Micro light emitting diode device package structure, package method and display device

Abstract

The application provides a micro light emitting diode device packaging structure, a packaging method and a display device. The packaging structure comprises a micro light emitting diode device, a packaging substrate and a light-transmitting film structure. The micro light emitting diode device comprises a micro light emitting diode chip and a driving chip electrically connected. The packaging substrate comprises a bearing plate and a circuit board connected. The micro light emitting diode chip and the driving chip are sequentially stacked on the bearing plate. The circuit board is electrically connected with the driving chip through an electrical connector. The light-transmitting film structure continuously covers the surface and the outer periphery of the micro light emitting diode device and at least part of the surface of the packaging substrate. Therefore, the packaging structure has better packaging reliability and light-transmitting display performance.

Description

Technical Field

[0001] This application relates to the field of semiconductor light-emitting technology, specifically to a micro light-emitting diode device packaging structure, packaging method, and display device. Background Technology

[0002] Micro-LED (Micro-Light Emitting Diode) display technology miniaturizes and arrays the traditional LED (Light Emitting Diode) structure, and uses CMOS (Complementary Metal Oxide Semiconductor) or TFT (Thin Film Transistor) to create the driving circuit, thereby achieving addressing control and individual driving of each pixel.

[0003] Micro-LEDs require encapsulation after fabrication. The encapsulation methods for Micro-LEDs in related technologies need improvement. Summary of the Invention

[0004] The purpose of this application is to provide a micro light-emitting diode device packaging structure, packaging method and display device.

[0005] In a first aspect, this application provides a miniature light-emitting diode device packaging structure, including:

[0006] A miniature light-emitting diode device, comprising an electrically connected miniature light-emitting diode chip and a driver chip;

[0007] An encapsulation substrate includes a carrier plate and a circuit board connected to each other. The micro light-emitting diode chip and the driver chip are sequentially stacked on the carrier plate. The circuit board is electrically connected to the driver chip via an electrical connector.

[0008] A light-transmitting film structure continuously covers the surface and outer periphery of the micro light-emitting diode device, as well as at least a portion of the surface of the packaging substrate.

[0009] Optionally, the packaging structure further includes:

[0010] An encapsulating colloid is used to encapsulate the electrical connector; wherein...

[0011] The light-transmitting film structure includes a first part, a second part, and a third part connected together. The first part covers a portion of the surface of the carrier plate, the second part covers the surface and outer periphery of the micro light-emitting diode device, and the third part covers the surface and outer periphery of the encapsulating colloid. Alternatively, in the stacking direction of the micro light-emitting diode device and the encapsulating substrate, the third part is disposed between the encapsulating substrate and the encapsulating colloid.

[0012] Optionally, the carrier plate includes a first end and a second end disposed opposite to each other; the circuit board is provided with a first terminal structure electrically connected to the electrical connector, the first terminal structure being stacked and connected to the first end; wherein,

[0013] The encapsulation structure includes an encapsulation region extending from the first terminal structure to the second end, and the light-transmitting film structure covers the surface and outer periphery of the encapsulation region.

[0014] Optionally, the packaging structure further includes:

[0015] An encapsulating colloid is used to encapsulate the electrical connector; wherein...

[0016] The light-transmitting film structure covers the encapsulating colloid; or, in the stacking direction of the micro-light-emitting diode device and the encapsulating substrate, a portion of the light-transmitting film structure is disposed between the encapsulating substrate and the encapsulating colloid.

[0017] Optionally, the light-transmitting film structure includes an inorganic film layer structure.

[0018] Optionally, the thickness of the light-transmitting film structure is greater than 0 nanometers and less than or equal to 200 nanometers.

[0019] Optionally, the light-transmitting film structure is a single-layer film structure, and the material of the light-transmitting film structure includes aluminum oxide or silicon dioxide.

[0020] Optionally, the light-transmitting film structure is a multilayer film structure.

[0021] Optionally, in the stacking direction of the micro light-emitting diode device and the packaging substrate, the light-transmitting film structure includes at least one set of stacked first film layers and second film layers;

[0022] The first film layer is located between the micro light-emitting diode device and the second film layer, and the refractive index of the first film layer is greater than that of the second film layer.

[0023] Optionally, the light-transmitting film structure is a double-layer film structure, wherein the first film layer is made of tantalum pentoxide and the second film layer is made of silicon dioxide.

[0024] Optionally, the light-transmitting film structure is a four-layer film structure, wherein the first film layer is made of zirconium pentoxide and the second film layer is made of aluminum oxide.

[0025] Optionally, the micro LED chip includes a light-emitting area and a non-light-emitting area;

[0026] The packaging structure further includes:

[0027] A light-shielding structure is disposed on the side of the light-transmitting film structure opposite to the micro light-emitting diode chip, and the orthogonal projection of the light-shielding structure onto the light-transmitting film structure covers the orthogonal projection of the non-light-emitting area onto the light-transmitting film structure.

[0028] Optionally, the packaging structure further includes:

[0029] The reinforcing colloid is disposed on the side of the circuit board away from the micro light-emitting diode device, in a region adjacent to the connection area between the circuit board and the carrier plate.

[0030] Optionally, the packaging substrate further includes reinforcing sheets and a second terminal structure disposed on opposite sides of the circuit board, wherein the projection of the reinforcing sheets on the circuit board covers the projection of the second terminal structure on the circuit board.

[0031] Secondly, this application also provides a method for packaging a miniature light-emitting diode device, comprising:

[0032] A miniature light-emitting diode device is provided, the miniature light-emitting diode device comprising a miniature light-emitting diode chip and a driver chip electrically connected;

[0033] A packaging substrate is provided, the packaging substrate including a carrier plate and a circuit board connected together;

[0034] The micro light-emitting diode chip and the driver chip are stacked sequentially on the carrier plate, and the circuit board is electrically connected to the driver chip through an electrical connector.

[0035] A continuous light-transmitting film structure is formed on the surface and outer periphery of the micro light-emitting diode device, as well as on at least a portion of the surface of the packaging substrate, thereby forming a micro light-emitting diode device packaging structure.

[0036] Optionally, prior to the step of forming a continuous light-transmitting film structure on the surface and outer periphery of the micro-light-emitting diode device and at least a portion of the surface of the packaging substrate, the packaging method further includes:

[0037] Forming an encapsulating colloid encapsulating the electrical connector;

[0038] The formation of a continuous light-transmitting film structure on the surface and outer periphery of the micro-light-emitting diode device, and on at least a portion of the surface of the packaging substrate, includes:

[0039] A continuous light-transmitting film structure is formed on a portion of the surface of the carrier plate, the surface and outer periphery of the micro light-emitting diode device, and the surface and outer periphery of the encapsulating colloid, thus forming a micro light-emitting diode device encapsulation structure.

[0040] Optionally, forming a continuous light-transmitting film structure on the surface and outer periphery of the micro-light-emitting diode device, and on at least a portion of the surface of the packaging substrate, and forming a micro-light-emitting diode device packaging structure, includes:

[0041] A continuous light-transmitting film structure is formed on the surface and outer periphery of the micro light-emitting diode device, as well as on at least a portion of the surface of the packaging substrate;

[0042] An encapsulating colloid is formed to encapsulate the electrical connector, and the encapsulating colloid covers part of the light-transmitting film structure, thus forming a micro light-emitting diode device encapsulation structure.

[0043] Optionally, the carrier plate includes a first end and a second end disposed opposite to each other; the circuit board is provided with a first terminal structure electrically connected to the electrical connector, the first terminal structure being stacked and connected to the first end;

[0044] The formation of a continuous light-transmitting film structure on the surface and outer periphery of the micro-light-emitting diode device, and on at least a portion of the surface of the packaging substrate, includes:

[0045] The transparent film structure covers the surface and outer periphery of the encapsulation area extending from the first terminal structure to the second end.

[0046] Optionally, the light-transmitting film structure includes an inorganic film layer structure.

[0047] Optionally, the thickness of the light-transmitting film structure is greater than 0 nanometers and less than or equal to 200 nanometers.

[0048] Optionally, the light-transmitting film structure is a single-layer film structure, and the material of the light-transmitting film structure includes aluminum oxide or silicon dioxide.

[0049] Optionally, the light-transmitting film structure is a multilayer film structure.

[0050] Optionally, in the stacking direction of the micro light-emitting diode device and the packaging substrate, the light-transmitting film structure includes at least one set of stacked first film layers and second film layers;

[0051] The first film layer is located between the micro light-emitting diode device and the second film layer, and the refractive index of the first film layer is greater than that of the second film layer.

[0052] Optionally, the light-transmitting film structure is a double-layer film structure, wherein the first film layer is made of tantalum pentoxide and the second film layer is made of silicon dioxide.

[0053] Optionally, the light-transmitting film structure is a four-layer film structure, wherein the first film layer is made of zirconium pentoxide and the second film layer is made of aluminum oxide.

[0054] Optionally, the micro LED chip includes a light-emitting area and a non-light-emitting area;

[0055] After the step of forming a continuous light-transmitting film structure on the surface and outer periphery of the micro-light-emitting diode device and at least a portion of the surface of the packaging substrate, the packaging method further includes:

[0056] A light-shielding structure is provided on the side of the light-transmitting film structure opposite to the micro light-emitting diode chip, and the positive projection of the light-shielding structure on the light-transmitting film structure covers the positive projection of the non-light-emitting area on the light-transmitting film structure.

[0057] Thirdly, this application also provides a display device, including the packaging structure described above; or, including a packaging structure prepared by the packaging method described above.

[0058] Based on the above technical solution, the light-transmitting film structure of this application covers the surface and outer periphery of the micro-light-emitting diode device, as well as at least a portion of the surface of the packaging substrate. This light-transmitting film structure reduces the adverse effects of moisture and other objects on the micro-light-emitting diode device, providing encapsulation and protection, and improving the packaging reliability. Simultaneously, the light-transmitting film structure has high light transmittance, enhancing the light transmission performance of the micro-light-emitting diode device. Therefore, this application uses a light-transmitting film structure to encapsulate the micro-light-emitting diode device, resulting in a packaging structure with superior packaging reliability and light transmission display performance. Attached Figure Description

[0059] To more clearly illustrate the technical solutions in this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are merely some embodiments of this application. Those skilled in the art can obtain other drawings based on these drawings without any creative effort.

[0060] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings, wherein the same reference numerals in the following description denote the same parts.

[0061] Figure 1 This is a schematic diagram of a first type of packaging structure provided in an embodiment of this application;

[0062] Figure 2 for Figure 1 A schematic diagram of the packaging structure from another direction is shown;

[0063] Figure 3 This is a schematic diagram of a light-transmitting film structure provided in an embodiment of this application;

[0064] Figure 4 A schematic diagram of the refractive index of the first and second film layers of the transparent film structure provided in the embodiments of this application under different schemes;

[0065] Figure 5 This is a schematic diagram of the structure of a miniature light-emitting diode chip provided in an embodiment of this application;

[0066] Figure 6 A schematic diagram of the structure of a driver chip provided in an embodiment of this application;

[0067] Figure 7 A schematic diagram illustrating the bonding connection between the driver chip and the micro light-emitting diode chip provided in the embodiments of this application;

[0068] Figure 8 This is a schematic diagram of the structure of a miniature light-emitting diode device provided in an embodiment of this application;

[0069] Figure 9 This is a schematic diagram of the structure of a packaging substrate provided in an embodiment of this application;

[0070] Figure 10 A schematic diagram illustrating a connection between a packaging substrate and a miniature light-emitting diode device provided in an embodiment of this application;

[0071] Figure 11 This is a schematic diagram of the structure of the packaging substrate provided in this application after connecting the micro light-emitting diode device and removing the first substrate;

[0072] Figure 12 This is a schematic diagram of the electrical connection between the circuit board and the driver chip according to an embodiment of this application;

[0073] Figure 13 for Figure 12 A schematic diagram of the structure from another direction;

[0074] Figure 14 for Figure 12 The diagram shows a structural design after the encapsulating colloid is filled.

[0075] Figure 15for Figure 14 A schematic diagram of the structure from another direction is shown.

[0076] Figure 16 A partial schematic diagram of the packaging structure provided in an embodiment of this application;

[0077] Figure 17 This is a schematic diagram of a second type of packaging structure provided in the embodiments of this application;

[0078] Figure 18 for Figure 17 A schematic diagram of the packaging structure from another direction is shown;

[0079] Figure 19 This is a schematic diagram of another orientation of the packaging structure provided in the embodiments of this application;

[0080] Figure 20 This is a schematic diagram of a first embodiment of the encapsulation method provided in this application;

[0081] Figure 21 This is a second flowchart illustrating the encapsulation method provided in the embodiments of this application;

[0082] Figure 22 This is a schematic diagram of a display device provided in an embodiment of this application.

[0083] The reference numerals in the attached figures are as follows:

[0084] 10. Packaging structure; 20. Display device; 100. Packaging substrate; 200. Miniature light-emitting diode device; 300. Light-transmitting film structure; 400. Electrical connector; 500. Encapsulating colloid; 600. Light-shielding structure; 700. Reinforcing colloid; 800. Reinforcing sheet; 110. Carrier plate; 120. Circuit board; 210. Miniature light-emitting diode chip; 220. Driver chip; 230. Filling structure; 240. Die-bonding structure; 310. First film layer; 320. Second film layer; 111. First end; 112. Second end; 1 21. First terminal structure; 122. Second terminal structure; 123. Bonding area; 201. Light-emitting area; 202. Non-light-emitting area; 211. First substrate; 212. First semiconductor layer; 213. Light-emitting layer; 214. Second semiconductor layer; 215. First electrode layer; 216. Second electrode layer; 217. Solder joint structure; 221. Second substrate; 222. Driving circuit; 223. Driving pad; 224. Bonding area; 301. Packaging area; 311. First part; 312. Second part; 313. Third part. Detailed Implementation

[0085] The following will refer to the appendices in this application. Figure 1 To be continued Figure 22The technical solutions in this application are clearly and completely described in conjunction with the embodiments. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.

[0086] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0087] The following detailed description is based on specific embodiments. It should be noted that the embodiments of this application can be presented in various forms, and some examples will be described below.

[0088] Please refer to Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of a first structure of the miniature light-emitting diode device packaging structure 10 (hereinafter referred to as packaging structure 10) provided in the embodiments of this application. Figure 2 for Figure 1 The diagram shows another view of the encapsulation structure 10. The encapsulation structure 10 includes an encapsulation substrate 100, a miniature light-emitting diode device 200, and a light-transmitting film structure 300.

[0089] The encapsulation substrate 100 supports a micro-LED device 200 and a light-transmitting film structure 300. The micro-LED device 200 includes a micro-LED chip 210 and a driver chip 220 electrically connected. The encapsulation substrate 100 includes a carrier plate 110 and a circuit board 120 connected to each other. The carrier plate 110 is disposed and connected to the side of the driver chip 220 facing away from the micro-LED chip 210. The micro-LED chip 210 and the driver chip 220 are sequentially stacked on the carrier plate 110. The circuit board 120 is electrically connected to the driver chip 220 via an electrical connector 400. The encapsulation substrate 100 and the micro-LED device 200 are connected to form a micro-LED module. The light-transmitting film structure 300 is disposed on the surface and part of the outer periphery of the micro-LED module. The light-transmitting film structure 300 is an integral structure and continuously covers the surface and outer periphery of the micro-LED device 200, as well as at least part of the surface of the encapsulation substrate 100.

[0090] It is understood that the surface and outer periphery of the micro-LED device 200 covered by the light-transmitting film structure 300 are the outer surface and outer periphery of the structure formed after the micro-LED chip 210 and the driver chip 220 are electrically connected and connected to the carrier plate 110; for example, the light-transmitting film structure 300 covers the sidewalls of the micro-LED device 200, the sidewalls of the driver chip 220, the outer surface of the micro-LED device 200, and the outer surface of the driver chip 220 not covered by the micro-LED device 200. Similarly, at least a portion of the surface of the encapsulation substrate 100 covered by the light-transmitting film structure 300 is at least a portion of the outer surface of the area of ​​the encapsulation substrate 100 not covered by the micro-LED device 200 after the encapsulation substrate 100 is connected to the micro-LED device 200.

[0091] It is understood that the light-transmitting membrane structure 300 includes an inorganic membrane layer structure. The material of the light-transmitting membrane structure 300 may include, but is not limited to, inorganic materials such as aluminum oxide (Al2O3), silicon dioxide (SiO2), and silicon tetranitride (Si3N2). The light-transmitting membrane structure 300 with an inorganic membrane layer structure has both superior light transmission performance and superior airtightness performance.

[0092] It is understood that, in the manufacturing process, the light-transmitting film structure 300 can be formed on at least a portion of the surface and outer periphery of the micro-light-emitting diode module formed by connecting the micro-light-emitting diode device 200 and the packaging substrate 100 using a coating process. For example, an inorganic film material can be deposited on at least a portion of the outer periphery of the micro-light-emitting diode module using an atomic layer deposition (ALD) process to form the light-transmitting film structure 300.

[0093] It is understood that in some examples, the light-transmitting film structure 300 is a single-layer film structure. The material of the single-layer light-transmitting film structure 300 is Al2O3 or SiO2. The single-layer light-transmitting film structure 300 of the embodiments of this application has a transmittance of nearly 100% for light in the 530 nm to 540 nm wavelength band, and the light-transmitting film structure 300 has superior brightness performance; at the same time, the time required for the ALD process to deposit the single-layer light-transmitting film structure 300 is short, and the production efficiency of the light-transmitting film structure 300 is high.

[0094] Understandably, in some examples, the light-transmitting film structure 300 is a multi-layer (two or more layers) film structure. By designing the material of the multi-layer film structure, the light-transmitting film structure 300 can have better light transmittance in a wider wavelength range (for example, the light-transmitting film structure 300 can have a transmittance of about 99% for light in the 450 nm to 700 nm wavelength range); at the same time, the multi-layer film structure 300 has a better blocking effect on moisture such as water vapor, thus the light-transmitting film structure 300 can also have better encapsulation performance.

[0095] In some examples, in the stacking direction of the micro-LED device 200 and the packaging substrate 100 (i.e., the direction perpendicular to the packaging structure 10), the light-transmitting film structure 300 includes at least one set of stacked first film layers 310 and second film layers 320. For example, as Figure 3 As shown, Figure 3 This is a schematic diagram of a light-transmitting film structure 300 provided in an embodiment of this application, as shown below. Figure 3 As shown in (a), the light-transmitting film structure 300 is a double-layer film structure, comprising a first film layer 310 and a second film layer 320. In the vertical direction of the encapsulation structure 10, the first film layer 310 is located between the micro-LED device 200 and the second film layer 320. The first film layer 310 is closer to the micro-LED device 200 and the encapsulation substrate 100, while the second film layer 320 is further away from the micro-LED device 200 and the encapsulation substrate 100. The second film layer 320 is located on the outer surface of the entire encapsulation structure 10. For example, the light-transmitting film structure 300 may include a first film layer 310 and a second film layer 320 periodically stacked, such as... Figure 3 (b) The four-layer membrane structure, the light-transmitting membrane structure 300 includes a first membrane layer 310, a second membrane layer 320, and a first membrane layer 310 and a second membrane layer 320 stacked in sequence.

[0096] In the multilayer transparent film structure 300, the refractive index of the first film layer 310 is greater than that of the second film layer 320. For example, the first film layer 310 is a high refractive index structure with a refractive index greater than 1.5, and the second film layer 320 is a low refractive index structure with a refractive index less than 1.5. This is based on the following transmittance formula:

[0097]

[0098] Where Y is the transmittance of the light-transmitting film structure 300, when Y = 1, the best light transmittance enhancement of the light-transmitting film structure 300 can be achieved, and the closer Y is to 1, the better the light transmittance performance. L n is the refractive index of the first film layer 310; H Let S be the refractive index of the second film layer 320. S represents the total number of film layers in the transparent film structure 300. Figure 3 In the bilayer membrane structure shown in (a), S is 2; Figure 3 In the four-layer membrane structure shown in (b), S is 4. g n is the refractive index of the miniature light-emitting diode device 200. g It is typically 2.45.

[0099] Please combine Figure 3 Please refer to Figure 4 , Figure 4This diagram illustrates the refractive indices of the first film layer 310 and the second film layer 320 of the transparent film structure 300 provided in this application embodiment under different schemes. Figure 4 It can be seen that when the refractive index of the first film layer 310 is greater than that of the second film layer 320, making the light-transmitting film structure 300 a fixed high-refractive-index material matched with a low-refractive-index material, there are multiple combinations of the first film layer 310 and the second film layer 320 to make the transmittance Y of the light-transmitting film structure 300 approximately 1. For example, when the light-transmitting film structure 300 is a double-layer film structure, the first film layer 310 can be niobium pentoxide (Nb2O5) or titanium dioxide (TiO2), and the second film layer 320 can be SiO2. In this case, the transmittance Y of the light-transmitting film structure 300 is close to 1, and the light-transmitting film structure 300 has superior light transmission performance. For example, when the light-transmitting film structure 300 is a four-layer film structure, the first film layer 310 is zinc oxide (ZnO) or zirconium pentoxide (ZrO5), and the second film layer 320 can be Al2O3. In this case, the transmittance Y of the light-transmitting film structure 300 is close to 1, and the light-transmitting film structure 300 has superior light transmission performance. When the refractive index of the first film layer 310 is less than the refractive index of the second film layer 320, making the light-transmitting film structure 300 a fixed low-refractive-index material matched with a high-refractive-index material, the refractive index of the second film layer 320 is as follows: Figure 4 As shown, this allows the transmittance Y of the light-transmitting film structure 300 to approach 1.

[0100] It is understandable that, considering that the light-transmitting film structure 300 of this application also needs to take into account the hermetic performance of the packaging, when the light-transmitting film structure 300 is a double-layer film structure, with the first film layer 310 being tantalum pentoxide (Ta2O5) and the second film layer 320 being SiO2, the light-transmitting film structure 300 has a transmittance of about 99% for light in the 450 nm to 700 nm wavelength band. The light-transmitting film structure 300 can take into account both the light transmittance performance and the hermetic performance of the packaging in a wider wavelength band. When the light-transmitting film structure 300 is a four-layer film structure, with the first film layer 310 being ZrO5 and the second film layer 320 being Al2O3, the light-transmitting film structure 300 is stacked with ZrO5 layer, Al2O3 layer, ZrO5 layer, and Al2O3 layer in sequence. At this time, the light-transmitting film structure 300 has a transmittance of about 99% for light in the 450 nm to 700 nm wavelength band. The light-transmitting film structure 300 can take into account both the light transmittance performance and the hermetic sealing performance in a wide wavelength band.

[0101] In this embodiment, the refractive index of the first film layer 310 is greater than that of the second film layer 320. Based on the transmittance formula, it is easier to match the materials of the first film layer 310 and the second film layer 320 under optimal anti-reflection conditions, thus enabling the light-transmitting film structure 300 to have superior light transmittance across a wider wavelength range. Furthermore, when the light-transmitting film structure 300 is a double-layer structure with the first film layer 310 being Ta2O5 and the second film layer 320 being SiO2, or a four-layer structure with the first film layer 310 being ZrO5 and the second film layer 320 being Al2O3, the light-transmitting film structure 300 can balance light transmittance performance across a wider wavelength range with hermetic sealing performance.

[0102] Understandably, in some examples, the thickness of the light-transmitting film structure 300 is greater than 0 nanometers and less than or equal to 200 nanometers. For example, the thickness of the light-transmitting film structure 300 is approximately 10 nanometers, 15 nanometers, 20 nanometers, 40 nanometers, 80 nanometers, 100 nanometers, 150 nanometers, or 200 nanometers. The thickness of the light-transmitting film structure 300 in this application is between 0 nanometers and 200 nanometers. This avoids increasing the production cost and coating time of the film material due to excessive thickness. At the same time, the light-transmitting film structure 300 within this thickness range also has superior light transmission performance for the red, green, or blue light emitted by the micro LED chip 210.

[0103] For example, in the above examples, when the transparent film structure 300 is a single-layer film structure, if the transparent film structure 300 is made of Al2O3, the thickness of the Al2O3 film layer can be between 90 nanometers and 100 nanometers; if the transparent film structure 300 is made of SiO2, the thickness of the SiO2 film layer can be between 80 nanometers and 90 nanometers. When the transparent film structure 300 is a double-layer film structure, the thickness of the Ta2O5 layer of the first film layer 310 is between 60 nanometers and 70 nanometers, and the thickness of the SiO2 layer of the second film layer 320 is between 90 nanometers and 100 nanometers. When the transparent film structure 300 is a four-layer film structure, the thickness ranges of the ZrO5 layer, Al2O3 layer, ZrO5 layer, and Al2O3 layer of the transparent film structure 300 are respectively between 80 nanometers and 85 nanometers, 60 nanometers and 70 nanometers, 140 nanometers and 150 nanometers, and 30 nanometers and 35 nanometers.

[0104] The light-transmitting film structure 300 of the encapsulation structure 10 of this application covers the surface and outer periphery of the micro-light-emitting diode device 200, as well as at least a portion of the surface of the encapsulation substrate 100. The light-transmitting film structure 300 reduces the adverse effects of moisture and other objects on the micro-light-emitting diode device 200, providing encapsulation and protection, and improving the encapsulation reliability of the encapsulation structure 10. Simultaneously, the light-transmitting film structure 300 has high light transmittance, improving the light transmission performance of the micro-light-emitting diode device 200. Furthermore, when the light-transmitting film structure 300 of this application is an inorganic film layer structure, compared to organic encapsulation materials, the inorganic film layer material of the light-transmitting film structure 300 has superior airtightness, significantly improving the reliability of the encapsulation structure 10. Based on this, the light-transmitting film structure 300 with an inorganic film layer in this application achieves the encapsulation of the micro-light-emitting diode device 200, and the encapsulation structure 10 has superior encapsulation reliability and light transmission display performance. Furthermore, when the carrier plate 110 is a heat dissipation substrate, the light-transmitting film structure 300 of this application has high light transmittance and good airtight protection, the carrier plate 110 has good heat conduction and heat dissipation, and the packaging structure 10 of this application can meet the requirements of light, electricity and heat to the greatest extent, and the packaging performance is superior.

[0105] In some examples, please refer to Figure 5 , Figure 5 This is a schematic diagram of a micro light-emitting diode chip 210 provided in an embodiment of this application. Figure 5 In Figure 5 (a) and Figure 5 (b) are schematic diagrams of the micro LED chip 210 in different orientations. The micro LED chip 210 includes a first substrate 211, and a first semiconductor layer 212, a light-emitting layer 213, a second semiconductor layer 214, a first electrode layer 215, a second electrode layer 216, and multiple solder joint structures 217 formed on the first substrate 211.

[0106] The first substrate 211 supports the film structure thereon and can be a sapphire substrate, a silicon substrate, or a silicon carbide substrate, etc. The light-emitting layer 213 is a quantum well layer, for example, an indium gallium nitride (IGaN) quantum well layer or an IGaN / GaN multi-quantum well layer. The first semiconductor layer 212 is either an N-type semiconductor layer or a P-type semiconductor layer, and the second semiconductor layer 214 is either an N-type semiconductor layer or a P-type semiconductor layer, wherein the N-type semiconductor layer is an N-type gallium nitride layer or an N-type gallium arsenide layer, and the P-type semiconductor layer is a P-type gallium nitride layer or a P-type aluminum gallium nitride layer. The first electrode layer 215 is disposed on the side of the second semiconductor layer 214 opposite to the light-emitting layer 213 and is electrically connected to the second semiconductor layer 214. The second electrode layer 216 is disposed in the exposed area of ​​the first semiconductor layer 212 and is electrically connected to the first semiconductor layer 212. Solder joint structure 217 is connected to the first electrode layer 215 and the second electrode layer 216. Solder joint structure 217 can be made of metals such as indium (In), aluminum (Al), tin (Sn), silver (Ag), gold (Au), gold-tin alloy, and nickel-gold alloy. Solder joint structure 217 is used for bonding with driver chip 220. It should be noted that the above is only an example of micro light-emitting diode chip 210. For example, micro light-emitting diode chip 210 may also include structures such as current diffusion layer and buffer layer.

[0107] In some examples, please refer to Figure 6 , Figure 6 This is a schematic diagram of a driver chip 220 provided in an embodiment of this application. Figure 6 In Figure 6 (a) and Figure 6 (b) are schematic diagrams of the driver chip 220 from different orientations. The driver chip 220 includes a second substrate 221, a driver circuit 222 formed on the second substrate 221, and a plurality of driver pads 223. The driver circuit 222 may be, but is not limited to, a CMOS circuit structure or a TFT circuit structure. The driver pads 223 may be, but are not limited to, made of metals such as In, Al, Sn, Ag, Au, gold-tin alloy, and nickel-gold alloy.

[0108] Understandably, in combination Figure 6 Please refer to Figure 7 , Figure 7This is a schematic diagram illustrating the bonding connection between the driver chip 220 and the micro LED chip 210 provided in this embodiment. Multiple driver pads 223 of the driver chip 220 form bonding regions 224 of the driver chip 220 and are correspondingly set and bonded one-to-one with multiple solder joint structures 217 of the micro LED chip 210 to achieve electrical connection. The driver chip 220 is located between the micro LED chip 210 and the packaging substrate 100. The driver chip 220 provides electrical signals to the micro LED chip 210 and controls the micro LED chip 210 to emit light.

[0109] It is understandable that, such as Figure 8 As shown, Figure 8 This is a schematic diagram of a micro light-emitting diode device 200 provided in an embodiment of this application. The micro light-emitting diode device 200 may further include a filling structure 230. The micro light-emitting diode device 200 can fill the filling structure 230, such as glue, from the bonding gap between the micro light-emitting diode chip 210 and the driver chip 220 into the interior of the micro light-emitting diode device 200 and form the micro light-emitting diode device 200 of this embodiment of the application. The filling structure 230 can fill between multiple pixel units of the micro light-emitting diode chip 210.

[0110] It should be noted that the driver chip 220 and the miniature LED chip 210 can also have other electrical connection methods. For example, the driver chip 220 and the miniature LED chip 210 can be fabricated on the same substrate through a process and electrically connected through wires, flexible circuit boards, etc. In this case, the miniature LED device 200 is relatively thin.

[0111] In some examples, please refer to Figure 9 , Figure 9 This is a schematic diagram of a packaging substrate 100 provided in an embodiment of this application. Figure 9 middle Figure 9 (a) to Figure 9(c) is a schematic diagram of the packaging substrate 100 in different orientations. The circuit board 120 of the packaging substrate 100 is stacked and connected to the carrier plate 110. The carrier plate 110 includes a first end 111 and a second end 112 disposed opposite to each other. The circuit board 120 has a first terminal structure 121 electrically connected to the electrical connector 400 and a second terminal structure 122 electrically connected to an external circuit. The first terminal structure 121 of the circuit board 120 is stacked and connected to the first end 111 of the carrier plate 110. The second terminal structure 122 of the circuit board 120 extends beyond the carrier plate 110 and is used for electrical connection to an external circuit to receive electrical signals and control signals provided by the external circuit. In some examples, the carrier plate 110 is a heat dissipation substrate, which is a metal or non-metal structure. The heat dissipation substrate can increase the heat dissipation of the packaging structure 10. In some examples, the circuit board 120 can be a flexible board, for example, a flexible flat cable structure. The flexible circuit board 120 is lighter, more reliable, and easier to transport the packaging structure 10.

[0112] It is understandable that, such as Figure 10 As shown, Figure 10 This is a schematic diagram showing a connection between the packaging substrate 100 and the micro light-emitting diode device 200 provided in an embodiment of this application. The micro light-emitting diode device 200 and the circuit board 120 are disposed on the same side of the carrier plate 110 and are spaced apart from each other. Figure 8 The bonding structure, after being filled with adhesive, is fixed to the carrier plate 110 by the die-bonding structure 240, thereby achieving the connection between the driver chip 220 and the carrier plate 110. The die-bonding structure 240 can be, but is not limited to, adhesive, metal welding material structure, or non-metal welding material structure.

[0113] It is understandable that, such as Figure 11 As shown, Figure 11 This is a schematic diagram of the structure after the packaging substrate 100 provided in this embodiment of the application is connected to the micro light-emitting diode device 200 and the first substrate 211 is removed. After the micro light-emitting diode device 200 is connected to the carrier plate 110, the first substrate 211 of the micro light-emitting diode chip 210 can be peeled off by laser lift-off (LLO) process.

[0114] It is understandable that, such as Figure 12 and Figure 13 As shown, Figure 12 This is a schematic diagram of an electrical connection between the circuit board 120 and the driver chip 220 according to an embodiment of this application. Figure 13 for Figure 12The diagram shows another possible orientation of the structure. After the first substrate 211 is peeled off, the driver chip 220 is electrically connected to the circuit board 120 via the electrical connector 400. For example, the first terminal structure 121 of the circuit board 120 is wire-bonded to connect the circuit board 120 to the driver chip 220. The electrical connector 400 achieves the electrical connection between the circuit board 120 and the driver chip 220 through the first terminal structure 121. The driver chip 220 can receive electrical signals and control signals transmitted from the circuit board 120 and control the micro LED chip 210 to emit light. The electrical connector 400 can be, but is not limited to, a conductive gold wire, a conductive copper wire, a conductive aluminum wire, etc.

[0115] Understandably, in combination Figure 12 and Figure 13 And refer to Figure 14 and Figure 15 , Figure 14 for Figure 12 The diagram shown is a structural schematic of a structure after filling and encapsulating colloid 500. Figure 15 for Figure 14 The diagram shows a structural schematic from another direction. The encapsulation structure 10 also includes an encapsulating colloid 500. This encapsulating colloid 500 is disposed on the surface of the circuit board 120 and the surface of the driver chip 220, and encapsulates the electrical connector 400. In the manufacturing process, adhesive can be first applied around the electrical connector 400 to form a dam, and then the area enclosed by the dam is filled with colloid to form the encapsulating colloid 500. By encapsulating the electrical connector 400 with the encapsulating colloid 500, corrosion at the electrical connection between the circuit board 120 and the driver chip 220 by moisture or other liquids can be minimized, thereby improving the airtightness and reliability of the encapsulation structure 10.

[0116] In this regard, please combine Figures 1 to 15 Please refer to Figure 16 , Figure 16 This is a partial schematic diagram of the encapsulation structure 10 provided in an embodiment of this application. The area between the first terminal structure 121 of the circuit board 120 of the encapsulation structure 10 and the second end 112 of the carrier plate 110 away from the circuit board 120 forms an encapsulation region 301. In some examples, a light-transmitting film structure 300 covers the surface and outer periphery of the encapsulation region 301.

[0117] Understandably, in some examples, the orthographic projection of the side edge of the first terminal structure 121 of the circuit board 120 away from the second end 112 onto the carrier plate 110 can be aligned (or approximately aligned) with the edge of the first end 111 of the carrier plate 110. In this case, the orthographic projection of the light-transmitting film structure 300 onto the encapsulation substrate 100 can cover the orthographic projection of the carrier plate 110 onto the encapsulation substrate 100, and the area of ​​the orthographic projection of the light-transmitting film structure 300 is approximately equal to the area of ​​the orthographic projection of the encapsulation substrate 100. The encapsulation region 301 is the surface and outer peripheral area of ​​the micro LED module between the first end 111 and the second end 112 of the carrier plate 110. Of course, in other examples, the orthographic projection of the side edge of the first terminal structure 121 of the circuit board 120 away from the second end 112 onto the carrier plate 110 is located between the two ends of the carrier plate 110 and closer to the first end 111.

[0118] It is understandable that during the coating process, areas that do not need to be coated (such as other areas of the circuit board 120 that are far away from the first terminal structure 121) can be blocked by a mask structure, and then the encapsulation area 301 is coated to form a light-transmitting film structure 300.

[0119] In this embodiment, the encapsulation area 301 extends from the first terminal structure 121 of the circuit board 120 to the second end 112 of the carrier plate 110. The light-transmitting film structure 300 can seal and encapsulate all the micro light-emitting diode chips 210 and driver chips 220, as well as the electrical connection area between the circuit board 120 and the driver chip 220, further improving the sealing performance of the encapsulation structure 10.

[0120] Please continue to refer to the following: Figure 16 The light-transmitting film structure 300 covers the encapsulating colloid 500 that encapsulates the electrical connector 400. At this time, the light-transmitting film structure 300 includes a first part 311, a second part 312, and a third part 313 connected to each other. The first part 311 covers part of the surface of the carrier plate 110, the second part 312 covers the surface and outer periphery of the micro light-emitting diode device 200, and the third part 313 covers the surface and outer periphery of the encapsulating colloid 500.

[0121] Generally, the size of the micro LED chip 210 is smaller than the size of the driver chip 220, and the size of the driver chip 220 is smaller than the size of the carrier plate 110. When the micro LED chip 210, the driver chip 220, and the circuit board 120 are disposed on the carrier plate 110, the driver chip 220 and the carrier plate 110 form a stepped structure, the micro LED chip 210 and the driver chip 220 form a stepped structure, the circuit board 120 and the driver chip 220 are disposed at intervals, and the encapsulating colloid 500 wraps the electrical connector 400 and fills the gap between the circuit board 120 and the driver chip 220.

[0122] Understandably, the first part 311 of the light-transmitting film structure 300 is located on the surface of the edge region of the carrier plate 110 that is not blocked by the driving chip 220; the second part 312 of the light-transmitting film structure 300 is connected to the first part 311 and extends along the sidewall of the driving chip 220 to the surface of the side edge of the driving chip 220 that is not blocked by the micro light-emitting diode chip 210, and extends along one sidewall of the micro light-emitting diode chip 210 to the surface of the micro light-emitting diode chip 210, and extends to the other sidewall of the micro light-emitting diode chip 210, and extends to the surface of the other side edge of the driving chip 220 that is not blocked by the micro light-emitting diode chip 210; the third part 313 of the light-transmitting film structure 300 is connected to the second part 312 and extends along one sidewall of the encapsulating colloid 500 to the surface of the encapsulating colloid 500, and extends to the other sidewall of the encapsulating colloid 500. In some examples, when the edge of the encapsulation region 301 extends beyond the sidewall edge of the encapsulation colloid 500, the third portion 313 of the light-transmitting film structure 300 can continue to extend to the surface of the circuit board 120 not covered by the encapsulation colloid 500.

[0123] The light-transmitting film structure 300 of this application embodiment covers the surface of the encapsulating colloid 500. The light-transmitting film structure 300 can further encapsulate and seal the electrical connection between the circuit board 120 and the driver chip 220, making the electrical connection between the circuit board 120 and the driver chip 220 more reliable.

[0124] Please refer to the following: Figure 17 and Figure 18 , Figure 17 This is a schematic diagram of a second structure of the packaging structure 10 provided in the embodiments of this application. Figure 18 for Figure 17 The diagram shows a structural schematic of the encapsulation structure 10 from another direction. In this embodiment, the coating process of the light-transmitting film structure 300 can be performed before the process of filling the encapsulating colloid 500, such that in the vertical direction of the encapsulation structure 10, a portion of the light-transmitting film structure 300 is disposed between the encapsulation substrate 100 and the encapsulating colloid 500.

[0125] It is understandable that, such as Figure 17 and Figure 18As shown, the first portion 311 of the light-transmitting film structure 300 is located on the surface of the edge region of the carrier plate 110 not obscured by the driving chip 220; the second portion 312 of the light-transmitting film structure 300 is connected to the first portion 311 and extends along the sidewall of the driving chip 220 to the surface of the side edge of the driving chip 220 not obscured by the micro LED chip 210, and extends along one sidewall of the micro LED chip 210 to the surface of the micro LED chip 210, and extends along the other sidewall of the micro LED chip 210 to the surface of the other side edge of the driving chip 220 not obscured by the micro LED chip 210; the third portion 313 of the light-transmitting film structure 300 is connected to the second portion 312 and extends along the gap between the circuit board 120 and the driving chip 220 and along the sidewall edge of the circuit board 120 to the surface of the circuit board 120 (i.e., extends to the first terminal structure 121, as shown in the appendix of this application). Figure 17 (This is only a schematic diagram of the light-transmitting film structure 300). Then, a coating process is performed to fill the encapsulating colloid 500. In the stacking direction of the micro light-emitting diode device 200 and the encapsulating substrate 100, the encapsulating colloid 500 is located above and covers the third part 313 of the light-transmitting film structure 300.

[0126] In this embodiment, the coating process of the light-transmitting film structure 300 is formed before the process of filling the encapsulating colloid 500. Since the height difference between the micro LED chip 210, the driver chip 220, and the circuit board 120 is smaller than the height difference between the encapsulating colloid 500, the micro LED chip 210, the driver chip 220, and the circuit board 120, the third part 313 of the light-transmitting film structure 300 in this embodiment is disposed between the encapsulation substrate 100 and the encapsulating colloid 500. On the one hand, the area of ​​the light-transmitting film structure 300 is smaller, which can save the production cost of the light-transmitting film structure 300; on the other hand, the overall height difference of the light-transmitting film structure 300 is smaller, the connection between different parts of the light-transmitting film structure 300 is more uniform, and the sealing performance and light transmission performance of the light-transmitting film structure 300 are both better.

[0127] Please refer to this again. Figures 1 to 18 The packaging structure 10 of this application also includes a light-shielding structure 600. The micro light-emitting diode chip 210 includes a light-emitting area 201 and a non-light-emitting area 202. The light-shielding structure 600 is disposed on the side of the light-transmitting film structure 300 facing away from the micro light-emitting diode chip 210, and the light-shielding structure 600 is disposed opposite to the non-light-emitting area 202.

[0128] It is understood that the non-light-emitting region 202 of the micro-LED chip 210 is disposed around the outer periphery of the light-emitting region 201, and the light-emitting region 201 is located inside the non-light-emitting region 202. The non-light-emitting region 202 is the electrode and wiring area of ​​the micro-LED chip 210, and the light-emitting region 201 is the light-emitting region of the micro-LED chip 210; the light-emitting region 201 includes the light-emitting surface of the micro-LED chip 210 and the layered structure below the light-emitting surface, and the non-light-emitting region 202 includes the non-light-emitting surface of the micro-LED chip 210 and its lower layered structure. For example, as... Figure 5 As shown, the first region formed by all the first electrode layers 215 and the layered structures above and below them can be the light-emitting region 201 of the micro LED chip 210; the second region formed by all the second electrode layers 216 and the layered structures above and below them can be the non-light-emitting region 202 of the micro LED chip 210.

[0129] It is understood that the light-shielding structure 600 may, but is not limited to, be a ring structure corresponding to the non-light-emitting area 202. The projection of the light-shielding structure 600 onto the micro LED chip 210 covers the non-light-emitting area 202.

[0130] It is understood that the light-shielding structure 600 can be, but is not limited to, light-shielding adhesive, light-shielding tape, etc. During manufacturing, the light-shielding structure 600 can be formed in the non-light-emitting area 202 of the micro-LED chip 210 using a dispensing process.

[0131] In this embodiment, the light-shielding structure 600 of the encapsulation structure 10 is disposed on the side of the light-transmitting film structure 300 that is away from the micro light-emitting diode chip 210 and is directly opposite to the non-light-emitting area 202. The light-shielding structure 600 can reduce the light leakage rate of the micro light-emitting diode chip 210, thereby improving the display effect of the micro light-emitting diode chip 210.

[0132] Please refer to the following: Figure 19 , Figure 19 This is a schematic diagram of the encapsulation structure 10 provided in another embodiment of this application. The encapsulation structure 10 in this embodiment also includes a reinforcing colloid 700. The reinforcing colloid 700 is disposed on the side of the circuit board 120 facing away from the micro-light-emitting diode device 200, and is located in the region adjacent to the connection area between the carrier plate 110 and the circuit board 120. The reinforcing colloid 700 can both seal the connection gap between the carrier plate 110 and the circuit board 120 and increase the connection strength between the carrier plate 110 and the circuit board 120.

[0133] Please refer to this again. Figures 1 to 19The circuit board 120 also includes a second terminal structure 122, which is electrically connected to the aforementioned first terminal structure 121. At the same time, the second terminal structure 122 is also electrically connected to an external circuit. The external circuit is electrically connected to the driver chip 220 through the first terminal structure 121, the second terminal structure 122 and the electrical connector 400.

[0134] It is understandable that the second terminal structure 122 can be located near the end of the circuit board 120 away from the driver chip 220, and the second terminal structure 122 can extend out of the carrier plate 110, making it easier to connect to external circuits.

[0135] It is understandable that, such as Figures 1 to 19 As shown, the packaging substrate 100 of this application further includes a reinforcing sheet 800, which is disposed on opposite sides of the packaging substrate 100, along with the second terminal structure 122. For example, the second terminal structure 122 is disposed on the side of the circuit board 120 facing away from the micro-LED device 200, while the reinforcing sheet 800 is disposed on the side of the circuit board 120 close to the micro-LED device 200. As another example, the reinforcing sheet 800 is disposed on the side of the circuit board 120 facing away from the micro-LED device 200, while the second terminal structure 122 is disposed on the side of the circuit board 120 close to the micro-LED device 200. The reinforcing sheet 800 and the second terminal structure 122 are directly opposite each other, and the orthographic projection of the reinforcing sheet 800 on the circuit board 120 overlaps the orthographic projection of the second terminal structure 122 on the circuit board 120. The packaging substrate 100 of this embodiment provides the reinforcing sheet 800, which increases the structural strength of the circuit board 120 near the second terminal structure 122.

[0136] Based on the above description, the light-transmitting film structure 300 of the inorganic film layer structure of this application is disposed on the surface and outer periphery of the micro light-emitting diode device 200, as well as on at least part of the surface of the encapsulation substrate 100. The light-transmitting film structure 300 has better airtightness, which can greatly reduce the adverse effects of water vapor and other objects on the micro light-emitting diode device 200. The light-transmitting film structure 300 can greatly improve the reliability of the encapsulation structure 10. Furthermore, when the carrier plate 110 is a heat dissipation substrate, the carrier plate 110 has good heat conduction and heat dissipation effect. The encapsulation structure 10 of this application can meet the requirements of light, electricity and heat to the maximum extent, and the encapsulation performance is superior.

[0137] Based on the description of the packaging structure 10 above, this application also provides a packaging method. Please refer to... Figure 20 , Figure 20 This is a schematic diagram of the first process of the encapsulation method provided in the embodiments of this application.

[0138] In S101, a miniature light-emitting diode device 200 is provided, which includes a miniature light-emitting diode chip 210 and a driver chip 220 that are electrically connected.

[0139] like Figures 5 to 8 As shown, the multiple solder joint structures 217 of the micro LED chip 210 are bonded one-to-one with the multiple driving pads 223 of the driver chip 220, thereby realizing the electrical connection between the micro LED chip 210 and the driver chip 220.

[0140] In S102, a packaging substrate 100 is provided, which includes a carrier plate 110 and a circuit board 120 connected to each other.

[0141] like Figure 9 As shown, the carrier plate 110 is a heat dissipation substrate, which can increase the heat dissipation of the package structure 10. The circuit board 120 is a flexible board, for example, the circuit board 120 is a flexible flat cable structure. The carrier plate 110 can be connected to the driver chip 220 by adhesive, but is not limited to this.

[0142] In S103, the micro light-emitting diode chip 210 and the driver chip 220 are stacked sequentially on the carrier plate 110, and the circuit board 120 is electrically connected to the driver chip 220 through the electrical connector 400.

[0143] like Figures 9 to 15 As shown, the miniature LED device 200 and the circuit board 120 are disposed on the same side of the carrier plate 110 and are spaced apart from each other. The driver chip 220 is located between the miniature LED chip 210 and the carrier plate 110. The circuit board 120 is used for electrical connection with external circuits, and the driver chip 220 is electrically connected to the circuit board 120 through the electrical connector 400. The driver chip 220 can receive electrical signals and control signals transmitted from the circuit board 120, thereby controlling the miniature LED chip 210 to emit light.

[0144] In S104, a continuous light-transmitting film structure 300 is formed on the surface and outer periphery of the micro light-emitting diode device 200 and at least a portion of the surface of the encapsulation substrate 100, and an encapsulation structure 10 is formed.

[0145] It is understandable that the light-transmitting film structure 300 includes an inorganic film layer structure. Compared with organic encapsulation materials, the light-transmitting film structure 300 with inorganic film layer material has better airtightness, which can greatly reduce the adverse effects of water vapor and other objects on the micro light-emitting diode device 200. The light-transmitting film structure 300 can greatly improve the reliability of the encapsulation structure 10.

[0146] In the manufacturing process, the light-transmitting film structure 300 can be formed by depositing inorganic film material on at least part of the outer periphery of the micro light-emitting diode module using atomic layer deposition (ALD) process.

[0147] Understandably, in some examples, the light-transmitting film structure 300 is a single-layer film structure. In some examples, the material of the single-layer light-transmitting film structure 300 is aluminum oxide (Al2O3) or silicon dioxide (SiO2). In this case, the light-transmitting film structure 300 has a transmittance of nearly 100% for light in the 530 nm to 540 nm wavelength band, and the light-transmitting film structure 300 has superior brightness performance; at the same time, the time required for the ALD process to deposit the single-layer light-transmitting film structure 300 is relatively short, and the production efficiency of the light-transmitting film structure 300 is high.

[0148] Understandably, in some examples, the light-transmitting film structure 300 is a multilayer film structure. The light-transmitting film structure 300 includes at least one set of stacked first film layers 310 and second film layers 320. The first film layer 310 is located between the micro-light-emitting diode device 200 and the second film layer 320, and the refractive index of the first film layer 310 is greater than that of the second film layer 320. This makes it easier to select suitable materials for the first film layer 310 and the second film layer 320, resulting in better light transmittance for the light-transmitting film structure 300.

[0149] Understandably, in some examples, when the light-transmitting film structure 300 is a double-layer film structure, the first film layer 310 is made of Ta2O5, and the second film layer 320 is made of SiO2. In this case, the light-transmitting film structure 300 has both superior light transmittance and superior hermetic sealing performance.

[0150] Understandably, in some examples, when the transparent film structure 300 is a four-layer film structure, the first film layer 310 is made of ZrO5, and the second film layer 320 is made of Al2O3. In this case, the transparent film structure 300 has both superior light transmittance and superior hermetic sealing performance.

[0151] Understandably, in some examples, the light-transmitting film structure 300 is a single-layer film structure. In other examples, the light-transmitting film structure 300 can also be a multi-layer film structure, where at least two layers are made of different materials, or each layer is made of a different material. The thickness of the light-transmitting film structure 300 is greater than 0 nanometers and less than 200 nanometers. This avoids increasing the production cost and coating time of the film material due to excessive thickness, while also providing superior light transmission performance for the red, green, or blue light emitted by the micro-LED chip 210.

[0152] The encapsulation method of this application covers the surface and outer periphery of the micro-light-emitting diode device 200 and at least a portion of the surface of the encapsulation substrate 100 with a light-transmitting film structure 300. The light-transmitting film structure 300 reduces the adverse effects of moisture and other objects on the micro-light-emitting diode device 200, providing encapsulation and protection for the micro-light-emitting diode device 200 and improving the encapsulation reliability of the encapsulation structure 10. Simultaneously, the light-transmitting film structure 300 has high light transmittance, improving the light transmittance performance of the micro-light-emitting diode device 200. Based on this, this application achieves the encapsulation of the micro-light-emitting diode device 200 by using a light-transmitting film structure 300 with an inorganic film layer, resulting in encapsulation structure 10 with superior encapsulation reliability and light transmittance display performance.

[0153] In some examples, prior to step S104, the encapsulation method further includes forming an encapsulating colloid 500 that encapsulates the electrical connector 400. In this case, step S104 includes forming a continuous light-transmitting film structure 300 on a portion of the surface of the encapsulation substrate 100, the surface and outer periphery of the micro light-emitting diode device 200, and the surface and outer periphery of the encapsulating colloid 500, thereby forming the encapsulation structure 10.

[0154] The light-transmitting film structure 300 of this application embodiment covers the surface of the encapsulating colloid 500. The light-transmitting film structure 300 can further encapsulate and seal the electrical connection between the circuit board 120 and the driver chip 220, making the electrical connection between the circuit board 120 and the driver chip 220 more reliable.

[0155] In some examples, step S104 includes: forming a continuous light-transmitting film structure 300 on the surface and outer periphery of the micro light-emitting diode device 200 and at least a portion of the surface of the encapsulation substrate 100; forming an encapsulation colloid 500 that encapsulates the electrical connector 400, and making the encapsulation colloid 500 cover a portion of the light-transmitting film structure 300, and forming an encapsulation structure 10.

[0156] The coating process of the light-transmitting film structure 300 in this embodiment is formed before the process of filling and encapsulating colloid 500. The area of ​​the light-transmitting film structure 300 is small, which can save the production cost of the light-transmitting film structure 300. At the same time, the overall height difference of the light-transmitting film structure 300 is small, the connection between different parts of the light-transmitting film structure 300 is more uniform, and the sealing performance and light transmission performance of the light-transmitting film structure 300 are both better.

[0157] In some examples, the carrier plate 110 includes a first end 111 and a second end 112 disposed opposite to each other; the circuit board 120 is provided with a first terminal structure 121 electrically connected to the electrical connector 400, the first terminal structure 121 being stacked and connected to the first end 111. In this case, step S104 includes: covering the outer periphery of the encapsulation region 301 extending from the first terminal structure 121 to the second end 112 with the light-transmitting film structure 300, and forming an encapsulation structure 10. It is understood that in some examples, step S104 further includes: covering the surface and outer periphery of the encapsulation region 301 extending from the first terminal structure 121 to the second end 112 with the light-transmitting film structure 300, and covering the surface and outer periphery of the encapsulating colloid 500, and forming the encapsulation structure 10. In other examples, step S104 further includes: covering the surface and outer periphery of the encapsulation region 301 extending from the first terminal structure 121 to the second end 112 with the light-transmitting film structure 300, and covering a portion of the light-transmitting film structure 300 with the encapsulation colloid 500 to form the encapsulation structure 10.

[0158] The light-transmitting film structure 300 of this application embodiment can seal and encapsulate all the micro light-emitting diode chips 210 and driver chips 220, as well as the electrical connection area between the circuit board 120 and the driver chip 220, further improving the sealing performance of the encapsulation structure 10.

[0159] In some embodiments, the micro LED chip 210 includes a light-emitting region 201 and a non-light-emitting region 202. The packaging method further includes providing a light-shielding structure 600 on the side of the light-transmitting film structure 300 facing away from the micro LED chip 210 and directly opposite the non-light-emitting region 202. In this case, the light-shielding structure 600 can reduce the light leakage rate of the micro LED chip 210, thereby improving the display effect of the micro LED chip 210.

[0160] In some embodiments, the encapsulation method further includes: providing a reinforcing colloid 700 in a region adjacent to the connection area between the circuit board 120 and the carrier plate 110 on the side of the circuit board 120 facing away from the micro light-emitting diode device 200. This reinforcing colloid 700 can both seal the connection gap between the carrier plate 110 and the circuit board 120 and increase the connection strength between the carrier plate 110 and the circuit board 120.

[0161] Based on the above explanation, please refer to Figure 21 , Figure 21 This is a second flowchart illustrating the encapsulation method provided in an embodiment of this application.

[0162] In S201, a miniature light-emitting diode device 200 is provided, which includes a miniature light-emitting diode chip 210 and a driver chip 220 bonded together.

[0163] like Figures 5 to 8 As shown, the multiple solder joint structures 217 of the micro LED chip 210 are bonded one-to-one with the multiple driving pads 223 of the driver chip 220, thereby realizing the bonding connection between the micro LED chip 210 and the driver chip 220.

[0164] In S202, a packaging substrate 100 is provided, which includes a carrier plate 110 and a circuit board 120 connected to each other.

[0165] like Figure 9 As shown, the carrier plate 110 is a heat dissipation substrate. The circuit board 120 is a flexible board, for example, the circuit board 120 is a flexible flat cable structure.

[0166] In S203, the micro light-emitting diode chip 210 and the driver chip 220 are stacked sequentially on the carrier plate 110.

[0167] like Figure 10 and Figure 11 As shown, the carrier plate 110 is connected to the driver chip 220 through the die-bonding structure 240. The miniature light-emitting diode device 200 and the circuit board 120 are disposed on the same side of the carrier plate 110 and are spaced apart from each other. The driver chip 220 is located between the miniature light-emitting diode chip 210 and the carrier plate 110.

[0168] In S204, the first substrate 211 of the micro light-emitting diode chip 210 is removed.

[0169] like Figure 11 As shown, this step can, but is not limited to, peeling off the first substrate 211 of the micro LED chip 210 using the LLO manufacturing process.

[0170] In S205, the circuit board 120 is electrically connected to the driver chip 220 via the electrical connector 400.

[0171] like Figure 10 and Figure 11 As shown, after the first substrate 211 is stripped, this step uses a wire bonding process to connect the circuit board 120 and the driver chip 220. The driver chip 220 can receive electrical signals and control signals transmitted by the circuit board 120, thereby controlling the micro LED chip 210 to emit light.

[0172] In S206, an encapsulating colloid 500 is formed to encapsulate the electrical connector 400.

[0173] like Figures 13 to 15As shown, the circuit board 120 has a pre-set bonding area 123. In this step, adhesive is first applied around the electrical connector 400 to form a dam or retaining wall. Then, adhesive is filled in the dam or retaining wall area to form an encapsulating adhesive 500. The encapsulating adhesive 500 wraps around the electrical connector 400, which can minimize the corrosion of the electrical connection between the circuit board 120 and the driver chip 220 by moisture and other liquids, thereby improving the airtightness and reliability of the micro LED device 200 packaging structure 10.

[0174] In S207, a continuous light-transmitting film structure 300 is formed on a portion of the surface of the encapsulation substrate 100, the surface and outer periphery of the micro light-emitting diode device 200, and the surface and outer periphery of the encapsulation colloid 500.

[0175] In the manufacturing process, the light-transmitting film structure 300 can be formed by depositing inorganic film material on at least part of the surface and outer periphery of the micro light-emitting diode module using the ALD process.

[0176] In S208, a light-shielding structure 600 is provided on the side of the light-transmitting film structure 300 that is opposite to the micro light-emitting diode chip 210 and directly opposite the non-light-emitting area 202.

[0177] In the manufacturing process, a light-shielding structure 600 can be formed in the non-light-emitting area 202 of the micro LED chip 210 through a dispensing process.

[0178] In S209, a reinforcing colloid 700 is provided on the side of the circuit board 120 opposite to the micro light-emitting diode device 200 and in the adjacent area of ​​the connection area between the circuit board 120 and the carrier plate 110, and an encapsulation structure 10 is formed.

[0179] like Figure 19 As shown, reinforcing adhesive 700 is applied to the adjacent area of ​​the connection region between the circuit board 120 and the carrier plate 110 on the side of the circuit board 120 opposite to the micro light-emitting diode device 200 by dispensing process, and an encapsulation structure 10 is formed.

[0180] It is understandable that, such as Figure 21 As shown, between steps S205 and S208, step S210 may also be included: forming a continuous light-transmitting film structure 300 on the surface and outer periphery of the micro light-emitting diode device 200 and at least a portion of the surface of the encapsulation substrate 100; step S211: forming an encapsulating colloid 500 that encapsulates the electrical connector 400 and covering a portion of the light-transmitting film structure 300 with the encapsulating colloid 500.

[0181] Based on the above description, the encapsulation method of this application forms a continuous inorganic film layer structure 300 of light-transmitting film 300 on the outer periphery of the micro light-emitting diode device 200 and part of the outer periphery of the encapsulation substrate 100. The light-transmitting film structure 300 has superior airtightness, significantly reducing the adverse effects of moisture and other objects on the micro light-emitting diode device 200, and greatly improving the reliability of the encapsulation structure 10. Furthermore, when the light-transmitting film structure 300 covers the surface of the encapsulating colloid 500, it further seals the electrical connection between the circuit board 120 and the driver chip 220, making the electrical connection between the circuit board 120 and the driver chip 220 more reliable. When part of the light-transmitting film structure 300 is located below and covered by the encapsulating colloid 500, the production cost of the light-transmitting film structure 300 is lower, and both its sealing performance and light transmission performance are superior. Therefore, the production process of the light-transmitting film structure 300 in this application is more flexible and more conducive to the production process of the encapsulation structure 10. Based on this, this application realizes the encapsulation of the micro light-emitting diode device 200 by setting the light-transmitting film structure 300 with inorganic film layer, and the encapsulation structure 10 has better encapsulation reliability and light transmission display performance.

[0182] Based on the above description, this application also provides a display device 20, please refer to... Figure 22 , Figure 22 This is a schematic diagram of a display device 20 provided in an embodiment of this application. The display device 20 can be applied to electronic devices to realize extended reality (XR) technologies such as augmented reality (AR), virtual reality (VR), and mixed reality (MR). In implementation, the display device 20 can be the projection part of an electronic device, such as a projector or head-up display (HUD); or, for example, the display device 20 can be the display part of an electronic device, such as a smartphone, smartwatch, laptop, tablet, dashcam, navigator, head-mounted device, or any device with a display screen; or, for example, the display device 20 can be the lighting part of an electronic device, such as a vehicle or streetlight, or any device with lighting components.

[0183] It is understood that the display device 20 of this application embodiment includes the packaging structure 10 of any of the foregoing embodiments, or includes the packaging structure 10 prepared by the packaging method of any of the foregoing embodiments. Therefore, the display device 20 of this application has superior packaging integrity, high reliability, and better aesthetics.

[0184] It should be noted that the packaging structure 10, packaging method, and display device 20 in the embodiments of this application are different subjects under the same inventive concept, and features not described in detail in each embodiment can be referred to the descriptions in other embodiments.

[0185] It should be noted that the term "multiple" in this application generally refers to two or more. Furthermore, the directional terms used in the embodiments of this application, such as "up," "down," "front," "back," "left," "right," "inner," "outer," and "side," are only for reference to the accompanying drawings. Therefore, the directional terms used are for illustrating and understanding the embodiments of this application, and not for limiting the embodiments of this application. In the various drawings, structurally similar units are represented by the same reference numerals. For clarity, the various parts in the drawings are not drawn to scale. Additionally, some related parts may not be shown in the drawings.

[0186] It should be understood that in the description of this application, terms such as "first" and "second" are used only to distinguish similar objects and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated.

[0187] It is understood that those skilled in the art, guided by the above embodiments, can combine various implementation methods in the above embodiments to obtain technical solutions with multiple implementation methods. The above descriptions are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

[0188] The foregoing has provided a detailed description of the micro LED device packaging structure, packaging method, and display device provided in this application. Specific examples have been used to illustrate the principles and implementation methods of this application; the descriptions of the embodiments above are merely for the purpose of aiding understanding this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there may be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A packaging structure for a miniature light-emitting diode device, characterized in that, include: A miniature light-emitting diode device, comprising an electrically connected miniature light-emitting diode chip and a driver chip; The packaging substrate includes a carrier plate and a circuit board connected to each other. The circuit board and the micro light-emitting diode device are disposed on a first side of the carrier plate. The micro light-emitting diode chip and the driver chip are stacked sequentially on the carrier plate. The circuit board is electrically connected to the driver chip through an electrical connector. The carrier plate is a heat dissipation substrate. and A light-transmitting film structure is disposed on the first side of the carrier plate and continuously covers the surface and outer periphery of the micro light-emitting diode device, as well as at least a portion of the surface of the encapsulation substrate.

2. The packaging structure according to claim 1, characterized in that, The packaging structure further includes: An encapsulating colloid is used to encapsulate the electrical connector; wherein... The light-transmitting film structure includes a first part, a second part, and a third part connected together. The first part covers a portion of the surface of the carrier plate, the second part covers the surface and outer periphery of the micro light-emitting diode device, and the third part covers the surface and outer periphery of the encapsulating colloid. Alternatively, in the stacking direction of the micro light-emitting diode device and the encapsulating substrate, the third part is disposed between the encapsulating substrate and the encapsulating colloid.

3. The packaging structure according to claim 1, characterized in that, The carrier plate includes a first end and a second end disposed opposite to each other; the circuit board is provided with a first terminal structure electrically connected to the electrical connector, the first terminal structure being stacked and connected to the first end; wherein... The encapsulation structure includes an encapsulation region extending from the first terminal structure to the second end, and the light-transmitting film structure covers the surface and outer periphery of the encapsulation region.

4. The packaging structure according to claim 3, characterized in that, The packaging structure further includes: An encapsulating colloid is used to encapsulate the electrical connector; wherein... The light-transmitting film structure covers the encapsulating colloid; or, in the stacking direction of the micro-light-emitting diode device and the encapsulating substrate, a portion of the light-transmitting film structure is disposed between the encapsulating substrate and the encapsulating colloid.

5. The packaging structure according to claim 1, characterized in that, The light-transmitting film structure includes an inorganic film layer structure.

6. The packaging structure according to claim 1, characterized in that, The thickness of the light-transmitting film structure is greater than 0 nanometers and less than or equal to 200 nanometers.

7. The packaging structure according to claim 1, characterized in that, The light-transmitting film structure is a single-layer film structure, and the material of the light-transmitting film structure includes aluminum oxide or silicon dioxide.

8. The packaging structure according to claim 1, characterized in that, The light-transmitting film structure is a multilayer film structure.

9. The packaging structure according to claim 8, characterized in that, In the stacking direction of the micro light-emitting diode device and the packaging substrate, the light-transmitting film structure includes at least one set of stacked first film layers and second film layers; The first film layer is located between the micro light-emitting diode device and the second film layer, and the refractive index of the first film layer is greater than that of the second film layer.

10. The packaging structure according to claim 9, characterized in that, The light-transmitting film structure is a double-layer film structure, wherein the first film layer is made of tantalum pentoxide and the second film layer is made of silicon dioxide.

11. The packaging structure according to claim 9, characterized in that, The light-transmitting film structure is a four-layer film structure. The first film layer is made of zirconium pentoxide, and the second film layer is made of aluminum oxide.

12. The packaging structure according to any one of claims 1 to 11, characterized in that, The miniature light-emitting diode chip includes a light-emitting area and a non-light-emitting area; The packaging structure further includes: A light-shielding structure is disposed on the side of the light-transmitting film structure opposite to the micro light-emitting diode chip, and the orthogonal projection of the light-shielding structure onto the light-transmitting film structure covers the orthogonal projection of the non-light-emitting area onto the light-transmitting film structure.

13. The packaging structure according to any one of claims 1 to 11, characterized in that, The packaging structure further includes: The reinforcing colloid is disposed on the side of the circuit board away from the micro light-emitting diode device, in a region adjacent to the connection area between the circuit board and the carrier plate.

14. The packaging structure according to any one of claims 1 to 11, characterized in that, The packaging substrate further includes reinforcing sheets and a second terminal structure disposed on opposite sides of the circuit board, wherein the projection of the reinforcing sheets on the circuit board covers the projection of the second terminal structure on the circuit board.

15. A method for packaging a miniature light-emitting diode device, characterized in that, include: A miniature light-emitting diode device is provided, the miniature light-emitting diode device comprising a miniature light-emitting diode chip and a driver chip electrically connected; A packaging substrate is provided, the packaging substrate including a carrier plate and a circuit board connected to each other, the circuit board being disposed on a first side of the carrier plate, and the carrier plate being a heat dissipation substrate; The micro LED chip and the driver chip are stacked sequentially on the first side of the carrier plate, and the circuit board is electrically connected to the driver chip through an electrical connector. A continuous light-transmitting film structure is formed on the first side of the carrier plate, and on the surface and outer periphery of the micro light-emitting diode device, and on at least a portion of the surface of the packaging substrate, thereby forming a micro light-emitting diode device packaging structure.

16. The packaging method according to claim 15, characterized in that, Prior to the step of forming a continuous light-transmitting film structure on the surface and outer periphery of the micro-light-emitting diode device and at least a portion of the surface of the packaging substrate, the packaging method further includes: Forming an encapsulating colloid encapsulating the electrical connector; The formation of a continuous light-transmitting film structure on the surface and outer periphery of the micro-light-emitting diode device, and on at least a portion of the surface of the packaging substrate, includes: A continuous light-transmitting film structure is formed on a portion of the surface of the carrier plate, the surface and outer periphery of the micro light-emitting diode device, and the surface and outer periphery of the encapsulating colloid, thus forming a micro light-emitting diode device encapsulation structure.

17. The packaging method according to claim 15, characterized in that, The process of forming a continuous light-transmitting film structure on the surface and outer periphery of the micro-light-emitting diode device, and on at least a portion of the surface of the packaging substrate, and forming a micro-light-emitting diode device packaging structure, includes: A continuous light-transmitting film structure is formed on the surface and outer periphery of the micro light-emitting diode device, as well as on at least a portion of the surface of the packaging substrate; An encapsulating colloid is formed to encapsulate the electrical connector, and the encapsulating colloid covers part of the light-transmitting film structure, thus forming a micro light-emitting diode device encapsulation structure.

18. The packaging method according to claim 15, characterized in that, The carrier plate includes a first end and a second end disposed opposite to each other; the circuit board is provided with a first terminal structure electrically connected to the electrical connector, the first terminal structure being stacked and connected to the first end; The formation of a continuous light-transmitting film structure on the surface and outer periphery of the micro-light-emitting diode device, and on at least a portion of the surface of the packaging substrate, includes: The transparent film structure covers the surface and outer periphery of the encapsulation area extending from the first terminal structure to the second end.

19. The packaging method according to claim 15, characterized in that, The light-transmitting film structure includes an inorganic film layer structure.

20. The packaging method according to claim 15, characterized in that, The thickness of the light-transmitting film structure is greater than 0 nanometers and less than or equal to 200 nanometers.

21. The packaging method according to claim 15, characterized in that, The light-transmitting film structure is a single-layer film structure, and the material of the light-transmitting film structure includes aluminum oxide or silicon dioxide.

22. The packaging method according to claim 15, characterized in that, The light-transmitting film structure is a multilayer film structure.

23. The packaging method according to claim 22, characterized in that, In the stacking direction of the micro light-emitting diode device and the packaging substrate, the light-transmitting film structure includes at least one set of stacked first film layers and second film layers; The first film layer is located between the micro light-emitting diode device and the second film layer, and the refractive index of the first film layer is greater than that of the second film layer.

24. The packaging method according to claim 23, characterized in that, The light-transmitting film structure is a double-layer film structure, wherein the first film layer is made of tantalum pentoxide and the second film layer is made of silicon dioxide.

25. The packaging method according to claim 23, characterized in that, The light-transmitting film structure is a four-layer film structure. The first film layer is made of zirconium pentoxide, and the second film layer is made of aluminum oxide.

26. The packaging method according to any one of claims 15 to 25, characterized in that, The miniature light-emitting diode chip includes a light-emitting area and a non-light-emitting area; After the step of forming a continuous light-transmitting film structure on the surface and outer periphery of the micro-light-emitting diode device and at least a portion of the surface of the packaging substrate, the packaging method further includes: A light-shielding structure is provided on the side of the light-transmitting film structure opposite to the micro light-emitting diode chip, and the positive projection of the light-shielding structure on the light-transmitting film structure covers the positive projection of the non-light-emitting area on the light-transmitting film structure.

27. A display device, characterized in that, The display device includes the packaging structure as described in any one of claims 1 to 14; or, the display device includes the packaging structure prepared by the packaging method as described in any one of claims 15 to 26.

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