Electronic device

Abstract

The invention provides an electronic device which comprises a substrate and at least one light-emitting unit. The light-emitting unit comprises a light-emitting diode, a protective layer and a light conversion layer. The protective layer includes a portion having a cross-section, and the portion does not overlap the light emitting diode in a plan view direction of the electronic device. According to the electronic device disclosed by the invention, the influence of the outside or the subsequent process on the light emitting diode can be relieved, and the optical rotation performance and the reliability can be improved.

Description

[0001] This invention is a divisional application of the invention patent application with application number 201911181505.1 and invention name “Electronic Device” filed on November 27, 2019. Technical Field

[0002] The invention relates to an electronic device. Background Art

[0003] Electronic products have become an indispensable necessity in modern society. With the booming development of such electronic products, consumers have high expectations for the quality, function or price of these products.

[0004] Therefore, electronic products need to be improved, but current electronic products still have some problems that need to be solved. Summary of the invention

[0005] The present disclosure is directed to an electronic device and a manufacturing method thereof, providing an electronic device that can mitigate the effects of external factors or subsequent processes on light emitting diodes, or improve light emitting performance, or improve reliability, but is not limited thereto.

[0006] According to an embodiment of the present disclosure, an electronic device includes a substrate and at least one light-emitting unit. The light-emitting unit includes a light-emitting diode, a protective layer and a light conversion layer. The protective layer includes a portion having a cross section and not overlapping with the light-emitting diode in a top view direction of the electronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The accompanying drawings are included to provide a further understanding of the present invention and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the present invention and together with the description serve to explain the principles of the present invention.

[0008] Figure 1 is a cross-sectional schematic diagram of an electronic device according to an embodiment of the present disclosure;

[0009] Figures 2A to 2G A schematic top view of a partial manufacturing process of an electronic device according to an embodiment of the present disclosure;

[0010] Figures 3A to 3G For along Figures 2A to 2G Schematic diagram of the cross section along the AA' section line;

[0011] FIG. 4A to FIG. 4B is a cross-sectional schematic diagram of an electronic device according to an embodiment of the present disclosure;

[0012] FIG. 5A to FIG. 5C is a cross-sectional schematic diagram of a light emitting unit in an electronic device according to an embodiment of the present disclosure;

[0013] Figure 6is a cross-sectional schematic diagram of an electronic device according to an embodiment of the present disclosure;

[0014] Fig. 7A A schematic top view of an electronic device according to an embodiment of the present disclosure;

[0015] Figure 7B For along Fig. 7A Schematic diagram of the cross section along the AA' section line;

[0016] Fig. 8A is a cross-sectional schematic diagram of a light emitting unit in an electronic device according to an embodiment of the present disclosure;

[0017] Figure 8B and Figure 8C is a cross-sectional schematic diagram of a light emitting unit in one embodiment of the present disclosure;

[0018] Fig. 9A A schematic top view of an electronic device according to an embodiment of the present disclosure;

[0019] Fig. 9B A schematic top view of an electronic device according to an embodiment of the present disclosure;

[0020] Fig. 10A and Fig. 10B A schematic top view of a partial manufacturing process of a protective layer in one embodiment of the present disclosure;

[0021] Fig.11A and Fig. 11B for Fig. 10A and Fig. 10B Schematic diagram of the cross section along the AA' section line;

[0022] Fig.12 FIG. 4 is a cross-sectional diagram of an electronic device according to an embodiment of the present disclosure.

[0023] Description of Figure Numbers

[0024] 100, 400, 500, 700A, 700B, 800, 920, 990: electronic devices;

[0025] 102: Substrate;

[0026] 104, 420, 520, 600A, 600B, 600C, 804, 900A, 900B, 900C, 904, 910A, 910B: light emitting unit;

[0027] 110, 810: light emitting diode;

[0028] 112: a first doped semiconductor layer;

[0029] 112a, 112b, 112c, 112d: first doped semiconductor pattern;

[0030] 114: Active layer;

[0031] 116: a second doped semiconductor layer;

[0032] 120, 920: light conversion layer fixing structure;

[0033] 120F: substrate;

[0034] 120H, 920H, 920H R 、920H G : concave part;

[0035] 130, 530: light conversion layer;

[0036] 130a, 130b, 930R, 930G: light conversion patterns;

[0037] 130R, 530R: red light conversion layer;

[0038] 130G, 530G: Green light conversion layer;

[0039] 130B, 530B: blue light conversion layer;

[0040] 140, 240, 540, 640, 840, 940, 940G, 940R, 940M: protective layer;

[0041] 140P, 240P, 640P, 840P, 940P: parts with cross-section;

[0042] 140a: top;

[0043] 150: electrode;

[0044] 160: welding pad;

[0045] 170: coating;

[0046] 180: insulation layer;

[0047] 190: a first carrier substrate;

[0048] 210: a second carrier substrate;

[0049] 220: Sacrificial layer;

[0050] 250: transfer head;

[0051] 502: opposite substrate;

[0052] 502B: black matrix layer;

[0053] 640I: inorganic material layer;

[0054] 640O: organic material layer;

[0055] 710: Protective pattern;

[0056] 720: flat layer;

[0057] 910: Insulation reflective structure;

[0058] 940a: high refractive index film;

[0059] 940b: low refractive index film;

[0060] 942: reduced diameter portion;

[0061] A 140 , A 110 , A 140P , A 810 , A 840 , A 840P : orthographic projection area;

[0062] AG: Air Gap

[0063] A G1 , A G2 : long axis direction;

[0064] Ea, Eb, E R 、E G : luminous area;

[0065] R: cross section;

[0066] T1, T2: thickness. DETAILED DESCRIPTION

[0067] A structure (or layer, component, substrate) described in the present disclosure is located on or above another structure (or layer, component, substrate), which may refer to the two structures being adjacent and directly connected, or may refer to the two structures being adjacent but not directly connected. Indirect connection means that there is at least one intermediate structure (or intermediate layer, intermediate component, intermediate substrate, intermediate interval) between the two structures, the lower surface of one structure is adjacent to or directly connected to the upper surface of the intermediate structure, and the upper surface of the other structure is adjacent to or directly connected to the lower surface of the intermediate structure, and the intermediate structure can be composed of a single-layer or multi-layer physical structure or a non-physical structure, without limitation. The electrical connection or coupling described in the present disclosure may refer to direct connection or indirect connection. In the case of direct connection, the endpoints of the components on the two circuits are directly connected or connected to each other by a conductor segment, and in the case of indirect connection, there is a switch, diode, capacitor, inductor, resistor, other suitable components, or a combination of the above components between the endpoints of the components on the two circuits, but is not limited thereto.

[0068] In the present disclosure, the length and width can be measured by an optical microscope, and the thickness can be measured by a cross-sectional image in an electron microscope, but the method is not limited thereto. In addition, any two values ​​or directions used for comparison may have a certain error. If the first value is equal to the second value, it implies that there may be an error of about 10% between the first value and the second value; if the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.

[0069] In the present disclosure, the "luminescent color" of the luminescent layer refers to the color perceived by the observer after the electromagnetic radiation generated by the luminescent layer is received by the observer's eyes when the luminescent layer is located between two electrodes and a current flows through the luminescent layer. At this time, different luminescent colors correspond to different colors. Alternatively, the electromagnetic radiation may not be visible light. In this case, a corresponding spectrum will be obtained after being measured by an instrument, and different luminescent colors correspond to different spectrums.

[0070] In the present disclosure, the various embodiments described below may be mixed and matched without departing from the spirit and scope of the present disclosure. For example, some features of one embodiment may be combined with some features of another embodiment to form another embodiment.

[0071] Reference will now be made in detail to exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0072] Figure 1 This is a schematic diagram of an electronic device according to an embodiment of the present disclosure. Figure 1 , the electronic device 100 includes a substrate 102 and at least one light-emitting unit 104. The electronic device 100 may be a display device, a sensing device, a lighting device, an antenna device, a splicing device, other suitable devices or a combination of the above devices, but is not limited thereto. In at least some embodiments, the substrate 102 may be a rigid substrate or a flexible substrate, such as a transparent plastic substrate or a glass substrate. For example, the material of the substrate 102 includes glass, quartz, sapphire (sapphire), ceramic, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), liquid crystal polymers (LCP), rubber, glass fiber, ceramic, other suitable substrate materials, or a combination of the foregoing, but is not limited thereto.

[0073] The light-emitting unit 104 includes a light-emitting diode 110, a protective layer 140, and a light-conversion layer 130. The light-emitting unit 104 is disposed on the substrate 102. There may be a plurality of light-emitting units 104, and the plurality of light-emitting units 104 may be independently disposed on the substrate 102. In addition, in the present embodiment, the light-emitting unit 104 is described by taking an integrated light-emitting diode (integrated LED) as an example. Specifically, in the integrated light-emitting diode of the present embodiment, the light-emitting unit 104 has a plurality of light-emitting regions that can be independently controlled, such as the light-emitting region Ea and the light-emitting region Eb, and the light-conversion layer 130 may include a plurality of light-conversion patterns 130a and a light-conversion pattern 130b, which are respectively disposed in the light-emitting region Ea and the light-emitting region Eb. In other embodiments, the light-emitting unit 104 may also be a single-chip light-emitting diode (single LED) (described later).

[0074] like Figure 1 As shown, the two light emitting units 104 can be electrically and structurally independent from each other and configured on the substrate 102. In this embodiment, the protection layer 140 can be disposed between the light emitting diode 110 and the light conversion layer 130 as an example for description.

[0075] Please refer to Figure 1 The light emitting diode 110 may include a first doped semiconductor layer 112, an active layer 114, and a second doped semiconductor layer 116 in order from the side adjacent to the substrate 102. The first doped semiconductor layer 112 may include one of an N-type semiconductor layer or a P-type semiconductor layer (e.g., an N-type semiconductor layer), and the second doped semiconductor layer 116 may include the other of the N-type semiconductor layer or the P-type semiconductor layer (e.g., a P-type semiconductor layer). The active layer 114 may include a single layer or a plurality of layers of a quantum well structure. The N-type semiconductor layer may include an ln having an N-type dopant (e.g., silicon, germanium, tin, and / or the like). x Al y Ga (l-x-y) N, where 0≤x≤l, 0≤y≤l, 0≤x+y≤l. ln x Al y Ga (l-x-y) N may be, for example, indium aluminum gallium nitride (InAlGaN), gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), aluminum nitride, or indium nitride (InN), but is not limited thereto. The P-type semiconductor layer may include an InN with a P-type dopant (such as magnesium or the like). x Al y Ga (l-x-y) N, I will not go into details here.

[0076] More specifically, in the integrated light emitting diode 110 of the present embodiment, the first doped semiconductor layer 112 may include a first doped semiconductor pattern 112a and a first doped semiconductor pattern 112b. The electrode 150 may be electrically connected to a pad 160 on the substrate 102, so that a control signal may be input to the light emitting diode 110 via the pad 160 and the electrode 150, so that the light emitting area of ​​the light emitting diode 110 may be divided into light emitting areas, and thus the corresponding light emitting areas Ea and Eb in the light emitting unit 104 may be divided into light emitting areas, but the present invention is not limited thereto.

[0077] Please refer to Figure 1 , the light emitting unit 104 includes a protective layer 140 and a light conversion layer 130 disposed on the light emitting diode 110. In the present embodiment, the protective layer 140 may be disposed between the light conversion layer 130 and the light emitting diode 110. More specifically, the light emitting unit 104 may include a light conversion layer fixing structure 120 disposed on the light emitting diode 110, and the light conversion layer 130 may be disposed in a recess 120H of the light conversion layer fixing structure 120. A portion of the protective layer 140 may be disposed between the light conversion layer 130 filling the recess 120H and the light conversion layer fixing structure 120 along the morphology of the recess 120H of the light conversion layer fixing structure 120. The material of the protective layer 140 may be a material having a light transmittance of more than 50%, such as an inorganic material of an oxide film or a nitride film such as silicon oxide (SiOx) and silicon nitride (SiNx), or an organic material, but is not limited thereto. The organic material may include epoxy resin, acrylic resin (such as polymethyl methacrylate (PMMA)), benzocyclobutene, polyimide, polyester, polydimethylsiloxane, or polyfluoroalkoxy, other suitable organic materials, or combinations thereof. The material of the light conversion layer 130 may include quantum dot (QD) material, organic light emitting material, inorganic light emitting material, fluorescence material, phosphor material, color filter material, other suitable materials, or combinations thereof, but is not limited thereto.

[0078] like Figure 1As shown, the protective layer 140 includes a portion 140P, and the portion 140P may have a cross section R and does not overlap with the light emitting diode 110 in the top view direction of the electronic device 100. More specifically, the top view direction of the electronic device 100 is, for example, the normal direction of the substrate 102. In the present disclosure, "not overlapping with the light emitting diode 110" may mean that the portion 140P of the protective layer 140 does not overlap with the orthographic projection area of ​​the light emitting diode 110 on the substrate 102. In one embodiment, as Figure 1 As shown, the positive projection area A of the protective layer 140 on the substrate 102 140 It can be larger than the orthographic projection area A of the light emitting diode 110 on the substrate 102 110 The orthographic projection area of ​​the portion 140P of the protective layer 140 having the cross section R on the substrate 102 may be, for example, an orthographic projection area A of the protective layer 140 on the substrate 102. 140 The orthographic projection area A of the light emitting diode 110 on the substrate 102 110 Non-overlapping area A 140P In some embodiments, portion 140P may include a portion extending toward substrate 102 and / or a portion extending in a direction away from substrate 102 .

[0079] In one embodiment, the portion 140P of the protection layer 140 having the cross section R does not contact the light emitting diode 110. Specifically, the protection layer 140 may include a top portion 140a covering the top surface of the light conversion layer fixing structure 120 and a portion 140P extending outward and not contacting and overlapping the light emitting diode 110. Figure 1 As shown, the protective layer 140 is disposed adjacent to at least a portion of the top surface and side surfaces of the light emitting diode 110, and can reduce the intrusion of water vapor and oxygen, thereby reducing the deterioration or damage of the light emitting diode due to the intrusion of water vapor and oxygen, etc. In addition, the protective layer 140 extends outward from the light emitting diode 110 to reduce the film formed in the subsequent process from colliding with the light emitting diode 110, thereby reducing the impact of the subsequent process on the performance of the light emitting diode 110.

[0080] In this embodiment, the light-emitting unit 104 may include a plurality of light-emitting regions Ea and Eb, and the light-conversion layer 130 in different light-emitting regions Ea and Eb may be configured with light-conversion patterns 130a and 130b of different colors or the same color. By independently controlling the first doped semiconductor layer 112, the active layer 114, and the second doped semiconductor layer 116 corresponding to the light-emitting regions Ea and Eb, the light-emitting unit 104 may emit light of different colors in different light-emitting regions Ea and Eb and the corresponding light-conversion patterns 130. The light-conversion patterns 130a and 130b may be suitable materials for converting the light emitted by the light-emitting diode 110 into green, red, blue, or other colors.

[0081] In addition, the light-emitting unit 104 may include a coating layer 170 that covers at least a portion of the sidewall and bottom surface of the light-emitting diode 110 to further protect the light-emitting diode 110. The material of the coating layer 170 includes an inorganic material, such as an oxide film or a nitride film, but is not limited thereto. The coating layer 170 may be a composite layer. For example, the coating layer 170 may include a multi-layer reflective layer (such as an inorganic multi-layer film), or the coating layer 170 may include an insulating layer and a metal layer, and the insulating layer is disposed between the metal layer and the light-emitting diode 110. Figure 1 As shown, the electrode 150 may be exposed from the opening of the cladding layer 170 and electrically connected to the pad 160 on the substrate 102 .

[0082] In one embodiment of the present disclosure, the electronic device 100 further includes an insulating layer 180 disposed on the substrate 102. The insulating layer 180 may contact the portion 140P of the protective layer 140, which may further reduce the impact of the external environment on the performance of the light emitting diode 110. Figure 1 As shown, the thickness of the insulating layer 180 may be lower than the height of the light emitting diode 110, but is not limited thereto. In this embodiment, an air gap AG is formed between the surface of the insulating layer 180, the cladding layer 170 and the portion 140P of the protective layer 140, which helps to provide a heat dissipation space when the light emitting diode 110 emits light, or to mitigate the influence of the external environment on the light emitting diode 110.

[0083] In one embodiment, the thickness T1 of the portion where the protective layer 140 overlaps with the light-emitting diode 110 may be greater than the thickness T2 of the portion 140P where the protective layer 140 does not overlap with the light-emitting diode 110. In the present disclosure, the maximum thickness of the top 140a measured by taking a cross section along the normal direction of the substrate 102 may be set as the thickness T1, and the maximum thickness of the portion 140P measured by taking a cross section along a direction perpendicular to the local extension direction of the portion 140P may be set as the thickness T2.

[0084] Figures 2A to 2G FIG. 1 is a schematic top view of a partial manufacturing process of an electronic device according to an embodiment of the present disclosure. Figures 3A to 3G For along Figures 2A to 2G It should be understood that, according to some embodiments, additional operation steps may be provided before, during and / or after the manufacturing method of the electronic device disclosed herein. According to some embodiments, some of the operation steps may be replaced or deleted. According to some embodiments, the order of the operation steps is interchangeable.

[0085] Please refer to Figure 2A and Figure 3A, providing a substrate 120F. The material of the substrate 120F may include silicon (e.g., silicon wafer), or sapphire, ceramic, silicon carbide (SiC), gallium nitride (GaN), quartz, glass, or other suitable materials, or a combination thereof, but is not limited thereto. A first doped semiconductor material layer 112F, a second doped semiconductor material layer 116F, and an active material layer 114F are formed on the substrate 120F, and the active material layer 114F is disposed between the first doped semiconductor material layer 112F and the second doped semiconductor material layer 116F. Next, the first doped semiconductor material layer 112F, the second doped semiconductor material layer 116F, and the active material layer 114F are patterned to form a plurality of light emitting diodes 110 on the substrate 120F, wherein the light emitting diodes 110 include a first doped semiconductor layer 112, an active layer 114, a second doped semiconductor layer 116, and a cladding layer 170. The cladding layer 170 may cover the first doped semiconductor layer 112, the active layer 114, and the second doped semiconductor layer 116. The cladding layer 170 has openings corresponding to the first doped semiconductor patterns (e.g., the first doped semiconductor patterns 112a and the first doped semiconductor patterns 112b), and the electrode 150 is electrically connected to the first doped semiconductor patterns via the openings of the cladding layer 170. In one embodiment, Figure 2A Among the four electrodes 150 in the light emitting unit 110 shown, three of them may be electrically connected to the first doped semiconductor pattern of the first doped semiconductor layer 112 , and the other one may be electrically connected to the second doped semiconductor layer 116 , but the present invention is not limited thereto.

[0086] Please refer to Figure 2B and Figure 3B , forming a light conversion layer fixed structure 120. In one embodiment, the light emitting diode 110 formed on the substrate 120F is disposed on the first carrier substrate 190 in an inverted manner by placing the electrode 150. Next, the substrate 120F is patterned to form a recess 120H on the light emitting diode 110 to form a light conversion layer fixed structure 120. The position of the recess 120H in the light conversion layer fixed structure 120 may correspond to the first doped semiconductor pattern 112a and the first doped semiconductor pattern 112b. The number of recesses 120H may be adjusted according to the number or position of the predetermined light emitting regions Ea and Eb in one light emitting unit 104. For example, in the integrated light emitting diode of the present embodiment, the light emitting unit 104 has three light emitting regions, and this embodiment is described by taking the formation of three recesses 120H as an example. In subsequent embodiments, the light emitting unit may have only a single light emitting region, and the corresponding light emitting diode may also have only a single light emitting region. In addition, the method of patterning the substrate 120F includes, for example, forming a patterned photoresist on the substrate 102 , and etching the substrate 120F that is not shielded by the patterned photoresist to form the light conversion layer fixing structure 120 .

[0087] In one embodiment, the plurality of light emitting diodes 110 and the light conversion layer fixing structure 120 formed thereon may be separated from each other, for example, by using a cutting process, but the present invention is not limited thereto.

[0088] Please refer to Figure 2C and Figure 3C , the plurality of light emitting diodes 110 and the light conversion layer fixing structure 120 formed on the first carrier substrate 190 are selected in batches according to the preset spacing. For example, the first and third light emitting diodes 110 (such as Figure 2C (marked with dotted lines).

[0089] Then, if Figure 2D and Figure 3D , transfer the pre-selected light emitting diodes 110 to the second carrier substrate 210 having the sacrificial layer 220. In the next sequence, for example, Figure 2C The second and fourth light emitting diodes 110 are transferred to Figure 2D The second carrier substrate 210 is formed on the substrate 120F, thereby improving the utilization rate of the substrate 120F (which is, for example, an epitaxial substrate for forming the light emitting diode 110).

[0090] In one embodiment, after the light emitting diode 110 is transferred, the light emitting diode 110 on the second carrier substrate 210 may be subjected to a detection process, where the detection process may be, for example, a photodetector process and / or a repair process. It may be detected whether the light emitting diode 110 is damaged in the aforementioned patterning and transfer process, and if so, it may be repaired. If it cannot be repaired, the defective product is removed first. According to this process, the light emitting diode 110 may be detected and / or repaired in advance to reduce the defective rate.

[0091] exist Figure 2E and Figure 3E In the embodiment of the present invention, a protective layer 140 is formed on the light emitting diode 110 and the light conversion layer fixing structure 120 on the second carrier substrate 210. The protective layer 140 can cover the light conversion layer fixing structure 120 and extend outward. The protective layer 140 can be formed by forming an inorganic material or an organic material on the second carrier substrate 210 by coating or thin film deposition. The inorganic material can include silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. The organic material can include a polymer material, or an organic insulating layer, such as polytetrafluoroethylene (polyfluoroalkoxy), or a polyimide film (poly-imide), but is not limited thereto.

[0092] exist Figure 2F and Figure 3FIn the embodiment, the sacrificial layer 220 disposed between the light emitting diode 110 and the second carrier substrate 210 is removed. The material of the sacrificial layer 220 may include a photoresist material, an organic material, and / or an inorganic material. The photoresist material may include phenol-formaldehyde resin, epoxy resin, or polyisoprene rubber. The inorganic material may include silicon nitride, silicon oxide, silicon oxynitride, or aluminum oxide. The organic material may be as described above, so it is not repeated here. The method of removing the sacrificial layer 220 may include dry etching, wet etching, or a combination thereof. Then, the light emitting diode 110 including the protective layer 140 on the second carrier substrate 210 may be subjected to a detection process, where the detection process is, for example, a light detection process or other light detection procedures. For example, the detection process may be a non-destructive detection technology that uses a high-energy short-wavelength light source to directly irradiate a sample to cause it to emit fluorescence. The excited fluorescence is analyzed by a spectrometer, and the characteristics of the material can be known from the spectral characteristics, but it is not limited thereto.

[0093] Please refer to Figure 2G and Figure 3G The transfer head 250 can be used to attach the protective layer 140 on the top surface of the light-emitting diode 110, for example, by vacuum adsorption or optical adhesive. The transfer head 250 applies pressure F toward the second carrier substrate 210, and the protective layer 140 moves toward the space after the sacrificial layer 220 is removed due to the pressure, so that the protective layer 140 located between the light-emitting diodes 110 is disconnected, so that the portion of the protective layer 140 that does not overlap with the light-emitting diode 110 in the top view direction of the electronic device 100 forms a cross section R, forming a portion 140P of the protective layer 140 having the cross section R.

[0094] Please refer to Figure 1 Then, the light emitting diode 110 and the protective layer 140 having the section R portion 140P thereon can be transferred to the target substrate 102 and bonded to the pad 160 on the substrate 102 via the electrode 150. Specifically, the light emitting diode 110 having the protective layer 140 having the section R portion 140P thereon can be bonded to the electrode 150 on the substrate 102 via the electrode 150 by welding or the like, but the present invention is not limited thereto.

[0095] After bonding, the light emitting diode 110 on the target substrate 102 may be inspected, for example, the light emitting diode 110 may be fully inspected for electrical properties. If the inspection is normal, the packaging process may be performed. If the inspection is abnormal, a repair process may be performed before the packaging process, for example, defective products may be removed, re-bonded, the light emitting diode 110 may be updated, or abnormal circuits may be cut off. The packaging process may be, for example, forming an insulating layer 180 covering the substrate 102 on the substrate 102.

[0096] Afterwards, a light conversion layer forming process may be performed to form a light conversion layer 130 in the concave portion 120H of the light conversion layer fixing structure 120. In the present embodiment, the light emitting unit 104 may form a light conversion layer 130 having light conversion patterns 130a and light conversion patterns 130b of different colors corresponding to different light emitting regions Ea and Eb, but the present invention is not limited thereto. In some embodiments of the present disclosure, after the light conversion layer 130 is formed, a fully covered flat layer may be further formed to form a light conversion layer 130 as described below. Figure 6 structure.

[0097] In one embodiment, in the aforementioned Figure 3A After the manufacturing process. The light emitting diode 110 can be placed on the first carrier substrate 190 in an inverted manner, and then the substrate 120F is removed. Then, an organic material such as a photoresist is used to form a light conversion layer fixing structure 120 having a concave portion 120H on the light emitting diode 110. Then, the light conversion layer fixing structure 320 is cut, and the subsequent manufacturing process can refer to the aforementioned Figure 3B The following steps can be used to produce Figure 1 In the present embodiment, the material of the substrate 120F may be, for example, sapphire, but is not limited thereto.

[0098] FIG. 4A to FIG. 4B FIG. 4 is a cross-sectional diagram of an electronic device according to an embodiment of the present disclosure. FIG. 4A to FIG. 4B Unless otherwise specified, the same symbols are the same as those in the above embodiments. Figure 4A In the electronic device 400 of the embodiment, the light emitting diode 110 may be a single LED. In the light emitting unit 104 of the present embodiment, the light emitting unit may have a single light emitting region E. The recess 120H of the light conversion layer fixing structure 120 overlaps with the light emitting region E in the top view direction of the electronic device 400, and the light conversion layer 130 is disposed in the recess 120H. The light emitting diode 110 may be, for example, a blue light diode, but is not limited thereto.

[0099] exist Figure 4B In the electronic device 500, the protective layer 540 can be directly formed on the light-emitting diode 110, and the protective layer 540 includes a portion 540P having a cross section R and not overlapping with the light-emitting diode 110. In the present embodiment, the protective layer 540 is in contact with the second doped semiconductor layer 116 of the light-emitting diode 110. The light conversion layer 530 can be formed on the opposite substrate 502, and the light conversion layer 530 overlaps with the light-emitting diode 110 on the orthographic projection area of ​​the substrate 102. In the present disclosure, if not specifically stated, the overlap can be "complete overlap" or "partial overlap". The material of the light conversion layer 530 can be the same as or similar to that of the light conversion layer 130, which will not be repeated here.

[0100] FIG. 5A to FIG. 5C FIG. 1 is a cross-sectional schematic diagram of a light emitting unit in an electronic device according to an embodiment of the present disclosure. FIG. 5A to FIG. 5C Unless otherwise specified, the same symbols are the same as those in the above embodiments. Figure 5A In the light-emitting unit 600A, the portion of the protective layer 640 that overlaps with the light-emitting diode 110 in the top view direction of the electronic device includes an inorganic material layer 640I and an organic material layer 640O, and the protective layer 640 includes a portion 640P having a cross section R in the region that does not overlap with the light-emitting diode 110. Figure 5A In the embodiment, the light conversion layer 130 is disposed between the inorganic protective layer 640I and the organic protective layer 640O, and another inorganic protective layer 640I is disposed on the organic protective layer 640O. The manufacturing method thereof can be as described above. Figures 3A to 3G and Figure 1 in a way that Figure 3G Afterwards, the process also includes the steps of forming an organic protection layer 640O and an inorganic material layer 640I.

[0101] exist Figure 5B In the light-emitting unit 600B, the light conversion layer 130 may be directly filled in the concave portion 120H of the light conversion fixing structure 120, and the protective layer 640 is disposed on the light conversion layer 130 and the light conversion fixing structure 120. In the present embodiment, the protective layer 640 may include an inorganic material layer 640I, an organic material layer 640O, and a stack of inorganic material layers 640I in sequence on the top surface of the light conversion layer 130, and the protective layer 640 includes a portion 640P having a cross section R in a region that does not overlap with the light-emitting diode 110. In one embodiment, only the inorganic material layer 640I may be formed on the top surface of the light conversion layer 130, and the organic material layer 640O and the inorganic material layer 640I disposed above and on the side of the organic material layer 640O may be omitted.

[0102] exist Figure 5C In the light-emitting unit 600C, the protective layer 640 is in direct contact with the light-emitting diode 110. The protective layer 640 may include an inorganic material layer 640I, an organic material layer 640O and an inorganic material layer 640I on the top surface of the light-emitting diode 110. Figure 5C As shown, it can be formed on the opposite substrate 502. FIG. 5A to FIG. 5C The disclosed embodiment can form an inorganic / organic / inorganic stacked packaging structure above the light emitting diode 110, thereby enabling the protective layer to have the density of inorganic materials and the flatness of organic materials. In addition, the protection of the organic material layer can further mitigate the impact on the light emitting diode during the aforementioned transfer process, reducing the chance of damage. FIG. 5A to FIG. 5C, an inorganic / organic / inorganic stacked packaging structure is shown, but the present disclosure is not limited thereto. In other embodiments, the portion of the protective layer 640 overlapping with the light-emitting diode 110 in the top-view direction of the electronic device may include an inorganic / organic stack, an organic / inorganic stack, an organic / inorganic / organic stack, an inorganic / organic / inorganic / organic stack, or an organic / inorganic / organic / inorganic stack, but is not limited thereto. For example, an organic / inorganic / organic stack means that an inorganic layer is disposed on a first organic layer, and a second organic layer is disposed on an inorganic layer.

[0103] It is worth noting that Figure 5B In the light emitting unit 104 shown in FIG. 1 , the manufacturing method thereof can be, for example, Figure 3D After the steps of: first filling the light conversion layer 130 into the light conversion layer fixing structure 120, then forming a protective layer 640 composed of an organic material layer 640I, an organic material layer 640O and an inorganic material layer 640I, and then performing Figures 3E to 3G In other words, the present disclosure can be performed by adjusting the aforementioned Figure 1 , Figures 3E to 3G The relative position relationship between the protective layer and the light conversion layer in the light emitting unit 104 is adjusted by adjusting the order of the steps of filling the light conversion layer 130 and the protective layer 140 .

[0104] Figure 6 FIG. 1 is a cross-sectional diagram of an electronic device according to an embodiment of the present disclosure. Figure 6 Zhongyu Figure 1 Please refer to the previous text for explanations of the same symbols. Figure 6 In the electronic device 700A, a protection pattern 710 may be respectively disposed on the light conversion pattern 130a and the light conversion pattern 130b of different light emitting areas Ea and Eb of the light emitting unit 704. The protection pattern 710 may be lens-shaped, but is not limited thereto. In some embodiments, the protection pattern 710 may be used to appropriately diverge the light emitted from the light emitting area Ea and the light emitting area Eb, reduce the collimation of the light, or expand the range of the light emitting area Ea and the light emitting area Eb, so that the light is emitted more uniformly, but is not limited thereto. The material of the protection pattern 710 is, for example, an organic material such as epoxy resin. In addition, Figure 6 In the embodiment, the electronic device may further include a planar layer 720 disposed on the insulating layer 180 , and the planar layer 720 may cover the light emitting unit 704 .

[0105] Fig. 7A is a top view of an electronic device according to an embodiment of the present disclosure, and Figure 7B For along Fig. 7A Schematic diagram of the cross section along the AA' section line. Fig. 7A and Figure 7B Zhongyu Figure 1Please refer to the previous text for the description of the same symbols. However, in the light-emitting unit 804 of the electronic device 800 of the present embodiment, a plurality of (for example, three) light-emitting diodes 810 share a continuous protective layer 840. That is, in the same light-emitting unit 804, the protective layer 840 above each of the light-emitting diodes 810 may be continuous. In the same light-emitting unit 804, only the protective layer 840 above the outermost light-emitting diodes 810 has the aforementioned disconnected portion 840P, while the protective layer 840 above the middle light-emitting diode is connected to the adjacent protective layer 840. Fig. 7A and Figure 7B As shown, the three light-emitting diodes 810 have a positive projection area A on the substrate 102. 810 This area is, for example, the size of three LEDs 810 plus twice the size of the spacing between the LEDs 810. The orthographic projection area of ​​the portion 840P of the protective layer 840 having the cross section R on the substrate 102 is, for example, the orthographic projection area A of the protective layer 840 on the substrate 102. 840 The orthographic projection area A of the three light emitting diodes 110 on the substrate 102 810 Non-overlapping area A 840P .

[0106] Fig. 8A FIG. 1 is a cross-sectional schematic diagram of a light emitting unit in an electronic device according to an embodiment of the present disclosure. Fig. 8A Unless otherwise specified, the same symbols are the same as those in the above embodiments. Fig. 8A In the light-emitting unit 900A, the protective layer 940 includes a portion 940P having a cross section R in an area that does not overlap with the light-emitting diode 110, and a reflective structure 910 may be provided on the outside and inside of the light-emitting diode 110. The material of the reflective structure 910 may include an insulating material and / or a metal material. The insulating material may be, for example, an inorganic material, but is not limited thereto. For example, the reflective structure 910 may be formed by a plurality of inorganic layers such as an oxide film or a nitride film, and the light emitted from the light-emitting diode 110 may be subjected to total Bragg reflection by modulating the n value of the film layer, but is not limited thereto. The reflective structure 910 may be used to concentrate the light to be emitted toward the light-emitting surface, thereby increasing the light utilization rate of the light conversion layer.

[0107] Figure 8B and Figure 8C FIG. 1 is a cross-sectional diagram of a light emitting unit in an embodiment of the present disclosure. Figure 8B and Figure 8C For the explanation of the same symbols as above, please refer to the previous text. Figure 8BIn the light-emitting unit 900B, the protective layer 940 includes a portion 940P having a cross section R. The protective layer 940 can be a reflective layer composed of film layers with different N values, or can be a stack of multiple inorganic films. A Bragg reflection film can be formed by stacking a higher refractive index film 940a and a lower refractive index film 940b, thereby increasing the light-emitting efficiency.

[0108] exist Figure 8C In the light-emitting unit 900C, the light-emitting areas E of different colors R , light-emitting area E G The recess 920H of the light conversion layer fixing structure 920 may have different depths and / or widths. R and concave 920H G . In different recesses 920H R and concave 920H G Different colors of light conversion patterns 930R and 930G may be filled in the light conversion pattern 930R and 930G. Since different colors of light conversion patterns may have different light conversion efficiencies, the corresponding depths and / or widths may be different from each other. In another embodiment, the protective layers configured in different depths 920H may have different refractive index N values ​​or different stacking numbers, thereby increasing the luminous efficiency. For example, the light conversion layer fixing structure 920 is in the red light area E R The recess 920H R The depth can be greater than the green light area E G The recess 920H G Depth, located in the red light area E R The protective layer 940R is formed by stacking three layers of multilayer films and is located in the green light region E. G The protective layer 940G is, for example, formed by stacking five layers of multilayer films. R , light-emitting area E G A stack consisting of different numbers of layers is formed.

[0109] Fig. 9A FIG. 1 is a top view of an electronic device in which light emitting diodes are transferred in batches (stamp transfer) to a substrate by a transfer head in one embodiment of the present disclosure. Figure 3G In the step of transferring the light-emitting units 910A and 910B composed of the plurality of light-emitting diodes 110 and the protective layer 140 from the second carrier substrate 210 to the substrate 102 in batches, the light-emitting units 910A and 910B transferred in the same batch can usually be arranged neatly. However, when miss-alignment occurs between batches, the human eye can easily observe uneven splicing between batches.

[0110] In order to alleviate the uneven splicing phenomenon, Fig. 9B FIG. 1 is a top view of an electronic device according to an embodiment of the present disclosure. Before the light emitting units 910A and the light emitting units 910B are transferred to the target substrate 102, the light emitting units 910A and the light emitting units 910B of the same batch are arranged in different ways. For example, among the light emitting units 910A and the light emitting units 910B of the same batch, the long axis direction (e.g., the long axis direction A) of the light emitting units 910A in a row is G1 ) may be different from the long axis direction (eg, long axis direction A) of the plurality of light emitting units 910A in adjacent straight rows. G2 ), but not limited thereto. Accordingly, the light emitting units 910A with different arrangements can blur the unevenness of the splicing and alleviate the unevenness problem caused by splicing alignment errors. Fig. 9A When the plurality of light-emitting units 910A and 910B are arranged in a regular pattern, the long axis direction A of the light-emitting unit 910A and the light-emitting unit 910B with the same color of the light-emitting layer 130 is G In more detail, the light conversion patterns in the light emitting unit 910A and the light emitting unit 910B may include a red light conversion layer 130R, a green light conversion layer 130G, and a blue light conversion layer 130B, respectively. For example, Fig. 9A The long axis direction A of the green light conversion pattern 130R of the plurality of light emitting units 910A is G are consistent and substantially parallel to the Y direction.

[0111] In contrast, Fig. 9B When the arrangement of the plurality of light emitting units 910A and 910B is disrupted, the long axis directions of the light conversion patterns of the same color in at least some of the light emitting units 910A and 910B may be inconsistent. Fig. 9B In the light emitting unit 910A located in the first row and the first column, the long axis direction of the green light conversion layer 130G is A G1 , and in the light-emitting unit 910B in the first column and the second row, the long axis direction of the green light conversion layer 130G is A G2 , the two are inconsistent.

[0112] Fig. 10A and Fig. 10B FIG. 1 is a schematic top view of a partial manufacturing process of a protective layer in an embodiment of the present disclosure. Fig.11A and Fig. 11B for Fig. 10A and Fig. 10B The protective layer is formed in the manner described above. Figure 3G In addition to the method of pressing down the transfer head 250 to break the protective layer, the Fig. 10A and Fig. 10B and Fig.11A and Fig. 11BThe protective layer may include a conductor layer, and the top view and cross-sectional view of the conductor layer are as shown in Fig. 10A , Fig. 10B and Fig.11A .

[0113] like Fig. 10A and Fig.11A As shown in FIG. 1 , in the top view direction, the protective layer 940M has a reduced diameter portion 942 that spans the second carrier substrate 210 and the light conversion layer 130. Fig. 10A , Fig. 10B and Fig. 11B As shown in FIG. 1 , selectively applying voltage to the protective layer 940M can achieve selective transfer. The reduced diameter portion 942 of the protective layer 940M can be burned out by applying voltage, forming a Fig. 11B The electronic device 920 includes a protective layer 940M having a portion 940P with a cross section R above the light emitting diode 110. In one embodiment, the width of the reduced diameter portion 942 is smaller than the width of the light emitting diode 110. For example, the ratio of the width of the reduced diameter portion 942 to the width of the light emitting diode 110 may be between 0.2 and 0.8 (0.2≤ratio≤0.8), such as 0.4, or 0.6, but is not limited thereto.

[0114] Fig.12 1 is a cross-sectional view of an electronic device according to an embodiment of the present disclosure. The electronic device 990 includes a substrate 102 and a light-emitting unit 904, wherein the light-emitting unit 904 may include a light-emitting diode 110, a protective layer 540, and a light-converting layer 530. Figure 4B Similarly, the light emitting diode 110 includes a first doped semiconductor layer 112, an active layer 114 and a second doped semiconductor layer 116, and a protective layer 540 having a cross section R and a portion 540P that does not overlap with the light emitting diode 110 in the top view direction of the electronic device 990. In the light emitting unit 904 of the present embodiment, the light conversion layer 530 is, for example, disposed on the opposite substrate 502. The opposite substrate 502 may include a black matrix layer 502B and a light conversion layer 530 disposed between the black matrix layers 502B. For example, the light conversion layer 530 may include a red light conversion layer 530R, a green light conversion layer 530G, and / or a blue light conversion layer 530B, which correspond to the light emitting regions of the light emitting unit 904, respectively, but are not limited thereto. In addition, the planar layer 720 and the adhesive layer 920 may be disposed between the protective layer 540 and the light conversion layer 530, and the adhesive layer 920 may be disposed between the planar layer 720 and the light conversion layer 530. In some embodiments, the adhesive layer 920 may be omitted.

[0115] According to an embodiment of the present disclosure, a method for manufacturing an electronic device may include at least the following steps: providing a substrate; forming at least one light-emitting unit on the substrate; the light-emitting unit includes a light-emitting diode, a protective layer, and a light conversion layer; the protective layer includes a portion having a cross section and not overlapping with the light-emitting diode in a top view direction of the electronic device.

[0116] In the electronic device of the disclosed embodiment, the light-emitting unit includes a portion having a cross section and not overlapping with the light-emitting diode in the top view of the electronic device. Accordingly, the protective layer with such a structure can protect the light-emitting diode more comprehensively, and can reduce the intrusion of water vapor or oxygen, thereby reducing the deterioration or damage of the light-emitting diode due to the intrusion of water vapor or oxygen, etc. In addition, the extension of the protective layer extending outward from the light-emitting diode can reduce the film formed in the subsequent process from hitting the light-emitting diode, thereby reducing the impact of the subsequent process on the performance of the light-emitting diode.

[0117] In some embodiments, the light-emitting unit may have an inorganic / organic / inorganic protective layer on the top surface, and an insulating layer, a flat layer, etc. may be configured on the substrate, which can further reduce the impact of the external environment on the light-emitting diode. In some embodiments, the light-emitting unit may include an insulating reflective structure, or the light conversion layer may have different refractive indices corresponding to different colors of the protective layer, or the light conversion layer may have different filling thicknesses. In some embodiments, the long axis directions of the same color light conversion patterns in a plurality of the light-emitting units may be inconsistent, thereby reducing the uneven splicing caused by alignment errors during splicing. Overall, the light-emitting device of the disclosed embodiment can provide an improved light-emitting effect and enhance the quality of the electronic device.

[0118] Although the present disclosure has been described with reference to preferred aspects, those skilled in the art will recognize that changes may be made in form and detail without departing from the spirit and scope of the present disclosure. The features of the various embodiments may be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other.

Claims

1. An electronic device, characterized in that: The electronic device comprises: substrate; and At least one light-emitting unit is disposed on the substrate, and the at least one light-emitting unit includes: light emitting diodes; and An organic material layer is formed with a plurality of grooves, and the organic material layer is disposed on the light emitting diode.

2. The electronic device according to claim 1, characterized in that: The plurality of grooves are arranged corresponding to the light emitting diodes.

3. The electronic device according to claim 1, characterized in that: The electronic device further includes an insulating layer disposed between the substrate and the organic material layer.

4. The electronic device according to claim 3, characterized in that: The organic material layer includes a portion, wherein in a top-view direction of the electronic device, the portion does not overlap with the light-emitting diode.

5. The electronic device according to claim 4, characterized in that: The insulating layer overlaps the portion of the organic material layer. The electronic device according to claim 4 , wherein the portion comprises a section.

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