Electrostatic chuck device and substrate processing apparatus including the same

Abstract

The electrostatic chuck apparatus of the present disclosure includes: a stage having a circular substrate attachment region (where DS is a diameter of the region) on an upper surface thereof, to which a circular substrate to be processed is electrostatically attached; the ESC electrode is embedded in the platform, the diameter DE1 of the ESC electrode is larger than the diameter DS of the substrate attachment area, and the ESC electrode and the center of the substrate attachment area are concentrically arranged in a plan view; wherein a substrate to be processed is electrostatically attached to an upper surface of the stage by a Johnson-Rahbeck force by applying a DC voltage to the ESC electrode, and the stage includes a high-resistance annular portion disposed in an outer portion outside the substrate attachment region in a plan view, the high-resistance ring portion is configured to suppress leakage of current from the outside to the plasma space when a DC voltage is applied.

Description

Technical Field

[0001] The present disclosure relates to an electrostatic chuck device and a substrate processing apparatus. Background Art

[0002] The electrostatic chuck that fixes the substrate to be processed by electrostatic attraction can hold the substrate to be processed flatly and is suitable for controlling the substrate temperature during plasma processing. Therefore, it is used to hold the substrate when performing plasma processing such as dry etching, sputtering, and plasma CVD.

[0003] In an electrostatic chuck, an internal electrode (ESC electrode) is embedded in a disc-shaped ceramic plate having approximately the same diameter as a substrate to be processed (e.g., a semiconductor wafer), and by applying a DC voltage to the internal electrode, the substrate to be processed is electrostatically attracted and fixed to the ceramic plate (see Japanese Patent Application Publication No. 2020-088195).

[0004] Electrostatic chucks include a type using Coulomb force and a type using Johnson-Rahbek force. In the type using Coulomb force, the main electrostatic attraction is the Coulomb force between different charges, which is generated by forming a capacitor with a dielectric material as a capacitor located between an internal electrode and a semiconductor wafer and inducing opposite charge polarity between the internal electrode and the semiconductor wafer. On the other hand, the main electrostatic attraction in the type using the Johnson-Rahbek type is the Johnson-Rahbek force (hereinafter, sometimes referred to as JR force), which is generated when a tiny current flowing through a dielectric material induces charged polarization in a small gap at the interface of the semiconductor wafer and the dielectric material, and positive and negative charges attract each other.

[0005] High temperature plasma treatment usually uses a Johansen-Rabec type electrostatic chuck, which has a strong electrostatic attraction.

[0006] In electrostatic chucks, it is important to reduce leakage current to obtain stable attraction and uniformity of plasma.

[0007] Japanese Patent Application Publication No. 2020-088195 proposes using an attraction electrode (ESC electrode) and an auxiliary electrode having a diameter smaller than that of a wafer to reduce leakage current.

[0008] In the configuration disclosed in Japanese Patent Application Publication No. 2020-088195, the distance from the surface of the platform (ceramic plate) to the attraction electrode and the distance from the surface of the platform to the auxiliary electrode are different from each other, resulting in a problem of poor plasma uniformity, especially near the edge of the wafer W. In addition, considering the manufacturing process, it is difficult to accurately manufacture the electrode due to deformation during sintering. In addition, although Japanese Patent Application Publication No. 2020-088195 only focuses on the resistance of the platform made of aluminum nitride (AlN), the problem of reduced clamping force due to increased leakage current at high temperatures is basically caused by the fact that the resistance of the platform becomes smaller than the contact resistance of the wafer. Therefore, it is difficult to achieve both leakage current reduction and plasma uniformity at the same time through this structure. Summary of the invention

[0009] This summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the example embodiments disclosed below. This summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0010] According to a first aspect of the present disclosure, there is provided an electrostatic chuck device for a plasma space, comprising: a platform having a circular substrate attachment area (wherein D S is the diameter of the area to which the circular substrate to be processed is electrostatically attached; and an ESC electrode embedded in the platform, whose diameter D E1 Greater than the diameter D of the substrate attachment area S , and is arranged concentrically with the center of the substrate attachment area in the plan view; wherein, by applying a DC voltage to the ESC electrode, the substrate to be processed is electrostatically attached to the substrate attachment area of ​​the platform by the Johansen-Rabech force, and the platform includes a high-resistance annular portion in the outer portion arranged outside the substrate attachment area in the plan view, and the high-resistance annular portion is configured to suppress current leakage from the outside to the plasma space when the DC voltage is applied.

[0011] A second aspect of the present disclosure is an electrostatic chuck apparatus according to the first aspect, wherein it includes a heater located below the ESC electrode in the platform.

[0012] A third aspect of the present disclosure is an electrostatic chuck device according to the first or second aspect, wherein the high resistance annular portion is made of a high resistance material having a higher volume resistivity than that of the platform portion between the substrate attachment area and the ESC electrode.

[0013] The fourth aspect of the present disclosure is an electrostatic chuck device according to any one of the first to third aspects, wherein the high-resistance material of the high-resistance annular portion includes a base material that is the same as the material of the portion other than the high-resistance annular portion, and the concentration of impurity elements in the high-resistance material of the high-resistance annular portion is different from the concentration of impurity elements in the material of the portion other than the high-resistance annular portion.

[0014] A fifth aspect of the present disclosure is the electrostatic chuck device according to any one of the first to fourth aspects, wherein the high resistance material of the high resistance annular portion is aluminum nitride.

[0015] A sixth aspect of the present disclosure is the electrostatic chuck device according to the first or second aspect, wherein the high resistance annular portion is an annular convex portion provided to surround the substrate to be processed and protrude upward from the substrate attachment area.

[0016] A seventh aspect of the present disclosure is an electrostatic chuck device according to the sixth aspect, wherein the annular protrusion portion is made of a high resistance material having a higher volume resistivity than that of a material of a platform portion between the substrate attachment area and the ESC electrode.

[0017] The eighth aspect of the present disclosure is an electrostatic chuck device according to the sixth or seventh aspect, wherein the high-resistance material of the annular protrusion portion includes the same base material as the material of the portion other than the annular protrusion portion, and the concentration of impurity elements in the high-resistance material of the annular protrusion portion is different from the concentration of impurity elements in the material of the portion other than the annular protrusion portion.

[0018] A ninth aspect of the present disclosure is the electrostatic chuck device according to the first or second aspect, wherein the high resistance annular portion is a separate annular member that is provided to surround a substrate to be processed.

[0019] A tenth aspect of the present disclosure is the electrostatic chuck device according to the ninth aspect, wherein the annular member includes a plurality of protrusions on a rear surface thereof.

[0020] An eleventh aspect of the present disclosure is an electrostatic chuck device according to the ninth or tenth aspect, wherein the annular member is made of a high resistance material having a higher volume resistivity than that of a material of a platform portion between the substrate attachment area and the ESC electrode.

[0021] A twelfth aspect of the present disclosure is the electrostatic chuck device according to the third aspect, wherein, as the high resistance annular portion, an annular member is separately provided on the high resistance annular portion made of a high resistance material so as to surround the substrate to be processed.

[0022] A thirteenth aspect of the present disclosure is the electrostatic chuck device according to the twelfth aspect, wherein the annular member includes a plurality of protrusions on a rear surface thereof.

[0023] A fourteenth aspect of the present disclosure is the electrostatic chuck device according to the twelfth or thirteenth aspect, wherein a material of the annular member is the same as a material of the high resistance annular portion made of a high resistance material.

[0024] According to a fifteenth aspect of the present disclosure, there is provided an electrostatic chuck device for a plasma space, comprising: a platform having a circular substrate attachment area (wherein D S is the diameter of the area), to which the circular substrate to be processed is electrostatically attached; the ESC electrode embedded in the platform has a diameter D E2 Less than or approximately equal to the diameter D of the substrate attachment area S , and is arranged concentrically with the center of the substrate attachment area in a plan view; and an RF electrode for plasma generation, which is embedded in the platform at the same depth as the ESC electrode and is located outside the substrate attachment area in a plan view; wherein, by applying a DC voltage to the ESC electrode, the substrate to be processed is electrostatically attached to the substrate attachment area of ​​the platform by the Johansen-Rabech force.

[0025] A sixteenth aspect of the present disclosure is an electrostatic chuck device according to the fifteenth aspect, wherein the RF electrode is grounded through a matching circuit including a capacitor and / or a coil so that the RF electrode and the ESC electrode have equal impedance.

[0026] According to a seventeenth aspect of the present disclosure, there is provided a substrate processing apparatus, comprising: a chamber; an electrostatic chuck device according to any one of the first to sixteenth aspects, disposed in the chamber; and a shower head disposed above the electrostatic chuck device.

[0027] According to an eighteenth aspect of the present disclosure, there is provided a substrate processing apparatus, comprising: a chamber; an electrostatic chuck device disposed in the chamber; a shower head disposed above the electrostatic chuck device; and a flow control ring having a shape surrounding the electrostatic chuck device, wherein the electrostatic chuck device comprises: a platform having a circular substrate attachment area (where D1 is the diameter of the area) on its upper surface, to which a circular substrate to be processed (where D0 is the diameter of the substrate) is electrostatically attached; and an ESC electrode embedded in the platform, whose diameter D E2 The flow control ring is smaller than or approximately equal to a diameter D1 of a substrate attachment area and is arranged concentrically with the center of the substrate attachment area in a plan view, and wherein the diameter D1 in the substrate attachment area is equal to a diameter D0 of a substrate to be processed within a range of ±5 mm, and the flow control ring is made of metal and serves as an RF electrode for plasma generation.

[0028] According to a nineteenth aspect of the present disclosure, there is provided a substrate processing apparatus, comprising: a chamber; an electrostatic chuck device disposed in the chamber; a shower head disposed above the electrostatic chuck device; and a flow control ring having a shape surrounding the electrostatic chuck device, wherein the electrostatic chuck device comprises: a platform having a circular substrate attachment area (where D1 is the diameter of the area) on its upper surface, to which a circular substrate to be processed (where D0 is the diameter of the substrate) is electrostatically attached; and an ESC electrode embedded in the platform, whose diameter D E2 The flow control ring is smaller than or approximately equal to a diameter D1 of a substrate attachment area and is arranged concentrically with a center of the substrate attachment area in a plan view, and wherein the diameter D1 in the substrate attachment area is equal to a diameter D0 of a substrate to be processed within a range of ±5 mm, and the flow control ring is made of ceramic, and an RF electrode for plasma generation is embedded in the flow control ring. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the size of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure.

[0030] Figure 1A is a schematic cross-sectional view of the electrostatic chuck device according to the first embodiment, and shows a state in which a substrate W to be processed is placed.

[0031] Figure 1B 2 is a schematic cross-sectional view of the electrostatic chuck device according to the first embodiment, and shows a state in which a substrate W to be processed is not placed.

[0032] Figure 2 This is a conceptual diagram explaining leakage current.

[0033] Figure 3 is a schematic cross-sectional view of an electrostatic chuck device according to a modified example of the first embodiment.

[0034] Figure 4A is a schematic cross-sectional view of an electrostatic chuck device according to a second embodiment.

[0035] Figure 4B is a schematic cross-sectional view of an electrostatic chuck device according to a modified example of the second embodiment.

[0036] Figure 5A is a schematic cross-sectional view of an electrostatic chuck device according to a third embodiment.

[0037] Figure 5B is a schematic cross-sectional view of an electrostatic chuck device according to a modified example of the third embodiment.

[0038] Fig. 6Ais a schematic cross-sectional view of an electrostatic chuck device according to another modified example of the third embodiment.

[0039] Figure 6B is a schematic cross-sectional view of an electrostatic chuck device according to another modified example of the third embodiment.

[0040] Figure 7 is a schematic cross-sectional view of an example of a substrate processing apparatus of the present disclosure equipped with the above-described electrostatic chuck device.

[0041] Figure 8 It is a simple expression Figure 7 A diagram of a configuration is provided to explain operations during substrate processing in an easily understandable manner.

[0042] Fig. 9A is a schematic cross-sectional view of an electrostatic chuck device according to a fourth embodiment.

[0043] Fig. 9B is a schematic cross-sectional view of an electrostatic chuck device according to a modified example of the fourth embodiment.

[0044] Fig. 10A yes Figure 7 A schematic cross-sectional view of a portion of a modified example of a substrate processing apparatus is shown.

[0045] Fig. 10B yes Fig. 10A A schematic cross-sectional view of a modified example of the substrate processing apparatus shown. DETAILED DESCRIPTION

[0046] Although certain embodiments and examples are disclosed below, those skilled in the art will appreciate that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention and their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited by the specifically disclosed embodiments described below.

[0047] As used herein, the term "substrate" may refer to any one or more underlying materials, including any one or more underlying materials that may be modified or on which a device, circuit, or film may be formed. A "substrate" may be continuous or non-continuous; rigid or flexible; solid or porous; and combinations thereof. A substrate may be in any form, such as a powder, a plate, or a workpiece. A plate-like substrate may include wafers of various shapes and sizes. A substrate may be made of semiconductor materials, including, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0048] For example, a substrate in powder form can be used in drug manufacturing. The porous substrate can include a polymer. Examples of workpieces can include medical devices (such as stents and syringes), jewelry, tool equipment, components for battery manufacturing (such as anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0049] The continuous substrate may extend beyond the boundaries of the processing chamber in which the deposition process occurs. In some processes, the continuous substrate may be moved through the processing chamber so that the process continues until the end of the substrate is reached. The continuous substrate may be provided from a continuous substrate feed system to allow the continuous substrate to be manufactured and output in any suitable form.

[0050] Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, meshes, flexible materials, bundles of continuous filaments or fibers (eg, ceramic fibers or polymer fibers). A continuous substrate may also include a carrier or sheet on which a discontinuous substrate is mounted.

[0051] The illustrations presented herein are not meant to be actual views of any particular material, structure, or device but are merely idealized representations used to describe embodiments of the present disclosure.

[0052] The specific embodiments shown and described are illustrations of the present invention and its best mode and are not intended to limit the scope of these aspects and embodiments in any way. In fact, for the sake of brevity, the traditional manufacturing, connection, preparation and other functional aspects of the system may not be described in detail. In addition, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems, and / or may not exist in some embodiments.

[0053] It should be understood that the configuration and / or method described herein are exemplary in nature, and these specific embodiments or examples should not be considered restrictive, because many variations are possible. The specific routine or method described herein can represent one or more of any number of processing strategies. Therefore, the various actions shown can be performed in the order shown, in other orders, or omitted in some cases.

[0054] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts and / or properties disclosed herein, and any and all equivalents thereof.

[0055] Figure 1A and 1B is a schematic cross-sectional view of an electrostatic chuck device according to a first embodiment. Figure 1A FIG. 4 shows a state where a substrate W to be processed is placed. Figure 1BA state in which no substrate W to be processed is placed is shown.

[0056] Figure 1A and 1B The electrostatic chuck device 100 shown is an electrostatic chuck device used in a plasma space. The electrostatic chuck device 100 includes a platform 50 and an ESC electrode 30. The platform 50 has a circular substrate attachment area 50A (where D S The circular substrate W to be processed is electrostatically attached to the region, and the ESC electrode 30 is embedded in the platform 50, and its diameter D E1 Greater than the diameter D of the substrate attachment area 50A S , and is arranged concentrically with the center O of the substrate attachment region 50A in a plan view. By applying a DC voltage to the ESC electrode 30, the substrate W to be processed is electrostatically attached to the upper surface 50a of the platform 50 by the Johansen-Rabec force. The platform 50 has a high-resistance annular portion 51B in an annular peripheral region 50B arranged adjacent to the outside of the substrate adsorption region 50A in a plan view, which suppresses leakage from the annular peripheral region 50B to the plasma space P when a DC voltage is applied (see Figure 2 ) leakage current.

[0057] Reference numeral 51C denotes a lower portion of the high resistance annular portion 51B and a lower portion of the ESC electrode 30 in the platform 50 .

[0058] The platform 50 is made of a dielectric material, for example, a ceramic material, such as aluminum nitride (AlN), aluminum oxide, silicon carbide (SiC), boron nitride (BN), etc. The ESC electrode 30 is made of, for example, a high melting point metal, such as tungsten, tantalum, molybdenum, niobium, ruthenium, hafnium, etc. The shape of the ESC electrode 30 is, for example, a plate, a wire mesh, or a stamped metal.

[0059] Hereinafter, the description will not be repeated because the materials and shapes of the platform and the ESC electrodes are similar in the following other embodiments.

[0060] Figure 2 This is a conceptual diagram explaining leakage current.

[0061] exist Figure 2 In the embodiment, when a DC voltage is applied to the ESC electrode 30 to generate the JR force, an undesirable current flows through the plasma space from the annular peripheral region 50B where there is no wafer W. The undesirable current is Figure 2 The leakage current I Leak When a DC voltage is applied to the ESC electrode 30 to generate the JR force, the resistance R between the ESC electrode 30 and the circular substrate attachment area 50A is in , the resistance R between the ESC electrode 30 and the annular outer peripheral area 50B outand DC voltage, generating Figure 2 The small current I J-R .

[0062] As mentioned above, when the small current I J-R When charge polarization is induced at a small gap in the interface IF between the semiconductor wafer W and the dielectric material 50, a JR force is generated, and positive and negative charges thereof attract.

[0063] Leakage Current I Leak The leakage current I is the current flowing from the annular outer peripheral region 50B through the plasma space P. The wafer W is not located in the annular outer peripheral region 50B. Leak Not only does it not contribute to the JR force, but also the uniformity of the plasma near the annular outer peripheral region 50B, that is, near the edge of the wafer W is impaired.

[0064] The electrostatic chuck device of the present disclosure includes a high resistance annular portion and is designed to be in Adding resistor R out To reduce the leakage current I Leak , thereby improving the uniformity of the plasma near the edge of the wafer W. In addition, considering the uniformity of the plasma, the diameter D of the ESC electrode E1 For the diameter D0 of the wafer W (substantially equal to the diameter D S ) should be large enough. For example, D E1 Than D S 10mm larger.

[0065] exist Figure 1A and 1B In the illustrated electrostatic chuck device, the high resistance annular portion 51B is composed of a high resistivity material having a higher volume resistivity than the volume resistivity of the platform material in the portion (wafer contact portion) 51A between the circular substrate attachment area 50A and the ESC electrode 30.

[0066] Resistor R out It is preferably greater than 10 times the resistance Rin (i.e. R out >10R in ). It is preferable that each material is selected so that the volume resistivity ρ of the high resistance material constituting the high resistance annular portion (the portion not in contact with the wafer) 51B is B [Ω.cm] and the volume resistivity ρ of the low resistance material constituting the wafer contact portion 51A A [Ω.cm] satisfies R out >10R in .

[0067] also, Figure 1A and 1BThe electrostatic chuck device shown is a case where the lower portion 51C located below the high resistance annular portion 51B and below the ESC electrode 30 is also made of the same material as the low resistance material of the wafer contact portion 51A.

[0068] The resistance of the high resistance annular portion 51B is determined by the following formula (1).

[0069] [Formula 1]

[0070]

[0071] Here, R, ρ, l and S in formula (1) are the resistance, volume resistivity (resistivity), thickness and area of ​​the high resistance annular portion 51B, respectively.

[0072] The electrostatic chuck device according to the first embodiment adopts a configuration in which the material of the high resistance annular portion 51B is a material having a high volume resistivity p to increase the resistance of the high resistance annular portion 51B and reduce the leakage current.

[0073] exist Figure 1A and 1B In the illustrated electrostatic chuck device, high resistance annular portion 51B is arranged to fill the space between top surface 50a and ESC electrode 30, but it may be arranged to fill a portion of the space between top surface 50a and ESC electrode 30, or extend to a portion of wafer contact portion 51A.

[0074] In addition, Figure 1A and 1B In the illustrated electrostatic chuck device, the platform 50 is made of a material having the same volume resistivity except for the high resistance annular portion 51B, but is not limited thereto. For example, the portion below the ESC electrode 30 may be made of a material having a different volume resistivity than the wafer contact portion 51A.

[0075] exist Figure 1A and 1B In the electrostatic chuck device shown, the heater (see Figure 7 28) may be disposed below the ESC electrode 30 in the platform 50, such as Figure 7 shown.

[0076] Figure 3 The electrostatic chuck device 101 of the modified example shown is a configuration including a platform 50-1 in which a high resistance annular portion 51-1B and a portion 51-1C below the ESC electrode 30 are made of the same material as the high resistance material of the high resistance annular portion 51-1B. Figure 1A and 1B Reference numerals are used in the description to describe the same components as those described above.

[0077] Figure 3 The electrostatic chuck device 101 shown includes: a platform 50-1 having a circular substrate attachment area 50-1A (where D S is the diameter of the area), the circular substrate W to be processed is electrostatically attached to the area; and the ESC electrode 30 embedded in the platform 50-1, whose diameter D E1 Greater than the diameter D of the substrate attachment area 50-1A S , and is arranged concentrically with the center O of the substrate attachment region 50-1A in a plan view. The substrate W to be processed is electrostatically attached to the upper surface 50a of the platform 50-1 by the Johansen-Rabec force by applying a DC voltage to the ESC electrode 30. The platform 50-1 has a high-resistance annular portion 51-1B in an annular peripheral region 50-1B arranged adjacent to the outside of the substrate adsorption region 50-1A in a plan view, which suppresses leakage current leaking from the annular peripheral region 50-1B to the plasma space P when a DC voltage is applied.

[0078] constitute Figure 1B The high resistance annular portion 51B or Figure 3 The high resistance material of the high resistance annular portion 51-1B shown is the same base material as the portion other than the high resistance annular portion, but the composition may be different in the concentration of the impurity element. Here, the base material refers to the main material. In this configuration, since the difference in thermal expansion coefficient between the high resistance material and the low resistance material is small, even when the platform 50 is repeatedly heated and cooled, peeling between the high resistance material portion and the low resistance material portion is unlikely.

[0079] Examples of such a material include aluminum nitride. By changing the content of impurity elements contained in aluminum nitride, it can be used as a high resistance material and a low resistance material.

[0080] exist Figure 3 In the electrostatic chuck device shown, the heater (see Figure 7 28 in the figure) can be set below the ESC electrode 30 in the platform 50-1.

[0081] The above-mentioned platform can be manufactured as a whole by known methods such as sintering.

[0082] Figure 4A is a schematic cross-sectional view of an electrostatic chuck device according to a second embodiment.

[0083] Figure 4A The electrostatic chuck device 102 shown is an electrostatic chuck device used in a plasma space. The electrostatic chuck device 102 includes a platform 50-2 and an ESC electrode 30. The platform 50-2 has a circular substrate attachment area 50-2A (where DS The circular substrate W to be processed is electrostatically attached to the region, and the ESC electrode 30 is embedded in the platform 50-2, and its diameter D E1 Greater than the diameter D of the substrate attachment area 50-2A S , and is arranged concentrically with the center O of the substrate attachment region 50-2A in plan view. By applying a DC voltage to the ESC electrode 30, the substrate W to be processed is electrostatically attached to the upper surface 50a of the platform 50-2 by the Johansen-Rabec force. The platform 50-2 has a high-resistance annular portion 51-2B in an annular peripheral region 50-2B arranged adjacent to the outside of the substrate adsorption region 50-2A in plan view, which suppresses leakage from the annular peripheral region 50-2B to the plasma space P when a DC voltage is applied (see Figure 2 ) leakage current.

[0084] The high resistance annular portion 51 - 2B is arranged to surround the substrate W to be processed, and is an annular convex portion protruding upward from the substrate attachment region 50 - 2A.

[0085] The electrostatic chuck device according to the second embodiment adopts a configuration in which the thickness l of the high resistance annular portion 51 - 2B included in the above formula (1) is thicker to increase the resistance and reduce the leakage current.

[0086] The resistance R between the ESC electrode 30 and the substrate attachment area 50-2A in , the resistance R of the annular raised portion 51-2B out , the annular raised portion 51-2B is a high resistance annular portion, and is preferably greater than the resistance R in 10 times (i.e. R out >10R in ).

[0087] The annular raised portion 51-2B as the high resistance annular portion is preferably made of a high resistance material having a higher volume resistivity than the volume resistivity of the terrace material in the portion (wafer contact portion) 51-2A between the substrate attachment region 50-2A and the ESC electrode 30. This is because, in addition to the thickness in the formula (1), as in the first embodiment, the resistance of the annular raised portion 51-2B can be made larger by the influence of the large volume resistivity.

[0088] The thickness (H1+d1) of the annular raised portion 51-2B may be set to satisfy R out >10R in H1 is the thickness (height) protruding upward from the substrate attachment region 50 - 2A, and d1 is the thickness from the substrate attachment region 50 - 2A to the top surface of the ESC electrode 30 .

[0089] As an example of the thickness d1, it may be about several mm. More specifically, it may be about 1 mm to 2 mm.

[0090] As in the first embodiment, the high resistance material constituting the annular convex portion 51-2B is the same base material as the portion other than the high resistance annular portion, but the composition may be different in the concentration of the impurity element. In this configuration, since the difference in thermal expansion coefficient between the high resistance material and the low resistance material is small, even when the stage 50-2 is repeatedly heated and cooled, peeling between the annular convex portion 51-2B as the high resistance material portion and the low resistance material portion is unlikely.

[0091] Examples of such a material include aluminum nitride. By changing the content of impurity elements contained in aluminum nitride, it can be used as a high resistance material and a low resistance material.

[0092] exist Figure 4A In the illustrated electrostatic chuck device, the lower portion 51-2C located below the annular raised portion 51-2B and below the ESC electrode 30 is also made of the same low-resistance material as the wafer contact portion 51-2A.

[0093] exist Figure 4A In the electrostatic chuck device shown, the heater (see Figure 7 28 in the figure) can be set below the ESC electrode 30 in the platform 50-2.

[0094] The above-mentioned platform can be manufactured as a whole by known methods such as sintering.

[0095] Figure 4B A modified example of the electrostatic chuck device according to the second embodiment is shown.

[0096] Figure 4B The electrostatic chuck device 103 of the modified example shown is Figure 4A The difference of the electrostatic chuck device 102 shown is that the tapered portion 51-3Ba is formed on the wafer W side of the annular raised portion 51-3B. Having a tapered structure can reduce the concentration of plasma due to the edge effect. It is preferable to have a tapered portion on the opposite side of the wafer W to prevent abnormal discharge.

[0097] For the same purpose, a structure having a circular structure may be used instead of a conical structure.

[0098] Figure 4B The electrostatic chuck device 103 as a modified example shown in FIG. 1 includes a platform 50 - 3 having a circular substrate attachment area 50 - 3A (where D Sis the diameter of the area), the circular substrate W to be processed is electrostatically attached to the area, and the ESC electrode 30 embedded in the platform 50-3, whose diameter D E1 Greater than the diameter D of the substrate attachment area 50-3A S , and is arranged concentrically with the center O of the substrate attachment region 50-3A in a plan view. The substrate W to be processed is electrostatically attached to the upper surface 50a of the platform 50-3 by the Johansen-Rabech force by applying a DC voltage to the ESC electrode 30. The platform 50-3 has an annular convex portion 51-3B as a high resistance annular portion in an annular peripheral region 50-3B arranged adjacent to the outside of the substrate adsorption region 50-3A in a plan view, which suppresses leakage current leaking from the annular peripheral region 50-3B to the plasma space P when a DC voltage is applied.

[0099] The annular raised portion 51-3B as the high resistance annular portion is preferably made of a high resistance material having a higher volume resistivity than the volume resistivity of the terrace material in the portion (wafer contact portion) 51-3A between the substrate attachment region 50-3A and the ESC electrode 30. This is because, in addition to the thickness in the formula (1), as in the first embodiment, the resistance of the annular raised portion 51-3B can be made larger by the influence of the large volume resistivity.

[0100] exist Figure 4B In the illustrated electrostatic chuck device, the lower portion 51-3C located below the annular raised portion 51-3B and below the ESC electrode 30 is also made of the same low-resistance material as the wafer contact portion 51-3A.

[0101] exist Figure 4B In the electrostatic chuck device shown, the heater (see Figure 7 28 in the figure) can be set below the ESC electrode 30 in the platform 50-3.

[0102] Figure 5A is a schematic cross-sectional view of an electrostatic chuck device according to a third embodiment.

[0103] Figure 5A The electrostatic chuck device 104 shown is an electrostatic chuck device used in a plasma space. The electrostatic chuck device 104 includes a platform 50-4 and an ESC electrode 30. The platform 50-4 has a circular substrate attachment area 50-4A (where D S is the diameter of the area), the circular substrate W to be processed is electrostatically attached to the area, and the ESC electrode 30 is embedded in the stage 50-4, and its diameter D E1 Greater than the diameter D of the substrate attachment area 50-4A S, and is arranged concentrically with the center O of the substrate attachment region 50-4A in plan view. By applying a DC voltage to the ESC electrode 30, the substrate W to be processed is electrostatically attached to the upper surface 50a of the platform 50-4 by the Johansen-Rabec force. The platform 50-4 has a high-resistance annular portion 51-4B in an annular peripheral region 50-4B arranged adjacent to the outer side of the substrate adsorption region 50-4A in plan view, which suppresses leakage from the annular peripheral region 50-4B to the plasma space P when a DC voltage is applied (see Figure 2 ) leakage current.

[0104] The high resistance annular portion 51 - 4B is a separate annular member which is arranged to surround the substrate W to be processed.

[0105] The electrostatic chuck device according to the third embodiment includes a separate annular member as the high-resistance annular portion 51 - 4B.

[0106] As described above, also in the electrostatic chuck device according to the third embodiment, the separate annular member 51-4B is a high resistance annular portion, and when a DC voltage is applied to the ESC electrode 30 to generate a JR force, a minute current I J-R Compared with the above-mentioned embodiment in which the high resistance annular portion is integrated, in the electrostatic chuck device according to the third embodiment, the leakage current I Leak The suppression effect is further improved, thereby further improving the uniformity of the plasma near the edge of the wafer W.

[0107] The electrostatic chuck device according to the third embodiment includes a separate annular member 51-4B as a high-resistance annular portion, and is designed to reduce the leakage current I Leak , thereby improving the uniformity of the plasma near the edge of the wafer W.

[0108] The material of the annular member 51-4B preferably has plasma resistance and high resistance, and can be the same material as the platform 50-4. For example, it can be aluminum nitride (AlN). In order to increase the resistance, the rear surface of the annular member 51-4B in contact with the platform 50-4 can be configured with multiple protrusions to reduce the contact area. For example, embossing can be applied. The construction with multiple protrusions on the rear surface of the annular member 51-4B corresponds to the effect of reducing the area S in formula (1).

[0109] Furthermore, the ring member 51 - 4B is preferably made of a material having a small dielectric constant or thermal conductivity as a material whose temperature does not easily rise.

[0110] The annular raised portion 51-4B as the high resistance annular portion is preferably made of a high resistance material having a higher volume resistivity than that of the terrace material in the portion (wafer contact portion) 51-4A between the substrate attachment region 50-4A and the ESC electrode 30.

[0111] exist Figure 5A In the electrostatic chuck device shown, the heater (see Figure 7 28) may be disposed below the ESC electrode 30 in the platform 50-4.

[0112] Figure 5B is a schematic cross-sectional view of an electrostatic chuck device having a platform 50-5, wherein an annular member 51-4B is mounted on Figure 1A and 1B On the platform 50 shown.

[0113] Figure 5B The electrostatic chuck device 105 shown is an electrostatic chuck device used in a plasma space. The platform 50-5 in the electrostatic chuck device 105 has a Figure 1A and 1B The electrostatic chuck device 105 includes a platform 50-5 and an ESC electrode 30. The platform 50-5 has a circular substrate attachment area 50A on its upper surface 50a (where D S is the diameter of the area), the circular substrate W to be processed is electrostatically attached to the area, and the ESC electrode 30 is embedded in the platform 50, whose diameter D E1 Greater than the diameter D of the substrate attachment area 50A S , and is arranged concentrically with the center O of the substrate attachment area 50A in a plan view. The substrate W to be processed is electrostatically attached to the upper surface 50a of the platform 50-5 by the Johansen-Rabec force by applying a DC voltage to the ESC electrode 30. The platform 50-5 has an annular member 51-4B in an annular peripheral area 50B arranged adjacent to the outside of the substrate adsorption area 50A in a plan view.

[0114] Figure 5B The electrostatic chuck device 105 shown includes Figure 1A and 1B The characteristics of the electrostatic chuck device 100 shown and Figure 5A Characteristics of the electrostatic chuck device 104 are shown.

[0115] The material of the annular member 51 - 4B may be the same as that of the high resistance annular portion 51B.

[0116] exist Figure 5B In the electrostatic chuck device shown, the heater (see Figure 728 ) may be disposed below the ESC electrode 30 in the platform 50 .

[0117] Fig. 6A and 6B The electrostatic chuck devices 106 and 107 shown in FIG. 1 correspond to Figure 5A and 5B The electrostatic chuck devices 104 and 105 shown in FIG. 1 are configured with an annular member 51 - 5B covering the side surface of the platform 50 .

[0118] In the case where the plasma extends to the side of the platform 50 , the ring member 51 - 5B is preferably configured to cover the side of the platform 50 to reduce leakage current from the side of the platform 50 .

[0119] exist Fig. 6A and 6B In the electrostatic chuck device shown, the heater (see Figure 7 28 in the figure) can be set below the ESC electrode 30 in the platform 50-6 or the platform 50-7.

[0120] Figure 7 is a schematic cross-sectional view showing an example of a substrate processing apparatus equipped with the above-described electrostatic chuck device. Figure 7 Shown is equipped with Figure 1A and 1B An electrostatic chuck device 100 is shown as an example of a substrate processing apparatus of an electrostatic chuck device.

[0121] Figure 7 The substrate processing apparatus 1000 shown includes a chamber 12. The chamber 12 is provided with a stage 50 of the present disclosure and an upper electrode (shower head) 16 located opposite the stage 50. The upper electrode 16 is provided with a plurality of slits 16a. A material gas is supplied between the stage 50 and the upper electrode 16 through each slit 16a.

[0122] The exhaust pipe 20 is fixed to the chamber 12 and the upper electrode 16 via an O-ring. The exhaust pipe 20 surrounds the space between the upper electrode 16 and the stage 50. Gas supplied between the upper electrode 16 and the stage 50 and used for substrate processing is exhausted to the outside of the chamber 12 through the exhaust pipe 20.

[0123] A flow control ring (FCR) 31 is provided to guide the gas from the processing space 17 to the annular channel 20b. For example, the FCR 31 is positioned on the chamber 12, and an O-ring is placed therebetween. The FCR 31 and the exhaust pipe 20 provide a slit 20a, and the gas supplied into the processing space 17 is guided into the annular channel 20b through the slit 20a.

[0124] The first AC power source 22 and the second AC power source 24 are connected to the upper electrode 16. The first AC power source 22 supplies AC power of a first frequency. The second AC power source 24 supplies AC power of a second frequency lower than the first frequency. The first frequency can be in the range of, for example, 1 to 30 MHz. This frequency band is called HRF (high radio frequency). The first AC power source 22 provides AC power of, for example, 13.56 MHz. The second frequency can be in the range of 100 kHz to 1000 kHz. This frequency band is called low radio frequency (LRF). The second AC power source 24 provides AC power of, for example, 430 kHz.

[0125] The platform 50 is supported by the support 26. The platform 50 and the support 26 are integrated into a base. The heater 28 is embedded in the platform 50. The heater 28 is provided in a spiral form in a plan view, for example. The heater 28 is connected to a power source 29 by an electric wire passing through the support 26. The power source 29 supplies current to the heater 28, and the heater 28 heats the platform 50 and also heats the substrate on the platform 50.

[0126] exist Figure 7 In the example shown, the heater 28 is built into the platform 50 , but is not limited to this configuration and may be placed outside the platform 50 to heat the wafer W.

[0127] The ESC electrode 30 is disposed in the platform 50. The ESC electrode 30 is connected to the filter circuit 32 through wires passing through the support 26. The ESC electrode 30 and the DC power supply 34 are connected through the filter circuit 32. The DC power supply 34 applies a voltage to the ESC electrode 30 to provide an electrostatic chuck.

[0128] The filter circuit 32 includes a capacitor connecting the ESC electrode 30 and the ground. The capacitor is mainly used to pass the AC power of the first frequency supplied by the first AC power source 22.

[0129] The filter circuit 32 includes a coil and a capacitor. The wire connecting the ESC electrode 30 and the capacitor is grounded via the coil and the capacitor. The series circuit of the coil and the capacitor grounds the ESC electrode 30. The capacitor and the coil are mainly used to transfer the second frequency AC power supplied by the second AC power source 24.

[0130] The operation of a substrate handling apparatus during substrate processing is described. Figure 8 It is a simple expression Figure 7, so as to explain the operation during substrate processing in an easily understandable manner. Substrate processing is started in a state where a substrate W to be processed is placed on a platform 50. The substrate W to be processed is, for example, a Si wafer. The substrate W to be processed is heated to a predetermined temperature by a heater 28. When a material gas is supplied between the upper electrode 16 and the platform 50, the first AC power supply 24 supplies AC power of a first frequency to the upper electrode 16. Thus, plasma P is generated between the upper electrode 16 and the platform 50. In this state, when an ESC voltage is applied to the ESC electrode 30 by a DC power supply 34, an ESC (DC) current flows through the plasma between the electrodes, and a Johnson-Rabec force is generated by the charged polarization induced at the interface gap between the substrate W to be processed and the platform 50, and the substrate W to be processed is electrostatically attached to the platform 50. Therefore, electrostatic clamping can be performed. In the substrate processing apparatus 1000 shown in the figure, since there is one ESC electrode 30, an electrostatic chuck can be provided only when plasma is generated.

[0131] if Figure 7 The process of the substrate processing apparatus 1000 shown involves plasma processing, which is not particularly limited. For example, the substrate processing apparatus 1000 can be used as a plasma excited atomic layer deposition apparatus (PEALD apparatus) or a plasma excited chemical vapor deposition apparatus (PECVD apparatus).

[0132] Fig. 9A and 9B 1 is a schematic cross-sectional view of an electrostatic chuck device according to a fourth embodiment. The same components as those described above are described using the reference numerals used in the above drawings.

[0133] Fig. 9A The electrostatic chuck device 108 shown is an electrostatic chuck device used in a plasma space. The electrostatic chuck device 108 includes: a platform 50-8 having a circular substrate attachment area 50-8A (where D S is the diameter of the area), the circular substrate W to be processed is electrostatically attached to the area; the ESC electrode 30 embedded in the platform 50-8, its diameter D E2 Less than or approximately equal to the diameter D of the substrate attachment area 50-8A S , and is arranged concentrically with the center O of the substrate attachment area 50-8A in a plan view; and an RF electrode 40 for plasma generation, which is embedded in the platform 50-8 at the same depth as the ESC electrode 30, and is located in the outer portion 50-8B arranged outside the substrate attachment area 50-8A in a plan view. By applying a DC voltage to the ESC electrode 30, the substrate W to be processed is electrostatically attached to the upper surface 50a of the platform 50-8 by the Johansen-Rabech force.

[0134] The electrostatic chuck device according to the fourth embodiment is a configuration in which an electrode of, for example, a capacitively coupled plasma is also used as an RF electrode. When the ESC electrode is made smaller, no current flows to the peripheral portion of the wafer. However, since the RF electrode is determined by the size of the ESC electrode, the plasma size also becomes smaller, and the uniformity of the plasma relative to the wafer also deteriorates. Therefore, the RF electrode is embedded in the platform so as to be grounded relative to the ESC electrode. As the ESC electrode, the size can be reduced to reduce the current at the peripheral portion, but this deteriorates the uniformity of the plasma, and in order to compensate for this, the RF electrode is embedded in the platform.

[0135] like Fig. 9B As shown, no ESC voltage is applied to the RF electrode 40, and the capacitor and coil are connected so that the impedance seen from ground or the ESC electrode 30 and the RF electrode 40 are equal.

[0136] In the electrostatic chuck device 108, no ESC voltage is applied to the RF electrode 40, so no leakage current is generated. Therefore, the uniformity of the plasma near the edge of the wafer W is maintained.

[0137] Fig. 9A and 9B The electrostatic chuck device shown can be used to Figure 7 The substrate processing equipment shown.

[0138] Fig. 10A and 10B 2 is a schematic cross-sectional view of a portion of a substrate processing apparatus in the vicinity of an electrostatic chuck unit. The same components as those described above are described using the reference numerals used in the above-described drawings.

[0139] Fig. 10A The substrate processing apparatus 1001 shown includes an electrostatic chuck device used in a plasma space. The electrostatic chuck device includes: a platform 50-9 having a circular substrate attachment area (where D1 is the diameter of the area) on its upper surface, to which a circular substrate W to be processed (where D0 is the diameter) is electrostatically attached; and an ESC electrode 30 embedded in the platform 50-9, whose diameter D E2 It is smaller than or approximately equal to the diameter D1 of the substrate attachment area and is arranged concentrically with the center O of the substrate attachment area in a plan view. The diameter D1 in the circular substrate attachment area (upper surface) is equal to the diameter D0 of the substrate W to be processed within a range of ±5 mm.

[0140] In the substrate processing apparatus 1001, the flow control ring 31 (see Figure 8 ) is made of metal and serves as RF electrode for plasma generation.

[0141] Fig. 9A and9B The RF electrodes shown in FIG. are built into the platform. Fig. 10A and 10B In the configuration shown, the platform itself is made to be almost the same size as the wafer, and separately, in a substrate processing apparatus equipped with a flow control ring (FCR), the flow control ring is installed in the same manner as the above-mentioned annular member to control the diffusion of the plasma. The flow control ring can be made of metal ( Fig. 10A ) or ceramic ( Fig. 10B If it is made of ceramic, the RF electrodes are embedded in the flow control ring to achieve Fig. 9A and 9B The same effect is achieved in .

[0142] In the substrate processing unit 1001, the flow control ring 31 is used as an RF electrode. No ESC voltage is applied, so no leakage current is generated. Therefore, the uniformity of the plasma near the edge of the wafer W is maintained.

[0143] Fig. 10B The substrate processing apparatus 1002 shown includes an electrostatic chuck device used in a plasma space. The electrostatic chuck device includes: a platform 50-9 having a circular substrate attachment area (where D1 is the diameter of the area) on its upper surface, to which a circular substrate W to be processed (where D0 is the diameter) is electrostatically attached; and an ESC electrode 30 embedded in the platform 50-9, whose diameter D E2 It is smaller than or approximately equal to the diameter D1 of the substrate attachment area and is arranged concentrically with the center O of the substrate attachment area in a plan view. The diameter D1 of the substrate attachment area (upper surface) is equal to the diameter D0 of the substrate W to be processed within a range of ±5 mm.

[0144] In the substrate processing apparatus 1002, the flow control ring 31A (see Figure 8 ) is made of ceramic, and an RF electrode 41 for plasma generation is built into the flow control ring 31A.

[0145] In the substrate processing apparatus 1002, the RF electrode 41 is built into the flow control ring 31A. No ESC voltage is applied, so no leakage current is generated. Therefore, the uniformity of the plasma near the edge of the wafer W is maintained.

Claims

1. An electrostatic chuck device for a plasma space, comprising: platform, having a circular substrate attachment area on its upper surface (where D S is the diameter of the area to which the circular substrate to be processed is electrostatically attached; as well as The ESC electrode embedded in the platform has a diameter D E1 Greater than the diameter D of the substrate attachment area S , and is arranged concentrically with the center of the substrate attachment area in plan view; In which, by applying a DC voltage to the ESC electrode, the substrate to be processed is electrostatically attached to the substrate attachment area of ​​the platform by the Johnson-Rabech force, and the platform includes a high-resistance annular portion arranged in the outer part outside the substrate attachment area in a plan view, and the high-resistance annular portion is configured to suppress current leakage from the outside to the plasma space when the DC voltage is applied.

2. The electrostatic chuck apparatus of claim 1, comprising a heater located below the ESC electrode in the platform.

3. The electrostatic chuck device according to claim 1, wherein: The high resistance annular portion is made of a high resistance material having a higher volume resistivity than a material of a platform portion between the substrate attachment area and the ESC electrode.

4. The electrostatic chuck device according to claim 3, wherein: The high resistance material of the high resistance annular portion includes the same base material as the material of the portion other than the high resistance annular portion, and the concentration of the impurity element in the high resistance material of the high resistance annular portion is different from the concentration of the impurity element in the material of the portion other than the high resistance annular portion.

5. The electrostatic chuck device according to claim 4, wherein: The high resistance material of the high resistance annular portion is aluminum nitride.

6. The electrostatic chuck device according to claim 1, wherein: The high resistance annular portion is an annular convex portion which is provided to surround the substrate to be processed and protrudes upward from the substrate attachment area.

7. The electrostatic chuck device according to claim 6, wherein: The annular raised portion is made of a high-resistance material having a higher volume resistivity than a material of a platform portion between the substrate attachment region and the ESC electrode.

8. The electrostatic chuck device according to claim 7, wherein: The high resistance material of the annular protruding portion includes the same base material as the material of the portion other than the annular protruding portion, and the concentration of impurity elements in the high resistance material of the annular protruding portion is different from the concentration of impurity elements in the material of the portion other than the annular protruding portion.

9. The electrostatic chuck device according to claim 1, wherein: The high resistance annular portion is a separate annular member which is disposed to surround a substrate to be processed.

10. The electrostatic chuck device according to claim 9, wherein: The annular member includes a plurality of protrusions on a rear surface thereof.

11. The electrostatic chuck device according to claim 9, wherein: The annular member is made of a high-resistance material having a higher volume resistivity than a material of a platform portion between the substrate attachment region and the ESC electrode.

12. The electrostatic chuck device according to claim 3, wherein: As the high resistance annular portion, an annular member is separately provided on the high resistance annular portion made of a high resistance material so as to surround the substrate to be processed.

13. The electrostatic chuck device according to claim 12, wherein: The annular member includes a plurality of protrusions on a rear surface thereof.

14. The electrostatic chuck device according to claim 13, wherein: The material of the annular member is the same as that of the high resistance annular portion made of a high resistance material.

15. An electrostatic chuck device for a plasma space, comprising: platform, having a circular substrate attachment area on its upper surface (where D S is the diameter of the area to which the circular substrate to be processed is electrostatically attached; The ESC electrode embedded in the platform has a diameter D E2 Less than or approximately equal to the diameter D of the substrate attachment area S , and is arranged concentrically with the center of the substrate attachment area in plan view; as well as an RF electrode for plasma generation, which is embedded in the platform at the same depth as the ESC electrode and is located outside arranged outside the substrate attachment area in a plan view; Therein, by applying a DC voltage to the ESC electrodes, the substrate to be processed is electrostatically attached to the substrate attachment area of ​​the platform by the Johansen-Rabech force.

16. The electrostatic chuck device according to claim 15, wherein: The RF electrode is grounded through a matching circuit including a capacitor and / or a coil so that the RF electrode and the ESC electrode have equal impedance.

17. A substrate processing device comprising: room; The electrostatic chuck device of claim 1, disposed in a chamber; as well as A shower head is arranged above the electrostatic chuck device.

18. A substrate processing device comprising: room; The electrostatic chuck device of claim 15, disposed in a chamber; as well as A shower head is arranged above the electrostatic chuck device.

19. A substrate processing device comprising: room; an electrostatic chuck device disposed in the chamber; a shower head disposed above the electrostatic chuck device; as well as A flow control ring having a shape surrounding the electrostatic chuck device, The electrostatic chuck device includes: a platform having a circular substrate attachment area (where D1 is the diameter of the area) on its upper surface, to which a circular substrate to be processed (where D0 is the diameter of the substrate) is electrostatically attached; and an ESC electrode embedded in the platform, whose diameter D E2 is smaller than or approximately equal to the diameter D1 of the substrate attachment area and is arranged concentrically with the center of the substrate attachment area in plan view, and Therein, the diameter D1 in the substrate attachment area is equal to the diameter D0 of the substrate to be processed within the range of ±5 mm, and the flow control ring is made of metal and serves as an RF electrode for plasma generation.

20. A substrate processing device comprising: room; an electrostatic chuck device disposed in the chamber; a shower head disposed above the electrostatic chuck device; as well as A flow control ring having a shape surrounding the electrostatic chuck device, The electrostatic chuck device includes: a platform having a circular substrate attachment area (where D1 is the diameter of the area) on its upper surface, to which a circular substrate to be processed (where D0 is the diameter of the substrate) is electrostatically attached; and an ESC electrode embedded in the platform, whose diameter D E2 is smaller than or approximately equal to the diameter D1 of the substrate attachment area and is arranged concentrically with the center of the substrate attachment area in plan view, and The diameter D1 in the substrate attachment area is equal to the diameter D0 of the substrate to be processed within the range of ±5 mm, and the flow control ring is made of ceramic, and the RF electrode for plasma generation is embedded in the flow control ring.

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