Antenna unit and substrate processing apparatus including the same

Abstract

Provided are an antenna unit having a slot structure capable of achieving maximum emission efficiency and a substrate processing apparatus including the antenna unit. The substrate processing apparatus includes: a chamber housing; a substrate support unit that supports the substrate; a showerhead unit that supplies a process gas for processing the substrate onto the substrate; a plasma generation unit including a high-frequency power source and generating plasma in the internal space of the chamber housing using a process gas and power supplied by the high-frequency power source; and an antenna unit connected to a high-frequency power supply and operating as an electrode for generating plasma, in which the antenna unit includes a plurality of groove pairs formed in the groove plate, and the groove pairs are arranged radially from a central region of the groove plate.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus including an antenna unit, and more particularly, to a substrate processing apparatus that generates plasma using the antenna unit as an electrode and processes a substrate using the plasma. Background Art

[0002] In the case of processing a semiconductor substrate using plasma, an electrostatic chuck (ESC) and an antenna unit may be used as electrodes to generate plasma in a discharge space. In order to form plasma at high density over a large area, an antenna unit including a radial line slot antenna (RLSA) may be used as an electrode.

[0003] However, the RLSA was originally developed as a communication antenna for long-distance radiation, and thus has a problem of being unsuitable for application in a chamber environment. Summary of the invention

[0004] Aspects of the present disclosure provide an antenna unit having a slot structure capable of achieving maximum radiation efficiency and a substrate processing apparatus including the antenna unit.

[0005] However, aspects of the present disclosure are not limited to the contents set forth herein. For those of ordinary skill in the art to which the present disclosure pertains, the above and other aspects of the present disclosure will become more apparent by referring to the detailed description of the present disclosure given below.

[0006] According to one aspect of the present disclosure, a substrate processing device includes: a chamber housing; a substrate supporting unit, which is disposed in the chamber housing and supports a substrate; a nozzle unit, which is disposed in the chamber housing and provides a process gas for processing the substrate onto the substrate; a plasma generating unit, which includes a high-frequency power supply and generates plasma in an internal space of the chamber housing using the process gas and power provided by the high-frequency power supply; and an antenna unit, which is connected to the high-frequency power supply and operates as an electrode for generating plasma, wherein the antenna unit includes a plurality of slot pairs formed in a slot plate, and the slot pairs are radially arranged from a central area of ​​the slot plate.

[0007] According to another aspect of the present disclosure, an antenna unit installed in a substrate processing device for processing a substrate using plasma to operate as an electrode includes: a first dielectric module configured to serve as a top cover of a chamber housing; an antenna module disposed on the first dielectric module and including a slot plate and a plurality of slot pairs formed on the slot plate; and a second dielectric module disposed on the antenna module, wherein the slot pairs are radially arranged from a central area of ​​the slot plate.

[0008] According to another aspect of the present disclosure, a substrate processing device includes: a chamber housing; a substrate supporting unit, which is arranged in the chamber housing and supports the substrate; a nozzle unit, which is arranged in the chamber housing and provides a process gas for processing the substrate onto the substrate; a plasma generating unit, which includes a high-frequency power supply and generates plasma in an internal space of the chamber housing using the process gas and the power provided by the high-frequency power supply; and an antenna unit, which is connected to the high-frequency power supply and operates as an electrode for generating plasma, wherein the antenna unit includes a plurality of slot pairs formed in a slot plate, the slot pairs are radially arranged from a central area of ​​the slot plate, some of the slot pairs are arranged at positions related to the crests of microwaves moving from the central area of ​​the slot plate toward the outer end of the slot plate and the crests of standing waves generated by reflected waves of the microwaves, and the slot pairs are arranged in rows at intervals of their respective distances from the outer end of the slot plate, the distance being calculated by the following equation: distance = ((1 / 2*n)+1 / 4)*λg, wherein λg refers to the wavelength in the waveguide, and n is 0 or a positive integer.

[0009] It should be noted that the effects of the present disclosure are not limited to those described above, and other effects of the present disclosure will be apparent from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The above and other aspects and features of the present disclosure will become more apparent by describing in detail exemplary embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0011] Figure 1 is a first exemplary schematic diagram showing an internal configuration of semiconductor manufacturing equipment for processing a semiconductor substrate;

[0012] Figure 2 is a second exemplary schematic diagram showing an internal configuration of semiconductor manufacturing equipment for processing a semiconductor substrate;

[0013] Figure 3 is a third exemplary schematic diagram showing an internal configuration of semiconductor manufacturing equipment for processing a semiconductor substrate;

[0014] Figure 4 is a first exemplary cross-sectional view showing the internal configuration of a substrate processing device constituting semiconductor manufacturing equipment;

[0015] Figure 5 is a second exemplary cross-sectional view showing the internal configuration of a substrate processing device constituting semiconductor manufacturing equipment;

[0016] Figure 6 is a first exemplary schematic diagram showing a configuration of an antenna unit constituting a substrate processing apparatus;

[0017] Figure 7 is a first exemplary schematic diagram showing a relationship between an antenna module of an antenna unit and a plasma region;

[0018] Figure 8 is a second exemplary schematic diagram showing a relationship between an antenna module of an antenna unit and a plasma region;

[0019] Fig. 9 is an exemplary schematic diagram showing the configuration of an antenna module of an antenna unit;

[0020] Fig.10 is a first exemplary schematic diagram showing the shape of each slot pair constituting the antenna module;

[0021] Fig.11 is a second exemplary schematic diagram showing the shape of each slot pair constituting the antenna module;

[0022] Fig.12 is a third exemplary schematic diagram showing the shape of each slot pair constituting the antenna module;

[0023] Fig.13 is a fourth exemplary schematic diagram showing the shape of each slot pair constituting the antenna module;

[0024] Fig.14 is a fifth exemplary schematic diagram showing the shape of each slot pair constituting the antenna module;

[0025] Fig.15 is a sixth exemplary schematic diagram showing the shape of each slot pair constituting the antenna module;

[0026] Fig.16 is a first exemplary schematic diagram showing an arrangement structure of a plurality of slot pairs in a slot plate constituting an antenna module;

[0027] Fig.17 is a second exemplary schematic diagram showing an arrangement structure of a plurality of slot pairs in a slot plate constituting an antenna module;

[0028] Fig.18 is a third exemplary schematic diagram showing an arrangement structure of a plurality of slot pairs in a slot plate constituting an antenna module;

[0029] Fig.19 is a fourth exemplary schematic diagram showing an arrangement structure of a plurality of slot pairs in a slot plate constituting an antenna module;

[0030] Fig. 20 is a first exemplary schematic diagram showing the effect of the antenna unit according to an embodiment of the present disclosure;

[0031] Fig.21 is a second exemplary schematic diagram showing the effect of the antenna unit according to the embodiment of the present disclosure; and

[0032] Fig. 22is a second exemplary schematic diagram showing an antenna unit constituting the substrate processing apparatus. DETAILED DESCRIPTION

[0033] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. The same reference numerals are used for the same components in the drawings, and redundant explanations of these components are omitted.

[0034] The substrate processing device according to an embodiment of the present disclosure may use plasma to process a semiconductor substrate. To this end, the substrate processing device may include an antenna unit. The antenna unit may include a radial line slot antenna (RLSA). The antenna unit may have a slot structure capable of achieving maximum radiation efficiency.

[0035] Figure 1 is a first exemplary schematic diagram showing an internal configuration of semiconductor manufacturing equipment for processing a semiconductor substrate. Figure 2 is a second exemplary schematic diagram showing the internal configuration of semiconductor manufacturing equipment for processing a semiconductor substrate. Figure 3 is a third exemplary schematic diagram showing the internal configuration of semiconductor manufacturing equipment for processing a semiconductor substrate.

[0036] refer to Figures 1 to 3 The semiconductor manufacturing equipment 100 may be configured to include a load port module 110 , an index module 120 , a load lock chamber 130 , a transfer module 140 , and a process chamber 150 .

[0037] The semiconductor manufacturing equipment 100 is a system for processing semiconductor substrates using deposition, etching and cleaning processes. The semiconductor manufacturing equipment 100 may include multiple process chambers, but the present disclosure is not limited thereto. Alternatively, the semiconductor manufacturing equipment 100 may include a single process chamber. The multiple process chambers may include the same type of process chambers, but the present disclosure is not limited thereto. Alternatively, the multiple process chambers may include different types of process chambers. When the semiconductor manufacturing equipment 100 includes multiple process chambers, the semiconductor manufacturing equipment 100 may be configured as a multi-chamber substrate processing system.

[0038] The load port module 110 is configured to receive a container SC loaded with a plurality of semiconductor substrates. The container SC may be, for example, a front opening pod (FOUP).

[0039] The container SC may be loaded into or unloaded from the load port module 110. In addition, semiconductor substrates stored in the container SC may also be loaded into or unloaded from the load port module 110.

[0040] When the target to be loaded or unloaded is a container SC, the container transporter can load or unload the container SC. Specifically, when loading a container SC, the container transporter can grab and hold the container SC, and then place the container SC on the load port module 110. When unloading a container SC, the container transporter can grab the container SC to leave the load port module 110. Figures 1 to 3 Not shown, the container transport equipment may be configured as an overhead truck (OHT).

[0041] When the target to be loaded or unloaded is a semiconductor substrate, the first transfer robot 122 provided in the index module 120 may load or unload the semiconductor substrate. When unloading the semiconductor substrate, once the container SC is mounted on the load port module 110, the first transfer robot 122 may approach the load port module 110, and then may pick up the semiconductor substrate from the container SC mounted on the load port module 110. When loading the semiconductor substrate, once the processed semiconductor substrate is provided to the load lock chamber 130, the first transfer robot 122 may pick up the processed semiconductor substrate from the load lock chamber 130, and then place the processed semiconductor substrate in the container SC.

[0042] A plurality of load port modules 110 may be disposed in front of the index module 120. For example, three load port modules (ie, a first load port module 110a, a second load port module 110b, and a third load port module 110c) may be disposed in front of the index module 120.

[0043] When a plurality of load port modules 110 are disposed in front of the index module 120, the containers SC on the load port modules 110 may include different types of items. For example, when the first load port module 110a, the second load port module 110b, and the third load port module 110c are disposed in front of the index module 120, the first container SC1 placed on the first load port module 110a may include a wafer-type sensor, the second container SC2 placed on the second load port module 110b may include a semiconductor substrate, and the third container SC3 placed on the third load port module 110c may include consumable parts such as a cluster ring, an edge ring, and the like.

[0044] However, the present disclosure is not limited thereto. Alternatively, the first container SC1, the second container SC2, and the third container SC3 may include items of the same type. Alternatively again, some of the first container SC1, the second container SC2, and the third container SC3 may include items of the same type, and other containers may include items of different types.

[0045] The index module 120 may be provided between the loadport module 110 and the loadlock chamber 130 to serve as an interface. The index module 120 may be provided as an interface that allows semiconductor substrates to travel between the container SC on the loadport module 110 and the loadlock chamber 130.

[0046] The indexing module 120 may include a first module housing 121 and a first transfer robot 122. The first transfer robot 122 is disposed in the first module housing 121 and may transfer semiconductor substrates between the load port module 110 and the load lock chamber 130. The internal environment of the first module housing 121 is set to atmospheric pressure, thereby allowing the first transfer robot 122 to operate under an atmospheric pressure environment. A single first transfer robot 122 may be disposed in the first module housing 121, but the present disclosure is not limited thereto. Alternatively, a plurality of first transfer robots 122 may be disposed.

[0047] Despite Figures 1 to 3 Although not shown in the figure, the index module 120 may also include a buffer chamber. The buffer chamber may temporarily store unprocessed substrates before transferring the unprocessed substrates to the load lock chamber 130. In addition, the buffer chamber may temporarily store processed substrates before transferring the processed substrates to the container SC on the load port module 110. The buffer chamber may be provided on the inner wall of the first module housing 121.

[0048] The semiconductor manufacturing equipment 100 may be configured as a front end module (FEM) in which the load port module 110 and the index module 120 are integrated together. For example, the FEM may be configured as an equipment FEM (EFEM).

[0049] As mentioned above, a plurality of load port modules 110 may be disposed in the semiconductor manufacturing equipment 100. Figures 1 to 3 In the example of FIG. 1 , the load port modules 110 may be arranged in a horizontal direction (e.g., a first direction D1), but the present disclosure is not limited thereto. Alternatively, the load port modules 110 may be stacked in a vertical direction (e.g., a third direction D3). In the case where the load port modules 110 are stacked vertically, the FEM may be configured as a vertically stacked EFEM.

[0050] The load lock chamber 130 may be used as a buffer chamber between an input port and an output port in the semiconductor manufacturing equipment 100. That is, the load lock chamber 130 may temporarily store unprocessed or processed substrates between the load port module 110 and the process chamber 150. Figures 1 to 3 Although not shown, the load lock chamber 130 may include a buffer stage for temporarily storing the semiconductor substrate.

[0051] A plurality of load lock chambers 130 may be disposed between the index module 120 and the transfer module 140. For example, two load lock chambers (ie, a first load lock chamber 130a and a second load lock chamber 130b) may be disposed between the index module 120 and the transfer module 140.

[0052] The load lock chamber 130 may be arranged in the same direction as the load port module 110. Figures 1 to 3 In the example of FIG. 1 , the first load lock chamber 130a and the second load lock chamber 130b may be arranged in the same direction as the first load port module 110a, the second load port module 110b, and the third load port module 110c, that is, arranged in the horizontal direction (e.g., the first direction D1). The first load lock chamber 130a and the second load lock chamber 130b may be provided in a symmetrical single-layer structure in which they are spaced apart from each other in the horizontal direction.

[0053] However, the present disclosure is not limited thereto. Alternatively, the load lock chamber 130 may be arranged in a direction different from the load port module 110. The first load lock chamber 130a and the second load lock chamber 130b may be arranged between the index module 120 and the transfer module 140 in a vertical direction (e.g., the third direction D3). The first load lock chamber 130a and the second load lock chamber 130b may be provided in a double-layer structure in which they are spaced apart from each other in the vertical direction.

[0054] One of the first load lock chamber 130a and the second load lock chamber 130b may temporarily store an unprocessed semiconductor substrate transferred from the index module 120 to the transfer module 140, and the other load lock chamber may temporarily store a processed semiconductor substrate transferred from the transfer module 140 to the index module 120. However, the present disclosure is not limited thereto.

[0055] The internal environment of the load lock chamber 130 may be changed between a vacuum environment and an atmospheric pressure environment using a gate valve. Specifically, when the first transfer robot 122 provided in the index module 120 loads or unloads a semiconductor substrate into or from the load lock chamber 130, the load lock chamber 130 may provide an internal environment that is the same as or similar to the internal environment of the index module 120, which is an atmospheric environment. In addition, when the second transfer robot 142 provided in the transfer module 140 loads or unloads a semiconductor substrate into or from the load lock chamber 130, the load lock chamber 130 may provide an internal environment that is the same as or similar to the internal environment of the transfer module 140, which is a vacuum environment. In this way, the load lock chamber 130 may prevent the internal pressure states of the index module 120 and the transfer module 140 from changing.

[0056] The transfer module 140 may be disposed between the load lock chamber 130 and the process chamber 150 to serve as an interface. The transfer module 140 may be provided as an interface that allows the semiconductor substrate to move back and forth between the load lock chamber 130 and the process chamber 150.

[0057] The transfer module 140 may include a second module housing 141 and a second transfer robot 142. The second transfer robot 142 is disposed in the second module housing 141, and may transfer the semiconductor substrate between the load lock chamber 130 and the process chamber 150. The internal environment of the second module housing 141 may be set as a vacuum environment, and the second transfer robot 142 may operate in the vacuum environment. A single second transfer robot 142 may be provided in the second module housing 141, but the present disclosure is not limited thereto. Alternatively, a plurality of second transfer robots 142 may be provided.

[0058] The transfer module 140 may be connected to a plurality of process chambers 150. To this end, the second module housing 141 may have a plurality of sides, and the second transfer robot 142 may be provided to be freely movable through each side of the second module housing 141 to load or unload the semiconductor substrate into or from each of the process chambers 150.

[0059] The process chamber 150 processes a semiconductor substrate. When an unprocessed semiconductor substrate is provided, the process chamber 150 may process the semiconductor substrate and may supply the processed semiconductor substrate to the load lock chamber 130 via the transfer module 140. The process chamber 150 will be described in more detail later.

[0060] When the semiconductor manufacturing equipment 100 includes a plurality of process chambers 150, the semiconductor manufacturing equipment 100 may be formed into a cluster platform structure. Figure 1 As shown in , the process chambers 150 may be arranged in a clustered manner around the transfer module 140, but the present disclosure is not limited thereto. Alternatively, when the semiconductor manufacturing equipment 100 includes a plurality of process chambers 150, the semiconductor manufacturing equipment 100 may be formed with a quadrilateral platform structure. For example, Figure 2 As shown in , the process chambers 150 may be arranged in a quadrant manner around the transfer module 140. Alternatively, when the semiconductor manufacturing equipment 100 includes a plurality of process chambers 150, the semiconductor manufacturing equipment 100 may be formed with an in-line platform structure. Figure 3 As shown in , the process chambers may be arranged in a linear manner around the transfer module 140 , and two different process chambers 150 may be arranged in series on either side of the transfer module 140 .

[0061] Despite Figures 1 to 3Although not shown in the figure, the semiconductor manufacturing equipment 100 may further include a control device. The control device controls the overall operation of each component of the semiconductor manufacturing equipment 100. For example, the control device may control the transfer of the semiconductor substrate by the first transfer robot 122 or the second transfer robot 142, control the change of the internal environment of the load lock chamber 130, and control the processing of the substrate by the process chamber 150.

[0062] The control device may include one or more modules related to the function or operation of each component for controlling the semiconductor manufacturing equipment 100. These modules may be provided in the form of an application or a program, and may be implemented by instructions stored on a computer-readable storage medium (e.g., a hard disk, a portable disk (such as a CD-ROM or a DVD), a semiconductor memory (such as a flash memory), etc.). When these instructions are executed by a processor, the processor may perform functions corresponding to these instructions. The instructions may include a code generated by a compiler or a code executable by an interpreter. The control device may be configured as a computing device that communicates with each component of the semiconductor manufacturing equipment 100 via a wired network or a wireless network for information processing, data provision, etc.

[0063] The process chamber 150 will be described below. The surface of the process chamber 150 may be formed of alumite having an anodized film, and the interior of the process chamber 150 may be configured to be hermetically sealed. A plurality of process chambers 150 may be provided in the semiconductor manufacturing equipment 100, and the process chambers 150 may be spaced apart from each other around the circumference of the transfer module 140. However, the present disclosure is not limited thereto. Alternatively, a single process chamber 150 may be provided in the semiconductor manufacturing equipment 100. The process chamber 150 may be configured to be cylindrical in shape, but the present disclosure is not limited thereto. The process chamber 150 may also be configured to be other shapes.

[0064] As described above, the process chamber 150 can process a semiconductor substrate. Hereinafter, the internal configuration of the process chamber 150 will be described, assuming that the process chamber 150 is a substrate processing apparatus.

[0065] Figure 4 2 is a cross-sectional view showing the internal configuration of a substrate processing device constituting semiconductor manufacturing equipment. Figure 4 The substrate processing apparatus 200 may be configured to include a chamber housing CH, a substrate supporting unit 210, a cleaning gas supply unit 220, a process gas supply unit 230, a showerhead unit 240, a plasma generating unit 250, a liner unit 260, a baffle unit 270, and an antenna unit 280.

[0066] The substrate processing apparatus 200 may process the semiconductor substrate W using plasma. The substrate processing apparatus 200 may process the semiconductor substrate W using a dry process. The substrate processing apparatus 200 may process the semiconductor substrate W in a vacuum environment. The substrate processing apparatus 200 may process the semiconductor substrate W using a deposition process, an etching process, a cleaning process, and the like.

[0067] The substrate processing apparatus 200 may include Figure 4 , but the present disclosure is not limited thereto. Alternatively, the substrate processing apparatus 200 may not include Figure 4 Some of the units shown in .

[0068] The chamber housing CH provides a space in which a process (ie, a plasma process) for treating the semiconductor substrate W using plasma is performed. The chamber housing CH may be equipped with an exhaust hole 201 at a lower portion thereof.

[0069] The exhaust hole 201 may be connected to an exhaust line 203 equipped with a pump 202. The exhaust hole 201 may exhaust reaction byproducts generated during plasma processing and residual gas within the chamber housing CH to the outside of the chamber housing CH via the exhaust line 203. In this case, the inner space of the chamber housing CH may be decompressed.

[0070] The opening 204 may be formed by penetrating the sidewall of the chamber housing CH. The opening 204 may be provided as a passage for the semiconductor substrate W to enter and exit the interior of the chamber housing CH. For example, the opening 204 may be configured to be automatically opened and closed by a door assembly 205.

[0071] The door assembly 205 may be configured to include an outer door 206 and a door actuator 207. The outer door 206 may open and close the opening 204 from the outer wall of the chamber housing CH. Under the control of the door actuator 207, the outer door 206 may move in the height direction (or the third direction D3) of the substrate processing apparatus 200. The door actuator 207 may be operated using at least one element selected from a motor, a hydraulic cylinder, and a pneumatic cylinder.

[0072] The substrate support unit 210 is installed in the lower area of ​​the chamber housing CH. The substrate support unit 210 can use electrostatic force to attract and support the semiconductor substrate W. The substrate support unit 210 can be configured as, for example, an electrostatic chuck (ESC), but the present disclosure is not limited thereto. Alternatively, the substrate support unit 210 can use various other methods (such as vacuum, mechanical clamping, etc.) to support the semiconductor substrate W.

[0073] When the substrate supporting unit 210 supports the semiconductor substrate W using an electrostatic force, the substrate supporting unit 210 may be configured to include a base plate 211 and a dielectric layer 212 .

[0074] The substrate 211 may be formed of a material having excellent corrosion resistance and heat resistance. For example, the substrate 211 may be provided as an aluminum body.

[0075] The dielectric layer 212 may be disposed on the substrate 211. For example, the dielectric layer 212 may be formed of a ceramic material.

[0076] The focusing ring 213 is disposed to surround an outer edge region of the dielectric layer 212. When a plasma process is performed in the chamber housing CH, the focusing ring 213 may be used to concentrate radical ions onto the semiconductor substrate W. The focusing ring 213 may be formed of a silicon material.

[0077] Despite Figure 4 Although not shown in the figure, the substrate support unit 210 may further include an edge ring surrounding the outer area of ​​the focusing ring 213. The ring assembly including the focusing ring 213 and the edge ring may be disposed in the outer edge area of ​​the dielectric layer 212. The edge ring may be used to prevent the side of the dielectric layer 212 from being damaged by plasma. The edge ring may be formed of an insulating material. For example, the edge ring may be formed of quartz.

[0078] The cooling element 214 is provided to maintain the semiconductor substrate W at a process temperature when a substrate processing process (i.e., a plasma process) is performed in the chamber housing CH. The cooling element 214 may be provided as a cooling line through which a refrigerant flows to reduce the temperature of the semiconductor substrate W. The cooling element 214 may be installed in the base plate 211. The cooling element 214 may be installed between the base plate 211 and the dielectric layer 212. The cooling element 214 may receive a refrigerant from a separate cooling device (i.e., a cooler 215) provided outside the substrate processing apparatus 200. The refrigerant may include, for example, a coolant and / or helium.

[0079] In addition to the cooling element 214 , the substrate support unit 210 may further include a heating element 216 to maintain the semiconductor substrate W at a process temperature. Figure 5 2 is a second exemplary cross-sectional view showing the internal configuration of a substrate processing device constituting semiconductor manufacturing equipment. Figure 5 The heating element 216 may be configured as a heating wire to increase the temperature of the semiconductor substrate W. The heating element 216 may be installed in the dielectric layer 212 .

[0080] Refer to Figure 4 The cleaning gas supply unit 220 provides a cleaning gas to the dielectric layer 212 or the focusing ring 213 to remove any residual foreign matter on the dielectric layer 212 or the focusing ring 213. For example, the cleaning gas supply unit 220 can provide nitrogen (N 2 ) as a cleaning gas.

[0081] The cleaning gas supply unit 220 may include a cleaning gas supply source 221 and a cleaning gas supply line 222. The cleaning gas supply line 222 may be connected to the space between the dielectric layer 212 and the focusing ring 213. The cleaning gas supplied by the cleaning gas supply source 221 may be moved to the space between the dielectric layer 212 and the focusing ring 213 through the cleaning gas supply line 222 to remove any foreign matter remaining on the edge of the dielectric layer 212 or the top of the focusing ring 213.

[0082] The process gas supply unit 230 supplies the process gas into the chamber housing CH. The process gas supply unit 230 may supply the process gas through a hole formed to penetrate the top cover of the chamber housing CH (i.e., the window module WM), but the present disclosure is not limited thereto. Alternatively, the process gas supply unit 230 may supply the process gas through a hole formed to penetrate the side wall of the chamber housing CH.

[0083] The process gas supply unit 230 may include a process gas supply source 231 and a process gas supply line 232. The process gas supply source 231 may provide a gas for processing a semiconductor substrate W as a process gas. A single process gas supply source 231 may be provided in the substrate processing apparatus 200, but the present disclosure is not limited thereto. Alternatively, a plurality of process gas supply sources 231 may be provided in the substrate processing apparatus 200. In this case, the plurality of process gas supply sources 231 may provide the same type of process gas or different types of process gases.

[0084] The shower head unit 240 sprays a process gas provided by the process gas supply source 231 over an entire area on the semiconductor substrate W located in the inner space of the chamber housing CH. The shower head unit 240 may be connected to the process gas supply source 231 through a process gas supply line 232.

[0085] The showerhead unit 240 is disposed in the inner space of the chamber housing CH and may include a unit body 241 and a plurality of gas supply holes 242. The gas supply holes 242 may be formed to penetrate the surface of the unit body 241 in a vertical direction (e.g., the third direction D3). The gas supply holes 242 may be spaced apart from each other at regular intervals on the surface of the unit body 241. The showerhead unit 240 may uniformly spray the process gas throughout the entire area of ​​the semiconductor substrate W through the gas supply holes 242.

[0086] The shower head unit 240 may be installed in the chamber housing CH to face the substrate support unit 210 in a vertical direction (e.g., the third direction D3). The shower head unit 240 may be provided with a larger diameter than the dielectric layer 212, but the present disclosure is not limited thereto. Alternatively, the shower head unit 240 may be provided with the same diameter as the dielectric layer 212. The shower head unit 240 may be formed of silicon as a material, but the present disclosure is not limited thereto. Alternatively, the shower head unit 240 may be formed of metal.

[0087] Despite Figure 4 Although not shown in the figure, the nozzle unit 240 can be divided into a plurality of modules. For example, the nozzle unit 240 can be divided into three modules, namely a first module, a second module and a third module. The first module can be arranged at a position corresponding to the central area of ​​the semiconductor substrate W. The second module can be arranged to surround the outer edge of the first module. The second module can be arranged at a position corresponding to the middle area of ​​the semiconductor substrate W. The third module can be arranged to surround the outer edge of the second module. The third module can be arranged at a position corresponding to the edge area of ​​the semiconductor substrate W.

[0088] Despite Figure 4 Although not shown, when the showerhead unit 240 is divided into a plurality of modules, the process gas supply unit 230 may further include a process gas distributor and a process gas distribution line to distribute the process gas to each of the modules of the showerhead unit 240. The process gas distributor may be installed on the process gas supply line 232, and the process gas distribution line may distribute the process gas supplied from the process gas supply source 231 to each of the modules of the showerhead unit 240. The process gas distribution line may be a part of the process gas supply line 232, and the process gas distributor may be connected to each of the modules of the showerhead unit 240.

[0089] The plasma generating unit 250 generates plasma from the gas retained in the discharge space. The discharge space may be the inner space of the chamber housing CH and may be formed between the showerhead unit 240 and the window module WM. Alternatively, the discharge space may be formed between the substrate support unit 210 and the showerhead unit 240. If the discharge space includes both the space formed between the showerhead unit 240 and the window module WM and the space formed between the substrate support unit 210 and the showerhead unit 240, the space formed between the showerhead unit 240 and the window module WM may be a plasma region. The space formed between the substrate support unit 210 and the showerhead unit 240 may be a process region. If the discharge space includes only the space formed between the substrate support unit 210 and the showerhead unit 240, the discharge space may be divided into a plasma region and a process region. The plasma region may be formed at a height higher than the process region.

[0090] The plasma generating unit 250 may generate plasma in the discharge space using an inductively coupled plasma (ICP) source. For example, the plasma generating unit 250 may generate plasma in the discharge space using the substrate supporting unit 210 and the antenna unit 280 as a first electrode (or lower electrode) and a second electrode (or upper electrode), respectively. In this case, the second electrode may have a higher potential than the first electrode. The first electrode may form a cathode, and the second electrode may form an anode.

[0091] The plasma generating unit 250 may be configured to include a first high frequency power source 251 , a first transmission line 252 , a second high frequency power source 253 , and a second transmission line 254 .

[0092] The first high frequency power supply 251 applies radio frequency (RF) power to the first electrode. The first high frequency power supply 251 may be used as a plasma source to generate plasma in the chamber housing CH. A single first high frequency power supply 251 may be provided in the substrate processing apparatus 200, but the present disclosure is not limited thereto. Alternatively, a plurality of first high frequency power supplies 251 may be provided in the substrate processing apparatus 200, in which case the plurality of first high frequency power supplies 251 may be arranged in parallel on the first transmission line 252.

[0093] When a plurality of first high frequency power sources 251 are provided in the substrate processing apparatus 200, the plasma generating unit 250 may include a first matching network electrically connected to each of the plurality of first high frequency power sources 251. If frequency powers having different amplitudes are input from the plurality of first high frequency power sources 251, the first matching network may match and apply the frequency powers to the first electrode.

[0094] The first transmission line 252 may connect the first electrode and the ground source. The first high frequency power source 251 may be installed on the first transmission line 252, but the present disclosure is not limited thereto. The first transmission line 252 may also connect the first electrode and the first high frequency power source 251. For example, the first transmission line 252 may be set as an RF rod.

[0095] Despite Figure 4 Although not shown, a first impedance matching circuit for impedance matching may be provided on the first transmission line 252 connecting the first high frequency power source 251 and the first electrode. The first impedance matching circuit may be used as a lossless passive circuit and may enable maximum power to be transferred from the first high frequency power source 251 to the first electrode.

[0096] The second high frequency power supply 253 applies RF power to the second electrode. The second high frequency power supply 253 can control the plasma characteristics in the chamber housing CH. For example, the second high frequency power supply 253 can adjust the ion bombardment energy in the chamber housing CH. A single second high frequency power supply 253 can be provided in the substrate processing device 200, but the present disclosure is not limited thereto. Alternatively, a plurality of second high frequency power supplies 253 can be provided in the substrate processing device 200, in which case the plurality of second high frequency power supplies 253 can be arranged in parallel on the second transmission line 254.

[0097] When a plurality of second high frequency power sources 253 are provided in the substrate processing apparatus 200, the plasma generating unit 250 may include a second matching network electrically connected to each of the plurality of second high frequency power sources 253. If frequency powers having different amplitudes are input from the plurality of second high frequency power sources 253, the second matching network may match and apply the frequency powers to the second electrode.

[0098] The second transmission line 254 may connect the first electrode and the ground source. The second high frequency power source 253 may be installed on the second transmission line 254.

[0099] Despite Figure 4 Although not shown, a second impedance matching circuit for impedance matching may be provided on the second transmission line 254 connecting the second high frequency power source 253 and the second electrode. The second impedance matching circuit may be used as a lossless passive circuit and may enable maximum power to be transferred from the second high frequency power source 253 to the second electrode.

[0100] Similar to the first high frequency power source 251 , the second high frequency power source 253 can control the plasma characteristics within the chamber housing CH.

[0101] The liner unit 260 (also referred to as a liner wall) protects the inside of the chamber housing CH from arc discharge generated during process gas excitation or from impurities generated during processing of the semiconductor substrate W. The liner unit 260 may be formed to cover the inner wall of the chamber housing CH.

[0102] The liner unit 260 may include a unit body 261 and a support ring 262 formed on the unit body 261. The support ring 262 may protrude from an upper portion of the unit body 261 in an outward direction (eg, a first direction D1) and may fix the unit body 261 to the chamber housing CH.

[0103] The baffle unit 270 exhausts unreacted gas and byproducts from the plasma process in the chamber housing CH. The baffle unit 270 may be installed in a space between the substrate support unit 210 and the inner wall of the chamber housing CH (or the liner unit 260) adjacent to the exhaust hole 201. The baffle unit 270 may be provided in a ring shape in the space between the substrate support unit 210 and the inner wall of the chamber housing CH.

[0104] The baffle unit 270 may include a plurality of slots penetrating the unit body of the baffle unit 270 in the vertical direction (or the third direction D3) to control the flow of the process gas in the chamber housing CH. In order to minimize damage or changes caused by radicals in the space where plasma is generated in the chamber housing CH, the baffle unit 270 may be formed of a material having etching resistance. For example, the baffle unit 270 may be formed of quartz.

[0105] The antenna unit 280 generates magnetic and electric fields in the chamber housing CH to excite the process gas into plasma. The antenna unit 280 may operate using RF power provided from the second high frequency power source 253. The antenna unit 280 may be arranged to cover an upper portion of the chamber housing CH.

[0106] Figure 6 2 is a first exemplary schematic diagram showing the configuration of the antenna unit 280 constituting the substrate processing apparatus 200. Figure 6 , the antenna unit 280 may be configured to include a first dielectric module 310 , an antenna module 320 , and a second dielectric module 330 , but the present disclosure is not limited thereto. Alternatively, the antenna unit 280 may include only the antenna module 320 .

[0107] The first dielectric module 310 may directly cover the upper portion of the chamber housing CH. The first dielectric module 310 may also cover the upper portion of the showerhead unit 240 and may cover the plasma region. In this case, the first dielectric module 310 may cover only a portion of the upper portion of the chamber housing CH and may be surrounded by the chamber housing CH, but the present disclosure is not limited thereto. Alternatively, the first dielectric module 310 may cover the entire upper portion of the chamber housing CH.

[0108] The first dielectric module 310 may be formed of an insulating material. For example, the first dielectric module 310 may include quartz or alumina (Al 2 O 3 ), and may be configured as a dielectric window having a predetermined dielectric constant. When viewed in the vertical direction (or the third direction D3), the first dielectric module 310 may have a cylindrical cross-sectional shape, but the present disclosure is not limited thereto. That is, the shape of the first dielectric module 310 may vary according to the overall shape of the substrate processing apparatus 200. In addition, when viewed in the horizontal direction (or the first direction D1 or the second direction D2), the first dielectric module 310 may be formed as a dome-type structure, but the present disclosure is not limited thereto. Alternatively, the first dielectric module 310 may be formed as a plate-type structure.

[0109] The antenna module 320 may be disposed on the first dielectric module 310. The antenna module 320 may be formed to have the same width as the first dielectric module 310. For example, if the first dielectric module 310 is formed to be surrounded by the cavity housing CH, the antenna module 320 may also be surrounded by the cavity housing CH.

[0110] However, the present disclosure is not limited thereto. Alternatively, the antenna module 320 may also be formed to have a different width from the first dielectric module 310. For example, the antenna module 320 may be formed to have a smaller width than the first dielectric module 310. In this example, the antenna module 320 may be surrounded by at least one of the first dielectric module 310 and the second dielectric module 330.

[0111] In order to generate plasma across the entire plasma region, the width of the antenna module 320 may be determined based on the width of the plasma region. Figure 7 is a first exemplary schematic diagram showing the relationship between the antenna module of the antenna unit and the plasma region. Figure 7 , in the horizontal direction (e.g., the first direction D1 or the second direction D2), the width W1 of the antenna module 320 may be greater than the width W2 of the plasma region PL, that is, W1>W2. In this case, the antenna module 320 may be formed to have the same width as the first dielectric module 310, but the present disclosure is not limited thereto. Alternatively, the antenna module 320 may be formed to have a smaller width than the first dielectric module 310.

[0112] Figure 8 is a second exemplary schematic diagram showing the relationship between the antenna module of the antenna unit and the plasma region. Figure 8 In the horizontal direction, the width W1 of the antenna module 320 may be the same as the width W2 of the plasma region PL, ie, W1=W2. In this case, the antenna module 320 may be formed to have a smaller width than the first dielectric module 310.

[0113] The antenna module 320 may be formed of a conductive material. The antenna module 320 may be formed of a first metal having conductivity, but the present disclosure is not limited thereto. Alternatively, the antenna module 320 may be formed by electroplating or coating a surface of a base material formed of a second metal with a first metal. The antenna module 320 may be formed as a cylindrical waveguide structure, but the shape of the antenna module 320 may vary according to the overall shape of the substrate processing device 200.

[0114] The antenna module 320 may include a plurality of slot pairs on the surface of the waveguide. In other words, the antenna module 320 may be configured as a slot antenna. For example, the antenna module 320 may be configured as a RLSA. Fig. 9 is an exemplary schematic diagram showing the configuration of an antenna module of an antenna unit. Fig. 9 , a plurality of slot pairs 322 may be radially arranged from a central region 323 of the slot plate 321. The slot pairs 322 may be arranged around the central region 323 of the slot plate 321 in a concentric circle manner.

[0115] Fig.10 is a first exemplary schematic diagram showing the shape of each slot pair constituting the antenna module, and Fig.11 is a second exemplary schematic diagram showing the shape of each slot pair constituting the antenna module. Fig.10 and Fig.11 , the groove pair 322 may consist of two grooves, namely a first groove 410 and a second groove 420. The first groove 410 and the second groove 420 may intersect each other.

[0116] Based on the intersection 413 between the first groove 410 and the second groove 420, the first groove 410 may be divided into a first portion 411 and a second portion 412. The first portion 411 may be positioned on one side of the intersection 413. The second portion 412 may be positioned on the other side of the intersection 413.

[0117] refer to Fig.10 , the length L1 of the first portion 411 may be equal to the length L2 of the second portion 412, that is, L1=L2. Alternatively, referring to Fig.11 , the length L1 of the first portion 411 may be different from the length L2 of the second portion 412, that is, L1≠L2. For example, the length L1 of the first portion 411 may be relatively greater than the length L2 of the second portion 412, that is, L1>L2, but the present disclosure is not limited thereto. Alternatively, the length L1 of the first portion 411 may be relatively less than the length L2 of the second portion 412, that is, L1 <L2。

[0118] refer to Fig.10 and Fig.11 , based on the intersection 413, the second groove 420 may be divided into a third portion 421 and a fourth portion 422. The third portion 421 may be positioned on one side of the intersection 413. The fourth portion 422 may be positioned on the other side of the intersection 413.

[0119] Despite Fig.10 and Fig.11 Although not shown in the figure, the length of the third portion 421 may be the same as the length of the fourth portion 422. Alternatively, the length of the third portion 421 may be different from the length of the fourth portion 422.

[0120] Fig.12 is a third exemplary schematic diagram showing the shape of each slot pair constituting the antenna module. Fig.12 When the first groove 410 and the second groove 420 intersect each other, the angle θ1 formed between the first portion 411 of the first groove 410 and the third portion 421 of the second groove 420 may be the same as the angle θ2 formed between the first portion 411 of the first groove 410 and the fourth portion 422 of the second groove 420, that is, θ1=θ2.

[0121] Fig.13 is a fourth exemplary schematic diagram showing the shape of each slot pair constituting the antenna module. Fig.13 , the angle θ1 may be different from the angle θ2, that is, θ1≠θ2. For example, the angle θ1 may be relatively larger than the angle θ2, that is, θ1>θ2, but the present disclosure is not limited thereto. Alternatively, the angle θ1 may be relatively smaller than the angle θ2, that is, θ1<θ2.

[0122] Heretofore, a case has been described in which each of the slot pairs 322 formed in the slot plate 321 consists of two slots, but the present disclosure is not limited thereto. Alternatively, each of the slot pairs 322 may consist of three or more slots.

[0123] Fig.14 is a fifth exemplary schematic diagram showing the shape of each slot pair constituting the antenna module. Fig.14 Each slot pair 322 may include three slots, namely a first slot 410, a second slot 420, and a third slot 430. The first slot 410, the second slot 420, and the third slot 430 may intersect each other. The first slot 410, the second slot 420, and the third slot 430 may intersect each other at a single intersection 441.

[0124] The first groove 410 , the second groove 420 , and the third groove 430 may cross each other at a plurality of crossing points. Fig.15 is a sixth exemplary schematic diagram showing the shape of each slot pair constituting the antenna module. Fig.15 , the first groove 410, the second groove 420, and the third groove 430 may intersect each other at three intersections (i.e., the first intersection 442, the second intersection 443, and the third intersection 444). The first intersection 442, the second intersection 443, and the third intersection 444 are not set as common intersections of all the first grooves 410, the second grooves 420, and the third grooves 430. The first intersection 442 is used as an intersection between the first groove 410 and the second groove 420, the second intersection 443 is used as an intersection between the first groove 410 and the third groove 430, and the third intersection 444 is used as an intersection between the second groove 420 and the third groove 430.

[0125] The slot pairs 322 formed in the slot plate 321 may be arranged to have a predetermined shape with respect to a direction of propagating waves and / or a direction of reflected waves. Fig.16 FIG. 1 is a first exemplary schematic diagram showing an arrangement structure of a plurality of slot pairs in a slot board constituting an antenna module. Fig.16 , when each of the first slot pair 322a, the second slot pair 322b, the third slot pair 322c, and the fourth slot pair 322d consists of two slots (i.e., the first slot 410 and the second slot 420), the first slot pair 322a, the second slot pair 322b, the third slot pair 322c, and the fourth slot pair 322d may be arranged to form an X shape with respect to the direction of the propagation wave 510 and the direction of the reflection wave 520. That is, the first slot pair 322a, the second slot pair 322b, the third slot pair 322c, and the fourth slot pair 322d may be arranged in a straight line X shape from the central area 323 of the slot plate 321 toward the edge of the slot plate 321.

[0126] Fig.17 is a second exemplary schematic diagram showing the arrangement structure of a plurality of slot pairs in a slot plate constituting an antenna module. Fig.17, the first slot pair 322a, the second slot pair 322b, the third slot pair 322c, and the fourth slot pair 322d may be arranged to form a “+” shape with respect to the direction of the propagation wave 510 and the direction of the reflection wave 520. That is, the first slot pair 322a, the second slot pair 322b, the third slot pair 322c, and the fourth slot pair 322d may be linearly arranged in a “+” shape from the central area 323 of the slot plate 321 toward the edge of the slot plate 321.

[0127] As previously described, the slot pairs 322 may be radially arranged from the central region 323 of the slot plate 321 to form concentric circles around the central region 323 .

[0128] Fig.18 is a third exemplary schematic diagram showing an arrangement structure of a plurality of slot pairs in a slot board constituting an antenna module. Fig.18 , the first group 610 may be arranged around the central area 323 of the slot plate 321, the second group 620 may be arranged outside the first group 610, and the Nth group 630 may be arranged outside the previous group away from the central area 323 of the slot plate 321. Here, N is a natural number. Each of the first group 610, the second group 620 and the Nth group 630 may include a plurality of slot pairs.

[0129] The slot pairs 322 may be formed in the slot plate 321 so as not to overlap each other. That is, the slot pairs 322 belonging to the same group may be formed so as not to overlap each other. In addition, the slot pairs 322 belonging to different groups may also be formed so as not to overlap each other.

[0130] The number of slot pairs 322 included in the first group 610 may be different from the number of slot pairs 322 included in the second group 620. That is, each of the first group 610, the second group 620, and the Nth group 630 may include a different number of slot pairs 322.

[0131] refer to Fig.18 , the number of slot pairs 322 included in the second group 620 may be greater than the number of slot pairs 322 included in the first group 610. In other words, the number of slot pairs 322 included in each of the first group 610, the second group 620, and the Nth group 630 may increase from the first group 610 to the second group 620 to the Nth group 630.

[0132] When different numbers of slot pairs 322 are included in each of the first group 610 , the second group 620 , and the Nth group 630 , an interval G1 between two adjacent slot pairs 322 in the first group 610 may be the same as an interval G2 between two adjacent slot pairs 322 in the second group 620 .

[0133] refer to Fig.18, the interval G2 may be the same as the interval G1, ie, G2=G1. In other words, the interval between adjacent slot pairs 322 in each of the first group 610, the second group 620, and the Nth group 630 may be the same from the first group 610 to the Nth group 630.

[0134] However, the present disclosure is not limited thereto. Alternatively, the intervals between adjacent slot pairs 322 in each of the first group 610, the second group 620, and the Nth group 630 may be different from the first group 610 to the second group 620 to the Nth group 630. Still alternatively, the intervals between adjacent slot pairs 322 may be the same in some of the first group 610, the second group 620, and the Nth group 630, and may be different in other groups.

[0135] The size of the slot pairs 322 included in each of the first group 610, the second group 620, and the N-th group 630 may be the same. In other words, the size of the slot pairs 322 in the first group 610 may be the same as the size of the slot pairs 322 in the second group 620. In addition, the size of the slot pairs 322 in the first group 610 may also be the same as the size of the slot pairs 322 included in the N-th group 630.

[0136] However, the present disclosure is not limited thereto. Alternatively, the size of the slot pairs 322 included in each of the first group 610 , the second group 620 , and the Nth group 630 may be different from the first group 610 to the second group 620 to the Nth group 630 .

[0137] Fig.19 3 is a fourth exemplary schematic diagram showing an arrangement structure of a plurality of slot pairs in a slot board constituting an antenna module. For example, the size of the slot pairs 322 included in each of the first group 610, the second group 620, and the Nth group 630 may increase from the first group 610 to the second group 620 to the Nth group 630. Fig.19 , the size of the slot pairs 322 in the second group 620 may be greater than the size of the slot pairs 322 in the first group 610. In addition, the size of the slot pairs 322 in the Nth group 630 may be greater than the size of the slot pairs 322 in the second group 620.

[0138] Already referenced Figures 9 to 19 Various embodiments of the antenna module 320 are described. Hereinafter, the effect of the antenna module 320 will be described.

[0139] In order to form a large area high density plasma, an antenna unit including a slot antenna may be used as an electrode. For example, an antenna unit including a RLSA may be used as an electrode. However, since the RLSA is developed as a communication antenna for long distance radiation, the RLSA is not suitable for the environment in the process chamber where plasma is generated at an ultra-close distance. In order to solve this problem, an antenna unit 280 including an antenna module 320 may be provided.

[0140] Fig. 20 is a first exemplary schematic diagram showing the effect of the antenna unit according to an embodiment of the present disclosure. Fig. 20 , the microwave 530 is incident on the central area 323 of the slot plate 321, and may be radially radiated along the radial direction of the slot plate 321. In other words, when the microwave 530 is incident on the central area 323 of the slot plate 321, its propagation wave 510 may travel from the central area 323 of the slot plate 321 toward the end 324 of the slot plate 321.

[0141] As described above, the antenna module 320 may be surrounded by the cavity housing CH. That is, the end 324 of the slot plate 321 is not exposed to the outside and may be enclosed by the cavity housing CH. Therefore, the propagation wave 510 is reflected at the end 324 of the slot plate 321, and its reflected wave 520 may travel from the end 324 toward the central area 323 of the slot plate 321. The direction of the reflected wave 520 may be opposite to the direction of the propagation wave 510.

[0142] The propagation wave 510 and the reflection wave 520 may interfere with each other. Due to the interference between the propagation wave 510 and the reflection wave 520, a standing wave may be generated in the antenna module 320. Alternatively, a standing wave may be generated in the second dielectric module 330 disposed on the antenna module 320.

[0143] Due to the mutual interference of the propagating wave 510 and the reflected wave 520, an overlap may occur between the propagating wave 510 and the reflected wave 520. In this case, constructive interference may occur when a peak of the propagating wave 510 is added to a peak of the reflected wave 520 or a trough of the propagating wave 510 is added to a trough of the reflected wave 520. In addition, destructive interference may occur when a peak of the propagating wave 510 meets a trough of the reflected wave 520, and vice versa.

[0144] Considering the mutual interference between the propagation wave 510 and the reflection wave 520, the first slot pair 322a, the second slot pair 322b, the third slot pair 322c, and the fourth slot pair 322d may be arranged in a row along a direction from the central area 323 of the slot plate 321 to the end 324 of the slot plate 321. Preferably, the first slot pair 322a, the second slot pair 322b, the third slot pair 322c, and the fourth slot pair 322d may be arranged in a row in view of the electric field (E field) of the standing wave to maximize the radiation efficiency.

[0145] The first slot pair 322a, the second slot pair 322b, the third slot pair 322c, and the fourth slot pair 322d may be arranged at regular intervals to achieve maximum radiation efficiency. The first slot pair 322a, the second slot pair 322b, the third slot pair 322c, and the fourth slot pair 322d may be spaced apart from each other by their respective distances from the end 324 of the slot plate 321 (i.e., the outer end of the slot plate 321), which are calculated according to the following equation: distance = ((1 / 2*n)+1 / 4)*λg, where λg refers to the wavelength within the waveguide, and n is 0 or a positive integer (or a natural number).

[0146] For example, the fourth slot pair 322d may be arranged at a distance of 1 / 4λg (=((1 / 2*0)+1 / 4)*λg) from the end 324 of the slot plate 321, the third slot pair 322c may be arranged at a distance of 3 / 4λg (=((1 / 2*1)+1 / 4)*λg) from the end 324 of the slot plate 321, the second slot pair 322b may be arranged at a distance of 5 / 4λg (=((1 / 2*2)+1 / 4)*λg) from the end 324 of the slot plate 321, and the first slot pair 322a may be arranged at a distance of 7 / 4λg (=((1 / 2*3)+1 / 4)*λg) from the end 324 of the slot plate 321.

[0147] However, the present disclosure is not limited thereto. Alternatively, the first slot pair 322a, the second slot pair 322b, the third slot pair 322c, and the fourth slot pair 322d may be arranged by selectively applying a value of n according to the size of the slot.

[0148] For example, the fourth slot pair 322d may be arranged at a distance of 3 / 4λg (=((1 / 2*1)+1 / 4)*λg) from the end 324 of the slot plate 321, and the second slot pair 322b may be arranged at a distance of 9 / 4λg (=((1 / 2*4)+1 / 4)*λg) from the central area 323 of the slot plate 321.

[0149] Fig.21 3 is a second exemplary schematic diagram showing the effect of the antenna unit according to an embodiment of the present disclosure. The first slot pair 322a, the second slot pair 322b, the third slot pair 322c, and the fourth slot pair 322d may be disposed at points where the electric field (E field) of the standing wave 540 reaches its maximum and minimum values. Fig.21 , the first slot pair 322 a and the third slot pair 322 c may be disposed at the trough of the standing wave 540 , and the second slot pair 322 b and the fourth slot pair 322 d may be disposed at the peak of the standing wave 540 .

[0150] Alternatively, the second slot pair 322b and the fourth slot pair 322d may be disposed only at a point where the electric field (E field) of the standing wave 540 reaches its maximum value. For example, the first slot pair 322a, the second slot pair 322b, the third slot pair 322c, and the fourth slot pair 322d may all be disposed at the crest of the standing wave 540. In another example, the second slot pair 322b and the fourth slot pair 322d may be disposed at the crest of the standing wave 540, and the first slot pair 322a and the third slot pair 322c may not be formed in the slot plate 321.

[0151] By arranging the slot pair 322 at a point where the electric field (E field) of the standing wave 540 reaches its maximum value, the electric field (E field) can be maximized during antenna radiation, and as a result, the efficiency of antenna radiation and the intensity of plasma can be improved. In particular, by positioning the second slot pair 322b and the fourth slot pair 322d at the peak of the standing wave 540 where the electric field (E field) reaches its maximum value, the radiation efficiency at the second slot pair 322b and the fourth slot pair 322d can be maximized, and the intensity of plasma can be enhanced accordingly.

[0152] Refer to Figure 6 , the second dielectric module 330 may be disposed on the antenna module 320. The second dielectric module 330 may be formed to cover only the top surface of the antenna module 320, but the present disclosure is not limited thereto. Alternatively, the second dielectric module 330 may be formed to cover both the top surface and the side surface of the antenna module 320. The second dielectric module 330 may be formed to have the same width as the first dielectric module 310.

[0153] The second dielectric module 330 may be formed of an insulating material. For example, the second dielectric module 330 may include quartz or Al 2 O 3 , and may be set as a dielectric window having a predetermined dielectric constant. When viewed in a vertical direction (e.g., a third direction D3), the second dielectric module 330 may have a cylindrical cross-sectional shape, but the present disclosure is not limited thereto. That is, the shape of the second dielectric module 330 may vary according to the overall shape of the substrate processing apparatus 200. In addition, when viewed in a horizontal direction (e.g., the first direction D1 or the second direction D2), the second dielectric module 330 may be formed to have a flat shape, but the present disclosure is not limited thereto. Alternatively, the second dielectric module 330 may be formed to have a dome shape.

[0154] Fig. 22 2 is a second exemplary schematic diagram showing an antenna unit constituting a substrate processing apparatus. The antenna unit 280 may be configured to include a temperature control module 340 in addition to the first dielectric module 310, the antenna module 320, and the second dielectric module 330. Fig. 22The temperature control module 340 may be disposed on the second dielectric module 330. For example, the temperature control module 340 may be disposed as a cooling plate. The temperature control module 340 may be grounded.

[0155] The embodiments of the present disclosure have been described above with reference to the accompanying drawings, but the present disclosure is not limited thereto and can be implemented in various different forms. It will be understood that the present disclosure can be implemented in other specific forms without changing the technical concept or gist of the present disclosure. Therefore, it should be understood that the embodiments set forth herein are illustrative and not restrictive in all aspects.

Claims

1. A substrate processing device, comprising: Cavity housing; a substrate supporting unit, disposed in the chamber housing and supporting a substrate; a showerhead unit disposed in the chamber housing and configured to provide a process gas for processing the substrate onto the substrate; a plasma generating unit including a high frequency power source and configured to generate plasma in an inner space of the chamber housing using the process gas and power provided by the high frequency power source; as well as an antenna unit connected to the high frequency power source and configured to operate as an electrode for generating the plasma, in, The antenna unit includes a plurality of slot pairs formed in a slot plate, and The slot pairs are arranged radially from a central region of the slot plate.

2. The substrate processing apparatus according to claim 1, wherein: The slot pairs are arranged in view of interference between microwaves moving from a central region of the slot plate toward outer ends of the slot plate and reflected waves of the microwaves.

3. The substrate processing apparatus according to claim 1, wherein: The slot pairs are arranged in view of electric fields generated by both microwaves moving from a central region of the slot plate toward outer ends of the slot plate and standing waves generated by reflected waves of the microwaves.

4. The substrate processing apparatus according to claim 1, wherein: The slot pairs are provided at positions related to the crests of microwaves moving from the central region of the slot plate toward the outer ends of the slot plate and the crests of standing waves generated by reflected waves of the microwaves.

5. The substrate processing apparatus according to claim 1, wherein: The slot pairs increase in size in a direction from a central region of the slot plate to outer ends of the slot plate.

6. The substrate processing apparatus according to claim 1, wherein: The slot pairs are arranged in a row at regular intervals from a central region of the slot plate to outer ends of the slot plate.

7. The substrate processing apparatus according to claim 6, wherein: The slot pairs are arranged in a row at intervals of their respective distances from the outer ends of the slot plates, the distances being calculated by the following equation: The distance = ((1 / 2*n)+1 / 4)*λg, where λg refers to the wavelength within the waveguide, and n is 0 or a positive integer.

8. The substrate processing apparatus according to claim 6, wherein: The groove pairs are arranged in rows in the same shape.

9. The substrate processing apparatus according to claim 8, wherein: The slot pairs are arranged in a row to form an X shape.

10. The substrate processing apparatus according to claim 1, wherein: Each of the slot pairs includes a first slot and a second slot, and The first groove intersects with the second groove.

11. The substrate processing apparatus according to claim 10, wherein: The first groove is divided into a first portion and a second portion based on an intersection point between the first groove and the second groove, and The length of the first portion is the same as the length of the second portion.

12. The substrate processing apparatus according to claim 11, wherein: The second groove is divided into a third portion and a fourth portion based on the intersection between the first groove and the second groove, and The angle between the first portion and the third portion is the same as the angle between the first portion and the fourth portion.

13. The substrate processing apparatus according to claim 1, wherein: The slot pairs are arranged in concentric circles around a central area of ​​the slot plate.

14. The substrate processing apparatus according to claim 13, wherein: A distance between two slot pairs spaced apart from the central region of the slot plate by a first distance is equal to a distance between two slot pairs spaced apart from the central region of the slot plate by a second distance.

15. The substrate processing apparatus according to claim 13, wherein: The number of slot pairs spaced a first distance from the central region of the slot plate is different than the number of slot pairs spaced a second distance from the central region of the slot plate.

16. The substrate processing apparatus according to claim 1, wherein: The antenna unit comprises: A first dielectric module, configured to serve as a top cover of the chamber housing; an antenna module, disposed on the first dielectric module and comprising the slot plate and the slot pair; and The second dielectric module is arranged on the antenna module.

17. The substrate processing apparatus according to claim 16, wherein: The inner space of the chamber housing includes a plasma region in which free radicals are generated based on the process gas, and The size of the antenna module is equal to or larger than the size of the plasma region.

18. The substrate processing apparatus according to claim 16, wherein: The antenna unit further includes a temperature control module disposed on the second dielectric module, and The temperature control module is grounded.

19. An antenna unit installed in a substrate processing apparatus for processing a substrate using plasma to operate as an electrode, the antenna unit comprising: A first dielectric module configured to serve as a top cover of the cavity housing; an antenna module disposed on the first dielectric module and comprising a slot plate and a plurality of slot pairs formed in the slot plate; as well as A second dielectric module is arranged on the antenna module, Wherein, the slot pairs are arranged radially from a central area of ​​the slot plate.

20. A substrate processing device comprising: Cavity housing; a substrate supporting unit disposed in the chamber housing and configured to support a substrate; a showerhead unit disposed in the chamber housing and configured to provide a process gas for processing the substrate onto the substrate; a plasma generating unit including a high frequency power source and configured to generate plasma in an inner space of the chamber housing using the process gas and power provided by the high frequency power source; as well as an antenna unit connected to the high frequency power source and configured to operate as an electrode for generating the plasma, in, The antenna unit includes a plurality of slot pairs formed in a slot plate, The slot pairs are arranged radially from a central region of the slot plate, Some of the slot pairs are disposed at positions related to crests of microwaves moving from a central region of the slot plate toward outer ends of the slot plate and crests of standing waves generated by reflected waves of the microwaves, and The slot pairs are arranged in a row at intervals of their respective distances from the outer ends of the slot plates, the distances being calculated by the following equation: The distance = ((1 / 2*n)+1 / 4)*λg, where λg refers to the wavelength within the waveguide, and n is 0 or a positive integer.

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