Light emitting diode and manufacturing method of light emitting diode

Abstract

The invention provides a light-emitting diode and a manufacturing method of the light-emitting diode, and belongs to the field of light-emitting devices. The light-emitting diode comprises a light-emitting diode chip and a normal antireflection film located on the light-emitting surface of the light-emitting diode chip, the normal antireflection film comprises first film layers and second film layers which are alternately stacked, the first film layers are silicon oxide film layers, the second film layers are titanium oxide film layers, and the total number of the first film layers and the second film layers is larger than or equal to 16 and smaller than or equal to 19. By arranging the normal antireflection film, more light rays can be emitted from the normal direction, and the normal light emitting intensity is enhanced.

Description

Technical Field

[0001] The present disclosure relates to the field of light-emitting devices, and in particular to a light-emitting diode and a method for manufacturing the light-emitting diode. Background Art

[0002] Light-emitting diodes are semiconductor light-emitting devices that can be used in display, lighting and other display fields.

[0003] Due to the existence of refraction and reflection in the LED chip, the light emitting angle of most LED chips is between 110° and 150°.

[0004] With the development of science and technology, some products have requirements on the light-emitting angle of light-emitting diodes, requiring that the light-emitting angle be as small as possible and the normal light intensity perpendicular to the light-emitting surface direction be as high as possible, but the light-emitting diode structure in the related technology cannot meet this requirement. Summary of the invention

[0005] The embodiments of the present disclosure provide a light emitting diode and a method for manufacturing the light emitting diode, which can improve the normal light intensity. The technical solution is as follows:

[0006] In one aspect, a light emitting diode is provided, the light emitting diode comprising:

[0007] A light emitting diode chip and a normal anti-reflection film located on the light emitting surface of the light emitting diode chip;

[0008] The normal anti-reflection film includes a first film layer and a second film layer that are alternately stacked, the first film layer is a silicon oxide film layer, the second film layer is a titanium oxide film layer, and the total number of layers of the first film layer and the second film layer is greater than or equal to 16 and less than or equal to 19.

[0009] Exemplarily, the first film layer is a silicon dioxide film layer, and the second film layer is a titanium dioxide film layer.

[0010] Exemplarily, the total number of layers of the first film layer and the second film layer is 19.

[0011] Exemplarily, the first layer and the last layer of the normal anti-reflection film are both the first film layer.

[0012] Exemplarily, the thickness ranges of the 19 film layers of the normal antireflection film are respectively:

[0013] 0.890×10 3 ~0.900×10 3 Angstrom, 1.230×10 3 ~1.240×10 3 Angstrom, 0.810×10 3~0.820×10 3 Angstrom, 1.140×10 3 ~1.150×10 3 Angstrom, 0.760×10 3 ~0.770×10 3 Angstrom, 1.210×10 3 ~1.220×10 3 Angstrom, 0.700×10 3 ~0.710×10 3 Angstrom, 1.230×10 3 ~1.240×10 3 Angstrom, 0.750×10 3 ~0.760×10 3 Angstrom, 1.130×10 3 ~1.140×10 3 Angstrom, 0.800×10 3 ~0.810×10 3 Angstrom, 1.220×10 3 ~1.230×10 3 Angstrom, 1.070×10 3 ~1.080×10 3 Angstrom, 0.220×10 3 ~0.230×10 3 Angstrom, 3.140×10 3 ~3.150×10 3 Angstrom, 0.760×10 3 ~0.770×10 3 Angstrom.

[0014] Exemplarily, the thicknesses of the 19 film layers of the normal antireflection film are respectively:

[0015] 0.894×10 3 Angstrom, 1.237×10 3 Angstrom, 0.816×10 3 Angstrom, 1.140×10 3 Angstrom, 0.769×10 3 Angstrom, 1.216×10 3 Angstrom, 0.709×10 3 Angstrom, 1.233×10 3 Angstrom, 0.752×10 3 Angstrom, 1.136×10 3 Angstrom, 0.809×10 3 Angstrom, 1.223×10 3 Angstrom, 1.074×10 3 Angstrom, 0.220×103 Angstrom, 3.142×10 3 Angstrom, 0.767×10 3 Angstrom.

[0016] In another aspect, a method for manufacturing a light emitting diode is provided, the method comprising:

[0017] Making light-emitting diode chips;

[0018] A normal anti-reflection film is manufactured on the light-emitting surface of the light-emitting diode chip, wherein the normal anti-reflection film comprises a first film layer and a second film layer which are alternately stacked, wherein the first film layer is a silicon oxide film layer, and the second film layer is a titanium oxide film layer, and the total number of layers of the first film layer and the second film layer is greater than or equal to 16 and less than or equal to 19.

[0019] Exemplarily, the total number of layers of the first film layer and the second film layer is 19.

[0020] Exemplarily, forming a normal antireflection film on the light-emitting surface of the light-emitting diode chip includes:

[0021] The first film layer is deposited at a deposition rate of 3 to 6 angstroms per second, and the second film layer is deposited at a deposition rate of 1 to 2 angstroms per second.

[0022] Exemplarily, the step of depositing the first film layer at a deposition rate of 3 to 6 angstroms per second and depositing the second film layer at a deposition rate of 1 to 2 angstroms per second comprises:

[0023] The deposition rate is 3 angstroms / second and the thickness is less than 0.800×10 3 The first film layer is deposited at a deposition rate of 6 angstroms / second to a thickness of not less than 0.800×10 3 The first film layer is deposited at angstroms, and the second film layer is deposited at a deposition rate of 1.5 angstroms / second.

[0024] The technical solution provided by the embodiments of the present disclosure has the following beneficial effects:

[0025] In the light-emitting diode provided in the embodiment of the present disclosure, a normal anti-reflection film is covered on the light-emitting surface of the light-emitting diode chip, wherein the normal anti-reflection film is composed of alternately stacked silicon oxide film layers and titanium oxide film layers, and the total number of layers is limited to 16 to 19 layers. The above structure can transmit small-angle (small angle with the normal) incident light and reflect large-angle (large angle with the normal) incident light, and the reflected light is finally continuously reflected inside the chip until it is emitted at a low angle. Therefore, by providing a normal anti-reflection film, more light can be emitted from the normal direction, thereby enhancing the normal light output intensity. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0027] Figure 1 is a structural schematic diagram of a light emitting diode provided by an embodiment of the present disclosure;

[0028] Figure 2 is a thickness variation curve of each film layer in the normal antireflection film shown in Table 1;

[0029] Figure 3 is a structural schematic diagram of a light-emitting diode chip provided by an embodiment of the present disclosure;

[0030] Figure 4 is a flow chart of a method for manufacturing a light emitting diode provided by an embodiment of the present disclosure;

[0031] Figure 5 This is a flow chart of another method for manufacturing a light emitting diode provided in an embodiment of the present disclosure.

[0032] The reference numerals are as follows:

[0033] 10: light-emitting diode chip; 20: normal antireflection film; 100: substrate; 200: reflection layer; 300: epitaxial structure; 400: first electrode; 500: second electrode; 600: passivation layer. DETAILED DESCRIPTION

[0034] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0035] Figure 1 is a schematic diagram of the structure of a light emitting diode provided by an embodiment of the present disclosure. Figure 1 The light emitting diode comprises: a light emitting diode chip 10 and a normal anti-reflection film 20. The normal anti-reflection film 20 is located on the light emitting surface of the light emitting diode chip 10.

[0036] The normal antireflection film 20 includes a first film layer and a second film layer alternately stacked, the first film layer is a silicon oxide film layer, the second film layer is a titanium oxide film layer, and the total number of layers of the first film layer and the second film layer is greater than or equal to 16 and less than or equal to 19.

[0037] The normal direction refers to the direction perpendicular to the light emitting surface of the LED chip 10, that is, Figure 1 The direction of the middle ray A.

[0038] In the light-emitting diode provided in the embodiment of the present disclosure, a normal anti-reflection film is covered on the light-emitting surface of the light-emitting diode chip, wherein the normal anti-reflection film is composed of alternately stacked silicon oxide film layers and titanium oxide film layers, and the total number of layers is limited to 16 to 19 layers. The above structure can transmit small-angle (small angle with the normal) incident light and reflect large-angle (large angle with the normal) incident light, and the reflected light is finally continuously reflected inside the chip until it is emitted at a low angle. Therefore, by providing a normal anti-reflection film, more light can be emitted from the normal direction, thereby enhancing the normal light output intensity.

[0039] In the embodiment of the present disclosure, the first film layer is a silicon dioxide (SiO2) film layer, and the second film layer is a titanium dioxide (TiO2) film layer.

[0040] In this implementation, a silicon dioxide film layer and a titanium dioxide film layer are used to form a normal anti-reflection film, so that the normal anti-reflection film can have a good transmission effect on small-angle incident light and a good reflection effect on large-angle incident light.

[0041] In the embodiment of the present disclosure, the total number of layers of the first film layer and the second film layer is 19.

[0042] In this implementation, 19 layers of first film layers and second film layers are used to form a normal anti-reflection film, so that the normal anti-reflection film can have a good transmission effect on small-angle incident light and a good reflection effect on large-angle incident light.

[0043] In an example, the first layer and the last layer of the normal anti-reflection film 20 are both the first film layer.

[0044] That is, the stacking order of the normal antireflection film 20 is SiO2 / TiO2 / SiO2 / TiO2 / SiO2 / TiO2 / ...TiO2 / SiO2.

[0045] In this implementation, using SiO2 as the starting film layer and the ending film layer can ensure better integration of the normal anti-reflection film with the light-emitting diode chip and the packaging structure on the one hand, and can ensure the normal anti-reflection effect on the other hand.

[0046] In other implementations, the first layer and the last layer of the normal anti-reflection film 20 may also be the second film layer.

[0047] The following description is made by taking the example that the first layer and the last layer of the normal anti-reflection film 20 are both the first film layer:

[0048] In the disclosed embodiment, the thickness ranges of the 19 film layers of the normal antireflection film 20 are respectively:

[0049] 0.890×10 3~0.900×10 3 Angstrom, 1.230×10 3 ~1.240×10 3 Angstrom, 0.810×10 3 ~0.820×10 3 Angstrom, 1.140×10 3 ~1.150×10 3 Angstrom, 0.760×10 3 ~0.770×10 3 Angstrom, 1.210×10 3 ~1.220×10 3 Angstrom, 0.700×10 3 ~0.710×10 3 Angstrom, 1.230×10 3 ~1.240×10 3 Angstrom, 0.750×10 3 ~0.760×10 3 Angstrom, 1.130×10 3 ~1.140×10 3 Angstrom, 0.800×10 3 ~0.810×10 3 Angstrom, 1.220×10 3 ~1.230×10 3 Angstrom, 1.070×10 3 ~1.080×10 3 Angstrom, 0.220×10 3 ~0.230×10 3 Angstrom, 3.140×10 3 ~3.150×10 3 Angstrom, 0.760×10 3 ~0.770×10 3 Angstrom.

[0050] In this implementation, each film layer is designed within the above thickness range, so that the normal anti-reflection film can achieve a better normal anti-reflection effect.

[0051] Exemplarily, the thicknesses of the 19 film layers of the normal antireflection film 20 are shown in Table 1 below:

[0052] Table 1

[0053] Number of layers Film Thickness / kAngstrom 1 <![CDATA[SiO2]]> 0.752 2 <![CDATA[TiO2]]> 0.724 3 <![CDATA[SiO2]]> 1.190 4 <![CDATA[TiO2]]> 0.701 5 <![CDATA[SiO2]]> 1.107 6 <![CDATA[TiO2]]> 0.669 7 <![CDATA[SiO2]]> 1.233 8 <![CDATA[TiO2]]> 0.556 9 <![CDATA[SiO2]]> 1.239 10 <![CDATA[TiO2]]> 0.688 11 <![CDATA[SiO2]]> 1.150 12 <![CDATA[TiO2]]> 0.752 13 <![CDATA[SiO2]]> 1.663 14 <![CDATA[TiO2]]> 1.083 15 <![CDATA[SiO2]]> 0.655 16 <![CDATA[TiO2]]> 0.960 17 <![CDATA[SiO2]]> 0.965 18 <![CDATA[TiO2]]> 0.907 19 <![CDATA[SiO2]]> 2.688

[0054] That is, the thicknesses of the 19 film layers of the normal antireflection film 20 are respectively:

[0055] 0.894×10 3 Angstrom, 1.237×103 Angstrom, 0.816×10 3 Angstrom, 1.140×10 3 Angstrom, 0.769×10 3 Angstrom, 1.216×10 3 Angstrom, 0.709×10 3 Angstrom, 1.233×10 3 Angstrom, 0.752×10 3 Angstrom, 1.136×10 3 Angstrom, 0.809×10 3 Angstrom, 1.223×10 3 Angstrom, 1.074×10 3 Angstrom, 0.220×10 3 Angstrom, 3.142×10 3 Angstrom, 0.767×10 3 Angstrom.

[0056] In this implementation, by using 19 film layers and the above-mentioned thicknesses of each film layer, a normal anti-reflection film with better effect can be obtained.

[0057] The effect of the solution shown in Table 1 is illustrated below by taking a 16-layer normal anti-reflection film solution shown in Table 2 as a comparative example.

[0058] Table 2

[0059] Number of layers Film Thickness / kAngstrom 1 <![CDATA[TiO2]]> 0.894 2 <![CDATA[SiO2]]> 1.237 3 <![CDATA[TiO2]]> 0.816 4 <![CDATA[SiO2]]> 1.140 5 <![CDATA[TiO2]]> 0.769 6 <![CDATA[SiO2]]> 1.216 7 <![CDATA[TiO2]]> 0.709 8 <![CDATA[SiO2]]> 1.233 9 <![CDATA[TiO2]]> 0.752 10 <![CDATA[SiO2]]> 1.136 11 <![CDATA[TiO2]]> 0.809 12 <![CDATA[SiO2]]> 1.223 13 <![CDATA[TiO2]]> 1.074 14 <![CDATA[SiO2]]> 0.220 15 <![CDATA[TiO2]]> 3.142 16 <![CDATA[SiO2]]> 0.767

[0060] Figure 2 This is a graph showing the thickness variation of each layer in the normal antireflection film shown in Table 1 and Table 2. Figure 2 , S2 corresponds to Table 1, S1 corresponds to Table 2. It can be seen that the thickness of the 14th layer in the normal antireflection film in Table 2 is very thin; the thickness of each film layer in the normal antireflection film in Table 1 varies greatly. Due to the large difference in the thickness of the above layers, with the setting of 19 layers, the overall design scheme is obtained after a long period of testing and verification, and the normal enhancement effect is good.

[0061] The normal anti-reflection film provided in Table 1 has a good transmittance for normal light (incident angle 10 degrees) when the peak wavelength is 520-525nm (green light emitting diode chip) through the interference mechanism between film layers, and the transmittance decreases rapidly with the increase of wavelength. Because there are incident light rays at different angles inside the light emitting diode chip, the increase of the incident angle can be approximated as the increase of the wavelength. Therefore, as the incident angle increases, its transmittance decreases rapidly, and it will be reflected layer by layer inside the light emitting diode chip until the light is transmitted at a low angle.

[0062] Light emitting diodes were made using the normal antireflection films in Table 1 and Table 2, and then the light emitting diodes formed were optically tested. The light emitting angle of the light emitting diode made using the normal antireflection film in Table 1 is only 60 to 70 degrees, while the light emitting angle of the light emitting diode made using the normal antireflection film in Table 2 is 85 to 95 degrees. It can be seen that the light emitting diode made using the normal antireflection film in Table 1 can greatly reduce the light emitting angle and enhance the normal light intensity.

[0063] Table 3 is a graph showing the optical test results of a light emitting diode made with the normal anti-reflection film in Table 1. The graph is a graph showing the optical test results of a light emitting diode made with the normal anti-reflection film in Table 2. Referring to Tables 3 and 4, the normal anti-reflection film in Table 1 can increase the intensity of light emitted in the normal direction at various wavelengths by reflecting light at large angles, thereby improving the light output brightness of the light emitting diode.

[0064] Table 3

[0065]

[0066]

[0067] Table 4

[0068]

[0069]

[0070] The light emitting diode chip provided in the embodiment of the present disclosure may be a light emitting diode chip of a face-up, flip-down, vertical, etc. The structure of the light emitting diode chip is exemplarily described below.

[0071] Figure 3 is a schematic diagram of the structure of a light emitting diode chip provided by an embodiment of the present disclosure. Figure 3 The light emitting diode chip includes: a substrate 100 , a reflective layer 200 , an epitaxial structure 300 , a first electrode 400 , a second electrode 500 and a passivation layer 600 .

[0072] like Figure 3 As shown, the reflective layer 200 and the epitaxial structure 300 are sequentially stacked on the substrate 100, the epitaxial structure 300 has a step, and the first electrode 400 and the second electrode 500 are respectively arranged on the bottom and top of the step. The passivation layer 600 covers the step and exposes the first electrode 400 and the second electrode 500.

[0073] exist Figure 3 On the basis of the light-emitting diode chip shown, the normal anti-reflection film provided in the embodiment of the present disclosure covers the passivation layer 600 and is provided with a through hole exposing the first electrode 400 and the second electrode 500 .

[0074] In the embodiment of the present disclosure, the epitaxial structure may include a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked.

[0075] Optionally, the epitaxial structure may further include a stress release layer.

[0076] Optionally, the light emitting diode chip may further include a current blocking layer and a current spreading layer located on the top surface of the step.

[0077] Exemplarily, the substrate is a sapphire substrate.

[0078] Exemplarily, the reflective layer may be a distributed Bragg reflector (DBR).

[0079] Exemplarily, the first semiconductor layer may be an N-type semiconductor layer, the active layer may be a multi-quantum well layer, and the second semiconductor layer may be a P-type semiconductor layer.

[0080] Exemplarily, the first semiconductor layer is an N-type GaN layer, the active layer is an InGaN / GaN layer, and the second semiconductor layer is a P-type GaN layer.

[0081] In another example, the first semiconductor layer may be a P-type semiconductor layer, the active layer may be a multi-quantum well layer, and the second semiconductor layer may be an N-type semiconductor layer.

[0082] Exemplarily, the first electrode and the second electrode may be metal electrodes, metal alloy electrodes, or stacked electrodes consisting of a metal layer and a metal alloy layer.

[0083] By way of example, the passivation layer may be a silicon oxide layer or a silicon nitride layer.

[0084] Figure 4 A flowchart of a method for manufacturing a light emitting diode provided by an embodiment of the present disclosure. Figure 4 The method steps include:

[0085] S11. Making light emitting diode chips.

[0086] S12. A normal anti-reflection film is fabricated on the light-emitting surface of the light-emitting diode chip, wherein the normal anti-reflection film comprises a first film layer and a second film layer which are alternately stacked, wherein the first film layer is a silicon oxide film layer, and the second film layer is a titanium oxide film layer, and the total number of layers of the first film layer and the second film layer is greater than or equal to 16 and less than or equal to 19.

[0087] In the light-emitting diode provided in the embodiment of the present disclosure, a normal anti-reflection film is covered on the light-emitting surface of the light-emitting diode chip, wherein the normal anti-reflection film is composed of alternately stacked silicon oxide film layers and titanium oxide film layers, and the total number of layers is limited to 16 to 19 layers. The above structure can transmit small-angle (small angle with the normal) incident light and reflect large-angle (large angle with the normal) incident light, and the reflected light is finally continuously reflected inside the chip until it is emitted at a low angle. Therefore, by providing a normal anti-reflection film, more light can be emitted from the normal direction, thereby enhancing the normal light output intensity.

[0088] Figure 5 This is a flow chart of another method for manufacturing a light emitting diode provided in an embodiment of the present disclosure. Figure 5 The method steps include:

[0089] S21. Making light emitting diode chips.

[0090] Exemplarily, manufacturing a light emitting diode chip may include:

[0091] Cleaning the substrate;

[0092] forming a reflective layer on a substrate;

[0093] fabricating an epitaxial structure on the reflective layer;

[0094] The epitaxial structure is patterned to obtain steps;

[0095] Manufacturing a first electrode and a second electrode, wherein the first electrode and the second electrode are respectively arranged on the bottom surface of the step and the top surface of the step;

[0096] A passivation layer is formed, wherein the passivation layer covers the step and exposes the first electrode and the second electrode.

[0097] In the embodiment of the present disclosure, the epitaxial structure may include a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked.

[0098] Optionally, the epitaxial structure may further include a stress release layer.

[0099] Optionally, the light emitting diode chip may further include a current blocking layer and a current spreading layer located on the top surface of the step.

[0100] Exemplarily, the substrate is a sapphire substrate.

[0101] Exemplarily, the reflective layer may be a DBR.

[0102] Exemplarily, the first semiconductor layer may be an N-type semiconductor layer, the active layer may be a multi-quantum well layer, and the second semiconductor layer may be a P-type semiconductor layer.

[0103] Exemplarily, the first semiconductor layer is an N-type GaN layer, the active layer is an InGaN / GaN layer, and the second semiconductor layer is a P-type GaN layer.

[0104] In another example, the first semiconductor layer may be a P-type semiconductor layer, the active layer may be a multi-quantum well layer, and the second semiconductor layer may be an N-type semiconductor layer.

[0105] Exemplarily, the first electrode and the second electrode may be metal electrodes, metal alloy electrodes, or stacked electrodes consisting of a metal layer and a metal alloy layer.

[0106] By way of example, the passivation layer may be a silicon oxide layer or a silicon nitride layer.

[0107] In the embodiment of the present disclosure, the process of manufacturing the epitaxial structure may include:

[0108] The first step is to grow the first semiconductor layer.

[0109] Wherein, the first semiconductor layer is an N-type GaN layer.

[0110] For example, a Metal Organic Chemical Vapor Deposition (MOCVD) device is used to grow an N-type GaN layer on the surface of a substrate.

[0111] In the disclosed embodiment, the growth of the semiconductor layer can be achieved by using Veeco K465i or C4 or RB MOCVD equipment or AIXTRON metal organic compound chemical vapor deposition equipment. High purity H2 (hydrogen) or high purity N2 (nitrogen) or a mixture of high purity H2 and high purity N2 is used as a carrier gas, high purity NH3 is used as an N source, trimethyl gallium (TMGa) and triethyl gallium (TEGa) are used as gallium sources, trimethyl indium (TMIn) is used as an indium source, silane (SiH4) is used as an N-type dopant, trimethyl aluminum (TMAl) is used as an aluminum source, and bis(cyclopentadienyl) magnesium (CP2Mg) is used as a P-type dopant.

[0112] The second step is to grow the active layer.

[0113] Among them, the active layer is an InGaN / GaN layer.

[0114] Exemplarily, an InGaN / GaN layer is grown on the surface of the N-type GaN layer using MOCVD equipment.

[0115] The third step is to grow the second semiconductor layer.

[0116] Wherein, the second semiconductor layer is a P-type GaN layer.

[0117] Exemplarily, a P-type GaN layer is grown on the surface of the InGaN / GaN layer using MOCVD equipment.

[0118] In the fourth step, the first semiconductor layer, the active layer and the second semiconductor layer are patterned to form a step structure.

[0119] Exemplarily, an inductively coupled plasma (ICP) etching technique is used to pattern the first semiconductor layer, the active layer, and the second semiconductor layer stacked sequentially in the epitaxial structure to form a step structure.

[0120] S22. A normal anti-reflection film is fabricated on the light-emitting surface of the light-emitting diode chip, wherein the normal anti-reflection film comprises a first film layer and a second film layer which are alternately stacked, wherein the first film layer is a silicon oxide film layer, and the second film layer is a titanium oxide film layer, and the total number of layers of the first film layer and the second film layer is greater than or equal to 16 and less than or equal to 19.

[0121] Exemplarily, this step may include:

[0122] A plasma enhanced chemical vapor deposition (PECVD) machine is used to alternately deposit a first film layer and a second film layer on the surface of the passivation layer of the light emitting diode chip.

[0123] In the embodiment of the present disclosure, the first film layer is deposited at a deposition rate of 3 to 6 angstroms per second, and the second film layer is deposited at a deposition rate of 1 to 2 angstroms per second.

[0124] A 19-layer silicon oxide and titanium oxide film system is deposited on the chip surface. Compared with the 16-layer (Table 2) film system, the 19-layer structure eliminates the thinner layer. Then, the above-mentioned deposition speed is adopted, which can better monitor the thickness of each layer, reduce the monitoring error of the coating machine, improve stability, and reduce the impact of the film system offset on the chip brightness.

[0125] For example, a deposition rate of 3 angstroms / second is used to deposit a thickness of less than 0.800×10 3 The first film layer is deposited at a deposition rate of 6 angstroms / second to a thickness of not less than 0.800×10 3 The first film layer is deposited at angstroms, and the second film layer is deposited at a deposition rate of 1.5 angstroms / second.

[0126] In this implementation, since the normal antireflection film has a narrow application band bandwidth, the deposition rate of silicon oxide with a thickness less than 800 angstroms is set to 3 angstroms / s to reduce film manufacturing errors and make it easier to monitor thickness information.

[0127] In the embodiment of the present disclosure, the first film layer is a silicon dioxide (SiO2) film layer, and the second film layer is a titanium dioxide (TiO2) film layer.

[0128] In this implementation, a silicon dioxide film layer and a titanium dioxide film layer are used to form a normal anti-reflection film, so that the normal anti-reflection film can have a good transmission effect on small-angle incident light and a good reflection effect on large-angle incident light.

[0129] In the embodiment of the present disclosure, the total number of layers of the first film layer and the second film layer is 19.

[0130] In this implementation, 19 layers of first film layers and second film layers are used to form a normal anti-reflection film, so that the normal anti-reflection film can have a good transmission effect on small-angle incident light and a good reflection effect on large-angle incident light.

[0131] In an example, the first layer and the last layer of the normal anti-reflection film 20 are both the first film layer.

[0132] That is, the stacking order of the normal antireflection film 20 is SiO2 / TiO2 / SiO2 / TiO2 / SiO2 / TiO2 / ...TiO2 / SiO2.

[0133] In this implementation, using SiO2 as the starting film layer and the ending film layer can ensure better integration of the normal anti-reflection film with the light-emitting diode chip and the packaging structure on the one hand, and can ensure the normal anti-reflection effect on the other hand.

[0134] In other implementations, the first layer and the last layer of the normal anti-reflection film 20 may also be the second film layer.

[0135] The following description is made by taking the example that the first layer and the last layer of the normal anti-reflection film 20 are both the first film layer:

[0136] In the disclosed embodiment, the thickness ranges of the 19 film layers of the normal antireflection film 20 are respectively:

[0137] 0.890×10 3 ~0.900×10 3 Angstrom, 1.230×10 3 ~1.240×10 3 Angstrom, 0.810×10 3 ~0.820×10 3 Angstrom, 1.140×10 3 ~1.150×10 3 Angstrom, 0.760×10 3 ~0.770×10 3 Angstrom, 1.210×10 3~1.220×10 3 Angstrom, 0.700×10 3 ~0.710×10 3 Angstrom, 1.230×10 3 ~1.240×10 3 Angstrom, 0.750×10 3 ~0.760×10 3 Angstrom, 1.130×10 3 ~1.140×10 3 Angstrom, 0.800×10 3 ~0.810×10 3 Angstrom, 1.220×10 3 ~1.230×10 3 Angstrom, 1.070×10 3 ~1.080×10 3 Angstrom, 0.220×10 3 ~0.230×10 3 Angstrom, 3.140×10 3 ~3.150×10 3 Angstrom, 0.760×10 3 ~0.770×10 3 Angstrom.

[0138] In this implementation, each film layer is designed within the above thickness range, so that the normal anti-reflection film can achieve a better normal anti-reflection effect.

[0139] Exemplarily, the thicknesses of the 19 film layers of the normal antireflection film 20 are as follows:

[0140] 0.894×10 3 Angstrom, 1.237×10 3 Angstrom, 0.816×10 3 Angstrom, 1.140×10 3 Angstrom, 0.769×10 3 Angstrom, 1.216×10 3 Angstrom, 0.709×10 3 Angstrom, 1.233×10 3 Angstrom, 0.752×10 3 Angstrom, 1.136×10 3 Angstrom, 0.809×10 3 Angstrom, 1.223×10 3 Angstrom, 1.074×10 3 Angstrom, 0.220×10 3 Angstrom, 3.142×10 3 Angstrom, 0.767×10 3 Angstrom.

[0141] In this implementation, by using 19 film layers and the above-mentioned thicknesses of each film layer, a normal anti-reflection film with better effect can be obtained.

[0142] In addition, the last layer requires ICP etching, so the film thickness is thicker than other layers, which makes it easier to etch the film thickness during subsequent ICP etching, thereby roughening the surface, increasing light output efficiency and protecting the chip.

[0143] S23, performing patterning on the normal antireflection film to expose the electrodes of the light emitting diode chip.

[0144] Exemplarily, step S23 may include:

[0145] The normal antireflection film is shielded by ICP etching to expose the electrode.

[0146] The mask pattern can be made of positive photoresist, for example:

[0147] Place the LED chip on the glue machine and glue it;

[0148] After finishing the glue, put it in a baking tray and bake;

[0149] Exposing the photoresist through masking of the photomask;

[0150] After the exposure is completed, the exposed positive photoresist is developed using a positive photoresist developer to obtain a mask pattern.

[0151] For example, the speed of the coating on the coating machine is 2500 r / min, the temperature is 25° C., and the thickness of the coating is 0.8 μm.

[0152] The etching gas for the ICP etching is Ar gas, the ignition power is 150-200W, the etching power is 180-250W, the etching time is 50-100s, and the etching rate is 0.5-0.8 angstroms / s.

[0153] For example, the ignition power is 180 W, the etching power is 200 W, the etching time is 78 s, and the etching rate is 0.6 angstroms / s.

[0154] The AR gas concentration may be 800-1200 sccm, for example, 1000 sccm.

[0155] Optionally, the method may further include:

[0156] After the above manufacturing is completed, the chip is placed in a stripping solution to remove residual photoresist.

[0157] The degumming solution may be an organic degumming solution, and the soaking time is 300 seconds.

[0158] After soaking in the above degumming solution, soak in water for 100 seconds.

[0159] After soaking in water, the chip was placed in a spin dryer at a speed of 3600 r / min for 360 s to remove residual moisture on the chip surface.

[0160] In the embodiments of the present disclosure, a normal anti-reflection film is provided to greatly increase the probability of normal light emission from the chip, thereby improving the normal light intensity of the light-emitting diode chip. This can be well applied to fields such as smart wearables or specific angle lighting, and greatly reduces the difficulty of light emission from the packaging end, so as to achieve an increase in the light intensity of a specific product in a specific direction.

[0161] In addition, the light emitting diode has a small light emitting angle, and can emit light at a specific angle. It can be matched with an RGB display module to emit light only in the required direction, thereby improving the brightness at that angle and achieving a higher brightness display effect at that angle (such as the outdoor display screen scene at a concert).

[0162] The above description is only an optional embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A light emitting diode, characterized in that: The light emitting diode comprises: A light emitting diode chip (10) and a normal anti-reflection film (20) located on a light emitting surface of the light emitting diode chip (10); The normal anti-reflection film (20) comprises a first film layer and a second film layer which are alternately stacked, the first film layer is a silicon oxide film layer, the second film layer is a titanium oxide film layer, and the total number of layers of the first film layer and the second film layer is greater than or equal to 16 and less than or equal to 19.

2. The light emitting diode according to claim 1, characterized in that: The first film layer is a silicon dioxide film layer, and the second film layer is a titanium dioxide film layer.

3. The light emitting diode according to claim 1 or 2, characterized in that: The total number of layers of the first film layer and the second film layer is 19.

4. The light emitting diode according to claim 3, characterized in that: The first layer and the last layer of the normal anti-reflection film (20) are both the first film layer.

5. The light emitting diode according to claim 4, characterized in that: The thickness ranges of the 19 film layers of the normal antireflection film (20) are respectively: 0.890×10 3 ~0.900×10 3 Angstrom, 1.230×10 3 ~1.240×10 3 Angstrom, 0.810×10 3 ~0.820×10 3 Angstrom, 1.140×10 3 ~1.150×10 3 Angstrom, 0.760×10 3 ~0.770×10 3 Angstrom, 1.210×10 3 ~1.220×10 3 Angstrom, 0.700×10 3 ~0.710×10 3 Angstrom, 1.230×10 3 ~1.240×10 3 Angstrom, 0.750×10 3 ~0.760×10 3 Angstrom, 1.130×10 3 ~1.140×10 3 Angstrom, 0.800×10 3 ~0.810×10 3 Angstrom, 1.220×10 3 ~1.230×10 3 Angstrom, 1.070×10 3 ~1.080×10 3 Angstrom, 0.220×10 3 ~0.230×10 3 Angstrom, 3.140×10 3 ~3.150×10 3 Angstrom, 0.760×10 3 ~0.770×10 3 Angstrom.

6. The light emitting diode according to claim 5, characterized in that: The thicknesses of the 19 film layers of the normal antireflection film (20) are respectively: 0.894×10 3 Angstrom, 1.237×10 3 Angstrom, 0.816×10 3 Angstrom, 1.140×10 3 Angstrom, 0.769×10 3 Angstrom, 1.216×10 3 Angstrom, 0.709×10 3 Angstrom, 1.233×10 3 Angstrom, 0.752×10 3 Angstrom, 1.136×10 3 Angstrom, 0.809×10 3 Angstrom, 1.223×10 3 Angstrom, 1.074×10 3 Angstrom, 0.220×10 3 Angstrom, 3.142×10 3 Angstrom, 0.767×10 3 Angstrom.

7. A method for manufacturing a light emitting diode, characterized in that: The method comprises: Making light-emitting diode chips; A normal anti-reflection film is manufactured on the light-emitting surface of the light-emitting diode chip, wherein the normal anti-reflection film comprises a first film layer and a second film layer which are alternately stacked, wherein the first film layer is a silicon oxide film layer, and the second film layer is a titanium oxide film layer, and the total number of layers of the first film layer and the second film layer is greater than or equal to 16 and less than or equal to 19.

8. The method according to claim 7, characterized in that The total number of layers of the first film layer and the second film layer is 19.

9. The method according to claim 7 or 8, characterized in that: The method comprises manufacturing a normal anti-reflection film on the light emitting surface of the light emitting diode chip, comprising: The first film layer is deposited at a deposition rate of 3 to 6 angstroms per second, and the second film layer is deposited at a deposition rate of 1 to 2 angstroms per second.

10. The method according to claim 9, characterized in that The method of depositing the first film layer at a deposition rate of 3 to 6 angstroms per second and depositing the second film layer at a deposition rate of 1 to 2 angstroms per second comprises: The deposition rate is 3 angstroms / second and the thickness is less than 0.800×10 3 The first film layer is deposited at a deposition rate of 6 angstroms / second to a thickness of not less than 0.800×10 3 The first film layer is deposited at angstroms, and the second film layer is deposited at a deposition rate of 1.5 angstroms / second.

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