Preparation method of titanium nitride film and metal interconnection structure

Abstract

The invention provides a preparation method of a titanium nitride thin film and a metal interconnection structure, and the method comprises the steps: carrying out the plasma treatment of a titanium nitride thin film layer after the titanium nitride thin film layer is formed through ALD, and enabling the plasma used in the plasma treatment to comprise ions formed by inert gas and nitrogen ions, because the inert gas does not participate in the reaction, the chemical bond of titanium nitride can be broken by utilizing the physical bombardment effect of the inert gas, and meanwhile, the provided nitrogen ion complement position is recombined with the broken chemical bond to form a new titanium nitride chemical bond, and the process is equivalent to scattering the original titanium nitride crystal lattice through the ions formed by the inert gas; according to the method, ion diffusion channels which are arranged in order originally are closed, scattered crystal lattices are filled with ionized nitrogen ions, and formed new titanium nitride crystal lattices are disordered, so that the ion diffusion difficulty is improved, namely, the blocking performance of a titanium nitride thin film layer formed by an ALD process is improved.

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