Three-dimensional integrated gas sensing architecture

Abstract

The invention belongs to the technical field of microsystem integration, and particularly relates to a three-dimensional integrated gas sensing architecture, which comprises a photoelectric adapter plate with a first light surface and a second light surface, and a light source module, a filter module and a photoelectric detector module are inversely arranged on the first light surface; the silicon-based adapter plate is located below the photoelectric adapter plate and is provided with a first silicon-based surface and a second silicon-based surface, an amplifier module, an analog-to-digital converter module and a logic processing module are inversely arranged on the first silicon-based surface, the analog-to-digital converter module is located between the amplifier module and the logic processing module, the photoelectric detector module is electrically connected with the amplifier module, and the logic processing module is electrically connected with the logic processing module. The second light surface of the photoelectric adapter plate is connected with the first silicon-based surface of the silicon-based adapter plate through a first solder ball group; the second silicon-based surface of the silicon-based adapter plate is connected to the printed circuit board through a second solder ball group; and the shell is packaged on the printed circuit board. The gas sensor is compact in size and low in power consumption, and can realize remote real-time monitoring of various gases.

Description

Technical Field

[0001] The present invention belongs to the technical field of microsystem integration, and in particular relates to a three-dimensional integrated gas sensor architecture. Background Art

[0002] With the rapid development of science and technology, gas sensors are increasingly used in environmental monitoring, industrial safety, medical diagnosis, smart home and other fields. Electrochemical detection, colorimetric detection, photoionization, flame ionization detection, ion mobility spectrometry, surface acoustic wave detection, and Raman spectroscopy have been used for on-site gas detection, but their detection equipment is large and cannot achieve real-time and remote detection. During use, samples still need to be collected on-site and sent to the analytical laboratory for testing. The detection cycle is long, the risk is high, the mobility is low, and the contact detection poses a serious threat to the safety of the monitoring personnel themselves.

[0003] Traditional gas sensors usually rely on chemical reactions or electrochemical effects. These sensors often have disadvantages such as large size, low sensitivity, slow response speed and high power consumption, which makes it difficult to meet the current demand for miniaturization and multifunctional integration. In addition, traditional sensors are difficult to achieve real-time and accurate detection of multiple gases, and have poor anti-interference ability in complex environments. Summary of the invention

[0004] In view of the above-mentioned deficiencies in the prior art, an object of the present invention is to provide a three-dimensional integrated gas sensing architecture to solve the technical problems in the prior art that traditional gas sensors are large in size, low in sensitivity and difficult to achieve remote real-time detection of multiple gases.

[0005] To achieve the above objectives and other related objectives, the technical solution of the present invention is as follows:

[0006] A three-dimensional integrated gas sensing architecture, comprising:

[0007] The photoelectric adapter board has a first light surface and a second light surface which are arranged back to back, and the light source module, the filter module and the photoelectric detector module are arranged inverted on the first light surface;

[0008] A silicon-based adapter board, comprising a first silicon-based surface and a second silicon-based surface arranged back to back, an amplifier module, an analog-to-digital converter module and a logic processing module being flip-chip mounted on the first silicon-based surface, and the analog-to-digital converter module being located between the amplifier module and the logic processing module, the photodetector module being electrically connected to the amplifier module, and the second optical surface of the photoelectric adapter board being connected to the first silicon-based surface of the silicon-based adapter board via a first solder ball group;

[0009] A printed circuit board, wherein the second silicon-based surface of the silicon-based adapter board is connected to the printed circuit board through a second solder ball group;

[0010] The housing is packaged on the printed circuit board.

[0011] Optionally, the light source module and the photodetector module are laid side by side on the first light surface of the photoelectric adapter board, and the photodetector module is located at the light output end of the filter module;

[0012] The filter module is disposed between the light source module and the photodetector module, or the filter module is bonded to a side of the photodetector module away from the first light surface.

[0013] Optionally, a signal connection layer is provided on the first optical surface of the optoelectronic adapter board, and the optical signal output by the light source module is transmitted to the filter module and the photoelectric detector module in sequence through the signal connection layer.

[0014] Optionally, a plurality of first through-silicon vias (TSVs) penetrating vertically are arranged on the peripheral side of the optoelectronic adapter board, each of the first TSVs is filled with a conductive medium, and both ends of each of the first TSVs are respectively connected to the signal connection layer and the first solder ball group.

[0015] Optionally, a microlens is integrated on the filter module, and the microlens is located at the light incident end of the filter module.

[0016] Optionally, a redistribution layer is provided on the first silicon-based surface of the silicon-based adapter board, and the amplifier module, the analog-to-digital converter module and the logic processing module are all electrically connected to the redistribution layer.

[0017] Optionally, the silicon-based adapter board is provided with a plurality of second through-silicon vias penetrating vertically, each of the second through-silicon vias is filled with a conductive medium, and both ends of each of the second through-silicon vias are respectively connected to the redistribution layer and the second solder ball group.

[0018] Optionally, the three-dimensional integrated gas sensing architecture further includes a data transmission module and a power management module, wherein the data transmission module and the power management module are disposed on the silicon-based adapter board and are both electrically connected to the amplifier module, the analog-to-digital converter module and the logic processing module.

[0019] Optionally, the light source module adopts a tunable light source to adjust the output light signal within different wavelength ranges; the filter module adopts a tunable filter to filter light signals of specific wavelengths within different wavelength ranges; the photodetector module adopts a photodetector with adjustable wavelength to convert light signals of specific wavelengths into electrical signals.

[0020] Optionally, the amplifier module adopts a transimpedance amplifier or a low noise amplifier; the logic processing module adopts a digital signal processor or a programmable gate array device.

[0021] As described above, the three-dimensional integrated gas sensing architecture of the present invention has the following beneficial effects:

[0022] By flip-chipping the light source module, filter module and photodetector module on the optoelectronic adapter board, and flip-chipping the amplifier module, analog-to-digital converter module and logic processing module on the silicon-based adapter board, the silicon-based adapter board is located under the optoelectronic adapter board and connected to it. By adopting this multi-layer stacked packaging structure, remote real-time monitoring of multiple gases can be achieved, and it has high anti-interference ability and stability, high sensitivity and low power consumption; through integrated miniaturization design, the three-dimensional integrated gas sensing architecture significantly reduces the volume while maintaining high performance, and is suitable for portable and integrated micro devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 is a schematic diagram of a three-dimensional integrated gas sensing architecture according to an embodiment of the present invention;

[0024] Figure 2 Schematic diagram of the arrangement of the filter module and the photodetector module of the embodiment of the present invention Figure 1 ;

[0025] Figure 3 Schematic diagram of the arrangement of the filter module and the photodetector module of the embodiment of the present invention Figure 2 ;

[0026] Figure 4 FIG. 1 is a schematic diagram of a signal transmission path of a three-dimensional integrated gas sensing architecture according to an embodiment of the present invention.

[0027] Description of Reference Numerals

[0028] 1- optoelectronic adapter board; 11- first optical surface; 12- second optical surface; 13- signal connection layer; 14- first through silicon via;

[0029] 2-silicon-based adapter plate; 21-first silicon-based surface; 22-second silicon-based surface; 23-rewiring layer; 24-second through-silicon via;

[0030] 3-printed circuit board; 4-light source module; 5-filter module; 51-micro lens; 6-photodetector module; 7-amplifier module; 8-analog-to-digital converter module; 9-logic processing module; 10-housing;

[0031] 201 - a first solder ball group; 202 - a second solder ball group; 203 - a third solder ball group.

[0032] 300 - Target gas. DETAILED DESCRIPTION

[0033] The following is a description of the implementation of the present invention by specific embodiments. People familiar with the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0034] It should be noted that the diagrams provided in the present embodiment only illustrate the basic concept of the present invention in a schematic manner, so the diagrams only show the components related to the present invention rather than drawing according to the number, shape and size of the components in the actual implementation. The form, quantity and proportion of each component in the actual implementation can be changed at will, and the component layout form may also be more complicated. It should be noted that the structure, proportion, size, etc. illustrated in the drawings of the present specification are only used to match the content disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions that the present invention can be implemented, so they have no technical substantive significance. Any modification of the structure, change of the proportional relationship or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the effect and purpose that the present invention can produce. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of the present invention. The change or adjustment of the relative relationship should also be regarded as the scope of the implementation of the present invention without substantially changing the technical content.

[0035] In order to describe the present invention in detail, the three-dimensional integrated gas sensing architecture of the present invention is specifically described below:

[0036] Please combine Figure 1 As shown, the present invention provides a three-dimensional integrated gas sensing architecture, including: an optoelectronic adapter board 1, a silicon-based adapter board 2, a printed circuit board 3 and a shell 10, wherein the optoelectronic adapter board 1 has a first optical surface 11 and a second optical surface 12 arranged back to back, and a light source module 4, a filter module 5 and a photodetector module 6 are flip-chip arranged on the first optical surface 11; the silicon-based adapter board 2 has a first silicon-based surface 21 and a second silicon-based surface 22 arranged back to back, and an amplifier module 7, an analog-to-digital converter module 8 and a logic processing module 9 are flip-chip arranged on the first silicon-based surface 21, and the analog-to-digital converter module 8 is located between the amplifier module 7 and the logic processing module 9, the photodetector module 6 is electrically connected to the amplifier module 7, the second optical surface 12 of the optoelectronic adapter board 1 is connected to the first silicon-based surface 21 of the silicon-based adapter board 2 through a first solder ball group 201; the second silicon-based surface 22 of the silicon-based adapter board 2 is connected to the printed circuit board 3 through a second solder ball group 202; and the shell 10 is encapsulated on the printed circuit board 3.

[0037] Specifically, the housing 10 is packaged on the printed circuit board 3, and the housing 10 has a packaging space, which is arranged from bottom to top in sequence as the printed circuit board 3, the silicon-based adapter board 2 and the optoelectronic adapter board 1, and the light source module 4, the filter module 5 and the photodetector module 6 are flip-chip welded on the first optical surface 11 of the optoelectronic adapter board 1 through the third solder ball group 203, and the amplifier module 7, the analog-to-digital converter module 8 and the logic processing module 9 are flip-chip welded on the first silicon-based surface 21 of the silicon-based adapter board 2 through the third solder ball group 203. Figure 4 , the light source module 4 is used to provide a light signal of a set wavelength to detect the target gas 300; the filter module 5 is used to selectively filter the light signal of a specific wavelength to ensure that only the light signal absorbed by the target gas 300 is transmitted to the photodetector module 6; the photodetector module 6 is used to convert the filtered light signal of a specific wavelength into an electrical signal; the light source module 4, the filter module 5 and the photodetector module 6 constitute an optical detection unit, and the three are interconnected to the photoelectric adapter board 1 through a flip-chip welding process to realize the connection of the optical detection unit. The amplifier module 7 is used to realize the conversion of the current signal to the voltage signal; the analog-to-digital converter module 8 is used to convert the analog signal into a digital signal; the logic processing module 9 is used to determine the target gas 300 by identifying the digital signal; the amplifier module 7, the analog-to-digital converter module 8 and the logic processing module 9 constitute a signal processing unit, and the three are interconnected to the inverted silicon-based adapter board 2 through a flip-chip welding process to realize the connection of the signal processing unit. The light signal emitted by the light source module 4 is directed toward the target gas 300, and then filtered by the filter module 5 for a specific wavelength. The light signal is received by the photodetector module 6 and converted into an electrical signal. The current signal is then converted into a voltage signal and amplified by the amplifier module 7. The analog signal is converted into a digital signal by the analog-to-digital converter module 8, and finally the digital signal is identified by the logic processing module 9 to determine the target gas 300.

[0038] The flip-chip welding process allows optical devices to be directly flipped on the optoelectronic adapter board 1, thereby achieving high-density interconnection. The light source module 4 is installed on the optoelectronic adapter board 1 through the flip-chip welding process. The flip-chip welding technology realizes the electrical and mechanical connection between the light source module 4 and the optoelectronic adapter board 1 through metal bumps (such as copper pillars or gold bumps). The specific process adopts hot pressing welding to firmly flip the light source module 4 on the optoelectronic adapter board 1, ensuring the efficient connection and precise alignment between the light source module 4 and other optical devices. The light source module 4 is connected to the optoelectronic adapter board 1 through a micro-bump flip-chip method, which not only improves the overall integration of the system, but also reduces the optical path loss and improves the detection efficiency; the filter module 5 is installed on the optoelectronic adapter board 1 through the flip-chip welding process to ensure the efficient transmission of the optical signal; the photodetector module 6 is also connected to the optoelectronic adapter board 1 through the flip-chip welding process. This flip-chip welding method can shorten the electrical connection path, reduce the influence of resistance and capacitance effects on the signal, and at the same time improve the integration of the module, making the entire system more compact in size and conducive to three-dimensional integration. In addition, flip-chip welding can provide good thermal conductivity, which helps the detector module maintain a stable temperature state during operation and prevents thermal noise from affecting the accuracy of signal detection. This interconnection method not only has high reliability and low electrical impedance, but also can improve the integration of the system and reduce the interconnection length between devices, thereby reducing signal loss and power consumption.

[0039] The amplifier module 7, the analog-to-digital converter module 8 and the logic processing module 9 are all mounted on the silicon-based adapter board 2 by a flip-chip welding process. The amplifier module 7 is electrically connected to the photodetector module 6, and can convert the current signal output by the photodetector module 6 into a voltage signal, and amplify the signal to ensure the accuracy and stability of the signal; the analog-to-digital converter module 8 is used to convert the analog voltage signal output by the amplifier module 7 into a digital signal, and provide accurate input data for subsequent digital signal processing; the logic processing module 9 is used to quickly analyze and identify the digital signal after analog-to-digital conversion, and determine the type and concentration of the detected target gas 300.

[0040] The three-dimensional integrated gas sensing architecture adopts a multi-layer stacked packaging structure. This compact multi-layer stacking design not only improves the system integration, but also shortens the transmission path of optical signals and electronic signals, further improving the detection efficiency and accuracy, and can realize remote real-time monitoring of multiple gases. It has high anti-interference ability and stability, high sensitivity and low power consumption. Through integrated miniaturization design, the three-dimensional integrated gas sensing architecture significantly reduces the volume while maintaining high performance, and is suitable for portable and integrated micro devices.

[0041] In some embodiments, the light source module 4 and the photodetector module 6 are laid side by side on the first optical surface 11 of the optoelectronic adapter board 1, and the photodetector module 6 is located at the light output end of the filter module 5; the filter module 5 is arranged between the light source module 4 and the photodetector module 6, or the filter module 5 is bonded to the side of the photodetector module 6 away from the first optical surface 11. Specifically, when the light emitted by the light source irradiates the target gas 300 substance, part of the light will return after being scattered or reflected by the target gas 300 and is guided to the filter module 5. The filter module 5 plays a role in selectively filtering specific wavelengths. By adjusting the length of the Fabry-Perot (FP) cavity in the filter module 5, it can adapt to the characteristic absorption wavelengths of different target gases 300. The adjustment of the FP cavity depends on the high-precision micromechanical movement of the filter module 5 structure, so that the filter can be flexibly adjusted to achieve the best wavelength matching, thereby improving the sensitivity and accuracy of the detection.

[0042] See also Figure 2 The light source module 4, filter module 5 and photodetector module 6 in the optical detection unit are planarly interconnected with the photoelectric adapter board 1 through flip-chip welding technology, and are fixed on the photoelectric adapter board 1 in a flat manner, and the filter module 5 is arranged between the light source module 4 and the photodetector module 6. The filter module 5 is connected to the optical waveguide path of the photoelectric adapter board 1 through flip-chip welding, and transmits the filtered optical signal to the photodetector; the photodetector module 6 converts the optical signal into an electrical signal output for subsequent signal processing units to process. The design is characterized by high integration, clear modularization, and easy expansion of system functions.

[0043] To further optimize system performance, refer to Figure 3, the filter module 5 is bonded to the side of the photodetector module 6 away from the first optical surface 11. Specifically, the filter module 5 is directly stacked on the top of the photodetector module 6 through a hybrid bonding process to form a vertical integrated structure. By changing the connection mode between the filter module 5 and the photodetector module 6 to shorten the signal transmission path (shortening the distance of the optical signal from the filter module 5 to the photodetector module 6), the loss and delay in the optical path are reduced, thereby improving the efficiency of signal transmission and the real-time response capability of the system. This stacked structure is interconnected through a hybrid bonding process to ensure the close connection between the filter module 5 and the photodetector module 6. The hybrid bonding process can provide strong mechanical stability and efficient electrical connection, making the interconnection between the two more stable and reliable. The photodetector module 6 is flip-chip welded on the optoelectronic adapter board 1, so that the entire optical detection unit is highly integrated in three-dimensional space, greatly shortening the interconnection path. The advantages of this stacked design are not only to reduce signal loss and improve transmission efficiency, but also to make the system more compact in overall size and layout. This structure is suitable for application scenarios with strict space requirements, while improving the performance of the system, especially in high-precision photoelectric signal detection, where it shows significant advantages.

[0044] In some embodiments, a signal connection layer 13 is provided on the first optical surface 11 of the optoelectronic adapter board 1, and the optical signal output by the light source module 4 is sequentially transmitted to the filter module 5 and the photodetector module 6 through the signal connection layer 13. Specifically, the optoelectronic adapter board 1 not only undertakes the integration task of the light source module 4, the filter module 5 and the detector module, but also realizes the close combination of all optical detection units and electronic modules through the flip-chip welding technology, thereby realizing efficient three-dimensional integration. The signal connection layer 13 is formed by etching the optical fiber on the optoelectronic adapter board 1 through a photolithography process, which can ensure that the optical signal is efficiently transmitted on the optoelectronic adapter board 1. The light source module 4 is directly interconnected with the optoelectronic adapter board 1 by the flip-chip welding technology. Through the flip-chip welding, the output end of the light source module 4 is precisely aligned with the signal connection layer 13 on the optoelectronic adapter board 1, ensuring that the optical signal can be efficiently transmitted to the subsequent optical elements (such as MEMS filter module 5, photodetector module 6).

[0045] In the above embodiment, a plurality of first through-silicon vias 14 penetrating vertically are provided on the peripheral side of the optoelectronic adapter board 1, each of the first through-silicon vias 14 is filled with a conductive medium, and the two ends of each of the first through-silicon vias 14 are respectively connected to the signal connection layer 13 and the first solder ball group 201. Specifically, each first through-silicon via 14 is arranged on the peripheral side of the optoelectronic adapter board 1, and the signal connection layer 13 can be electrically connected to the silicon-based adapter board 2 through the first through-silicon via 14, so that the photodetector module 6 on the optoelectronic adapter board 1 and the amplifier module 7 on the silicon-based adapter board 2 can be electrically connected. The parameters of the first through-silicon via 14 need to be designed according to the electrical connection requirements of the actual device, and the electrical interconnection between different levels can be achieved through the first through-silicon via 14. The precise design of the signal connection layer 13 of the optoelectronic adapter board 1 and the reasonable configuration of the first through-silicon vias 14 jointly ensure the high performance and high reliability of the system.

[0046] In the above embodiment, the filter module 5 is integrated with a microlens 51, and the microlens 51 is located at the light incident end of the filter module 5. Specifically, the microlens 51 is used to focus and collimate the optical signal to ensure that the optical signal can be accurately transmitted to the filter module 5, thereby improving the performance of the entire system. The design of the microlens 51 can be accurately optimized according to the emission angle and beam characteristics of the light beam to ensure that the optical signal enters the filter module 5 at the most suitable incident angle, and can focus more light energy to the filter module 5, thereby minimizing the scattering and loss of the optical signal and improving the overall optical transmission efficiency of the system. Through the focusing effect of the microlens 51, the filter module 5 can respond quickly and accurately to the optical signal within a short response time, greatly improving the sensitivity and accuracy of the gas detection system. The integrated design of the microlens 51 can also be adjusted according to different application requirements, for example, by changing the radius of curvature or focal length of the microlens 51, adapting to optical signals of different wavelengths, so as to optimize the system's detection ability for different gas molecules. In addition, the introduction of the microlens 51 further improves the transmission efficiency and accuracy of the optical signal, ensuring that the optical system can operate in an efficient and low-loss manner.

[0047] In the above embodiment, a redistribution layer 23 is provided on the first silicon-based surface 21 of the silicon-based adapter board 2, and the amplifier module 7, the analog-to-digital converter module 8 and the logic processing module 9 are all electrically connected to the redistribution layer 23. The silicon-based adapter board 2 is provided with a plurality of second through-silicon vias 24 that penetrate vertically, each of which is filled with a conductive medium, and the two ends of each second through-silicon via 24 are respectively connected to the redistribution layer 23 and the second solder ball group 202. Specifically, by providing the second through-silicon via 24 on the silicon-based adapter board 2, high-speed signal transmission between various electronic devices can be achieved, the interference and signal distortion of electronic crosstalk can be reduced, and the reliability and accuracy of the system can be improved. The redistribution layer 23 (RDL) is located on the surface layer of the second through-silicon via 24, and is used to flexibly lead out and distribute signals to achieve precise interconnection between different modules in a multi-layer stacked structure. The design of the redistribution layer 23 takes into account signal integrity and anti-interference capabilities, and can optimize the signal path and reduce resistance and parasitic effects, thereby further improving the performance of the system. The redistribution layer 23 is connected to the second through-silicon via 24 (TSV) through a patterning process, and the second through-silicon via 24 is connected to the PCB board through the second solder ball group 202 to ensure the efficiency and stability of signal transmission. In this way, by designing the redistribution layer 23 on the surface of the second through-silicon via 24, not only can efficient interconnection of different electronic modules be achieved, but also the design requirements in different application scenarios can be flexibly responded to, further improving the scalability and adaptability of the three-dimensional integrated gas sensing architecture.

[0048] In some embodiments, the three-dimensional integrated gas sensing architecture further includes a data transmission module and a power management module, which are disposed on the silicon-based adapter board 2 and are electrically connected to the amplifier module 7, the analog-to-digital converter module 8, and the logic processing module 9. Specifically, the data transmission module and the power management module are integrated with the signal processing unit on the silicon-based adapter board 2. This integrated design makes the entire system more compact, and further improves the transmission efficiency and reliability of the system by optimizing the electrical connection and the signal transmission path.

[0049] In some embodiments, the light source module 4 adopts a tunable light source to adjust the output light signal within different wavelength ranges; specifically, the light source module 4 adopts a tunable light source, which can adjust the output light signal within different wavelength ranges according to detection requirements, thereby improving the detection sensitivity of different types of gases. The wavelength tuning function of the light source module 4 enables it to optimize the absorption peak of a specific gas, thereby achieving flexible detection of multiple gases.

[0050] The light source module 4 can adopt a quantum cascade laser (QCL), a vertical cavity surface emitting laser (VCSEL) or a vertical quantum cascade laser (VQCL). Among them, the main function of the quantum cascade laser (QCL) is to serve as an optical signal source for detecting carbon dioxide (CO) gas. The QCL laser has extremely high monochromaticity and wavelength adjustment capabilities, and can accurately emit a light wavelength that matches the characteristic absorption peak of the CO molecule. Within the 4.3μm wavelength range, CO gas will produce a significant light absorption effect. Therefore, the light signal excited by the quantum cascade laser (QCL) can effectively detect the presence and concentration of CO gas. Through this detection method based on characteristic absorption wavelengths, the system can achieve high sensitivity and high selectivity gas detection. Although a QCL light source with a central wavelength of 4.3μm is selected in this design for detecting CO gas, the light source module 4 is highly flexible and can be replaced with light sources of other wavelengths as needed to adapt to the detection of different types of gases. For example, QCL light sources of other bands or other types of light sources, such as LEDs or vertical cavity surface emitting lasers (VCSELs), can be used to detect other gases such as methane (CH), carbon monoxide (CO), etc. A vertical quantum cascade laser (VQCL) can also be used, which has high power and a wide wavelength adjustment range, and can generate specific wavelength light sources for different target gases 300 substances. The diversity of this design provides great convenience for the expansion of the architecture, and can easily adapt to different application scenarios and gas detection requirements. The light source module 4 achieves efficient and stable optical signal output and transmission by adopting the design of laser and flip-chip welding technology. Its modular design enables the system to have flexible light source replacement capabilities and can adapt to a variety of gas detection applications.

[0051] In some embodiments, the filter module 5 uses a tunable filter to filter light signals of specific wavelengths within different wavelength ranges; the photodetector module 6 uses a photodetector with adjustable wavelength to convert light signals of specific wavelengths into electrical signals. Specifically, the filter module 5 (MEMS filter module 5) realizes dynamic tuning through a control signal, and can selectively filter light signals of specific wavelengths within different wavelength ranges so as to interact with specific gases, thereby improving the accuracy of gas detection. The photodetector module 6 converts the filtered light signals of specific wavelengths into electrical signals, has a wavelength adjustment function, can identify different types of gases, and improves the flexibility and compatibility of the detection system. The photodetector module 6 can use, for example, an indium gallium arsenide (InGaAs) detector with a broadband response, which is mainly used to convert mid-infrared light signals (3-5μm range) passing through the filter module 5 into electrical signals. The indium gallium arsenide detector is particularly suitable for gas detection applications with its excellent broadband response, sensitivity and fast response capability, and can effectively detect the characteristic absorption wavelength region of the target gas 300, which makes it exhibit extremely high signal capture capability in high-precision detection, especially for the detection of gas molecules in the mid-infrared band.

[0052] In some embodiments, the amplifier module 7 uses a transimpedance amplifier or a low noise amplifier; the logic processing module 9 uses a digital signal processor or a programmable gate array device. Specifically, the signal processing unit is used to ensure that the weak electrical signal received from the photodetector can be processed with high precision and high reliability, thereby ensuring the performance of the entire system. The electrical signal output by the photodetector module 6 directly enters the low noise amplifier (LNA) or transimpedance amplifier for preliminary amplification. The function of the low noise amplifier is to enhance the strength of the electrical signal, reduce the noise and distortion during the signal transmission process, and ensure that the signal strength is high enough so that the subsequent processing links can operate normally. The analog signal amplified by the low noise amplifier then enters the analog-to-digital converter module 8 (ADC), and the analog-to-digital converter module 8 converts the analog signal into a digital signal for subsequent digital signal processing. The conversion accuracy and speed of the analog-to-digital converter module 8 are crucial to the performance of the system, especially in real-time monitoring and high-sensitivity gas sensing applications, the number of bits and sampling rate of the analog-to-digital converter module 8 will directly affect the resolution and response speed of the signal. After being converted into digital signals, the digital signals are transmitted to a digital signal processor (DSP) or a field programmable gate array (FPGA). At this stage, the DSP or FPGA is responsible for executing a series of signal processing algorithms, including digital filtering, signal re-amplification, error correction, and signal spectrum analysis. Digital filtering is used to remove excess noise and interference to ensure the purity of the signal; error correction further improves the accuracy of signal processing to ensure that the system can output reliable detection results. Compared with DSP, FPGA has higher flexibility and is suitable for customized high-speed data processing needs, while DSP is good at executing complex signal processing algorithms.

[0053] The signal processing unit is tightly integrated with the photodetector module 6 and the filter module 5. Through this three-dimensional integration, the signal processing unit can not only shorten the signal transmission path, reduce signal delay and loss, but also improve the overall real-time performance and efficiency of the system. The design and integration of the signal processing unit ensures efficient transmission and processing of signals, providing an important guarantee for the high-sensitivity detection of the gas sensing architecture.

[0054] In summary, the three-dimensional integrated gas sensing architecture provided by the present invention is achieved by flip-chipping the light source module 4, the filter module 5 and the photodetector module 6 on the optoelectronic adapter board 1, and flip-chipping the amplifier module 7, the analog-to-digital converter module 8 and the logic processing module 9 on the silicon-based adapter board 2. The silicon-based adapter board 2 is located below the optoelectronic adapter board 1 and connected thereto. By adopting such a multi-layer stacked packaging structure, remote real-time monitoring of multiple gases can be achieved, and it has high anti-interference ability and stability, high sensitivity and low power consumption. Through integrated miniaturization design, the three-dimensional integrated gas sensing architecture significantly reduces the volume while maintaining high performance, and is suitable for portable and integrated micro-devices.

[0055] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A three-dimensional integrated gas sensing architecture, characterized in that: include: The photoelectric adapter board has a first light surface and a second light surface which are arranged back to back, and the light source module, the filter module and the photoelectric detector module are arranged inverted on the first light surface; A silicon-based adapter board, located below the photoelectric adapter board, having a first silicon-based surface and a second silicon-based surface disposed back to back, an amplifier module, an analog-to-digital converter module and a logic processing module being flip-chip mounted on the first silicon-based surface, and the analog-to-digital converter module being located between the amplifier module and the logic processing module, the photodetector module being electrically connected to the amplifier module, and the second optical surface of the photoelectric adapter board being connected to the first silicon-based surface of the silicon-based adapter board via a first solder ball group; A printed circuit board, wherein the second silicon-based surface of the silicon-based adapter board is connected to the printed circuit board through a second solder ball group; The housing is packaged on the printed circuit board.

2. The three-dimensional integrated gas sensing architecture according to claim 1, characterized in that: The light source module and the photodetector module are laid side by side on the first light surface of the photoelectric adapter board, and the photodetector module is located at the light output end of the filter module; The filter module is disposed between the light source module and the photodetector module, or the filter module is bonded to a side of the photodetector module away from the first light surface.

3. The three-dimensional integrated gas sensing architecture according to claim 1, characterized in that: A signal connection layer is disposed on the first optical surface of the photoelectric adapter board, and the optical signal output by the light source module is sequentially transmitted to the filter module and the photoelectric detector module through the signal connection layer.

4. The three-dimensional integrated gas sensing architecture according to claim 3, characterized in that: A plurality of first through-silicon vias are vertically provided on the peripheral side of the optoelectronic adapter board, each of which is filled with a conductive medium, and both ends of each of the first through-silicon vias are respectively connected to the signal connection layer and the first solder ball group.

5. The three-dimensional integrated gas sensing architecture according to claim 1, characterized in that: The filter module is integrated with a microlens, and the microlens is located at the light incident end of the filter module.

6. The three-dimensional integrated gas sensing architecture according to claim 1, characterized in that: A redistribution layer is provided on the first silicon-based surface of the silicon-based adapter board, and the amplifier module, the analog-to-digital converter module and the logic processing module are all electrically connected to the redistribution layer.

7. The three-dimensional integrated gas sensing architecture according to claim 6, characterized in that: The silicon-based adapter board is provided with a plurality of second through-silicon vias penetrating vertically, each of the second through-silicon vias is filled with a conductive medium, and both ends of each of the second through-silicon vias are respectively connected to the redistribution layer and the second solder ball group.

8. The three-dimensional integrated gas sensing architecture according to claim 1, characterized in that: The three-dimensional integrated gas sensor architecture also includes a data transmission module and a power management module, which are arranged on the silicon-based adapter board and are both electrically connected to the amplifier module, the analog-to-digital converter module and the logic processing module.

9. The three-dimensional integrated gas sensing architecture according to claim 1, characterized in that: The light source module adopts a tunable light source to adjust the output light signal within different wavelength ranges; the filter module adopts a tunable filter to filter the light signal of a specific wavelength within different wavelength ranges; The photoelectric detector module adopts a photoelectric detector with adjustable wavelength to convert a light signal of a specific wavelength into an electrical signal.

10. The three-dimensional integrated gas sensing architecture according to claim 1, characterized in that: The amplifier module adopts a transimpedance amplifier or a low noise amplifier; the logic processing module adopts a digital signal processor or a programmable gate array device.

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