A method for preparing a photodetector array and a photodetector array

Abstract

The present application relates to the field of semiconductor technology. The present application provides a method for preparing a photodetector array and a photodetector array. The method comprises: providing Si / SiO 2 Substrate; In the Si / SiO 2 A photoresist film is formed on a substrate, and an array pattern is prepared for the photoresist film; 2 Platinum material or palladium material is deposited on a substrate by electron beam evaporation to obtain an arrayed platinum pattern or palladium pattern; the substrate having the arrayed platinum pattern or palladium pattern is placed in a chemical vapor deposition system, and an arrayed narrow bandgap two-dimensional material pattern is obtained by selenization or sulfurization treatment; photoresist is spin-coated on the arrayed narrow bandgap two-dimensional material pattern, so that a portion of the photoresist covers the two-dimensional material pattern and a portion of the photoresist covers the Si / SiO 2 Substrate; spin-coat a quasi-two-dimensional perovskite film to prepare a quasi-two-dimensional perovskite / two-dimensional material array.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and more specifically, to a method for preparing a photodetector array and a photodetector array. Background Art

[0002] In recent years, perovskite materials, as a new type of semiconductor material, have developed rapidly in the field of photodetectors due to their excellent optical and electrical properties. Quasi-two-dimensional perovskites can improve the instability problem that is difficult to solve in traditional three-dimensional perovskite materials, and have been widely studied by scholars. However, the introduction of insulating organic spacer cations in quasi-two-dimensional perovskite materials will lead to quantum confinement effects, which to a certain extent limit the separation of photogenerated carriers in the device. At the same time, the insulating organic spacer cations reduce the carrier mobility, hinder the effective transmission of photogenerated carriers, and result in low device efficiency.

[0003] To address this problem, the performance of the device can be effectively improved by introducing transport layer materials such as hole transport layers and electron transport layers and introducing low-dimensional materials with high carrier mobility. However, these methods are usually only applicable to unit devices and are not suitable for the preparation of array photodetectors. For example, there are the following problems: 1) Adding transport layer materials: The introduction of the transport layer will increase the defect probability of the upper and lower interfaces of the perovskite material, and the multi-step spin coating process increases the complexity of device preparation; 2) Introducing low-dimensional materials: Since the preparation method of low-dimensional materials is mostly mechanical stripping process, the size and dimensions of the materials are difficult to prepare on a large scale, and therefore they are not suitable for the preparation of array devices.

[0004] Therefore, one of the main problems facing quasi-two-dimensional perovskite photodetector arrays is to seek a material and method suitable for the preparation of detector arrays, reduce the interface defects of quasi-two-dimensional perovskite films, and improve the effective transmission of photogenerated carriers in quasi-two-dimensional perovskite materials. Summary of the invention

[0005] The present application provides a method for preparing a photodetector array and a photodetector array to solve at least one of the technical problems mentioned above, and the details are as follows.

[0006] Some embodiments of the present application provide a method for preparing a photodetector array, comprising:

[0007] Providing Si / SiO2 substrate;

[0008] Forming a photoresist film on the Si / SiO2 substrate, and performing array pattern preparation on the photoresist film;

[0009] Depositing platinum material or palladium material on the Si / SiO2 substrate of the arrayed pattern by electron beam evaporation to obtain an arrayed platinum pattern or palladium pattern;

[0010] The substrate having the arrayed platinum pattern or palladium pattern is placed in a chemical vapor deposition system, and an arrayed narrow bandgap two-dimensional material pattern is obtained by selenization or sulfurization treatment;

[0011] Spin-coating a photoresist on the arrayed narrow bandgap two-dimensional material pattern, so that a portion of the photoresist covers the two-dimensional material pattern and a portion of the photoresist covers the Si / SiO2 substrate;

[0012] Spin coating of quasi-two-dimensional perovskite films to prepare quasi-two-dimensional perovskite / two-dimensional material arrays.

[0013] In some embodiments, before the step of spin coating the quasi-two-dimensional perovskite film to prepare the quasi-two-dimensional perovskite / two-dimensional material array, the method further comprises:

[0014] The hydrophobic small molecules are evaporated in a vacuum oven to obtain an array patterned substrate with distinct hydrophilic and hydrophobic characteristics.

[0015] In some embodiments, after the step of spin coating the quasi-two-dimensional perovskite film to prepare the quasi-two-dimensional perovskite / two-dimensional material array, the method further comprises:

[0016] A hard mask is used and electron beam evaporation is used to evaporate gold as a metal electrode on the surface of the quasi-two-dimensional perovskite / two-dimensional material array to obtain a quasi-two-dimensional perovskite / two-dimensional material photodetector array.

[0017] In some embodiments, the narrow bandgap two-dimensional material pattern includes a platinum selenide pattern, a palladium selenide pattern, a platinum sulfide pattern, or a palladium sulfide pattern.

[0018] In some embodiments, the thickness of the Si / SiO2 substrate is 200nm-400nm.

[0019] In some embodiments, providing a Si / SiO2 substrate comprises:

[0020] Prepare a Si / SiO2 substrate, clean it with deionized water, ethanol, acetone and / or isopropanol, then blow dry the Si / SiO2 substrate with a nitrogen gun and dry it in a drying oven at 40°C-70°C for 1-3 hours.

[0021] In some embodiments, the step of preparing an arrayed pattern of the photoresist film includes:

[0022] Performing photolithography on the photoresist film to form an arrayed photolithography pattern;

[0023] The arrayed photolithography pattern is developed to form an arrayed pattern of a bare Si / SiO2 substrate.

[0024] The present application also provides a photodetector array prepared according to any one of the above methods, comprising:

[0025] Si / SiO2 substrate;

[0026] A narrow bandgap two-dimensional material array layer is arranged in an array on the surface of the Si / SiO2 substrate;

[0027] a two-dimensional perovskite material layer, at least partially covering the narrow bandgap two-dimensional material array layer;

[0028] The metal electrodes are respectively connected to the narrow bandgap two-dimensional material array layer and the two-dimensional perovskite material layer.

[0029] In some embodiments, the narrow bandgap two-dimensional material array layer includes: a platinum selenide array layer, a palladium selenide array layer, a platinum sulfide array layer or a palladium sulfide array layer.

[0030] In some embodiments, the thickness of the narrow bandgap two-dimensional material array layer is 10nm-100nm, and / or the thickness of the two-dimensional perovskite material layer is 10nm-100nm.

[0031] Compared with the related art, the above solution of the embodiment of the present application has at least the following beneficial effects:

[0032] This application proposes a method for preparing a photodetector array and a photodetector array, by introducing narrow-bandgap two-dimensional materials represented by platinum selenide and palladium selenide, which can be prepared in array by chemical vapor deposition, and using them as substrates to spin-coat a quasi-two-dimensional perovskite thin film array on its surface, and finally constructing a photodetector array. The excellent carrier transport properties of narrow-bandgap two-dimensional materials are utilized to promote the effective transport of photogenerated carriers of quasi-two-dimensional perovskite materials, thereby improving the performance of quasi-two-dimensional perovskite array photodetectors, and finally realizing a high-performance photodetector array based on quasi-two-dimensional perovskite / two-dimensional materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The drawings herein are incorporated into the specification and constitute a part of the specification, showing embodiments consistent with the present application, and together with the specification, are used to explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0034] Figure 1 A flow chart of a method for preparing a photodetector array provided in some embodiments of the present application;

[0035] Figure 2 A schematic diagram of a narrow bandgap two-dimensional material pattern structure in a photodetector array provided in some embodiments of the present application;

[0036] Figure 3 A schematic diagram of the structure of a narrow bandgap two-dimensional material pattern in a photodetector array after spin coating of photoresist provided in some embodiments of the present application;

[0037] Figure 4 A schematic diagram of a photodetector array provided in some embodiments of the present application after being treated by evaporating hydrophobic small molecules in a vacuum oven;

[0038] Figure 5 A schematic diagram of the structure of a photodetector array provided in some embodiments of the present application after spin coating with quasi-two-dimensional perovskite;

[0039] Figure 6 A schematic diagram of the structure of a photodetector array after metal electrodes are evaporated provided in some embodiments of the present application.

[0040] Figure 7 A schematic diagram of the cross-sectional structure of a photodetector array provided in some embodiments of the present application.

[0041] Description of reference numerals:

[0042] Si / SiO2 substrate 10, narrow bandgap two-dimensional material pattern 11, photoresist 12, hydrophobic region 13, two-dimensional perovskite film 14, metal electrode 15, narrow bandgap two-dimensional material array layer 20, two-dimensional perovskite material layer 30. DETAILED DESCRIPTION

[0043] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0044] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings, and "multiple" generally includes at least two.

[0045] It should be understood that the term "and / or" used in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0046] It should be understood that although the terms first, second, third, etc. may be used to describe in the embodiments of the present application, these should not be limited to these terms. These terms are only used to distinguish. For example, without departing from the scope of the embodiments of the present application, the first may also be referred to as the second, and similarly, the second may also be referred to as the first.

[0047] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a product or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such product or device. In the absence of more restrictions, the elements defined by the sentence "comprises a" do not exclude the presence of other identical elements in the product or device including the elements.

[0048] The present application is described in detail below with reference to the accompanying drawings.

[0049] like Figure 1 As shown, the embodiment of the present application provides a method for preparing a photodetector array, comprising the following method steps:

[0050] Step S102: providing a Si / SiO2 substrate;

[0051] Step S104: forming a photoresist film on the Si / SiO2 substrate, and performing array pattern preparation on the photoresist film;

[0052] Step S106: depositing platinum material or palladium material on the Si / SiO2 substrate of the arrayed pattern by electron beam evaporation to obtain an arrayed platinum pattern or palladium pattern;

[0053] Step S108: placing the substrate with the arrayed platinum pattern or palladium pattern into a chemical vapor deposition system, and obtaining an arrayed narrow bandgap two-dimensional material pattern by selenization or sulfidation treatment;

[0054] Step S110: Spin-coating a photoresist on the arrayed narrow bandgap two-dimensional material pattern, so that a portion of the photoresist covers the two-dimensional material pattern and a portion of the photoresist covers the Si / SiO2 substrate;

[0055] Step S112: spin coating a quasi-two-dimensional perovskite film to prepare a quasi-two-dimensional perovskite / two-dimensional material array.

[0056] The present application proposes a method for preparing a photodetector array, by introducing a narrow bandgap two-dimensional material that can be prepared in an array by chemical vapor deposition, and using it as a substrate to spin-coat a quasi-two-dimensional perovskite thin film array on its surface, and finally obtaining a photodetector array. Among them, narrow bandgap two-dimensional materials generally refer to two-dimensional materials with a bandgap of less than 1 electron volt. The excellent carrier transport properties of narrow-band two-dimensional materials are used to promote the effective transport of photogenerated carriers of quasi-two-dimensional perovskite materials, thereby improving the performance of quasi-two-dimensional perovskite array photodetectors, and finally realizing a high-performance photodetector array based on quasi-two-dimensional perovskite / two-dimensional materials.

[0057] In some embodiments, in step S102, the thickness of the Si / SiO2 substrate 10 is 200nm-400nm, for example, optionally 250nm, 300nm, 350nm, 400nm, etc., so that the Si / SiO2 substrate 10 is as thin as possible to make the volume of the photodetector array as small as possible.

[0058] In some embodiments, providing the Si / SiO2 substrate 10 specifically includes: preparing the Si / SiO2 substrate 10, cleaning the surface of the Si / SiO2 substrate 10 with at least one cleaning solution selected from deionized water, ethanol, acetone and / or isopropanol, and then drying the Si / SiO2 substrate with a nitrogen gun at a preset air pressure, and drying it in a drying oven at 40°C-70°C for 1-3 hours to fully keep the Si / SiO2 substrate 10 dry and clean, thereby providing a clean and impurity-free Si / SiO2 substrate 10 to facilitate the implementation of subsequent processes.

[0059] In some embodiments, in step S104, photoresist is spin-coated on the Si / SiO2 substrate 10 to form a photoresist film so that it covers the Si / SiO2 substrate 10, and a mask with a preliminary pattern is set for the photoresist film, for example, a matrix mask is formed according to a preset size, and then the photoresist film is subjected to processes such as photolithography and development to prepare an arrayed pattern, exposing the matrix Si / SiO2 substrate 10, thereby forming a Si / SiO2 substrate with an arrayed pattern.

[0060] In some embodiments, in step S106, platinum material or palladium material is deposited on the Si / SiO2 substrate 10 of the arrayed pattern by electron beam evaporation, so that the platinum material or palladium material is deposited in the arrayed pattern, and the photoresist on the Si / SiO2 substrate 10 is stripped through a stripping process, so that the arrayed pattern of platinum material or palladium material remains on the Si / SiO2 substrate 10, thereby preparing an arrayed platinum pattern or palladium pattern on the Si / SiO2 substrate 10.

[0061] In some embodiments, in step S108, Figure 2 As shown, the substrate with an arrayed platinum pattern or palladium pattern obtained in the above step S106 is placed in a chemical vapor deposition system, and treated by selenization or sulfidation, so that the platinum material or palladium material is selenized or sulfided to obtain an arrayed narrow bandgap two-dimensional material pattern 11, and the narrow bandgap two-dimensional material pattern includes at least one of a platinum selenide pattern, a palladium selenide pattern, a platinum sulfide pattern or a palladium sulfide pattern. At this point, a matrix-arranged platinum selenide pattern, a palladium selenide pattern, a platinum sulfide pattern or a palladium sulfide pattern is formed on the Si / SiO2 substrate 10.

[0062] In some embodiments, in step S110, Figure 3 As shown, a photoresist 12 is spin-coated on an arrayed narrow bandgap two-dimensional material pattern 11, so that a portion of the photoresist 12 covers the narrow bandgap two-dimensional material pattern 11 and a portion of the photoresist 12 covers the Si / SiO2 substrate 10, wherein the area covering the narrow bandgap two-dimensional material pattern 11 is larger than the area covering the Si / SiO2 substrate 10, for example, the covering ratio is between 1.3-2.5, so as to facilitate hydrophobic treatment, thereby facilitating the formation of a stable heterojunction structure.

[0063] In some embodiments, Figure 4 As shown, after step S110, step S111 may be further included: in order to prepare an arrayed quasi-two-dimensional perovskite array structure by spin coating and enhance its bonding force, the array pattern obtained in the above step S110 is subjected to a hydrophobic treatment, and a hydrophobic small molecule, such as octadecyltrichlorosilane (OTS), is evaporated in a vacuum oven, and the photoresist with OTS is removed through a stripping process to prepare an array patterned substrate with distinct hydrophilicity and hydrophobicity, such as Figure 4 As shown, part of the Si / SiO2 substrate 10 and part of the narrow-bandgap two-dimensional material pattern 11 blocked by the photoresist 12 form a hydrophilic area due to the lack of evaporation of hydrophobic small molecules, and part of the Si / SiO2 substrate 10 and part of the exposed narrow-bandgap two-dimensional material pattern 11 that are not blocked by the photoresist 12 form a hydrophobic area 13 due to the evaporation of hydrophobic small molecules. This hydrophobic treatment step can enhance the binding force of the spin-coated quasi-two-dimensional perovskite.

[0064] In some embodiments, in step S112, a quasi-two-dimensional perovskite (such as (C4H9NH3)2PbI4) film 14 is spin-coated to form it in the above-mentioned hydrophilic area, partially covering the matrix-arranged platinum selenide pattern, palladium selenide pattern, platinum sulfide pattern or palladium sulfide pattern, thereby preparing a quasi-two-dimensional perovskite / two-dimensional material array.

[0065] In some embodiments, Figure 6As shown, after step S112, step S113 is also included: a hard mask is used and electron beam evaporation is used to evaporate gold or other good conductors as metal electrodes 15 on the surface of the quasi-two-dimensional perovskite / two-dimensional material array to obtain a quasi-two-dimensional perovskite / two-dimensional material photodetector array.

[0066] The present application also provides a photodetector array prepared according to any of the above methods, such as Figure 7 As shown, this is an interface diagram of a single device. The photodetector array includes:

[0067] Si / SiO2 substrate 10;

[0068] A narrow bandgap two-dimensional material array layer 20 is arranged in an array on the surface of the Si / SiO2 substrate 10;

[0069] A two-dimensional perovskite material layer 30 at least partially covers the narrow bandgap two-dimensional material array layer 20;

[0070] The metal electrodes 15 are respectively connected to the narrow bandgap two-dimensional material array layer 20 and the two-dimensional perovskite material layer 30 .

[0071] In some embodiments, the narrow bandgap two-dimensional material array layer 20 includes: a platinum selenide array layer, a palladium selenide array layer, a platinum sulfide array layer or a palladium sulfide array layer.

[0072] In some embodiments, the thickness of the narrow bandgap two-dimensional material array layer 20 is 10 nm-100 nm, and / or the thickness of the two-dimensional perovskite material layer is 10 nm-100 nm.

[0073] This application proposes a method for preparing a photodetector array and a photodetector array, by introducing narrow-bandgap two-dimensional materials represented by platinum selenide and palladium selenide, which can be prepared in array by chemical vapor deposition, and using them as substrates to spin-coat a quasi-two-dimensional perovskite thin film array on its surface, and finally constructing a photodetector array. The excellent carrier transport properties of narrow-bandgap two-dimensional materials are utilized to promote the effective transport of photogenerated carriers of quasi-two-dimensional perovskite materials, thereby improving the performance of quasi-two-dimensional perovskite array photodetectors, and finally realizing a high-performance photodetector array based on quasi-two-dimensional perovskite / two-dimensional materials.

[0074] Narrow-bandgap two-dimensional materials represented by platinum selenide, palladium selenide, platinum sulfide, palladium sulfide, etc. can be prefabricated with a metal array substrate by means of photolithography-assisted means, formed on a Si / SiO2 substrate, and prepared using a chemical vapor deposition selenization / sulfurization method, thereby avoiding the disadvantages of materials such as graphene, black phosphorus, and molybdenum sulfide that are difficult to prepare in batches and in arrays. Graphene, black phosphorus, molybdenum sulfide, etc. can usually only form a whole layer structure by growth, and are not easy to form an array structure. Moreover, graphene, black phosphorus, molybdenum sulfide, etc. cannot usually be grown directly on a Si / SiO2 substrate, and a substrate transfer is required to form them on a Si / SiO2 substrate. Therefore, the narrow-bandgap two-dimensional materials represented by platinum selenide, palladium selenide, platinum sulfide, palladium sulfide, etc. in this application provide an effective preparation method for realizing a quasi-two-dimensional perovskite / two-dimensional material photodetector array.

[0075] Arrayed two-dimensional materials can not only improve the carrier transport efficiency of quasi-two-dimensional perovskite materials, but also avoid the interface defects caused by the interface of quasi-two-dimensional perovskite materials during the preparation of hole transport layer and electron transport layer materials, providing an effective method for improving the performance of quasi-two-dimensional perovskite photodetector arrays. Example 1

[0076] A P-type highly doped silicon wafer with 300 nm thick SiO2 was provided, and was cleaned with deionized water, ethanol, acetone, and isopropanol, respectively. The silicon wafer was then blown dry with a nitrogen gun and dried in a drying oven at 60° C. for two hours.

[0077] A photoresist film is spin-coated on a Si / SiO2 substrate, and an array pattern is prepared on the photoresist through processes such as photolithography and development. A platinum film is deposited by electron beam evaporation, and an arrayed platinum pattern is prepared on the Si / SiO2 substrate through a stripping process.

[0078] The substrate with patterned platinum is placed in a chemical vapor deposition system, and an array-patterned platinum selenide substrate is obtained by selenization.

[0079] A photoresist is spin-coated on a patterned platinum selenide substrate, and an array pattern is prepared through processes such as photolithography and development, wherein a portion of the photoresist covers the platinum selenide and a portion covers the Si / SiO2 substrate.

[0080] Hydrophobic small molecules (OTS) are evaporated in a vacuum oven, and the photoresist containing OTS is removed through a stripping process to prepare an array patterned substrate with distinct hydrophilic and hydrophobic properties.

[0081] A quasi-two-dimensional perovskite film was spin-coated to construct a quasi-two-dimensional perovskite / platinum selenide material array. A hard mask was used and electron beam evaporation was used to evaporate gold on the material surface as a metal electrode to prepare a quasi-two-dimensional perovskite / platinum selenide photodetector array.

[0082] Embodiment 2:

[0083] A P-type highly doped silicon wafer with 200 nm thick SiO2 was prepared, cleaned with deionized water, ethanol, acetone, and isopropanol, respectively, and then blown dry with a nitrogen gun and dried in a drying oven at 50°C for 1.5 hours.

[0084] A photoresist film is spin-coated on a Si / SiO2 substrate, and an array pattern is prepared on the photoresist through processes such as photolithography and development. A palladium film is deposited by electron beam evaporation, and an arrayed palladium pattern is prepared on the Si / SiO2 substrate through a stripping process.

[0085] The substrate with patterned palladium is placed in a chemical vapor deposition system, and an array-patterned palladium selenide substrate is obtained by selenization.

[0086] A photoresist is spin-coated on a patterned palladium selenide substrate, and an array pattern is prepared through processes such as photolithography and development, wherein a portion of the photoresist covers the palladium selenide and a portion covers the Si / SiO2 substrate.

[0087] Hydrophobic small molecules (OTS) are evaporated in a vacuum oven, and the photoresist containing OTS is removed through a stripping process to prepare an array patterned substrate with distinct hydrophilic and hydrophobic properties.

[0088] A quasi-two-dimensional perovskite film was spin-coated to construct a quasi-two-dimensional perovskite / palladium selenide material array. A hard mask was used and electron beam evaporation was used to evaporate gold on the material surface as a metal electrode to prepare a quasi-two-dimensional perovskite / palladium selenide photodetector array.

[0089] Embodiment 3:

[0090] Prepare a P-type highly doped silicon wafer with 400 nm thick SiO2, clean it with deionized water, ethanol, acetone, and isopropanol, blow dry it with a nitrogen gun, and dry it in a drying oven at 70°C for 3 hours;

[0091] A photoresist film is spin-coated on a Si / SiO2 substrate, and an array pattern is prepared on the photoresist through processes such as photolithography and development. A platinum film is deposited by electron beam evaporation, and an arrayed platinum pattern is prepared on the Si / SiO2 substrate through a stripping process.

[0092] The patterned platinum substrate is placed in a chemical vapor deposition system to obtain an arrayed platinum sulfide substrate through a sulfurization method.

[0093] A photoresist is spin-coated on a patterned platinum sulfide substrate, and an array pattern is prepared through processes such as photolithography and development, wherein a portion of the photoresist covers the platinum sulfide and a portion covers the Si / SiO2 substrate.

[0094] Hydrophobic small molecules (OTS) are evaporated in a vacuum oven, and the photoresist containing OTS is removed through a stripping process to prepare an array patterned substrate with distinct hydrophilic and hydrophobic properties.

[0095] A quasi-two-dimensional perovskite film was spin-coated to construct a quasi-two-dimensional perovskite / platinum sulfide material array. A hard mask was used and electron beam evaporation was used to evaporate gold on the material surface as a metal electrode to prepare a quasi-two-dimensional perovskite / platinum sulfide photodetector array.

[0096] Embodiment 4:

[0097] A P-type highly doped silicon wafer with 300 nm thick SiO2 was prepared, cleaned with deionized water, ethanol, acetone, and isopropanol, respectively, and then dried with a nitrogen gun and placed in a drying oven at 60°C for two hours.

[0098] A photoresist film is spin-coated on a Si / SiO2 substrate, and an array pattern is prepared on the photoresist through processes such as photolithography and development. A palladium film is deposited by electron beam evaporation, and an arrayed palladium pattern is prepared on the Si / SiO2 substrate through a stripping process.

[0099] The substrate with patterned palladium is placed in a chemical vapor deposition system, and an array-patterned palladium sulfide substrate is obtained by a sulfidation method.

[0100] A photoresist is spin-coated on a patterned palladium sulfide substrate, and an array pattern is prepared through processes such as photolithography and development, wherein a portion of the photoresist covers the palladium sulfide and a portion covers the Si / SiO2 substrate.

[0101] Hydrophobic small molecules (OTS) are evaporated in a vacuum oven, and the photoresist containing OTS is removed through a stripping process to prepare an array patterned substrate with distinct hydrophilic and hydrophobic properties.

[0102] A quasi-two-dimensional perovskite film was spin-coated to construct a quasi-two-dimensional perovskite / palladium sulfide material array. A hard mask was used and electron beam evaporation was used to evaporate gold on the material surface as a metal electrode to prepare a quasi-two-dimensional perovskite / palladium sulfide photodetector array.

[0103] Finally, it should be noted that: each embodiment in this specification is described by way of example, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other. For the system or device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0104] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for preparing a photodetector array, characterized in that ,include: Providing Si / SiO2 substrate; A photoresist film is formed on the Si / SiO2 substrate, and an array pattern is prepared for the photoresist film; the array pattern preparation for the photoresist film comprises: photolithography the photoresist film to form an arrayed photolithography pattern; developing the arrayed photolithography pattern to form an arrayed pattern of the exposed Si / SiO2 substrate; Depositing platinum material or palladium material on the Si / SiO2 substrate of the arrayed pattern by electron beam evaporation to obtain an arrayed platinum pattern or palladium pattern; The substrate having the arrayed platinum pattern or palladium pattern is placed in a chemical vapor deposition system, and an arrayed narrow bandgap two-dimensional material pattern is obtained by selenization or sulfurization treatment; Spin-coating a photoresist on an arrayed narrow-bandgap two-dimensional material pattern, so that a portion of the photoresist covers the two-dimensional material pattern and a portion covers the Si / SiO2 substrate; wherein the area of ​​the narrow-bandgap two-dimensional material pattern covered is larger than the area of ​​the Si / SiO2 substrate covered, and the covering ratio is between 1.3 and 2.5; using a vacuum oven to evaporate hydrophobic small molecules to obtain an array patterned substrate with distinct hydrophilic and hydrophobic characteristics; the portion of the Si / SiO2 substrate and the portion of the narrow-bandgap two-dimensional material pattern covered by the photoresist form a hydrophilic area, and the portion of the Si / SiO2 substrate and the portion of the exposed narrow-bandgap two-dimensional material pattern not covered by the photoresist form a hydrophobic area; A quasi-two-dimensional perovskite film is spin-coated to form on the hydrophobic area to prepare a quasi-two-dimensional perovskite / two-dimensional material heterojunction array.

2. The method for preparing a photodetector array according to claim 1, characterized in that , after the step of spin coating the quasi-two-dimensional perovskite film to prepare the quasi-two-dimensional perovskite / two-dimensional material array, the step further includes: A hard mask is used and electron beam evaporation is used to evaporate gold as a metal electrode on the surface of the quasi-two-dimensional perovskite / two-dimensional material array to obtain a quasi-two-dimensional perovskite / two-dimensional material photodetector array.

3. The method for preparing a photodetector array according to claim 1, characterized in that , the narrow bandgap two-dimensional material pattern includes a platinum selenide pattern, a palladium selenide pattern, a platinum sulfide pattern or a palladium sulfide pattern.

4. The method for preparing a photodetector array according to claim 1, characterized in that , the thickness of the Si / SiO2 substrate is 200nm-400nm.

5. The method for preparing a photodetector array according to claim 1, characterized in that , the Si / SiO2 substrate is provided, comprising: Prepare a Si / SiO2 substrate, clean it with deionized water, ethanol, acetone and / or isopropanol, then blow dry the Si / SiO2 substrate with a nitrogen gun and dry it in a drying oven at 40°C-70°C for 1-3 hours.

6. A photodetector array prepared according to the method according to any one of claims 1 to 5, characterized in that ,include: Si / SiO2 substrate; A narrow bandgap two-dimensional material array layer is arranged in an array on the surface of the Si / SiO2 substrate; a two-dimensional perovskite material layer, at least partially covering the narrow bandgap two-dimensional material array layer; The metal electrodes are respectively connected to the narrow bandgap two-dimensional material array layer and the two-dimensional perovskite material layer.

7. The photodetector array according to claim 6, characterized in that , the narrow bandgap two-dimensional material array layer includes: a platinum selenide array layer, a palladium selenide array layer, a platinum sulfide array layer or a palladium sulfide array layer.

8. The photodetector array according to claim 6, characterized in that , the thickness of the narrow bandgap two-dimensional material array layer is 10nm-100nm, and / or the thickness of the two-dimensional perovskite material layer is 10nm-100nm.

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