealed to obtain a photoelectric device.

9. The preparation method according to claim 8, characterized in that: The annealing temperature is 120°C to 150°C; and / or The annealing time is 10 min to 60 min.

10. The preparation method according to claim 8, characterized in that: The relative humidity of the water-containing atmosphere is 30% to 70%.

11. The preparation method according to claim 8, characterized in that: The material of the adsorption layer includes an amine compound; and / or The thickness of the adsorption layer is 30nm to 60nm; and / or The material of the second electrode includes metal; and / or The water-containing atmosphere further includes one or more of oxygen, nitrogen, helium, neon, argon, krypton, xenon, and radon; and / or The annealing is performed in one or more atmospheres of nitrogen, helium, neon, argon, krypton, xenon, and radon; and / or The first preset time t is 0.1h to 10h.

12. The preparation method according to claim 11, characterized in that: The amine compound includes one or more of caprolactam, N,N′-di(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4-4′-diamine; and / or The metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; and / or The first preset time t is 1 hour to 5 hours.

13. The preparation method according to claim 8, characterized in that: The first carrier functional layer is an electron functional layer or a hole functional layer; When the first carrier functional layer is an electronic functional layer, the material of the first carrier functional layer includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, the material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, and the metal oxide in the first doped metal oxide particles includes ZnO, TiO2, SnO2, ZrO2, and Ta2O5. O2, ZrO2, Ta2O5, Al2O3, the doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, CdS, the IIIA-VA group semiconductor material includes one or more of InP, GaP, the IB-IIIA-VIA group semiconductor material includes one or more of CuInS, CuGaS; When the first carrier functional layer is a hole functional layer, the material of the first carrier functional layer includes one or more of second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

14. The preparation method according to claim 8, characterized in that: The photoelectric device preform further includes a second carrier functional layer, and the second carrier functional layer is arranged between the first electrode and the light-emitting layer; The first carrier functional layer is an electron functional layer, and the second carrier functional layer is a hole functional layer, or the first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer.

15. A display device, characterized in that: The invention comprises the optoelectronic device according to any one of claims 1 to 7, or comprises the optoelectronic device prepared by the preparation method according to any one of claims 8 to 14.

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