Angle-adjustable multi-station target platform system and ion implanter

Abstract

The present application relates to the technical field of ion implantation, and specifically provides a multi-station target stage system with adjustable angle and an ion implanter, the system comprising: a bracket; a plurality of target plate assemblies, which are arranged in a circular array on the bracket and hinged to the bracket, and are used to install wafers; a plurality of target connecting rods, one end of each target connecting rod being hinged to a target plate assembly; a lifting mechanism, which is installed on the bracket and hinged to the other ends of all target connecting rods, and is used to drive the other ends of all target connecting rods to rise or fall synchronously, so that all target plate assemblies can swing downward or upward synchronously; the system can effectively solve the problem that the inclination angle of the target plate cannot be adjusted according to the preparation requirements of the wafer.

Description

Technical Field

[0001] The present application relates to the technical field of ion implantation, and in particular to an angle-adjustable multi-station target stage system and an ion implantation machine. Background Art

[0002] The related technology can change the physical or chemical properties of the wafer surface by using an ion implanter to implant ions into the wafer. The related technology usually reduces the number of vacuum breaking and vacuum pumping of the ion implanter by setting the target stage of the ion implanter to a multi-target plate structure to improve the implantation efficiency of the ion implanter. The related technology has the problem that the tilt angle of the target plate cannot be adjusted according to the preparation requirements of the wafer.

[0003] There is no effective technical solution to the above problems. It should be noted that the above information disclosed in this section is only used to understand the background of the present invention, and therefore may contain information that does not constitute prior art. Summary of the invention

[0004] The purpose of the present application is to provide an angle-adjustable multi-station target stage system and an ion implanter, which can effectively solve the problem that the tilt angle of the target plate cannot be adjusted according to the preparation requirements of the wafer.

[0005] In a first aspect, the present application provides an angle-adjustable multi-station target stage system, which is applied in an ion implanter. The angle-adjustable multi-station target stage system comprises:

[0006] Bracket;

[0007] A plurality of target plate assemblies are arranged in a circular array on a support and are hinged to the support for mounting wafers;

[0008] A plurality of target connecting rods, one end of each target connecting rod being hinged to a target plate assembly;

[0009] The lifting mechanism is installed on the bracket and is hinged with the other end of all the target connecting rods, and is used to drive the other ends of all the target connecting rods to rise or fall synchronously, so that all the target plate assemblies can swing downward or upward synchronously.

[0010] The present application provides an angle-adjustable multi-station target stage system, which can synchronously adjust the inclination angle of all target plate components through the cooperation of the lifting mechanism and the target connecting rod, that is, the inclination angle of the target plate of the present application is not a fixed value. Therefore, the present application can effectively solve the problem that the inclination angle of the target plate cannot be adjusted according to the preparation requirements of the wafer.

[0011] Optionally, the lifting mechanism includes a vertical slide and a driving mechanism, the vertical slide is slidably mounted on the bracket, the other end of the target link is hinged to the vertical slide, the driving mechanism is mounted on the bracket, and the driving mechanism is used to drive the vertical slide to slide upward or downward on the bracket.

[0012] Optionally, a fixed rod is fixed on the bracket, the vertical sliding member includes a sliding seat and a sliding connecting plate, the driving mechanism includes an adjusting connecting rod, the adjusting connecting rod is hinged to the bracket, one end of the adjusting connecting rod is in contact with the bottom of the sliding seat, the sliding seat is slidably connected to the fixed rod, the sliding connecting plate is fixedly connected to the sliding seat, and the other end of the target connecting rod is hinged to the sliding connecting plate.

[0013] Optionally, the top of the fixed rod has a limit undercut, and the angle-adjustable multi-station target platform system also includes a compression spring, and two ends of the compression spring respectively contact the limit undercut and the top of the sliding seat.

[0014] Optionally, the driving mechanism further comprises a micrometer, which is fixed on the bracket and abuts against the other end of the adjusting connecting rod.

[0015] Optionally, the driving mechanism also includes a motor and a screw pair, the screw pair is connected to the motor and abuts against the other end of the adjusting connecting rod, the motor is used to drive the screw pair to rotate, and the angle-adjustable multi-station target stage system also includes a controller, which is used to obtain a preset tilt angle corresponding to the wafer according to preset process parameters when there is a wafer that has not been ion implanted and before ion implantation is performed on the wafer, and control the motor to drive the screw pair to rotate according to the preset tilt angle and the current tilt angle of the target plate assembly.

[0016] This technical solution is equivalent to providing a target stage system that can adjust the inclination angle of the target disk assembly during the ion implantation process. Therefore, this technical solution can prepare wafers with different degrees of lattice damage in the same batch, thereby effectively avoiding the situation where wafers with different degrees of lattice damage cannot be prepared in the same batch due to the inclination angle of the target disk assembly being unadjustable during the ion implantation process.

[0017] Optionally, each target plate assembly is hinged to two symmetrically arranged target connecting rods.

[0018] Since each target plate assembly of the technical solution is hinged to two symmetrically arranged target connecting rods, the technical solution can make the left and right sides of the target plate assembly evenly stressed, thereby effectively avoiding the situation where the target plate assembly accidentally deflects due to uneven stress on the target plate assembly and ion implantation fails.

[0019] Optionally, the target plate assembly includes a target plate base and a graphite piece, the target plate base is hinged to the bracket, the graphite piece is fixed on the target plate base, the wafer is mounted on the graphite piece, and the coverage area of ​​the wafer is smaller than the coverage area of ​​the graphite piece.

[0020] Since the wafer of this technical solution is installed on the graphite part and the coverage area of ​​the wafer is smaller than the coverage area of ​​the graphite part, this technical solution can effectively avoid the accumulation of current on the target base and the sputtering of metal ions due to ions hitting the target base, thereby effectively avoiding the contamination of the wafer by the sputtered metal atoms.

[0021] Optionally, a cooling channel is provided in the target plate base, and the cooling fluid flows unidirectionally along the cooling channel.

[0022] Since a cooling channel is provided in the target disk base of the technical solution, the cooling fluid flows unidirectionally along the cooling channel, that is, the technical solution is equivalent to using the cooling fluid to cool the wafer. Therefore, the technical solution can effectively avoid the situation where the effect of ion implantation is affected due to the excessively high temperature of the wafer. Moreover, since the thermal conductivity of the graphite part is higher than that of the target disk base, the implemented graphite part can improve the thermal conductivity efficiency, thereby effectively improving the cooling rate of the wafer.

[0023] In a second aspect, the present application further provides an ion implanter, which includes the angle-adjustable multi-station target stage system provided in the first aspect above.

[0024] The present application provides an ion implanter that can synchronously adjust the inclination angles of all target plate components through the cooperation of a lifting mechanism and a target connecting rod, that is, the inclination angle of the target plate of the present application is not a fixed value. Therefore, the present application can effectively solve the problem of being unable to adjust the inclination angle of the target plate according to the wafer preparation requirements.

[0025] From the above, it can be seen that the present application provides an angle-adjustable multi-station target stage system and an ion implanter, which can synchronously adjust the inclination angle of all target plate components through the cooperation of the lifting mechanism and the target connecting rod, that is, the inclination angle of the target plate of the present application is not a fixed value. Therefore, the present application can effectively solve the problem of being unable to adjust the inclination angle of the target plate according to the preparation requirements of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A schematic structural diagram of an angle-adjustable multi-station target stage system provided in an embodiment of the present application.

[0027] Figure 2 A schematic cross-sectional structure diagram of an angle-adjustable multi-station target stage system provided in an embodiment of the present application.

[0028] Figure 3 for Figure 2 Schematic diagram of the enlarged structure at A in FIG.

[0029] Figure 4 This is a schematic cross-sectional structural diagram of the target plate base provided in an embodiment of the present application.

[0030] Figure 5 A schematic structural diagram of the adjusting connecting rod, sliding seat and sliding connecting plate provided in an embodiment of the present application.

[0031] Figure 6 A schematic diagram of the structure of the adjusting connecting rod, motor and screw pair provided in an embodiment of the present application.

[0032] Figure numerals: 1. bracket; 2. target plate assembly; 21. target plate base; 22. graphite part; 3. target connecting rod; 4. lifting mechanism; 41. vertical sliding member; 411. sliding seat; 412. sliding connecting plate; 42. driving mechanism; 421. adjusting connecting rod; 422. micrometer; 423. motor; 424. screw pair; 5. fixing rod; 6. limit undercut; 7. compression spring; 8. angle scale; 9. scale pointer; 10. cooling channel. DETAILED DESCRIPTION

[0033] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

[0034] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0035] First, as Figure 1-Figure 6 As shown, the present application provides an angle-adjustable multi-station target stage system, which is applied in an ion implanter. The angle-adjustable multi-station target stage system includes:

[0036] Bracket 1;

[0037] A plurality of target plate assemblies 2 are arranged in a circular array on the support 1 and are hinged to the support 1 for mounting wafers;

[0038] A plurality of target connecting rods 3, one end of each target connecting rod 3 is hinged to a target plate assembly 2;

[0039] The lifting mechanism 4 is mounted on the bracket 1 and is hinged to the other ends of all the target connecting rods 3, and is used to drive the other ends of all the target connecting rods 3 to rise or fall synchronously, so that all the target plate assemblies 2 can swing downward or upward synchronously.

[0040] The target disk assembly 2 of this embodiment can be an existing target disk. The number of target disk assemblies 2 of this embodiment is multiple, and the number of target disk assemblies 2 of this embodiment is preferably four. Each target disk assembly 2 can mount a wafer. The multiple target disk assemblies 2 of this embodiment are arranged in a circular array on the bracket 1 and are hinged to the bracket 1, that is, the target disk assembly 2 of this embodiment can swing relative to the bracket 1 and the inclination angles of different target disk assemblies 2 (the size of the angle between the target disk assembly 2 and the vertical direction) are the same. The ion implanter of this embodiment can preferably only implant ions into one wafer at the same time, that is, the ion implantation station is preferably one. It should be understood that the ion implanter of this embodiment can also implant ions into multiple wafers at the same time, that is, there can be multiple ion implantation stations. The ion implanter of this embodiment includes a target stage rotating mechanism (not shown in the figure), and the target stage rotating mechanism can drive the target disk assembly 2 to rotate by driving the bracket 1 to rotate, so that the ion implanter can implant ions into wafers mounted on different target disk assemblies 2. The number of target connecting rods 3 in this embodiment is multiple, and one end of each target connecting rod 3 is hinged to a target plate assembly 2. Specifically, each target plate assembly 2 is hinged to at least one target connecting rod 3. The lifting mechanism 4 in this embodiment can be a mechanism such as a cylinder or an electric cylinder that can drive an object to rise and fall. The lifting mechanism 4 in this embodiment is installed on the bracket 1 and is hinged to the other ends of all target connecting rods 3. When the lifting mechanism 4 drives the other end of the target connecting rod 3 to rise, the target connecting rod 3 will drive the target plate assembly 2 to swing downward. When the lifting mechanism 4 drives the other end of the target connecting rod 3 to descend, the target connecting rod 3 will drive the target plate assembly 2 to swing upward. Since the other ends of all target connecting rods 3 are hinged to the lifting mechanism 4, this embodiment is equivalent to synchronously adjusting the inclination angles of all target plate assemblies 2.

[0041] The present application provides an angle-adjustable multi-station target stage system, which can synchronously adjust the inclination angle of all target plate assemblies 2 through the cooperation of the lifting mechanism 4 and the target connecting rod 3, that is, the inclination angle of the target plate of the present application is not a fixed value, so the present application can effectively solve the problem that the inclination angle of the target plate cannot be adjusted according to the preparation requirements of the wafer. It should be understood that since the degree of lattice damage of the wafer is related to the inclination angle of the target plate, and the inclination angle of the target plate assembly 2 of this embodiment is adjustable, this embodiment can prepare wafers with different degrees of lattice damage using a multi-station target stage, so that the prepared wafers can meet the performance requirements of the chip.

[0042] In some preferred embodiments, the lifting mechanism 4 includes a vertical sliding member 41 and a driving mechanism 42, the vertical sliding member 41 is slidably mounted on the bracket 1, the other end of the target link 3 is hinged to the vertical sliding member 41, and the driving mechanism 42 is mounted on the bracket 1, and the driving mechanism 42 is used to drive the vertical sliding member 41 to slide upward or downward on the bracket 1. The vertical sliding member 41 of this embodiment can be a slider slidably connected to a slide rail, and the slide rail is mounted on the bracket 1, and the driving mechanism 42 of this embodiment can be a linear driving mechanism 42.

[0043] In some preferred embodiments, a fixed rod 5 is fixed on the bracket 1, the vertical sliding member 41 includes a sliding seat 411 and a sliding connecting plate 412, the driving mechanism 42 includes an adjusting connecting rod 421, the adjusting connecting rod 421 is hinged to the bracket 1, one end of the adjusting connecting rod 421 is in contact with the bottom of the sliding seat 411, the sliding seat 411 is slidingly connected to the fixed rod 5, the sliding connecting plate 412 is fixedly connected to the sliding seat 411, and the other end of the target connecting rod 3 is hinged to the sliding connecting plate 412.

[0044] In some preferred embodiments, the top of the fixed rod 5 has a limit undercut 6, and the angle-adjustable multi-station target stage system further includes a compression spring 7, and the two ends of the compression spring 7 respectively contact the limit undercut 6 and the top of the sliding seat 411. This embodiment is equivalent to fixing the sliding seat 411 on the fixed rod 5 by using the compression spring 7 and the driving mechanism 42 to avoid the situation where the sliding seat 411 accidentally slides during the process of ion implantation of the wafer.

[0045] In some preferred embodiments, the driving mechanism 42 further includes a micrometer 422, which is fixed on the bracket 1 and contacts the other end of the adjusting link 421. Since the micrometer 422 of this embodiment contacts the other end of the adjusting link 421, and one end of the adjusting link 421 contacts the bottom of the vertical sliding member 41, the micrometer 422 can be extended or retracted by manual adjustment in this embodiment, so that the adjusting link 421 swings upward or downward on the bracket 1, thereby causing the vertical sliding member 41 to slide upward or downward on the bracket 1. It should be understood that since this implementation is equivalent to manually adjusting the tilt angle of the target disk assembly 2, that is, during the ion implantation process, this embodiment cannot adjust the tilt angle of the target disk assembly 2, and therefore this embodiment can only produce wafers with the same degree of lattice damage in the same batch. Before ion implantation, this embodiment can adjust the tilt angle of the target disk assembly 2 by manually adjusting the micrometer 422, and therefore this embodiment can make the tilt angles of the target disk assembly 2 of different batches different, that is, this embodiment can produce wafers with different degrees of lattice damage in different batches.

[0046] In some preferred embodiments, the angle-adjustable multi-station target stage system further includes an angle scale 8 and a scale pointer 9, the scale pointer 9 is fixed on the bracket 1, and the angle scale 8 is fixedly connected to one of the target plate assemblies 2 and is slidably connected to the scale pointer 9. This embodiment is suitable for adjusting the inclination angle of the target plate assembly 2 by extending or retracting the micrometer 422. This embodiment can obtain the current inclination angle of the target plate assembly 2 by reading the reading of the scale pointer 9 on the angle scale 8, and adjust the micrometer 422 based on the current inclination angle of the target plate assembly 2 and the preset inclination angle.

[0047] In some preferred embodiments, the driving mechanism 42 further includes a motor 423 and a screw pair 424, the screw pair 424 is connected to the motor 423 and contacts the other end of the adjusting connecting rod 421, the motor 423 is used to drive the screw pair 424 to rotate, and the angle-adjustable multi-station target stage system further includes a controller, the controller is used to obtain the preset tilt angle corresponding to the wafer according to the preset process parameters before the wafer is ion-implanted and the wafer is ion-implanted, and control the motor 423 to drive the screw pair 424 to rotate according to the preset tilt angle and the current tilt angle of the target disk assembly 2. The ratio of the number of target disk assemblies 2 of this embodiment to the number of ion implantation stations is preferably a positive integer greater than 1, for example, the number of target disk assemblies 2 is twice, three times or four times the number of ion implantation stations. The process parameters of this embodiment are pre-designed parameters by those skilled in the art according to the target wafer parameters (parameters of the wafer to be obtained after ion implantation), the target wafer parameters include the degree of lattice damage, and the process parameters include the preset tilt angle. Since the screw pair 424 of this embodiment is connected to the motor 423 and contacts the other end of the adjusting link 421, this embodiment can drive the screw pair 424 to rotate so that the screw pair 424 moves toward or away from the adjusting link 421, so that the adjusting link 421 swings upward or downward on the bracket 1. Since the inclination angle of the target plate assembly 2 is related to the swing amount of the adjusting link 421, the swing amount of the adjusting link 421 is related to the movement amount of the screw pair 424, and the movement amount of the screw pair 424 is related to the rotation amount of the motor 423, this embodiment can obtain the current inclination angle of the target plate assembly 2 based on the rotation amount of the motor 423. Specifically, the process of ion implantation in this embodiment may be: A1, open the ion implanter, and install wafers on multiple target disk assemblies 2 and place one of the target disk assemblies 2 at the ion implantation station; A2, close the ion implanter and evacuate the ion implanter; A3, obtain the preset tilt angle corresponding to the wafer currently requiring ion implantation according to the preset process parameters; A4, analyze whether the current tilt angle of the target disk assembly 2 is the same as the preset tilt angle, if so, execute step A6, if not, execute step A5; A5, control the motor 423 to drive the screw pair 424 to rotate according to the preset tilt angle and the current tilt angle of the target disk assembly 2, so that the current tilt angle of the target disk assembly 2 is equal to the preset tilt angle; A6, control the ion implanter to implant ions into the wafer; A7, determine whether there are still wafers that have not been implanted with ions, if so, control the target stage rotation mechanism to drive the bracket 1 to rotate, so as to rotate the wafer that has not been implanted with ions to the ion implantation station, and then return to step A3, if not, control the ion implanter to break the vacuum.It should be understood that, since the ion implanter of this embodiment can only implant one wafer at a time, after completing the ion implantation of the wafer, this embodiment needs to rotate the wafer that has not been implanted to the ion implantation station by driving the support 1 to rotate. Therefore, step A7 can determine whether there are still wafers that have not been implanted by determining whether the number of rotations of the support 1 reaches a preset number. For example, the number of target disk assemblies 2 is four. This embodiment can determine whether there are still wafers that have not been implanted by determining whether the number of rotations of the support 1 reaches 3 times. This embodiment is equivalent to providing a target stage system that can adjust the inclination angle of the target disk assembly 2 during the ion implantation process. Therefore, this embodiment can prepare wafers with different degrees of lattice damage in the same batch, thereby effectively avoiding the situation where wafers with different degrees of lattice damage cannot be prepared in the same batch due to the inclination angle of the target disk assembly 2 being unadjustable during the ion implantation process. That is, compared with the embodiment of manually adjusting the micrometer 422, this embodiment can achieve online adjustment of the inclination angle of the target disk assembly 2 during the ion implantation process.

[0048] In some preferred embodiments, each target plate assembly 2 is hinged to two symmetrically arranged target connecting rods 3. Since each target plate assembly 2 of this embodiment is hinged to two symmetrically arranged target connecting rods 3, this embodiment can make the left and right sides of the target plate assembly 2 evenly stressed, thereby effectively avoiding the situation where the target plate assembly 2 is accidentally deflected due to uneven stress on the target plate assembly 2, resulting in ion implantation failure.

[0049] In some preferred embodiments, the target disk assembly 2 includes a target disk base 21 and a graphite member 22, the target disk base 21 is hinged to the bracket 1, the graphite member 22 is fixed on the target disk base 21, the wafer is mounted on the graphite member 22, and the coverage area of ​​the wafer is smaller than the coverage area of ​​the graphite member 22. Since the wafer of this embodiment is mounted on the graphite member 22, and the coverage area of ​​the wafer is smaller than the coverage area of ​​the graphite member 22, this embodiment can effectively avoid the current accumulation of the target disk base 21 due to the ions hitting the target disk base 21, and the metal ions are sputtered, thereby effectively avoiding the contamination of the wafer by the sputtered metal atoms.

[0050] In some preferred embodiments, a cooling channel 10 is provided in the target base 21, and the cooling fluid flows unidirectionally along the cooling channel 10. The cooling fluid of this embodiment can be a cooling liquid or a cooling gas. Since the cooling channel 10 is provided in the target base 21 of this embodiment, and the cooling fluid flows unidirectionally along the cooling channel 10, that is, this embodiment is equivalent to cooling the wafer with the cooling fluid, so this embodiment can effectively avoid the situation where the effect of ion implantation is affected due to the excessive temperature of the wafer, and since the thermal conductivity of the graphite piece 22 is higher than the thermal conductivity of the target base 21, the graphite piece 22 of this embodiment can play a role in improving the thermal conductivity efficiency, thereby effectively improving the cooling rate of the wafer. Preferably, a thermal conductive material (such as heat dissipation silicone grease) is coated between the target base 21 and the graphite piece 22 of this embodiment, and this embodiment can further improve the thermal conductivity efficiency.

[0051] From the above, it can be seen that the present application provides an angle-adjustable multi-station target stage system, which can synchronously adjust the inclination angle of all target plate assemblies 2 through the cooperation of the lifting mechanism 4 and the target connecting rod 3, that is, the inclination angle of the target plate of the present application is not a fixed value. Therefore, the present application can effectively solve the problem that the inclination angle of the target plate cannot be adjusted according to the preparation requirements of the wafer.

[0052] In a second aspect, the present application further provides an ion implanter, which includes the angle-adjustable multi-station target stage system provided in the first aspect above.

[0053] An embodiment of the present application provides an ion implanter, which includes the angle-adjustable multi-station target table system provided by the first aspect above. The principle of the ion implanter of this embodiment is the same as the principle of the angle-adjustable multi-station target table system provided by the first aspect above, and will not be discussed in detail here.

[0054] From the above, it can be seen that the present application provides an angle-adjustable multi-station target stage system and an ion implanter, which can synchronously adjust the inclination angle of all target plate assemblies 2 through the cooperation of the lifting mechanism 4 and the target connecting rod 3, that is, the inclination angle of the target plate of the present application is not a fixed value. Therefore, the present application can effectively solve the problem of being unable to adjust the inclination angle of the target plate according to the preparation requirements of the wafer.

[0055] In the embodiments provided in the present application, it should be understood that, herein, relational terms such as first and second, etc. are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0056] The above description is only an embodiment of the present application and is not intended to limit the protection scope of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An angle-adjustable multi-station target stage system, used in an ion implanter, characterized in that: The angle-adjustable multi-station target platform system comprises: Bracket; A plurality of target disk assemblies, arranged in a circular array on the support and hinged to the support, for mounting wafers; A plurality of target connecting rods, one end of each of the target connecting rods being hinged to one of the target plate assemblies; A lifting mechanism, mounted on the bracket and hinged to the other end of all the target connecting rods, for driving the other ends of all the target connecting rods to rise or fall synchronously, so that all the target plate assemblies can swing downward or upward synchronously; The lifting mechanism includes a vertical sliding member and a driving mechanism, the vertical sliding member is slidably mounted on the bracket, the other end of the target connecting rod is hinged to the vertical sliding member, the driving mechanism is mounted on the bracket, and the driving mechanism is used to drive the vertical sliding member to slide upward or downward on the bracket; A fixing rod is fixed on the bracket, the vertical sliding member includes a sliding seat and a sliding connecting plate, the driving mechanism includes an adjusting connecting rod, the adjusting connecting rod is hinged to the bracket, one end of the adjusting connecting rod conflicts with the bottom of the sliding seat, the sliding seat is slidably connected to the fixing rod, the sliding connecting plate is fixedly connected to the sliding seat, the other end of the target connecting rod is hinged to the sliding connecting plate, the top of the fixing rod has a limit undercut, and the angle-adjustable multi-station target stage system also includes a compression spring, the two ends of the compression spring respectively conflict with the limit undercut and the top of the sliding seat; The driving mechanism also includes a motor and a screw pair, the screw pair is connected to the motor and abuts against the other end of the adjusting connecting rod, the motor is used to drive the screw pair to rotate, and the angle-adjustable multi-station target stage system also includes a controller, the controller is used to obtain a preset tilt angle corresponding to the wafer according to preset process parameters when there is a wafer that has not been ion implanted and before ion implantation is performed on the wafer, and control the motor to drive the screw pair to rotate according to the preset tilt angle and the current tilt angle of the target plate assembly.

2. The angle-adjustable multi-station target stage system according to claim 1, characterized in that: Each of the target disc assemblies is hinged to two symmetrically arranged target connecting rods.

3. The angle-adjustable multi-station target stage system according to claim 1, characterized in that: The target plate assembly comprises a target plate base and a graphite piece, wherein the target plate base is hinged to the bracket, the graphite piece is fixed on the target plate base, the wafer is mounted on the graphite piece, and the coverage area of ​​the wafer is smaller than the coverage area of ​​the graphite piece.

4. The angle-adjustable multi-station target stage system according to claim 3, characterized in that: A cooling channel is provided in the target plate base, and a cooling fluid flows unidirectionally along the cooling channel.

5. An ion implanter, characterized in that: The ion implanter comprises the angle-adjustable multi-station target stage system as described in any one of claims 1-4.

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