An in-situ self-oxidized grating heterosynaptic transistor and its preparation method and application

Abstract

The present invention discloses an in-situ self-oxidized grating heterosynaptic transistor and its preparation method and application, which belongs to the technical field of high-performance sensing and sensing-storage-computing integration. The present invention includes a bottom gate substrate, a bottom gate dielectric layer and a heterosynaptic structure located on the bottom gate dielectric layer are provided on the bottom gate substrate, the heterosynaptic structure includes a bismuth oxygen selenium channel layer, a bismuth oxygen selenite barrier blocking layer and a perovskite light absorption layer, and source and drain electrodes are provided on both sides of the bismuth oxygen selenium channel layer, wherein the valence band energy level difference between the perovskite light absorption layer and the bismuth oxygen selenite barrier blocking layer is smaller than the conduction band energy level difference, so that the tunneling barrier of holes is smaller than the tunneling barrier of electrons, and the photogenerated holes in the perovskite tunnel into the bismuth oxygen selenium channel under visible light, generating a negative response of the light signal. However, under infrared light, since the absorption range of perovskite ends at 800 nm, the photogenerated carriers are generated in the bismuth oxygen selenium channel with a narrow band gap (0.8 eV), increasing the electron concentration in the channel and generating a positive response of the light signal.

Description

Technical Field

[0001] The present invention relates to a method for realizing visible-near infrared image fusion based on in-situ self-oxidized dual photogate for broadband light fusion, and belongs to the technical field of high-performance sensing and sensing-storage-computing integration. Background Art

[0002] In traditional machine vision, due to the separation of perception, storage and computing, extensive data transmission results in huge bandwidth requirements and high latency, resulting in power consumption waste and reduced efficiency. Neuromorphic sensors are envisioned to capture and preprocess visual information directly at the edge, which can reduce unnecessary data transmission and energy consumption. Neuromorphic devices have in-situ data processing capabilities, which is essential for effectively acquiring information in a multi-environment to facilitate accurate target recognition and real-time tracking. It is worth noting that bipolar wide spectral response is also critical for neuromorphic sensors. Visible light can usually obtain high-resolution images when there is sufficient light, but imaging is insufficient in low light or at night. Near-infrared light is an effective medium for night imaging, and it is not easily affected by glare from direct sunlight or reflections. However, it faces the problems of low resolution and blurred imaging edges. Therefore, by bipolar differential fusion of visible and near-infrared images, the effects of glare and reflection can be reduced, ensuring that the device can provide clearer images even under challenging lighting conditions. However, existing research on devices based on bipolar response usually requires the application of continuous positive and negative gate voltages. In addition to increasing power consumption, due to the need for frequent switching of positive and negative voltages, multi-band information at the same time can only be input separately in a serial manner. The sensing information cannot be stored in situ, and thus post-processing tasks such as in-situ multi-band image fusion and complex image recognition cannot be achieved. Therefore, there is an urgent need to explore new materials and devices and design an electronic device unit with multi-band selective response within a wide spectrum and in-situ post-processing of sensing data. Summary of the invention

[0003] In order to realize the in-situ fusion and storage of visible-near-infrared dual-band image information within the device, the present invention proposes an in-situ self-oxidation grating heterosynaptic transistor device, which can store light information in situ in the synaptic device to realize wavelength-dependent bipolar light response. The realization of bipolar light response does not require gate voltage regulation, avoiding energy consumption and power consumption and delay caused by serial input of multi-band information.

[0004] The technical solution provided by the present invention is as follows:

[0005] An in-situ self-oxidized grating heterosynaptic transistor includes a bottom gate substrate, a bottom gate dielectric layer and a heterosynaptic structure located on the bottom gate dielectric layer, the heterosynaptic structure includes a bismuth oxygen selenide channel layer, a bismuth oxygen selenite barrier blocking layer and a perovskite light absorption layer, and source and drain electrodes are provided on both sides of the bismuth oxygen selenide channel layer, wherein the valence band energy level difference between the perovskite light absorption layer and the bismuth oxygen selenite barrier blocking layer is smaller than the conduction band energy level difference, so that the tunneling barrier of holes is smaller than the tunneling barrier of electrons, so that the photogenerated holes in the perovskite tunnel into the bismuth oxygen selenide channel under visible light, generating a negative response of the light signal. In infrared light, since the absorption range of perovskite ends at 800 nm, the photogenerated carriers are mainly generated in the bismuth oxygen selenide channel with a narrow band gap (0.8 eV), increasing the electron concentration in the channel and generating a positive response of the light signal.

[0006] The bottom gate substrate is a silicon substrate containing native defects, the bottom gate dielectric layer is hafnium oxide, the thickness is in the range of 10-20 nm, the thickness of the bismuth selenium oxide channel material is in the range of 5-15 nm, the thickness of the bismuth selenite oxide is in the range of 3-6 nm, the material of the source and drain electrodes is a Ti / Au electrode, the thickness does not exceed 90 nm. The perovskite material can be an organic perovskite, an inorganic perovskite or an organic-inorganic hybrid perovskite, etc., and its thickness is 100-200 nm.

[0007] The present invention further provides a method for preparing an in-situ self-oxidized grating heterojunction transistor, comprising the following steps:

[0008] 1) Atomic layer deposition is used to grow a bottom gate dielectric layer on a silicon substrate;

[0009] 2) Synthesis of two-dimensional bismuth oxide selenium single crystal nanosheets on mica substrate by chemical vapor deposition;

[0010] 3) using polymethyl methacrylate (PMMA) to transfer the two-dimensional bismuth oxide selenium single crystal nanosheet onto the bottom gate dielectric layer;

[0011] 4) Positioning the transferred bismuth oxygen selenide and defining the bismuth oxygen selenide channel layer by electron beam exposure;

[0012] 5) Ar ion etching for channel area separation;

[0013] 6) Define the source and drain electrode regions by electron beam exposure;

[0014] 7) Form source and drain electrodes by electron beam evaporation of Ti / Au metal stack and peeling off;

[0015] 8) Oxidizing the surface of the bismuth oxygen selenide channel layer by an oxygen plasma treatment method to generate a bismuth oxygen selenite barrier layer;

[0016] 9) Preparation of perovskite thin films by antisolvent spin coating.

[0017] Furthermore, the specific parameters of the treatment method in step 8) are: oxygen flow rate is 20-30 sccm, power is 25-30 watts, and treatment time is 7-9 minutes.

[0018] Further provided is an on-chip sensing, storage and computing integrated structure, which is an array composed of a periodic arrangement of in-situ self-oxidized grating heterogeneous transistors.

[0019] The in-situ self-oxidized grating heterojunction transistor of the present invention utilizes the main absorption characteristics of materials under different wavelength bands, combines the self-oxide bismuth selenite oxide of bismuth oxygen selenium and the direct energy band matching of the perovskite layer, and realizes a wavelength-dependent bipolar light response with different positive and negative high responsiveness, that is, under visible light (380 nm-800 nm), due to the high absorption coefficient of perovskite, the photogenerated carriers are mainly generated in this layer, and since the electron barrier between the perovskite and the intermediate layer bismuth oxygen selenite is much larger than the hole barrier, the photogenerated holes in the perovskite can be transferred to the bismuth oxygen selenium, while the electrons are blocked, thereby reducing the carrier concentration in the bismuth oxygen selenium channel, showing a negative photoelectric response. Since the holes are blocked by the barrier, it is difficult to reverse tunnel back to the perovskite, so the light response is non-volatile. Under infrared light (800 nm-1320 nm), since the absorption spectrum of perovskite is cut off at 800 nm, and the broad spectrum absorption range of bismuth selenide includes this band, the photogenerated carriers are directly generated in bismuth selenide, and the channel carrier density increases. At the same time, due to the presence of some unoxidized sites in the intermediate layer of bismuth selenite, the sub-gap state of the interface captures holes and acts as another gate to increase the conductivity of the channel. In particular, the photoresponsivity to 640 nm visible light reaches 1.1× 10 8 A / W; the photoresponsivity to 1320 nm near-infrared light reaches 4.4 ×10 4 A / W, and due to the barrier effect of bismuth selenite, the received optical information has the characteristics of non-volatile, and can maintain its conductivity state greater than 10 3 s. Therefore, the present invention realizes effective enhancement of infrared light response. Based on the non-volatile, self-selected visible light-infrared light bipolar light response, it can effectively suppress glare signals and amplify effective information in a glare environment by parallel acquisition and fusion of multi-band information, and complete target detection in complex scenes.

[0020] The advantages of the present invention are as follows:

[0021] 1) High-mobility semiconductor bismuth oxide selenide is used as the infrared absorption layer and channel layer, high-light absorption semiconductor perovskite is used as the visible light absorption layer, and bismuth oxide selenite barrier is used as the blocking layer. For the first time, the difference in the absorption coefficient and band gap of the two materials is utilized, combined with the band matching of the heterostructure, to realize a self-selective visible-near-infrared bipolar response device, which can simultaneously process visible light and near-infrared light information, and perform pre-processing inside the device to achieve effective information fusion.

[0022] 2) The device has an ultra-high photosensitivity, which is conducive to accurate and complete information collection and processing: Since bismuth selenite is obtained by in-situ oxidation of bismuth selenide, there are some unoxidized sites that can be used as gratings to further enhance the photosensitivity of near-infrared light; the high absorption coefficient of perovskite also enhances the photosensitivity of visible light.

[0023] 3) Due to the presence of the in-situ generated bismuth oxyselenite barrier, the reverse outflow of photogenerated carriers is blocked, so the photoresponse is non-volatile, enabling the device to store optical information in its own sensing unit, avoiding the digital-to-analog conversion and energy consumption of transmitting the received information to the storage unit.

[0024] 4) The device does not require multiple sensors for information collection, and independent feature extraction and fusion post-processing algorithms such as multi-scale transformation and sparse coding, which reduces the bandwidth and power consumption requirements of the system operation. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic diagram of the structure of the in-situ self-oxidized grating heterojunction transistor of the present invention;

[0026] Figure 2~Figure 6 This is a schematic diagram of the process steps for preparing an in-situ self-oxidized grating heterojunction transistor in a specific implementation of the present invention, wherein:

[0027] Figure 2 A step of growing hafnium oxide on a p++ silicon substrate by atomic layer deposition;

[0028] Figure 3 A method for wet-assisted transfer of bismuth selenide grown on a mica substrate using a chemical vapor deposition method using hydrofluoric acid and PMMA;

[0029] Figure 4 The steps of defining the source and drain regions by electron beam exposure and depositing Ti / Au by electron beam evaporation, and then stripping by soaking in acetone solution overnight;

[0030] Figure 5 The step of treating the surface of the prepared bismuth oxygen selenium transistor with an oxygen plasma cleaner to generate bismuth oxygen selenite;

[0031] Figure 6A step of spin coating the perovskite solution on the device structure using an anti-solvent method;

[0032] Figure 7 The current-time variation curve of the device composed of the bismuth oxide selenium material and the perovskite layer under visible light pulses is shown in the step of generating the intermediate layer of the device of the present invention, in which the bismuth oxide selenium material is treated with oxygen plasma for different time periods;

[0033] Figure 8 The current-time variation curve of the device of the present invention under full-band light response;

[0034] Fig. 9 A schematic diagram of the working principle of the sub-selective, wavelength-dependent bipolar photoresponse of the device of the present invention;

[0035] Fig.10 The synaptic plasticity of the device of the present invention under infrared light and visible light is dependent on the time of light pulses;

[0036] Fig.11 The synaptic plasticity of the device of the present invention is dependent on the light pulse intensity and the number of light pulses under infrared light and visible light;

[0037] Fig.12 The multi-level linear conductivity control behavior of the device of the present invention under infrared light and visible light;

[0038] Fig.13 This is a non-volatile retention characteristic diagram of a partial conductivity state of the device controlled by light of the present invention;

[0039] Fig.14 A graph showing the relationship between the fusion current after the device of the present invention responds to infrared light and visible light pulses at the same time and the optical power density of the two wavelength light beams;

[0040] Fig.15 This is a device current mapping diagram after the device array of the present invention is used to identify the three letters of infrared information "P", "K" and "U" containing strong visible light noise;

[0041] Fig.16 A flow chart of using the device array of the present invention for nighttime target detection under glare interference;

[0042] Fig.17 The figure is a precision-recall curve of nighttime target detection under glare interference using the device array of the present invention.

[0043] In the figure: 1—heavily doped silicon bottom gate substrate; 2—hafnium oxide bottom gate dielectric layer; 3—bismuth oxide selenide channel layer; 4—source electrode; 5—drain electrode; 6—bismuth oxide selenite barrier layer; 7—perovskite layer. DETAILED DESCRIPTION

[0044] The following describes in detail an in-situ self-oxidized grating heterosynaptic transistor and visible-near infrared image fusion perception application proposed by the present invention through embodiments in conjunction with the accompanying drawings.

[0045] like Figure 1 As shown, the in-situ self-oxidized grating heterosynaptic transistor of the present invention includes a bottom gate substrate, a bottom gate dielectric layer and a heterosynaptic structure located on the bottom gate dielectric layer are provided on the bottom gate substrate, the heterosynaptic structure includes a bismuth oxygen selenide channel layer, a bismuth oxygen selenite barrier blocking layer and a perovskite light absorption layer, and source and drain electrodes are arranged on both sides of the bismuth oxygen selenide channel layer, wherein the valence band energy level difference between the perovskite light absorption layer and the bismuth oxygen selenite barrier blocking layer is smaller than the conduction band energy level difference thereof.

[0046] The preparation process of the above-mentioned in-situ self-oxidized grating heterosynaptic transistor is as follows:

[0047] 1) Using water and hafnium tetrakis(dimethylamide) as precursors, 20 nm hafnium oxide bottom gate dielectric was grown by atomic layer deposition at 150°C on a p++ silicon substrate. Figure 2 As shown;

[0048] 2) Using bismuth oxide and bismuth selenide as precursors, 10 nm thick two-dimensional bismuth oxide and selenium single crystal nanosheets were synthesized on a fluorophlogopite substrate by chemical vapor deposition.

[0049] 3) Spin-coat a layer of PMMA on the surface of the mica substrate with two-dimensional bismuth oxide selenide nanosheets. The specific process is: spin-coat for 5s at 500rpm, spin-coat for 55s at 3000rpm, and then dry on a 170℃ hot plate for 3min; then soak in a hydrofluoric acid solution to selectively etch the mica for 8h; use ultrapure water to transfer the PMMA film with two-dimensional bismuth oxide selenide nanosheets to the Si / HfO2 substrate, and then dry on a 75℃ hot plate for 1min to remove the moisture in the film; soak in a 75℃ acetone solution for 1h to remove PMMA, blow dry, and then remove the PMMA film. Figure 3 As shown;

[0050] 4) Electron beam exposure is used to define a 1.5 𝜇m wide bismuth oxygen selenium channel and source and drain electrodes. Electron beam evaporation of metal Ti / Au=5 / 45 nm is performed. The remaining photoresist is removed by soaking in acetone overnight to form source and drain electrodes, such as Figure 4 shown.

[0051] 5) Use a plasma cleaning machine to oxidize the surface bismuth oxide and selenium, the power is 20 W, the oxygen flow rate is 30 sccm, and the optimal treatment time is 8 min. Figure 5 shown.

[0052] 6) The perovskite layer was prepared by anti-solvent spin coating at 5000 rpm for 60 s. Figure 6 shown.

[0053] Based on the periodic arrangement of in-situ self-oxidized grating heterosynaptic transistors, an on-chip sensing, storage and computing integrated structure is formed, which receives, fuses and pre-processes visible and near-infrared light information in parallel and stores information. It is applied to target detection in complex environments, such as nighttime glare environments, to improve the accuracy and recall rate of identifying vehicles and pedestrians.

[0054] The device of the present invention is electrically tested by a probe station and a semiconductor parameter analyzer 1500 A, and light of different intensities and durations is applied to the device in combination with devices such as monochromatic lasers of multiple wavelengths and random signal generators.

[0055] like Figure 7 As shown in the figure, the optimal surface treatment of the bismuth oxide selenide channel was tested, and the time for oxidation to bismuth oxide selenite was tested. The current-time changes of the bismuth oxide selenide device under visible light pulses after oxygen plasma treatment for 3, 6, 8, and 10 minutes and the device after the perovskite layer was formed were compared. With the increase of oxidation time, the non-volatility of the photoresponse gradually increased, which is conducive to the in-situ storage of information. However, when the oxidation time exceeded 8 minutes, the current curve of the device began to jitter, indicating that the oxidation treatment at this time reduced the electrical transmission capacity of the channel. Therefore, the treatment time of 8 minutes is the best.

[0056] like Figure 8 As shown in the figure, (a)-(f) are the changes of the device current over time after laser pulses at 380 nm, 532 nm, 640 nm, 785 nm, 980 nm, and 1320 nm. The test shows that the device has a full-band response characteristic of 380-1320 nm, where it shows a negative response of current decrease at 380-800 nm and a positive response of current increase at 800-1320 nm.

[0057] like Fig. 9As shown, the working mechanism of the bipolar device of the present invention that is not gate voltage dependent and wavelength dependent is explained. Figure (a) is a diagram of the device light response mechanism under visible light (380 nm-800 nm). For visible light signals, due to the high absorption coefficient of the perovskite layer, the photogenerated carriers are mainly generated in this layer. Since the electron barrier between the in-situ oxidized bismuth selenite and the perovskite layer is much larger than the hole barrier, the photogenerated holes in the perovskite layer can be quickly transferred to the bismuth selenide, greatly reducing the carrier concentration in the channel, thereby showing a negative photoelectric response. Since the holes are blocked by the barrier, it is difficult to reverse tunnel back to the perovskite layer, so the light response is non-volatile. Figure (b) is a diagram of the device light response mechanism under infrared light (800 nm-1320 nm). For infrared light signals, since the absorption spectrum of perovskite is cut off at 800 nm, and the bismuth selenide band gap is 0.8 eV, it can absorb near-infrared light. Therefore, photogenerated carriers are generated in the channel and increase the channel carrier density. At the same time, the incompletely oxidized sites at the interface of bismuth selenide oxide and bismuth selenite oxide can act as gratings to capture holes, further increasing the conductivity of the channel and achieving effective enhancement of the response to infrared light.

[0058] like Fig.10 As shown, the device of the present invention is tested for synaptic plasticity dependent on light pulse time under infrared light and visible light, and 640 nm and 1320 nm are used as representative wavelengths of visible light and near-infrared light, respectively, for verification. (a) shows the change of device current over time after a light pulse of 1320 nm wavelength at different times, and (b) shows the change of device current over time after a light pulse of 640 nm wavelength at different times. As the light pulse time increases, the accumulation of photogenerated carriers increases, so the change in current is greater.

[0059] like Fig.11 As shown, the synaptic plasticity of the device of the present invention under infrared light and visible light, which depends on the intensity of light pulses and the number of light pulses, is tested. (a) shows the change of device current over time after different light powers and different numbers of 1320 nm wavelength light pulses, and (b) shows the change of device current over time after different light powers and different numbers of 640 nm wavelength light pulses. It is verified that the device of the present invention is modulated by a mixture of multiple input information dimensions, which is beneficial to the in-sense calculation of the neural network.

[0060] like Fig.12 As shown, the multi-level conductivity control behavior of the device of the present invention under infrared light and visible light is tested, where (a) is a continuous 2 5 The device current changes with time after a 1320 nm wavelength light pulse. (b) is the continuous 2 5The device current changes with time after a 640 nm wavelength light pulse. The highly linear conductance behavior exhibited by the device is crucial to achieve accurate neural network weight mapping and improve training / inference accuracy.

[0061] like Fig.13 As shown in the figure, 8 optical power densities were selected to test the conductivity retention characteristics of the device after receiving optical pulse information, proving its optical information storage capacity. 3 In the time dimension of s, it exhibits stable, non-interfering conductivity retention characteristics, which is crucial for in-situ information storage.

[0062] like Fig.14 As shown, the in-situ fusion photocurrent at the device level is demonstrated after light pulses with the same time and different infrared and visible light powers are applied to the device of the present invention. This verifies that the bipolar light response of the device of the present invention does not require gate voltage switching, and the response mechanisms to visible light and near-infrared light coexist in the designed device structure, and a dual-light fusion current that is not a simple sum of absolute values ​​can be obtained.

[0063] like Fig.15 As shown, the in-situ visible light-near infrared light information fusion capability of the device array of the present invention is further demonstrated. Strong light in a complex environment can cause part of the information of the luminous object to be submerged. The device current is tested after the three letters of infrared information "P", "K", and "U" containing strong visible light noise are recognized. The strong incident visible light intensity of 1 W / cm 2 Simulate light pollution under the condition of 1 mW / cm 2 Near-infrared light. After being processed by the device, the adverse effects of strong light are offset by the negative response of the heterogeneous transistor to visible light, and the positive light response amplifies the effective information contained in the near-infrared light. Based on this dual-band image fusion device and through the dynamic adjustment mechanism inside the device, as the number of iterations increases, the contrast of the image containing noise and characters is gradually enhanced, significantly improving the clarity of the characters in the noisy image.

[0064] Further research is conducted on the classification and recognition of pedestrian and vehicle patterns in complex road environments with strong light noise based on large-scale simulation device arrays. The specific implementation process is as follows Fig.16 After the in-situ preprocessing of the device of the present invention, the nighttime traffic picture with glare interference that integrates visible light and near-infrared light information is effectively clarified, which is helpful for identifying vehicles in complex environments.

[0065] like Fig.17As shown, the comparative analysis of the precision-recall curves before and after in-situ parallel fusion image preprocessing using the device of the present invention shows that the target recognition accuracy has been significantly improved, and the recall rate of vehicle detection has reached 98.3%, which is significantly higher than the recall rates of 89.4% and 73.7% of the visible light and infrared images alone, respectively, proving the effectiveness of visible-near-infrared image fusion perception based on in-situ self-oxidized grating neuromorphic devices.

[0066] The embodiments described above are not intended to limit the present invention. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention is defined by the scope of the claims.

Claims

1. An in-situ self-oxidized grating heterosynaptic transistor, characterized in that: The invention comprises a bottom gate substrate, a bottom gate dielectric layer and a heterogeneous synaptic structure located on the bottom gate dielectric layer are arranged on the bottom gate substrate, the heterogeneous synaptic structure comprises a bismuth oxygen selenide channel layer, a bismuth oxygen selenite barrier blocking layer and a perovskite light absorption layer, source and drain electrodes are arranged on both sides of the bismuth oxygen selenide channel layer, the energy level difference between the valence bands of the perovskite light absorption layer and the bismuth oxygen selenite barrier blocking layer is smaller than the energy level difference between their conduction bands, the bismuth oxygen selenite is obtained by in-situ oxidation of bismuth oxygen selenide, and some unoxidized sites exist as gratings.

2. The in-situ self-oxidized grating heterosynaptic transistor according to claim 1, characterized in that: The bottom gate substrate is a silicon substrate containing native defects.

3. The in-situ self-oxidized grating heterosynaptic transistor according to claim 1, characterized in that: The thickness of the bismuth oxygen selenide channel layer is in the range of 5-15 nm.

4. The in-situ self-oxidized grating heterosynaptic transistor according to claim 1, characterized in that: The thickness of the bismuth oxide selenite barrier layer is in the range of 3-6 nm.

5. The in-situ self-oxidized grating heterosynaptic transistor according to claim 1, characterized in that: The source and drain electrodes are Ti / Au electrodes, and their thickness does not exceed 90 nm.

6. The in-situ self-oxidized grating heterosynaptic transistor according to claim 1, characterized in that: The perovskite light-absorbing layer is organic perovskite, inorganic perovskite or organic-inorganic hybrid perovskite, and has a thickness of 100-200 nm.

7. The in-situ self-oxidized grating heterosynaptic transistor according to claim 1, characterized in that: The bottom gate dielectric layer is hafnium oxide with a thickness in the range of 10-20 nm.

8. A method for preparing an in-situ self-oxidized grating heterosynaptic transistor as claimed in claim 1, comprising the following steps: 1) Atomic layer deposition is used to grow a bottom gate dielectric layer on a silicon substrate; 2) Synthesis of two-dimensional bismuth oxide selenium single crystal nanosheets on mica substrate by chemical vapor deposition; 3) using polymethyl methacrylate (PMMA) to transfer the two-dimensional bismuth oxide selenium single crystal nanosheet onto the bottom gate dielectric layer; 4) Positioning the transferred two-dimensional bismuth oxygen selenide single crystal nanosheets and defining the bismuth oxygen selenide channel layer by electron beam exposure; 5) Ar ion etching for channel area separation; 6) Define the source and drain electrode regions by electron beam exposure; 7) Form source and drain electrodes by electron beam evaporation of Ti / Au metal stack and peeling off; 8) Oxidizing the surface of the bismuth oxygen selenide channel layer by an oxygen plasma treatment method to generate a bismuth oxygen selenite barrier layer; 9) Preparation of perovskite thin films by antisolvent spin coating.

9. The method for preparing the in-situ self-oxidized grating heterosynaptic transistor according to claim 8, characterized in that: The specific parameters of the treatment method in step 8) are: oxygen flow rate is 20-30 sccm, power is 25-30 watts, and treatment time is 7-9 minutes.

10. An on-chip sensing, storage and computing integrated structure, characterized in that: The structure is an array of periodically arranged in-situ self-oxidized grating heterosynaptic transistors as claimed in claim 1.

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