IGBT power module and energy storage converter

Abstract

The invention discloses an IGBT power module and an energy storage converter. The power module comprises a first module unit, a second module unit, a third module unit and a busbar board, each of the three module units comprises a cooling plate and an IGBT device group at least located on the surface of one side of the cooling plate, and the first module unit and the second module unit are electrically connected with the third module unit; the first cooling plate of the first module unit and the second cooling plate of the second module unit are arranged in parallel along a first direction; the third cooling plate of the third module unit is at least partially located on one side of the first cooling plate and the second cooling plate in the thickness direction. The IGBT power module is compact in arrangement, compact in structure and good in heat dissipation effect, and space occupation and stray resistance are reduced.

Description

[0001] This application is a divisional application of a patent application with an application date of July 17, 2024, an application number of 202410956011.0, and an invention name of “An IGBT power module and energy storage converter”. Technical Field

[0002] The present application relates to the technical field of converters, and in particular to an IGBT power module and an energy storage converter including the IGBT power module. Background Art

[0003] The PCS (Power Conversion System) energy storage converter is a device that can control the charging and discharging process of the battery, perform AC-DC conversion, and directly supply power to the AC load without a power grid. Its core components include IGBT power modules. As the core component of energy conversion and transmission in the PCS energy storage converter system, the IGBT power module needs to be equipped with multiple IGBT (Insulated Gate Bipolar Transistor) devices, busbars, and circuit boards. It generates a lot of heat, and a cooling plate must be set up for timely heat dissipation. The heat dissipation effect is an important factor affecting the operating efficiency of the module, but the setting of the cooling plate also makes the arrangement of many components such as the cooling plate particularly important. If the arrangement is not reasonable, it will not only occupy a large space, which is not conducive to the layout in the cabinet and cost saving, but also easily affect the heat dissipation effect and the operation of the module. It will also cause the length of the busbar for electrical connection between IGBT devices to be large, the stray resistance is high, hindering the current transmission efficiency, and affecting the power density and use efficiency of the module.

[0004] Therefore, IGBT power modules have design requirements in terms of both heat dissipation and structural layout. Summary of the invention

[0005] In view of this, the embodiments of the present application are committed to providing an IGBT power module, which has a tight arrangement, a compact structure, and good heat dissipation efficiency. On the basis of ensuring good heat dissipation effect, it reduces space occupancy, reduces stray resistance, increases power density, and improves the current transmission efficiency and conversion efficiency of the module, so as to at least take into account the requirements of IGBT power modules in the prior art in terms of heat dissipation and arrangement to a certain extent.

[0006] The present application provides an IGBT power module, comprising a first module unit, a second module unit, a third module unit and a busbar plate connected to a capacitor, wherein the three module units each comprise a cooling plate and an IGBT device group located at least on one side surface of the cooling plate, and the first module unit and the second module unit are electrically connected to the third module unit respectively;

[0007] The first cooling plate of the first module unit and the second cooling plate of the second module unit are arranged in parallel along a first direction; the third cooling plate of the third module unit is at least partially located on one side of the first cooling plate and the second cooling plate in the thickness direction.

[0008] In a possible implementation manner, the third cooling plate is arranged at an angle to the first cooling plate and the second cooling plate, and one end of the third cooling plate extends in a direction away from the first cooling plate and the second cooling plate.

[0009] In a possible implementation manner, one end of the third cooling plate is closer to an end close to or connected to the first cooling plate and the second cooling plate than the other end of the third cooling plate.

[0010] In a possible implementation manner, multiple IGBT devices in the same IGBT device group in each module unit are arranged along the third direction.

[0011] In a possible implementation manner, the busbar plate is located on a side of the first cooling plate and the second cooling plate away from the third cooling plate, and the busbar plate is arranged parallel to the first cooling plate and the second cooling plate.

[0012] In a possible implementation manner, in the first direction, the IGBT device group on the first cooling plate and the IGBT device group on the second cooling plate are distributed on both sides of the first end of the IGBT device group on the third cooling plate.

[0013] In a possible implementation manner, the third cooling plate is disposed at an acute angle with any one of the first cooling plate and the second cooling plate, and the angle range of the acute angle is 15°-75°.

[0014] In a possible implementation manner, the third cooling plate is perpendicular to the first cooling plate and the second cooling plate; the first module unit and the second module unit are symmetrically arranged on both sides of the third module unit in a thickness direction.

[0015] In a possible implementation manner, the first cooling plate and the second cooling plate are connected; or, the first cooling plate and the second cooling plate are an integrated structure to form an integral cooling plate.

[0016] In a possible implementation, the first cooling plate and the second cooling plate have a distance in the first direction, and one end of the third cooling plate in the second direction extends into the distance, and the other end is located on a side of the first cooling plate and the second cooling plate away from the busbar plate.

[0017] In a possible embodiment, the busbar board includes a main board and connecting boards located at both ends of the main board in the first direction, the two connecting boards are electrically connected to the first module unit and the second module unit respectively through a first connecting row, and the connecting boards and the first connecting row are arranged one to one and stacked in the second direction.

[0018] In a possible implementation, the busbar plate includes a main board and connecting plates located on both sides of the main board in the first direction, the connecting plates are arranged at an angle to the main board, one of the connecting plates extends in a direction close to the first cooling plate, and the other connecting plate extends in a direction close to the second cooling plate;

[0019] The two connection plates are electrically connected to the first module unit and the second module unit respectively through two first connection bars.

[0020] In a possible implementation manner, the connecting plate is perpendicular to the main board.

[0021] In a possible implementation manner, the first connection row includes two bending sections that are sequentially connected and arranged at an angle.

[0022] In a possible implementation manner, both the first cooling plate and the second cooling plate are provided with an IGBT device group on a side facing away from the busbar plate, and are not provided with an IGBT device group on a side facing the busbar plate.

[0023] In a possible implementation manner, the first IGBT device group and the second IGBT device group are respectively disposed on both side surfaces in the thickness direction of the first cooling plate, the first IGBT device group and the second IGBT device group are also respectively disposed on both side surfaces in the thickness direction of the second cooling plate, and a group of third IGBT device groups are respectively disposed on both side surfaces in the thickness direction of the third cooling plate.

[0024] The first IGBT device group and the second IGBT device group on the first cooling plate are electrically connected to one group of the third IGBT device groups, and the first IGBT device group and the second IGBT device group on the second cooling plate are electrically connected to another group of the third IGBT device groups.

[0025] In a possible implementation manner, the first module unit further includes a fourth cooling plate stacked and spaced apart from the first cooling plate, and a first IGBT device group and a second IGBT device group are respectively arranged on opposite plate surfaces of the first cooling plate and the fourth cooling plate;

[0026] The second module unit further includes a fifth cooling plate stacked and spaced apart from the second cooling plate, and a first IGBT device group and a second IGBT device group are respectively arranged on opposite plate surfaces of the second cooling plate and the fifth cooling plate;

[0027] A third IGBT device group is respectively arranged on both side surfaces of the third cooling plate in the thickness direction;

[0028] The first IGBT device group and the second IGBT device group in the first module unit are electrically connected to one group of the third IGBT device group, and the first IGBT device group and the second IGBT device group in the second module unit are electrically connected to another group of the third IGBT device group.

[0029] The present application also provides an energy storage inverter, comprising a cabinet and a DC fuse, a DC isolating switch, an IGBT power module, a reactor, an AC filter capacitor and an AC circuit breaker arranged in the cabinet and connected in sequence, wherein the IGBT power module is an IGBT power module as described in any of the above items.

[0030] The IGBT power module provided in the present application includes three cooling plates, and the IGBT device groups are distributed on the three cooling plates to form three module units for heat dissipation respectively. The module has a good heat dissipation structure and can ensure the heat dissipation effect of the high-power IGBT module. At the same time, the first and second cooling plates are arranged in parallel, and the third cooling plate is located on one side of the two. The three have a compact structure, so that the length of the second connecting row required to connect the three groups of IGBT device groups is short, and the stray inductance resistance is small. The busbar plate with capacitors can be arranged adjacent to the other end of the IGBT device group on the first and second cooling plates, so that the length of the first connecting row required to connect the busbar plate and the IGBT device group is short, and the stray inductance resistance is small.

[0031] It can be seen that the IGBT power module provided in the present application has good heat dissipation performance, and the overall structure is compact and the arrangement is tight. It not only occupies a small space, but is also conducive to arrangement in the equipment cabinet, saving space and cost. The busbar length for circuit connection between devices is short and the stray inductance resistance is small, so that the overall stray resistance of the module is small and the power density is high, thereby improving the current transmission efficiency of the module. In addition, the good heat dissipation performance can also improve the current transmission efficiency and operation efficiency of the module, thereby taking into account the needs of the IGBT power module in terms of heat dissipation and arrangement, and effectively improving the overall performance of the module. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 Shown is a first angle schematic diagram of an IGBT power module in an embodiment of the present application.

[0033] Figure 2Shown is a second angle schematic diagram of the IGBT power module in an embodiment of the present application.

[0034] Figure 3 Shown is a schematic diagram of the distribution and connection of IGBT components on three module units in an embodiment of the present application.

[0035] Figure 4 Shown is a schematic diagram of the arrangement of three cooling plates in an embodiment of the present application.

[0036] Figure 5 Shown is a schematic diagram of the bending of the second connecting row in the embodiment of the present application.

[0037] Figure 6 Shown in the figure is a schematic diagram of the bending arrangement of the busbar plate in an embodiment of the present application.

[0038] Figure 7 A schematic diagram of the connection between the busbar plate and the first connecting bar in an embodiment of the present application is shown in FIG.

[0039] Figure 1-Figure 7 middle:

[0040] 1. First cooling plate; 2. Second cooling plate; 3. Third cooling plate; 4. First IGBT device group; 4', First IGBT device group A; 4", First IGBT device group B; 5. Second IGBT device group; 5', Second IGBT device group A; 5", Second IGBT device group B; 6. Third IGBT device group; 6', Third IGBT device group A; 6", Third IGBT device group B; 7. Busbar plate; 71. Main board; 72. Connecting plate; 8. Conductive column; 9. First connecting row; 91a, First A bending section; 92a, Second A bending section; 93a, Third A bending section; 91b, First B bending section; 92b, Second B bending section; 10. A connecting row; 11. B connecting row; 12. C connecting row; 13. D connecting row. DETAILED DESCRIPTION

[0041] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0042] It should be noted that the descriptions of relative position relationships in this application, such as "parallel" and "perpendicular", all cover the error range. For example, "parallel" actually refers to "parallel or substantially parallel", "perpendicular" actually refers to "vertical or substantially vertical", and "consistent in direction" actually refers to "consistent in direction or substantially consistent in direction", and so on.

[0043] Please refer to the attached Figure 1 -Attached Figure 7 , the embodiment of the present application provides an IGBT power module, the IGBT power module includes one or more power units, capacitors and busbars 7, the capacitors are arranged on the busbars 7, and the busbars 7 and the power units are electrically connected. Each power unit includes three IGBT device groups, which can be recorded as the first IGBT device group 4, the second IGBT device group 5, and the third IGBT device group 6. Each IGBT device group includes at least one IGBT device (i.e., the IGBT device monomer shown in the figure), and each power unit performs inversion of direct current and variable current. Therefore, among the three IGBT device groups in each power unit, two IGBT device groups (such as the first IGBT device group 4 and the second IGBT device group 5) are connected to the busbars 7, connected to the DC circuit, such as the input side of the power module, and the other IGBT device group (such as the third IGBT device group 6) is connected to the AC circuit, such as for outputting AC power, as the output side of the module power. Of course, the inversion direction can also be changed to convert the three-phase AC power into DC power, such as the third IGBT device group 6 is connected to the AC circuit but is the input side, the first IGBT device group 4 and the second IGBT device group 5 are connected to the DC circuit but are the output side, and the power module inverts the input AC power into DC power output. The principle of bidirectional inversion belongs to the public technology known in the art and will not be described in detail here.

[0044] Specifically, each IGBT device group has two connection ends; the first connection end of the first IGBT device group 4 and the first connection end of the second IGBT device group 5 are both connected to the busbar 7, the second connection end is connected to the first connection end of the third IGBT device group 6, and the second connection end of the third IGBT device group 6 is used to connect to other electrical components.

[0045] In the present application, the IGBT power module also includes three cooling plates (not limited to only three cooling plates, and may also include other cooling plates in addition to these three), which are denoted as the first cooling plate 1, the second cooling plate 2 and the third cooling plate 3, wherein the first cooling plate 1 and the second cooling plate 2 may be an integrated structure or a split structure. Each IGBT device group (at least three groups of IGBT device groups) is distributed on the three cooling plates, such as being attached to the plate surface of the cooling plate, to form three module units for heat dissipation respectively, denoted as the first module unit, the second module unit and the third module unit. With such a configuration, the IGBT power module has a good heat dissipation structure and good heat dissipation effect, and can be suitably configured in terms of heat dissipation and high power. For example, when only one power unit, that is, three groups of IGBT device groups, is provided, one IGBT device group occupies one cooling plate exclusively, and the other side of the cooling plate can be close to the busbar plate 7, which can significantly improve the cooling and heat dissipation performance of the entire module; when IGBT device groups are provided on both side surfaces of each cooling plate, the overall power of the entire power module is large, and it has at least two power units, while also ensuring timely heat dissipation of each IGBT device, thereby being able to effectively dissipate heat for high-power IGBT power modules.

[0046] Among the three module units, the first module unit and the second module unit are both electrically connected to the third module unit. For example, when performing DC-to-AC inversion, the IGBT device groups of the first module unit and the second module unit are the input side of the power module, and the IGBT device group of the third module unit is the output side. That is, the first IGBT device group 4 and the second IGBT device group 5 are distributed on the first cooling plate 1 and the second cooling plate 2, and the third IGBT device group 6 is located on the third cooling plate 3. It can also be said that the IGBT device group on the third cooling plate 3 is the third IGBT device group 6, and the IGBT device groups on the first cooling plate 1 and the second cooling plate 2 are the first IGBT device group 4 and / or the second IGBT device group 5 (there are various setting cases according to the distribution of the first and second IGBT device groups on the two cooling plates, which will be elaborated in detail below). At the same time, the first module unit and the second module unit are arranged and parallelly set along the first direction; the first module unit and the second module unit can be physically connected in the first direction (such as connected by fasteners or brackets or plug-in structures, etc.), or they can have a spacing; the third module unit is located on one side of the first module unit and the second module unit in the thickness direction, which is also the second direction. For example, it can form an angle with the first module unit, such as being vertically set, etc., and the busbar plate 7 can be located on the other side of the first module unit and the second module unit in the second direction, or it can be in a split form or a cross structure and be located at the ends of the first module unit and the second module unit that are far away from each other in the first direction. At the same time, the three module units can extend in the same direction. For example, the length direction is the third direction, and multiple IGBT devices in the same IGBT device group in each module unit are arranged along the third direction. In the first and second module units, the two connection ends of the IGBT device group can be arranged along the first direction. Then, for the IGBT device group in the first module unit and the IGBT device group in the second module unit, the ends of the two device groups that are close to each other are used as the second connection end for easy close connection.

[0047] In this way, the entire power module has a compact structure and a dense layout. The connection ends of each IGBT device group can be arranged adjacently, the length of the required busbar is short, the stray inductance resistance is low, and the three module units are arranged in a T shape or a similar T shape, such as a卜 shape.

[0048] Meanwhile, the third module unit has two ends in the second direction. One end is closer to the end where the first and second modules are close to or connected to each other than the other end, that is, the distance from this end to the end where the first and second modules are close to or connected to each other is shorter. Denote the end of the third module closer to the first and second module units as the first end and the other end as the second end; this first end is closer to the end where the first module unit and the second module unit are close to each other than the second end (meanwhile, it can also be that the distance from this end to the end where the first and second module units are close to each other is A, and the distance from this end to the end where the first and second module units are far from each other is B, and A is less than B). Then, the first connection end of the IGBT device group on the third cooling plate 3, that is, the first connection end of the third IGBT device group 6, can be arranged adjacent to the second connection ends of the IGBT components on the first module unit and the second module unit, that is, the first IGBT device group 4 and the second IGBT device group. Preferably, it can be located between the second connection ends of the IGBT components on the first module unit and the second module unit, as shown in the appendix Figure 1 As shown, it is convenient to electrically connect the three IGBT device groups in the same power unit, shorten the distance between the connection ends, and reduce the size of the required connection busbar.

[0049] In this way, the entire power module has a compact structure and a dense layout. The connection ends of each IGBT device group are arranged adjacent to each other. The required length of the busbar is short, the stray inductance resistance is low, and the three module units are arranged in a T shape or a shape similar to a T shape, such as a卜shape.

[0050] Specifically, the first cooling plate 1 and the second cooling plate 2 are arranged in the first direction and are parallel to each other, and the thickness direction is the second direction perpendicular to the first direction, that is, the thickness directions of the first cooling plate 1 and the second cooling plate 2 are parallel and both perpendicular or substantially perpendicular to the first direction and are consistent with the second direction. The first cooling plate 1 and the second cooling plate 2 are connected to each other, are of an integral structure, or have a spacing in the first direction. At least a part of the third cooling plate 3 is located on one side of the first cooling plate 1 and the second cooling plate 2 in the second direction. The third cooling plate 3 can be arranged at an angle with both the first cooling plate 1 and the second cooling plate 2 (the plate surfaces are not parallel but have an angle), such as being perpendicular to the first cooling plate 1 and the second cooling plate 2. At the same time, the three cooling plates extend in the same direction, all along the third direction, and the multiple IGBT devices in the same IGBT device group on each cooling plate are arranged along the third direction.

[0051] And the end of the third cooling plate 3 that is closer to the first and second cooling plates in the second direction is the first end, and the other end is the second end. The first end is arranged adjacent to the end where the first cooling plate 1 and the second cooling plate 2 are close to each other, that is, the distance between the first end of the third cooling plate 3 and the end where the first cooling plate 1 and the second cooling plate 2 are close to each other is L1, and the distance between the second end of the third cooling plate 3 and the end where the first and second cooling plates are close to each other is L2, and the projection size of L1 in the first direction is smaller than the projection size of L2 in the first direction. At the same time, the first end of the third cooling plate 3 is at a distance of L3 from the end where the first cooling plate 1 and the second cooling plate 2 are close to or connected, and at a distance of L4 from the other end of the first and second cooling plates; wherein the projection size of L3 in the second direction is smaller than the projection size of L3 in the second direction. (such as Figure 1 As shown, the end of the first cooling plate 1 and the IGBT device group thereon that is closer to the second cooling plate 2 in the first direction is the second end, and the other end is the first end; the end of the second cooling plate 2 and the IGBT device group thereon that is closer to the first cooling plate 1 in the first direction is the second end, and the other end is the first end; the distance between the first end of the third cooling plate 3 and the second ends of the first cooling plate 1 and the second cooling plate 2 is less than the distance between the first end of the third cooling plate 3 and the first end of the second cooling plate 2; the distance between the first end of the third cooling plate 3 and the second ends of the first cooling plate 1 and the second cooling plate 2 is less than the distance between the second end of the third cooling plate 3 and the second ends of the first cooling plate 1 and the second cooling plate 2). For example, the projection of the first end of the third cooling plate 3 in the second direction may be located within the interval between the first cooling plate 1 and the second cooling plate 2 in the first direction, and the second end of the third cooling plate 3 is located on one side of the thickness direction of the first cooling plate 1 or the second cooling plate 2.

[0052] Then, through the arrangement, the first connection end of the third IGBT device group 6 can be adjacent to the second connection ends of the first and second IGBT device groups at the same time, which is convenient for close connection. For example, in the first direction, the first connection end of the third IGBT device group 6 on the third cooling plate 3 is located between the IGBT device group on the first cooling plate 1 and the IGBT device group on the second cooling plate 2 (the second connection end of the third IGBT device group 6 is an AC end, located at the second end of the third cooling plate 3). The three cooling plates or three module units are arranged in a herringbone shape or a T-shape or a T-like shape such as a herringbone shape, and the overall structure is compact and arranged adjacent to each other.

[0053] The busbar plate 7 can be located on the other side of the first cooling plate 1 and the second cooling plate 2 in the second direction, or located at other positions such as adjacent to the first connection end of the IGBT device group on the first cooling plate 1 and the second cooling plate 2. It can also shorten the distance between the busbar plate 7 and the connection end of the IGBT device group, shorten the required size of the first connection row 9, and reduce noise.

[0054] In summary, it can be seen that the IGBT power module provided by the present application includes three cooling plates, and the IGBT device groups are distributed on the three cooling plates to form three module units that dissipate heat separately. At the same time, the first and second cooling plates 2 are arranged in parallel, and the third cooling plate 3 is located on one side of the two, and the three are arranged in a T shape or a shape similar to a T shape, such as a卜 shape, with a compact structure and a close arrangement. Moreover, the connection ends for electrically connecting the three groups of IGBT device groups are arranged adjacent to each other. For example, the first connection end of the third IGBT device group 6 is respectively connected to the second connection end of the first IGBT device group 4 and the second connection end of the second IGBT device group 5. In the present application, the first connection end of the third IGBT device group 6 can be located between the second connection end of the first IGBT device group 4 and the second connection end of the second IGBT device group 5, and at the same time, it is arranged adjacent to the ends of the two groups of IGBT device groups that need to be connected, so that the length of the second connection row connecting the three groups of IGBT device groups is short and the stray inductance resistance is small. And the busbar plate 7 provided with a capacitor can also be arranged adjacent to the other end of the IGBT device group connected thereto, shortening the distance between the connection ends. Then the length of the first connection row 9 connecting the busbar plate 7 and the IGBT device group is short and the stray inductance resistance is small.

[0055] With such an arrangement, the entire power module has a compact structure and a close arrangement. It not only occupies a small space, is conducive to being arranged in the equipment cabinet, saves space and cost, but also the connection ends of each IGBT device group are arranged adjacent to each other, the required length of the busbar is short, and the stray inductance resistance is low, making the overall stray resistance of the module small and the power density high, improving the current transmission efficiency of the module. In addition, the good heat dissipation performance can also improve the current transmission efficiency of the module and ensure the operation efficiency of the module. Thus, the requirements of the IGBT power module in terms of heat dissipation and arrangement are taken into account, and the overall use performance of the module is effectively improved.

[0056] In the first direction, the first cooling plate 1 and the second cooling plate 2 have a spacing, are connected or are of an integral structure. In some embodiments, the first cooling plate 1 and the second cooling plate 2 are of an integral structure to form an integral two-in-one cooling plate. The two-in-one cooling plate is provided with at least two groups of IGBT device groups on the side facing the third cooling plate 3, at least one group of first IGBT device groups 4 and at least one group of second IGBT device groups 5. At the same time, the first IGBT device group 4 and the second IGBT device group 5 are arranged along the first direction and have a spacing, and the first connection end of the third IGBT device group 6 on the third cooling plate 3 is arranged adjacent to the end where the first IGBT device group 4 and the second IGBT device group 5 are close to each other, such as being located within the spacing in the first direction, or the projection in the second direction being located within the spacing, so as to be located between the first IGBT device group 4 and the second IGBT device group 5, and at the same time, it is arranged adjacent to the second connection ends of the two IGBT devices, with a short distance.

[0057] In some other embodiments, the first cooling plate 1 and the second cooling plate 2 have a spacing in the first direction, and one end of the second cooling plate 2 close to the first cooling plate 1 and the second cooling plate 2 is located within the spacing or its projection in the second direction is located within the spacing. Figure 1 As shown, in this arrangement, the connection ends of the IGBT device groups on the three cooling plates are also arranged close to each other, the distance is short, and the required size of the second connection row is short.

[0058] like Figure 1 As shown, in a preferred embodiment, the first cooling plate 1 and the second cooling plate 2 have a spacing in the first direction, and one end of the third cooling plate 3 in the second direction extends into the spacing, and the other end is located on one side of the first cooling plate 1 and the second cooling plate 2 in the second direction. In this way, the size of the second connecting row between the three module units can be shortened.

[0059] Preferably, a connection end of the third IGBT device group 6 close to one end of the first cooling plate 1 and the second cooling plate 2 , such as a first connection end of the third IGBT device group 6 , is located in the middle of the first cooling plate 1 and the second cooling plate 2 in the thickness direction.

[0060] Thus, the distance L4 between the first connection end of the third IGBT device group 6 located on the left side of the third cooling plate 3 and the second connection end of the first IGBT device group 4 on the first cooling plate 1 is the same as the distance L5 between the first connection end of the third IGBT device group 5, and the distance between the first connection end of the third IGBT device group 6 located on the right side of the third cooling plate 3 and the connection ends of the first IGBT device group 4 and the second IGBT device group 5 on the second cooling plate 2 is also the same. On the basis of shortening the size of the second connection row, the stray inductance resistance is further reduced.

[0061] The second module unit is located on one side of the first module unit and the second module unit. Meanwhile, relative to the first module unit and the second module unit arranged in parallel and side by side, the third module unit may be arranged at an angle with the first and second module units, such as being arranged vertically. Preferably, the first end of the third module unit is located between the first module unit and the second module unit in the first direction or is opposite to the middle area of ​​the first module unit and the second module unit as a whole in the first direction.

[0062] The third module unit is arranged at an angle to the first module unit and the second module unit. For example, the third module unit is perpendicular to the first module unit and the second module unit, and is at an angle of 90° to both of them, or the third module unit is arranged at an acute angle to any one of the first module unit and the second module unit, and is arranged at an obtuse angle to the other.

[0063] Specifically, in some embodiments, the third cooling plate 3 may be located as a whole on one side of the first cooling plate 1 and the second cooling plate 2 in the thickness direction and also in the second direction. At the same time, the third cooling plate 3 is arranged at an acute angle to any one of the first cooling plate 1 and the second cooling plate 2, and is arranged at an obtuse angle to the other. The acute angle and the obtuse angle refer to the angle between the two cooling plate surfaces. The angle of the acute angle may be any angle greater than 0° and less than 90°. Suitably, the angle range of the acute angle may be set between 15°-75° (including the endpoint angles), preferably, the angle range of the acute angle may be set between 30°-60° (including the endpoint angles), for example, 30°, 35°, 40°, 45°, 50°, 55°, 60°, 65°, 70°, 75°, etc.

[0064] In some other embodiments, the third module unit is arranged perpendicular to the first module unit and the second module unit, that is, the third cooling plate 3 is perpendicular to the first cooling plate 1 and the second cooling plate 2, and the thickness direction is the first direction. The first module unit and the second module unit are located on both sides of the third module unit in the first direction and are symmetrically arranged, that is, in the first direction, not only the first cooling plate 1 and the second cooling plate 2 are symmetrical with respect to the third cooling plate 3, but also the second connection row for electrical connection between the three module units is symmetrical with respect to the third cooling plate 3. The three module units are arranged in a T-shape, with a compact and symmetrical structure, the current transmission rate in different power units is consistent, and the overall performance is more stable and excellent.

[0065] Further, in a preferred embodiment, the busbar plate 7 is located on the side of the first cooling plate 1 and the second cooling plate 2 away from the third cooling plate 3 in the second direction, and the busbar plate 7 is parallel or substantially parallel to the first cooling plate 1 and the second cooling plate 2, that is, the thickness direction of the main board 71 of the busbar plate 7 (that is, the area for connecting the capacitor) is consistent or substantially consistent with the thickness direction of the first cooling plate 1 and the second cooling plate 2, both in the second direction. The capacitor is located on the side of the busbar plate 7 away from the first cooling plate 1 and the second cooling plate 2. With such an arrangement, the busbar plate 7 and the first module unit and the second module unit are stacked together, with a compact structure and a tight arrangement; and the two ends of the busbar plate 7 in the first direction are respectively adjacent to the first ends of the first module unit and the second module unit, and can be electrically connected through the conductive column 8 and the first connecting row 9, with a short distance, a short connecting row size, and a small stray inductance resistance.

[0066] The busbar plate 7 is arranged in parallel with the first module unit and the second module unit, the capacitor is arranged on the side of the busbar plate 7 away from the two module units, and the third module unit is arranged perpendicular to the first module unit and the second module unit. Then, the entire IGBT power module is in a regular T-shape and has a symmetrical structure in the first direction. In this way, not only is the structure compact and tightly arranged, but the structure is also symmetrical, the current transmission rate in different power units is consistent, and the overall performance is more stable and better.

[0067] The following describes the configuration of the IGBT device group.

[0068] In some embodiments, there may be one IGBT device group in each of the first module unit, the second module unit, and the third module unit, and the three IGBT device groups in the three module units are electrically connected to form a power unit. In this way, the cooling and heat dissipation performance is significant, and it can be applied to some high-temperature environments to meet high heat dissipation requirements. Moreover, the IGBT device groups in the first module unit and the second module unit are both located on the side of the cooling plate away from the busbar plate 7 toward the third cooling plate 3, that is, a group of IGBT device groups are arranged on the side of the first cooling plate 1 and the second cooling plate 2 away from the busbar plate 7 toward the third cooling plate 3, and the IGBT device group on the third cooling plate 3 can be arranged on any side in the thickness direction of the third cooling plate 3.

[0069] In some other embodiments, as shown in the accompanying drawings, which are also preferred embodiments provided by the present application, two groups of IGBT device groups are provided in the first module unit, the second module unit and the third module unit, such as the first module unit is provided with two groups of first IGBT device groups 4, the second module unit is provided with two groups of second IGBT device groups 5, and the third module unit is provided with two groups of third IGBT device groups 6. The six groups of IGBT device groups in the three module units are electrically connected to form two power units. With such an arrangement, the IGBT power module has high power on the basis of good heat dissipation, or in other words, the high-power IGBT power module has good heat dissipation performance through reasonable arrangement, and the arrangement is compact, the connection ends of each IGBT device group are arranged adjacent to each other, the stray inductance resistance is low, and the conversion efficiency is high.

[0070] Specifically, the first IGBT device group A 4' and the second IGBT device group A 5' are respectively arranged on both side surfaces in the thickness direction of the first cooling plate 1, the first IGBT device group B 4" and the second IGBT device group B 5" are respectively arranged on both side surfaces in the thickness direction of the second cooling plate 2, and the third IGBT device group A 6' and the third IGBT device group B 6" are respectively arranged on both side surfaces in the thickness direction of the third cooling plate 3. Among them, the third IGBT device group A 6' is located on the side of the third cooling plate 3 facing the first cooling plate 1, and the third IGBT device group B 6" is located on the side of the third cooling plate 3 facing the second cooling plate 2. The first IGBT device group A 4' and the second IGBT device group A 5' are electrically connected to the third IGBT device group A 6' to form a power unit; the first IGBT device group B 4" and the second IGBT device group B 5" are electrically connected to the third IGBT device group B 6" to form a power unit. The two power units are symmetrically arranged in the first direction, have the same current transmission rate, and the overall performance of the IGBT power module is excellent.

[0071] In some other embodiments, two groups of IGBT device groups are provided in the first module unit, the second module unit and the third module unit, and two cooling plates are provided in the first module unit and the second module unit. For example, the first module unit includes two cooling plates arranged in a stacked manner, namely the first cooling plate 1 and the fourth cooling plate. The fourth cooling plate can be located on the side of the first cooling plate 1 away from the busbar plate 7, and the two groups of IGBT device groups are distributed on the board surfaces opposite to the first cooling plate 1 and the fourth cooling plate, such as the first IGBT device group A 4' is provided on the side of the first cooling plate 1 facing the fourth cooling plate, and the second IGBT device group A 5' is provided on the side of the fourth cooling plate facing the first cooling plate 1. Similarly, the second module unit includes a second cooling plate 2 and a fifth cooling plate located on the side of the second cooling plate 2 away from the busbar plate 7. The second cooling plate 2 and the fifth cooling plate are stacked in the second direction and have a spacing. The two groups of IGBT device groups are distributed on the board surfaces opposite to the second cooling plate 2 and the fifth cooling plate. A first IGBT device B group 4" is arranged on the side of the second cooling plate 2 facing the fifth cooling plate, and a second IGBT device B group 5" is arranged on the side of the fifth cooling plate facing the second cooling plate 2. A third IGBT device A group 6' and a third IGBT device B group 6" are arranged on both sides of the third cooling plate 3 in the thickness direction. The third IGBT device A group 6' is located on the side of the third cooling plate 3 facing the first cooling plate 1, and the third IGBT device B group 6" is located on the side of the third cooling plate 3 facing the second cooling plate 2. The first IGBT device A group 4' and the second IGBT device A group 5' are electrically connected to the third IGBT device A group 6' to form a power unit; the first IGBT device B group 4" and the second IGBT device B group 5" are electrically connected to the third IGBT device B group 6" to form a power unit. The two power units are also symmetrically arranged in the first direction, with the same current transmission rate, and the number of cooling plates is increased, the heat dissipation performance is improved, and it is suitable for high temperature environment.

[0072] The electrical connection settings of the IGBT power module are explained below.

[0073] The two ends of the busbar board 7 in the first direction are connecting plates 72, and the rest are main boards 71. The two connecting plates 72 are electrically connected to the first module unit and the second module unit respectively through two first connecting bars 9. For example, the connecting plate 72 at one end of the busbar board 7 in the first direction is electrically connected to the first module unit through one busbar board 7, and the connecting plate 72 at the other end is electrically connected to the second module unit through another busbar board 7. The first connecting bars 9 and the connecting plates 72 are arranged one to one, and the two groups of first connecting bars 9 and connecting plates 72 are arranged symmetrically.

[0074] In some embodiments, Figure 1As shown, the busbar plate 7 is flat as a whole, the connecting plate 72 and the main board 71 are arranged along the first direction, the connecting plate 72 and the first connecting row are arranged one-to-one, and a corresponding set of connecting plates 72 and the first connecting row 9 are stacked in the second direction, which belongs to a basically parallel stacked arrangement structure. At the same time, the connecting plate 72 can be directly connected to the first connecting row 9, such as welding, or can be connected by fasteners such as screws, or can be connected by conductive columns 8, such as the connecting plate 72 is connected to the side of the module unit with a conductive column 8, and the conductive column 8 extends along the second direction and is connected to the first connecting row 9.

[0075] In such an embodiment, the first connection row 9 may include three bent sections connected in sequence, namely, a first A bent section 91a connected to the IGBT device group and along the first direction, a second A bent section 92a arranged along the second direction, and a third A bent section 93a arranged along the first direction and connected to the conductive column 8 or the connecting plate 72. Such an arrangement not only makes the structure regular, but also shortens the size of the first connection row 9.

[0076] Preferably, the main board 71 and the connecting plates 72 on both sides thereof are an integrated structure, an integrated arrangement, that is, a single plate body, to simplify the structure and improve the structural strength; of course, the main board 71 and the connecting plates 72 on both sides thereof can also be a split arrangement, that is, the three plates can be connected by welding or the like to form a busbar plate 7.

[0077] In some other embodiments, the connecting plate 72 is arranged at an angle with the main plate 71 and extends toward the module unit and is close to the module unit. That is, of the two connecting plates 72, the connecting plate 72 located on the same side of the third cooling plate 3 as the first cooling plate 1 extends toward the direction close to the first cooling plate 1, and the other connecting plate 72 extends toward the direction close to the second cooling plate 2.

[0078] Optionally, the angle between the connecting plate 72 and the main board 71 is 90°. That is, the connecting plate 72 is perpendicular to the main board 71 and is arranged along the second direction, and the connecting plate 72 and the first connecting row 9 are stacked along the first direction. Figure 6 and Figure 7 The connecting plate 72 and the first connecting row 9 can be connected by the conductive pillars 8 arranged along the first direction (as shown in FIG. Figure 6 As shown), it can also be connected by screws (as Figure 7 As shown), it can also be welding.

[0079] Further, in the embodiment where the connection plate 72 is bent relative to the main board 71, the first connection row 9 may be L-shaped, including two bent sections connected in sequence, such as the first B bent section 91b connected to the IGBT device group and arranged along the first direction and the second B bent section 92b connected to the busbar plate 7 and arranged along the second direction. With such an arrangement, compared with the design of three bent sections in the above embodiment, the distance between the connection of the busbar plate 7 and the connection end of the module unit is closer, the required size of the first connection row 9 is shorter, and the stray inductance resistance can be reduced to a greater extent.

[0080] Optionally, the angle between the first B bending section 91b and the second B bending section 92b is greater than or equal to 75° and less than or equal to 135°. In this way, the first connecting row 9 can be prevented from being bent significantly, and its service life can be extended.

[0081] Preferably, the angle between the first B bending section 91b and the second B bending section 92b is 90°, which can improve the structural strength and stability of the first connecting row 9, reduce the shaking between components, and thus reduce stray inductance and current fluctuation.

[0082] In addition, the angle between the first B bending section 91b and the second B bending section 92b can also be any value among 80°, 85°, 95°, 100°, 115°, 120°, 125°, and 130°.

[0083] When there are IGBT device groups on both sides of the first cooling plate 1 and the second cooling plate 2, the first connecting row 9 includes two groups of rows, which are respectively located on both sides of the same cooling plate in the thickness direction and are both connected to the IGBT device group and the connecting plate 72 (described in detail below). The rows used on both sides of the same cooling plate can be symmetrically arranged and have the same size. Figure 6 As shown, the rows used on both sides of the same cooling plate can be folded toward each other, and the projections of the second B bending sections 92b in the second direction partially overlap, or, as shown in FIG. Figure 7 As shown, the rows used on both sides of the same cooling plate can be arranged in reverse, and the second B bending sections 92b do not overlap and have intervals in the second direction.

[0084] Alternatively, the angle between the connecting plate 72 and the main plate 71 may be any angle greater than 90° and less than 180°, and suitably, may be between 100°-165°, and preferably between 120°-150°, for example, 135°.

[0085] In detail, the busbar plate 7 is a laminated copper busbar, including a P-pole plate, an O-pole plate and an N-pole plate. The first connecting bar 9 is also a laminated copper busbar, including a P-pole copper busbar plate, an O-pole copper busbar plate and an N-pole copper busbar plate. The O-pole copper busbar plate further includes a first O-pole copper busbar sub-plate and a second O-pole copper busbar sub-plate. The two ends of the P-pole copper busbar plate and the first O-pole copper busbar sub-plate are respectively connected to the first IGBT device group 4 and the busbar plate 7, and the N-pole copper busbar plate and the second O-pole copper busbar sub-plate are respectively connected to the second IGBT device group 5 and the busbar plate 7. The first end of the first O-pole copper busbar sub-plate is connected to the first end of the first IGBT device group 4, the first end of the second O-pole copper busbar sub-plate is connected to the first end of the second IGBT device group 5, the second end of the first O-pole copper busbar sub-plate is connected in contact with the second end of the second O-pole copper busbar sub-plate to form an integral O-pole connecting portion, and the O-pole connecting portion is connected to the O-pole plate of the busbar plate 7 through the first conductive column 8. One end of the P-pole copper busbar is connected to the first end of the first IGBT device group 4, and the other end is connected to the P-pole plate of the busbar plate 7 through the second conductive column 8. One end of the N-pole copper busbar is connected to the first end of the second IGBT device group 5, and the other end is connected to the N-pole plate of the busbar plate 7 through the third conductive column 8.

[0086] When a group of IGBT device groups are respectively provided on both sides of the first cooling plate 1 and the second cooling plate 2 in the thickness direction, the P-pole copper bar plate and the first O-pole copper bar plate are symmetrically arranged with the N-pole copper bar plate and the second O-pole copper bar plate in the second direction, and both include the above-mentioned two sequentially connected bending sections or three sequentially connected bending sections.

[0087] For example, Figure 1 , Figure 3 As shown, the first connection row 9 includes three bending sections connected in sequence, namely a first bending section connected to the IGBT device group and along the first direction, a second bending section arranged along the second direction, and a third bending section arranged along the first direction and connected to the conductive column 8.

[0088] The connection between the first connection row 9 and the busbar plate 7 is actually the connection with the conductive column 8, which can be detachably connected by fasteners such as screws or bolts. In the second direction, the side of the first connection row 9 away from the conductive column 8 can form an operating space for the connection operation, which is convenient for disassembly and assembly. Of course, in other embodiments, the connection between the first connection row 9 and the conductive column 8 can also be welded or plugged in through a plug-in structure. For example, a plug-in slot (plug-in slot or plug-in hole, the same below) is provided on the conductive column 8 or the first connection row 9 for the other to be inserted for contact and connection.

[0089] The connection between the first connection row 9 and the IGBT device group is preferably connected in a detachable manner by fasteners such as screws or bolts. Both sides of the first cooling plate 1 and the second cooling plate 2 in the thickness direction can provide disassembly and assembly operation space. In actual production, the first connection row 9 can be connected to the IGBT device group first, and then connected to the conductive column 8. Alternatively, in other embodiments, the connection between the first connection row 9 and the IGBT device group can also be welded or plugged through a plug-in structure, such as the first end of the IGBT device group is connected to a copper bar with a plug-in slot (such as a hollow copper bar welded on the pin or connected by fasteners such as screws), and the end of the first connection row 9 is inserted into the plug-in slot and is in contact with the copper bar, so as to be connected to the pin of the IGBT device group.

[0090] The first module unit and the second module unit are electrically connected to the third module unit through two second connection bars, respectively. The two second connection bars are recorded as second connection bar ' and second connection bar ", the first module unit is electrically connected to the third module unit through one second connection bar ', and the second module unit is electrically connected to the third module unit through the second connection bar ".

[0091] Specifically, when the first module unit is provided with two groups of IGBT device groups, such as the first IGBT device group A 4' and the second IGBT device group A 5', the second module unit is provided with two groups of IGBT device groups, such as the first IGBT device group B 4", and the second IGBT device group B 5", and the third module unit is provided with two groups of IGBT device groups, such as the third IGBT device group A 6' and the third IGBT device group B 6", the second connection row ' includes the A connection row 10 and the B connection row 11; the second connection row " includes the C connection row 12 and the D connection row 13.

[0092] The first IGBT device group A 4' is electrically connected to the third IGBT device group A 6' via the A connection row 10, the second IGBT device group A 5' is electrically connected to the third IGBT device group A 6' via the B connection row 11, the first IGBT device group B 4" is electrically connected to the third IGBT device group B 6" via the C connection row 12, and the second IGBT device group B 5" is electrically connected to the third IGBT device group B 6" via the D connection row 13.

[0093] like Figure 1As shown, the A connection bar 10 and the C connection bar 12 are symmetrically arranged in the first direction, and the B connection bar 11 and the D connection bar 13 are symmetrically arranged in the first direction. The A connection bar 10 and the B connection bar 11 are both connected to the first end of the third IGBT device group A 6', and the A connection bar 10 and the B connection bar 11 are arranged in opposite directions in the second direction. The C connection bar 12 and the D connection bar 13 are both connected to the first end of the third IGBT device group B 6", and the C connection bar 12 and the D connection bar 13 are arranged in opposite directions in the second direction.

[0094] In some embodiments, Figure 1 and Figure 5 As shown, the A connecting bar 10, the C connecting bar 12, the B connecting bar 11, and the D connecting bar 13 all include two bending sections connected in sequence, and all are L-shaped or quasi-L-shaped.

[0095] The second connection row (the above-mentioned A connection row 10, C connection row 12, B connection row 11, D connection row 13) is preferably connected to the third IGBT device group 6 by a detachable connection through fasteners such as screws or bolts. In actual production, the second connection row can be first connected to the third IGBT device group 6, and then connected to the first and second IGBT device groups.

[0096] Of course, in other embodiments, the connection between the second connection row and the pins of the third IGBT device group 6 can also be welded or plugged through a plug-in structure. For example, the first end of the third IGBT device group 6 is connected to a copper bar with a plug-in slot (such as a hollow copper bar welded on the pin or connected by a fastener such as a screw), and the end of the second connection row is inserted into the plug-in slot and connected to the copper bar, thereby connecting to the pins of the third IGBT device group 6.

[0097] Similarly, the connection between the second connection row and the first IGBT device group 4 and the second IGBT device group 5 is preferably detachably connected by fasteners such as screws or bolts. Both sides of the first cooling plate 1 and the second cooling plate 2 in the thickness direction can provide disassembly and assembly operation space. Alternatively, in other embodiments, welding or plug-in connection through a plug-in structure (which may be the same as the above-mentioned plug-in structure) can also be used.

[0098] In some embodiments, when the first end of the third IGBT device group A 6' is located on the center line in the thickness direction of the first module unit, that is, the center line of the pin of the first end in the second direction coincides or substantially coincides with the center line in the thickness direction of the first cooling plate 1, the lengths of the A connecting row 10 and the B connecting row 11 can be consistent or substantially consistent, thereby improving the consistency of the current transmission rate of the two IGBT device groups A and improving the electrical performance of the module.

[0099] Similarly, when the center line of the pins of the first end of the third IGBT device group B 6" in the second direction coincides or substantially coincides with the center line of the thickness direction of the second cooling plate 2, the lengths of the C connecting row 12 and the D connecting row 13 can be consistent or substantially consistent, thereby improving the consistency of the current transmission rate of the two IGBT device groups B and improving the electrical performance of the module.

[0100] The A connection bar 10, the B connection bar 11, the C connection bar 12, and the D connection bar 13 each include three sub-bars for three-phase connection of the circuit. Each sub-bar is arranged according to the above-mentioned bending structure.

[0101] The embodiment of the present application also provides an energy storage converter, including a cabinet and a DC fuse, a DC isolating switch, an IGBT power module, a reactor, an AC filter capacitor, and an AC circuit breaker arranged in the cabinet and connected in sequence. Among them, the power module is the IGBT power module described in any of the above embodiments. Therefore, the converter has the beneficial effects of the power modules in the above embodiments, which will not be repeated here.

[0102] The DC fuse, DC disconnect switch, IGBT power module, reactor, AC filter capacitor and AC circuit breaker are connected in sequence, that is, the input end of the DC fuse is connected to the external DC circuit through the DC input copper busbar, the output end of the DC fuse is connected to the DC disconnect switch, the output end of the DC disconnect switch is connected to the input end of the power module, that is, the input end of the busbar plate 7 to achieve connection with the DC capacitor, the DC capacitor is connected to the IGBT device group through the busbar plate 7 and the first connecting bar, and the output end of the IGBT device group is also the output end of the IGBT power module connected to the input end of the reactor through the total output busbar, the output end of the reactor is connected to the input end of the AC filter, the output end of the AC filter is connected to the input end of the AC circuit breaker, and the output end of the AC circuit breaker is connected to the AC output copper busbar to output AC power to the outside.

[0103] The input end of the reactor is connected to the total output busbar of the IGBT power module, and the reactor can be located on the side of the IGBT power module where the total output busbar is arranged in the second direction or on the side of the IGBT power module in the first direction. In this way, the connection is close and the length of the busbar required is short.

[0104] The basic principles of the present application are described above in conjunction with specific embodiments. However, it should be noted that the advantages, strengths, effects, etc. mentioned in the present application are only examples and not limitations, and it cannot be considered that these advantages, strengths, effects, etc. are required by each embodiment of the present application. In addition, the specific details disclosed above are only for the purpose of illustration and ease of understanding, not for limitation, and the above details do not limit the present application to being implemented by adopting the above specific details.

[0105] The components and devices involved in this application are only illustrative examples and are not intended to require or imply that they must be connected, arranged, and configured in the manner shown in the drawings. As will be appreciated by those skilled in the art, these components and devices can be connected, arranged, and configured in any manner. Words such as "including", "comprising", "having", etc. are open words, meaning "including but not limited to", and can be used interchangeably with them. The words "or" and "and" used here refer to the words "and / or" and can be used interchangeably with them, unless the context clearly indicates otherwise. The word "such as" used here refers to the phrase "such as but not limited to", and can be used interchangeably with it.

[0106] It should also be noted that in the device and apparatus of the present application, each component can be decomposed and / or reassembled, and such decomposition and / or reassembly should be regarded as an equivalent solution of the present application.

[0107] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects without departing from the scope of the present application. Therefore, the present application is not intended to be limited to the aspects shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

[0108] It should be understood that the qualifiers "first", "second", "third", etc. used in the description of the embodiments of the present application are only used to more clearly explain the technical solutions and cannot be used to limit the scope of protection of the present application.

[0109] The above description has been given for the purpose of illustration and description. In addition, this description is not intended to limit the embodiments of the present application to the forms disclosed herein. Although multiple example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, changes, additions and sub-combinations thereof.

[0110] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. An IGBT power module, characterized in that: The invention comprises a first module unit, a second module unit, a third module unit and a busbar plate connected with a capacitor, wherein the three module units each comprise a cooling plate and an IGBT device group located at least on one side surface of the cooling plate, and the first module unit and the second module unit are electrically connected to the third module unit respectively; The first cooling plate of the first module unit and the second cooling plate of the second module unit are arranged in parallel along a first direction; the third cooling plate of the third module unit is at least partially located on one side of the first cooling plate and the second cooling plate in the thickness direction.

2. The IGBT power module according to claim 1, characterized in that: The third cooling plate is arranged at an angle with the first cooling plate and the second cooling plate, and one end of the third cooling plate extends in a direction away from the first cooling plate and the second cooling plate.

3. The IGBT power module according to claim 1, characterized in that: One end of the third cooling plate is closer to one end of the first cooling plate and the second cooling plate that is close to or connected to the other end of the third cooling plate.

4. The IGBT power module according to claim 1, characterized in that: The multiple IGBT devices in the same IGBT device group in each module unit are arranged along the third direction.

5. The IGBT power module according to claim 1, characterized in that: The busbar plate is located on a side of the first cooling plate and the second cooling plate away from the third cooling plate.

6. The IGBT power module according to claim 1, characterized in that: The busbar plate is arranged in parallel with the first cooling plate and the second cooling plate.

7. The IGBT power module according to claim 1, characterized in that: In the first direction, the IGBT device group on the first cooling plate and the IGBT device group on the second cooling plate are distributed on both sides of the first end of the IGBT device group on the third cooling plate.

8. The IGBT power module according to claim 1, characterized in that: The third cooling plate is arranged at an acute angle with either the first cooling plate or the second cooling plate, and the angle range of the acute angle is 15°-75° 。 9. The IGBT power module according to claim 1 or 2, characterized in that: The third cooling plate is perpendicular to the first cooling plate and the second cooling plate; The first module unit and the second module unit are symmetrically arranged on both sides of the third module unit in a thickness direction.

10. The IGBT power module according to claim 1, characterized in that: The first cooling plate and the second cooling plate are connected; or, the first cooling plate and the second cooling plate are integrated into one structure to form an integral cooling plate.

11. The IGBT power module according to claim 1, characterized in that: The first cooling plate and the second cooling plate have a distance in the first direction, and one end of the third cooling plate in the second direction extends into the distance, and the other end is located on a side of the first cooling plate and the second cooling plate away from the busbar plate.

12. The IGBT power module according to claim 5, characterized in that: The busbar board includes a main board and connecting boards located at both ends of the main board in the first direction. The two connecting boards are electrically connected to the first module unit and the second module unit respectively through a first connecting row. The connecting boards and the first connecting row are arranged one to one and stacked in the second direction.

13. The IGBT power module according to claim 5, characterized in that: The busbar plate comprises a main board and connecting plates located on both sides of the main board in the first direction, wherein the connecting plates are arranged at an angle with the main board, wherein one of the connecting plates extends in a direction close to the first cooling plate, and the other of the connecting plates extends in a direction close to the second cooling plate; The two connection plates are electrically connected to the first module unit and the second module unit respectively through a first connection row.

14. The IGBT power module according to claim 13, characterized in that: The connecting plate is perpendicular to the main plate.

15. The IGBT power module according to claim 12, characterized in that: The first connection row includes two bent sections which are connected in sequence and arranged at an angle.

16. The IGBT power module according to claim 5, characterized in that: The first cooling plate and the second cooling plate are both provided with an IGBT device group on the side facing away from the busbar plate, and no IGBT device group is provided on the side facing the busbar plate.

17. The IGBT power module according to claim 1, characterized in that: The first IGBT device group and the second IGBT device group are respectively arranged on both side surfaces of the first cooling plate in the thickness direction, the first IGBT device group and the second IGBT device group are also respectively arranged on both side surfaces of the second cooling plate in the thickness direction, and a third IGBT device group is respectively arranged on both side surfaces of the third cooling plate in the thickness direction. The first IGBT device group and the second IGBT device group on the first cooling plate are electrically connected to one group of the third IGBT device groups, and the first IGBT device group and the second IGBT device group on the second cooling plate are electrically connected to another group of the third IGBT device groups.

18. The IGBT power module according to claim 1, characterized in that: The first module unit further includes a fourth cooling plate stacked and spaced apart from the first cooling plate, and a first IGBT device group and a second IGBT device group are respectively arranged on opposite plate surfaces of the first cooling plate and the fourth cooling plate; The second module unit further includes a fifth cooling plate stacked and spaced apart from the second cooling plate, and a first IGBT device group and a second IGBT device group are respectively arranged on opposite plate surfaces of the second cooling plate and the fifth cooling plate; A third IGBT device group is respectively arranged on both side surfaces of the third cooling plate in the thickness direction; The first IGBT device group and the second IGBT device group in the first module unit are electrically connected to one group of the third IGBT device group, and the first IGBT device group and the second IGBT device group in the second module unit are electrically connected to another group of the third IGBT device group.

19. An energy storage converter, characterized in that: It comprises a cabinet body and a DC fuse, a DC isolating switch, an IGBT power module, a reactor, an AC filter capacitor and an AC circuit breaker which are arranged in the cabinet body and connected in sequence. The IGBT power module is the IGBT power module according to any one of claims 1 to 18.

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