A semiconductor device, memory, and storage system

By doping the gate layer material with materials such as Ga2Te3, the amorphous thermal stability of the gate layer is improved, solving the problem of poor thermal stability of the gate layer material and improving the reliability of semiconductor devices and memories.

CN119451553BActive Publication Date: 2026-07-07新存科技(武汉)有限责任公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
新存科技(武汉)有限责任公司
Filing Date
2024-10-11
Publication Date
2026-07-07

AI Technical Summary

Technical Problem

In existing phase-change memories, the amorphous thermal stability of the gate layer material is poor, which leads to unstable electrical characteristics of the gate transistor and affects the reliability of the memory.

Method used

A gate layer material comprising a host material and a first doped material is adopted. The first doped material has a stable tetrahedral structure in the amorphous state. By doping materials such as Ga2Te3 into the host material, the content of the more stable tetrahedral structure in the gate layer material is increased, thereby improving the crystallization temperature and amorphous thermal stability.

Benefits of technology

It improves the stability of the electrical characteristics of the gating layer, enhances the reliability of semiconductor devices and memories, and does not require changes to the structural architecture of semiconductor devices, making it widely applicable.

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Abstract

The application relates to a semiconductor device, a memory and a storage system, the semiconductor device comprising a gating layer having a bidirectional threshold switching characteristic, the material of the gating layer comprising a host material and a first doped material doped in the host material. Both the host material and the first doped material contain a chalcogenide compound, and the first doped material has a stable tetrahedral structure in an amorphous state. By doping the first doped material having a stable tetrahedral structure in an amorphous state in the host material of the gating layer, the application can effectively improve the amorphous thermal stability of the material of the gating layer, thereby improving the stability of the electrical characteristics of the gating layer, and further improving the reliability of the semiconductor device.
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