Reinforcing plate, method for manufacturing the same, and electronic device

Abstract

The application provides a reinforcing plate and a preparation method thereof and an electronic device, relates to the technical field of terminals, and the reinforcing plate comprises a base body and a ceramic stack, the ceramic stack is located on at least one side surface of the base body, the material of the ceramic stack is a ceramic material, the ceramic stack comprises at least a transition layer and a dense ceramic layer, the transition layer is located between the base body and the dense ceramic layer, the dense ceramic layer has a plurality of first pores which are discrete and spaced, and the porosity of the plurality of first pores is less than or equal to 0.5%; the transition layer is not flat, the surface of the transition layer on the side close to the dense ceramic layer is connected with the dense ceramic layer and is matched in shape, and the surface of the transition layer on the side close to the base body is connected with the base body and is matched in shape. Therefore, the thickness and weight of the reinforcing plate can be reduced on the premise that the overall Young's modulus and stiffness of the reinforcing plate are unchanged.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of terminal, in particular to a reinforcing plate, a preparation method thereof and an electronic device. BACKGROUND

[0002] With the rapid development of electronic devices such as mobile phones, the thin plate structure in electronic devices has made great progress, but at the same time, new problems have been encountered.

[0003] At present, the thin plate structure suitable for various reinforcing scenarios such as screen back plate and insert is usually stainless steel thin plate structure, aluminum alloy thin plate structure, etc., but the cost of stainless steel thin plate structure is high, and it is not conducive to weight reduction of electronic devices, and the thickness of aluminum alloy thin plate structure is large under the same stiffness, which cannot realize the thinning of electronic devices.

[0004] Therefore, it is urgent to provide a thin plate structure to solve the above problems. SUMMARY

[0005] The present application provides a reinforcing plate, a preparation method thereof and an electronic device, the reinforcing plate has a ceramic laminate well combined with the base body on the base body, when the plurality of surfaces of the base body have the ceramic laminate, more stress can be borne by the hard ceramic laminate in the stress process, and the deformation degree under external force is reduced, thereby effectively improving the stiffness of the base body, and under the premise of ensuring the overall Young's modulus and stiffness of the reinforcing plate, the thickness and weight thereof can also be reduced.

[0006] To achieve the above purpose, the present application adopts the following technical solutions:

[0007] In a first aspect, a reinforcing plate is provided, which includes a base body and a ceramic laminate, the ceramic laminate is located on at least one side surface of the base body, the material of the ceramic laminate is ceramic material, the ceramic laminate at least includes a transition layer and a dense ceramic layer, the transition layer is located between the base body and the dense ceramic layer, the dense ceramic layer has a plurality of discrete and spaced first pores, the porosity of the plurality of first pores is less than or equal to 0.5%, the transition layer is not flat, the surface of the transition layer close to the dense ceramic layer is a first surface, the surface of the transition layer close to the base body is a second surface, the first surface is connected with the surface of the dense ceramic layer close to the transition layer and matches in shape, and the second surface is connected with the surface of the base body close to the transition layer and matches in shape.

[0008] The embodiment of the present application provides a reinforcing plate, after the surface layer of the base body of the reinforcing plate is vitrified, the base body has a ceramic layer combined well with the base body, at this time, the ceramic layer at least includes a transition layer and a dense ceramic layer, the transition layer can be embedded with the dense ceramic layer, so that when a plurality of surfaces of the base body have the ceramic layer, a sandwich structure of ceramic clamping the base body can be obtained, the sandwich structure can bear more stress by the hard ceramic layer in the stress process, the deformation degree under the action of external force is reduced, so that the rigidity is effectively improved, and the thickness and weight of the reinforcing plate can be reduced under the premise of ensuring the overall Young's modulus and rigidity of the reinforcing plate.

[0009] In a possible implementation manner of the first aspect, the reinforcing plate comprises: a base body and a ceramic layer, the ceramic layer is located on at least one side surface of the base body, the material of the ceramic layer is ceramic material, the ceramic layer comprises a transition layer and a dense ceramic layer, the transition layer is located between the base body and the dense ceramic layer, the dense ceramic layer has a plurality of first pores which are discrete and spaced, the porosity of the plurality of first pores is less than or equal to 0.5%, the transition layer is not flat, a surface of the transition layer close to the dense ceramic layer is a first surface, a surface of the transition layer close to the base body is a second surface, the first surface is connected with and matches the shape of a surface of the dense ceramic layer close to the transition layer, and the second surface is connected with and matches the shape of a surface of the base body close to the transition layer.

[0010] In the implementation manner, after the surface layer of the base body of the reinforcing plate is vitrified, the base body has a ceramic layer combined well with the base body, the ceramic layer includes a transition layer and a dense ceramic layer, the transition layer can be embedded with the dense ceramic layer, so that when a plurality of surfaces of the base body have the ceramic layer, a sandwich structure of ceramic clamping the base body can be obtained, the sandwich structure can bear more stress by the hard ceramic layer in the stress process, the deformation degree under the action of external force is reduced, so that the rigidity of the base body is effectively improved, and the thickness and weight of the reinforcing plate can be reduced under the premise of ensuring the overall Young's modulus and rigidity of the reinforcing plate.

[0011] In a possible implementation manner of the first aspect, the reinforcing plate comprises: a base body and a ceramic layer, the ceramic layer includes: a transition layer, a dense ceramic layer and a surface loose layer; the transition layer is located between the base body and the dense ceramic layer, the dense ceramic layer has a plurality of first pores which are discrete and spaced, the porosity of the plurality of first pores is less than or equal to 0.5%, the transition layer is not flat, a surface of the transition layer close to the dense ceramic layer is a first surface, a surface of the transition layer close to the base body is a second surface, the first surface is connected with and matches the shape of a surface of the dense ceramic layer close to the transition layer, and the second surface is connected with and matches the shape of a surface of the base body close to the transition layer; the surface loose layer is located on a side of the dense ceramic layer away from the transition layer, the surface loose layer is connected with the dense ceramic layer, the surface loose layer has a plurality of second pores which are discrete and spaced, and the porosity of the plurality of second pores ranges from 5% to 15%.

[0012] In this implementation, the reinforcing plate has a ceramic layer combined well with the substrate after the surface layer of the substrate is vitrified, and when the plurality of surfaces of the substrate have the ceramic layer, a sandwich structure of ceramic layer sandwiching the substrate is obtained, and the surface loose layer, the dense ceramic layer, the transition layer and the substrate are tightly combined, and in the stress process, the ceramic layer can bear more stress, and the deformation degree under the external force is reduced, so that the stiffness of the substrate is effectively improved, and since the Young's modulus of the ceramic layer is high, the thickness of the reinforcing plate can be reduced and the mass is reduced under the condition of obtaining the same Young's modulus and stiffness, and the weight is lighter than that of the traditional stainless steel material, and the size is thinner than that of the traditional pure metal substrate.

[0013] In a possible implementation of the first aspect, the substrate is a light metal substrate.

[0014] In this implementation, the thin metal substrate has a ceramic layer combined well with the substrate after the surface layer of the thin metal is vitrified, and when the plurality of surfaces of the thin metal substrate have the ceramic layer, a sandwich structure of ceramic layer sandwiching the thin metal is obtained, and at least the dense ceramic layer, the transition layer and the substrate are tightly combined, and in the stress process, the ceramic layer can bear more stress, and the deformation degree under the external force is reduced, so that the stiffness of the thin metal substrate is effectively improved, and since the Young's modulus of the ceramic layer is high, the thickness of the reinforcing plate can be reduced and the mass is reduced under the condition of obtaining the same Young's modulus and stiffness, and the weight is lighter than that of the traditional stainless steel material, and the size is thinner than that of the pure metal substrate.

[0015] In a possible implementation of the first aspect, the light metal includes any one of aluminum, titanium, zirconium and the like.

[0016] In this implementation, the light metal is convenient to select and suitable in price.

[0017] In a possible implementation of the first aspect, the thickness of the light metal substrate ranges from 0.05mm to 0.6mm.

[0018] In the implementation, the base body is thin, and after the thin metal surface layer is vitrified, the ceramic layer is combined with the thin metal base body, and when the plurality of surfaces of the thin metal base body have the ceramic layer, a sandwich structure of ceramic layer sandwiching thin metal is obtained, at least the dense ceramic layer is combined with the transition layer, and the transition layer is combined with the base body, in the stress process, more stress can be borne by the hard ceramic layer, the deformation degree under external force is reduced, the stiffness of the thin metal base body is effectively improved, and in the case of obtaining the same Young's modulus and stiffness, the thickness of the reinforcing plate can be reduced and the mass of the reinforcing plate is reduced.

[0019] In a possible implementation of the first aspect, the ceramic layer is located on the upper surface and the lower surface of the base body.

[0020] In the implementation, after the upper surface and the lower surface of the base body are vitrified, a sandwich structure of ceramic layer sandwiching base body is obtained, the surface loose layer in the sandwich structure is combined with the dense ceramic layer, the dense ceramic layer is combined with the transition layer, and the transition layer is combined with the base body, in the stress process, more stress can be borne by the hard ceramic layer, the deformation degree under external force is reduced, and the stiffness of the base body is more effectively improved.

[0021] In a possible implementation of the first aspect, the ceramic material can include at least one of alumina ceramic, titanium oxide ceramic, zirconium oxide ceramic, silicon carbide ceramic, titanium carbide ceramic, and yttrium oxide ceramic.

[0022] In the implementation, the ceramic material has high density, high hardness, and high Young's modulus.

[0023] In a possible implementation of the first aspect, the transition layer is in a wavy corrugated shape.

[0024] In the implementation, the transition layer in the wavy corrugated shape is combined with the base body and the dense ceramic layer respectively, in the stress process, more stress can be borne by the hard ceramic layer, the deformation degree under external force is reduced, and the stiffness of the base body is more effectively improved.

[0025] In a possible implementation of the first aspect, the surface loose layer is in a wavy corrugated shape.

[0026] In the implementation, the undulating corrugated surface loose layer can be closely combined with the dense ceramic layer, and can bear more stress from the hard ceramic laminate during stress, thereby reducing the deformation degree under external force, and more effectively improving the rigidity of the base body. Since the Young's modulus of the ceramic laminate is high, the thickness of the reinforcing plate can be reduced and the mass thereof can be reduced under the condition of obtaining the same Young's modulus and rigidity.

[0027] In a possible implementation of the first aspect, the roughness of the surface loose layer can be 2-3 microns.

[0028] In the implementation, the relatively rough surface loose layer is not easy to separate from the dense ceramic layer during stress, and the rigidity of the base body is more effectively improved. Since the Young's modulus of the ceramic laminate is high, the thickness of the reinforcing plate can be reduced and the mass thereof can be reduced under the condition of obtaining the same Young's modulus and rigidity.

[0029] In a possible implementation of the first aspect, the light metal of the light metal base body is the same as the ceramic material of the ceramic laminate.

[0030] In the implementation, it is simple and easy to implement.

[0031] In a possible implementation of the first aspect, the ratio of the thickness of the ceramic laminate to the thickness of the reinforcing plate in the direction perpendicular to the base body is 10%-60%.

[0032] In the implementation, a relatively thick ceramic laminate can be formed, which forms a ceramic sandwich metal sandwich structure with the base body, thereby improving the rigidity of the base body, reducing the thickness of the original metal material under the premise of ensuring the Young's modulus and rigidity of the overall material, for example, an aluminum alloy with a ceramic laminate structure can replace stainless steel material in related scenarios, achieving the purpose of thinning and reducing the weight of the whole machine.

[0033] In a possible implementation of the first aspect, the ratio of the thickness of the base body to the thickness of the reinforcing plate is 40%-90%.

[0034] In the implementation, the base body is relatively thin, and the ceramic laminate forms a ceramic sandwich metal sandwich structure with the base body, thereby improving the rigidity of the thin base body, reducing the thickness of the original metal material under the premise of ensuring the Young's modulus and rigidity of the overall material, for example, an aluminum alloy with a ceramic laminate structure can replace stainless steel material in related scenarios, achieving the purpose of thinning and reducing the weight of the whole machine.

[0035] In a possible implementation of the first aspect, the ratio of the thickness of the transition layer to the thickness of the ceramic laminate in the direction perpendicular to the base body is 0.1%-5%.

[0036] In the implementation, the transition layer is thin, and the transition layer can be tightly combined with the base body and the dense ceramic layer respectively, can bear more stress in the process of force, reduces the deformation degree under the action of external force, more effectively improves the rigidity of the base body, and because the Young's modulus of the ceramic layer is high, the thickness of the reinforcing plate can be reduced and the mass of the reinforcing plate can be reduced in the case of obtaining the same Young's modulus and rigidity.

[0037] In a possible implementation of the first aspect, the thickness of the transition layer ranges from 0.1 μm to 1 μm in the direction perpendicular to the base body.

[0038] In the implementation, the transition layer is thin, and the transition layer can be tightly combined with the base body and the dense ceramic layer respectively, can bear more stress in the process of force, reduces the deformation degree under the action of external force, more effectively improves the rigidity of the base body, and because the Young's modulus of the ceramic layer is high, the thickness of the reinforcing plate can be reduced and the mass of the reinforcing plate can be reduced in the case of obtaining the same Young's modulus and rigidity.

[0039] In a possible implementation of the first aspect, the ratio of the thickness of the dense ceramic layer to the thickness of the Al2O3 ceramic layer ranges from 90% to 95%.

[0040] In the implementation, the dense ceramic layer is thick, and is a functional area mainly bearing the improvement of rigidity and the improvement of Young's modulus, and the dense ceramic layer is tightly combined with the transition layer and the surface loose layer respectively, can bear more stress in the process of force, reduces the deformation degree under the action of external force, more effectively improves the rigidity of the base body, and because the Young's modulus of the ceramic layer is high, the thickness of the reinforcing plate can be reduced and the mass of the reinforcing plate can be reduced in the case of obtaining the same Young's modulus and rigidity.

[0041] In a possible implementation of the first aspect, the thickness of the dense ceramic layer ranges from 10 μm to 80 μm in the direction perpendicular to the base body.

[0042] In the implementation, the dense ceramic layer is thick, and is a functional area mainly bearing the improvement of rigidity and the improvement of Young's modulus, and the dense ceramic layer is tightly combined with the transition layer and the surface loose layer respectively, can bear more stress in the process of force, reduces the deformation degree under the action of external force, more effectively improves the rigidity of the base body, and because the Young's modulus of the ceramic layer is high, the thickness of the reinforcing plate can be reduced and the mass of the reinforcing plate can be reduced in the case of obtaining the same Young's modulus and rigidity.

[0043] In a possible implementation of the first aspect, the ratio of the thickness of the surface loose layer to the thickness of the Al2O3 ceramic layer ranges from 0.1% to 5%.

[0044] In the implementation, the surface loose layer is thin, can be tightly combined with the dense ceramic layer, can bear more stress in the stress process by the hard ceramic layer, reduces the deformation degree under the external force, more effectively improves the rigidity of the substrate, and because the Young's modulus of the ceramic layer is high, the thickness of the reinforcing plate can be reduced and the mass thereof can be reduced in the case of obtaining the same Young's modulus and rigidity.

[0045] In a possible implementation of the first aspect, the thickness of the surface loose layer ranges from 0.1 μm to 1 μm in the direction perpendicular to the substrate.

[0046] In the implementation, the surface loose layer is thin, can be tightly combined with the dense ceramic layer, can bear more stress in the stress process by the hard ceramic layer, reduces the deformation degree under the external force, more effectively improves the rigidity of the substrate, and because the Young's modulus of the ceramic layer is high, the thickness of the reinforcing plate can be reduced and the mass thereof can be reduced in the case of obtaining the same Young's modulus and rigidity.

[0047] In a possible implementation of the first aspect, the Vickers hardness of the ceramic layer is greater than or equal to 1000 HV.

[0048] In the implementation, the Vickers hardness of the ceramic layer is very large.

[0049] In a possible implementation of the first aspect, when the 10 μm alumina ceramic layer is prepared on both sides of the 0.2 mm Al alloy substrate, the Young's modulus of the reinforcing plate is 74.7 GPa.

[0050] In the implementation, the reinforcing plate can have the advantages of light mass, excellent rigidity, and high Young's modulus, so that when applied in the electronic device, the electronic device can have high Young's modulus and excellent rigidity without being too heavy and thick, and has very excellent performance.

[0051] In a possible implementation of the first aspect, when the 20 μm alumina ceramic layer is prepared on both sides of the 0.2 mm Al alloy substrate, the Young's modulus of the reinforcing plate is 79.4 GPa.

[0052] In the implementation, the reinforcing plate can have the advantages of light mass, excellent rigidity, and high Young's modulus, so that when applied in the electronic device, the electronic device can have high Young's modulus and excellent rigidity without being too heavy and thick, and has very excellent performance.

[0053] In a possible implementation of the first aspect, when the 30 μm alumina ceramic layer is prepared on both sides of the 0.2 mm Al alloy substrate, the Young's modulus of the reinforcing plate is 87.7 GPa.

[0054] In the implementation, the reinforcing plate has the advantages of light weight, excellent rigidity, high Young's modulus, etc., so that when applied in the electronic device, the electronic device has high Young's modulus and excellent rigidity, and is not too heavy and thick, and has excellent performance.

[0055] In a second aspect, an electronic device is provided, which includes the reinforcing plate in the first aspect or any possible implementation manner of the first aspect.

[0056] Embodiments of the present application provide an electronic device, which has the effects of thinning and reducing weight of the whole machine.

[0057] In a possible implementation manner of the second aspect, the electronic device includes a middle frame, and the reinforcing plate, the adhesive, the reinforcing plate, the adhesive, the display screen, the adhesive, the cover plate and the protective layer are sequentially stacked on the middle frame.

[0058] In the implementation, the electronic device has the effects of thinning and reducing weight of the whole machine.

[0059] In a possible implementation manner of the second aspect, the electronic device includes foam, plastic, the reinforcing plate and the adhesive.

[0060] In the implementation, the electronic device has the effects of thinning and reducing weight of the whole machine.

[0061] In a possible implementation manner of the second aspect, the electronic device includes the locking ear, the reinforcing plate, the adhesive, the circuit board assembly and the surface film.

[0062] In the implementation, the electronic device has the effects of thinning and reducing weight of the whole machine.

[0063] In a third aspect, a preparation method of a reinforcing plate is provided, which is used for preparing the reinforcing plate in the first aspect or any possible implementation manner of the first aspect.

[0064] The preparation method of the reinforcing plate includes:

[0065] A base body is provided.

[0066] A plurality of holes are formed on at least one side surface of the base body.

[0067] The holes do not penetrate the base body.

[0068] A ceramic material is filled in the holes to form a first structure.

[0069] The first structure is sintered to form the reinforcing plate with a ceramic stack.

[0070] The ceramic stack is located on at least one side surface of the base body, the material of the ceramic stack is ceramic material, the ceramic stack at least includes a transition layer and a dense ceramic layer, the transition layer is located between the base body and the dense ceramic layer, the dense ceramic layer has a plurality of first pores which are discrete and spaced, and the porosity of the plurality of first pores is less than or equal to 0.5%; the transition layer is not flat, the surface of the transition layer close to the dense ceramic layer is connected with the dense ceramic layer and has a matched shape, and the surface of the transition layer close to the base body is connected with the base body and has a matched shape.

[0071] The embodiment of the present application provides a preparation method of a reinforcing plate. A ceramic stack which is dense and well combined with a thin plate metal is prepared on the surface of the thin plate metal through a porcelainization process. The sandwich structure is formed by wrapping the intermediate thin layer metal with the ceramic stack. Thus, the surface layer metal of the base body is replaced by the ceramic stack. In the stress process, more stress is borne by the hard ceramic stack. Compared with the traditional stainless steel material, the Young's modulus and the stiffness can be unchanged by the thin plate metal and the ceramic stack with a relatively thin thickness. When applied in electronic equipment, the purpose of reducing the weight of the whole machine can be achieved. Compared with the traditional pure alloy, the high Young's modulus and the stiffness can be achieved by the thin plate metal and the ceramic stack with a not too thin thickness. When applied in electronic equipment, the purpose of reducing the thickness of the whole machine can be achieved. In addition, the preparation method is simple and easy to implement, and is beneficial to industrial production.

[0072] In a possible implementation manner of the third aspect, the pore size of the hole ranges from 200 nm to 300 nm.

[0073] In the implementation manner, the hole formed on the base body is large, so that the ceramic powder can be better filled into the base body, and a thick ceramic stack is prepared. The ceramic stack forms a ceramic clad metal sandwich structure with the base body. In the sandwich structure, at least the dense ceramic layer and the transition layer, and the transition layer and the base body are tightly combined. In the stress process, more stress can be borne by the hard ceramic stack, the deformation degree under the external force is reduced, the stiffness of the thin metal base body is effectively improved, and because the Young's modulus of the ceramic stack is high, the thickness of the reinforcing plate can be reduced and the mass of the reinforcing plate can be reduced in the case of obtaining the same Young's modulus and stiffness. Compared with the traditional stainless steel material, a lighter weight is obtained, and compared with the pure metal base body, a lighter and thinner size is obtained.

[0074] In a possible implementation manner of the third aspect, the depth of the hole ranges from 10 μm to 120 μm.

[0075] In the implementation, the holes formed on the base are deep, so that the ceramic powder can be better filled into the base, and a thick ceramic stack is prepared, which forms a ceramic sandwich structure with the base, at least the dense ceramic layer and the transition layer are tightly combined with the base, and the transition layer, and in the stress process, the hard ceramic stack can bear more stress, and the deformation degree under external force is reduced, the stiffness of the thin metal base is effectively improved, and because the Young's modulus of the ceramic stack is high, the thickness of the reinforcing plate can be reduced and the mass can be reduced under the condition of obtaining the same Young's modulus and stiffness, so that a lighter weight is obtained compared with the traditional stainless steel material, and a thinner size is obtained compared with the pure metal base.

[0076] In a possible implementation of the third aspect, the method for manufacturing the reinforcing plate specifically includes:

[0077] S1. providing a base.

[0078] The base is a base that is not affected by punching and sintering.

[0079] S2. Forming a plurality of holes on the upper surface and the lower surface of the base, respectively.

[0080] The holes do not penetrate the base.

[0081] S4. Sintering the first structure to form a reinforcing plate with a ceramic stack.

[0082] The ceramic stack is located on the two side surfaces of the base, and the material of the ceramic stack is ceramic material.

[0083] In the implementation, a dense ceramic stack that is well combined with the thin plate metal is prepared on the surface of the thin plate metal through the porcelainization process, and a sandwich structure is formed by wrapping the intermediate thin layer of metal with the ceramic stack, so that the surface layer metal of the base is replaced by the ceramic stack, and in the stress process, the hard ceramic stack bears more stress, so that compared with the traditional stainless steel material, the same Young's modulus and stiffness can be achieved by the thin plate metal and the ceramic stack with a relatively thin thickness, and when applied in electronic equipment, the purpose of reducing the weight of the whole machine can be achieved, and compared with the traditional pure alloy, a higher Young's modulus and stiffness can be achieved by the thin plate metal and the ceramic stack with a relatively thin thickness, and when applied in electronic equipment, the purpose of reducing the thickness of the whole machine can be achieved. In addition, the preparation method is simple and easy to implement, and is conducive to industrial production.

[0084] In a possible implementation of the third aspect, the method for manufacturing the reinforcing plate specifically includes:

[0085] S11. Providing a cuboid base.

[0086] S12. The punching stage: a corrosion punching pool containing 180 g / L sulfuric acid is provided, and the cuboid substrate is fully immersed in the sulfuric acid through the support rod, so as to corrode the upper surface and the lower surface of the substrate which are not protected by the sulfuric acid, and form a plurality of inner surface uneven deep holes on the upper surface and the lower surface, respectively.

[0087] S13. The powder filling stage: a powder filling sintering pool is provided, which contains 10 g / L Na2SiO3 and 1 g / L KOH, and in addition, the powder filling sintering pool also contains 5 g / L Al2O3 aqueous solution (formed by uniformly dispersing Al2O3 powder in the aqueous solution) with good electrical conductivity, and the powder filling sintering pool also has stirring blades which continuously stir, and the powder filling sintering pool also has a power supply anode and a power supply cathode, and when power is turned on, the Al2O3 powder is deposited inside the deep hole under the driving force of the electric field.

[0088] S14. The sintering stage: the current parameter is adjusted to 10 A / dm 2 Under the action of the high temperature and high pressure generated by the arc discharge, complex physical and chemical changes occur, the surface layer metal of the un-punched cuboid substrate is oxidized by high temperature, and is sintered with the filled Al2O3 ceramic powder to form a dense ceramic laminate, which is firmly combined with the cuboid substrate, has a dense internal structure, high toughness, and good wear resistance and corrosion resistance.

[0089] In this implementation, the hole with a larger inner diameter and a deeper depth is prepared by a chemical method, and then the nano ceramic particles with good electrical conductivity are directly filled into the deep hole under the driving force of the electric field, which has a better effect, and the prepared ceramic laminate is thicker and denser, and the Vickers hardness of the sintered ceramic laminate is greater than 1000 HV, and can be as high as more than 2000 HV, so that the reinforcing plate has higher elastic modulus and better structural stiffness. Thus, the reinforcing plate can be directly used as an internal structural part, and when used as an appearance part, it can be subjected to subsequent processing through surface spraying and the like.

[0090] The embodiment of the present application provides a reinforcing plate and a preparation method thereof and an electronic device. The thin metal surface of the reinforcing plate is porcelainized, and the ceramic laminate is combined well on the thin metal substrate. When the ceramic laminate is on the surfaces of the thin metal substrate, a sandwich structure of the ceramic laminate and the thin metal can be obtained. In the sandwich structure, at least the dense ceramic layer is combined with the transition layer, and the transition layer is combined with the substrate. In the stress process, more stress can be borne by the hard ceramic laminate, the deformation degree under the external force is reduced, the rigidity of the thin metal substrate is effectively improved, and because the Young's modulus of the ceramic laminate is high, the thickness of the reinforcing plate can be reduced and the mass of the reinforcing plate can be reduced under the condition of obtaining the same Young's modulus and rigidity, so that the weight of the reinforcing plate is lighter than that of the traditional stainless steel material, and the size of the reinforcing plate is thinner than that of the pure metal substrate. When the reinforcing plate is applied to various reinforcing scenes in the electronic device, the whole machine can be thinned and the weight can be reduced. BRIEF DESCRIPTION OF DRAWINGS

[0091] Figure 1 A schematic diagram of the overall structure of an electronic device is provided in the embodiment of the present application.

[0092] Figure 2 A schematic diagram of the overall structure of an electronic device is provided in the embodiment of the present application. Figure 1 A schematic diagram of the overall structure of an electronic device is provided in the embodiment of the present application.

[0093] Figure 3 A schematic diagram of the structure of a flat U-shaped beam stainless steel hardware thin plate in the related art is provided in the embodiment of the present application.

[0094] Figure 4 A schematic diagram of the structure of a flat U-shaped beam stainless steel hardware thin plate in the related art is provided in the embodiment of the present application. Figure 3 A schematic diagram of the structure of a flat U-shaped beam stainless steel hardware thin plate in the related art is provided in the embodiment of the present application.

[0095] Figure 5 A schematic diagram of the structure of a flat U-shaped beam stainless steel hardware thin plate in the related art is provided in the embodiment of the present application.

[0096] Figure 6 A schematic diagram of the structure of a flat U-shaped beam stainless steel hardware thin plate in the related art is provided in the embodiment of the present application.

[0097] Figure 7 A schematic diagram of the structure of a flat U-shaped beam stainless steel hardware thin plate in the related art is provided in the embodiment of the present application.

[0098] Figure 8 A schematic diagram of the structure of a flat U-shaped beam stainless steel hardware thin plate in the related art is provided in the embodiment of the present application.

[0099] Figure 9 A schematic diagram of the structure of a flat U-shaped beam stainless steel hardware thin plate in the related art is provided in the embodiment of the present application.

[0100] Figure 10 A schematic diagram of the structure of a flat U-shaped beam stainless steel hardware thin plate in the related art is provided in the embodiment of the present application.

[0101] Figure 11 A stress analysis schematic diagram of a section of a reinforcing plate provided for an embodiment of the present application;

[0102] Figure 12 Another stress analysis schematic diagram of a section of a reinforcing plate provided for an embodiment of the present application;

[0103] Figure 13 A surface morphology diagram of a pure aluminum alloy in a related technology provided for an embodiment of the present application;

[0104] Figure 14 A surface morphology diagram of a reinforcing plate provided for an embodiment of the present application;

[0105] Figure 15 A preparation process flow diagram of a reinforcing plate provided for an embodiment of the present application;

[0106] Figure 16 Another preparation process flow diagram of a reinforcing plate provided for an embodiment of the present application;

[0107] Figure 17 A schematic diagram of a reinforcing plate provided for an embodiment of the present application;

[0108] Figure 18 Another schematic diagram of a reinforcing plate provided for an embodiment of the present application;

[0109] Figure 19 A structural schematic diagram of an electronic device provided for an embodiment of the present application;

[0110] Figure 20 Another structural schematic diagram of an electronic device provided for an embodiment of the present application;

[0111] Figure 21 Still another structural schematic diagram of an electronic device provided for an embodiment of the present application;

[0112] Figure 22 Still another structural schematic diagram of an electronic device provided for an embodiment of the present application.

[0113] Reference signs:

[0114] 01 - mobile phone; 100 - display screen; 101 - middle frame; 102 - back shell; 103 - circuit board assembly; 1031 - main circuit board; 1032 - electronic element; 104 - battery;

[0115] 106 - U-shaped beam stainless steel hardware sheet;

[0116] 02 - reinforcing plate; 1 - base body; 2 - ceramic laminate; 21 - transition layer; 22 - dense ceramic layer; 23 - surface loose layer; m1 - first surface; m2 - second surface;

[0117] x - second aperture; k - hole;

[0118] 4 - ceramic material; 5 - etching punch pool; 7 - support rod; 8 - powder filling sintering pool; 9 - stirring blade; 10 - power anode; 11 - power cathode;

[0119] 12 - adhesive; 13 - cover plate; 14 - protective layer; 16 - foam; 17 - plastic; 19 - backlight module; 20 - surface film; 22 - locking ear. DETAILED DESCRIPTION

[0120] Unless otherwise defined, technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application; the terms "comprising" and "having," and variations thereof, as used herein are intended to cover a non-exclusive inclusion.

[0121] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features.

[0122] Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The occurrence of the phrase "in an embodiment" at various locations in the specification does not necessarily all refer to the same embodiment, nor is it necessary that a particular feature, structure, or characteristic be included in every embodiment.

[0123] In the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which can represent the three cases of A alone, A and B together, and B alone.

[0124] In addition, the character " / " herein generally represents an "or" relationship between the associated objects before and after it.

[0125] In the embodiments of the present application, the meaning of "a plurality of" is two or more (including two), and similarly, "a plurality of groups" means two or more groups (including two groups), and "a plurality of layers" means two or more layers (including two layers), unless otherwise specified and limited.

[0126] In the embodiments of the present application, the meaning of "at least one" is one or more than one.

[0127] In the embodiments of the present application, the technical terms "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and the like, and cannot be understood as a limitation on the embodiments of the present application.

[0128] In the embodiments of the present application, the technical terms "mounting", "connection", "connection", "fixing" and the like should be understood broadly, for example, can be fixed connection, can also be detachable connection, or integrated; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be the communication between two elements or the interaction between two elements. Those skilled in the art can understand the specific meanings of the above terms in the embodiments of the present application according to the specific circumstances.

[0129] The following explains some terms in the embodiments of the present application, so that those skilled in the art can better understand them.

[0130] 1. Arc discharge process

[0131] Arc discharge process refers to a discharge phenomenon that presents arc-shaped white light and produces high-temperature gas.

[0132] No matter in rare gas, metal vapor or atmosphere, when the power of the power supply is large, a large enough current (a few to tens of amperes) can be provided to make the gas breakdown, emit strong light, and produce high temperature (several thousand to tens of thousands of degrees). This form of self-sustaining discharge of gas is arc discharge.

[0133] 2. Micro-arc oxidation process

[0134] Micro-arc oxidation process refers to the growth of a modified ceramic coating mainly composed of base metal oxides and supplemented by electrolyte components on the surface of metal and its alloy under the action of instantaneous high temperature and high pressure generated by arc discharge, by matching and adjusting the electrolyte and the electrical parameters.

[0135] The micro-arc oxidation process introduces the working area from the Faraday area of ordinary anodic oxidation to the high-voltage discharge area, overcomes the defects of hard anodic oxidation, and greatly improves the comprehensive performance of the film layer.

[0136] 3. Vickers hardness

[0137] The Vickers hardness is a standard for indicating the hardness of a material, which refers to a diamond pyramid indenter with a relative angle of 136° between opposite faces is pressed into the surface of the material to be tested under a specified load, the load is removed after a specified time, the diagonal length of the indentation is measured, the surface area of the indentation is calculated, and finally the average pressure on the surface area of the indentation is obtained, which is the Vickers hardness value of the material to be tested, denoted by symbol HV.

[0138] 4. Moment of inertia

[0139] The moment of inertia is a geometric quantity, which is usually used to describe the resistance of a cross section to bending.

[0140] 5. AF layer

[0141] The AF layer adopts a special coating material, which can effectively absorb the grease and sweat left by fingerprints, so that the traces left by fingerprints are very weak; at the same time, it can also prevent the traces left by fingerprints from being found and copied by others, thereby improving the security and accuracy of fingerprint identification.

[0142] The above is a brief introduction to the terms involved in the embodiments of the present application, which will not be repeated hereinafter.

[0143] In modern life, the role of electronic devices such as notebook computers and mobile phones is becoming more and more important, and they are gradually becoming one of the necessities of people's life.

[0144] The embodiments of the present application provide an electronic device, and the specific type of the electronic device is not limited here. In some embodiments, the electronic device provided by the present application can include consumer electronics, home electronics, vehicle-mounted electronics, financial terminal electronics and communication electronics, etc.

[0145] The consumer electronic product can include a mobile phone, a pad, a laptop, a notebook computer, a handheld computer, a personal computer (PC), an electronic reader, a desktop display, a cellular phone, a drone, a personal digital assistant (PDA), a smart wearable device (for example, a smart bracelet, a smart watch, a headset, etc.), an ultra-mobile personal computer (UMPC), an internet of things (IOT) device such as an augmented reality (AR) / virtual reality (VR) device, and the like; the home electronic product can include a television, a smart door lock, a remote controller, a refrigerator, a charging household small appliance (for example, a soybean milk machine, a sweeping robot, etc.), a printer, a projector, and the like; the vehicle-mounted electronic product can include a vehicle-mounted navigation device, a vehicle-mounted high-density digital video disc (DVD), and the like; the financial terminal electronic product can include an automated teller machine (ATM), a self-service terminal, and the like; the communication electronic product can include a server, a memory, a base station, and the like.

[0146] For the convenience of description, please refer to Figure 1 and Figure 2 , Figure 1 the overall schematic diagram of an electronic device to which some embodiments of the present application are applicable, Figure 2 the exploded schematic diagram of the electronic device shown in Figure 1 . Among them, Figure 1 and Figure 2 the electronic devices shown in

[0147] In some other embodiments, the electronic device can also be other types of mobile phones, such as foldable mobile phones, etc.

[0148] It can be understood that Figure 1 and Figure 2 and the related drawings below only schematically show some components in the electronic device, and the actual shape, size, position, and structure of these components are not limited by Figure 1 and Figure 2 and the drawings below.

[0149] The specific structure of the electronic device to which the embodiments of the present application are applicable is further described below.

[0150] Please refer toFigure 1 and Figure 2 Taking a mobile phone 01 as an example, the mobile phone 01 includes a display screen 100 and a middle frame 101, and the display screen 100 is located on one side of the middle frame 101.

[0151] In applications, the display screen 100 can be used to display images, videos, etc.

[0152] It should be noted that the display screen 100 can be any one of a liquid crystal display (LCD), an organic light emitting diode (OLED) display screen, a mini light emitting diode (Mini LED) display screen, a micro light emitting diode (Micro LED) display screen, etc.

[0153] As shown in Figure 2 , the mobile phone 01 further includes a light-transmitting cover plate 105, which can be stacked with the display screen 100 and mainly used for protecting and dustproofing the display screen 100.

[0154] In the embodiment shown in Figure 1 , the shape of the electronic device can be a rectangular flat plate. Of course, the shape of the electronic device can also be any other shape, which is subject to actual application.

[0155] Please refer to Figure 2 , the mobile phone 01 further includes a back shell 102, a circuit board assembly 103, a battery 104 and other structures.

[0156] Among them, the back shell 102 is arranged on the side of the middle frame 101 away from the display screen 100; and the back shell 102 and the middle frame 101 can enclose an internal accommodating space of the mobile phone 01, which can accommodate the circuit board assembly 103, the battery 104 and other structures.

[0157] Among them, the battery 104 can be used to provide power to the structures such as the display screen 100 and the circuit board assembly 103 in the mobile phone 01.

[0158] Further as shown in Figure 2 , the circuit board assembly 103 can include a main circuit board 1031 and electronic elements 1032. Among them, the main circuit board 1031 can be used to carry the electronic elements 1032 and complete signal interaction with the electronic elements 1032.

[0159] Figure 2The following explanation uses circuit board assembly 103, which includes two electronic components 1032, as an example. Of course, the number of electronic components 1032 is not limited to two; the specific number depends on the actual application.

[0160] In applications, the main circuit board 1031 may include printed circuit boards (PCBs), flexible printed circuit boards (FPCs), etc.

[0161] It should be understood that electronic component 1032 may include, but is not limited to, chips, resistors, capacitors, inductors, potentiometers, electron tubes, heat sinks, electromechanical components, connectors, semiconductor discrete devices, sensors, power supplies, switches, micro motors, electronic transformers, relays, subscriber identity module (SIM) card holders, etc.

[0162] In practical applications, the rear cover 102 may include a back cover ( Figure 2 (not shown in the middle), border ( Figure 2 Structures such as (not shown in the text).

[0163] The back cover can be located on the side of the display screen 100 away from the light-transmitting cover plate 105 and can be stacked with the light-transmitting cover plate 105 and the display screen 100.

[0164] The frame can be set between the back cover and the light-transmitting cover 105 and fixed to the back cover.

[0165] The light-transmitting cover 105 can be fixed to the frame.

[0166] In some embodiments, a battery mounting groove may be provided on the surface of the middle frame 101 facing the back cover. Figure 2 (Not shown in the image), battery 104 can be installed in the battery mounting slot, subject to the actual application.

[0167] In addition, the aforementioned mobile phone 01 may also include other structures such as a microphone, speaker, and camera. Only the content related to the inventive point will be introduced here, and the rest will not be described one by one.

[0168] Currently, electronic devices on the market require the use of many sheet metal structures, which are commonly used in various support and reinforcement applications. There are many types of sheet metal structures, with stainless steel sheet metal being one of them. The shape and other specifications of stainless steel sheet metal can be determined according to specific needs. Figure 3 A flat, U-shaped beam made of stainless steel sheet 106 is shown, which can be used as a flat panel frame. Figure 4 yes Figure 3The partial structure diagram of the stainless steel hardware sheet along F1F2 after cutting the flat plate H-beam stainless steel hardware sheet. It should be noted that, Figure 4 The dashed box in the above is because the overall structure of the H-beam stainless steel hardware sheet 106 is not drawn, but only a part of the structure is drawn, so the part in the dashed box is a partial structure diagram, and the boundary is indicated by a dashed line.

[0169] The stainless steel material of the above-mentioned stainless steel hardware sheet has the characteristics of high Young's modulus (for example, up to about 200 GPa) and excellent stiffness, so it can be applied to display backplane, mainboard support, keyboard bottom plate, PC touch support, etc., effectively increasing the bending resistance. However, the stainless steel material also has the characteristics of high density and heavy weight, which is very detrimental to the weight reduction of electronic devices when applied in electronic devices.

[0170] In order to solve the above problems, some light metal materials are often used to replace stainless steel materials in related technologies to achieve the weight reduction effect of electronic devices, and aluminum alloy material is one of the light metal materials. Although the aluminum alloy material has the advantages of low density, light weight, and good thermal conductivity, the Young's modulus of the aluminum alloy material itself is relatively low (for example, the Young's modulus can be about 70 GPa), so the thickness of the aluminum alloy material required to achieve the same stiffness as the stainless steel material is larger, which is contrary to the requirement of thinning the electronic device, thereby limiting the application of the aluminum alloy material in reinforcement and other scenarios.

[0171] Based on the above several examples, it can be seen that the density of the currently provided stainless steel material is high, and the cost is high, which is not conducive to the weight reduction and efficiency improvement of electronic devices; and the Young's modulus of the aluminum alloy material is insufficient, and the thickness required under the same stiffness is larger, which is not conducive to the thinning of the electronic device. Therefore, when the traditional reinforcement plate is applied to the electronic device, the stiffness, mass, Young's modulus and thickness cannot be considered, which leads to the fact that the electronic device cannot simultaneously achieve weight reduction and thinning, and the user experience is poor.

[0172] Therefore, the present application provides a reinforcement plate, which has a ceramic layer combined well with the metal substrate after the surface layer of the metal substrate is ceramized. Since at least the transition layer and the substrate are embedded in the ceramic layer, and the transition layer and the dense ceramic layer are embedded, more stress can be borne by the hard ceramic layer during stress, reducing the degree of deformation under external force. Thus, on the basis of the light weight of the reinforcement plate, a high Young's modulus and stiffness are also achieved, so that the reinforcement plate can be applied to various reinforcement scenarios, such as display backplane, mainboard support, and tablet middle frame reinforcement, to increase its bending resistance.

[0173] When the reinforcement plate of the present application is applied to an electronic device, the electronic device can achieve overall weight reduction and thinning, and has excellent performance.

[0174] The following will be combined Figures 5 to 22 , and a detailed introduction will be given to the reinforcing plate 02 provided by the embodiments of the present application.

[0175] As Figures 5 to 22 shown, the reinforcing plate 02 provided by the embodiments of the present application comprises:

[0176] The base body 1.

[0177] The ceramic stack 2 is located on at least one side surface of the base body 1, the material of the ceramic stack 2 is ceramic material, and the ceramic stack 2 at least comprises a transition layer 21 and a dense ceramic layer 22. The transition layer 21 is located between the base body 1 and the dense ceramic layer 22, and the dense ceramic layer 22 has a plurality of first pores (not shown in the figure) which are discrete and spaced apart. The porosity of the plurality of first pores is less than or equal to 0.5%. Figures 5 to 22

[0178] Among them, the transition layer 21 is not flat, the surface of the transition layer 21 close to the dense ceramic layer 22 is the first surface m1, and the surface of the transition layer 21 close to the base body 1 is the second surface m2. The first surface m1 is connected with and matches the shape of the surface of the dense ceramic layer 22 close to the transition layer 21, and the second surface m2 is connected with and matches the shape of the surface of the base body 1 close to the transition layer 21.

[0179] It should be understood that the ceramic stack is located on at least one side surface of the base body, which means that the ceramic stack can be located on only one side surface of the base body. Specifically, as shown in Figure 5 , Figure 7 and Figure 8 , the ceramic stack 2 is located on the upper surface of the base body 1; or the ceramic stack can be located on multiple side surfaces of the base body. For example, the ceramic stack can be located on two side surfaces of the base body. Specifically, as shown in Figure 9 and Figure 10 , the ceramic stack 2 is located on the upper surface and the lower surface of the base body 1, and as shown in Figure 11 and Figure 12 , the ceramic stack 2 is located on the left surface and the right surface of the base body 1. The specific position can be determined according to actual needs.

[0180] In one or more embodiments, the ceramic material can include at least one of alumina (Al2O3) ceramic, titanium oxide (TiO2) ceramic, zirconium oxide (ZrO2) ceramic, silicon carbide (SiC) ceramic, titanium carbide (TiC) ceramic, and yttrium oxide (Y2O3) ceramic.

[0181] The ceramic material has excellent hardness and Young's modulus, and the density is lower than that of stainless steel.

[0182] As an example, the density of Al2O3 ceramic can be 3.96g / cm 3 ​, hardness can be up to 1551 HV, Young's modulus can be 400 GPa.

[0183] As another example, the density of SiC ceramic can be 3.16 g / cm 3 , hardness can be up to 2347 HV, Young's modulus can be 430 GPa.

[0184] It should be understood that the ceramic stack at least includes a transition layer and a dense ceramic layer means that, as shown in Figure 7 and Figure 9 , the ceramic stack 2 can only include a transition layer 21 and a dense ceramic layer 22; or, as shown in Figure 5 , Figure 8 and Figure 10 , the ceramic stack 2 can include a transition layer 21, a dense ceramic layer 22 and a surface loose layer 23, which can be determined according to actual needs.

[0185] In the application, the porosity of the plurality of first pores in the dense ceramic layer is not specifically limited, and the porosity of the plurality of first pores can be 0.1%, 0.2%, 0.3%, 0.4% or 0.5%, for example. Since the porosity of the dense ceramic layer is small, it can be considered that the dense ceramic layer is a dense structure.

[0186] It should be understood that the transition layer is not flat, which means that the transition layer extends in a non-linear manner. At this time, the non-flatness of the transition layer is not specifically limited, and the transition layer 21 is undulating, as shown in Figure 5 , Figures 7 to 10 Here, the undulating shape can be irregular undulating shape, or it can also be regular undulating shape, which is not specifically limited and can be determined according to actual process.

[0187] It should be understood that the second surface of the transition layer is connected to the substrate and is shape-matched, which means that the second surface can be embedded with the substrate. For example, the second surface is convex, and the surface of the substrate near the second surface is concave; or, the second surface is concave, and the surface of the substrate near the second surface is convex. Thus, the convex and the concave can be completely engaged together, so that the transition layer and the substrate are not easy to be torn and separated under external force.

[0188] In addition, the first surface of the transition layer is connected to the dense ceramic layer and is shape-matched, which means that the first surface can be embedded with the dense ceramic layer. For example, the first surface is convex, and the surface of the dense ceramic layer near the first surface is concave; or, the first surface is concave, and the surface of the dense ceramic layer near the first surface is convex. Thus, the convex and the concave can be completely engaged together, so that the transition layer and the dense ceramic layer are not easy to be torn and separated under external force.

[0189] The reinforcing plate provided by the embodiment of the application has a ceramic layer combined well with the base after the surface layer of the base is vitrified, the ceramic layer at least includes a transition layer and a dense ceramic layer, the transition layer can be embedded with the dense ceramic layer, when the plurality of surfaces of the base have the ceramic layer, a sandwich structure of ceramic layer sandwiching the base can be obtained, the sandwich structure can bear more stress by the hard ceramic layer in the stress process, the deformation degree under the external force is reduced, the rigidity of the base is effectively improved, and the thickness and weight of the reinforcing plate can be reduced under the premise of ensuring the overall Young's modulus and rigidity of the reinforcing plate.

[0190] Therefore, when the reinforcing plate is applied to various reinforcing scenes in electronic devices, the effects of thinning and reducing the weight of the whole machine can be achieved.

[0191] Optionally, as an implementable manner, as shown in Figure 7 and Figure 9 , the ceramic layer 2 includes a transition layer 21 and a dense ceramic layer 22.

[0192] The transition layer 21 is located between the base 1 and the dense ceramic layer 22, the dense ceramic layer 22 has a plurality of discrete and spaced first pores (not shown in Figure 7 and Figure 9 ), the porosity of the plurality of first pores is less than or equal to 0.5%, the transition layer 21 is not flat, a surface of the transition layer 21 close to the dense ceramic layer 22 is a first surface m1, a surface of the transition layer 21 close to the base 1 is a second surface m2, the first surface m1 is connected with and matches the shape of a surface of the dense ceramic layer 22 close to the transition layer 21, and the second surface m2 is connected with and matches the shape of a surface of the base 1 close to the transition layer 21.

[0193] The reinforcing plate provided by the embodiment of the application has a ceramic layer combined well with the base after the surface layer of the base is vitrified, the ceramic layer at least includes a transition layer and a dense ceramic layer, the transition layer can be embedded with the dense ceramic layer, when the plurality of surfaces of the base have the ceramic layer, a sandwich structure of ceramic layer sandwiching the base can be obtained, the sandwich structure can bear more stress by the hard ceramic layer in the stress process, the deformation degree under the external force is reduced, the rigidity of the base is effectively improved, and the thickness and weight of the reinforcing plate can be reduced under the premise of ensuring the overall Young's modulus and rigidity of the reinforcing plate.

[0194] Therefore, when the reinforcing plate is applied to various reinforcing scenes in electronic devices, the effects of thinning and reducing the weight of the whole machine can be achieved.

[0195] Optionally, as an implementable manner, as shown in Figure 5 , Figure 6、 Figure 8 and Figure 10 As shown in FIG. 1 and FIG. 2, the ceramic stack 2 comprises a transition layer 21, a dense ceramic layer 22 and a surface loose layer 23.

[0196] The transition layer 21 is located between the substrate 1 and the dense ceramic layer 22, the dense ceramic layer 22 has a plurality of first pores (not shown in FIG. 1 and FIG. 2) which are discrete and spaced apart, the plurality of first pores has a porosity less than or equal to 0.5%, the transition layer 21 is not flat, a surface of the transition layer 21 close to the dense ceramic layer 22 is a first surface m1, a surface of the transition layer 21 close to the substrate 1 is a second surface m2, the first surface m1 is connected to and matches the shape of a surface of the dense ceramic layer 22 close to the transition layer 21, and the second surface m2 is connected to and matches the shape of a surface of the substrate 1 close to the transition layer 21. Figure 5 、 Figure 8 and Figure 10 The surface loose layer 23 is located on a side of the dense ceramic layer 22 away from the transition layer 21, the surface loose layer 23 is connected to the dense ceramic layer 22, the surface loose layer 23 has a plurality of second pores x which are discrete and spaced apart, and the plurality of second pores x has a porosity in a range of 5% to 15%.

[0197] It is to be noted that, FIG. 3 is a scanning electron microscope (SEM) image of the surface loose layer 23. As can be clearly seen from FIG. 3, the surface loose layer 23 has a plurality of second pores x.

[0198] Figure 6 In applications, the porosity of the second pores of the surface loose layer is not specifically limited, and for example, the porosity of the second pores can be 5%, 6%, 8%, 10%, 13% or 15%, etc. Figure 6 In applications, the shape of the surface loose layer is not specifically limited, and for example, as shown in FIG. 1 and FIG. 2, the surface loose layer 23 can be flat; or, the surface loose layer can be not flat. When the surface loose layer is not flat, the surface loose layer can be in a wavy shape, and further, the wavy shape can be irregular wavy shape, or of course, can be regular wavy shape, which can be determined according to actual process.

[0199] In addition, when the surface loose layer is not flat, the flatness of the surface loose layer can be the same as or different from the flatness of the transition layer, which is not specifically limited here.

[0200] Figure 8 Figure 10

[0201]

[0202] ​​​​In one or more embodiments, when the surface loose layer is not flat, the surface loose layer is connected to and matches the shape of the dense ceramic layer.

[0203] The connection and shape matching refer to that the surface loose layer and the dense ceramic layer can be fitted together. For example, the surface of the surface loose layer near the dense ceramic layer is convex, and the surface of the dense ceramic layer near the surface loose layer is concave. Alternatively, the surface of the surface loose layer near the dense ceramic layer is concave, and the surface of the dense ceramic layer near the surface loose layer is convex. In this way, the convex and the concave can be completely fitted together, so that the surface loose layer and the dense ceramic layer are not easily torn apart under external force.

[0204] In applications, the roughness of the surface loose layer is not specifically limited, and the roughness of the surface loose layer can be 2 μm to 3 μm.

[0205] For example, the roughness of the surface loose layer can be 2 μm, 2.2 μm, 2.4 μm, 2.6 μm, 2.8 μm, or 3 μm, etc.

[0206] It should be noted that, Figure 5 The black part in the figure is an object used when a cross-section slice light microscope of the reinforcing plate is taken, for example, an embedded resin, which can be ignored here.

[0207] The reinforcing plate provided in the embodiments has a ceramic stack well combined with the base after the base surface layer is vitrified. When the base has a plurality of surfaces with the ceramic stack, a sandwich structure of the ceramic stack sandwiching the base is obtained. The surface loose layer, the dense ceramic layer, the transition layer, and the base in the sandwich structure are tightly combined. In the stress process, the ceramic stack can bear more stress, and the deformation degree under external force is reduced, the stiffness of the base is effectively improved, and the thickness of the reinforcing plate is reduced, and the mass is reduced, the weight is lighter than the traditional stainless steel material, and the size is thinner than the traditional pure metal base.

[0208] Therefore, when the reinforcing plate is applied to various reinforcing scenes in electronic devices, the whole machine can be thinned and the weight can be reduced.

[0209] Optionally, as an implementable manner, the base is a light metal base.

[0210] In applications, the light metal of the light metal base is not specifically limited. For example, the light metal can include any one of aluminum (Al), titanium (Ti), and zirconium (Zr).

[0211] In the application, the thickness of the light metal substrate is not specifically limited, and the thickness of the light metal substrate is exemplarily in the range of 0.05mm to 0.6mm.

[0212] Specifically, the thickness of the light metal substrate can be 0.05mm, 0.1mm, 0.2mm, 0.3mm, 0.4mm or 0.6mm, etc.

[0213] In one or more embodiments, the kind of the light metal of the light metal substrate and the kind of the ceramic material of the ceramic layer can be the same or different, and exemplarily, when the light metal is Al, the ceramic material can be at least one of Al2O3 ceramic, TiO2 ceramic, ZrO2 ceramic, SiC ceramic, TiC ceramic and Y2O3 ceramic, etc.

[0214] Further, the kind of the light metal of the light metal substrate and the kind of the ceramic material of the ceramic layer are selected to be the same, and exemplarily, when the light metal is Al, the ceramic material is Al2O3 ceramic.

[0215] The reinforcing plate provided by the embodiments of the application has a ceramic layer combined well with the thin metal substrate after the thin metal surface is ceramized, and when the thin metal substrate has a plurality of surfaces with the ceramic layer, a sandwich structure of ceramic layer sandwiching thin metal can be obtained, at least the dense ceramic layer and the transition layer are combined closely, and the transition layer and the substrate are combined closely, in the process of stress, more stress can be borne by the hard ceramic layer, the deformation degree under external force is reduced, the stiffness of the thin metal substrate is effectively improved, and because the Young's modulus of the ceramic layer is high, the thickness of the reinforcing plate can be reduced and the mass of the reinforcing plate can be reduced under the condition of obtaining the same Young's modulus and stiffness, so that the weight of the reinforcing plate is lighter than that of the traditional stainless steel material, and the size of the reinforcing plate is thinner than that of the pure metal substrate.

[0216] Therefore, when the reinforcing plate is applied to various reinforcing scenes in electronic devices, the effects of thinning and reducing the weight of the whole machine can be achieved.

[0217] The following will be described with reference to Figure 5 , Figure 8 and Figure 10 , taking the reinforcing plate 02 including an Al substrate and an Al2O3 ceramic layer as an example, wherein the thickness of the Al substrate is in the range of 0.05mm to 0.6mm, and the Al2O3 ceramic layer includes a transition layer 21, a dense ceramic layer 22 and a surface loose layer 23.

[0218] In the application, the ratio of the thickness of the Al2O3 ceramic layer to the thickness of the reinforcing plate is not specifically limited, and the ratio of the thickness of the Al2O3 ceramic layer to the thickness of the reinforcing plate is in the range of 10% to 60% along the direction perpendicular to the Al substrate.

[0219] For example, the ratio of the thickness of the Al2O3 ceramic layer to the thickness of the reinforcing plate can be 10%, 20%, 30%, 40%, 50%, or 60%, etc.

[0220] On this basis, the ratio of the thickness of the Al base to the thickness of the reinforcing plate is not specifically limited, and the ratio of the thickness of the Al base to the thickness of the reinforcing plate ranges from 40% to 90%.

[0221] For example, the ratio of the thickness of the Al base to the thickness of the reinforcing plate can be 40%, 50%, 60%, 70%, 80%, or 90%, etc.

[0222] In one or more embodiments, the ratio of the thickness of the transition layer to the thickness of the Al2O3 ceramic layer is not specifically limited, and the ratio of the thickness of the transition layer to the thickness of the Al2O3 ceramic layer ranges from 0.1% to 5% along the direction perpendicular to the Al base.

[0223] For example, the ratio of the thickness of the transition layer to the thickness of the Al2O3 ceramic layer can be 0.1%, 1%, 2%, 1.5%, 3%, 4%, or 5%, etc.

[0224] Further, the thickness of the transition layer is not specifically limited, and for example, the thickness of the transition layer ranges from 0.1 μm to 1 μm along the direction perpendicular to the base.

[0225] Specifically, the thickness of the transition layer can be 0.1 μm, 0.2 μm, 0.4 μm, 0.6 μm, 0.8 μm, or 1 μm, etc.

[0226] In one or more embodiments, the ratio of the thickness of the dense ceramic layer to the thickness of the Al2O3 ceramic layer is not specifically limited, and the ratio of the thickness of the dense ceramic layer to the thickness of the Al2O3 ceramic layer ranges from 90% to 95%.

[0227] For example, the ratio of the thickness of the dense ceramic layer to the thickness of the Al2O3 ceramic layer can be 90%, 91%, 92%, 93%, 94%, or 95%, etc.

[0228] Further, the thickness of the dense ceramic layer is not specifically limited, and for example, the thickness of the dense ceramic layer ranges from 10 μm to 80 μm along the direction perpendicular to the base.

[0229] Specifically, the thickness of the dense ceramic layer can be 10 μm, 20 μm, 30 μm, 40 μm, 60 μm, or 80 μm, etc.

[0230] In one or more embodiments, the ratio of the thickness of the surface loose layer to the thickness of the Al2O3 ceramic layer is not particularly limited, and the ratio of the thickness of the surface loose layer to the thickness of the Al2O3 ceramic layer ranges from 0.1% to 5%.

[0231] For example, the ratio of the thickness of the surface loose layer to the thickness of the Al2O3 ceramic layer can be 0.1%, 0.5%, 1%, 2%, 3%, 4%, or 5%, etc.

[0232] Further, the thickness of the surface loose layer is not particularly limited, and for example, the thickness of the surface loose layer ranges from 0.1 μm to 1 μm in a direction perpendicular to the substrate.

[0233] Specifically, the thickness of the surface loose layer can be 0.1 μm, 0.2 μm, 0.4 μm, 0.6 μm, 0.8 μm, or 1 μm, etc.

[0234] It should be noted that the substrate is actually a three-dimensional structure, and here the substrate is regarded as a two-dimensional structure only for the purpose of describing the thicknesses of the transition layer, the dense ceramic layer, and the surface loose layer.

[0235] In applications, the Vickers hardness of the Al2O3 ceramic layer is not particularly limited, and for example, the Vickers hardness of the Al2O3 ceramic layer is greater than or equal to 1000 HV.

[0236] Specifically, the Vickers hardness of the Al2O3 ceramic layer can be 1000 HV, 1050 HV, 1500 HV, 1900 HV, 2000 HV, or 2500 HV, etc.

[0237] Thus, the Al2O3 ceramic layer wraps the Al substrate thin layer of metal to form a sandwich structure of the reinforcing plate, and the original surface layer of metal Al in the reinforcing plate is replaced by the Al2O3 ceramic layer, and in the process of stress, more stress is borne by the hard Al2O3 ceramic layer.

[0238] Please refer to Figure 11 and Figure 12 for a specific description of the calculation method of the Young's modulus of the Al2O3 ceramic layer reinforced metal Al substrate. Among them, Figure 11 and Figure 12 are cross-sectional views of the reinforcing plate provided by the embodiments of the present application.

[0239] In combination with Figure 11 and Figure 12 , the cross-sectional stress conditions of the Al2O3 ceramic layer reinforced metal Al substrate are divided into two categories:

[0240] a), as shown in Figure 11 , the left and right sandwich stress structure:

[0241] Under the action of three bending forces, the deflection δ of the upper surface of the metal Al matrix and the Al2O3 ceramic stacks on both sides is consistent, as shown by the formula δ=P1L. 3 / 48E1I1=P2L 3 / 48E2I2=PL 3 / 48EI.

[0242] Where P1 is the force experienced by the Al2O3 ceramic stack.

[0243] P2 represents the force acting on the metallic Al matrix.

[0244] P represents the force acting on the entire reinforcing plate.

[0245] E1 is the Young's modulus of the Al2O3 ceramic stack.

[0246] E2 is the Young's modulus of the metallic Al matrix.

[0247] E represents the Young's modulus of the entire reinforcing plate.

[0248] I1 is the moment of inertia of the Al2O3 ceramic stack relative to the neutral plane a.

[0249] I2 is the moment of inertia of the metallic Al matrix relative to the neutral surface a.

[0250] I is the moment of inertia of the entire reinforcing plate relative to the neutral plane a.

[0251] L is the length of the reinforcing plate along the OZ direction, where the OZ direction is perpendicular to... Figure 11 The direction of the mid-section.

[0252] It should be noted that neutral surface 'a' refers to the surface of the material that experiences neither tensile nor compressive forces during stress, and thus remains undeformed. Figure 11 In the middle, the portion of the reinforcing plate above the neutral plane a is subjected to compressive force, and the portion below it is subjected to tensile force. The neutral plane a is... Figure 11 The middle part is indicated by a dashed line.

[0253] Given the composition relationship of the combined forces, P = 2P1 + P2, the Young's modulus in this case can be calculated as follows:

[0254] E = (2b1E1 + b2E2) / (2b1 + b2).

[0255] Where, b1 is the ceramic stack along Figure 11 The width in the OX direction shown, wherein the OX direction is parallel to Figure 11 The direction of the mid-section.

[0256] b2 is the metal Al matrix alongFigure 11 The width in the OX direction is shown.

[0257] b) such as Figure 12 As shown, the upper and lower sandwich-like stress structure:

[0258] Under the action of bending moment, from the perspective of the metal Al matrix and the upper and lower Al2O3 ceramic stacks respectively, the strain ε on both sides of the interface of the metal Al matrix and the upper and lower Al2O3 ceramic stacks is continuous, that is, the strain ε at the interface is consistent, and the relationship is ε=M1y / E1I1=M2y / E2I2=My / EI.

[0259] Where M1 is the bending moment of the Al2O3 ceramic stack.

[0260] M2 is the bending moment of the Al metal matrix.

[0261] M is the bending moment of the entire reinforcing plate.

[0262] E1 is the Young's modulus of the Al2O3 ceramic stack.

[0263] E2 is the Young's modulus of the metallic Al matrix.

[0264] E represents the Young's modulus of the entire reinforcing plate.

[0265] I1 is the moment of inertia of the Al2O3 ceramic stack relative to the neutral plane a.

[0266] I2 is the moment of inertia of the metallic Al matrix relative to the neutral surface a.

[0267] I is the moment of inertia of the entire reinforcing plate relative to the neutral plane a.

[0268] y is the height of the interface between the metal Al matrix and the Al2O3 ceramic stack from the neutral plane a, i.e., y = 1 / 2h2.

[0269] Then, based on the composition relationship of bending moments M = 2M1 + M2 and the parallel axis formula I = (bh 3 ) / 12=I x +∫ A Z 2 dA can be used to calculate the Young's modulus in this case as follows:

[0270] E={2h1[h1 2 +3(h1+h2) 2 E1+h2 3 E2} / (2h1+h2) 3 .

[0271] Where b is the entire reinforcing plate along Figure 12 The width in the OX direction is shown.

[0272] A is the corresponding area element in the parallel axis formula calculation.

[0273] h1 is the height of the Al2O3 ceramic stack along the OY direction shown in the figure. Figure 12

[0274] h2 is the height of the metal Al substrate along the OY direction shown in the figure. Figure 12

[0275] h is the height of the entire reinforcing plate along the OY direction shown in the figure. Figure 12

[0276] According to the above, taking the preparation of an alumina ceramic stack on an Al alloy substrate with a thickness of 0.15mm-0.5mm as an example, the pre-experiment found that when the thickness of the alumina ceramic stack on both sides of the Al alloy substrate accounted for 10%, 20%, and 30% of the total thickness of the reinforcing plate, the Young's modulus of the reinforcing plate of the embodiment of the application was improved by more than 6%, 13%, and 25% respectively compared with pure aluminum alloy.

[0277] As an example, when 10μm of alumina ceramic stack was prepared on both sides of a 0.2mm Al alloy substrate, the Young's modulus of the reinforcing plate was 74.7GPa.

[0278] As another example, when 20μm of alumina ceramic stack was prepared on both sides of a 0.2mm Al alloy substrate, the Young's modulus of the reinforcing plate was 79.4GPa.

[0279] As yet another example, when 30μm of alumina ceramic stack was prepared on both sides of a 0.2mm Al alloy substrate, the Young's modulus of the reinforcing plate was 87.7GPa.

[0280] The above proves that the reinforcing plate provided by the embodiment of the application can have the advantages of lighter quality, excellent stiffness, higher Young's modulus, etc., so that when applied in electronic devices, the electronic devices can have high Young's modulus and excellent stiffness while not being too heavy and thick, and have very excellent performance.

[0281] It should be noted that, Figure 13 shows the surface morphology of a conventional pure aluminum alloy, Figure 14 shows the surface morphology of the reinforcing plate of the embodiment of the application. As shown in Figure 13 and 14 shown, the reinforcing plate of the embodiment of the application has a dull appearance, which is different from the bright surface with metallic luster of the conventional pure aluminum alloy.

[0282] To Figure 14 ​​​By observing the cross-section of the reinforcing plate through potting and embedding, the thickness of the ceramic laminate can be measured to be greater than 10 μm. That is, the ceramic laminate in this embodiment can be made thicker, which is greater than the film thickness obtained by traditional micro-arc oxidation or anodizing, thereby enabling the reinforcing plate to have a higher Young's modulus. However, this thickness is significantly less than the thickness of stainless steel materials in related technologies.

[0283] Furthermore, after corroding the reinforcing plate of the present application embodiment with an etchant, it was found that the reinforcing plate exhibits a laminated form in which ceramic layers and metal substrates are interlocked and interleaved, with the interlocking interface being an irregularly undulating wave shape, and the bonding is good.

[0284] The above only introduces the content related to the inventive point. Other structures can be obtained by referring to relevant technologies, and will not be described in detail here.

[0285] Please refer to the following: Figure 15 and Figure 16 The preparation method of the reinforcing plate 02 provided in the embodiments of this application will be described in detail.

[0286] The manufacturing process of the reinforcing plate in this application embodiment can be briefly described as follows: hot immersion degreasing and washing → neutralization + washing → drilling + washing → powder filling → electric arc sintering → washing and drying → inspection and shipment.

[0287] like Figure 15 As shown, the preparation method includes the following steps:

[0288] S1. As Figure 15 As shown in Figure (a), substrate 1 is provided.

[0289] The substrate is one that has not been affected by drilling and sintering.

[0290] In applications, the matrix material can be a light metal, for example, light metals can include any one of Al, Ti, Zr, etc.

[0291] The shape of the substrate is not specifically limited. For example, the shape of the substrate can be any of the following: cuboid, cube, etc.

[0292] There is no specific limitation on the thickness of the substrate. For example, the thickness of the substrate can range from 0.05 mm to 0.6 mm. Specifically, the thickness of the substrate can be 0.05 mm, 0.1 mm, 0.2 mm, 0.3 mm, 0.4 mm, or 0.6 mm, etc.

[0293] S2. For example Figure 15 As shown in Figure (b), multiple holes k are formed on the upper and lower surfaces of the substrate 1, respectively.

[0294] Among them, the hole k did not penetrate the substrate 1.

[0295] In the application, the pore size of the hole is not specifically limited, and the pore size is exemplarily in the range of 200 nm to 300 nm. Specifically, the pore size can be 200 nm, 220 nm, 240 nm, 260 nm, 280 nm, or 300 nm, etc.

[0296] The depth of the hole (referred to as hole depth) is not specifically limited, and the hole depth is exemplarily in the range of 10 μm to 120 μm. Specifically, the hole depth can be 10 μm, 20 μm, 50 μm, 70 μm, 100 μm, or 120 μm, etc.

[0297] The forming method of the hole is not specifically limited, and the hole can be formed on the surface of the substrate in need of forming the hole by a chemical method, for example, an acid etching method. When the acid etching method is used, the type of the acid is not specifically limited, and the acid can exemplarily include a strong acid, for example, sulfuric acid, phosphoric acid, etc. In this case, the mass concentration of the acid can be 180 g / L.

[0298] It should be noted that when only part of the surface of the substrate needs to form a hole, the surface of the substrate which does not need to form a hole can be protected.

[0299] S3. As shown in FIG. c of the foregoing embodiment, the ceramic material 4 is filled into the hole k to form a first structure. Figure 15

[0300] In the application, the type of the ceramic material is not specifically limited, and the ceramic material can exemplarily include at least one of Al2O3 ceramic, TiO2 ceramic, ZrO2 ceramic, and SiC ceramic, etc.

[0301] The size of the ceramic material is not specifically limited, and the size of the ceramic material can exemplarily be in the nanometer level.

[0302] The method of filling the ceramic material into the hole is not specifically limited, and the nanometer ceramic powder with good electrical conductivity can be deposited in the deep hole, i.e., adsorbed in the hole, under the driving of the electric field force.

[0303] It should be noted that this step is to allow the ceramic material to enter the hole and be adsorbed in the hole, and at this time, the ceramic material does not react.

[0304] S4. As shown in FIG. d of the foregoing embodiment, the first structure is sintered to form a reinforcing plate with a ceramic laminate 2. Figure 15

[0305] In the application, the ceramic laminate 2 is located on the two side surfaces of the substrate 1, and the material of the ceramic laminate 2 is the ceramic material.

[0306] As an example, as shown in FIG. 1 of the foregoing embodiment, a substrate 1 is provided, and the substrate 1 is exemplarily a metal substrate. Figure 9 ​​As shown, the ceramic stack 2 includes a transition layer 21 and a dense ceramic layer 22. The transition layer 21 is located between the substrate 1 and the dense ceramic layer 22. The dense ceramic layer 22 has a plurality of discrete and spaced-apart first pores. Figure 9 (not shown in the figure), the porosity of the plurality of first pores is less than or equal to 0.5%; the transition layer 21 is not straight, the surface of the transition layer 21 near the dense ceramic layer 22 is connected to the dense ceramic layer 22 and the shape matches, and the surface of the transition layer 21 near the substrate 1 is connected to the substrate 1 and the shape matches.

[0307] As another example, such as Figure 10 As shown, the ceramic stack 2 includes a transition layer 21, a dense ceramic layer 22, and a porous surface layer 23. The transition layer 21 is located between the substrate 1 and the dense ceramic layer 22. The dense ceramic layer 22 has a plurality of discrete and spaced-apart first pores. Figure 10 (Not shown in the image), the porosity of the multiple first pores is less than or equal to 0.5%; the transition layer 21 is not straight, the surface of the transition layer 21 near the dense ceramic layer 22 is connected to the dense ceramic layer 22 and matches its shape, the surface of the transition layer 21 near the substrate 1 is connected to the substrate 1 and matches its shape; the surface porous layer 23 is located on the side of the dense ceramic layer 22 away from the transition layer 21, the surface porous layer 23 is connected to the dense ceramic layer 22, and the surface porous layer 23 has multiple discrete and spaced second pores ( Figure 10 (Not shown in the image), the porosity of the multiple second pores ranges from 5% to 15%, and the surface loose layer is flat.

[0308] In application, no specific limitation is made to the sintering method. For example, the sintering method may include arc discharge sintering. When arc discharge sintering is adopted, an alkaline salt solution needs to be prepared as an electrolyte. Then, the first structure is immersed in the electrolyte, and arc discharge sintering is performed after energizing.

[0309] The type and concentration of the salt solution are not specifically limited. For example, the salt solution may include at least one of the following: Na2SiO3 (10g / L) + alkaline KOH (1g / L), Na2B4O7 (10g / L) + alkaline KOH (1g / L), NaAlO2 (10g / L) + alkaline KOH (1g / L).

[0310] There are no specific limitations on the current parameters after power is applied; for example, the current parameter range is 10A / dm. 2 ~30A / dm 2 Specifically, the current parameter can be 10A / dm. 2 15A / dm 2 20A / dm 2 25A / dm 2 28A / dm 2Or 30A / dm 2 Etc.

[0311] Thus, the transition layer between the substrate and the ceramic oxide layer is prepared by the preparation method, the transition layer is the arc reaction product of the electrolyte and the substrate, the interface between the transition layer and the substrate is well combined, and the transition layer is not easy to fall off and crack, and the slice shows irregular undulating corrugation, which can further effectively ensure the interface bonding strength.

[0312] The dense ceramic layer is prepared by the preparation method, the dense ceramic layer is a mixed structure of sintering of ceramic powders in the holes and sintering of the ceramic powders and the hole walls, and is basically close to the previous punching depth. Due to the influence of high-temperature arc sintering, the inner structure is a dense ceramic layer, which is a functional area for improving the main bearing hardness and Young's modulus. The porosity of the dense ceramic layer is extremely low, generally less than or equal to 0.5%, close to a full dense non-porous structure.

[0313] The surface loose layer is prepared by the preparation method, and is a very thin layer on the surface of the dense ceramic layer. Due to the influence of the molten metal, the surface of the surface loose layer has crater pores formed by metal spatter, and has a large brittle tendency and is easy to peel off.

[0314] The preparation method of the reinforcing plate provided in the embodiments of the application prepares a dense ceramic stack on the surface of the sheet metal through a porcelainization process, and forms a sandwich structure by wrapping the intermediate sheet metal with the ceramic stack. Thus, the surface layer metal of the substrate is replaced by the ceramic stack, and more stress is borne by the hard ceramic stack in the stress process, so that the Young's modulus and the stiffness remain unchanged by using the sheet metal and the ceramic stack with a relatively thin thickness compared with the traditional stainless steel material, and the purpose of reducing the weight of the whole machine can be achieved when the reinforcing plate is applied to electronic equipment. In addition, the preparation method is simple and easy to implement, and is conducive to industrial production.

[0315] Please refer to the following Figure 16 , the preparation method of the reinforcing plate in Figure 15 is further described.

[0316] As shown in Figure 16 , the preparation method of the reinforcing plate comprises:

[0317] S11. Providing a cuboid substrate 1.

[0318] S12. Punching phase:

[0319] As shown in Figure 16As shown in FIG. a), a corrosion punching pool 5 containing 180 g / L sulfuric acid is provided, and the cuboid substrate 1 is immersed in the sulfuric acid through the support rod 7. The upper surface and the lower surface of the substrate 1 are corroded by the sulfuric acid, and a plurality of inner surface uneven deep holes are formed on the upper surface and the lower surface, respectively.

[0320] S13. Powder filling stage:

[0321] As shown in FIG. a), a corrosion punching pool 5 containing 180 g / L sulfuric acid is provided, and the cuboid substrate 1 is immersed in the sulfuric acid through the support rod 7. The upper surface and the lower surface of the substrate 1 are corroded by the sulfuric acid, and a plurality of inner surface uneven deep holes are formed on the upper surface and the lower surface, respectively. Figure 16 As shown in FIG. b), a powder sintering pool 8 is provided, which contains 10 g / L Na2SiO3 and 1 g / L KOH. In addition, the powder sintering pool 8 also contains 5 g / L Al2O3 aqueous solution (formed by uniformly dispersing Al2O3 powder in the aqueous solution) with good electrical conductivity. The powder sintering pool 8 also has stirring blades 9, which continuously stir. The powder sintering pool 8 also has an anode power supply 10 and a cathode power supply 11. When powered on, the Al2O3 powder is deposited inside the deep hole under the driving force of the electric field.

[0322] S14. Sintering stage:

[0323] As shown in FIG. a), a corrosion punching pool 5 containing 180 g / L sulfuric acid is provided, and the cuboid substrate 1 is immersed in the sulfuric acid through the support rod 7. The upper surface and the lower surface of the substrate 1 are corroded by the sulfuric acid, and a plurality of inner surface uneven deep holes are formed on the upper surface and the lower surface, respectively. Figure 16 As shown in FIG. b), the current parameter is adjusted to 30 A / dm 2 Under the action of the instantaneous high temperature and high pressure generated by the arc discharge, complex physical and chemical changes occur. The surface layer metal of the un-punched cuboid substrate 1 is oxidized at high temperature and sintered with the filled Al2O3 ceramic powder to form a dense ceramic laminate. The ceramic laminate is firmly combined with the cuboid substrate 1, and has a dense internal structure, high toughness, and good wear resistance and corrosion resistance.

[0324] Thus, various shapes of reinforcing plates can be prepared by the above preparation method, which is convenient for use, for example, Figure 17 and Figure 18 the reinforcing plate 02 shown in FIG. b).

[0325] Compared with the prior art, the preparation method of the reinforcing plate provided in the embodiments of the present application can prepare holes with a larger inner diameter and a deeper hole depth by a chemical method, and then fill the nano ceramic particles with good electrical conductivity into the deep hole under the driving force of the electric field. The effect is better, and the prepared ceramic laminate is thicker and denser. The Vickers hardness of the ceramic laminate after sintering is greater than 1000 HV, and can reach more than 2000 HV, so that the reinforcing plate has higher elastic modulus and better structural stiffness. Thus, the reinforcing plate can be directly used as an internal structural part, and can be subjected to subsequent processing such as surface spraying when used as an appearance part.

[0326] The structure of the reinforcing plate in the embodiments of the present application can be referred to the above embodiments, which will not be described here.

[0327] Here only the content related to the invention point is introduced, and the rest of the preparation method can be obtained by referring to the related technology, which will not be described in detail here.

[0328] The electronic device provided by the embodiment of the present application has the effects of thinning and reducing the weight of the whole machine.

[0329] The electronic device provided by the embodiment of the present application has the effects of thinning and reducing the weight of the whole machine.

[0330] The reinforcing plate provided by the embodiment of the present application is applied to the electronic device, and various applications as shown in Figures 19 to 22 are obtained.

[0331] As an example, as shown in Figure 19 , the electronic device 03 includes a middle frame 101 and reinforcing plates 02, adhesives 12, display screens 100, cover plates 13 and protective layers 14 which are sequentially stacked on the middle frame 101.

[0332] In the application, the type of the adhesive is not specifically limited, and the adhesive may, for example, include an optically clear adhesive (OCA).

[0333] The type of the cover plate is not specifically limited, and the cover plate may, for example, include a glass cover plate and the like to protect the display screen.

[0334] The type of the protective layer is not specifically limited, and the protective layer may, for example, include an anti-fingerprint (AF) layer and the like.

[0335] As another example, as shown in Figure 20 , the electronic device 03 includes a foam 16, a plastic 17, a reinforcing plate 02 and an adhesive 12.

[0336] As yet another example, as shown in Figure 21 , the electronic device 03 includes a backlight module 19, a reinforcing plate 02 and a surface film 20.

[0337] As still another example, as shown in Figure 22 , the electronic device 03 includes a locking lug 22, a reinforcing plate 02, an adhesive 12, a circuit board assembly 103 and a surface film 20.

[0338] It should be noted that Figures 20 to 22 the dashed box in the figure is because the overall structure of the electronic device is not drawn in its entirety, but only a part of the structure related to the invention point is drawn as an example, so the part in the dashed box is a partial structure diagram, and the boundary is indicated by a dashed line.

[0339] It should be understood that the above description is only to help the person skilled in the art better understand the embodiments of the present application, and is not intended to limit the scope of the embodiments of the present application. The person skilled in the art can obviously make various equivalent modifications or changes according to the above examples given. Or the combination of any two or any more embodiments. Such modifications, changes or combinations also fall within the scope of the embodiments of the present application.

[0340] It should also be understood that the above description of the embodiments of the present application focuses on the differences between the various embodiments, and the same or similar parts not mentioned can be referred to each other, and for the sake of brevity, will not be repeated here.

[0341] It should also be understood that the division of the modes, cases, categories and embodiments in the embodiments of the present application is only for the convenience of description, and should not be construed as a special limitation. The features in various modes, categories, cases and embodiments can be combined without contradiction.

[0342] It should also be understood that in various embodiments of the present application, the terms and / or descriptions of different embodiments are consistent and can be referred to each other if there is no special description and logical conflict. The technical features in different embodiments can be combined to form new embodiments according to their inherent logical relationship.

[0343] Finally, it should be noted that the above is only a specific implementation of the present application, but the protection scope of the present application is not limited to this. Any change or replacement within the technical scope disclosed in the present application should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A reinforcing plate characterized by, A reinforcing plate for supporting and reinforcing an electronic device, the reinforcing plate comprising: a substrate; a ceramic stack on at least one side surface of the substrate, the ceramic stack being made of a ceramic material, the ceramic stack comprising at least a transition layer and a dense ceramic layer, the transition layer being between the substrate and the dense ceramic layer, the dense ceramic layer having a plurality of first pores being discrete and spaced apart, the plurality of first pores having a porosity greater than 0 and less than or equal to 0.5%, the transition layer being uneven, the transition layer being corrugated, a surface of the transition layer close to the dense ceramic layer being connected to and matching the shape of the dense ceramic layer, a surface of the transition layer close to the substrate being connected to and matching the shape of the substrate; wherein, when the reinforcing plate has a ceramic stack of alumina of 10 μm on both sides of a 0.2 mm aluminum alloy substrate, the Young's modulus of the reinforcing plate is 74.7 GPa; wherein, when the reinforcing plate has a ceramic stack of alumina of 20 μm on both sides of a 0.2 mm aluminum alloy substrate, the Young's modulus of the reinforcing plate is 79.4 GPa; wherein, when the reinforcing plate has a ceramic stack of alumina of 30 μm on both sides of a 0.2 mm aluminum alloy substrate, the Young's modulus of the reinforcing plate is 87.7 GPa.

2. The reinforcing plate according to claim 1, characterized by the ceramic stack further comprising a surface loose layer on a side of the dense ceramic layer away from the substrate, the surface loose layer being connected to the dense ceramic layer, the surface loose layer having a plurality of second pores being discrete and spaced apart, the plurality of second pores having a porosity in a range of 5% to 15%.

3. The reinforcing plate according to claim 2, characterized in that the surface loose layer being uneven.

4. A reinforcing plate according to any one of claims 1 to 3, characterized in that a ratio of a thickness of the ceramic stack to a thickness of the reinforcing plate is in a range of 10% to 60% along a direction perpendicular to the substrate; a ratio of a thickness of the substrate to a thickness of the reinforcing plate is in a range of 40% to 90%.

5. The reinforcing plate according to claim 4, characterized in that a ratio of a thickness of the transition layer to a thickness of the ceramic stack is in a range of 0.1% to 5% along a direction perpendicular to the substrate; and / or, a ratio of a thickness of the dense ceramic layer to a thickness of the ceramic stack is in a range of 90% to 95%.

6. A reinforcing plate according to claim 2 or 3, characterised in that a ratio of a thickness of the surface loose layer to a thickness of the ceramic stack is in a range of 0.1% to 5% along a direction perpendicular to the substrate; and / or, a roughness of the surface loose layer is in a range of 2 μm to 3 μm.

7. The reinforcing plate according to any one of claims 1 to 3, characterized by a hardness of the ceramic stack is greater than or equal to 1000 HV.

8. The reinforcing plate according to any one of claims 1 to 3, characterized in that, the substrate is a light metal substrate, the light metal substrate having a thickness in a range of 0.05 mm to 0.6 mm.

9. The reinforcing plate according to claim 8, characterized in that a thickness of the dense ceramic layer is in a range of 10 μm to 80 μm along a direction perpendicular to the substrate; and / or, a thickness of the transition layer is in a range of 0.1 μm to 1 μm.

10. The reinforcing plate according to any one of claims 1 to 3, characterized in that, the ceramic material comprises at least one of alumina ceramic, titania ceramic, zirconia ceramic, silicon carbide ceramic, titanium carbide ceramic, and yttria ceramic.

11. The reinforcing plate according to claim 10, characterized by The alumina ceramic has a particle size range of 10 nm to 30 nm, a density range of 3.94 g / cm 3 ~3.98 g / cm 3 a hardness range of 1549 HV to 1553 HV, and a Young's modulus range of 398 GPa to 402 GPa; The silicon carbide ceramic has a particle size range of 10 nm to 30 nm, a density range of 3.14 g / cm 3 3.18 g / cm 3 a hardness range of 2345 HV to 2349 HV, and a Young's modulus range of 428 GPa to 432 GPa.

12. An electronic device, comprising: a reinforcing plate as claimed in any one of claims 1 to 11.

13. A method of manufacturing a reinforcing panel, characterized by, a method for manufacturing a reinforcing plate for supporting and reinforcing an electronic device, the method comprising: providing a substrate; A plurality of holes are formed on at least one side surface of the substrate by using an acid solution corrosion method; wherein the holes do not penetrate the substrate, the hole diameter of the holes ranges from 200 nm to 300 nm, and / or the depth of the holes ranges from 10 μm to 120 μm; The holes are filled with ceramic material to form a first structure; A salt solution in an alkaline environment is prepared as an electrolyte, and then the first structure is immersed in the electrolyte, and after power supply, arc discharge sintering is performed to form a reinforcing plate with a ceramic laminate; wherein the ceramic laminate is located on at least one side surface of the substrate, the material of the ceramic laminate is ceramic material, the ceramic laminate at least includes a transition layer and a dense ceramic layer, the transition layer is located between the substrate and the dense ceramic layer, the dense ceramic layer has a plurality of discrete and spaced first pores, the porosity of the plurality of first pores is greater than 0 and less than or equal to 0.5%; the transition layer is not flat, the transition layer is in a wavy corrugated shape, the surface of the transition layer close to the dense ceramic layer is connected with the dense ceramic layer and matches the shape, the surface of the transition layer close to the substrate is connected with the substrate and matches the shape; wherein when the 0.2 mm aluminum alloy substrate is prepared with 10 μm of alumina ceramic laminate on both sides, the Young's modulus of the reinforcing plate is 74.7 GPa; when the 0.2 mm aluminum alloy substrate is prepared with 20 μm of alumina ceramic laminate on both sides, the Young's modulus of the reinforcing plate is 79.4 GPa; when the 0.2 mm aluminum alloy substrate is prepared with 30 μm of alumina ceramic laminate on both sides, the Young's modulus of the reinforcing plate is 87.7 GPa.

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