A GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer

Abstract

The present invention relates to the field of semiconductor optoelectronic device technology, and specifically discloses a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer. The GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer comprises, from bottom to top, a substrate, an n-type semiconductor, a quantum well, and a p-type semiconductor, and is characterized in that a two-dimensional hole injection layer and an electron blocking layer are provided between the p-type semiconductor and the quantum well. The GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer reduces the hole injection barrier at the interface between the two-dimensional hole injection layer and the quantum well, and increases the electron overflow barrier at the interface between the two-dimensional hole injection layer and the electron blocking layer, thereby improving the efficiency of hole injection into the quantum well and the photoelectric conversion efficiency (WPE) of the semiconductor light-emitting element.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer. Background Art

[0002] Semiconductor components, especially semiconductor light-emitting components, have a wide range of adjustable wavelengths, high luminous efficiency, energy saving and environmental protection, a long service life of more than 100,000 hours, small size, multiple application scenarios, and strong designability. They have gradually replaced incandescent lamps and fluorescent lamps and become the light source for ordinary household lighting. They are also widely used in new scenarios, such as indoor high-resolution display screens, outdoor display screens, Mini-LED, Micro-LED, mobile phone TV backlight, backlight lighting, street lights, car headlights, daytime running lights, interior atmosphere lights, flashlights and other application fields.

[0003] Traditional nitride semiconductors are grown on sapphire substrates, which have large lattice mismatch and thermal mismatch, resulting in high defect density and polarization effect, reducing the luminous efficiency of semiconductor light-emitting elements; at the same time, the hole ionization efficiency of traditional nitride semiconductors is much lower than the electron ionization efficiency, resulting in a hole concentration that is more than one order of magnitude lower than the electron concentration. Excess electrons will overflow from the multi-quantum wells to the second conductive semiconductor to produce non-radiative recombination. The low hole ionization efficiency will make it difficult for the holes of the second conductive semiconductor to be effectively injected into the multi-quantum wells. The low efficiency of hole injection into the multi-quantum wells will lead to multiple The luminescence efficiency of the sub-well is low; the nitride semiconductor structure has non-central symmetry, and will produce strong spontaneous polarization along the c-axis direction, superimposed with the piezoelectric polarization effect of the lattice mismatch to form an intrinsic polarization field; this intrinsic polarization field along the (001) direction causes the multi-quantum well layer to produce a strong quantum-confined Stark effect, causing energy band tilt and spatial separation of electron-hole wave functions, reducing the radiative recombination efficiency of electrons and holes; the refractive index, dielectric constant and other parameters of the semiconductor light-emitting element are greater than those of air, resulting in a small total reflection angle of the light emitted from the quantum well when it is emitted, and a low light extraction efficiency. Summary of the Invention

[0004] The purpose of the present invention is to provide a GaN-based semiconductor light-emitting element with a simple structure and reasonable design and a two-dimensional hole injection layer in order to solve the above problems.

[0005] The present invention achieves the above-mentioned purpose through the following technical solutions:

[0006] A GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer comprises, from bottom to top, a substrate, an n-type semiconductor, a quantum well, and a p-type semiconductor, wherein a two-dimensional hole injection layer and an electron blocking layer are provided between the p-type semiconductor and the quantum well; the peak position of the electron affinity of the two-dimensional hole injection layer decreases at an angle α toward the quantum well, the peak position of the electron affinity of the two-dimensional hole injection layer decreases at an angle β toward the p-type semiconductor, the valley position of the electron affinity of the electron blocking layer increases at an angle γ toward the quantum well, and the valley position of the electron affinity of the electron blocking layer increases at an angle θ toward the p-type semiconductor, wherein: 20°≤γ≤β≤α≤θ≤90°, where the angle is the inclination angle of the tangent along the curve;

[0007] The rising angle of the valley position of the bandgap width of the two-dimensional hole injection layer toward the quantum well is δ, the rising angle of the valley position of the bandgap width of the two-dimensional hole injection layer toward the p-type semiconductor is σ, the descending angle of the peak position of the bandgap width of the electron blocking layer toward the quantum well is φ, and the descending angle of the peak position of the bandgap width of the electron blocking layer toward the p-type semiconductor is ψ, wherein: 10°≤φ≤σ≤δ≤ψ≤90°.

[0008] Furthermore, the rising angle of the valley position of the conduction band effective state density of the two-dimensional hole injection layer toward the quantum well is μ, the rising angle of the valley position of the conduction band effective state density of the two-dimensional hole injection layer toward the p-type semiconductor is υ, the descending angle of the peak position of the conduction band effective state density of the electron blocking layer toward the quantum well is ρ, and the descending angle of the peak position of the conduction band effective state density of the electron blocking layer toward the p-type semiconductor is ω, wherein: 15°≤ρ≤υ≤μ≤ω≤90°.

[0009] Furthermore, the descending angle of the peak position of the breakdown field strength of the two-dimensional hole injection layer toward the quantum well is ε, the descending angle of the peak position of the breakdown field strength of the two-dimensional hole injection layer toward the p-type semiconductor is η, the rising angle of the valley position of the breakdown field strength of the electron blocking layer toward the quantum well is κ, and the rising angle of the valley position of the breakdown field strength of the electron blocking layer toward the p-type semiconductor is ζ, wherein: 17°≤κ≤η≤ε≤ζ≤90°.

[0010] Furthermore, the rising angle of the valley position of the thermal conductivity of the two-dimensional hole injection layer toward the quantum well is χ, the rising angle of the valley position of the thermal conductivity of the two-dimensional hole injection layer toward the p-type semiconductor is ν, the descending angle of the peak position of the thermal conductivity of the electron blocking layer toward the quantum well is π, and the descending angle of the peak position of the thermal conductivity of the electron blocking layer toward the p-type semiconductor is τ, wherein: 13°≤π≤ν≤χ≤τ≤90°.

[0011] Furthermore, the electron affinity and breakdown field strength peak positions of the two-dimensional hole injection layer have a descending angle toward the quantum well, and the band gap width, conduction band effective state density, and thermal conductivity valley position of the two-dimensional hole injection layer have the following relationship toward the quantum well: 10°≤δ≤χ≤μ≤ε≤α≤90°;

[0012] The electron affinity and breakdown field strength peak positions of the two-dimensional hole injection layer decrease at an angle toward the p-type semiconductor, and the band gap width, thermal conductivity, and conduction band effective state density valley position of the two-dimensional hole injection layer increase at an angle toward the p-type semiconductor as follows: 10°≤σ≤ν≤υ≤η≤β≤90°;

[0013] The electron affinity of the electron blocking layer, the rising angle of the valley position of the breakdown field strength toward the quantum well, and the band gap width, conduction band effective state density, and the descending angle of the peak position of the thermal conductivity of the electron blocking layer toward the quantum well have the following relationship: 10°≤φ≤π≤ρ≤κ≤γ≤90°;

[0014] The electron affinity of the electron blocking layer, the rising angle of the valley position of the breakdown field strength toward the p-type semiconductor, and the band gap width, conduction band effective state density, and the descending angle of the peak position of the thermal conductivity of the electron blocking layer toward the p-type semiconductor have the following relationship: 10°≤ψ≤τ≤ω≤ζ≤θ≤90°.

[0015] Furthermore, the electron affinity of the two-dimensional hole injection layer and the peak position of the breakdown field strength decrease in the direction of the quantum well, the band gap width, conduction band effective state density, and the valley position of the thermal conductivity of the two-dimensional hole injection layer increase in the direction of the quantum well, the electron affinity of the two-dimensional hole injection layer and the peak position of the breakdown field strength decrease in the direction of the p-type semiconductor, the band gap width, thermal conductivity, and the valley position of the conduction band effective state density increase in the direction of the p-type semiconductor, the electron affinity of the electron blocking layer and the valley position of the breakdown field strength decrease in the direction of the quantum well, the band gap width, thermal conductivity, and the valley position of the conduction band effective state density ... The rising angle of the peak position of the electron blocking layer toward the quantum well, the descending angle of the band gap width, conduction band effective state density, and thermal conductivity peak position of the electron blocking layer toward the quantum well, the rising angle of the electron affinity and breakdown field strength valley position of the electron blocking layer toward the p-type semiconductor, and the descending angle of the band gap width, conduction band effective state density, and thermal conductivity peak position toward the p-type semiconductor have the following relationship: 10°≤φ≤π≤ρ≤κ≤γ≤σ≤ν≤υ≤η≤β≤δ≤χ≤μ≤ε≤α≤ψ≤τ≤ω≤ζ≤θ≤90°.

[0016] Furthermore, the two-dimensional hole injection layer is any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, and AlN; and the electron blocking layer is any one or any combination of GaN, AlGaN, AlInGaN, AlInN, and AlN.

[0017] Furthermore, the band gap distribution of the two-dimensional hole injection layer has a function y=A*e x -x+B curve distribution; the thermal conductivity distribution of the two-dimensional hole injection layer has a function y=C*e x -x+D curve distribution; the conduction band effective state density distribution of the two-dimensional hole injection layer has a function y=E*e x -x+F curve distribution; the electron affinity energy distribution of the two-dimensional hole injection layer has a third quadrant curve distribution of the function y=G+x+1 / 2x; the breakdown field strength distribution of the two-dimensional hole injection layer has a third quadrant curve distribution of the function y=H+x+1 / 2x; wherein A, B, C, D, E, F, G, H are arbitrary values, and D≤B≤F;

[0018] The band gap distribution of the electron blocking layer has a function y=J*l nx / x+K curve distribution; the thermal conductivity distribution of the two-dimensional hole injection layer has a function y=L*x / e x +M curve distribution; the conduction band effective state density distribution of the two-dimensional hole injection layer has a function y=P*l nx / e x +Q curve distribution; the electron affinity distribution of the two-dimensional hole injection layer has a function y=R*(e x +e -x ) / (e x -e -x )+S first quadrant curve distribution; the breakdown field strength distribution of the two-dimensional hole injection layer has a first quadrant curve distribution of the function y=T+U*x / l nx; wherein J, K, L, M, P, Q, R, S, T, and U are arbitrary values, and M≤K≤Q;.

[0019] Furthermore, the quantum well is a periodic structure composed of a well layer and a barrier layer, and the well layer of the quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the well layer thickness is 5 to 200 angstroms; the barrier layer of the quantum well is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN any one or any combination of N, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a barrier layer thickness of 10 to 400 angstroms;

[0020] The n-type semiconductor and the p-type semiconductor include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the n-type semiconductor is 5 to 60,000 angstroms; the thickness of the p-type semiconductor is 10 to 9,000 angstroms.

[0021] Furthermore, the substrate includes any one of sapphire, diamond, silicon, Ge, SiC, AlN, GaN, GaAs, I nP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / SiO2 / Si Nx composite substrate, sapphire / Si Nx / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / Si Nx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0022] The beneficial effects of the present invention are as follows: the present invention reduces the hole injection barrier at the interface between the two-dimensional hole injection layer and the quantum well and increases the electron overflow barrier at the interface between the two-dimensional hole injection layer and the electron blocking layer by regulating the interface change angle and interface uniformity of the electron affinity and breakdown field strength at the interface between the two-dimensional hole injection layer, the electron blocking layer and the p-type semiconductor and the quantum well. At the same time, the interface change degree and interface uniformity of the conduction band effective state density, band gap width and thermal conductivity at the interface between the two-dimensional hole injection layer, the electron blocking layer and the p-type semiconductor and the quantum well are controlled, thereby enhancing the hole transport efficiency at the interface between the two-dimensional hole injection layer and the quantum well, improving the efficiency of hole injection into the quantum well, and thus improving the photoelectric conversion efficiency (WPE) of the semiconductor light-emitting element. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 Schematic diagram of the structure of a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to an embodiment of the present invention;

[0024] Figure 2 This is a SIMS secondary ion mass spectrum of the structure of a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to an embodiment of the present invention;

[0025] Figure 3 This is a SIMS secondary ion mass spectrum of the structure of a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to an embodiment of the present invention (partially enlarged view);

[0026] Figure 4 This is a transmission electron microscope (TEM) image (p-type region) of a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to an embodiment of the present invention;

[0027] Figure 5 This is a transmission electron microscope (TEM) image (quantum well) of a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to an embodiment of the present invention;

[0028] Figure 6 This is a transmission electron microscope (TEM) image (quantum well) of a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to an embodiment of the present invention;

[0029] Figure 7 This is a transmission electron microscope (TEM) image of a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to an embodiment of the present invention (quantum well).

[0030] In the figure: 100, substrate; 101, n-type semiconductor; 102, quantum well; 102a, first quantum well; 102b, second quantum well; 102c, third quantum well; 103, two-dimensional hole injection layer; 104, electron blocking layer; 105, p-type semiconductor. DETAILED DESCRIPTION

[0031] The present application is described in further detail below in conjunction with the accompanying drawings. It is necessary to point out that the following specific implementation methods are only used to further illustrate the present application and cannot be understood as limiting the scope of protection of the present application. Technicians in this field can make some non-essential improvements and adjustments to the present application based on the above application content.

[0032] like Figure 1-Figure 7 As shown, a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer 103 includes, from bottom to top, a substrate 100, an n-type semiconductor 101, a quantum well 102, and a p-type semiconductor 105, wherein a two-dimensional hole injection layer 103 and an electron blocking layer 104 are provided between the p-type semiconductor 105 and the quantum well; the peak position of the electron affinity of the two-dimensional hole injection layer 103 decreases at an angle α toward the quantum well 102, the peak position of the electron affinity of the two-dimensional hole injection layer 103 decreases at an angle β toward the p-type semiconductor 105, the valley position of the electron affinity of the electron blocking layer 104 increases at an angle γ toward the quantum well 102, and the valley position of the electron affinity of the electron blocking layer 104 increases at an angle θ toward the p-type semiconductor 105, wherein: 20°≤γ≤β≤α≤θ≤90°, where the angle is the inclination angle of the tangent along the curve;

[0033] The quantum well 102 includes a first quantum well 102a, a second quantum well 102b and a third quantum well 102c;

[0034] The rising angle of the valley position of the bandgap width of the two-dimensional hole injection layer 103 toward the quantum well 102 is δ, the rising angle of the valley position of the bandgap width of the two-dimensional hole injection layer 103 toward the p-type semiconductor 105 is σ, the descending angle of the peak position of the bandgap width of the electron blocking layer 104 toward the quantum well 102 is φ, and the descending angle of the peak position of the bandgap width of the electron blocking layer 104 toward the p-type semiconductor 105 is ψ, wherein: 10°≤φ≤σ≤δ≤ψ≤90°.

[0035] Among them, the two-dimensional hole injection layer 103 refers to a thin layer structure specifically designed for effectively injecting and controlling holes (i.e., positive charge carriers); by introducing the two-dimensional hole injection layer 103, the energy loss and carrier non-radiative recombination during the injection process can be effectively reduced, thereby improving the overall efficiency of the device. The optimized hole injection layer helps to achieve higher light output power at a lower driving current and improve the performance indicators of the laser, such as spectral characteristics and stability.

[0036] Electron affinity is the energy released when an atom or molecule acquires an extra electron. Specifically, electron affinity is defined as the energy released when a gaseous atom or molecule absorbs an electron and becomes a negative ion.

[0037] The bandgap refers to the energy gap between the conduction band and the valence band in a semiconductor material, which determines how electrons move in the material and how the material interacts with light.

[0038] In a specific embodiment, the rising angle of the valley position of the conduction band effective state density of the two-dimensional hole injection layer 103 toward the quantum well 102 is μ, the rising angle of the valley position of the conduction band effective state density of the two-dimensional hole injection layer 103 toward the p-type semiconductor 105 is υ, the descending angle of the peak position of the conduction band effective state density of the electron blocking layer 104 toward the quantum well 102 is ρ, and the descending angle of the peak position of the conduction band effective state density of the electron blocking layer 104 toward the p-type semiconductor 105 is ω, wherein: 15°≤ρ≤υ≤μ≤ω≤90°.

[0039] In a specific embodiment, the descending angle of the peak position of the breakdown field strength of the two-dimensional hole injection layer 103 toward the quantum well 102 is ε, the descending angle of the peak position of the breakdown field strength of the two-dimensional hole injection layer 103 toward the p-type semiconductor 105 is η, the rising angle of the valley position of the breakdown field strength of the electron blocking layer 104 toward the quantum well 102 is κ, and the rising angle of the valley position of the breakdown field strength of the electron blocking layer 104 toward the p-type semiconductor 105 is ζ, wherein: 17°≤κ≤η≤ε≤ζ≤90°.

[0040] Breakdown field strength refers to the phenomenon in semiconductors where the material breaks down when the electric field strength reaches a certain value. At this point, the semiconductor's resistance drops sharply, causing the current to increase dramatically. This value is often used to measure the semiconductor material's ability to withstand voltage.

[0041] In a specific embodiment, the rising angle of the valley position of the thermal conductivity of the two-dimensional hole injection layer 103 toward the quantum well 102 is χ, the rising angle of the valley position of the thermal conductivity of the two-dimensional hole injection layer 103 toward the p-type semiconductor 105 is ν, the descending angle of the peak position of the thermal conductivity of the electron blocking layer 104 toward the quantum well 102 is π, and the descending angle of the peak position of the thermal conductivity of the electron blocking layer 104 toward the p-type semiconductor 105 is τ, wherein: 13°≤π≤ν≤χ≤τ≤90°.

[0042] Thermal conductivity refers to the ability of a material to conduct heat. It is usually used to describe the efficiency of semiconductors in the heat conduction process. It refers to the amount of heat conducted per unit area of ​​material under the action of a temperature gradient per unit time.

[0043] In a specific embodiment, the descending angle of the peak position of the electron affinity and breakdown field strength of the two-dimensional hole injection layer 103 toward the quantum well 102, and the rising angle of the valley position of the band gap width, conduction band effective state density, and thermal conductivity of the two-dimensional hole injection layer 103 toward the quantum well 102 have the following relationship: 10°≤δ≤χ≤μ≤ε≤α≤90°;

[0044] The descending angle of the peak position of the electron affinity and breakdown field strength of the two-dimensional hole injection layer 103 toward the p-type semiconductor 105, and the rising angle of the valley position of the band gap width, thermal conductivity, and conduction band effective state density of the two-dimensional hole injection layer 103 toward the p-type semiconductor 105 have the following relationship: 10°≤σ≤ν≤υ≤η≤β≤90°;

[0045] The electron affinity of the electron blocking layer 104 and the rising angle of the valley position of the breakdown field strength toward the quantum well 102, and the band gap width, conduction band effective state density, and the descending angle of the peak position of the thermal conductivity of the electron blocking layer 104 toward the quantum well 102 have the following relationship: 10°≤φ≤π≤ρ≤κ≤γ≤90°;

[0046] The electron affinity of the electron blocking layer 104 and the rising angle of the valley position of the breakdown field strength toward the p-type semiconductor 105, and the band gap width, conduction band effective state density, and the descending angle of the peak position of the thermal conductivity of the electron blocking layer 104 toward the p-type semiconductor 105 have the following relationship: 10°≤ψ≤τ≤ω≤ζ≤θ≤90°.

[0047] In a specific embodiment, the electron affinity of the two-dimensional hole injection layer 103 and the peak position of the breakdown field strength are decreased at an angle toward the quantum well 102, the band gap width, conduction band effective state density, and the valley position of the thermal conductivity of the two-dimensional hole injection layer 103 are increased at an angle toward the quantum well 102, the electron affinity of the two-dimensional hole injection layer 103 and the peak position of the breakdown field strength are decreased at an angle toward the p-type semiconductor 105, the band gap width, thermal conductivity, and the valley position of the conduction band effective state density of the two-dimensional hole injection layer 103 are increased at an angle toward the p-type semiconductor 105, the electron affinity of the electron blocking layer 104 and the breakdown field strength are increased at an angle toward the p-type semiconductor 105, and the electron affinity of the electron blocking layer 104 and the breakdown field strength are increased at an angle toward the quantum well 102. The rising angle of the valley position of the field intensity toward the quantum well 102, the descending angle of the band gap width, conduction band effective state density, and thermal conductivity peak position of the electron blocking layer 104 toward the quantum well 102, the rising angle of the electron affinity and breakdown field intensity valley position of the electron blocking layer 104 toward the p-type semiconductor 105, and the descending angle of the band gap width, conduction band effective state density, and thermal conductivity peak position of the electron blocking layer 104 toward the p-type semiconductor 105 have the following relationship: 10°≤φ≤π≤ρ≤κ≤γ≤σ≤ν≤υ≤η≤β≤δ≤χ≤μ≤ε≤α≤ψ≤τ≤ω≤ζ≤θ≤90°.

[0048] By regulating the interface variation angle and interface uniformity of the electron affinity and breakdown field strength at the interface between the two-dimensional hole injection layer 103, the electron blocking layer 104 and the p-type semiconductor 105 and the quantum well 102, the hole injection barrier at the interface between the two-dimensional hole injection layer 103 and the quantum well 102 is reduced and the electron overflow barrier at the interface between the two-dimensional hole injection layer 103 and the electron blocking layer 104 is increased. At the same time, the interface variation degree and interface uniformity of the conduction band effective state density, band gap width and thermal conductivity at the interface between the two-dimensional hole injection layer 103, the electron blocking layer 104 and the p-type semiconductor 105 and the quantum well 102 are controlled, the hole transport efficiency at the interface between the two-dimensional hole injection layer 103 and the quantum well 102 is enhanced, and the efficiency of hole injection into the quantum well 102 is improved, thereby improving the photoelectric conversion efficiency (WPE) of the semiconductor light-emitting element, and the photoelectric conversion efficiency is increased from 40% to 60% to 60% to 85%.

[0049] In a specific embodiment, the two-dimensional hole injection layer 103 is any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, and AlN; the electron blocking layer 104 is any one or any combination of GaN, AlGaN, AlInGaN, AlInN, and AlN.

[0050] In a specific embodiment, the band gap distribution of the two-dimensional hole injection layer 103 has a function y=A*e x-x+B curve distribution; the thermal conductivity distribution of the two-dimensional hole injection layer 103 has a function y=C*e x -x+D curve distribution; the conduction band effective state density distribution of the two-dimensional hole injection layer 103 has a function y=E*e x -x+F curve distribution; the electron affinity distribution of the two-dimensional hole injection layer 103 has a third quadrant curve distribution of the function y=G+x+1 / 2x; the breakdown field strength distribution of the two-dimensional hole injection layer 103 has a third quadrant curve distribution of the function y=H+x+1 / 2x; wherein A, B, C, D, E, F, G, and H are arbitrary values, and D≤B≤F;

[0051] The band gap distribution of the electron blocking layer 104 has a function y=J*l nx / x+K curve distribution; the thermal conductivity distribution of the two-dimensional hole injection layer 103 has a function y=L*x / e x +M curve distribution; the conduction band effective state density distribution of the two-dimensional hole injection layer 103 has a function y=P*l nx / e x +Q curve distribution; the electron affinity distribution of the two-dimensional hole injection layer 103 has a function y=R*(e x +e -x ) / (e x -e -x )+S first quadrant curve distribution; the breakdown field strength distribution of the two-dimensional hole injection layer 103 has a first quadrant curve distribution of the function y=T+U*x / l nx; wherein J, K, L, M, P, Q, R, S, T, and U are arbitrary values, and M≤K≤Q.

[0052] In a specific embodiment, the quantum well 102 is a periodic structure composed of a well layer and a barrier layer, and the well layer of the quantum well 102 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the well layer thickness is 5 to 200 angstroms; the barrier layer of the quantum well 102 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, Al any one or any combination of N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al GaInP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a barrier layer thickness of 10 to 400 angstroms;

[0053] The n-type semiconductor 101 and the p-type semiconductor 105 include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the n-type semiconductor 101 is 5 to 60,000 angstroms; the thickness of the p-type semiconductor 105 is 10 to 9,000 angstroms.

[0054] In a specific embodiment, the substrate 100 includes any one of sapphire, diamond, silicon, Ge, SiC, Al N, GaN, GaAs, InP, I nAs, GaSb, sapphire / SiO2 composite substrate, sapphire / SiO2 / SiNx composite substrate, sapphire / SiNx / SiO2 composite substrate, sapphire / Al N composite substrate, sapphire / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0055] The above-described embodiments merely illustrate several implementations of the present invention. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art would be able to make numerous variations and improvements without departing from the spirit of the present invention, and all such variations and improvements fall within the scope of protection of the present invention.

Claims

1. A GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer, comprising, from bottom to top, a substrate, an n-type semiconductor, a quantum well, and a p-type semiconductor, characterized in that: A two-dimensional hole injection layer and an electron blocking layer are provided between the p-type semiconductor and the quantum well; the peak position of the electron affinity of the two-dimensional hole injection layer decreases at an angle α toward the quantum well, the peak position of the electron affinity of the two-dimensional hole injection layer decreases at an angle β toward the p-type semiconductor, the valley position of the electron affinity of the electron blocking layer increases at an angle γ toward the quantum well, and the valley position of the electron affinity of the electron blocking layer increases at an angle θ toward the p-type semiconductor, wherein: 20°≤γ≤β≤α≤θ≤90°, where the angle is the inclination angle of the tangent along the curve; The rising angle of the valley position of the bandgap width of the two-dimensional hole injection layer toward the quantum well is δ, the rising angle of the valley position of the bandgap width of the two-dimensional hole injection layer toward the p-type semiconductor is σ, the descending angle of the peak position of the bandgap width of the electron blocking layer toward the quantum well is φ, and the descending angle of the peak position of the bandgap width of the electron blocking layer toward the p-type semiconductor is ψ, wherein: 10°≤φ≤σ≤δ≤ψ≤90°.

2. The GaN-based semiconductor light-emitting element having a two-dimensional hole injection layer according to claim 1, characterized in that: The rising angle of the valley position of the conduction band effective state density of the two-dimensional hole injection layer toward the quantum well is μ, the rising angle of the valley position of the conduction band effective state density of the two-dimensional hole injection layer toward the p-type semiconductor is υ, the descending angle of the peak position of the conduction band effective state density of the electron blocking layer toward the quantum well is ρ, and the descending angle of the peak position of the conduction band effective state density of the electron blocking layer toward the p-type semiconductor is ω, wherein: 15°≤ρ≤υ≤μ≤ω≤90°.

3. The GaN-based semiconductor light-emitting element having a two-dimensional hole injection layer according to claim 2, characterized in that: The descending angle of the peak position of the breakdown field strength of the two-dimensional hole injection layer toward the quantum well is ε, the descending angle of the peak position of the breakdown field strength of the two-dimensional hole injection layer toward the p-type semiconductor is η, the rising angle of the valley position of the breakdown field strength of the electron blocking layer toward the quantum well is κ, and the rising angle of the valley position of the breakdown field strength of the electron blocking layer toward the p-type semiconductor is ζ, wherein: 17°≤κ≤η≤ε≤ζ≤90°.

4. The GaN-based semiconductor light-emitting element having a two-dimensional hole injection layer according to claim 3, characterized in that: The rising angle of the valley position of the thermal conductivity of the two-dimensional hole injection layer toward the quantum well is χ, the rising angle of the valley position of the thermal conductivity of the two-dimensional hole injection layer toward the p-type semiconductor is ν, the descending angle of the peak position of the thermal conductivity of the electron blocking layer toward the quantum well is π, and the descending angle of the peak position of the thermal conductivity of the electron blocking layer toward the p-type semiconductor is τ, wherein: 13°≤π≤ν≤χ≤τ≤90°.

5. The GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to claim 4, characterized in that: The electron affinity and breakdown field strength peak positions of the two-dimensional hole injection layer have a descending angle toward the quantum well, and the band gap width, conduction band effective state density, and thermal conductivity valley position of the two-dimensional hole injection layer have the following relationship toward the quantum well: 10°≤δ≤χ≤μ≤ε≤α≤90°; The electron affinity and breakdown field strength peak positions of the two-dimensional hole injection layer decrease at an angle toward the p-type semiconductor, and the band gap width, thermal conductivity, and conduction band effective state density valley position of the two-dimensional hole injection layer increase at an angle toward the p-type semiconductor as follows: 10°≤σ≤ν≤υ≤η≤β≤90°; The electron affinity of the electron blocking layer, the rising angle of the valley position of the breakdown field strength toward the quantum well, and the band gap width, conduction band effective state density, and the descending angle of the peak position of the thermal conductivity of the electron blocking layer toward the quantum well have the following relationship: 10°≤φ≤π≤ρ≤κ≤γ≤90°; The electron affinity of the electron blocking layer, the rising angle of the valley position of the breakdown field strength toward the p-type semiconductor, and the band gap width, conduction band effective state density, and the descending angle of the peak position of the thermal conductivity of the electron blocking layer toward the p-type semiconductor have the following relationship: 10°≤ψ≤τ≤ω≤ζ≤θ≤90°.

6. The GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to claim 5, characterized in that: The angle at which the peak position of the electron affinity and breakdown field strength of the two-dimensional hole injection layer descends toward the quantum well, the angle at which the band gap width, conduction band effective state density, and thermal conductivity valley position of the two-dimensional hole injection layer rise toward the quantum well, the angle at which the peak position of the electron affinity and breakdown field strength of the two-dimensional hole injection layer descends toward the p-type semiconductor, the angle at which the band gap width, thermal conductivity, and conduction band effective state density valley position of the two-dimensional hole injection layer rise toward the p-type semiconductor, the angle at which the electron affinity and breakdown field strength valley position of the electron blocking layer rise toward the p-type semiconductor The rising angle toward the quantum well, the descending angle of the bandgap width, conduction band effective state density, and thermal conductivity peak position of the electron blocking layer toward the quantum well, the rising angle of the electron affinity and breakdown field valley position of the electron blocking layer toward the p-type semiconductor, and the descending angle of the bandgap width, conduction band effective state density, and thermal conductivity peak position of the electron blocking layer toward the p-type semiconductor have the following relationship: 10°≤φ≤π≤ρ≤κ≤γ≤σ≤ν≤υ≤η≤β≤δ≤χ≤μ≤ε≤α≤ψ≤τ≤ω≤ζ≤θ≤90°.

7. The GaN-based semiconductor light-emitting element having a two-dimensional hole injection layer according to claim 6, characterized in that: The two-dimensional hole injection layer is any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, and AlN; the electron blocking layer is any one or any combination of GaN, AlGaN, AlInGaN, AlInN, and AlN.

8. The GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to claim 7, characterized in that: The band gap distribution of the two-dimensional hole injection layer has a function y=A*e x -x+B curve distribution; the thermal conductivity distribution of the two-dimensional hole injection layer has a function y=C*e x -x+D curve distribution; the conduction band effective state density distribution of the two-dimensional hole injection layer has a function y=E*e x -x+F curve distribution; the electron affinity energy distribution of the two-dimensional hole injection layer has a third quadrant curve distribution of the function y=G+x+1 / 2x; the breakdown field strength distribution of the two-dimensional hole injection layer has a third quadrant curve distribution of the function y=H+x+1 / 2x; wherein A, B, C, D, E, F, G, H are arbitrary values, and D≤B≤F; The band gap width distribution of the electron blocking layer has a function y=J*lnx / x+K curve distribution; the thermal conductivity distribution of the two-dimensional hole injection layer has a function y=L*x / e x +M curve distribution; the conduction band effective state density distribution of the two-dimensional hole injection layer has a function y=P*lnx / e x +Q curve distribution; the electron affinity distribution of the two-dimensional hole injection layer has a function y=R*(e x +e -x ) / (e x -e -x )+S first quadrant curve distribution; the breakdown field strength distribution of the two-dimensional hole injection layer has a first quadrant curve distribution of the function y=T+U*x / lnx; wherein J, K, L, M, P, Q, R, S, T, and U are arbitrary values, and M≤K≤Q.

9. The GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to claim 1, characterized in that: The quantum well is a periodic structure composed of a well layer and a barrier layer. The well layer of the quantum well is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, Al Any one or any combination of InAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the well layer thickness is 5 to 200 angstroms; the barrier layer of the quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the barrier layer thickness is 10 to 400 angstroms; The n-type semiconductor and the p-type semiconductor include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the n-type semiconductor is 5 to 60,000 angstroms; the thickness of the p-type semiconductor is 10 to 9,000 angstroms.

10. The GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to claim 1, characterized in that: The substrate includes any one of sapphire, diamond, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / SiO2 / SiNx composite substrate, sapphire / SiNx / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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