Parasitic resistance network generation method, computing device and computer readable storage medium

Abstract

This application discloses a parasitic resistance network generation method, computing device, and computer-readable storage medium, comprising: obtaining the current direction of a metal pattern in a target layout; generating nodes of a resistance network by dotting the target layout based on the current direction of the metal pattern and information about the surrounding environment of the metal pattern; the surrounding environment information is used to characterize the metal pattern information surrounding the metal pattern in the target layout; and generating the parasitic resistance network of the target layout based on the nodes. In this way, by dotting the layout based on the current direction of the metal pattern and information about the surrounding metal patterns, nodes of the resistance network are generated, and then the parasitic resistance network of the layout is generated based on the nodes, thereby improving the accuracy and convenience of extracting the parasitic resistance of the layout.

Description

Technical Field

[0001] The present invention relates to the field of chip technology, and in particular to a parasitic resistance network generation method, a computing device, and a computer-readable storage medium. Background Art

[0002] As Moore's Law continues to evolve, the density of transistors in chips is increasing, leading to continued shrinking of device sizes and increasingly complex metal patterns in the layout. The parasitic resistance and capacitance parameters of the layout are becoming increasingly important for chip performance and functionality. Therefore, accurately extracting the parasitic resistance and capacitance parameters of the layout and substituting them into post-simulation to evaluate their impact on chip performance is crucial. Currently, parasitic resistance is typically extracted by constructing a parasitic resistance network in the layout. However, existing parasitic resistance network generation methods may result in inaccurate extracted resistance values. Summary of the Invention

[0003] The purpose of this application is to provide a parasitic resistance network generation method, a computing device and a computer-readable storage medium to at least solve the problems in the related art.

[0004] To achieve the above objectives:

[0005] In a first aspect, an embodiment of the present application provides a method for generating a parasitic resistance network, the method comprising:

[0006] Obtain the current direction of the metal pattern in the target layout;

[0007] Dotting the target layout to generate nodes of a resistor network according to the current direction of the metal pattern and the surrounding environment information of the metal pattern; the surrounding environment information is used to characterize the metal pattern information around the metal pattern in the target layout;

[0008] A parasitic resistance network of the target layout is generated according to the nodes of the resistance network.

[0009] In one embodiment, obtaining the current direction of the metal pattern in the target layout includes:

[0010] Get the type of metal pattern in the target layout;

[0011] If the type of the metal pattern is a metal line pattern, determining the current direction according to contact pattern information of the metal line pattern;

[0012] If the type of the metal pattern is a through hole or a device pattern, the current direction is determined according to the electrical characteristics of the through hole or the device pattern.

[0013] In one embodiment, if the type of the metal pattern is a metal line pattern, determining the current direction according to contact pattern information of the metal line pattern includes:

[0014] If the contact pattern information indicates that there is no target contact pattern or there is only one target contact pattern that contacts one side of the metal line pattern and is located in the same metal layer, then determining the current direction of the metal pattern according to the direction of the metal line pattern;

[0015] Otherwise, the current direction of the metal pattern is determined according to the enclosing rectangle formed by the target contact pattern; wherein the target contact pattern is a pattern connected to the metal wire pattern in the contact pattern information.

[0016] In one embodiment, determining the current direction of the metal pattern according to the enclosing rectangle formed by the target contact pattern includes:

[0017] If the contact pattern information is at least two target contact patterns that are in contact with multiple sides of the metal wire pattern and are in the same metal layer, an enclosing rectangle is determined based on the target contact pattern, and the current direction of the metal pattern is determined based on the direction of the enclosing rectangle and the metal wire pattern.

[0018] In one embodiment, determining the current direction of the metal pattern according to the enclosing rectangle formed by the target contact pattern includes:

[0019] If the contact pattern information includes a through hole and / or an electrode on the metal line pattern as the target contact pattern, determining the current direction of the metal pattern according to an enclosing rectangle formed by the through hole and / or the electrode;

[0020] Alternatively, the current direction of the metal pattern is determined according to an enclosing rectangle defined by the through hole and / or the electrode and other target contact patterns of the metal line pattern.

[0021] In one embodiment, determining an enclosing rectangle according to the target contact pattern includes:

[0022] When the target contact pattern is a metal line pattern of the same metal layer, an enclosing rectangle passing through the midpoints of all contact areas on the metal pattern is determined, wherein the contact area is an area where the metal pattern and the target contact pattern overlap.

[0023] In one embodiment, determining the current direction of the metal pattern according to an enclosing rectangle determined by the through hole and / or the electrode and other target contact patterns of the metal line pattern includes:

[0024] Determine the midpoint of the contact area on the metal pattern that passes through all other target contact patterns and the enclosing rectangle of the through hole and / or the electrode, and determine the current direction of the metal pattern based on the direction of the enclosing rectangle; wherein the other target contact patterns are metal patterns in the target contact pattern other than the through hole and / or the electrode.

[0025] In one embodiment, determining the current direction of the metal pattern includes:

[0026] When the direction of the enclosing rectangle is the same as the direction of the metal pattern, determining the direction of the metal wire pattern as the current direction of the metal pattern;

[0027] When the direction of the enclosing rectangle is different from the direction of the metal pattern, the resistance components corresponding to the sides of the enclosing rectangle are calculated, and the direction of the side corresponding to the larger resistance component is determined as the current direction of the metal pattern.

[0028] In one embodiment, the step of generating nodes of a resistance network by dotting on the target layout according to the current direction of the metal pattern and the surrounding environment information of the metal pattern includes:

[0029] Determine the target dot metal pattern;

[0030] Determining whether the surrounding environment information of the target dotted metal pattern has a contact area;

[0031] If the contact area does not exist, determining the nodes of the resistor network on the target dotted metal pattern according to the current direction of the metal pattern;

[0032] If the contact area exists, a node of the resistor network associated with the contact area is determined according to the midpoint of the contact area.

[0033] In one embodiment, if the target dotted metal pattern is a metal line pattern, determining the nodes of the resistor network on the target dotted metal pattern includes:

[0034] The midpoint of a side of the target dotted metal pattern that is perpendicular to a current direction of the target dotted metal pattern is determined as a first node of the resistor network.

[0035] In one embodiment, if the target dotted metal pattern is a metal line pattern, determining a node of a resistor network associated with the contact area based on a midpoint of the contact area includes:

[0036] Determine the midpoint of the contact area according to the contact area type;

[0037] Determine a perpendicular line passing through the midpoint of the contact area and perpendicular to the current direction of the metal pattern to which the midpoint of the contact area belongs;

[0038] determining a perpendicular midline of the metal wire pattern according to a current direction of the metal wire pattern;

[0039] A second node of the resistor network is determined according to an intersection of the vertical line and the perpendicular midline.

[0040] In one embodiment, if the target dotted metal pattern is a metal line pattern and includes a through hole or an electrode, determining the nodes of the resistor network on the target dotted metal pattern includes:

[0041] A dot is placed on a through hole or an electrode on the target dotted metal line pattern to determine it as the third node of the resistor network.

[0042] In one embodiment, if the target dotted metal pattern is a through hole, determining a node of a resistor network associated with the contact area based on a midpoint of the contact area includes:

[0043] Dots are made at both ends of the through hole as the fourth node of the resistor network.

[0044] In one embodiment, the step of forming dots at both ends of the through hole as the fourth node of the resistor network includes:

[0045] Determining a fourth node of the resistor network according to a midpoint of a contact area between any end of the through hole and a metal line pattern of the metal layer in which the through hole is located;

[0046] And / or, the fourth node of the resistor network is determined according to the midpoint between the two ends of the through hole.

[0047] In one embodiment, the target dotted metal pattern includes a metal line pattern and / or a through hole, and generating the parasitic resistance network of the target layout according to the nodes of the resistance network includes:

[0048] sequentially connecting the nodes on the metal wire pattern along the current direction of the metal wire pattern to generate lines on the metal wire pattern;

[0049] and / or, determining a connection line generated by a node on a metal layer where either end of the through hole is located;

[0050] and / or, determining a connection line generated by a node in the current direction of the through hole;

[0051] A parasitic resistance network of the target layout is generated according to the connection.

[0052] In one embodiment, before generating the parasitic resistance network of the target layout according to the nodes of the resistance network, the method includes: merging any two nodes if the distance between the two nodes is less than a threshold.

[0053] In one embodiment, if the distance between any two nodes is less than a threshold, merging the two nodes includes:

[0054] When the distance between the midpoint of the contact area and the second node is smaller than a threshold, the midpoint of the contact area is merged with the second node.

[0055] When the distance between the midpoint of the contact area and the fourth node is smaller than a threshold, the midpoint of the contact area and the fourth node are merged.

[0056] In a second aspect, an embodiment of the present application provides a computing device, comprising: a processor and a memory storing a computer program, wherein when the processor runs the computer program, the parasitic resistance network generation method described in the first aspect is implemented.

[0057] In a third aspect, an embodiment of the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the parasitic resistance network generation method described in the first aspect is implemented.

[0058] The parasitic resistance network generation method, computing device and computer-readable storage medium provided in the embodiments of the present application generate nodes of the resistance network by dotting on the layout through the current direction of the metal pattern and the surrounding metal pattern information, and then generate the parasitic resistance network of the layout based on the nodes, thereby improving the accuracy and convenience of extracting the parasitic resistance of the layout. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] Figure 1 A schematic flow chart of a parasitic resistance network generation method provided in an embodiment of the present application.

[0060] Figure 2 Schematic diagram of the metal pattern in the embodiment of this application Figure 1 .

[0061] Figure 3 Schematic diagram of the metal pattern in the embodiment of this application Figure 2 .

[0062] Figure 4 Schematic diagram of the metal pattern in the embodiment of this application Figure 3 .

[0063] Figure 5 Schematic diagram of the metal pattern in the embodiment of this application Figure 4 .

[0064] Figure 6 Schematic diagram of the metal pattern in the embodiment of this application Figure 5 .

[0065] Figure 7 Schematic diagram of the metal pattern in the embodiment of this application Figure 6 .

[0066] Figure 8 Schematic diagram of the metal pattern in the embodiment of this application Figure 7 .

[0067] Figure 9 Schematic diagram of the metal pattern in the embodiment of this application Figure 8 .

[0068] Figure 10 Schematic diagram of the metal pattern in the embodiment of this application Figure 9 .

[0069] Figure 11 Schematic diagram of the metal pattern in the embodiment of this application Figure 10 .

[0070] Figure 12 Schematic diagram of the metal pattern in the embodiment of this application Figure 10 one.

[0071] Figure 13 Schematic diagram of the metal pattern in the embodiment of this application Figure 10 two.

[0072] Figure 14 A schematic diagram of the structure of a computing device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0073] Exemplary embodiments are described in detail herein, with examples illustrated in the accompanying drawings. When the following description refers to the drawings, identical numerals in different drawings represent identical or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with this application.

[0074] It should be noted that, in this document, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprising a ..." does not exclude the presence of other identical elements in the process, method, article or device comprising the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their explanation in the specific embodiment or further combined with the context of the specific embodiment.

[0075] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are merely used to distinguish information of the same type from one another. For example, without departing from the scope of this document, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the term "if" as used herein may be interpreted as "at the time of," "when," or "in response to a determination." Furthermore, as used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context indicates otherwise. It should be further understood that the terms "comprising" and "including" indicate the presence of the described features, steps, operations, elements, components, items, types, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, components, items, types, and / or groups. The terms "or" and "and / or" as used herein are to be interpreted as inclusive, meaning any one or any combination. Thus, “A, B, or C” or “A, B, and / or C” means “any of: A; B; C; A and B; A and C; B and C; A, B, and C.” An exception to this definition occurs only when a combination of elements, functions, steps, or operations are inherently mutually exclusive in some manner.

[0076] It should be understood that, although the various steps in the flowchart in the embodiment of the present application are shown in sequence according to the indication of the arrows, these steps are not necessarily performed in sequence in the order indicated by the arrows. Unless clearly stated herein, the execution of these steps is not strictly limited in order, and they can be performed in other orders. Moreover, at least a portion of the steps in the figure may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily performed at the same time, but can be performed at different times, and their execution order is not necessarily performed in sequence, but can be performed in turn or alternately with at least a portion of other steps or sub-steps or stages of other steps.

[0077] It should be noted that in this article, step codes such as S101 and S102 are used for the purpose of expressing the corresponding content more clearly and concisely, and do not constitute a substantial limitation on the order. When implementing the step, those skilled in the art may execute S102 first and then S101, etc., but these should all be within the scope of protection of this application.

[0078] It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application.

[0079] In the subsequent description, the use of suffixes such as "module", "component" or "unit" to represent elements is only for the purpose of facilitating the description of the present application and has no specific meaning. Therefore, "module", "component" or "unit" can be used interchangeably.

[0080] See Figure 1 , is a parasitic resistance network generation method provided in an embodiment of the present application. The parasitic resistance network generation method can be performed by a parasitic resistance network generation device provided in an embodiment of the present application. The parasitic resistance network generation device can be implemented in software and / or hardware, for example, it can be specifically a computing device such as a computer or server. The parasitic resistance network generation method provided in this embodiment includes:

[0081] Step S101: Obtain the current direction of the metal pattern in the target layout.

[0082] Among them, the target layout is the layout of the chip for which the parasitic resistance network is to be generated. The layout includes multiple metal patterns, and the metal patterns can be divided into metal line patterns, through-hole patterns, device patterns, etc. according to their types. For each metal pattern in the target layout, the current direction of the metal pattern can be obtained. The metal line pattern is generally rectangular, and the current direction of the metal line pattern may be the length direction of the rectangle or the width direction of the rectangle. Here, a first direction is determined according to the length direction or the width direction of the rectangle. The current direction of the metal pattern may be the first direction or the second direction, and the first direction is perpendicular to the second direction.

[0083] In one embodiment, obtaining the current direction of the metal pattern in the target layout includes:

[0084] Get the type of metal pattern in the target layout;

[0085] If the type of the metal pattern is a metal line pattern, the current direction is determined according to contact pattern information of the metal line pattern;

[0086] If the metal pattern is a through hole or a device pattern, the current direction is determined according to the electrical characteristics of the through hole or the device pattern.

[0087] Among them, the type of metal graphic can be determined by the information of the metal graphic defined in the layout. The information of the metal graphic defined in the layout includes the type of metal graphic, the size of the metal graphic, the metal layer where the metal graphic is located, etc., which will not be repeated here. The method of determining the current direction of the metal graphic is different for different types of metal graphics. When the type of metal graphic is a metal wire graphic, the contact graphic information of the metal wire graphic is first obtained, and then the current direction of the metal graphic is determined based on the contact graphic information of the graphic in contact with the metal wire graphic. When the type of metal graphic is a through-hole or device graphic, the electrical characteristics of the through-hole or device graphic are first obtained, and then the current direction of the metal graphic is determined based on the electrical characteristics of the through-hole or device graphic. Here, the electrical characteristics may include properties such as the connection endpoints of the through-hole and the relative positions of the device component terminals.

[0088] It should be noted that the current direction of the through hole is always the connection direction between the metal layers, such as Figure 2 The vertical direction in the image is the z-axis in a rectangular coordinate system. Devices may include metal oxide semiconductor field effect transistors and resistors, etc. The device pattern may be a pattern of a corresponding component terminal of the device, such as a positive electrode pattern and a negative electrode pattern of a resistor, and the current direction of the device pattern is the direction of current flow when the device is operating.

[0089] For metal oxide semiconductor field effect transistors, the components of the device include source region, drain region, gate, field polysilicon, etc. The current direction of the source or drain region pattern is related to their relative position with the gate pattern, such as Figure 3 As shown in (a), when the source or drain region is adjacent to the gate on the left and right, the current direction of the source or drain region pattern is the x-axis direction; when the source or drain region is adjacent to the gate on the top and bottom, the current direction of the source or drain region pattern is the y-axis direction. The current direction of the field polysilicon or gate pattern is related to their relative position. Figure 3As shown in (a), when the field polysilicon contacts the gate from top to bottom, the current direction of the field polysilicon and the gate pattern is the y-axis direction; when the field polysilicon contacts the gate from left to right, the current direction of the field polysilicon and the gate pattern is the x-axis direction.

[0090] For a resistor device, the components include a positive electrode, a negative electrode, a resistor body, etc. The current direction of the positive or negative electrode and the resistor body pattern is related to their relative positions, such as Figure 3 As shown in (b), when the positive or negative electrode is adjacent to the resistor body in the vertical direction, the current direction of the positive or negative electrode and the resistor body is in the y-axis direction; when the positive or negative electrode is adjacent to the resistor body in the horizontal direction, the current direction of the positive or negative electrode and the resistor body is in the x-axis direction.

[0091] In this way, when the type of metal pattern is a metal line pattern, the current direction is determined according to the contact pattern information of the metal line pattern, and when the type of metal pattern is a through-hole or device pattern, the current direction is determined according to the electrical characteristics of the through-hole or device pattern. That is, the current direction of the metal pattern is determined according to the different types of metal patterns in combination with the corresponding information, which can make the determined current flow direction more practical and more accurate, and further improve the accuracy of extracting the parasitic resistance of the layout based on this current direction.

[0092] In one embodiment, if the type of the metal pattern is a metal line pattern, determining the current direction according to contact pattern information of the metal line pattern includes:

[0093] If the contact pattern information indicates that there is no target contact pattern or there is only one target contact pattern that contacts one side of the metal line pattern and is located in the same metal layer, the current direction of the metal pattern is determined according to the direction of the metal line pattern;

[0094] Otherwise, the current direction of the metal pattern is determined according to the enclosing rectangle formed by the target contact pattern;

[0095] Among them, the target contact pattern is a pattern connected to the metal wire pattern in the contact pattern information. The contact pattern information may include the type of the target contact pattern, the contact situation between the target contact pattern and the metal wire pattern, etc. Among them, if the length of the metal wire pattern in the first direction is greater than the length in the second direction, the first direction is considered to be the long side direction of the metal wire pattern, and the long side direction of the metal wire pattern is the direction of the metal wire pattern. In some embodiments, the short side direction of the metal pattern can be the direction of the metal wire pattern. It should be noted that the enclosing rectangle is used to represent the area on the metal wire pattern that includes all the target contact patterns and the contact positions of the metal wire pattern, generally referring to the smallest enclosed area.

[0096] Specifically, if the metal pattern is a metal wire pattern, the contact pattern information of the metal wire pattern is detected. If the contact pattern information indicates that there is no target contact pattern, that is, there is no metal pattern in contact with the metal wire pattern, or there is a metal pattern in contact with one side of the metal wire pattern, and there is only one target contact pattern in the same metal layer, that is, at the same height in the chip and only one metal pattern in contact with one edge of the metal wire pattern, then the current direction of the metal pattern is determined based on the direction of the metal wire pattern, for example, the long side direction of the metal wire pattern is determined as the current direction of the metal pattern. Otherwise, the current direction of the metal pattern is determined based on the enclosing rectangle formed by the target contact pattern. The enclosing rectangle formed by the target contact pattern is located on the metal wire pattern, and its area can be smaller than or equal to the area of the metal wire pattern.

[0097] In one embodiment, determining the current direction of the metal pattern according to the enclosing rectangle formed by the target contact pattern includes:

[0098] If the contact pattern information is at least two target contact patterns that are in contact with multiple sides of the metal line pattern and are in the same metal layer, an enclosing rectangle is determined based on the target contact pattern, and the current direction of the metal pattern is determined based on the direction of the enclosing rectangle and the metal line pattern.

[0099] Specifically, if the contact pattern information indicates at least two target contact patterns that contact multiple sides of a metal wire pattern and are located in the same metal layer, that is, at least two metal patterns at the same height in the chip contact any one or more sides of the metal wire pattern, an enclosing rectangle is first determined based on the target contact pattern. Then, the current direction of the metal pattern is determined based on the orientation of the enclosing rectangle and the metal wire pattern. The orientation of the enclosing rectangle and the metal wire pattern can be the direction of their long sides.

[0100] In one embodiment, determining the current direction of the metal pattern according to the enclosing rectangle formed by the target contact pattern includes:

[0101] If the contact pattern information includes vias and / or electrodes on a metal line pattern as target contact patterns, then

[0102] Determine the current direction of the metal pattern according to the enclosing rectangle formed by the through hole and / or electrode;

[0103] Alternatively, the current direction of the metal pattern is determined based on an enclosing rectangle defined by the through hole and / or electrode and other target contact patterns of the metal line pattern.

[0104] Specifically, if the contact pattern information includes a through-hole and / or electrode on a metal wire pattern as a target contact pattern, indicating that the metal wire pattern is connected to a through-hole and / or electrode, the current direction of the metal pattern can be determined based on the connecting line between the through-hole and / or electrode, or the enclosing rectangle formed by the through-hole and / or electrode. For example, if the contact pattern information includes at least one through-hole and at least one electrode on the metal wire pattern, if the connecting line between the through-hole and the electrode is a straight line, the direction of the straight line can be determined as the current direction of the metal pattern; if the connecting line between the through-hole and the electrode is not a straight line, the long side direction of the enclosing rectangle formed by the through-hole and the electrode can be determined as the current direction of the metal pattern. If the contact pattern information includes both at least one target contact pattern that contacts one side or different sides of the metal wire pattern and is located in the same metal layer, and also includes through-holes and / or electrodes on the metal wire pattern, the current direction of the metal pattern can be determined based on the enclosing rectangle formed by the through-hole and / or electrode and other target contact patterns of the metal wire pattern.

[0105] The other target contact patterns of the metal line pattern are patterns other than the through holes and / or electrodes on the metal line pattern among all target contact patterns of the metal line pattern. Figure 4 For a single isolated metal line pattern, the long side direction of the metal line pattern is determined as its current direction. Figure 4 The current direction in (a) is the y-axis direction. Figure 4 The current direction in (b) is the x-axis direction. Figure 5 For metal wire patterns with the same height and only one side connected to a metal pattern, the current direction is also determined by the long side direction of the metal wire pattern. Figure 5 The current direction of the leftmost metal wire pattern in (a) is the x-axis direction. Figure 5 The current direction of the leftmost metal line pattern in (b) is the y-axis direction. Figure 6 For contact pattern information of vias and / or electrodes connected to metal line patterns, the current direction of the metal pattern is determined based on the connection between the vias and / or electrodes or the enclosing rectangle formed by the vias and / or electrodes. Figure 6 The current direction in (c) is the direction of the line between the through hole and the electrode, that is, the y-axis direction. Figure 6 The current direction in (d) is the long side direction of the enclosing rectangle formed by the through hole and the electrode, that is, the x-axis direction.

[0106] In this way, according to the different contact pattern information of the metal line pattern, the current direction of the metal pattern is determined in a corresponding manner, which can accurately and conveniently determine the current flow direction, further improving the accuracy and convenience of extracting the parasitic resistance of the layout based on this current direction.

[0107] In one embodiment, determining an enclosing rectangle according to the target contact pattern includes:

[0108] When the target contact pattern is a metal line pattern of the same metal layer, an enclosing rectangle passing through the midpoints of all contact areas on the metal pattern is determined, wherein the contact area is the area where the metal pattern and the target contact pattern overlap.

[0109] Specifically, when the target contact pattern and the metal pattern are metal line patterns of the same metal layer, first determine the line segments or surfaces that overlap with each target contact pattern, namely the contact line segments or contact surfaces, then determine the midpoints of all contact line segments or contact surfaces, and finally determine the enclosing rectangle on the metal pattern that passes through the midpoints of all contact line segments or contact surfaces. Among them, the contact area can be a contact line segment or a contact surface. The overlapping area refers to the intersection of coordinate positions, which may be a contact surface or a contact line segment. The midpoint of the contact area corresponds to the center point of the contact surface or the midpoint of the contact line segment.

[0110] It should be noted that the contact line segment or surface corresponding to any target contact pattern and the metal pattern may be an edge or the entire surface of the metal pattern, or may be a portion of an edge or the entire surface. Figure 7 ,After determining the midpoints of all contact line segments between the metal pattern and the target contact pattern, the enclosing rectangle passing through the midpoints of all contact line segments on the metal pattern can be obtained, as Figure 7 As shown in the dotted box in . In this way, the enclosing rectangle can be determined accurately and quickly, further improving the accuracy and convenience of extracting the parasitic resistance of the layout.

[0111] In one embodiment, determining the current direction of the metal pattern based on an enclosing rectangle determined by a through hole and / or an electrode and other target contact patterns of the metal line pattern includes:

[0112] Determine the enclosing rectangle of the metal pattern that passes through the midpoint of the contact area of all other target contact patterns and the through-holes and / or electrodes, and determine the direction of current flow through the metal pattern based on the direction of the enclosing rectangle. Other target contact patterns are metal patterns in the target contact pattern other than the through-holes and / or electrodes.

[0113] Specifically, when the target contact pattern includes a metal line pattern in the same metal layer as the metal pattern, and a through-hole and / or electrode on the metal pattern, first determine the line segments that coincide with all other target contact patterns, namely the contact line segments and the through-holes or electrodes, then determine the midpoints of the contact line segments on the metal pattern that pass through all other target contact patterns and the enclosing rectangles of the through-holes and / or electrodes, and determine the current direction of the metal pattern based on the direction of the enclosing rectangle.

[0114] It should be noted that the enclosing rectangle includes all through-holes and / or electrodes. When the target contact pattern includes through-holes and / or electrodes, the enclosing rectangle passing through the midpoints of all contact areas and the through-holes and / or electrodes on the metal pattern is determined. For example, refer to Figure 8 ,like Figure 8 As shown in (a), (b), (c), and (d), when the target contact pattern includes one or more vias, the enclosing rectangle of the metal pattern, passing through the midpoints of all contact segments and the vias, is determined. This allows for accurate and rapid determination of the enclosing rectangle, further improving the accuracy and convenience of extracting the layout's parasitic resistance.

[0115] In one embodiment, determining the current direction of the metal pattern includes:

[0116] When the direction of the enclosing rectangle is the same as the direction of the metal pattern, the direction of the metal wire pattern is determined as the current direction of the metal pattern;

[0117] When the direction of the enclosing rectangle is different from the direction of the metal pattern, the resistance components corresponding to the sides of the enclosing rectangle are calculated, and the direction of the side corresponding to the larger resistance component is determined as the current direction of the metal pattern.

[0118] In general, the long side direction of the enclosing rectangle is the direction of the enclosing rectangle, and the long side direction of the metal pattern is the direction of the metal pattern. In other embodiments, the short side direction of the enclosing rectangle can also be the direction of the enclosing rectangle, and the short side direction of the metal pattern can be the direction of the metal pattern. Specifically, taking the long side direction of the enclosing rectangle as the direction of the enclosing rectangle and the long side direction of the metal pattern as the direction of the metal pattern as an example, when the long side direction of the enclosing rectangle is the same as the long side direction of the metal pattern, that is, when the long side direction of the enclosing rectangle is consistent with the long side direction of the metal pattern, it means that the long side direction of the metal wire pattern can indicate the current direction of the metal pattern, and the long side direction of the metal wire pattern is determined as the current direction of the metal pattern, such as Figure 4 、 Figure 5 and Figure 7 As shown in ; when the long side direction of the enclosing rectangle is different from the long side direction of the metal pattern, the resistance components corresponding to the long side and short side of the enclosing rectangle are first calculated based on the resistivity of the metal wire pattern and the length of each side, and the side direction corresponding to the larger resistance component among the resistance components corresponding to each side is determined as the current direction of the metal pattern.

[0119] For example, Figure 9As shown, L and W are the long and short lengths of the metal line pattern, respectively. L1 and W1 are the long and short lengths of the rectangle formed by the midpoint of the contact line segment, respectively. If the current flow through the center metal line pattern is along the y-axis, the total resistance of the entire center metal line pattern is: ρ.L / (W*H), where the resistance component in the y-direction is: ρ.L / (W*H)*(W1 / L)=ρ.W1 / (W*H). If the current flow through the center metal line pattern is along the x-axis, the total resistance of the entire center metal line pattern is: ρ.W / (L*H), where the resistance component in the x-axis is: ρ.W / (L*H)*(L1 / W)=ρ.L1 / (L*H).

[0120] In this embodiment, the direction with the greater resistance component is used as the current direction of the middle metal wire pattern. Since the resistivity ρ is a constant for the same metal material and the thickness H of the same metal wire is the same, when comparing the resistance components in the x-axis and y-axis directions, it is only necessary to compare L1 / L and W1 / W. Therefore, if W1 / W>L1 / L, indicating that the resistance component in the y-axis direction is greater, the long side direction of the middle metal wire pattern is used as the current direction of the metal wire pattern; if W1 / W<=L1 / L, indicating that the resistance component in the x-axis direction is greater, the long side direction of the enclosing rectangle formed by the midpoint of the contact line segment is used as the current direction of the metal wire pattern. In this way, the current direction of the metal pattern is determined according to the relationship between the long side direction of the enclosing rectangle and the long side direction of the metal pattern, which can achieve accurate and practical determination of the current flow direction, further improving the accuracy and convenience of extracting the parasitic resistance of the layout based on this current direction.

[0121] Step S102: dotting the target layout to generate nodes of the resistor network according to the current direction of the metal pattern and the surrounding environment information of the metal pattern; the surrounding environment information is used to represent the metal pattern information around the metal pattern in the target layout.

[0122] Specifically, after determining the current direction of the metal pattern in the target layout, the surrounding environment information of the metal pattern is obtained. The surrounding environment information is used to characterize the metal pattern information surrounding the metal pattern in the target layout. The metal pattern information surrounding the metal pattern includes at least one of the following: there is no contacting target metal pattern; there is a contacting target metal pattern with the same current direction and the corresponding contact line segment is perpendicular to the current direction of the metal pattern; there is a target metal pattern with the same current direction and the corresponding contact line segment is parallel to the current direction of the metal pattern; there is a target metal pattern with different current directions. Among them, the target metal pattern is a metal line pattern that contacts any side of the metal pattern. It should be noted that when the type of the target contact pattern of the metal pattern is a metal line pattern, the target contact pattern of the metal pattern is the target metal pattern of the metal pattern. Then, according to the current direction of the metal pattern and the surrounding environment information of the metal pattern, the nodes of the resistance network are generated on the target layout to facilitate the subsequent generation of the parasitic resistance network of the target layout based on the nodes. It should be noted that, in the process of generating nodes of the resistance network by dotting on the target layout according to the current direction of the metal pattern and the surrounding environment information of the metal pattern, if there is a contact pattern on the metal pattern, dots are made on the metal pattern and / or the contact pattern of the metal pattern along the current direction.

[0123] In one embodiment, generating nodes of a resistor network by dotting a target layout according to the current direction of the metal pattern and the surrounding environment information of the metal pattern includes:

[0124] Determine the target dot metal pattern;

[0125] Determine whether the surrounding environment information of the target dotted metal pattern has a contact area;

[0126] If there is no contact area, the nodes of the resistance network on the target dotted metal pattern are determined according to the current direction of the metal pattern;

[0127] If a contact area exists, a node of a resistor network associated with the contact area is determined according to a midpoint of the contact area.

[0128] Among them, the target dotted metal figure is the metal figure to be dotted, and dotting refers to determining the nodes of the resistance network on the metal figure. The surrounding environment information of the target dotted metal figure can be used to indicate whether the target dotted metal figure has other metal figures in contact with it. Other metal figures may include metal wire figures, through holes, electrodes, etc. The contact area may be a contact line segment or a contact surface, that is, the contact area is an area where two figures overlap, for example, the overlapping line segments are contact line segments or the overlapping areas are contact areas. If the target dotted metal figure is not in contact with other metal figures, then the surrounding environment information of the metal figure is determined to include the absence of a contact area, and the nodes of the resistance network on the target dotted metal figure can be determined based on the current direction of the metal figure. If the target dotted metal figure is in contact with other metal figures, then the surrounding environment information of the metal figure is determined to include the presence of a contact area, and the nodes of the resistance network associated with the contact area are determined based on the midpoint of the contact area. In one embodiment, the surrounding environment information of each side of the metal pattern perpendicular to the current direction is determined respectively, that is, the target side of the target dotted metal pattern is determined, and it is judged whether the surrounding environment information of the target side indicates that there is a contact area. If there is no contact area, the node of the resistance network on the target side is determined according to the current direction of the metal pattern.

[0129] In one embodiment, if the target dotted metal pattern is a metal line pattern, determining the nodes of the resistor network on the target dotted metal pattern includes:

[0130] The midpoint of a side of the target dotted metal pattern that is perpendicular to the current direction of the target dotted metal pattern is determined as the first node of the resistor network.

[0131] Wherein, when the target dotted metal pattern does not contact other metal patterns and the target dotted metal pattern is a metal line pattern, the midpoint of the side of the target dotted metal pattern that is perpendicular to the current direction of the target dotted metal pattern can be determined as the first node of the resistor network. In one embodiment, the target dotted metal pattern does not contact other metal patterns includes that the target side of the target metal pattern does not contact other metal patterns, while other sides can contact other metal patterns. For example, Figure 10 As shown in (a), there is no other metal pattern around the metal pattern, that is, there is no contact area, that is, there is no contact area on the two sides perpendicular to the current direction. The current direction is the long side direction of the metal pattern, so the midpoint of the short side of the metal pattern can be determined as the first node of the resistor network. Figure 10 As shown in (b), if there is no contact area on the left side of the metal graphic, the midpoint of the left side can be determined as the first node of the resistor network. If there is a contact area on the right side, the node of the resistor network associated with the contact area can be determined based on the midpoint of the contact area.

[0132] In one embodiment, if the target dotted metal pattern is a metal line pattern, determining a node of a resistor network associated with the contact area according to a midpoint of the contact area includes:

[0133] Determine the midpoint of the contact area according to the contact area type;

[0134] Determine a perpendicular line passing through the midpoint of the contact area and perpendicular to the current direction of the metal pattern to which the midpoint of the contact area belongs;

[0135] Determine the perpendicular midline of the metal wire pattern according to the current direction of the metal wire pattern;

[0136] The second node of the resistor network is determined according to the intersection of the vertical line and the perpendicular median line.

[0137] Among them, the contact area types include contact line segments and contact surfaces. When the contact area is a contact line segment, the midpoint of the contact area is the midpoint of the contact line segment, and when the contact area is a contact surface, the midpoint of the contact area is the midpoint of the contact surface. After determining the midpoint of the contact area, a perpendicular line passing through the midpoint of the contact area and perpendicular to the current direction of the metal figure to which the midpoint of the contact area belongs can be determined, wherein the midpoint of the contact area belongs to the two metal figures forming the contact area, that is, a perpendicular line perpendicular to the current direction is drawn to the two metal figures through the midpoint. Among them, the perpendicular midpoint of the metal wire figure is determined according to the current direction of the metal wire figure, and the perpendicular midpoint parallel to the current direction of the metal wire figure can be determined as the perpendicular midpoint of the metal wire figure. The second node of the resistor network is determined according to the intersection of the perpendicular line and the perpendicular midpoint, and the intersection of the perpendicular line and the perpendicular midpoint can be determined as the second node of the resistor network. As Figure 10 As shown in the left figure of (b), when the current direction of the metal graphics is the same and the contact area is the contact surface, the vertical lines perpendicular to the current direction of the metal graphics are parallel and coincident, and the intersection of the vertical line and the perpendicular median line and the center point of the contact surface are determined as the nodes of the resistance network, and the intersection of the vertical line and the perpendicular median line and the center point of the contact surface are located on the same straight line. Figure 10 As shown in the left figure of (c), when the current direction of the metal pattern is different and the contact area is the contact surface, the vertical lines perpendicular to the current direction of the metal pattern are vertical, and the intersection of the vertical line and the perpendicular median line and the center point of the contact surface are determined as the nodes of the resistance network. Moreover, the intersection of the vertical line and the perpendicular median line and the center point of the contact surface are not located on the same straight line. Figure 10 As shown in the right figure of (b), when the current direction of the metal graphics is the same and the contact area is a contact line segment, the vertical lines perpendicular to the current direction of the metal graphics are parallel and coincident, and the intersection of the vertical line and the median vertical line and the midpoint of the contact line segment are determined as nodes of the resistance network, and the intersection of the vertical line and the median vertical line and the midpoint of the contact line segment are located on the same straight line. Figure 10As shown in the right figure of (c), when the current direction of the metal pattern is different and the contact area is a contact line segment, the perpendicular lines perpendicular to the current direction of the metal pattern are perpendicular, and the intersection of the perpendicular line and the perpendicular median line and the midpoint of the contact line segment are determined as nodes of the resistance network, and the intersection of the perpendicular line and the perpendicular median line and the midpoint of the contact line segment are located on the same straight line.

[0138] In one embodiment, if the target dotted metal pattern is a metal line pattern and includes a through hole or an electrode, determining the nodes of the resistor network on the target dotted metal pattern includes:

[0139] A dot is placed on a through hole or electrode on the target dotted metal line pattern to determine it as the third node of the resistor network.

[0140] Wherein, when the target dotted metal pattern is a metal line pattern and the target dotted metal pattern includes a through hole or an electrode, a dot can be made on the through hole or electrode on the target dotted metal line pattern to determine it as the third node of the resistor network. Figure 11 As shown, when the metal line pattern includes vias and / or electrodes, points can be placed on the vias and / or electrodes to define them as nodes of the resistor network.

[0141] Step S103: generating a parasitic resistance network of the target layout according to the resistance network nodes.

[0142] Specifically, after determining the nodes of the resistance network, a parasitic resistance network of the target layout is generated according to the nodes of the resistance network, so that the parasitic resistance of the target layout can be calculated based on the parasitic resistance network of the target layout.

[0143] Among them, after determining the nodes of the resistance network, the adjacent nodes can be connected in sequence along the current direction to form the edges connecting the nodes in the resistance network, and then the resistance values corresponding to each edge are calculated according to the resistivity and other information of the metal material corresponding to the metal graphic, and then the resistance values corresponding to each edge are assigned to the corresponding edges to generate the parasitic resistance network of the target layout. Here, the calculation method of the resistance values corresponding to each edge can refer to the prior art and will not be repeated here. It should be noted that after determining the nodes based on the current direction of the metal graphic, connecting the nodes can be more consistent with the actual flow direction of the current and simplifying the resistance network, so that when calculating the resistance migration, the path length calculation error is smaller. In this way, the parasitic resistance network of the target layout can be generated quickly and accurately, further improving the accuracy and convenience of extracting the parasitic resistance of the layout.

[0144] In one embodiment, generating a parasitic resistance network of a target layout according to nodes of a resistance network includes:

[0145] The nodes of the resistance network on the metal line pattern are connected in sequence along the current direction of the metal line pattern to generate a parasitic resistance network of the target layout.

[0146] After determining the nodes on the metal line pattern, the nodes on the metal line pattern can be connected in sequence along the current direction of the metal line pattern to generate a parasitic resistance network of the target layout. Figure 11 As shown, the parasitic resistance network of the target layout is generated by connecting the nodes on the metal line patterns that are in contact with each other in sequence according to their respective current directions.

[0147] In one embodiment, if the target dotted metal pattern is a through-hole, determining the node of the resistor network associated with the contact area based on the midpoint of the contact area includes: dotting at both ends of the through-hole as the fourth node of the resistor network. Specifically, when the target dotted metal pattern is a through-hole, dotting at both ends of the through-hole includes not only dotting at the midpoints of both ends of the through-hole, but also dotting at the contact area between the through-hole and the metal wire pattern, with the dots at both ends of the through-hole serving as the fourth node of the resistor network. The two ends of the through-hole are respectively connected to metal wire patterns at metal layers at different heights. The contact area between the through-hole and the metal wire pattern is generally the contact surface, that is, the dot is placed at the center of the contact surface between the through-hole and the metal wire pattern.

[0148] In one embodiment, dots are formed at both ends of the through hole as the fourth node of the resistor network, including:

[0149] The fourth node of the resistor network is determined based on the midpoint of the contact area between either end of the through hole and the metal line pattern of the metal layer; and / or, the fourth node of the resistor network is determined based on the midpoint of both ends of the through hole.

[0150] Generally, dotting the ends of the through-hole includes dotting the midpoints of the two ends of the through-hole. In some embodiments, dotting is performed when the midpoint of either end of the through-hole is on the metal wire pattern to determine the fourth node of the resistor network; that is, when the target metal pattern is a metal wire pattern, the target dotted metal pattern includes a through-hole or an electrode, and the through-hole on the target dotted metal pattern is dotted to determine the third node of the resistor network. In this case, the third node and the fourth node of the resistor network are the same node. In other embodiments, the midpoints of the two ends of the through-hole may not be on the metal wire pattern, in which case dotting the midpoints of the two ends of the through-hole generates the fourth node.

[0151] Among them, dotting at both ends of the through hole also includes dotting at the contact area between the through hole and the metal wire pattern. In some embodiments, when there is contact between either end of the through hole and the metal wire pattern of the metal layer, the midpoint of the contact area between either end of the through hole and the metal wire pattern of the metal layer can be dotted and determined as the fourth node of the resistor network. At this time, it can also be considered that when the target metal pattern is a metal wire pattern, the target dotted metal pattern includes a through hole or an electrode, and the through hole on the target dotted metal pattern is dotted and determined as the third node of the resistor network. At this time, the third node and the fourth node of the resistor network are the same node. Figure 12 (a) Middle through hole A end, B end, Figure 12 (b) Middle through hole B end, Figure 12 Middle (c) middle through hole B end, Figure 12 Middle (d) middle through hole B end, Figure 12 As shown in the through hole B end in (e), when the contact area between one end of the through hole and the metal wire pattern covers the center of the through hole, a dot is made at the center of one end of the through hole to form a fourth node. The midpoint of the corresponding contact area, that is, the midpoint of the through hole at this end, can be determined as a node of the resistor network, and Figure 12 (b) middle through hole A end, Figure 12 Middle (c) middle through hole A end, Figure 12 Middle (d) middle through hole A end, Figure 12 Middle (e) middle through hole A end, Figure 12 As shown in (f) at ends A and B of the through hole, the contact area between one end of the through hole and the metal wire pattern cannot cover the center of the through hole. In this case, a dot is made at the center of the contact area, and a dot is also made at the center of this end of the through hole. The midpoint of the corresponding contact area and the midpoint of the through hole at this end can be determined as the nodes of the resistor network.

[0152] In one embodiment, the target dotted metal pattern includes a metal line pattern and / or a via, and generating a parasitic resistance network of the target layout according to the nodes of the resistance network includes:

[0153] Connecting nodes on the metal wire pattern in sequence along the current direction of the metal wire pattern to generate lines on the metal wire pattern;

[0154] and / or, determining the connections generated by nodes on the metal layer where either end of the through hole is located;

[0155] and / or, determining the connection lines generated by the nodes in the current direction of the through hole;

[0156] Generate the parasitic resistance network of the target layout based on the connections.

[0157] After marking the two ends of the through hole as the fourth node of the resistor network, the fourth node on the metal layer where either end of the through hole is located can be connected based on the position of the fourth node on the metal layer where either end of the through hole is located, so as to determine the connection line of the fourth node on the metal layer where either end of the through hole is located. Figure 12 As shown in (d), the fourth node formed by the point at the center of the contact area between one end of the through hole and the metal line pattern is all connected to the fourth node formed by the point at the center of the through hole. That is, when there are three nodes at the A end of the through hole, these three nodes can be connected to obtain the connection line of the fourth node on the metal layer where the first end of the through hole (marked as A) is located. In addition, the fourth node in the current direction of the through hole can also be connected to determine the connection line of the fourth node in the current direction of the through hole. Figure 12 As shown in (d), after the midpoints of the first and second ends (labeled as B) of the through hole have been determined, the midpoints of the A and B ends can be connected to determine the connection line of the fourth node in the current direction of the through hole.

[0158] In one embodiment, before generating a parasitic resistance network of a target layout according to nodes of the resistance network, the method includes:

[0159] If the distance between any two nodes is less than the threshold, the two nodes are merged.

[0160] When the distance between any two nodes is less than a threshold, the two nodes may be merged to reduce the number of nodes in the resistance network.

[0161] In one embodiment, if the distance between any two nodes is less than a threshold, merging the two nodes includes:

[0162] When the distance between the midpoint of the contact area and the second node is less than a first threshold, the midpoint of the contact area and the second node are merged.

[0163] When the distance between the midpoint of the contact area and the fourth node is less than a second threshold, the midpoint of the contact area and the fourth node are merged.

[0164] When the distance between the midpoint of the contact area and the second node is less than the first threshold, it means that the midpoint of the contact area and the second node are relatively close, and the midpoint of the contact area and the second node can be merged to retain only the second node. Figure 11 ,because Figure 11 The distances between the midpoints of the contact areas of the two metal wire patterns on the left and the two metal wire patterns on the right and the determined second node are both less than the threshold. In this case, the midpoints of the contact areas can be merged with the second node. The merged effect is as follows: Figure 13 shown.

[0165] If, on the same metal layer, the distance between the midpoint of the contact area between the via and the metal line pattern and the midpoints of the two ends of the via is less than a second threshold, the fourth node having the closest position between the midpoint of the contact area between the via and the metal line pattern and the midpoints of the two ends of the via is merged. The first threshold and the second threshold may be the same or different.

[0166] In summary, in the parasitic resistance network generation method provided in the above embodiment, the nodes of the resistance network are generated by dotting on the layout through the current direction of the metal pattern and the surrounding metal pattern information, and then the parasitic resistance network of the layout is generated according to the nodes, thereby improving the accuracy and convenience of extracting the parasitic resistance of the layout.

[0167] Based on the same inventive concept as the above embodiments, an embodiment of the present invention provides a computing device, such as Figure 14 As shown, the computing device includes: a processor 310 and a memory 311 storing a computer program; wherein, Figure 14 The processor 310 shown in the figure is not used to indicate that the number of processors 310 is one, but is only used to indicate the positional relationship of the processor 310 relative to other devices. In actual applications, the number of processors 310 may be one or more; similarly, Figure 14 The memory 311 shown in the figure has the same meaning, that is, it is only used to refer to the position relationship of the memory 311 relative to other devices. In actual applications, the number of memories 311 can be one or more. When the processor 310 runs the computer program, the parasitic resistance network generation method applied to the above-mentioned computing device is implemented.

[0168] The computing device may also include: at least one network interface 312. The various components in the electronic device are coupled together via a bus system 313. It is understood that the bus system 313 is used to achieve connection and communication between these components. In addition to the data bus, the bus system 313 also includes a power bus, a control bus, and a status signal bus. However, for the sake of clarity, Figure 14 Various buses are labeled as bus system 313.

[0169] Memory 311 may be volatile memory or non-volatile memory, or may include both volatile and non-volatile memory. Non-volatile memory may include read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), ferromagnetic random access memory (FRAM), flash memory, magnetic surface memory, optical disk, or compact disc read-only memory (CD-ROM). Magnetic surface memory may include magnetic disk or tape memory. Volatile memory may include random access memory (RAM), which is used as an external cache. By way of example and not limitation, many forms of RAM are available, such as static random access memory (SRAM), synchronous static random access memory (SSRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDRSDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous link dynamic random access memory (SLDRAM), and direct rambus random access memory (DRRAM).The memory 311 described in the embodiments of the present invention is intended to include, but is not limited to, these and any other suitable types of memories.

[0170] Based on the same inventive concept as the above-mentioned embodiment, this embodiment further provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program. The computer-readable storage medium may be a magnetic random access memory (FRAM), a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), a flash memory, a magnetic surface memory, an optical disc, or a compact disc read-only memory (CD-ROM); or various devices including one or any combination of the above-mentioned memories, such as a mobile phone, a computer, a tablet device, a personal digital assistant, etc. When the computer program stored in the computer-readable storage medium is executed by a processor, the above-mentioned parasitic resistance network generation method is implemented. For the specific steps implemented when the computer program is executed by the processor, please refer to Figure 1 The description of the illustrated embodiment will not be repeated here.

[0171] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0172] As used herein, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion of elements other than the listed elements and may also include additional elements not specifically listed.

[0173] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A method for generating a parasitic resistance network, characterized in that: The method comprises: Obtain the current direction of the metal pattern in the target layout; Dotting the target layout to generate nodes of a resistor network according to the current direction of the metal pattern and the surrounding environment information of the metal pattern; the surrounding environment information is used to characterize the metal pattern information around the metal pattern in the target layout; Generating a parasitic resistance network of the target layout according to the nodes of the resistance network; The step of generating nodes of a resistance network by dotting on the target layout according to the current direction of the metal pattern and the surrounding environment information of the metal pattern includes: Determine the target dot metal pattern; Determining whether the surrounding environment information of the target dotted metal pattern has a contact area; If the contact area does not exist, determining the nodes of the resistor network on the target dotted metal pattern according to the current direction of the metal pattern; If the contact area exists, a node of the resistor network associated with the contact area is determined according to the midpoint of the contact area.

2. The method according to claim 1, characterized in that The obtaining of the current direction of the metal pattern in the target layout includes: Get the type of metal pattern in the target layout; If the type of the metal pattern is a metal line pattern, determining the current direction according to contact pattern information of the metal line pattern; If the type of the metal pattern is a through hole or a device pattern, the current direction is determined according to the electrical characteristics of the through hole or the device pattern.

3. The method according to claim 2, characterized in that If the type of the metal pattern is a metal line pattern, determining the current direction according to contact pattern information of the metal line pattern includes: If the contact pattern information indicates that there is no target contact pattern or there is only one target contact pattern that contacts one side of the metal line pattern and is located in the same metal layer, then determining the current direction of the metal pattern according to the direction of the metal line pattern; otherwise, determining the current direction of the metal pattern according to the enclosing rectangle formed by the target contact pattern; The target contact pattern is a pattern in the contact pattern information that is connected to the metal wire pattern.

4. The method according to claim 3, characterized in that The step of determining the current direction of the metal pattern according to the enclosing rectangle formed by the target contact pattern includes: If the contact pattern information is at least two target contact patterns that are in contact with multiple sides of the metal wire pattern and are in the same metal layer, an enclosing rectangle is determined based on the target contact pattern, and the current direction of the metal pattern is determined based on the direction of the enclosing rectangle and the metal wire pattern.

5. The method according to claim 3, characterized in that The step of determining the current direction of the metal pattern according to the enclosing rectangle formed by the target contact pattern includes: If the contact pattern information includes a through hole and / or an electrode on the metal line pattern as the target contact pattern, determining the current direction of the metal pattern according to an enclosing rectangle formed by the through hole and / or the electrode; Alternatively, the current direction of the metal pattern is determined according to an enclosing rectangle defined by the through hole and / or the electrode and other target contact patterns of the metal line pattern.

6. The method according to claim 4, characterized in that The determining of an enclosing rectangle according to the target contact pattern includes: When the target contact pattern is a metal line pattern of the same metal layer, an enclosing rectangle passing through the midpoints of all contact areas on the metal pattern is determined, wherein the contact area is an area where the metal pattern and the target contact pattern overlap.

7. The method according to claim 5, characterized in that The determining of the current direction of the metal pattern according to the enclosing rectangle determined by the through hole and / or the electrode and other target contact patterns of the metal line pattern includes: Determine the midpoint of the contact area on the metal pattern that passes through all other target contact patterns and the enclosing rectangle of the through hole and / or the electrode, and determine the current direction of the metal pattern based on the direction of the enclosing rectangle, wherein the other target contact patterns are metal patterns in the target contact pattern other than the through hole and / or the electrode.

8. The method according to any one of claims 3 to 7, characterized in that Determining the current direction of the metal pattern includes: When the direction of the enclosing rectangle is the same as the direction of the metal pattern, determining the direction of the metal wire pattern as the current direction of the metal pattern; When the direction of the enclosing rectangle is different from the direction of the metal pattern, the resistance components corresponding to the sides of the enclosing rectangle are calculated, and the direction of the side corresponding to the larger resistance component is determined as the current direction of the metal pattern.

9. The method according to claim 1, characterized in that If the target dotted metal pattern is a metal line pattern, then determining the nodes of the resistor network on the target dotted metal pattern includes: The midpoint of a side of the target dotted metal pattern that is perpendicular to a current direction of the target dotted metal pattern is determined as a first node of the resistor network.

10. The method according to claim 1, characterized in that If the target dotted metal pattern is a metal line pattern, determining a node of a resistor network associated with the contact area according to a midpoint of the contact area includes: Determine the midpoint of the contact area according to the contact area type; Determine a perpendicular line passing through the midpoint of the contact area and perpendicular to the current direction of the metal pattern to which the midpoint of the contact area belongs; determining a perpendicular midline of the metal wire pattern according to a current direction of the metal wire pattern; A second node of the resistor network is determined according to an intersection of the vertical line and the perpendicular midline.

11. The method according to claim 1, wherein If the target dotted metal pattern is a metal line pattern and includes a through hole or an electrode, determining the nodes of the resistor network on the target dotted metal pattern includes: A dot is placed on a through hole or an electrode on the target dotted metal line pattern to determine it as the third node of the resistor network.

12. The method according to claim 1, characterized in that If the target dotted metal pattern is a through hole, determining a node of a resistor network associated with the contact area according to a midpoint of the contact area includes: Dots are made at both ends of the through hole as the fourth node of the resistor network.

13. The method according to claim 12, characterized in that The method of marking two ends of the through hole as a fourth node of the resistor network includes: Determining a fourth node of the resistor network according to a midpoint of a contact area between any end of the through hole and a metal line pattern of the metal layer in which the through hole is located; And / or, the fourth node of the resistor network is determined according to the midpoint between the two ends of the through hole.

14. The method according to claim 1, wherein The target dotted metal pattern includes a metal line pattern and / or a through hole, and generating a parasitic resistance network of the target layout according to the nodes of the resistance network includes: sequentially connecting the nodes on the metal wire pattern along the current direction of the metal wire pattern to generate lines on the metal wire pattern; and / or, determining a connection line generated by a node on a metal layer where either end of the through hole is located; and / or, determining a connection line generated by a node in the current direction of the through hole; A parasitic resistance network of the target layout is generated according to the connection.

15. The method according to claim 1, wherein Before generating the parasitic resistance network of the target layout according to the nodes of the resistance network, the method includes: If the distance between any two nodes is less than the threshold, the two nodes are merged.

16. A computing device, characterized in that The invention comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein when the processor executes the computer program, the parasitic resistance network generating method according to any one of claims 1 to 15 is implemented. 17 . A computer-readable storage medium, wherein a computer program is stored in the computer-readable storage medium, and when the computer program is executed by a processor, the method for generating a parasitic resistance network according to claim 1 is implemented.

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