Circuit protection and anti-impact circuit in strong electromagnetic environment

Abstract

The invention relates to a circuit protection and anti-impact circuit in a strong electromagnetic environment. The circuit protection and anti-impact circuit in the strong electromagnetic environment comprises an SOI layer, a thick field oxide layer and a polycrystalline silicon resistance layer, wherein the SOI layer can reduce the leakage of current flowing into the circuit protection and anti-impact circuit in a strong electromagnetic environment, the thick field oxide layer can play a role in preventing breakdown, and the polycrystalline silicon resistance layer can consume a part of energy after flowing-in lightning stroke current signals pass through a resistor, so that the lightning stroke current signals can be prevented from entering the circuit protection and anti-impact circuit. A connected protected element can be protected through the SOI layer, the thick field oxide layer and the polycrystalline silicon resistance layer, and the lightning protection effect of circuit protection and an anti-impact circuit in a strong electromagnetic environment is improved.

Description

Technical Field

[0001] The present application relates to the technical field of lightning protection, and in particular to a circuit protection and anti-shock circuit in a strong electromagnetic environment. Background Art

[0002] With the rapid development of electronic technology, circuit equipment is increasingly used in various fields. However, in strong electromagnetic environments such as lightning strike areas, areas around high-voltage equipment, and areas with strong electromagnetic radiation, circuit equipment is easily impacted by electromagnetic pulses, which can cause damage to circuit equipment, data loss, or even the scrapping of circuit equipment. In traditional technologies, circuit equipment is protected by protective equipment such as filters and shielding covers, but the protection effect of such protective equipment in extremely strong electromagnetic environments is limited. Summary of the invention

[0003] Based on this, it is necessary to provide a circuit protection and anti-shock circuit in a strong electromagnetic environment that has a reliable protection effect in an extremely strong electromagnetic environment.

[0004] Provide a circuit protection and anti-shock circuit in a strong electromagnetic environment, including:

[0005] SOI layer;

[0006] A thick field oxide layer is formed on a first side of the SOI layer;

[0007] The polysilicon resistance layer includes a first resistance layer arranged on a side of the thick field oxide layer away from the SOI layer, a second resistance layer arranged on a side of the SOI layer away from the thick field oxide layer, and a resistance column penetrating the SOI layer and the thick field oxide layer, wherein the resistance column connects the first resistance layer and the second resistance layer;

[0008] The first resistance layer is used for accessing the lightning current signal, and the side of the SOI layer away from the thick field oxide layer is used for arranging the protected element, so that the second resistance layer is connected to the protected element.

[0009] In one embodiment, the circuit protection and anti-shock circuit under the strong electromagnetic environment further includes:

[0010] At least one level of protection circuit, the input end of the at least one level of protection circuit is connected to the second resistance layer, and the output end of the at least one level of protection circuit is used to connect to the protected element.

[0011] In one embodiment, the at least one level protection circuit comprises:

[0012] A first protection circuit, wherein an input end of the first protection circuit is connected to the second resistance layer, and the first protection circuit is used to disconnect when a voltage connected from the second resistance layer exceeds a preset voltage range, and to conduct when the voltage is within the preset voltage range;

[0013] The second protection circuit has an input end connected to the output end of the first protection circuit, and an output end of the second protection circuit is used to connect to the protected element.

[0014] In one embodiment, the first protection circuit comprises:

[0015] A high-voltage resistant transistor, wherein the first end of the high-voltage resistant transistor is connected to the second resistance layer, the second end of the high-voltage resistant transistor is used to connect to the second protection circuit, the third end of the high-voltage resistant transistor is grounded, and the high-voltage resistant transistor is used to disconnect when the voltage connected from the second resistance layer exceeds a preset voltage range, and to turn on when the voltage is within the preset voltage range.

[0016] In one embodiment, the second protection circuit comprises:

[0017] Gas discharge tube;

[0018] A suppression circuit, wherein the suppression circuit and the gas discharge tube are connected in parallel step by step between the output end of the first protection circuit and the protected element, and the suppression circuit is used to clamp the voltage of the protected element within a preset safety range;

[0019] The pulse breakdown voltage of the gas discharge tube is greater than the overshoot peak voltage of the suppression circuit.

[0020] In one embodiment, the suppression circuit comprises:

[0021] At least one TVS diode is provided, each TVS diode being connected in parallel with the gas discharge tube.

[0022] In one embodiment, when the suppression circuit includes a plurality of TVS diodes, different TVS diodes have different overshoot peak voltages.

[0023] In one embodiment, the first protection circuit further includes:

[0024] A clamping tube, wherein the negative electrode of the clamping tube is respectively connected to the second end of the high-voltage resistant transistor and the input end of the second protection circuit, and the positive electrode of the clamping tube is grounded.

[0025] In one embodiment, the circuit protection and anti-shock circuit under the strong electromagnetic environment further includes:

[0026] Resettable fuse: The resettable fuse is connected in series between the suppression circuit and the protected component.

[0027] In one embodiment, the circuit protection and anti-shock circuit under the strong electromagnetic environment further includes:

[0028] A clamping module is connected in parallel with the protected element, an input end of the clamping module is connected to the second resistance layer, and an output end of the clamping module is grounded.

[0029] The circuit protection and shock protection circuit under strong electromagnetic environment comprises an SOI layer, a thick field oxide layer and a polysilicon resistor layer; wherein the SOI layer can reduce the leakage of current flowing into the circuit protection and shock protection circuit under strong electromagnetic environment, the thick field oxide layer can play a role in preventing breakdown, and the polysilicon resistor layer can consume part of the energy of the incoming lightning current signal through the resistor. Therefore, the SOI layer, the thick field oxide layer and the polysilicon resistor layer can protect the connected protected components, thereby improving the lightning protection effect of the circuit protection and shock protection circuit under strong electromagnetic environment. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0031] Figure 1 This is one of the structural block diagrams of a circuit protection and anti-shock circuit in a strong electromagnetic environment according to an embodiment;

[0032] Figure 2 It is a structural block diagram of a first protection circuit and a second protection circuit of a circuit protection and anti-shock circuit in a strong electromagnetic environment according to an embodiment;

[0033] Figure 3 This is the second structural block diagram of a circuit protection and anti-shock circuit in a strong electromagnetic environment according to an embodiment of the present invention. DETAILED DESCRIPTION

[0034] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0036] It is understood that the terms "first", "second", etc. used in this application may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish a first element from another element. For example, without departing from the scope of this application, a first protection circuit may be referred to as a second protection circuit, and similarly, a second protection circuit may be referred to as a first protection circuit. Both the first protection circuit and the second protection circuit are protection circuits, but they are not the same protection circuit.

[0037] It can be understood that the “connection” in the following embodiments should be understood as “electrical connection”, “communication connection”, etc. if the connected circuits, modules, units, etc. have electrical signals or data transmission between each other.

[0038] It can be understood that “at least one” means one or more, “plurality” means two or more, and “at least a portion of an element” means a part or all of an element.

[0039] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. At the same time, the term "and / or" used in this specification includes any and all combinations of the relevant listed items.

[0040] In one embodiment, a circuit protection and shock protection circuit 10 for a strong electromagnetic environment is provided, comprising: a SOI (Silicon-On-Insulator) layer 102 , a thick field oxide layer 104 and a polysilicon resistance layer 106 .

[0041] The thick field oxide layer 104 is formed on a first side surface of the SOI layer 102 .

[0042] The polysilicon resistor layer 106 includes a first resistor layer 1062 disposed on the side of the thick field oxide layer 104 away from the SOI layer 102, a second resistor layer 1064 disposed on the side of the SOI layer 102 away from the thick field oxide layer 104, and a resistor column penetrating the SOI layer 102 and the thick field oxide layer 104, the resistor column connecting the first resistor layer and the second resistor layer.

[0043] The first resistance layer is used to access the lightning current signal, and the side of the SOI layer 102 away from the thick field oxide layer 104 is used to set the protected element 20 so that the second resistance layer is connected to the protected element 20 .

[0044] The SOI layer 102 can play an insulating role, thereby reducing the leakage of current and improving the safety of the circuit protection and shock protection circuit 10 in the strong electromagnetic environment. Furthermore, the SOI layer 102 can completely cover the surface of the circuit protection and shock protection circuit 10 in the strong electromagnetic environment, and only expose the pins or ports that must be connected to the external device, thereby improving the safety of the lightning protection circuit.

[0045] When the lightning current signal flows into the polysilicon resistor layer 106, the first resistor layer and the second resistor layer of the polysilicon resistor layer 106 can limit the current of the lightning current signal, and the thick field oxide layer 104 can play an anti-breakdown role, thereby ensuring that no breakdown occurs between the end receiving the lightning current signal and the ground end, thereby protecting the protected element 20.

[0046] The thicker the thick field oxide layer 104 is, the stronger its anti-breakdown capability is. Therefore, the thickness of the thick field oxide layer 104 can be determined according to the lightning current in the application environment of the circuit protection and anti-shock circuit 10 in a strong electromagnetic environment.

[0047] Furthermore, the thick field oxide layer 104 can cover the entire surface of the circuit protection and anti-shock circuit 10 in a strong electromagnetic environment, leaving only the pins or ports that must be connected to external devices exposed, thereby improving the anti-breakdown capability of the lightning protection circuit.

[0048] Therefore, the circuit protection and shock protection circuit 10 under strong electromagnetic environment comprises an SOI layer 102, a thick field oxide layer 104 and a polysilicon resistor layer 106; wherein, the SOI layer 102 can reduce the leakage of the current flowing into the circuit protection and shock protection circuit 10 under strong electromagnetic environment, the thick field oxide layer 104 can play a role in preventing breakdown, and the polysilicon resistor layer 106 can consume part of the energy of the incoming lightning current signal through the resistor. Therefore, the SOI layer 102, the thick field oxide layer 104 and the polysilicon resistor layer 106 can protect the connected protected element 20, thereby improving the lightning protection effect of the circuit protection and shock protection circuit 10 under strong electromagnetic environment.

[0049] In one embodiment, the circuit protection and anti-shock circuit 10 under strong electromagnetic environment further includes: at least one level protection circuit.

[0050] The input end of at least one level of protection circuit is connected to the second resistance layer, and the output end of at least one level of protection circuit is used to connect to the protected element 20 .

[0051] The protection circuit may be a circuit for consuming or storing the inflowing electric energy, thereby reducing the current flowing into the protected element 20; the protection circuit may also be a circuit for clamping the voltage applied to both ends of the protected element 20 to a certain safe voltage range. The protection circuit may also be other circuits capable of limiting the current flowing into the protected element 20, or limiting the voltage applied to the protected element 20, so as to protect the connected protected element 20.

[0052] In one embodiment, Figure 2 As shown, the at least one level of protection circuit mentioned above includes: a first protection circuit 108 and a second protection circuit 110 .

[0053] The input end of the first protection circuit 108 is connected to the second resistance layer. The first protection circuit 108 is used to disconnect when the voltage input from the second resistance layer exceeds a preset voltage range, and to conduct when the voltage is within the preset voltage range.

[0054] An input end of the second protection circuit 110 is connected to an output end of the first protection circuit 108 , and an output end of the second protection circuit 110 is used to connect to the protected element 20 .

[0055] When the voltage connected from the second resistance layer is within a preset voltage range, the first protection circuit 108 is normally turned on and transmits the electrical signal to the second protection circuit 110. The second protection circuit 110 is correspondingly turned on normally to output a voltage within a safe voltage range to the protected element 20, thereby enabling the protected element 20 to be used normally.

[0056] When the voltage input from the second resistance layer exceeds the preset voltage range, the first protection circuit 108 is disconnected, and the second protection circuit 110 is used to process the current flowing into the second protection circuit 110 before the first protection circuit 108 is disconnected, so as to avoid excessive impact current or excessively high voltage from burning the protected element 20 connected to the rear stage of the second protection circuit 110, thereby improving the reliability of the circuit protection and anti-impact circuit 10 in a strong electromagnetic environment.

[0057] In one embodiment, Figure 2 As shown, the first protection circuit 108 includes: a high-voltage resistant transistor 1082 .

[0058] The first end of the high-voltage resistant transistor 1082 is connected to the second resistance layer, the second end of the high-voltage resistant transistor 1082 is used to connect to the second protection circuit 110, the third end of the high-voltage resistant transistor 1082 is grounded, and the high-voltage resistant transistor 1082 is used to disconnect when the voltage connected from the second resistance layer exceeds the preset voltage range, and to turn on when the voltage is within the preset voltage range.

[0059] The high-voltage transistor 1082 is set to work in a linear region within a preset voltage range to ensure that the input electrical signal is transmitted to the subsequent circuit without distortion. The upper limit of the preset voltage range may be the withstand voltage limit of the circuit protection and anti-shock circuit 10 under a strong electromagnetic environment, and the lower limit of the preset voltage range may be the minimum operating voltage of the circuit protection and anti-shock circuit 10 under a strong electromagnetic environment.

[0060] The above-mentioned withstand voltage limit value can be comprehensively determined according to the actual application environment and the current thick field oxide layer 104 .

[0061] Furthermore, the impedance value of the high-voltage resistant transistor 1082 can be determined based on multiple actual test results to determine a minimum impedance value, and ensure that the high-voltage resistant transistor 1082 can operate in a linear region under the minimum impedance value.

[0062] The high voltage resistant transistor 1082 may be a junction field effect transistor.

[0063] In one embodiment, the second protection circuit 110 includes: a gas discharge tube 1102 and a suppression circuit.

[0064] The suppression circuit and the gas discharge tube 1102 are connected in parallel step by step between the output end of the first protection circuit 108 and the protected element 20. The suppression circuit is used to clamp the voltage of the protected element 20 within a preset safety range. The preset safety range can be determined according to the safe voltage of the protected element 20 when it is working, so as to ensure the safety of the protected element 20.

[0065] The pulse breakdown voltage of the gas discharge tube 1102 is greater than the overshoot peak voltage of the suppression circuit.

[0066] Since the pulse breakdown voltage of the gas discharge tube 1102 is greater than the overshoot peak voltage of the suppression circuit, when a voltage exceeding the preset safety range is applied to the second protection circuit 110, the gas discharge tube 1102 will operate before the suppression circuit to introduce excess current into the ground by conduction, thereby effectively limiting the voltage rise rate and voltage peak and avoiding breakdown of the protected component 20.

[0067] When the gas discharge tube 1102 is broken down, the excess current can flow into the ground through the suppression circuit, thereby preventing the protected element 20 from being broken down, thereby improving the reliability of the circuit protection and anti-shock circuit 10 in a strong electromagnetic environment.

[0068] When the voltage applied to the protected element 20 is lower than the lower limit of the preset safety range, the gas discharge tube 1102 is cut off, and the electrical signal directly flows into the protected element 20 to make the protected element 20 work.

[0069] The pulse breakdown voltage of the gas discharge tube 1102 may be more than 1.5 times greater than the overshoot peak voltage of the suppression circuit, thereby making the circuit protection and anti-shock circuit 10 more reliable in a strong electromagnetic environment.

[0070] In one embodiment, Figure 2 As shown, the suppression circuit includes: at least one transient suppression diode 1104 , each transient suppression diode 1104 is connected in parallel with a gas discharge tube 1102 .

[0071] The transient voltage suppressor diode 1104 has a short response time and a low clamping voltage, and can further guide the excess current into the ground, thereby protecting the protected element 20 .

[0072] Furthermore, when setting the physical layout and connection method of the transient suppression diode 1104 and the gas discharge tube 1102, the actual application scenario should be combined to minimize the parasitic capacitance between them to avoid unnecessary attenuation or phase shift of the incoming high-frequency signal, thereby ensuring the quality of electrical signal transmission.

[0073] In one embodiment, when the suppression circuit includes a plurality of TVS diodes 1104 , different TVS diodes 1104 have different overshoot peak voltages.

[0074] When the overshoot peak voltages of multiple transient suppression diodes 1104 are different, the number of transient suppression diodes 1104 that are turned on can be increased according to the gradual increase of the voltage applied to the protected element 20 to increase the rate of discharging discharge energy and improve the safety of the circuit protection and anti-shock circuit 10 in a strong electromagnetic environment.

[0075] For example, when there are three transient suppression diodes 1104, the overshoot peak voltage (U1) of the first transient suppression diode 1104 may be greater than or equal to the voltage across the ends of the transient suppression diode 1104 when it is normally turned on (U G ), the overshoot peak voltage (U2) of the second transient suppression diode 1104 can be any value greater than the overshoot peak voltage of the first transient suppression diode 1104, and the overshoot peak voltage (U3) of the third transient suppression diode 1104 can be any value greater than the overshoot peak voltage of the second transient suppression diode 1104. Specifically, the relationship between the above voltages can be: U1≥1.5U G , U2≥3U1, U3≥3U2.

[0076] In one embodiment, the first protection circuit 108 further includes a clamping tube 1084 .

[0077] The cathode of the clamp tube 1084 is connected to the second end of the high voltage transistor 1082 and the input end of the second protection circuit 110 respectively, and the anode of the clamp tube 1084 is grounded.

[0078] Before the high-voltage transistor 1082 is disconnected, the clamping tube 1084 can be used to discharge a portion of the excess electrical energy, thereby enhancing the reliability of the circuit protection and anti-shock circuit 10 in a strong electromagnetic environment.

[0079] In one embodiment, the circuit protection and shock protection circuit 10 under strong electromagnetic environment further includes: a recoverable fuse 112 .

[0080] The resettable fuse 112 is connected in series between the suppression circuit and the protected component 20 .

[0081] When the voltage (UP) applied to the resettable fuse 112 is greater than the over-peak voltage of the suppression circuit (when the suppression circuit includes multiple transient suppression diodes 1104, the voltage applied to the resettable fuse 112 is greater than the maximum value of the over-peak voltages of each transient suppression diode 1104), the resettable fuse 112 is blown, and the electrical signal is no longer transmitted to the protected component 20, thereby ensuring the safety of the protected component 20.

[0082] Among them, it can be set to UP≥10U1.

[0083] The restorable fuse 112 may include a specially treated polymer resin and conductive particles distributed in the polymer resin. Under a safe voltage, the polymer resin tightly binds the conductive particles outside the crystalline structure to form a chain-like conductive electrical path. At this time, the restorable fuse 112 is in a low resistance state, and the current flowing through the restorable fuse 112 is small. The heat energy generated by the small current is small and will not change the crystal structure. When a short circuit or overload occurs in the line (that is, UP is greater than the over-peak voltage of the suppression circuit), the current flowing through the restorable fuse 112 increases. The increased large current generates heat, causing the polymer resin to melt, and the volume of the restorable fuse 112 increases rapidly, forming a high resistance state, and then the current flowing through the restorable fuse 112 decreases rapidly, thereby achieving protection of the protected element 20.

[0084] In one embodiment, Figure 3 As shown, the circuit protection and shock prevention circuit 10 under strong electromagnetic environment further includes: a clamping module 114 .

[0085] The clamping module 114 is connected in parallel with the protected element 20 , an input end of the clamping module 114 is connected to the second resistance layer, and an output end of the clamping module 114 is grounded.

[0086] The clamping module 114 can be connected before the first protection circuit 108, between the first protection circuit 108 and the second protection circuit 110, or after the second protection circuit 110, thereby improving the performance of the circuit protection and anti-shock circuit 10 in a strong electromagnetic environment.

[0087] The clamping module 114 may be any circuit that can implement a clamping function to ensure that the current input to the protected device is within a safe range. Exemplarily, the clamping module 114 may include a plurality of varistors connected in series and / or in parallel, and may also include a plurality of transient suppression diodes 1104 connected in parallel.

[0088] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic description of the above terms does not necessarily refer to the same embodiment or example.

[0089] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0090] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A circuit protection and anti-shock circuit in a strong electromagnetic environment, characterized in that: include: SOI layer; A thick field oxide layer, wherein the thick field oxide layer is formed on a first side of the SOI layer; The polysilicon resistance layer comprises a first resistance layer arranged on a side of the thick field oxide layer away from the SOI layer, a second resistance layer arranged on a side of the SOI layer away from the thick field oxide layer, and a resistance column penetrating the SOI layer and the thick field oxide layer, wherein the resistance column connects the first resistance layer and the second resistance layer; The first resistance layer is used for receiving a lightning current signal, and a side of the SOI layer away from the thick field oxide layer is used for arranging a protected element, so that the second resistance layer is connected to the protected element.

2. The circuit protection and anti-shock circuit in a strong electromagnetic environment according to claim 1, characterized in that: The circuit protection and anti-shock circuit in the strong electromagnetic environment also includes: At least one level of protection circuit, the input end of the at least one level of protection circuit is connected to the second resistance layer, and the output end of the at least one level of protection circuit is used to connect to the protected element.

3. The circuit protection and anti-shock circuit in a strong electromagnetic environment according to claim 2, characterized in that: The at least one level protection circuit comprises: a first protection circuit, wherein an input end of the first protection circuit is connected to the second resistance layer, and the first protection circuit is used to disconnect when a voltage connected from the second resistance layer exceeds a preset voltage range, and to conduct when the voltage is within the preset voltage range; A second protection circuit, wherein the input end of the second protection circuit is connected to the output end of the first protection circuit, and the output end of the second protection circuit is used to connect to the protected element.

4. The circuit protection and anti-shock circuit in a strong electromagnetic environment according to claim 3, characterized in that: The first protection circuit comprises: A high-voltage resistant transistor, wherein the first end of the high-voltage resistant transistor is connected to the second resistance layer, the second end of the high-voltage resistant transistor is used to connect to the second protection circuit, the third end of the high-voltage resistant transistor is grounded, and the high-voltage resistant transistor is used to disconnect when the voltage connected from the second resistance layer exceeds a preset voltage range, and to turn on when the voltage is within the preset voltage range.

5. The circuit protection and shock prevention circuit in a strong electromagnetic environment according to claim 3, characterized in that: The second protection circuit comprises: Gas discharge tube; A suppression circuit, wherein the suppression circuit and the gas discharge tube are connected in parallel between the output end of the first protection circuit and the protected element step by step, and the suppression circuit is used to clamp the voltage of the protected element within a preset safety range; The pulse breakdown voltage of the gas discharge tube is greater than the overshoot peak voltage of the suppression circuit.

6. The circuit protection and anti-shock circuit in a strong electromagnetic environment according to claim 5, characterized in that: The suppression circuit comprises: At least one transient suppression diode is provided, each transient suppression diode being connected in parallel with the gas discharge tube.

7. The circuit protection and anti-shock circuit in a strong electromagnetic environment according to claim 6, characterized in that: In the case that the suppression circuit includes a plurality of the TVS diodes, different TVS diodes have different overshoot peak voltages.

8. The circuit protection and shock prevention circuit in a strong electromagnetic environment according to claim 4, characterized in that: The first protection circuit further includes: A clamping tube, wherein the cathode of the clamping tube is respectively connected to the second end of the high-voltage resistant transistor and the input end of the second protection circuit, and the anode of the clamping tube is grounded.

9. The circuit protection and shock prevention circuit in a strong electromagnetic environment according to claim 5, characterized in that: The circuit protection and anti-shock circuit in the strong electromagnetic environment also includes: A resettable fuse is connected in series between the suppression circuit and the protected element.

10. The circuit protection and shock prevention circuit in a strong electromagnetic environment according to claim 1, characterized in that: The circuit protection and anti-shock circuit in the strong electromagnetic environment also includes: A clamping module is connected in parallel with the protected element, an input end of the clamping module is connected to the second resistance layer, and an output end of the clamping module is grounded.

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