High-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection and its applications

Abstract

The high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection of the present invention and its application include a silicon substrate, a photosensitive region, and chromium / gold metal electrodes provided at both ends of the photosensitive region. The photosensitive region is a molybdenum disulfide / black phosphorus heterojunction region formed on the silicon substrate. The molybdenum disulfide / black phosphorus heterojunctions are integrated on the substrate in a side-by-side and spaced arrangement to form a 1×8 linear array. Among them, the chromium / gold metal electrode at one end is only in contact with molybdenum disulfide, and the chromium / gold metal electrode at the other end is only in contact with black phosphorus. The high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection of the present invention provides a highly sensitive and highly uniform room-temperature mid-wave infrared van der Waals heterojunction linear detector.

Description

Technical Field

[0001] The present invention belongs to the technical field of mid-wave infrared signal detection, and particularly relates to a high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection and its application. Background Art

[0002] Room-temperature mid-wave infrared detectors can perform passive imaging detection under non-cooling conditions. This type of detector does not rely on a cooling system and has the advantages of low power consumption, miniaturization, and integration. The passive imaging detection ability enables the detector to directly detect the infrared radiation signal from the target object itself without relying on an external illumination source, and has the advantages of all-weather operation and strong concealment. To improve the passive imaging efficiency of the detector, an effective method is to increase the number of pixels of the detection device. For a single-pixel device, to achieve imaging of the target object, it is necessary to sequentially scan the single-pixel device in a two-dimensional plane, which takes a long time and has a slow imaging speed. Further, increasing the number of pixels in one-dimensional direction forms a linear detector. During imaging, only the linear detector needs to be scanned in one dimension in the direction perpendicular to the line array, which can shorten the imaging time and achieve fast imaging of the target. Therefore, it is of great significance to prepare a room-temperature mid-wave infrared linear detector with passive imaging detection ability.

[0003] There are no dangling bonds on the surface of van der Waals layered materials, which have the characteristics of atomic-thin thickness, high mobility, and strong light absorption. Detectors based on van der Waals materials exhibit the performance of low dark current, fast response, low noise, and high sensitivity, and show obvious advantages in the field of room-temperature infrared optoelectronic detection. Currently, the methods for preparing infrared multi-pixel detectors include wet transfer, thermal evaporation, magnetron sputtering, etc.

[0004] The method of large-area wet transfer of transition metal chalcogenides can realize the preparation of wafer-scale multi-pixel devices. On the one hand, the photosensitive materials used in the preparation of such devices are usually few-layer two-dimensional materials, resulting in low light absorption efficiency; on the other hand, the photosensitive materials are wide-bandgap materials, and the detection band can only cover short-wave infrared or even near-infrared, which is not suitable for mid-wave infrared detection. The materials prepared by thermal evaporation and magnetron sputtering methods are polycrystalline, and the materials have defects and poor uniformity, resulting in a decrease in mobility and an increase in the probability of carrier capture, manifested as slow device response speed, low detectivity, and low uniformity.

[0005] Therefore, how to synchronously solve the problems of poor consistency and poor interface contact quality of each pixel in the multi-pixel array of room-temperature mid-wave infrared detectors, as well as the problem of irregular arrangement of each pixel, and provide a high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection and its application are technical problems that need to be urgently solved by those skilled in the art. Summary of the Invention

[0006] The first object of the present invention is to provide a highly uniform room-temperature mid-wave infrared linear detector for passive imaging detection in view of the problems in the prior art.

[0007] To achieve the above object, the present invention adopts the following technical solutions:

[0008] A highly uniform room-temperature mid-wave infrared linear detector for passive imaging detection, characterized in that it includes a silicon substrate, a photosensitive region, and chromium / gold metal electrodes provided at both ends of the photosensitive region. The photosensitive region is a molybdenum disulfide / black phosphorus heterojunction region formed on the silicon substrate. The molybdenum disulfide / black phosphorus heterojunctions are integrated on the substrate in a side-by-side and spaced arrangement to form a 1×8 linear array. Among them, one end of the chromium / gold metal electrode is only in contact with molybdenum disulfide, and the other end of the chromium / gold metal electrode is only in contact with black phosphorus. It is prepared by the following steps:

[0009] S1, Mechanically exfoliate the first single-crystal two-dimensional material MoS2.

[0010] S2, Transfer the first single-crystal two-dimensional material MoS2 to PDMS.

[0011] S3, Transfer the PDMS sheet pasted with the first single-crystal two-dimensional material MoS2 to the first silicon wafer to obtain the first single-crystal two-dimensional material MoS2 located on the first silicon wafer.

[0012] S4, Etch the first single-crystal two-dimensional material MoS2.

[0013] S5, Transfer the etched first single-crystal two-dimensional material MoS2 to the second silicon wafer.

[0014] S6, Repeat steps S1 - S2 to prepare a PDMS sheet pasted with the narrow-bandgap single-crystal two-dimensional material BP.

[0015] S7, Place the PDMS sheet obliquely, lower the PDMS sheet until it stops before one side of the narrow-bandgap single-crystal two-dimensional material BP contacts the first single-crystal two-dimensional material MoS2 in step S5. Heat the second silicon wafer. The obliquely placed PDMS sheet expands due to heat, driving the narrow-bandgap single-crystal two-dimensional material BP to gradually cover and contact the single-crystal two-dimensional material from one side to the other side. Maintain the temperature of the second silicon wafer constant until the first single-crystal two-dimensional material MoS2 and the narrow-bandgap single-crystal two-dimensional material BP are completely adhered together to form a large-size uniform heterojunction without bubbles, residues, and with intact materials.

[0016] S8, After the second silicon wafer is cooled to room temperature, the PDMS sheet shrinks, and lift the PDMS sheet to obtain a molybdenum disulfide / black phosphorus heterojunction located on the second silicon wafer.

[0017] S9, Prepare chromium / gold metal electrodes at both ends of the molybdenum disulfide / black phosphorus heterojunction.

[0018] In S10, the molybdenum disulfide / black phosphorus heterojunction is divided into multiple pixel units from the same single crystal and having a uniform heterojunction interface through an etching process, forming a 1×8 line array structure with consistent optoelectronic response and high detectivity.

[0019] While adopting the above technical solution, the present invention can also adopt or combine the following technical solutions:

[0020] As a preferred technical solution of the present invention: in step S4, the etched first single-crystal two-dimensional material MoS2 is square.

[0021] As a preferred technical solution of the present invention: in step S5, the etched first single-crystal two-dimensional material MoS2 is picked up by a PPC thin film and transferred onto a second silicon wafer to obtain a two-dimensional material MoS2 sample located on the second silicon wafer.

[0022] As a preferred technical solution of the present invention: in step S7, the included angle between the obliquely placed PDMS thin sheet and the first single-crystal two-dimensional material MoS2 is 5°. After the temperature of the second silicon wafer is slowly heated to 50 °C, the temperature is kept constant until the heterojunction is formed.

[0023] As a preferred technical solution of the present invention: step S9 specifically includes spin-coating PMMA on the second silicon wafer in step S8 and exposing electrode windows on the molybdenum disulfide / black phosphorus heterojunction by electron beam lithography, preparing chromium / gold metal electrodes by thermal evaporation, and soaking in acetone to remove PMMA.

[0024] As a preferred technical solution of the present invention: step S10 specifically includes: spin-coating PMMA on the second silicon wafer and exposing an etching window by electron beam lithography, removing the exposed area of the heterojunction by reactive ion etching, soaking in acetone to remove PMMA, and forming a room-temperature mid-wave infrared van der Waals heterojunction linear detector.

[0025] As a preferred technical solution of the present invention: an isolation layer is covered on the 1×8 linear array of the detector to protect the molybdenum disulfide / black phosphorus heterojunction region.

[0026] The second object of the present invention is to provide an application of a highly uniform room-temperature mid-wave infrared linear detector for passive imaging detection in view of the problems in the prior art.

[0027] For this reason, the above object of the present invention is achieved by the following technical solution:

[0028] The application of a highly uniform room-temperature mid-wave infrared linear detector for passive imaging detection is characterized in that it is applied to imaging detection.

[0029] Compared with the prior art, the present invention has the following beneficial effects:

[0030] Passive imaging detection high-uniformity room-temperature mid-wave infrared linear detector and its application of the present invention. A temperature-assisted method is used to prepare a room-temperature mid-wave infrared van der Waals heterojunction linear detector. During the preparation process, by adjusting the temperature of the silicon wafer and the tilt angle of the PDMS, the temperature of the inclined PDMS is further regulated. The precise transfer and contact of two-dimensional materials are realized by means of the small-angle tilt of the PDMS thin sheet and the expansion and contraction characteristics of the PDMS, and the preparation of a narrow-bandgap two-dimensional material heterojunction with a large-size, high-quality and uniform heterointerface is achieved. The problems of poor consistency among pixels, poor interface contact quality, and irregular pixel arrangement in the multi-pixel array are synchronously solved, so as to be able to prepare a room-temperature mid-wave infrared van der Waals heterojunction linear detector with high sensitivity and high uniformity, improve the responsivity of the detector, enhance the stability and reliability of the detector, increase the operating temperature of the detector, realize mid-wave infrared detection at room temperature, thereby expanding its application range under various environmental conditions, improving the imaging quality, and enhancing the overall performance of the detector.

[0031] In the preparation of the passive imaging detection high-uniformity room-temperature mid-wave infrared linear detector of the present invention, a temperature-assisted PDMS thin sheet is used to prepare a large-area van der Waals layered structure, which has advantages such as avoiding contamination, precisely controlling the contact area, and compatibility. The PDMS contacts the silicon wafer at a small angle, and the two-dimensional material is slowly attached to the silicon wafer through the thermal expansion of the PDMS, avoiding problems such as material wrinkles and bubbles caused by manually or mechanically driving the PDMS to press down. By utilizing the characteristic of the inclined PDMS thin sheet expanding when heated, the contact area is slowly expanded from one side to the other side along a specific direction until the two-dimensional material is completely covered. This step-by-step covering method helps to reduce the generation of bubbles and wrinkles, and can improve the quality and uniformity of the van der Waals vertical structure while preparing a large-area narrow-bandgap material heterojunction, ensuring that the contact between the van der Waals vertical structures is uniform and defect-free.

[0032] The preparation method of the linear array of the passive imaging detection high-uniformity room-temperature mid-wave infrared linear detector provided by the present invention uses a temperature-assisted method to prepare a narrow-bandgap two-dimensional material heterojunction with a large-size, high-quality and uniform heterointerface, so as to ensure the consistency of each pixel in the multi-pixel array and the performance of the overall device, promote the effective transport of carriers and improve the optoelectronic response performance of the device, and realize a high-uniformity room-temperature mid-wave infrared linear detector, which has broad application prospects in many fields such as microfluidic chip manufacturing, flexible electronic devices, medical devices, electronic appliances, environmental monitoring, and tissue engineering. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a flowchart of the preparation method of the passive imaging detection high-uniformity room-temperature mid-wave infrared linear detector of the invention;

[0034] Figure 2Schematic diagram of the preparation method of a highly uniform room-temperature mid-wave infrared linear detector for passive imaging detection of the present invention;

[0035] Figure 3 Schematic diagram of the structure of a highly uniform room-temperature mid-wave infrared linear detector for passive imaging detection of the present invention;

[0036] Figure 4 Schematic diagram of the structure of the molybdenum disulfide / black phosphorus heterojunction region of the present invention;

[0037] Figure 5 Schematic diagram of the imaging detection application of a highly uniform room-temperature mid-wave infrared linear detector for passive imaging detection of the present invention;

[0038] Figure 6 Response time diagram of a highly uniform room-temperature mid-wave infrared linear detector for passive imaging detection of the present invention;

[0039] Figure 7 Detectivity diagram of a highly uniform room-temperature mid-wave infrared linear detector for passive imaging detection of the present invention;

[0040] Figure 8 is Figure 5 Comparison diagram of the imaging diagram obtained in [] with the unit imaging diagram in the prior art;

[0041] In the attached drawings, chromium / gold metal electrode 1; first single-crystal two-dimensional material MoS₂ 2; narrow-bandgap single-crystal two-dimensional material BP 3; silicon substrate 4; highly uniform room-temperature mid-wave infrared linear detector 100 for passive imaging detection. Detailed description of the specific implementation mode

[0042] The present invention will be further described in detail with reference to the attached drawings and specific embodiments.

[0043] The highly uniform room-temperature mid-wave infrared linear detector for passive imaging detection of the present invention includes a silicon substrate, a photosensitive region, and chromium / gold metal electrodes provided at both ends of the photosensitive region. The photosensitive region is a molybdenum disulfide / black phosphorus heterojunction region formed on the silicon substrate. The molybdenum disulfide / black phosphorus heterojunctions are integrated on the substrate in a side-by-side and spaced arrangement to form a 1×8 linear array. Among them, one end of the chromium / gold metal electrode is only in contact with molybdenum disulfide, and the other end of the chromium / gold metal electrode is only in contact with black phosphorus. It is prepared by the following steps:

[0044] S1, mechanically exfoliate the first single-crystal two-dimensional material;

[0045] S2, transfer the first single-crystal two-dimensional material to PDMS to obtain the first single-crystal two-dimensional material pasted with a PDMS thin film;

[0046] S3. Transfer the first single-crystalline two-dimensional material pasted on the PDMS sheet to the first silicon wafer to obtain the first single-crystalline two-dimensional material located on the first silicon wafer;

[0047] S4. Etch the first single-crystalline two-dimensional material;

[0048] S5. Transfer the etched first single-crystalline two-dimensional material to the second silicon wafer;

[0049] S6. Repeat steps S1 - S2 to prepare a PDMS sheet pasted with a single-crystalline two-dimensional material having a narrow bandgap;

[0050] S7. Adjust the angle of the PDMS sheet until the included angle between the single-crystalline two-dimensional material with a narrow bandgap and the first single-crystalline two-dimensional material in step S5 is 5°. Lower the PDMS sheet until it stops before the single-crystalline two-dimensional material with a narrow bandgap contacts the first single-crystalline two-dimensional material. Heat the second silicon wafer. The PDMS sheet expands due to heat and drives the single-crystalline two-dimensional material with a narrow bandgap to slowly cover and contact the single-crystalline two-dimensional material from one side to the other along a specific direction. Keep the temperature of the second silicon wafer constant to maintain the contact state between the PDMS sheet and the two-dimensional material until a heterojunction is formed between the first single-crystalline two-dimensional material and the single-crystalline two-dimensional material with a narrow bandgap; wherein the specific direction refers to the small-angle tilt direction of the PDMS sheet.

[0051] S8. Slowly lower the second silicon wafer to room temperature. The PDMS sheet shrinks. Lift the PDMS sheet to obtain a large-size heterojunction of the first single-crystalline two-dimensional material and the single-crystalline two-dimensional material with a narrow bandgap located on the second silicon wafer.

[0052] S9. Spin-coat PMMA on the silicon wafer in step S8 and use electron beam lithography to expose the electrode window on the heterojunction. Prepare the electrodes by thermal evaporation, and soak in acetone to remove PMMA.

[0053] S10. Spin-coat PMMA on the silicon wafer in step S9 and use electron beam lithography to expose the etching window. Remove the exposed area of the MoS2 / BP heterojunction by reactive ion etching, soak in acetone to remove PMMA, and form a room-temperature mid-wave infrared van der Waals MoS2 / BP heterojunction linear detector.

[0054] The beneficial effects of the present invention are as follows: The high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection of the present invention solves the problems in the prior art that large-size narrow-bandgap single-crystal two-dimensional materials cannot be realized, BP cannot be used to prepare large-size single crystals, and it is difficult to form linear or array devices through its preparation method. By making PDMS contact the silicon wafer at a small angle, and through the thermal expansion of PDMS, the two-dimensional material is slowly adhered from one side to the other side along a specific direction onto the silicon wafer, avoiding problems such as material wrinkles and bubbles caused by manual or mechanical driving of PDMS to press down. Through this method, a high-sensitivity and high-uniformity room-temperature mid-wave infrared van der Waals heterojunction linear detector can be prepared.

[0055] In the present invention, PDMS has good chemical stability and biocompatibility. It can be compatible with a variety of two-dimensional materials, including different material combinations such as MoS2 / BP heterojunctions, providing the possibility for the preparation of multifunctional van der Waals heterostructures. Using PDMS-assisted dry transfer, through the good stability of the PDMS material, by slowly raising and lowering its temperature, the expansion and contraction of the PDMS thin film are precisely controlled to achieve precise manipulation and transfer of the two-dimensional material. In addition, by adjusting the tilt angle of PDMS, during the expansion process, the contact area slowly expands from one side to the other side along a specific direction, which can avoid the generation of two-dimensional materials and the presence of bubbles at the heterojunction interface. Example 1

[0056] As Figures 1 - 4 shown, a high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection of the present invention includes a silicon substrate 4, a photosensitive region, and chromium / gold metal electrodes 1 provided at both ends of the photosensitive region. The photosensitive region is a molybdenum disulfide / black phosphorus heterojunction region formed on the silicon substrate. The molybdenum disulfide / black phosphorus heterojunctions are integrated on the substrate in a side-by-side and spaced arrangement to form a 1×8 linear array. Among them, the chromium / gold metal electrode at one end only contacts molybdenum disulfide 2, and the chromium / gold metal electrode at the other end only contacts black phosphorus 3. A high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection of the present invention is prepared through the following steps:

[0057] In step S1, it specifically includes the following steps:

[0058] S1.1, Use a scalpel to cut PDMS to obtain a PDMS thin film of 20 mm×8 mm×160 μm. Place the PDMS thin film in the middle of a clean glass slide, and one end of the PDMS is fixed with blue tape. Among them, PDMS, that is, polydimethylsiloxane, is a synthetic silicone rubber commonly used in laboratory and industrial applications

[0059] S1.2, Take a certain number of single-crystal flakes of two-dimensional MoS2 material and place them on the blue tape. Fold and paste the blue tape, repeat the folding and pasting 5 - 10 times, so that the first single-crystal two-dimensional MoS2 material covers a certain area on the blue tape.

[0060] In step S2, it specifically includes the following steps:

[0061] S2.1, Paste the blue tape with the first single-crystal two-dimensional MoS2 material on the PDMS flake in step S1, gently press it with the thumb for 1 minute, and then quickly tear off the blue tape with the two-dimensional material from one end where the blue tape is fixed.

[0062] S2.2, Directly observe the two-dimensional material sample on the PDMS flake under the microscope, select the two-dimensional material sample with regular shape and appropriate thickness, and then use a scalpel to cut and remove the excess PDMS near the sample.

[0063] Step S3, Paste the remaining PDMS flake with the first single-crystal two-dimensional MoS2 material sample on a clean first silicon wafer to obtain a larger-sized first single-crystal two-dimensional MoS2 material on the first silicon wafer.

[0064] In step S4, spin-coat PMMA on the first silicon wafer and use electron beam lithography to expose the window of the part to be etched, and remove the exposed area through reactive ion etching, leaving a rectangular first single-crystal two-dimensional MoS2 material sample. Among them, PMMA, the full name is polymethyl methacrylate, is a kind of polymer with wide applications.

[0065] In step S5, use the PPC thin film to pick up the etched rectangular two-dimensional material sample and transfer it to a new second silicon wafer to obtain a rectangular two-dimensional material sample on the second silicon wafer. Among them, PPC is poly(propylene carbonate), which is a kind of polymer material.

[0066] In step S6, copy steps S1 - S2, and the two-dimensional material used in the process is changed to a single-crystal two-dimensional material BP with a certain narrow bandgap. Among them, BP refers to black phosphorus, which is a two-dimensional semiconductor material.

[0067] In step S7, slowly approach the remaining PDMS flake with the narrow-bandgap two-dimensional material sample to the second silicon wafer prepared in step S5 at an inclination angle of 5°, and at the same time align the narrow-bandgap single-crystal two-dimensional material BP with the rectangular two-dimensional material sample in step S5.

[0068] Slowly lower the inclined PDMS flake mechanically, and stop descending before the contact area covers the aligned two-dimensional material sample.

[0069] Slowly increase the temperature of the second silicon wafer to 50 °C, and then keep the temperature constant. When the temperature rises, due to the thermal expansion of the PDMS sheet, the contact area slowly expands from one side to the other in one direction until the contact area completely covers the single-crystalline two-dimensional material BP with a narrow bandgap. After reaching the required temperature, the temperature needs to be kept constant to maintain the contact state between the PDMS sheet and the two-dimensional material until the heterojunction is formed.

[0070] Slowly increase the temperature of the silicon wafer to 50 °C. During this process, the PDMS sheet will expand due to heat. Since the thermal expansion coefficient of PDMS is usually 150 - 200 ppm / K, this means that for every 1 °C increase in temperature, the length or volume of PDMS will increase by 0.15% to 0.2%. As the temperature rises, the expansion of the PDMS sheet will cause the contact area to slowly expand until it completely covers the single-crystalline two-dimensional material BP with a narrow bandgap. This step is crucial for ensuring the quality of the heterojunction because it needs to ensure uniform and defect-free contact between MoS2 and BP.

[0071] Although current bottom-up growth methods can achieve the growth of large-area two-dimensional sheets, seamlessly merging these sheets to form a large-area continuous film with well-controlled layer thickness and lattice orientation remains a challenge. In this application, the temperature-assisted PDMS sheet helps to solve these problems and can achieve high-quality and uniform interfaces while preparing heterojunctions of large-area narrow-bandgap materials.

[0072] In step S8, slowly lower the temperature to room temperature and slowly lift the PDMS sheet to obtain a large-size and uniform two-dimensional material heterojunction sample on the silicon wafer.

[0073] In steps S9 and S10, spin-coat PMMA on the second silicon wafer and use electron beam lithography to expose the electrode window on the heterojunction. Prepare the electrodes by thermal evaporation and soak in acetone to remove PMMA. Spin-coat PMMA on this second silicon wafer and use electron beam lithography to expose the etching window, remove the exposed area of the heterojunction by reactive ion etching, and soak in acetone to remove PMMA to form a room-temperature mid-wave infrared van der Waals heterojunction linear detector.

[0074] As Figure 6 、 Figure 7 shown, the high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection of the present invention has a response speed of 44 μs and a detectivity of 4×109 cm Hz1 / 2 W-1, with the response time and detectivity basically remaining the same and having high uniformity.

[0075] As Figure 5 shown, Figure 8As shown, by performing pushbroom imaging on the high-uniformity room-temperature mid-wave infrared linear detector of the present invention at room temperature in a direction perpendicular to the linear array, a target area image can be directly obtained. Through multi-line pushbroom detection, a larger target image can be obtained. By comparing the target image obtained by detecting with this linear array device with the target image obtained by detecting with a single-pixel device, the root mean square difference is 14.27, further proving that the device has high uniformity.

[0076] The above specific embodiments are used to explain the present invention. They are only the preferred embodiments of the present invention and do not limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and scope of the claims of the present invention fall within the protection scope of the present invention.

Claims

1. Passive imaging detection high-uniformity room-temperature mid-wave infrared linear detector, characterized in that: It includes a silicon substrate, a photosensitive region, and chromium / gold metal electrodes provided at both ends of the photosensitive region. The photosensitive region is a molybdenum disulfide / black phosphorus heterojunction region formed on the silicon substrate. The molybdenum disulfide / black phosphorus heterojunctions are integrated on the substrate in a side-by-side and spaced arrangement to form a 1×8 linear array. Among them, one end of the chromium / gold metal electrode is only in contact with molybdenum disulfide, and the other end of the chromium / gold metal electrode is only in contact with black phosphorus. The linear array is prepared through the following steps: S1, Mechanically exfoliate the first single-crystal two-dimensional material MoS2. S2, Transfer the first single-crystal two-dimensional material MoS2 to PDMS. S3, Transfer the PDMS sheet pasted with the first single-crystal two-dimensional material MoS2 to the first silicon wafer to obtain the first single-crystal two-dimensional material MoS2 located on the first silicon wafer. S4, Etch the first single-crystal two-dimensional material MoS2. S5, Transfer the etched first single-crystal two-dimensional material MoS2 to the second silicon wafer. S6, Repeat steps S1 - S2 to prepare a PDMS sheet pasted with the single-crystal two-dimensional material BP with a narrow bandgap. S7, Place the PDMS sheet obliquely, lower the PDMS sheet until it stops before one side of the single-crystal two-dimensional material BP with a narrow bandgap contacts the first single-crystal two-dimensional material MoS2 in step S5. Heat the second silicon wafer. The obliquely placed PDMS sheet expands due to heat, driving the single-crystal two-dimensional material BP with a narrow bandgap to gradually cover and contact the first single-crystal two-dimensional material MoS2 from one side to the other side. Maintain the temperature of the second silicon wafer constant until the first single-crystal two-dimensional material MoS2 and the single-crystal two-dimensional material BP with a narrow bandgap are completely adhered together to form a large-size uniform heterojunction without bubbles, residues, and with intact materials. S8, After the second silicon wafer is cooled to room temperature, the PDMS sheet shrinks. Lift the PDMS sheet to obtain the molybdenum disulfide / black phosphorus heterojunction located on the second silicon wafer. S9, Prepare chromium / gold metal electrodes at both ends of the molybdenum disulfide / black phosphorus heterojunction. S10, The molybdenum disulfide / black phosphorus heterojunction is divided into multiple pixel units from the same single crystal and having a uniform heterojunction interface through an etching process to form a 1×8 linear array structure with consistent photoelectric response and high detection rate.

2. The high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection according to claim 1, characterized in that: In step S4, the etched first single-crystal two-dimensional material MoS2 is square.

3. The high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection according to claim 1, wherein: In step S5, use a PPC film to pick up the etched first single-crystal two-dimensional material MoS2 and transfer it to the second silicon wafer to obtain a two-dimensional material MoS2 sample located on the second silicon wafer.

4. The high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection according to claim 1, wherein: In step S7, the included angle between the obliquely placed PDMS sheet and the first single-crystal two-dimensional material MoS2 is 5°. After the temperature of the second silicon wafer is slowly heated to 50 °C, keep the temperature constant until the heterojunction is formed.

5. The high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection according to claim 1, characterized in that: Step S9 specifically includes: spin-coating PMMA on the second silicon wafer in step S8 and using electron beam lithography to expose electrode windows on the molybdenum disulfide / black phosphorus heterojunction, preparing chromium / gold metal electrodes through thermal evaporation, and soaking in acetone to remove PMMA.

6. The high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection according to claim 5, wherein: Step S10 specifically includes: spin-coating PMMA on the second silicon wafer, exposing an etching window by electron beam lithography, removing the exposed area of the heterojunction by reactive ion etching, soaking in acetone to remove PMMA, and forming a room-temperature mid-wave infrared van der Waals heterojunction linear detector.

7. The high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection according to claim 1, wherein: The detector covers an isolation layer on a 1×8 linear array to protect the molybdenum disulfide / black phosphorus heterojunction region.

8. Use of the high-uniformity room-temperature mid-wave infrared linear detector for passive imaging detection according to any one of claims 1-7, characterized in that: It is applied to imaging detection.

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