A silylated polyphenylene ether resin, a preparation method thereof, a high-temperature resistant and low-dielectric material, and a preparation method thereof

Abstract

The present invention discloses a silylated polyphenylene ether resin and its preparation method, a high-temperature resistant and low-dielectric material and its preparation method. The preparation method of the high-temperature resistant and low-dielectric material includes: reacting a polyphenylene ether resin with a brominating agent to obtain a brominated polyphenylene ether resin, and then subjecting the brominated polyphenylene ether to an amination reaction with allylamine to obtain a polyphenylene ether resin with a high allyl content; under the action of a photoinitiator, a silylated polyphenylene ether resin is obtained through a thiol-ene click chemical reaction of the allyl polyphenylene ether resin with a mercapto silane under ultraviolet light conditions, or a silylated polyphenylene ether resin is obtained through a hydrosilylation reaction of the allyl polyphenylene ether resin with a hydrosilane under the action of a catalyst; and wet curing is carried out under the action of a catalyst to obtain a high-temperature resistant and low-dielectric material with excellent properties. The preparation and curing methods of the present invention are simple, the raw materials are easily obtained, wet curing can be realized, and the cured material has the characteristics of excellent high-temperature resistance and low-dielectric properties.

Description

Technical Field

[0001] The present invention relates to the field of synthesis and preparation of polymer materials, and particularly relates to a silylated polyphenylene ether resin and a preparation method thereof, a high-temperature resistant and low-dielectric material and a preparation method thereof. Background Art

[0002] Polyphenylene ether resins are commonly used in the fields of electronics and electrical engineering, automotive industry, mechanical industry, chemical components, etc. due to their excellent mechanical strength, creep resistance, heat resistance, flame retardancy, water resistance and low dielectric properties. However, due to the lack of active functional groups, high melt viscosity, poor fluidity and difficult processing and molding, the actual applications are mostly polyphenylene ether blends or alloys, such as polystyrene, polyamide, polyphenylene sulfide, polysiloxane and other elastomers. Their processing temperature is relatively high, and the blends themselves have a great impact on the dielectric properties, moisture absorption properties, mechanical properties, heat resistance properties, etc. of polyphenylene ether, thus greatly limiting the application of polyphenylene ether resins in the field of electronic materials. In addition, for the active functionalization of polyphenylene ether resins, it mainly includes end-group epoxidation and allylation. For such bifunctional end-group modification with respect to polyphenylene ether resins with relatively large molecular weights, the crosslinking density after curing is not high, affecting their heat resistance and dielectric properties. Especially, epoxidation increases the content of polar groups, and the generated hydroxyl groups after ring opening have a relatively high polarizability, which is not conducive to applications in low-dielectric scenarios. Therefore, non-polar / weakly polar multi-active-site curing to improve the heat resistance, low-dielectric properties and mechanical properties of polyphenylene ether resins is an effective strategy to solve this problem and is of great significance for the application of polyphenylene ether resins in the field of electronic materials.

[0003] In terms of polyphenylene ether modification, by selecting non-polar or weakly polar polymers with good heat resistance performance for copolymerization, its mechanical properties and heat resistance are improved on the basis of low dielectric properties. For the problem of insufficient dielectric properties of the polyphenylene ether / polyimide alloy in the invention patent CN118515878A (Chen Xing, Hou Songbin, Ma Junxian, etc.), through the reaction, the molecular-level block copolymerization of polyphenylene ether / polyimide is realized, achieving the reduction of dielectric properties and ensuring heat resistance so that it can be used in the field of high-speed and high-frequency electronic product packaging. However, this method optimizes the dielectric properties on the basis of ensuring the heat resistance of the polyphenylene ether / polyimide alloy. The polyimide block itself has a large dipole moment, which is not conducive to the dielectric properties of the polyphenylene ether resin. In addition, this material is a copolymer of two rigid heat-resistant resin structures, with a large melt viscosity and no active functional groups, making it difficult to form a crosslinked network, which affects its mechanical properties. In the invention patent CN117794982A (F. Sandmayer), a homopolymer or copolymer of polyphenylene ether terminated with hydroxyl groups and a phenolic compound are used to prepare a binder for a molded article with constant dielectric properties in the presence of chlorosilane and water. This method is based on the reaction of chlorosilane with water to generate silanol, which then dehydrates with the hydroxyl-terminated polyphenylene ether to form a crosslinked product. Chlorosilane plays the role of a crosslinking point. During this reaction process, the reaction of chlorosilane with water will generate weakly acidic silicic acid, which is not conducive to the reduction of dielectric properties. In addition, free chloride ions are contained in chlorosilicic acid, which will promote the dissolution reaction of metals in electronic devices, accelerate ion migration, and deteriorate the performance of the devices. Further, the reaction of chlorosilicic acid with water will generate HCl, which has strong corrosiveness to electronic devices. This material is not suitable for the packaging of microelectronic materials. Generally, the method to reduce the dielectric constant of a material is to reduce its polarizability and dipole moment at the molecular level and increase the free volume of the material. Since fluorine has a large atomic radius, it can increase the free volume, and the C-F bond has a small dipole and low polarizability. Therefore, introducing fluorine into the material is an effective way. In the invention patent CN110746594A (Zhang Cailiang, Song Shungang, Yan Qinyu, etc.), low molecular weight fluorinated polyphenylene ether is obtained through the redistribution reaction of low molecular weight polyphenylene ether, fluorinated polyphenol compounds, and free radical initiators in an organic solvent followed by post-treatment. The resulting composite material has a lower dielectric constant, dielectric loss factor, and water absorption rate compared to similar materials without fluorine. However, the low molecular weight fluorinated polyphenylene ether material obtained by this method only optimizes the molecular chain and does not have activity. It needs to be blended and cured with epoxy resin. The compatibility of the polar and non-polar heterogeneous structure resins is poor, and the relatively small amount of fluorinated polyphenylene ether greatly weakens the comprehensive performance of the material. Summary of the Invention

[0004] In view of the problems existing in the background art, the purpose of the present invention is to provide a silanized polyphenylene ether resin and its preparation method, a high-temperature resistant and low-dielectric material and its preparation method. First, by preparing a side allyl polyphenylene ether resin, a diallyl structure is introduced into the molecular structure of the polyphenylene ether, which significantly increases the content of the active functional group allyl in the resin compared with the traditional terminal allyl type polyphenylene ether. Through the Click reaction or hydrosilylation reaction of the double bond with mercapto silane, a short chain of silane small molecules containing multiple methoxy and ethoxy groups is introduced into the polyphenylene ether resin, and this multi-active site can undergo a wet curing reaction with water molecules in the air to further form. This resin does not contain strong polar groups, and the non-polar silane chain segment ensures low dielectric performance. Moreover, the rigid backbone of the polyphenylene ether and the multi-functional crosslinking of the short branched-chain silane increase the crosslinking density, improve the heat resistance performance, and maintain excellent hydrophobicity and flame retardancy. And the solvent method improves its processability and the interaction force with various fillers. The wet curing method is simple in construction and can be applied to multiple environments, especially has great significance for the practical application in the electronics industry.

[0005] One of the purposes of the present invention is to provide a preparation method of a silanized polyphenylene ether resin, which includes the following steps: (1) reacting polyphenylene ether with a brominating agent to obtain brominated polyphenylene ether; (2) reacting brominated polyphenylene ether with an allyl compound to obtain an allyl polyphenylene ether resin; (3) reacting the allyl polyphenylene ether resin with mercapto silane or hydrosilane to obtain a silanized polyphenylene ether resin.

[0006] Optionally, in step (1), the brominating agent is at least one of N-bromosuccinimide, N-bromo-o-sulfobenzimide, 1,3-dibromo-5,5-dimethylhydantoin, carbon tetrabromide, 1,3,5-tribromo-1,3,5-triazine-2,4,6-trione.

[0007] Optionally, the brominating agent in step (1) is N-bromosuccinimide.

[0008] Optionally, the allyl compound in step (2) is diallylamine.

[0009] Optionally, the mercapto silane is at least one of 3-mercaptopropyltrimethoxysilane, 3-mercaptopropyltriethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropylmethyldiethoxysilane.

[0010] Optionally, the mercapto silane is 3-mercaptopropyltrimethoxysilane.

[0011] Optionally, the hydrosilane is at least one of trimethoxysilane and triethoxysilane.

[0012] Another purpose of the present invention is that the silane-containing polyphenylene ether resin obtained by the above-mentioned preparation method is a silanized polyphenylene ether resin.

[0013] A third object of the present invention is to provide a high-temperature resistant and low-dielectric material and a preparation method thereof. After fully dissolving the silanized polyphenylene ether resin and tetrahydrofuran according to a mass ratio of 1:(3-6), the silanized polyphenylene ether resin and a catalyst are added according to a mass ratio of 1:(0.005-0.02) and mixed evenly. After curing at room temperature for 24 h, curing is carried out at 180 °C for 2 h to obtain the high-temperature resistant and low-dielectric material.

[0014] Optionally, the catalyst is at least one of dibutyltin dilaurate, dimethyltin dilaurate, dioctyltin dilaurate, dibutyltin oxide, dibutyltin dibutyrate, dimethyltin dibutyrate, dioctyltin dibutyrate, dibutyltin diacetate, dimethyltin diacetate, dioctyltin diacetate, butyltin maleate, methyltin maleate, and octyltin maleate.

[0015] The beneficial effects of the present invention are as follows:

[0016] The preparation method of the present invention can prepare a silanized polyphenylene ether resin with excellent properties. The preparation and curing methods are simple, the raw materials are easy to obtain, and wet curing can be realized. The cured material has high-temperature resistance, low-dielectric properties, good flame retardancy, and a low coefficient of thermal expansion. Description of the Drawings

[0017] Figure 1 It is the molecular structure of allyl polyphenylene ether resin SLPPO in Example 1.

[0018] Figure 2 It is the infrared spectrum of allyl polyphenylene ether resin SLPPO in Example 1.

[0019] Figure 3 It is the DMA diagram of the high-temperature resistant and low-dielectric material in Example 1.

[0020] Figure 4 It is the TG diagram of the high-temperature resistant and low-dielectric material in Example 1.

[0021] Figure 5 It is the relationship diagram of the dielectric constant, dielectric loss and frequency of the high-temperature resistant and low-dielectric material in Example 1.

[0022] Figure 6 It is the TMA diagram of the high-temperature resistant and low-dielectric material in Example 1. Detailed Embodiments

[0023] To make the above objects, features and advantages of the invention more obvious and understandable, the following detailed description of the specific embodiments of the invention is given.

[0024] In the following description, numerous specific details are set forth to provide a thorough understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art can make similar generalizations without departing from the spirit of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.

[0025] The preparation method of the allyl polyphenylene ether resin according to the present invention comprises the following steps: (1) reacting polyphenylene ether with a brominating agent to obtain brominated polyphenylene ether; (2) reacting the brominated polyphenylene ether with an allyl compound to obtain an allyl polyphenylene ether resin; (3) reacting the allyl polyphenylene ether resin with a mercapto silane or a hydrosilane to obtain a silylated polyphenylene ether resin.

[0026] In step (1), by the solvent method, polyphenylene ether and tetrahydrofuran are dissolved at a mass ratio of 1:(3 - 5). After complete dissolution, the polyphenylene ether, brominating agent, and dibenzoyl peroxide are added at a molar ratio of 1:(20 - 30):(0.2 - 0.5) for reaction. The reaction temperature is maintained at 70 - 80°C. The reaction is carried out under the protection of high-purity nitrogen for 2 h, then cooled to room temperature, washed with anhydrous methanol, and the precipitate is obtained by liquid separation. After vacuum drying, such washing and drying are carried out 3 - 4 times, and finally, solid brominated polyphenylene ether resin is obtained by vacuum drying.

[0027] In step (2), the brominated polyphenylene ether prepared according to step (1) and tetrahydrofuran are dissolved at a mass ratio of 1:(3 - 5). After complete dissolution, the brominated polyphenylene ether, allyl compound, and potassium carbonate are added at a molar ratio of 1:(10 - 20):(3 - 5) for reaction. The reaction temperature is maintained at 45 - 50°C. The reaction is carried out under the protection of high-purity nitrogen for 8 h, then cooled to room temperature, washed with anhydrous methanol, and the precipitate is obtained by liquid separation. After vacuum drying, such washing and drying are carried out 3 - 4 times, and finally, solid allyl polyphenylene ether resin (ALPPO) is obtained by vacuum drying.

[0028] In step (3), the allyl polyphenylene ether prepared according to step (2) and anhydrous tetrahydrofuran are dissolved at a mass ratio of 1:(3 - 6). After complete dissolution, the brominated polyphenylene ether, mercapto silane, and photoinitiator are added at a molar ratio of 1:(5 - 15):(0.01 - 0.03). Under the protection of nitrogen at room temperature, the reaction is carried out under ultraviolet light conditions for 1 - 1.5 h. After the reaction is completed, vacuum drying is carried out at 70 - 90°C for 2 - 5 h, and finally, solid silylated polyphenylene ether resin (SLPPO) is obtained.

[0029] In step (3), allyl polyphenylene ether prepared according to step (2) and anhydrous tetrahydrofuran are dissolved at a mass ratio of 1:(3-6). After complete dissolution, allyl polyphenylene ether and hydrosilane are reacted at a molar ratio of 1:(6-12) under nitrogen protection. The reaction temperature is maintained at 75-85 °C, and a catalyst accounting for 0.5% Wt of the total mass of the materials in the system is added. After reacting for 3-5 h, activated carbon accounting for 5% Wt of the total amount of the materials is added, stirred for 40 min, and then suction filtered to obtain the supernatant, which is vacuum dried at 70-90 °C for 2-5 h to obtain silanized polyphenylene ether resin (SLPPO).

[0030] In step (1), the brominating agent can be at least one of N-bromosuccinimide, N-bromo-o-sulfobenzimide, 1,3-dibromo-5,5-dimethylhydantoin, carbon tetrabromide, 1,3,5-tribromo-1,3,5-triazine-2,4,6-trione. The brominating agent is preferably N-bromosuccinimide.

[0031] In step (2), the allyl compound is diallylamine.

[0032] In step (3), the mercapto silane is at least one of 3-mercaptopropyltrimethoxysilane, 3-mercaptopropyltriethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropylmethyldiethoxysilane. The mercapto silane is preferably 3-mercaptopropyltrimethoxysilane.

[0033] In step (3), the photoinitiator is at least one of (2,4,6-trimethylbenzoyl) diphenylphosphine oxide, 2-hydroxy-2-methyl-1-phenyl-1-propanone, 1-hydroxycyclohexyl phenyl ketone. The photoinitiator is preferably (2,4,6-trimethylbenzoyl) diphenylphosphine oxide.

[0034] In step (3), the hydrosilane is at least one of trimethoxysilane and triethoxysilane.

[0035] In step (3), the catalyst is at least one of platinum, chloroplatinic acid, platinum carbon, platinum dioxide.

[0036] The allyl polyphenylene ether resin with a high allyl content prepared according to the above preparation method can be applied to the field of low dielectric materials.

[0037] The preparation method of the high-temperature resistant and low dielectric material according to the present invention includes the following steps: after the silanized polyphenylene ether resin prepared by the above preparation method and anhydrous tetrahydrofuran are completely dissolved at a mass ratio of 1:(3-6), the silanized polyphenylene ether resin and the catalyst are added at a mass ratio of 1:(0.005-0.02) and mixed evenly. After curing at room temperature for 24 h, it is cured at 180 °C for 2 h to obtain the high-temperature resistant and low dielectric material.

[0038] The catalyst is at least one of dibutyltin dilaurate, dimethyltin dilaurate, dioctyltin dilaurate, dibutyltin oxide, dibutyltin dibutyrate, dimethyltin dibutyrate, dioctyltin dibutyrate, dibutyltin diacetate, dimethyltin diacetate, dioctyltin diacetate, butyltin maleate, methyltin maleate, and octyltin maleate. The catalyst is preferably dibutyltin dilaurate.

[0039] The high-temperature resistant and low-dielectric encapsulating material prepared according to the above preparation method has excellent comprehensive properties.

[0040] The following is a specific description of the silanized polyphenylene ether resin of the present invention, its preparation method, the high-temperature resistant and low-dielectric encapsulating material, and its preparation method through examples. The main raw materials and equipment used: Unless otherwise specified, the raw materials and equipment in each example and comparative example are the same; the materials without specifying the specific model or type are of the same common model purchased from the market, and no specific restrictions are made.

[0041] Example 1

[0042] (1) In a 500 ml three-necked flask, 10 g of polyphenylene ether and 50 g of tetrahydrofuran were fully dissolved, and then 10 g of polyphenylene ether, 26 g of N-bromosuccinimide, and 0.5 g of dibenzoyl peroxide were added for reaction. The reaction temperature was maintained at 70-80 °C. After reacting for 2 h under the protection of high-purity nitrogen, it was cooled to room temperature and then washed with anhydrous methanol. The precipitate was obtained by liquid separation and vacuum dried. It was washed 3-4 times in this way, and finally vacuum dried to obtain a solid brominated polyphenylene ether resin.

[0043] (2) In a 500 ml three-necked flask, 10 g of brominated polyphenylene ether and 50 g of tetrahydrofuran were fully dissolved, and then 10 g of brominated polyphenylene ether, 7 g of diallylamine, and 2.4 g of potassium carbonate were added for reaction. The reaction temperature was maintained at 45-50 °C. After reacting for 8 h under the protection of high-purity nitrogen, it was cooled to room temperature and then washed with anhydrous methanol. The precipitate was obtained by liquid separation and vacuum dried. It was washed 3-4 times in this way, and finally vacuum dried to obtain a solid allyl polyphenylene ether resin (ALPPO).

[0044] (3) 2.6 g of allyl polyphenylene ether resin was added to a 50 ml three-necked flask, and then 10 g of anhydrous tetrahydrofuran was added for full dissolution. Then 2.6 g of allyl polyphenylene ether, 3.2 g of 3-mercaptopropyltrimethoxysilane, and 0.02 g of (2,4,6-trimethylbenzoyl) diphenylphosphine oxide were added for reaction. The reaction was carried out for 1 h under room temperature ultraviolet light conditions and under the protection of high-purity nitrogen. After the reaction, it was vacuum dried to obtain a silanized polyphenylene ether resin (SLPPO). The molecular structure of the reaction product is shown in Figure 1 , where m≥0, n≥0, x≥0, y≥0, and the infrared spectrum of the product is shown in Figure 2 .

[0045] (4) Add 2.2 g of silylated polyphenylene ether into a 100 ml beaker, add 8 g of tetrahydrofuran and dissolve it completely. Then add 0.04 g of dibutyltin dilaurate, mix well, cure at room temperature for 24 h, and then cure at 180 °C for 2 h to obtain the high-temperature resistant and low-dielectric material.

[0046] For the material obtained by the above method, test a 40*50*1 mm 3 spline by a dynamic thermomechanical analyzer (DMA), and the glass transition temperature is 245 °C. The results are as Figure 3 shown; the decomposition temperature at 5% weight loss measured by TG is 338 °C. The results are as Figure 4 shown; use an Agilent 4294A instrument to test the dielectric properties of a 10*10*1 mm 3 spline. The dielectric constant of the material at 1 MHz is 2.77. The results are as Figure 5 shown, having high temperature resistance and low dielectric properties.

[0047] Among them, Figure 1 is the molecular structure of the silylated polyphenylene ether resin.

[0048] Figure 2 Near 3070 cm -1 is the characteristic peak of C-H stretching vibration of allyl unsaturated bond. Near 2940 cm -1 is the characteristic peak of methyl group. At 2850 cm -1 is the characteristic peak of methylene group. Near 1640 cm -1 is the characteristic peak of C=C. Near 1090 cm -1 is the characteristic peak of Si-O. Near 820 cm -1 is the characteristic peak of Si-C stretching vibration.

[0049] Figure 6 is the TMA test result of this material, and its linear expansion coefficient is 83.5 ppm / °C.

[0050] It can be seen from the above test results that the high-temperature resistant and low-dielectric material prepared in Example 1 has excellent comprehensive performance.

[0051] Example 2

[0052] Except that in step (3), 1.23 g of allyl polyphenylene ether is added, and then 5.2 g of anhydrous tetrahydrofuran is added. Then 1.23 g of allyl polyphenylene ether, 1.03 g of 3-mercaptopropyltrimethoxysilane, and 0.024 g of (2,4,6-trimethylbenzoyl) diphenylphosphine oxide are added for reaction. Except that in step (4), 1.2 g of silylated polyphenylene ether, 5.5 g of tetrahydrofuran, and 0.016 g of dibutyltin dilaurate are added, the others are the same as in Example 1.

[0053] For the material obtained by the above method, through dielectric property testing, the dielectric constant of the material at 25 °C and 1 MHz is 2.83, the glass transition temperature is 238 °C, and the initial decomposition temperature with a weight loss of 5% is 334 °C, showing good heat resistance and low dielectric properties.

[0054] Example 3

[0055] Except that in step (3), 1.29 g of allyl polyphenylene ether is added, and then 6.2 g of anhydrous tetrahydrofuran is added. Then 1.29 g of allyl polyphenylene ether, 0.82 g of 3-mercaptopropyltrimethoxysilane, and 0.026 g of (2,4,6-trimethylbenzoyl) diphenylphosphine oxide are added for reaction. Except that in step (4), 1.2 g of silylated polyphenylene ether, 5.8 g of tetrahydrofuran, and 0.015 g of dibutyltin dilaurate are added, the others are the same as in Example 1.

[0056] For the material obtained by the above method, through dielectric property testing, the dielectric constant of the material at 25 °C and 1 MHz is 2.89, the glass transition temperature is 232 °C, and the initial decomposition temperature with a weight loss of 5% is 332 °C, showing good flexibility and low dielectric properties.

[0057] Example 4

[0058] (1) Weigh 5.02 g of allyl polyphenylene ether obtained from steps (1) and (2) of Example 1 in a 50 ml four-necked flask. After adding 20.11 g of anhydrous tetrahydrofuran and fully dissolving, then add 3.06 g of trimethoxysilane and 0.04 g of platinum. Under nitrogen protection, react at 80 °C for 4 h. Then add 0.403 g of activated carbon, stir for 40 min, filter to obtain the supernatant, and vacuum dry at 80 °C to obtain silylated polyphenylene ether resin (SLPPO).

[0059] (2) Add 4.1 g of silylated polyphenylene ether to a 50 ml beaker, and add 18.9 g of tetrahydrofuran to fully dissolve. Then add 0.02 g of dibutyltin dilaurate and mix well. After curing at room temperature for 24 h, cure at 180 °C for 2 h to obtain the high-temperature resistant and low-dielectric material.

[0060] The material obtained by the above method was tested for dielectric properties, and the dielectric constant of the material at 25°C and 1 MHz was 2.76, the glass transition temperature was 237°C, and the initial decomposition temperature with a weight loss of 5% was 330°C, showing good flexibility and low dielectric properties.

Claims

1. A preparation method of a silylated polyphenylene ether resin, characterized in that, It includes the following steps: (1) React polyphenylene ether with a brominating agent to obtain brominated polyphenylene ether; (2) React the brominated polyphenylene ether with diallylamine to obtain allyl polyphenylene ether resin; (3) React the allyl polyphenylene ether resin with a mercapto-silane or a hydrosilane to obtain a silylated polyphenylene ether resin.

2. The preparation method of the silylated polyphenylene ether resin according to claim 1, wherein In step (1), the brominating agent is at least one of N-bromosuccinimide, N-bromo-o-sulfobenzimide, 1,3-dibromo-5,5-dimethylhydantoin, carbon tetrabromide, 1,3,5-tribromo-1,3,5-triazine-2,4,6-trione.

3. The preparation method of the silylated polyphenylene ether resin according to claim 2, characterized in that, In step (2), the brominating agent in step (1) is N-bromosuccinimide.

4. The preparation method of the silylated allyl polyphenylene ether resin according to claim 1, characterized in that, The mercapto-silane is at least one of 3-mercaptopropyltrimethoxysilane, 3-mercaptopropyltriethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropylmethyldiethoxysilane.

5. The preparation method of the silylated allyl polyphenylene ether resin according to claim 4, characterized in that, The mercapto-silane is 3-mercaptopropyltrimethoxysilane.

6. The preparation method of the silylated allyl polyphenylene ether resin according to claim 1, characterized in that, The hydrosilane is at least one of trimethoxysilane and triethoxysilane.

7. A silylated polyphenylene ether resin obtained by the preparation method according to any one of claims 1 to 6.

8. A preparation method of a high-temperature resistant and low-dielectric material, characterized in that After the silylated polyphenylene ether resin in claim 7 and tetrahydrofuran are fully dissolved at a mass ratio of 1:(3 - 6), a catalyst is added and mixed evenly. The mass ratio of the silylated polyphenylene ether resin to the catalyst is 1:(0.005 - 0.02). After curing at room temperature for 24 h and then curing at 180 °C for 2 h, the high-temperature resistant and low-dielectric material is obtained; the catalyst is at least one of dibutyltin dilaurate, dimethyltin dilaurate, dioctyltin dilaurate, dibutyltin oxide, dibutyltin dibutyrate, dimethyltin dibutyrate, dioctyltin dibutyrate, dibutyltin diacetate, dimethyltin diacetate, dioctyltin diacetate, butyltin maleate, methyltin maleate, octyltin maleate.

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