Display panel and manufacturing method thereof

Abstract

The embodiment of the invention provides a display panel and a manufacturing method of the display panel, and relates to the technical field of display. In the display panel, a light absorption layer is located on the side, provided with a driving electrode, of a driving backboard and located on the peripheral side of the driving electrode, a device electrode of a light-emitting device is electrically connected with the driving electrode, and the side, provided with the device electrode, of a light-emitting device body is bonded with the light absorption layer. The side, provided with the device electrode, of the light-emitting device body can be bonded with the light absorption layer, the capability of attaching the light-emitting device to the driving backboard can be improved, the transfer yield is improved, and the manufacturing yield of the display panel is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular, to a display panel and a method for manufacturing the display panel. Background Art

[0002] Micro-LED displays are made by thinning, miniaturizing and arraying the structure of light-emitting devices (LEDs), and then transferring them to the driver backplane through mass transfer technology to form LEDs with nanometer-level spacing. In the mass transfer process, the transfer yield is an important indicator for measuring the process of Micro-LED displays. Therefore, how to improve the transfer yield has become a technical problem that technicians in this field urgently need to solve. Summary of the invention

[0003] In order to overcome the technical problems mentioned in the above technical background, an embodiment of the present application provides a display panel and a method for manufacturing the display panel.

[0004] In a first aspect of the present application, a display panel is provided, the display panel comprising:

[0005] A driving backplane, wherein one side of the driving backplane is provided with driving electrodes, and adjacent driving electrodes are isolated;

[0006] A light absorbing layer, the light absorbing layer is located on a side of the driving back plate where the driving electrode is disposed, and is located around the driving electrode;

[0007] A light emitting device comprises a light emitting device body and a device electrode arranged on one side of the light emitting device body, wherein the device electrode is electrically connected to the driving electrode, and the side of the light emitting device body where the device electrode is arranged is bonded to the light absorbing layer.

[0008] In a possible embodiment of the present application, in a direction perpendicular to the driving backplane, a film height of the light absorbing layer is higher than a height of the driving electrode;

[0009] In a direction perpendicular to the driving backplane, the total height of the driving electrode and the device electrode after being electrically connected is the same as the film height of the light absorbing layer.

[0010] In a possible embodiment of the present application, at least part of the driving electrodes are in contact with the light absorbing layer;

[0011] Preferably, at least part of the device electrodes are in contact with the light absorbing layer.

[0012] In a possible embodiment of the present application, the light absorbing layer is a viscous light absorbing material layer, and the material of the light absorbing layer includes a black organic silicon material;

[0013] Preferably, in a direction perpendicular to the driving backplane, a film height of the light absorbing layer is 0.1 um to 5 um higher than a height of the driving electrode.

[0014] In a possible embodiment of the present application, the driving electrode includes at least one layer of metal;

[0015] The material of the driving electrode includes indium, tin, gold or alloy;

[0016] Preferably, the driving backplane includes: a printed circuit driving backplane, a low temperature polysilicon driving backplane, a complementary metal oxide semiconductor driving backplane and an indium gallium zinc oxide driving backplane.

[0017] In a possible embodiment of the present application, the light emitting device includes a first light emitting device, a second light emitting device and a third light emitting device for emitting lights of different colors;

[0018] Preferably, the first light emitting device is a red light emitting device, the second light emitting device is a green light emitting device, and the third light emitting device is a blue light emitting device;

[0019] Preferably, the first light emitting device is a gallium arsenide-based light emitting diode, and the second light emitting device and the third light emitting device are gallium nitride-based light emitting diodes.

[0020] A second aspect of the present application provides a method for manufacturing a display panel, the method comprising:

[0021] Providing a driving backplane, wherein one side of the driving backplane is provided with driving electrodes, and adjacent driving electrodes are isolated;

[0022] A light absorbing material layer covering the driving electrode is formed on a side of the driving backplane where the driving electrode is provided;

[0023] Patterning the light absorbing material layer on the driving electrode to expose the driving electrode, thereby obtaining a light absorbing layer located around the driving electrode;

[0024] The light emitting device is transferred to the side of the driving backplane where the driving electrode is arranged, so that the side of the light emitting device body where the device electrode is arranged in the light emitting device is bonded to the light absorbing material layer, and then the device electrode is electrically connected to the driving electrode.

[0025] In a possible embodiment of the present application, the step of manufacturing a light absorbing material layer covering the driving electrode on a side of the driving backplane where the driving electrode is disposed includes:

[0026] A black organic silicon material is coated on one side of the driving backplane where the driving electrode is arranged, and a light absorbing material layer whose film height is higher than that of the driving electrode is formed in a direction perpendicular to the driving backplane.

[0027] In a possible embodiment of the present application, the step of patterning the light absorbing material layer on the driving electrode to expose the driving electrode to obtain the light absorbing layer on the peripheral side of the driving electrode includes:

[0028] Coating a photoresist layer on the light absorbing material layer, and removing the photoresist in the area corresponding to the driving electrode by exposure and development to form a photoresist opening corresponding to the driving electrode;

[0029] The light absorbing material layer corresponding to the photoresist opening position is removed by etching to expose the driving electrode, and then the remaining photoresist layer is removed to obtain a light absorbing layer arranged around the driving electrode.

[0030] In a possible embodiment of the present application, the step of transferring the light-emitting device to the side of the driving backplane where the driving electrode is provided, bonding the side of the light-emitting device where the device electrode is provided to the light-absorbing material layer, and then electrically connecting the device electrode to the driving electrode includes:

[0031] Transferring the light-emitting device to the side of the driving backplane where the driving electrode is provided, aligning the device electrode of the light-emitting device with the driving electrode on the driving backplane, and bonding the side of the light-emitting device body where the device electrode is provided to the light-absorbing material layer;

[0032] The device electrode and the driving electrode are subjected to heating and pressure treatment to electrically connect the device electrode and the driving electrode.

[0033] The embodiment of the present application provides a display panel and a method for manufacturing the display panel. In the display panel, the light absorbing layer is located on the side of the driving backplane where the driving electrode is set and on the peripheral side of the driving electrode, the device electrode is electrically connected to the driving electrode, and the side of the light emitting device body where the device electrode is set is bonded to the light absorbing layer. With such a design, the side of the light emitting device body where the device electrode is set can be bonded to the light absorbing layer, which can improve the ability of the light emitting device to attach to the driving backplane, improve the transfer yield, and improve the manufacturing yield of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0035] Figure 1 This is a schematic diagram of a film layer structure of a display panel provided in this embodiment;

[0036] Figure 2 A schematic diagram of the relative position relationship between the driving electrode and the light emitting device provided in this embodiment;

[0037] Figure 3 Example Figure 1 Schematic diagram of the membrane layer structure in the middle;

[0038] Figure 4 The second schematic diagram of the film layer structure of the display panel provided in this embodiment;

[0039] Figure 5 A schematic diagram of a process of manufacturing a display panel provided in this embodiment;

[0040] Figure 6 for Figure 5 The corresponding process flow chart;

[0041] Figure 7 for Figure 5 Specific process flow chart of step S30.

[0042] Icon: 10-display panel; 110-driving backplane; 1101-driving backplane; 120-light-emitting layer; 120'-light-emitting material layer; 130-light-emitting device; 130a-first light-emitting device; 130b-second light-emitting device; 130c-third light-emitting device; 1301-device electrode; 1302-light-emitting device body; 200-photoresist layer; 210-photoresist opening. DETAILED DESCRIPTION

[0043] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0044] In the description of the present application, it should be noted that the terms "upper", "lower", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the product of the application is usually placed when in use. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0045] After analyzing the technical problems mentioned in the background technology, the inventors found that the factors affecting the transfer yield include not only the transfer accuracy during transfer, but also the change in the positional relationship between the light-emitting device and the driving backplane after the transfer. For example, before the light-emitting device and the driving backplane are bonded, the light-emitting device and the driving backplane move relative to each other due to external factors, resulting in poor alignment in the end.

[0046] In order to solve the above technical problems, the inventor innovatively designs the following technical solutions, and the specific implementation solutions of this application will be described in detail below in conjunction with the accompanying drawings.

[0047] It should be noted that the defects existing in the solutions in the above-mentioned prior art are the results obtained by the inventor after practice and careful research. Therefore, the discovery process of the above-mentioned technical problems and the solutions proposed in the embodiments of the present application for the above-mentioned problems below should all be the contributions made by the inventor to the present application in the process of invention and creation, and should not be understood as technical contents known to technical personnel in this field.

[0048] Please refer to Figure 1 , Figure 1 One of the schematic diagrams of the film layer structure of the display panel 10 provided in this embodiment is illustrated. In this embodiment, the display panel 10 includes a driving backplane 110, a light absorbing layer 120 and a light emitting device 130. The driving backplane 110 includes a driving electrode 1101, and the driving electrode 1101 is arranged on one side of the driving backplane 110. At least one driving electrode 1101 is distributed on the driving backplane 110. When there are multiple driving electrodes 1101, the driving electrodes 1101 can be distributed in an array on the driving backplane 110, and adjacent driving electrodes 1101 are isolated, that is, gaps are left between adjacent driving electrodes 1101. For example, as Figure 2 As shown, two adjacent driving electrodes 1101 are used to bond with the device electrode 1301 of the light emitting device 130 .

[0049] The light absorbing layer 120 is located on the side of the driving backplane 110 where the driving electrode 1101 is disposed, and the light absorbing layer 120 is located around the driving electrode 1101. Optionally, the light absorbing layer 120 is disposed around the driving electrode 1101. The orthographic projection of the light absorbing layer 120 on the driving backplane 110 and the orthographic projection of the driving electrode 1101 on the driving backplane 110 at least partially do not overlap.

[0050] The light emitting device 130 includes a light emitting device body 1302 and a device electrode 1301 disposed on one side of the light emitting device body 1302. The device electrode 1301 is electrically connected to the driving electrode 1101. For example, the device electrode 1301 and the driving electrode 1101 can be connected by solder bonding or by bonding with anisotropic conductive film (ACF). The side of the light emitting device 130 where the device electrode 1301 is disposed is bonded to the light absorbing layer 120. In this embodiment, the light absorbing layer 120 has a certain viscosity. The light absorbing layer 120 is bonded to the side of the light emitting device body 1302 where the device electrode 1301 is disposed through its own viscosity.

[0051] Such a design can improve the ability of the light emitting device 130 to be attached to the driving backplane 110, increase the transfer yield, and improve the manufacturing yield of the display panel.

[0052] In this embodiment, please refer to Figure 3 In the direction perpendicular to the driving backplane 110 (the Y-axis direction in the figure), the film height of the light absorbing layer 120 is higher than the height of the driving electrode 1101, that is, the light absorbing layer 120 will form a groove exposing the driving electrode 1101 at the position of the driving electrode 1401, and the device electrode 1301 of the light emitting device 130 is connected to the driving electrode 1101 by extending into the groove.

[0053] Furthermore, in the direction perpendicular to the driving backplane 110, the total height of the driving electrode 1101 and the device electrode 1301 after being electrically connected (the sum of the heights of the driving electrode 1101 and the device electrode 1301) is ) The film height is the same as that of the light absorbing layer 120 . This configuration allows the side of the light emitting device body 1302 where the device electrode 1301 is disposed to adhere to the light absorbing layer 120 , thereby improving the ability of the light emitting device 130 to adhere to the driving backplane 110 .

[0054] In this embodiment, at least a portion of the driving electrode 1101 is in contact with the light absorbing layer 120, and the side surface of the driving electrode 1101 may be in contact with the light absorbing layer 120, or the side surface of the driving electrode 1101 and the portion of the top surface of the driving electrode 1101 away from the driving back plate 110 are in contact with the light absorbing layer 120, wherein the side surface of the driving electrode 1101 in contact with the light absorbing layer 120 may be a portion of the side surface of the driving electrode 1101 or the entire side surface of the driving electrode 1101; in addition, the portion of the top surface of the driving electrode 1101 in contact with the light absorbing layer 120 refers to the portion of the top surface that does not affect the electrical connection between the driving electrode 1101 and the device electrode 1301, for example, the portion of the top surface may be the top surface area that remains after the driving electrode 1101 is electrically connected to the device electrode 1301. Similarly, the device electrode 1301 may also be in contact with the light absorbing layer 120 . For example, at least a portion of the device electrode 1301 is in contact with the light absorbing layer 120 , and the side surface of the device electrode 1301 may be in contact with the light absorbing layer 120 .

[0055] In this embodiment, the light absorbing layer 120 is a viscous light absorbing material layer, and the material of the light absorbing layer 120 includes a black silicone material. Exemplarily, the material of the light absorbing layer 120 can be a silicone material that can be photolithographically processed, and the pattern of the light absorbing layer 120 can be formed by photolithography.

[0056] Preferably, in the direction perpendicular to the driving backplane 110 , the film height of the light absorption layer 120 is 0.1um to 5um higher than the height of the driving electrode 1101 . Exemplarily, the film height of the light absorption layer 120 is 0.1um, 0.3um, 0.6um, 1.1um, 1.9um, 2.5um, 3.0um, 3.6um, 4.2um, 4.7um or 5um higher than the height of the driving electrode 1101 .

[0057] Furthermore, the driving electrode 1101 may be a single-layer metal structure or a multi-layer metal structure. The materials of the driving electrode 1101 and the device electrode 1301 may be the same or different. In this embodiment, the material of the driving electrode 1101 may include metals such as indium (In), tin (Sn), gold (Au), or alloys containing the above metals.

[0058] In this embodiment, the driving backplane 110 may include: a printed circuit board (PCB) driving backplane, a low temperature polysilicon (LTPS) driving backplane, a complementary metal oxide semiconductor (CMOS) driving backplane, and an indium gallium zinc oxide (IGZO) driving backplane.

[0059] For further information, please refer to Figure 4 The light emitting device 130 includes a first light emitting device 130a, a second light emitting device 130b, and a third light emitting device 130c for emitting light of different colors. For example, the first light emitting device 130a may be a red light emitting device, the second light emitting device 130b may be a green light emitting device, and the third light emitting device 130c may be a blue light emitting device. Preferably, the first light emitting device 130a may be a gallium arsenide-based light emitting diode, and the second light emitting device 130b and the third light emitting device 130c may be gallium nitride-based light emitting diodes.

[0060] Based on the same inventive concept, this embodiment also provides a method for manufacturing a display panel, which is used to manufacture the display panel 10 described in the above embodiment. Figure 5 and Figure 6 ,in, Figure 5 The flowchart of the method for manufacturing a display panel provided in this embodiment is illustrated. Figure 6 Example Figure 5 The process flow chart corresponding to the method in Figure 5 and Figure 6 The manufacturing method of the display panel provided in this embodiment is described in detail.

[0061] Step S10: providing a driving backplane 110.

[0062] A driving electrode 1101 is disposed on one side of the driving backplane 110 . At least one driving electrode 1101 is distributed on the driving backplane 110 . When there are multiple driving electrodes 1101 , the driving electrodes 1101 are distributed in an array on the driving backplane 110 , and adjacent driving electrodes 1101 are isolated.

[0063] The driving backplane 110 can be one of a printed circuit driving backplane, a low temperature polysilicon driving backplane, a complementary metal oxide semiconductor driving backplane or an indium gallium zinc oxide driving backplane.

[0064] Step S20 , forming a light absorbing material layer covering the driving electrode on the side of the driving backplane 110 where the driving electrode 1101 is formed.

[0065] Exemplarily, black silicone material can be coated on one side of the driving electrode 1101 on the driving backplane 110 to form a light absorbing material layer 120' with a film height higher than that of the driving electrode 1101 in a direction perpendicular to the driving backplane 110, that is, the formed light absorbing material layer 120' can cover the driving electrode 1101.

[0066] In step S30 , the light absorbing material layer 120 ′ on the driving electrode 1101 is patterned to expose the driving electrode 1101 , thereby obtaining the light absorbing layer 120 around the driving electrode 1101 .

[0067] The light absorption layer 120 is located around the driving electrode 1101 , and the orthographic projection of the light absorption layer 120 on the driving backplane 110 and the orthographic projection of the driving electrode 1101 on the driving backplane 110 at least partially do not overlap.

[0068] For example, please refer to Figure 7 As shown in the process flow chart, step S30 can be implemented in the following manner.

[0069] First, a photoresist layer 200 is coated on the light absorbing material layer 120 ′.

[0070] Next, the photoresist in the area corresponding to the driving electrode 1101 is removed by exposure and development to form a photoresist opening 210 corresponding to the driving electrode 1101 .

[0071] Then, the light absorbing material layer 120 ′ corresponding to the position of the photoresist opening 210 is removed by etching to expose the driving electrode 1101 .

[0072] After the light absorbing material layer 120 ′ is removed as described above, in the direction perpendicular to the driving backplane 110 , the film thickness of the light absorbing material layer 120 ′ is higher than the height of the driving electrode 1101 .

[0073] Finally, the remaining photoresist layer 200 is removed to obtain the light absorption layer 120 located around the driving electrode 1101 .

[0074] Step S40, transfer the light emitting device 130 to the side of the driving backplane 110 where the driving electrode 1101 is set, make the side of the light emitting device body 1302 in the light emitting device 130 where the device electrode 1301 is set adhere to the light absorbing layer 120, and then electrically connect the device electrode 1301 with the driving electrode 1101.

[0075] In this embodiment, after the light-emitting device 130 is transferred to the side of the driving backplane 110 where the driving electrode 1101 is set and the device electrode 1301 of the light-emitting device 130 is aligned with the driving electrode 1101 on the driving backplane 110, the side of the light-emitting device body 1302 where the device electrode 1301 is set will be bonded to the light-absorbing layer 120, thereby increasing the ability of the light-emitting device 130 to adhere to the driving backplane 110, improving the transfer yield, and avoiding the problem of reduced transfer yield due to the relative position movement of the light-emitting device 130 and the driving backplane 110 during the transfer process.

[0076] Exemplarily, step S40 may be implemented in the following manner.

[0077] First, the light emitting device 130 is transferred to the side of the driving backplane 110 where the driving electrode 1101 is provided;

[0078] Next, the device electrode 1301 of the light emitting device 130 is aligned with the driving electrode 1101 on the driving backplane 110 , so that the side of the light emitting device body 1302 where the device electrode 1301 is disposed is bonded to the light absorbing layer 120 .

[0079] Then, the device electrode 1301 and the driving electrode 1101 are subjected to heating and pressure treatment to electrically connect the device electrode 1301 and the driving electrode 1101.

[0080] In this embodiment, the device electrode 1301 and the driving electrode 1101 may be connected by solder bonding or by anisotropic conductive film bonding.

[0081] In the related art, the light absorbing layer 120 is manufactured after the light emitting device 130 and the driving backplane 110 are bonded. For example, a black liquid light absorbing material can be sprayed between the light emitting devices 130, and the black liquid light absorbing material can be spread all over the screen in a self-leveling manner. However, since the height of the light emitting device is less than 10um, the black liquid light absorbing material can be easily siphoned to the light emitting surface of the light emitting device, resulting in that it is difficult for the light emitted by the light emitting device to pass through the light absorbing material located on the light emitting surface, resulting in dark spots. Compared with the related art, the manufacturing method provided in this embodiment can manufacture the light absorbing layer 120 on a large area on the driving backplane 110 before the light emitting device 130 and the driving backplane 110 are bonded, thereby improving the processing efficiency of the light absorbing layer 120, and at the same time, it can prevent the black liquid light absorbing material used to manufacture the light absorbing layer 120 from overflowing to the light emitting surface of the light emitting device 130 and affecting the display effect of the display panel. In addition, the surface viscosity of the light absorbing layer 120 can improve the ability of the light emitting device 130 to adhere to the driving backplane 110, improve the transfer yield, and improve the manufacturing yield of the display panel.

[0082] The embodiment of the present application provides a display panel and a method for manufacturing the display panel. In the display panel, the light absorbing layer is located on the side of the driving backplane where the driving electrode is set and on the peripheral side of the driving electrode, the device electrode is electrically connected to the driving electrode, and the side of the light emitting device body where the device electrode is set is bonded to the light absorbing layer. With such a design, the side of the light emitting device body where the device electrode is set can be bonded to the light absorbing layer, which can improve the ability of the light emitting device to attach to the driving backplane, improve the transfer yield, and improve the manufacturing yield of the display panel.

[0083] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A display panel, characterized in that: The display panel comprises: A driving backplane, wherein one side of the driving backplane is provided with driving electrodes, and adjacent driving electrodes are isolated; A light absorbing layer, the light absorbing layer is located on a side of the driving back plate where the driving electrode is disposed, and is located around the driving electrode; A light emitting device comprises a light emitting device body and a device electrode arranged on one side of the light emitting device body, wherein the device electrode is electrically connected to the driving electrode, and the side of the light emitting device body where the device electrode is arranged is bonded to the light absorbing layer.

2. The display panel according to claim 1, wherein: In a direction perpendicular to the driving backplane, the film height of the light absorbing layer is higher than the height of the driving electrode; In a direction perpendicular to the driving backplane, the total height of the driving electrode and the device electrode after being electrically connected is the same as the film height of the light absorbing layer.

3. The display panel according to claim 1, wherein: At least part of the driving electrodes is in contact with the light absorbing layer; Preferably, at least part of the device electrodes are in contact with the light absorbing layer.

4. The display panel according to claim 1, wherein: The light absorbing layer is a viscous light absorbing material layer, and the material of the light absorbing layer includes black organic silicon material; Preferably, in a direction perpendicular to the driving backplane, a film height of the light absorbing layer is 0.1 um to 5 um higher than a height of the driving electrode.

5. The display panel according to any one of claims 1 to 4, characterized in that: The driving electrode comprises at least one layer of metal; The material of the driving electrode includes indium, tin, gold or alloy; Preferably, the driving backplane includes: a printed circuit driving backplane, a low temperature polysilicon driving backplane, a complementary metal oxide semiconductor driving backplane and an indium gallium zinc oxide driving backplane.

6. The display panel according to any one of claims 1 to 4, characterized in that: The light emitting device comprises a first light emitting device, a second light emitting device and a third light emitting device for emitting light of different colors; Preferably, the first light emitting device is a red light emitting device, the second light emitting device is a green light emitting device, and the third light emitting device is a blue light emitting device; Preferably, the first light emitting device is a gallium arsenide-based light emitting diode, and the second light emitting device and the third light emitting device are gallium nitride-based light emitting diodes.

7. A method for manufacturing a display panel, characterized in that: The method comprises: Providing a driving backplane, wherein one side of the driving backplane is provided with driving electrodes, and adjacent driving electrodes are isolated; A light absorbing material layer covering the driving electrode is formed on a side of the driving backplane where the driving electrode is provided; Patterning the light absorbing material layer on the driving electrode to expose the driving electrode, thereby obtaining a light absorbing layer located around the driving electrode; The light emitting device is transferred to the side of the driving backplane where the driving electrode is arranged, so that the side of the light emitting device body where the device electrode is arranged in the light emitting device is bonded to the light absorbing layer, and then the device electrode is electrically connected to the driving electrode.

8. The method according to claim 7, characterized in that: The step of manufacturing a light absorbing material layer covering the driving electrode on a side of the driving backplane where the driving electrode is arranged comprises: A black organic silicon material is coated on one side of the driving backplane where the driving electrode is arranged, and a light absorbing material layer whose film height is higher than that of the driving electrode is formed in a direction perpendicular to the driving backplane.

9. The method according to claim 7, characterized in that: The step of patterning the light absorbing material layer on the driving electrode to expose the driving electrode and obtain the light absorbing layer on the peripheral side of the driving electrode comprises: Coating a photoresist layer on the light absorbing material layer, and removing the photoresist in the area corresponding to the driving electrode by exposure and development to form a photoresist opening corresponding to the driving electrode; The light absorbing material layer corresponding to the photoresist opening position is removed by etching to expose the driving electrode, and then the remaining photoresist layer is removed to obtain a light absorbing layer arranged around the driving electrode.

10. The method according to any one of claims 7 to 9, characterized in that: The step of transferring the light emitting device to the side of the driving backplane where the driving electrode is arranged, bonding the side of the light emitting device body where the device electrode is arranged to the light absorbing layer, and then electrically connecting the device electrode to the driving electrode comprises: Transferring the light-emitting device to the side of the driving backplane where the driving electrode is provided, and aligning the device electrode of the light-emitting device with the driving electrode on the driving backplane, so that the side of the light-emitting device body in the light-emitting device where the device electrode is provided is bonded to the light-absorbing layer; The device electrode and the driving electrode are subjected to heating and pressure treatment to electrically connect the device electrode and the driving electrode.

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