LED epitaxial structure, preparation method thereof and electronic equipment

Abstract

The invention provides an LED epitaxial structure, a preparation method thereof and electronic equipment, and relates to the technical field of semiconductor light-emitting devices. The epitaxial structure includes a substrate; the first type semiconductor layer, the first multi-quantum well layer, the relative light intensity adjusting layer, the second multi-quantum well layer and the second type semiconductor layer are located on one side of the substrate; the band gap widths of the first multi-quantum well layer and the second multi-quantum well layer are different; the relative light intensity adjusting layer is used for adjusting the effective composite phase proportion of the band gap of the first multi-quantum well layer and the band gap of the second multi-quantum well layer. The dual-band light-emitting effect of the LED epitaxial structure is achieved through the first multi-quantum well layer and the second multi-quantum well layer which are different in band gap width, and meanwhile the effective composite phase proportion of the band gap of the first multi-quantum well layer and the band gap of the second multi-quantum well layer is adjusted through the relative light intensity adjusting layer. The purpose of adjusting the light intensity relative proportion of the first multi-quantum well layer and the second multi-quantum well layer is achieved, and finally the purpose of improving the color gamut of the application end electronic equipment is achieved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor light emitting devices, and more specifically, to an LED epitaxial structure and a preparation method thereof and an electronic device. Background Art

[0002] Light-Emitting Diode (LED) has the advantages of small size, high efficiency and energy saving, and long service life, so it has been widely used. Display backlight is an important application direction of LED. As people's pursuit of electronic products continues to improve, the requirements for the color gamut of display screens are also getting higher and higher. Traditional backlights made of single blue LED chips can only achieve a medium color gamut. If a combination of multiple LED chips of different colors is used to make a backlight, although the color gamut of the backlight can be improved, the complexity and cost of the circuit design on the application side will increase. Summary of the invention

[0003] In view of this, the present application provides an LED epitaxial structure, a preparation method thereof, and an electronic device, which effectively solves the technical problems existing in the prior art, and realizes the dual-band luminescence effect of the LED epitaxial structure through a first multi-quantum well layer and a second multi-quantum well layer with different band gap widths. At the same time, the effective composite phase ratio of the band gap of the first multi-quantum well layer and the band gap of the second multi-quantum well layer is adjusted through a relative light intensity modulation layer, so as to adjust the relative ratio of the light intensity of the first multi-quantum well layer and the second multi-quantum well layer, and finally achieve the purpose of improving the color gamut of the electronic device at the application end.

[0004] To achieve the above objectives, the technical solutions provided by this application are as follows:

[0005] An LED epitaxial structure, comprising:

[0006] substrate;

[0007] A first type semiconductor layer, a first multi-quantum well layer, a relative light intensity modulation layer, a second multi-quantum well layer, and a second type semiconductor layer are located on one side of the substrate and are sequentially stacked and grown in a direction perpendicular to the plane where the substrate is located;

[0008] The band gap widths of the first multi-quantum well layer and the second multi-quantum well layer are different;

[0009] The relative light intensity adjustment layer is used to adjust the effective composite phase ratio of the band gap of the first multi-quantum well layer and the band gap of the second multi-quantum well layer.

[0010] Optionally, the first multi-quantum well layer includes:

[0011] An InxGa(Ix)N quantum well layer and a first GaN quantum barrier layer are grown alternately in sequence, wherein the number of growth cycles of the first multi-quantum well layer ranges from 1 to 4.

[0012] Optionally, the thickness of the InxGa(Ix)N quantum well layer is in the range of 2-3nm;

[0013] The thickness of the first GaN quantum barrier layer is in the range of 10-17 nm.

[0014] Optionally, the second multi-quantum well layer includes:

[0015] An InyGa(Iy)N quantum well layer and a second GaN quantum barrier layer are grown alternately in sequence, wherein the number of growth cycles of the second multi-quantum well layer ranges from 6 to 15.

[0016] Optionally, the thickness of the InyGa(Iy)N quantum well layer is in the range of 3-4 nm;

[0017] The thickness of the second GaN quantum barrier layer is in the range of 8-12 nm.

[0018] Optionally, the relative light intensity adjustment layer includes: a first GaN layer, an AlN layer and a second GaN layer grown in sequence.

[0019] Optionally, the thickness of the first GaN layer is in the range of 3-6 nm;

[0020] The thickness of the AlN layer is in the range of 2-5 nm;

[0021] The thickness of the second GaN layer is in the range of 10-15 nm.

[0022] Optionally, the LED epitaxial structure further includes:

[0023] a buffer layer between the substrate and the first type semiconductor layer;

[0024] and / or, a non-doped layer between the substrate and the first type semiconductor layer, wherein when the LED epitaxial structure includes the buffer layer, the non-doped layer is located between the buffer layer and the first type semiconductor layer;

[0025] and / or, a stress release layer between the first type semiconductor layer and the first multi-quantum well layer;

[0026] and / or, an electron blocking layer located between the second multi-quantum well layer and the second type semiconductor layer.

[0027] Based on the same inventive concept, the present application also provides a preparation method for preparing the above-mentioned LED epitaxial structure, the preparation method comprising:

[0028] providing a substrate;

[0029] On one side of the substrate and in a direction perpendicular to the plane where the substrate is located, a first type semiconductor layer, a first multi-quantum well layer, a relative light intensity modulation layer, a second multi-quantum well layer, and a second type semiconductor layer are sequentially grown in a stacked manner;

[0030] Wherein, the band gap widths of the first multi-quantum well layer and the second multi-quantum well layer are different;

[0031] The relative light intensity adjustment layer is used to adjust the effective composite phase ratio of the band gap of the first multi-quantum well layer and the band gap of the second multi-quantum well layer.

[0032] Based on the same inventive concept, the present application also provides an electronic device, which includes the above-mentioned LED epitaxial structure.

[0033] Compared with the prior art, the technical solution provided by this application has at least the following advantages:

[0034] The present application provides an LED epitaxial structure, a preparation method thereof, and an electronic device, comprising: a substrate; a first type semiconductor layer, a first multi-quantum well layer, a relative light intensity modulation layer, a second multi-quantum well layer, and a second type semiconductor layer, which are located on one side of the substrate and are sequentially stacked and grown in a direction perpendicular to the plane where the substrate is located; the first multi-quantum well layer and the second multi-quantum well layer have different band gap widths; the relative light intensity modulation layer is used to adjust the effective composite phase ratio of the band gap of the first multi-quantum well layer and the band gap of the second multi-quantum well layer.

[0035] From the above content, it can be seen that the technical solution provided by the present application realizes the dual-band luminescence effect of the LED epitaxial structure through the first multi-quantum well layer and the second multi-quantum well layer with different band gap widths, and at the same time adjusts the effective composite phase ratio of the band gap of the first multi-quantum well layer and the band gap of the second multi-quantum well layer through the relative light intensity modulation layer, so as to achieve the purpose of adjusting the relative ratio of the light intensity of the first multi-quantum well layer and the second multi-quantum well layer, and finally achieve the purpose of improving the color gamut of the application-end electronic equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0037] Figure 1 A schematic diagram of the structure of an LED epitaxial structure provided in an embodiment of the present application;

[0038] Figure 2 A schematic diagram of another LED epitaxial structure provided in an embodiment of the present application;

[0039] Figure 3 A schematic diagram of the structure of another LED epitaxial structure provided in an embodiment of the present application;

[0040] Figure 4 A flow chart of a preparation method provided in an embodiment of the present application. DETAILED DESCRIPTION

[0041] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0042] As described in the background technology, light-emitting diodes (LEDs) have the advantages of small size, high efficiency, energy saving and long service life, and have been widely used. Display backlight is an important application direction of LED. As people's pursuit of electronic products continues to improve, the requirements for the color gamut of display screens are also getting higher and higher. Traditional backlight sources made of a single blue LED chip can only achieve a medium color gamut. If a combination of multiple LED chips of different colors is used to make a backlight, although the color gamut of the backlight can be improved, the complexity and cost of the circuit design at the application end will increase.

[0043] Based on this, the embodiments of the present application provide an LED epitaxial structure, a preparation method thereof, and an electronic device, which effectively solve the technical problems existing in the prior art. The dual-band luminescence effect of the LED epitaxial structure is achieved by using a first multi-quantum well layer and a second multi-quantum well layer with different band gap widths. At the same time, the effective composite phase ratio of the band gap of the first multi-quantum well layer and the band gap of the second multi-quantum well layer is adjusted by the relative light intensity modulation layer, so as to adjust the relative ratio of the light intensity of the first multi-quantum well layer and the second multi-quantum well layer, and finally achieve the purpose of improving the color gamut of the electronic device at the application end.

[0044] To achieve the above purpose, the technical solution provided in the embodiment of the present application is as follows, specifically combined with Figures 1 to 4 The technical solution provided in the embodiments of the present application is described in detail.

[0045] refer to Figure 1FIG. 1 is a schematic diagram of a structure of an LED epitaxial structure provided in an embodiment of the present application, wherein the LED epitaxial structure provided in an embodiment of the present application includes:

[0046] A substrate 100; a first type semiconductor layer 210, a first multi-quantum well layer 310, a relative light intensity modulation layer 400, a second multi-quantum well layer 320, and a second type semiconductor layer 220, which are located on one side of the substrate 100 and are sequentially stacked and grown in a direction perpendicular to the plane where the substrate 100 is located; the first multi-quantum well layer 310 and the second multi-quantum well layer 320 have different band gap widths; the relative light intensity modulation layer 400 is used to adjust the effective composite phase ratio of the band gap of the first multi-quantum well layer 310 and the band gap of the second multi-quantum well layer 320.

[0047] It can be seen from the above content that the technical solution provided in the embodiment of the present application realizes the dual-band luminescence effect of the LED epitaxial structure through the first multi-quantum well layer 310 and the second multi-quantum well layer 320 with different band gap widths, and at the same time adjusts the effective composite phase ratio of the band gap of the first multi-quantum well layer 310 and the band gap of the second multi-quantum well layer 320 through the relative light intensity modulation layer 400, so as to achieve the purpose of adjusting the relative ratio of the light intensity of the first multi-quantum well layer 310 and the second multi-quantum well layer 320, and finally achieves the purpose of improving the color gamut of the application-end electronic device.

[0048] It can be understood that the band gap width of the multi-quantum well layer between the first type semiconductor layer 210 and the second type semiconductor layer 220 of the LED epitaxial structure determines the wavelength band that the LED epitaxial structure can emit. Compared with the existing design of the epitaxial structure with a multi-quantum well layer with a single band gap width, in the LED epitaxial structure provided in the embodiment of the present application, a first multi-quantum well layer 310 and a second multi-quantum well layer 320 with different band gap widths are introduced between the first type semiconductor layer 210 and the second type semiconductor layer 220, thereby enabling the LED epitaxial structure to achieve dual-band light emission. In addition, the dual-band luminous LED epitaxial structure provided in the embodiment of the present application also needs to achieve the purpose of improving the color gamut of the application-end electronic device by adjusting the light intensity of the first multi-quantum well layer 310 and the second multi-quantum well layer 320 to a suitable relative proportion; therefore, in the LED epitaxial structure provided in the embodiment of the present application, a relative light intensity adjustment layer 400 is added between the first multi-quantum well layer 310 and the second multi-quantum well layer 320 to increase an energy barrier between the first multi-quantum well layer 310 and the second multi-quantum well layer 320, and then the effective composite phase ratio of the band gap of the first multi-quantum well layer 310 and the band gap of the second multi-quantum well layer 320 is adjusted by adjusting the strength of the energy barrier, thereby achieving the purpose of adjusting the relative ratio of the light intensity of the first multi-quantum well layer 310 and the second multi-quantum well layer 320, and finally achieving the purpose of improving the color gamut of the application-end electronic device.

[0049] In an embodiment of the present application, the substrate 100 provided in the embodiment of the present application may be a sapphire substrate, a SiO2 composite substrate, etc., wherein the sapphire substrate may be an AlN-plated sapphire substrate, and further the sapphire substrate may be a patterned sapphire substrate (Patterned Sapphire Substrate, PSS), which is not specifically limited in the present application. The first type semiconductor layer 210 may be an N-type gallium nitride layer, and the second type semiconductor layer may be a P-type gallium nitride layer.

[0050] refer to Figure 2 As shown, it is a schematic diagram of the structure of another LED epitaxial structure provided in an embodiment of the present application, wherein the first multi-quantum well layer 310 provided in the embodiment of the present application includes: an InxGa(Ix)N quantum well layer 311 and a first GaN quantum barrier layer 312 that are grown alternately in sequence, wherein the number of growth cycles of the first multi-quantum well layer 310 (the growth cycle is the period of growing a stack of an InxGa(Ix)N quantum well layer 311 and a first GaN quantum barrier layer 312) ranges from 1 to 4, and the value of x can be 0.03 to 0.25. Optionally, within a growth cycle, the thickness of the InxGa(Ix)N quantum well layer 311 provided in the embodiment of the present application ranges from 2 to 3 nm; the thickness of the first GaN quantum barrier layer 312 ranges from 10 to 17 nm. The peak wavelength range of the first multi-quantum well layer 310 provided in the embodiment of the present application can be 430 to 480 nm.

[0051] Continue to refer Figure 2 As shown, the second multi-quantum well layer 320 provided in the embodiment of the present application includes: an InyGa(Iy)N quantum well layer 321 and a second GaN quantum barrier layer 322 that are grown alternately in sequence, wherein the number of growth cycles of the second multi-quantum well layer 320 (the growth cycle is the period of growing a stack of an InyGa(Iy)N quantum well layer 321 and a second GaN quantum barrier layer 322) ranges from 6 to 15, and the value of y can be 0.01 to 0.15. Optionally, within one growth cycle, the thickness of the InyGa(Iy)N quantum well layer 321 provided in the embodiment of the present application ranges from 3 to 4 nm; the thickness of the second GaN quantum barrier layer 322 ranges from 8 to 12 nm. Among them, the peak wavelength range of the second multi-quantum well layer 320 provided in the embodiment of the present application can be 500 to 550 nm.

[0052] Furthermore, the relative light intensity modulation layer 400 provided in the embodiment of the present application may include: a first GaN layer 410, an AlN layer 420, and a second GaN layer 430 grown sequentially. Optionally, the thickness of the first GaN layer 410 provided in the embodiment of the present application is in the range of 3-6 nm; the thickness of the AlN layer 420 is in the range of 2-5 nm; and the thickness of the second GaN layer 430 is in the range of 10-15 nm. The relative light intensity modulation layer 400 composed of the first GaN layer 410, the AlN layer 420, and the second GaN layer 430, which adds a high potential barrier between the band gaps of the first multi-quantum well layer 310 and the second multi-quantum well layer 320, especially the AlN layer 420 has a higher effective potential barrier height, which is equivalent to increasing the energy barrier between the band gaps of the first multi-quantum well layer 310 and the second multi-quantum well layer 320. By adjusting the thickness of the relative light intensity modulation layer 400, the strength of the energy barrier can be adjusted to adjust the effective composite phase ratio of the band gap of the first multi-quantum well layer 310 and the band gap of the second multi-quantum well layer 320. At the same time, combined with the adjustment of the number of growth cycles in the first multi-quantum well layer 310 and the second multi-quantum well layer 320, the purpose of adjusting the relative ratio of the light intensity of the first multi-quantum well layer 310 and the second multi-quantum well layer 320 is achieved, and finally the color gamut of the application-end electronic device is improved.

[0053] Furthermore, the LED epitaxial structure provided in the embodiment of the present application may also include more optimized layers to improve its growth quality and performance. Figure 3 As shown, it is a structural schematic diagram of another LED epitaxial structure provided in an embodiment of the present application, wherein the LED epitaxial structure provided in an embodiment of the present application also includes: a buffer layer 510 located between the substrate 100 and the first type semiconductor layer 210; and / or, an undoped layer 520 located between the substrate 100 and the first type semiconductor layer 210, wherein when the LED epitaxial structure includes the buffer layer 510, the undoped layer 520 is located between the buffer layer 510 and the first type semiconductor layer 210; and / or, a stress release layer 530 located between the first type semiconductor layer 210 and the first multi-quantum well layer 310; and / or, an electron blocking layer 540 located between the second multi-quantum well layer 320 and the second type semiconductor layer 220.

[0054] It should be noted that this application Figure 3The LED epitaxial structure includes a buffer layer 510, a non-doped layer 520, a stress release layer 530 and an electron blocking layer 540. The LED epitaxial structure provided in the embodiment of the present application may include any one or more combinations of the buffer layer 510, the non-doped layer 520, the stress release layer 530 and the electron blocking layer 540. In addition, the LED epitaxial structure provided in the embodiment of the present application is not limited to the buffer layer 510, the non-doped layer 520, the stress release layer 530 and the electron blocking layer 540 provided above, and it may also include more optimized structures, which is not specifically limited in the present application. When the lattice constant difference between the epitaxial material grown on the substrate 100 and the substrate 100 is large, the buffer layer 510 can provide a process of gradually adjusting the crystal structure, effectively relieve the stress caused by the lattice mismatch, prevent the film from cracking or generating microcracks, and thus reduce the defects caused by direct growth, which is conducive to improving the crystal quality of the epitaxial structure. The undoped layer 520 can be an undoped gallium nitride layer. By adjusting the stress in the epitaxial growth process, the warping degree in the multi-quantum well growth stage is regulated to make the surface of the epitaxial structure flat, and finally obtain an LED epitaxial structure with good wavelength uniformity. The stress release layer 530 can block the extension of the bottom layer derived dislocations, thereby improving the quality of the upper layer lattice, and can also reduce the density of penetrating dislocations, reduce the negative impact of dislocations on the LED epitaxial structure, and is conducive to improving the internal quantum efficiency and luminous efficiency of the LED epitaxial structure; at the same time, the stress release layer 530 can also enhance the lateral diffusion ability of the current in the LED epitaxial structure, which is conducive to improving the antistatic ability of the LED epitaxial structure. The electron blocking layer 540 can restrict minority carriers (electrons) from entering the active region, reduce the non-radiative recombination of electrons and holes, and is beneficial to improving the luminous efficiency of the LED epitaxial structure; the electron blocking layer 540 also helps to improve the hole injection efficiency, balance the number of electrons and holes, and further improve the luminous efficiency of the LED epitaxial structure; and, by reducing electron leakage, the electron blocking layer 540 can reduce the operating voltage of the LED epitaxial structure and save energy consumption; in addition, the electron blocking layer 540 reduces the accumulation of electrons in the multi-quantum well layer by changing the energy band structure, thereby avoiding the problem of efficiency reduction caused by excessive electron concentration.

[0055] Based on the same inventive concept, the present application also provides a preparation method for preparing the LED epitaxial structure of any of the above embodiments. Figure 4 FIG. 1 is a flow chart of a preparation method provided in an embodiment of the present application, wherein the preparation method comprises:

[0056] S1. Provide a substrate.

[0057] S2, growing a first type semiconductor layer, a first multi-quantum well layer, a relative light intensity modulation layer, a second multi-quantum well layer, and a second type semiconductor layer in sequence on one side of the substrate and in a direction perpendicular to the plane where the substrate is located. The band gap widths of the first multi-quantum well layer and the second multi-quantum well layer are different; the relative light intensity modulation layer is used to adjust the effective composite phase ratio of the band gap of the first multi-quantum well layer and the band gap of the second multi-quantum well layer.

[0058] From the above content, it can be known that in the LED epitaxial structure provided by the embodiment of the present application, the first multi-quantum well layer and the second multi-quantum well layer with different band gap widths are introduced between the first type semiconductor layer and the second type semiconductor layer, so that the LED epitaxial structure can realize dual-band light emission. In addition, the LED epitaxial structure with dual-band light emission provided by the embodiment of the present application also needs to adjust the light intensity of the first multi-quantum well layer and the second multi-quantum well layer to a suitable relative ratio to achieve the purpose of improving the color gamut of the application-end electronic device; therefore, in the LED epitaxial structure provided by the embodiment of the present application, a relative light intensity adjustment layer is added between the first multi-quantum well layer and the second multi-quantum well layer to increase the energy barrier between the first multi-quantum well layer and the second multi-quantum well layer, and then the effective composite phase ratio of the band gap of the first multi-quantum well layer and the band gap of the second multi-quantum well layer is adjusted by adjusting the strength of the energy barrier, so as to achieve the purpose of adjusting the relative ratio of the light intensity of the first multi-quantum well layer and the second multi-quantum well layer, and finally achieve the purpose of improving the color gamut of the application-end electronic device.

[0059] Further, the LED epitaxial structure provided in the embodiment of the present application may also include more optimized layers to improve its growth quality and performance. Optionally, the LED epitaxial structure provided in the embodiment of the present application also includes: a buffer layer grown between the substrate and the first type semiconductor layer; and / or, a non-doped layer grown between the substrate and the first type semiconductor layer, wherein when the LED epitaxial structure includes the buffer layer, the non-doped layer is located between the buffer layer and the first type semiconductor layer; and / or, a stress release layer grown between the first type semiconductor layer and the first multi-quantum well layer; and / or, an electron blocking layer grown between the second multi-quantum well layer and the second type semiconductor layer. It should be noted that the LED epitaxial structure described in the embodiment of the present application includes any one or more combinations of a buffer layer, a non-doped layer, a stress release layer and an electron blocking layer. Moreover, the LED epitaxial structure provided in the embodiment of the present application is not limited to the buffer layer, non-doped layer, stress release layer and electron blocking layer provided above, and it may also include more optimized structures, which is not specifically limited in the present application.

[0060] The preparation method is described in detail by taking the LED epitaxial structure including a substrate, a buffer layer, a non-doped layer, a first type semiconductor layer, a stress release layer, a first multi-quantum well layer, a relative light intensity modulation layer, a second multi-quantum well layer, an electron blocking layer and a second type semiconductor layer as an example. The preparation method provided in the embodiment of the present application can use MOCVD (Metal-organic Chemical Vapor Deposition) equipment, and trimethyl gallium TMGa and triethyl gallium TEGa are used as Ga sources, ammonia NH3 is used as N source, trimethyl indium TMIn is used as In source, trimethyl aluminum TMAl is used as Al source, H2 and N2 are used as carrier gases, and the doping sources are silane SiH4 and bismuth magnesium CP2Mg, respectively, and a graphite disk is used as a carrier. The preparation method includes:

[0061] Step 1: Provide a substrate. Optionally, when the substrate is an AlN-plated sapphire PSS substrate, the temperature can be raised to 1050° C.-1100° C., and H2 is introduced for 3 minutes for hydrogenation treatment to remove impurities on the substrate surface and anneal the AlN-plated layer of the substrate.

[0062] Step 2: growing a buffer layer on the substrate. TMGa is introduced to grow the buffer layer, the thickness of the buffer layer can be 5nm-15nm, and the growth process temperature can be 800℃-900℃.

[0063] Step 3: growing a non-doped layer on the buffer layer. TMGa is introduced to grow a non-doped layer, which is a non-doped gallium nitride layer (i.e., a U-shaped gallium nitride layer). The thickness of the non-doped layer can be 2000nm-3000nm, and the growth process temperature can be 1100℃-1150℃.

[0064] Step 4: growing a first type semiconductor layer on the non-doped layer. TMGa and SiH4 are introduced to grow the first type semiconductor layer, the first type semiconductor layer may be an N-type gallium nitride layer, the thickness of the first type semiconductor layer may be 1000nm-2000nm, the growth process temperature may be 1060℃-1100℃, and the doping concentration of Si may be 1E19 / cm3-3E19 / cm3.

[0065] Step 5: Grow a stress release layer on the first type semiconductor layer. TEGa, TMIn, and SiH4 are introduced to grow the stress release layer, which can be a low-concentration InGaN / GaN shallow well layer grown for 4-10 cycles (i.e., a stack of InGaN layers and GaN layers grown alternately in sequence), and the thickness of the stress release layer can be 40nm-120nm, wherein the growth process temperature of the shallow well can be 800℃-830℃, and the growth process temperature of the barrier can be 870℃-920℃.

[0066] Step 6: Grow the first multi-quantum well layer on the stress release layer. TEGa, TMIn, and SiH4 are introduced to grow the first multi-quantum well layer, and 1-4 cycles of multi-quantum well layers are grown, which are alternately composed of InxGa(1-x)N quantum well layers and first GaN quantum barrier layers. In one growth cycle, the thickness of the InxGa(1-x)N quantum well layer can be 2nm-3nm, and the thickness of the first GaN quantum barrier layer can be 10nm-17nm.

[0067] Step 7: Grow a relative light intensity tuning layer on the first multi-quantum well layer. TEGa and TMAl are introduced to grow the relative light intensity tuning layer, which is composed of a first GaN layer, an AlN layer, and a second GaN layer grown in sequence. The thickness of the first GaN layer can be 3nm-6nm, the thickness of the AlN layer can be 2nm-5nm, and the thickness of the second GaN layer can be 10nm-15nm.

[0068] Step 8: Grow a second multi-quantum well layer on the relative light intensity modulation layer. TEGa, TMIn, and SiH4 are introduced to grow the second multi-quantum well layer, and 6-15 cycles of multi-quantum well layers are grown, which are composed of InyGa(1-y)N quantum well layers and second GaN quantum barrier layers alternating. In one growth cycle, the thickness of the InyGa(1-y)N quantum well layer can be 3nm-4nm, and the thickness of the second GaN quantum barrier layer can be 8nm-12nm.

[0069] Step 9: growing an electron blocking layer on the second multi-quantum well layer. TMAl, TEGa, CP2Mg, and TMIn are introduced to grow the electron blocking layer, the thickness of the electron blocking layer can be 15nm-50nm, and the growth process temperature can be 940℃-970℃.

[0070] Step 10: growing a second type semiconductor layer on the electron blocking layer. TMGa and CP2Mg are introduced to grow the second type semiconductor layer, which may be a P-type gallium nitride layer, with a thickness of 20nm-40nm, a growth process temperature of 950℃-980℃, and a Mg doping concentration of 2E19 / cm3-1E20 / cm3.

[0071] Step 11: Perform cooling annealing to terminate the growth, test the LED epitaxial structure, and perform LED chip production and optoelectronic parameter testing.

[0072] Based on the same inventive concept, the embodiment of the present application further provides an electronic device, the electronic device comprising the LED epitaxial structure provided by any of the above embodiments. Optionally, the electronic device provided by the embodiment of the present application may be a backlight source, which is not specifically limited in the present application.

[0073] The embodiment of the present application provides an LED epitaxial structure, a preparation method thereof, and an electronic device, including: a substrate; a first type semiconductor layer, a first multi-quantum well layer, a relative light intensity modulation layer, a second multi-quantum well layer, and a second type semiconductor layer, which are located on one side of the substrate and are sequentially stacked and grown in a direction perpendicular to the plane where the substrate is located; the band gap widths of the first multi-quantum well layer and the second multi-quantum well layer are different; the relative light intensity modulation layer is used to adjust the effective composite phase ratio of the band gap of the first multi-quantum well layer and the band gap of the second multi-quantum well layer.

[0074] From the above content, it can be seen that the technical solution provided in the embodiment of the present application realizes the dual-band luminescence effect of the LED epitaxial structure through the first multi-quantum well layer and the second multi-quantum well layer with different band gap widths, and at the same time adjusts the effective composite phase ratio of the band gap of the first multi-quantum well layer and the band gap of the second multi-quantum well layer through the relative light intensity modulation layer, so as to achieve the purpose of adjusting the relative ratio of the light intensity of the first multi-quantum well layer and the second multi-quantum well layer, and finally achieve the purpose of improving the color gamut of the application-end electronic device.

[0075] In the description of the embodiments of the present application, it needs to be understood that the orientation or position relationship indicated by terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0076] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the embodiments of the present application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0077] In the embodiments of the present application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0078] In the embodiments of the present application, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0079] In the embodiments of the present application, if the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" appear, it means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradicting each other.

[0080] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in the field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. An LED epitaxial structure, characterized in that: include: substrate; A first type semiconductor layer, a first multi-quantum well layer, a relative light intensity modulation layer, a second multi-quantum well layer, and a second type semiconductor layer are located on one side of the substrate and are sequentially stacked and grown in a direction perpendicular to the plane where the substrate is located; The band gap widths of the first multi-quantum well layer and the second multi-quantum well layer are different; The relative light intensity adjustment layer is used to adjust the effective composite phase ratio of the first multi-quantum well layer and the second multi-quantum well layer.

2. The LED epitaxial structure according to claim 1, characterized in that: The first multi-quantum well layer comprises: An InxGa(Ix)N quantum well layer and a first GaN quantum barrier layer are grown alternately in sequence, wherein the number of growth cycles of the first multi-quantum well layer ranges from 1 to 4.

3. The LED epitaxial structure according to claim 2, characterized in that: The thickness of the InxGa(Ix)N quantum well layer is in the range of 2-3nm; The thickness of the first GaN quantum barrier layer is in the range of 10-17 nm.

4. The LED epitaxial structure according to claim 1, characterized in that: The second multi-quantum well layer comprises: An InyGa(Iy)N quantum well layer and a second GaN quantum barrier layer are grown alternately in sequence, wherein the number of growth cycles of the second multi-quantum well layer ranges from 6 to 15.

5. The LED epitaxial structure according to claim 4, characterized in that: The thickness of the InyGa(Iy)N quantum well layer is in the range of 3-4nm; The thickness of the second GaN quantum barrier layer is in the range of 8-12 nm.

6. The LED epitaxial structure according to claim 1, characterized in that: The relative light intensity adjustment layer includes: a first GaN layer, an AlN layer and a second GaN layer grown in sequence.

7. The LED epitaxial structure according to claim 6, characterized in that: The thickness of the first GaN layer is in the range of 3-6 nm; The thickness of the AlN layer is in the range of 2-5 nm; The thickness of the second GaN layer is in the range of 10-15 nm.

8. The LED epitaxial structure according to claim 1, characterized in that: The LED epitaxial structure further includes: a buffer layer between the substrate and the first type semiconductor layer; and / or, a non-doped layer between the substrate and the first type semiconductor layer, wherein when the LED epitaxial structure includes the buffer layer, the non-doped layer is located between the buffer layer and the first type semiconductor layer; and / or, a stress release layer between the first type semiconductor layer and the first multi-quantum well layer; and / or, an electron blocking layer located between the second multi-quantum well layer and the second type semiconductor layer.

9. A preparation method, characterized in that: For preparing the LED epitaxial structure according to any one of claims 1 to 8, the preparation method comprising: providing a substrate; On one side of the substrate and in a direction perpendicular to the plane where the substrate is located, a first type semiconductor layer, a first multi-quantum well layer, a relative light intensity modulation layer, a second multi-quantum well layer, and a second type semiconductor layer are sequentially grown in a stacked manner; Wherein, the band gap widths of the first multi-quantum well layer and the second multi-quantum well layer are different; The relative light intensity adjustment layer is used to adjust the effective composite phase ratio of the band gap of the first multi-quantum well layer and the band gap of the second multi-quantum well layer.

10. An electronic device, characterized in that: The electronic device comprises the LED epitaxial structure according to any one of claims 1 to 8.

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