Experimental simulation method for analyzing growth connection type and process of fault in basin

Abstract

The invention relates to the technical field of tectonic geology, sequence stratigraphy and fault oil and gas reservoir geological exploration, and discloses an experimental simulation method for analyzing the growth connection type and process of a fault in a basin. The method comprises the following steps: collecting three-dimensional seismic data of a research area, and carrying out fine seismic interpretation; drawing a plane fault distribution diagram of each layer; preliminarily identifying a target fault with a fault growth connection phenomenon in the research area; arranging fault displacement data of the target fault on the main marker bed along the trend, and drawing a trend displacement-fault displacement curve graph of the target fault to confirm fault growth connection points; analyzing the seismic section of the joint to judge the fault growth connection type; making a three-dimensional geologic model according to the target fault and surrounding stratum data to verify a fault growth connection type; segmental growth connection simulation experiments of different inclined faults under the existence of a pre-storage substrate are set, and the growth connection process is analyzed by comparing experimental results with actual conditions. The method can be widely applied to oil and gas field exploration and development production practice, and the market demand is wide.

Description

Technical Field

[0001] The invention relates to the field of structural geology, sequence stratigraphy and fault oil and gas reservoir geological exploration technology, and in particular to an experimental simulation method for analyzing fault growth connection types and processes in a basin. Background Art

[0002] Under the guidance of the isochronous stratigraphic framework, the segmented growth connection of faults has a controlling effect on the distribution of provenance and sand bodies, and also has a controlling effect on the development of micro-structural traps. In the exploration and development of oil and gas fields, faults play a structural role that has an important impact on the evolution of formations.

[0003] Fault growth is a dynamic process that goes through a continuous process of destruction → connection → re-destruction. Segmental growth was proposed by Segall et al. when studying the mechanism of discontinuous faults. It refers to the process in which a large number of normal faults with small displacements gradually interact with each other and grow segmentally to form a small number of larger faults as the remote stress increases.

[0004] Mature faults are connected after segmented growth. The growth connection modes include the same tilt, opposite tilt, and opposite tilt. The fault strike displacement-fault distance curve is one of the important methods to identify the segmented growth of faults and is the most widely used. The displacement-distance curve refers to the displacement change along the fault strike. It is usually used to describe the displacement gradient of the fault in order to study the formation and development process of the fault. In the process of segmented growth of faults, as the two faults gradually overlap, some energy is often consumed at the transition zone, and the fault distance increases slowly, resulting in a relatively small fault distance at the transition zone, so that the displacement-distance curve shows a high shape at both ends and a low shape in the middle. For segmented growth faults, the concave point position of the displacement-distance curve is the location of the segmented growth connection point.

[0005] Currently, the process for identifying growth connection patterns between faults and analyzing the growth connection process is not perfect. Summary of the invention

[0006] In order to solve the above technical problems, the present invention plans to analyze the formation process and formation environment of the target fault development growth connection pattern by elaborating on the process from collecting data to identifying the target fault growth connection position and growth connection type, and comparing the results obtained by setting controllable parameters in the physical simulation experiment with the actual situation.

[0007] The present invention adopts the following technical solution:

[0008] An experimental simulation method for analyzing fault growth connection types and processes in a basin includes the following steps:

[0009] S100 collects 3D seismic data in the study area and conducts detailed seismic interpretation;

[0010] Based on the S100 fine seismic interpretation, S200 draws the fault distribution map of each layer; preliminarily identifies the target faults where fault growth connection occurs in the study area;

[0011] S300, based on the preliminary determination of the target fault in S200, sorts out the strike displacement data of the target fault on the main marker layer, draws the strike displacement-fault displacement curve of the target fault to confirm the fault growth connection point;

[0012] S400 determines the fault growth connection type by analyzing the seismic profile at the connection point based on the fault growth connection point confirmed by S300;

[0013] S500, after confirming the connection type in S400, creates a three-dimensional geological model based on the target fault and surrounding stratum data to verify the fault growth connection type;

[0014] S600 sets up a simulation experiment of segmented growth and connection of faults with different inclinations under the pre-existing basement, and analyzes its growth and connection process by comparing the experimental results with the actual situation.

[0015] Specifically, the steps of fine seismic interpretation in S100 are as follows:

[0016] S110 collects regional seismic data, well data and core data in the study area;

[0017] According to the theory of sequence stratigraphy, S120 divides the well-seismic data that meet the requirements into sequences and establishes a high-precision isochronal stratigraphic framework:

[0018] S121 identifies stratigraphic unconformities and divides stratigraphic sequences based on geological interface markers in well-seismic data;

[0019] S122 uses the data of each single well and the seismic wavelet near the well to produce synthetic seismic records, calibrate the formation, and divide the main marker layers in the study area;

[0020] S123 uses single well data to draw a well-joint profile, matches it with the sequence stratigraphy divided by S121, and establishes a well-seismic joint profile seismic sequence;

[0021] S124 tracks and closes the seismic geological strata in the study area under the constraints of S122 and S123, completes the closure of the main strata and faults in the main survey line and the connecting survey line, and establishes an isochronous stratigraphic framework.

[0022] Specifically, the steps of drawing a plane fault distribution map and identifying a target fault in S200 are as follows:

[0023] On the basis of S100 fine seismic interpretation, according to the strike and cutting shape of the fault in each stratum, the overall planar distribution of the fault in the seismic data interpretation is obtained, and the planar fault distribution map of each layer is drawn. In the map, the middle of the fault is defined as the middle end and the two sides are the ends. It is observed whether there is overlap, end connection, and similar distance between faults with similar strikes, so as to preliminarily identify the target faults where fault growth connection occurs in the study area.

[0024] Specifically, the steps of drawing the strike displacement-fault throw curve diagram of the target fault and confirming the fault growth connection point in S300 are as follows:

[0025] S310 collects data: based on S100, along the strike of the target fault, select the fault distance value Y of the target fault on the main marker layer at equal intervals, where Y is a natural number; record the survey line number X where the fault distance value selected for the target fault is located, where X is a natural number; the survey line number and the fault distance value measured at each location must correspond;

[0026] S320 establishes a coordinate system: sets the survey line number where the fault distance value of the target fault is selected as the horizontal coordinate, and sets the selected fault distance data as the vertical coordinate;

[0027] S330: Input the recorded survey line number X and the corresponding fault throw value Y into the established coordinate system, generate along-strike displacement-fault throw points, and connect the along-strike displacement-fault throw points in sequence to generate a strike displacement-fault throw curve; the fault throw value represents the vertical displacement value of the fault in this stratum, so the concave point value of the strike displacement-fault throw curve is the growth connection point of the two target faults;

[0028] Specifically, the steps of analyzing the seismic profile at the connection to determine the fault growth connection type in S400 are as follows:

[0029] Based on the fault growth connection point confirmed in S300, S400 analyzes the seismic profile passing through the connection point and perpendicular to the fault strike, observes the dip relationship between the two target faults, and thus determines the fault growth connection type.

[0030] Specifically, the steps of making a three-dimensional geological model in S500 to verify the fault growth connection type are as follows:

[0031] Based on the S100 fine seismic interpretation, S500 collects data on the target fault and surrounding strata; the collected data is vectorized and imported into relevant software to create a three-dimensional geological model, thereby verifying the fault growth connection type.

[0032] Specifically, S600 is set up with a simulation experiment of segmented growth connection of faults with different inclinations under the pre-existing basement ( Figure 1 ) and compare it with the actual situation as follows:

[0033] Setting up a simulation experiment on segmented growth connection of faults with different dips under the pre-existing basement:

[0034] The S610 experimental model consists of two parts: a control module and an experimental module. The control module includes a computer, motors I and II. The experimental module uses a steel plate as the bottom and transparent glass plates A, B, baffles C, and D as the boundaries. Plates A, B, C, and D can be closely connected together to form a rectangular central area, and foam plates, rubber sheets, and plastic sheets are placed in the central area; A and B are parallel and fixed during the experiment, and C and D are respectively advanced or retreated along AB under the control of motors I and II to simulate the compression or extension environment; the foam plate is used to simulate the pre-existing basement, and different types of pre-existing faults can be simulated by adjusting the inclination, dip angle, and placement position. The rubber sheet and plastic sheet can promote the growth and development of the pre-existing faults, and the length and width of the rubber sheet and plastic sheet can be adjusted according to different situations;

[0035] S620 designs a structural physical model of similar proportions based on the basic morphological features of the target fault growth connection to be verified: when simulating the segmented growth of the same-direction inclined faults, the foam plates are placed along the same inclination; when simulating the segmented growth of the oppositely inclined faults, the foam plates are placed along the opposite inclination; when simulating the segmented growth of the oppositely inclined faults, the foam plates are placed along the opposite inclination;

[0036] S630 lays white quartz sand layer by layer in the central area, and each layer of quartz sand is marked by ultra-thin layers of quartz sand of different colors; motors I and II are controlled by computer programming to drive baffles C and D to move respectively, which is used to simulate the genetic environment;

[0037] S640 compares the experimental results with the actual situation and analyzes its growth connection process.

[0038] Compared with the prior art, the present invention has the following beneficial effects:

[0039] At present, the process of identifying fault growth connection mode and analyzing fault growth connection process is not perfect enough. The present invention systematically explains the process from collecting data to identifying the target fault growth connection position and growth connection type, and obtains the results by setting physical simulation experiments with controllable parameters, and then compares and analyzes them in combination with the actual situation, or further sets up control experiments, so as to understand and reveal the formation process and formation environment of the target fault development growth connection pattern.

[0040] The present invention can be widely used in oil and gas field exploration and development production practices. At present, domestic basin exploration has broad prospects, among which structural analysis is an important part of basin exploration. Ascertaining the underground structure is an important basis for exploration deployment and production development, especially the analysis of faults in the basin, which is an important step to understand the underground structure, divide the exploration "sweet spot" zones, and then implement the structural development characteristics. It has a clear guiding significance for further analyzing the oil and gas generation, migration and accumulation process and guiding exploration deployment. Based on exploration needs, it can be said that the market demand for innovative achievements is broad and the prospects are bright. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0042] Figure 1 The present invention provides a simulation experiment of segmented growth connection of faults with different inclinations under a pre-existing basement;

[0043] Figure 2 This is a plane fault distribution map of the T2 layer in a certain area of ​​the Songliao Basin provided by Example 1 of the present invention;

[0044] Figure 3 It is a fault throw-displacement curve diagram of fault Fa-Fb in a certain area of ​​Songliao Basin at the T2 layer along the strike provided by Example 1 of the present invention;

[0045] Figure 4 is a seismic profile at the connection of the fault layer Fa-Fb provided in Example 1 of the present invention;

[0046] Figure 5 The three-dimensional geological model of the fault Fa-Fb provided in Example 1 of the present invention;

[0047] Figure 6 is a diagram of an experimental device for simulating the growth connection process of fault Fa-Fb provided in Example 1 of the present invention;

[0048] Figure 7 It is a plane diagram of the experimental results of the simulated fault Fa-Fb growth connection process provided by Example 1 of the present invention;

[0049] Figure 8 It is a cross-sectional view of the experimental results of the simulated fault Fa-Fb growth connection process provided in Example 1 of the present invention. DETAILED DESCRIPTION

[0050] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0051] The present invention is described in further detail below.

[0052] Example 1: Taking a certain area in Songliao Basin as an example

[0053] S100 collects seismic data, well data and core data from a certain area of ​​the Songliao Basin in a three-dimensional seismic work area, completes the production of synthetic records of all vertical wells in a certain area, identifies the main strata T2, F5, F8, F13 and Fd division marks through the well-seismic calibration results and the vertical well stratum data statistics, selects dozens of exploration and evaluation wells to build a seismic interpretation framework profile for the entire area, calibrates these typical seismic well-linked large profiles, and conducts a fine structural interpretation of the main strata and faults in the study area based on the fine calibration results. The main strata are interpreted and closed in the form of points, lines and surfaces on the main survey line and the connecting survey line, and an isochronous stratigraphic framework is established.

[0054] S200 is based on the fine seismic interpretation results of a certain area in the Songliao Basin. According to the strike and cutting shape of the fault in each stratum, the overall plane distribution of the fault in the seismic data of the study area is interpreted and statistically sorted, and the plane fault distribution map of the T2 layer in the study area is drawn ( Figure 2 ), the middle of a single fault is defined as the middle end, and the tail is defined as the end. The formation of the study area was mainly affected by east-west extension stress, and the faults are almost all north-south. It is observed that there are 9 areas in the study area where the faults are superimposed, connected at the ends, or have similar distances at the ends. Among them, the faults in areas 1, 3, 5-7, and 9 are in a superimposed state; the faults in area 2 are in a state of similar distance at the ends; the faults in areas 4 and 8 are in a state of connecting at the ends. It is preliminarily identified that the fault growth connection phenomenon occurs in areas 1-9 of the study area, and the target fault in area 1 is selected as an example for further analysis.

[0055] S300, based on the preliminary determination of the target faults Fa and Fb in area 1, selects the fault distance values ​​Y of the target faults Fa and Fb on the main marker layer T2 at equal intervals along the strikes of the faults Fa and Fb, where Y is a natural number; records the survey line number X where the selected fault distance values ​​for the target faults Fa and Fb are located, where X is a natural number; the survey line number and the fault distance value measured at each location must correspond.

[0056] S320 establishes a coordinate system: the survey line number where the fault distance value of the target fault Fa and Fb is selected is set as the horizontal coordinate, and the selected fault distance data is set as the vertical coordinate;

[0057] S330 puts the recorded survey line number X and the corresponding fault throw value Y into the established coordinate system, generates the strike displacement-fault throw points, and connects the strike displacement-fault throw points in sequence to generate the strike displacement-fault throw curve of the target faults Fa and Fb on the main marker layer T2; the fault throw value represents the vertical displacement value of the fault in this stratum, so the strike displacement-fault throw curve ( Figure 3 ) is the concave point A in the figure and is the growth connection point of faults Fa and Fb.

[0058] S400 determines the fault growth connection point A in S300 and then calculates the seismic profile ( Figure 4 ) were analyzed and it was observed that the dips of faults Fa and Fb were the same, both due east, thus judging that faults Fa and Fb were connected in the same direction.

[0059] After S400 judged that faults Fa and Fb were connected in the same direction, S500 collected data of faults Fa and Fb and surrounding strata based on the results of S100 seismic interpretation, processed them, and imported them into relevant software to create a three-dimensional geological model of the Fa-Fb fault ( Figure 5 )Verify that the fault growth connection type is the same-direction growth connection type.

[0060] S600 To explore the role and characteristics of the segmented growth connection process of two unidirectional normal faults Fa and Fb in area 1 of the region, a simulation experiment of segmented growth connection of unidirectionally dipping faults under the pre-existing basement was set up:

[0061] S610 Experimental Model( Figure 6 ) consists of a control module and an experimental module. The control module includes a computer, motors I and II. The experimental module uses a steel plate as the bottom, transparent glass plates A, B, baffles C, and D as the boundaries. Plates A, B, C, and D can be closely connected together to form a rectangular central area, and foam boards, rubber sheets, and plastic sheets are placed in the central area. A and B are parallel and fixed during the experiment, and C and D are pushed or retreated along AB under the control of motors I and II to simulate the stretching and squeezing environment.

[0062] Based on the basic morphological characteristics of the growth connection of the target faults Fa and Fb to be verified, S620 sets the initial interval between baffles C and D to 40 cm, the length of baffles C and D to 40 cm, and lays two foam boards close to baffle C, with a width of 8 cm reserved in the middle of the foam boards, and rubber cloth and plastic cloth are placed on the bottom. The inclined parts of the two foam boards are 45°, that is, the existing faults are also at a 45° angle. The height of the two foam boards is 2 cm, the bottom of foam board I is 16 cm wide and 17 cm long, and the bottom of foam board II is 16 cm wide and 20 cm long. The bottom of the foam board is located above the rubber cloth to ensure the smooth development of the fault. The space reserved between the foam boards can ensure that the two faults do not develop in the same position. At the same time, the complete process of the growth connection between the two faults can be seen on the plane.

[0063] S630 first laid 3 cm thick gray-white quartz sand in the central area, used a thin layer of black quartz sand as a marker layer, and then laid 1 cm thick quartz sand layer by layer, and used green, red, yellow, pink and blue as marker layers respectively; the motor II was controlled by computer programming to drive the baffle D to move outward to simulate the extension dynamic environment, and the movement speed was 0.1 cm / 1 min; in this stage, every time the extension amount increased by 0.5 cm, the extension was stopped and photos were taken until the extension stopped, and finally the slices were observed, and the experimental results were compared with the segmented growth connection phenomenon of two syn-directional normal faults Fa and Fb in basin area 1.

[0064] S640 Experimental Results Comparison

[0065] Plane experimental results ( Figure 7 ): When the extension reaches 2 cm, faults begin to be observed in the plane, and the faults in the south are more obvious than those in the north. The main faults F1 and F2 appear first, followed by the secondary faults F3 and F4. When the right extension reaches 3 cm, under the continuous extension stress environment, the scale of F1-F4 gradually increases, and the secondary fault F8 begins to form between F1 and F2. When the right extension reaches 4 cm, the scale of F1-F4 further increases, F2 extends significantly to the south, F1 and F2 have a growth connection trend, and secondary faults F6, F7 and F9 begin to appear. When the right extension reaches 5 cm, all faults gradually extend to both sides, and F1 and F2 grow and connect in the plane. When the right extension reaches 6 cm, obvious sand body collapse occurs in the downthrown plate of the F1-F4 fault, and the growth connection phenomenon of F1 and F2 becomes more obvious. At this time, the morphology of fault F1-F2 in the plane is highly similar to fault Fa-Fb.

[0066] Section test results ( Figure 8): A slice through the growth junction of planes F1 and F2 shows that F1 and F2 have the same inclination and are close to each other, almost touching each other; F3, F3', F6, and F8 are secondary faults formed when the main fault F1 developed, among which F3, F3', and F8 have opposite inclinations to F1, and F6 has the same inclination as F1; the slice characteristics are highly consistent with the seismic profile characteristics of point A at the growth junction of fault Fa-Fb in a certain area of ​​the Songliao Basin.

[0067] Through comparative analysis

[0068] The growth connection characteristics of fault F1-F2 and fault Fa-Fb are highly similar in plane and section. Therefore, it is determined that the Fa-Fb syn-growth connection pattern in a certain area of ​​the Songliao region was formed under a continuous extensional stress environment.

[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An experimental simulation method for analyzing fault growth connection types and processes in a basin, characterized in that: The steps include: S100 collects 3D seismic data in the study area and conducts detailed seismic interpretation; Based on the S100 fine seismic interpretation, S200 draws the fault distribution map of each layer; preliminarily identifies the target faults where fault growth connection occurs in the study area; S300, based on the preliminary determination of the target fault in S200, sorts out the strike displacement data of the target fault on the main marker layer, draws the strike displacement-fault displacement curve of the target fault to confirm the fault growth connection point; S400 determines the fault growth connection type by analyzing the seismic profile at the connection point based on the fault growth connection point confirmed by S300; S500, after confirming the connection type in S400, creates a three-dimensional geological model based on the target fault and surrounding strata data to verify the fault growth connection type; S600 sets up a simulation experiment of segmented growth and connection of faults with different inclinations under the pre-existing basement, and analyzes its growth and connection process by comparing the experimental results with the actual situation.

2. The experimental simulation method for analyzing fault growth connection types and processes in a basin according to claim 1, characterized in that: The steps of fine seismic interpretation in S100 are as follows: S110 collects regional seismic data, well data and core data in the study area; According to the theory of sequence stratigraphy, S120 divides the well-seismic data that meet the requirements into sequences and establishes a high-precision isochronal stratigraphic framework: S121 identifies stratigraphic unconformities and divides stratigraphic sequences based on geological interface markers in well-seismic data; S122 uses the data of each single well and the seismic wavelet near the well to produce synthetic seismic records, calibrate the formation, and divide the main marker layers in the study area; S123 uses single well data to draw a well-joint profile, matches it with the sequence stratigraphy divided by S121, and establishes a well-seismic joint profile seismic sequence; S124 tracks and closes the seismic geological strata in the study area under the constraints of S122 and S123, completes the closure of the main strata and faults in the main survey line and the connecting survey line, and establishes an isochronous stratigraphic framework.

3. The experimental simulation method for analyzing fault growth connection types and processes in a basin according to claim 1, characterized in that: The steps of drawing a plane fault distribution map and identifying a target fault in S200 are as follows: On the basis of S100 fine seismic interpretation, according to the strike and cutting shape of the fault in each stratum, the overall planar distribution of the fault in the seismic data interpretation is obtained, and the planar fault distribution map of each layer is drawn. In the map, the middle of the fault is defined as the middle end and the two sides are the ends. It is observed whether there is overlap, end connection, and similar distance between faults with similar strikes, so as to preliminarily identify the target faults where fault growth connection occurs in the study area.

4. The experimental simulation method for analyzing fault growth connection types and processes in a basin according to claim 1, characterized in that: The steps of drawing the strike displacement-fault throw curve of the target fault and confirming the fault growth connection point in S300 are as follows: S310 collects data: based on S100, along the strike of the target fault, select the fault distance value Y of the target fault on the main marker layer at equal intervals, where Y is a natural number; record the survey line number X where the fault distance value selected for the target fault is located, where X is a natural number; the survey line number and the fault distance value measured at each location must correspond; S320 establishes a coordinate system: sets the survey line number where the fault distance value of the target fault is selected as the horizontal coordinate, and sets the selected fault distance data as the vertical coordinate; S330 puts the recorded survey line number X and the corresponding fault throw value Y into the established coordinate system, generates along-strike displacement-fault throw points, and connects the along-strike displacement-fault throw points in sequence to produce a strike displacement-fault throw curve; the fault throw value represents the vertical displacement value of the fault in this stratum, so the concave point value of the strike displacement-fault throw curve is the growth connection point of the two target faults.

5. The experimental simulation method for analyzing fault growth connection types and processes in a basin according to claim 1, characterized in that: The steps for analyzing the seismic profile at the connection in S400 to determine the fault growth connection type are as follows: Based on the fault growth connection point confirmed in S300, S400 analyzes the seismic profile passing through the connection point and perpendicular to the fault strike, observes the dip relationship between the two target faults, and thus determines the fault growth connection type.

6. The experimental simulation method for analyzing fault growth connection types and processes in a basin according to claim 1, characterized in that: The steps for making a 3D geological model in S500 to verify the fault growth connection type are as follows: Based on the S100 fine seismic interpretation, S500 collects data on the target fault and surrounding strata; the collected data is vectorized and imported into relevant software to create a three-dimensional geological model, thereby verifying the fault growth connection type.

7. The experimental simulation method for analyzing fault growth connection types and processes in a basin according to claim 1, characterized in that: The steps for setting up a simulation experiment of segmented growth connection of faults with different inclinations under a pre-existing basement in S600 and comparing it with the actual situation are as follows: The S610 experimental model consists of two parts: a control module and an experimental module. The control module includes a computer, motors I and II. The experimental module uses a steel plate as the bottom and transparent glass plates A, B, baffles C, and D as the boundaries. Plates A, B, C, and D can be closely connected together to form a rectangular central area, and foam plates, rubber sheets, and plastic sheets are placed in the central area; A and B are parallel and fixed during the experiment, and C and D are respectively advanced or retreated along AB under the control of motors I and II to simulate the compression or extension environment; the foam plate is used to simulate the pre-existing basement, and different types of pre-existing faults can be simulated by adjusting the inclination, dip angle, and placement position. The rubber sheet and plastic sheet can promote the growth and development of the pre-existing faults, and the length and width of the rubber sheet and plastic sheet can be adjusted according to different situations; S620 designs a structural physical model of similar proportions based on the basic morphological features of the target fault growth connection to be verified: when simulating the segmented growth of the same-direction inclined faults, the foam plates are placed along the same inclination; when simulating the segmented growth of the oppositely inclined faults, the foam plates are placed along the opposite inclination; when simulating the segmented growth of the oppositely inclined faults, the foam plates are placed along the opposite inclination; S630 lays white quartz sand layer by layer in the central area, and each layer of quartz sand is marked by ultra-thin layers of quartz sand of different colors; motors I and II are controlled by computer programming to drive baffles C and D to move respectively, which is used to simulate the genetic environment; S640 compares the experimental results with the actual situation and analyzes its growth connection process.

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