Optimization method and system for semiconductor equipment control system

Abstract

The present invention relates to the technical field of data optimization and processing, and provides an optimization method and system for a semiconductor device control system, including obtaining electrode spacing parameters and device current parameters, analyzing the electrode spacing parameters and device current parameters, and obtaining current control instructions; obtaining cathode and anode clamping force parameters, dynamically adjusting the cathode and anode clamping force parameters using current control instructions, and obtaining cathode and anode clamping force distributions; dynamically optimizing the fluid in an electroplating tank using cathode and anode clamping force distributions and current control instructions, and obtaining liquid level adjustment result parameters; and adjusting the stirring speed and direction of the semiconductor device electroplating solution based on the liquid level adjustment result parameters. By obtaining electrode spacing parameters and device current parameters, and performing dynamic analysis and correlation analysis on these parameters, the accuracy and efficiency of the electroplating process are improved, and the problems of insufficient adjustment, slow response, and insufficient control accuracy when facing complex working condition changes are improved.

Description

Technical Field

[0001] The present application relates to the technical field of data optimization processing, and in particular to an optimization method and system for a semiconductor equipment control system. Background Art

[0002] With the rapid development of modern science and technology, semiconductor equipment plays a vital role in the manufacturing process of electronic products. Semiconductor devices are widely used in computer, communication, medical and other fields, and their performance directly affects the quality and market competitiveness of terminal products. Therefore, improving the control accuracy and stability of semiconductor equipment has become an important issue in the industry.

[0003] Among the related technical means, the existing semiconductor equipment control technology mainly relies on fixed parameter settings and manual adjustments. For example, by setting a fixed electrode spacing and equipment current parameters to maintain the uniformity of the electric field, the traditional current density distribution control method is used to optimize the current density uniformity during the electroplating process. This method achieves a relatively stable electric field distribution and current density control effect, which can meet general application requirements.

[0004] Regarding the above technical solution, although basic electric field uniformity and current density control can be achieved through fixed parameter settings and manual adjustment methods, there are problems such as insufficient adjustment speed, slow response, and insufficient control accuracy when facing complex changes in working conditions. Summary of the invention

[0005] In order to improve the problems of insufficient adjustment, slow response and insufficient control accuracy when facing complex working conditions, the present application provides an optimization method and system for a semiconductor equipment control system, aiming to improve control accuracy and system response speed, and ensure stable operation of the equipment under various working conditions.

[0006] The present invention provides an optimization method for a semiconductor device control system, comprising: obtaining electrode spacing parameters and device current parameters, performing dynamic analysis and correlation analysis on the electrode spacing parameters and the device current parameters to obtain an electric field uniformity optimization factor and a current density correction factor; optimizing the electric field uniformity in the semiconductor device using the electric field uniformity optimization factor to obtain an electric field distribution; performing uniformity correction on the current density in the electroplating process based on the electric field distribution and the current density correction factor to generate a current control instruction; obtaining anode and cathode clamping force parameters, dynamically adjusting the anode and cathode clamping force parameters using the current control instruction to obtain anode and cathode clamping force distribution; dynamically optimizing the fluid in an electroplating tank using the anode and cathode clamping force distribution and the current control instruction to obtain a liquid level adjustment result parameter; and inputting the liquid level adjustment result parameter into the control system of the semiconductor device to control the stirring speed and direction of the electroplating solution.

[0007] As a preferred solution, the steps of obtaining electrode spacing parameters and device current parameters, dynamically analyzing and correlating the electrode spacing parameters and the device current parameters, and obtaining an electric field uniformity optimization factor and a current density correction factor include: using a position sensor to measure the electrode spacing between the anode and the cathode to obtain the electrode spacing parameters, and driving an electrode adjustment device to adjust the relative position of the electrodes based on the electrode spacing parameters; applying a differential method to calculate the electrode spacing parameters to obtain an electrode spacing change rate; continuously monitoring the fluctuation amplitude, instantaneous current and average current of the semiconductor device current through a current sensor to obtain device current parameters; applying Fourier transform to transform the device current parameters to obtain a current stability coefficient; correlating the electrode spacing change rate with the current stability coefficient to generate an electric field distribution influencing factor and a current dynamic response factor; optimizing the electrode spacing distribution using the electric field distribution influencing factor to obtain an electric field uniformity optimization factor, and adjusting the device output current using the current dynamic response factor to obtain a current density correction factor.

[0008] As a preferred solution, the step of optimizing the electric field uniformity in the semiconductor device by using the electric field uniformity optimization factor to obtain the electric field distribution includes: obtaining the electrode relative position parameter in the electric field uniformity optimization factor, measuring the electric field strength and distribution by an electric field sensor, and obtaining the initial electric field distribution data; calculating the electric field deviation value based on the electrode relative position parameter and the initial electric field distribution data, applying the integration method to cumulatively analyze the electric field deviation value, and generating an electric field uniformity deviation trend; according to the electric field uniformity deviation trend, driving the electrode adjustment device again to adjust the electrode relative position, and detecting the adjusted electric field strength; monitoring the adjusted electric field strength by a feedback circuit, obtaining the corrected electric field distribution data, and fusing the corrected electric field distribution data with the electric field uniformity optimization factor to obtain the optimized electric field distribution.

[0009] As a preferred scheme, the step of performing uniformity correction on the current density in the electroplating process based on the electric field distribution and the current density correction factor to generate a current control instruction includes: obtaining an electric field strength uniformity parameter in the electric field distribution, and obtaining a dynamic current distribution parameter in the current density correction factor; cross-analyzing the electric field strength uniformity parameter and the dynamic current distribution parameter by a Pearson correlation coefficient calculation method to generate a current correction matrix; solving the current correction matrix by a singular value decomposition method to obtain a current strength adjustment factor and a current direction optimization factor; optimizing the instantaneous amplitude of the device output current by using the current strength adjustment factor to obtain a current strength distribution, and correcting the distribution direction of the device current path by using the current direction optimization factor to obtain a current direction distribution; and generating a current control instruction based on the current strength distribution and the current direction distribution.

[0010] As a preferred scheme, the steps of obtaining the electric field strength uniformity parameter in the electric field distribution and obtaining the dynamic current distribution parameter in the current density correction factor include: gridding the electric field distribution by grid division to obtain a plurality of independent grid units; applying the regional weighted method to calculate the average value of the electric field strength in each of the independent grid units to obtain grid electric field distribution data; calculating the maximum deviation value of the electric field strength between grids based on the grid electric field distribution data, and calculating the electric field strength uniformity parameter based on the maximum deviation value and the average value of the electric field strength by using the weighted difference method; performing segmented processing on the instantaneous current and the average current of the equipment according to the current density correction factor to obtain current frequency distribution data, and performing frequency domain analysis on the current frequency distribution data by short-time Fourier transform method to obtain dynamic current distribution parameters.

[0011] As a preferred scheme, the steps of obtaining the anode and cathode clamping force parameters, dynamically adjusting the anode and cathode clamping force parameters using the current control instruction, and obtaining the anode and cathode clamping force distribution include: obtaining the anode and cathode clamping force parameters of the anode and cathode clamping device, measuring the contact pressure of the anode and cathode in real time through a pressure sensor, and obtaining a contact pressure deviation value, wherein the anode and cathode clamping force parameters include an initial clamping force parameter and a pressure distribution; combining the contact pressure deviation value with the current control instruction to generate a pressure control factor, and adjusting the anode and cathode clamping device based on the pressure control factor to generate a preliminary pressure adjustment result; cross-analyzing the preliminary pressure adjustment result with the initial clamping force parameter to generate clamping force distribution data, and correcting the clamping force distribution data to obtain the anode and cathode clamping force distribution.

[0012] As a preferred scheme, the step of using the anode and cathode clamping force distribution and the current control instruction to perform fluid dynamic optimization on the electroplating tank to obtain the liquid level adjustment result parameters includes: obtaining the pressure distribution parameters in the anode and cathode clamping force distribution, and obtaining the dynamic current parameters in the current control instruction; inputting the pressure distribution parameters and the dynamic current parameters into a preset stability model to obtain a liquid flow stability factor, and using the liquid flow stability factor to adjust the injection rate and discharge rate of the electroplating tank to obtain the liquid level adjustment result parameters.

[0013] The present application also provides an optimization system for a semiconductor device control system, comprising: an acquisition unit, used to acquire electrode spacing parameters and device current parameters, and perform dynamic analysis and correlation analysis on the electrode spacing parameters and the device current parameters to obtain an electric field uniformity optimization factor and a current density correction factor; a first optimization unit, used to optimize the electric field uniformity in the semiconductor device using the electric field uniformity optimization factor to obtain an electric field distribution; a generation unit, used to perform uniformity correction on the current density in the electroplating process based on the electric field distribution and the current density correction factor, and generate a current control instruction; an adjustment unit, used to acquire anode and cathode clamping force parameters, and dynamically adjust the anode and cathode clamping force parameters using the current control instruction to obtain the anode and cathode clamping force distribution; a second optimization unit, used to perform fluid dynamic optimization on the electroplating tank using the anode and cathode clamping force distribution and the current control instruction to obtain a liquid level adjustment result parameter; a control unit, used to input the liquid level adjustment result parameter into the control system of the semiconductor device to control the stirring speed and direction of the electroplating solution.

[0014] Compared with the prior art, the present application has the following beneficial effects: rapid response and high control accuracy. Obtain electrode spacing parameters and equipment current parameters, and perform dynamic analysis and correlation analysis on these parameters to obtain electric field uniformity optimization factors and current density correction factors, and use these factors to optimize and correct the electric field and current density in the semiconductor device, generate accurate current control instructions, and obtain the distribution of the anode and cathode clamping force by measuring and dynamically adjusting the anode and cathode clamping force parameters, and use them to perform fluid dynamic optimization, and finally obtain the liquid level adjustment result parameters. Based on the results, adjust the stirring speed and direction of the electroplating solution, and achieve the improvement of the uniformity of the electric field and current density of the semiconductor device, improve the accuracy and efficiency of the electroplating process, ensure the stable operation of the equipment under complex working conditions, and improve the problems of insufficient adjustment, slow response, and insufficient control accuracy when facing complex working condition changes. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0016] The structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification so as to facilitate understanding and reading by persons familiar with this technology. They are not used to limit the conditions under which the present invention can be implemented, and therefore have no substantive technical significance. Any structural modification, change in proportion or adjustment of size, without affecting the effects and purposes that can be achieved by the present invention, should still fall within the scope of the technical contents disclosed by the present invention.

[0017] Figure 1 It is a flow chart of a method for optimizing a semiconductor device control system provided by an embodiment of the present invention;

[0018] Figure 2 It is a schematic block diagram of the structure of an optimization system for a semiconductor device control system provided by an embodiment of the present invention.

[0019] Description of reference numerals:

[0020] 10. Optimization system for semiconductor equipment control system; 11. Acquisition unit; 12. First optimization unit; 13. Generation unit; 14. Adjustment unit; 15. Second optimization unit; 16. Control unit. DETAILED DESCRIPTION

[0021] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] The flowcharts shown in the accompanying drawings are only examples and do not necessarily include all the contents and operations / steps, nor must they be executed in the order described. For example, some operations / steps may also be decomposed, combined or partially merged, so the actual execution order may change according to actual conditions.

[0023] It should also be understood that the terms used in this application specification are only for the purpose of describing specific embodiments and are not intended to limit the application. As used in this application specification and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0024] It should be further understood that the term “and / or” used in the specification and appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0025] The technical solution of the present invention is further described below with reference to the accompanying drawings and through specific implementation methods.

[0026] Embodiment 1:

[0027] like Figure 1 As shown, the present application provides a method for optimizing a semiconductor device control system, including steps S100 to S600.

[0028] Step S100, obtaining electrode spacing parameters and device current parameters, performing dynamic analysis and correlation analysis on the electrode spacing parameters and device current parameters, and obtaining an electric field uniformity optimization factor and a current density correction factor.

[0029] In this step, the real-time electrode spacing parameters and device current parameters are obtained through sensors, and these parameters are continuously monitored using a dynamic analysis algorithm, and the electric field uniformity optimization factor and current density correction factor are calculated through correlation analysis. Specifically, the electrode spacing parameter is used to determine the distribution of the electric field, and the device current parameter is used to calculate the current density distribution.

[0030] For example, in practical applications, high-precision sensors can be used to measure the electrode spacing parameters and upload them to the control system in real time through a data acquisition system.

[0031] Step S200: optimizing the electric field uniformity in the semiconductor device using the electric field uniformity optimization factor to obtain the electric field distribution.

[0032] In this step, the electric field in the semiconductor device is adjusted by the electric field uniformity optimization factor to ensure uniform distribution of the electric field. Specifically, the electrode spacing can be adjusted according to the optimization factor to obtain the best electric field uniformity.

[0033] For example, in the semiconductor manufacturing process, the position and distance of electrodes are adjusted to achieve the best electric field distribution, thereby improving product quality.

[0034] Step S300: Based on the electric field distribution and the current density correction factor, the current density in the electroplating process is corrected for uniformity, and a current control instruction is generated.

[0035] In this step, the current density in the electroplating process is accurately corrected by the calculated electric field distribution and current density correction factor. Specifically, the current input is adjusted according to the correction factor to ensure the uniformity of the current density.

[0036] For example, in the electroplating process, the current input parameters are automatically adjusted based on the real-time measured current density data to achieve the best electroplating effect.

[0037] Step S400, obtaining the anode and cathode clamping force parameters, dynamically adjusting the anode and cathode clamping force parameters using the current control instruction, and obtaining the anode and cathode clamping force distribution.

[0038] In this step, the clamping force parameters of the cathode and anode are measured by sensors, and these parameters are dynamically adjusted using the previously generated current control instructions. Specifically, the clamping force between the cathode and anode is adjusted according to the current control instructions to optimize its distribution.

[0039] For example, the pressure of the clamping device can be adjusted in real time through an automated control system to ensure uniform distribution of the anode and cathode clamping force.

[0040] Step S500, using the anode and cathode clamping force distribution and current control instructions to perform fluid dynamic optimization on the electroplating tank, and obtain liquid level adjustment result parameters.

[0041] In this step, the fluid in the electroplating tank is optimized and regulated according to the anode and cathode clamping force distribution and the current control instructions. Specifically, the height of the liquid level is adjusted according to these parameters to ensure uniform distribution of the liquid in the electroplating tank.

[0042] For example, the liquid level in a plating tank is adjusted by an automated system to ensure uniform flow and stability of the solution.

[0043] Step S600: input the liquid level adjustment result parameters into the control system of the semiconductor device to control the stirring speed and direction of the electroplating solution.

[0044] In this step, the stirring speed and direction of the electroplating solution are optimized according to the resultant parameters of the liquid level adjustment. Specifically, the stirring device is adjusted by the control system to ensure uniform mixing of the solution.

[0045] For example, the speed and direction of the agitator can be automatically adjusted according to the real-time measured liquid level data to ensure the stability of the solution and the electroplating effect.

[0046] In this embodiment, by obtaining the electrode spacing parameters and the device current parameters, the electric field uniformity optimization factor and the current density correction factor are obtained through dynamic analysis and correlation analysis. The electric field uniformity optimization factor is used to optimize the electric field uniformity in the semiconductor device, and based on the electric field distribution and the current density correction factor, the current density in the electroplating process is corrected for uniformity, thereby generating a current control instruction. Subsequently, the cathode and cathode clamping force parameters are obtained, and the cathode and cathode clamping force parameters are dynamically adjusted using the current control instruction to obtain the cathode and cathode clamping force distribution. Finally, the electroplating tank is dynamically optimized by the cathode and cathode clamping force distribution and the current control instruction to obtain the liquid level adjustment result parameters, and based on the liquid level adjustment result parameters, the stirring speed and direction of the semiconductor device electroplating solution are adjusted. Through dynamic analysis and correlation analysis, the uniformity of the electric field and current density of semiconductor equipment can be effectively improved, the accuracy and efficiency of the electroplating process can be significantly improved, and the anode and cathode clamping force parameters can be dynamically adjusted and the fluid flow can be optimized. This helps to improve the stability of the liquid level in the plating tank and the uniformity of the electroplating solution, ensuring the stable operation of the equipment under complex working conditions, thereby improving product quality and production efficiency, and improving the problems of insufficient adjustment, slow response, and insufficient control accuracy when facing complex changes in working conditions.

[0047] Embodiment 2:

[0048] In step S100, the electrode spacing between the anode and the cathode is measured by using a position sensor to obtain an electrode spacing parameter, and the electrode adjustment device is driven to adjust the relative position of the electrodes based on the electrode spacing parameter.

[0049] The electrode spacing between the anode and the cathode is continuously measured by a position sensor, and the measurement results are uploaded to the control system in real time; specifically, high-precision position sensors can be installed on the anode and the cathode respectively to record the initial data of the electrode spacing.

[0050] For example, when the production line is initially started, the distance between the anode and the cathode is accurately measured by a position sensor, and the measured distance data is used to drive the electrode adjustment device to adjust the relative position of the electrodes.

[0051] The difference method is used to calculate the electrode spacing parameters and obtain the electrode spacing change rate.

[0052] The rate of change of the electrode spacing is calculated by applying the differential method to the continuously measured data, so as to analyze the change of the electrode spacing at different time points; specifically, the spacing change rate is obtained by performing differential processing on the spacing data at multiple consecutive time points.

[0053] For example, during the production process, the continuously measured electrode spacing data is analyzed by the differential method to detect slight changes in the electrode position in a timely manner.

[0054] The current sensor is used to continuously monitor the fluctuation amplitude, instantaneous current and average current of the semiconductor device current to obtain the device current parameters.

[0055] By installing current sensors in semiconductor devices, the current fluctuation amplitude, instantaneous current and average current can be monitored in real time to obtain detailed device current parameters; specifically, the current sensors can be installed in key parts of the device to continuously record the current parameters.

[0056] For example, in the electroplating process, high-precision current sensors are used to monitor the equipment current to ensure the accuracy of the current parameters.

[0057] The device current parameters are transformed by Fourier transform to obtain the current stability coefficient.

[0058] By applying Fourier transform to the acquired device current parameters, the frequency domain characteristics of the current are analyzed and the current stability coefficient is calculated; specifically, the device current parameters are converted from the time domain to the frequency domain through Fourier transform, and the stability coefficient is calculated based on the frequency domain characteristics.

[0059] For example, when analyzing current fluctuations, the current data is transformed into the frequency domain using Fourier transform to obtain the current stability analysis results.

[0060] The electrode spacing change rate and current stability coefficient are correlated and analyzed to generate the electric field distribution influencing factor and current dynamic response factor.

[0061] By performing correlation analysis on the electrode spacing change rate and the current stability coefficient, the relationship between the two is evaluated, and the electric field distribution influencing factor and the current dynamic response factor are generated; specifically, the influence of the electrode spacing change on the electric field distribution and the current dynamic response is analyzed through the correlation analysis method.

[0062] For example, the correlation analysis method is used to study the relationship between the change in electrode spacing and current stability, and generate optimized control factors.

[0063] The electric field distribution influencing factor is used to optimize the electrode spacing distribution to obtain the electric field uniformity optimization factor, and the current dynamic response factor is used to adjust the equipment output current to obtain the current density correction factor.

[0064] Through the electric field distribution influencing factor, the electrode spacing distribution is optimized to ensure the uniformity of the electric field and obtain the electric field uniformity optimization factor. At the same time, the output current of the equipment is adjusted using the current dynamic response factor to ensure the uniformity of the current density and obtain the current density correction factor. Specifically, the electrode spacing is adjusted according to the electric field distribution influencing factor, and the output current is adjusted according to the current dynamic response factor.

[0065] For example, during the electroplating process, the position of the electrodes and the current parameters are adjusted according to the optimization factors to ensure the uniformity of the electric field and current.

[0066] In step S200, the relative position parameters of the electrodes in the electric field uniformity optimization factor are obtained, and the electric field strength and distribution are measured by an electric field sensor to obtain initial electric field distribution data.

[0067] By obtaining the electrode relative position parameters in the electric field uniformity optimization factor, the electric field strength and distribution are measured using electric field sensors to obtain initial electric field distribution data; specifically, electric field sensors can be installed at key locations of the equipment to monitor the electric field strength in real time.

[0068] For example, before electroplating begins, the electric field strength inside the equipment is measured by an electric field sensor and the initial electric field data is recorded.

[0069] The electric field deviation value is calculated based on the electrode relative position parameters and the initial electric field distribution data. The electric field deviation value is cumulatively analyzed using the integration method to generate the electric field uniformity deviation trend.

[0070] The electric field deviation value is obtained by calculating the difference between the electrode relative position parameters and the initial electric field distribution data, and the electric field deviation value is cumulatively analyzed by the integration method to generate the electric field uniformity deviation trend; specifically, the change trend of the electric field uniformity is obtained by calculating the electric field deviation value at continuous time points.

[0071] For example, during the electroplating process, the electric field strength is continuously monitored and its deviation trend is analyzed to ensure the stability of the electric field.

[0072] According to the deviation trend of the electric field uniformity, the electrode adjustment device is driven again to adjust the relative position of the electrodes, and the adjusted electric field strength is detected.

[0073] By means of the deviation trend of the electric field uniformity, the electrode adjustment device is driven in real time to dynamically adjust the relative position of the electrodes to ensure the uniformity of the electric field strength; specifically, the position of the electrodes is adjusted in real time through the motor control system, and the adjusted electric field strength is detected by the sensor.

[0074] For example, during the production process, the electrode position is adjusted in real time through an automated system to ensure that the electric field strength is evenly distributed.

[0075] The adjusted electric field intensity is monitored through a feedback circuit to obtain corrected electric field distribution data, which is then merged with an electric field uniformity optimization factor to obtain an optimized electric field distribution.

[0076] The adjusted electric field strength is continuously monitored through the feedback circuit to obtain the corrected electric field distribution data, which is then integrated with the electric field uniformity optimization factor to obtain the final optimized electric field distribution. Specifically, the electric field distribution is monitored and corrected in real time through the feedback control system to ensure the uniformity of the electric field.

[0077] For example, during the electroplating process, the electric field distribution is monitored and adjusted in real time through the feedback system to ensure the stability and consistency of the production process.

[0078] In step S300, the electric field strength uniformity parameter in the electric field distribution is obtained, and the dynamic current distribution parameter in the current density correction factor is obtained.

[0079] By acquiring the electric field strength uniformity parameters in the electric field distribution and the dynamic current distribution parameters in the current density correction factor, the electric field and current can be precisely controlled; specifically, the key parameters of the electric field and current can be acquired through a real-time monitoring system.

[0080] For example, during the electroplating process, sensors are used to obtain real-time data on the electric field and current to ensure the accuracy of the parameters.

[0081] The electric field intensity uniformity parameters and dynamic current distribution parameters are cross-analyzed by Pearson correlation coefficient calculation method to generate a current correction matrix.

[0082] By applying the Pearson correlation coefficient calculation method, the electric field strength uniformity parameters and the dynamic current distribution parameters are cross-analyzed to generate a current correction matrix to optimize the current distribution; specifically, through correlation analysis, the relationship between the electric field and the current is evaluated to generate a correction matrix.

[0083] For example, in data analysis, the Pearson correlation coefficient method is used to analyze the relationship between electric field and current parameters and generate an optimized control matrix.

[0084] The singular value decomposition method is used to solve the current correction matrix to obtain the current intensity adjustment factor and the current direction optimization factor.

[0085] By applying the singular value decomposition method, the generated current correction matrix is ​​solved to obtain the current intensity adjustment factor and the current direction optimization factor, thereby achieving precise control of the current; specifically, the intensity and direction of the current are optimized through a mathematical solution method.

[0086] For example, in the electroplating process, the singular value decomposition method is used to optimize the current intensity and direction to improve production quality.

[0087] The instantaneous amplitude of the output current of the device is optimized using the current intensity adjustment factor to obtain the current intensity distribution, and the distribution direction of the device current path is corrected using the current direction optimization factor to obtain the current direction distribution.

[0088] The instantaneous amplitude of the device output current is optimized by the current intensity adjustment factor to ensure uniform distribution of the current intensity. The distribution direction of the device current path is corrected by the current direction optimization factor to obtain an optimized current direction distribution. Specifically, the current distribution is optimized by adjusting the current intensity and direction in real time.

[0089] For example, during the electroplating process, the current intensity and path direction are adjusted to ensure the stability and uniformity of the current.

[0090] A current control command is generated based on the current intensity distribution and the current direction distribution.

[0091] By combining the current intensity distribution and the current direction distribution, current control instructions are generated to achieve precise control of the current; specifically, according to the optimized current distribution, corresponding control instructions are generated to guide the operation of the equipment.

[0092] For example, during the production process, current control instructions are generated to ensure that the intensity and direction of the current are maintained at the optimal state, thereby improving production efficiency and product quality.

[0093] The steps of obtaining the electric field strength uniformity parameter in the electric field distribution and the dynamic current distribution parameter in the current density correction factor include: gridding the electric field distribution by grid division to obtain a plurality of independent grid units.

[0094] By gridding the electric field distribution, multiple independent grid units are generated to ensure accurate analysis of the electric field strength in each unit; specifically, the electric field distribution area is divided into several independent small grid units through computer simulation technology.

[0095] For example, in the electroplating process, the electric field distribution area is refined into multiple independent units through the meshing method, so as to facilitate the detailed analysis of the electric field characteristics of each unit.

[0096] The area weighted method is used to calculate the average value of the electric field intensity in each independent grid unit to obtain the grid electric field distribution data.

[0097] By applying the regional weighting method, the electric field strength data in each independent grid unit is weighted and calculated to obtain accurate grid electric field distribution data; specifically, by weighting the electric field strength data in each grid unit, accurate grid electric field distribution data is generated.

[0098] For example, when analyzing the electric field distribution, the regional weighted method is used to perform detailed calculations on the electric field data of each grid unit to ensure the accuracy of the data.

[0099] The maximum deviation value of the electric field strength between grids is calculated based on the grid electric field distribution data, and the electric field strength uniformity parameter is calculated based on the maximum deviation value and the average value of the electric field strength using the weighted difference method.

[0100] By analyzing the grid electric field distribution data, the maximum deviation value of the electric field strength between grids is calculated, and the electric field strength uniformity parameter is calculated based on the maximum deviation value and the average value of the electric field strength using the weighted difference method; specifically, the uniformity parameter of the electric field strength is calculated by performing a detailed analysis of the grid data.

[0101] For example, during the electroplating process, the maximum deviation value of the electric field strength is calculated through grid data analysis, and the weighted difference method is applied to determine the electric field uniformity parameters.

[0102] The instantaneous current and average current of the equipment are processed in sections according to the current density correction factor to obtain the current frequency distribution data. The current frequency distribution data is analyzed in the frequency domain by the short-time Fourier transform method to obtain the dynamic current distribution parameters.

[0103] By segmenting the instantaneous current and average current of the equipment according to the current density correction factor, detailed current frequency distribution data are obtained, and these data are analyzed in the frequency domain through the short-time Fourier transform method to obtain dynamic current distribution parameters; specifically, accurate current frequency distribution is obtained by carefully analyzing the instantaneous current and average current data.

[0104] For example, during the electroplating process, the current frequency distribution data is analyzed by the short-time Fourier transform method to determine the dynamic current distribution parameters of the equipment.

[0105] In step S400, the anode and cathode clamping force parameters of the anode and cathode clamping device are obtained, and the contact pressure of the anode and cathode is measured in real time by a pressure sensor to obtain a contact pressure deviation value, wherein the anode and cathode clamping force parameters include initial clamping force parameters and pressure distribution.

[0106] The initial clamping force parameters and pressure distribution of the anode and cathode are measured in real time by the pressure sensor installed on the clamping device to obtain the deviation value of the contact pressure. Specifically, the sensor continuously monitors the contact pressure and uploads the data to the control system.

[0107] For example, during the electroplating process, high-precision pressure sensors are used to measure the contact pressure between the anode and cathode in real time to ensure the real-time and accuracy of the data.

[0108] The contact pressure deviation value is combined with the current control instruction to generate a pressure control factor. Based on the pressure control factor, the anode and cathode clamping devices are adjusted to generate a preliminary pressure adjustment result.

[0109] By combining the contact pressure deviation value with the previously generated current control instruction, a corresponding pressure control factor is generated, and the anode and cathode clamping device is optimized and adjusted using this factor to obtain a preliminary pressure adjustment result; specifically, the pressure distribution of the clamping device is dynamically adjusted by calculating the pressure control factor.

[0110] For example, during the production process, the pressure control factor is calculated and the pressure setting of the clamping device is adjusted to ensure the uniformity and stability of the contact pressure.

[0111] The preliminary pressure adjustment result is cross-analyzed with the initial clamping force parameter to generate clamping force distribution data, which is then corrected to obtain the anode and cathode clamping force distribution.

[0112] By comparing and analyzing the preliminary pressure adjustment results with the initial clamping force parameters, detailed clamping force distribution data are generated, and these data are corrected to ultimately obtain accurate anode and cathode clamping force distributions; specifically, by analyzing the clamping force distribution data in detail, the pressure distribution of the clamping device is optimized.

[0113] For example, in the electroplating process, by cross-analyzing the initial clamping force and the adjustment results, the precise distribution of the anode and cathode clamping forces can be obtained to improve process stability.

[0114] In step S500, the pressure distribution parameters in the anode-cathode clamping force distribution are obtained, and the dynamic current parameters in the current control instruction are obtained.

[0115] By obtaining the pressure distribution parameters in the anode and cathode clamping force distribution and the dynamic current parameters in the current control instructions, the electroplating tank is optimized and regulated; specifically, detailed pressure and current parameters are obtained through sensors to ensure data accuracy.

[0116] For example, during the electroplating process, the plating tank can be optimized and controlled by obtaining detailed pressure and current data.

[0117] The pressure distribution parameters and dynamic current parameters are input into a preset stability model to obtain a liquid flow stability factor, and the liquid flow stability factor is used to adjust the injection rate and discharge rate of the electroplating tank to obtain the liquid level adjustment result parameters.

[0118] By inputting the obtained pressure distribution parameters and dynamic current parameters into the preset fluid stability model, the liquid flow stability factor is calculated, and the filling rate and discharge rate of the electroplating tank are accurately adjusted according to the factor to obtain the liquid level height adjustment result parameters; specifically, the height stability of the liquid level is ensured through model calculation and actual regulation.

[0119] For example, during the electroplating process, the fluid stability model is used to adjust the injection and discharge rates to ensure the height of the liquid level and flow stability.

[0120] In this embodiment, the electrode spacing between the anode and the cathode is measured by using a position sensor, and the electrode spacing and current parameters are processed using the differential method and Fourier transform to generate an electric field distribution influencing factor and a current dynamic response factor, thereby further optimizing the electric field distribution and current density.

[0121] The electrode spacing is monitored in real time by the position sensor, and the electrode spacing change rate is calculated by the differential method. The current parameters of the equipment are obtained by combining the current sensor, and the current stability coefficient is calculated by Fourier transform. The electrode spacing change rate and the current stability coefficient are correlated and analyzed to generate the electric field distribution influencing factor and the current dynamic response factor, optimize the electrode spacing and current distribution, and obtain the electric field uniformity optimization factor and current density correction factor. The electric field uniformity is dynamically adjusted and optimized through the electric field sensor and optimization factor to ensure the uniformity of the electric field strength and distribution.

[0122] The current correction matrix is ​​solved by the Pearson correlation coefficient and singular value decomposition method to generate current control instructions, optimize current intensity and direction, and ensure current uniformity. The initial clamping force and pressure distribution of the anode and cathode are measured by pressure sensors, and the anode and cathode clamping devices are dynamically adjusted in combination with current control instructions to ensure uniform pressure distribution.

[0123] By acquiring detailed pressure and current data, inputting the fluid stability model, optimizing the liquid flow, and obtaining the liquid level adjustment result parameters, the uniformity of the electric field and current of the semiconductor equipment is improved, ensuring the stable operation of the equipment under complex working conditions, and improving production efficiency and product quality.

[0124] Embodiment 3:

[0125] like Figure 2 As shown, the present application also provides an optimization system for a semiconductor equipment control system, including an acquisition unit, a first optimization unit, a generation unit, an adjustment unit, a second optimization unit and a control unit.

[0126] The acquisition unit is mainly used to acquire electrode spacing parameters and device current parameters, perform dynamic analysis and correlation analysis on the electrode spacing parameters and device current parameters, and obtain the electric field uniformity optimization factor and current density correction factor.

[0127] The first optimization unit is mainly used to optimize the electric field uniformity in the semiconductor device by using the electric field uniformity optimization factor to obtain the electric field distribution.

[0128] The generation unit is mainly used to perform uniformity correction on the current density in the electroplating process based on the electric field distribution and the current density correction factor, and to generate current control instructions.

[0129] The adjustment unit is mainly used to obtain the anode and cathode clamping force parameters, and dynamically adjust the anode and cathode clamping force parameters using current control instructions to obtain the anode and cathode clamping force distribution.

[0130] The second optimization unit is mainly used to optimize the fluid dynamics of the electroplating tank by utilizing the anode and cathode clamping force distribution and the current control instructions to obtain the liquid level adjustment result parameters.

[0131] The control unit is mainly used to input the liquid level adjustment result parameters into the control system of the semiconductor device to control the stirring speed and direction of the electroplating solution.

[0132] In this embodiment, by introducing an acquisition unit, a first optimization unit, a generation unit, an adjustment unit, a second optimization unit and a control unit, a comprehensive optimization of the electroplating process of the semiconductor device is achieved. The acquisition unit acquires the electrode spacing parameters and the device current parameters through the position sensor and the current sensor, and generates the electric field uniformity optimization factor and the current density correction factor by dynamic analysis and correlation analysis. The first optimization unit dynamically adjusts the electrode spacing and optimizes the electric field distribution according to the electric field uniformity optimization factor. The generation unit performs uniformity correction on the current density during the electroplating process based on the optimized electric field distribution and the current density correction factor, and generates an accurate current control instruction. The adjustment unit acquires the anode and cathode clamping force parameters, and dynamically adjusts the anode and cathode clamping force parameters using the current control instruction to ensure the uniformity of the anode and cathode clamping force distribution. The second optimization unit uses the anode and cathode clamping force distribution and the current control instruction to perform fluid dynamic optimization on the electroplating tank to ensure the height stability of the liquid level, and generates the liquid level height adjustment result parameter. Finally, the control unit adjusts the stirring speed and direction of the semiconductor device electroplating solution based on the liquid level height adjustment result parameter to ensure the uniformity and stability of the electroplating solution. Through the coordinated work of these optimization units, the system can significantly improve the accuracy and efficiency of the electroplating process, ensure the stable operation of the equipment under complex working conditions, and thus improve product quality and production efficiency.

[0133] It should be noted that technicians in the relevant technical field can clearly understand that for the convenience and conciseness of description, the specific working process of the system and each unit described above can refer to the corresponding process in the aforementioned semiconductor equipment control system optimization method embodiment, and will not be repeated here.

[0134] As described above, the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features thereof may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for optimizing a semiconductor device control system, characterized in that: include: Obtaining electrode spacing parameters and device current parameters, performing dynamic analysis and correlation analysis on the electrode spacing parameters and the device current parameters, and obtaining an electric field uniformity optimization factor and a current density correction factor; Optimizing the electric field uniformity in the semiconductor device using the electric field uniformity optimization factor to obtain an electric field distribution; Based on the electric field distribution and the current density correction factor, a uniformity correction is performed on the current density during the electroplating process to generate a current control instruction; Acquire the anode and cathode clamping force parameters, dynamically adjust the anode and cathode clamping force parameters using the current control instruction, and obtain the anode and cathode clamping force distribution; Utilizing the anode and cathode clamping force distribution and the current control instruction to perform fluid dynamic optimization on the electroplating tank, and obtaining liquid level adjustment result parameters; The liquid level adjustment result parameters are input into the control system of the semiconductor equipment to control the stirring speed and direction of the electroplating solution.

2. The method for optimizing a semiconductor device control system according to claim 1, wherein: The step of obtaining the electrode spacing parameter and the device current parameter, performing dynamic analysis and correlation analysis on the electrode spacing parameter and the device current parameter, and obtaining the electric field uniformity optimization factor and the current density correction factor includes: Using a position sensor to measure the electrode spacing between the anode and the cathode to obtain an electrode spacing parameter, and based on the electrode spacing parameter, driving an electrode adjustment device to adjust the relative position of the electrodes; The electrode spacing parameters are calculated using a differential method to obtain a rate of change of the electrode spacing; The current sensor is used to continuously monitor the fluctuation amplitude, instantaneous current and average current of the semiconductor device current to obtain the device current parameters; Applying Fourier transform to transform the current parameters of the device to obtain a current stability coefficient; Perform correlation analysis on the electrode spacing change rate and the current stability coefficient to generate an electric field distribution influencing factor and a current dynamic response factor; The electric field distribution influencing factor is used to optimize the electrode spacing distribution to obtain the electric field uniformity optimization factor, and the current dynamic response factor is used to adjust the device output current to obtain the current density correction factor.

3. The method for optimizing a semiconductor device control system according to claim 1, characterized in that: The step of optimizing the electric field uniformity in the semiconductor device by using the electric field uniformity optimization factor to obtain the electric field distribution includes: Obtaining the relative position parameters of the electrodes in the electric field uniformity optimization factor, measuring the electric field strength and distribution through an electric field sensor, and obtaining initial electric field distribution data; Calculating an electric field deviation value based on the relative position parameters of the electrodes and the initial distribution data of the electric field, and applying an integral method to cumulatively analyze the electric field deviation value to generate an electric field uniformity deviation trend; According to the electric field uniformity deviation trend, the electrode adjustment device is driven again to adjust the relative position of the electrodes, and the adjusted electric field strength is detected; The adjusted electric field strength is monitored through a feedback circuit to obtain corrected electric field distribution data, and the corrected electric field distribution data is merged with the electric field uniformity optimization factor to obtain an optimized electric field distribution.

4. The method for optimizing a semiconductor device control system according to claim 1, wherein: The step of performing uniformity correction on the current density during the electroplating process based on the electric field distribution and the current density correction factor to generate a current control instruction comprises: Acquire the electric field strength uniformity parameter in the electric field distribution, and acquire the dynamic current distribution parameter in the current density correction factor; Cross-analyzing the electric field intensity uniformity parameter and the dynamic current distribution parameter by Pearson correlation coefficient calculation method to generate a current correction matrix; Applying singular value decomposition method to solve the current correction matrix to obtain current intensity adjustment factor and current direction optimization factor; The instantaneous amplitude of the output current of the device is optimized by using the current intensity adjustment factor to obtain the current intensity distribution, and the distribution direction of the current path of the device is corrected by using the current direction optimization factor to obtain the current direction distribution; A current control instruction is generated based on the current intensity distribution and the current direction distribution.

5. The method for optimizing a semiconductor device control system according to claim 4, characterized in that: The step of obtaining the electric field strength uniformity parameter in the electric field distribution and the step of obtaining the dynamic current distribution parameter in the current density correction factor comprises: Meshing the electric field distribution by meshing to obtain a plurality of independent mesh units; Applying the regional weighted method to calculate the average value of the electric field intensity in each of the independent grid units to obtain grid electric field distribution data; Calculating a maximum deviation value of the electric field strength between grids based on the grid electric field distribution data, and calculating an electric field strength uniformity parameter based on the maximum deviation value and the average value of the electric field strength using a weighted difference method; The instantaneous current and average current of the device are processed in sections according to the current density correction factor to obtain current frequency distribution data, and the current frequency distribution data is analyzed in the frequency domain by a short-time Fourier transform method to obtain dynamic current distribution parameters.

6. The method for optimizing a semiconductor device control system according to claim 1, wherein: The step of obtaining the anode and cathode clamping force parameters, dynamically adjusting the anode and cathode clamping force parameters using the current control instruction, and obtaining the anode and cathode clamping force distribution includes: Obtaining the cathode and anode clamping force parameters of the cathode and anode clamping device, measuring the contact pressure of the cathode and anode in real time through a pressure sensor, and obtaining a contact pressure deviation value, wherein the cathode and anode clamping force parameters include initial clamping force parameters and pressure distribution; The contact pressure deviation value is combined with the current control instruction to generate a pressure control factor, and based on the pressure control factor, the anode and cathode clamping device is adjusted to generate a preliminary pressure adjustment result; The preliminary pressure adjustment result is cross-analyzed with the initial clamping force parameter to generate clamping force distribution data, which is then corrected to obtain the anode and cathode clamping force distribution.

7. The method for optimizing a semiconductor device control system according to claim 1, characterized in that: The step of optimizing the fluid dynamics of the electroplating tank by using the anode and cathode clamping force distribution and the current control instruction to obtain the liquid level adjustment result parameters includes: Obtaining the pressure distribution parameters in the anode-cathode clamping force distribution, and obtaining the dynamic current parameters in the current control instruction; The pressure distribution parameters and the dynamic current parameters are input into a preset stability model to obtain a liquid flow stability factor, and the liquid flow stability factor is used to adjust the filling rate and the discharge rate of the electroplating tank to obtain a liquid level adjustment result parameter.

8. An optimization system for a semiconductor device control system, characterized in that: include: An acquisition unit is used to acquire electrode spacing parameters and device current parameters, and to perform dynamic analysis and correlation analysis on the electrode spacing parameters and the device current parameters to obtain an electric field uniformity optimization factor and a current density correction factor; A first optimization unit, configured to optimize the electric field uniformity in the semiconductor device using the electric field uniformity optimization factor to obtain an electric field distribution; A generating unit, configured to perform uniformity correction on the current density during the electroplating process based on the electric field distribution and the current density correction factor, and generate a current control instruction; An adjustment unit, used to obtain the anode and cathode clamping force parameters, and dynamically adjust the anode and cathode clamping force parameters using the current control instruction to obtain the anode and cathode clamping force distribution; A second optimization unit is used to optimize the fluid dynamics of the electroplating tank by using the anode and cathode clamping force distribution and the current control instruction to obtain a liquid level adjustment result parameter; The control unit is used to input the liquid level adjustment result parameters into the control system of the semiconductor device to control the stirring speed and direction of the electroplating solution.

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