Magnetic recording device and magnetic memory

Abstract

The application relates to the technical field of magnetic storage, and discloses a magnetic recording device, which comprises a substrate and a strip-shaped information storage layer. The substrate comprises a base made of a flexible material, and the strip-shaped information storage layer comprises a plurality of ferromagnetic layers made of ferromagnetic material and a plurality of interval layers made of non-magnetic material, the interval layers are located between the ferromagnetic layers, and the ferromagnetic layers and the interval layers are alternately stacked on the substrate. Since the magnetization direction of each ferromagnetic layer can be changed through writing, the proportion of different magnetization directions of the ferromagnetic layers in the strip-shaped information storage layer can be changed to represent different data storage states by adjusting the energy level of an energy auxiliary device of a magnetic field writing head, the magnetization direction of the corresponding layers of ferromagnetic layers is flipped, multi-state storage is realized, the storage density is improved, and the upper limit of the data storage capacity is improved. The application further discloses a magnetic storage device.

Description

Technical Field

[0001] This application relates to the field of magnetic storage technology, such as a magnetic recording device and a magnetic storage device. Background Technology

[0002] Currently, magnetic storage devices, represented by hard disk drives, are important tools for expanding the data storage capacity of computers. Existing disk drives, due to insufficient spatial resolution of their read heads and their limitation to detecting magnetic fields in only one direction, mostly employ single-layer magnetic recording media with perpendicular (or in-plane) magnetic anisotropy. This type of magnetic recording medium only has two stable states: vertically upward (horizontally to the left) or vertically downward (horizontally to the right). This means that a single storage cell in a disk drive can only store one binary piece of information, resulting in low storage density and an inability to adequately meet the ever-increasing demand for data storage.

[0003] The related technology discloses a magnetic recording device, including: a substrate, and a magnetic recording thin film on the substrate. The magnetic recording thin film is circular and includes three ferromagnetic layers separated by two non-magnetic intermediate layers. The easy magnetization directions of the three ferromagnetic layers are along the x, y, and z directions, respectively. The z direction is the vertical direction, and the x and y directions are in-plane directions and are respectively along the radial and tangential directions.

[0004] In the process of implementing the embodiments of this disclosure, at least the following problems were found in the related art:

[0005] By employing relevant technologies and setting up multiple ferromagnetic layers with different magnetization directions, different binary information can be stored, which improves the storage density of the disk to some extent. Building on this, stacking multiple disks can further increase data storage capacity. However, in practical applications, the limited number of stackable disks due to overall chassis size constraints means that the storage capacity can easily reach its limit.

[0006] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this application, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0007] To provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. This summary is not intended as a general commentary, nor is it intended to identify key / important components or describe the scope of protection of these embodiments, but rather as a prelude to the detailed description that follows.

[0008] This disclosure provides a magnetic recording device and a magnetic storage device to increase the upper limit of data storage capacity.

[0009] In some embodiments, the magnetic recording device includes: a substrate, including a base made of a flexible material; a strip-shaped information storage layer, including at least two ferromagnetic layers made of ferromagnetic material and at least one spacer layer made of nonmagnetic material; wherein the spacer layer is located between the ferromagnetic layers, and the ferromagnetic layers and the spacer layer are alternately stacked on the substrate.

[0010] Optionally, the substrate further includes at least one coating layer disposed on the lower surface of the substrate.

[0011] Optionally, the magnetization direction of the ferromagnetic layer includes the vertical direction and / or the in-plane direction.

[0012] Optionally, the strip information storage layer includes: multiple storage units, each storage unit being a strip information storage layer of a set length; wherein, each storage unit represents the corresponding data storage state by the distribution ratio of the magnetization direction of its corresponding ferromagnetic layer.

[0013] Optionally, the easy magnetization direction of the ferromagnetic layers of individual memory cells is the same.

[0014] Optionally, the strip information storage layer further includes: at least one isolation layer disposed between the substrate and the strip information storage layer, for reducing the energy transferred to the substrate during the writing process.

[0015] Optionally, the strip information storage layer further includes at least one seed layer disposed between the substrate and the strip information storage layer.

[0016] Optionally, the magnetic recording device further includes: a magnetic field writing head, comprising a magnetic field generating device and an energy assist device, wherein the magnetic field generating device is used to generate a vertical or in-plane magnetic field in a first region of the strip information storage layer, and the energy assist device is used to reduce the magnetic field strength of the coercive field of the magnetic moment in a second region of the strip information storage layer; wherein the first region includes the second region.

[0017] Optionally, the magnetic recording device further includes a controller configured to, when polymorphic writing is performed to the strip information storage layer via a magnetic field write head, adjust the energy level of the energy assist device according to the data to be written, so as to reverse the magnetization direction of the ferromagnetic layer of the target number of layers.

[0018] In some embodiments, the magnetic storage device includes the magnetic recording device described above.

[0019] The magnetic recording device and magnetic storage device provided in this disclosure can achieve the following technical effects:

[0020] The magnetic recording device includes a substrate and a strip-shaped information storage layer. The substrate comprises a base made of a flexible material, and the strip-shaped information storage layer includes at least two ferromagnetic layers made of ferromagnetic material and at least one spacer layer made of non-magnetic material, with the spacer layer located between the ferromagnetic layers. The ferromagnetic layers and spacer layers are alternately stacked on the substrate. Since the magnetization direction of each ferromagnetic layer can be changed through writing, by adjusting the energy level of the energy-assisted device of the magnetic field write head and flipping the magnetization direction of the corresponding number of ferromagnetic layers, the proportion of different magnetization directions of the ferromagnetic layers in the strip-shaped information storage layer can be changed to represent different data storage states, thereby achieving polymorphic storage, increasing storage density, and raising the upper limit of data storage capacity. Furthermore, by placing the strip-shaped information storage layer on a flexible substrate, the storage strip surface can be wound up using the flexible substrate, thus utilizing the longitudinal width dimension of the strip surface for information storage, further increasing the upper limit of data storage capacity.

[0021] The above general description and the description below are exemplary and illustrative only and are not intended to limit this application. Attached Figure Description

[0022] One or more embodiments are illustrated by way of example with reference to the accompanying drawings. These illustrations and drawings do not constitute a limitation on the embodiments. Elements having the same reference numerals in the drawings are shown as similar elements. The drawings are not to be scaled. And wherein:

[0023] Figure 1 This is a schematic diagram of the structure of a magnetic recording device provided in an embodiment of this disclosure;

[0024] Figure 2 This is a schematic diagram of the structure of another magnetic recording device provided in an embodiment of this disclosure;

[0025] Figure 3 This is a schematic diagram of the usage state of a magnetic recording device provided in an embodiment of this disclosure;

[0026] Figure 4 This is a schematic diagram of the usage state of another magnetic recording device provided in an embodiment of this disclosure.

[0027] Figure label:

[0028] 10: Substrate; 11: Base; 12: Coating;

[0029] 20: Strip information storage layer; 21: Ferromagnetic layer; 22: Spacer layer; 23: Isolation layer; 24: Seed layer; 25: First ferromagnetic layer; 26: Second ferromagnetic layer; 27: Third ferromagnetic layer; 28: Fourth ferromagnetic layer; 29: First spacer layer; 30: Second spacer layer; 31: Third spacer layer; 32: Fifth ferromagnetic layer; 33: Fourth spacer layer;

[0030] 40: Magnetic field writing head; 41: Energy auxiliary device. Detailed Implementation

[0031] To provide a more detailed understanding of the features and technical content of the embodiments of this disclosure, the implementation of the embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. The accompanying drawings are for illustrative purposes only and are not intended to limit the embodiments of this disclosure. In the following technical description, for ease of explanation, several details are used to provide a full understanding of the disclosed embodiments. However, one or more embodiments may still be implemented without these details. In other cases, well-known structures and devices may be simplified in their depiction to simplify the drawings.

[0032] It should be noted that, unless otherwise specified, the embodiments and features described in the present disclosure can be combined with each other.

[0033] Combination Figures 1 to 4 As shown, this disclosure provides a magnetic recording device including a substrate 10 and a strip-shaped information storage layer 20. The substrate 10 includes a base 11 made of a flexible material; the strip-shaped information storage layer 20 includes at least two ferromagnetic layers 21 made of ferromagnetic material and at least one spacer layer 22 made of nonmagnetic material; wherein the spacer layer 22 is located between the ferromagnetic layers 21, and the ferromagnetic layers 21 and the spacer layer 22 are alternately stacked on the substrate 10.

[0034] In this embodiment of the disclosure, the strip information storage layer 20 may include a plurality of alternately stacked ferromagnetic layers 21 made of ferromagnetic material and spacer layers 22 made of nonmagnetic material.

[0035] In this embodiment, the material constituting the substrate 11 includes flexible materials such as polyethylene terephthalate, polyimide, polyvinyl chloride, and / or polypropylene, and the thickness of the substrate 11 ranges from 0.5 to 50 μm. The substrate 11 composed of the above materials can provide mechanical support for the ferromagnetic layer 21, maintain the properties of the ferromagnetic layer 21 during deformation and bending, and maintain good recovery ability after multiple bending deformations.

[0036] In this embodiment, the strip-shaped information storage layer 20 includes a ferromagnetic layer 21 and a spacer layer 22. The ferromagnetic layer 21 and the spacer layer 22 are alternately stacked on the substrate 10. Specifically, combined with Figure 1As shown, the ferromagnetic layer 21 includes a first ferromagnetic layer 25 stacked alternately on the substrate 10, a first spacer layer 29 stacked on the first ferromagnetic layer 25, a second ferromagnetic layer 26 stacked on the first spacer layer 29, a second spacer layer 30 stacked on the second ferromagnetic layer 26, a third ferromagnetic layer 27 stacked on the second spacer layer 30, a third spacer layer 31 stacked on the third ferromagnetic layer 27, a fourth ferromagnetic layer 28 stacked on the third spacer layer 31, and at least one subsequent ferromagnetic layer 21 and a subsequent spacer layer 22, wherein each subsequent ferromagnetic layer 21 is stacked on a previous spacer layer 22, and each subsequent spacer layer 22 is stacked on a previous subsequent ferromagnetic layer 21, until a fourth spacer layer 33 stacked on the previous ferromagnetic layer 21 and a fifth ferromagnetic layer 32 stacked on the fourth spacer layer 33, thereby completing the alternating stacking of all ferromagnetic layers 21 and spacer layers 22 on the substrate 10.

[0037] The magnetic recording device provided in this embodiment of the present disclosure, by setting a structure of multiple ferromagnetic layers 21 and using them as a storage medium, exhibits high storage stability due to the enhanced storage stability achieved through interlayer coupling and the superposition of the perpendicular magnetic anisotropy of the multiple ferromagnetic layers 21. Furthermore, the structure of the multiple ferromagnetic layers 21 can present continuously adjustable multi-magnetic domain states within a storage cell of the same size. Therefore, by changing the proportion of different magnetization directions of the multiple ferromagnetic layers, different data storage states can be represented, thereby enabling multi-bit storage, further increasing storage capacity and density. Based on this, the strip-shaped information storage layer 20 is disposed on the flexible substrate 11, allowing the storage strip surface to be wound up using the flexible substrate 11. This leverages the rollability of the flexible substrate 11 to utilize the longitudinal width dimension of the strip surface in information storage, increasing the upper limit of data storage capacity.

[0038] Optionally, combined Figure 1 As shown, the substrate 10 also includes at least one coating layer 12. The coating layer 12 is disposed on the lower surface of the substrate 11.

[0039] In this embodiment, the coating 12 can be a single layer or multiple layers. The coating 12 can be composed of materials such as carbon black, ceramic microparticles, and / or resin. By using materials such as carbon black to form the coating 12, static electricity accumulation can be dispersed and reduced, thus reducing the potential damage of static electricity to the ferromagnetic layer 21. By using chemically inert materials such as ceramic microparticles to form the coating 12, the substrate 11 can be protected from chemical corrosion, improving the chemical stability of the storage medium.

[0040] In this way, by providing a coating 12 on the lower surface of the substrate 11, static electricity accumulation can be prevented, mechanical durability can be enhanced, and the winding characteristics of the substrate 11 can be improved.

[0041] Optionally, the magnetization direction of the ferromagnetic layer 21 includes the vertical direction and / or the in-plane direction.

[0042] In this embodiment of the disclosure, combined with Figure 3 and Figure 4 As shown, the magnetization direction of the multilayer ferromagnetic layer 21 can be perpendicular, i.e., perpendicular to the surface of the substrate 11 (perpendicular magnetization), or in-plane, within the surface of the substrate 11 (in-plane magnetization), or a combination of both. The combination of perpendicular and in-plane magnetization directions can provide additional magnetization states, which helps improve the thermal stability and anti-interference capability of the stored data. Furthermore, since different magnetization directions can represent different data states, polymorphic storage can be achieved, thereby storing more data in the same physical space.

[0043] Thus, the magnetization direction of the multilayer ferromagnetic layer 21 includes the vertical direction and / or the in-plane direction, so that the magnetization direction of the multilayer ferromagnetic layer 21 can be flipped by the magnetic field in the vertical or in-plane direction generated by the magnetic field write head 40, thereby realizing multi-bit storage.

[0044] Optionally, the strip information storage layer 20 includes multiple storage units. Each storage unit is a strip information storage layer 20 of a set length; wherein, the data storage state of each storage unit is represented by the distribution ratio of the magnetization direction of its corresponding ferromagnetic layer 21.

[0045] In this embodiment, multiple storage cells are uniformly distributed along the length of the strip-shaped information storage layer 20. Each storage cell comprises a continuous multilayer film structure consisting of alternating stacked ferromagnetic layers 21 and spacer layers 22 in the vertical direction of the substrate 10, and non-magnetic materials may be filled between each storage cell. Figure 3 and Figure 4 As shown, each column of ferromagnetic layers 21 and spacer layers 22 is stacked in a continuous multilayer film structure, which constitutes a storage unit. Multiple storage units are evenly distributed along the length of the strip-shaped information storage layer 20. The gap between two storage units can be filled with non-magnetic material to separate the stored units.

[0046] In this embodiment of the disclosure, each storage cell represents its corresponding data storage state through the distribution ratio of the magnetization direction of its respective ferromagnetic layer 21. For example... Figure 3As shown, the easy magnetization direction of the ferromagnetic layer 21 corresponding to each storage cell is vertically downward. After the magnetic field write head 40 flips the magnetization direction of the ferromagnetic layer 21, the first storage cell on the left includes at least two ferromagnetic layers 21 with a vertically upward magnetization direction and three ferromagnetic layers 21 with a vertically downward magnetization direction from top to bottom. The second storage cell on the left consists entirely of ferromagnetic layers 21 with a vertically upward magnetization direction from top to bottom. Because the proportions of different magnetization directions of the ferromagnetic layers corresponding to the first and second storage cells on the left are different, the data storage states represented by the first and second storage cells on the left are different. Figure 4 As shown, the easy magnetization direction of the ferromagnetic layer 21 corresponding to each storage cell is horizontal to the left. After the magnetic field write head 40 flips the magnetization direction of the ferromagnetic layer 21, the first storage cell on the left includes at least two ferromagnetic layers 21 with a magnetization direction of horizontal to the right and three ferromagnetic layers 21 with a magnetization direction of horizontal to the left from top to bottom. The second storage cell on the left consists entirely of ferromagnetic layers 21 with a magnetization direction of horizontal to the right from top to bottom. Since the proportion of different magnetization directions of the ferromagnetic layers corresponding to the first and second storage cells on the left is different, the data storage states represented by the first and second storage cells on the left are different.

[0047] In this way, by changing the magnetization direction of the ferromagnetic layer 21 in the storage cell, the proportion of different magnetization directions of the ferromagnetic layer 21 in the storage cell can be changed, so that each storage cell can represent different data storage formats, realizing information storage that is more complex than binary information. In addition, by evenly distributing multiple storage cells along the length of the strip information storage layer 20, and by making the strip information storage layer 20 rollable, the data storage density is further improved.

[0048] Optionally, the ferromagnetic layers 21 of a single memory cell have the same easy magnetization direction.

[0049] In this embodiment of the disclosure, the easy magnetization direction of each ferromagnetic layer 21 can be either in-plane or perpendicular.

[0050] In this way, since the easy magnetization direction of each ferromagnetic layer 21 in each storage cell is the same, the magnetic field write head 40 only needs to generate a magnetic field in a single direction to change the magnetization direction of each ferromagnetic layer 21 in the effective area, thereby changing the proportion of the overall magnetization direction of all ferromagnetic layers 21 in the vertical direction of the substrate 10, and realizing the representation of different data storage formats by multiple ferromagnetic layers 21. Optionally, the ferromagnetic material includes a single metal or alloy that exhibits ferromagnetism.

[0051] In this embodiment, the single metal exhibiting ferromagnetism includes Cr (chromium), Mn (manganese), Co (cobalt), Fe (iron), Ni (nickel), or other ferromagnetic metals. The ferromagnetic alloy includes alloys composed of multiple metals selected from Cr, Mn, Co, Fe, Ni, and other ferromagnetic metals, and exhibiting ferromagnetism. Ferromagnetic alloys also include alloys of the aforementioned single metals or alloys with at least one of the elements B (boron), C (carbon), and N (nitrogen), such as Co-Fe, Co-Fe-B, Ni-Fe, CoNi, CoPt, BaFe, or SrFe.

[0052] Thus, ferromagnetic materials include single metals or alloys that exhibit ferromagnetism. Ferromagnetic alloys typically have higher saturation magnetization and lower coercivity than single metals. Therefore, by controlling the alloy composition of the ferromagnetic layer 21, the magnetic properties of the ferromagnetic layer 21 can be optimized to meet specific storage requirements.

[0053] Optionally, the spacer layer 22 is made of a metallic material and / or a metal oxide material.

[0054] In this embodiment, the metallic material constituting the spacer layer 22 includes an alloy of one or more metals such as Nb (niobium), Ta (tantalum), Cr (chromium), Mo (molybdenum), W (tungsten), Re (rhenium), Ru (ruthenium), Os (osmium), Rh (rhodium), Ir (iridium), Pt (platinum), Cu (copper), Ag (silver), Au (gold), Mo (molybdenum), Pd (palladium), Bi (bismuth), and Ti (titanium). The metal oxide material constituting the spacer layer 22 includes metal oxide materials such as MgO (magnesium oxide) and AlO (aluminum oxide).

[0055] Thus, by providing a spacer layer 22 made of non-magnetic material between the ferromagnetic layers 21, the ferromagnetic layers 21 can be provided with the DMI (Dzyaloshinskii-Moriya, interaction), interlayer coupling and / or vertical magnetic anisotropy required for the formation of stable magnetic storage.

[0056] Optionally, the magnetic recording device further includes at least one isolation layer 23. The isolation layer 23 is disposed between the substrate 10 and the strip information storage layer 20 to reduce the energy transferred to the substrate 11 during the writing process.

[0057] In this embodiment of the disclosure, combined with Figure 1As shown, the isolation layer 23 is disposed between the substrate 10 and the bottommost ferromagnetic layer 21 of the strip information storage layer 20. One or more isolation layers 23 can be disposed between the substrate 10 and the ferromagnetic layer 21 according to thermal insulation requirements. The material constituting the isolation layer 23 can be a material with thermal and chemical stability, such as nano-ceramic thin films (e.g., titanium oxide, indium tin oxide), polyimide films, polytetrafluoroethylene films, etc. It can also be common magnetic shielding materials such as iron-nickel alloys, iron-silicon alloys, iron-aluminum alloys, ferrites, nickel-copper alloys, etc., to effectively block or absorb magnetic fields and reduce interference to other storage cells. The thickness of the isolation layer 23 ranges from 0.1 to 5 μm.

[0058] In this way, by setting an isolation layer 23 between the substrate 10 and the strip information storage layer 20 (ferromagnetic layer 21), the energy transmitted by the energy auxiliary device 41 of the magnetic field write head 40 can be blocked during the writing process, so as to prevent the substrate 11 from failing due to overheating and to prevent other storage units from reducing storage stability due to auxiliary energy, thereby ensuring the stability and reliability of the magnetic recording device when writing data.

[0059] Optionally, the magnetic recording device further includes at least one seed layer 24. The seed layer 24 is disposed between the substrate 10 and the strip information storage layer 20.

[0060] In this embodiment, the seed layer 24 is disposed between the substrate 10 and the bottommost ferromagnetic layer 21 of the strip information storage layer 20, specifically, in conjunction with... Figure 1 As shown, one or more seed layers 24 can be disposed between the isolation layer 23 and the bottommost ferromagnetic layer 21 of the strip information storage layer 20. The materials constituting the seed layer 24 include one or more of Nb (niobium), Ta (tantalum), Cr (chromium), Mo (molybdenum), W (tungsten), Re (rhenium), Ru (ruthenium), Os (osmium), Rh (rhodium), Ir (iridium), Pt (platinum), Cu (copper), Ag (silver), Au (gold), NiFe (nickel-iron), TaB (tantalum boron), and TaN (tantalum nitride). The thickness of the seed layer 24 ranges from 1 to 500 nm.

[0061] In this way, by placing one or more seed layers 24 between the isolation layer 23 and the bottommost ferromagnetic layer 21 of the strip information storage layer 20, the ferromagnetic layer 21 material can grow more orderly and evenly, thereby achieving sufficient storage stability.

[0062] Optionally, multiple strip-shaped information storage layers 20 are arranged on the substrate 10.

[0063] In this embodiment of the disclosure, combined with Figure 2As shown, the multiple strip-shaped information storage layers 20 arranged on the substrate 10 can be uniformly arranged along the axial direction of the substrate 11. By uniformly arranging multiple strip-shaped information storage layers 20 along the axial direction of the substrate 10, more storage cells can be accommodated in a limited space, thereby increasing the storage density of the storage medium. Furthermore, the uniformly arranged strip-shaped information storage layers 20 make the writing and reading processes more uniform and consistent, which helps to improve the accuracy of data writing and the reliability of data reading.

[0064] In this way, each strip-shaped information storage layer 20 can be used as a storage unit with a set length. Since the area of ​​magnetic domains with different magnetic moment directions can be changed by writing, each storage unit can represent different data storage states by the magnetization direction distribution ratio of the multilayer continuous film structure of the alternatingly stacked ferromagnetic layers 21 and spacer layers 22, thereby realizing polymorphic storage in a single storage unit. By arranging multiple strip-shaped information storage layers 20 on the substrate 11 and using the magnetization direction distribution ratio of the multilayer continuous film structure of the alternatingly stacked ferromagnetic layers 21 and spacer layers 22 to achieve polymorphic storage, the storage density and capacity are improved.

[0065] Optionally, the magnetic recording device further includes a magnetic field write head 40. The magnetic field write head 40 includes a magnetic field generating device and an energy assist device 41. The magnetic field generating device is used to generate a vertical or in-plane magnetic field in a first region of the strip information storage layer 20, and the energy assist device 41 is used to reduce the magnetic field strength of the coercive field of the magnetic moment in a second region of the strip information storage layer 20; wherein, the first region includes the second region.

[0066] In this embodiment, the magnetic field write head 40 can be positioned above the strip information storage layer 20 of the magnetic memory. A magnetic field is generated by a magnetic field generator, and auxiliary energy is generated by an energy assist device 41. The auxiliary energy includes thermal or microwave assistance, such as a laser-heated hot head or an oscillator that generates microwaves at a set frequency. The direction and intensity of the magnetic field are controlled according to the data to be written, and the magnetic field and auxiliary energy are applied together to the strip information storage layer 20 to change the magnetization direction of one or more ferromagnetic layers 21 within the strip information storage layer 20. The magnetic tape is moved so that the strip information storage layer 20 passes through the magnetic field write head 40, thereby writing the data to be written into the ferromagnetic layers 21. Furthermore, by miniaturizing the area of ​​the laser-heated hot head or the oscillator, the state of a portion of the magnetic moment in the storage cell can be selectively changed to achieve multi-bit storage in a single storage cell. Figure 3As shown, the magnetic field generating device generates a vertical magnetic field and generates a small amount of energy through the energy auxiliary device 41, reducing the magnetic field strength of the coercive field of the magnetic moment in the second region. This causes the vertical magnetization direction of the multilayer ferromagnetic layers 21 in the first region to change from vertically downward to vertically upward. Therefore, the first storage cell on the left includes at least two ferromagnetic layers 21 with a vertically upward magnetization direction and three ferromagnetic layers 21 with a vertically downward magnetization direction from top to bottom. Then, the magnetic field write head 40 writes to each of the second storage cells on the left, enhancing the energy generated by the energy auxiliary device 41, increasing the size of the second region, thereby reducing the magnetic field strength of the coercive field of the magnetic moment in a larger area of ​​the first region. This causes the magnetization direction of more ferromagnetic layers 21 to reverse. The magnetization direction of the ferromagnetic layers 21 in the second storage cell on the left changes to vertically upward from top to bottom. Since the proportion of different magnetization directions of the ferromagnetic layers corresponding to the first and second storage cells on the left is different, the data storage states represented by the first and second storage cells on the left are different. By altering the energy generated by the energy-assisting device 41, the magnetic field strength of the coercive field of the magnetic moments of the multilayer ferromagnetic layer 21 can be reduced, making it easier for the magnetic field generator to reverse the magnetization direction of the ferromagnetic layer 21. This allows for data writing and polymorphic storage of the storage unit by utilizing the perpendicular magnetic anisotropy of the multilayer ferromagnetic layer 21. Combined with... Figure 4 As shown, the magnetic field generating device generates an in-plane magnetic field and generates energy through the energy auxiliary device 41 to reduce the magnetic field strength of the coercive field of the magnetic moment in the second region, thereby changing the in-plane magnetization direction of the multilayer ferromagnetic layer 21 in the first region. Thus, the in-plane magnetic anisotropy of the multilayer ferromagnetic layer 21 is used to realize the data writing and polymorphic storage of the storage unit.

[0067] Thus, in terms of writing, the magnetic field write head 40 includes two parts: a magnetic field generating part, namely a magnetic field generating device, used to generate a magnetic field in the vertical direction and / or in-plane direction within a first region, the first region including the effective area of ​​the energy assist device 41. When the magnetic field generated by the magnetic field generating device cannot overcome the coercive field of the magnetic moment of the ferromagnetic layer 21, the energy assist device 41 can be activated to reduce the coercive field of the magnetic moment of the adjacent minimal region to below the magnetic field strength of the magnetic field generated by the magnetic field generating device, thereby realizing the writing of data to the adjacent ferromagnetic layer 21.

[0068] Optionally, the magnetic recording device also includes a controller. The controller is configured to adjust the energy level of the energy assist device 41 according to the data to be written when polymorphic writing is performed to the strip information storage layer 20 through the magnetic field write head 40, so as to reverse the magnetization direction of the ferromagnetic layer 21 of the target layer number.

[0069] In this embodiment of the disclosure, polymorphic writing to the strip information storage layer 20 via the magnetic field write head 40 includes: activating the magnetic field generator to generate a magnetic field, and activating the energy assist device 41 to reduce the magnetic field strength of the coercive field of the magnetic moment of the ferromagnetic layer 21 that needs to be reversed in magnetization direction.

[0070] In this embodiment of the disclosure, adjusting the energy level of the energy assist device 41 according to the data to be written to flip the magnetization direction of the ferromagnetic layer 21 of the target number of layers includes: determining the target number of ferromagnetic layers 21 whose magnetization direction needs to be flipped according to the data to be written; determining the target energy level of the energy assist device 41 according to the target number of layers; adjusting the energy level of the energy assist device 41 to the target energy level to flip the ferromagnetic layer 21 of the target number of layers, thereby realizing polymorphic writing.

[0071] Thus, when writing through the magnetic field write head 40, by adjusting the energy level of the energy assist device 41, the range of the second region of the energy assist device 41 can be changed, thereby reversing the magnetization direction of the ferromagnetic layer 21 in the second region, and realizing the polymorphic data writing of the strip information storage layer 20.

[0072] The foregoing description and accompanying drawings fully illustrate embodiments of the present disclosure to enable those skilled in the art to practice them. Other embodiments may include structural and other changes. The embodiments represent only possible variations. Individual components and functions are optional unless explicitly required, and the order of operation may vary. Parts and features of some embodiments may be included or substituted for parts and features of other embodiments. Embodiments of the present disclosure are not limited to the structures described above and shown in the accompanying drawings, and various modifications and changes may be made without departing from its scope. The scope of the present disclosure is limited only by the appended claims.

Claims

1. A magnetic recording device, characterized in that, include: Substrates, including bases made of flexible materials; The strip-shaped information storage layer includes multiple ferromagnetic layers made of ferromagnetic material and multiple spacer layers made of non-magnetic material; wherein the spacer layers are located between the ferromagnetic layers, and the ferromagnetic layers and spacer layers are alternately stacked on the substrate. The substrate also includes: At least one coating layer is disposed on the lower surface of the substrate; The strip information storage layer includes: Multiple storage units, each of which is a strip of information storage layer of a set length; Each storage cell represents its data storage state by the distribution ratio of the magnetization direction of its corresponding ferromagnetic layer. Also includes: The magnetic field write head includes a magnetic field generating device and an energy auxiliary device. The magnetic field generating device is used to generate a vertical or in-plane magnetic field in a first region of the strip-shaped information storage layer, and the energy auxiliary device is used to reduce the magnetic field strength of the coercive field of the magnetic moment in a second region of the strip-shaped information storage layer; wherein, the first region includes the second region. Also includes: The controller is configured to adjust the energy level of the energy-assisted device according to the data to be written when polymorphic writing is performed to the strip information storage layer via the magnetic field write head, so as to reverse the magnetization direction of the ferromagnetic layer of the target layer number.

2. The device according to claim 1, characterized in that, The magnetization direction of the ferromagnetic layer includes the vertical direction and / or the in-plane direction.

3. The device according to claim 1, characterized in that, The easy magnetization direction of the ferromagnetic layers in a single memory cell is the same.

4. The device according to any one of claims 1 to 3, characterized in that, Also includes: At least one isolation layer is disposed between the substrate and the strip information storage layer to reduce the energy transferred to the substrate during the writing process.

5. The device according to any one of claims 1 to 3, characterized in that, Also includes: At least one seed layer is disposed between the substrate and the strip information storage layer.

6. A magnetic storage device, characterized in that, include: The magnetic recording apparatus as described in any one of claims 1 to 5.

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