Method for manufacturing display device and display device

Abstract

The invention relates to a method for manufacturing a display device and the display device. A method of manufacturing a display device includes: providing a carrier module including a carrier wafer and a light emitting element; disposing a carrier module on the transparent electrode assembly; inspecting the light-emitting element; and transferring the light emitting element onto the pixel circuit layer after inspecting the light emitting element.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Korean Patent Application No. 10-2023-0094813, filed on Jul. 20, 2023, and all rights arising therefrom, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] The present disclosure generally relates to a method of manufacturing a display device and a display device. Background Art

[0004] Recently, as interest in information display increases, research and development of display devices have been continuously conducted.

[0005] The display device may include a light emitting element. In the process of manufacturing the display device, a process of manufacturing the light emitting element and transferring the light emitting element to a bottom plate layer or the like of the display device may be performed.

[0006] In order to ensure uniformity in quality of the display device, an inspection process may be performed on the light emitting element during a process of manufacturing the display device. Summary of the invention

[0007] In the process of manufacturing the display device, it is desirable to supply an electrical signal for light emission to the light emitting element to perform an inspection process on the light emitting element. However, it may be difficult to perform the inspection process before the light emitting element is transferred to the backplane layer.

[0008] Embodiments provide a method of manufacturing a display device and a display device that reduce a failure rate of a light emitting element and thereby improve process efficiency.

[0009] Embodiments also provide a method of manufacturing a display device and a display device that can appropriately perform an inspection process on a light emitting element.

[0010] According to an embodiment of the present disclosure, a method for manufacturing a display device includes: providing a carrier module including a carrier wafer and a light emitting element; setting the carrier module on a transparent electrode assembly; inspecting the light emitting element; and after inspecting the light emitting element, transferring the light emitting element to a pixel circuit layer.

[0011] In an embodiment, providing a carrier module may include: growing a semiconductor layer on a growth substrate; providing light-emitting elements by etching the semiconductor layer, wherein the light-emitting elements may be spaced apart from each other and each of the light-emitting elements may include a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; connecting the light-emitting elements and a carrier wafer to each other; and separating the light-emitting elements and the growth substrate from each other.

[0012] In an embodiment, the carrier wafer may include silicon (Si).

[0013] In embodiments, the carrier wafer may be electrically conductive.

[0014] In an embodiment, providing the carrier module may further include: providing a bonding electrode in a pattern shape on the carrier wafer; and providing a reflective electrode in a pattern shape on the semiconductor layer.

[0015] In an embodiment, the transparent electrode assembly may include a glass substrate and an electrode disposed on the glass substrate. In such an embodiment, the electrode may include: a first electrode extending in a first extension direction; and a second electrode extending in a second extension direction different from the first extension direction, wherein the second electrode may be integrally formed with the first electrode as a single integral and inseparable part.

[0016] In an embodiment, the first electrode and the second electrode may intersect each other in the intersection region. In such an embodiment, the intersection region may be arranged in a matrix form, wherein the row direction may be the first extension direction, and the column direction may be the second extension direction.

[0017] In an implementation, the glass substrate may include a glass material, and the electrode may include a transparent electrode material.

[0018] In an embodiment, inspecting the light emitting element may include supplying power to the electrode so that the power is supplied to the light emitting element.

[0019] In an embodiment, supplying power to the electrode may include supplying power to a pad connected to the electrode via a power supply pin by a power applying unit.

[0020] In an embodiment, inspecting the light emitting element may include applying an electrical signal to the light emitting element for allowing the light emitting element to emit light.

[0021] In an embodiment, inspecting the light emitting element may further include: acquiring visual information related to the light emitting element. In such an embodiment, the visual information may include mapping information of the light emitting element on the transparent electrode assembly and information related to whether the light emitting element emits light for each of the positions where the light emitting element is disposed.

[0022] In an embodiment, the mapping information may be predetermined based on a matrix form defined by the intersection areas.

[0023] In an embodiment, the method may further include: repairing at least one of the light emitting elements. In such an embodiment, the repair may be performed after inspecting the light emitting element, and may be performed before transferring the light emitting element to the pixel circuit layer.

[0024] In an embodiment, inspecting the light-emitting elements may further include: determining at least one of the light-emitting elements as an abnormal light-emitting element that emits abnormal light; and determining other light-emitting elements of the light-emitting elements as normal light-emitting elements that emit normal light. In such an embodiment, repairing may include: individually repairing at least one of the light-emitting elements that is determined to be an abnormal light-emitting element.

[0025] In an embodiment, inspecting the light-emitting elements may further include: determining at least one of the light-emitting elements as an abnormal light-emitting element that emits abnormal light; and determining other light-emitting elements of the light-emitting elements as normal light-emitting elements that emit normally. In such an embodiment, repairing may include: repairing at least one of the light-emitting elements that is determined to be an abnormal light-emitting element for an area including abnormal light-emitting elements at a predetermined ratio or higher.

[0026] In an embodiment, transferring the light emitting element onto the pixel circuit layer may include removing a carrier wafer in the carrier module and disposing the light emitting element onto the pixel circuit layer.

[0027] According to an embodiment of the present disclosure, a display device is manufactured by the method.

[0028] In an implementation, the pixel circuit layer may include a pixel circuit, and the light emitting element may be electrically connected to the pixel circuit.

[0029] In an embodiment, each of the light emitting elements may be a micro light emitting diode (LED). BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and other features of the present invention will become more apparent by describing the embodiments of the present invention in more detail with reference to the accompanying drawings, in which:

[0031] Figure 1 is a schematic plan view showing a display device according to an embodiment of the present disclosure;

[0032] Figure 2 is a schematic cross-sectional view showing a display device according to an embodiment of the present disclosure;

[0033] Figure 3 is a flowchart illustrating a method of manufacturing a display device according to an embodiment of the present disclosure;

[0034] Figures 4 to 9 is a schematic process view showing a process of providing a carrier module according to an embodiment of the present disclosure;

[0035] Fig.10 and Fig.11is a process view showing a process of disposing a carrier module on a transparent electrode assembly according to an embodiment of the present disclosure;

[0036] Figures 12 to 15 is a process view showing a process of inspecting a light emitting element according to an embodiment of the present disclosure; and

[0037] Fig.16 and Fig.17 is a schematic diagram illustrating a process of transferring a light emitting element according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0038] The present invention will now be described more fully below with reference to the accompanying drawings, in which various embodiments are shown. However, the present invention can be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. The same reference numerals represent the same elements throughout.

[0039] It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may be present therebetween. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present.

[0040] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Therefore, without departing from the teachings of the present disclosure, the "first" element discussed below may also be referred to as the "second" element.

[0041] The terms used herein are only used for the purpose of describing a specific embodiment, rather than being intended to be limited. As used herein, "one", "the", "the" and "at least one" do not represent the limitation of quantity, and are intended to include both the singular and the plural, unless the context clearly indicates otherwise. Therefore, the mention of "one" element in the claim after mentioning "the" element includes one element and multiple elements. For example, "an element" has the same meaning as "at least one element", unless the context clearly indicates otherwise. "At least one" will not be interpreted as limiting "one" or "one". "Or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the related listed items. It will also be understood that the term "including" and / or "including" or "including" and / or "including" when used in this specification, represents the existence of the stated features, regions, wholes, steps, operations, elements and / or parts, but does not exclude the existence or addition of one or more other features, regions, wholes, steps, operations, elements, parts and / or its groups.

[0042] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element as shown in the figure. It will be understood that, in addition to the orientations depicted in the accompanying drawings, relative terms are intended to include different orientations of the device. For example, if the device in one of the accompanying drawings is turned over, the element described as being on the "lower" side of the other elements will then be oriented on the "upper" side of the other elements. Therefore, the term "lower" can include both "lower" and "upper" orientations, depending on the specific orientation of the accompanying drawings. Similarly, if the device in one of the accompanying drawings is turned over, the element described as being "below" or "below" the other elements will then be oriented "above" the other elements. Therefore, the term "below" or "below" can include both upper and lower orientations.

[0043] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those of ordinary skill in the art to which the present disclosure belongs. It will also be understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless explicitly so defined herein.

[0044] Embodiments are described herein with reference to schematically illustrated cross-sectional illustrations of idealized embodiments. Thus, deviations from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are expected. Therefore, the embodiments described herein should not be interpreted as being limited to regions of a particular shape as shown herein, but will include deviations in shape due to, for example, manufacturing. For example, regions shown or described as flat may typically have rough and / or nonlinear features. In addition, the sharp corners shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to represent the precise shape of the regions, and are not intended to limit the scope of the claims.

[0045] The present disclosure generally relates to a method of manufacturing a display device and a display device. Hereinafter, a method of manufacturing a display device and a display device according to embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0046] Reference Figure 1 and Figure 2 A display device DD according to an embodiment of the present disclosure is described.

[0047] Figure 1 is a schematic plan view showing a display device according to an embodiment of the present disclosure.

[0048] refer to Figure 1 , an embodiment of the display device DD may include a base layer BSL and pixels PXL arranged on the base layer BSL. Although not shown in the drawings, the display device DD may further include a driving circuit portion (eg, a scan driver and a data driver), lines, and pads for driving the pixels PXL.

[0049] The display device DD (or base layer BSL) may include a display area DA and a non-display area NDA. In such an embodiment, the display area DA and the non-display area NDA may be defined in the display device DD or defined on the base layer BSL. The non-display area NDA may mean an area other than the display area DA. The non-display area NDA may surround at least a portion of the display area DA.

[0050] The base layer BSL may form a base surface of the display device DD. The base layer BSL may be a rigid or flexible substrate or film. In an embodiment, for example, the base layer BSL may be a rigid substrate including or made of glass or tempered glass, or may be a flexible substrate (or film) made of a plastic or metal material, or may be at least one insulating layer. The material and / or properties of the base layer BSL are not particularly limited. In an embodiment, the base layer BSL may be substantially transparent. The term "substantially transparent" may mean that light can be transmitted at a predetermined transmittance or greater. In another embodiment, the base layer BSL may be translucent or opaque. In addition, in some embodiments, the base layer BSL may include a reflective material.

[0051] The display area DA may mean an area in which the pixels PXL are disposed. The non-display area NDA may mean an area in which the pixels PXL are not disposed. Driving circuits, lines, and pads connected to the pixels PXL in the display area DA may be disposed in the non-display area NDA.

[0052] According to an embodiment, the pixel PXL (or the sub-pixel SPX) may be arranged according to a stripe structure, However, the present disclosure is not limited thereto, and various embodiments can be applied in the present disclosure.

[0053] According to an embodiment, the pixel PXL (or sub-pixel SPX) may include a first sub-pixel SPXL1, a second sub-pixel SPXL2, and a third sub-pixel SPXL3. Each of the first sub-pixel SPXL1, the second sub-pixel SPXL2, and the third sub-pixel SPXL3 may be a sub-pixel. At least one first sub-pixel SPXL1, at least one second sub-pixel SPXL2, and at least one third sub-pixel SPXL3 may constitute a pixel unit configured to emit light of various colors.

[0054] In an embodiment, each of the first sub-pixel SPXL1, the second sub-pixel SPXL2, and the third sub-pixel SPXL3 may emit light of one color. In an embodiment, for example, the first sub-pixel SPXL1 may be a red pixel that emits red (e.g., first color) light, the second sub-pixel SPXL2 may be a green pixel that emits green (e.g., second color) light, and the third sub-pixel SPXL3 may be a blue pixel that emits blue (e.g., third color) light. According to an embodiment, the number of the second sub-pixels SPXL2 may be greater than the number of the first sub-pixels SPXL1 and the number of the third sub-pixels SPXL3. However, the colors, types, and / or numbers of the first sub-pixels SPXL1, the second sub-pixels SPXL2, and the third sub-pixels SPXL3 constituting each pixel unit are not limited to specific examples.

[0055] Figure 2 is a schematic cross-sectional view showing a display device according to an embodiment of the present disclosure.

[0056] refer to Figure 2 , an embodiment of the display device DD may include a pixel circuit layer PCL (eg, a backplane layer), a light emitting element layer LEL, and a cover layer COL.

[0057] The pixel circuit layer PCL may include a circuit for driving the light emitting element layer LEL (or the light emitting element LE included in the light emitting element layer LEL (see Figure 8 The pixel circuit layer PCL may include a base layer BSL, a conductive layer constituting or used to form a pixel circuit, and an insulating layer disposed on the conductive layer.

[0058] The light emitting element layer LEL may be disposed on the pixel circuit layer PCL. In some embodiments, the light emitting element layer LEL may include a light emitting element LE. In some embodiments, the light emitting element LE may include an inorganic light emitting element including an inorganic material. However, the present disclosure is not necessarily limited thereto.

[0059] In some embodiments, the light emitting element LE may have a nanometer scale to a micrometer scale. In an embodiment, for example, the light emitting element LE may be a micro light emitting diode (LED). However, the present disclosure is not limited thereto.

[0060] The cover layer COL may be disposed on the light emitting element layer LEL. The cover layer COL may allow light emitted from the light emitting element layer LEL to be transmitted therethrough. The cover layer COL may include a window. The cover layer COL may include a structure (e.g., a film or layer stacked structure) for preventing external light reflection. However, the present disclosure is not limited thereto.

[0061] An inspection process for determining whether the light emitting element LE included in the display device DD operates normally can be fully performed during the manufacturing process, so that the failure rate of the light emitting element LE can be reduced. Therefore, the process yield can be significantly improved.

[0062] In the following, reference will be made to Figure 3 The accompanying drawings describe an embodiment of a method of manufacturing a display device DD including an inspection process of the display device DD.

[0063] Figures 3 to 16 2 is a view illustrating a method of manufacturing the display device DD according to an embodiment of the present disclosure.

[0064] Figure 3 is a flowchart illustrating a method of manufacturing a display device according to an embodiment of the present disclosure. Figures 4 to 9is a schematic process view illustrating a process of providing a carrier module according to an embodiment of the present disclosure. Fig.10 and Fig.11 is a process view showing a process of disposing a carrier module on a transparent electrode assembly according to an embodiment of the present disclosure. Figures 12 to 15 is a process view showing a process of inspecting a light emitting element according to an embodiment of the present disclosure. Fig.16 and Fig.17 is a schematic diagram illustrating a process of transferring a light emitting element according to an embodiment of the present disclosure.

[0065] refer to Figure 3 According to an embodiment of the present disclosure, a method for manufacturing a display device DD may include: process S100, providing a carrier module including a carrier wafer and a light emitting element; process S200, setting the carrier module on a transparent electrode assembly; process S300, inspecting the light emitting element; process S400, repairing the light emitting element; and process S500, transferring the light emitting element.

[0066] refer to Figures 3 to 9 In the process S100 of providing a carrier module including a carrier wafer and a light emitting element, the light emitting element LE may be prepared, and when the light emitting element LE is coupled to the carrier wafer CW, the carrier module CM may be manufactured.

[0067] refer to Figure 4 In the process S100 of providing a carrier module including a carrier wafer and a light emitting element, a bonding electrode BO may be patterned on the carrier wafer CW.

[0068] The carrier wafer CW may be a moving member temporarily attached to transfer the light emitting element LE. The carrier wafer CW may include various materials. In some embodiments, the carrier wafer CW may include silicon (Si). The material of the carrier wafer CW according to the embodiment of the present disclosure is not particularly limited.

[0069] The carrier wafer CW according to an embodiment of the present disclosure may be used as a path for supplying an electrical signal to the light emitting element LE to perform an inspection process of the light emitting element LE. In an embodiment, the carrier wafer CW may have conductivity to allow an electrical signal to be supplied to the light emitting element LE therethrough.

[0070] The bonding electrode BO may be provided to couple the light emitting element LE and the carrier wafer CW to each other in a subsequent process. The bonding electrode BO may be patterned (or formed by a patterning process) in a predetermined reference shape. In an embodiment, for example, the bonding electrode BO may be provided to correspond to the positions of the respective light emitting elements LE that are respectively divided or separated from each other.

[0071] refer to Figure 5, in the process S100 of providing a carrier module including a carrier wafer and a light emitting element, a semiconductor material may be sequentially formed on a growth substrate SG, and a reflective electrode RE may be disposed thereon in a pattern shape.

[0072] The growth substrate SG may be a base plate for growing a target material. In an embodiment, for example, the growth substrate SG may be a wafer for epitaxial growth of a material. In an embodiment, the growth substrate SG is a sapphire substrate and may include aluminum oxide (AlO x ). However, the present disclosure is not limited thereto.

[0073] In this process, a first base semiconductor layer BSCL1 , a base active layer BAL, and a second base semiconductor layer BSCL2 may be sequentially formed (eg, epitaxially grown) on the growth substrate SG.

[0074] The first base semiconductor layer BSCL1 may include a semiconductor layer for forming a first semiconductor layer SCL1 (see Figure 8 The base active layer BAL may include materials for forming the active layer AL (see Figure 8 ) The second base semiconductor layer BSCL2 may include a material for forming a second semiconductor layer SCL2 (see Figure 8 ) materials.

[0075] The reflective electrode RE may be disposed to be coupled to the bonding electrode BO in a subsequent process. The reflective electrode RE may be patterned into a predetermined reference shape. In an embodiment, for example, the reflective electrode RE may be disposed to correspond to positions of respective light emitting elements LE that are respectively divided or separated from each other.

[0076] refer to Figure 6 , in the process S100 of providing a carrier module including a carrier wafer and a light emitting element, when the reflective electrode RE and the bonding electrode BO are coupled to each other, the semiconductor layers BSCL1 , BAL and BSCL2 stacked on the growth substrate SG may be coupled to the carrier wafer CW.

[0077] According to an embodiment, after the reflective electrode RE is disposed on the bonding electrode BO, the bonding electrode BO and the reflective electrode RE may be coupled to each other by applying heat between the bonding electrode BO and the reflective electrode RE (for example, by irradiating laser between the bonding electrode BO and the reflective electrode RE). However, the present disclosure is not limited thereto.

[0078] refer to Figure 7 In the process S100 of providing the carrier module including the carrier wafer and the light emitting element, the growth substrate SG may be separated.

[0079] According to an embodiment, the growth substrate SG may be physically spaced apart from the first base semiconductor layer BSCL1. In some embodiments, the growth substrate SG may be physically separated from the first base semiconductor layer BSCL1 using a laser lift-off process, etc. However, the present disclosure is not limited thereto.

[0080] refer to Figure 8 and Fig. 9 In the process S100 of providing a carrier module including a carrier wafer and a light emitting element, the semiconductor layers BSCL1, BAL, and BSCL2 may be etched, and a first semiconductor layer SCL1, an active layer AL, and a second semiconductor layer SCL2, which are respectively separated or spaced apart from each other, may be provided. In addition, the insulating layer INF may be patterned or set in a pattern shape, and light emitting elements LE each including a first semiconductor layer SCL1, an active layer AL, a second semiconductor layer SCL2, and an insulating layer INF may be provided.

[0081] The first semiconductor layer SCL1 may include a semiconductor layer having a type different from that of the second semiconductor layer SCL2. In an embodiment, for example, the first semiconductor layer SCL1 may include an N-type semiconductor. The first semiconductor layer SCL1 may include a GaN-based material. In an embodiment, for example, the first semiconductor layer SCL1 may include at least one selected from InAlGaN, GaN, AlGaN, and InGaN, and include an N-type semiconductor layer doped with a first conductive type dopant such as Si, Ge, or Sn.

[0082] The active layer AL may be disposed between the first semiconductor layer SCL1 and the second semiconductor layer SCL2. The active layer AL may include a single quantum well structure or a multi-quantum well structure.

[0083] The active layer AL may include a well layer and a barrier layer, which together define a quantum well structure. In an embodiment, for example, a portion of the active layer AL as a well layer may include InGaN. In an embodiment, for example, a portion of the active layer AL as a barrier layer may include GaN.

[0084] The second semiconductor layer SCL2 may include a semiconductor layer having a type different from that of the first semiconductor layer SCL1. In an embodiment, for example, the second semiconductor layer SCL2 may include a P-type semiconductor. The second semiconductor layer SCL2 may include a GaN-based material. In an embodiment, for example, the second semiconductor layer SCL2 may include at least one selected from InAlGaN, GaN, AlGaN, and InGaN, and includes a P-type semiconductor layer doped with a second conductive type dopant such as Ge, B, or Mg.

[0085] The insulating layer INF may be formed (or deposited) by various methods. In an embodiment, for example, the insulating layer INF may be formed using an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, etc. However, the present disclosure is not necessarily limited thereto. When the formed insulating layer INF is etched, at least a portion of the second semiconductor layer SCL2 may be electrically exposed.

[0086] According to an embodiment, the light emitting elements LE may be disposed on the carrier wafer CW to be spaced apart from each other when viewed on a plane.

[0087] According to an embodiment, positions where the light emitting elements LE are arranged may correspond to the electrodes E (see Fig.10 ) in the transparent electrode assembly TEA (see Fig.10 ) where they intersect each other.

[0088] For example, when viewed on a plane, the light emitting elements LE may be arranged in a matrix structure defined relative to a first arrangement direction and a second arrangement direction. In some embodiments, the light emitting elements LE may be sequentially disposed along the first arrangement direction and sequentially disposed along a second arrangement direction different from the first arrangement direction.

[0089] Therefore, a carrier module CM including the light emitting element LE and the carrier wafer CW may be provided. However, the process steps for manufacturing the carrier module CM are not necessarily limited to the examples described above.

[0090] refer to Fig.10 and Fig.11 In the process S200 of placing the carrier module on the transparent electrode assembly, the manufactured carrier module CM may be placed on the transparent electrode assembly TEA so that positions of the light emitting elements LE correspond to (or overlap) positions where the electrodes E intersect with each other.

[0091] According to an embodiment, a transparent electrode assembly TEA may be provided for an inspection process of the light emitting element LE The transparent electrode assembly TEA may form a region in which the carrier module CM is disposed.

[0092] The transparent electrode assembly TEA may include a glass substrate GS and an electrode E. The electrode E may be disposed on the glass substrate GS. In an implementation, for example, the electrode E may be directly disposed on the glass substrate GS.

[0093] The glass substrate GS may form a base on which the electrodes E are disposed. The glass substrate GS may include a material that allows light to be transmitted therethrough. The glass substrate GS may include a glass material.

[0094] The electrode E may include a first electrode E1 and a second electrode E2. The first electrode E1 and the second electrode E2 may be integrally formed with each other as a single, integral and inseparable part.

[0095] The electrode E may be conductive and include a transparent electrode material. The transparent electrode material may include a material selected from silver nanowires (AgNW), indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), antimony zinc oxide (AZO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), tin oxide (SnO 2 ), at least one of carbon nanotubes and graphene.

[0096] The electrode E may be electrically connected to the pad PD. The pad PD may correspond to a conductive structure for supplying an electrical signal to the electrode E to allow the light emitting element LE to emit light. In an embodiment, for example, the pad PD may include a first pad PD1 and a second pad PD2. The first electrode E1 may be electrically connected to the first pad PD1. The second electrode E2 may be electrically connected to the second pad PD2. In some embodiments, the pad PD may be disposed in an edge region of the glass substrate GS.

[0097] The first electrode E1 and the second electrode E2 may extend in different directions, respectively. In an embodiment, for example, the first electrode E1 may extend in the first extension direction ER1. The first electrode E1 may be sequentially arranged in the second extension direction ER2. The second electrode E2 may extend in the second extension direction ER2. The second electrode E2 may be sequentially arranged in the first extension direction ER1.

[0098] In this process, the carrier module CM may be attached to the transparent electrode assembly TEA, and thus, the transparent electrode assembly TEA may be electrically connected to at least a portion of the carrier module CM.

[0099] In some embodiments, the transparent electrode assembly TEA may be electrically connected to the carrier wafer CW. In an embodiment, for example, the transparent electrode assembly TEA may be electrically connected to the second semiconductor layer SCL2 of the light emitting element LE. In some embodiments, the light emitting elements LE may be electrically connected to the electrodes E in the crossing regions CRA, respectively.

[0100] The first electrode E1 and the second electrode E2 may intersect each other while extending in different directions. In an embodiment, for example, the first electrode E1 and the second electrode E2 may intersect each other in a cross region CRA. The cross region CRA may be defined at a plurality of locations. In an embodiment, for example, the cross region CRA may be arranged in a matrix structure. In some embodiments, the cross region CRA may be an electrode node. The cross region CRA may be arranged in a matrix form, wherein the row direction is the first extension direction ER1, and the column direction is the second extension direction ER2.

[0101] In some embodiments, the structure in which the cross region CRA is arranged may correspond to the structure in which the light emitting element LE is to be arranged. In an embodiment, for example, the structure (or arrangement) in which the cross region CRA is arranged may be substantially the same as the structure in which the light emitting element LE is to be arranged. Therefore, the transparent electrode assembly TEA and the carrier module CM are coupled to each other so that the light emitting elements LE may be respectively in the cross region CRA. In an embodiment, the light emitting elements LE may be arranged in a matrix form, wherein the row direction is the first extension direction ER1, and the column direction is the second extension direction ER2.

[0102] refer to Figure 3 and Figures 12 to 15 In the process S300 of inspecting the light emitting element, an inspection process may be performed on the light emitting element LE disposed on the transparent electrode assembly TEA.

[0103] In the process S300 of inspecting the light emitting element, it can be inspected whether the light emitting element LE can emit light normally. In an embodiment, for example, an electrical signal for allowing the light emitting element LE to emit light can be applied to the light emitting element LE to inspect the light emitting element LE, and visual information for determining whether the light emitting element LE operates normally can be obtained.

[0104] According to an embodiment, a manufacturing apparatus (or inspection apparatus) for performing a method of manufacturing a display device DD may include a power supply unit POW and a power applying unit PS. According to an embodiment, a manufacturing apparatus (or inspection apparatus) for performing a method of manufacturing a display device DD may include a visual inspection apparatus CAM.

[0105] According to an embodiment, the power supply unit POW may supply power to the power applying unit PS. The power applying unit PS may supply an electrical signal to opposite end portions of the light emitting element LE, and the light emitting element LE may emit light.

[0106] In an embodiment, for example, the power applying unit PS may be electrically connected to the pad PD through the power supply pin PN. The power applying unit PS may supply a first electrical signal (e.g., a positive voltage or an anode signal) for allowing the light emitting element LE to emit light to the electrode E through the power supply pin PN and the pad PD. Thus, the first electrical signal for performing the inspection process may be supplied to the light emitting element LE.

[0107] The power supply unit POW may supply a second electrical signal (e.g., a negative voltage or a cathode signal) for allowing the light emitting element LE to emit light. In an embodiment, for example, the power supply unit POW may be electrically connected to the carrier wafer CW, and the carrier wafer CW may be electrically connected to the first semiconductor layer SCL1 through the bonding electrode BO and the reflective electrode RE. Therefore, the second electrical signal for performing the inspection process may be supplied to the light emitting element LE.

[0108] In this process, the electric signal applied by the power applying unit PS may be applied to the first and second electrodes E1 and E2 arranged in a matrix structure. Thus, an electric signal for performing the inspection process may be supplied to each of the light emitting elements LE.

[0109] In this process, at least some of the light emitting elements LE may emit light. In some embodiments, the light emitting elements LE configured to operate normally may emit light normally. When some of the light emitting elements LE have an abnormal state, some of the light emitting elements LE may not emit light.

[0110] In this process, the visual inspection device CAM may acquire visual information about whether the light emitting element LE emits light. In an embodiment, for example, the visual inspection device CAM may include a camera, etc. However, the present disclosure is not limited thereto.

[0111] In some embodiments, the visual information acquired by the visual inspection apparatus CAM may include mapping information of the light emitting element LE and information on whether light is emitted for each position.

[0112] Since the positions where the light emitting elements LE are disposed are defined to correspond to the intersection areas CRA of the transparent electrode assembly TEA described above, respectively, the mapping information indicating the positions where the light emitting elements LE are disposed can be predetermined based on the matrix form defined by the intersection area CRA. When performing the process, it can be recognized based on the mapping information and the acquired visual information that the light emitting elements LE emit light at a specific position, and it can be recognized that the light emitting elements LE at other positions do not emit light.

[0113] In an embodiment, for example, since the intersection area CRA may be arranged in a matrix form, the position information of the normally emitting light emitting element LE(N) (e.g., a normal light emitting element) may be determined as n rows and m columns (n ​​and m are integers of 1 or more). In addition, the position information of the abnormally emitting light emitting element LE(ABN) may be determined as x rows and y columns (x and y are integers of 1 or more).

[0114] In some embodiments, it may be determined separately whether the light emitting element LE operates normally. In some embodiments, it may be determined whether the light emitting element LE operates normally relative to an area where the ratio of abnormal operation of the light emitting element LE is relatively high. In an embodiment, for example, an area in which the light emitting element LE is arranged may include an abnormal area. The abnormal area may be an area in which the light emitting element LE does not emit light at a predetermined ratio or higher. In some embodiments, the predetermined ratio may be 80%, etc., but the present disclosure is not limited thereto.

[0115] According to an embodiment, an inspection process may be performed before the light emitting element LE is transferred onto the pixel circuit layer PCL. Experimentally, when the inspection process is performed after the light emitting element LE is transferred, the process difficulty level may be too high. For example, when the inspection process is performed after the light emitting element LE is transferred, pins for supplying electrical signals may be respectively provided at one end portion of the light emitting element LE. The pins are in electrical contact with the end portions of the corresponding light emitting elements LE, but any pin may not be in contact with the end portions of some light emitting elements LE. In addition, it may be difficult to properly perform a repair process of a light emitting element LE having an abnormal state, and therefore, the process cost may be increased.

[0116] According to the embodiment, when the transparent electrode assembly TEA is provided, the inspection process can be performed before the light emitting element LE is transferred to the pixel circuit layer PCL. Therefore, the repair process can be further optimized to perform, and the process facilities are simplified, so that the reliability of the process can be improved.

[0117] refer to Figure 3 and Fig.16 In the process S400 of repairing the light emitting elements, at least some of the light emitting elements LE(ABN) (e.g., abnormal light emitting elements) determined (or identified) as not operating normally can be repaired. Therefore, the light emitting elements LE(ABN) operating abnormally (e.g., determined to be abnormal light emitting elements, or not operating normally) can be repaired to light emitting elements LE(REPAIR) that can operate normally.

[0118] In this process, a repair process may be performed on the light emitting element LE. The repair process may be performed before the light emitting element LE is transferred onto the pixel circuit layer PCL, thereby reducing process costs.

[0119] In some embodiments, some light emitting elements LE (ABN) determined to be abnormally operated in a previous process may be removed and replaced with new light emitting elements LE. Thus, repair light emitting elements LE (REPAIR) may be provided.

[0120] In some embodiments, a process of removing an abnormally operated light emitting element LE (ABN) and providing a repair light emitting element LE (REPAIR) may be performed for each of the light emitting elements LE. For example, an abnormal light emitting element LE (ABN) in the light emitting elements LE may be repaired individually. However, the present disclosure is not limited thereto. In some embodiments, a process of removing an abnormally operated light emitting element LE (ABN) and providing a repair light emitting element LE (REPAIR) may be performed for an area in which the light emitting elements LE are arranged. For example, an abnormal light emitting element LE (ABN) in the light emitting elements LE may be repaired for an area including abnormal light emitting elements LE (ABN) at a predetermined ratio or higher.

[0121] refer to Figure 3 and Fig.17 In the process S500 of transferring the light emitting element, the light emitting element LE may be transferred to the pixel circuit layer PCL.

[0122] In this process, the carrier module CM may be separated from the transparent electrode assembly TEA. Various methods may be used as a method of separating the carrier module CM from the transparent electrode assembly TEA. In an embodiment, for example, a laser lift-off process or the like may be used to separate the carrier module CM from the transparent electrode assembly TEA, but the present disclosure is not limited thereto.

[0123] In this process, when the carrier wafer CW moves, the light emitting element LE may be disposed on the pixel circuit layer PCL. In some embodiments, a separate electrode may be disposed on the pixel circuit layer PCL, and the light emitting element LE may be arranged on the electrode. Afterwards, although not shown in a separate drawing, the carrier wafer CW may be removed. Thus, the light emitting element LE may be electrically connected to the pixel circuit included in the pixel circuit layer PCL to emit light.

[0124] Thereafter, an upper member such as a window may be provided on the light emitting element LE, and the display device DD according to the embodiment of the present disclosure may be provided.

[0125] According to the embodiments of the present disclosure, a method of manufacturing a display device and a display device in which a failure rate of a light emitting element is reduced and process efficiency can be improved can be provided.

[0126] According to the embodiments of the present disclosure, a method of manufacturing a display device and a display device that can appropriately perform an inspection process for a light emitting element can be provided.

[0127] The present invention should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the inventive concept to those skilled in the art.

[0128] While the invention has been particularly shown and described with reference to embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit or scope of the invention as defined by the appended claims.

Claims

1. A method for manufacturing a display device, the method comprising: providing a carrier module including a carrier wafer and a light emitting element; placing the carrier module on a transparent electrode assembly; inspecting the light emitting element; as well as After the light emitting element is inspected, the light emitting element is transferred to a pixel circuit layer.

2. The method according to claim 1, wherein: Providing the carrier module comprises: growing a semiconductor layer on a growth substrate; providing the light emitting elements by etching the semiconductor layer, wherein the light emitting elements are spaced apart from each other and each of the light emitting elements includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; coupling the light emitting element and the carrier wafer to each other; and The light emitting element and the growth substrate are separated from each other.

3. The method according to claim 1, wherein: The carrier wafer comprises silicon, and Wherein, the carrier wafer is conductive.

4. The method according to claim 2, wherein: Providing the carrier module also includes: providing bonding electrodes in a pattern shape on the carrier wafer; and A reflective electrode is provided in a pattern shape on the semiconductor layer.

5. The method according to claim 1, wherein: The transparent electrode assembly includes a glass substrate and an electrode disposed on the glass substrate, and Wherein, the electrode comprises: A first electrode extending in a first extension direction; and a second electrode extending in a second extension direction different from the first extension direction, wherein the second electrode is integrally formed with the first electrode as a single integral and inseparable part, wherein the first electrode and the second electrode intersect each other in a crossing region, and The intersection areas are arranged in a matrix form, wherein the row direction is the first extension direction and the column direction is the second extension direction.

6. The method according to claim 5, wherein: The glass substrate includes a glass material, and The electrode includes a transparent electrode material.

7. The method according to claim 5, wherein: inspecting the light emitting element includes supplying power to the electrode so that the power is supplied to the light emitting element, and The supplying of the power to the electrode includes: supplying the power to a pad connected to the electrode via a power supply pin by a power applying unit.

8. The method according to claim 5, wherein: Checking the light emitting element comprises: applying an electrical signal to the light emitting element for allowing the light emitting element to emit light, Wherein, inspecting the light emitting element further comprises: acquiring visual information related to the light emitting element, and The visual information includes mapping information of the light-emitting elements on the transparent electrode assembly and information on whether the light-emitting elements emit light for each of the positions where the light-emitting elements are disposed.

9. The method according to claim 8, wherein: The mapping information is predetermined based on the matrix form defined by the intersection area.

10. The method according to claim 8, further comprising: repairing at least one of the light emitting elements, wherein the repair is performed after the light emitting element is inspected, and the repair is performed before the light emitting element is transferred to the pixel circuit layer, Wherein, inspecting the light emitting element further comprises: determining the at least one of the light-emitting elements as an abnormal light-emitting element that emits abnormal light; and Determine the other light-emitting elements among the light-emitting elements as normal light-emitting elements that emit light normally, Wherein, repairing the at least one of the light-emitting elements comprises: individually repairing the at least one of the light-emitting elements that is determined to be the abnormal light-emitting element.

11. The method according to claim 8, further comprising: repairing at least one of the light emitting elements, Wherein, inspecting the light emitting element further comprises: determining the at least one of the light-emitting elements as an abnormal light-emitting element that emits abnormal light; and Determine the other light-emitting elements among the light-emitting elements as normal light-emitting elements that emit light normally, The repairing includes: repairing the at least one light emitting element determined to be the abnormal light emitting element among the light emitting elements for a region including the abnormal light emitting elements at a predetermined ratio or higher.

12. The method according to claim 1, wherein: Transferring the light emitting element to the pixel circuit layer includes removing the carrier wafer in the carrier module and placing the light emitting element on the pixel circuit layer.

13. A display device manufactured by the method according to claim 1.

14. The display device according to claim 13, wherein: The pixel circuit layer includes a pixel circuit, and the light emitting element is electrically connected to the pixel circuit.

15. The display device according to claim 14, wherein: Each of the light emitting elements is a micro light emitting diode.

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