Infrared feature response photomultiplier tube

Abstract

The application discloses an infrared characteristic response photomultiplier. The photomultiplier comprises a lens system (1), an infrared characteristic response photocathode (2), an electron multiplication system (3), an anode receiving plate (4), a shell (5), electrode wires and a bias voltage source. The shell (5) is provided with an opening, the lens system (1) is arranged at the opening to form a vacuum, the infrared characteristic response photocathode (2), the electron multiplication system (3) and the anode receiving plate (4) are all arranged inside the shell (5), the infrared characteristic response photocathode (2) is provided with a micro-nano structure on the surface, the micro-nano structure has plasmonic characteristics, the lens system (1) is used for focusing infrared light and emitting the focused infrared light to the micro-nano structure of the infrared characteristic response photocathode (2), the infrared characteristic response photocathode (2) is used for generating photoelectrons and emitting the photoelectrons to the electron multiplication system (3), the electron multiplication system (3) is used for receiving the photoelectrons and generating multiplied electrons, the anode receiving plate (4) is used for collecting the multiplied electrons to generate an anode current, the electrode wires pass through the shell (5), one end of the electrode wires is connected with the infrared characteristic response photocathode (2) and the electron multiplication system (3) respectively, and the other end of the electrode wires is connected with the bias voltage source. The photomultiplier can effectively respond to the wave band of infrared light.

Description

Technical Field

[0001] The present invention relates to the field of vacuum photoelectric detection, and more particularly to a photomultiplier tube with infrared characteristic response. Background Art

[0002] In recent years, demand for photoelectric detection of weak light signals in characteristic infrared bands has been growing in fields such as aerospace, biomedicine, industrial production, environmental monitoring, and scientific research. For example, in the biomedical field, hemoglobin has a characteristic absorption peak near 1 micron, and adipocytes have a characteristic peak at 2.1 microns due to the stretching vibrations of NH and CH. In the field of environmental monitoring, carbon monoxide has a significant absorption at 2.3 microns.

[0003] Photomultiplier tubes (PMTs) are key components that convert weak light signals into amplified electrical signals. They consist primarily of a photocathode, a dynode, and an anode substrate. Traditional PMTs primarily respond to ultraviolet and visible light, but are ineffective in infrared light.

[0004] A prior art discloses a photomultiplier tube. This photomultiplier tube comprises a cathode that releases electrons in response to incident light; a multistage dynode that releases electrons from the cathode; and an electrode forming an electron lens, which is positioned a predetermined distance from the edges of a first dynode and a second dynode. The first dynode is located first from the cathode, and the second dynode is located second from the cathode. The equipotential surface in the space between the first and second dynodes is flattened along the length of the first dynode. This photomultiplier tube does not effectively respond to infrared light. Summary of the Invention

[0005] The present invention addresses the defect in the prior art that the wavelength band of infrared light cannot be effectively responded to, and provides a photomultiplier tube with infrared characteristic response, which can effectively respond to the wavelength band of infrared light.

[0006] The primary purpose of the present invention is to solve the above technical problems, and the technical solutions of the present invention are as follows:

[0007] A photomultiplier tube with infrared characteristic response, characterized in that it comprises: a lens system, an infrared characteristic response photocathode, an electron multiplication system, an anode receiving plate, a housing, an electrode line and a bias voltage source;

[0008] The housing is provided with an opening, and the lens system is arranged at the opening to form a vacuum;

[0009] The infrared characteristic response photocathode, electron multiplication system, and anode receiving plate are all arranged inside the housing;

[0010] The surface of the infrared characteristic response photocathode is provided with a micro-nano structure, and the micro-nano structure has plasmon characteristics;

[0011] The lens system is used to focus the infrared light and emit the focused infrared light onto the micro-nano structure of the infrared characteristic response photocathode;

[0012] The infrared characteristic response photocathode is used to generate photoelectrons and emit the photoelectrons to the electron multiplication system;

[0013] The electron multiplication system is used to receive photoelectrons and generate multiplied electrons;

[0014] The anode receiving plate is used to collect the multiplied electrons to generate anode current;

[0015] The electrode wire passes through the shell, one end of the electrode wire is connected to the infrared characteristic response photocathode and the electron multiplication system respectively, and the other end of the electrode wire is connected to the bias voltage source.

[0016] Furthermore, the infrared characteristic response photocathode has at least one tip, the tip faces the electron multiplying system, and the photoelectrons are emitted from the tip to the electron multiplying system.

[0017] Furthermore, the micro-nano structure is a combination of any one or more of a rectangular grating, a blazed grating, and a two-dimensional photonic crystal periodic structure.

[0018] Furthermore, it also includes a cathode base, which is arranged on the inner wall of the shell, the end of the infrared characteristic response photocathode away from the electron multiplication system is connected to the cathode base, and one end of the electrode wire is connected to the cathode base.

[0019] Furthermore, the material of the infrared characteristic response photocathode is any one or more combinations of refractory metals and their oxides having plasmon properties.

[0020] Furthermore, the electron multiplying system includes multiple electron multiplying substrates, which are arranged in an interlaced manner; each electron multiplying substrate is connected to a bias voltage source through an electrode line, and photoelectrons are accelerated and multiplied by multiple reflections in the multiple electron multiplying substrates.

[0021] Furthermore, the electron multiplying substrate is connected to an external bias voltage through an electrode line, and the electron multiplying substrate is any one or more of a microchannel plate, a semiconductor diode, a semiconductor avalanche diode, and an electron multiplier.

[0022] Furthermore, the surface of the electron multiplying substrate is coated with a material that can generate secondary electron emission.

[0023] Furthermore, the lens system includes a glass lens.

[0024] Furthermore, the surface of the glass lens has a filter layer.

[0025] Compared with the prior art, the present invention has the following beneficial effects:

[0026] The present invention effectively responds to the wavelength band of infrared light by arranging an infrared characteristic response photocathode and arranging a micro-nano structure on the surface of the infrared characteristic response photocathode. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 1.

[0028] Figure 2 A side view of a photomultiplier tube with infrared characteristic response provided in Example 1.

[0029] Figure 3 A front view of the conical infrared characteristic response photocathode with a rectangular grating provided in Example 1.

[0030] Figure 4 A top view of the conical infrared characteristic response photocathode with a rectangular grating provided in Example 1.

[0031] Figure 5 A side view of the conical infrared characteristic response photocathode with a rectangular grating provided in Example 1.

[0032] Figure 6 This is a front view of the pyramidal infrared characteristic response photocathode with a rectangular grating provided in Example 1.

[0033] Figure 7 A top view of the pyramidal infrared characteristic response photocathode with a rectangular grating provided in Example 1.

[0034] Figure 8 A side view of the pyramidal infrared characteristic response photocathode with a rectangular grating provided in Example 1.

[0035] Figure 9 A front view of the infrared characteristic response photocathode provided in Example 1, which is a combination of prisms and pyramids and has a rectangular grating.

[0036] Figure 10 A top view of the infrared characteristic response photocathode provided in Example 1, which is a combination of prisms and pyramids and has a rectangular grating.

[0037] Figure 11 A side view of the infrared characteristic response photocathode provided in Example 1, which is a combination of prisms and pyramids and has a rectangular grating.

[0038] Figure 12 A front view of the infrared characteristic response photocathode provided in Example 1, which is a combination of a cylinder and a cone and has a rectangular grating.

[0039] Figure 13 A top view of the infrared characteristic response photocathode provided in Example 1, which is a combination of a cylinder and a cone and has a rectangular grating.

[0040] Figure 14 A side view of the infrared characteristic response photocathode provided in Example 1, which is a combination of a cylindrical and a conical structure and has a rectangular grating.

[0041] Figure 15 A front view of the conical infrared characteristic response photocathode with a blazed grating provided in Example 1.

[0042] Figure 16 A top view of the conical infrared characteristic response photocathode with a blazed grating provided in Example 1.

[0043] Figure 17 A side view of the conical infrared characteristic response photocathode with a blazed grating provided in Example 1.

[0044] Figure 18 A front view of the pyramidal infrared characteristic response photocathode with a blazed grating provided in Example 1.

[0045] Figure 19 A top view of the pyramidal infrared characteristic response photocathode with a blazed grating provided in Example 1.

[0046] Figure 20 A side view of the pyramidal infrared characteristic response photocathode with a blazed grating provided in Example 1.

[0047] Figure 21 A front view of the infrared characteristic response photocathode provided in Example 1, which is a combination of prisms and pyramids with a blazed grating.

[0048] Figure 22 A top view of the infrared characteristic response photocathode comprising a combination of prisms and pyramids with a blazed grating provided in Example 1.

[0049] Figure 23 A side view of the infrared characteristic response photocathode comprising a combination of prisms and pyramids with a blazed grating provided in Example 1.

[0050] Figure 24 A front view of the infrared characteristic response photocathode provided in Example 1, which is a combination of a cylinder and a cone and has a blazed grating.

[0051] Figure 25A top view of the infrared characteristic response photocathode comprising a combination of a cylinder and a cone with a blazed grating provided in Example 1.

[0052] Figure 26 A side view of the infrared characteristic response photocathode comprising a combination of a cylinder and a cone with a blazed grating provided in Example 1.

[0053] Figure 27 This is a front view of the conical infrared characteristic response photocathode with a two-dimensional photonic crystal periodic structure provided in Example 1.

[0054] Figure 28 A top view of the conical infrared characteristic response photocathode with a two-dimensional photonic crystal periodic structure provided in Example 1.

[0055] Figure 29 A side view of the conical infrared characteristic response photocathode with a two-dimensional photonic crystal periodic structure provided in Example 1.

[0056] Figure 30 This is a front view of the pyramid infrared characteristic response photocathode with a two-dimensional photonic crystal periodic structure provided in Example 1.

[0057] Figure 31 A top view of the pyramid infrared characteristic response photocathode with a two-dimensional photonic crystal periodic structure provided in Example 1.

[0058] Figure 32 A side view of the pyramid infrared characteristic response photocathode with a two-dimensional photonic crystal periodic structure provided in Example 1.

[0059] Figure 33 This is a front view of the infrared characteristic response photocathode provided in Example 1, which is a combination of prisms and pyramids with a two-dimensional photonic crystal periodic structure.

[0060] Figure 34 A top view of the infrared characteristic response photocathode provided in Example 1, which is a combination of prisms and pyramids having a two-dimensional photonic crystal periodic structure.

[0061] Figure 35 A side view of the infrared characteristic response photocathode provided in Example 1, which is a combination of prisms and pyramids having a two-dimensional photonic crystal periodic structure.

[0062] Figure 36 This is a front view of the infrared characteristic response photocathode provided in Example 1, which is a combination of cylinders and cones with a two-dimensional photonic crystal periodic structure.

[0063] Figure 37A top view of the infrared characteristic response photocathode provided in Example 1, which is a combination of cylinders and cones and has a two-dimensional photonic crystal periodic structure.

[0064] Figure 38 A side view of the infrared characteristic response photocathode provided in Example 1, which is a combination of cylinders and cones and has a two-dimensional photonic crystal periodic structure.

[0065] Figure 39 This is an electron microscope image of the infrared characteristic response photocathode of the combination of cylinder and cone provided in Example 1.

[0066] Figure 40 This is an electron microscope image of the photocathode material grown on the sapphire substrate provided in Example 1.

[0067] Figure 41 This is an electron microscope image of the photocathode with infrared characteristic response provided in Example 1.

[0068] Figure 42 This is an electron microscope image of the head end of the tungsten needle cathode base provided in Example 1.

[0069] Figure 43 This is an electron microscope image of the deposited platinum metal near the contact point provided in Example 1.

[0070] Figure 44 This is an electron microscope image of the infrared characteristic response photocathode 2 provided in Example 1.

[0071] Figure 45 This is an electron microscope image of the grating structure of the infrared characteristic response photocathode 2 provided in Example 1.

[0072] Figure 46 This is a broken line graph of the volt-ampere characteristic curve provided in Example 1 under different light intensities.

[0073] Figure 47 This is the infrared characteristic response characteristic diagram provided in Example 1.

[0074] Figure 48 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 2.

[0075] Figure 49 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 3.

[0076] Figure 50 A side view of a photomultiplier tube with infrared characteristic response provided in Example 3.

[0077] Figure 51 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 4.

[0078] Figure 52 A side view of a photomultiplier tube with infrared characteristic response provided in Example 4.

[0079] Figure 53 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 5.

[0080] Figure 54 A side view of a photomultiplier tube with infrared characteristic response provided in Example 5.

[0081] Figure 55 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 6.

[0082] Figure 56 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 7.

[0083] Figure 57 A side view of a photomultiplier tube with infrared characteristic response provided in Example 7.

[0084] Figure 58 A cross-sectional view of a photomultiplier tube with infrared characteristic response provided in Example 8.

[0085] Figure 59 A side view of a photomultiplier tube with infrared characteristic response provided in Example 8. DETAILED DESCRIPTION

[0086] The accompanying drawings are for illustrative purposes only and are not to be construed as limiting this patent;

[0087] In order to better illustrate this embodiment, some parts in the drawings may be omitted, enlarged, or reduced, and do not represent the actual product size;

[0088] It is understandable to those skilled in the art that some well-known structures and descriptions thereof may be omitted in the drawings.

[0089] The technical solution of the present invention is further described below with reference to the accompanying drawings and embodiments.

[0090] Example 1

[0091] like Figure 1 、 Figure 2 As shown, a photomultiplier tube with infrared characteristic response is characterized by comprising: a lens system 1, an infrared characteristic response photocathode 2, an electron multiplication system 3, an anode receiving plate 4, a housing 5, an electrode line and a bias voltage source;

[0092] The housing 5 is provided with an opening, and the lens system 1 is provided at the opening to form a vacuum;

[0093] The infrared characteristic response photocathode 2, the electron multiplication system 3, and the anode receiving plate 4 are all arranged inside the housing;

[0094] The surface of the infrared characteristic response photocathode 2 is provided with a micro-nano structure, and the micro-nano structure has plasmon characteristics;

[0095] The lens system 1 is used to focus infrared light and emit the focused infrared light onto the micro-nano structure of the infrared characteristic response photocathode 2;

[0096] The infrared characteristic response photocathode 2 is used to generate photoelectrons and emit the photoelectrons to the electron multiplication system 3;

[0097] The electron multiplication system 3 is used to receive photoelectrons and generate multiplied electrons;

[0098] The anode receiving plate 4 is used to collect the multiplied electrons to generate anode current;

[0099] The electrode wire passes through the housing 5 , one end of the electrode wire is connected to the infrared characteristic response photocathode 2 and the electron multiplication system 3 respectively, and the other end of the electrode wire is connected to the bias voltage source.

[0100] In a specific embodiment, the shell 5 is exhausted and vacuum packaged, and the vacuum degree is 10 -5 ~10 -4 Order of magnitude.

[0101] It should be noted that by introducing plasmon properties, flexible regulation of the electron emission light response in specific infrared light bands can be achieved. Utilizing the photon absorption enhancement characteristics of plasmons can improve the material's absorption efficiency of incident photons, significantly reduce the excitation threshold of the photocathode, and make it easier for photon energy to excite electrons, thereby improving the photoelectric conversion efficiency. In addition, plasmons also have local electric field resonance enhancement characteristics, which can significantly enhance the light response within a specific frequency range. By designing a resonant structure that matches the photocathode material, selective enhancement and regulation of infrared light of specific wavelengths can be achieved, so that the photocathode has a higher photoelectric response at these characteristic frequencies. Utilizing plasmon properties, the response spectrum of the photocathode can be expanded, enabling it to effectively respond to photons of specific wavelengths in the infrared band, and realizing sensitive detection of the infrared spectrum.

[0102] It should be noted that using bias voltage to increase the external electric field can not only reduce the equivalent work function of the emitter, but also when the electric field strength reaches a certain level, obvious tunnel electron emission will occur, thereby improving the electron emission ability of the cathode material and significantly reducing the frequency and power requirements of the detection light.

[0103] Furthermore, the infrared characteristic response photocathode 2 has at least one tip, the tip faces the electron multiplying system 3 , and the photoelectrons are emitted from the tip to the electron multiplying system 3 .

[0104] Furthermore, the micro-nano structure is a combination of any one or more of a rectangular grating, a blazed grating, and a two-dimensional photonic crystal periodic structure.

[0105] Furthermore, it also includes a cathode base, which is arranged on the inner wall of the shell, and the end of the infrared characteristic response photocathode 2 away from the electron multiplication system 3 is connected to the cathode base, and one end of the electrode wire is connected to the cathode base.

[0106] Furthermore, the material of the infrared characteristic response photocathode 2 is any one or more combinations of refractory metals and their oxides having plasmon properties.

[0107] It should be noted that using high-melting-point metals such as tungsten and molybdenum, and their oxides, as photocathodes for photomultiplier tubes offers excellent physical and chemical stability at high temperatures, as well as high laser damage thresholds and electric field breakdown thresholds, significantly increasing the device's damage resistance.

[0108] It should be noted that, under the action of an external bias voltage, the potential barrier at the tip of the micron-cone photocathode material of the infrared characteristic response photocathode 2 is bent, and the electrons at the tip are in a critical state of escaping from the metal molybdenum micron-cone tip.

[0109] In a specific embodiment, the infrared characteristic response photocathode 2 is made of a single single crystal metal molybdenum micron cone photocathode material. The tip of the micron cone photocathode material faces the electron multiplication system and is on the same horizontal plane as the electron multiplication system. There is an artificially prepared one-dimensional grating structure on the surface of the micron cone photocathode material. The grating structure and the lens system 1 are located on the same vertical plane and are used to receive the focused infrared light. The tail end of the micron cone photocathode material is welded to the tungsten needle cathode base and is connected to the external bias voltage through an electrode line. Under the coupling of infrared light and the artificially prepared one-dimensional grating, the infrared characteristic response photocathode 2 induces surface plasmon polariton resonance, and the electrons on the metal molybdenum surface produce collective oscillations and gain kinetic energy. The cone tip electrons in the critical state escape from the surface of the metal photocathode material to form photogenerated electrons.

[0110] Furthermore, the electron multiplying system 3 includes a plurality of electron multiplying substrates, which are staggered; each of the electron multiplying substrates is connected to a bias voltage source via an electrode line, and photoelectrons are accelerated and multiplied by multiple reflections in the plurality of electron multiplying substrates.

[0111] Furthermore, the electron multiplying substrate is connected to an external bias voltage through an electrode line, and the electron multiplying substrate is any one or more of a microchannel plate, a semiconductor diode, a semiconductor avalanche diode, and an electron multiplier.

[0112] Furthermore, the surface of the electron multiplying substrate is coated with a material that can generate secondary electron emission.

[0113] It should be noted that one end of the electron multiplication system faces the infrared-responsive photocathode, receiving photogenerated electrons, while the other end faces the anode receiving plate, outputting multiplied electrons. The bias voltage creates an accelerating electric field between each pair of electron multiplication substrates, accelerating and multiplying the photogenerated electrons escaping the infrared-responsive photocathode surface, producing a large number of multiplied electrons.

[0114] Furthermore, the lens system 1 includes a glass lens.

[0115] Furthermore, the surface of the glass lens has a filter layer.

[0116] In a specific embodiment, the infrared characteristic responsive photocathode 2 is a combination of any one or more of a cylinder, a prism, a cone, and a pyramid. The infrared characteristic responsive photocathode 2 at least combines a cone or a pyramid to realize at least one pointed structure.

[0117] In a specific embodiment, the conical infrared characteristic response photocathode 2 having a rectangular grating is as follows: Figure 3 、 Figure 4 、 Figure 5 As shown, the pyramid infrared characteristic response photocathode 2 with rectangular grating is as shown in FIG. Figure 6 、 Figure 7 、 Figure 8 As shown, the infrared characteristic response photocathode 2 having a combination of a prism and a pyramid with a rectangular grating is as shown in FIG. Figure 9 、 Figure 10 、 Figure 11 As shown, the infrared characteristic response photocathode 2 of the combination of a cylinder and a cone with a rectangular grating is as shown in FIG. Figure 12 、 Figure 13 、 Figure 14 shown.

[0118] In a specific embodiment, the conical infrared characteristic response photocathode 2 with a blazed grating is as follows: Figure 15 、 Figure 16 、 Figure 17 As shown, the pyramid infrared characteristic response photocathode 2 with blazed grating is as shown in FIG. Figure 18 、 Figure 19 、 Figure 20 As shown, the infrared characteristic response photocathode 2 having a combination of a prism and a pyramid with a blazed grating is as shown in FIG. Figure 21 、 Figure 22、 Figure 23 As shown, the infrared characteristic response photocathode 2 of the combination of the cylinder and cone with the blazed grating is as follows Figure 24 、 Figure 25 、 Figure 26 shown.

[0119] In a specific embodiment, the cone infrared characteristic response photocathode 2 having a two-dimensional photonic crystal periodic structure is as follows Figure 27 、 Figure 28 、 Figure 29 As shown, the infrared characteristic response photocathode 2 of the pyramid with a two-dimensional photonic crystal periodic structure is as follows Figure 30 、 Figure 31 、 Figure 32 As shown, the infrared characteristic response photocathode 2 having a two-dimensional photonic crystal periodic structure of a prism and a pyramid is as shown in FIG. Figure 33 、 Figure 34 、 Figure 35 As shown, the infrared characteristic response photocathode 2 with the combination of cylinder and cone having a two-dimensional photonic crystal periodic structure is as follows Figure 36 、 Figure 37 、 Figure 38 shown.

[0120] The infrared characteristic response of the combination of cylinder and cone is shown in Figure 2. Figure 39 shown.

[0121] In a specific embodiment, a method for manufacturing a photocathode with infrared characteristic response includes:

[0122] S1: If Figure 40 As shown, the photocathode material is grown on a sapphire substrate;

[0123] S2: If Figure 41 As shown, the photocathode material is selected and picked using a nanomanipulator and welded to a tungsten needle cathode base to form a photocathode 2 with infrared characteristic response;

[0124] S3: If Figure 42 As shown, the front end of the tungsten needle cathode base is milled to form a horizontal stage using focused ion beam etching technology, and the rear end of the tungsten needle cathode base is connected to the electrode wire and an external bias voltage.

[0125] S4: As Figure 43 As shown, the nanomanipulator drives the infrared characteristic response photocathode 2 to move to the horizontal stage of the tungsten needle tip cathode base; at the same time, metal platinum is deposited near the contact point through the gas deposition system;

[0126] S5: If Figure 44As shown, metal platinum atoms are deposited at the connection between the infrared characteristic response photocathode 2 and the horizontal stage of the tungsten needle tip cathode base to fix the infrared characteristic response photocathode 2;

[0127] S6: As Figure 45 As shown, the grating structure of the infrared characteristic responsive photocathode 2 is prepared by a focused ion beam etching system.

[0128] In a specific embodiment, the grating period in step S6 is 1.48 microns, and the groove gap is 400 nanometers, for efficient absorption of 1.55 micron infrared.

[0129] The volt-ampere characteristic curves of the present invention under different light intensities are as follows Figure 46 As shown. When the light intensity is 0, there is no current response. As the light intensity increases to 30.03W / cm 2 When the current response begins, the light intensity continues to increase to 34.87W / cm 2 , the current response characteristics are significantly enhanced.

[0130] The infrared characteristic response characteristics of the present invention are as follows Figure 47 As shown in Figure 2, at 1.55 microns, the local field intensity is the strongest and the energy decays the slowest. By setting specific artificial microstructures, directional selection of infrared light can be achieved.

[0131] Example 2

[0132] Based on the infrared characteristic response photomultiplier tube described in Example 1, that is, this embodiment uses the same infrared characteristic response photomultiplier tube as that in Example 1. Figure 48 As shown, the micro-nano structure is a blazed grating. The housing 5 is a prism.

[0133] Example 3

[0134] Based on the infrared characteristic response photomultiplier tube described in Example 1, that is, this embodiment uses the same infrared characteristic response photomultiplier tube as that in Example 1. Figure 49 、 Figure 50 As shown, the housing 5 is a cylinder.

[0135] Example 4

[0136] Based on the infrared characteristic response photomultiplier tube described in Example 1, that is, this embodiment uses the same infrared characteristic response photomultiplier tube as that in Example 1. Figure 51 、 Figure 52 As shown, the shell 5 is an ellipsoid.

[0137] Example 5

[0138] Based on the infrared characteristic response photomultiplier tube described in Example 1, that is, this embodiment uses the same infrared characteristic response photomultiplier tube as that in Example 1. Figure 53 、 Figure 54 As shown, the lens system 1 includes a reflector, and the infrared light focused by the glass lens is reflected by the reflector onto the micro-nano structure of the infrared characteristic response photocathode 2.

[0139] Example 6

[0140] Based on the infrared characteristic response photomultiplier tube described in Example 5, that is, this embodiment uses the same infrared characteristic response photomultiplier tube as that in Example 5. Figure 55 As shown, the micro-nano structure is a blazed grating. The housing 5 is a prism.

[0141] Example 7

[0142] Based on the infrared characteristic response photomultiplier tube described in Example 5, that is, this embodiment uses the same infrared characteristic response photomultiplier tube as that in Example 5. Figure 56 、 Figure 57 As shown, the housing 5 is a cylinder.

[0143] Example 8

[0144] Based on the infrared characteristic response photomultiplier tube described in Example 5, that is, this embodiment uses the same infrared characteristic response photomultiplier tube as that in Example 5. Figure 58 、 Figure 59 As shown, the shell 5 is an ellipsoid.

[0145] The same or similar reference numerals correspond to the same or similar components;

[0146] The terms used in the drawings to describe positional relationships are for illustrative purposes only and should not be construed as limiting this patent;

[0147] Obviously, the above embodiments of the present invention are merely examples for the purpose of clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Those skilled in the art will appreciate that other variations or modifications can be made based on the above description. It is not necessary and impossible to enumerate all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the claims of the present invention.

Claims

1. A photomultiplier tube with infrared characteristic response, characterized in that: include: Lens system (1), infrared characteristic response photocathode (2), electron multiplication system (3), anode receiving plate (4), housing (5), electrode wires and bias voltage source; The housing (5) is provided with an opening, and the lens system (1) is arranged at the opening to form a vacuum; The infrared characteristic response photocathode (2), the electron multiplication system (3), and the anode receiving plate (4) are all arranged inside the housing; The surface of the infrared characteristic response photocathode (2) is provided with a micro-nano structure, and the micro-nano structure has plasmon characteristics; The lens system (1) is used to focus infrared light and emit the focused infrared light onto the micro-nano structure of the infrared characteristic response photocathode (2); The infrared characteristic response photocathode (2) is used to generate photoelectrons and emit the photoelectrons to the electron multiplication system (3); The electron multiplication system (3) is used to receive photoelectrons and generate multiplied electrons; The anode receiving plate (4) is used to collect the multiplied electrons and generate an anode current; The electrode wire passes through the housing (5), one end of the electrode wire is connected to the infrared characteristic response photocathode (2) and the electron multiplication system (3), and the other end of the electrode wire is connected to the bias voltage source; The infrared characteristic response photocathode (2) has at least one tip, the tip is directed toward the electron multiplying system (3), and the photoelectrons are emitted from the tip to the electron multiplying system (3); The micro-nano structure is a combination of any one or more of a rectangular grating, a blazed grating, and a two-dimensional photonic crystal periodic structure.

2. The photomultiplier tube with infrared characteristic response according to claim 1, characterized in that: It also includes a cathode base, which is arranged on the inner wall of the shell, one end of the infrared characteristic response photocathode (2) away from the electron multiplication system (3) is connected to the cathode base, and one end of the electrode wire is connected to the cathode base.

3. The photomultiplier tube with infrared characteristic response according to claim 2, characterized in that: The material of the infrared characteristic response photocathode (2) is any one or more combinations of refractory metals and their oxides having plasmon characteristics.

4. The photomultiplier tube with infrared characteristic response according to claim 1, characterized in that: The electron multiplying system (3) comprises a plurality of electron multiplying substrates, which are arranged in an interlaced manner; each of the electron multiplying substrates is connected to a bias voltage source via an electrode line, and photoelectrons are accelerated and multiplied by multiple reflections in the plurality of electron multiplying substrates.

5. The photomultiplier tube with infrared characteristic response according to claim 4, characterized in that: The electron multiplying substrate is connected to an external bias voltage through an electrode line. The electron multiplying substrate is any one or more of a microchannel plate, a semiconductor avalanche diode, and an electron multiplier.

6. The photomultiplier tube with infrared characteristic response according to claim 5, characterized in that: The surface of the electron multiplying substrate is coated with a material that can generate secondary electron emission.

7. The photomultiplier tube with infrared characteristic response according to claim 1, characterized in that: The lens system (1) comprises a glass lens.

8. The photomultiplier tube with infrared characteristic response according to claim 7, characterized in that: The surface of the glass lens is provided with a filter layer.

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