Cleaning device and process for semiconductor stainless steel ttn membranes

Abstract

The application discloses a kind of cleaning device and process of semiconductor stainless steel TTN film, including automatic mechanical arm, soaking basket, chemical mixed solution soaking tank one, pure water rinsing tank, high-pressure water washing tank, chemical mixed solution soaking tank two, pure water soaking tank and blow-drying tank set according to process step sequence, the automatic mechanical arm is set in the top of all tank body, and working end is connected soaking basket, the chemical mixed solution soaking tank one and chemical mixed solution soaking tank two are equipped with ultrasonic vibration plate, the high-pressure water washing tank is equipped with high-pressure water washing nozzle, the blow-drying tank is equipped with CDA high-pressure nozzle, this automatic cleaning device is composed of soaking tank, pure water tank, high-pressure water washing, CDA purging etc., component is no longer carried and cleaned by artificial in soaking basket, select the required operation tank body, equipment can quickly complete carrying and operation, cleaning tank uses outer circulation filter device, ensure the cleanliness of circulating liquid medicine, the anticorrosive ultrasonic vibration plate is used inside, utilize the cavitation effect, acceleration effect and direct flow effect of ultrasonic wave in liquid indirectly make dirt layer be dispersed, stripping and reach the purpose of cleaning;The whole cleaning device uses closed loop process operation, guarantee the effectiveness of component cleaning.

Description

Technical Field

[0001] This invention relates to a cleaning apparatus and process for a semiconductor stainless steel TTN film. Background Technology

[0002] Ti is commonly used as an adhesion layer to improve the adhesion between materials and substrates. As a barrier layer, Ti prevents the diffusion of metals such as copper at high temperatures. TiN is often used in hard coatings for tools to improve wear resistance and service life. Metal TTN deposition uses the commonly used PVD method. The cleaning process for stainless steel parts in the TTN equipment currently used in the cleaning industry mainly employs a certain proportion of nitrofluoric acid to remove surface deposits. During the sputtering process, the deposit thickness near the target area is higher than that at other locations. Therefore, during the immersion process, while deposits in the normal locations are cleaned, those near the target area at the top are not completely removed. The parts will then continue immersion to remove the remaining deposits.

[0003] Existing cleaning technologies have two main drawbacks:

[0004] 1. When the TTN device is immersed in nitric acid solution, Ti reacts rapidly with HF and the temperature rises, then Ti+ ions are generated and react further with nitric acid. The nitric acid solution after the reaction generates nitric oxide. Some of the generated nitric oxide reacts with oxygen in the air to generate nitrogen dioxide. Nitrogen dioxide is toxic and irritating, and the environmental pollution caused by nitrogen dioxide is also diverse.

[0005] 2. When the TTN unit is immersed in the nitrofluoric acid solution, Ti will react rapidly with HF and the temperature will rise. The high temperature of the solution poses a high risk and is not suitable for on-site personnel. At the same time, the high temperature of the nitrofluoric acid solution will react with the stainless steel, corroding the components and reducing the service life of the unit components.

[0006] Chinese Patent (Application No.: 2022106743356) "TiN Removal Solution" is composed of an oxidant, a pH buffer, additive A, additive B and deionized water. The oxidant is hydrogen peroxide, the pH buffer is a mixture of organic acids and organic acid salts, additive A is ammonium persulfate, and additive B is a mixture of phenol sulfonic acid, alcohols and metal masking agents. A large number of chemical agents are used for TiN removal, and a large amount of chemical waste is generated during the reaction process. Summary of the Invention

[0007] The purpose of this invention is to provide a cleaning apparatus and process for semiconductor stainless steel TTN films to solve the problems mentioned in the background art.

[0008] To achieve the above objectives, the present invention provides the following technical solution: a cleaning device and process for a semiconductor stainless steel TTN film. The device includes an automatic robotic arm, a soaking basket, and chemical mixed solution soaking tank one, a pure water rinsing tank, a high-pressure water washing tank, chemical mixed solution soaking tank two, a pure water soaking tank, and a drying tank arranged in the following process steps. The automatic robotic arm is positioned above all the tanks, and its working end is connected to the soaking basket. The chemical mixed solution soaking tank one and the chemical mixed solution soaking tank two are equipped with ultrasonic transducers. The high-pressure water washing tank is equipped with high-pressure water washing nozzles, and the drying tank is equipped with CDA high-pressure nozzles.

[0009] Preferably, both the chemical mixed solution soaking tank 1 and the chemical mixed solution soaking tank 2 are equipped with a liquid circulation device, including a liquid outlet located at the bottom of the tank, the liquid outlet being connected to a liquid circulation reactor, the reactor being connected to a filter device, and the filter device being connected to a liquid inlet at the top of the tank. All the connections are made through pipes, and a water pump is installed on the pipes.

[0010] Preferably, the chemical solution in the reactor is composed of ammonium fluoride, hydrogen peroxide, high-purity water, and cyclohexamethylenetetramine, prepared in a mass ratio of 2:8:8:1, and then circulated and stirred for 30 minutes.

[0011] Preferably, the cleaning process using this device includes the following steps:

[0012] S1, turn on the circulation pump of the chemical mixture soaking tank to circulate the chemical solution in the soaking tank and the chemical reaction vessel;

[0013] S2, then turn on all ultrasonic waves in the chemical mixture soaking tank, with a power density > 1 W / in²;

[0014] S3, lift the soaking basket and place it into the chemical mixture soaking tank one; the soaking time for the parts is ≥5 minutes.

[0015] S4, lift the soaking basket in the chemical mixture soaking tank one, and then hold the soaking basket in the air for 2-5 minutes;

[0016] S5. Place the mobile soaking basket into the pure water rinsing tank and soak the parts for 5-10 minutes;

[0017] S6. Place the soaking basket into the high-pressure water washing tank and wash for 10-20 minutes.

[0018] S7, lift the soaking basket and place it into the second chemical mixed solution soaking tank; the soaking time for the component is ≥5 minutes.

[0019] S8, lift the soaking basket in the second chemical mixture soaking tank, and then hold the soaking basket in the air for 2-5 minutes;

[0020] S9. Place the mobile soaking basket into the pure water soaking tank, and soak the parts for 5-10 minutes;

[0021] S10, place the soaking basket into the drying tank, and dry for 10-15 minutes.

[0022] Compared with the prior art, the beneficial effects of the present invention are as follows: The automated cleaning device consists of an soaking tank, a pure water tank, a high-pressure water washing system, and a CDA purging system. Components no longer require manual handling and cleaning in the soaking basket. Once the required working tank is selected, the equipment can quickly complete the handling and cleaning. The cleaning tank uses an external circulation filtration device to ensure the cleanliness of the circulating solution. The internal anti-corrosion ultrasonic vibrating plate utilizes the cavitation, acceleration, and direct flow effects of ultrasound in the liquid to indirectly disperse and peel off the dirt layer, thus achieving the cleaning purpose. The entire cleaning device adopts a closed-loop process operation to ensure the effectiveness of component cleaning.

[0023] Depending on the size of the components, multiple components can be stacked, which greatly improves cleaning efficiency while reducing equipment investment costs and the labor intensity of employees.

[0024] Compared to strong acids and ammonium bifluoride, ammonium fluoride has lower viscosity, higher vapor pressure, and is more volatile. Therefore, using ammonium fluoride as a masking agent can reduce the risk of residual contaminants. At the same time, ammonium fluoride is less toxic and less harmful to operators, thus possessing good safety. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the structure of the present invention;

[0026] Figure 2 This is a schematic diagram of a circulation device for a chemical mixture soaking tank.

[0027] In the diagram: 1. Automatic robotic arm, 2. Soaking basket, 3. Ultrasonic vibrating plate, 4. Chemical mixed solution soaking tank one, 5. Pure water rinsing tank, 6. High-pressure water washing tank, 7. Chemical mixed solution soaking tank two, 8. Pure water soaking tank, 9. Drying tank, 10. CDA high-pressure nozzle, 11. High-pressure water washing nozzle, 12. Tank body, 13. Water pump, 14. Reactor, 15. Filtration device. Detailed Implementation

[0028] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0029] Please see Figure 1-2This invention provides a technical solution: a cleaning device and process for a semiconductor stainless steel TTN film. The device includes an automatic robotic arm 1, a soaking basket 2, and chemical mixed solution soaking tank 1 4, a pure water rinsing tank 5, a high-pressure water washing tank 6, a chemical mixed solution soaking tank 2 7, a pure water soaking tank 8, and a drying tank 9 arranged in the process steps. The automatic robotic arm 1 is located above all the tanks, and its working end is connected to the soaking basket 2. The chemical mixed solution soaking tank 1 4 and the chemical mixed solution soaking tank 2 7 are equipped with ultrasonic vibration plates 3. The high-pressure water washing tank 6 is equipped with high-pressure water washing nozzles 11, and the drying tank 9 is equipped with CDA high-pressure nozzles 10.

[0030] Chemical mixing soaking tank 1 4 and chemical mixing soaking tank 2 7 are equipped with a chemical solution circulation device, including a liquid outlet located at the bottom of the tank body 12, the liquid outlet being connected to the reaction vessel 14, the reaction vessel 14 being connected to the filter device 15, and the filter device 15 being connected to the liquid inlet at the top of the tank body. All the connections are made through pipes, and a water pump 13 is installed on the pipes.

[0031] The chemical solution in the reactor consists of ammonium fluoride, hydrogen peroxide, high-purity water, and cyclohexamethylenetetramine, prepared in a mass ratio of 2:8:8:1. After preparation, the solution is circulated and stirred for 30 minutes. The chemical solution in the reactor can maintain the concentration of the chemical solution in the chemical mixing soaking tank.

[0032] The cleaning process using this device is as follows:

[0033] S1, turn on the circulation pump of the chemical mixture soaking tank to circulate the chemical solution in the soaking tank and the chemical reaction vessel;

[0034] S2, then turn on all ultrasonic waves in the chemical mixture soaking tank, with a power density > 1 W / in²;

[0035] S3, lift the soaking basket and place it into the chemical mixture soaking tank one; the soaking time for the parts is ≥5 minutes.

[0036] S4, lift the soaking basket in the chemical mixture soaking tank one, and then hold the soaking basket in the air for 2-5 minutes;

[0037] S5. Place the mobile soaking basket into the pure water rinsing tank and soak the parts for 5-10 minutes;

[0038] S6. Place the soaking basket into the high-pressure water washing tank and wash for 10-20 minutes.

[0039] S7, lift the soaking basket and place it into the second chemical mixed solution soaking tank; the soaking time for the component is ≥5 minutes.

[0040] S8, lift the soaking basket in the second chemical mixture soaking tank, and then hold the soaking basket in the air for 2-5 minutes;

[0041] S9. Place the mobile soaking basket into the pure water soaking tank, and soak the parts for 5-10 minutes;

[0042] S10, place the soaking basket into the drying tank, and dry for 10-15 minutes.

[0043] This automated cleaning unit consists of an immersion tank, a pure water tank, a high-pressure water wash, and a CDA purging system. Components are no longer manually moved and cleaned in the immersion basket. Once the required work tank is selected, the equipment can quickly complete the transfer and cleaning process. The cleaning tank uses an external circulation filtration system to ensure the cleanliness of the circulating solution. Internally, it employs corrosion-resistant ultrasonic vibrating plates, utilizing the cavitation, acceleration, and direct flow effects of ultrasound in the liquid to indirectly disperse and peel off the dirt layer, achieving the cleaning purpose. The entire cleaning unit operates in a closed-loop process, ensuring the effectiveness of component cleaning.

[0044] Depending on the size of the components, multiple components can be stacked, which greatly improves cleaning efficiency while reducing equipment investment costs and the labor intensity of employees.

[0045] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A cleaning device for a semiconductor stainless steel TTN film, characterized in that: The device includes an automated robotic arm, a soaking basket, and, in sequence according to the process steps, a chemical mixed solution soaking tank I, a pure water rinsing tank, a high-pressure water washing tank, a chemical mixed solution soaking tank II, a pure water soaking tank, and a drying tank. The automated robotic arm is positioned above all the tanks, with its working end connected to the soaking basket. Chemical mixed solution soaking tanks I and II are equipped with a solution circulation device, including an outlet at the bottom of the tank, which connects to a reaction vessel. The reaction vessel is connected to a filter device, which connects to an inlet at the top of the tank. All connections are via pipes equipped with water pumps. Ultrasonic vibrators are installed in chemical mixed solution soaking tanks I and II. The high-pressure water washing tank contains high-pressure water nozzles, and the drying tank contains CDA high-pressure nozzles. The chemical solution in the reaction vessel is formulated with ammonium fluoride, hydrogen peroxide, high-purity water, and cyclohexamethylenetetramine in a mass ratio of 2:8:8:1, and is circulated and stirred for 30 minutes after preparation.

2. The method using the cleaning apparatus for a semiconductor stainless steel TTN film as described in claim 1, characterized in that: The steps are as follows: S1, turn on the circulation pump of the chemical mixture soaking tank to circulate the chemical solution in the soaking tank and the reaction vessel; S2, then turn on all ultrasonic waves in chemical mixing soaking tank one and chemical mixing soaking tank two, with a power density > 1w / in²; S3, lift the soaking basket and place it into the chemical mixture soaking tank one; the soaking time for the parts is ≥5 minutes. S4, lift the soaking basket in the chemical mixture soaking tank one, and then hold the soaking basket in the air for 2-5 minutes; S5. Place the mobile soaking basket into the pure water rinsing tank and soak the parts for 5-10 minutes; S6. Place the soaking basket into the high-pressure water washing tank and wash for 10-20 minutes. S7, lift the soaking basket and place it into the second chemical mixed solution soaking tank; the soaking time for the component is ≥5 minutes. S8, lift the soaking basket in the second chemical mixture soaking tank, and then hold the soaking basket in the air for 2-5 minutes; S9. Place the mobile soaking basket into the pure water soaking tank, and soak the parts for 5-10 minutes; S10, place the soaking basket into the drying tank, and dry for 10-15 minutes.

Images