A target material sputtering method and device

Abstract

The invention relates to the technical field of target material sputtering, and in particular to a target material sputtering method and equipment thereof. A substrate table is provided in a vacuum chamber, a rotating table is rotatably connected in the vacuum chamber, a laser channel is provided at the side end of the vacuum chamber, and a laser generator is movably connected at the end of the laser channel. According to target materials with different melting points, laser beams of different wavelengths are correspondingly selected to be emitted. The energy of the laser beam bombards the target material to stimulate the target material to be deposited on a substrate material. The laser generator reciprocates along the end of the laser channel to make the laser beam reciprocate and irradiate along the radial direction of the target material, thereby realizing comprehensive sputtering of the target material. The target material utilization rate is very high. The rotating tables are respectively arranged at the upper and lower parts of the vacuum chamber, and are used for depositing toward the front and back sides of the substrate material. The method is not limited by the direction of evaporation and is not affected by the installation method of the evaporation source. A new target material sputtering method is realized, and the effect of reducing equipment cost and technical requirements is achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of target material sputtering, and in particular to a target material sputtering method and equipment thereof. Background Art

[0002] At present, the existing methods for sputtering target materials generally include evaporation, magnetron sputtering, etc. Evaporation is to use a heating source to physically heat the target material, and the target material is heated, melted and deposited on the substrate. However, the quality of the evaporated film is poor, it is difficult to prepare high melting point materials and complex structures, and the evaporation source can generally only be placed at the bottom to evaporate upward, or the evaporation direction can be changed through a pipeline, and the material utilization rate is low. The magnetron sputtering method, such as a magnetron sputtering evaporation dual-system winding vacuum coating machine and its coating process disclosed in Chinese patent document CN111962037B, a method for producing copper indium gallium selenide thin films using copper indium gallium selenide alloy sputtering targets disclosed in CN103219419B, etc., has the problem of high cost and technical requirements. Therefore, there is a lack of a new target sputtering method that can solve the directionality of evaporation, is no longer affected by the installation method of the evaporation source, can reduce equipment costs and technical requirements, and improve target utilization. Summary of the invention

[0003] In view of this, the purpose of the present invention is to propose a target sputtering method and equipment thereof to solve the problems in the existing target sputtering method that are limited by the directionality of evaporation, the installation method of the evaporation source, the equipment cost and the high technical requirements.

[0004] Based on the above purpose, the present invention provides a target sputtering method, comprising the following steps:

[0005] A substrate stage is provided in the vacuum chamber to fix and place the substrate material;

[0006] A rotating table is connected by rotation in the vacuum chamber to fix the target material and drive the target material to rotate axially;

[0007] A laser channel is provided at the side end of the vacuum cavity, and a laser generator is movably connected to the end of the laser channel. The laser beam emitted by the laser generator is irradiated on the target material along the laser channel. According to the target materials with different melting points, laser beams of different wavelengths are selected to be emitted. The energy of the laser beam is used to bombard the target material, and the target material is excited to be deposited on the substrate material.

[0008] The laser generator is reciprocatedly shaken along the end of the laser channel so that the laser beam moves reciprocally along the radial direction of the target material for irradiation.

[0009] Preferably, the rotating tables are respectively arranged at the upper part and the lower part of the vacuum chamber for performing deposition toward the front side and the back side of the substrate material.

[0010] Preferably, multiple groups of laser channels and laser generators are symmetrically arranged along the side ends of the vacuum chamber.

[0011] Preferably, a plurality of irradiation positions are sequentially arranged at the end of the laser channel, and a ring-shaped irradiated area is formed on the target material by reciprocatingly shaking the laser generator in a single irradiation position and continuously rotating the target material axially, and the laser generator is sequentially rotated to each irradiation position to achieve comprehensive sputtering on the target material.

[0012] The present invention also provides a target sputtering device, comprising a vacuum chamber:

[0013] A substrate stage is provided in the vacuum chamber, and a rotating table is rotatably connected in the vacuum chamber;

[0014] A laser channel is provided at the side end of the vacuum cavity, and light-transmitting glass is provided in the laser channel. The light-emitting end of the laser generator is rotatably connected to the end of the laser channel, and the laser beam emitted by the laser generator is irradiated on the target material through the light-transmitting glass.

[0015] Preferably, an arc pipe is fixedly provided at the end of the laser channel, a light-emitting end of the laser generator is connected to a rotating shaft and is rotatably connected to the end of the laser channel through the rotating shaft, a radial rod is connected to the side end of the rotating shaft, one end of the radial rod passes through the arc pipe, and a thin shaft is rotatably connected to the end that passes out of the arc pipe, a turntable is connected to the thin shaft, a side plate is connected to one side of the light-emitting end of the laser generator, the inner side end of the side plate is in contact with the turntable, the turntable is driven to rotate eccentrically through the thin shaft, and the side plate and the light-emitting end of the laser generator are pushed to reciprocate and shake;

[0016] A plurality of telescopic pins are connected to the side end of the arc pipe. When the movable end of the telescopic pin is located in the arc pipe and in an extended state, it is used to abut one end of the radial rod extending into the arc pipe. A single irradiation orientation is formed between the movable ends of adjacent telescopic pins, so that the laser generator can reciprocate in the single irradiation orientation until the movable end of the telescopic pin is retracted, so that the radial rod falls into the adjacent lower irradiation orientation.

[0017] Preferably, the fixed end of the uppermost telescopic pin is fixedly connected to the side end of the arc pipe, and the fixed ends of the remaining telescopic pins are slidably connected to the side ends of the arc pipe. Elastic ropes are connected between the telescopic pins, and the spacing between the telescopic pins is adjusted by pulling the elastic ropes. The movable end of the telescopic pin is fully extended and pressed against the inner wall of the arc pipe to form an irradiation direction with a fixed angle.

[0018] Preferably, a thin groove is formed on the rotating disk along its radial direction, one end of the thin shaft passes through the thin groove, and a locking bolt is connected to the end extending out of the thin groove.

[0019] The beneficial effects of the present invention are as follows: a substrate stage is provided in a vacuum chamber, a rotating table is rotatably connected in the vacuum chamber, a laser channel is provided at the side end of the vacuum chamber, a laser generator is movably connected to the end of the laser channel, laser beams of different wavelengths are selected to be emitted according to target materials with different melting points, the energy of the laser beam bombards the target material, and the target material is stimulated to be deposited on the substrate material, the laser generator reciprocates along the end of the laser channel to make the laser beam reciprocate and irradiate along the radial direction of the target material, and the comprehensive sputtering of the target material is realized, and the utilization rate of the target material is very high. The rotating tables are respectively arranged at the upper and lower parts of the vacuum chamber, and are used for deposition toward the front and back sides of the substrate material, which is not limited by the direction of evaporation and is not affected by the installation method of the evaporation source, thereby realizing a new target sputtering method and achieving the effect of reducing equipment costs and technical requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only for the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1 It is a schematic diagram of the overall structure of the vacuum chamber of the present invention;

[0022] Figure 2 It is a schematic diagram of the structure in which the rotating tables of the present invention are respectively arranged at the upper part and the lower part of the vacuum chamber;

[0023] Figure 3 It is a schematic diagram of the structure of the laser channel and the laser generator of the present invention;

[0024] Figure 4 It is a structural schematic diagram of the laser generator of the present invention when it shakes upward;

[0025] Figure 5 It is a schematic diagram of the structure of the laser generator of the present invention when it falls into the lowest irradiation position;

[0026] Figure 6 It is a structural schematic diagram of the circular arc pipeline of the present invention;

[0027] Figure 7 It is a structural schematic diagram of the telescopic pin rod of the present invention when the movable end thereof is in an extended state;

[0028] Figure 8 It is a schematic structural diagram of the movable end of the telescopic pin rod of the present invention when it is in a retracted state;

[0029] Fig. 9 It is a structural schematic diagram of the turntable of the present invention;

[0030] Fig.10 This is a schematic diagram of the structure in which the laser generator of the present invention is provided with four groups along the side end of the vacuum cavity.

[0031] The markings in the figure are:

[0032] 1. Vacuum chamber; 2. Substrate stage; 3. Substrate material; 4. Rotating table; 5. Target material; 6. Laser channel; 7. Laser generator; 70. Laser beam; 71. Rotating shaft; 710. Arc limit groove; 711. Limit block; 72. Radial rod; 73. Side plate; 8. Translucent glass; 9. Arc pipe; 90. Arc through groove; 10. Thin shaft; 11. Turntable; 12. Telescopic pin rod; 13. Elastic rope; 14. Thin groove; 15. Locking bolt. DETAILED DESCRIPTION

[0033] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments.

[0034] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the present invention should be understood by people with ordinary skills in the field to which the present invention belongs. The "first", "second" and similar words used in the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0035] A target material sputtering method comprises the following steps:

[0036] A substrate stage 2 is provided in the vacuum chamber 1 to fix and place a substrate material 3;

[0037] A rotating table 4 is connected by rotation in the vacuum chamber 1 to fix the target 5 and drive the target 5 to rotate axially;

[0038] A laser channel 6 is provided at the side end of the vacuum chamber 1, and a laser generator 7 is movably connected to the end of the laser channel 6. The laser beam 70 emitted by the laser generator 7 is irradiated on the target material 5 along the laser channel 6. According to the target materials 5 with different melting points, laser beams 70 with different wavelengths are selected to be emitted. For example, a target material 5 with a low melting point uses a laser with a long wavelength, and a target material 5 with a high melting point uses a laser with a short wavelength. The adaptability is wider. The energy of the laser beam 70 is used to bombard the target material 5 to excite the target material 5 to be deposited on the substrate material 3.

[0039] The laser generator 7 is reciprocated and shaken along the end of the laser channel 6, so that the laser beam 70 moves back and forth along the radial direction of the target material 5 to irradiate, and the target material 5 is continuously rotated axially to achieve full sputtering of the target material 5. Specifically, Figure 1 As shown, the top of the vacuum chamber 1 is provided with a motor, a reducer and other driving devices to drive the rotating table 4 to rotate continuously, the vacuum chamber 1 is evacuated by a vacuum pump, the laser melts the target material 5 and then sputters it quickly, the entire target material 5 can be irradiated, and the target material 5 has a high utilization rate. In addition, Figure 2 As shown, the rotating table 4 is respectively arranged at the upper and lower parts of the vacuum chamber 1, and is used for deposition toward the front and back sides of the substrate material 3. Compared with the evaporation method, it is not limited by the direction of evaporation and is not affected by the installation method of the evaporation source, thereby realizing a new target material sputtering method. Compared with magnetron sputtering, it saves a lot of sputtering power supplies and cathodes, greatly reduces the cost, and achieves the effect of reducing equipment cost and technical requirements.

[0040] Among them, multiple targets 5 can be installed at multiple angles on the upper part, which can realize co-sputtering of multiple targets 5 or separate sputtering of different targets 5. The same principle applies to installing them at the lower part of the chamber, which can realize simultaneous sputtering of the front and back sides.

[0041] Preferably, the laser channels 6 and the laser generators 7 are symmetrically arranged in multiple groups along the side ends of the vacuum chamber 1, such as Fig.10 As shown, four groups of laser channels 6 and laser generators 7 are symmetrically arranged along the side ends of the vacuum chamber 1. The laser generators 7 on the left and right sides are used to sputter the target material 5 below, and the laser generators 7 on the front and back sides are used to sputter the target material 5 above, which is beneficial to further improve the sputtering uniformity and thickness controllability.

[0042] More preferably, considering that for a large-sized circular target 5, although the reciprocating vibration of the laser generator 7 can realize comprehensive irradiation of the target 5 in the radial direction, the speed of the reciprocating vibration is fixed, and the variable speed vibration is difficult to control. However, the circumferential diameter of the target 5 at its outer ring is obviously larger than the circumferential diameter of its inner ring. Therefore, the fixed speed vibration of the laser generator 7 will inevitably cause the irradiation time at the outer ring of the target 5 to be equal to the irradiation time at the inner ring of the target 5, which will inevitably cause insufficient irradiation of the outer ring of the target 5 or excessive irradiation of the inner ring, resulting in uneven consumption and waste of the target 5. In this regard, a plurality of irradiation positions are sequentially arranged at the end of the laser channel 6, and the laser generator 7 is used to irradiate the target 5 at a single position. The target material 5 is subjected to a relatively uniform consumption of the annular irradiated area of ​​the target material 5 by reciprocatingly shaking in each irradiation position and continuously rotating the target material 5 axially to form an annular irradiated area on the target material 5. The laser generator 7 is turned to each irradiation position in turn to achieve comprehensive sputtering on the target material 5. Thus, when the laser generator 7 is reciprocally shaken in each irradiation position to form an annular irradiated area on the target material 5, the consumption of the annular irradiated area of ​​the target material 5 is relatively uniform. It is only necessary to control the residence time of the laser generator 7 in different irradiation positions to be different. For example, the residence time of the annular irradiated area of ​​the outer circle on the target material 5 is longer, while the residence time of the annular irradiated area of ​​the inner circle on the target material 5 is shorter, so that the target material 5 can be consumed and irradiated more uniformly.

[0043] The present invention also provides a target sputtering device, such as Figure 1 As shown, it includes a vacuum chamber 1, a substrate stage 2 is provided in the vacuum chamber 1, and a rotating table 4 is rotatably connected in the vacuum chamber 1; a laser channel 6 is provided at the side end of the vacuum chamber 1, and a light-transmitting glass 8 is fixedly provided in the laser channel 6. The light-transmitting glass 8 can specifically be made of quartz glass. The light-emitting end of the laser generator 7 is rotatably connected to the end of the laser channel 6, and the laser beam 70 emitted by the laser generator 7 is irradiated on the target material 5 through the light-transmitting glass 8.

[0044] In an embodiment of the present invention, Figure 1 , Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 , Fig. 9As shown, an arc pipe 9 is fixedly provided at the end of the laser channel 6, a light-emitting end of the laser generator 7 is connected to a rotating shaft 71, and is rotatably connected to the end of the laser channel 6 through the rotating shaft 71, a radial rod 72 is connected to the side end of the rotating shaft 71, one end of the radial rod 72 passes through the arc pipe 9, and a thin shaft 10 is rotatably connected to the end that passes out of the arc pipe 9, and a turntable 11 is connected to the thin shaft 10, and a side plate 73 is connected to one side of the light-emitting end of the laser generator 7, and the inner end of the side plate 73 is in contact with the turntable 11, wherein the arc pipe 9 and the rotating shaft 71 have the same axial direction, and the radial rod 72 is fixedly connected to the turntable 11. At the side end of the shaft 71, one end of the thin shaft 10 is fixedly connected to the eccentric position on the turntable 11, and at the same time, a driving component such as a motor for driving the thin shaft 10 to rotate is provided on the radial rod 72. An arc-shaped limiting groove 710 is provided at the side end of the rotating shaft 71, and a limiting block 711 is fixedly connected to the light-emitting end of the laser generator 7. One end of the limiting block 711 is inserted into the arc-shaped limiting groove 710. The arc-shaped limiting groove 710 is limited to prevent the light-emitting end of the laser generator 7 from rotating to a negative angle with the radial rod 72. The turntable 11 is driven to rotate eccentrically through the thin shaft 10, and the side plate 73 and the light-emitting end of the laser generator 7 are pushed to reciprocate and shake;

[0045] The side end of the arc pipe 9 is connected to a plurality of telescopic pins 12. The telescopic pins 12 can specifically adopt existing conventional structural components similar to electric telescopic rods. When the movable end of the telescopic pin 12 is located in the arc pipe 9 and is in an extended state, it is used to abut against one end of the radial rod 72 extending into the arc pipe 9. A single irradiation position is formed between the movable ends of each adjacent telescopic pin 12, that is, one end of the radial rod 72 that penetrates into the arc pipe 9 is located between the movable ends of adjacent telescopic pins 12, and under the action of its own weight, it abuts against the telescopic pin 12 below in the irradiation position. The upper movable end, for example, when the limit block 711 abuts against the upper end of the arc-shaped limit groove 710, the radial rod 72 is parallel to the light-emitting end of the laser generator 7, and the turntable 11 is driven to rotate eccentrically through the thin shaft 10, pushing the side plate 73 to shake up and down, so that the laser generator 7 shakes back and forth in a single irradiation position until the movable end of the telescopic pin rod 12 of the irradiation position is retracted, so that the radial rod 72 falls into the adjacent lower irradiation position. It only needs to control the retraction time of the movable ends of different telescopic pin rods 12 to be different, so as to achieve uniform consumption of the irradiation target 5.

[0046] In an embodiment of the present invention, Figure 1 , Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 , Fig. 9As shown, the fixed end of the uppermost telescopic pin 12 is fixedly connected to the side end of the arc pipe 9. Because the position of the uppermost telescopic pin 12 represents the most central position of the target material 5, the position is fixed. The fixed ends of the remaining telescopic pins 12 are slidably connected to the side ends of the arc pipe 9. Specifically, an arc-shaped through groove 90 can be opened at the side end of the arc pipe 9 along its arc direction, so that the fixed ends of the remaining telescopic pins 12 can slide along the arc-shaped through groove 90 to adjust the position. Elastic ropes 13 are connected between the telescopic pins 12, so that the spacing between the telescopic pins 12 can be adjusted by pulling the elastic rope 13. And because the elastic rope 13 has consistent elasticity, the spacing between the telescopic pins 12 is guaranteed to remain consistent, and corresponding adjustments can be made for circular targets 5 of different sizes. After adjustment, the radial rod 72 can be manually pushed so that it is located above the uppermost telescopic pin 12. At this time, the movable end of each telescopic pin 12 is controlled to be fully extended and pressed against the inner wall of the arc pipe 9, thereby forming an irradiation orientation with a fixed angle. The laser generator 7 shakes back and forth in a single irradiation orientation, and sequentially controls the movable end of each telescopic pin 12 to retract within a preset time interval, thereby achieving uniform consumption of the irradiated target 5.

[0047] In an embodiment of the present invention, Fig. 9 As shown, the turntable 11 is provided with a thin groove 14 along its radial direction, one end of the thin shaft 10 passes through the thin groove 14, and a locking bolt 15 is connected to the end extending out of the thin groove 14, so as to be used to adjust the amplitude of the vibration of the side plate 73 pushed by the turntable 11.

[0048] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present invention is limited to these examples. Under the concept of the present invention, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the present invention as described above, which are not provided in detail for the sake of simplicity.

Claims

1. A target sputtering device, comprising a vacuum chamber (1), characterized in that: A substrate table (2) is provided in the vacuum chamber (1), and a rotating table (4) is rotatably connected in the vacuum chamber (1) for fixing a target material (5) and driving the target material (5) to rotate axially; A laser channel (6) is provided at the side end of the vacuum chamber (1), a light-transmitting glass (8) is provided in the laser channel (6), a light-emitting end of the laser generator (7) is rotatably connected to the end of the laser channel (6), and a laser beam (70) emitted by the laser generator (7) is irradiated onto the target material (5) through the light-transmitting glass (8); An arc pipe (9) is fixedly provided at the end of the laser channel (6); a light-emitting end of the laser generator (7) is connected to a rotating shaft (71) and is rotatably connected to the end of the laser channel (6) through the rotating shaft (71); a radial rod (72) is connected to the side end of the rotating shaft (71); one end of the radial rod (72) passes through the arc pipe (9), and a thin shaft (10) is rotatably connected to the end that passes through the arc pipe (9); a rotating disk (11) is connected to the thin shaft (10); a side plate (73) is connected to one side of the light-emitting end of the laser generator (7); the inner side end of the side plate (73) is in contact with the rotating disk (11); the rotating disk (11) is driven to rotate eccentrically through the thin shaft (10), and the side plate (73) and the light-emitting end of the laser generator (7) are driven to vibrate back and forth; A plurality of telescopic pins (12) are connected to the side ends of the arc pipe (9); when the movable ends of the telescopic pins (12) are located in the arc pipe (9) and in an extended state, they are used to abut against one end of the radial rod (72) extending into the arc pipe (9); a single irradiation position is formed between the movable ends of adjacent telescopic pins (12), so that the laser generator (7) reciprocates in the single irradiation position until the movable ends of the telescopic pins (12) are retracted, so that the radial rod (72) falls into the adjacent lower irradiation position; The fixed end of the uppermost telescopic pin rod (12) is fixedly connected to the side end of the arc pipe (9), and the fixed ends of the remaining telescopic pin rods (12) are slidably connected to the side ends of the arc pipe (9). An elastic rope (13) is connected between the telescopic pin rods (12). By pulling the elastic rope (13), the spacing between the telescopic pin rods (12) is adjusted. By fully extending the movable end of the telescopic pin rod (12) and pressing against the inner wall of the arc pipe (9), a fixed angle irradiation direction is formed.

2. A target sputtering device according to claim 1, characterized in that: The rotating disk (11) is provided with a thin groove (14) along its radial direction, one end of the thin shaft (10) passes through the thin groove (14), and a locking bolt (15) is connected to the end that passes out of the thin groove (14).

3. A target material sputtering method, the method using the target material sputtering device according to any one of claims 1 to 2 for sputtering, characterized in that: The steps include: A substrate table (2) is provided in the vacuum chamber (1) to fix and place a substrate material (3); A rotating table (4) is connected by rotation in the vacuum chamber (1) to fix the target material (5) and drive the target material (5) to rotate axially; A laser channel (6) is provided at the side end of a vacuum chamber (1), and a laser generator (7) is movably connected to the end of the laser channel (6). A laser beam (70) emitted by the laser generator (7) is irradiated onto a target material (5) along the laser channel (6). Laser beams (70) of different wavelengths are selected and emitted according to target materials (5) with different melting points. The energy of the laser beam (70) is used to bombard the target material (5), thereby exciting the target material (5) to be deposited on a substrate material (3); The laser generator (7) is reciprocated and shaken along the end of the laser channel (6) so that the laser beam (70) moves reciprocally in the radial direction of the target material (5) for irradiation.

4. A target sputtering method according to claim 3, characterized in that: The rotating tables (4) are respectively arranged at the upper and lower parts of the vacuum chamber (1) and are used for performing deposition towards the front and back sides of the substrate material (3).

5. A target sputtering method according to claim 3, characterized in that: The laser channels (6) and the laser generators (7) are symmetrically arranged in multiple groups along the side ends of the vacuum chamber (1).

6. A target sputtering method according to claim 3, characterized in that: The end of the laser channel (6) is provided with a plurality of irradiation positions in sequence, and the laser generator (7) is reciprocated in a single irradiation position, and the target material (5) is continuously axially rotated, so that an annular irradiated area is formed on the target material (5), and the laser generator (7) is rotated to each irradiation position in sequence, so that full sputtering on the target material (5) is achieved.

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