Micro LED and micro LED display panel

Abstract

A micro LED includes: two or more light emitting mesas disposed in a vertical direction from top to bottom; the light emitting device includes a plurality of light emitting mesas, and at least one distributed Bragg reflection (DBR) layer formed between adjacent light emitting mesas, and configured to reflect light emitted by a light emitting mesa disposed above the DBR layer in the adjacent light emitting mesas, and to pass light emitted by one or more light emitting mesas disposed below the DBR layer.

Description

Technical Field

[0001] The present disclosure relates generally to micro-LED manufacturing technology, and more particularly, to micro-LEDs and micro-LED display panels. Background Art

[0002] Inorganic micro-pixel light-emitting diodes, also known as micro-light-emitting diodes, micro-LEDs, or μ-LEDs, have become increasingly important for a variety of applications including self-luminous micro-displays, visible light communications, and optogenetics. Micro-LEDs have higher output performance than conventional LEDs due to better strain relaxation, higher light extraction efficiency, and uniform current spreading. Micro-LEDs also show several advantages over conventional LEDs, such as improved thermal effects, faster response speeds, a larger operating temperature range, higher resolution, a wider color gamut, higher contrast, lower power consumption, and operability at higher current densities.

[0003] The micro LED may include multiple light-emitting mesas, and each light-emitting mesa may be electrically connected to a corresponding electrode so that each light-emitting mesa can be controlled. Since the multiple light-emitting mesas are arranged in a vertical direction, light loss may occur in the micro LED, which may reduce light-emitting efficiency. Summary of the invention

[0004] The embodiment of the present disclosure provides a micro LED. The micro LED includes: two or more light-emitting mesas arranged in a vertical direction from top to bottom; and at least one distributed Bragg reflection (DBR) layer formed between adjacent light-emitting mesas and configured to reflect light emitted by a light-emitting mesa arranged above the DBR layer among the adjacent light-emitting mesas, and to allow light emitted by one or more light-emitting mesas arranged below the DBR layer to pass.

[0005] The embodiments of the present disclosure also provide a micro LED display panel. The micro LED display panel includes an integrated circuit (IC) backplane, which includes a bottom pad array, the bottom pad array includes a plurality of bottom pads; and a micro LED array, which is formed on the IC backplane, the micro LED array includes a plurality of the above micro LEDs. One micro LED in the plurality of micro LEDs is electrically connected to a group of bottom pads in the plurality of bottom pads. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Embodiments and various aspects of the present disclosure are described in the following detailed description and accompanying drawings. The various features shown in the drawings are not drawn to scale.

[0007] Figure 1A structural diagram showing an exemplary dielectric distributed Bragg reflector (DBR) layer is shown according to some embodiments of the present disclosure.

[0008] Figure 2 A structural diagram showing an exemplary micro-LED according to some embodiments of the present disclosure is shown.

[0009] Figure 3 is a diagram showing some embodiments according to the present disclosure. Figure 2 A table of exemplary parameters for the first DBR layer and the second DBR layer is shown.

[0010] Figure 4 is a diagram showing some embodiments according to the present disclosure. Figure 3 FIG. 5 is a graph showing the relationship between the reflectivity of the first DBR layer and the second DBR layer and the wavelength of light.

[0011] Figure 5 A structural diagram showing a top view of a micro LED display panel according to some embodiments of the present disclosure is shown. DETAILED DESCRIPTION

[0012] Now specific reference will be made to the exemplary embodiments. Examples of these exemplary embodiments are shown in the accompanying drawings. The following description refers to the accompanying drawings, wherein, unless otherwise stated, the same numbers in different figures represent the same or similar elements. The implementations set forth in the following description of the exemplary embodiments do not represent all implementations consistent with the present invention. On the contrary, these implementations are only examples of devices and methods consistent with the aspects of the invention described in the attached claims. Specific aspects of the present disclosure are described in more detail below. If the terms and definitions provided herein conflict with the terms and / or definitions incorporated by reference, the terms and definitions provided herein shall prevail.

[0013] Embodiments of the present disclosure provide a micro-LED with improved luminous efficiency. The micro-LED includes at least two light-emitting mesas arranged in a vertical direction, and at least one dielectric distributed Bragg reflector (DBR) layer arranged between adjacent light-emitting mesas. Each DBR layer includes a first layer and a second layer that are alternately layered. The DBR layer is configured to reflect light emitted by the light-emitting mesas above the DBR layer, and to allow light emitted by one or more light-emitting mesas below the DBR layer to pass, so that the luminous efficiency of the micro-LED is improved, and each light-emitting mesa can have the same size.

[0014] Figure 1 A structural diagram showing an exemplary DBR layer 100 according to some embodiments of the present disclosure is shown. Figure 1As shown, the DBR layer 100 includes a first layer 110 and a second layer 120 that are alternately layered. The refractive index of the first layer 110 is represented as n1, and the thickness of the first layer 110 is represented as d1. The refractive index of the second layer 120 is represented as n2, and the thickness of the second layer 120 is represented as d2. The wavelength to be reflected by the DBR layer 100 is represented as λ b Wavelength λ b It can be selected according to the wavelength range to be reflected by the DBR layer 100. Different materials may have different refractive indices. In some embodiments, the thickness d1 of the first layer 110 can be obtained by equation (1):

[0015]

[0016] The thickness d2 of the second layer 120 can be obtained by equation (2):

[0017]

[0018] The stop band B of the DBR layer 100 can be obtained by equation (3):

[0019]

[0020] In the present disclosure, the stop band B of the DBR layer 100 represents a range of wavelengths, and light within the range of wavelengths cannot pass through the DBR layer 100 and is totally reflected by the DBR layer 100. After selecting the materials of the first layer and the second layer, the corresponding refractive indices n1 and n2 are determined accordingly. In order to obtain better reflection efficiency, a suitable stop band B can be obtained by adjusting the wavelength λb based on equation (3). The value of the wavelength λb should be adjusted according to the range of wavelengths of the light to be reflected, for example, the range of wavelengths of light emitted by the light-emitting mesa above the DBR layer. The stop band B can be set to 100 nm, or in some embodiments, the stop band B can be less than 100 nm, for example, 80 nm, which can be determined according to specific practice. Then, the thickness d1 and the thickness d2 can be determined according to equations (1) and (2), respectively.

[0021] In some embodiments, the total number of the first layer 110 and the second layer 120 is represented as N, and N is a positive integer greater than 1. The total thickness of the DBR layer 100 is the sum of the thicknesses of the N layers of the first layer 110 and the second layer 120. In some embodiments, when N is an even number, the number of the first layer 110 and the number of the second layer 120 are the same, that is, N / 2. When N is an odd number, the number of the first layer 110 is greater than the number of the second layer 120, that is, the number of the first layer 110 is (N+1) / 2, and the number of the second layer 120 is (N-1) / 2.

[0022] The DBR layer 100 has a wavelength λb The total reflection efficiency of light increases with the increase of N. In order to balance the size and reflection efficiency of the micro-LED, the total thickness of the DBR layer 100 is preferably not greater than 2 μm.

[0023] In some embodiments, the material of the first layer 110 and the material of the second layer 120 are different materials having different refractive indices. For example, the material of the first layer 110 is SiO2, and the material of the second layer 120 is Si3N4.

[0024] In some embodiments, amorphous silicon (a-Si) is used in the DBR layer 100. For example, one of the material of the first layer 110 and the material of the second layer 120 is a-Si. In some embodiments, the material of the first layer 110 is SiO2, and the material of the second layer 120 is a-Si. In the case where the material of one of the first layer 110 and the second layer 120 is an a-Si material, the total thickness of the DBR layer 100 can be thinner, for example, less than 500nm. Since SiO2 can have a better bonding effect with other layers, in this case, the number N of the first layer 110 and the second layer 120 is an odd number. Therefore, the first layer 110 is bonded to the other layers of the micro LED as SiO2.

[0025] Figure 2 FIG. 2 shows a structural diagram of an exemplary micro LED 200 according to some embodiments of the present disclosure. Figure 2 As shown, in this embodiment, the micro LED 200 includes three light-emitting mesas 231, 232, and 233 disposed from bottom to top on the IC backplane 210. The first DBR layer 241 is disposed between the first light-emitting mesas 231 and the second light-emitting mesas 232. The second DBR layer 242 is disposed between the second light-emitting mesas 232 and the third light-emitting mesas 233. In this embodiment, the first light-emitting mesas 231 emits red light 262, the second light-emitting mesas 232 emits green light 264, and the third light-emitting mesas 233 emits blue light 266. Therefore, the first DBR layer 241 is configured to reflect the green light 264 emitted by the second light-emitting mesas 232 and the blue light 266 emitted by the third light-emitting mesas 233, and to allow the red light 262 emitted by the first light-emitting mesas 231 to pass. The second DBR layer 242 is configured to reflect the blue light 266 emitted by the third light emitting mesa 233 and pass the red light 262 and the green light 264 emitted by the first light emitting mesa 231 or the second light emitting mesa 232, respectively. With this structure, the light loss of the blue light 266 and the green light 262 is reduced, thereby improving the light emission efficiency of the micro LED 200. The structure of the first DBR layer 241 and the structure of the second DBR layer 242 are those described above, with reference to Figure 1 , and more details will be described below.

[0026] Figure 3is a table showing exemplary parameters of the first DBR layer 241 and the second DBR layer 242 according to some embodiments of the present disclosure. Figure 3 As shown, in this embodiment, based on the material of the first layer and the material of the second layer of the first DBR layer 241, the refractive index n1 of the first layer of the first DBR layer 241 is 1.45, and the refractive index n2 of the second layer of the first DBR layer 241 is 2.0. Since the first DBR layer 241 is configured to reflect the green light 264 (e.g., the corresponding wavelength is about 510nm to 540nm) emitted by the second light emitting mesa 232 and the blue light 266 (e.g., the corresponding wavelength is about 440nm to 470nm) emitted by the third light emitting mesa 233, the wavelength λ of the first DBR layer 241 is selected b In order to obtain a stop band B of 100 nm for the first DBR layer 241, the wavelength λ of the first DBR layer 241 is determined based on the above equation (3): b Then, according to equation (1) and equation (2), it can be obtained that the thickness d1 of the first layer of the first DBR layer 241 and the thickness d2 of the second layer of the first DBR layer 241 are 83 nm and 60 nm, respectively.

[0027] Likewise, based on the material of the first layer and the material of the second layer of the second DBR layer 242, the refractive index n1 of the first layer of the second DBR layer 242 is 1.45, and the refractive index n2 of the second layer of the second DBR layer 242 is 2.1. Since the second DBR layer 242 is configured to reflect the blue light 266 (e.g., corresponding to a wavelength of about 440 nm to 470 nm) emitted by the third light emitting mesa 243, the wavelength λ of the second DBR layer 242 is selected to be b In order to obtain a stop band B of 100 nm for the second DBR layer 242, the wavelength λ of the second DBR layer 242 can be determined based on the above equation (3): b Then, according to equation (1) and equation (2), the thickness d1 of the first layer of the second DBR layer 242 and the thickness d2 of the second layer of the second DBR layer 242 are 71 nm and 49 nm, respectively.

[0028] Figure 4 is a graph showing the relationship between the reflectivity of the first DBR layer 241 and the second DBR layer 242 and the wavelength of light according to some embodiments of the present disclosure. In this example, as the total number of layers of the first DBR layer 241 and the second DBR layer 242, N is equal to 15. Figure 4As shown, the X-axis represents the wavelength of light, and the Y-axis represents the reflectivity corresponding to the wavelength. Curves A and B respectively represent the relationship between the reflectivity and the wavelength of the first DBR layer 241 and the second DBR layer 242. When the reflectivity is 100%, the light with the corresponding wavelength can be fully reflected by the corresponding DBR layer, and when the reflectivity is 0, the light with the corresponding wavelength can pass through the corresponding DBR layer. Figure 4 , the stop band (e.g., the wavelength range corresponding to a reflectivity of about 100%) of the first DBR layer 241 is 100 nm, within the wavelength range of 430 nm to 530 nm. The reflectivity of wavelengths greater than 600 nm corresponding to red light is relatively low, for example, less than 30%. That is, the first DBR layer 241 can reflect most of the green light and blue light, and allow red light to pass. Similarly, the stop band of the second DBR layer 242 is 100 nm, within the wavelength range of 360 nm to 460 nm. The reflectivity of wavelengths greater than 500 nm corresponding to green light and red light is relatively low, for example, less than 35%. That is, the second DBR layer 242 can reflect most of the blue light, and allow red light and green light to pass.

[0029] Combination Figure 3 and Figure 4 In this embodiment, for N equal to 15, the total thickness of the first DBR layer 241 is 1084 nm, and the total thickness of the second DBR layer 242 is 911 nm.

[0030] Since the first DBR layer 241 and the second DBR layer 242 can improve the light emitting efficiency of the light emitting mesas 231 , 232 , and 233 , the same mesa size of each light emitting mesa can be achieved.

[0031] It can be understood that in some embodiments, the first light-emitting mesa emits red light, the second light-emitting mesa emits blue light, and the third light-emitting mesa emits green light. Therefore, the first DBR layer is configured to reflect the blue light emitted by the second light-emitting mesa and the green light emitted by the third light-emitting mesa, and to allow the red light emitted by the first light-emitting mesa to pass. The second DBR layer is configured to reflect the green light emitted by the third light-emitting mesa, and to allow the red light and blue light emitted by the first light-emitting mesa or the second light-emitting mesa to pass. Accordingly, the parameters of the first DBR layer and the second DBR layer can be calculated according to the wavelength of the corresponding light to be reflected according to equations (1) and (2).

[0032] Refer again Figure 2In some embodiments, the first light-emitting mesa 231 includes a first mesa structure 2311, a first passivation layer 2312 formed on the sidewall of the first mesa structure 2311, and a first top transparent layer 2313 formed on the surface of the first passivation layer 2312 and covering the upper surface of the first mesa structure 2311. The first mesa structure 2311 is configured to emit light. For example, the first mesa structure 2311 also includes a first semiconductor layer, a light-emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light-emitting layer. The first top transparent layer 2313 is electrically connected to the top surface of the first mesa structure 2311. In some embodiments, the first light-emitting mesa 231 also includes a first bottom transparent layer 2314 disposed at the bottom of the first mesa structure 2311. The first bottom transparent layer 2314 is used to bond with the IC backplane 210 through the bonding layer 220. In some embodiments, the first passivation layer 2312 is also disposed on the sidewalls of the bonding layer 220 and the first bottom transparent layer 2314.

[0033] The IC backplane 210 may include a set of three bottom pads for electrically connecting to each light-emitting mesa, respectively. For example, the first bottom pad 211 is electrically connected to the bonding layer 220 to further connect to the first light-emitting mesa 231. In some embodiments, a conductive structure (not shown) is further provided to selectively connect the bottom of the second light-emitting mesa 232 and the bottom of the third light-emitting mesa 233 to the second bottom pad (not shown) and the third bottom pad (not shown) of the IC backplane 210, respectively.

[0034] In some embodiments, the second light-emitting mesa 232 includes a second mesa structure 2321, a second passivation layer 2322 formed on the sidewall of the second mesa structure 2321, and a second top transparent layer 2323 formed on the surface of the second passivation layer 2322 and covering the upper surface of the second mesa structure 2321. The second mesa structure 2321 is configured to emit light. For example, the second mesa structure 2311 also includes a first semiconductor layer, a light-emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light-emitting layer. The second top transparent layer 2323 is electrically connected to the top surface of the second mesa structure 2321. In some embodiments, the second light-emitting mesa 232 also includes a second bottom transparent layer 2324 disposed at the bottom of the second mesa structure 2321. The second bottom transparent layer 2324 is used to electrically connect the bottom of the second mesa structure 2321 and the second bottom pad through a conductive structure.

[0035] The third light-emitting mesa 232 includes a third mesa structure 2331, a third passivation layer 2332 formed on the sidewall of the third mesa structure 2331, and a third top transparent layer 2333 formed on the surface of the third passivation layer 2332 and covering the upper surface of the third mesa structure 2331. The third mesa structure 2331 is configured to emit light. For example, the third mesa structure 2331 also includes a first semiconductor layer, a light-emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light-emitting layer. The third top transparent layer 2333 is electrically connected to the top surface of the third mesa structure 2331. In some embodiments, the third light-emitting mesa 233 also includes a third bottom transparent layer 2334 disposed at the bottom of the third mesa structure 2331. The third bottom transparent layer 2334 is used to electrically connect the bottom of the third mesa structure 2331 and the third bottom pad through a conductive structure.

[0036] In some embodiments, the first top transparent layer 2313, the first bottom transparent layer 2314, the second top transparent layer 2323, the second bottom transparent layer 2324, the third top transparent layer 2333, and the third bottom transparent layer 2334 are all TCO (transparent conductive oxide) films, such as ITO (indium tin oxide) films, AZO (antimony-doped zinc oxide) films, ATO (antimony-doped tin oxide) films, FTO (fluorine-doped tin oxide) films, etc.

[0037] In some embodiments, the micro LED 200 further includes a top conductive layer 250 formed on the third light emitting mesa 233. In some embodiments, the top conductive layer 250 is a TCO (transparent conductive oxide) film, such as an ITO (indium tin oxide) film, an AZO (antimony-doped zinc oxide) film, an ATO (antimony-doped tin oxide) film, an FTO (fluorine-doped tin oxide) film, and the like.

[0038] Figure 5 FIG. 5 shows a top view of a micro LED display panel 500 according to some embodiments of the present disclosure. Figure 5, the micro LED display panel 500 includes a micro LED array 510 and an IC (integrated circuit) backplane 520. The micro LED array 510 is located on the IC backplane 520 to form an image display area of ​​the micro LED display panel 500. The remaining area on the IC backplane 520 that is not covered by the micro LED array 510 is formed as a non-functional area. The IC backplane 520 is formed on the back side of the micro LED array 510 and partially extends outside the micro LED array 510, that is, partially not covered by the micro LED array 510. The micro LED array 510 includes a plurality of micro LEDs 511 arranged in an array. The IC backplane 520 is configured to control a plurality of micro LEDs 511. The IC backplane 520 may include a bottom pad array (not shown) corresponding to the micro LED array 510. The bottom pad array includes a plurality of groups of bottom pads (for example, including Figure 2 A group of three bottom pads of the bottom pad 211 in the plurality of bottom pads is provided, and a group of bottom pads corresponds to one micro LED 511. One micro LED among the plurality of micro LEDs is electrically connected to one bottom pad group among the plurality of groups of bottom pads.

[0039] In some embodiments, the top conductive layer of the micro-LED (e.g., Figure 2 The top conductive layer 250 in the micro LED array 510 is interconnected with each of the plurality of micro LEDs. That is, the top conductive layer is continuously formed on the top of the micro LED array 510 and is connected with each micro LED 511.

[0040] In some embodiments, IC backplate 520 also includes top connection pads 521. The top conductive layer is connected to top connection pads 521 and can also be connected to external circuits.

[0041] Each microLED (e.g., microLED 200) herein has a very small volume. MicroLEDs can be applied to microLED display panels. MicroLED display panels, for example, microLED display panel 500, have a very small light-emitting area, such as 1 mm×1 mm, 3 mm×5 mm, etc. In some embodiments, the light-emitting area is the area of ​​the microLED array in the microLED display panel. The microLED display panel includes one or more microLEDs that form a pixel array in which the microLEDs are pixels, such as a 1600×1200 pixel array, a 680×480 pixel array, or a 1920×1080 pixel array. The diameter of each microLED is in the range of about 200 nm to 2 μm. An IC backplane, such as an IC backplane 520, is formed on the back of the microLED array 510 and is electrically connected to the microLED array 510. The IC backplane 520 obtains signals, such as image data, from the outside via a signal line to control the corresponding microLED 511 to emit light or not.

[0042] Those skilled in the art will appreciate that the micro LED display panel is not limited to the above structure and may include components that are larger or fewer than those illustrated, or some components may be combined, or different components may be used.

[0043] It should be noted that relational terms such as "first" and "second" herein are used only to distinguish one entity or operation from another entity or operation, and do not require or imply any actual relationship or order between these entities or operations. In addition, the words "include", "have", "include" and "contain" and other similar forms are intended to be equivalent in meaning and are open-ended, and one or more items following any of these words are not intended to be an exhaustive list of such one or more items, or are not intended to be limited to the listed one or more items.

[0044] Unless otherwise specifically stated, the term "or" as used herein includes all possible combinations, except where not feasible. For example, if it is stated that a database may include A or B, then, unless otherwise specifically stated or not feasible, the database may include A, or B, or A and B. A second example is that if it is stated that a database may include A, B, or C, then, unless otherwise specifically stated or not feasible, the database may include A, or B, or C, or A and B, or A and C, or B and C, or A, B, and C.

[0045] In the foregoing description, embodiments have been described with reference to many specific details, which may vary depending on the implementation. Certain adjustments and modifications may be made to the described embodiments. In view of the description and practice of the invention disclosed herein, other embodiments may be apparent to those skilled in the art. It is intended that the description and embodiments are only to be regarded as exemplary, and the following claims indicate the true scope and spirit of the invention. It is also intended that the order of the steps shown in the figures is for illustrative purposes only and is not intended to be limited to any particular order of steps. Therefore, it will be appreciated by those skilled in the art that these steps may be performed in different orders when implementing the same method.

[0046] In the drawings and the specification, exemplary embodiments have been disclosed. However, many changes and modifications may be made to these embodiments. Therefore, although specific terms are used, they are used only in a general and descriptive sense and not for the purpose of limitation.

Claims

1. A micro LED, characterized in that: include: Two or more light-emitting tables arranged in a vertical direction from top to bottom; as well as At least one distributed Bragg reflection (DBR) layer is formed between adjacent light-emitting mesas and is configured to reflect light emitted by a light-emitting mesa disposed above the DBR layer among the adjacent light-emitting mesas and to allow light emitted by one or more light-emitting mesas disposed below the DBR layer to pass.

2. The micro LED according to claim 1, characterized in that: The DBR layer includes a plurality of first layers and a plurality of second layers, the plurality of first layers and the plurality of second layers are alternately layered, and a first refractive index of the plurality of first layers and a second refractive index of the plurality of second layers are different.

3. The micro LED according to claim 2, characterized in that: a first thickness of one of the plurality of first layers is determined based on the first refractive index and the wavelength; and A second thickness of one of the plurality of second layers is determined based on the second refractive index and the wavelength, wherein the wavelength is within a wavelength range to be reflected by the DBR layer.

4. The micro LED according to claim 3, characterized in that: The first thickness is The second thickness is obtained by get, Wherein d1 represents the first thickness, n1 represents the first refractive index, d2 represents the second thickness, n2 represents the second refractive index, λ b represents the wavelength.

5. The micro LED according to claim 4, characterized in that: The wavelength can be adjusted based on The stop band B of the DBR layer is obtained by the relationship of 6. The micro LED according to claim 5, characterized in that: The stop band is 100 nm.

7. The micro-LED according to any one of claims 2 to 6, characterized in that: One of the first material of the first layer and the second material of the second layer is amorphous silicon (a-Si).

8. The micro LED according to claim 7, characterized in that: The first material of the first layer is SiO 2 , and the second material of the second layer is a-Si.

9. The micro-LED according to any one of claims 2 to 6, characterized in that: The first material of the first layer and the second material of the second layer are SiO 2 and Si 3 N 4 respectively.

10. The micro-LED according to any one of claims 1 to 9, characterized in that: The two or more light-emitting mesas include: a first light emitting mesa configured to emit red light, a second light emitting mesa configured to emit green light and disposed above the first light emitting mesa; and a third light-emitting mesa configured to emit blue light and disposed above the second light-emitting mesa, Wherein, the at least one DBR layer comprises: a first DBR layer disposed between the first light emitting mesa and the second light emitting mesa and configured to pass red light and reflect green light and blue light; and The second DBR layer is disposed between the second light emitting mesa and the third light emitting mesa and is configured to reflect blue light and pass red light and green light.

11. The micro-LED according to any one of claims 1 to 9, characterized in that: The two or more light-emitting mesas include: a first light emitting mesa configured to emit red light, a second light emitting mesa configured to emit blue light and disposed above the first light emitting mesa; and a third light-emitting mesa configured to emit green light and disposed above the second light-emitting mesa, Wherein, the at least one DBR layer comprises: a first DBR layer disposed between the first light emitting mesa and the second light emitting mesa and configured to pass red light and reflect blue light and green light; and The second DBR layer is disposed between the second light emitting mesa and the third light emitting mesa and is configured to reflect green light and pass red light and blue light.

12. The micro LED according to claim 1, characterized in that: Each of the two or more light-emitting mesas comprises: A mesa structure for emitting light; forming a passivation layer on the sidewalls of the mesa structure; A top transparent layer is formed on the surface of the passivation layer and covers the top surface of the mesa structure, wherein the top transparent layer is electrically connected to the top of the mesa structure; and A bottom transparent layer is formed at the bottom of the mesa structure, and the bottom transparent layer is electrically connected to the bottom of the mesa structure.

13. A micro LED display panel, characterized in that: include: An integrated circuit (IC) backplane includes a bottom pad array, wherein the bottom pad array includes a plurality of bottom pads; as well as A micro LED array is formed on the IC backplane, wherein the micro LED array comprises a plurality of micro LEDs according to any one of claims 1 to 12, Among them, one micro LED among the plurality of micro LEDs is electrically connected to a group of bottom pads among the plurality of groups of bottom pads.

14. The micro LED display panel according to claim 13, characterized in that: The micro LED further includes a top conductive layer formed on the top of the micro LED, and the corresponding top conductive layers of a plurality of the micro LEDs are connected to each other.

15. The micro LED display panel according to claim 14, characterized in that: The IC backplane further includes a top connection pad, and the top conductive layer is connected to the top connection pad of the IC backplane.

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