Silicon electrode and method for manufacturing the same

Abstract

The embodiment of the present application provides a silicon electrode and a method for manufacturing the same, aiming to improve the problem of low service life of the silicon electrode. The silicon electrode comprises a silicon electrode body and a plurality of through grooves spaced apart along the circumferential direction of the silicon electrode body, each of the through grooves extending along the radial direction of the silicon electrode body; the through groove has a first side and a second side arranged opposite to each other, and the first side and / or the second side are rounded sides. In the present application, at least one of the first side and the second side of the through groove is set as a rounded side, and the rounded side can reduce the probability of arc gathering and avoid arc damage to the through groove. This is beneficial to improving the service life of the silicon electrode, and further to reducing the etching cost.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor component processing, and in particular to a silicon electrode and a method for manufacturing the same. Background Art

[0002] Etching parts for etcher refer to parts that meet the requirements of semiconductor etching equipment and technology in terms of materials, structure, process, quality and precision, reliability and stability. They are divided into electrostatic rings, silicon rings, silicon electrodes, grounding clamps and other types of structural parts.

[0003] Silicon electrodes are core components in etching equipment. In related technologies, the service life of silicon electrodes is relatively low, resulting in high etching costs. Summary of the invention

[0004] The present application provides a silicon electrode and a method for manufacturing the same, aiming to improve the problem of low service life of the silicon electrode.

[0005] In a first aspect, an embodiment of the present application proposes a silicon electrode, which includes a silicon electrode body and a plurality of through grooves arranged at intervals along the circumferential direction of the silicon electrode body, each of the through grooves extending along the radial direction of the silicon electrode body; the through groove has a first edge and a second edge arranged opposite to each other, and the first edge and / or the second edge are rounded edges.

[0006] In some embodiments, both the first edge and the second edge are rounded edges.

[0007] In some embodiments, the radius of the rounded edge is greater than or equal to 0.2 mm and less than or equal to 0.5 mm.

[0008] In some embodiments, the silicon electrode is a polycrystalline silicon electrode, a single crystal silicon electrode, or a silicon carbide electrode.

[0009] In a second aspect, an embodiment of the present application provides a method for manufacturing a silicon electrode, comprising:

[0010] Providing a silicon electrode body;

[0011] A plurality of through grooves are sequentially formed on the silicon electrode body along a circumferential direction, each of the through grooves extending along a radial direction of the silicon electrode body, and the through grooves have a first side and a second side that are oppositely arranged;

[0012] The first edge and / or the second edge are rounded.

[0013] In some embodiments, the step of rounding the first edge or the second edge comprises:

[0014] Selecting one of the plurality of through grooves as a reference groove, and measuring a deviation angle between an extension direction of the reference groove and a preset first reference line;

[0015] Rotating the silicon electrode body to return the deviation angle to zero;

[0016] rounding the edge to be processed of the reference groove, wherein the edge to be processed is one of the first edge and the second edge;

[0017] The remaining edges to be processed of the plurality of through grooves are rounded.

[0018] In some embodiments, the step of rounding the first edge and the second edge comprises:

[0019] Selecting one of the plurality of through grooves as a reference groove, and measuring a first deviation angle between an extension direction of the reference groove and a preset first reference line;

[0020] Rotating the silicon electrode body to return the first deviation angle to zero;

[0021] Rounding the first to-be-processed edge of the reference groove and the first to-be-processed edges of the remaining plurality of through grooves in sequence, wherein the first to-be-processed edge is one of the first edge and the second edge;

[0022] Turning over the silicon electrode body;

[0023] Measuring a second deviation angle between an extension direction of the reference groove and the first reference line;

[0024] Rotating the silicon electrode body to return the second deviation angle to zero;

[0025] The second edge to be processed of the reference groove and the second edges to be processed of the remaining plurality of through grooves are rounded in sequence, wherein the second edge to be processed is the other of the first edge and the second edge.

[0026] In some embodiments, the step of sequentially forming a plurality of spaced through grooves on the silicon electrode body along a circumferential direction includes:

[0027] A plurality of countersunk pre-holes arranged at intervals are sequentially formed on the silicon electrode body along a circumferential direction;

[0028] The countersunk pre-holes are ground in sequence using a tool to form a plurality of through grooves.

[0029] In some embodiments, the step of grinding the countersunk pre-holes in sequence using a tool to form a plurality of through-grooves of a preset size includes:

[0030] Dividing the plurality of countersunk pre-holes into a plurality of groups in accordance with a processing sequence;

[0031] Grinding the plurality of countersunk pre-holes in the current group in sequence to form the plurality of through-grooves in the current group;

[0032] Obtaining the size of the last through slot in the current group and comparing it with the preset size to obtain the slot compensation parameters of the next group;

[0033] Performing parameter compensation on the tool according to the groove compensation parameter;

[0034] The plurality of pre-holes in the next group are ground using the tool after parameter compensation to form the plurality of through grooves in the next group.

[0035] In some embodiments, the mesh number of the tool is greater than 150 mesh and less than 250 mesh.

[0036] In the present application, the silicon electrode is annular, and a plurality of through grooves are arranged at intervals along the circumferential direction of the silicon electrode. The through grooves can realize ion diffusion, injection, etc. during the etching process, and can also change the flow path of the current on the silicon electrode, so that the current is more evenly distributed on the silicon electrode. Furthermore, at least one of the first side and the second side of the through groove is set as a rounded edge. Compared with the edge in the related art, the rounded edge can reduce the probability of arc gathering and avoid arc damage to the through groove. As a result, it is beneficial to increase the service life of the silicon electrode, and then help reduce the etching cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0038] Figure 1 This is a schematic diagram of the structure of a silicon electrode according to an embodiment of the present application;

[0039] Figure 2 for Figure 1 Schematic diagram of the enlarged structure at M in the middle;

[0040] Figure 3 for Figure 2 Schematic diagram of the cross-sectional structure of AA;

[0041] Figure 4 A schematic diagram of a process for manufacturing a silicon electrode according to an embodiment of the present application;

[0042] Figure 5A schematic diagram of the process of rounding processing according to an embodiment of the present application;

[0043] Figure 6 It is another schematic diagram of a process of rounding processing according to an embodiment of the present application;

[0044] Figure 7 A schematic diagram of a through-groove processing process according to an embodiment of the present application;

[0045] Figure 8 It is a schematic diagram of the process of grouping through grooves according to one embodiment of the present application.

[0046] Description of Figure Numbers:

[0047] 10 - silicon electrode, 100 - silicon electrode body, 110 - through groove, 111 - first side, 112 - second side, 110a - reference groove. DETAILED DESCRIPTION

[0048] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0049] In the description of the present application, it should be understood that if the terms "up", "down", "left", "right", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, it is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes and cannot be understood as limitations on the present application. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.

[0050] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as suggesting or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. The character " / " generally indicates that the previously associated objects are in an "or" relationship.

[0051] In the description of this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0052] Silicon electrodes are key components in etching equipment. After the etching gas passes through the nozzle and enters the chamber of the plasma etching equipment, it is ionized into plasma by the electric field formed by the silicon electrode. As the etching process proceeds, the silicon electrode will gradually be bombarded by the plasma and corroded by chemical reactions, resulting in loss of the silicon electrode. In related technologies, the silicon electrode often has a problem of reduced etching accuracy before reaching its designed life, which greatly reduces the actual life of the silicon electrode and increases the etching cost.

[0053] After in-depth research, the applicant found that the reason why the actual life of the silicon electrode is greatly reduced is that the through-grooves on the silicon electrode are prone to arcing, and the arcing will affect the service life and etching effect of the silicon electrode. Based on the above considerations, the inventor of the present application proposed a silicon electrode and a method for making a silicon electrode, which reduces the probability of arcing in the through-grooves by chamfering the groove edges of the silicon electrode, thereby improving the service life and etching effect of the silicon electrode and reducing the etching cost.

[0054] The first aspect of the present application provides a silicon electrode 10. Figures 1 to 3 As shown, the silicon electrode 10 includes a silicon electrode body 100 and a plurality of through grooves 110 spaced apart along the circumferential direction of the silicon electrode body 100, each through groove 110 extends along the radial direction of the silicon electrode body 100, and the through groove 110 has a first edge 111 and a second edge 112 that are oppositely arranged, and the first edge 111 and / or the second edge 112 are rounded edges.

[0055] In the present application, the silicon electrode 10 is annular, and a plurality of through grooves 110 are arranged at intervals along the circumferential direction of the silicon electrode 10. The through grooves 110 can realize ion diffusion and injection during etching, and can also change the flow path of the current on the silicon electrode 10, so that the current is more evenly distributed on the silicon electrode 10. The first side 111 and the second side 112 of the through groove 110 are two opposite groove sides in the depth direction of the through groove 110.

[0056] In the present application, at least one of the first edge 111 and the second edge 112 is set as a rounded edge. Compared with the edge in the related art, the rounded edge can reduce the probability of arc gathering and avoid arc damage through the groove 110. This is conducive to improving the service life of the silicon electrode 10 and further reducing the etching cost.

[0057] In some embodiments, Figure 3 As shown, the first edge 111 and the second edge 112 are both rounded edges. In this way, the probability of arc gathering can be further reduced, which is beneficial to further improve the service life of the silicon electrode 10.

[0058] In some embodiments, the radius of the rounded edge is greater than or equal to 0.2 mm and less than or equal to 0.5 mm. The applicant has found through research and experiments that the radius of the rounded edge needs to be controlled within a reasonable range. In this embodiment, the radius of the rounded edge is controlled within 0.2-0.5 mm, which can ensure the etching effect after rounding on the one hand, and reduce the probability of arc gathering on the other hand, thereby increasing the service life of the silicon electrode 10. Optionally, the radius of the rounded edge is 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, etc.

[0059] Preferably, in a specific embodiment, the radius of the fillet edge is 0.3 mm. The applicant has found through research and experiments that when the radius of the fillet is 0.3 mm, the etching effect of the silicon electrode 10 is not affected, and the arc will not be gathered at the fillet edge, thereby maximizing the service life of the silicon electrode 10 and reducing the etching cost.

[0060] In some embodiments, the silicon electrode 10 is a polycrystalline silicon electrode, a single crystal silicon electrode or a silicon carbide electrode. Polycrystalline silicon and single crystal silicon are two different forms of silicon, and silicon carbide is an inorganic substance composed of carbon and silicon.

[0061] In some embodiments, the through groove 110 is a waist-shaped groove. In this embodiment, the through groove 110 is set as a waist-shaped groove, and the inner wall of the waist-shaped groove does not have edges, thereby further reducing the probability of arc gathering on the through groove 110, thereby further improving the service life of the silicon electrode 10.

[0062] In a second aspect, the present application provides a method for manufacturing a silicon electrode 10. Figure 4 As shown, the method for manufacturing the silicon electrode 10 includes:

[0063] Providing a silicon electrode body 100;

[0064] A plurality of through grooves 110 are sequentially formed in a circumferential direction on the silicon electrode body 100 and are arranged at intervals. Each through groove 110 extends in a radial direction of the silicon electrode body 100 . The through groove 110 has a first side 111 and a second side 112 that are arranged opposite to each other.

[0065] The first side 111 and / or the second side 112 are rounded.

[0066] In the manufacturing method of the silicon electrode 10 of the present application, the silicon electrode body 100 refers to the intermediate piece to be processed after the upper and lower surfaces of the silicon electrode blank are ground by a grinder, which can ensure the flatness during subsequent processing and the thickness of the silicon electrode 10 after the finished product. After grinding by the grinder, a plurality of through grooves 110 are formed on the silicon electrode body 100 by ultrasonic equipment. After that, the first side 111 and / or the second side 112 of the through groove 110 are chamfered by ultrasonic equipment. It can be understood that the above process omits the processing of other structures of the silicon electrode body 100, such as the large outer diameter, the small outer diameter, the step surface, etc. These structures can be processed before the processing of the through groove 110, or they can be processed during the processing of the through groove 110, and the present application does not limit this.

[0067] In the silicon electrode 10 manufactured by the manufacturing method of the present application, at least one of the first edge 111 and the second edge 112 is set as a rounded edge, which can reduce the probability of arc gathering and prevent arc damage from penetrating the groove 110. This is conducive to improving the service life of the silicon electrode 10 and further reducing the etching cost.

[0068] It is easy to understand that rounding the first side 111 and / or the second side 112 means rounding one of the first side 111 and the second side 112; or, rounding both the first side 111 and the second side 112. The specific selection can be flexibly made according to actual conditions.

[0069] In some embodiments, Figure 5 Shown and referenced Figure 1 and Figure 2 The step of rounding the first edge 111 or the second edge 112 comprises:

[0070] Select one of the plurality of through grooves 110 as a reference groove 110a, and measure a deviation angle between an extension direction of the reference groove 110a and a preset first reference line L;

[0071] Rotate the silicon electrode body 100 to return the deviation angle to zero;

[0072] Rounding the edge to be processed of the reference groove 110 a , where the edge to be processed is one of the first edge 111 and the second edge 112 ;

[0073] The remaining edges of the through grooves 110 to be processed are rounded.

[0074] This embodiment proposes specific steps for chamfering the first edge 111 or the second edge 112. The edge to be processed is one of the first edge 111 and the second edge 112, which means that the edge to be processed is different according to the different settings of the processing surface of the silicon electrode body 100. For example, when the side surface of the first edge 111 of the silicon electrode body 100 close to the through groove 110 is the processing surface, the first edges 111 of all the through grooves 110 are the edges to be processed; when the side surface of the second edge 112 of the silicon electrode body 100 close to the through groove 110 is the processing surface, the second edges 112 of all the through grooves 110 are the edges to be processed. The first reference line L refers to a positioning reference line extending along a certain horizontal direction, and the reference groove 110a refers to the first through groove 110 to be chamfered.

[0075] In this embodiment, one of the through grooves 110 is first selected as the reference groove 110a, and then the extension direction of the reference groove 110a is aligned with the first reference line L. In this way, the reference groove 110a can be positioned to ensure that the position of the reference groove 110a is at a preset position. Afterwards, the edge to be processed of the reference groove 110a and the edges to be processed of the remaining multiple through grooves 110 are processed in sequence according to the processing sequence. In this way, the consistency of the groove edge chamfering processing of all the through grooves 110 located on the same side can be improved, which is beneficial to improve the service life of the silicon electrode 10 and reduce the etching cost.

[0076] In some embodiments, Figure 6 Shown and referenced Figure 1 and Figure 2 The step of rounding the first edge 111 and the second edge 112 comprises:

[0077] Select one of the plurality of through grooves 110 as a reference groove 110a, and measure a first deviation angle between an extension direction of the reference groove 110a and a preset first reference line L;

[0078] Rotate the silicon electrode body 100 to return the first deviation angle to zero;

[0079] The first edge to be processed of the reference groove 110a and the first edges to be processed of the remaining plurality of through grooves 110 are rounded in sequence, wherein the first edge to be processed is one of the first edge 111 and the second edge 112;

[0080] Turning over the silicon electrode body 100;

[0081] Measuring a second deviation angle between the extension direction of the reference groove 110a and the preset first reference line L;

[0082] Rotate the silicon electrode body 100 to return the second deviation angle to zero;

[0083] The second edge to be processed of the reference groove 110 a and the second edges to be processed of the remaining plurality of through grooves 110 are rounded in sequence. The second edge to be processed is the other of the first edge 111 and the second edge 112 .

[0084] This embodiment proposes specific steps for chamfering the first edge 111 and the second edge 112. The first edge to be processed is one of the first edge 111 and the second edge 112, and the second edge to be processed is the other of the first edge 111 and the second edge 112, which means that the edges to be processed are different according to the different processing surface settings of the silicon electrode body 100. For example, in the initial state, when the side surface of the first edge 111 of the silicon electrode body 100 close to the through groove 110 is the processing surface, the first edges 111 of all the through grooves 110 are the first edges to be processed, and the second edges 112 are the second edges to be processed. For another example, in the initial state, when the side surface of the second edge 112 of the silicon electrode body 100 close to the through groove 110 is the processing surface, the second edges 112 of all the through grooves 110 are the first edges to be processed, and the first edge 111 is the second edge to be processed. The first reference line L refers to a positioning reference line extending along a certain horizontal direction, and the reference groove 110a refers to the first through groove 110 to be chamfered.

[0085] In this embodiment, the first edge 111 and the second edge 112 need to be rounded. Take the first edge 111 of all the through grooves 110 as an example to process first and then the second edge 112 of all the through grooves 110 as an example to illustrate:

[0086] First, one of the through grooves 110 is selected as the reference groove 110a, and then the extension direction of the reference groove 110a is aligned with the first reference line L. In this way, the reference groove 110a can be positioned to ensure that the position of the reference groove 110a is at a preset position, and then the first to-be-processed edge (first edge 111) of the reference groove 110a and the first to-be-processed edges (first edges 111) of the remaining multiple through grooves 110 are processed in sequence according to the processing sequence. In this way, the consistency of the rounding of the first edges 111 of all through grooves 110 located on the same side can be improved, which is conducive to improving the service life of the silicon electrode 10 and reducing the etching cost.

[0087] After the rounding of the first edge 111 is completed, the silicon electrode body 100 is turned over, and the extension direction of the reference groove 110a is aligned with the first reference line L. In this way, the reference groove 110a can be positioned again to ensure that the position of the reference groove 110a is still in the preset position. Thereafter, the second edge to be processed (the second edge 112) of the reference groove 110a and the second edges to be processed (the first edge 111) of the remaining multiple through grooves 110 are processed in sequence according to the processing sequence. In this way, the consistency of the rounding of the second edges 112 of all through grooves 110 located on the same side can be improved, which is beneficial to increase the service life of the silicon electrode 10 and reduce the etching cost.

[0088] Furthermore, since the first side 111 and the second side 112 of each through groove 110 are positioned by the reference groove 110a and the first reference line L, it is also possible to ensure that the processing consistency of the first side 111 and the second side 112 of each through groove 110 is high, which is beneficial to further improve the service life of the silicon electrode 10 and reduce the etching cost.

[0089] In some embodiments, Figure 7 As shown, the step of sequentially forming a plurality of through grooves 110 spaced apart in a circumferential direction on the silicon electrode body 100 includes:

[0090] A plurality of countersunk pre-holes arranged at intervals are sequentially formed on the silicon electrode body 100 along the circumferential direction;

[0091] The countersunk pre-holes are ground in sequence using a tool to form a plurality of through grooves 110 .

[0092] In this embodiment, when manufacturing the through-groove 110, a plurality of countersunk pre-holes are first formed, and then the countersunk pre-holes are ground into the through-groove 110. Compared with the processing methods of drilling and reaming in the related art, the processing method of this embodiment can avoid edge collapse of the through-groove 110, thereby facilitating the processing stability and yield rate of the through-groove 110.

[0093] Optionally, in some embodiments, the silicon electrode body 100 is provided with a grinding margin, so that even if the through-groove 110 has a chipped edge, the chipped edge can be covered by fine finishing, thereby further improving the processing yield of the through-groove 110 .

[0094] In some embodiments, the mesh number of the tool is greater than 150 meshes and less than 250 meshes. The mesh number of the tool directly affects the efficiency and quality of grinding. After in-depth research and experiments, the applicant found that when the mesh number of the tool is set to be greater than 150 meshes and less than 250 meshes, the wear of the tool can be reduced while ensuring the processing quality.

[0095] Table 1 shows the processing conditions of the through groove 110 and the wear of the tool after the through groove 110 is processed by tools of different mesh sizes. When the roughness of the through groove 110 is less than or equal to Ra1.6 and there is no edge collapse, the through groove 110 is considered to meet the requirements.

[0096] Table 1 Tool wear and through groove roughness measurement

[0097]

[0098] As can be seen from the table above, when the mesh number of the tool is greater than 150 and less than 250, the processed through groove 110 will not have edge collapse, and the tool wear is slight, and the tool can continue to be used. In this way, the number of tool replacements can be reduced while ensuring the processing quality of the through groove 110, thereby reducing costs.

[0099] It should be noted that the wear condition of the tool mentioned above is obtained by visual inspection. The specific method is to obtain the image of the processed tool through a magnifying glass, industrial camera, etc., and compare the tool image with the preset tool images of different degrees of wear, so as to determine whether the degree of wear of the tool is light wear or severe wear.

[0100] In some embodiments, Figure 8 As shown, the step of using a tool to grind the countersunk pre-holes in sequence to form a plurality of through slots 110 of a preset size includes:

[0101] Divide multiple countersunk pre-holes into multiple groups according to the processing sequence;

[0102] Grinding the plurality of countersunk pre-holes in the current group in sequence to form a plurality of through slots 110 in the current group;

[0103] Obtain the size of the last through slot 110 in the current group and compare it with the preset size to obtain the slot compensation parameters of the next group;

[0104] Perform parameter compensation on the tool according to the slot compensation parameters;

[0105] The tool with parameter compensation is used to grind the multiple countersunk pre-holes in the next group to form the next group of multiple through grooves 110.

[0106] How to control the dimensional stability of multiple through grooves 110 is a difficult point in the processing of silicon electrode 10. It is understandable that during the continuous grinding process of the tool, the tool abrasive particles will fall off, causing the tool diameter to become smaller, and then the size of the processed through groove 110 will also change. The applicant has found through research that during the processing process, the size of a certain number of continuous through grooves 110 will remain stable. Therefore, this embodiment proposes specific steps for using the same tool to form multiple through grooves 110 with high stability and high consistency:

[0107] First, before processing, multiple countersunk pre-holes are divided into multiple groups according to the processing order. After experimental verification, the size of 20-30 consecutive through grooves 110 will remain stable, and the influence of tool wear on the processing size can be ignored. In this way, 20-30 through grooves 110 can be grouped as a group. For example, assuming that there are 320 through grooves 110 in total, the 320 through grooves 110 can be divided into 16 groups. At this time, the size consistency of the 20 through grooves 110 in each group is good.

[0108] Next, the 20 countersunk pre-holes in the current group are ground in sequence to form the 20 through-grooves 110 of the current group. The current group refers to the 20 through-grooves 110 of the group being processed. Taking the current group as the first group as an example, the tool is first used to grind the 20 countersunk pre-holes of the first group to form 20 through-grooves 110.

[0109] Afterwards, the size of the last through groove 110 of the current group, i.e., the 20th through groove 110, is measured and compared with the preset size to obtain the groove compensation parameters of the next group. The groove compensation parameters may include, for example, the length compensation value and / or width compensation value of the through groove 110, and the preset size may be the design length and / or design width of the through groove 110. The size of the groove compensation parameter may be confirmed by multiplying the coefficient before the difference between the actual size and the preset size according to the wear of the tool, thereby obtaining the value of the groove compensation parameter, and the coefficient may be an empirical coefficient during processing. For example, assuming that the preset size of the through groove 110 is 61 mm in length and 2 mm in width, and the size of the 20th through groove 110 is 59.85 mm and 1.92 mm, then the difference between the actual size of the length and the preset size is 1.15 mm, and the difference between the actual size of the width and the preset size is 0.08; the coefficient may be, for example, 0.2, 0.4, 0.5, 0.8, etc., and may be flexibly designed according to the processing conditions.

[0110] Then, the groove compensation parameters are compensated to the processing parameters of the tool, and the tool with the compensated parameters is used to grind the next group of multiple countersunk pre-holes, thereby forming the next group of multiple through grooves 110.

[0111] Finally, the above steps are repeated continuously to complete the processing of all the through grooves 110 of all groups.

[0112] Based on the above process, it can be known that in this embodiment, during the processing of multiple through grooves 110 of any two adjacent groups, the groove compensation parameters will be set based on the comparison between the actual size of the through grooves 110 of the previous group and the preset size, and the groove compensation parameters will be compensated to the processing parameters of the tool, so that when the tool processes the through grooves 110 of the next group, the processing error caused by tool wear can be reduced, and the size of the through grooves 110 of the next group can be guaranteed to be highly consistent with the size of the through grooves 110 of the previous group. In other words, except for the first group, the processing of each group of through grooves 110 will be tool compensated, which is conducive to improving the consistency of the processing size of all through grooves 110 and the processing yield of through grooves 110. At the same time, it is also conducive to improving the continuity of processing. By adopting the above processing method, it can be guaranteed that the qualified rate of through grooves 110 is 100%, and the processing time is shortened by 48%, thereby greatly improving the processing efficiency and yield rate of through grooves 110.

[0113] It should be noted that the silicon electrode 10 of the first aspect of the present application is manufactured by the method for manufacturing the silicon electrode 10 described in the second aspect, and therefore also has all the beneficial effects brought by this method.

[0114] The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A method for manufacturing a silicon electrode, characterized in that: include: Providing a silicon electrode body; A plurality of countersunk pre-holes arranged at intervals are sequentially formed on the silicon electrode body along a circumferential direction; Dividing the plurality of countersunk pre-holes into a plurality of groups in accordance with a processing sequence; Grinding the plurality of countersunk pre-holes in the current group in sequence to form a plurality of through-grooves in the current group; Obtaining the size of the last through-groove in the current group and comparing it with a preset size to obtain the groove compensation parameters of the next group, wherein the groove compensation parameters include a length compensation value and / or a width compensation value of the through-groove, and the preset size is a designed length and / or a designed width of the through-groove; Compensating the length compensation value and / or width compensation value of the through groove into the processing parameters of the tool to perform parameter compensation on the tool; Grinding the plurality of countersunk pre-holes in the next group using the tool after parameter compensation to form a plurality of through grooves in the next group, each of which extends in the radial direction of the silicon electrode body, and has a first side and a second side that are oppositely disposed; The first edge and / or the second edge are rounded.

2. The method for manufacturing a silicon electrode according to claim 1, characterized in that: The step of rounding the first edge or the second edge comprises: Selecting one of the plurality of through grooves as a reference groove, and measuring a deviation angle between an extension direction of the reference groove and a preset first reference line; Rotating the silicon electrode body to return the deviation angle to zero; rounding the edge to be processed of the reference groove, wherein the edge to be processed is one of the first edge and the second edge; The remaining edges to be processed of the plurality of through grooves are rounded.

3. The method for manufacturing a silicon electrode according to claim 1, characterized in that: The step of rounding the first edge and the second edge comprises: Selecting one of the plurality of through grooves as a reference groove, and measuring a first deviation angle between an extension direction of the reference groove and a preset first reference line; Rotating the silicon electrode body to return the first deviation angle to zero; Rounding the first to-be-processed edge of the reference groove and the first to-be-processed edges of the remaining plurality of through grooves in sequence, wherein the first to-be-processed edge is one of the first edge and the second edge; Turning over the silicon electrode body; Measuring a second deviation angle between an extension direction of the reference groove and the first reference line; Rotating the silicon electrode body to return the second deviation angle to zero; The second edge to be processed of the reference groove and the second edges to be processed of the remaining plurality of through grooves are rounded in sequence, wherein the second edge to be processed is the other of the first edge and the second edge.

4. The method for manufacturing a silicon electrode according to claim 1, characterized in that: The mesh number of the tool is greater than 150 meshes and less than 250 meshes.

5. A silicon electrode, characterized in that: The silicon electrode is manufactured by the method for manufacturing the silicon electrode as described in any one of claims 1 to 4.

6. The silicon electrode according to claim 5, characterized in that: The radius of the fillet is greater than or equal to 0.2 mm and less than or equal to 0.5 mm.

7. The silicon electrode according to claim 5, characterized in that: The silicon electrode is a polycrystalline silicon electrode, a single crystal silicon electrode or a silicon carbide electrode.

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