A ZnIn2S4 / amorphous MoO 3-x Preparation and application of nanodot Z system photocatalyst
By preparing ZnIn2S4/amorphous MoO3-x nanodot photocatalysts and combining localized surface plasmon resonance and heterojunction structure, the problems of photoresponse range and electron-hole pair recombination of ZnIn2S4 photocatalysts were solved, and efficient photocatalytic hydrogen production performance and stability were achieved.
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHINA UNIV OF MINING & TECH
- Filing Date
- 2024-10-12
- Publication Date
- 2026-06-09
AI Technical Summary
Existing ZnIn2S4 photocatalysts have limitations in terms of photoresponse range and electron-hole pair recombination, resulting in low photocatalytic hydrogen production efficiency and difficulty in effectively utilizing solar energy.
Amorphous MoO3-x nanodots were synthesized by sonochemical method and loaded onto ZnIn2S4 using a one-pot hydrothermal method to form a ZnIn2S4/amorphous MoO3-x nanodot Z-system photocatalyst. Combining localized surface plasmon resonance effect and heterojunction structure, the light absorption range and electron-hole separation efficiency were improved.
It significantly improves the performance and stability of photocatalytic hydrogen production, expands the light absorption range, and enhances electron-hole separation efficiency, achieving a highly efficient photocatalytic hydrogen production effect.
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Figure CN119259083B_ABST