Control and protection method for preventing direct connection fault of IGBT (Insulated Gate Bipolar Translator) and related device

Abstract

The invention discloses a control and protection method and a related device for preventing an IGBT (Insulated Gate Bipolar Transistor) from generating a straight-through fault, and the method comprises the steps: firstly analyzing and summarizing the fault reason, the fault result, the processing measure and the processing result of a T1 reported straight-through fault, and obtaining the summarized information of the T1 reported straight-through fault reason; the method comprises the following steps of: acquiring a T1-reported straight-through fault logic processing scheme, then after a T1-reported straight-through fault processing measure is completed, summarizing by combining summarized information, feedback information after T2 is conducted and a corresponding fault logic processing scheme to obtain a T1-reported straight-through fault logic processing scheme, and finally designing the T1 straight-through fault logic processing scheme into a module control panel so as to carry out straight-through fault control and protection on an IGBT (Insulated Gate Bipolar Translator). According to the control and protection method designed by the invention, after the straight-through fault occurs in the half-bridge power module, accurate fault positioning and fault removal are realized, the original board card of the converter valve power module is used, and hardware does not need to be redesigned, so that control and protection are provided for the sudden straight-through fault of the IGBT, and the development is simple and the period is short.

Description

Technical Field

[0001] The present application relates to the field of power electronics technology, and in particular to a control and protection method and related device for preventing an IGBT from experiencing a through-failure. Background Art

[0002] Insulated gate bipolar transistors (IGBTs) are vital power switching devices and are widely used in the field of power systems. However, when operating in harsh environments such as high temperature and high pressure for a long time, IGBTs are easily affected by voltage surges, overcurrents and other factors, and their failure costs account for about 80% of the cost of power electronic systems. Therefore, IGBT control and protection urgently need to be studied in depth to improve system reliability and safety. IGBT failures are generally divided into two categories: aging failures and sudden failures. However, there are few related technologies for the control and protection of sudden failures, especially sudden direct failures. Therefore, it is urgent to design a control and protection technology to prevent direct failures of IGBTs. Summary of the invention

[0003] The present application provides a control and protection method and related device for preventing IGBT from experiencing a through-fault, which is used to provide control and protection for sudden through-faults of the IGBT, and has a simple development and short cycle.

[0004] In view of this, the first aspect of the present application provides a control and protection method for preventing a through fault of an IGBT, which is applied to a flexible power transmission converter valve, wherein the flexible power transmission converter valve comprises: a module control board, a power module and an IGBT drive board, wherein the power module is a half-bridge power module, and the half-bridge power module comprises: T1 and T2;

[0005] The method comprises:

[0006] S1, analyzing and summarizing the fault cause, fault result, treatment measures and treatment results of the T1 straight-through fault, and obtaining summary information of the fault cause of the T1 straight-through fault, wherein the treatment measures include: turning on the T2;

[0007] S2, when the processing measures for the T1 straight-through fault are completed, the summary information is combined with the feedback information after the T2 is turned on and the corresponding fault logic processing scheme to obtain the T1 straight-through fault logic processing scheme, wherein the feedback information includes: reporting straight-through fault, reporting drive undervoltage alarm, no response and normal response signal;

[0008] S3. Design the T1 through-fault logic processing solution into the module control board, so as to perform through-fault control and protection on the IGBT.

[0009] Optionally, when the feedback information is the reporting of a direct fault, the fault logic processing solution includes:

[0010] Continuously turning on T2;

[0011] If a through fault occurs during the conduction period of T2, the bypass switch closing instruction is executed when the voltage of the half-bridge power module drops to no more than 500V;

[0012] If there is no through-fault during the conduction period of T2, the bypass switch closing instruction is executed when the voltage increase amplitude of the half-bridge power module is not greater than 8V within the voltage preset time period;

[0013] If the voltage of the half-bridge power module increases by more than 8V within the preset time, wait for the voltage of the half-bridge power module to drop to no more than 500V, and execute the bypass switch closing instruction.

[0014] Optionally, when the feedback information is the driver undervoltage alarm, the logic processing scheme includes:

[0015] Control the half-bridge power module to lock for a preset time; if the undervoltage alarm disappears after the preset time, and there is no fault during the execution of T2 being turned on for the preset time, control the half-bridge power module to execute the valve control instruction, and if the driver fault of T2 is reported after the preset time, continue to turn on T2;

[0016] If a through fault occurs during the conduction period of T2, wait for the voltage of the half-bridge power module to drop to less than or equal to 500V, and execute the bypass switch closing command;

[0017] If there is no through-fault during the conduction period of T2, and the voltage rise amplitude of the half-bridge power module is not greater than 8V within the voltage preset time, the bypass switch closing instruction is executed;

[0018] If the voltage of the half-bridge power module increases by more than 8V within the preset voltage duration, wait for the voltage of the half-bridge power module to drop to no more than 500V, and execute the bypass switch closing instruction.

[0019] Optionally, when the feedback information is the no response, the logic processing scheme includes:

[0020] If the voltage increase amplitude of the half-bridge power module during the preset time period is greater than 8V, then the T2 is continuously turned on, and the voltage increase amplitude of the half-bridge power module during the preset time period is waited to be less than 8V, and after the preset time period ends, the half-bridge power module is controlled to execute the valve control instruction;

[0021] If a through fault occurs during the conduction period of T2, wait for the voltage of the half-bridge power module to drop to no more than 500V, and then execute the bypass switch closing command;

[0022] If there is no through-fault during the conduction period of T2, the bypass switch closing instruction is executed when the voltage of the half-bridge power module increases by no more than 8V within the preset time.

[0023] If the voltage of the half-bridge power module increases by more than 8V within the preset voltage duration, wait for the voltage of the half-bridge power module to drop to no more than 500V, and execute the bypass switch closing instruction.

[0024] Optionally, when the feedback information indicates that the response signal is normal, the logic processing scheme includes:

[0025] The T2 is controlled to be turned on for a preset time period. If no fault is reported during the preset time period, the half-bridge power module executes the valve control instruction.

[0026] Optionally, before step S1, the following steps are also included:

[0027] The module control board sends a driving signal to the IGBT driving board, so that the IGBT driving board responds to the driving signal and then feeds back the optical signal of the IGBT to the module control board, and the module control board determines the state of the IGBT according to the optical signal.

[0028] Optionally, the fault causes include: discharge of the bypass switch, false triggering of T2, damage to the driver or IGBT of T1.

[0029] A second aspect of the present application provides a control and protection system for preventing a through-fault of an IGBT, the system being applied to a flexible power transmission converter valve, the flexible power transmission converter valve comprising: a module control board, a power module and an IGBT drive board, wherein the power module is a half-bridge power module, and the half-bridge power module comprises: T1 and T2;

[0030] The system includes:

[0031] The first analysis unit is used to analyze and summarize the fault cause, fault result, treatment measures and treatment results of the T1 straight-through fault, and obtain summary information of the cause of the T1 straight-through fault, wherein the treatment measures include: turning on the T2;

[0032] The second analysis unit is used for summarizing the summary information, the feedback information after T2 is turned on, and the corresponding fault logic processing scheme after the processing measures for the T1 straight-through fault are completed, so as to obtain the T1 straight-through fault logic processing scheme, wherein the feedback information includes: reporting straight-through fault, reporting drive undervoltage alarm, no response, and normal response signal;

[0033] The control unit is used to design the T1 through-fault logic processing scheme into the module control board, so as to control and protect the IGBT from through-fault.

[0034] A third aspect of the present application provides a computer device for preventing a through-failure of an IGBT, the device comprising a processor and a memory:

[0035] The memory is used to store program code and transmit the program code to the processor;

[0036] The processor is used to execute the steps of the control and protection method for preventing the IGBT from a through-fault as described in the first aspect according to the instructions in the program code.

[0037] A fourth aspect of the present application provides a computer-readable storage medium, wherein the computer-readable storage medium is used to store program codes, and the program codes are used to execute the control and protection method for preventing IGBT from experiencing a through-failure as described in the first aspect above.

[0038] It can be seen from the above technical solutions that this application has the following advantages:

[0039] The present application provides a control and protection method to prevent the occurrence of a straight-through fault in the IGBT. First, the fault cause, fault result, treatment measures and treatment results of the straight-through fault reported by T1 are analyzed and summarized to obtain the summary information of the cause of the straight-through fault reported by T1; then, after the treatment measures for the straight-through fault reported by T1 are completed, the summary information is combined with the feedback information after T2 is turned on and the corresponding fault logic processing scheme to obtain the logic processing scheme for the straight-through fault reported by T1, and finally the logic processing scheme for the straight-through fault of T1 is designed into the module control board, so as to control and protect the straight-through fault of the IGBT. The control and protection method designed in the present application can eliminate the false alarm of the fault after the straight-through fault occurs in the half-bridge power module, realize accurate fault location and fault elimination, and use the original board card of the converter valve power module without redesigning the hardware. It is only necessary to add the straight-through fault processing logic to the software; further, the straight-through fault processing logic designed in the present application adds self-rescue logic to the general bypass logic to prevent false alarms from causing the half-bridge power module to bypass. This provides control and protection for the sudden shoot-through failure of the IGBT, and the development is simple and the cycle is short. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 A flow chart of a control and protection method for preventing a through-failure of an IGBT provided in an embodiment of the present application;

[0041] Figure 2 A half-bridge power module topology provided in an embodiment of the present application;

[0042] Figure 3 A circuit diagram of an IGBT through-fault treatment measure under bypass switch discharge provided in an embodiment of the present application;

[0043] Figure 4 A topological diagram of a half-bridge power module fault circuit provided in an embodiment of the present application;

[0044] Figure 5 A schematic diagram of damage to a half-bridge power module T1 provided in an embodiment of the present application;

[0045] Figure 6 A schematic diagram of the structure of a control and protection system for preventing a through-failure of an IGBT provided in an embodiment of the present application. DETAILED DESCRIPTION

[0046] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0047] The following is an overview of the proposal for this application:

[0048] In the power module of the flexible power transmission converter valve, the module control board sends a drive signal to the IGBT driver board, and the IGBT driver board feeds back the IGBT opening or closing signal to the module control board. When the IGBT is working normally, the CPLD (programmable logic device) of the module control board receives the light (low level) signal fed back by the IGBT driver board. When the CPLD of the module control board detects that the IGBT driver board feeds back a no light (high level) signal, the power module reports an IGBT single pass alarm.

[0049] If a single through-trip occurs in the IGBT, the power module will process it as an alarm and latch the fault information. At the same time, the power module will follow the soft bypass self-rescue plan. If the self-rescue is successful, the power module will operate normally. If the self-rescue fails, the power module will be processed as a secondary fault, the power module will be locked, the fault information will be latched, and self-bypass will be performed according to the bypass strategy.

[0050] See also Figure 1 A control and protection method for preventing IGBT from experiencing a through-fault provided in an embodiment of the present application is applied to a flexible power transmission converter valve. The flexible power transmission converter valve includes: a module control board, a power module and an IGBT drive board, wherein the power module is a half-bridge power module, and the half-bridge power module includes: T1 and T2.

[0051] It should be noted that the half-bridge power module Figure 2 As shown, T1 and T2 in the figure are insulated gate bipolar transistors (IGBT).

[0052] Methods include:

[0053] In one embodiment, before step 101, the method further includes:

[0054] The module control board sends a driving signal to the IGBT driver board, so that the IGBT driver board responds to the driving signal and feeds back the optical signal of the IGBT to the module control board, and the module control board determines the state of the IGBT based on the optical signal.

[0055] It should be noted that this step is as described in the above scheme overview and will not be repeated here.

[0056] Step 101, analyzing and summarizing the fault cause, fault result, treatment measure and treatment result of T1 reporting a straight-through fault, and obtaining summary information of the fault cause of T1 reporting a straight-through fault, wherein the treatment measure includes: turning on T2.

[0057] Step 102, when the processing measures for T1's straight-through fault are completed, the summary information is combined with the feedback information after T2 is turned on and the corresponding fault logic processing plan to obtain the T1 straight-through fault logic processing plan, wherein the feedback information includes: reporting straight-through fault, reporting drive undervoltage alarm, no response and normal response signal.

[0058] Step 103: Design the T1 direct fault logic processing solution into the module control board, so as to control and protect the IGBT from direct fault.

[0059] It should be noted that the present application can use the original board of the converter valve power module without redesigning the hardware. It only needs to add the direct fault processing logic in the software. In other words, the T1 direct fault logic processing solution obtained in the present application is directly designed into the module control board, so as to control and protect the IGBT from direct faults.

[0060] In one embodiment, the fault causes of step 101 include: discharge of the bypass switch, mis-triggering of T2, and damage to the driver or IGBT of T1.

[0061] It should be noted that, for T1 reporting a straight-through fault, the inventors have found through analysis that the main reasons for T1 reporting a straight-through fault are: bypass switch discharge, T2 false triggering before T1 is turned on, T1 drive failure or IGBT device failure, T2 false triggering caused by interference before T1 is turned on. The following is the inventor's analysis and summary of several reasons, among which:

[0062] 1) Bypass switch discharge:

[0063] Before T1 is turned on, the bypass switch discharges. After T1 is turned on, a direct-connection occurs. T1 reports a direct-connection fault. Figure 3 As shown in loop 1, Figure 3The topology diagram of the left part is shown in the figure.

[0064] a) If T1 is not damaged after the through fault is reported, the bypass switch is still in the discharge state, and the bridge arm current passes through the bypass switch to form the following Figure 3 As shown in loop 2, Figure 3 Make the topology diagram of the right part.

[0065] b) If T1 is damaged, the capacitor will discharge through T1 and the bypass switch, the capacitor voltage will drop sharply, and T2 will be damaged at the same time, and the half-bridge power module will report an undervoltage fault. The fault analysis and summary are shown in Table 1.

[0066] Table 1 When the bypass switch is discharged, the processing logic that can be executed by the half-bridge power module is:

[0067]

[0068] 2) T2 is falsely triggered before T1 is turned on:

[0069] a) T2 driver board is damaged or malfunctioning;

[0070] Before T1 is triggered to turn on, if the T2 driver board is damaged, the T2 driver will continue to output a high level, causing T2 to be in the on state for a long time. After T1 is triggered, a short circuit will be formed due to the direct connection between the upper and lower tubes. T2 is a Class II short circuit and it is difficult to report a fault, but T2 is easy to be damaged. T1 can report a direct fault, as shown in the schematic diagram Figure 4 shown.

[0071] b) T2 is damaged;

[0072] If T2 is damaged, a through fault will be reported no matter how many times T1 is turned on. However, the bus voltage will continue to drop, the port voltage will be zero, and the bypass switch can be directly closed. The fault analysis and summary are shown in Table 2.

[0073] Table 2 The processing logic that can be executed by the half-bridge power module is as follows:

[0074]

[0075] 3) T1 driver or IGBT device failure:

[0076] The schematic diagram of T1 itself or T1 driver being damaged is as follows Figure 5 As shown, there are three combinations of damage to T1 itself and T1 driver:

[0077] a) The T1 driver is damaged, but the IGBT (T1 itself) is not damaged;

[0078] If the T1 driver is damaged, a through fault will be reported, but the IGBT is not damaged. In this case, the IGBT will not conduct.

[0079] If the IGBT turn-on signal can be sent, the lockout signal can also be sent after the through signal is detected. Therefore, after T1 reports a through fault, the IGBT is in the lockout state.

[0080] b) T1 driver is not damaged, but T1 is damaged;

[0081] If the driver is not damaged but the IGBT is damaged, the damage here is considered to be a short circuit. After communicating with device and driver manufacturers such as ABB, Infineon, CRRC, and PI, the driver will also be damaged after the IGBT short circuit is directly connected. Therefore, it can be considered that there is no IGBT short circuit damage and the driver is not damaged.

[0082] c) Both the T1 driver and the IGBT are damaged;

[0083] The module control board cannot determine the state of T1. The module control board locks the half-bridge power module according to the fault feedback signal. The fault analysis and summary are shown in Table 3.

[0084] Table 3 T1 drive or IGBT fault handling logic:

[0085]

[0086] 4) Interference before T1 is turned on causes T2 to be falsely triggered:

[0087] It should be noted that false triggering is caused by interference.

[0088] a) The interference time is very short, and the IGBT will not be saturated and turned on, and the upper and lower tubes will be directly connected, so the possibility of interference is eliminated;

[0089] b) If the interference causes T2 to be turned on for a long time, then after locking the module and turning on T2 again, no fault will be reported, and the half-bridge power module will successfully save itself.

[0090] The treatment measures for the above four faults are: turn on T2.

[0091] The following is a summary of the above four fault causes, as shown in Table 4:

[0092] Table 4

[0093]

[0094] It should be noted that regarding the false triggering of T2 in Table 4, the false triggering of T2 includes the above two situations: false triggering of T2 before T1 is turned on and false triggering of T2 caused by interference before T1 is turned on.

[0095] In one embodiment, the feedback information of step 102 and the corresponding fault logic processing scheme include:

[0096] 1) When the feedback information is the straight-through fault, the fault logic processing scheme includes:

[0097] Continuously turning on T2;

[0098] If a through fault occurs during the conduction period of T2, the bypass switch closing instruction is executed when the voltage of the half-bridge power module drops to no more than 500V;

[0099] If there is no through-fault during the conduction period of T2, wait for the voltage of the half-bridge power module to increase by no more than 8V within 10ms, and then execute the bypass switch closing command;

[0100] If the voltage of the half-bridge power module increases by more than 8V within 10ms, the bypass switch closing instruction is executed after the voltage of the half-bridge power module drops to no more than 500V.

[0101] 2) When the feedback information is the driver undervoltage alarm, the logic processing scheme includes:

[0102] Control the half-bridge power module to lock for 300us; if the undervoltage alarm disappears after 300us, and there is no fault during the 20ms period when T2 is turned on, control the half-bridge power module to execute the valve control instruction, and if the driver fault of T2 is reported after 300us, continue to turn on T2;

[0103] If a through fault occurs during the conduction period of T2, wait for the voltage of the half-bridge power module to drop to less than or equal to 500V, and execute the bypass switch closing command;

[0104] If there is no through fault during the conduction period of T2, and the voltage of the half-bridge power module rises by no more than 8V within 10ms, the bypass switch closing instruction is executed;

[0105] If the voltage of the half-bridge power module increases by more than 8V within 10ms, wait for the voltage of the half-bridge power module to drop to no more than 500V and execute the bypass switch closing instruction.

[0106] 3) When the feedback information is no response, the logic processing scheme includes:

[0107] If the voltage increase amplitude of the half-bridge power module during 20ms is greater than 8V, then the T2 is continuously turned on, and the voltage increase amplitude of the half-bridge power module during 20ms is waited to be less than 8V, and after 20ms, the half-bridge power module is controlled to execute the valve control instruction;

[0108] If a through fault occurs during the conduction period of T2, wait for the voltage of the half-bridge power module to drop to no more than 500V, and then execute the bypass switch closing command;

[0109] If there is no through-fault during the conduction period of T2, the bypass switch closing instruction is executed when the voltage of the half-bridge power module increases by no more than 8V within 10ms.

[0110] If the voltage of the half-bridge power module increases by more than 8V within 10ms, wait for the voltage of the half-bridge power module to drop to no more than 500V, and execute the bypass switch closing instruction.

[0111] 4) When the feedback information indicates that the response signal is normal, the logic processing scheme includes:

[0112] The T2 is controlled to be turned on for 20ms. If no fault is reported during the 20ms period, the half-bridge power module executes the valve control instruction.

[0113] It should be noted that, the summary information is summarized with the feedback information after T2 is turned on and the corresponding fault logic processing scheme, and the T1 straight-through fault logic processing scheme is obtained, as shown in Table 5. It can be understood that when T1 reports a straight-through fault, various causes leading to the straight-through fault of T1 are analyzed, wherein the unified exit logic measure is to turn on T2, and the feedback information after T2 is turned on and the logic processing scheme are summarized, as shown in Table 5:

[0114] Table 5 Logical solution for T1 direct fault reporting

[0115]

[0116] It should be noted that valve control instructions are the general term for instructions issued by the valve control system to the power module. Valve control instructions specifically include unlocking, locking, resetting, stopping charging, etc.

[0117] It should be noted that the definition of continuous conduction T2 in this application is as follows:

[0118] If a through fault occurs during the conduction period of T2, the half-bridge power module will be locked for 100us and then turn on T2 again (pulse level);

[0119] If an undervoltage alarm occurs during the conduction period of T2, the half-bridge power module will be locked for 300us, reporting an undervoltage fault and maintaining the conduction of T2 (long-term low level);

[0120] If a no-response fault occurs during the conduction period of T2, no processing is done and T2 is continuously turned on (long-term low level);

[0121] If T2 is turned on and there is a response, T2 will be turned on continuously (long-term low level);

[0122] The inventors have found through analysis that there are two main reasons for T2 reporting a straight-through fault: T1 short circuit damage and T2 driver damage false alarm fault, where:

[0123] 1) T1 is short-circuited and damaged;

[0124] If T1 is damaged before T2 is turned on, a short circuit will occur after T2 is turned on, and T2 will be short-circuited.

[0125] 2) T2 driver damage false alarm fault;

[0126] When T2 is turned on, the driver reports an IGBT direct fault by mistake, but the IGBT is not actually direct. If the driver is irreversibly damaged, it will still report a fault when T2 is turned on again. The half-bridge power module cannot operate and must exit. However, there is a problem at this time. No matter how many times T2 sends commands, it still reports a direct fault. The summary is shown in Table 6:

[0127] Table 6

[0128]

[0129] In summary, the through fault is a common fault in the half-bridge power module. To prevent false alarms that cause the half-bridge power module to bypass, the through fault processing logic adds self-rescue logic and self-check logic. After a T1 or T2 through fault occurs, the half-bridge power module fault processing logic is as follows:

[0130] If the bypass switch feedback is in the open state, the self-rescue logic is executed;

[0131] 1) If the self-rescue is successful, the self-check logic is executed;

[0132] a) If the self-test is successful, it will continue to accept valve control instructions;

[0133] b) If the self-test fails, the bypass logic is executed;

[0134] 2) If self-rescue fails, the bypass logic is executed.

[0135] If the bypass switch feedback is in the closed state, the bypass logic is executed.

[0136] The present application provides a control and protection method to prevent the occurrence of a straight-through fault in the IGBT. First, the fault cause, fault result, treatment measures and treatment results of the straight-through fault reported by T1 are analyzed and summarized to obtain the summary information of the cause of the straight-through fault reported by T1; then, after the treatment measures for the straight-through fault reported by T1 are completed, the summary information is combined with the feedback information after T2 is turned on and the corresponding fault logic processing scheme to obtain the logic processing scheme for the straight-through fault reported by T1, and finally the logic processing scheme for the straight-through fault of T1 is designed into the module control board, so as to control and protect the straight-through fault of the IGBT. The control and protection method designed in the present application can eliminate the false alarm of the fault after the straight-through fault occurs in the half-bridge power module, realize accurate fault location and fault elimination, and use the original board card of the converter valve power module without redesigning the hardware. It is only necessary to add the straight-through fault processing logic to the software; further, the straight-through fault processing logic designed in the present application adds self-rescue logic to the general bypass logic to prevent false alarms from causing the half-bridge power module to bypass. This provides control and protection for the sudden shoot-through failure of the IGBT, and the development is simple and the cycle is short.

[0137] The above is a control and protection method for preventing IGBT from having a straight-through failure provided in an embodiment of the present application. The following is a control and protection system for preventing IGBT from having a straight-through failure provided in an embodiment of the present application.

[0138] See also Figure 6 A control and protection system for preventing a through-fault of an IGBT provided in an embodiment of the present application is applied to a flexible power transmission converter valve, wherein the flexible power transmission converter valve comprises: a module control board, a power module and an IGBT drive board, wherein the power module is a half-bridge power module, and the half-bridge power module comprises: T1 and T2;

[0139] The system includes:

[0140] The first analysis unit 201 is used to analyze and summarize the fault cause, fault result, processing measure and processing result of T1 reporting the straight-through fault, and obtain the summary information of the fault cause of T1 reporting the straight-through fault, wherein the processing measure includes: turning on T2.

[0141] The second analysis unit 202 is used to summarize the summary information with the feedback information after T2 is turned on and the corresponding fault logic processing plan after the processing measures for the T1 direct fault are completed, so as to obtain the T1 direct fault logic processing plan, wherein the feedback information includes: reporting direct fault, reporting drive undervoltage alarm, no response and normal response signal.

[0142] The control unit 203 is used to design the T1 through-fault logic processing scheme into the module control board, so as to control and protect the IGBT from through-fault.

[0143] Furthermore, an embodiment of the present application also provides a computer device for preventing a through-failure of an IGBT, the device comprising a processor and a memory:

[0144] The memory is used to store program code and transmit the program code to the processor;

[0145] The processor is used to execute the steps of the control and protection method for preventing the IGBT from having a through-fault as described in the above method embodiment according to the instructions in the program code.

[0146] Furthermore, a computer-readable storage medium is provided in an embodiment of the present application, and the computer-readable storage medium is used to store program code, and the program code is used to execute the control and protection method for preventing the IGBT from a through-failure as described in the above method embodiment.

[0147] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0148] The terms "first", "second", "third", "fourth", etc. (if any) in the specification of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0149] It should be understood that in this application, "at least one (item)" means one or more, and "plurality" means two or more. "And / or" is used to describe the association relationship of associated objects, indicating that three relationships may exist. For example, "A and / or B" can mean: only A exists, only B exists, and A and B exist at the same time, where A and B can be singular or plural. The character " / " generally indicates that the objects associated before and after are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, c can be single or multiple.

[0150] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0151] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0152] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0153] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the prior art or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions to enable a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (full name in English: Read-Only Memory, English abbreviation: ROM), random access memory (full name in English: Random Access Memory, English abbreviation: RAM), disk or optical disk and other media that can store program codes.

[0154] As described above, the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A control method for preventing IGBT from experiencing a through-failure, characterized in that: Applied to a flexible power transmission converter valve, the flexible power transmission converter valve comprises: a module control board, a power module and an IGBT drive board, wherein the power module is a half-bridge power module, and the half-bridge power module comprises: T1 and T2; Methods include: S1, analyzing and summarizing the fault cause, fault result, treatment measures and treatment results of the T1 straight-through fault, and obtaining summary information of the fault cause of the T1 straight-through fault, wherein the treatment measures include: turning on the T2; S2, when the processing measures for the T1 straight-through fault are completed, the summary information is combined with the feedback information after the T2 is turned on and the corresponding fault logic processing scheme to obtain the T1 straight-through fault logic processing scheme, wherein the feedback information includes: reporting straight-through fault, reporting drive undervoltage alarm, no response and normal response signal; S3. Design the T1 through-fault logic processing solution into the module control board, so as to perform through-fault control and protection on the IGBT.

2. The control and protection method for preventing IGBT from experiencing a through-failure according to claim 1, characterized in that: When the feedback information is the straight-through fault, the fault logic processing scheme includes: Continuously turning on T2; If a through fault occurs during the conduction period of T2, the bypass switch closing instruction is executed when the voltage of the half-bridge power module drops to no more than 500V; If there is no through-fault during the conduction period of T2, the bypass switch closing instruction is executed when the voltage increase amplitude of the half-bridge power module is not greater than 8V within the voltage preset time period; If the voltage of the half-bridge power module increases by more than 8V within 10ms, the bypass switch closing instruction is executed after the voltage of the half-bridge power module drops to no more than 500V.

3. The control and protection method for preventing IGBT from experiencing a through-failure according to claim 1, characterized in that: When the feedback information is the driver undervoltage alarm, the logic processing scheme includes: Control the half-bridge power module to lock for 300us; if the undervoltage alarm disappears after the preset time, and there is no fault during the execution of T2 being turned on for the preset time, control the half-bridge power module to execute the valve control instruction, and if the driver fault of T2 is reported after the preset time, continue to turn on T2; If a through fault occurs during the conduction period of T2, wait for the voltage of the half-bridge power module to drop to less than or equal to 500V, and execute the bypass switch closing command; If there is no through-fault during the conduction period of T2, and the voltage rise amplitude of the half-bridge power module is not greater than 8V within the voltage preset time, the bypass switch closing instruction is executed; If the voltage of the half-bridge power module increases by more than 8V within the preset voltage duration, wait for the voltage of the half-bridge power module to drop to no more than 500V and execute the bypass switch closing instruction.

4. The control and protection method for preventing IGBT from experiencing a through-failure according to claim 1, characterized in that: When the feedback information is the no response, the logic processing scheme includes: If the voltage increase amplitude of the half-bridge power module during the preset time period is greater than 8V, then the T2 is continuously turned on, and the voltage increase amplitude of the half-bridge power module during the preset time period is waited to be less than 8V, and after the preset time period ends, the half-bridge power module is controlled to execute the valve control instruction; If a through fault occurs during the conduction period of T2, wait for the voltage of the half-bridge power module to drop to no more than 500V, and then execute the bypass switch closing command; If there is no through-fault during the conduction period of T2, when the voltage of the half-bridge power module increases by no more than 8V within the preset time, the bypass switch closing instruction is executed; If the voltage of the half-bridge power module increases by more than 8V within the preset voltage duration, wait for the voltage of the half-bridge power module to drop to no more than 500V, and execute the bypass switch closing instruction.

5. The control and protection method for preventing IGBT from experiencing a through-failure according to claim 1, characterized in that: When the feedback information indicates that the response signal is normal, the logic processing scheme includes: The T2 is controlled to be turned on for a preset time period. If no fault is reported during the preset time period, the half-bridge power module executes the valve control instruction.

6. The control and protection method for preventing IGBT from experiencing a through-failure according to claim 1, characterized in that: Step S1, before that, also includes: The module control board sends a driving signal to the IGBT driving board, so that the IGBT driving board responds to the driving signal and then feeds back the optical signal of the IGBT to the module control board, and the module control board determines the state of the IGBT according to the optical signal.

7. The control and protection method for preventing IGBT from experiencing a through-failure according to claim 1, characterized in that: The fault causes include: bypass switch discharge, T2 false triggering, and T1 driver or IGBT damage.

8. A control and protection system for preventing IGBT from experiencing a through-failure, characterized in that: Applied to a flexible power transmission converter valve, the flexible power transmission converter valve comprises: a module control board, a power module and an IGBT drive board, wherein the power module is a half-bridge power module, and the half-bridge power module comprises: T1 and T2; The system includes: The first analysis unit is used to analyze and summarize the fault cause, fault result, treatment measures and treatment results of the T1 straight-through fault, and obtain summary information of the cause of the T1 straight-through fault, wherein the treatment measures include: turning on the T2; The second analysis unit is used for summarizing the summary information, the feedback information after T2 is turned on, and the corresponding fault logic processing scheme after the processing measures for the T1 straight-through fault are completed, so as to obtain the T1 straight-through fault logic processing scheme, wherein the feedback information includes: reporting straight-through fault, reporting drive undervoltage alarm, no response, and normal response signal; The control unit is used to design the T1 through-fault logic processing scheme into the module control board, so as to control and protect the IGBT from through-fault.

9. A computer device for preventing IGBT from experiencing a through failure, characterized in that: The device comprises a processor and a memory: The memory is used to store program code and transmit the program code to the processor; The processor is used to execute the control and protection method for preventing the IGBT from having a through-fault according to any one of claims 1 to 7 according to the instructions in the program code.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium is used to store program codes, and the program codes are used to execute the control and protection method for preventing a through-failure of an IGBT as described in any one of claims 1 to 7.

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