A thin film deposition device

Abstract

The present invention discloses a thin film deposition device, comprising: a chamber; a pedestal disposed in the chamber for carrying a wafer to be processed; a gas shower head disposed above the pedestal for introducing process gas into the chamber, a process region being formed between the gas shower head and the pedestal; a fixing assembly disposed below the gas shower head, which is configured to be movable up and down so as to move downward and fix the edge of the wafer during the process period; and a translation assembly disposed between the gas shower head and the fixing assembly for moving the fixing assembly in a horizontal plane so that the fixing assembly can align with the edge of the wafer when moving downward. The fixing assembly of the present invention can fix the wafer, reduce the cost of using an electrostatic chuck, and simultaneously suppress the generation of particulate matter on the back surface of the wafer.

Description

Technical Field

[0001] The present invention relates to the field of thin film deposition equipment, and particularly to the field of wafer clamping technology in thin film deposition equipment. Background Art

[0002] Semiconductor equipment is used to fabricate chips. As the process nodes continue to advance downward, semiconductor equipment has become the core for breakthroughs in advanced process chips.

[0003] In the current thin film deposition process of semiconductor advanced processes, with the increase or decrease in the number of thin film deposition layers, the wafer will warp under the action of thin film stress. As the warping worsens, during the next thin film deposition, thin film deposition will also occur on the back edge of the wafer, forming particulate matter. The particulate matter will contaminate the wafer and the chamber, becoming the source of abnormal particulate matter in the next process. To solve this problem, ESC (electrostatic chuck) is currently used in the industry. The wafer is flattened by electrostatic adsorption, so that the wafer does not warp during the process, thus avoiding the abnormal particulate matter generated by the thin film deposition on the back. However, the current ESC (electrostatic chuck) is expensive, has a complex structure, and is monopolized by foreign companies. Summary of the Invention

[0004] In view of this, the purpose of the present invention is to provide a thin film deposition equipment, which can solve the problem of reducing the cost of fixing the wafer, and at the same time is not easy to generate particulate matter.

[0005] To achieve the above purpose, the present invention provides a thin film deposition equipment, including:

[0006] A chamber;

[0007] A base, which is arranged in the chamber and is used to carry the wafer to be processed;

[0008] A gas shower head, which is arranged above the base and is used to introduce process gas into the chamber. A process area is formed between the gas shower head and the base;

[0009] A fixing component, which is arranged below the gas shower head and is configured to be able to move up and down, so as to move down and fix the edge of the wafer during the process period;

[0010] A translation component, which is arranged between the gas shower head and the fixing component and is used to move the fixing component in the horizontal plane, so that the fixing component can align with the edge of the wafer when moving down.

[0011] Optionally, the fixing component includes a base ring and a moving ring. The moving ring is arranged outside the base ring, and the moving ring is configured to move up and down relative to the base ring.

[0012] Optionally, the base is provided with a positioning ring for positioning the wafer. The positioning ring is disposed at the four peripheral edges of the upper surface of the base, and the positioning ring has an inclined surface that slopes from the edge of the base towards the center.

[0013] Optionally, the inner edge of the lower end of the moving ring is a flat surface, and the outer edge of the lower end of the moving ring is a sloped surface. The inclination angle of the sloped surface is the same as the inclination angle of the inclined surface.

[0014] Optionally, the fixing component further includes at least one image acquisition module or wafer position detection module. The image acquisition module or wafer position detection module is disposed on the outer side surface of the moving ring for determining the position of the wafer, so that the translation component drives the fixing component to move on a horizontal plane, thereby aligning the fixing component with the wafer.

[0015] Optionally, there are 3 image acquisition modules or wafer position detection modules, and the intervals between every two of the image acquisition modules or wafer position detection modules are the same.

[0016] Optionally, the translation component includes an upper moving ring and a lower moving ring. The upper moving ring is disposed at the four peripheral edges of the lower surface of the gas spray head, and the lower moving ring is disposed below the upper moving ring.

[0017] Optionally, the upper moving ring is configured to be able to move in a horizontal plane along a first direction, and the lower moving ring is configured to be able to move in a horizontal plane along a second direction. The first direction and the second direction are perpendicular.

[0018] Optionally, the translation component further includes an upper driving part. The upper driving part is disposed inside the gas spray head. The driving rod of the upper driving part is disposed in a groove on the lower surface of the gas spray head, and the upper moving ring is provided with a first lug that cooperates with the driving rod of the upper driving part.

[0019] Optionally, the translation component further includes a lower driving part. The lower driving part is disposed inside the upper moving ring. The driving rod of the lower driving part is disposed in a groove on the lower surface of the upper moving ring, and the lower moving ring is provided with a second lug that cooperates with the driving rod of the lower driving part.

[0020] Optionally, there are two upper driving parts, and the extending directions of the driving rods of the two upper driving parts are the same.

[0021] Optionally, there are two lower driving parts, and the extending directions of the driving rods of the two lower driving parts are the same.

[0022] Optionally, the fixing component further includes an up-and-down driving member. One end of the up-and-down driving member is disposed on the lower surface of the lower moving ring, and the other end is disposed on the upper surface of the moving ring.

[0023] Optionally, there are two up-and-down driving members, and the two up-and-down driving members are symmetric about the center of the moving ring. The up-and-down driving members are cylinders.

[0024] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0025] The fixing component of the present invention can provide a wafer fixing method with lower cost. At the same time, it can prevent the generation of particulate matter on the back of the wafer. Moreover, it can also increase the process pressure of the cavity. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0027] Figure 1 It is a schematic diagram of the thin film deposition equipment of the present invention;

[0028] Figure 2 It is a schematic diagram of the fixing component of the thin film deposition equipment of the present invention moving downward;

[0029] Figure 3 It is a partial schematic diagram of the present invention;

[0030] Figure 4 It is a partial schematic diagram of the present invention;

[0031] Figure 5 It is a top view of the moving ring of the present invention;

[0032] Figure 6 It is a top view of the upper moving ring of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all of them. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0034] Figure 1-2 A schematic diagram of the thin film deposition equipment of the present invention is shown. As Figure 1-2As shown in the figure, the thin film deposition equipment includes: a chamber 110, a pedestal 120, a gas shower head 130, a fixing component 160, a translation component 140, a gas inlet 150, a lifting device 170, and an exhaust port 180. Among them, the pedestal 120 is arranged inside the chamber 110 and is used to carry the wafer to be processed; the gas inlet 150 is arranged above the gas shower head 130 and is connected to it to transport process gas to the gas shower head 130; the gas shower head 130 is arranged above the pedestal, that is, above the chamber 110, and is used to introduce process gas into the chamber 110. A process area is formed between the gas shower head 130 and the pedestal; the lifting device 170 is connected to the pedestal 120 and is used to control the lifting of the pedestal 120; the exhaust port 180 is arranged below the chamber 110 and is used to exhaust the gas after the process from the chamber 110. The fixing component 160 is arranged below the gas shower head 130 and is configured to be able to move up and down, so as to move down and fix the edge of the wafer during the process period; the translation component 140 is arranged between the gas shower head 130 and the fixing component 160 and is used to move the fixing component in the horizontal plane, so that the fixing component can align with the edge of the wafer when moving down.

[0035] Optionally, the translation component 140 is annular and is arranged around the edge of the gas outlet hole of the gas shower head 130.

[0036] As Figure 1-2 shown, the fixing component includes a base ring 161 and a moving ring 162. The moving ring 162 is arranged outside the base ring, and the moving ring is configured to move up and down relative to the base ring. Optionally, the fixing component further includes at least one image acquisition module 163 or wafer position detection module. The image acquisition module 163 or wafer position detection module is arranged on the outer side of the moving ring 162 and is used to determine the position of the wafer, so that the translation component 140 drives the fixing component to move in the horizontal plane, so that the fixing component aligns with the wafer. Optionally, both the base ring 161 and the moving ring 162 are vertically extending rings and are sleeved with each other. Optionally, the wafer position detection module is a laser distance measurement module. Preferably, the image acquisition module 163 is used to determine the position of the wafer.

[0037] Before the process, as Figure 1 shown, the translation component 140 obtains the specific position of the wafer according to the image acquisition module 163, and then moves the translation component 140 to drive the fixing component to move in the horizontal plane, so that the center of the fixing component and the center of the wafer are concentric. When the fixing component aligns with the wafer, the moving ring 162 of the fixing component moves down, so as to press the edge of the wafer, as Figure 2As shown, the fixation of the wafer is achieved. At the same time, the moving ring 162 can prevent the process gas from depositing on the back side of the wafer. Moreover, the base ring 161 and the moving ring 162 form a sealed process area. Therefore, during the process, the gas pressure can be increased, thereby shortening the saturation reaction time. At the same time, the ineffective consumption of the reaction gas can be reduced, and the cost can be lowered.

[0038] Optionally, the base 120 is provided with a positioning ring 121 for positioning the wafer. The positioning ring 121 is disposed on the four peripheral edges of the upper surface of the base 120. The positioning ring has an inclined surface that slopes from the edge of the base towards the center. The inclined surface helps the wafer to be automatically positioned in the base.

[0039] Further preferably, as Figure 2 shown, the inner edge of the lower end of the moving ring 162 is a plane, and the outer edge of the lower end of the moving ring is a slope. The inclination angle of the slope is the same as the inclination angle of the inclined surface. The plane of the inner edge is used to press against the edge of the wafer, and the slope of the outer edge cooperates with the inclined surface of the positioning ring 121 of the base, thereby achieving better sealing, preventing gas from depositing on the back side of the wafer, and further increasing the process pressure at the same time.

[0040] Figure 5 The top view of the moving ring is shown. As shown in Figure 5, optionally, there are 3 image acquisition modules, and the intervals between every two image acquisition modules are the same. In this way, the position of the wafer can be detected more accurately and at the lowest cost.

[0041] Continuing to refer to Figure 2 , the translation assembly includes an upper moving ring 141 and a lower moving ring 142. The upper moving ring 141 is disposed on the four peripheral edges of the lower surface of the gas shower head, and the lower moving ring 142 is disposed below the upper moving ring. The upper moving ring 141 is configured to be able to move in a horizontal plane along a first direction, and the lower moving ring 142 is configured to be able to move in a horizontal plane along a second direction. The first direction and the second direction are perpendicular. Through the above translation assembly, the fixing assembly can move to any position in the horizontal plane, so as to be concentric with the wafer.

[0042] Figure 3 and Figure 4 shows a partial cross-sectional view of the translation assembly, Figure 3 is Figure 4 a cross-sectional view in the cross-cross direction. As Figure 3-4As shown in the figure, the translation component further includes an upper driving part 143, which is arranged inside the gas spray head 130. The driving rod of the upper driving part 143 is arranged in a groove on the lower surface of the gas spray head. The upper moving ring 141 is provided with a first lug 144 that cooperates with the driving rod of the upper driving part 143. Optionally, the first driving part is a motor, the driving rod is a lead screw, and the first lug is provided with a threaded hole that cooperates with the lead screw, so as to drive the lug to move, and finally drive the upper moving ring 141 to move in the first direction.

[0043] The translation component further includes a lower driving part 145, which is arranged inside the upper moving ring 141. The driving rod of the lower driving part is arranged in a groove on the lower surface of the upper moving ring 141. The lower moving ring 142 is provided with a second lug 146 that cooperates with the driving rod of the lower driving part 145. Similarly, the second driving part is a motor, the driving rod is a lead screw, and the second lug is provided with a threaded hole that cooperates with the lead screw, so as to drive the lug to move, and finally drive the lower moving ring 142 to move in the second direction.

[0044] Figure 6 The top view of the upper moving ring 141 is shown. Preferably, as Figure 6 shown, the upper driving part 143 ( Figure 6 not shown) is two. The extending directions of the driving rods of the two upper driving parts are the same, that is, extending along the first direction. The two upper driving parts 143 are arranged at the edge of the gas spray head 130 and are symmetric about the center of the gas spray head 130. The gas outlet holes of the gas spray head 130 are located between the two upper driving parts 143.

[0045] The lower driving part 145 is two. The extending directions of the driving rods of the two lower driving parts are the same, that is, extending along the second direction. The two lower driving parts 145 are symmetric about the center of the upper moving ring 141.

[0046] Optionally, the fixing component further includes an up-and-down driving part 164. One end of the up-and-down driving part is arranged on the lower surface of the lower moving ring 142, and the other end is arranged on the upper surface of the moving ring 162. The base ring 161 is also arranged on the lower surface of the lower moving ring 142. Optionally, the up-and-down driving parts are two. The two up-and-down driving parts are symmetric about the center of the moving ring, and the up-and-down driving parts are cylinders.

[0047] The fixing component of the present invention can provide a wafer fixing method with lower cost. At the same time, it can prevent particles from being generated on the back of the wafer. Moreover, it can also increase the process pressure in the cavity.

[0048] The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A thin film deposition device, characterized in that, Comprising: A cavity; A base disposed within the cavity for carrying a wafer to be processed; A gas showerhead disposed above the base for introducing process gas into the cavity, and a process region is formed between the gas showerhead and the base; A fixing assembly disposed below the gas showerhead, configured to be movable up and down so as to move downward and fix the edge of the wafer during the process period; A translation assembly disposed between the gas showerhead and the fixing assembly for moving the fixing assembly in a horizontal plane so that the fixing assembly can align with the edge of the wafer when moving downward; Wherein, the fixing assembly includes a base ring and a moving ring, the moving ring is disposed outside the base ring, and the moving ring is configured to move up and down relative to the base ring; both the base ring and the moving ring are vertically extending rings; the base ring and the moving ring form a sealed process region.

2. The thin film deposition apparatus according to claim 1, wherein The base is provided with a positioning ring for positioning the wafer, the positioning ring is disposed at the four peripheral edges of the upper surface of the base, and the positioning ring has an inclined surface inclined from the edge of the base towards the center.

3. The thin film deposition apparatus according to claim 2, wherein The inner edge of the lower end of the moving ring is a plane, and the outer edge of the lower end of the moving ring is a sloped surface, and the inclination angle of the sloped surface is the same as the inclination angle of the inclined surface.

4. The thin film deposition device according to claim 1 or 2, characterized in that, The fixing assembly further includes at least one image acquisition module or wafer position detection module, and the image acquisition module or wafer position detection module is disposed on the outer side surface of the moving ring for determining the position of the wafer, so that the translation assembly drives the fixing assembly to move in a horizontal plane, thereby aligning the fixing assembly with the wafer.

5. The thin film deposition apparatus according to claim 4, wherein There are 3 image acquisition modules or wafer position detection modules, and the intervals between every two image acquisition modules or wafer position detection modules are the same.

6. The thin film deposition apparatus according to claim 1, characterized in that, The translation assembly includes an upper moving ring and a lower moving ring, the upper moving ring is disposed at the four peripheral edges of the lower surface of the gas showerhead, and the lower moving ring is disposed below the upper moving ring.

7. The thin film deposition apparatus according to claim 6, wherein The upper moving ring is configured to be movable in a horizontal plane along a first direction, and the lower moving ring is configured to be movable in a horizontal plane along a second direction, and the first direction and the second direction are perpendicular.

8. The thin film deposition device according to claim 7, characterized in that, The translation assembly further includes an upper driving part disposed within the gas showerhead, the driving rod of the upper driving part is disposed in a groove on the lower surface of the gas showerhead, and the upper moving ring is provided with a first lug cooperating with the driving rod of the upper driving part.

9. The thin film deposition apparatus according to claim 7, wherein, The translation assembly further includes a lower driving part disposed within the upper moving ring, the driving rod of the lower driving part is disposed in a groove on the lower surface of the upper moving ring, and the lower moving ring is provided with a second lug cooperating with the driving rod of the lower driving part.

10. The thin film deposition apparatus according to claim 8, wherein, There are two upper driving parts, and the extending directions of the driving rods of the two upper driving parts are the same.

11. The thin film deposition apparatus according to claim 9, wherein, There are two lower driving parts, and the extending directions of the driving rods of the two lower driving parts are the same.

12. The thin film deposition apparatus according to claim 6, wherein, The fixing assembly further includes an up-and-down driving member, one end of which is disposed on the lower surface of the lower moving ring and the other end is disposed on the upper surface of the moving ring.

13. The thin film deposition device according to claim 12, wherein, There are two up-and-down driving members, and the two up-and-down driving members are symmetric about the center of the moving ring. The up-and-down driving members are cylinders.

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