Electro-optical device and electronic apparatus

Abstract

An electro-optical device and an electronic apparatus are provided to suppress generation of surrounding light emission. The electro-optical device includes: reflective electrodes that have reflective properties and are adjacent to each other in an X direction in a plan view; pixel electrodes made of TiN and adjacent to each other in the X direction; an optical adjustment layer; a pixel separation layer that opens at an opening (ApR) with respect to the pixel electrode (131R) and opens at an opening (ApG) with respect to the pixel electrode (131G); a common electrode; and an organic layer disposed between the common electrode and the pixel electrode. In a plan view, an end portion (P1) of the opening portion (ApR), an end portion (P2) of the reflective electrode (62R), and an end portion (P3) of the pixel electrode (131R) are arranged in this order along the X direction, and an end portion (P4) of the opening portion (ApG), an end portion (P5) of the reflective electrode (62G), and an end portion (P6) of the pixel electrode (131G) are arranged in this order along a direction opposite to the X direction.

Description

Technical Field

[0001] The present invention relates to an electro-optical device and an electronic device. Background Art

[0002] In electro-optical devices using, for example, OLEDs as light-emitting elements, the following technology is known: a white light-emitting element is used to achieve color display, and light of specific wavelengths is enhanced and extracted through an optical resonance structure in pixel portions corresponding to red, green, and blue (see, for example, Patent Document 1).

[0003] Patent Document 1: Japanese Patent Application Publication No. 2022-100348

[0004] However, the technology described in Patent Document 1 has a problem in which the pixel electrode emits light around the region in contact with the light-emitting layer with respect to the opening of the insulating layer, that is, peripheral light emission is seen. Summary of the invention

[0005] An electro-optical device according to one embodiment of the present disclosure comprises: a first reflective layer and a second reflective layer having a light-reflecting property and adjacent to each other along a first direction when viewed from above; a first pixel electrode and a second pixel electrode made of metal nitride and adjacent to each other along the first direction when viewed from above; a first optical adjustment layer having an insulating property and a light-transmitting property and disposed between the first reflective layer and the first pixel electrode; a second optical adjustment layer having an insulating property and a light-transmitting property and disposed between the second reflective layer and the second pixel electrode; an insulating layer having an opening in a first opening relative to the first pixel electrode when viewed from above and an opening in a second opening relative to the second pixel electrode when viewed from above; a common electrode; and an organic layer including a light-emitting layer, disposed between the common electrode and the insulating layer, the first pixel electrode, or the second pixel electrode, wherein, in a top view, an end portion of the first opening adjacent to the second opening is adjacent to the end portion of the second opening. The end portion adjacent to the second opening is the first end, the end portion of the first reflecting layer that is adjacent to the second reflecting layer is the second end, the end portion of the first pixel electrode that is adjacent to the second pixel electrode is the third end, the end portion of the second opening that is adjacent to the first opening is the fourth end, the end portion of the second reflecting layer that is adjacent to the first reflecting layer is the fifth end, and the end portion of the second pixel electrode that is adjacent to the first pixel electrode is the sixth end. The first end, the second end, and the third end are arranged in the order of the first end, the second end, and the third end along the first direction from the first opening toward the second opening, and the fourth end, the fifth end, and the sixth end are arranged in the order of the fourth end, the fifth end, and the sixth end along the first direction from the second opening toward the first opening. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 It is a diagram showing the structure of an electro-optical device according to an embodiment.

[0007] Figure 2 It is a block diagram showing the electrical structure of an electro-optical device.

[0008] Figure 3 This is a circuit diagram showing a pixel portion in an electro-optical device.

[0009] Figure 4 This is a timing chart showing the operation of the electro-optical device.

[0010] Figure 5 It is a plan view showing a pixel portion in the electro-optical device.

[0011] Figure 6 This is a cross-sectional view showing the main parts of a reflective layer and a pixel electrode in the electro-optical device.

[0012] Figure 7 This is a cross-sectional view of the main parts showing a reflective layer and a pixel electrode in the electro-optical device.

[0013] Figure 8 This is a cross-sectional view of the main parts showing a reflective layer and a pixel electrode in the electro-optical device.

[0014] Fig. 9 It is a cross-sectional view showing the main parts of the reflective layer and the pixel electrode in the first comparative example.

[0015] Fig.10 This is a cross-sectional view of the main parts of the pixel unit.

[0016] Fig.11 This is a cross-sectional view of the main parts of the pixel unit.

[0017] Fig.12 It is a cross-sectional view of a main part of a pixel portion of the second comparative example.

[0018] Fig.13 It is a cross-sectional view of a main part of a pixel portion of the third comparative example.

[0019] Fig.14 It is a diagram showing a comparison between the embodiment and a third comparative example.

[0020] Fig.15 It is a diagram showing a comparison between the embodiment and a third comparative example.

[0021] Fig.16 This is a perspective view showing a head mounted display using an electro-optical device.

[0022] Fig.17 A diagram showing the optical structure of a head mounted display.

[0023] Description of symbols

[0024] 10: electro-optical device; 12: scanning line; 14: data line; 100: display area; 62B: reflective electrode (first reflective layer, third reflective layer); 62G: reflective electrode (second reflective layer); 110: pixel portion; 121, 122: transistors; 130: OLED; 131R: pixel electrode (first pixel electrode, third pixel electrode); 131G: pixel electrode (second pixel electrode); 132: organic layer; 1321: hole injection layer; 133: common electrode. DETAILED DESCRIPTION

[0025] Hereinafter, the electro-optical device of the embodiment of the present invention will be described with reference to the accompanying drawings. In addition, in each figure, the size and scale of each part are appropriately different from the actual size and scale. In addition, the embodiment described below is a preferred specific example, so various preferred limitations are added technically, but the scope of the present invention is not limited to these modes as long as there is no record of the main purpose of the present invention that is particularly limited in the following description.

[0026] Figure 1 is a perspective view showing an electro-optical device 10 according to an embodiment. Figure 2 2 is a block diagram showing the electrical structure of the electro-optical device 10 .

[0027] The electro-optical device 10 is, for example, a micro display panel that displays a color image in a head-mounted display or the like. The electro-optical device 10 includes a plurality of pixel units, a driving circuit that drives the pixel units, and the like. The pixel units and the driving circuit are integrated on a semiconductor substrate. The semiconductor substrate is typically a silicon substrate, but may also be other semiconductor substrates.

[0028] The electro-optical device 10 is housed in a frame-shaped housing 192 opened in the display area 100. One end of an FPC substrate 194 is connected to the electro-optical device 10. FPC is an abbreviation for Flexible Printed Circuits. A plurality of terminals 196 for connecting to a host device (not shown) are provided at the other end of the FPC substrate 194. When the plurality of terminals 196 are connected to the host device, image data, synchronization signals, etc. are provided from the host device to the electro-optical device 10 via the FPC substrate 194.

[0029] In addition, in the figure, the X direction is the extension direction of the scanning line in the electro-optical device 10, which indicates the horizontal direction in terms of the display screen, and the Y direction is the extension direction of the data line, which indicates the vertical direction in terms of the display screen. The two-dimensional plane determined by the X direction and the Y direction is the substrate surface of the semiconductor substrate. The Z direction is perpendicular to the X direction and the Y direction, and is the emission direction of the light emitted from the light-emitting element. In addition, in this description, a top view refers to observing the semiconductor substrate from the opposite direction of the Z direction, and a cross-sectional view refers to observing the semiconductor substrate by cutting it in a direction perpendicular to the substrate surface.

[0030] like Figure 2 As shown, the electro-optical device 10 is roughly divided into a control circuit 30 , a data signal output circuit 50 , a display area 100 , and a scan line driving circuit 120 .

[0031] In the display area 100, m rows of scanning lines 12 are arranged along the X direction, and (3n) columns of data lines 14 are arranged along the Y direction and electrically insulated from the scanning lines 12. Note that m and n are integers of 2 or more.

[0032] In the display area 100, the pixel portion 110 is provided corresponding to the intersection of the scan line 12 of the m rows and the data line 14 of the (3n) columns. Therefore, the pixel portion 110 is arranged in a matrix of m rows and (3n) columns. In the arrangement of the matrix, in order to distinguish the rows, sometimes the 1st, 2nd, 3rd, ..., (m-1), and mth rows are referred to from top to bottom in the figure. Similarly, in order to distinguish the columns of the matrix, sometimes the 1st, 2nd, 3rd, ..., (3n-2), (3n-1), and (3n)th columns are referred to from left to right in the figure.

[0033] In order to describe the scanning line 12 in a general manner, an integer i of 1 or more and m or less is used. Similarly, in order to describe the data line 14 in a general manner, an integer j of 1 or more and (3n) or less is used.

[0034] The control circuit 30 controls each unit based on the video data Vid and the synchronization signal Sync supplied from an upper host device (not shown). Specifically, the control circuit 30 generates various control signals to control each unit.

[0035] The video data Vid specifies the grayscale of pixels in the image to be displayed using, for example, 8 bits. The synchronization signal Sync includes a vertical synchronization signal that indicates the start of vertical scanning of the video data Vid, a horizontal synchronization signal that indicates the start of horizontal scanning, and a dot clock signal that indicates the timing of one pixel of the video data.

[0036] In the present embodiment, pixels of an image to be displayed correspond one-to-one to the pixel portions 110 in the display region 100 .

[0037] The characteristics of brightness in the grayscale indicated by the image data Vid provided from the host device are not necessarily consistent with the characteristics of brightness in the OLED included in the pixel unit 110. Therefore, in order to make the OLED emit light at a brightness corresponding to the grayscale indicated by the image data Vid, the control circuit 30 up-converts 8 bits of the image data Vid into 10 bits, for example, and outputs the image data Vdata. Therefore, the 10-bit image data Vdata is data corresponding to the grayscale specified by the image data Vid.

[0038] In the up-conversion, a lookup table is used which stores in advance the correspondence between 8 bits of the input video data Vid and 10 bits of the output video data Vdata.

[0039] The scan line driving circuit 120 is a circuit for driving the pixel unit 110 arranged in m rows (3n) columns for each row according to the control of the control circuit 30. For example, the scan line driving circuit 120 sequentially supplies scan signals / Gwr(1), / Gwr(2), ..., / Gwr(m-1), / Gwr(m) to the scan lines 12 of the 1st, 2nd, 3rd, ..., (m-1), and mth rows. Generally speaking, the scan signal supplied to the scan line 12 of the i-th row is denoted as / Gwr(i).

[0040] The data signal output circuit 50 is a circuit that outputs a data signal to the pixel unit 110 located in the row selected by the scan line driving circuit 120 via the data line 14 according to the control of the control circuit 30. The data signal is a voltage signal obtained by converting the 10-bit image data Vdata into an analog signal. That is, the data signal output circuit 50 converts the image data Vdata of one row corresponding to the pixel unit 110 of the 1st to (3n)th columns in the selected row into analog signals, and outputs them to the data lines 14 of the 1st to (3n)th columns in this order.

[0041] In the figure, the data signals output to the data lines 14 of the 1st, 2nd, 3rd, ..., (3n-2), (3n-1), (3n) columns are marked as Vd(1), Vd(2), Vd(3), ..., Vd(3n-2), Vd(3n-1), Vd(3n) in sequence. Generally speaking, the potential of the data line 14 in the jth column is marked as Vd(j).

[0042] like Figure 2As shown, in the display area 100, in the pixel unit 110, in terms of electricity, the pixel unit 110 of R, the pixel unit 110 of B, and the pixel unit 110 of G are arranged along the X direction, and the pixel units 110 of the same color are arranged along the Y direction. Therefore, if we focus on any column of data lines 14, there is a pixel unit 110 of the same color. In addition, one color is expressed by additive color mixing of the pixel units 110 of RBG adjacent to each other in the X direction. Therefore, the pixel unit 110 should strictly be called a sub-pixel unit, but for the sake of convenience, it is expressed as a pixel unit.

[0043] Figure 3 1 is a diagram showing the electrical structure of the pixel unit 110 in the electro-optical device 10. The pixel units 110 arranged in m rows (3n) columns are electrically identical to each other. Therefore, the pixel unit 110 will be described using a pixel unit 110 corresponding to the i-th row and j-th column as a representative.

[0044] As shown in the figure, the pixel portion 110 includes P-channel MOS transistors 121 and 122 , an OLED 130 , and a capacitor 140 from an electrical point of view.

[0045] In the description of the pixel unit 110, "from an electrical point of view" is used to describe the multiple elements constituting the pixel unit 110 and the connection relationship between the multiple elements. The pixel unit 110 includes elements that do not contribute to the electrical connection relationship from a mechanical or physical point of view, so this expression is used.

[0046] The OLED 130 is an example of a light-emitting element, and an organic layer 132 including a light-emitting layer is sandwiched between a pixel electrode 131 and a common electrode 133. The pixel electrode 131 functions as an anode, and the common electrode 133 functions as a cathode. In addition, the details of the OLED 130 will be described later, but when current flows from the anode to the cathode, holes injected from the anode and electrons injected from the cathode recombine in the light-emitting layer of the organic layer 132 to generate excitons, thereby generating white light.

[0047] The white light produced by Figure 3 The reflective electrode omitted in the optical resonator and the common electrode 133 of the semi-reflective and semi-transmissive layer resonate in the optical resonator, and emits light at a resonant wavelength set corresponding to any color of red, green, and blue. A color filter corresponding to the color is provided on the emission side of the light emitted from the optical resonator. Therefore, the emitted light from the OLED 130 is colored by the optical resonator and the color filter and is seen by the observer.

[0048] In the transistor 121 of the pixel portion 110 in the i row and j column, the gate node g is connected to the drain node of the transistor 122 , the source node is connected to the supply line 116 of the voltage Vel, and the drain node is connected to the pixel electrode 131 which is the anode of the OLED 130 .

[0049] In the transistor 122 of the pixel portion 110 in the i-th row and the j-th column, the gate node is connected to the scanning line 12 of the i-th row, and the source node is connected to the data line 14 of the j-th column. The common electrode 133 functioning as the cathode of the OLED 130 is connected to the power supply line 118 of the voltage Vct. In addition, since the electro-optical device 10 is formed on a silicon substrate, the substrate potential of the transistors 121 and 122 is set to a potential equivalent to the voltage Vel, for example.

[0050] Figure 3 The pixel unit 110 shown is the same for each color of red, green and blue from an electrical point of view, so it is generally described without specifying a specific color, but it is different for each color from a structural point of view. Therefore, when describing it by color, it is marked as pixel unit 110R, 110G, 110B. Similarly, regarding OLED 130 and pixel electrode 131, when describing it by color, it is also marked as OLED 130R, 130G, 130B, and marked as pixel electrode 131R, 131G, 131B.

[0051] Figure 4 It is a timing chart for explaining the operation of the electro-optical device 10 .

[0052] In the electro-optical device 10, the m rows of scanning lines 12 are scanned row by row in the order of the 1st, 2nd, 3rd, ..., mth rows during a frame (V). Specifically, as shown in the figure, the scanning signals / Gwr(1), / Gwr(2), ..., / Gwr(m-1), / Gwr(m) are exclusively turned into L level in sequence during each horizontal scanning period (H) by the scanning line driving circuit 120.

[0053] In addition, in the present embodiment, the periods during which adjacent scanning signals in the scanning signals / Gwr(1) to / Gwr(m) are at L level are isolated in time. Specifically, after the scanning signal / Gwr(i-1) changes from L level to H level, the next scanning signal / Gwr(i) becomes L level after an interval period. This period corresponds to the horizontal retrace period.

[0054] In this description, the period of one frame (V) refers to the period required to display one frame of the image specified by the image data Vid. If the length of the period of one frame (V) is the same as the vertical synchronization period, for example, if the frequency of the vertical synchronization signal included in the synchronization signal Sync is 60 Hz, then the length of the period of one frame (V) is 16.7 milliseconds, which is equivalent to one cycle of the vertical synchronization signal. In addition, the horizontal scanning period (H) is the interval of time when the scanning signals / Gwr(1) to / Gwr(m) successively become L level, but for convenience in the figure, the start timing of the horizontal scanning period (H) is set to the approximate center of the horizontal retrace period.

[0055] When one of the scanning signals / Gwr(1) to / Gwr(m), for example, the scanning signal / Gwr(i) supplied to the scanning line 12 of the i-th row, becomes L level, the transistor 122 becomes conductive in the pixel portion 110 of the i-th row and the j-th column with respect to the j-th column. Therefore, the gate node g of the transistor 121 in the pixel portion 110 becomes electrically connected to the data line 14 of the j-th column.

[0056] In this description, the “on state” of a transistor refers to a state where the source node and the drain node of the transistor are electrically closed and low impedance is achieved. In addition, the “off state” of a transistor refers to a state where the source node and the drain node are electrically opened and high impedance is achieved.

[0057] In this specification, "electrically connected" or simply "connected" refers to a state where two or more elements are directly or indirectly connected or coupled. "Non-electrically connected" or simply "non-connected" refers to a state where two or more elements are not directly or indirectly connected or coupled.

[0058] During the horizontal scanning period (H) when the scanning signal / Gwr(i) is at the L level, the data signal output circuit 50 converts the grayscale level of the pixels in the i-row 1 column to the i-row n column indicated by the image data Vdata into analog potentials Vd(1) to Vd(n), and outputs the grayscale level as a data signal to the data lines 14 of the 1st to nth columns. For the j-th column, the data signal output circuit 50 converts the grayscale level d(i, j) of the pixels in the i-row j-th column into an analog signal potential Vd(j), and outputs the data signal as a data signal to the data line 14 of the j-th column.

[0059] In addition, during the horizontal scanning period (H) when the scanning signal / Gwr(i-1) of the previous row of the scanning signal / Gwr(i) becomes the L level, the data signal output circuit 50 converts the grayscale level d(i-1, j) of the pixel in the (i-1) row and j column into the potential Vd(j) of the analog signal, and outputs it as a data signal to the data line 14 of the j column.

[0060] The data signal of the potential Vd(j) is applied to the gate node g of the transistor 121 in the pixel portion 110 of the i row and j column via the data line 14 of the j column, and the potential Vd(j) is held by the capacitor 140. Therefore, the transistor 121 allows a current corresponding to the voltage between the gate node and the source node to flow to the OLED 130.

[0061] Even if the scanning signal Gwr(i) becomes H level, the transistor 122 becomes off, and the potential Vd(j) is also held by the capacitor 140, so that current continues to flow through the OLED 130. Therefore, in the pixel portion 110 of the i row and j column, the OLED 130 continues to emit light at a brightness corresponding to the voltage held by the capacitor 140, that is, the grayscale level, until the transistor 122 is turned on again after a period of one frame (V) and the voltage of the data signal is applied again.

[0062] In addition, although the pixel unit 110 in the i-th row and the j-th column is described here, the OLED 130 in the pixel unit 110 other than the i-th row and the j-th column also emits light at the brightness indicated by the image data Vdata.

[0063] Furthermore, the OLEDs 130 of the pixel units 110 other than the i-th row also emit light at the brightness indicated by the video data Vdata as the scanning signals / Gwr(1) to / Gwr(m) are sequentially turned to the L level.

[0064] Therefore, in the electro-optical device 10 , during one frame (V), the OLEDs 130 in all the pixel units 110 from the 1st row and the 1st column to the mth row and the nth column emit light at the brightness indicated by the video data Vdata, and an image of one frame is displayed.

[0065] Figure 5 1 is a top view showing the arrangement of the pixel unit 110 in the display region 100. In the display region 100, the color of a point is expressed by additive color mixing based on the emitted light from the three light emitting regions surrounded by the frame Dp in the figure. Specifically, in the frame Dp, the light emitting regions R, G, and B are arranged in this order along the X direction.

[0066] Figure 6 110 is a cross-sectional view of the main parts showing a region including a portion of the pixel portion 110R and the pixel portion 110G cut along the X direction. Figure 7 110G and a portion of the pixel portion 110B are shown in a cross-sectional view of the main parts, cut along the X direction. Figure 8 It is a cross-sectional view of the main parts showing a region including two adjacent pixel portions 110R cut along the Y direction.

[0067] In the pixel portion 110R, the reflective electrode 62R, the optical adjustment layer 70 , the pixel electrode 131R, the pixel isolation layer 134 , and the organic layer 132 are stacked in this order.

[0068] The reflective electrode 62R is formed corresponding to the pixel portion 110R. Figure 5 The light-reflecting conductive electrode patterned in a rectangular shape as shown reflects light incident from the direction opposite to the Z direction in the Z direction. As the reflective electrode 62R, for example, a conductive layer formed by laminating an aluminum and copper alloy (AlCu) film on a titanium (Ti) film is used.

[0069] The optical adjustment layer 70 is a laminate of transparent insulating layers such as silicon oxide (SiO2) and silicon nitride (SiN). The thickness of the optical adjustment layer 70 is different in the pixel units 110R, 110G, and 110B as described later. In the pixel unit 110R, the thickness of the optical adjustment layer 70 between the reflective electrode 62R and the pixel electrode 131R is L. R In this description, the thickness of a layer or an electrode refers to the distance along the Z direction when viewed in cross section.

[0070] In this embodiment, the pixel electrode 131R is made of titanium nitride (TiN) having light transmittance and light reflectivity. Figure 5 The conductive electrodes are patterned into rectangles as shown.

[0071] In addition, if Figure 5 and Figure 8 As shown in FIG. 1 , the pixel electrode 131R is electrically connected to the reflective electrode 62R via a contact hole Ct_R. Furthermore, the reflective electrode 62R is electrically connected to the drain node of the transistor 121 via another contact hole (not shown).

[0072] The pixel isolation layer 134 is stacked on the optical adjustment layer 70 and the pixel electrode 131R, and is a light-transmitting insulating film provided to cover the peripheral edge of the pixel electrode 131R. Figure 5 The pixel isolation layer 134 is formed of, for example, silicon oxide.

[0073] The organic layer 132 is stacked on the pixel electrode 131R or the pixel isolation layer 134. As described later, the organic layer 132 includes a hole injection layer, a light emitting layer, an electron transport layer, and the like, and is common to all of the pixel portions 110R, 110G, and 110B.

[0074] In the pixel portion 110G, similarly to the pixel portion 110R, the reflective electrode 62G, the optical adjustment layer 70, the pixel electrode 131G, the pixel separation layer 134, and the organic layer 132 are stacked in this order. However, the thickness L of the optical adjustment layer 70 in the pixel portion 110G is G The thickness L of the optical adjustment layer 70 in the pixel portion 110R is R Thin.

[0075] In the pixel section 110B, similarly to the pixel sections 110R and 110G, the reflective electrode 62B, the optical adjustment layer 70, the pixel electrode 131B, the pixel separation layer 134, and the organic layer 132 are stacked in this order. However, the thickness L of the optical adjustment layer 70 in the pixel section 110B is B The thickness L of the optical adjustment layer 70 in the pixel portion 110G is G Thin.

[0076] That is, the thickness of the optical adjustment layer 70 is:

[0077] L R >L G >L B .

[0078] In addition, the thickness L of the optical adjustment layer 70 is R , L G , L B The specific values ​​of will be described later.

[0079] In addition, Figure 6 , Figure 7 as well as Figure 8 Although not shown in the figure, a driving circuit and the like are formed in a layer below the reflective electrodes 62R, 62G, and 62B, and a common electrode 133, a sealing layer, a color filter, a protective glass, and the like are provided in a layer above the organic layer 132.

[0080] like Figure 6 As shown in the figure, the end of the opening Ap_R of the pixel portion 110R close to the pixel portion 110G adjacent in the X direction is denoted as P1. In addition, the end of the reflective electrode 62R of the pixel portion 110R close to the pixel portion 110G is denoted as P2, and the end of the pixel electrode 131R of the pixel portion 110R close to the pixel portion 110G is denoted as P3. The ends P1, P2, and P3 are arranged in the order of the ends P1, P2, and P3 along the X direction in a plan view.

[0081] In the direction opposite to the X direction, the ends of the opening Ap_R, the reflective electrode 62R, and the pixel electrode 131R are also arranged in this order in a plan view.

[0082] In addition, if Figure 8 As shown, an end of the opening Ap_R of the pixel portion 110R close to the pixel portion 110R of the same color adjacent in the Y direction is denoted as P7. In addition, an end of the reflective electrode 62R of the pixel portion 110R close to the pixel portion 110R adjacent in the Y direction is denoted as P8, and an end of the pixel electrode 131R of the pixel portion 110R close to the pixel portion 110R adjacent in the Y direction is denoted as P9. The ends P7, P8, and P9 are arranged in the order of the ends P7, P8, and P9 along the Y direction in a plan view.

[0083] like Figure 5 As shown in FIG. 1 , the opening Ap_R is included in the reflective electrode 62R in a plan view. In addition, the reflective electrode 62R is included in the pixel electrode 131R except for the side located in the opposite direction to the Y direction in the figure.

[0084] In order to explain the effect of the embodiment having such a positional relationship, a first comparative example with respect to the embodiment will be described.

[0085] Fig. 9 This is a cross-sectional view of the main parts of the electro-optical device according to the first comparative example, showing a region including a portion of the pixel portion 110R and the pixel portion 110G cut along the X direction.

[0086] In the first comparative example, unlike the embodiment, the end P1 of the opening Ap_R in the pixel portion 110R, the end P2 of the reflective electrode 62R, and the end P3 of the pixel electrode 131R are arranged in the order of the ends P1, P3, and P2 along the X direction when viewed from above. That is, in the first comparative example, when viewed from above, the opening Ap_R is included in the pixel electrode 131R, and the pixel electrode 131R is included in the reflective electrode 62R.

[0087] like Fig. 9 As shown by the middle arrow, in the first comparative example, among the light emitted from the organic layer 132 near the end P1 of the opening Ap_R, the light emitted in the direction inclined opposite to the Z direction passes through the pixel electrode 131R, is reflected by the reflective electrode 62R, and is emitted through a position outside the opening Ap_R. Since the longer the wavelength of light, the longer the optical path length in the optical resonance structure, the red light is particularly likely to be emitted through the portion other than the opening Ap_R and be seen by the user.

[0088] In contrast, in this embodiment, if Figure 6As shown by the middle arrow, among the light emitted from the organic layer 132 near the end P1 of the opening Ap_R, the light emitted in the direction inclined opposite to the Z direction passes through the pixel electrode 131R, is reflected by the reflective electrode 62R, and passes through the pixel electrode 131R again. The reflected light of the reflective electrode 62R is attenuated when passing through the pixel electrode 131R again, so that the peripheral light emission is suppressed.

[0089] In addition, although the description here focuses on the red pixel portion 110R, the green pixel portion 110G and the blue pixel portion 110B can also suppress peripheral emission caused by light reflected in an oblique direction being seen, similarly to the pixel portion 110R.

[0090] In the embodiment, the width L of the ends P2 and P3 along the X direction is preferably 23 Width L between ends P1 and P2 12 Large structure. According to this structure, with the width L 23 The width L 12 Compared with the following configuration, the ratio of oblique light reflected by the reflective electrode 62R to be absorbed by the pixel electrode 131R becomes higher, so that peripheral light emission can be further suppressed.

[0091] In addition, width refers to the distance between two points along a specific direction.

[0092] In the embodiment, it is preferable that the width L of the ends P2 and P3 along the X direction is 23 The width L of the ends P1 and P2 along the X direction is 12 According to this structure, compared with a structure in which the width of the ends P2 and P3 is less than the width of the ends P1 and P2, the ratio of oblique light reflected by the reflective electrode 62R absorbed by the pixel electrode 131R becomes higher, so that peripheral light emission can be further suppressed.

[0093] In the embodiment, it is preferable that the width L of the ends P2 and P3 along the X direction is 23 The width L of the ends P3 and P6 along the X direction is 36 , that is, the width of the gap between the pixel electrodes 131R adjacent to each other in the X direction is large. 23 The width L 36 Compared with the following configuration, the ratio of oblique light reflected by the reflective electrode 62R to be absorbed by the pixel electrode 131R becomes higher, so that peripheral light emission can be further suppressed.

[0094] Titanium nitride used for the pixel electrodes 131R, 131G, and 131B has light reflectivity and absorption properties, and therefore its film thickness is preferably as thin as possible, and specifically, preferably not less than 5 nm and less than 20 nm.

[0095] There are many steps around the openings Ap_R, Ap_G, and Ap_B due to other elements such as contact holes. When light is emitted at the steps, the optical path length is longer than the designed value, so the long-wavelength light component is easily emitted to the outside. For example, when peripheral light is generated in the green pixel unit 130G, it becomes reddish light.

[0096] Titanium nitride used for the pixel electrodes 131R, 131G, and 131B has high absorptivity and reflectivity on the long wavelength side. Therefore, by arranging the pixel electrodes 131R, 131G, and 131B to be wider than the openings Ap_R, Ap_G, and Ap_B in a plan view, peripheral light emission can be suppressed.

[0097] Fig.10 It is a cross-sectional view of main parts showing the structure from the reflective electrode to the common electrode in this embodiment, in particular, the detailed structure of the organic layer.

[0098] The optical adjustment layer 70 stacked on the reflective electrodes 62R, 62G, and 62B is provided to have a thickness L for each color as described above. R , L G , L B The organic layer 132 is disposed between the pixel electrode 131R, 131G or 131B and the common electrode 133 .

[0099] The organic layer 132 is composed of the following layers. Specifically, the organic layer 132 is a structure in which a hole injection layer 1321 (HIL: Hole Injection Layer), a hole transport layer 1322 (HTL: Hole Transporting Layer), a red light emitting layer 132R (R-EML: Red EMission Layer), an intermediate layer 1323, a blue light emitting layer 132B (B-EML: Blue EMissionLayer), a green light emitting layer 132G (G-EML: Green EMission Layer), a hole blocking layer 1324 (HBL: HoleBlocking Layer), an electron transport layer 1325 (ETL: Electron Transporting Layer) and an electron injection layer 1326 (EIL: Electron Injection Layer) are stacked in this order.

[0100] Fig.10 is a structure that emits white light, but Fig.11 As shown, a structure in which the red light-emitting layer 132R, the green light-emitting layer 132G, and the blue light-emitting layer 132B are provided for each pixel portion 130R, 130G, and 130B may be adopted.

[0101] In this structure, a red light emitting layer 132R, a green light emitting layer 132G, and a blue light emitting layer 132B are provided for each color (each sub-pixel), so it is different from a structure in which three light emitting layers are stacked, that is, Fig.10 Compared with the structure shown, power saving can be achieved.

[0102] exist Fig.11 In the embodiment, the electron blocking layer 1327 (EBL: Electron Blocking Layer) is provided between the red light emitting layer 132R, the green light emitting layer 132G or the blue light emitting layer 132B and the hole transport layer 1322. Fig.10 and Fig.11 The pixel separation layer 134 is omitted.

[0103] In this embodiment, the superiority of the optical resonance structure having different thicknesses for each color is described by comparison with the second comparative example.

[0104] Fig.12 It is a cross-sectional view of main parts showing the structure of an electro-optical device according to a second comparative example.

[0105] In the second comparative example, the organic layer 132 has the same layer structure as the organic layer 132 of the embodiment, but the optical adjustment layer 70 is not provided, and the reflective electrode 62R also serves as the pixel electrode 131R. Similarly, in the second comparative example, the reflective electrode 62G also serves as the pixel electrode 131G, and the reflective electrode 62B also serves as the pixel electrode 131B.

[0106] In the second comparative example, in the red pixel unit 110R, light emitted from the organic layer 132 is reflected by the reflective electrode 62R, a portion of the reflected light passes through the common electrode 133 and is viewed by the user, and the remaining portion of the reflected light is reflected by the common electrode 133 and travels toward the reflective electrode 62R. However, in the second comparative example, since the distance between the reflective electrode 62R, 62G, or 62B and the common electrode 133 is equal for each color, resonance does not occur according to the optical path length, and light extraction efficiency is low.

[0107] In addition, a natural oxide film having a thickness of about several nm is formed on the surface of the reflective electrodes 62R, 62G, and 62B, which are mainly composed of aluminum, so that it is difficult for charges to be injected from the anode. Therefore, in order to ensure the necessary brightness, it is necessary to increase the driving voltage of the OLED 130. However, in the micro display panel, in order to achieve micro-differentiation of pixels, the withstand voltage of the transistor 122 is limited, so the OLED 130 cannot be driven at a higher voltage. Therefore, in the second comparative example, the maximum brightness of the micro display panel is low.

[0108] In addition, in order to prevent the formation of a natural oxide film on the surfaces of the reflective electrodes 62R, 62G, and 62B, it is also possible to consider Fig.13 As shown in FIG. 1 , a conductive conductive film 63 (for example, titanium nitride) is provided between the reflective electrodes 62R, 62G, and 62B and the hole injection layer 1321. This structure is a third comparative example. However, in the third comparative example, due to the presence of the conductive conductive film 63, the reflectivity of the reflective electrodes 62R, 62G, and 62B is reduced, so the light extraction efficiency is further reduced compared with the second comparative example.

[0109] In this embodiment, a resonant structure is used in which light emitted from the organic layer 132 is repeatedly reflected between the reflective electrode 62R, 62G or 62B and the common electrode 133. The optical distance in the resonant structure is proportional to the thickness L of the optical adjustment layer 70 for each RGB color. R , L G , L B Since the adjustment is performed, the light extraction efficiency corresponding to the wavelength is improved.

[0110] Fig.14 1 is a diagram showing the dimensions of each part in the present embodiment and the third comparative example, Fig.15 : is a graph showing the power consumption and color gamut coverage in the present embodiment and the third comparative example. In the third comparative example, since the optical adjustment layer 70 is not provided, the light extraction efficiency is low. Therefore, in the third comparative example, the power consumption is increased and the color gamut that can be reproduced is low compared to the present embodiment.

[0111] In contrast, in the present embodiment, the light extraction efficiency is improved, so that low power consumption can be achieved and the reproducible color gamut can be expanded.

[0112] In this embodiment, the titanium nitride used in the pixel electrodes 131R, 131G, and 131B is a conductive layer used as a barrier metal in the semiconductor manufacturing process, so there is no concern about heavy metal pollution in the semiconductor manufacturing process. Therefore, the use of titanium nitride in the pixel electrodes 131R, 131G, and 131B does not require special research in the semiconductor manufacturing process.

[0113] In the manufacturing process of the electro-optical device 10, the process up to the film formation of the pixel separation layer 134 and the setting of the openings Ap_R, Ap_G and Ap_B is a semiconductor manufacturing process, and the process after this process is the film formation of the organic layer 132, using other manufacturing equipment. Therefore, when the substrate provided with the openings Ap_R, Ap_G and Ap_B is transferred to the manufacturing device for forming the organic layer 132, the substrate is exposed to the atmosphere. However, in the present embodiment, the pixel electrodes 131R, 131G and 131B opened in the openings Ap_R, Ap_G and Ap_B are nitride films, so the generation of natural oxide films is limited. Therefore, it is possible to transfer the pixel electrodes 131R, 131G and 131B to the manufacturing device for forming the organic layer 132 while keeping the contact resistance of the surface of the pixel electrodes 131R, 131G and 131B low.

[0114] Hole injection from the pixel electrodes 131R, 131G, and 131B, which are conductive titanium nitride, to the organic layer 132 can be achieved by using a material with strong electrical attraction. As such a material, HAT-CN (2, 3, 6, 7, 10, 11-hexacyano-1, 4, 5, 8, 9, 12-hexaazatriphenylene) can be cited. When the hole injection layer 1321 is composed of an organic thin film containing a cyano group represented by HAT-CN, holes can be easily injected even from titanium nitride, which has a low work function.

[0115] Furthermore, in the embodiment, an OLED is cited as an example of a light-emitting element, but the present invention is not limited thereto, and an inorganic EL element or a μLED element using an inorganic material may also be used.

[0116] Next, an electronic device to which the electro-optical device 10 of the embodiment is applied will be described. The electro-optical device 10 is suitable for use in a display having small pixels and high definition. Therefore, a head mounted display will be described as an example of the electronic device.

[0117] Fig.16 is a diagram showing the appearance of a head mounted display. Fig.17 This is a diagram showing its optical structure.

[0118] First, if Fig.16 As shown in FIG. 1 , the head mounted display 300 has temples 310, a nose bridge 320, and lenses 301L and 301R similar to ordinary glasses in appearance. Fig.17 As shown, the head mounted display 300 is provided with an electro-optical device 10L for the left eye and an electro-optical device 10R for the right eye near the nose bridge 320 and on the back side (lower side in the figure) of the lenses 301L and 301R.

[0119] The image display surface of the electro-optical device 10L is Fig.17The image display surface of the electro-optical device 10R is arranged on the right side opposite to the electro-optical device 10L. Thus, the image display of the electro-optical device 10R is emitted in the direction of 3 o'clock in the figure via the optical lens 302R. The half-mirror 303R reflects the image display of the electro-optical device 10R in the direction of 6 o'clock, and on the other hand, allows light incident from the direction of 12 o'clock to pass through.

[0120] In this configuration, the wearer of the head mounted display 300 can observe the display images of the electro-optical devices 10L and 10R in a see-through state superimposed on the external scene.

[0121] In the head mounted display 300 , if the electro-optical device 10L displays the left eye image and the electro-optical device 10R displays the right eye image in binocular images with parallax, the wearer can perceive the displayed images as if they have depth and three-dimensionality.

[0122] In addition, electronic devices including the electro-optical device 10 can be applied to electronic viewfinders in video cameras or digital cameras with interchangeable lenses, portable information terminals, display units of watches, light valves of projection projectors, and the like, in addition to the head mounted display 300.

[0123] From the above description, the preferred embodiment of the present disclosure can be understood as follows. In addition, in order to easily understand each embodiment, the reference numerals of the drawings are collectively described in parentheses for convenience, but the present invention is not intended to be limited to the illustrated embodiments.

[0124] An electro-optical device according to one embodiment of the present invention comprises: a first reflective layer (62R) and a second reflective layer (62G) which are reflective and adjacent to each other along a first direction when viewed from above; a first pixel electrode (131R) and a second pixel electrode (131G) which are made of metal nitride and adjacent to each other along a first direction (X direction) when viewed from above; a first optical adjustment layer (70) which is insulating and light-transmissive and is disposed between the first reflective layer (62R) and the first pixel electrode (131R); and a second optical adjustment layer (70) which is insulating and light-transmissive and is disposed between the second reflective layer and the first pixel electrode. 2 pixel electrodes; an insulating layer (134) which is open at a first opening (Ap_R) relative to the first pixel electrode (131R) when viewed from above, and is open at a second opening (Ap_G) relative to the second pixel electrode (131G) when viewed from above; a common electrode (133); an organic layer (132) including a light-emitting layer, which is arranged between the common electrode (133) and the insulating layer (134), the first pixel electrode (131R) or the second pixel electrode (131G), and when viewed from above, the end of the first opening (Ap_R) adjacent to the second opening (Ap_G) The first end (P1) is an end of the first reflective layer (62R) adjacent to the second reflective layer (62G) is a second end (P2), the end of the first pixel electrode (131R) adjacent to the second pixel electrode (131G) is a third end (P3), the end of the second opening Ap_G adjacent to the first opening Ap_R is a fourth end (P4), the end of the second reflective layer 62G adjacent to the first reflective layer 62R is a fifth end (P5), the end of the second pixel electrode (131G) adjacent to the first pixel electrode (131R) is a fifth end (P6), and the end of the second pixel electrode (131G) adjacent to the first pixel electrode (131R) is a fifth end (P7). The sixth end (P6) is disposed at the first end (P1), the second end (P2) and the third end (P3) in the order of the first end (P1), the second end (P2) and the third end (P3) along the first direction (X direction) from the first opening (Ap_R) toward the second opening (Ap_G), and the fourth end (P4), the fifth end (P5) and the sixth end (P6) are disposed in the order of the fourth end (P4), the fifth end (P5) and the sixth end (P6) along the first direction (X direction) from the second opening (Ap_G) toward the first opening (Ap_R). According to the first embodiment, peripheral light emission can be reduced.

[0125] In a specific mode (mode 2) of mode 1, the electro-optical device (10) comprises: a third reflective layer (62R) having a reflective property and being adjacent to the first reflective layer (62R) along a second direction (Y direction) intersecting the first direction (X direction) when viewed from above; and a third pixel electrode (131R) made of a metal nitride and being adjacent to the first pixel electrode (131R) along the second direction (Y direction) when viewed from above, a first optical adjustment layer (70) being arranged between the third reflective layer (62R) and the third pixel electrode (131R), an insulating layer (134) being opened at a third opening (Ap_R) relative to the third pixel electrode (131R) when viewed from above, and an organic layer (132) being arranged between the common electrode and the insulating layer ( 134) or the third pixel electrode (131R), when viewed from above, the end of the third opening portion (Ap_R) adjacent to the first opening portion (Ap_R) is the seventh end (P7), the end of the third reflective layer (62R) adjacent to the first reflective layer (62R) is the eighth end (P8), the end of the third pixel electrode (131R) adjacent to the first pixel electrode (131R) is the ninth end (P9), and the seventh end (P7), the eighth end (P8) and the ninth end (P9) are arranged along the second direction (Y direction) from the third opening portion (Ap_R) toward the first opening portion (Ap_R) in the order of the seventh end (P7), the eighth end (P8) and the ninth end (P9).

[0126] In the electro-optical device (10) of a specific embodiment (embodiment 3) of embodiment 1, when viewed from above, a width (L) between the second end (P2) and the third end (P3) along the first direction (X direction) is 23 ) is greater than the width (L) between the first end (P1) and the second end (P2) 12 ).

[0127] In the electro-optical device (10) of a specific embodiment (Aspect 4) of Embodiment 1, a width (L) between the second end (P2) and the third end (P3) along the first direction (X direction) when viewed from above is 23 ) is greater than the width (L) between the third end (P3) and the sixth end (P6) 36 ).

[0128] In the electro-optical device (10) of a specific embodiment (embodiment 5) of embodiment 1, the organic layer (132) includes a hole injection layer (1321) which is in contact with the first pixel electrode (131R) and the second pixel electrode (131G) and is composed of HAT-CN.

[0129] In the electro-optical device (10) of a specific aspect (aspect 6) of aspect 1, the thickness of the first pixel electrode (131R) and the second pixel electrode (131G) is greater than or equal to 5 nm and less than 20 nm.

[0130] An electronic device (300) according to aspect 7 includes the electro-optical device (10) according to any one of aspects 1 to 6.

Claims

1. An electro-optical device, characterized in that The electro-optical device has: A first reflecting layer and a second reflecting layer which are reflective and adjacent to each other along a first direction when viewed from above; a first pixel electrode and a second pixel electrode which are made of metal nitride and are adjacent to each other along the first direction when viewed from above; a first optical adjustment layer having insulation and light transmittance and disposed between the first reflective layer and the first pixel electrode; a second optical adjustment layer having insulation and light transmittance and disposed between the second reflective layer and the second pixel electrode; an insulating layer which is open at a first opening relative to the first pixel electrode in a plan view, and is open at a second opening relative to the second pixel electrode in a plan view; Common electrode; as well as an organic layer including a light-emitting layer, which is disposed between the common electrode and the insulating layer, the first pixel electrode or the second pixel electrode, When looking down, The end portion of the first opening adjacent to the second opening is a first end, the end portion of the first reflective layer adjacent to the second reflective layer is a second end, and the end portion of the first pixel electrode adjacent to the second pixel electrode is a third end. The end of the second opening adjacent to the first opening is a fourth end, the end of the second reflective layer adjacent to the first reflective layer is a fifth end, and the end of the second pixel electrode adjacent to the first pixel electrode is a sixth end. The first end, the second end, and the third end are arranged in the order of the first end, the second end, and the third end from the first opening toward the second opening along the first direction, The fourth end, the fifth end, and the sixth end are arranged in this order from the second opening toward the first opening along the first direction.

2. The electro-optical device according to claim 1, characterized in that The electro-optical device comprises: a third reflective layer having a light-reflecting property and adjacent to the first reflective layer along a second direction intersecting the first direction when viewed from above; and a third pixel electrode, which is made of metal nitride and is adjacent to the first pixel electrode along the second direction when viewed from above, The first optical adjustment layer is disposed between the third reflective layer and the third pixel electrode. The insulating layer is opened at a third opening relative to the third pixel electrode in a plan view, The light emitting layer is disposed between the common electrode and the insulating layer or the third pixel electrode. When looking down, The end of the third opening adjacent to the first opening is a seventh end, the end of the third reflective layer adjacent to the first reflective layer is an eighth end, and the end of the third pixel electrode adjacent to the first pixel electrode is a ninth end. The seventh end, the eighth end, and the ninth end are arranged in this order from the third opening toward the first opening along the second direction.

3. The electro-optical device according to claim 1, characterized in that In a plan view, a width between the second end and the third end along the first direction is greater than a width between the first end and the second end.

4. The electro-optical device according to claim 1, characterized in that In a plan view, a width between the second end and the third end along the first direction is greater than a width between the third end and the sixth end.

5. The electro-optical device according to claim 1, characterized in that The organic layer includes a hole injection layer that is in contact with the first pixel electrode and the second pixel electrode and is composed of HAT-CN.

6. The electro-optical device according to claim 1, characterized in that The thickness of the first pixel electrode and the second pixel electrode is greater than or equal to 5 nm and less than 20 nm. 7 . An electronic device comprising the electro-optical device according to claim 1 .

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