Display panel preparation method and display panel

Abstract

The invention discloses a display panel preparation method and a display panel, after a cathode of the display panel is prepared, aluminum vapor is introduced into the surface of the cathode, forward voltage is applied to all sub-pixels of the display panel, and a first preset duration is maintained, so that an aluminum oxide film is formed on the surface of a first foreign matter, the first foreign matter is completely covered by a light-emitting layer, and a second foreign matter is formed on the surface of the first foreign matter. And stopping introducing the aluminum vapor, and forming a packaging layer on one side, far away from the light-emitting layer, of the cathode. The insulating aluminum oxide layer is formed on the surface of the first foreign matter, so that the first foreign matter is insulated from the anode and the cathode, the situation that dark spots are newly added in the factory use process is avoided, and the repair rate and the after-sale cost are reduced.

Description

Technical Field

[0001] The present invention relates to display technology, and in particular to a display panel manufacturing method and a display panel. Background Art

[0002] The organic light emitting display panel is a self-luminous display panel that emits light by exciting organic compounds. The organic light emitting display panel does not require a backlight unit used in a liquid crystal display panel, and thus has a thin profile and light weight as well as a simple manufacturing process.

[0003] In the process of preparing the organic light-emitting display panel, the anode of the sub-pixel is first prepared, then the organic light-emitting layer is prepared on the anode, and then the cathode is prepared on the organic light-emitting layer. In the process of preparing the organic light-emitting layer, if there is foreign matter on the anode, in the subsequent user use, as the use time increases, it may cause the anode and cathode of the sub-pixel to short-circuit, making the sub-pixel a "dark spot" that cannot emit light. When the number of "dark spots" increases to a certain value, it affects the display effect, resulting in an increase in the return rate and increased after-sales costs. Summary of the invention

[0004] The present invention provides a display panel preparation method and a display panel, which can form an aluminum oxide film on the surface of the sub-pixels where foreign matter exists during the display panel preparation process, thereby avoiding the problem of an increase in the number of "dark spots" as the use time increases, and reducing the return rate and after-sales costs.

[0005] In a first aspect, the present invention provides a method for preparing a display panel, comprising:

[0006] After preparing the cathode of the display panel, aluminum vapor is introduced to the surface of the cathode;

[0007] Applying a forward voltage to all sub-pixels of the display panel and maintaining it for a first preset time to form an aluminum oxide film on the surface of the first foreign object, wherein the first foreign object is completely covered by the light-emitting layer of the sub-pixel;

[0008] Stop the aluminum vapor flow;

[0009] An encapsulation layer is formed on a side of the cathode away from the light-emitting layer.

[0010] Optionally, before stopping the introduction of aluminum vapor, the method further comprises:

[0011] A reverse voltage is applied to all the sub-pixels and maintained for a second preset time to form an aluminum oxide film on the surface of a second foreign object, wherein the second foreign object is partially covered by the light-emitting layer.

[0012] Optionally, the reverse voltage is less than a reverse breakdown voltage of the sub-pixel.

[0013] Optionally, before introducing aluminum vapor to the cathode surface, the method further comprises:

[0014] Providing a substrate, wherein the substrate is divided into a plurality of sub-pixel regions, wherein the sub-pixel regions include a light-emitting region and a non-light-emitting region;

[0015] forming a driving circuit in a non-luminous area on one side of the substrate;

[0016] forming a filter layer in a light emitting region on one side of the substrate;

[0017] Sub-pixels are formed on a side of the filter layer away from the substrate.

[0018] Optionally, before forming the driving circuit in the non-luminous area on one side of the substrate, the method further includes:

[0019] A light absorbing layer is formed in a non-light emitting region on one side of the substrate.

[0020] Optionally, the driving circuit includes a driving transistor, and the driving circuit is formed in a non-luminous area on one side of the substrate, including:

[0021] forming a buffer layer on a side of the light absorbing layer away from the substrate;

[0022] forming an active layer on a side of the buffer layer away from the light absorbing layer;

[0023] forming a source electrode and a drain electrode of the driving transistor on a side of the active layer away from the buffer layer;

[0024] forming a gate insulating layer on a side of the source electrode and the drain electrode away from the active layer;

[0025] A gate is formed on a side of the gate insulating layer away from the source and the drain.

[0026] Optionally, forming a sub-pixel on a side of the filter layer away from the substrate includes:

[0027] Forming a planarization layer on a side of the gate away from the gate insulating layer, wherein the planarization layer covers both the light-emitting area and the non-light-emitting area;

[0028] forming an anode on the planarization layer of the light emitting region, wherein the anode has a first extension portion penetrating the planarization layer, and the first extension portion is connected to the drain of the driving transistor;

[0029] forming a dam layer on the planarization layer in the non-light-emitting area, wherein the dam layer is provided with a plurality of openings;

[0030] forming the light-emitting layer on a side of the anode away from the planarization layer, wherein the light-emitting layer is formed in the opening of the dam layer;

[0031] The cathode is formed on a side of the light emitting layer away from the anode.

[0032] Optionally, while forming the anode on the planarization layer of the light-emitting area, the method further comprises:

[0033] A power line is formed on the planarization layer in the non-light emitting area, wherein the power line has a second extension portion penetrating the planarization layer, and the second extension portion is connected to the source electrode of the driving transistor.

[0034] Optionally, while forming a driving circuit in the non-luminous area on one side of the substrate, the method further includes:

[0035] A power line, a data line, a scan line, an initialization signal line and a reference voltage line connected to the driving circuit are formed in a non-luminous area on one side of the substrate.

[0036] In a second aspect, the present invention provides a display panel, which is prepared by the display panel preparation method provided by any of the aforementioned embodiments of the present invention.

[0037] The display panel preparation method provided by the present invention, after preparing the cathode of the display panel, aluminum vapor is introduced into the cathode surface, the display panel includes a plurality of sub-pixels, the sub-pixels include an anode, a light-emitting layer and a cathode, the light-emitting layer is formed on one side of the anode, and the cathode is formed on the side of the light-emitting layer away from the anode, a forward voltage is applied to all sub-pixels, and a first preset time is maintained to form an aluminum oxide film on the surface of the first foreign body, wherein the first foreign body is completely covered by the light-emitting layer, the introduction of aluminum vapor is stopped, and an encapsulation layer is formed on the side of the cathode away from the light-emitting layer. Since a layer of insulating aluminum oxide is formed on the surface of the first foreign body, the first foreign body is insulated from the anode and the cathode, thereby avoiding the situation of adding a "dark spot" during factory use, and reducing the repair rate and after-sales cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] The present invention is further described in detail below based on the accompanying drawings and embodiments.

[0039] Figure 1 A flow chart of a method for preparing a display panel provided by the present invention;

[0040] Figure 2 A schematic diagram of the structure of a driving circuit provided by the present invention;

[0041] Figure 3 A flow chart of the preparation of a driving circuit provided by the present invention;

[0042] Figure 4A schematic diagram of the oxidation process of the surface of the first foreign object after a forward voltage is applied to a sub-pixel;

[0043] Figure 5 A schematic diagram of the oxidation process of the surface of the second foreign object after a reverse voltage is applied to a sub-pixel;

[0044] Figure 6 A schematic structural diagram of a display panel provided by the present invention. DETAILED DESCRIPTION

[0045] In order to make the technical problems solved by the present invention, the technical solutions adopted and the technical effects achieved clearer, the technical solutions of the embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0046] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0047] In the present invention, unless otherwise clearly specified and limited, the first feature being "above" or "below" the second feature may include the first and second features being in direct contact, or may include the first and second features not being in direct contact but being in contact through another feature between them. Moreover, the first feature being "above", "above" and "above" the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature includes the first feature being directly below and obliquely below the second feature, or simply means that the first feature is lower in level than the second feature. In addition, the terms "first" and "second" are only used to distinguish in description and have no special meaning.

[0048] Figure 1 A flow chart of a method for preparing a display panel provided by the present invention, such as Figure 1 As shown, the display panel preparation method includes:

[0049] S101. Provide a substrate.

[0050] like Figure 1As shown, the substrate 101 may be a transparent glass substrate or a transparent organic material substrate, which is not limited in the present embodiment. The substrate 101 is divided into a plurality of sub-pixel regions (only one of which is shown in the figure), and the sub-pixel regions include a light-emitting region LA and a non-light-emitting region BA.

[0051] S102, forming a light absorbing layer in a non-luminescent area on one side of the substrate.

[0052] like Figure 1 As shown, a light absorbing layer 102 is formed in the non-luminous area BA on one side of the substrate 101. The light absorbing layer 102 has a light absorbing function. When the external ambient light irradiates the light absorbing layer 102, the light absorbing layer 102 can absorb most of the light in the visible light band, thereby preventing the external ambient light from being reflected by the subsequent metal layer, causing the problem of reflection of the display panel, and enhancing the display effect.

[0053] S103, forming a buffer layer on a side of the light absorbing layer away from the substrate.

[0054] like Figure 1 As shown, a buffer layer 103 is formed on a side of the light absorbing layer 102 away from the substrate 101 , and the buffer layer 103 is made of an insulating material.

[0055] S104, forming a driving circuit on a side of the buffer layer away from the light absorbing layer.

[0056] like Figure 1 As shown, a driving circuit Circuit is formed on the side of the buffer layer 103 away from the light absorbing layer 102. The driving circuit Circuit includes a driving transistor, which includes other switching transistors and a capacitor, and the embodiment of the present invention is not limited here. Figure 1 An exemplary description is given using a cross-sectional view including a driving transistor.

[0057] Figure 2 A schematic diagram of a driving circuit provided by the present invention is shown in FIG. Figure 2As shown, the driving circuit includes a driving transistor DT, a first switching transistor ST1, a second switching transistor ST2 and a capacitor Cst, the source of the driving transistor DT is connected to the power line VDD, the drain of the driving transistor DT is connected to the anode of the organic light emitting diode OLED, the cathode of the organic light emitting diode OLED is connected to the low voltage source VSS, the first end of the first switching transistor ST1 is connected to the data line Data, the second end of the first switching transistor ST1 is connected to the gate of the driving transistor DT, the control end of the first switching transistor ST1 is connected to the scanning signal line Scan, the first end of the second switching transistor ST2 is connected to the reference voltage line Vref, the second end of the second switching transistor ST2 is connected to the drain of the driving transistor DT, the control end of the second switching transistor ST2 is connected to the initialization signal line Sense, the first end of the capacitor Cst is connected to the gate of the driving transistor DT, and the second end of the capacitor Cst is connected to the drain of the driving transistor DT.

[0058] Exemplarily, in the initialization stage t1, the initialization signal line Sense provides a high level, controls the second switch transistor ST2 to be turned on, initializes the drain of the capacitor Cst and the driving transistor DT, and initializes the potential of the capacitor Cst and the drain of the driving transistor DT to the reference voltage provided by the reference voltage line Vref. Exemplarily, the reference voltage is a constant low-level voltage. In the data writing stage t2, the initialization signal line Sense continuously provides a high level, the scanning signal line Scan provides a high level, the first switch transistor ST1 and the second switch transistor ST2 are both turned on, and the data signal provided by the data line Data is written into the control end of the driving transistor DT, that is, the capacitor Cst is charged, and the potential of the control end of the driving transistor DT is gradually raised. When the potential of the control end of the driving transistor DT reaches the driving transistor DT on potential, the scanning signal line Scan and the initialization signal line Sense both provide low-level signals, the first switch transistor ST1 and the second switch transistor ST2 are both turned off, the driving transistor DT is turned on, and the light-emitting stage t3 is entered. The power supply voltage provided by the power line VDD and the low voltage provided by the low voltage source VSS form a driving current on the driving transistor DT and the organic light-emitting diode OLED, driving the organic light-emitting diode OLED to emit light, and the capacitor Cst is discharged to maintain the high level of the gate of the driving transistor DT, and maintain the organic light-emitting diode OLED to continue to emit light. After the light-emitting stage t3 ends, the initialization stage t1 is entered again, and the cycle is repeated.

[0059] Figure 3 A preparation flow chart of a driving circuit provided by the present invention, Figure 3 An exemplary description is given with a cross-sectional view including a driving transistor, as shown in FIG. Figure 3 As shown, the preparation process of the driving circuit includes:

[0060] S1041 . Form an active layer on a side of the buffer layer away from the light absorbing layer.

[0061] like Figure 3 As shown, an active layer 105 is formed on a side of the buffer layer 103 away from the light absorbing layer 102 .

[0062] S1042 , forming a source and a drain of a driving transistor on a side of the active layer away from the buffer layer.

[0063] like Figure 3 As shown, a source 1041 and a drain 1042 of the driving transistor DT are formed on a side of the active layer 105 away from the buffer layer 103. The source 1041 is used to connect to a subsequent power line, and the drain 1042 is used to connect to a subsequent anode.

[0064] S1043, forming a gate insulating layer on a side of the source and drain away from the active layer.

[0065] like Figure 3 As shown, a gate insulating layer 106 is formed on the side of the source electrode 1041 and the drain electrode 1042 away from the active layer 105 , and the gate insulating layer 106 covers the source electrode 1041 and the drain electrode 1042 .

[0066] S1044, forming a gate on a side of the gate insulating layer away from the active layer.

[0067] like Figure 3 As shown, a gate 107 is formed on a side of the gate insulating layer 106 away from the active layer 105 .

[0068] In an embodiment of the present invention, the above-mentioned power line, data line, scan line, initialization signal line and reference voltage line can be prepared together with the driving circuit. For example, when preparing one of the electrodes of the capacitor Cst of the driving circuit, the data line, scan line, initialization signal line or reference voltage line is prepared. The embodiment of the present invention is not limited here.

[0069] S105, forming a filter layer in the light emitting area on one side of the substrate.

[0070] like Figure 1 As shown, a filter layer 114 is formed in the light emitting area LA on one side of the substrate 101 .

[0071] S106, forming a planarization layer on a side of the gate away from the gate insulating layer, wherein the planarization layer covers both the light-emitting area and the non-light-emitting area.

[0072] like Figure 1 As shown, a planarization layer 108 is formed on a side of the gate 107 away from the gate insulating layer 106 , and the planarization layer 108 covers both the light emitting area LA and the non-light emitting area BA.

[0073] S107 , forming an anode on the planarization layer of the light-emitting region, wherein the anode has a first extension portion penetrating the planarization layer, and the first extension portion is connected to the drain of the driving transistor.

[0074] like Figure 1 As shown, an anode 109 is formed on the planarization layer 108 of the light emitting area LA. The anode 109 has a first extension portion 1091 penetrating the planarization layer 108 and the gate insulating layer 106 . The first extension portion 1091 is connected to the drain 1042 of the driving transistor.

[0075] like Figure 1 As shown, while an anode 109 is formed on the planarization layer 108 of the light-emitting area LA, a power line VDD is formed on the planarization layer 108 of the non-light-emitting area BA. The power line VDD has a second extension portion VD1 that passes through the planarization layer 108 and the gate insulating layer 106. The second extension portion VD1 is connected to the source 1041 of the driving transistor.

[0076] S108 , forming a dam layer on the planarization layer in the non-luminescent region, wherein the dam layer is provided with a plurality of openings.

[0077] like Figure 1 As shown, a dam layer 110 is formed on the side of the anode 109 away from the planarization layer 108, the dam layer 110 is patterned, and an opening is provided at a position corresponding to the light-emitting area LA. Exemplarily, the dam layer 110 is formed in the non-light-emitting area BA and the area between the adjacent sub-pixels, and an opening is provided at a position corresponding to the light-emitting area LA, and the dam layer 110 is used to form a black matrix between the sub-pixels.

[0078] S109, forming a light-emitting layer on a side of the anode away from the planarization layer, wherein the light-emitting layer is formed in the opening of the dam layer.

[0079] like Figure 1 As shown, a light emitting layer 111 is formed on a side of the anode 109 away from the planarization layer 108. Exemplarily, the light emitting layer 111 is formed in an opening of the bank layer 110.

[0080] S110, forming a cathode on a side of the light-emitting layer away from the anode.

[0081] like Figure 1 As shown, a cathode 112 is formed on a side of the light emitting layer 111 away from the anode 109 .

[0082] S111. Introduce aluminum vapor into the cathode surface.

[0083] After the cathode 112 is formed, the display panel is usually placed in a closed space, and aluminum vapor is then introduced into the space.

[0084] S112, applying a forward voltage to all sub-pixels and maintaining it for a first preset time to form an aluminum oxide film on the surface of the first foreign object.

[0085] In an atmosphere of aluminum vapor, a forward voltage is applied to all sub-pixels and maintained for a first preset time to form an aluminum oxide film on the surface of the first foreign object, wherein the first foreign object is completely covered by the light-emitting layer.

[0086] Figure 4 FIG. 1 is a schematic diagram of the oxidation process of the surface of the first foreign matter after a forward voltage is applied to the sub-pixel. Figure 4 As shown, before applying the forward voltage, if there is a first foreign matter P1 on the surface of the anode 109 , the particle diameter of the first foreign matter P1 is small and is completely covered by the subsequently formed light-emitting layer 111 , that is, the first foreign matter P1 does not contact the cathode 112 .

[0087] During the process of applying a forward voltage, the light-emitting layer 111 emits light, and current flows through the light-emitting layer 111. Since the area in the light-emitting layer 111 that contacts the first foreign body P1 has a lower impedance than other areas, the current will be concentrated in the area in contact with the first foreign body P1, causing the area to heat up strongly, and the first foreign body P1 will be deformed by the heat, and will migrate to the cathode 112 under the drive of the current. The first foreign body P1 contacts the cathode 112 and punctures the cathode 112. After puncturing the cathode 112, aluminum vapor and oxygen will enter the light-emitting layer 111 and adhere to the surface of the first foreign body P1. Under the action of high temperature, the aluminum attached to the surface of the first foreign body P1 is rapidly oxidized to form aluminum oxide 115, and the previously punctured gap is re-sealed. Since a layer of insulating aluminum oxide 115 is formed on the surface of the first foreign body P1, the first foreign body P1 is insulated from the anode 109 and the cathode 112, thereby avoiding the situation of adding a "dark spot" during factory use, reducing the return rate and after-sales cost.

[0088] S113, applying a reverse voltage to all sub-pixels and maintaining it for a second preset time to form an aluminum oxide film on the surface of the second foreign object.

[0089] In an atmosphere of aluminum vapor, a reverse voltage is applied to all sub-pixels and maintained for a second preset time to form an aluminum oxide film on the surface of the second foreign object. The second foreign object is partially covered by the light-emitting layer. The reverse voltage is less than the reverse breakdown voltage of the sub-pixel to prevent the sub-pixel from being reversely broken down.

[0090] Figure 5 FIG. 1 is a schematic diagram of the oxidation process of the second foreign body surface after a reverse voltage is applied to the sub-pixel. Figure 5As shown, before the reverse voltage is applied, if there is a second foreign object P2 on the surface of the anode 109, the particle diameter of the second foreign object P2 is relatively large and cannot be completely covered by the subsequently formed light-emitting layer 111 and cathode 112, and there are gaps or notches around the second foreign object P2. The cathode 112 will still be in contact with the second foreign object P2.

[0091] During the process of applying reverse voltage, the light-emitting layer 111 does not emit light, and no current flows through the light-emitting layer 111. However, since the second foreign body P2 connects the anode 109 and the cathode 112, current flows through the second foreign body P2 and generates heat. Aluminum vapor and oxygen will enter the light-emitting layer 111 through the gaps or notches and adhere to the surface of the second foreign body P2. Under the action of high temperature, the aluminum attached to the surface of the second foreign body P2 is rapidly oxidized to form aluminum oxide 116, and the gaps or notches are blocked. Since a layer of insulating aluminum oxide 116 is formed on the surface of the second foreign body P2, the second foreign body P2 is insulated from the anode 109 and the cathode 112, thereby avoiding the addition of "dark spots" during factory use and reducing the repair rate and after-sales costs.

[0092] S114. Stop introducing aluminum vapor.

[0093] After completing the above steps S112 and S113, stop introducing aluminum vapor.

[0094] S115, forming an encapsulation layer on a side of the cathode away from the light-emitting layer.

[0095] like Figure 1 As shown, an encapsulation layer 113 is formed on a side of the cathode 112 away from the light-emitting layer 111 , and the encapsulation layer 113 covers the cathode 112 and the bank layer 110 .

[0096] The display panel preparation method provided by the present invention, after preparing the cathode of the display panel, aluminum vapor is introduced into the cathode surface, the display panel includes a plurality of sub-pixels, the sub-pixels include an anode, a light-emitting layer and a cathode, the light-emitting layer is formed on one side of the anode, and the cathode is formed on the side of the light-emitting layer away from the anode, a forward voltage is applied to all sub-pixels, and a first preset time is maintained to form an aluminum oxide film on the surface of the first foreign body, wherein the first foreign body is completely covered by the light-emitting layer, the introduction of aluminum vapor is stopped, and an encapsulation layer is formed on the side of the cathode away from the light-emitting layer. Since a layer of insulating aluminum oxide is formed on the surface of the first foreign body, the first foreign body is insulated from the anode and the cathode, thereby avoiding the situation of adding a "dark spot" during factory use, and reducing the repair rate and after-sales cost.

[0097] Figure 6 Schematic diagram of the structure of a display panel provided by the present invention, the display panel is prepared by the display panel preparation method provided by the above embodiment of the present invention, such as Figure 6As shown, the display panel includes a plurality of sub-pixels Pixel, each of which includes a light-emitting area LA and a non-light-emitting area BA. A filter layer ( Figure 2 A driving circuit is formed in the non-luminous area BA, and the driving circuit is connected to the metal wiring metal hole. The metal wiring can be a power line, a data line, a scan line, an initialization signal line or a reference voltage line, which is not limited in the embodiment of the present invention.

[0098] like Figure 6 As shown, the display panel includes a plurality of pixel units Cell, each pixel unit Cell includes four sub-pixels Pixel, which are respectively the first sub-pixel R, the second sub-pixel G, the third sub-pixel B and the fourth sub-pixel W along the row direction, and emit red light, green light, blue light and white light respectively. Of course, in other embodiments of the present invention, the sub-pixels in the pixel unit may also be arranged in other orders, and the present invention does not limit the arrangement order of R, G, B, and W.

[0099] like Figure 6 As shown, the power line is arranged between the adjacent fourth sub-pixel W and the first sub-pixel R. In the same display unit Cell, the first sub-pixel R and the second sub-pixel G share a first power line VDD1, and the third sub-pixel B and the fourth sub-pixel W share a second power line VDD2. That is, the source electrodes of the driving transistors DT of the first sub-pixel R and the second sub-pixel G are both connected to the first power line VDD1, and the source electrodes of the driving transistors DT of the third sub-pixel B and the fourth sub-pixel W are both connected to the second power line VDD2.

[0100] A first data line Data1 and a second data line Data2 are provided between the first sub-pixel R and the second sub-pixel G. The first sub-pixel R is connected to the first data line Data1, that is, the first end of the first switch transistor ST1 of the first sub-pixel R is connected to the first data line Data1; the second sub-pixel G is connected to the second data line Data2, that is, the first end of the first switch transistor ST1 of the second sub-pixel R is connected to the second data line Data2. A third data line Data3 and a fourth data line Data4 are provided between the third sub-pixel B and the fourth sub-pixel W. The third sub-pixel B is connected to the third data line Data3, that is, the first end of the first switch transistor ST1 of the third sub-pixel B is connected to the third data line Data3; the fourth sub-pixel W is connected to the fourth data line Data4, that is, the first end of the first switch transistor ST1 of the fourth sub-pixel W is connected to the fourth data line Data4.

[0101] The scan line Scan and the initialization signal line Sense are arranged between two adjacent rows of sub-pixels, and the sub-pixels in the same row are connected to a corresponding scan line Scan and an initialization signal line Sense, that is, the gates of the first switching transistors ST1 of all sub-pixels in the same row of sub-pixels are connected to an adjacent scan line Scan, and the gates of the second switching transistors ST2 of all sub-pixels are connected to an adjacent initialization signal line Sense.

[0102] The reference voltage line Vref is arranged between the second sub-pixel G and the third sub-pixel B. The four sub-pixels in the pixel unit Cell share the reference voltage line Vref, that is, the first ends of the second switch transistors ST2 of the four sub-pixels in the pixel unit Cell are all connected to the reference voltage line Vref.

[0103] In the description of this article, it is necessary to understand that the terms "up", "down", "left", "right", and other orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0104] In the description of this specification, the description with reference to the terms "an embodiment", "example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example.

[0105] In addition, it should be understood that although this specification is described according to implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.

[0106] The technical principle of the present invention is described above in conjunction with specific embodiments. These descriptions are only for explaining the principle of the present invention and cannot be interpreted as limiting the scope of protection of the present invention in any way. Based on the explanations herein, those skilled in the art can associate other specific implementations of the present invention without paying creative labor, and these methods will fall within the scope of protection of the present invention.

Claims

1. A method for preparing a display panel, characterized in that: include: After preparing the cathode of the display panel, aluminum vapor is introduced to the surface of the cathode; Applying a forward voltage to all sub-pixels of the display panel and maintaining it for a first preset time to form an aluminum oxide film on the surface of the first foreign object, wherein the first foreign object is completely covered by the light-emitting layer of the sub-pixel; Stop the introduction of aluminum vapor; An encapsulation layer is formed on a side of the cathode away from the light-emitting layer.

2. The method for preparing a display panel according to claim 1, characterized in that: Before stopping the introduction of aluminum vapor, it also includes: A reverse voltage is applied to all the sub-pixels and maintained for a second preset time to form an aluminum oxide film on the surface of a second foreign object, wherein the second foreign object is partially covered by the light-emitting layer.

3. The method for preparing a display panel according to claim 2, wherein: The reverse voltage is less than a reverse breakdown voltage of the sub-pixel.

4. The method for preparing a display panel according to any one of claims 1 to 3, characterized in that: Before introducing aluminum vapor to the cathode surface, the method further comprises: Providing a substrate, wherein the substrate is divided into a plurality of sub-pixel regions, wherein the sub-pixel regions include a light-emitting region and a non-light-emitting region; forming a driving circuit in a non-luminous area on one side of the substrate; forming a filter layer in a light emitting region on one side of the substrate; Sub-pixels are formed on a side of the filter layer away from the substrate.

5. The method for preparing a display panel according to claim 4, characterized in that: Before forming a driving circuit in the non-luminous area on one side of the substrate, the method further includes: A light absorbing layer is formed in a non-light emitting region on one side of the substrate.

6. The method for preparing a display panel according to claim 5, characterized in that: The driving circuit includes a driving transistor, and the driving circuit is formed in a non-luminous area on one side of the substrate, including: forming a buffer layer on a side of the light absorbing layer away from the substrate; forming an active layer on a side of the buffer layer away from the light absorbing layer; forming a source electrode and a drain electrode of the driving transistor on a side of the active layer away from the buffer layer; forming a gate insulating layer on a side of the source electrode and the drain electrode away from the active layer; A gate is formed on a side of the gate insulating layer away from the source and the drain.

7. The method for preparing a display panel according to claim 6, wherein: Sub-pixels are formed on a side of the filter layer away from the substrate, comprising: Forming a planarization layer on a side of the gate away from the gate insulating layer, wherein the planarization layer covers both the light-emitting area and the non-light-emitting area; forming an anode on the planarization layer of the light emitting region, wherein the anode has a first extension portion penetrating the planarization layer, and the first extension portion is connected to the drain of the driving transistor; forming a dam layer on the planarization layer in the non-light-emitting area, wherein the dam layer is provided with a plurality of openings; forming the light-emitting layer on a side of the anode away from the planarization layer, wherein the light-emitting layer is formed in the opening of the dam layer; The cathode is formed on a side of the light emitting layer away from the anode.

8. The method for preparing a display panel according to claim 7, characterized in that: While forming the anode on the planarization layer of the light emitting area, the method further comprises: A power line is formed on the planarization layer in the non-light emitting area, wherein the power line has a second extension portion penetrating the planarization layer, and the second extension portion is connected to the source electrode of the driving transistor.

9. The method for preparing a display panel according to claim 4, characterized in that: While forming a driving circuit in a non-luminous area on one side of the substrate, the invention also includes: A power line, a data line, a scan line, an initialization signal line and a reference voltage line connected to the driving circuit are formed in a non-luminous area on one side of the substrate.

10. A display panel, characterized in that: The display panel is prepared by the method for preparing the display panel as described in any one of claims 1 to 9.

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