Film forming apparatus

Abstract

The invention provides a film forming apparatus, which comprises a processing container, a table top arranged in the processing container in a liftable manner, a shower head facing the table top and having a plurality of air holes, and a lifting mechanism for lifting the table top during film forming and forming a processing space between the shower head and the table top, and a measuring unit for measuring the gap between the shower head and the table top.

Description

Technical Field

[0001] The present invention relates to a film forming device. Background Art

[0002] For example, Patent Document 1 proposes a substrate processing device having a lifting table in a processing container, a component facing the table and forming a processing space with the table, a gas supply unit for supplying raw material gas and reaction gas into the processing container, and a pressure regulating valve with an adjustable opening. Adjustment of the gap between the component forming the processing space and the table has an impact on the process performed in the processing space.

[0003] [Prior art literature]

[0004] [Patent Literature]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2020-200510 Summary of the invention

[0006] [Problems to be solved by the invention]

[0007] The invention provides a film forming device which can accurately measure the gap between a shower head and a table which form a processing space.

[0008]

Methods to solve the problem

[0009] According to one embodiment of the present invention, there is provided a film forming device comprising: a processing container, a table which can be raised and lowered in the processing container, a shower head facing the table and having a plurality of air holes, a lifting mechanism which raises the table during film formation to form a processing space between the shower head and the table, and a measuring unit which measures the gap between the shower head and the table.

[0010] [Effects of the invention]

[0011] According to one aspect, the gap between the shower head and the table forming the processing space can be accurately measured. BRIEF DESCRIPTION OF THE DRAWINGS

[0012]

Figure 1

[0013]

Figure 2

[0014]

Figure 3

[0015]

Figure 4

[0016]

Figure 5

[0017] Hereinafter, the embodiment of the present invention will be described with reference to the accompanying drawings. In each of the drawings, the same components are given the same reference numerals, and repeated descriptions may be omitted.

[0018] In this specification, the directions of parallel, right angle, perpendicular intersection, horizontal, vertical, up and down, left and right, etc., are allowed to have a degree of deviation that does not impair the effect of the embodiment. The shape of the angle is not limited to a right angle, and can be arcuate with a rounded arc, or chamfered. Parallel, right angle, perpendicular intersection, horizontal, vertical, round, and consistent may include approximately parallel, approximately right angle, approximately perpendicular intersection, approximately horizontal, approximately vertical, approximately round, and approximately consistent.

[0019] [Configuration Example of Film Forming Apparatus]

[0020] Regarding the film forming apparatus 100 according to this embodiment, Figure 1 Provide explanation. Figure 1 This is an example of a schematic cross-sectional view of the film forming apparatus 100 according to the present embodiment.

[0021] The film forming apparatus 100 is an apparatus that sequentially supplies a raw material gas and a reaction gas to a substrate W such as a wafer to form a desired film on the surface of the substrate W. For example, as an example of a desired film, the film forming apparatus 100 supplies TiCl4 gas as a raw material gas and NH3 gas as a reaction gas to form a TiN film as a metal-containing film on the surface of the substrate W.

[0022] like Figure 1 As shown, the film forming apparatus 100 includes a processing container 1, a table (substrate mounting table) 2, a shower head 3, an exhaust unit 4, a processing gas supply unit 5, and a control device 6. The processing container 1 is made of metal such as aluminum and has a substantially cylindrical shape. A transport inlet and outlet 11 for carrying in or out a substrate W is formed on the side wall of the processing container 1, and the transport inlet and outlet 11 can be opened and closed by a gate valve 12.

[0023] An annular exhaust duct 13 having a rectangular cross section is provided on the main body of the processing container 1. A slit 13a is formed along the inner circumference of the exhaust duct 13. In addition, an exhaust port 13b is formed on the outer wall of the exhaust duct 13. A top wall 14 is provided on the upper surface of the exhaust duct 13 in such a manner as to block the upper opening of the processing container 1. A sealing ring 15 is provided between the top wall 14 and the exhaust duct 13, and the inside of the processing container 1 is hermetically sealed. The partition component 16 separates the interior of the processing container 1 from top to bottom when the table 2 (and the outer ring 22) rises to the processing position described later.

[0024] The table 2 supports the substrate W horizontally in the processing container 1. The table 2 is in the shape of a circular plate corresponding to the size of the substrate W, and is supported by a supporting member 23. The table 2 is made of a ceramic material such as aluminum nitride (AlN) or a metal material such as an aluminum or nickel-based alloy, and a heater 21 for heating the substrate W is embedded inside. The heater 21 is powered by a heater power supply (not shown) to generate heat. Then, the output of the heater 21 is controlled by a temperature signal from a thermocouple (not shown) provided near the substrate mounting surface on the upper surface of the table 2, thereby controlling the substrate W to a specified temperature. The heater 21 is an example of a heating portion of the table 2. On the table 2, in the peripheral area of ​​the substrate mounting surface, an outer ring 22 made of ceramic such as alumina is provided in a manner covering the side of the table 2.

[0025] The support member 23 extends from the center of the bottom surface of the table 2 through the hole formed on the bottom wall of the processing container 1 to the bottom of the processing container 1, and its lower end is connected to the lifting mechanism 24. Figure 1 The processing position indicated by the solid line and the transport position indicated by the double-dashed line below the processing position where the substrate W can be transported can be raised and lowered. In addition, an edge portion 25 is installed below the processing container 1 of the support member 23, and a bellows 26 is provided between the bottom surface of the processing container 1 and the edge portion 25 to separate the atmosphere in the processing container 1 from the external air and to extend and retract with the lifting and lowering action of the table 2.

[0026] Three (only two are shown in the figure) substrate support pins 27 are provided near the bottom surface of the processing container 1 so as to protrude upward from the lifting plate 27a. The substrate support pins 27 are movable up and down through the lifting plate 27a by the lifting mechanism 28 provided below the processing container 1, and are inserted into the through holes 2a provided on the table 2 at the transfer position so as to protrude relative to the upper surface of the table 2. By lifting and lowering the substrate support pins 27 in this way, the substrate W is transferred between the substrate transfer mechanism (not shown) and the table 2.

[0027] The shower head 3 supplies the processing gas in the processing container 1 in a spraying manner. The shower head 3 is made of metal, faces the table 2, and has approximately the same diameter as the table 2. The shower head 3 includes a main body 31 fixed to the top wall 14 of the processing container 1, and a shower plate 32 connected below the main body 31. A gas diffusion space 33 is formed between the main body 31 and the shower plate 32, and a gas inlet hole 36 is provided in the gas diffusion space 33 in a manner that passes through the center of the main body 31 and the top wall 14 of the processing container 1. A plurality of air holes 35 are formed on the flat surface on the central side of the shower plate 32. A protrusion 34 protruding in a circular ring shape toward the table 2 side is formed on the outer periphery of the central area where the plurality of air holes 35 are formed.

[0028] The table 2 is set to be able to rise and fall in the processing container 1, and the lifting mechanism 24 raises the table 2 to the processing position during film formation. As a result, a processing space 37 is formed between the shower head 3 and the table 2. That is, when the table 2 is in the processing position during film formation, the processing space 37 is formed between the shower plate 32 and the table 2, and the protrusion 34 is close to the upper surface of the table 2 and the outer ring 22, forming a circular ring-shaped gap 38. The gap (interval, distance) G between the shower head 3 (the protrusion 34 of the shower plate 32) and the table 2 when the table 2 is in the processing position is measured by the measuring unit A. When the table 2 is in the processing position during film formation, the gap G measured by the measuring unit A is, for example, about 3 mm.

[0029] The measuring unit A includes an eddy current sensor 60 provided on the shower head 3 (the protruding portion 34 of the shower plate 32) and a mesh electrode 20 provided on the table 2 (see FIG. Figure 1 , Figure 2 (a)). The eddy current sensor 60 is covered by a covering member 61. The covering member 61 is an insulator and covers at least the side surface of the eddy current sensor 60. In addition, there is an exhaust pipe 45 for vacuum exhausting the space around the eddy current sensor 60 in the shower head 3. The details of the measuring part A will be described later.

[0030] The exhaust section 4 exhausts the interior of the processing container 1. The exhaust section 4 has an exhaust pipe 41 connected to the exhaust port 13b of the exhaust pipe 13, an APC (automatic pressure controller) valve 42, an opening and closing valve 43, and a vacuum pump 44. One end of the exhaust pipe 41 is connected to the exhaust port 13b of the exhaust pipe 13, and the other end is connected to the suction port of the vacuum pump 44. Between the exhaust pipe 13 and the vacuum pump 44, an APC valve 42 and an opening and closing valve 43 are provided in sequence from the upstream side. The APC valve 42 adjusts the conductance of the exhaust path and adjusts the pressure of the processing space 37. The opening and closing valve 43 switches the exhaust pipe 41 on and off. During processing, the partition component 16 and the table 2 (outer ring 22) divide the interior of the processing container 1 into an upper space including the processing space 37 and a lower space on the back side of the table 2. Thus, the gas in the processing space 37 passes through the annular gap 38 and the slit 13a to reach the annular space inside the exhaust pipe 13, and is exhausted from the exhaust port 13b of the exhaust pipe 13 through the exhaust pipe 41 by the vacuum pump 44 of the exhaust unit 4. In addition, the lower space is formed into a cleaning atmosphere by a cleaning gas supply mechanism (not shown). Therefore, the gas in the processing space 37 does not flow into the lower space.

[0031] The film forming apparatus 100 further includes an exhaust mechanism 7 for vacuum exhausting the space around the eddy current sensor 60 in the shower head 3. The exhaust mechanism 7 includes an exhaust pipe 45 ( Figure 1 , Figure 3Reference). The exhaust section 4 has an APC valve 46 and an opening and closing valve 47 connected to the exhaust pipe 45. The exhaust pipe 45 is connected to the suction port of the vacuum pump 44. The APC valve 46 and the opening and closing valve 47 are provided between the exhaust pipe 45 and the vacuum pump 44 in order from the upstream side. The APC valve 46 adjusts the conductance of the exhaust path and adjusts the pressure of the gap around the eddy current sensor 60. The opening and closing valve 47 switches the opening and closing of the exhaust pipe 45. The gas in the gap around the eddy current sensor 60 passes through the exhaust pipe 45 and is exhausted by the vacuum pump 44.

[0032] The processing gas supply unit 5 has a raw gas supply line L1, a reaction gas supply line L2, a cleaning gas supply line L3 and a confluence pipe L4. The confluence pipe L4 is connected to the gas inlet hole 36. The raw gas supply line L1 extends from the raw gas supply source 51 and is connected to the confluence pipe L4. The raw gas supply line L1 is provided with a mass flow controller (not shown) and an on-off valve 54 in sequence from the raw gas supply source 51 side. The mass flow controller controls the flow rate of the raw gas flowing in the raw gas supply line L1. The on-off valve V1 switches the supply and stop of the raw gas when the ALD process is switched. A buffer box (not shown) may be provided between the mass flow controller and the on-off valve 54. The buffer box temporarily stores the raw gas and supplies the necessary raw gas in a short time.

[0033] The reaction gas supply line L2 extends from the reaction gas supply source 52 and is connected to the confluence pipe L4. The reaction gas supply line L2 is provided with a mass flow controller (not shown) and an on-off valve 55 in sequence from the reaction gas supply source 52 side. The mass flow controller controls the flow rate of the reaction gas flowing in the reaction gas supply line L2. The on-off valve 55 switches the supply and stop of the reaction gas when the ALD process is performed. A buffer box (not shown) may be provided between the mass flow controller and the on-off valve 55. The buffer box temporarily stores the reaction gas and supplies the necessary reaction gas in a short time.

[0034] The cleaning gas supply line L3 extends from the cleaning gas supply source 53 and is connected to the confluence pipe L4. The cleaning gas supply line L3 is provided with a mass flow controller (not shown) and an on-off valve 56 in sequence from the cleaning gas supply line L3 side. The mass flow controller controls the flow rate of the cleaning gas flowing in the cleaning gas supply line L3. The on-off valve 56 switches the supply and stop of the cleaning gas during the ALD process. A buffer box (not shown) may be provided between the mass flow controller and the on-off valve 56. The buffer box temporarily stores the cleaning gas and supplies the necessary reaction gas in a short time.

[0035] Thus, N2 gas is supplied to the confluence pipe L4 side through the cleaning gas supply line L3. The cleaning gas supply line L3 continuously supplies N2 gas during film formation based on the ALD method, and acts as a carrier gas for the raw material gas. A hole (not shown) is provided between the on-off valve 56 and the confluence pipe L4 to suppress the backflow of the cleaning gas in the cleaning gas supply line L3.

[0036] The control device 6 controls the operation of each part of the film forming device 100. The control device 6 has a CPU (central processing unit), a ROM (read-only memory) and a RAM (random access memory). The CPU executes the desired processing according to the scheme stored in the storage area of ​​the RAM, etc. The control information of the device for the process conditions is set in the scheme. The control information can be, for example, gas flow, pressure, temperature, process time. In addition, the scheme and the program used by the control device 6 can be stored in, for example, a hard disk or a semiconductor memory. In addition, the scheme, etc. can be set to be read out at a specified location in a state where it is contained in a storage medium that can be read by a portable computer such as a CD-ROM or a DVD.

[0037] [Measurement Department]

[0038] Next, regarding the measurement unit A, refer to Figure 2 Provide explanation. Figure 2 FIG. 1 is a diagram showing an example of a measuring unit A according to an embodiment of the present invention. Figure 1 As shown, by raising and lowering the table 2, the gap G between the shower head 3 and the table 2 during film formation can be reduced, thereby improving the uniformity of resistivity and film thickness and achieving good coverage during film formation. However, the more the gap G is controlled to be reduced, the greater the influence of a small control error of the gap G on the process (substrate processing).

[0039] Therefore, in the film forming apparatus 100 of the present invention, the gap G is accurately measured by the measuring unit A. Figure 2 As shown in (a), the measuring part A has an eddy current sensor 60 and a mesh electrode 20. The eddy current sensor 60 is provided on a circular protrusion 34 protruding from the shower plate 32 toward the table 2, and detects the mesh electrode 20 in the table 2. The eddy current sensor 60 has a coil, which generates a high-frequency magnetic field. If there is a measuring object ( Figure 2 The distance D is measured by electromagnetic induction through the passage of magnetic flux on the mesh electrode 20 and the flow of eddy current in the vertical direction. The distance D is the distance between the detection surface 60a of the eddy current sensor 60 and the surface of the mesh electrode 20, thereby accurately measuring the gap G between the shower head 3 and the table 2.

[0040] The eddy current sensor 60 is configured so as not to obstruct the flow of the eddy current sensor from the plurality of air holes 35 ( Figure 1The eddy current sensor 60 is configured to be arranged in a manner that is consistent with the flow F of the gas discharged from the plurality of air holes 35. Therefore, the side surface on the inner diameter side of the protrusion 34 is a tapered surface 32a that expands outward, and the eddy current sensor 60 is arranged on the outer peripheral side of the tapered surface 32a. As a result, the detection surface 60a of the eddy current sensor 60 is oriented in a direction that is substantially the same as the direction of the flow F of the gas discharged from the plurality of air holes 35, and a gas flow F can be generated in a direction away from the detection surface 60a of the eddy current sensor 60. As a result, film formation on the detection surface 60a and reduction in the measurement function of the eddy current sensor 60 can be prevented.

[0041] In addition, for example, three eddy current sensors 60 may be provided at intervals of 120° in the circumferential direction of the annular protrusion 34. The number of eddy current sensors 60 may be single or multiple, but preferably three or more. By providing three or more eddy current sensors 60 on the protrusion 34, the difference in the measured values ​​of the gap G at three or more locations is obtained, thereby enabling the tilt of the table top 2 to be measured with better accuracy.

[0042] The eddy current sensor 60 is provided on the shower head 3, and is not arranged on the table 2. If the heat resistance of the eddy current sensor 60 is considered, the upper limit of the temperature at which the eddy current sensor 60 can be properly used is about 200°C. During film formation, the table 2 is heated by the heater 21 to above 400°C. Therefore, the eddy current sensor 60 cannot be on the table 2 side.

[0043] Furthermore, if the eddy current sensor 60 is disposed on the table 2, when a film is formed on the substrate W on the table 2, the eddy current sensor 60 will also be formed with a film, and the detection function of the eddy current sensor 60 will be reduced, and the gap G cannot be accurately measured. Furthermore, when the film on the eddy current sensor 60 is removed by cleaning, the eddy current sensor 60 is exposed to the cleaning gas, and the eddy current sensor 60 is damaged. Therefore, the eddy current sensor 60 cannot be disposed on the table 2 side.

[0044] The film forming apparatus 100 of the present invention configures the eddy current sensor 60 on the shower head 3, and does not configure it on the table 2 side. Therefore, the eddy current sensor 60 can be used in an environment below 200°C. In addition, the eddy current sensor 60 is configured: on the shower head 3 side away from the table 2 so that no film is formed, and on the outer peripheral side of the tapered surface 32a so that the direction of the flow F of the gas is away from the detection surface 60a of the eddy current sensor 60. As a result, the detection function of the eddy current sensor 60 can be maintained without being reduced, and the gap G can be accurately measured without being affected by the thermal expansion and contraction of the component on which the eddy current sensor 60 is configured and the instrument mechanical error of the component.

[0045] The eddy current sensor 60 continuously monitors the state of the gap G. Thus, the tilt of the table 2 is detected, and thus, when abnormalities such as deterioration and breakage of the belt used for power transmission of the lifting mechanism 24, loosening of the locking nut of the linear guide, and loosening of various other screws occur, they can be discovered at an early stage. Thus, when the table 2 tilts above the reference, it is determined to be abnormal, and the processing of the substrate W is stopped, thereby preventing the substrate W from being processed further and reducing the generation of defective substrates W that have to be discarded.

[0046] In addition, there are individual differences in the position of the mesh electrode 20 in the table 2 when the eddy current sensor 60 is mounted on the shower head 3. However, the individual differences can be offset by performing zero point adjustment of the eddy current sensor 60 when adjusting the gap G.

[0047] The mesh electrode 20 is an example of a metal component that faces the eddy current sensor 60 and is disposed on the side of the table 2. The metal electrode disposed facing the eddy current sensor 60 is not limited to the mesh electrode 20. In addition to the mesh electrode 20, a plate electrode may be buried in the table 2. The metal component may be a metal film formed on the surface of the table 2. The outer ring 22 is disposed at a position facing the eddy current sensor 60, and the metal component may be a mesh electrode, a plate electrode buried in the outer ring 22, or a metal film formed on the surface of the outer ring 22. Here, when the metal component is a metal film, the metal film needs to be a film that is resistant to clean gas. Since the outer ring 22 is easier to replace than the table 2, when you want to replace the metal component, it is preferred to set the metal component on the outer ring 22 rather than the table 2.

[0048] As described above, the metal member is provided at least at a position of the table 2 or the outer ring 22 that faces the eddy current sensor 60. The metal member can be formed of, for example, molybdenum or other metals.

[0049] The mesh electrode 20 or plate-shaped electrode buried in the table 2 or the outer ring 22 may be arranged on the entire surface of the table 2, etc., or may be arranged at a position of the table 2, etc. facing the eddy current sensor 60, instead of being arranged on the entire surface. The mesh electrode 20 or plate-shaped electrode may also be used as an RF electrode to which RF (high frequency) power is applied. In this case, it is preferred to arrange the mesh electrode 20 or plate-shaped electrode on the entire surface of the table 2. When RF power is not supplied to the mesh electrode 20 or plate-shaped electrode, the mesh electrode 20 or plate-shaped electrode may be used to measure the gap G by the eddy current sensor 60.

[0050] The mesh electrode 20 etc. can also be used as a heater line. In this case, the mesh electrode 20 etc. is preferably arranged on the entire surface of the table 2. When the mesh electrode 20 etc. is not supplied with a voltage for heating by the heater, the mesh electrode 20 etc. can be used to measure the gap G by the eddy current sensor 60.

[0051] The eddy current sensor 60 is covered by a covering member 61. The covering member 61 is formed of ceramics such as Al2O3, AlN, and quartz (SiO2). By covering the side of the eddy current sensor 60 with the ceramic covering member 61, it is possible to prevent gas from entering from the gap between the eddy current sensor 60 and the shower plate 32, and to avoid turbulence of the gas flow F around the eddy current sensor 60.

[0052] When there are metal parts around the side of the eddy current sensor 60, it may cause false detection. Therefore, in the past, a space was provided around the eddy current sensor 60 to prevent false detection. However, when a space is provided around the eddy current sensor 60 arranged on the protrusion 34, the gas flow F will be disturbed, and the eddy current sensor 60 will be exposed to the raw gas, reaction gas, and cleaning gas, so it is not preferred.

[0053] Therefore, by covering the side of the eddy current sensor 60 with the ceramic covering member 61, the eddy current sensor 60 can avoid detecting the metal of the shower plate 32 on the side of the eddy current sensor 60. In this way, false detection is prevented, and the gap G can be accurately measured by detecting the metal of the mesh electrode 20 from the detection surface 60a of the eddy current sensor 60.

[0054] As mentioned above, the covering member 61 is not provided around the eddy current sensor 60, and a space is provided between the eddy current sensor 60 and the shower plate 32, which can also prevent the detection of the metal of the shower plate 32 on the side of the eddy current sensor 60. However, at this time, gas enters the space around the eddy current sensor 60, and the eddy current sensor 60 forms a film. When the film formed on the eddy current sensor 60 is removed by the cleaning gas, the eddy current sensor 60 will be damaged.

[0055] Therefore, by covering the eddy current sensor 60 with the covering member 61, it is possible to prevent false detection and prevent film formation on the eddy current sensor 60. Furthermore, by providing the covering member 61 in a manner covering the eddy current sensor 60, the influence of radiant heat from the table 2 to the eddy current sensor 60 is suppressed, and the temperature rise of the eddy current sensor 60 can be reduced.

[0056] The lower surface of the cover member 61 and the protruding surface 34a of the protruding portion 34 of the shower plate 32 are arranged in the same plane. In addition, the detection surface 60a of the eddy current sensor 60 may be in the same plane as the protruding surface 34a of the protruding portion 34, or may be retracted further inward (outer side) of the protruding surface 34a.

[0057] like Figure 2As shown in (b), between the tapered surface 32a and the detection surface 60a of the eddy current sensor 60, there may be an eave 32b for preventing gas from adhering to the eddy current sensor 60. The eave 32b may be provided on the inner diameter side of the eddy current sensor 60 of the protrusion 34 and on the outer peripheral side of the tapered surface 32a, all around the circumference.

[0058] [Configuration example of eddy current sensor and its peripherals]

[0059] Next, use Figure 3 Further description is given of an example of the configuration of the eddy current sensor 60 and its surroundings according to the embodiment. Figure 3 As shown, not only the side surface but also the detection surface 60a of the eddy current sensor 60 disposed on the protrusion 34 may be covered by the covering member 61. Thus, film formation on the side surface and the detection surface 60a of the eddy current sensor 60 can be prevented.

[0060] The thickness T1 of the side portion of the covering member 61 is preferably 0.75 to 1.0 times or more of the diameter of the eddy current sensor. An appropriate thickness can be adopted according to the specifications of the eddy current sensor. The thickness T2 of the front end portion of the covering member 61 covering the detection surface 60a is thinner than the thickness T1 of the side portion, and can be 0.5 mm to 2.0 mm.

[0061] By placing the eddy current sensor 60 on the shower plate 32, the eddy current sensor 60 becomes a temperature singular point, and the processing space 37 ( Figure 1 The temperature distribution changes in the substrate W may affect the processing (film formation) of the substrate W. Therefore, the eddy current sensor 60 is preferably as small as possible. In addition, the smaller the eddy current sensor 60 is, the weaker the high-frequency magnetic field generated by the eddy current sensor 60 is, and the thickness T1 of the side of the covering member 61 can be thinner, which is preferred.

[0062] However, when the eddy current sensor 60 is miniaturized and the thickness T2 of the front end of the covering member 61 is made to be greater than 0.5 mm and less than 2.0 mm, the front end of the covering member 61 is thin and thus easily broken. In particular, the cable 67 connected to the eddy current sensor 60 needs to be wired to the atmosphere side. That is, the cable 67 of the eddy current sensor 60 is located in the atmospheric space. In contrast, the processing space 37 is a vacuum space. Therefore, when the front end of the covering member 61 screwed on the shower plate 32 by the screw 62 becomes a plate separating the atmosphere and the vacuum, the front end of the covering member 61 is likely to break due to the pressure difference between the atmosphere and the vacuum.

[0063] Therefore, in order to prevent the front end of the cover member 61 from being broken, a sealing ring 63 such as an O-ring is provided between the cable 67 and the eddy current sensor 60, so that the position separating the atmosphere and the vacuum is the sealing ring 63, thereby the atmospheric space extending from the cable 67 closes the eddy current sensor 60 and the cover member 61 side, so that the cover member 61 side is a vacuum zone. In addition, a sealing ring 64 is provided between the cover member 61 and the shower plate 32, and a sealing ring 65 is provided between the shower plate 32 and the main body 31, respectively, thereby suppressing the introduction of the raw material gas, the reaction gas, and the cleaning gas supplied to the processing space 37 and the gas diffusion space 33, and the introduction of these gases flowing near the slit 13a. Furthermore, by providing a sealing ring 66 between the main body 31 and the exhaust pipe 45, the mixing of the atmosphere around the eddy current sensor 60 and the cover member 61 is suppressed.

[0064] The eddy current sensor 60 and the cover member 61 are in a state of fluid isolation from the atmosphere and the processing space 37, but the eddy current sensor 60 and the cover member 61 are assembled in the atmosphere. Due to the residual atmosphere and the penetration of the atmosphere in the sealing ring, the atmosphere is mixed. When the processing space 37 is directly evacuated, the thinner front end of the cover member 61 may be damaged due to the differential pressure between the atmosphere around the eddy current sensor 60 and the cover member 61. Therefore, the vacuum pump 44 exhausts air from the exhaust pipe 45 to evacuate the gap around the eddy current sensor 60 and the cover member 61 in the shower head 3, thereby eliminating the differential pressure between the processing space 37 and the gap around the eddy current sensor 60 and the cover member 61, and suppressing the excessive load applied to the front end of the cover member 61.

[0065] For example, the exhaust volume is determined according to the cross-sectional area of ​​the exhaust pipe 45, and the exhaust volume from the exhaust pipe 45 and the exhaust volume from the exhaust pipe 41 ( Figure 1 The exhaust volume of the processing space 37 is adjusted to make the pressure in the processing space 37 and the pressure around the eddy current sensor 60 and the covering member 61 approximately the same pressure. For example, the conductance of the exhaust pipe 45 can be adjusted in such a way that the pressure in the processing space 37 and the pressure around the eddy current sensor 60 and the covering member 61 are approximately the same pressure. The opening of the APC valve 46 can also be adjusted in such a way that the pressure in the processing space 37 and the pressure around the eddy current sensor 60 and the covering member 61 are approximately the same pressure. In this way, it is possible to avoid the covering member 61 from being broken due to atmospheric pressure. In addition, the exhaust from the exhaust pipe 45 can use the vacuum pump 44, or a vacuum pump other than the vacuum pump 44.

[0066] [ALD device]

[0067] The film forming apparatus 100 described above is, for example, an ALD (atomic layer deposition) apparatus, and can perform film forming processing (substrate processing) using the ALD method. Figure 4 and Figure 5 , an example of a film forming process using the ALD method performed using the film forming apparatus 100 is described. Figure 4 It is a flowchart showing an example of the film forming process according to the embodiment. Figure 5 This is a flowchart showing an example of a film forming process using the ALD method according to the embodiment.

[0068] In step S1, a substrate W is loaded into the processing container 1 of the film forming apparatus 100. Specifically, the stage 2 heated to a predetermined temperature (for example, 300° C. to 700° C.) by the heater 21 is lowered to the transfer position ( Figure 1 The gate valve 12 is opened in a state (indicated by a double-dashed line in FIG. 1 ). Then, the substrate W is carried into the processing container 1 through the carrying port 11 by a carrying arm (not shown) and supported by the substrate supporting pins 27. When the carrying arm retreats from the carrying port 11, the gate valve 12 is closed. In addition, the substrate supporting pins 27 are lowered to place the substrate W on the table 2.

[0069] Next, in step S2, the control device 6 controls the lifting mechanism 24 to raise the table 2 to the processing position ( Figure 1 Thus, the interior of the processing container 1 is divided into an upper space on the surface (substrate placement surface) side of the table 2 including the processing space 37 and a lower space on the back side of the table 2 .

[0070] Next, in step S3, the substrate W on the table 2 is heated up, and the openings of the APC valves 42 and 46 are adjusted. That is, the substrate W on the table 2 is heated up to a specified temperature (e.g., 300°C to 700°C) by the heater 21. In addition, the control device 6 controls the exhaust unit 4 to adjust the inside of the processing container 1 to a specified vacuum degree. In addition, the control device 6 controls the exhaust unit 4 to adjust the pressure around the eddy current sensor 60 and the cover member 61 to be substantially the same as the pressure in the processing space 37.

[0071] Then, the control device 6 opens the on-off valve 56 of the processing gas supply unit 5 and closes the on-off valves 54 and 55. Thus, the cleaning gas is supplied from the cleaning gas supply source 53 through the cleaning gas supply line L3 and the confluence pipe L4 to the processing space 37, so that the pressure increases. In addition, the control device 6 adjusts the opening of the APC valve 42 based on the pressure sensor (not shown) that detects the pressure in the processing space 37, so that the pressure in the processing space 37 is the desired pressure. In addition, the opening of the APC valve 46 is adjusted so that the pressure around the eddy current sensor 60 and the pressure in the processing space 37 are substantially the same pressure.

[0072] Next, in step S4, substrate W processing is performed. Specifically, first Figure 5 In step S11, the control device 6 opens the on-off valve 54, and supplies the raw material gas from the raw material gas supply source 51 to the processing space 37 through the raw material gas supply line L1 and the converging pipe L4, exposing the raw material gas on the substrate W to form an atomic layer of the raw material gas on the substrate W.

[0073] Next, in step S12 , the control device 6 closes the on-off valve 54 , thereby exhausting the source gas in the processing space 37 by the cleaning gas supplied from the cleaning gas supply source 53 into the processing space 37 .

[0074] Next, in step S13, the control device 6 opens the on-off valve 55, and supplies the reaction gas from the reaction gas supply source 52 through the reaction gas supply line L2 and the confluence pipe L4 into the processing space 37, so that it reacts with the atomic layer of the raw material gas on the substrate W to form the desired film.

[0075] Next, in step S14 , the control device 6 closes the on-off valve 55 , thereby exhausting the reaction gas in the processing space 37 by the cleaning gas supplied from the cleaning gas supply source 53 into the processing space 37 .

[0076] In step S15, it is determined whether the processing of steps S11 to S14 has been performed a specified number of times. If it is determined that the processing of steps S11 to S14 has been performed a specified number of times, the processing of steps S11 to S14 is repeated. If it is determined that the processing of steps S11 to S14 has been performed a specified number of times, the processing ends. Figure 5 Substrate processing, return Figure 4 Step S4.

[0077] For example, when the raw material gas is TiCl4 gas, the reaction gas is NH3 gas, and the cleaning gas is N2 gas, a TiN film is formed on the substrate W. In addition, during the cleaning process, the reaction products (NH4Cl gas, HCl gas), the remaining TiCl4 gas, NH3 gas, etc. are exhausted.

[0078] Figure 4 In step S4, Figure 5 When the substrate processing is finished, enter Figure 4 In step S5, the control device 6 controls the lifting mechanism 24 to lower the table 2 to the transport position.

[0079] Next, in step S6, the substrate W is carried out from the processing container 1 of the film forming apparatus 100. Specifically, the substrate support pins 27 are raised, and the substrate W placed on the table 2 is lifted and supported by the substrate support pins 27. In addition, the gate valve 12 is opened. Next, the substrate W is carried out from the processing container 1 through the transport entrance 11 by a transport arm (not shown). When the transport arm retreats from the transport entrance 11, the gate valve 12 is closed. Through the above, the process of forming a desired film (for example, a TiN film) on the substrate W in the film forming apparatus 100 is completed.

[0080] As described above, the film forming apparatus 100 of the present embodiment performs film forming processing. At this time, the film forming apparatus 100 can accurately measure the gap G between the shower head 3 and the table 2 that form the processing space 37. Therefore, if the measured value of the gap G is within the allowable range based on the set value (target value), the substrate processing is directly performed, and if it is outside the allowable range, the substrate processing can be interrupted and the substrate W can be carried out. In addition, the inclination of the table 2 is calculated from the measured value of the gap G. If the calculated inclination of the table 2 is outside the allowable range, the inclination of the table 2 can be corrected in such a way that the inclination of the table 2 disappears, and the substrate processing can also be interrupted and the substrate W can be carried out.

[0081] It should be considered that the film forming apparatus involved in the embodiments disclosed this time is illustrative in all aspects and not restrictive. The embodiments may be deformed and improved in various forms without departing from the appended claims and their gist. The matters recorded in the above-mentioned multiple embodiments may also take other structures within the scope of non-contradiction, and may be combined within the scope of non-contradiction.

[0082] For example, in the above-mentioned embodiment, the film forming process based on the ALD method is exemplified, but the present invention can also be applied to various film forming processes such as the CVD method and the SFD (Sequential Flow Deposition) method.

[0083] This application claims the benefit of priority based on basic application No. 2022-101410 filed on June 23, 2022 in the Japan Patent Office, the entire contents of which are hereby incorporated by reference.

[0084] [Description of Reference Numerals]

[0085] 1. Processing container

[0086] 2 countertops

[0087] 3 sprinkler heads

[0088] 4 Exhaust

[0089] 5Processing gas supply unit

[0090] 6. Control Device

[0091] 7 Exhaust mechanism

[0092] 22 Outer Ring

[0093] 24 lifting mechanism

[0094] 32 Spray plate

[0095] 32a Conical surface

[0096] 34 protrusion

[0097] 34a protruding surface

[0098] 37 Processing Space

[0099] 41, 45 exhaust pipe

[0100] 42APC valve

[0101] 43 Open and close valve

[0102] 44 Vacuum pump

[0103] 60 Eddy Current Sensor

[0104] 100 film forming device

Claims

1. A film forming device, comprising: Processing containers, A tabletop is movably disposed in the processing container. The shower head faces the table and has a plurality of air holes. a lifting mechanism, which raises the table when forming a film, so that a processing space is formed between the shower head and the table, and A measuring unit measures a gap between the shower head and the table. 2 . The film forming apparatus according to claim 1 , wherein the measuring unit comprises an eddy current sensor provided on the shower head, and a metal member provided on the table or a peripheral member arranged on the periphery of the table. 3 . The film forming apparatus according to claim 2 , wherein the eddy current sensor is provided on a protrusion that protrudes in an annular shape on an outer peripheral surface of a region of the shower head where the plurality of air holes are formed.

4. The film forming device according to claim 3, wherein the inner diameter side surface of the protrusion is a tapered surface expanding outward, The eddy current sensor is arranged so that the direction of flow of the gas discharged from the plurality of gas holes through the tapered surface is away from the detection surface of the eddy current sensor. 5 . The film forming apparatus according to claim 4 , further comprising a flange for preventing gas from adhering to the eddy current sensor between the tapered surface and the eddy current sensor. 6 . The film forming apparatus according to claim 2 , wherein the metal member is a metal electrode provided at a position facing the eddy current sensor of the table or the peripheral member. 7 . The film forming device according to claim 6 , wherein the metal electrode is a mesh electrode or a plate electrode, and is embedded in the table or in the peripheral member. 8 . The film forming apparatus according to claim 6 , wherein the metal electrode is a metal film formed on a surface of the mesa or the peripheral member. 9 . The film forming apparatus according to claim 2 , comprising a covering member of an insulating body that covers at least a side surface of the eddy current sensor. 10 . The film forming apparatus according to claim 2 , further comprising an exhaust mechanism for vacuum exhausting a space around the eddy current sensor in the shower head. 11 . The film forming apparatus according to claim 1 , wherein the film forming apparatus is an atomic layer deposition apparatus.

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